WO2023277920A1 - System and method for delivering precursor to a process chamber - Google Patents
System and method for delivering precursor to a process chamber Download PDFInfo
- Publication number
- WO2023277920A1 WO2023277920A1 PCT/US2021/040118 US2021040118W WO2023277920A1 WO 2023277920 A1 WO2023277920 A1 WO 2023277920A1 US 2021040118 W US2021040118 W US 2021040118W WO 2023277920 A1 WO2023277920 A1 WO 2023277920A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- valve
- reservoir
- buffer
- precursor
- buffer zone
- Prior art date
Links
- 239000002243 precursor Substances 0.000 title claims abstract description 86
- 238000000034 method Methods 0.000 title claims description 71
- 239000006200 vaporizer Substances 0.000 claims abstract description 33
- 238000011144 upstream manufacturing Methods 0.000 claims abstract description 18
- 239000012530 fluid Substances 0.000 claims abstract description 12
- 238000004891 communication Methods 0.000 claims abstract description 11
- 239000007789 gas Substances 0.000 claims description 70
- 239000000758 substrate Substances 0.000 claims description 13
- 238000009826 distribution Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 2
- 230000005494 condensation Effects 0.000 description 10
- 238000009833 condensation Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000012713 reactive precursor Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45557—Pulsed pressure or control pressure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
Definitions
- Embodiments of the present disclosure generally relate to methods of delivering process gases for processing substrates.
- Thin film technology has moved toward thinner deposition layers, better uniformity over increasingly larger area substrates, such as substrate sizes for flat panel technology. Thin film technology has also moved towards larger production yields and higher productivity.
- Various processes are used for depositing thin films over substrates, including sputter or physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) methods.
- Forming and growing thin films by ALD includes formation of a saturated monolayer of reactive precursor molecules by chemisorption at the deposition surface of the substrate.
- reactive gaseous precursors are alternately pulsed or injected into a process chamber. Each pulse or injection of a reactive precursor is separated by an inert gas purge. The precursor injections react on the surface of the substrate to form a new atomic layer with each full cycle of the process.
- Delivering precursors to the process chamber uses flow timing control. In order to maintain good flow timing control, precursor is released from a vaporizer continuously to maintain a steady state condition. Continuous flow of precursor vapor from the vaporizer is exhausted when flow into the chamber is not required according to the process recipe.
- a precursor delivery system having a vaporizer and a reservoir.
- the reservoir includes an upstream end in fluid communication with the vaporizer.
- a reservoir valve is in fluid communication with a downstream end of the reservoir and a final valve is disposed downstream of the reservoir valve.
- a buffer zone is defined between the reservoir valve and the final valve.
- a first gas inlet is coupled to the buffer zone. The first gas inlet is coupled to a buffer valve.
- a method of supplying precursors to a process volume of a process chamber includes supplying a precursor to a reservoir until the reservoir reaches a first pressure.
- the precursor is supplied from the reservoir to a buffer zone through a reservoir valve situated in an open state.
- the buffer zone is defined between the reservoir valve and a final valve.
- the precursor is supplied from the buffer zone to the process volume through the final valve situated in an open state.
- Each of the reservoir valve and the final valve is switched to a closed state.
- a buffer gas is supplied to the buffer zone through a buffer valve situated in an open state.
- the buffer gas is diverted to a foreline through a divert valve situated in an open state.
- the divert valve is switched to a closed state and the reservoir valve is switched to a closed state.
- a substrate processing system having a process chamber with a process volume for processing a substrate.
- the process chamber includes a gas inlet and a gas distribution assembly fluidly coupled to the gas inlet.
- the gas distribution assembly includes a vaporizer, a reservoir with an upstream end in fluid communication with the vaporizer, and a reservoir valve in fluid communication with a downstream end of the reservoir.
- a final valve is disposed downstream of the reservoir valve.
- a buffer zone is defined between the reservoir valve and the final valve, and a buffer gas inlet is coupled to the buffer zone.
- the buffer gas inlet is coupled to a buffer valve.
- FIG. 1 depicts a schematic representation of a precursor delivery system in accordance with embodiments of the present disclosure
- FIG. 2 depicts a flow diagram of a method for delivering precursors in accordance with embodiments of the present disclosure
- FIGs. 3A-3D depict a schematic representation of a precursor delivery system at various stages of a method for distributing gases in accordance with embodiments of the present disclosure.
- FIG. 4 depicts a graphical representation of pressures along a precursor delivery system at various stages of a method for delivering precursors in accordance with embodiments of the present disclosure.
- Embodiments of the present disclosure provide a precursor delivery system having stable precursor delivery from a vaporizer to a process chamber.
- the delivery system enhances throughput, improves processing efficiency, reduces waste of precursor, and reduces condensation along a precursor delivery line.
- One or more embodiments of the present disclosure are described with respect to an atomic layer deposition chamber. Flowever, the precursor delivery system is useful in other types of process chambers, such as plasma etch chambers, chemical vapor deposition chambers, implant chambers, or other chambers.
- the precursor delivery system described herein provides accurate flow timing control, and reduced condensation resulting in pressure drops along a delivery line, such that flows may be pulsed quickly in a manner that have little to no flow rate settling time resulting in very stable precursor delivery that promotes process uniformity and reduction of defects.
- the precursor delivery system does not rely on dumping precursors into a foreline as contemplated in other gas delivery systems resulting in less precursor waste.
- FIG. 1 depicts a schematic representation of a precursor delivery system 100.
- the system 100 includes a vaporizer 102.
- Liquid precursor is supplied to the vaporizer 102 through a liquid flow controller (LFC) 120.
- other fluids are supplied to the vaporizer 102, such as carrier gas via gas source 121.
- a reservoir 104 is in fluid communication with the vaporizer 102, such that the reservoir 104 is coupled to a downstream end of the vaporizer 102.
- a refill valve 122 is disposed at the upstream end of the reservoir 104.
- precursor is supplied to the reservoir 104 directly from the vaporizer 102 without a refill valve 122.
- Other delivery systems do not use reservoirs to deliver precursors.
- a reservoir valve 126 is disposed downstream of the reservoir 104.
- a first pressure gauge 152 is disposed at the downstream end of the reservoir 104 and upstream of the reservoir valve 126.
- a second pressure gauge 154 is disposed downstream of the reservoir valve 126.
- a bypass line having a bypass valve 124 disposed thereon fluidly couples the gas line upstream of refill valve 122 and downstream of the reservoir valve 126, such as downstream of the second pressure gauge 154 (not shown) or upstream of the second pressure gauge 154. The bypass line enables precursor to be conveyed to the process chamber 106 bypassing the reservoir 104.
- a buffer zone 130 is defined between the reservoir valve 126 and a final valve 128.
- the second pressure gauge 154 is coupled to the buffer zone 130.
- a first gas inlet 140 is coupled to the buffer zone 130 and a buffer valve 132.
- the first gas inlet 140 is capable of delivering buffer gases such as nitrogen gas, argon gas, or other non reactive gases.
- the buffer valve 132 is a three way valve coupled to an exhaust.
- a foreline 138 is coupled to an exhaust valve 136 and configured to exhaust precursor from the buffer zone 130 to the foreline 138 when the vacuum valve is in an open position.
- the final valve 128 is coupled to the gas line 101 downstream of the exhaust valve 136 and is fluidly coupled to the process chamber 106.
- gas line 144 with valve 146 and gas line 142 with valve 148.
- Each gas line 142, 144 is capable of delivery process gases such as nitrous oxide (N2O), oxygen (O2), argon, or other process gases, including nonreactive gases.
- a filter 129 is coupled to the gas line 101 downstream of the final valve 128. Alternatively, the filter 129 disposed between the vaporizer 102 and the reservoir 104.
- the final valve 128 is a three-way valve operable to divert precursor to a foreline 150. In some embodiments, foreline 150 is used instead of foreline 138 to exhaust precursor.
- the final valve 128 is a two- way valve and is not coupled to a foreline 150.
- the gas line 101 is coupled to the process chamber 106 at inlet 109.
- the precursor is distributed over a substrate 112 disposed on a substrate support 108 within a process volume 114 of the process chamber 106.
- the precursor is distributed using a gas delivery assembly 110.
- the precursor delivery system 100 depicted in FIG. 1 is useful for delivering precursors to the process chamber 106 in accordance to methods such as method 200 described with reference to FIG. 2. Certain operations of method 200 are depicted with reference to FIGs. 3A-3D.
- a precursor is supplied to a reservoir 104 until the reservoir 104 reaches a first pressure.
- the first pressure is measured by a first pressure gauge 152 disposed a downstream end of the reservoir 104.
- a buffer pressure as measured by the second pressure gauge 154 is slightly lower than the reservoir pressure as measured by the first pressure gauge 152.
- the precursor is supplied to the buffer zone when the second pressure is substantially the same or about 10% lower, such as 1 % to about 10% lower than the first pressure of the reservoir.
- the precursor is supplied from a vaporizer 102 through a refill valve 122 disposed at an upstream end of the reservoir 104.
- the precursor is supplied from the vaporizer 102 directly to the reservoir 104 either without a refill valve 122, or with refill valve 122 at a constant open state.
- supplying the precursor to the reservoir include positioning a liquid flow controller (LFC) in an open state, the LFC disposed upstream of the reservoir, such as upstream of the vaporizer 102.
- LFC liquid flow controller
- the precursor is supplied from the reservoir 104 to a buffer zone through reservoir valve 126 situated in an open state, as shown in FIG. 3A.
- the buffer zone is defined between the reservoir valve and a final valve.
- the buffer valve 132 and the divert valve 136 each remain in a closed state.
- the final valve 128 is situated in a closed state.
- the precursor is supplied from the buffer zone to the process volume through the final valve situated in an open state, as shown in FIG. 3A.
- the final valve 128 is switched from a closed state to an open state substantially simultaneously with switching the reservoir valve 126 from a closed state to an open state, such that operations 204 and 206 occur substantially simultaneously with one another.
- the buffer gas is discharged to low pressure and draws precursor to flow with reduced pressure drop. Operations 204 and 206 occur for about 100 msec to about 2 sec, such as about 300 msec to 5 msec, depending on process recipe.
- the buffer gas is any non-reactive gas, such as a nitrogen containing gas, such as nitrogen gas (N2).
- the buffer gas includes argon gas.
- each of the reservoir valve 126 and final valve 128 are switched to a closed state, as shown in FIG. 3B.
- the reservoir valve 126 and the final valve 128 are both closed at substantially the same time in order to stop precursor flow.
- a buffer gas is supplied to the buffer zone through a buffer valve 132 situated in an open state, also shown in FIG. 3B.
- the buffer gas is diverted to a foreline through a divert valve 136 situated in an open state, shown in FIG. 3B.
- operations 208, 210, and 212 occur substantially simultaneously with one another.
- the residual precursor in the buffer zone is diverted to exhaust.
- the reservoir valve 126 and the final valve 128 are in a closed state for about 0.5 sec, to about 3 sec, such as about 1 sec to about 2 sec in operation 208.
- the buffer gas is supplied to the buffer zone through the buffer valve 132 and diverted through the divert valve 136 for about 50 msec to about 550 msec, such as about 100 msec to about 500 msec, in operations 210 and 212. Operations 210 and 212 occur entirely simultaneously with one another, or at least partially simultaneously with one another.
- operation 214 begins when the buffer zone is substantially free of precursor.
- the reservoir pressure increases when the reservoir valve is closed.
- a pressure within the reservoir is controlled using the refill valve 122 disposed upstream of the reservoir 104.
- a refill valve 122 is switched to a closed state when the pressure of the reservoir exceeds a predetermined pressure.
- the refill valve 122 is switched to an open state when the pressure of the reservoir drops below a predetermined pressure.
- the refill valve 122 and the LFC 120 are switched to an open state so that precursor refills the reservoir, such as during operation 212.
- the refill valve 122 is used to control the reservoir pressure. Without being bound by theory, it is believed that for processes with fast gas exchange, an LFC may have long relative response time that causes cycle-to-cycle pressure variation in the reservoir.
- the refill valve 122 reduces the pressure variation in the reservoir, and instead the pressure variation remains within the vaporizer 102.
- a refill valve 122 is not used, and the LFC 129 is always in an open state and the vaporizer 102 continuously charges the reservoir 104.
- the refill valve 122 is in an open state during all operations 202 to 212.
- the buffer zone pressure is maintained during operations 208, 210, and 212.
- operation 214 the divert valve 136 is switched to a closed state, as shown in FIG. 3C.
- the divert valve 136 is switched to a closed state once the residual precursor is evacuated from the buffer zone.
- the buffer valve 132 remains in an open state to pressurize the buffer zone 130.
- operation 214 occurs for about 0.5 sec to about 2.5 sec, such as about 0.9 sec to about 1.9 sec, such as about 1.2 sec to 1.7 sec depending on process recipe.
- the buffer valve 132 is switched to a closed state as shown in FIG. 3D.
- the buffer valve 132 is switched to a closed state when the buffer zone reaches a predetermined pressure, such as a max design pressure. Condensation, is thus reduced since transient pressure drop is minimized at the reservoir outlet.
- one or more additional gases are supplied through a downstream inlet fluidly coupled to an outlet of the final valve.
- Operations 202 to 216 are repeated cyclically.
- a cycle time from operations 202 to 215 is about 1 .5 sec to about 5 sec, such as about 2 sec to about 3 sec.
- FIG. 4 depicts a graphical representation of pressures along a precursor delivery system at various stages of a method, such as method 200, for delivering precursors in accordance with embodiments of the present disclosure.
- Curve PG1 represents a pressure of the reservoir 104 at the first pressure gauge 152 over time.
- Curve PG2 represents a pressure of the buffer zone 130 at the second pressure gauge 154 over time.
- Curve 402 represents a state of the reservoir valve 126, including a closed state 412 with the reservoir valve is situated in an closed position over time and an open state 422 when the reservoir valve is situated in an open position over time.
- Curve 404 represents a state of the buffer valve 132, including a closed state 414 and an open state 424.
- Curve 406 represents a state of the final valve 128, including a closed state 416 and an open state 426.
- Curve 408 represents a state of the divert valve 136, including a closed state 418 and an open state 428.
- each of the reservoir, buffer, and final valves are in a closed position, such as in operation 202.
- the reservoir pressure (PG1) reaches a design pressure of about 30 torr.
- Other design pressures are also contemplated based on a size of a reservoir and a precursor type, such as pressures of about 20 torr to about 50 torr.
- the reservoir pressure and the buffer zone pressure is substantially equal, such as within 10% of one another.
- the reservoir valve and the final valve are each positioned to an open state while the buffer valve and the divert valve each remain in a closed state as described in operations 204 and 206.
- a pressure of the reservoir and the pressure of the buffer zone are reduced.
- the reservoir valve and the final valve are each switched to a closed state while the buffer valve and the divert valve are each switched to an open state as described in operations 208, 210, and 212.
- the divert valve is switched to a closed state as described in operation 214.
- the reservoir pressure continues to increase and the buffer zone pressure increases between t2 and t3.
- the buffer valve is switched to a closed state as described in operation 216.
- the operations are repeated from to when the pressure of the buffer zone PG2 is substantially equal to or slightly lower than the pressure of the reservoir PG1.
- the reservoir outlet pressure PG1 and the buffer zone pressures PG2 are at all times maintained within 20% of one another, such as within 10%, such as within 5% of one another.
- a precursor delivery system having stable precursor delivery from a vaporizer to a process chamber.
- the delivery system enhances throughput, improves processing efficiency, reduces waste of precursor, and reduces condensation along a precursor delivery line.
- the precursor delivery system described herein provides accurate flow timing control, and reduced condensation caused by pressure drops along a delivery line, such that flows may be pulsed quickly in a manner that have little to no flow rate settling time resulting in very stable precursor delivery that promotes process uniformity and reduction of defects.
- the precursor delivery system does not rely on dumping precursors into a foreline as contemplated in other gas delivery systems resulting in less precursor waste.
- a reservoir and a plurality of valves disposed along the gas line enables enhanced process control by maintaining reservoir and buffer zone pressures each within a predetermined pressure range and, more importantly, within a predetermined pressure range relative to one another.
- the valves are switched between open and closed states.
- Certain areas of the gas line e.g., buffer zone
- buffer gas such as prior to opening the reservoir to the gas line, which reduces pressure drop from the reservoir to the gas line at various stages of processing.
- the switching of each valve from an open state to a closed state is timed based on process recipe, or are automatically switched based on pressure gauge readings within the buffer zone.
- Precursor flow timing control is greatly enhanced and pressure differential across the gas line is also enhanced, reducing condensation associated with pressure drops.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2021/040118 WO2023277920A1 (en) | 2021-07-01 | 2021-07-01 | System and method for delivering precursor to a process chamber |
CN202180100447.4A CN117730167A (en) | 2021-07-01 | 2021-07-01 | System and method for delivering precursors to a process chamber |
JP2023580615A JP2024524401A (en) | 2021-07-01 | 2021-07-01 | Systems and methods for delivering precursors to a processing chamber - Patents.com |
KR1020247003057A KR20240024266A (en) | 2021-07-01 | 2021-07-01 | Systems and methods for delivering precursors to a process chamber |
TW111123837A TW202315961A (en) | 2021-07-01 | 2022-06-27 | System and method for delivering precursor to a process chamber |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2021/040118 WO2023277920A1 (en) | 2021-07-01 | 2021-07-01 | System and method for delivering precursor to a process chamber |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023277920A1 true WO2023277920A1 (en) | 2023-01-05 |
Family
ID=84690576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2021/040118 WO2023277920A1 (en) | 2021-07-01 | 2021-07-01 | System and method for delivering precursor to a process chamber |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2024524401A (en) |
KR (1) | KR20240024266A (en) |
CN (1) | CN117730167A (en) |
TW (1) | TW202315961A (en) |
WO (1) | WO2023277920A1 (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040164089A1 (en) * | 1999-12-11 | 2004-08-26 | Epichem Limited | Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
KR20150128417A (en) * | 2014-05-09 | 2015-11-18 | 한국생산기술연구원 | Liquid Precursor Delivery System |
JP2016100530A (en) * | 2014-11-25 | 2016-05-30 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
US20170167022A1 (en) * | 2015-12-11 | 2017-06-15 | Lg Chem, Ltd. | Apparatus for high speed atomic layer deposition and deposition method using the same |
US20210002767A1 (en) * | 2019-07-05 | 2021-01-07 | Asm Ip Holding B.V. | Liquid vaporizer |
-
2021
- 2021-07-01 JP JP2023580615A patent/JP2024524401A/en active Pending
- 2021-07-01 KR KR1020247003057A patent/KR20240024266A/en unknown
- 2021-07-01 WO PCT/US2021/040118 patent/WO2023277920A1/en active Application Filing
- 2021-07-01 CN CN202180100447.4A patent/CN117730167A/en active Pending
-
2022
- 2022-06-27 TW TW111123837A patent/TW202315961A/en unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040164089A1 (en) * | 1999-12-11 | 2004-08-26 | Epichem Limited | Method and apparatus for delivering precursors to a plurality of epitaxial reactor sites |
KR20150128417A (en) * | 2014-05-09 | 2015-11-18 | 한국생산기술연구원 | Liquid Precursor Delivery System |
JP2016100530A (en) * | 2014-11-25 | 2016-05-30 | 東京エレクトロン株式会社 | Substrate processing apparatus, substrate processing method, and storage medium |
US20170167022A1 (en) * | 2015-12-11 | 2017-06-15 | Lg Chem, Ltd. | Apparatus for high speed atomic layer deposition and deposition method using the same |
US20210002767A1 (en) * | 2019-07-05 | 2021-01-07 | Asm Ip Holding B.V. | Liquid vaporizer |
Also Published As
Publication number | Publication date |
---|---|
KR20240024266A (en) | 2024-02-23 |
CN117730167A (en) | 2024-03-19 |
TW202315961A (en) | 2023-04-16 |
JP2024524401A (en) | 2024-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5527863B2 (en) | Semiconductor device manufacturing method and substrate processing apparatus | |
US10340125B2 (en) | Pulsed remote plasma method and system | |
US6911092B2 (en) | ALD apparatus and method | |
US10364496B2 (en) | Dual section module having shared and unshared mass flow controllers | |
JP3947126B2 (en) | Semiconductor manufacturing equipment | |
US20100266765A1 (en) | Method and apparatus for growing a thin film onto a substrate | |
US20080160214A1 (en) | Substrate processing apparatus | |
US20080145533A1 (en) | Substrate processing apparatus and substrate processing method | |
KR101015985B1 (en) | Substrate processing apparatus | |
CN109576674B (en) | Atomic layer deposition apparatus | |
EP4321648A1 (en) | Plasma enhanced atomic layer deposition apparatus and method | |
US20080026148A1 (en) | Film Forming System And Method For Forming Film | |
WO2023277920A1 (en) | System and method for delivering precursor to a process chamber | |
TWI821363B (en) | Precursor delivery system | |
KR100935289B1 (en) | Substrate processing apparatus and substrate processing method | |
JP4543848B2 (en) | Semiconductor manufacturing apparatus and maintenance method thereof | |
US11566327B2 (en) | Methods and apparatus to reduce pressure fluctuations in an ampoule of a chemical delivery system | |
JP5060375B2 (en) | Substrate processing apparatus and semiconductor device manufacturing method | |
KR20120011582A (en) | Depositing apparatus having vaporizer and depositing method | |
KR101066138B1 (en) | Substrate processing apparatus and method of manufacturing semiconductor device | |
KR102318221B1 (en) | Substrate processing apparatus and substrate processing method | |
WO2023076686A1 (en) | Degas system using inert purge gas at controlled pressure for a liquid delivery system of a substrate processing system | |
KR20240036899A (en) | Method for forming passivation layer for preventing particle generation | |
KR20240019568A (en) | Gas supply apparatus, gas supply method, and substrate processing system having the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21948667 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2023580615 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202180100447.4 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 20247003057 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 21948667 Country of ref document: EP Kind code of ref document: A1 |