WO2023287155A1 - Dôme supérieur pour appareil de traitement de substrat, et appareil de traitement de substrat - Google Patents

Dôme supérieur pour appareil de traitement de substrat, et appareil de traitement de substrat Download PDF

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Publication number
WO2023287155A1
WO2023287155A1 PCT/KR2022/010106 KR2022010106W WO2023287155A1 WO 2023287155 A1 WO2023287155 A1 WO 2023287155A1 KR 2022010106 W KR2022010106 W KR 2022010106W WO 2023287155 A1 WO2023287155 A1 WO 2023287155A1
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WO
WIPO (PCT)
Prior art keywords
center
processing apparatus
upper dome
substrate processing
substrate
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PCT/KR2022/010106
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English (en)
Korean (ko)
Inventor
우람
김기범
김도형
김재홍
안민
Original Assignee
주성엔지니어링(주)
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Publication date
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Publication of WO2023287155A1 publication Critical patent/WO2023287155A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Definitions

  • the present invention relates to a substrate processing apparatus that performs a processing process such as a deposition process and an etching process for a substrate.
  • a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate.
  • the substrate process such as a deposition process of depositing a thin film of a specific material on a substrate, a photo process of selectively exposing a thin film using a photosensitive material, and an etching process of forming a pattern by selectively removing the thin film of an exposed portion, etc. processing takes place.
  • a processing process for such a substrate is performed by a substrate processing apparatus.
  • a substrate processing apparatus includes a chamber, a substrate support for supporting a substrate inside the chamber, and an upper dome covering an upper portion of the chamber.
  • the upper dome is formed with a uniform thickness as a whole. Accordingly, in the substrate processing apparatus according to the prior art, in the process of changing the inside of the chamber to a vacuum state to perform a substrate processing process, the upper dome is damaged as the external force pulling the center portion of the upper dome is concentrated. There is a problem with a high risk of breakage.
  • the present invention has been made to solve the above-described problems, and is for a substrate processing apparatus that can reduce the risk of damage or damage to the upper dome in the process of changing the inside of the chamber to a vacuum state to perform a substrate processing process. It is to provide an upper dome and a substrate processing apparatus.
  • the present invention may include the following configuration.
  • a substrate processing apparatus includes a chamber in which a processing process for a substrate is performed; a substrate support for supporting at least one substrate inside the chamber; an upper dome covering an upper portion of the chamber; and a lower dome coupled to a lower portion of the chamber.
  • the edge portion of the upper dome may be formed to have a thicker thickness than the center portion of the upper dome.
  • the upper dome may include an internal diameter and an external diameter.
  • a center of curvature of the inner diameter and a center of curvature of the outer diameter may be spaced apart from each other.
  • the center of curvature of the inner diameter may be disposed closer to the center than the center of curvature of the outer diameter.
  • the upper dome may be formed to increase in thickness as it extends from the center portion toward the edge portion.
  • the center portion may include an inner surface facing the substrate supporter and an outer surface disposed opposite to the inner surface.
  • a flat surface may be formed on at least one of the inner surface and the outer surface.
  • the upper dome may include a transparent part and an opaque part disposed outside the transparent part.
  • the center portion may be included in the transparent portion.
  • the edge portion may be included in the opaque portion.
  • the transparent portion may be formed to increase in thickness as it extends from the center portion toward the opaque portion.
  • the opaque part may be formed to increase in thickness as it extends from one side connected to the transparent part to the other side.
  • the opaque part may be formed to have a uniform thickness while extending from one side connected to the transparent part to the other side.
  • a substrate processing apparatus may include a flange coupled to the upper dome.
  • the flange may be coupled to the upper dome on one side and coupled to the chamber on the other side.
  • An upper dome for a substrate processing apparatus covers an upper portion of a chamber in which a processing process for a substrate is performed.
  • An upper dome for a substrate processing apparatus includes a center portion disposed above the substrate support portion located inside the chamber; and an edge portion disposed outside the center portion. The edge portion may be formed to have a greater thickness than the center portion.
  • the center portion may include an internal diameter and an external diameter.
  • the center of curvature of the inner diameter may be disposed closer to the center than the center of curvature of the outer diameter.
  • the upper dome for a substrate processing apparatus may be formed to increase in thickness as it extends from the center portion toward the edge portion.
  • a flat surface may be formed on at least one of an inner surface of the center portion and an outer surface of the center portion.
  • the center portion is included in the transparent portion
  • the edge portion is included in the opaque portion disposed outside the transparent portion
  • the transparent portion extends from the center portion toward the opaque portion It can be formed so that the thickness increases as much as possible.
  • the center portion of the upper dome may be formed to have a smaller thickness than the edge portion of the upper dome. Accordingly, in the present invention, the center portion may be elastically deformed by a pulling external force acting on the center portion in the process of changing the inside of the chamber to a vacuum state to perform a processing process on the substrate. Therefore, since the present invention can distribute the pulling force applied to the center portion to the edge portion, the risk of damage or breakage of the center portion can be reduced.
  • the edge portion of the present invention is formed to be thicker than the center portion, the edge portion can firmly support the center portion even when an external pulling force acting on the center portion is transmitted toward the edge portion.
  • the edge portion is formed to be thicker than the center portion, the amount of heat inside the chamber that is discharged to the outside through the edge portion can be reduced. Accordingly, since the present invention can reduce heat loss from the periphery of the edge portion of the substrate, the temperature deviation between the edge portion of the substrate and the center portion of the substrate can be reduced. Therefore, the present invention can improve the uniformity of the processing process for the substrate.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to the present invention
  • Figure 2 is a schematic plan view of the upper dome in the substrate processing apparatus according to the present invention
  • 3 and 4 are conceptual cross-sectional views of the upper dome based on the line II of FIG. 2
  • 5 and 6 are schematic cross-sectional views of the center portion of the upper dome based on line II of FIG. 2
  • Figure 7 is a schematic cross-sectional view of the upper dome based on the line II of Figure 2
  • FIG. 1 is a cross-sectional view taken along line II of FIG. 2 as a reference.
  • a substrate processing apparatus 1 performs a processing process on a substrate 100 .
  • the substrate 100 may be a silicon substrate, a glass substrate, a metal substrate, or the like.
  • the substrate processing apparatus 1 according to the present invention may perform a deposition process of depositing a thin film on the substrate 100 and an etching process of removing a part of the thin film deposited on the substrate 100 .
  • the substrate processing apparatus 1 according to the present invention may perform a deposition process using an epitaxial growth method.
  • the substrate processing apparatus 1 according to the present invention will be described based on an embodiment in which the deposition process is performed, but from this, the substrate processing apparatus 1 according to the present invention performs other processing processes such as the etching process. It will be apparent to those skilled in the art belonging to the technical field to which the present invention belongs.
  • a substrate processing apparatus 1 may include a chamber 2, a substrate support 3, a lower dome 4, and an upper dome 5.
  • a processing process for the substrate 100 is performed in the chamber 2 .
  • processing processes such as a deposition process and an etching process may be performed on the substrate 100 .
  • the inside of the chamber 2 may be in a vacuum state.
  • the chamber 2 may provide a processing space 21 .
  • the processing space 21 may be disposed inside the chamber 2 .
  • a gas supply unit 22 supplying gas to the processing space 21 may be connected to the chamber 2 .
  • a gas discharge unit 23 for discharging gas from the processing space 21 may be connected to the chamber 2 .
  • gas supply part 22 and the gas discharge part 23 are connected through the side wall of the chamber 2, but is not limited thereto, and the gas supply part 22 and the gas discharge part (23) may be connected through other parts of the chamber (2).
  • Gas that is not used in the treatment process and remains may be discharged from the chamber 2 through the gas discharge unit 23 .
  • the inside of the chamber 2 is changed to a vacuum state to perform the treatment process, the gas present in the chamber 2 is discharged from the chamber 2 through the gas discharge unit 23. It could be.
  • an exhaust unit for changing the inside of the chamber 2 to a vacuum state may be separately connected to the chamber 2 .
  • the substrate support part 3 supports the substrate 100 .
  • the substrate support part 3 may support one substrate 100 or may support a plurality of substrates 100 .
  • a processing process for a plurality of substrates 100 may be performed at one time.
  • the substrate support part 3 may be coupled to the chamber 2 .
  • the substrate support part 3 may be disposed inside the chamber 2 .
  • the lower dome 4 is coupled to the lower portion of the chamber 2 .
  • the lower dome 4 may block the lower side of the processing space 21 .
  • the support 31 supporting the substrate support 3 may be disposed inside the lower dome 4 .
  • the lower dome 4 may be formed of quartz.
  • a plurality of lower lamps (not shown) emitting heating light may be installed outside the lower dome 4 . Heating light emitted from the lower lamps passes through the lower dome 4 and is transmitted to the processing space 21 , thereby heating the processing space 21 .
  • the upper dome 5 covers the upper part of the chamber 2 .
  • the upper dome 5 may be implemented as an upper dome for a substrate processing apparatus according to the present invention.
  • the upper dome 5 may block the upper side of the processing space 21 .
  • the upper dome 5 may be formed of quartz.
  • a plurality of upper lamps (not shown) emitting heating light may be installed outside the upper dome 5 . Heating light emitted from the upper dome 5 passes through the upper dome 5 and is transmitted to the processing space 21 , thereby heating the processing space 21 .
  • the upper dome 5 may be formed in a dome shape with an open lower side as a whole.
  • the upper dome 5 may include an edge portion 51 and a center portion 52 .
  • the edge portion 51 is disposed outside the center portion 52 .
  • the edge portion 51 may be disposed to surround the outside of the center portion 52 .
  • the edge portion 51 may be supported by the chamber 2 . Accordingly, the edge portion 51 may support the center portion 52 by using the supporting force supported by the chamber 2 .
  • the center portion 52 is disposed above the substrate support portion 3 .
  • the center portion 52 may be disposed inside the edge portion 51 .
  • the center portion 52 may be a portion that falls within a predetermined diameter based on the center CP of the upper dome 5 .
  • the diameter of the center portion 52 may be determined as a length corresponding to a preset ratio to the entire diameter of the upper dome 5 based on the center CP.
  • the center portion 52 and the edge portion 51 may be integrally formed.
  • the center portion 52 may be formed to have a thinner thickness than the edge portion 51 . Accordingly, the edge portion 51 may be formed to have a thicker thickness than the center portion 52 . Therefore, the substrate processing apparatus 1 according to the present invention can achieve the following operational effects.
  • the center portion 52 is formed to be thinner than the edge portion 51, the inside of the chamber 2 is vacuumed to perform the processing process.
  • the center portion 52 may be elastically deformed toward the substrate support portion 3 . Accordingly, the substrate processing apparatus 1 according to the present invention can reduce the risk of damage or damage to the center portion 52 due to an external pulling force acting on the center portion 52 . Meanwhile, when gas discharge from the processing space 21 is finished, the center portion 52 may be restored to its original shape.
  • the center portion 52 in the process of changing the inside of the chamber 2 to a vacuum state to perform the processing process, the center portion 52 is bent toward the substrate support portion 3. Since it is sexually deformed, the pulling force acting on the center portion 52 can be distributed toward the edge portion 51 as shown by the dotted line arrow in FIG. 3 . Accordingly, in the substrate processing apparatus 1 according to the present invention, the risk of damage or damage to the center portion 52 can be further reduced.
  • the edge portion 51 is formed to be thicker than the center portion 52
  • a pulling external force applied to the center portion 52 is applied to the edge portion 51 )
  • the edge portion 51 is implemented to firmly support the center portion 52. Therefore, in the substrate processing apparatus 1 according to the present invention, since the edge portion 51 is formed to have a thicker thickness than the center portion 52, the overall rigidity of the upper dome 5 can be increased.
  • the edge portion 51 is formed to a thicker thickness than the center portion 52, the heat of the processing space 21 is applied to the edge portion 51 ) to reduce the amount emitted to the outside. Accordingly, since the substrate processing apparatus 1 according to the present invention can reduce heat loss from the periphery of the edge portion of the substrate 100 supported by the substrate support portion 3, the edge portion of the substrate 100 A lower temperature than the center portion of the substrate 100 may be compensated for. Therefore, since the substrate processing apparatus 1 according to the present invention can reduce the temperature deviation between the edge portion of the substrate 100 and the center portion of the substrate 100, the uniformity of the processing process for the substrate 100 can be improved. can improve
  • the substrate processing apparatus 1 according to the present invention since the center portion 52 is formed to have a thinner thickness than the edge portion 51, the upper dome 5 is reduced by the thickness of the center portion 52. It is possible to reduce the overall height of Accordingly, the substrate processing apparatus 1 according to the present invention can improve ease of installation in a workshop through a reduction in overall height.
  • the center portion 52 may include an internal diameter (ID) and an external diameter (ED).
  • the inner diameter ID of the center part 52 may correspond to the diameter of the inner surface 521 of the center part 52 .
  • the inner surface 521 of the center portion 52 is a surface facing the substrate support portion 3 .
  • the inner diameter ID of the center portion 52 may be a diameter centered on the center of curvature IDM.
  • the inner diameter ID of the center portion 52 and the inner diameter of the entire upper dome 5 may be implemented identically to each other.
  • the outer diameter ED of the center part 52 may correspond to the diameter of the outer surface 522 of the center part 52 .
  • the outer surface 522 of the center portion 52 is a surface disposed opposite to the inner surface 521 of the center portion 52 .
  • the outer diameter ED of the center portion 52 may be a diameter centered on the center of curvature EDM.
  • the outer diameter ED of the center portion 52 and the outer diameter of the entire upper dome 5 may be identical to each other.
  • the center of curvature IDM of the inner diameter ID and the center of curvature EDM of the outer diameter ED may be spaced apart from each other. Accordingly, in the upper dome 5, the thickness of the edge portion 51 and the thickness of the center portion 52 may be different from each other by using the positional difference between the centers of curvature IDM and EDM.
  • the center of curvature IDM of the inner diameter ID may be disposed closer to the center portion 52 than the center of curvature EDM of the outer diameter ED.
  • the shortest distance between the center of curvature IDM of the inner diameter ID and the inner surface 521 of the center portion 52 is the distance between the center of curvature EDM of the outer diameter ED and the center portion 52 of the center portion 52.
  • the edge portion 51 of the upper dome 5 may be formed to have a thicker thickness than the center portion 52 .
  • the substrate processing apparatus 1 since the center of curvature (IDM) of the inner diameter (ID) is disposed closer to the center portion 52 than the center of curvature (EDM) of the outer diameter (ED), the substrate processing apparatus 1 according to the present invention The following effects can be achieved.
  • the diameter of the chamber 2 The height 5H' of the upper dome 5 is determined according to the intersection point IP' of the inner diameter ID' corresponding to (2D).
  • the intersecting point IP of the inner diameter ID corresponding to the diameter 2D of the chamber 2 may be disposed closer to the center portion 52 compared to the comparative example. That is, with reference to FIG. 4 , the intersection point IP of the inner diameter ID' in the embodiment is moved higher than the intersection point IP' of the inner diameter ID' in the comparative example. Accordingly, the height 5H of the upper dome 5 in the embodiment may be lower than the height 5H' of the upper dome 5 in the comparative example. In addition, the inner volume of the upper dome 5 in the embodiment may be implemented smaller than the inner volume of the upper dome 5 in the comparative example.
  • the center of curvature IDM of the inner diameter ID is disposed closer to the center portion 52 than the center of curvature EDM of the outer diameter ED. , Not only can the height 5H of the upper dome 5 be lowered, but also the inner volume of the upper dome 5 can be reduced. In addition, in the substrate processing apparatus 1 according to the present invention, it is possible to improve the ease of processing the upper dome 5 so that the edge portion 51 is formed to be thicker than the center portion 52 .
  • the upper dome 5 may be formed such that its thickness increases as it extends from the center portion 52 toward the edge portion 51 .
  • the inner surface of the upper dome 5 may form a single curved surface
  • the outer surface of the upper dome 5 may form a single curved surface. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the ease of the processing operation of cutting the inner surface of the upper dome 5 and the outer surface of the upper dome 5. .
  • a flat surface 523 may be formed on at least one of an inner surface 521 of the center portion 52 and an outer surface 522 of the center portion 52 .
  • the substrate processing apparatus 1 when the flat surface 523 is formed on the inner surface 521 of the center portion 52 , the volume of the processing space 21 may be reduced due to the flat surface 523 . Accordingly, the substrate processing apparatus 1 according to the present invention can improve the ease of adjusting the temperature of the processing space 21 . In addition, since the thickness of the center portion 52 can be increased as the flat surface 523 is formed, the substrate processing apparatus 1 according to the present invention uses the flat surface 523 to form the center portion 52 can be implemented to have rigidity that can withstand higher vacuum.
  • the plane 523 may be formed only on a part of the inner surface 521 of the center portion 52 . Although not shown, the plane 523 may be formed on the entire inner surface 521 of the center portion 52 .
  • the substrate processing apparatus 1 when the flat surface 523 is formed on the outer surface 522 of the center portion 52, the height of the upper dome 5 can be reduced due to the flat surface 523. Accordingly, the substrate processing apparatus 1 according to the present invention can improve the ease of installation in a workplace through a reduction in the height of the upper dome 5.
  • the substrate processing apparatus 1 according to the present invention can reduce the risk of cracks occurring due to the corner 523a on the inner surface 521 of the center portion 52 facing the processing space 21. there is.
  • the plane 523 may be formed only on a part of the outer surface 522 of the center portion 52 . Although not shown, the plane 523 may be formed on the entire outer surface 522 of the center portion 52 .
  • the upper dome 5 may include a connecting portion 53.
  • the connection part 53 may be disposed between the edge part 51 and the center part 52 .
  • the edge portion 51 and the center portion 52 may be connected to each other through the connection portion 53 .
  • the connection part 53 may be disposed inside the edge part 51
  • the center part 52 may be disposed inside the connection part 53 .
  • a diameter forming the boundary between the edge portion 51 and the connection portion 53 may be determined as a length corresponding to a preset ratio to the entire diameter of the upper dome 5 based on the center CP. .
  • the inner surface of the connection part 53, the inner surface 521 of the center part 52, and the inner surface of the edge part 51 may be formed to form one curved surface.
  • connection part 53, the outer surface 522 of the center part 52, and the outer surface of the edge part 51 may be formed to form one curved surface.
  • the plane 523 may be formed on at least one of the inner surface 521 of the center part 52 and the outer surface 522 of the center part 52 .
  • the connection part 53, the center part 52, and the edge part 51 may be integrally formed.
  • the upper dome 5 may be formed with only the edge portion 51 and the center portion 52 without the connection portion 53 .
  • the upper dome 5 may include a transparent portion 54 and an opaque portion 55.
  • the transparent portion 54 is formed to be transparent.
  • the center portion 52 may be included in the transparent portion 54 .
  • the center part 52 and the connection part 53 may be included in the transparent part 54 .
  • all or part of the connecting portion 53 may be included in the transparent portion 54 .
  • the transparent part 54 may be disposed inside the opaque part 55 .
  • the opaque part 55 may be disposed to surround the outside of the transparent part 54 .
  • the transparent part 54 and the opaque part 55 may be individually manufactured and then combined to realize the upper dome 5 .
  • the transparent part 54 and the opaque part 55 may be integrally formed.
  • the transparent portion 54 may be formed to increase in thickness as it extends from the center portion 52 toward the opaque portion 55 . Accordingly, in the process of changing the inside of the chamber 2 to a vacuum state in order to perform the treatment process, the transparent part 54 is moved to the center part 52 by a pulling external force acting on the center part 52. ) is implemented to reduce the risk of damage or breakage.
  • the opaque portion 55 is formed to be opaque or translucent.
  • the opaque part 55 may include the edge part 51 .
  • the edge part 51 and the connection part 53 may be included in the opaque part 55 .
  • all or part of the connecting portion 53 may be included in the opaque portion 55 .
  • the opaque portion 55 may include only the edge portion 51 .
  • the substrate processing apparatus 1 Since the edge portion 51 is included in the opaque portion 55, in the substrate processing apparatus 1 according to the present invention, heat of the processing space 21 is transmitted to the outside through the edge portion 51. The amount released can be further reduced. Accordingly, since the substrate processing apparatus 1 according to the present invention can further reduce heat loss from the periphery of the edge portion of the substrate 100, the edge portion of the substrate 100 and the center of the substrate 100 The temperature difference between parts can be further reduced. Therefore, the substrate processing apparatus 1 according to the present invention can further improve the uniformity of the processing process for the substrate 100 .
  • the opaque portion 55 may be formed to increase in thickness as it extends from one side connected to the transparent portion 54 to the other side.
  • the inner surface of the transparent part 54 and the inner surface of the opaque part 55 form one curved surface
  • the outer surface of the transparent part 54 and the outer surface of the opaque part 55 form one curved surface.
  • the opaque portion 55 may be formed to have a uniform thickness while extending from one side connected to the transparent portion 54 to the other side.
  • each of the inner and outer surfaces of the transparent portion 54 may be curved, and the inner and outer surfaces of the opaque portion 55 may be formed to be flat.
  • the substrate processing apparatus 1 may include a flange 6 .
  • the flange 6 is coupled to the chamber 2 .
  • the upper dome 5 may be coupled to one side of the flange 6, and the other side of the flange 6 may be coupled to the chamber 2.
  • the upper dome 5 may be supported on the chamber 2 through the flange 6.
  • the flange 6 may be formed to have a thicker thickness than the upper dome 5 . Accordingly, the flange 6 can firmly support the upper dome 5 by using the bearing force supported by the chamber 2 .
  • the flange 6 may be disposed to surround the upper dome 5 . In this case, the upper dome 5 may be disposed inside the flange 6.
  • the flange 6 may be formed of quartz.
  • the flange 6 may be formed opaque or translucent.
  • the edge portion of the lower dome 4 may be formed to have a thicker thickness than the center portion of the lower dome 4 . Accordingly, in the substrate processing apparatus 1 according to the present invention, in the process of changing the inside of the chamber 2 to a vacuum state to perform the processing process, the upper dome 5 as well as the lower dome 4 It can also reduce the risk of damage or breakage.
  • the lower dome 4 may be implemented in substantially the same manner as the above-described upper dome 5, except for being coupled to the lower portion of the chamber 2. Therefore, since it will be obvious to those skilled in the art to derive the lower dome 4 from the description of the upper dome 5, the lower dome implemented substantially coincides with the upper dome 5. A detailed description of (4) is omitted.

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  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

La présente invention concerne un appareil de traitement de substrat comprenant : une chambre dans laquelle un processus de traitement est réalisé sur des substrats; une partie de support de substrat servant de support à au moins un substrat à l'intérieur de la chambre; un dôme supérieur recouvrant la partie supérieure de la chambre; et un dôme inférieur relié à la partie inférieure de la chambre, la partie de bord du dôme supérieur étant plus épaisse que la partie centrale du dôme supérieur.
PCT/KR2022/010106 2021-07-16 2022-07-12 Dôme supérieur pour appareil de traitement de substrat, et appareil de traitement de substrat WO2023287155A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020210093527A KR20230012803A (ko) 2021-07-16 2021-07-16 기판처리장치용 상부돔 및 기판처리장치
KR10-2021-0093527 2021-07-16

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WO2023287155A1 true WO2023287155A1 (fr) 2023-01-19

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Citations (5)

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Publication number Priority date Publication date Assignee Title
KR19980081271A (ko) * 1997-04-11 1998-11-25 조셉제이.스위니 싱글 기판 반응기내의 배기 가스를 가열하기 위한 구멍난하부 라이너
JP2003124206A (ja) * 2001-10-18 2003-04-25 Tokyo Electron Ltd 熱処理装置
US20140199056A1 (en) * 2013-01-16 2014-07-17 Applied Materials, Inc. Quartz upper and lower domes
US20180355510A1 (en) * 2017-06-07 2018-12-13 Samsung Electronics Co., Ltd. Semiconductor process chamber including lower volume upper dome
KR20190050650A (ko) * 2017-11-03 2019-05-13 주식회사 원익아이피에스 기판처리 장치의 반응기

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19980081271A (ko) * 1997-04-11 1998-11-25 조셉제이.스위니 싱글 기판 반응기내의 배기 가스를 가열하기 위한 구멍난하부 라이너
JP2003124206A (ja) * 2001-10-18 2003-04-25 Tokyo Electron Ltd 熱処理装置
US20140199056A1 (en) * 2013-01-16 2014-07-17 Applied Materials, Inc. Quartz upper and lower domes
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