WO2023282357A1 - Light emission device - Google Patents

Light emission device Download PDF

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Publication number
WO2023282357A1
WO2023282357A1 PCT/JP2022/027159 JP2022027159W WO2023282357A1 WO 2023282357 A1 WO2023282357 A1 WO 2023282357A1 JP 2022027159 W JP2022027159 W JP 2022027159W WO 2023282357 A1 WO2023282357 A1 WO 2023282357A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
frame
emitting element
light
substrate
Prior art date
Application number
PCT/JP2022/027159
Other languages
French (fr)
Japanese (ja)
Inventor
清一 渡辺
芳仁 橘田
雄一郎 安藤
克弥 青嶋
稜 松浦
洸己 上野
Original Assignee
シチズン電子株式会社
シチズン時計株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by シチズン電子株式会社, シチズン時計株式会社 filed Critical シチズン電子株式会社
Priority to JP2023520519A priority Critical patent/JP7351041B2/en
Publication of WO2023282357A1 publication Critical patent/WO2023282357A1/en
Priority to JP2023148722A priority patent/JP2023169275A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements

Definitions

  • the present disclosure relates to a light emitting device.
  • a light-emitting device in which a light-emitting element such as an LED (Light Emitting Diode) and electrodes and wiring for supplying power to the light-emitting element are mounted on a substrate and packaged. In such a light-emitting device, it is required to improve the light extraction efficiency from the light-emitting element.
  • a light-emitting element such as an LED (Light Emitting Diode) and electrodes and wiring for supplying power to the light-emitting element are mounted on a substrate and packaged.
  • LED Light Emitting Diode
  • Japanese Patent Application Laid-Open No. 2008-41290 discloses a light-emitting device in which a plurality of frames that reflect light from a light-emitting element are stacked on a substrate so as to surround the light-emitting element. It is described that the emitted light is reflected by the frame and extracted to the outside of the light emitting device.
  • the present disclosure has been made to solve the above-described problems, and the frame body is configured with a plurality of curved surfaces, and the connecting portion between the curved surfaces is substantially the same height as the upper surface of the light emitting element.
  • An object of the present invention is to provide a light-emitting device capable of improving light extraction efficiency by arranging it.
  • a light-emitting device includes a substrate, a light-emitting element arranged on the upper surface of the substrate, a frame arranged on the upper surface of the substrate so as to surround the light-emitting element and reflecting light from the light-emitting element, and a frame. and a sealing material for sealing the light-emitting element, the frame including a phosphor arranged inside and emitting light whose wavelength is converted from the light emitted from the light-emitting element, wherein the frame is on the side of the light-emitting element.
  • a first frame portion having a first inner peripheral curved surface that protrudes outward; and a second frame portion having a second inner peripheral curved surface; It is arranged so as to be the same height as the upper surface of the.
  • the inclination angle of the first inner peripheral curved surface at the connecting portion is smaller than the inclination angle of the second inner peripheral curved surface at the connecting portion.
  • the difference between the height of the connecting portion from the surface of the substrate and the height of the upper surface of the light emitting element from the surface of the substrate is ⁇ the height of the upper surface of the light emitting element from the surface of the substrate. It is preferably 10% or less.
  • the distance from the light-emitting element to the connecting portion is 300 ⁇ m or less.
  • the ratio of the height of the second frame portion to the distance from the light emitting element to the connection portion is 0.2 or more and 1.5 or less.
  • the second frame is formed thicker than the first frame and covers the upper portion and the outer peripheral surface of the first frame.
  • the first frame portion and the second frame portion contain resin and titanium oxide, and the content of titanium oxide in the first frame portion and the second frame portion based on the resin is It is preferably 30 phr or more and 130 phr or less.
  • the light-emitting device further includes a conductive wiring pattern arranged to be surrounded by the frame on the upper surface of the substrate and reflecting light from the light-emitting element, and the light-emitting element is located on the upper surface of the wiring pattern. It is preferable that the frame cover the outer periphery of the wiring pattern.
  • the substrate has a rectangular planar shape, and the first wiring and the second wiring electrically connected to the light emitting element are arranged along the longitudinal direction of the substrate. It is preferable that the width of the frames arranged at both ends in the longitudinal direction is wider than the width of the frames arranged at both ends in the width direction of the substrate, and that the upper surface of the sealing material has a square planar shape. .
  • the separation distance between the tip of the first frame portion arranged in the longitudinal direction of the substrate and the light-emitting element is and the light emitting element.
  • the length obtained by adding the separation distance between the ends of the pair of first frame portions facing each other and the end portion of the substrate is It is preferably longer than the sum of the separation distance between the tip of one frame and the light emitting element.
  • the light-emitting device includes a substrate on which a wiring pattern having a concave portion is arranged, a light-emitting element arranged on the upper surface of the substrate, and arranged on the upper surface of the substrate so as to surround the light-emitting element.
  • the frame has at least a first frame portion having a first inner curved surface protruding toward the light emitting element and a second frame portion having a second inner curved surface, the first frame portion and the second frame portion is arranged so as to be at the same height as the upper surface of the light emitting element, the substrate has a rectangular planar shape, and the first wiring and the second wiring electrically connected to the light emitting element are on the substrate.
  • the width of the frames arranged along the longitudinal direction and arranged at both ends in the longitudinal direction of the substrate is wider than the width of the frames arranged at both ends in the transverse direction of the substrate, and the width of the frames arranged in the longitudinal direction of the substrate A pair of first frame portions are arranged to cover the recess.
  • the light emitting device makes it possible to improve light extraction efficiency.
  • FIG. 1 is a plan view of a light emitting device according to a first embodiment
  • FIG. FIG. 2 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 1
  • FIG. 2 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 1
  • FIG. 3 is a diagram for explaining the relationship between the height of the connection portion shown in FIG. 2 and the height of the upper surface of the light emitting element
  • 3 is a diagram showing the relationship between the height of the connecting portion shown in FIG. 2 and the intensity of light emitted to the outside of the light emitting device shown in FIG. 1
  • FIG. 2 is a diagram for explaining a distance from the light emitting element shown in FIG. 1 to a connecting portion
  • FIG. 2 It is a figure for demonstrating the height of the 2nd frame part shown in FIG. 2. It is a figure which shows the relationship between the height of the 2nd frame part shown in FIG. 2, and the intensity
  • (A) is a diagram showing the chromaticity uniformity of the light emitting device shown in FIG.
  • FIG. 2 is a flowchart showing an example of the flow of a method for manufacturing the light emitting device shown in FIG. 1; 1. It is a schematic diagram for demonstrating each process of the manufacturing method of the light-emitting device shown in FIG.
  • FIG. 2 is a diagram for explaining the content of titanium oxide in the frame shown in FIG. 1; It is a top view of the light-emitting device which concerns on 2nd Embodiment.
  • FIG. 16 is a cross-sectional view of the light emitting device shown in FIG. 15; It is a top view of the light-emitting device which concerns on 3rd Embodiment.
  • FIG. 1 is a flowchart showing an example of the flow of a method for manufacturing the light emitting device shown in FIG. 1; 1. It is a schematic diagram for demonstrating each process of the manufacturing method of the light-emitting device shown in FIG.
  • FIG. 2 is a diagram for explaining the content of titanium oxide in the frame shown in FIG. 1; It is a top view of the
  • FIG. 18 is a cross-sectional view of the light emitting device shown in FIG. 17 (No. 1); FIG. 18 is a cross-sectional view of the light emitting device shown in FIG. 17 (No. 2); It is a sectional view of a light-emitting device concerning a 4th embodiment.
  • FIG. 11 is a plan view of a light emitting device according to a fifth embodiment;
  • FIG. 22 is a cross-sectional view of the light emitting device shown in FIG. 21;
  • FIG. 11 is a plan view of a light emitting device according to a sixth embodiment;
  • FIG. 24 is a cross-sectional view of the light emitting device shown in FIG. 23;
  • FIG. 21 is a plan view (part 1) of the light emitting device according to the seventh embodiment;
  • FIG. 26 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 25;
  • FIG. 21 is a plan view of a light emitting device according to an eighth embodiment;
  • FIG. 28 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 27;
  • FIG. 28 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 27;
  • FIG. 21 is a plan view of a light emitting device according to a ninth embodiment;
  • 31 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 30;
  • FIG. FIG. 31 is a cross-sectional view (part 2) of the light emitting device shown in FIG.
  • FIG. 30 It is a figure for demonstrating preferable arrangement
  • (a) is a diagram (part 1) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, and (b) is the tip of the first frame; and the end of the light emitting element is a diagram (part 2) showing the directivity when changing the separation distance between the tip of the first frame and the end of the light emitting element FIG.
  • 3D is a diagram (part 3) showing the directivity when the separation distance is changed, and (d) shows the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed; is a diagram (part 4), and (e) is a diagram (part 5) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, (f) is a diagram (part 6) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, and (g) is the tip of the first frame;
  • FIG. 11 is a diagram (No. 7) showing the directivity when the separation distance between the edge of the light emitting element is changed.
  • FIG. 1 is a plan view of the light emitting device according to the first embodiment
  • FIGS. 2 and 3 are cross-sectional views of the light emitting device 1.
  • FIG. 2 is a cross-sectional view along line II-II of FIG. 1
  • FIG. 3 is a cross-sectional view along line III-III of FIG. 2 and 3 may be referred to as the upper side of the light emitting device 1, and the lower side may be referred to as the lower side of the light emitting device 1 hereinafter.
  • the light emitting device 1 has a substrate 11, a wiring pattern 12, an electrode 13, a single light emitting element 14, a frame 15 and a sealing material 16.
  • the substrate 11 is formed in a rectangular flat plate shape from an electrically insulating resin such as phenol resin, epoxy resin, polyimide resin or polyester resin.
  • the thickness of the substrate 11 is, for example, 200 ⁇ m.
  • the wiring pattern 12 has flat plate-like first wiring 121 and second wiring 122 provided on the upper surface of the substrate 11 so as to be separated from each other.
  • the first wiring 121 and the second wiring 122 have a rectangular planar shape and are made of silver.
  • the first wiring 121 and the second wiring 122 have an area where bonding wires that can be electrically connected to the light emitting element 14 can be arranged by wire bonding processing.
  • the separation distance between the first wiring 121 and the second wiring 122 has a length equal to or greater than the insulation distance.
  • the first wiring 121 and the second wiring 122 secure an area in which bonding wires can be arranged, and the first wiring 121 and the second wiring 122 are separated by an insulation distance or more.
  • first wiring 121 and the second wiring 122 are arranged side by side along the longitudinal direction of the substrate 11 .
  • the thickness of the first wiring 121 and the second wiring 122 is, for example, 50 ⁇ m.
  • the wiring pattern 12 may be formed of other conductive material that reflects the light from the light emitting element 14, including gold, copper, or aluminum.
  • the electrode 13 has a first electrode 131 and a second electrode 132 provided on the lower surface of the substrate 11 and separated from each other.
  • the first electrode 131 and the second electrode 132 are made of a conductor such as gold or copper.
  • the first electrode 131 is electrically connected to the first wiring 121 through a through-hole (indicated by a broken line in FIG. 1) penetrating vertically through the substrate 11 .
  • the second electrode 132 is electrically connected to the second wiring 122 through a through-hole (indicated by a dashed line in FIG. 1) penetrating vertically through the substrate 11 .
  • the first electrode 131 and the second electrode 132 are connected to an external power source (not shown) and used to supply power to the light emitting element 14 via the wiring pattern 12 .
  • the light emitting element 14 is fixed to the upper surface of the second wiring 122 by die bonding such as silver paste or solder, as shown in FIGS.
  • the light-emitting element 14 is, for example, a blue LED made of an InGaN-based compound semiconductor that emits light with a wavelength of 440-455 nm.
  • a pair of device electrodes are provided on the upper surface 141 of the light emitting device 14 , the first device electrode is connected to the first wiring 121 via the bonding wire 17 , and the second device electrode is connected to the second device electrode via the bonding wire 18 . It is connected to the wiring 122 .
  • the light emitting element 14 has, for example, a substantially rectangular parallelepiped shape with each side of 650 ⁇ m in length and width and 260 ⁇ m in height.
  • the light emitting element 14 emits light when current is supplied between the first wiring 121 and the second wiring 122 from an external power supply.
  • the light-emitting element 14 is not limited to a blue LED, but may be, for example, a violet LED or a near-ultraviolet LED, and its emission wavelength band may be within the range of about 200-440 nm including the ultraviolet region.
  • the frame 15 is arranged in a rectangular shape on the upper surface of the substrate 11 along the outer periphery of the substrate 11 so as to surround the light emitting element 14 and the first wiring 121 and the second wiring 122 .
  • the frame 15 is a white resin formed by dispersing fine particles of titanium oxide (TiO 2 ) in resin such as silicon resin or epoxy resin, and reflects light from the light emitting element 14 .
  • the frame 15 includes a first frame portion 151 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 151 and protruding toward the light emitting element 14 side. and a second frame portion 152 . That is, the frame body 15 has a shape in which the second frame portion 152 is stacked on the first frame portion 151 .
  • a connecting portion 153 between the first frame portion 151 and the second frame portion 152 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 .
  • the height of the connecting portion 153 from the surface of the substrate 11 is ⁇ 10% or less of the height of the upper surface 141 of the light emitting element 14 from the surface of the substrate 11, the height of the connecting portion 153 and the upper surface 141 of the light emitting element 14 are equal. are assumed to be the same.
  • the first inner curved surface and the second inner curved surface each have a cross-sectional shape that is convex upward.
  • the lateral width of the second frame portion 152 is smaller than the lateral width of the first frame portion 151 . That is, the second frame portion 152 is formed thinner than the first frame portion 151 .
  • the light emitting area of the light emitting device 1 (referring to the area of the upper surface of the encapsulant 16) is increased, and the light extraction efficiency of the light emitting device 1 is increased. improves.
  • the sealing material 16 is translucent resin such as epoxy resin or silicon resin.
  • the sealing material 16 seals the light emitting element 14 by filling the region surrounded by the frame 15 to a height at least at which the upper surface 141 of the light emitting element 14 is not exposed.
  • a phosphor that converts the wavelength of light emitted from the light emitting element 14 is mixed in the sealing material 16 .
  • a yellow phosphor such as YAG (Yttrium Aluminum Garnet) is mixed in the sealing material 16 as such a phosphor.
  • the light-emitting device 1 emits white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, and yellow light obtained by the blue light exciting a yellow phosphor. 1 to 3, the sealing material 16 is illustrated as being transparent, and the same applies hereinafter.
  • the sealing material 16 may contain other phosphors.
  • the encapsulant 16 may contain two types of green phosphor and red phosphor.
  • the light-emitting device 1 is a white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, with green light and red light obtained by exciting the green phosphor and the red phosphor with the blue light. emit light.
  • the green phosphor a particulate phosphor material such as (BaSr) 2 SiO 4 :Eu 2+ that absorbs the blue light emitted by the light emitting element 14 and converts the wavelength into green light can be used.
  • a particulate phosphor material such as CaAlSiN 3 :Eu 2+ that absorbs the blue light emitted by the light emitting element 14 and converts the wavelength into red light can be used.
  • the sealing material 16 may be obtained by adding a small amount of green phosphor or a small amount of red phosphor to the above-described yellow phosphor.
  • the light-emitting device 1 is based on white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, and yellow light obtained by exciting a yellow phosphor with the blue light. By mixing the excited green light and red light, it is possible to emit white light with improved color rendering, though not as much as the above combination.
  • the light L1 emitted upward from the light emitting element 14 is transmitted through the sealing material 16 and emitted to the outside of the light emitting device 1 .
  • the light L ⁇ b>2 emitted sideways from the vicinity of the upper surface 141 of the light emitting element 14 reaches the vicinity of the connecting portion 153 of the frame 15 . Since the inclination angle of the inner peripheral surface of the first frame portion 151 is small at the connection portion 153 , the light L2 is reflected upward by the first frame portion 151 and emitted to the outside of the light emitting device 1 .
  • the inclination angle of the inner peripheral surface of the frame 15 at the connecting portion 153 is large, the light emitted to the side from the light emitting element 14 is reflected in the direction of the opposing frame 15 rather than upward, and is reflected toward the opposing frame 15.
  • the light is emitted to the outside of the light emitting device 1 while being repeatedly reflected a plurality of times between 15 . In this case, since the light is greatly attenuated by multiple reflections, the light extraction efficiency of the light emitting device 1 is lowered.
  • the inclination angle of the inner peripheral surface of the first frame portion 151 at the connection portion 153 is formed to be small, so that the light emitted sideways from the light emitting element 14 is reflected once to the light emitting device 1 . Since the light is emitted to the outside, the light extraction efficiency is improved.
  • connection portion 153 is positioned at the same height as the upper surface 141 of the light emitting element 14, so that most of the light emitted sideways from the light emitting element 14 is reflected outside the light emitting device 1 once. , the light extraction efficiency is further improved.
  • FIG. 4 is a diagram for explaining the relationship between the height of the connecting portion 153 and the height of the upper surface 141 of the light emitting element 14.
  • FIG. FIG. 4 is a cross-sectional view in a cross-section similar to that of FIG.
  • the height of the connection portion 153 means the height H1 of the connection portion 153 with respect to the upper surface of the wiring pattern 12, as shown in FIG.
  • the height of the upper surface 141 of the light emitting element 14 means the height H2 of the upper surface 141 of the light emitting element 14 with respect to the upper surface of the wiring pattern 12, as shown in FIG.
  • FIG. 5 is a diagram showing the relationship between the height of the connecting portion 153 and the intensity of light emitted to the outside of the light emitting device 1.
  • the horizontal axis is the height H1 of the connection portion 153 from the upper surface of the wiring pattern 12, and the vertical axis is the intensity ratio R of the light emitted to the outside of the light emitting device 1.
  • FIG. The intensity ratio R is the intensity of light emitted to the outside of the light emitting device 1 when the height H2 of the connection portion 153 is 0 ⁇ m (that is, when the height of the connection portion 153 is equal to the height of the upper surface of the wiring pattern 12). is 100%.
  • the strength ratio R is 102% or more in the range where the height H1 is approximately 110 ⁇ m or more and 410 ⁇ m or less. That is, in the range where the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is 150 ⁇ m or less, the intensity of the light emitted to the outside of the light emitting device 1 is increased by 2% or more. , the light extraction efficiency is improved.
  • the strength ratio R is further improved than in the range where the height H1 is approximately 110 ⁇ m or more and 410 ⁇ m or less. That is, when the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is in the range of ⁇ 10% of the height H1 of the connecting portion 153, the amount of light emitted to the outside of the light emitting device 1 is reduced. The intensity is further increased, and the light extraction efficiency is further improved.
  • FIG. 6 is a diagram for explaining the distance from the light emitting element 14 to the connecting portion 153.
  • FIG. FIG. 6 is a cross-sectional view in a cross-section similar to that of FIG.
  • the distance D from the light emitting element 14 to the connection portion 153 is the horizontal distance between the side surface of the light emitting element 14 facing the frame 15 and the connection portion 153, as shown in FIG.
  • the distance D is preferably 300 ⁇ m or less, more preferably 200 ⁇ m or less.
  • the smaller the distance D from the light emitting element 14 to the connecting portion 153 is, the smaller the amount of attenuation of the light emitted sideways from the light emitting element 14 until it reaches the connecting portion 153 .
  • the intensity of the emitted light is increased, and the light extraction efficiency is further improved.
  • the light emitting element 14 is arranged in the center of the frame 15 in the examples shown in FIGS. 1 to 3, the present invention is not limited to such an example.
  • the light emitting element 14 is placed at an arbitrary position inside the frame 15 so that the distance D between at least one of the four side surfaces of the light emitting element 14 and the frame 15 facing the side is 300 ⁇ m or less. may be placed.
  • the distance D from the light emitting element 14 to the connection portion 153 is set to 300 ⁇ m or less, the area filled with the sealing material 16 is reduced, so the required amount of the resin and phosphor is reduced, and the manufacturing cost is reduced. can be suppressed.
  • FIG. 7 is a diagram for explaining the height of the second frame portion 152.
  • FIG. FIG. 7 is a cross-sectional view in a cross-section similar to that of FIG.
  • the height of the second frame portion 152 refers to the height H3 of the top portion of the second frame portion 152 with respect to the height of the connection portion 153 .
  • FIG. 8 is a diagram showing the relationship between the height of the second frame portion 152 and the intensity of light emitted to the outside of the light emitting device 1.
  • the horizontal axis represents the ratio H3/D of the height of the second frame portion 153 to the distance D from the light emitting element 14 to the connection portion 153
  • the vertical axis represents the light emitted to the outside of the light emitting device 1.
  • the intensity ratio R is the ratio of the intensity of light when the highest intensity of light among the data obtained by the above method is set to 100%.
  • the strength ratio R is maximized when H3/D is 0.8, and the strength ratio R decreases as H3/D increases. Moreover, when H3/D is larger than 1.5, the intensity ratio R is below 95%. Therefore, by setting H3/D to 1.5 or less, the light extraction efficiency is improved. Also, when the height H3 of the second frame portion 153 is small, the upper surface of the light emitting element and the upper surface of the encapsulant 16 are close to each other. However, the phosphor of the sealing material 16 may not be sufficiently excited, and white light may not be obtained. Therefore, it is preferable to set H3/D to 0.2 or more.
  • FIG. 9 is a diagram for explaining the relationship between the first inner peripheral curved surface and the second inner peripheral curved surface in the connecting portion 153.
  • the inclination angle ⁇ 1 shown in FIG. 9 is the inclination angle of the first inner peripheral curved surface of the connecting portion 153, that is, the angle formed between the substrate 11 and the tangential plane in contact with the inner peripheral curved surface of the first frame portion 151 at the connecting portion 153.
  • the inclination angle ⁇ 2 is the inclination angle of the second inner peripheral curved surface of the connecting portion 153 , that is, the angle formed between the substrate 11 and the tangential plane in contact with the inner peripheral curved surface of the second frame portion 152 in the connecting portion 153 .
  • the tilt angle ⁇ 1 is smaller than the tilt angle ⁇ 2.
  • the lower side of the connecting portion 153 has a gentler slope than the upper side of the connecting portion 153 .
  • FIG. 10 is a diagram for explaining the relationship between the first inner peripheral curved surface and the second inner peripheral curved surface.
  • the inclination angle ⁇ shown in FIG. 10 is the inclination angle of the tangential plane contacting the inner peripheral curved surface of the first frame portion 151 and the inner peripheral curved surface of the second frame portion 152, that is, the inner peripheral curved surface of the first frame portion 151 and the contact point. This is the angle formed by the substrate 11 and a plane that is in contact with the inner peripheral curved surface of the second frame portion 152 at P1 and in contact with the contact point P2.
  • the inclination angle ⁇ of the tangential plane that contacts the inner peripheral curved surface of the first frame portion 151 and the inner peripheral curved surface of the second frame portion 152 is preferably 40 degrees or more and 50 degrees or less, more preferably 45 degrees. preferable.
  • FIG. 11(A) is a diagram showing the chromaticity uniformity in the light emitting device 1
  • FIG. 11(B) is a diagram showing the chromaticity uniformity in the comparative example.
  • the inner peripheral surface of the frame 15 is a vertical surface instead of the inner peripheral curved surface protruding toward the light emitting element 14 side.
  • the horizontal axis represents the angle of the light emission direction with respect to the vertical direction in a short cross section (for example, a cross section along line III-III in FIG. 1).
  • the vertical axis indicates the chromaticity difference from the light emitted vertically upward.
  • Chromaticity difference is the difference in chromaticity x in the CIE XYZ color space.
  • FIG. 11(B) the chromaticity difference increases as the emission angle increases. That is, FIG. 11B shows that yellow rings are generated in the comparative example.
  • FIG. 11A the chromaticity is almost uniform in the range of the emission angle from -40 degrees to +40 degrees, and even at -80 degrees or +80 degrees, the chromaticity difference is less than that of the comparative example. less than one-fifth. That is, FIG. 11A shows that the yellow ring is suppressed in the light emitting device 1 and light without color unevenness is emitted.
  • the light emitted obliquely from the light emitting element 14 has a longer optical path length inside the encapsulant 16 than the light emitted vertically upward. Therefore, the light emitted in an oblique direction excites more phosphors before being emitted from the sealing material 16, and becomes yellowish than the light emitted vertically upward, resulting in yellow rings. .
  • part of the light emitted obliquely from the light emitting element 14 is reflected upward by the inner peripheral curved surface of the frame 15 . Therefore, the emission direction of the yellowish light is made uniform as a whole, so that the yellow ring is suppressed.
  • FIG. 12 is a flow chart showing an example of the flow of the method for manufacturing the light emitting device 1
  • FIG. 13 is a schematic diagram for explaining each step of the method for manufacturing the light emitting device 1.
  • FIG. A manufacturing method for manufacturing one light-emitting device 1 will be described below, but a plurality of light-emitting devices 1 may be manufactured simultaneously by the manufacturing method described below.
  • the substrate 11 on which the wiring pattern 12 and the electrodes 13 are arranged in advance is prepared (step S101).
  • the wiring pattern 12 and the electrodes 13 are arranged at predetermined positions on the upper and lower surfaces of the substrate 11 by, for example, electroless silver plating, and are electrically connected to each other.
  • the light-emitting element 14 is arranged on the upper surface of the second wiring 122 (step S102). Further, in the light-emitting element placement step, the bonding wires 17 are arranged to connect the first element electrodes of the light-emitting elements 14 and the first wirings 121, and the bonding wires 18 are arranged to connect the second element electrodes of the light-emitting elements 14 and the second element electrodes. 2 wirings 122 are arranged to be connected to each other.
  • the frame 15 is arranged on the upper surface of the substrate 11 so as to surround the wiring patterns 12 and the light emitting elements 14 (step S103).
  • white resin droplets containing titanium oxide are prepared by dispersing fine particles of titanium oxide in droplets of thermosetting resin such as silicon resin.
  • thermosetting resin such as silicon resin.
  • white resin droplets are applied to the upper surface of the substrate 11 so as to surround the wiring pattern 12, and the applied resin droplets are heated and cured to form the first frame portion 151.
  • the inner peripheral surface of the first frame portion 151 becomes a curved surface due to the surface tension of the resin droplets.
  • FIG. 14 is a diagram for explaining the content of titanium oxide in the frame 15.
  • the horizontal axis represents the content m of titanium oxide based on the resin in the frame 15 as the mass of titanium oxide with respect to the mass of the resin 100
  • the vertical axis represents the mass of the frame 15. is the reflectance S of .
  • the solid line represents the data for the frame 15 with a thickness of 40 ⁇ m
  • the dashed line represents the data for the frame 15 having a thickness of 60 ⁇ m
  • the one-dot chain line represents the data for the frame 15 having a thickness of 100 ⁇ m. ing.
  • the reflectance S of the frame 15 is less than 10% when the content m of titanium oxide is 0 phr (that is, the resin alone).
  • the reflectance S is approximately 80% or more.
  • the increase in reflectance S is less than 10% when the content of titanium oxide is increased from 30 phr to 130 phr.
  • the content m of titanium oxide in the frame 15 based on the resin is preferably 30 phr or more and 130 phr or less.
  • the width-to-height ratio of each frame portion is the same as that of the resin liquid. Determined by droplet viscosity. Therefore, the inclination angle ⁇ shown in FIG. 10 is also generally determined by the viscosity of the resin droplet.
  • the viscosity of the resin droplets changes according to the content of titanium oxide. When silicon resin is used as the resin and the content of titanium oxide is 60 phr, the ratio of the width to the height of the frame 15 is approximately 2:1, and the angle of inclination ⁇ is 40 degrees or more and 50 degrees or less. preferable.
  • step S104 in the sealing material filling step, as shown in FIG. It is filled (step S104).
  • the light emitting device 1 is manufactured by cutting the frame 15 and the substrate 11 into rectangular shapes along the frame 15 (step S105). .
  • the upper surface of the second frame portion 152 is formed flat, even if the cutting position is displaced, the height of the frame body 15 after cutting is not affected by this deviation, and light emission of uniform quality can be obtained.
  • a device 1 is manufactured.
  • the light-emitting device 1 includes the light-emitting element 14 arranged on the upper surface of the substrate 11, and the frame member arranged on the upper surface of the substrate 11 so as to surround the light-emitting element 14 and reflecting the light from the light-emitting element 14. 15.
  • a first frame portion 151 having a first inner curved surface protruding toward the light emitting element side and a second inner curved surface connected to the upper portion of the first frame portion 151 and protruding toward the light emitting element side.
  • a connecting portion 153 connected to the second frame portion 152 is positioned at the same height as the upper surface 141 of the light emitting element 14 .
  • the inclination angle of the first inner peripheral curved surface in the connection portion 153 is smaller than the inclination angle of the second inner peripheral curved surface in the connection portion 153, so that the light extraction efficiency of the light emitting device 1 is further improved. make it possible to
  • the difference between the height of the connecting portion 153 and the height of the upper surface 141 of the light-emitting element 14 is preferably 100 ⁇ m or less.
  • the difference between the height of the connection portion 153 and the height of the upper surface 141 of the light emitting element 14 is preferably 100 ⁇ m or less.
  • the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is ⁇ 10% or less of the height H1 of the connecting portion 153, so that the light extraction efficiency is improved. can be further improved.
  • the distance from the light-emitting element 14 to the connecting portion 153 is preferably 300 ⁇ m or less.
  • the optical path length of the light laterally emitted from the light emitting element 14 to the outside of the light emitting device 1 is shortened. 1 makes it possible to further improve the light extraction efficiency.
  • the inclination angle of the tangential plane contacting the inner peripheral surface of the first frame portion 151 and the inner peripheral surface of the second frame portion 152 is preferably 40 degrees or more and 50 degrees or less.
  • the inclination angle of the tangential plane is more likely to be reflected upward of the light emitting device 1, so that the light emitting device 1 can extract light. It makes it possible to improve the efficiency and improve the optical properties.
  • the frame 15 contains resin and titanium oxide, and the content of titanium oxide with respect to the resin is 30 phr or more and 130 phr or less.
  • the reflectance of the frame 15 is improved, so that the light extraction efficiency of the light emitting device 1 can be further improved.
  • the second frame portion 152 is formed thinner than the first frame portion 151 .
  • the light emitting area of the light emitting device 1 is increased, so that the light extraction efficiency of the light emitting device 1 can be further improved.
  • the frame 15 has the first frame portion 151 and the second frame portion 152, but it may further have a third frame portion connected to the upper portion of the second frame portion 152.
  • either one of the connection portion 153 between the first frame portion 151 and the second frame portion 152 and the connection portion between the second frame portion 152 and the third frame portion is the same as the upper surface 141 of the light emitting element 14 .
  • the frame 15 may have a shape in which four or more frame portions are stacked. That is, the frame 15 should have at least the first frame portion 151 and the second frame portion 152 .
  • the light emitting element 14 is arranged on the upper surface of the second wiring 122, but may be arranged on the upper surface of the first wiring 121. Alternatively, the light emitting element 14 may be arranged directly on the upper surface of the substrate 11 .
  • the second frame portion 152 has the second inner curved surface protruding toward the light emitting element 14 side, but the inner peripheral surface of the second frame portion 152 may be formed flat. That is, only the inner peripheral surface of the first frame portion 151 may be a curved surface protruding toward the light emitting element 14 side. In this case also, the light emitted laterally from the upper surface 141 of the light emitting element 14 is reflected upward by the first inner curved surface, so that the light emitting device 1 can improve the light extraction efficiency.
  • the frame 15 has a rectangular shape, but it is not limited to such an example, and the frame 15 may have any shape surrounding the light emitting element 14, such as a circular shape.
  • FIG. 15 is a plan view of the light emitting device 2 according to the second embodiment
  • FIG. 16 is a cross-sectional view of the light emitting device 2.
  • FIG. 16 is a cross-sectional view along line XVI--XVI of FIG. 15.
  • FIG. The light emitting device 2 differs from the light emitting device 1 in that it has a substrate 21 instead of the substrate 11 and a frame 25 instead of the frame 15 .
  • symbol is attached
  • the substrate 21 differs from the substrate 11 in that it is formed in a substantially square flat plate shape.
  • the frame 25 is arranged on the upper surface of the substrate 21 along the outer circumference of the substrate 21 . By arranging the frame 25 along the outer periphery of the substrate 21, the inner periphery of the frame 25 also has a substantially square planar shape.
  • the light emitting element 14 is arranged on the upper surface of the second wiring 122 so as to be positioned in the center of the frame 25 .
  • the four side surfaces of the light emitting element 14 and the connecting portions 153 of the frame 25 facing the respective side surfaces are separated. are substantially equal to each other.
  • All of the distances D1 to D4 are preferably 300 ⁇ m or less, more preferably 200 ⁇ m or less.
  • FIG. 17 is a plan view of the light emitting device 3 according to the third embodiment
  • FIGS. 18 and 19 are sectional views of the light emitting device 3.
  • FIG. 18 is a cross-sectional view along line XVIII-XVIII in FIG. 17, and
  • FIG. 19 is a cross-sectional view along line XIX-XIX in FIG.
  • the light-emitting device 3 differs from the light-emitting device 1 in that it has a frame 35 instead of the frame 15 .
  • the frame 35 is different from the frame 15 in that the inner periphery is arranged so as to be in contact with the outer periphery of the first wiring 121 and the second wiring 122 . That is, the frame 35 covers the entire area of the substrate 11 outside the wiring pattern 12 .
  • the area outside the wiring pattern 12 refers to the area outside the rectangular or convex figure that includes the first wiring 121 and the second wiring 122 .
  • the substrate 11 is made of insulating resin, the resin deteriorates (soots) when exposed to light from the light emitting element 14 for a long period of time, and the frame may peel off from the substrate 11 .
  • the frame 35 reflects the light from the light emitting element 14, such deterioration is less likely to occur.
  • the entire area outside the first wiring 121 and the second wiring 122 is covered with the frame 35 , so that the deterioration range of the substrate 11 is reduced. It is possible to reduce the possibility of peeling off from the substrate 11 .
  • the frame 35 is in contact with the outer peripheries of the first wiring 121 and the second wiring 122 . Since the frame 3 is in contact with the outer periphery of the first wiring 121 and the second wiring 122, the distance from the light emitting element 14 to the connection portion 153 of the frame 35 is reduced, and the light is emitted sideways from the light emitting element 14. Since the amount of attenuation of the emitted light before it reaches the connecting portion 153 is small, the light emitting device 3 can further improve the light extraction efficiency.
  • FIG. 20 is a cross-sectional view of the light emitting device 4 according to the fourth embodiment. 20 is a cross-sectional view in the same cross-section as FIG. 19. FIG.
  • the light-emitting device 4 differs from the light-emitting device 1 in that it has a frame 45 instead of the frame 15 .
  • the frame 45 is different from the frame 15 in that it is arranged so as to cover the outer peripheral portions of the first wiring 121 and the second wiring 122 . That is, like the frame 35, the frame 45 covers the entire region outside the first wiring 121 and the second wiring 122 of the substrate 11, and further covers the outer peripheral portions of the first wiring 121 and the second wiring 122. cover.
  • the first wiring 121 and the second wiring 122 are made of silver, reflect the light from the light emitting element 14 and emit it to the outside of the light emitting device 1 . Since the sulfide gas has a property of permeating resin, when the light emitting device is used in an environment where the sulfide gas exists, the sulfide gas passes through the sealing material 16 made of resin to form the first wiring 121 and the second wiring 122 . and degrades the first wiring 121 and the second wiring 122 . When the first wiring 121 and the second wiring 122 deteriorate, the reflectance of the light from the light emitting element 14 on the first wiring 121 and the second wiring 122 may be lowered, and the light extraction efficiency may be lowered.
  • the frame 45 covers the outer circumferences of the first wiring 121 and the second wiring 122, so that the light reaching the outer circumferences of the first wiring 121 and the second wiring 122 is affected by the sulfide gas. It is reflected by the frame 45 which is not there. Light that has reached the outer peripheral portions of the first wiring 121 and the second wiring 122 is reflected by the frame 45, so that the light emitting device 4 can suppress the degree of deterioration in light extraction efficiency due to the influence of the sulfide gas. do.
  • the frame 45 is preferably formed so as to cover a range of 100 ⁇ m from the outer peripheries of the first wiring 121 and the second wiring 122 in order to further suppress the deterioration of the light extraction efficiency.
  • FIG. 21 is a plan view of the light emitting device 5 according to the fifth embodiment
  • FIG. 22 is a cross-sectional view of the light emitting device 5.
  • FIG. 22 is a cross-sectional view taken along line XXII--XXII of FIG. 21.
  • FIG. The light-emitting device 5 differs from the light-emitting device 1 in that it has a frame 55 instead of the frame 15 .
  • the frame body 55 has a first frame portion 551 , a second frame portion 552 connected to the upper portion of the first frame portion 551 , and a third frame portion 553 connected to the upper portion of the second frame portion 552 .
  • the first frame portion 551 has a first inner curved surface protruding toward the light emitting element 14 side
  • the second frame portion 552 has a second inner curved surface protruding toward the light emitting element 14 side
  • 553 has a third inner curved surface protruding toward the light emitting element 14 side.
  • the third frame portion 553 is formed thicker than the first frame portion 551 and the second frame portion 552, covers the upper surface of the second frame portion 552, and also covers the outer peripheral surfaces of the first frame portion 551 and the second frame portion 552. to cover.
  • the first frame portion 551 has an upwardly convex cross-sectional shape
  • the second frame portion 552 has a downwardly convex cross-sectional shape
  • the first frame portion 551 has an upwardly convex cross-sectional shape
  • the second frame portion 552 has a downwardly convex cross-sectional shape.
  • the second frame portion 552 has an upwardly convex cross-sectional shape
  • the third frame portion 553 has a downwardly convex cross-sectional shape.
  • the first frame portion 551 has an upwardly convex cross-sectional shape and the second frame portion 552 has a downwardly convex cross-sectional shape. Therefore, the light emitting device 1 can improve the light extraction efficiency.
  • the connecting portion 555 between the second frame portion 552 and the third frame portion 553 is positioned at the same height as the top surface 141 of the light emitting element 14 .
  • the connecting portion 555 By positioning the connection portion 555 at the same height as the upper surface 141 of the light emitting element 14, most of the light emitted sideways from the light emitting element 14 is emitted to the outside of the light emitting device 1 by one reflection. , the light extraction efficiency is further improved.
  • the connecting portion 555 the connecting portion 554 between the first frame portion 551 and the second frame portion 552 may be arranged at the same height as the upper surface 141 of the light emitting element 14 .
  • first frame portion 551 and the second frame portion 552 may be formed flat at the connecting portion 554 between the first frame portion 551 and the second frame portion 552 . That is, V-shaped or sawtooth-shaped grooves may be formed in the connecting portion 554 . In this case also, the light emitted sideways from the light emitting element 14 is reflected upward at the connecting portion 554, so that the light emitting device 5 can improve the light extraction efficiency. Similarly, a V-shaped or sawtooth-shaped groove may be formed at the connecting portion 555 between the second frame portion 552 and the third frame portion 553 .
  • FIG. 23 is a plan view of the light emitting device 6 according to the sixth embodiment
  • FIG. 24 is a cross-sectional view of the light emitting device 6.
  • FIG. 24 is a cross-sectional view taken along line XXIV--XXIV of FIG. 22.
  • the light emitting device 6 differs from the light emitting device 1 in that it has a substrate 61 instead of the substrate 11 and a frame 65 instead of the frame 15 .
  • the substrate 61 differs from the substrate 11 in that it has a plurality of recesses 611 (indicated by broken lines in FIG. 23) on the outer periphery of the upper surface. A plurality of recesses 611 are provided along a pair of opposing sides of the rectangular substrate 61 .
  • the frame 65 differs from the frame 15 in that it has a plurality of protrusions 654 on the outer circumference of the lower surface. The plurality of protrusions 654 are provided at positions and shapes corresponding to the recesses 611 respectively.
  • the frame 65 is fixed to the substrate 61 by fitting the protrusions 654 into the recesses 611 .
  • the recesses 611 are provided along a pair of opposing sides of the rectangular substrate 61 , but the present invention is not limited to this example, and the recesses 611 are provided along each side of the substrate 61 . may be provided along only one side. Further, in the above description, a plurality of recesses 611 are provided along the side, but the present invention is not limited to such an example, and only one recess 611 extending from one end to the other end of one side is provided. may be provided.
  • FIG. 25 is a plan view of the light emitting device 7 according to the seventh embodiment
  • FIG. 26 is a cross-sectional view of the light emitting device 7.
  • FIG. 26 is a cross-sectional view taken along line XXVI--XXVI of FIG. 25.
  • the light emitting device 7 differs from the light emitting device 1 in that it has a substrate 71 instead of the substrate 11 and a frame 75 instead of the frame 15 .
  • the substrate 71 differs from the substrate 11 in that it has a plurality of recesses 711 (indicated by rectangular dashed lines in FIG. 25) on its upper surface.
  • the plurality of recesses 711 extends along a pair of opposing sides of the rectangular substrate 71 and is provided along the inner periphery of the frame 75 .
  • the frame 75 differs from the frame 15 in that it has a plurality of projections 754 on the inner periphery of the lower surface.
  • the plurality of protrusions 754 are provided at positions and shapes corresponding to the recesses 711 respectively.
  • the frame 75 is fixed to the substrate 71 by fitting the projections 754 into the recesses 711 .
  • the frame 75 By fixing the frame 75 to the substrate 71 by fitting the projections 754 into the recesses 711, even if the resin forming the substrate 71 deteriorates (soots), the frame 75 can be removed, as in the case of the light emitting device 6. is detached from the substrate 71 is reduced.
  • the convex portion 754 is provided along the inner circumference of the frame 75 , the light emitted downward from the light emitting element 14 and transmitted through the substrate 71 is reflected by the convex portion 754 and is emitted from the side surface of the light emitting device 7 to the outside. will no longer leak into the
  • the recesses 711 are provided along a pair of opposing sides of the rectangular substrate 61 , but the present invention is not limited to this example, and the recesses 711 are provided along each side of the substrate 71 . may be provided along only one side. Further, in the above description, the concave portion 711 is provided extending along the side, but the present invention is not limited to such an example, and a plurality of concave portions 711 may be provided along the side.
  • FIG. 27 is a plan view of the light emitting device 8 according to the eighth embodiment
  • FIG. 28 is a cross-sectional view of the light emitting device 8 (No. 1)
  • FIG. 29 is a cross-sectional view of the light emitting device 8 (No. 2).
  • 28 is a cross-sectional view along line XXVIII--XXVIII of FIG. 27, and
  • FIG. 29 is a cross-sectional view along line XXIX--XXIX of FIG.
  • the light-emitting device 8 differs from the light-emitting device 1 in that it has a frame 85 instead of the frame 15 .
  • the frame body 85 includes a first frame portion 851 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 851 and protruding toward the light emitting element 14 side. and a second frame portion 852 .
  • the frame 85 has a shape in which the second frame 852 is stacked on the first frame 851 .
  • a connecting portion 853 between the first frame portion 851 and the second frame portion 852 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 .
  • the first inner curved surface and the second inner curved surface each have an upwardly convex cross-sectional shape.
  • the first frame portion 851 and the second frame portion 852 are formed so that the width of the portions arranged at both ends in the longitudinal direction of the substrate 11 is wider than the width of the portions arranged at both ends in the width direction of the substrate 11. be done.
  • the first frame portion 851 and the second frame portion 852 are arranged at both ends of the substrate 11 in the longitudinal direction because the width of both ends of the substrate 11 in the longitudinal direction is wider than the width of both ends of the substrate 11 in the lateral direction.
  • the width of the body 85 is wider than the width of the frames 85 arranged at both ends of the substrate 11 in the short direction.
  • the distance DL between the upper end of the second inner peripheral curved surface of the second frame portion 852 arranged in the longitudinal direction and the upper end of the second inner peripheral curved surface of the second frame portion 852 arranged in the lateral direction is It is the same as the distance DS between the top edges.
  • the distance DL is considered to be the same as the distance DS.
  • the shape of the upper surface of the sealing member 16, which is arranged so that the end portion is in contact with the upper end of the second inner peripheral curved surface of the second frame portion 852 is square when viewed from above. .
  • the planar shape of the upper surface of the encapsulant 16, that is, the light emitting surface of the light emitting device 8 is square.
  • the light emitting device 8 Since the light emitting surface of the light emitting device 8 has a rectangular planar shape, the light emitting device 8 functions as a point light source having the same directivity in the longitudinal direction and the lateral direction of the rectangular substrate 11 having sides extending in the longitudinal direction and the lateral direction. can function.
  • the frame body 85 covers and protects the joint portion where the first wiring 121 and the bonding wire 17 are joined and the joint portion where the second wiring 122 and the bonding wire 18 are joined. Further, the frame 85 is arranged so as to cover the first wiring 121 and the second wiring 122 arranged above the through-hole.
  • the first wiring 121 and the second wiring 122 arranged above the through-hole may be recessed more than other portions of the first wiring 121 and the second wiring 122 .
  • the frame 85 is arranged so as to cover the concave portions of the first wiring 121 and the second wiring 122 formed above the through holes. Phosphors are prevented from precipitating in the recesses. In the light-emitting device 8, since the phosphor does not precipitate in the recesses formed in the first wiring 121 and the second wiring 122, it is possible to prevent color unevenness caused by yellow light emitted from the phosphor deposited in the recesses. . In addition, in the light emitting device 8, the frame 85 is arranged so as to cover the concave portions formed in the first wiring 121 and the second wiring 122. Therefore, even if air bubbles are generated in the concave portions, the optical characteristics are unlikely to deteriorate. .
  • FIG. 30 is a plan view of the light emitting device 9 according to the ninth embodiment
  • FIG. 31 is a cross-sectional view of the light emitting device 9 (No. 1)
  • FIG. 32 is a cross-sectional view of the light emitting device 9 (No. 2).
  • 31 is a cross-sectional view along line XXXI--XXXI of FIG. 30, and
  • FIG. 32 is a cross-sectional view along line XXXII--XXXII of FIG.
  • the light emitting device 9 differs from the light emitting device 8 in that it has a frame 95 instead of the frame 85 .
  • the frame body 95 includes a first frame portion 951 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 951 and protruding toward the light emitting element 14 side. and a second frame portion 952 .
  • the frame 95 has a shape in which the second frame 952 is stacked on the first frame 951 .
  • a connection portion 953 between the first frame portion 951 and the second frame portion 952 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 .
  • the first inner curved surface and the second inner curved surface each have an upwardly convex cross-sectional shape.
  • the first frame portion 951 and the second frame portion 952 are arranged at both ends in the longitudinal direction of the substrate 11 so that the width of the portion is equal to the width of the substrate 11 in the lateral direction. It is formed so as to be wider than the width of the portions arranged at both ends. Since the width of both ends of the substrate 11 in the longitudinal direction is wider than the width of both ends of the substrate 11 in the lateral direction, the first frame portion 951 and the second frame portion 952 are arranged at both ends of the substrate 11 in the longitudinal direction. The width of the body 95 is wider than the width of the frame 95 arranged at both ends of the substrate 11 in the short direction.
  • the distance DL between the upper end of the second inner peripheral curved surface facing the second frame portion 952 arranged in the longitudinal direction is arranged in the lateral direction, similarly to the first frame portion 851 and the second frame portion 852. is the same as the distance DS between the upper ends of the second inner peripheral curved surfaces of the second frame portion 952 facing each other. Since the distance DL is the same as the distance DS, the shape of the upper surface of the sealing material 16, which is arranged so that the end portion is in contact with the upper end of the second inner peripheral curved surface of the second frame portion 952, is square when viewed from above. .
  • the planar shape of the upper surface of the sealing material 16 that is, the light emitting surface of the light emitting device 9 is square like the planar shape of the light emitting surface of the light emitting device 8 .
  • the distance DL1 between the tip of the first frame portion 951 arranged in the longitudinal direction and the light emitting element 14 is the distance between the tip of the first frame portion 951 arranged in the lateral direction and the light emitting element 14. longer than the separation distance DS1. Since the distance between the edge of the substrate 11 and the light emitting element 14 is relatively short and the surface of the substrate 11 is flat, the first frame portion 951 arranged in the lateral direction does not It is easy to control the separation distance from the light emitting element 14 . On the other hand, in the first frame portion 951 arranged in the longitudinal direction, the distance between the end portion of the substrate 11 and the light emitting element 14 is relatively long and the surface of the substrate 11 is uneven. It is not easy to control the distance between the tip of the light emitting element 14 and the light emitting element 14 .
  • the first frame portion 951 arranged in the longitudinal direction is arranged further away from the light emitting element 14 than the first frame portion 951 arranged in the lateral direction, so that the first frame portion 951 emits light. It is possible to reduce the risk of lowering the luminous efficiency of the light emitting device 9 due to contact with the element 14 .
  • the directivity in the longitudinal direction is reduced. can be made different from the directivity in the lateral direction.
  • the first frame portion 951 arranged in the longitudinal direction is arranged further away from the light emitting element 14 than the first frame portion 951 arranged in the lateral direction.
  • the separation distances between the four sides of the light emitting element and the first frame may be different from each other.
  • the directivity peak position of the emitted light can be displaced from the top of the light emitting element 14 by arranging the four sides of the light emitting element and the first frame portion with different separation distances.
  • the separation distance between the edge of the substrate and the tip of the first frame in the lateral direction is equal to the distance between the tip of the first frame and the edge of the light emitting element. It is preferably longer than the separation distance.
  • the length obtained by adding the separation distance between the ends of the pair of first frame portions facing each other and the end portion of the substrate in the short direction is the length of the pair of first frame portions facing each other. More preferably, it is longer than the sum of the distance between the tip and the edge of the light emitting element.
  • the separation distance between the edge of the substrate and the tip of the first frame in the lateral direction is the same as the separation between the edge of the substrate and the tip of the second frame. It is preferably less than twice the distance.
  • FIG. 33 is a diagram for explaining a preferable layout in the short direction of the light emitting device according to the embodiment.
  • FIG. 33 is a cross-sectional view corresponding to FIG.
  • the separation distance W1L between the edge of the substrate 11 and the tip of the first frame 151 is the separation distance between the tip of the first frame 151 and the edge of the light emitting element 14. It is preferably longer than (WD-W1L). Further, in the light emitting device according to the embodiment, the separation distance W1R between the edge of the substrate 11 and the tip of the first frame 151 is equal to the distance between the tip of the first frame 151 and the edge of the light emitting element 14 It is preferably longer than the separation distance (WD-W1R).
  • the length obtained by adding the separation distance between the ends of the pair of first frame portions 151 facing each other and the end portion of the substrate 11 is More preferably, it is longer than the sum of the separation distance from the edge of the light emitting element 14 .
  • the length obtained by adding the separation distance between the tip of the pair of first frame portions 151 and the edge of the substrate 11 is represented by (W1L+W1R), and the tip of the pair of first frame portions 151 and the edge of the light emitting element 14 Since the length obtained by adding the distance between (W1L+W1R) ⁇ (2 ⁇ WD-(W1L+W1R)) (1) relationship is established.
  • equation (1) teeth, (W1L+W1R) ⁇ ((WS-WD)-(W1L+W1R)) (2) , the length obtained by adding the width (WS) of the substrate 11 in the lateral direction, the width (WE) of the light emitting element 14, and the separation distance between the tip of the pair of first frame portions 151 and the edge of the substrate 11 (W1L+W1R) is 2 ⁇ (WS ⁇ WD)/(W1L+W1R) have a relationship with
  • the separation distance W1L between the edge of the substrate 11 and the tip of the first frame 151 in the lateral direction is the distance between the edge of the substrate 11 and the tip of the second frame 152. It is preferable that the separation distance W2L between them is two times or less. Further, in the light emitting device according to the embodiment, the separation distance W1R between the edge of the substrate 11 and the tip of the first frame 151 in the lateral direction is It is preferably less than twice the separation distance W2R between.
  • the width (WE) of the light emitting element 14 is twice or more the length (WS) of the substrate 11 in the lateral direction, WS ⁇ 2 ⁇ WE, that is, when WD becomes smaller, both ends of the light emitting element 14 3, the light directed to the side from the light emitting element 14 can be suppressed from being transmitted through the first frame portion 151, the amount of light emitted from the light emitting device 1 can be maintained, and the directivity of the light can be narrowed. can be done.
  • FIGS. 34(a) to 34(g) are diagrams showing the directivity when the separation distance between the tip of the first frame portion 151 and the end portion of the light emitting element 14 is changed.
  • the horizontal axis indicates the angle and the vertical axis indicates the radiation intensity.
  • the simulations shown in FIGS. 34(a)-34(g) were performed using Synopsys' LightTools as a simulator.
  • 34(a) shows the directivity when the separation distance between the tip of the first frame 151 and the end of the light emitting element 14 is 80 ⁇ m
  • FIG. 34(b) shows the tip of the first frame 151.
  • FIG. and the edge of the light emitting element 14 is 180 ⁇ m.
  • FIG. 34(c) shows the directivity when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 280 ⁇ m
  • FIG. 34(d) shows the tip of the first frame portion 151. and the edge of the light emitting element 14 is 380 ⁇ m
  • FIG. 34(e) shows the directivity when the separation distance between the tip of the first frame 151 and the end of the light emitting element 14 is 480 ⁇ m
  • FIG. 34(f) shows the tip of the first frame 151. and the edge of the light emitting element 14 is 580 ⁇ m
  • FIG. 34(g) shows the directivity when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 680 ⁇ m.
  • the radiation intensity is 0° when the angle is ⁇ 25°. is within ⁇ 1% of the radiant intensity of the maximum. Also, the radiation intensity is within ⁇ 5% of the radiation intensity at 0° when the angle is ⁇ 35°, and a flat directivity of light is obtained.
  • the maximum radiation intensity increases by 1% from the radiation intensity at 0°. As shown in FIG. 34(a), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 80 ⁇ m, the radiation intensity is 0° when the angle is ⁇ 25°. is within ⁇ 1% of the radiant intensity of the maximum. Also, the radiation intensity is within ⁇ 5% of the radiation intensity at 0° when the angle is ⁇ 35°, and a flat directivity of light is obtained.
  • the maximum radiation intensity increases by 1% from the radiation intensity at 0°. As shown in FIG.
  • the radiant intensity is 0° when the angle is ⁇ 25°. is within ⁇ 1% of the radiant intensity of the maximum. Also, the radiation intensity is within ⁇ 5% of the radiation intensity at 0° when the angle is ⁇ 35°, and a flat directivity of light is obtained.
  • the maximum radiation intensity increases by 1% from the radiation intensity at 0°. As shown in FIG.
  • the radiation intensity is maximized at ⁇ 25°. Also, the radiation intensity is within ⁇ 5% of the radiation intensity at 0° when the angle is ⁇ 40°, and flat directivity of light is obtained.
  • the maximum radiation intensity increases by 4% from the radiation intensity at 0°.
  • the radiation intensity reaches its maximum at ⁇ 25° to ⁇ 30°.
  • the maximum radiation intensity increases by 6% from the radiation intensity at 0°.
  • the radiant intensity is maximized at ⁇ 30°.
  • the maximum radiation intensity increases by 10% from the radiation intensity at 0°.
  • the radiant intensity is maximized at ⁇ 35°.
  • the maximum radiation intensity increases by 14% from the radiation intensity at 0°.
  • the radiation intensity is maximized at ⁇ 35°.
  • the maximum radiation intensity increases by 16% from the radiation intensity at 0°.
  • the maximum radiant intensity increases by 5% or more from the radiant intensity at 0°, variations in light output can be perceived, which is not preferable.
  • the maximum radiant intensity is less than 5 % of the radiant intensity at 0° and has good directivity.
  • the maximum radiation intensity is 5 % or more of the radiation intensity at 0°, and does not have good directivity.

Abstract

This light emission device has: a substrate; a light emission element disposed on the upper surface of the substrate; a frame body, disposed on the upper surface of the substrate so as to surround the light emission element, for reflecting light from the light emission element; and, a sealing material that is disposed inside the frame body, includes a phosphor for emitting light obtained by converting the wavelength of light emitted from the light emission element, and seals the light emission element. The frame body has: a first frame section having a first inner peripheral curved surface that protrudes toward the light emission element; and, a second frame section having a second inner peripheral curved surface. The connecting section between the first frame section and the second frame section is disposed so as to be at the same height as the upper surface of the light emission element.

Description

発光装置light emitting device
 本開示は、発光装置に関する。 The present disclosure relates to a light emitting device.
 基板上にLED(Light Emitting Diode)等の発光素子と、発光素子に電力を供給するための電極及び配線とを実装し、パッケージ化した発光装置が知られている。このような発光装置において、発光素子からの光の取出し効率を向上させることが求められている。 A light-emitting device is known in which a light-emitting element such as an LED (Light Emitting Diode) and electrodes and wiring for supplying power to the light-emitting element are mounted on a substrate and packaged. In such a light-emitting device, it is required to improve the light extraction efficiency from the light-emitting element.
 特開2008-41290号公報には、発光素子を囲むように、発光素子からの光を反射する枠体を基板上に複数段重ねるように配置した発光装置において、発光素子から側方に出射された光が枠体で反射されて、発光装置の外部に取り出されることが記載されている。 Japanese Patent Application Laid-Open No. 2008-41290 discloses a light-emitting device in which a plurality of frames that reflect light from a light-emitting element are stacked on a substrate so as to surround the light-emitting element. It is described that the emitted light is reflected by the frame and extracted to the outside of the light emitting device.
 発光装置の発光面からは、できるだけ一様で可能な限り多くの光が出射される事が望ましい。そのために発光装置に枠体を設けた場合、発光素子から出射された光の一部は枠体で反射されるが、枠体が一様な面のみを有する場合、反射方向が制限されて、光の取出し効率が下がる可能性がある。 It is desirable that as much light as possible be emitted from the light emitting surface of the light emitting device as uniformly as possible. Therefore, when the light emitting device is provided with a frame, part of the light emitted from the light emitting element is reflected by the frame. Light extraction efficiency may decrease.
 そこで、特開2008-41290号公報に記載されるように、枠体を複数の曲面で構成することが考えられる。しかしながら、LED等の発光素子から出射される光の多くは、その上面付近から出射される。したがって、発光素子の上面と略同一の高さにおける枠体の反射面が、一様な面のみで構成されると、枠体の反射面が複数の曲面で構成されていても、光の取出し効率を大きく向上させることはできなかった。 Therefore, as described in Japanese Patent Application Laid-Open No. 2008-41290, it is conceivable to configure the frame with a plurality of curved surfaces. However, most of the light emitted from light emitting elements such as LEDs is emitted from the vicinity of the upper surface thereof. Therefore, if the reflective surface of the frame at approximately the same height as the top surface of the light emitting element is composed only of a uniform surface, even if the reflective surface of the frame is composed of a plurality of curved surfaces, light extraction is difficult. No significant improvement in efficiency was achieved.
 本開示は、上述した課題を解決するためになされたものであり、枠体を複数の曲面で構成した上で、曲面と曲面との接続部を、発光素子の上面と略同一の高さに配置することで、光の取出し効率を向上させることを可能とする発光装置を提供することを目的とする。 The present disclosure has been made to solve the above-described problems, and the frame body is configured with a plurality of curved surfaces, and the connecting portion between the curved surfaces is substantially the same height as the upper surface of the light emitting element. An object of the present invention is to provide a light-emitting device capable of improving light extraction efficiency by arranging it.
 本開示に係る発光装置は、基板と、基板の上面に配置された発光素子と、発光素子を囲むように基板の上面に配置され、発光素子からの光を反射する枠体と、枠体の内側に配置され、発光素子から出射された光の波長を変換した光を出射する蛍光体を含み、且つ、発光素子を封止する封止材と、を有し、枠体は、発光素子側に突出した第1内周曲面を有する第1枠部と、第2内周曲面を有する第2枠部と、を有し、第1枠部と第2枠部との接続部は、発光素子の上面と同一の高さとなるように配置されている、ことを特徴とする。 A light-emitting device according to the present disclosure includes a substrate, a light-emitting element arranged on the upper surface of the substrate, a frame arranged on the upper surface of the substrate so as to surround the light-emitting element and reflecting light from the light-emitting element, and a frame. and a sealing material for sealing the light-emitting element, the frame including a phosphor arranged inside and emitting light whose wavelength is converted from the light emitted from the light-emitting element, wherein the frame is on the side of the light-emitting element. a first frame portion having a first inner peripheral curved surface that protrudes outward; and a second frame portion having a second inner peripheral curved surface; It is arranged so as to be the same height as the upper surface of the.
 また、本開示に係る発光装置において、接続部における第1内周曲面の傾斜角は、接続部における第2内周曲面の傾斜角よりも小さい、ことが好ましい。 Further, in the light emitting device according to the present disclosure, it is preferable that the inclination angle of the first inner peripheral curved surface at the connecting portion is smaller than the inclination angle of the second inner peripheral curved surface at the connecting portion.
 また、本開示に係る発光装置において、接続部の基板の表面からの高さと発光素子の上面の基板の表面からの高さとの差は、発光素子の上面の基板の表面からの高さの±10%以下である、ことが好ましい。 Further, in the light emitting device according to the present disclosure, the difference between the height of the connecting portion from the surface of the substrate and the height of the upper surface of the light emitting element from the surface of the substrate is ± the height of the upper surface of the light emitting element from the surface of the substrate. It is preferably 10% or less.
 また、本開示に係る発光装置において、発光素子から接続部までの距離は、300μm以下である、ことが好ましい。 Further, in the light-emitting device according to the present disclosure, it is preferable that the distance from the light-emitting element to the connecting portion is 300 μm or less.
 また、本開示に係る発光装置において、発光素子から接続部までの距離に対する、第2枠部の高さの比は、0.2以上且つ1.5以下である、ことが好ましい。 Further, in the light emitting device according to the present disclosure, it is preferable that the ratio of the height of the second frame portion to the distance from the light emitting element to the connection portion is 0.2 or more and 1.5 or less.
 また、本開示に係る発光装置において、第2枠部は、第1枠部よりも厚く形成され、第1枠部の上部及び外周面を被覆する、ことが好ましい。 Further, in the light-emitting device according to the present disclosure, it is preferable that the second frame is formed thicker than the first frame and covers the upper portion and the outer peripheral surface of the first frame.
 また、本開示に係る発光装置において、第1枠部及び第2枠部は、樹脂及び酸化チタンを含み、第1枠部及び第2枠部において、樹脂を基準とする酸化チタンの含有量は30phr以上且つ130phr以下である、ことが好ましい。 Further, in the light emitting device according to the present disclosure, the first frame portion and the second frame portion contain resin and titanium oxide, and the content of titanium oxide in the first frame portion and the second frame portion based on the resin is It is preferably 30 phr or more and 130 phr or less.
 また、本開示に係る発光装置は、基板の上面において枠体に囲まれるように配置され、発光素子からの光を反射する導電性の配線パターンをさらに有し、発光素子は、配線パターンの上面に配置され、枠体は、配線パターンの外周部を被覆する、ことが好ましい。 Further, the light-emitting device according to the present disclosure further includes a conductive wiring pattern arranged to be surrounded by the frame on the upper surface of the substrate and reflecting light from the light-emitting element, and the light-emitting element is located on the upper surface of the wiring pattern. It is preferable that the frame cover the outer periphery of the wiring pattern.
 また、本開示に係る発光装置において、基板は、矩形の平面形状を有すると共に、発光素子に電気的に接続される第1配線及び第2配線が基板の長手方向に沿って配列され、基板の長手方向の両端に配置される枠体の幅は、基板の短手方向の両端に配置される枠体の幅より広く、封止材の上面は、正方形状の平面形状を有する、ことが好ましい。 Further, in the light emitting device according to the present disclosure, the substrate has a rectangular planar shape, and the first wiring and the second wiring electrically connected to the light emitting element are arranged along the longitudinal direction of the substrate. It is preferable that the width of the frames arranged at both ends in the longitudinal direction is wider than the width of the frames arranged at both ends in the width direction of the substrate, and that the upper surface of the sealing material has a square planar shape. .
 また、本開示に係る発光装置において、基板の長手方向に配置される第1枠部の先端と発光素子との間の離隔距離は、基板の短手方向に配置される第1枠部の先端と発光素子との間の離隔距離よりも長い、ことが好ましい。 Further, in the light-emitting device according to the present disclosure, the separation distance between the tip of the first frame portion arranged in the longitudinal direction of the substrate and the light-emitting element is and the light emitting element.
 また、本開示に係る発光装置において、基板の短手方向において、対向する一対の第1枠部の先端と基板の端部との間の離隔距離を加算した長さは、対向する一対の第1枠部の先端と発光素子との間の離隔距離を加算した長さよりも長い、ことが好ましい。 Further, in the light emitting device according to the present disclosure, in the short direction of the substrate, the length obtained by adding the separation distance between the ends of the pair of first frame portions facing each other and the end portion of the substrate is It is preferably longer than the sum of the separation distance between the tip of one frame and the light emitting element.
 また、本開示に係る発光装置は、凹部が形成された配線パターンが上面に配置される基板と、基板の上面に配置された発光素子と、発光素子を囲むように基板の上面に配置される枠体と、枠体の内側に配置され、発光素子から出射された光の波長を変換した光を出射する蛍光体を含み、且つ、発光素子を封止する封止材と、を有し、枠体は、発光素子側に突出した第1内周曲面を有する第1枠部と、第2内周曲面を有する第2枠部と、を少なくとも有し、第1枠部と第2枠部との接続部は、発光素子の上面と同一の高さとなるように配置され、基板は、矩形の平面形状を有すると共に、発光素子に電気的に接続される第1配線及び第2配線が基板の長手方向に沿って配列され、基板の長手方向の両端に配置される枠体の幅は、基板の短手方向の両端に配置される枠体の幅より広く、基板の長手方向に配置される一対の第1枠部は、凹部を覆うように配置される。 Further, the light-emitting device according to the present disclosure includes a substrate on which a wiring pattern having a concave portion is arranged, a light-emitting element arranged on the upper surface of the substrate, and arranged on the upper surface of the substrate so as to surround the light-emitting element. a frame, and a sealing material that is disposed inside the frame and contains a phosphor that emits light obtained by converting the wavelength of light emitted from the light emitting element and that seals the light emitting element, The frame has at least a first frame portion having a first inner curved surface protruding toward the light emitting element and a second frame portion having a second inner curved surface, the first frame portion and the second frame portion is arranged so as to be at the same height as the upper surface of the light emitting element, the substrate has a rectangular planar shape, and the first wiring and the second wiring electrically connected to the light emitting element are on the substrate The width of the frames arranged along the longitudinal direction and arranged at both ends in the longitudinal direction of the substrate is wider than the width of the frames arranged at both ends in the transverse direction of the substrate, and the width of the frames arranged in the longitudinal direction of the substrate A pair of first frame portions are arranged to cover the recess.
 本開示に係る発光装置は、光の取出し効率を向上させることを可能とする。 The light emitting device according to the present disclosure makes it possible to improve light extraction efficiency.
第1実施形態に係る発光装置の平面図である。1 is a plan view of a light emitting device according to a first embodiment; FIG. 図1に示す発光装置の断面図(その1)である。FIG. 2 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 1; 図1に示す発光装置の断面図(その2)である。FIG. 2 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 1; 図2に示す接続部の高さと発光素子の上面の高さとの関係について説明するための図である。FIG. 3 is a diagram for explaining the relationship between the height of the connection portion shown in FIG. 2 and the height of the upper surface of the light emitting element; 図2に示す接続部の高さと図1に示す発光装置の外部に出射される光の強度との関係を示す図である。3 is a diagram showing the relationship between the height of the connecting portion shown in FIG. 2 and the intensity of light emitted to the outside of the light emitting device shown in FIG. 1; FIG. 図1に示す発光素子から接続部までの距離について説明するための図である。2 is a diagram for explaining a distance from the light emitting element shown in FIG. 1 to a connecting portion; FIG. 図2に示す第2枠部の高さについて説明するための図である。It is a figure for demonstrating the height of the 2nd frame part shown in FIG. 図2に示す第2枠部の高さと図1に示す発光装置の外部に出射される光の強度との関係を示す図である。2. It is a figure which shows the relationship between the height of the 2nd frame part shown in FIG. 2, and the intensity|strength of the light emitted to the exterior of the light-emitting device shown in FIG. 図2に示す接続部における第1内周曲面と第2内周曲面との関係について説明するための図である。3 is a diagram for explaining the relationship between a first inner peripheral curved surface and a second inner peripheral curved surface in the connecting portion shown in FIG. 2; FIG. 第1内周曲面と第2内周曲面との関係について説明するための図である。It is a figure for demonstrating the relationship between a 1st inner peripheral curved surface and a 2nd inner peripheral curved surface. (A)は図1に示す発光装置の色度均一性を示す図であり、(B)は比較例の色度均一性を示す図である。(A) is a diagram showing the chromaticity uniformity of the light emitting device shown in FIG. 1, and (B) is a diagram showing the chromaticity uniformity of a comparative example. 図1に示す発光装置の製造方法の流れの例を示すフロー図である。FIG. 2 is a flowchart showing an example of the flow of a method for manufacturing the light emitting device shown in FIG. 1; 図1に示す発光装置の製造方法の各工程について説明するための模式図である。1. It is a schematic diagram for demonstrating each process of the manufacturing method of the light-emitting device shown in FIG. 図1に示す枠体における酸化チタンの含有量について説明するための図である。FIG. 2 is a diagram for explaining the content of titanium oxide in the frame shown in FIG. 1; 第2実施形態に係る発光装置の平面図である。It is a top view of the light-emitting device which concerns on 2nd Embodiment. 図15に示す発光装置の断面図である。FIG. 16 is a cross-sectional view of the light emitting device shown in FIG. 15; 第3実施形態に係る発光装置の平面図である。It is a top view of the light-emitting device which concerns on 3rd Embodiment. 図17に示す発光装置の断面図である(その1)。FIG. 18 is a cross-sectional view of the light emitting device shown in FIG. 17 (No. 1); 図17に示す発光装置の断面図である(その2)。FIG. 18 is a cross-sectional view of the light emitting device shown in FIG. 17 (No. 2); 第4実施形態に係る発光装置の断面図である。It is a sectional view of a light-emitting device concerning a 4th embodiment. 第5実施形態に係る発光装置の平面図である。FIG. 11 is a plan view of a light emitting device according to a fifth embodiment; 図21に示す発光装置の断面図である。FIG. 22 is a cross-sectional view of the light emitting device shown in FIG. 21; 第6実施形態に係る発光装置の平面図である。FIG. 11 is a plan view of a light emitting device according to a sixth embodiment; 図23に示す発光装置の断面図である。FIG. 24 is a cross-sectional view of the light emitting device shown in FIG. 23; 第7実施形態に係る発光装置の平面図(その1)である。FIG. 21 is a plan view (part 1) of the light emitting device according to the seventh embodiment; 図25に示す発光装置の断面図(その2)である。FIG. 26 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 25; 第8実施形態に係る発光装置の平面図である。FIG. 21 is a plan view of a light emitting device according to an eighth embodiment; 図27に示す発光装置の断面図(その1)である。FIG. 28 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 27; 図27に示す発光装置の断面図(その2)である。FIG. 28 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 27; 第9実施形態に係る発光装置の平面図である。FIG. 21 is a plan view of a light emitting device according to a ninth embodiment; 図30に示す発光装置の断面図(その1)である。31 is a cross-sectional view (part 1) of the light emitting device shown in FIG. 30; FIG. 図30に示す発光装置の断面図(その2)である。FIG. 31 is a cross-sectional view (part 2) of the light emitting device shown in FIG. 30; 実施形態に係る発光装置における短手方向の好ましい配置を説明するための図である。It is a figure for demonstrating preferable arrangement|positioning of the short direction in the light-emitting device which concerns on embodiment. (a)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その1)であり、(b)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その2)であり、(c)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その3)であり、(d)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その4)であり、(e)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その5)であり、(f)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その6)であり、(g)は第1枠部の先端と発光素子の端部との間の離隔距離を変化させたときの指向性を示す図(その7)である。(a) is a diagram (part 1) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, and (b) is the tip of the first frame; and the end of the light emitting element is a diagram (part 2) showing the directivity when changing the separation distance between the tip of the first frame and the end of the light emitting element FIG. 3D is a diagram (part 3) showing the directivity when the separation distance is changed, and (d) shows the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed; is a diagram (part 4), and (e) is a diagram (part 5) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, (f) is a diagram (part 6) showing the directivity when the separation distance between the tip of the first frame and the end of the light emitting element is changed, and (g) is the tip of the first frame; FIG. 11 is a diagram (No. 7) showing the directivity when the separation distance between the edge of the light emitting element is changed.
 以下、図面を参照しつつ、本開示の様々な実施形態について説明する。本開示の技術的範囲は、これらの実施形態には限定されず、特許請求の範囲に記載された発明及びその均等物に及ぶ点に留意されたい。 Various embodiments of the present disclosure will be described below with reference to the drawings. It should be noted that the technical scope of the present disclosure is not limited to these embodiments, but extends to the inventions recited in the claims and their equivalents.
 図1は第1実施形態に係る発光装置の平面図であり、図2及び図3は発光装置1の断面図である。図2は、図1のII-II線に沿う断面図であり、図3は、図1のIII-III線に沿う断面図である。なお、以降では、図2及び図3における上側を発光装置1の上方と称し、下側を発光装置1の下方と称することがある。 1 is a plan view of the light emitting device according to the first embodiment, and FIGS. 2 and 3 are cross-sectional views of the light emitting device 1. FIG. 2 is a cross-sectional view along line II-II of FIG. 1, and FIG. 3 is a cross-sectional view along line III-III of FIG. 2 and 3 may be referred to as the upper side of the light emitting device 1, and the lower side may be referred to as the lower side of the light emitting device 1 hereinafter.
 発光装置1は、基板11、配線パターン12、電極13、単一の発光素子14、枠体15及び封止材16を有する。 The light emitting device 1 has a substrate 11, a wiring pattern 12, an electrode 13, a single light emitting element 14, a frame 15 and a sealing material 16.
 基板11は、フェノール樹脂、エポキシ樹脂、ポリイミド樹脂又はポリエステル樹脂等の電気絶縁性の樹脂により矩形の平板状に形成される。基板11の厚さは、例えば200μmである。 The substrate 11 is formed in a rectangular flat plate shape from an electrically insulating resin such as phenol resin, epoxy resin, polyimide resin or polyester resin. The thickness of the substrate 11 is, for example, 200 μm.
 配線パターン12は、基板11の上面に相互に離隔して設けられる平板状の第1配線121及び第2配線122を有する。第1配線121及び第2配線122は、矩形の平面形状を有し、銀で形成される。第1配線121及び第2配線122は、ワイヤボンディング処理によって、発光素子14との間と電気的な接続可能なボンディングワイヤが配置可能な面積を有する。また、第1配線121と第2配線122との間の離隔距離は、絶縁距離以上の長さを有する。第1配線121及び第2配線122がボンディングワイヤが配置可能な面積を確保し且つ第1配線121と第2配線122との間を絶縁距離以上離隔することで、基板11は、第1配線121及び第2配線122の配列方向を長手方向とする矩形の平面形状を有する。図1及に示す例では、第1配線121及び第2配線122は、基板11の長手方向に沿って並べて配列されている。第1配線121及び第2配線122の厚さは、例えば、50μmである。なお、配線パターン12は、金、銅又はアルミニウムを含む、発光素子14からの光を反射する他の導電性を有する材料で形成されてもよい。 The wiring pattern 12 has flat plate-like first wiring 121 and second wiring 122 provided on the upper surface of the substrate 11 so as to be separated from each other. The first wiring 121 and the second wiring 122 have a rectangular planar shape and are made of silver. The first wiring 121 and the second wiring 122 have an area where bonding wires that can be electrically connected to the light emitting element 14 can be arranged by wire bonding processing. Also, the separation distance between the first wiring 121 and the second wiring 122 has a length equal to or greater than the insulation distance. The first wiring 121 and the second wiring 122 secure an area in which bonding wires can be arranged, and the first wiring 121 and the second wiring 122 are separated by an insulation distance or more. and a rectangular planar shape whose longitudinal direction is the arrangement direction of the second wirings 122 . In the example shown in FIGS. 1 and 2, the first wiring 121 and the second wiring 122 are arranged side by side along the longitudinal direction of the substrate 11 . The thickness of the first wiring 121 and the second wiring 122 is, for example, 50 μm. The wiring pattern 12 may be formed of other conductive material that reflects the light from the light emitting element 14, including gold, copper, or aluminum.
 電極13は、基板11の下面に相互に離隔して設けられる第1電極131及び第2電極132を有する。第1電極131及び第2電極132は、金又は銅等の導電体で形成される。第1電極131は、基板11を上下に貫通する貫通孔(図1では破線で図示)を介して第1配線121と電気的に接続される。同様に、第2電極132は、基板11を上下に貫通する貫通孔(図1では破線で図示)を介して第2配線122と電気的に接続される。第1電極131及び第2電極132は、図示しない外部電源と接続され、配線パターン12を介して発光素子14に電力を供給するために用いられる。 The electrode 13 has a first electrode 131 and a second electrode 132 provided on the lower surface of the substrate 11 and separated from each other. The first electrode 131 and the second electrode 132 are made of a conductor such as gold or copper. The first electrode 131 is electrically connected to the first wiring 121 through a through-hole (indicated by a broken line in FIG. 1) penetrating vertically through the substrate 11 . Similarly, the second electrode 132 is electrically connected to the second wiring 122 through a through-hole (indicated by a dashed line in FIG. 1) penetrating vertically through the substrate 11 . The first electrode 131 and the second electrode 132 are connected to an external power source (not shown) and used to supply power to the light emitting element 14 via the wiring pattern 12 .
 発光素子14は、図1-図3に示すように、第2配線122の上面に、銀ペーストやはんだ等のダイボンドにより固着される。発光素子14は、例えば、440-455nmの波長の光を発する、InGaN系化合物半導体からなる青色LEDである。発光素子14の上面141には一対の素子電極が設けられ、第1の素子電極はボンディングワイヤ17を介して第1配線121と接続され、第2の素子電極はボンディングワイヤ18を介して第2配線122と接続される。 The light emitting element 14 is fixed to the upper surface of the second wiring 122 by die bonding such as silver paste or solder, as shown in FIGS. The light-emitting element 14 is, for example, a blue LED made of an InGaN-based compound semiconductor that emits light with a wavelength of 440-455 nm. A pair of device electrodes are provided on the upper surface 141 of the light emitting device 14 , the first device electrode is connected to the first wiring 121 via the bonding wire 17 , and the second device electrode is connected to the second device electrode via the bonding wire 18 . It is connected to the wiring 122 .
 発光素子14は、例えば、縦横の各辺が650μm、高さが260μmの略直方体形状を有する。発光素子14は、第1配線121と第2配線122との間に、外部電源から電流が供給されることに応じて発光する。発光素子14は、青色LEDに限らず、例えば紫色LEDまたは近紫外LEDであってもよく、その発光波長帯域は、紫外域を含む200-440nm程度の範囲内であってもよい。 The light emitting element 14 has, for example, a substantially rectangular parallelepiped shape with each side of 650 μm in length and width and 260 μm in height. The light emitting element 14 emits light when current is supplied between the first wiring 121 and the second wiring 122 from an external power supply. The light-emitting element 14 is not limited to a blue LED, but may be, for example, a violet LED or a near-ultraviolet LED, and its emission wavelength band may be within the range of about 200-440 nm including the ultraviolet region.
 枠体15は、発光素子14並びに第1配線121及び第2配線122を囲むように、基板11の上面に、基板11の外周に沿って矩形状に配置される。枠体15は、シリコン樹脂又はエポキシ樹脂等の樹脂に酸化チタン(TiO2)の微粒子を分散させることにより形成される白色樹脂であり、発光素子14からの光を反射する。 The frame 15 is arranged in a rectangular shape on the upper surface of the substrate 11 along the outer periphery of the substrate 11 so as to surround the light emitting element 14 and the first wiring 121 and the second wiring 122 . The frame 15 is a white resin formed by dispersing fine particles of titanium oxide (TiO 2 ) in resin such as silicon resin or epoxy resin, and reflects light from the light emitting element 14 .
 枠体15は、発光素子14側に突出した第1内周曲面を有する第1枠部151と、第1枠部151の上部に接続し、発光素子14側に突出した第2内周曲面を有する第2枠部152とを有する。すなわち、枠体15は、第1枠部151の上に第2枠部152が積み重ねられた形状を有する。第1枠部151と第2枠部152との接続部153は、発光素子14の上面141と同一の高さとなるように配置されている。接続部153の基板11の表面からの高さが発光素子14の上面141の基板11の表面からの高さの±10%以下であるとき、接続部153の高さと発光素子14の上面141とは同一であるとされる。図2及び図3に示す例では、第1内周曲面及び第2内周曲面は、それぞれが上方に凸となる断面形状を有している。 The frame 15 includes a first frame portion 151 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 151 and protruding toward the light emitting element 14 side. and a second frame portion 152 . That is, the frame body 15 has a shape in which the second frame portion 152 is stacked on the first frame portion 151 . A connecting portion 153 between the first frame portion 151 and the second frame portion 152 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 . When the height of the connecting portion 153 from the surface of the substrate 11 is ±10% or less of the height of the upper surface 141 of the light emitting element 14 from the surface of the substrate 11, the height of the connecting portion 153 and the upper surface 141 of the light emitting element 14 are equal. are assumed to be the same. In the examples shown in FIGS. 2 and 3, the first inner curved surface and the second inner curved surface each have a cross-sectional shape that is convex upward.
 また、第2枠部152の横方向の幅は、第1枠部151の横方向の幅よりも小さい。すなわち、第2枠部152は、第1枠部151よりも薄く形成されている。第2枠部152を第1枠部151よりも薄く形成することにより、発光装置1の発光面積(封止材16の上面の面積をいう。)が大きくなり、発光装置1の光の取出し効率が向上する。 Also, the lateral width of the second frame portion 152 is smaller than the lateral width of the first frame portion 151 . That is, the second frame portion 152 is formed thinner than the first frame portion 151 . By forming the second frame portion 152 thinner than the first frame portion 151, the light emitting area of the light emitting device 1 (referring to the area of the upper surface of the encapsulant 16) is increased, and the light extraction efficiency of the light emitting device 1 is increased. improves.
 封止材16は、エポキシ樹脂又はシリコン樹脂等の透光性の樹脂である。封止材16は、枠体15によって囲まれる領域に、少なくとも発光素子14の上面141が露出しない高さまで充填されることにより、発光素子14を封止する。封止材16には、発光素子14からの光の波長を変換する蛍光体が混入されている。封止材16には、このような蛍光体として、YAG(Yttrium Aluminum Garnet)などの黄色蛍光体が混入される。発光装置1は、青色LEDである発光素子14からの青色光と、青色光が黄色蛍光体を励起させて得られる黄色光とが混合されることで得られる白色光を出射する。なお、図1-図3では、封止材16が透明であるものとして図示されており、以降も同様とする。 The sealing material 16 is translucent resin such as epoxy resin or silicon resin. The sealing material 16 seals the light emitting element 14 by filling the region surrounded by the frame 15 to a height at least at which the upper surface 141 of the light emitting element 14 is not exposed. A phosphor that converts the wavelength of light emitted from the light emitting element 14 is mixed in the sealing material 16 . A yellow phosphor such as YAG (Yttrium Aluminum Garnet) is mixed in the sealing material 16 as such a phosphor. The light-emitting device 1 emits white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, and yellow light obtained by the blue light exciting a yellow phosphor. 1 to 3, the sealing material 16 is illustrated as being transparent, and the same applies hereinafter.
 前述した黄色蛍光体は一例であって、封止材16は、他の蛍光体を含有してもよい。例えば、封止材16は、緑色蛍光体と赤色蛍光体の2種類を含有してもよい。この場合、発光装置1は、青色LEDである発光素子14からの青色光と、それによって緑色蛍光体および赤色蛍光体を励起させて得られる緑色光および赤色光とを混合させることで得られる白色光を出射する。緑色蛍光体としては、発光素子14が出射した青色光を吸収して緑色光に波長変換する、(BaSr)2SiO4:Eu2+などの粒子状の蛍光体材料を用いることができる。赤色蛍光体としては、発光素子14が出射した青色光を吸収して赤色光に波長変換する、CaAlSiN3:Eu2+などの粒子状の蛍光体材料を用いることができる。 The yellow phosphor described above is an example, and the sealing material 16 may contain other phosphors. For example, the encapsulant 16 may contain two types of green phosphor and red phosphor. In this case, the light-emitting device 1 is a white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, with green light and red light obtained by exciting the green phosphor and the red phosphor with the blue light. emit light. As the green phosphor, a particulate phosphor material such as (BaSr) 2 SiO 4 :Eu 2+ that absorbs the blue light emitted by the light emitting element 14 and converts the wavelength into green light can be used. As the red phosphor, a particulate phosphor material such as CaAlSiN 3 :Eu 2+ that absorbs the blue light emitted by the light emitting element 14 and converts the wavelength into red light can be used.
 前述した緑色蛍光体及び赤色蛍光体は一例であって、封止材16は、前述した黄色蛍光体に少量の緑色蛍光体や少量の赤色蛍光体を添加しても良い。この場合、発光装置1は、青色LEDである発光素子14からの青色光と、それによって黄色蛍光体を励起させて得られる黄色光とが混合されることで得られる白色光を基本とし、同じく励起された緑色光や赤色光も混合されることで、前述の組み合わせほどではないが、演色性を高めた白色光を出射することができる。 The above-described green phosphor and red phosphor are examples, and the sealing material 16 may be obtained by adding a small amount of green phosphor or a small amount of red phosphor to the above-described yellow phosphor. In this case, the light-emitting device 1 is based on white light obtained by mixing blue light from the light-emitting element 14, which is a blue LED, and yellow light obtained by exciting a yellow phosphor with the blue light. By mixing the excited green light and red light, it is possible to emit white light with improved color rendering, though not as much as the above combination.
 図3に示すように、発光素子14から上方に出射された光L1は、封止材16を透過して発光装置1の外部に出射される。発光素子14の上面141の近傍から側方に出射された光L2は、枠体15の接続部153の近傍に到達する。接続部153において、第1枠部151の内周面の傾斜角が小さいため、第1枠部151において光L2は上方に反射され、発光装置1の外部に出射される。仮に、接続部153における枠体15の内周面の傾斜角が大きい場合、発光素子14から側方に出射された光は上方ではなく対向する枠体15の方向に反射され、対向する枠体15の間で複数回の反射を繰り返しながら発光装置1の外部に出射される。この場合、複数回の反射により光が大きく減衰するため、発光装置1としての光の取出し効率が低下する。枠体15において、接続部153における第1枠部151の内周面の傾斜角が小さく形成されることにより、発光素子14から側方に出射された光が一回の反射で発光装置1の外部に出射されるため、光の取出し効率が向上する。 As shown in FIG. 3, the light L1 emitted upward from the light emitting element 14 is transmitted through the sealing material 16 and emitted to the outside of the light emitting device 1 . The light L<b>2 emitted sideways from the vicinity of the upper surface 141 of the light emitting element 14 reaches the vicinity of the connecting portion 153 of the frame 15 . Since the inclination angle of the inner peripheral surface of the first frame portion 151 is small at the connection portion 153 , the light L2 is reflected upward by the first frame portion 151 and emitted to the outside of the light emitting device 1 . If the inclination angle of the inner peripheral surface of the frame 15 at the connecting portion 153 is large, the light emitted to the side from the light emitting element 14 is reflected in the direction of the opposing frame 15 rather than upward, and is reflected toward the opposing frame 15. The light is emitted to the outside of the light emitting device 1 while being repeatedly reflected a plurality of times between 15 . In this case, since the light is greatly attenuated by multiple reflections, the light extraction efficiency of the light emitting device 1 is lowered. In the frame 15 , the inclination angle of the inner peripheral surface of the first frame portion 151 at the connection portion 153 is formed to be small, so that the light emitted sideways from the light emitting element 14 is reflected once to the light emitting device 1 . Since the light is emitted to the outside, the light extraction efficiency is improved.
 また、発光素子14から側方に出射される光の多くは、発光素子14の上面141の近傍から出射される。枠体15において、接続部153が発光素子14の上面141と同一の高さに位置することにより、発光素子14から側方に出射される光の多くが一回の反射で発光装置1の外部に出射されるため、光の取出し効率がより向上する。 Further, most of the light emitted sideways from the light emitting element 14 is emitted from the vicinity of the upper surface 141 of the light emitting element 14 . In the frame 15, the connection portion 153 is positioned at the same height as the upper surface 141 of the light emitting element 14, so that most of the light emitted sideways from the light emitting element 14 is reflected outside the light emitting device 1 once. , the light extraction efficiency is further improved.
 図4は、接続部153の高さと発光素子14の上面141の高さとの関係について説明するための図である。図4は、図3と同様の断面における断面図である。接続部153の高さとは、図4に示すように、配線パターン12の上面に対する接続部153の高さH1をいう。発光素子14の上面141の高さとは、図4に示すように、配線パターン12の上面に対する発光素子14の上面141の高さH2をいう。 FIG. 4 is a diagram for explaining the relationship between the height of the connecting portion 153 and the height of the upper surface 141 of the light emitting element 14. FIG. FIG. 4 is a cross-sectional view in a cross-section similar to that of FIG. The height of the connection portion 153 means the height H1 of the connection portion 153 with respect to the upper surface of the wiring pattern 12, as shown in FIG. The height of the upper surface 141 of the light emitting element 14 means the height H2 of the upper surface 141 of the light emitting element 14 with respect to the upper surface of the wiring pattern 12, as shown in FIG.
 図5は、接続部153の高さと発光装置1の外部に出射される光の強度との関係を示す図である。図5のグラフにおいて、横軸は接続部153の配線パターン12の上面に対する高さH1であり、縦軸は発光装置1の外部に出射される光の強度比率Rである。強度比率Rは、接続部153の高さH2が0μmの場合(すなわち、接続部153の高さが配線パターン12の上面の高さと等しい場合)において発光装置1の外部に出射される光の強度を100%とした場合の強度比率である。なお、図5のグラフに示されるデータは、発光素子14の上面141の高さH2を260μm、枠体15の高さを460μmとして取得されたものである。また、図5には、発光素子14の上面141の高さH2及び枠体15の高さが一点鎖線により示されている。 FIG. 5 is a diagram showing the relationship between the height of the connecting portion 153 and the intensity of light emitted to the outside of the light emitting device 1. As shown in FIG. In the graph of FIG. 5, the horizontal axis is the height H1 of the connection portion 153 from the upper surface of the wiring pattern 12, and the vertical axis is the intensity ratio R of the light emitted to the outside of the light emitting device 1. FIG. The intensity ratio R is the intensity of light emitted to the outside of the light emitting device 1 when the height H2 of the connection portion 153 is 0 μm (that is, when the height of the connection portion 153 is equal to the height of the upper surface of the wiring pattern 12). is 100%. The data shown in the graph of FIG. 5 was acquired with the height H2 of the upper surface 141 of the light emitting element 14 set to 260 μm and the height of the frame 15 set to 460 μm. In FIG. 5, the height H2 of the upper surface 141 of the light emitting element 14 and the height of the frame 15 are indicated by dashed lines.
 図5に示すように、高さH1が概ね110μm以上且つ410μm以下の範囲において、強度比率Rが102%以上となっている。すなわち、接続部153の高さH1と発光素子14の上面141の高さH2との差が150μm以下の範囲において、発光装置1の外部に出射される光の強度が2%以上大きくなっており、光の取出し効率が向上している。 As shown in FIG. 5, the strength ratio R is 102% or more in the range where the height H1 is approximately 110 μm or more and 410 μm or less. That is, in the range where the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is 150 μm or less, the intensity of the light emitted to the outside of the light emitting device 1 is increased by 2% or more. , the light extraction efficiency is improved.
 また、高さH1が概ね230μm以上且つ290μm以下の範囲において、高さH1が概ね110μm以上且つ410μm以下の範囲よりも強度比率Rが更に向上している。すなわち、接続部153の高さH1と発光素子14の上面141の高さH2との差が接続部153の高さH1の±10%の範囲において、発光装置1の外部に出射される光の強度が更に大きくなっており、光の取出し効率が更に向上している。 In addition, in the range where the height H1 is approximately 230 μm or more and 290 μm or less, the strength ratio R is further improved than in the range where the height H1 is approximately 110 μm or more and 410 μm or less. That is, when the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is in the range of ±10% of the height H1 of the connecting portion 153, the amount of light emitted to the outside of the light emitting device 1 is reduced. The intensity is further increased, and the light extraction efficiency is further improved.
 図6は、発光素子14から接続部153までの距離について説明するための図である。図6は、図3と同様の断面における断面図である。発光素子14から接続部153までの距離Dとは、図6に示すように、発光素子14の枠体15に対向する側面と接続部153との間の水平方向における距離をいう。距離Dは、300μm以下であることが好ましく、200μm以下であることがより好ましい。発光素子14から接続部153までの距離Dが小さいほど、発光素子14から側方に出射された光が接続部153に到達するまでの減衰量が小さくなるため、発光装置1の外部に出射される光の強度が大きくなり、光の取出し効率がより向上する。なお、図1~図3に示す例では、発光素子14は、枠体15の中央に配置されているが、このような例に限られない。発光素子14は、発光素子14の四つの側面のうち少なくとも一つの側面と、その側面に対向する枠体15との距離Dが300μm以下となるように、枠体15の内側の任意の位置に配置されてもよい。 FIG. 6 is a diagram for explaining the distance from the light emitting element 14 to the connecting portion 153. FIG. FIG. 6 is a cross-sectional view in a cross-section similar to that of FIG. The distance D from the light emitting element 14 to the connection portion 153 is the horizontal distance between the side surface of the light emitting element 14 facing the frame 15 and the connection portion 153, as shown in FIG. The distance D is preferably 300 μm or less, more preferably 200 μm or less. The smaller the distance D from the light emitting element 14 to the connecting portion 153 is, the smaller the amount of attenuation of the light emitted sideways from the light emitting element 14 until it reaches the connecting portion 153 . The intensity of the emitted light is increased, and the light extraction efficiency is further improved. Although the light emitting element 14 is arranged in the center of the frame 15 in the examples shown in FIGS. 1 to 3, the present invention is not limited to such an example. The light emitting element 14 is placed at an arbitrary position inside the frame 15 so that the distance D between at least one of the four side surfaces of the light emitting element 14 and the frame 15 facing the side is 300 μm or less. may be placed.
 また、発光素子14から接続部153までの距離Dが300μm以下とされることにより、封止材16が充填される領域が小さくなるため、樹脂及び蛍光体の必要量が低減され、製造コストを抑えることができる。 In addition, since the distance D from the light emitting element 14 to the connection portion 153 is set to 300 μm or less, the area filled with the sealing material 16 is reduced, so the required amount of the resin and phosphor is reduced, and the manufacturing cost is reduced. can be suppressed.
 図7は、第2枠部152の高さについて説明するための図である。図7は、図3と同様の断面における断面図である。第2枠部152の高さとは、接続部153の高さに対する第2枠部152の頂部の高さH3をいう。 FIG. 7 is a diagram for explaining the height of the second frame portion 152. FIG. FIG. 7 is a cross-sectional view in a cross-section similar to that of FIG. The height of the second frame portion 152 refers to the height H3 of the top portion of the second frame portion 152 with respect to the height of the connection portion 153 .
 図8は、第2枠部152の高さと発光装置1の外部に出射される光の強度との関係を示す図である。図8のグラフにおいて、横軸は発光素子14から接続部153までの距離Dに対する第2枠部153の高さの比H3/Dであり、縦軸は発光装置1の外部に出射される光の強度比率Rである。図8に示すデータは、発光素子14から接続までの距離Dを150μmから400μmの範囲で変化させるとともに、第2枠部152の高さを適宜変化させて取得されたものである。強度比率Rは、上述の手法で取得されたデータのうち、光の強度が最も大きいものを100%とした場合の光の強度の比率である。 FIG. 8 is a diagram showing the relationship between the height of the second frame portion 152 and the intensity of light emitted to the outside of the light emitting device 1. As shown in FIG. In the graph of FIG. 8, the horizontal axis represents the ratio H3/D of the height of the second frame portion 153 to the distance D from the light emitting element 14 to the connection portion 153, and the vertical axis represents the light emitted to the outside of the light emitting device 1. is the intensity ratio R of The data shown in FIG. 8 was obtained by changing the distance D from the light emitting element 14 to the connection in the range of 150 μm to 400 μm and appropriately changing the height of the second frame portion 152 . The intensity ratio R is the ratio of the intensity of light when the highest intensity of light among the data obtained by the above method is set to 100%.
 図8に示すように、H3/Dが0.8のときに強度比率Rが最大となり、H3/Dが大きくなるに伴い強度比率Rが低下する。また、H3/Dが1.5よりも大きい場合、強度比率Rは95%を下回っている。したがって、H3/Dを1.5以下にすることによって、光の取出し効率が向上するまた、第2枠部153の高さH3が低い場合、発光素子の上面と封止材16の上面が接近し、封止材16の蛍光体が十分に励起されず、白色光が得られなくなるおそれがある。したがって、H3/Dを0.2以上とすることが好ましい。 As shown in FIG. 8, the strength ratio R is maximized when H3/D is 0.8, and the strength ratio R decreases as H3/D increases. Moreover, when H3/D is larger than 1.5, the intensity ratio R is below 95%. Therefore, by setting H3/D to 1.5 or less, the light extraction efficiency is improved. Also, when the height H3 of the second frame portion 153 is small, the upper surface of the light emitting element and the upper surface of the encapsulant 16 are close to each other. However, the phosphor of the sealing material 16 may not be sufficiently excited, and white light may not be obtained. Therefore, it is preferable to set H3/D to 0.2 or more.
 図9は、接続部153における第1内周曲面と第2内周曲面との関係について説明するための図である。図9に示す傾斜角θ1は、接続部153における第1内周曲面の傾斜角、すなわち、接続部153において第1枠部151の内周曲面に接する接平面と基板11とがなす角である。また、傾斜角θ2は、接続部153における第2内周曲面の傾斜角、すなわち、接続部153において第2枠部152の内周曲面に接する接平面と基板11とがなす角である。 FIG. 9 is a diagram for explaining the relationship between the first inner peripheral curved surface and the second inner peripheral curved surface in the connecting portion 153. FIG. The inclination angle θ1 shown in FIG. 9 is the inclination angle of the first inner peripheral curved surface of the connecting portion 153, that is, the angle formed between the substrate 11 and the tangential plane in contact with the inner peripheral curved surface of the first frame portion 151 at the connecting portion 153. . In addition, the inclination angle θ2 is the inclination angle of the second inner peripheral curved surface of the connecting portion 153 , that is, the angle formed between the substrate 11 and the tangential plane in contact with the inner peripheral curved surface of the second frame portion 152 in the connecting portion 153 .
 図9に示すように、傾斜角θ1は、傾斜角θ2よりも小さい。すなわち、接続部153の下側は、接続部153の上側よりも傾斜が緩やかである。接続部153の下側の傾斜を接続部153の上側の傾斜よりも緩やかにすることにより、発光素子14の上面141から接続部153の下側に向かって出射された光が上方に反射されやすくなり、発光装置1の光の取出し効率がより向上する。 As shown in FIG. 9, the tilt angle θ1 is smaller than the tilt angle θ2. In other words, the lower side of the connecting portion 153 has a gentler slope than the upper side of the connecting portion 153 . By making the lower slope of the connection portion 153 gentler than the upper slope of the connection portion 153, the light emitted from the upper surface 141 of the light emitting element 14 toward the lower side of the connection portion 153 is easily reflected upward. As a result, the light extraction efficiency of the light emitting device 1 is further improved.
 図10は、第1内周曲面と第2内周曲面との関係について説明するための図である。図10に示す傾斜角θは、第1枠部151の内周曲面と第2枠部152の内周曲面とに接する接平面の傾斜角、すなわち、第1枠部151の内周曲面と接点P1で接し且つ第2枠部152の内周曲面と接点P2で接する平面と基板11とがなす角である。第1枠部151の内周曲面と第2枠部152の内周曲面とに接する接平面の傾斜角θは、40度以上且つ50度以下であることが好ましく、45度であることがより好ましい。接平面の傾斜角θを40度以上且つ50度以下にすることにより、発光素子14から水平方向に出射される光の多くが枠体15において鉛直上方に反射されるため、発光装置1の光の取出し効率が改善するとともに、発光装置1から外部に出射される光束の広がりが抑えられ、発光装置1の光学特性が改善する。 FIG. 10 is a diagram for explaining the relationship between the first inner peripheral curved surface and the second inner peripheral curved surface. The inclination angle θ shown in FIG. 10 is the inclination angle of the tangential plane contacting the inner peripheral curved surface of the first frame portion 151 and the inner peripheral curved surface of the second frame portion 152, that is, the inner peripheral curved surface of the first frame portion 151 and the contact point. This is the angle formed by the substrate 11 and a plane that is in contact with the inner peripheral curved surface of the second frame portion 152 at P1 and in contact with the contact point P2. The inclination angle θ of the tangential plane that contacts the inner peripheral curved surface of the first frame portion 151 and the inner peripheral curved surface of the second frame portion 152 is preferably 40 degrees or more and 50 degrees or less, more preferably 45 degrees. preferable. By setting the inclination angle θ of the tangential plane to 40 degrees or more and 50 degrees or less, most of the light emitted in the horizontal direction from the light emitting element 14 is reflected vertically upward by the frame 15, so that the light from the light emitting device 1 is is improved, the spread of the luminous flux emitted from the light emitting device 1 to the outside is suppressed, and the optical characteristics of the light emitting device 1 are improved.
 図11(A)は、発光装置1における色度均一性を示す図であり、図11(B)は、比較例における色度均一性を示す図である。比較例は、発光装置1において、枠体15の内周面を発光素子14の側に突出した内周曲面に代えて鉛直面としたものである。また、図11(A)及び(B)に示すグラフにおいて、横軸は短手断面(例えば、図1のIII-III線に沿う断面をいう)における光の出射方向の鉛直上方に対する角度であり、縦軸は鉛直上方に出射された光との色度差を示す。色度差は、CIE XYZ色空間における色度xの差である。 FIG. 11(A) is a diagram showing the chromaticity uniformity in the light emitting device 1, and FIG. 11(B) is a diagram showing the chromaticity uniformity in the comparative example. In the comparative example, in the light-emitting device 1, the inner peripheral surface of the frame 15 is a vertical surface instead of the inner peripheral curved surface protruding toward the light emitting element 14 side. In the graphs shown in FIGS. 11A and 11B, the horizontal axis represents the angle of the light emission direction with respect to the vertical direction in a short cross section (for example, a cross section along line III-III in FIG. 1). , the vertical axis indicates the chromaticity difference from the light emitted vertically upward. Chromaticity difference is the difference in chromaticity x in the CIE XYZ color space.
 図11(B)においては、出射角度が大きくなるにつれて色度差が増加している。すなわち、図11(B)は、比較例においてイエローリングが発生していることを示す。これに対し、図11(A)においては、出射角度が-40度から+40度までの範囲において色度がほぼ一様であり、-80度又は+80度においても色度差は比較例に対して5分の1以下である。すなわち、図11(A)は、発光装置1においてイエローリングが抑制され、色むらのない光が出射されていることを示す。 In FIG. 11(B), the chromaticity difference increases as the emission angle increases. That is, FIG. 11B shows that yellow rings are generated in the comparative example. On the other hand, in FIG. 11A, the chromaticity is almost uniform in the range of the emission angle from -40 degrees to +40 degrees, and even at -80 degrees or +80 degrees, the chromaticity difference is less than that of the comparative example. less than one-fifth. That is, FIG. 11A shows that the yellow ring is suppressed in the light emitting device 1 and light without color unevenness is emitted.
 比較例においては、発光素子14から斜め方向に出射された光は、鉛直上方に出射された光よりも、封止材16の内部における光路長が長くなる。したがって、斜め方向に出射された光は封止材16から出射されるまでにより多くの蛍光体を励起し、鉛直上方に出射された光よりも黄色がかった色となるため、イエローリングが発生する。これに対し、発光装置1においては、発光素子14から斜め方向に出射された光の一部は、枠体15の内周曲面において上方に反射される。したがって、黄色がかった光の出射方向が全体として均一化されるため、イエローリングが抑制される。 In the comparative example, the light emitted obliquely from the light emitting element 14 has a longer optical path length inside the encapsulant 16 than the light emitted vertically upward. Therefore, the light emitted in an oblique direction excites more phosphors before being emitted from the sealing material 16, and becomes yellowish than the light emitted vertically upward, resulting in yellow rings. . On the other hand, in the light emitting device 1 , part of the light emitted obliquely from the light emitting element 14 is reflected upward by the inner peripheral curved surface of the frame 15 . Therefore, the emission direction of the yellowish light is made uniform as a whole, so that the yellow ring is suppressed.
 図12は、発光装置1の製造方法の流れの例を示すフロー図であり、図13は、発光装置1の製造方法の各工程について説明するための模式図である。以下では、一個の発光装置1を製造するための製造方法が説明されるが、以下に説明される製造方法により複数の発光装置1が同時に製造されてもよい。 FIG. 12 is a flow chart showing an example of the flow of the method for manufacturing the light emitting device 1, and FIG. 13 is a schematic diagram for explaining each step of the method for manufacturing the light emitting device 1. FIG. A manufacturing method for manufacturing one light-emitting device 1 will be described below, but a plurality of light-emitting devices 1 may be manufactured simultaneously by the manufacturing method described below.
 最初に、基板・配線準備工程において、図13(A)に示すように、あらかじめ配線パターン12及び電極13が配置された基板11が準備される(ステップS101)。配線パターン12及び電極13は、例えば、無電解銀めっきにより基板11の上面及び下面の所定の位置にそれぞれ配置され、相互に電気的に接続される。 First, in the substrate/wiring preparation process, as shown in FIG. 13A, the substrate 11 on which the wiring pattern 12 and the electrodes 13 are arranged in advance is prepared (step S101). The wiring pattern 12 and the electrodes 13 are arranged at predetermined positions on the upper and lower surfaces of the substrate 11 by, for example, electroless silver plating, and are electrically connected to each other.
 発光素子配置工程において、図13(B)に示すように、第2配線122の上面に発光素子14が配置される(ステップS102)。また、発光素子配置工程において、ボンディングワイヤ17が発光素子14の第1の素子電極と第1配線121とを接続するように配置され、ボンディングワイヤ18が発光素子14の第2の素子電極と第2配線122とを接続するように配置される。 In the light-emitting element arrangement step, as shown in FIG. 13B, the light-emitting element 14 is arranged on the upper surface of the second wiring 122 (step S102). Further, in the light-emitting element placement step, the bonding wires 17 are arranged to connect the first element electrodes of the light-emitting elements 14 and the first wirings 121, and the bonding wires 18 are arranged to connect the second element electrodes of the light-emitting elements 14 and the second element electrodes. 2 wirings 122 are arranged to be connected to each other.
 次に、枠体配置工程において、図13(C)に示すように、基板11の上面に、配線パターン12及び発光素子14を囲むように枠体15が配置される(ステップS103)。まず、シリコン樹脂等の熱硬化性の樹脂液滴に酸化チタンの微粒子が分散されることにより、酸化チタンが含有される白色の樹脂液滴が準備される。続いて、基板11の上面に、配線パターン12を囲むように白色の樹脂液滴が塗布され、塗布された樹脂液滴を加熱して硬化させることにより、第1枠部151が形成される。このとき、第1枠部151の内周面は、樹脂液滴の表面張力により曲面となる。第1枠部151が硬化している間、又は硬化した後に、第1枠部151の上面を押圧することにより、第1枠部151の上面が平坦に形成される。 Next, in the frame arrangement step, as shown in FIG. 13C, the frame 15 is arranged on the upper surface of the substrate 11 so as to surround the wiring patterns 12 and the light emitting elements 14 (step S103). First, white resin droplets containing titanium oxide are prepared by dispersing fine particles of titanium oxide in droplets of thermosetting resin such as silicon resin. Subsequently, white resin droplets are applied to the upper surface of the substrate 11 so as to surround the wiring pattern 12, and the applied resin droplets are heated and cured to form the first frame portion 151. At this time, the inner peripheral surface of the first frame portion 151 becomes a curved surface due to the surface tension of the resin droplets. By pressing the upper surface of the first frame portion 151 during or after the first frame portion 151 is cured, the upper surface of the first frame portion 151 is flattened.
 続いて、平坦に形成された第1枠部151の上面に白色の樹脂液滴がさらに塗布され、塗布された樹脂液滴を加熱して硬化させることにより、第2枠部152が形成される。このとき、第2枠部152の内周面は、樹脂液滴の表面張力により曲面となる。また、第1枠部151の上面が平坦に形成されているため、樹脂液滴が第1枠部151の側面に沿って流れ落ちることが防止される。第2枠部152が硬化している間、又は硬化した後に、第2枠部152の上面を押圧することにより、第2枠部152の上面が平坦に形成される。このようにして、基板11の上面に枠体15が配置される。枠体15において、接続部153を形成するために成形加工や切削加工をする必要がないため、枠体15は簡易に製造可能である。 Subsequently, white resin droplets are further applied to the upper surface of the flat first frame portion 151, and the applied resin droplets are heated and cured to form the second frame portion 152. . At this time, the inner peripheral surface of the second frame portion 152 becomes a curved surface due to the surface tension of the resin droplets. Moreover, since the upper surface of the first frame portion 151 is formed flat, resin droplets are prevented from running down along the side surfaces of the first frame portion 151 . By pressing the upper surface of the second frame portion 152 during or after the second frame portion 152 is cured, the upper surface of the second frame portion 152 is flattened. Thus, the frame 15 is arranged on the upper surface of the substrate 11 . Since the frame 15 does not require molding or cutting to form the connecting portion 153, the frame 15 can be easily manufactured.
 図14は、枠体15における酸化チタンの含有量について説明するための図である。図14のグラフにおいて、横軸は、枠体15における樹脂を基準とする酸化チタンの含有量mを、樹脂の質量100に対する酸化チタンの質量として示したものであり、縦軸は、枠体15の反射率Sである。また、図14には、枠体15の厚さが40μmの場合のデータが実線で、厚さが60μmの場合のデータが破線で、厚さが100μmの場合のデータが一点鎖線でそれぞれ図示されている。 FIG. 14 is a diagram for explaining the content of titanium oxide in the frame 15. FIG. In the graph of FIG. 14, the horizontal axis represents the content m of titanium oxide based on the resin in the frame 15 as the mass of titanium oxide with respect to the mass of the resin 100, and the vertical axis represents the mass of the frame 15. is the reflectance S of . In FIG. 14, the solid line represents the data for the frame 15 with a thickness of 40 μm, the dashed line represents the data for the frame 15 having a thickness of 60 μm, and the one-dot chain line represents the data for the frame 15 having a thickness of 100 μm. ing.
 図14に示すように、何れの厚さの場合も、酸化チタンの含有量mが0phr(すなわち、樹脂単体)のときに枠体15の反射率Sは10%未満となっており、含有量mが30phrのときには反射率Sは概ね80%以上となっている。他方で、酸化チタンの含有量を30phrから130phrまで増加させた場合の反射率Sの増加量は10%未満となっている。また、図示しないが、酸化チタンの含有量mを130phrよりも増加させた場合には、有意な反射率の増加は確認されなかった。したがって、枠体15の反射率を向上させるため、枠体15において、樹脂を基準とする酸化チタンの含有量mは、30phr以上且つ130phr以下であることが好ましい。 As shown in FIG. 14, for any thickness, the reflectance S of the frame 15 is less than 10% when the content m of titanium oxide is 0 phr (that is, the resin alone). When m is 30 phr, the reflectance S is approximately 80% or more. On the other hand, the increase in reflectance S is less than 10% when the content of titanium oxide is increased from 30 phr to 130 phr. Also, although not shown, no significant increase in reflectance was confirmed when the content m of titanium oxide was increased above 130 phr. Therefore, in order to improve the reflectance of the frame 15, the content m of titanium oxide in the frame 15 based on the resin is preferably 30 phr or more and 130 phr or less.
 なお、上述したように第1枠部151及び第2枠部152が樹脂液滴を基板11の上面に塗布することにより形成される場合、各枠部の幅と高さとの比は、樹脂液滴の粘性により定まる。したがって、図10に示した傾斜角θも概ね樹脂液滴の粘性により定まる。そして、樹脂液滴の粘性は、酸化チタンの含有量に応じて変化する。樹脂としてシリコン樹脂を用いた場合、酸化チタンの含有量を60phrとすると、枠体15の幅と高さとの比が概ね2:1となり、傾斜角θが40度以上50度以下となるためより好ましい。 As described above, when the first frame portion 151 and the second frame portion 152 are formed by applying resin droplets on the upper surface of the substrate 11, the width-to-height ratio of each frame portion is the same as that of the resin liquid. Determined by droplet viscosity. Therefore, the inclination angle θ shown in FIG. 10 is also generally determined by the viscosity of the resin droplet. The viscosity of the resin droplets changes according to the content of titanium oxide. When silicon resin is used as the resin and the content of titanium oxide is 60 phr, the ratio of the width to the height of the frame 15 is approximately 2:1, and the angle of inclination θ is 40 degrees or more and 50 degrees or less. preferable.
 図12及び図13に戻り、封止材充填工程において、図13(D)に示すように、枠体15によって囲まれる領域に、発光素子14の上面141が露出しない高さまで封止材16が充填される(ステップS104)。 Returning to FIGS. 12 and 13, in the sealing material filling step, as shown in FIG. It is filled (step S104).
 最後に、ダイシング工程において、図13(E)に示すように、枠体15に沿って枠体15及び基板11が矩形状に切断されることにより、発光装置1が製造される(ステップS105)。このとき、第2枠部152の上面が平坦に形成されているため、切断位置がずれた場合でも、それが切断後の枠体15の高さに影響することはなく、均一な品質の発光装置1が製造される。 Finally, in the dicing step, as shown in FIG. 13E, the light emitting device 1 is manufactured by cutting the frame 15 and the substrate 11 into rectangular shapes along the frame 15 (step S105). . At this time, since the upper surface of the second frame portion 152 is formed flat, even if the cutting position is displaced, the height of the frame body 15 after cutting is not affected by this deviation, and light emission of uniform quality can be obtained. A device 1 is manufactured.
 以上説明したように、発光装置1は、基板11の上面に配置された発光素子14と、発光素子14を囲むように基板11の上面に配置され、発光素子14からの光を反射する枠体15とを有する。また、枠体15において、発光素子側に突出する第1内周曲面を有する第1枠部151と、第1枠部151の上部に接続し、発光素子側に突出する第2内周曲面を有する第2枠部152との接続部153は発光素子14の上面141と同一の高さに位置する。の接続部153の高さを発光素子14の上面141の高さと同一にすることにより、発光装置1は、光の取出し効率を向上させることを可能とする。 As described above, the light-emitting device 1 includes the light-emitting element 14 arranged on the upper surface of the substrate 11, and the frame member arranged on the upper surface of the substrate 11 so as to surround the light-emitting element 14 and reflecting the light from the light-emitting element 14. 15. In the frame 15, a first frame portion 151 having a first inner curved surface protruding toward the light emitting element side and a second inner curved surface connected to the upper portion of the first frame portion 151 and protruding toward the light emitting element side. A connecting portion 153 connected to the second frame portion 152 is positioned at the same height as the upper surface 141 of the light emitting element 14 . By setting the height of the connecting portion 153 to the same height as the upper surface 141 of the light emitting element 14, the light emitting device 1 can improve the light extraction efficiency.
 また、発光装置1において、接続部153における第1内周曲面の傾斜角は、接続部153における第2内周曲面の傾斜角よりも小さいので、発光装置1は、光の取出し効率をより向上させることを可能とする。 In addition, in the light emitting device 1, the inclination angle of the first inner peripheral curved surface in the connection portion 153 is smaller than the inclination angle of the second inner peripheral curved surface in the connection portion 153, so that the light extraction efficiency of the light emitting device 1 is further improved. make it possible to
 また、発光装置1において、接続部153の高さと発光素子14の上面141の高さとの差は、100μm以下であることが好ましい。接続部153の高さと発光素子14の上面141の高さとの差を100μm以下にすることにより、発光素子14から側方に出射された光の多くが一回の反射で発光装置1の外部に出射されるため、発光装置1は、光の取出し効率をより向上させることを可能とする。 Further, in the light-emitting device 1, the difference between the height of the connecting portion 153 and the height of the upper surface 141 of the light-emitting element 14 is preferably 100 μm or less. By setting the difference between the height of the connection portion 153 and the height of the upper surface 141 of the light emitting element 14 to 100 μm or less, most of the light emitted sideways from the light emitting element 14 is reflected outside the light emitting device 1 once. Since the light is emitted, the light emitting device 1 can further improve the light extraction efficiency.
 また、発光装置1は、接続部153の高さH1と発光素子14の上面141の高さH2との差を接続部153の高さH1の±10%以下とすることで、光の取出し効率を更に向上させることを可能とする。 Further, in the light emitting device 1, the difference between the height H1 of the connecting portion 153 and the height H2 of the upper surface 141 of the light emitting element 14 is ±10% or less of the height H1 of the connecting portion 153, so that the light extraction efficiency is improved. can be further improved.
 また、発光装置1において、発光素子14から接続部153までの距離は、300μm以下であることが好ましい。発光素子14から接続部153までの距離を300μm以下にすることにより、発光素子14から側方に出射された光が発光装置1の外部に出射されるまでの光路長が短くなるため、発光装置1は、光の取出し効率をより向上させることを可能とする。 Also, in the light-emitting device 1, the distance from the light-emitting element 14 to the connecting portion 153 is preferably 300 μm or less. By setting the distance from the light emitting element 14 to the connection portion 153 to 300 μm or less, the optical path length of the light laterally emitted from the light emitting element 14 to the outside of the light emitting device 1 is shortened. 1 makes it possible to further improve the light extraction efficiency.
 また、発光装置1において、第1枠部151の内周面と第2枠部152の内周面とに接する接平面の傾斜角は、40度以上50度以下であることが好ましい。接平面の傾斜角を40度以上50度以下にすることにより、発光装置1から側方に出射された光が反射により発光装置1の上方に向かいやすくなるため、発光装置1は、光の取出し効率を向上させるとともに、光学特性を改善することを可能とする。 Further, in the light emitting device 1, the inclination angle of the tangential plane contacting the inner peripheral surface of the first frame portion 151 and the inner peripheral surface of the second frame portion 152 is preferably 40 degrees or more and 50 degrees or less. By setting the inclination angle of the tangential plane to 40 degrees or more and 50 degrees or less, the light emitted to the side from the light emitting device 1 is more likely to be reflected upward of the light emitting device 1, so that the light emitting device 1 can extract light. It makes it possible to improve the efficiency and improve the optical properties.
 また、発光装置1において、枠体15は樹脂及び酸化チタンを含み、樹脂に対する酸化チタンの含有量は30phr以上且つ130phr以下である。樹脂に対する酸化チタンの含有量を30phr以上且つ130phr以下にすることにより、枠体15の反射率が向上するため、発光装置1は、光の取出し効率をより向上させることを可能とする。 Further, in the light emitting device 1, the frame 15 contains resin and titanium oxide, and the content of titanium oxide with respect to the resin is 30 phr or more and 130 phr or less. By setting the content of titanium oxide in the resin to 30 phr or more and 130 phr or less, the reflectance of the frame 15 is improved, so that the light extraction efficiency of the light emitting device 1 can be further improved.
 また、発光装置1において、第2枠部152は、第1枠部151よりも薄く形成されている。第2枠部152を第1枠部151よりも薄く形成することにより、発光装置1の発光面積が大きくなるため、発光装置1は、光の取出し効率をより向上させることを可能とする。 Also, in the light emitting device 1 , the second frame portion 152 is formed thinner than the first frame portion 151 . By forming the second frame portion 152 thinner than the first frame portion 151, the light emitting area of the light emitting device 1 is increased, so that the light extraction efficiency of the light emitting device 1 can be further improved.
 上述した説明では、枠体15は第1枠部151と第2枠部152とを有するものとしたが、さらに第2枠部152の上部に接続する第3枠部を有してもよい。この場合、第1枠部151と第2枠部152との接続部153と、第2枠部152と第3枠部との接続部との何れか一方が発光素子14の上面141と同一の高さに配置されればよい。また、枠体15は、四つ以上の枠部が積み重ねられた形状を有してもよい。すなわち、枠体15は、少なくとも第1枠部151と第2枠部152とを有していればよい。 In the above description, the frame 15 has the first frame portion 151 and the second frame portion 152, but it may further have a third frame portion connected to the upper portion of the second frame portion 152. In this case, either one of the connection portion 153 between the first frame portion 151 and the second frame portion 152 and the connection portion between the second frame portion 152 and the third frame portion is the same as the upper surface 141 of the light emitting element 14 . It should be placed at height. Moreover, the frame 15 may have a shape in which four or more frame portions are stacked. That is, the frame 15 should have at least the first frame portion 151 and the second frame portion 152 .
 上述した説明では、発光素子14は、第2配線122の上面に配置されるものとしたが、第1配線121の上面に配置されるものとしてもよい。また、発光素子14は、基板11の上面に直接に配置されるものとしてもよい。 In the above description, the light emitting element 14 is arranged on the upper surface of the second wiring 122, but may be arranged on the upper surface of the first wiring 121. Alternatively, the light emitting element 14 may be arranged directly on the upper surface of the substrate 11 .
 上述した説明では、第2枠部152は発光素子14側に突出する第2内周曲面を有するものとしたが、第2枠部152の内周面は平面状に形成されてもよい。すなわち、第1枠部151の内周面のみが発光素子14側に突出する曲面であってもよい。この場合も、発光素子14の上面141から側方に出射された光が第1内周曲面で上方に反射されるため、発光装置1は、光取出し効率を向上させることを可能とする。 In the above description, the second frame portion 152 has the second inner curved surface protruding toward the light emitting element 14 side, but the inner peripheral surface of the second frame portion 152 may be formed flat. That is, only the inner peripheral surface of the first frame portion 151 may be a curved surface protruding toward the light emitting element 14 side. In this case also, the light emitted laterally from the upper surface 141 of the light emitting element 14 is reflected upward by the first inner curved surface, so that the light emitting device 1 can improve the light extraction efficiency.
 上述した説明では、枠体15は矩形状であるものとしたが、このような例に限られず、枠体15は円形状等の、発光素子14を囲む任意の形状であってよい。 In the above description, the frame 15 has a rectangular shape, but it is not limited to such an example, and the frame 15 may have any shape surrounding the light emitting element 14, such as a circular shape.
 図15は第2実施形態に係る発光装置2の平面図であり、図16は発光装置2の断面図である。図16は、図15のXVI-XVI線に沿う断面図である。発光装置2は、基板11に代えて基板21を有し、枠体15に代えて枠体25を有する点で発光装置1と相違する。なお、上述した実施形態と同様の構成には同一の符号を付し、適宜説明を省略する。 15 is a plan view of the light emitting device 2 according to the second embodiment, and FIG. 16 is a cross-sectional view of the light emitting device 2. FIG. 16 is a cross-sectional view along line XVI--XVI of FIG. 15. FIG. The light emitting device 2 differs from the light emitting device 1 in that it has a substrate 21 instead of the substrate 11 and a frame 25 instead of the frame 15 . In addition, the same code|symbol is attached|subjected to the structure similar to embodiment mentioned above, and description is abbreviate|omitted suitably.
 基板21は、略正方形の平板状に形成される点で基板11と相違する。枠体25は、基板21の上面に、基板21の外周に沿って配置される。枠体25を基板21の外周に沿って配置することにより、枠体25の内周も略正方形の平面形状を有する。 The substrate 21 differs from the substrate 11 in that it is formed in a substantially square flat plate shape. The frame 25 is arranged on the upper surface of the substrate 21 along the outer circumference of the substrate 21 . By arranging the frame 25 along the outer periphery of the substrate 21, the inner periphery of the frame 25 also has a substantially square planar shape.
 発光素子14は、枠体25の中央に位置するように、第2配線122の上面に配置される。発光素子14を枠体25の中央に位置するように第2配線122の上面に配置することにより、発光素子14の四つの側面と、各側面に対向する枠体25の接続部153との間の距離D1~D4は相互に略等しくなる。距離D1~D4は、何れも300μm以下であることが好ましく、何れも200μm以下であることがより好ましい。距離D1~D4を200μm以下にすることにより、発光素子14から各方向に出射された光が接続部153に到達するまでの減衰量が小さくなるため、発光装置2の外部に出射される光の強度が大きくなり、発光装置2は、光の取出し効率をより向上させることを可能とする。 The light emitting element 14 is arranged on the upper surface of the second wiring 122 so as to be positioned in the center of the frame 25 . By arranging the light emitting element 14 on the upper surface of the second wiring 122 so as to be positioned in the center of the frame 25, the four side surfaces of the light emitting element 14 and the connecting portions 153 of the frame 25 facing the respective side surfaces are separated. are substantially equal to each other. All of the distances D1 to D4 are preferably 300 μm or less, more preferably 200 μm or less. By setting the distances D1 to D4 to 200 μm or less, the amount of attenuation of the light emitted in each direction from the light emitting element 14 until it reaches the connecting portion 153 is reduced. The intensity is increased, and the light emitting device 2 can further improve the light extraction efficiency.
 図17は第3実施形態に係る発光装置3の平面図であり、図18及び図19は発光装置3の断面図である。図18は、図17のXVIII-XVIII線に沿う断面図であり、図19は、図17のXIX-XIX線に沿う断面図である。発光装置3は、枠体15に代えて枠体35を有する点で発光装置1と相違する。 17 is a plan view of the light emitting device 3 according to the third embodiment, and FIGS. 18 and 19 are sectional views of the light emitting device 3. FIG. 18 is a cross-sectional view along line XVIII-XVIII in FIG. 17, and FIG. 19 is a cross-sectional view along line XIX-XIX in FIG. The light-emitting device 3 differs from the light-emitting device 1 in that it has a frame 35 instead of the frame 15 .
 枠体35は、内周が第1配線121及び第2配線122の外周に接するように配置される点で枠体15と相違する。すなわち、枠体35は、基板11の配線パターン12の外側の領域の全部を被覆する。配線パターン12の外側の領域とは、第1配線121及び第2配線122を包含する矩形又は凸形状図形の外側の領域をいう。 The frame 35 is different from the frame 15 in that the inner periphery is arranged so as to be in contact with the outer periphery of the first wiring 121 and the second wiring 122 . That is, the frame 35 covers the entire area of the substrate 11 outside the wiring pattern 12 . The area outside the wiring pattern 12 refers to the area outside the rectangular or convex figure that includes the first wiring 121 and the second wiring 122 .
 基板11は絶縁性の樹脂によって形成されるため、発光素子14からの光を長時間にわたって照射されることで樹脂が劣化(スス化)し、枠体が基板11から剥離する場合がある。他方で、枠体35は、発光素子14からの光を反射するため、このような劣化を生じにくい。基板11において、第1配線121及び第2配線122より外側の領域の全部が枠体35によって被覆されることにより、基板11が劣化する範囲を小さくなるため、発光装置1は、枠体35が基板11から剥離する可能性を低減することを可能とする。 Since the substrate 11 is made of insulating resin, the resin deteriorates (soots) when exposed to light from the light emitting element 14 for a long period of time, and the frame may peel off from the substrate 11 . On the other hand, since the frame 35 reflects the light from the light emitting element 14, such deterioration is less likely to occur. In the substrate 11 , the entire area outside the first wiring 121 and the second wiring 122 is covered with the frame 35 , so that the deterioration range of the substrate 11 is reduced. It is possible to reduce the possibility of peeling off from the substrate 11 .
 また、枠体35は、第1配線121及び第2配線122の外周に接する。枠体3が第1配線121及び第2配線122の外周に接することにより、枠体35が発光素子14から枠体35の接続部153までの距離が小さくなり、発光素子14から側方に出射された光が接続部153に到達するまでの減衰量が小さくなるため、発光装置3は、光の取出し効率をより向上させることを可能とする。 In addition, the frame 35 is in contact with the outer peripheries of the first wiring 121 and the second wiring 122 . Since the frame 3 is in contact with the outer periphery of the first wiring 121 and the second wiring 122, the distance from the light emitting element 14 to the connection portion 153 of the frame 35 is reduced, and the light is emitted sideways from the light emitting element 14. Since the amount of attenuation of the emitted light before it reaches the connecting portion 153 is small, the light emitting device 3 can further improve the light extraction efficiency.
 図20は第4実施形態に係る発光装置4の断面図である。図20は、図19と同様の断面における断面図である。発光装置4は、枠体15に代えて枠体45を有する点で発光装置1と相違する。 FIG. 20 is a cross-sectional view of the light emitting device 4 according to the fourth embodiment. 20 is a cross-sectional view in the same cross-section as FIG. 19. FIG. The light-emitting device 4 differs from the light-emitting device 1 in that it has a frame 45 instead of the frame 15 .
 枠体45は、第1配線121及び第2配線122の外周部を被覆するように配置される点で枠体15と相違する。すなわち、枠体45は、枠体35と同様に基板11の第1配線121及び第2配線122より外側の領域の全部を被覆するとともに、第1配線121及び第2配線122の外周部をさらに被覆する。 The frame 45 is different from the frame 15 in that it is arranged so as to cover the outer peripheral portions of the first wiring 121 and the second wiring 122 . That is, like the frame 35, the frame 45 covers the entire region outside the first wiring 121 and the second wiring 122 of the substrate 11, and further covers the outer peripheral portions of the first wiring 121 and the second wiring 122. cover.
 第1配線121及び第2配線122は銀によって形成され、発光素子14からの光を反射して発光装置1の外部に出射される。硫化ガスは樹脂を透過する性質があるため、硫化ガスが存在する環境で発光装置が使用される場合、硫化ガスは樹脂である封止材16を透過して第1配線121及び第2配線122と反応して、第1配線121及び第2配線122を劣化させる。第1配線121及び第2配線122が劣化することにより、発光素子14からの光の第1配線121及び第2配線122における反射率が低下し、光の取出し効率が低下する場合がある。 The first wiring 121 and the second wiring 122 are made of silver, reflect the light from the light emitting element 14 and emit it to the outside of the light emitting device 1 . Since the sulfide gas has a property of permeating resin, when the light emitting device is used in an environment where the sulfide gas exists, the sulfide gas passes through the sealing material 16 made of resin to form the first wiring 121 and the second wiring 122 . and degrades the first wiring 121 and the second wiring 122 . When the first wiring 121 and the second wiring 122 deteriorate, the reflectance of the light from the light emitting element 14 on the first wiring 121 and the second wiring 122 may be lowered, and the light extraction efficiency may be lowered.
 発光装置4において、枠体45が第1配線121及び第2配線122の外周部を被覆することにより、第1配線121及び第2配線122の外周部に到達した光は硫化ガスの影響を受けない枠体45で反射される。第1配線121及び第2配線122の外周部に到達した光が枠体45で反射することにより、発光装置4は、硫化ガスの影響による光の取出し効率の低下の度合いを抑えることを可能とする。光の取出し効率が低下する度合いをより抑えるために、枠体45は、第1配線121及び第2配線122の外周から100μmの範囲を被覆するように形成されることが好ましい。 In the light emitting device 4, the frame 45 covers the outer circumferences of the first wiring 121 and the second wiring 122, so that the light reaching the outer circumferences of the first wiring 121 and the second wiring 122 is affected by the sulfide gas. It is reflected by the frame 45 which is not there. Light that has reached the outer peripheral portions of the first wiring 121 and the second wiring 122 is reflected by the frame 45, so that the light emitting device 4 can suppress the degree of deterioration in light extraction efficiency due to the influence of the sulfide gas. do. The frame 45 is preferably formed so as to cover a range of 100 μm from the outer peripheries of the first wiring 121 and the second wiring 122 in order to further suppress the deterioration of the light extraction efficiency.
 図21は第5実施形態に係る発光装置5の平面図であり、図22は発光装置5の断面図である。図22は、図21のXXII-XXII線に沿う断面図である。発光装置5は、枠体15に代えて枠体55を有する点で発光装置1と相違する。 21 is a plan view of the light emitting device 5 according to the fifth embodiment, and FIG. 22 is a cross-sectional view of the light emitting device 5. FIG. 22 is a cross-sectional view taken along line XXII--XXII of FIG. 21. FIG. The light-emitting device 5 differs from the light-emitting device 1 in that it has a frame 55 instead of the frame 15 .
 枠体55は、第1枠部551と、第1枠部551の上部に接続する第2枠部552と、第2枠部552の上部に接続する第3枠部553とを有する。第1枠部551は、発光素子14側に突出する第1内周曲面を有し、第2枠部552は、発光素子14側に突出する第2内周曲面を有し、第3枠部553は、発光素子14側に突出する第3内周曲面を有する。第3枠部553は、第1枠部551及び第2枠部552よりも厚く形成され、第2枠部552の上面を被覆するとともに、第1枠部551及び第2枠部552の外周面を被覆する。 The frame body 55 has a first frame portion 551 , a second frame portion 552 connected to the upper portion of the first frame portion 551 , and a third frame portion 553 connected to the upper portion of the second frame portion 552 . The first frame portion 551 has a first inner curved surface protruding toward the light emitting element 14 side, the second frame portion 552 has a second inner curved surface protruding toward the light emitting element 14 side, and a third frame portion. 553 has a third inner curved surface protruding toward the light emitting element 14 side. The third frame portion 553 is formed thicker than the first frame portion 551 and the second frame portion 552, covers the upper surface of the second frame portion 552, and also covers the outer peripheral surfaces of the first frame portion 551 and the second frame portion 552. to cover.
 第1枠部551と第2枠部552との接続部554において、第1枠部551は上方に凸の断面形状を有し、第2枠部552は下方に凸の断面形状を有する。第1枠部551は上方に凸の断面形状を有し且つ第2枠部552は下方に凸の断面形状を有することにより、発光素子14から側方に照射された光が接続部554において上方に反射されるため、発光装置5は、光の取出し効率を向上させることを可能とする。 At the connecting portion 554 between the first frame portion 551 and the second frame portion 552, the first frame portion 551 has an upwardly convex cross-sectional shape, and the second frame portion 552 has a downwardly convex cross-sectional shape. The first frame portion 551 has an upwardly convex cross-sectional shape and the second frame portion 552 has a downwardly convex cross-sectional shape. , the light emitting device 5 makes it possible to improve the light extraction efficiency.
 同様に、第2枠部552と第3枠部553との接続部555において、第2枠部552は上方に凸の断面形状を有し、第3枠部553は下方に凸の断面形状を有する。第1枠部551は上方に凸の断面形状を有し且つ第2枠部552は下方に凸の断面形状を有することにより、発光素子14から側方に照射された光が接続部555において上方に反射されるため、発光装置1は、光の取出し効率を向上させることを可能とする。 Similarly, at a connection portion 555 between the second frame portion 552 and the third frame portion 553, the second frame portion 552 has an upwardly convex cross-sectional shape, and the third frame portion 553 has a downwardly convex cross-sectional shape. have. The first frame portion 551 has an upwardly convex cross-sectional shape and the second frame portion 552 has a downwardly convex cross-sectional shape. Therefore, the light emitting device 1 can improve the light extraction efficiency.
 また、第2枠部552と第3枠部553との接続部555は、発光素子14の上面141と同一の高さに位置する。接続部555を発光素子14の上面141と同一の高さに位置させることにより、発光素子14から側方に出射される光の多くが一回の反射で発光装置1の外部に出射されるため、光の取出し効率がより向上する。なお、接続部555に代えて、第1枠部551と第2枠部552との接続部554が発光素子14の上面141と同一の高さに配置されてもよい。 In addition, the connecting portion 555 between the second frame portion 552 and the third frame portion 553 is positioned at the same height as the top surface 141 of the light emitting element 14 . By positioning the connection portion 555 at the same height as the upper surface 141 of the light emitting element 14, most of the light emitted sideways from the light emitting element 14 is emitted to the outside of the light emitting device 1 by one reflection. , the light extraction efficiency is further improved. Instead of the connecting portion 555 , the connecting portion 554 between the first frame portion 551 and the second frame portion 552 may be arranged at the same height as the upper surface 141 of the light emitting element 14 .
 なお、第1枠部551と第2枠部552との接続部554において、第1枠部551及び第2枠部552が平面状に形成されてもよい。すなわち、接続部554において、V字形状又は鋸歯状の溝が形成されてもよい。この場合も、発光素子14から側方に照射された光が接続部554において上方に反射されるため、発光装置5は、光の取出し効率を向上させることを可能とする。また、同様に、第2枠部552と第3枠部553との接続部555において、V字形状又は鋸歯状の溝が形成されてもよい。 It should be noted that the first frame portion 551 and the second frame portion 552 may be formed flat at the connecting portion 554 between the first frame portion 551 and the second frame portion 552 . That is, V-shaped or sawtooth-shaped grooves may be formed in the connecting portion 554 . In this case also, the light emitted sideways from the light emitting element 14 is reflected upward at the connecting portion 554, so that the light emitting device 5 can improve the light extraction efficiency. Similarly, a V-shaped or sawtooth-shaped groove may be formed at the connecting portion 555 between the second frame portion 552 and the third frame portion 553 .
 図23は第6実施形態に係る発光装置6の平面図であり、図24は発光装置6の断面図である。図24は、図22のXXIV-XXIV線に沿う断面図である。発光装置6は、基板11に代えて基板61を有し、枠体15に代えて枠体65を有する点で発光装置1と相違する。 23 is a plan view of the light emitting device 6 according to the sixth embodiment, and FIG. 24 is a cross-sectional view of the light emitting device 6. FIG. 24 is a cross-sectional view taken along line XXIV--XXIV of FIG. 22. FIG. The light emitting device 6 differs from the light emitting device 1 in that it has a substrate 61 instead of the substrate 11 and a frame 65 instead of the frame 15 .
 基板61は、上面の外周部に複数の凹部611(図23では、破線により図示)を有する点で基板11と相違する。複数の凹部611は、矩形状の基板61の対向する一対の辺に沿って設けられる。枠体65は、下面の外周部に複数の凸部654を有する点で枠体15と相違する。複数の凸部654は、それぞれ凹部611と対応する位置及び形状に設けられる。枠体65は、凸部654が凹部611に嵌合することによって基板61に固定される。枠体65が基板61に固定されることにより、上述したように基板61を形成する樹脂が劣化(スス化)したとしても、枠体65が基板61から剥離される可能性が低減される。 The substrate 61 differs from the substrate 11 in that it has a plurality of recesses 611 (indicated by broken lines in FIG. 23) on the outer periphery of the upper surface. A plurality of recesses 611 are provided along a pair of opposing sides of the rectangular substrate 61 . The frame 65 differs from the frame 15 in that it has a plurality of protrusions 654 on the outer circumference of the lower surface. The plurality of protrusions 654 are provided at positions and shapes corresponding to the recesses 611 respectively. The frame 65 is fixed to the substrate 61 by fitting the protrusions 654 into the recesses 611 . By fixing the frame 65 to the substrate 61 , even if the resin forming the substrate 61 deteriorates (stains) as described above, the possibility of the frame 65 peeling off from the substrate 61 is reduced.
 上述した説明では、凹部611は矩形状の基板61の対向する一対の辺に沿って設けられるものとしたが、このような例に限られず、凹部611は基板61の各辺に沿って設けられてもよく、何れか一つの辺のみに沿って設けられてもよい。また、上述した説明では、複数の凹部611が辺に沿って設けられるものとしたが、このような例に限られず、一つの辺の一端から他端に向かって延伸する一つの凹部611のみが設けられてもよい。 In the above description, the recesses 611 are provided along a pair of opposing sides of the rectangular substrate 61 , but the present invention is not limited to this example, and the recesses 611 are provided along each side of the substrate 61 . may be provided along only one side. Further, in the above description, a plurality of recesses 611 are provided along the side, but the present invention is not limited to such an example, and only one recess 611 extending from one end to the other end of one side is provided. may be provided.
 図25は第7実施形態に係る発光装置7の平面図であり、図26は発光装置7の断面図である。図26は、図25のXXVI-XXVI線に沿う断面図である。発光装置7は、基板11に代えて基板71を有し、枠体15に代えて枠体75を有する点で発光装置1と相違する。 25 is a plan view of the light emitting device 7 according to the seventh embodiment, and FIG. 26 is a cross-sectional view of the light emitting device 7. FIG. 26 is a cross-sectional view taken along line XXVI--XXVI of FIG. 25. FIG. The light emitting device 7 differs from the light emitting device 1 in that it has a substrate 71 instead of the substrate 11 and a frame 75 instead of the frame 15 .
 基板71は、上面に複数の凹部711(図25では、矩形の破線により図示)を有する点で基板11と相違する。複数の凹部711は、矩形状の基板71の対向する一対の辺に沿って延伸し、且つ、枠体75の内周に沿って設けられる。枠体75は、下面の内周部に複数の凸部754を有する点で枠体15と相違する。複数の凸部754は、それぞれ凹部711と対応する位置及び形状に設けられる。枠体75は、凸部754が凹部711に嵌合することによって基板71に固定される。凸部754を凹部711に嵌合することによって枠体75を基板71に固定することにより、発光装置6と同様に、基板71を形成する樹脂が劣化(スス化)したとしても、枠体75が基板71から剥離される可能性が低減される。また、凸部754が枠体75の内周に沿って設けられることにより、発光素子14から下方に出射されて基板71を透過した光が凸部754において反射され、発光装置7の側面から外部に漏出することが無くなる。 The substrate 71 differs from the substrate 11 in that it has a plurality of recesses 711 (indicated by rectangular dashed lines in FIG. 25) on its upper surface. The plurality of recesses 711 extends along a pair of opposing sides of the rectangular substrate 71 and is provided along the inner periphery of the frame 75 . The frame 75 differs from the frame 15 in that it has a plurality of projections 754 on the inner periphery of the lower surface. The plurality of protrusions 754 are provided at positions and shapes corresponding to the recesses 711 respectively. The frame 75 is fixed to the substrate 71 by fitting the projections 754 into the recesses 711 . By fixing the frame 75 to the substrate 71 by fitting the projections 754 into the recesses 711, even if the resin forming the substrate 71 deteriorates (soots), the frame 75 can be removed, as in the case of the light emitting device 6. is detached from the substrate 71 is reduced. In addition, since the convex portion 754 is provided along the inner circumference of the frame 75 , the light emitted downward from the light emitting element 14 and transmitted through the substrate 71 is reflected by the convex portion 754 and is emitted from the side surface of the light emitting device 7 to the outside. will no longer leak into the
 上述した説明では、凹部711は矩形状の基板61の対向する一対の辺に沿って設けられるものとしたが、このような例に限られず、凹部711は基板71の各辺に沿って設けられてもよく、何れか一つの辺のみに沿って設けられてもよい。また、上述した説明では、凹部711が辺に沿って延伸して設けられるものとしたが、このような例に限られず、辺に沿って複数の凹部711が設けられてもよい。 In the above description, the recesses 711 are provided along a pair of opposing sides of the rectangular substrate 61 , but the present invention is not limited to this example, and the recesses 711 are provided along each side of the substrate 71 . may be provided along only one side. Further, in the above description, the concave portion 711 is provided extending along the side, but the present invention is not limited to such an example, and a plurality of concave portions 711 may be provided along the side.
 図27は第8実施形態に係る発光装置8の平面図であり、図28は発光装置8の断面図であり(その1)、図29は発光装置8の断面図である(その2)。図28は図27のXXVIII-XXVIII線に沿う断面図であり、図29は図21のXXIX-XXIX線に沿う断面図である。発光装置8は、枠体15に代えて枠体85を有する点で発光装置1と相違する。 27 is a plan view of the light emitting device 8 according to the eighth embodiment, FIG. 28 is a cross-sectional view of the light emitting device 8 (No. 1), and FIG. 29 is a cross-sectional view of the light emitting device 8 (No. 2). 28 is a cross-sectional view along line XXVIII--XXVIII of FIG. 27, and FIG. 29 is a cross-sectional view along line XXIX--XXIX of FIG. The light-emitting device 8 differs from the light-emitting device 1 in that it has a frame 85 instead of the frame 15 .
 枠体85は、発光素子14側に突出した第1内周曲面を有する第1枠部851と、第1枠部851の上部に接続し、発光素子14側に突出した第2内周曲面を有する第2枠部852とを有する。枠体85は、枠体15と同様に、第1枠部851の上に第2枠部852が積み重ねられた形状を有する。第1枠部851と第2枠部852との接続部853は、発光素子14の上面141と同一の高さとなるように配置されている。第1内周曲面及び第2内周曲面は、それぞれが上方に凸となる断面形状を有している。 The frame body 85 includes a first frame portion 851 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 851 and protruding toward the light emitting element 14 side. and a second frame portion 852 . Like the frame 15 , the frame 85 has a shape in which the second frame 852 is stacked on the first frame 851 . A connecting portion 853 between the first frame portion 851 and the second frame portion 852 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 . The first inner curved surface and the second inner curved surface each have an upwardly convex cross-sectional shape.
 第1枠部851及び第2枠部852は、基板11の長手方向の両端に配置される部分の幅が基板11の短手方向の両端に配置される部分の幅よりも広くなるように形成される。第1枠部851及び第2枠部852は、基板11の長手方向の両端の幅が基板11の短手方向の両端の幅よりも広いので、基板11の長手方向の両端に配置される枠体85の幅は、基板11の短手方向の両端に配置される枠体85の幅より広い。 The first frame portion 851 and the second frame portion 852 are formed so that the width of the portions arranged at both ends in the longitudinal direction of the substrate 11 is wider than the width of the portions arranged at both ends in the width direction of the substrate 11. be done. The first frame portion 851 and the second frame portion 852 are arranged at both ends of the substrate 11 in the longitudinal direction because the width of both ends of the substrate 11 in the longitudinal direction is wider than the width of both ends of the substrate 11 in the lateral direction. The width of the body 85 is wider than the width of the frames 85 arranged at both ends of the substrate 11 in the short direction.
 長手方向に配置される第2枠部852の対向する第2内周曲面の上端との間の距離DLは、短手方向に配置される第2枠部852の対向する第2内周曲面の上端との間の距離DSと同一である。距離DLと距離DSとの差が距離DLの±10%以下であるとき、距離DLが距離DSと同一であるとされる。距離DLが距離DSと同一なので、第2枠部852の第2内周曲面の上端に端部が接するように配置される封止材16の上面を平面視したときの形状は、正方形である。封止材16の上面、すなわち発光装置8の発光面の平面形状は、正方形である。 The distance DL between the upper end of the second inner peripheral curved surface of the second frame portion 852 arranged in the longitudinal direction and the upper end of the second inner peripheral curved surface of the second frame portion 852 arranged in the lateral direction is It is the same as the distance DS between the top edges. When the difference between the distance DL and the distance DS is ±10% or less of the distance DL, the distance DL is considered to be the same as the distance DS. Since the distance DL is the same as the distance DS, the shape of the upper surface of the sealing member 16, which is arranged so that the end portion is in contact with the upper end of the second inner peripheral curved surface of the second frame portion 852, is square when viewed from above. . The planar shape of the upper surface of the encapsulant 16, that is, the light emitting surface of the light emitting device 8 is square.
 発光装置8は、発光面が方形状の平面形状を有するので、長手方向及び短手方向に延伸する辺を有する矩形の基板11の長手方向及び短手方向に同一の指向性を有する点光源として機能することができる。枠体85は、第1配線121とボンディングワイヤ17とを接合する接合部、及び第2配線122とボンディングワイヤ18を接合する接合部を覆いことで保護する。また、枠体85は、貫通孔の上方に配置される第1配線121及び第2配線122を覆うように配置される。貫通孔の上方に配置される第1配線121及び第2配線122は、第1配線121及び第2配線122の他の部分よりも凹む凹部となることがある。発光装置8では、枠体85が貫通孔の上方に形成される第1配線121及び第2配線122の凹部を覆うように配置されるので、第1配線121及び第2配線122に形成される凹部に蛍光体が沈殿することが防止される。発光装置8では、第1配線121及び第2配線122に形成される凹部に蛍光体が沈殿しないので、凹部に沈殿した蛍光体から黄色光が出射されることにより色ムラが生じることを防止できる。また、発光装置8では、枠体85が第1配線121及び第2配線122に形成される凹部を覆うように配置されるので、凹部に気泡が発生した場合でも光学特性が低下するおそれは低い。 Since the light emitting surface of the light emitting device 8 has a rectangular planar shape, the light emitting device 8 functions as a point light source having the same directivity in the longitudinal direction and the lateral direction of the rectangular substrate 11 having sides extending in the longitudinal direction and the lateral direction. can function. The frame body 85 covers and protects the joint portion where the first wiring 121 and the bonding wire 17 are joined and the joint portion where the second wiring 122 and the bonding wire 18 are joined. Further, the frame 85 is arranged so as to cover the first wiring 121 and the second wiring 122 arranged above the through-hole. The first wiring 121 and the second wiring 122 arranged above the through-hole may be recessed more than other portions of the first wiring 121 and the second wiring 122 . In the light-emitting device 8, the frame 85 is arranged so as to cover the concave portions of the first wiring 121 and the second wiring 122 formed above the through holes. Phosphors are prevented from precipitating in the recesses. In the light-emitting device 8, since the phosphor does not precipitate in the recesses formed in the first wiring 121 and the second wiring 122, it is possible to prevent color unevenness caused by yellow light emitted from the phosphor deposited in the recesses. . In addition, in the light emitting device 8, the frame 85 is arranged so as to cover the concave portions formed in the first wiring 121 and the second wiring 122. Therefore, even if air bubbles are generated in the concave portions, the optical characteristics are unlikely to deteriorate. .
 図30は第9実施形態に係る発光装置9の平面図であり、図31は発光装置9の断面図であり(その1)、図32は発光装置9の断面図である(その2)。図31は図30のXXXI-XXXI線に沿う断面図であり、図32は図30のXXXII-XXXII線に沿う断面図である。発光装置9は、枠体85に代えて枠体95を有する点で発光装置8と相違する。 30 is a plan view of the light emitting device 9 according to the ninth embodiment, FIG. 31 is a cross-sectional view of the light emitting device 9 (No. 1), and FIG. 32 is a cross-sectional view of the light emitting device 9 (No. 2). 31 is a cross-sectional view along line XXXI--XXXI of FIG. 30, and FIG. 32 is a cross-sectional view along line XXXII--XXXII of FIG. The light emitting device 9 differs from the light emitting device 8 in that it has a frame 95 instead of the frame 85 .
 枠体95は、発光素子14側に突出した第1内周曲面を有する第1枠部951と、第1枠部951の上部に接続し、発光素子14側に突出した第2内周曲面を有する第2枠部952とを有する。枠体95は、枠体85と同様に、第1枠部951の上に第2枠部952が積み重ねられた形状を有する。第1枠部951と第2枠部952との接続部953は、発光素子14の上面141と同一の高さとなるように配置されている。第1内周曲面及び第2内周曲面は、それぞれが上方に凸となる断面形状を有している。 The frame body 95 includes a first frame portion 951 having a first inner curved surface protruding toward the light emitting element 14 side, and a second inner curved surface connected to the upper portion of the first frame portion 951 and protruding toward the light emitting element 14 side. and a second frame portion 952 . Like the frame 85 , the frame 95 has a shape in which the second frame 952 is stacked on the first frame 951 . A connection portion 953 between the first frame portion 951 and the second frame portion 952 is arranged so as to have the same height as the upper surface 141 of the light emitting element 14 . The first inner curved surface and the second inner curved surface each have an upwardly convex cross-sectional shape.
 第1枠部951及び第2枠部952は、第1枠部851及び第2枠部852と同様に、基板11の長手方向の両端に配置される部分の幅が基板11の短手方向の両端に配置される部分の幅よりも広くなるように形成される。第1枠部951及び第2枠部952は、基板11の長手方向の両端の幅が基板11の短手方向の両端の幅よりも広いので、基板11の長手方向の両端に配置される枠体95の幅は、基板11の短手方向の両端に配置される枠体95の幅より広い。 As with the first frame portion 851 and the second frame portion 852 , the first frame portion 951 and the second frame portion 952 are arranged at both ends in the longitudinal direction of the substrate 11 so that the width of the portion is equal to the width of the substrate 11 in the lateral direction. It is formed so as to be wider than the width of the portions arranged at both ends. Since the width of both ends of the substrate 11 in the longitudinal direction is wider than the width of both ends of the substrate 11 in the lateral direction, the first frame portion 951 and the second frame portion 952 are arranged at both ends of the substrate 11 in the longitudinal direction. The width of the body 95 is wider than the width of the frame 95 arranged at both ends of the substrate 11 in the short direction.
 長手方向に配置される第2枠部952の対向する第2内周曲面の上端との間の距離DLは、第1枠部851及び第2枠部852と同様に、短手方向に配置される第2枠部952の対向する第2内周曲面の上端との間の距離DSと同一である。距離DLが距離DSと同一なので、第2枠部952の第2内周曲面の上端に端部が接するように配置される封止材16の上面を平面視したときの形状は、正方形である。封止材16の上面、すなわち発光装置9の発光面の平面形状は、発光装置8の発光面の平面形状と同様に正方形である。 The distance DL between the upper end of the second inner peripheral curved surface facing the second frame portion 952 arranged in the longitudinal direction is arranged in the lateral direction, similarly to the first frame portion 851 and the second frame portion 852. is the same as the distance DS between the upper ends of the second inner peripheral curved surfaces of the second frame portion 952 facing each other. Since the distance DL is the same as the distance DS, the shape of the upper surface of the sealing material 16, which is arranged so that the end portion is in contact with the upper end of the second inner peripheral curved surface of the second frame portion 952, is square when viewed from above. . The planar shape of the upper surface of the sealing material 16 , that is, the light emitting surface of the light emitting device 9 is square like the planar shape of the light emitting surface of the light emitting device 8 .
 しかしながら、長手方向に配置される第1枠部951の先端と発光素子14との間の離隔距離DL1は、短手方向に配置される第1枠部951の先端と発光素子14との間の離隔距離DS1よりも長い。短手方向に配置される第1枠部951は、基板11の端部と発光素子14の間の距離が比較的近く且つ基板11の表面が平坦であるため、第1枠部951の先端と発光素子14との間の離隔距離の制御が容易である。一方、長手方向に配置される第1枠部951は、基板11の端部と発光素子14の間の距離が比較的遠く且つ基板11の表面に凹凸が形成されるため、第1枠部951の先端と発光素子14との間の離隔距離の制御が容易ではない。 However, the distance DL1 between the tip of the first frame portion 951 arranged in the longitudinal direction and the light emitting element 14 is the distance between the tip of the first frame portion 951 arranged in the lateral direction and the light emitting element 14. longer than the separation distance DS1. Since the distance between the edge of the substrate 11 and the light emitting element 14 is relatively short and the surface of the substrate 11 is flat, the first frame portion 951 arranged in the lateral direction does not It is easy to control the separation distance from the light emitting element 14 . On the other hand, in the first frame portion 951 arranged in the longitudinal direction, the distance between the end portion of the substrate 11 and the light emitting element 14 is relatively long and the surface of the substrate 11 is uneven. It is not easy to control the distance between the tip of the light emitting element 14 and the light emitting element 14 .
 発光装置9では、長手方向に配置される第1枠部951を短手方向に配置される第1枠部951よりも発光素子14から離隔して配置することで、第1枠部951が発光素子14に接触して発光装置9の発光効率が低下するおそれを低くすることができる。 In the light emitting device 9, the first frame portion 951 arranged in the longitudinal direction is arranged further away from the light emitting element 14 than the first frame portion 951 arranged in the lateral direction, so that the first frame portion 951 emits light. It is possible to reduce the risk of lowering the luminous efficiency of the light emitting device 9 due to contact with the element 14 .
 また、発光装置9では、長手方向に配置される第1枠部951を短手方向に配置される第1枠部951よりも発光素子14から離隔して配置することで、長手方向の指向性を短手方向の指向性と相違させることができる。 In addition, in the light emitting device 9, by arranging the first frame portion 951 arranged in the longitudinal direction further away from the light emitting element 14 than the first frame portion 951 arranged in the lateral direction, the directivity in the longitudinal direction is reduced. can be made different from the directivity in the lateral direction.
 発光装置9では、長手方向に配置される第1枠部951を短手方向に配置される第1枠部951よりも発光素子14から離隔して配置させるが、実施形態に係る発光装置では、発光素子の四方と第1枠部との間の離隔距離を互いに相違させて配置してもよい。発光素子の四方と第1枠部との間の離隔距離を互いに相違させて配置することで、出射光の指向性のピーク位置を発光素子14の頂上から変位させることができる。 In the light emitting device 9, the first frame portion 951 arranged in the longitudinal direction is arranged further away from the light emitting element 14 than the first frame portion 951 arranged in the lateral direction. The separation distances between the four sides of the light emitting element and the first frame may be different from each other. The directivity peak position of the emitted light can be displaced from the top of the light emitting element 14 by arranging the four sides of the light emitting element and the first frame portion with different separation distances.
 また、実施形態に係る発光装置では、短手方向において、基板の端部と第1枠部の先端との間の離隔距離は、第1枠部の先端と発光素子の端部との間の離隔距離よりも長いことが好ましい。実施形態に係る発光装置では、短手方向において、対向する一対の第1枠部の先端と基板の端部との間の離隔距離を加算した長さは、対向する一対の第1枠部の先端と発光素子の端部との間の離隔距離を加算した長さよりも長いことがさらに好ましい。また、実施形態に係る発光装置では、短手方向において、基板の端部と第1枠部の先端との間の離隔距離は、基板の端部と第2枠部の先端との間の離隔距離の2倍以下であることが好ましい。 Further, in the light emitting device according to the embodiment, the separation distance between the edge of the substrate and the tip of the first frame in the lateral direction is equal to the distance between the tip of the first frame and the edge of the light emitting element. It is preferably longer than the separation distance. In the light emitting device according to the embodiment, the length obtained by adding the separation distance between the ends of the pair of first frame portions facing each other and the end portion of the substrate in the short direction is the length of the pair of first frame portions facing each other. More preferably, it is longer than the sum of the distance between the tip and the edge of the light emitting element. Further, in the light emitting device according to the embodiment, the separation distance between the edge of the substrate and the tip of the first frame in the lateral direction is the same as the separation between the edge of the substrate and the tip of the second frame. It is preferably less than twice the distance.
 図33は、実施形態に係る発光装置における短手方向の好ましい配置を説明するための図である。図33は、図3に対応する断面図である。 FIG. 33 is a diagram for explaining a preferable layout in the short direction of the light emitting device according to the embodiment. FIG. 33 is a cross-sectional view corresponding to FIG.
 実施形態に係る発光装置では、基板11の端部と第1枠部151の先端との間の離隔距離W1Lは、第1枠部151の先端と発光素子14の端部との間の離隔距離(WD-W1L)よりも長いことが好ましい。また、実施形態に係る発光装置では、基板11の端部と第1枠部151の先端との間の離隔距離W1Rは、第1枠部151の先端と発光素子14の端部との間の離隔距離(WD-W1R)よりも長いことが好ましい。 In the light emitting device according to the embodiment, the separation distance W1L between the edge of the substrate 11 and the tip of the first frame 151 is the separation distance between the tip of the first frame 151 and the edge of the light emitting element 14. It is preferably longer than (WD-W1L). Further, in the light emitting device according to the embodiment, the separation distance W1R between the edge of the substrate 11 and the tip of the first frame 151 is equal to the distance between the tip of the first frame 151 and the edge of the light emitting element 14 It is preferably longer than the separation distance (WD-W1R).
 実施形態に係る発光装置では、対向する一対の第1枠部151の先端と基板11の端部との間の離隔距離を加算した長さは、対向する一対の第1枠部151の先端と発光素子14の端部との間の離隔距離を加算した長さよりも長いことがさらに好ましい。一対の第1枠部151の先端と基板11の端部との間の離隔距離を加算した長さは(W1L+W1R)で示され、一対の第1枠部151の先端と発光素子14の端部との間の離隔距離を加算した長さは(2×WD-(W1L+W1R))で示されるので、
 (W1L+W1R)≧(2×WD-(W1L+W1R))   (1)
 との関係が成り立つ。式(1)の左辺の(2×WD)は、基板11の短手方向の長さ(WS)及び発光素子14の幅(WE)から(WS-WD)で示されるので、式(1)は、
 (W1L+W1R)≧((WS-WD)-(W1L+W1R))   (2)
 となり、基板11の短手方向の長さ(WS)、発光素子14の幅(WE)、及び一対の第1枠部151の先端と基板11の端部との間の離隔距離を加算した長さ(W1L+W1R)は、
 2≧(WS-WD)/(W1L+W1R)
 との関係を有する。
In the light emitting device according to the embodiment, the length obtained by adding the separation distance between the ends of the pair of first frame portions 151 facing each other and the end portion of the substrate 11 is More preferably, it is longer than the sum of the separation distance from the edge of the light emitting element 14 . The length obtained by adding the separation distance between the tip of the pair of first frame portions 151 and the edge of the substrate 11 is represented by (W1L+W1R), and the tip of the pair of first frame portions 151 and the edge of the light emitting element 14 Since the length obtained by adding the distance between
(W1L+W1R)≧(2×WD-(W1L+W1R)) (1)
relationship is established. Since (2×WD) on the left side of equation (1) is expressed by (WS-WD) from the length (WS) of the substrate 11 in the lateral direction and the width (WE) of the light emitting element 14, equation (1) teeth,
(W1L+W1R)≧((WS-WD)-(W1L+W1R)) (2)
, the length obtained by adding the width (WS) of the substrate 11 in the lateral direction, the width (WE) of the light emitting element 14, and the separation distance between the tip of the pair of first frame portions 151 and the edge of the substrate 11 (W1L+W1R) is
2≧(WS−WD)/(W1L+W1R)
have a relationship with
 実施形態に係る発光装置では、短手方向において、基板11の端部と第1枠部151の先端との間の離隔距離W1Lは、基板11の端部と第2枠部152の先端との間の離隔距離W2Lの2倍以下であることが好ましい。また、実施形態に係る発光装置では、短手方向において、基板11の端部と第1枠部151の先端との間の離隔距離W1Rは、基板11の端部と第2枠部152の先端との間の離隔距離W2Rの2倍以下であることが好ましい。例えば、発光素子14の幅(WE)が、基板11の短手方向の長さ(WS)の2倍以上となる、WS≦2×WE、つまり、WDが小さくなるとき、発光素子14の両端において、発光素子14から側方に向かう光が、第1枠部151から透過することを抑制し、発光装置1の出射光の量を維持することができると共に、光の指向性を狭くすることができる。 In the light emitting device according to the embodiment, the separation distance W1L between the edge of the substrate 11 and the tip of the first frame 151 in the lateral direction is the distance between the edge of the substrate 11 and the tip of the second frame 152. It is preferable that the separation distance W2L between them is two times or less. Further, in the light emitting device according to the embodiment, the separation distance W1R between the edge of the substrate 11 and the tip of the first frame 151 in the lateral direction is It is preferably less than twice the separation distance W2R between. For example, when the width (WE) of the light emitting element 14 is twice or more the length (WS) of the substrate 11 in the lateral direction, WS≦2×WE, that is, when WD becomes smaller, both ends of the light emitting element 14 3, the light directed to the side from the light emitting element 14 can be suppressed from being transmitted through the first frame portion 151, the amount of light emitted from the light emitting device 1 can be maintained, and the directivity of the light can be narrowed. can be done.
 図34(a)~34(g)は、第1枠部151の先端と発光素子14の端部との間の離隔距離を変化させたときの指向性を示す図である。図34(a)~34(g)において、横軸は角度を示し、縦軸は放射強度を示す。図34(a)~34(g)に示すシミュレーションは、Synopsys社製のLightToolsをシミュレータとして使用して実行された。図34(a)は第1枠部151の先端と発光素子14の端部との間の離隔距離が80μmであるときの指向性を示し、図34(b)は第1枠部151の先端と発光素子14の端部との間の離隔距離が180μmであるときの指向性を示す。図34(c)は第1枠部151の先端と発光素子14の端部との間の離隔距離が280μmであるときの指向性を示し、図34(d)は第1枠部151の先端と発光素子14の端部との間の離隔距離が380μmであるときの指向性を示す。図34(e)は第1枠部151の先端と発光素子14の端部との間の離隔距離が480μmであるときの指向性を示し、図34(f)は第1枠部151の先端と発光素子14の端部との間の離隔距離が580μmであるときの指向性を示す。図34(g)は第1枠部151の先端と発光素子14の端部との間の離隔距離が680μmであるときの指向性を示す。 FIGS. 34(a) to 34(g) are diagrams showing the directivity when the separation distance between the tip of the first frame portion 151 and the end portion of the light emitting element 14 is changed. In FIGS. 34(a) to 34(g), the horizontal axis indicates the angle and the vertical axis indicates the radiation intensity. The simulations shown in FIGS. 34(a)-34(g) were performed using Synopsys' LightTools as a simulator. 34(a) shows the directivity when the separation distance between the tip of the first frame 151 and the end of the light emitting element 14 is 80 μm, and FIG. 34(b) shows the tip of the first frame 151. FIG. and the edge of the light emitting element 14 is 180 μm. 34(c) shows the directivity when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 280 μm, and FIG. 34(d) shows the tip of the first frame portion 151. and the edge of the light emitting element 14 is 380 μm. FIG. 34(e) shows the directivity when the separation distance between the tip of the first frame 151 and the end of the light emitting element 14 is 480 μm, and FIG. 34(f) shows the tip of the first frame 151. and the edge of the light emitting element 14 is 580 μm. FIG. 34(g) shows the directivity when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 680 μm.
 図34(a)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が80μmであるとき、放射強度は、角度が±25°のときに0°の放射強度の±1%の範囲であり、最大となる。また、放射強度は、角度が±35°のときに0°の放射強度の±5%の範囲であり、平坦な光の指向性が得られている。第1枠部151の先端と発光素子14の端部との間の離隔距離が80μmであるとき、放射強度の最大値は、0°の放射強度より1%増加する。図34(b)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が180μmであるとき、放射強度は、角度が±25°のときに0°の放射強度の±1%の範囲であり、最大となる。また、放射強度は、角度が±35°のときに0°の放射強度の±5%の範囲であり、平坦な光の指向性が得られている。第1枠部151の先端と発光素子14の端部との間の離隔距離が180μmであるとき、放射強度の最大値は、0°の放射強度より1%増加する。図34(c)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が80μmであるとき、放射強度は±25°のときに最大となる。また、放射強度は、角度が±40°のときに0°の放射強度の±5%の範囲であり、平坦な光の指向性が得られている。第1枠部151の先端と発光素子14の端部との間の離隔距離が280μmであるとき、放射強度の最大値は、0°の放射強度より4%増加する。 As shown in FIG. 34(a), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 80 μm, the radiation intensity is 0° when the angle is ±25°. is within ±1% of the radiant intensity of the maximum. Also, the radiation intensity is within ±5% of the radiation intensity at 0° when the angle is ±35°, and a flat directivity of light is obtained. When the distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 80 μm, the maximum radiation intensity increases by 1% from the radiation intensity at 0°. As shown in FIG. 34(b), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 180 μm, the radiant intensity is 0° when the angle is ±25°. is within ±1% of the radiant intensity of the maximum. Also, the radiation intensity is within ±5% of the radiation intensity at 0° when the angle is ±35°, and a flat directivity of light is obtained. When the separation distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 180 μm, the maximum radiation intensity increases by 1% from the radiation intensity at 0°. As shown in FIG. 34(c), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 80 μm, the radiation intensity is maximized at ±25°. Also, the radiation intensity is within ±5% of the radiation intensity at 0° when the angle is ±40°, and flat directivity of light is obtained. When the distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 280 μm, the maximum radiation intensity increases by 4% from the radiation intensity at 0°.
 図34(d)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が380μmであるとき、放射強度は±25から±30°のときに最大となる。第1枠部151の先端と発光素子14の端部との間の離隔距離が380μmであるとき、放射強度の最大値は、0°の放射強度より6%増加する。図34(e)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が480μmであるとき、放射強度は±30°のときに最大となる。第1枠部151の先端と発光素子14の端部との間の離隔距離が840μmであるとき、放射強度の最大値は、0°の放射強度より10%増加する。図34(f)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が580μmであるとき、放射強度は±35°のときに最大となる。第1枠部151の先端と発光素子14の端部との間の離隔距離が580μmであるとき、放射強度の最大値は、0°の放射強度より14%増加する。図34(g)に示すように、第1枠部151の先端と発光素子14の端部との間の離隔距離が680μmであるとき、放射強度は±35°のときに最大となる。第1枠部151の先端と発光素子14の端部との間の離隔距離が680μmであるとき、放射強度の最大値は、0°の放射強度より16%増加する。 As shown in FIG. 34(d), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 380 μm, the radiation intensity reaches its maximum at ±25° to ±30°. Become. When the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 380 μm, the maximum radiation intensity increases by 6% from the radiation intensity at 0°. As shown in FIG. 34(e), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 480 μm, the radiant intensity is maximized at ±30°. When the separation distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 840 μm, the maximum radiation intensity increases by 10% from the radiation intensity at 0°. As shown in FIG. 34(f), when the separation distance between the tip of the first frame portion 151 and the end of the light emitting element 14 is 580 μm, the radiant intensity is maximized at ±35°. When the separation distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 580 μm, the maximum radiation intensity increases by 14% from the radiation intensity at 0°. As shown in FIG. 34(g), when the separation distance between the tip of the first frame 151 and the end of the light emitting element 14 is 680 μm, the radiation intensity is maximized at ±35°. When the distance between the tip of the first frame portion 151 and the edge of the light emitting element 14 is 680 μm, the maximum radiation intensity increases by 16% from the radiation intensity at 0°.
 発光装置では、放射強度の最大値が0°の放射強度より5%以上増加すると、光出力としてばらつきを感じられるため、好ましくない。図34(a)~34(c)に示す実施例では、放射強度の最大値が0°の放射強度より%未満であり、良好な指向性を有する。一方、図34(d)~34(g)に示す比較例では、放射強度の最大値が0°の放射強度より%以上であり、良好な指向性を有さない。 In a light-emitting device, if the maximum radiant intensity increases by 5% or more from the radiant intensity at 0°, variations in light output can be perceived, which is not preferable. In the embodiment shown in FIGS. 34(a) to 34(c), the maximum radiant intensity is less than 5 % of the radiant intensity at 0° and has good directivity. On the other hand, in the comparative examples shown in FIGS. 34(d) to 34(g), the maximum radiation intensity is 5 % or more of the radiation intensity at 0°, and does not have good directivity.
 当業者は、本発明の精神および範囲から外れることなく、様々な変更、置換及び修正をこれに加えることが可能であることを理解されたい。例えば、上述した各部の処理は、本発明の範囲において、適宜に異なる順序で実行されてもよい。また、上述した実施形態及び変形例は、本発明の範囲において、適宜に組み合わせて実施されてもよい。 It should be understood that those skilled in the art can make various changes, substitutions and modifications to this without departing from the spirit and scope of the present invention. For example, the processing of each unit described above may be performed in a different order as appropriate within the scope of the present invention. Also, the above-described embodiments and modifications may be implemented in appropriate combinations within the scope of the present invention.

Claims (12)

  1.  基板と、
     前記基板の上面に配置された発光素子と、
     前記発光素子を囲むように前記基板の上面に配置され、前記発光素子からの光を反射する枠体と、
     前記枠体の内側に配置され、前記発光素子から出射された光の波長を変換した光を出射する蛍光体を含み、且つ、前記発光素子を封止する封止材と、を有し、
     前記枠体は、前記発光素子側に突出した第1内周曲面を有する第1枠部と、第2内周曲面を有する第2枠部と、を少なくとも有し、
     前記第1枠部と前記第2枠部との接続部は、前記発光素子の上面と同一の高さとなるように配置されている、
     ことを特徴とする発光装置。
    a substrate;
    a light emitting element disposed on the upper surface of the substrate;
    a frame disposed on the upper surface of the substrate so as to surround the light emitting element and reflecting light from the light emitting element;
    a sealing material disposed inside the frame, containing a phosphor that emits light obtained by converting the wavelength of light emitted from the light emitting element, and sealing the light emitting element,
    The frame has at least a first frame portion having a first inner peripheral curved surface protruding toward the light emitting element and a second frame portion having a second inner peripheral curved surface,
    The connecting portion between the first frame portion and the second frame portion is arranged so as to be at the same height as the upper surface of the light emitting element,
    A light-emitting device characterized by:
  2.  前記接続部における前記第1内周曲面の傾斜角は、前記接続部における前記第2の内周曲面の傾斜角よりも小さい、
     請求項1に記載の発光装置。
    The inclination angle of the first inner peripheral curved surface at the connecting portion is smaller than the inclination angle of the second inner peripheral curved surface at the connecting portion,
    A light-emitting device according to claim 1 .
  3.  前記接続部の前記基板の表面からの高さと前記発光素子の上面の前記基板の表面からの高さとの差は、前記発光素子の上面の前記基板の表面からの高さの±10%以下である、
     請求項1又は2に記載の発光装置。
    The difference between the height of the connection portion from the surface of the substrate and the height of the upper surface of the light emitting element from the surface of the substrate is ±10% or less of the height of the upper surface of the light emitting element from the surface of the substrate. be,
    The light-emitting device according to claim 1 or 2.
  4.  前記発光素子から前記接続部までの距離は、300μm以下である、
     請求項1-3の何れか一項に記載の発光装置。
    The distance from the light emitting element to the connection part is 300 μm or less,
    A light-emitting device according to any one of claims 1-3.
  5.  前記発光素子から前記接続部までの距離に対する、前記第2枠部の高さの比は、0.2以上且つ1.5以下である、
     請求項1-4の何れか一項に記載の発光装置。
    A ratio of the height of the second frame portion to the distance from the light emitting element to the connection portion is 0.2 or more and 1.5 or less.
    A light-emitting device according to any one of claims 1-4.
  6.  前記第2枠部は、前記第1枠部よりも厚く形成され、前記第1枠部の上部及び外周面を被覆する、
     請求項1-5の何れか一項に記載の発光装置。
    The second frame is formed thicker than the first frame and covers the upper part and the outer peripheral surface of the first frame.
    A light emitting device according to any one of claims 1-5.
  7.  前記第1枠部及び前記第2枠部は、樹脂及び酸化チタンを含み、
     前記第1枠部及び前記第2枠部において、前記樹脂を基準とする前記酸化チタンの含有量は30phr以上且つ130phr以下である、
     請求項1-6の何れか一項に記載の発光装置。
    The first frame and the second frame contain resin and titanium oxide,
    In the first frame portion and the second frame portion, the content of the titanium oxide based on the resin is 30 phr or more and 130 phr or less.
    A light emitting device according to any one of claims 1-6.
  8.  前記基板の上面において前記枠体に囲まれるように配置され、前記発光素子からの光を反射する導電性の配線パターンをさらに有し、
     前記発光素子は、前記配線パターンの上面に配置され、
     前記枠体は、前記配線パターンの外周部を被覆する、
     請求項1-7の何れか一項に記載の発光装置。
    further comprising a conductive wiring pattern disposed on the upper surface of the substrate so as to be surrounded by the frame and reflecting light from the light emitting element;
    The light emitting element is arranged on the upper surface of the wiring pattern,
    The frame covers the outer periphery of the wiring pattern,
    A light emitting device according to any one of claims 1-7.
  9.  前記基板は、矩形の平面形状を有すると共に、前記発光素子に電気的に接続される第1配線及び第2配線が前記基板の長手方向に沿って配列され、
     前記基板の長手方向の両端に配置される前記枠体の幅は、前記基板の短手方向の両端に配置される前記枠体の幅より広く、
     前記封止材の上面は、正方形状の平面形状を有する、
     請求項1-8の何れか一項に記載の発光装置。
    the substrate has a rectangular planar shape, and first wiring and second wiring electrically connected to the light emitting element are arranged along the longitudinal direction of the substrate;
    the width of the frames arranged at both ends in the longitudinal direction of the substrate is wider than the width of the frames arranged at both ends in the width direction of the substrate;
    The upper surface of the sealing material has a square planar shape,
    A light emitting device according to any one of claims 1-8.
  10.  前記基板の長手方向に配置される前記第1枠部の先端と前記発光素子との間の離隔距離は、前記基板の短手方向に配置される前記第1枠部の先端と前記発光素子との間の離隔距離よりも長い、請求項9に記載の発光装置。 The separation distance between the tip of the first frame portion arranged in the longitudinal direction of the substrate and the light emitting element is the distance between the tip of the first frame portion arranged in the width direction of the substrate and the light emitting element. 10. A light-emitting device according to claim 9, wherein the distance between is greater than the separation between.
  11.  前記基板の短手方向において、対向する一対の前記第1枠部の先端と前記基板の端部との間の離隔距離を加算した長さは、対向する一対の前記第1枠部の先端と前記発光素子との間の離隔距離を加算した長さよりも長い、請求項1-10の何れか一項に記載の発光装置。 In the lateral direction of the substrate, the length obtained by adding the distance between the ends of the pair of first frame portions facing each other and the end portion of the substrate is equal to the distance between the tips of the pair of first frame portions facing each other 11. The light-emitting device according to claim 1, wherein the length is longer than the sum of the separation distance from the light-emitting element.
  12.  凹部が形成された配線パターンが上面に配置される基板と、
     前記基板の上面に配置された発光素子と、
     前記発光素子を囲むように前記基板の上面に配置される枠体と、
     前記枠体の内側に配置され、前記発光素子から出射された光の波長を変換した光を出射する蛍光体を含み、且つ、前記発光素子を封止する封止材と、を有し、
     前記枠体は、前記発光素子側に突出した第1内周曲面を有する第1枠部と、第2内周曲面を有する第2枠部と、を少なくとも有し、
     前記第1枠部と前記第2枠部との接続部は、前記発光素子の上面と同一の高さとなるように配置され、
     前記基板は、矩形の平面形状を有すると共に、前記発光素子に電気的に接続される第1配線及び第2配線が前記基板の長手方向に沿って配列され、
     前記基板の長手方向の両端に配置される前記枠体の幅は、前記基板の短手方向の両端に配置される前記枠体の幅より広く、
     前記基板の長手方向に配置される一対の前記第1枠部は、前記凹部を覆うように配置される、ことを特徴とする発光装置。
    a substrate on which a wiring pattern having a concave portion is arranged;
    a light emitting element disposed on the upper surface of the substrate;
    a frame arranged on the upper surface of the substrate so as to surround the light emitting element;
    a sealing material disposed inside the frame, containing a phosphor that emits light obtained by converting the wavelength of light emitted from the light emitting element, and sealing the light emitting element,
    The frame has at least a first frame portion having a first inner peripheral curved surface protruding toward the light emitting element and a second frame portion having a second inner peripheral curved surface,
    a connection portion between the first frame portion and the second frame portion is arranged so as to have the same height as the upper surface of the light emitting element;
    the substrate has a rectangular planar shape, and first wiring and second wiring electrically connected to the light emitting element are arranged along the longitudinal direction of the substrate;
    the width of the frames arranged at both ends in the longitudinal direction of the substrate is wider than the width of the frames arranged at both ends in the width direction of the substrate;
    A light emitting device, wherein the pair of first frame portions arranged in the longitudinal direction of the substrate are arranged so as to cover the concave portion.
PCT/JP2022/027159 2021-07-08 2022-07-08 Light emission device WO2023282357A1 (en)

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