WO2023279514A1 - 量测装置、量测补偿系统、量测方法及量测补偿方法 - Google Patents

量测装置、量测补偿系统、量测方法及量测补偿方法 Download PDF

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WO2023279514A1
WO2023279514A1 PCT/CN2021/117061 CN2021117061W WO2023279514A1 WO 2023279514 A1 WO2023279514 A1 WO 2023279514A1 CN 2021117061 W CN2021117061 W CN 2021117061W WO 2023279514 A1 WO2023279514 A1 WO 2023279514A1
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Prior art keywords
wafer
distance
measurement
level
sensor
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PCT/CN2021/117061
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English (en)
French (fr)
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李想
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长鑫存储技术有限公司
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Priority to US17/669,571 priority Critical patent/US20230010284A1/en
Publication of WO2023279514A1 publication Critical patent/WO2023279514A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B21/00—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant
    • G01B21/02—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness
    • G01B21/04—Measuring arrangements or details thereof, where the measuring technique is not covered by the other groups of this subclass, unspecified or not relevant for measuring length, width, or thickness by measuring coordinates of points
    • G01B21/045—Correction of measurements

Definitions

  • the present application relates to the field of semiconductor technology, and in particular to a measurement device, a measurement compensation system, a measurement method and a measurement compensation method.
  • the etching machine can include a reaction chamber body, an upper electrode and a wafer chuck.
  • the reaction chamber body is provided with a reaction chamber, the upper electrode and wafer chuck are located in the reaction chamber, and the wafer is placed on the The upper and lower electrodes of the chuck apply a suction voltage to the wafer chuck, so that the wafer is adsorbed on the wafer chuck.
  • the distance between the wafer chuck and the upper electrode is precisely controlled to achieve the best discharge position, which can better achieve the accuracy of the process; at the same time, when the etching machine is working, the inside of the reaction chamber is a plasma environment At this time, the wafer is easily ionized, which makes the wafer negatively charged, which easily causes the voltage difference between the positive electrode area and the negative electrode area of the wafer chuck to be unequal to the wafer, which makes the wafer chuck deflect and causes the etching machine
  • the safety and reliability of the wafer are low, so in the etching process, it is also necessary to precisely control the level of the wafer chuck.
  • the distance between the wafer chuck and the upper electrode is usually measured manually by using a calibration jig and a vernier caliper.
  • the process generally includes: placing the calibration jig in the reaction chamber, and then the reaction chamber is closed. Open it, take out the calibration jig, and measure the length of the calibration jig with a vernier caliper.
  • the application provides a measurement device, the measurement device includes a fixture wafer, and the fixture wafer includes:
  • the distance measuring sensor is arranged on the front side of the wafer, and is used to measure the distance between the fixture wafer and the top of the reaction chamber after the fixture wafer is placed on the wafer chuck of the reaction chamber. the distance between the upper electrodes;
  • a level sensor arranged on the front side of the wafer, the level sensor is used to measure the level of the wafer chuck after the jig wafer is placed on the wafer chuck;
  • the data transmission device is connected with the distance measuring sensor and the level sensor, and is used for transmitting the data measured by the distance measuring sensor and the data measured by the level sensor.
  • the present application also provides a measurement compensation system, including:
  • the compensation system is connected with the machine where the data transmission module and the reaction chamber are located, and is used to compensate the machine according to the distance compensation value and/or the level compensation value.
  • the application also provides a measurement method, comprising the steps of:
  • the present application also provides a measurement compensation method, including the following steps:
  • the machine where the reaction chamber is located is compensated according to the distance compensation value and/or the level compensation value.
  • the measurement device in this application is provided with a distance measuring sensor on the front of the wafer, without opening the reaction chamber and manually using a calibration jig and a vernier caliper to measure the distance between the wafer chuck and the upper electrode, avoiding manual measurement.
  • the measuring device in this application also sets the level The sensor can obtain the level status of the wafer chuck in real time without opening the reaction chamber. When the wafer chuck is deflected, it can be detected in time to prevent abnormal detection caused by the horizontal position deviation of the wafer chuck, and can improve The safety and reliability of the reaction chamber work.
  • the measurement compensation system in this application measures the distance between the wafer chuck and the upper electrode through the measurement device and obtains the level of the wafer chuck, without opening the reaction chamber for manual measurement, avoiding errors caused by manual measurement, The accuracy is high, and at the same time, there is no need to restart the machine after the measurement is completed, which can shorten the downtime of the machine and improve work efficiency.
  • the wafer chuck is deflected, it can be detected in time, thereby improving the safety of the reaction chamber. performance and reliability; the measurement compensation system in this application compensates the machine through the compensation system, so that the reaction chamber can better achieve the accuracy of the process in the subsequent etching process.
  • the measurement method in this application measures the distance between the wafer chuck and the upper electrode through the ranging sensor installed on the front of the wafer, without opening the reaction chamber and manually using the calibration jig and vernier caliper to measure the distance between the wafer chuck and the upper electrode. The distance between them is measured, avoiding the error caused by manual measurement, and the accuracy is high; at the same time, there is no need to restart the machine after the measurement is completed, which can shorten the downtime of the machine, thereby improving work efficiency; further, in this application The measurement method also uses the level sensor installed on the front of the wafer to obtain the level of the wafer chuck in real time without opening the reaction chamber. When the wafer chuck is deflected, it can be detected in time, thereby improving the work of the reaction chamber. safety and reliability.
  • the measurement compensation method in the present application compensates the machine platform through the compensation system, so that the reaction chamber can better realize the precision of the process in the subsequent etching process.
  • FIG. 1 is a schematic structural diagram of a measuring device provided in an embodiment of the present application.
  • FIG. 2 is a schematic diagram of measurement performed by a measuring device provided in another embodiment of the present application.
  • FIG. 3 is a top view of a fixture wafer in a measuring device provided by an embodiment of the present application.
  • Fig. 4 is a top view of the fixture wafer only showing the wafer and the distance measuring sensor in the measurement device provided by another embodiment of the present application;
  • FIG. 5 is a flowchart of a measurement method provided in an embodiment of the present application.
  • FIG. 6 is a flowchart of a measurement compensation method provided in an embodiment of the present application.
  • Embodiments of the invention are described herein with reference to top plan views that are idealized embodiments (and intermediate structures) of the application, such that variations in the shapes shown as a result of, for example, manufacturing techniques and/or tolerances are to be expected.
  • embodiments of the present application should not be limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing techniques.
  • the regions shown in the figures are schematic in nature and their shapes do not indicate the actual shape of a region of a device and are not intended to limit the scope of the application.
  • the present application provides a measurement device, the measurement device includes a jig wafer, and the jig wafer includes a wafer 11 , a distance sensor 12 , a level sensor 13 and a data transmission device 14 .
  • the distance measuring sensor 12 is arranged on the front side of the wafer 11, and is used to measure the fixture wafer and the upper electrode 5 located at the top of the reaction chamber after the fixture wafer is placed on the wafer chuck 4 of the reaction chamber.
  • the level sensor 13 is arranged on the front of the wafer 11, and is used to measure the level of the wafer chuck 4 after the fixture wafer is placed on the wafer chuck 4; the data transmission device 14, and the distance measuring device The sensor 12 and the level sensor 13 are connected to transmit the data measured by the ranging sensor 12 and the data measured by the level sensor 13 .
  • the measurement device in the present application is provided with the distance measuring sensor 12 on the front of the wafer 11, without opening the reaction chamber and manually using the calibration jig and vernier caliper to measure the distance between the wafer chuck 4 and the upper electrode 5, avoiding The error caused by manual measurement is eliminated, and the accuracy is high; at the same time, there is no need to restart the machine after the measurement is completed, which can shorten the downtime of the machine and improve work efficiency; 11 is provided with a level sensor 13 on the front, without opening the reaction chamber, the level of the wafer chuck 4 can be obtained in real time. When the wafer chuck 4 is deflected, it can be detected in time to prevent the wafer chuck from being caused by the horizontal position deviation. Abnormal detection can improve the safety and reliability of the reaction chamber.
  • the number of distance measuring sensors 12 can be multiple, such as 1, 3 or 5, etc., and the application does not limit the number of distance measuring sensors 12. ;
  • a plurality of ranging sensors 12 may be arranged at intervals on the front surface of the wafer 11 .
  • five ranging sensors 12 may be set on the front surface of the wafer 11 as an example.
  • one distance measuring sensor 12 may be located at the center of the wafer 11 , and the other distance measuring sensors 12 may be symmetrically distributed around the center of the wafer 11 .
  • the arrangement of the plurality of distance measuring sensors 12 can also be adjusted adaptively by the staff according to the actual situation, and the application does not limit the specific arrangement of the plurality of distance measuring sensors 12 .
  • the distance between the distance measuring sensors 12 and the edge of the wafer 11, which are center-symmetrically distributed with the center of the wafer 11 as the center point can be 0.4-0.8 inches, for example, 0.4, 0.5, 0.6, 0.7 or 0.8 inches
  • the present application is not limited to the distance between the distance measuring sensors 12 and the edge of the wafer 11 that are center-symmetrically distributed with the center of the wafer 11 as the center point. It is not limited; specifically, in one embodiment, the distance between the ranging sensors 12 distributed symmetrically with the center of the wafer 11 as the center point and the edge of the wafer 11 is 0.5 inches.
  • the above data is only an example, and in an actual embodiment, the distance between the ranging sensors 12 and the edge of the wafer 11 distributed symmetrically with the center of the wafer 11 as the center point is not limited to the above data. .
  • the ranging sensor 12 may include, but not limited to, any one or several of infrared ranging sensors, ultrasonic ranging sensors, laser ranging sensors or radar sensors, etc., and the application does not limit the type of ranging sensors 12 Specifically, in one of the embodiments, the ranging sensor 12 includes an infrared ranging sensor.
  • the infrared ranging sensor may have a pair of infrared signal emitting diodes, infrared signal receiving diodes and a signal processor.
  • the infrared ranging sensor can use the infrared signal emitting diode to emit a beam of infrared signals, which form a reflection process after irradiating the upper electrode 5; the infrared signal receiving diode receives the infrared signal and processes the time difference between emission and reception The signal processor processes the data of the time difference to obtain the distance between the fixture wafer and the upper electrode 5 .
  • the measurement device provided by the above embodiments can avoid the difficult operation and errors caused by the auxiliary reflection of the reflector required for infrared signal reflection, and improve the accuracy of measuring the distance between the jig wafer and the upper electrode 5 .
  • the number of level sensors 13 can be multiple, such as 1, 2, 3 or 4, etc., the application does not limit the number of level sensors 13;
  • the level sensors 13 can be arranged at intervals on the front of the wafer 11
  • the level sensor 13 may include but not limited to a biaxial level sensor or other level sensors, and the application does not limit the type of the level sensor 13; specifically, in one embodiment, the level sensor 13 includes a biaxial level sensor.
  • the dual-axis level sensor can simultaneously measure the horizontal angle in two directions (namely pitch angle and roll angle), and can convert the inclination signal of the horizontal angle in these two directions into a usable output electrical signal according to certain rules, so The levelness of the entire measured surface can be determined.
  • Data transmission device 14 can include but not limited to Wi-Fi transmission module, bluetooth transmission module, infrared transmission module, NFC (Near Field Communication, short-distance wireless communication) transmission module or ZigBee (purple peak) transmission module etc., this application is for data
  • the type of the transmission device 14 is not limited; specifically, in one embodiment, the data transmission device 14 includes a Wi-Fi transmission module.
  • the fixture wafer also includes a control circuit 15, and the control circuit 15 is located on the wafer 11; the data transmission device 14 communicates with the distance sensor 12 and the horizontal The sensors 13 are connected; the control circuit 15 is used to control the operation of the distance measuring sensor 12, the level sensor 13 and the data transmission device 14, collect the data measured by the distance measurement sensor 12 and the level sensor 13, and send the data to the data transmission device 14.
  • the fixture wafer may further include a switch 16 located on the wafer 11 and connected to the control circuit 15 for controlling the control circuit 15 to be turned on and off.
  • the measuring device may further include a communication device 2 and a data processing device (not shown in the figure); wherein the communication device 2 includes a data receiving module and a data transmitting module.
  • the data receiving module is communicatively connected with the data transmission device 14, and is used to receive the data measured by the distance measuring sensor 12 and the data measured by the level sensor 13 transmitted by the data transmission device 14; the data processing device and the data receiving module and the data transmission The modules are connected to each other and are used to analyze the data measured by the distance sensor 12 and the data measured by the level sensor 13 to determine whether there is a distance deviation between the fixture wafer and the upper electrode 5 and whether the wafer chuck 4 is There is a horizontal deviation, and when there is a distance deviation, the distance compensation value is obtained according to the data measured by the ranging sensor 12, and when there is a horizontal deviation, the horizontal compensation value is obtained according to the data measured by the level sensor 13; the data transmission module is used to transmit the distance compensation value and level compensation values.
  • the measurement device may further include a fixture wafer box 3 .
  • the communication device 2 and/or the data processing device may be located in the fixture wafer box 3, and the communication device 2 and/or the data processing device may also be located outside the fixture wafer box 3.
  • the specific placement locations of the device 2 and the data processing device are not limited.
  • the present application also provides a measurement compensation system, including the measurement device and compensation system as described in any of the above-mentioned embodiments, the compensation system is connected with the machine where the data transmission module and the reaction chamber are located, and is used to The compensation value and/or the horizontal compensation value compensate the machine.
  • the machine table can use the mechanical arm to transfer the jig wafer to the position that needs to be calibrated; the data transmission module can feed back the distance compensation value and/or horizontal compensation value obtained by the data processing device to the machine table, so as to control the machine.
  • the platform is compensated, and the calibration is completed.
  • the measurement compensation system in this application measures the distance between the wafer chuck 4 and the upper electrode 5 through the measurement device, and obtains the level of the wafer chuck 4, without opening the reaction chamber for manual measurement, avoiding manual measurement
  • the generated error has high accuracy, and at the same time, there is no need to restart the machine after the measurement is completed, which can shorten the downtime of the machine, thereby improving work efficiency.
  • the wafer chuck 4 is deflected, it can be found in time, thereby improving the response
  • the safety and reliability of the chamber work; the measurement compensation system in this application compensates the machine through the compensation system, so that the reaction chamber can better achieve process accuracy in the subsequent etching process.
  • the compensation system may include but not limited to the machine operating system.
  • the present application also provides a measurement method, including the following steps:
  • S102 Use the distance measuring sensor 12 to measure the distance between the fixture wafer and the upper electrode 5 located on the top of the reaction chamber;
  • the measurement method in this application measures the distance between the wafer chuck 4 and the upper electrode 5 through the ranging sensor 12 installed on the front of the wafer 11, without opening the reaction chamber and manually using the calibration jig and vernier caliper to measure the distance between the wafer chuck 4 and the upper electrode 5.
  • the distance between the suction cup 4 and the upper electrode 5 is measured, which avoids errors caused by manual measurement and has high accuracy; at the same time, there is no need to restart the machine after the measurement is completed, which can shorten the downtime of the machine and improve work efficiency;
  • the measurement method in the present application also uses the level sensor 13 provided on the front of the wafer 11 to obtain the level of the wafer chuck 4 in real time without opening the reaction chamber. When the wafer chuck 4 is deflected, it can It is discovered that the safety and reliability of the reaction chamber can be improved.
  • the measurement method may also include the following steps:
  • the measurement method may also include the following steps:
  • the present application also provides a measurement compensation method, including the following steps:
  • S2 Compensate the machine where the reaction chamber is located according to the distance compensation value and/or the level compensation value.
  • the machine operating system can be used to compensate the machine where the reaction chamber is located according to the distance compensation value, the level compensation value, or the distance compensation value and the level compensation value.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

一种量测装置、量测补偿系统、量测方法及量测补偿方法，量测装置包括治具晶圆，治具晶圆包括：晶圆（11）；测距传感器（12），设置于晶圆（11）的正面，用于在治具晶圆置于反应腔室的晶圆吸盘（4）上后量测治具晶圆与位于反应腔室顶部的上电极（5）之间的距离；水平传感器（13），设置于晶圆（11）的正面，水平传感器（13）用于在治具晶圆置于晶圆吸盘（4）上后量测晶圆吸盘（4）的水平状况；数据传送装置（14），与测距传感器（12）及水平传感器（13）相连接，用于传送测距传感器（12）量测的数据及水平传感器（13）量测的数据。避免了人工测量产生的误差，准确性较高；无需打开反应腔室即可实时地获取晶圆吸盘（4）的水平状况，能够提升反应腔室工作的安全性和可靠性。

Description

量测装置、量测补偿系统、量测方法及量测补偿方法
本申请要求于2021年07月07日提交中国专利局，申请号为2021107692501，申请名称为“量测装置、量测补偿系统、量测方法及量测补偿方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及半导体技术领域，特别是涉及一种量测装置、量测补偿系统、量测方法及量测补偿方法。
背景技术
随着科技的快速发展，智能手机、平板电脑等电子产品已经成为现代人生活中不可或缺的产品。这些电子产品内部包括有许多半导体芯片，而半导体芯片的主要制造材料就是晶圆。晶圆需要刻蚀出线路图案，通常采用半导体设备对晶圆进行刻蚀。以刻蚀机为例，刻蚀机可以包括反应腔室本体、上电极和晶圆吸盘，反应腔室本体开设有反应腔，上电极和晶圆吸盘位于反应腔内，晶圆放置于晶圆吸盘上，下电极为晶圆吸盘施加吸附电压，从而将晶圆吸附于晶圆吸盘上。
根据刻蚀工艺需求，精确控制晶圆吸盘与上电极之间的间距，以达到最佳的放电位置，可以更好地实现工艺的精度；同时当刻蚀机工作时，反应腔内部为等离子环境，此时晶圆容易被电离，从而使得晶圆带负电，从而容易导致晶圆吸盘的正电极区域和负电极区域与晶圆的电压差不相等，使得晶圆吸盘偏斜，导致刻蚀机的安全性和可靠性较低，因此在刻蚀过程中，还需精确控制晶圆吸盘水平。目前刻蚀过程中通常是人工使用校正治具与游标卡尺来对晶圆吸盘与上电极之间的间距进行测量，过程大致包括：将校正治具放置于反应腔室内，待反应腔室盖合后再打开，并取出校正治具，然后使用游标卡尺量测校正治具的长度。
然而，人工测量不免存在误差和失误，准确性较低；且由于人工测量需要多次开合反应腔室，因此在测量完成后需要复机，增加了机台的宕机时间，工作效率较低。
发明内容
本申请提供了一种量测装置，所述量测装置包括治具晶圆，所述治具晶圆包括：
晶圆；
测距传感器，设置于所述晶圆的正面，用于在所述治具晶圆置于反应腔室的晶圆吸盘上后量测所述治具晶圆与位于所述反应腔室顶部的上电极之间的距离；
水平传感器，设置于所述晶圆的正面，所述水平传感器用于在所述治具晶圆置于所述晶圆吸盘上后量测所述晶圆吸盘的水平状况；
数据传送装置，与所述测距传感器及所述水平传感器相连接，用于传送所述测距传感器量测的数据及所述水平传感器量测的数据。
本申请还提供了一种量测补偿系统，包括：
如上述实施例中所述的量测装置；
补偿系统，与所述数据传送模块及所述反应腔室所在的机台相连接，用于根据所述距离补偿值及/或所述水平补偿值对所述机台进行补偿。
本申请还提供了一种量测方法，包括如下步骤：
提供如上述实施例中所述的量测装置，并将所述治具晶圆传送至所述晶圆吸盘上；
使用所述测距传感器量测所述治具晶圆与位于所述反应腔室顶部的上电极之间的距离；
使用所述水平传感器量测所述晶圆吸盘的水平状况。
本申请还提供了一种量测补偿方法，包括如下步骤：
采用如上述实施例中所述的量测方法获得所述距离补偿值及/或水平补偿值；
根据所述距离补偿值及/或所述水平补偿值对所述反应腔室所在的机台进行补偿。
本申请中的量测装置通过在晶圆的正面设置测距传感器，无需打开反应腔室并人工使用校正治具及游标卡尺对晶圆吸盘与上电极之间的间距进行测量，避免了人工测量产生的误差，准确性较高；同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率；进一步地，本申请中的量测装置还通过在晶圆的正面设置水平传感器，无需打开反应腔室即可实时地获取晶圆吸盘的水平状况，当晶圆吸盘偏斜时，能够及时地发现，防止因为晶圆吸盘水平位置偏移导致的侦测异常，并能够提升反应腔室工作的安全性和可靠性。
本申请中的量测补偿系统通过量测装置对晶圆吸盘与上电极之间的间距进行测量并获取晶圆吸盘的水平状况，无需打开反应腔室人工测量，避免了人工测量产生的误差，准确性较高，同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率， 当晶圆吸盘偏斜时，能够及时地发现，从而能够提升反应腔室工作的安全性和可靠性；本申请中的量测补偿系统通过补偿系统对机台进行补偿，使得反应腔室在后续的刻蚀工艺中能够更好地实现工艺的精度。
本申请中的量测方法通过晶圆正面设置的测距传感器对晶圆吸盘与上电极之间的间距进行测量，无需打开反应腔室并人工使用校正治具及游标卡尺对晶圆吸盘与上电极之间的间距进行测量，避免了人工测量产生的误差，准确性较高；同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率；进一步地，本申请中的量测方法还通过晶圆正面设置的水平传感器，无需打开反应腔室即可实时地获取晶圆吸盘的水平状况，当晶圆吸盘偏斜时，能够及时地发现，从而能够提升反应腔室工作的安全性和可靠性。
本申请中的量测补偿方法通过补偿系统对机台进行补偿，使得反应腔室在后续的刻蚀工艺中能够更好地实现工艺的精度。
附图说明
为了更清楚地说明本申请实施例或传统技术中的技术方案，下面将对实施例或传统技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请一实施例中提供的量测装置的结构示意图；
图2为本申请另一实施例中提供的量测装置进行量测的原理图；
图3为本申请一实施例提供的量测装置中的治具晶圆的俯视图；
图4为本申请另一实施例提供的量测装置中只示意出晶圆及测距传感器的治具晶圆的俯视图；
图5为本申请一实施例中提供的量测方法的流程图；
图6为本申请一实施例中提供的量测补偿方法的流程图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。附图中给出了本申请的首选实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容更加透彻全面。
除非另有定义，本文所使用的所有的技术和科学术语与属于本申请的技术领域的技术 人员通常理解的含义相同。本文中在本申请的说明书中所使用的术语只是为了描述具体的实施例的目的，不是旨在于限制本申请。
应当明白，当元件或层被称为“于...上”或“与...相连接”其它元件时，其可以直接地位于其它元件上或与其他元件相连接，或者可以存在居间的元件。
空间关系术语例如“在...下”、“在...下面”、“下面的”、“在...之下”、“在...之上”、“上面的”等，在这里可以用于描述图中所示的一个元件或特征与其它元件或特征的关系。应当明白，除了图中所示的取向以外，空间关系术语还包括使用和操作中的器件的不同取向。例如，如果附图中的器件翻转，描述为“在其它元件下面”或“在其之下”或“在其下”元件或特征将取向为在其它元件或特征“上”。因此，示例性术语“在...下面”和“在...下”可包括上和下两个取向。此外，器件也可以包括另外地取向(譬如，旋转90度或其它取向)，并且在此使用的空间描述语相应地被解释。
在此使用时，单数形式的“一”、“一个”和“所述/该”也可以包括复数形式，除非上下文清楚指出另外的方式。还应明白，当术语“组成”和/或“包括”在该说明书中使用时，可以确定所述特征、整数、步骤、操作、元件和/或部件的存在，但不排除一个或更多其它的特征、整数、步骤、操作、元件、部件和/或组的存在或添加。同时，在此使用时，术语“和/或”包括相关所列项目的任何及所有组合。
这里参考作为本申请的理想实施例(和中间结构)的平面俯视图来描述发明的实施例，这样可以预期由于例如制造技术和/或容差导致的所示形状的变化。因此，本申请的实施例不应当局限于在此所示的区的特定形状，而是包括由于例如制造技术导致的形状偏差。因此，图中显示的区实质上是示意性的，它们的形状并不表示器件的区的实际形状，且并不限定本申请的范围。
请参阅图1至图2，本申请提供一种量测装置，量测装置包括治具晶圆，治具晶圆包括晶圆11、测距传感器12、水平传感器13及数据传送装置14。其中，测距传感器12设置于晶圆11的正面，用于在治具晶圆置于反应腔室的晶圆吸盘4上后，量测治具晶圆与位于反应腔室顶部的上电极5之间的距离；水平传感器13设置于晶圆11的正面，用于在治具晶圆置于晶圆吸盘4上后，量测晶圆吸盘4的水平状况；数据传送装置14，与测距传感器12及水平传感器13相连接，用于传送测距传感器12量测的数据及水平传感器13量测的数据。
本申请中的量测装置通过在晶圆11的正面设置测距传感器12，无需打开反应腔室并人工使用校正治具及游标卡尺对晶圆吸盘4与上电极5之间的间距进行测量，避免了人工 测量产生的误差，准确性较高；同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率；进一步地，本申请中的量测装置还通过在晶圆11的正面设置水平传感器13，无需打开反应腔室即可实时地获取晶圆吸盘4的水平状况，当晶圆吸盘4偏斜时，能够及时地发现，防止因为晶圆吸盘水平位置偏移导致的侦测异常，并能够提升反应腔室工作的安全性和可靠性。
请继续参阅图1至图2，在其中一个实施例中，测距传感器12的数量可以为多个，譬如1、3或5个等等，本申请对于测距传感器12的数量并不做限定；多个测距传感器12可以于晶圆11的正面间隔排布。
具体的，请参阅图3，在其中一个实施例中，可以在晶圆11的正面设置5个测距传感器12作为示例。
请继续参阅图3，在其中一个实施例中，可以由其中一个测距传感器12位于晶圆11的中心，其他测距传感器12则可以以晶圆11的中心为中心点呈中心对称分布。在其他实施例中，多个测距传感器12的排布方式也可以由工作人员根据实际情况进行适应性的调整，本申请对于多个测距传感器12的具体排布方式并不做限定。
请参阅图4，在其中一个实施例中，若晶圆11的尺寸为300mm，以晶圆11的中心为中心点呈中心对称分布的测距传感器12与晶圆11边缘之间的距离可以为0.4-0.8英寸，譬如，0.4、0.5、0.6、0.7或0.8英寸，本申请对于以晶圆11的中心为中心点呈中心对称分布的测距传感器12与晶圆11边缘之间的距离大小并不做限定；具体的，在其中一个实施例中，以晶圆11的中心为中心点呈中心对称分布的测距传感器12与晶圆11边缘之间的距离为0.5英寸。
需要说明的是，上述数据仅作为示例，在实际实施例中以晶圆11的中心为中心点呈中心对称分布的测距传感器12与晶圆11边缘之间的距离并不以上述数据为限。
测距传感器12可以包括但不仅限于红外测距传感器、超声波测距传感器、激光测距传感器或雷达传感器等等中的任意一种或几种，本申请对于测距传感器12的类型并不做限定；具体的，在其中一个实施例中，测距传感器12包括红外测距传感器。
在其中一个实施例中，红外测距传感器可以具有一对红外信号发射二极管与红外信号接收二极管及信号处理器。如图2所示，红外测距传感器可以利用红外信号发射二极管发射出一束红外信号，在照射到上电极5后形成一个反射的过程；红外信号接收二极管接收红外信号并处理发射与接收的时间差的数据，信号处理器对该时间差的数据进行处理，得出治具晶圆与上电极5之间的距离。
上述实施例提供的量测装置能够避免红外信号反射所需的反光板辅助反射所造成的不易操作以及误差，提高了对治具晶圆与上电极5之间的距离量测的准确性。
请继续参阅图3，在其中一个实施例中，水平传感器13的数量可以为多个，譬如1、2、3或4个等等，本申请对于水平传感器13的数量并不做限定；多个水平传感器13可以于晶圆11的正面间隔排布
水平传感器13可以包括但不仅限于双轴水平传感器或其他水平传感器，本申请对于水平传感器13的类型并不做限定；具体的，在其中一个实施例中，水平传感器13包括双轴水平传感器。双轴水平传感器可以同时测量两个方向的水平角度(即俯仰角和横滚角)，并能按照一定的规律将这两个方向的水平角度的倾角信号转换成可用的输出的电信号，因此可以定出整个被测面的水平度。
数据传送装置14可以包括但不仅限于Wi-Fi传送模块，蓝牙传送模块，红外传送模块，NFC(Near Field Communication，近距离无线通信)传送模块或ZigBee(紫峰)传送模块等等，本申请对于数据传送装置14的类型并不做限定；具体的，在其中一个实施例中，数据传送装置14包括Wi-Fi传送模块。
请继续参阅图1至图3，在其中一个实施例中，治具晶圆还包括控制电路15，控制电路15位于晶圆11上；数据传送装置14经由控制电路15与测距传感器12及水平传感器13相连接；控制电路15用于控制测距传感器12、水平传感器13及数据传送装置14工作，收集测距传感器12及水平传感器13量测的数据，并将数据发送至数据传送装置14。
请继续参阅图3，在其中一个实施例中，治具晶圆还可以包括开关16，开关16位于晶圆11上，与控制电路15相连接，用于控制控制电路15的开启与关闭。
请继续参阅图1，在其中一个实施例中，量测装置还可以包括通信装置2及数据处理装置(图中未示出)；其中通信装置2包括数据接收模块及数据传送模块。
具体的，数据接收模块与数据传送装置14通信连接，用于接收数据传送装置14传送的测距传感器12量测的数据及水平传感器13量测的数据；数据处理装置与数据接收模块及数据传送模块相连接，用于对测距传感器12量测的数据及水平传感器13量测的数据进行分析，以判断治具晶圆与上电极5之间的距离是否存在距离偏差及晶圆吸盘4是否存在水平偏差，并在存在距离偏差时根据测距传感器12量测的数据得到距离补偿值，存在水平偏差时根据水平传感器13量测的数据得到水平补偿值；数据传送模块用于传送距离补偿值及水平补偿值。
请继续参阅图1，在其中一个实施例中，量测装置还可以包括治具晶圆盒3。
在其中一个实施例中，通信装置2和/或数据处理装置可以位于治具晶圆盒3内，通信装置2和/或数据处理装置还可以位于治具晶圆盒3外，本申请对于通信装置2及数据处理装置的具体放置位置并不做限定。
本申请还提供一种量测补偿系统，包括如上述任一实施例中所述的量测装置及补偿系统，补偿系统与数据传送模块及反应腔室所在的机台相连接，用于根据距离补偿值及/或水平补偿值对机台进行补偿。
具体的，机台可以使用机械手臂将治具晶圆传入到需要校准的位置；数据传送模块可以将数据处理装置得出的距离补偿值和/或水平补偿值反馈至机台，以对机台进行补偿，至此完成校准。
本申请中的量测补偿系统通过量测装置对晶圆吸盘4与上电极5之间的间距进行测量，并获取晶圆吸盘4的水平状况，无需打开反应腔室人工测量，避免了人工测量产生的误差，准确性较高，同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率，当晶圆吸盘4偏斜时，能够及时地发现，从而能够提升反应腔室工作的安全性和可靠性；本申请中的量测补偿系统通过补偿系统对机台进行补偿，使得反应腔室在后续的刻蚀工艺中能够更好地实现工艺的精度。
在其中一个实施例中，补偿系统可以包括但不仅限于机台操作系统。
请结合图2参阅图5，本申请还提供一种量测方法，包括如下步骤：
S101：提供如上述任一实施例中所述的量测装置，并将治具晶圆传送至晶圆吸盘4上；
S102：使用测距传感器12量测治具晶圆与位于反应腔室顶部的上电极5之间的距离；
S103：使用水平传感器13量测晶圆吸盘4的水平状况。
本申请中的量测方法通过晶圆11正面设置的测距传感器12对晶圆吸盘4与上电极5之间的间距进行测量，无需打开反应腔室并人工使用校正治具及游标卡尺对晶圆吸盘4与上电极5之间的间距进行测量，避免了人工测量产生的误差，准确性较高；同时在测量完成后无需复机，可以缩短机台的宕机时间，进而提升工作效率；进一步地，本申请中的量测方法还通过晶圆11正面设置的水平传感器13，无需打开反应腔室即可实时地获取晶圆吸盘4的水平状况，当晶圆吸盘4偏斜时，能够及时地发现，从而能够提升反应腔室工作的安全性和可靠性。
请继续参阅图2，在其中一个实施例中，量测方法还可以包括如下步骤：
基于测距传感器12量测的数据判断治具晶圆与上电极5之间的距离是否存在距离偏差，并在存在距离偏差时根据测距传感器12量测的数据得到距离补偿值。
在其中一个实施例中，量测方法还可以包括如下步骤：
基于水平传感器13量测的数据判断晶圆吸盘4是否存在水平偏差，并在存在水平偏差时根据水平传感器13量测的数据得到水平补偿值。
请参阅图6，本申请还提供一种量测补偿方法，包括如下步骤：
S1：采用如上述任一实施例中所述的量测方法获得距离补偿值及/或水平补偿值；
S2：根据所述距离补偿值及/或所述水平补偿值对所述反应腔室所在的机台进行补偿。
在其中一个实施例中，可以使用机台操作系统根据距离补偿值、水平补偿值或距离补偿值及水平补偿值对反应腔室所在的机台进行补偿。
应该理解的是，虽然图5至图6的流程图中的各个步骤按照箭头的指示依次显示，但是这些步骤并不是必然按照箭头指示的顺序依次执行。除非本文中有明确的说明，这些步骤的执行并没有严格的顺序限制，这些步骤可以以其它的顺序执行。而且，图5至图6中的至少一部分步骤可以包括多个步骤或者多个阶段，这些步骤或者阶段并不必然是在同一时刻执行完成，而是可以在不同的时刻执行，这些步骤或者阶段的执行顺序也不必然是依次进行，而是可以与其它步骤或者其它步骤中的步骤或者阶段的至少一部分轮流或者交替地执行。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。

Claims (16)

  1. 一种量测装置，包括治具晶圆，所述治具晶圆包括：
    晶圆；
    测距传感器，设置于所述晶圆的正面，用于在所述治具晶圆置于反应腔室的晶圆吸盘上后量测所述治具晶圆与位于所述反应腔室顶部的上电极之间的距离；
    水平传感器，设置于所述晶圆的正面，所述水平传感器用于在所述治具晶圆置于所述晶圆吸盘上后量测所述晶圆吸盘的水平状况；
    数据传送装置，与所述测距传感器及所述水平传感器相连接，用于传送所述测距传感器量测的数据及所述水平传感器量测的数据。
  2. 根据权利要求1所述的量测装置，其中，所述测距传感器的数量为多个，多个所述测距传感器于所述晶圆的正面间隔排布。
  3. 根据权利要求2所述的量测装置，其中，其中一个所述测距传感器位于所述晶圆的中心，其他所述测距传感器以所述晶圆的中心为中心点呈中心对称分布。
  4. 根据权利要求1所述的量测装置，其中，所述测距传感器包括红外测距传感器。
  5. 根据权利要求1所述的量测装置，其中，所述水平传感器的数量为多个，多个所述水平传感器于所述晶圆的正面间隔排布。
  6. 根据权利要求1所述的量测装置，其中，所述水平传感器包括双轴水平传感器。
  7. 根据权利要求1所述的量测装置，其中，所述治具晶圆还包括：
    控制电路，位于所述晶圆上；所述数据传送装置经由所述控制电路与所述测距传感器及所述水平传感器相连接；所述控制电路用于控制所述测距传感器、所述水平传感器及所述数据传送装置工作，并收集所述测距传感器及所述水平传感器量测的数据发送至所述数据传送装置。
  8. 根据权利要求7所述的量测装置，其中，所述治具晶圆还包括：
    开关，位于所述晶圆上，与所述控制电路相连接，用于控制所述控制电路的开启与关闭。
  9. 根据权利要求1至8中任一项所述的量测装置，还包括：
    通信装置，包括数据接收模块及数据传送模块，所述数据接收模块与所述数据传送装置通信连接，用于接收所述数据传送装置传送的所述测距传感器量测的数据及所述水平传感器量测的数据；
    数据处理装置，与所述数据接收模块及所述数据传送模块相连接，用于对所述测距传感器量测的数据及所述水平传感器量测的数据进行分析，以判断所述治具晶圆与所述上电极之间的距离是否存在距离偏差及所述晶圆吸盘是否存在水平偏差，并在存在距离偏差时根据所述测距传感器量测的数据得到距离补偿值，存在水平偏差时根据所述水平传感器量测的数据得到水平补偿值；
    所述数据传送模块用于传送所述距离补偿值及所述水平补偿值。
  10. 根据权利要求9所述的量测装置，还包括治具晶圆盒，所述通信装置及所述数据处理装置均位于所述治具晶圆盒内。
  11. 一种量测补偿系统，包括：
    如权利要求9或10所述的量测装置；
    补偿系统，与所述数据传送模块及所述反应腔室所在的机台相连接，用于根据所述距离补偿值及/或所述水平补偿值对所述机台进行补偿。
  12. 根据权利要求11所述的量测补偿系统，其中，所述补偿系统包括机台操作系统。
  13. 一种量测方法，包括：
    提供如权利要求1至10中任一项所述的量测装置，并将所述治具晶圆传送至所述晶圆吸盘上；
    使用所述测距传感器量测所述治具晶圆与位于所述反应腔室顶部的上电极之间的距离；
    使用所述水平传感器量测所述晶圆吸盘的水平状况。
  14. 根据权利要求13所述的量测方法，还包括：
    基于所述测距传感器量测的数据判断所述治具晶圆与所述上电极之间的距离是否存在距离偏差，并在存在距离偏差时根据所述测距传感器量测的数据得到距离补偿值；
    基于所述水平传感器量测的数据判断所述晶圆吸盘是否存在水平偏差，并在存在水平偏差时根据所述水平传感器量测的数据得到水平补偿值。
  15. 一种量测补偿方法，包括：
    采用如权利要求14所述的量测方法获得所述距离补偿值及/或水平补偿值；
    根据所述距离补偿值及/或所述水平补偿值对所述反应腔室所在的机台进行补偿。
  16. 根据权利要求15所述的量测补偿方法，其中，使用机台操作系统根据所述距离补偿值及/或所述水平补偿值对所述反应腔室所在的机台进行补偿。
PCT/CN2021/117061 2021-07-07 2021-09-08 量测装置、量测补偿系统、量测方法及量测补偿方法 WO2023279514A1 (zh)

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