WO2023273584A1 - Laser chip having modulator, preparation method, and optical module - Google Patents

Abstract

A laser chip (600) having a modulator, a preparation method, and an optical module (200). The laser chip (600) having a modulator comprises: an N electrode layer (610), an N-type semiconductor material layer (620), an active layer (630), an upper waveguide layer (640), and a P-type semiconductor material layer (650). The laser chip (600) having a modulator further comprises: a first ridge waveguide groove (671) penetrating to the N-type semiconductor material layer (620); a second ridge waveguide groove (672) penetrating to the N-type semiconductor material layer (620), a ridge waveguide (670) being provided between the second ridge waveguide groove (672) and the first ridge waveguide groove (671); a first passivation layer (661) covering the P-type semiconductor material layer (650) provided on one side of the ridge waveguide (670) and the inside of the first ridge waveguide groove (671); a second passivation layer (662) covering the P-type semiconductor material layer (650) provided on the other side of the ridge waveguide (670) and the inside of the second ridge waveguide groove (672); a first P electrode layer (683) provided on a second passivation layer (662) on the P-type semiconductor material layer (650); a second P electrode layer (681) provided on the ridge waveguide (670); a suspension electrode (682) suspended on the second ridge waveguide groove (672) and electrically connected to the first P electrode layer (683) and the second P electrode layer (681).

Description

Laser chip with modulator, preparation method and optical module

This disclosure claims the priority of a patent submitted to the China Patent Office on June 29, 2021 with application number 202110726600.6, the entire contents of which are incorporated in this disclosure by reference.

technical field

The present disclosure relates to the technical field of optical communication, in particular to a laser chip with a modulator, a preparation method and an optical module.

Background technique

With the rapid development of the Internet of Things, big data and cloud computing technology, the amount of data communication required for information interaction has shown explosive growth, and the fiber optic communication technology that has emerged has become the preferred technology for high-speed information transmission. The requirements for the transmission rate of a single device are also getting higher and higher. High-speed lasers with modulators are the core components of future information technology.

Contents of the invention

In a first aspect, the present disclosure provides a laser chip with a modulator, and the laser chip with a modulator is used for an optical module. The laser chip with modulator includes: N electrode layer, N-type semiconductor material layer, active layer, upper waveguide layer, P-type semiconductor material layer, first ridge waveguide groove, second ridge waveguide groove, first A passivation layer, a second passivation layer, a first P electrode layer, a second P electrode layer and a suspension electrode. The N electrode layer is located at the bottom of the laser chip with the modulator. The N-type semiconductor material layer is disposed on the N-electrode layer. The active layer is disposed on the N-type semiconductor material layer. The upper waveguide layer is disposed on the active layer. The P-type semiconductor material layer is disposed on the upper waveguide layer. The first ridge waveguide trench penetrates from the top to the N-type semiconductor material layer. The second ridge waveguide groove penetrates from the top to the N-type semiconductor material layer, and a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove. The first passivation layer covers the top of the P-type semiconductor material layer disposed on one side of the ridge waveguide and the inside of the first ridge waveguide groove. The second passivation layer is disposed on the other side of the ridge waveguide above the P-type semiconductor material layer and inside the groove of the second ridge waveguide. The first P electrode layer is disposed on the second passivation layer above the P-type semiconductor material layer. The second P-electrode layer is disposed on the ridge waveguide. The suspension electrode is suspended on the second ridge waveguide groove, one end of the suspension electrode is electrically connected to the first P electrode layer, and the other end of the suspension electrode is electrically connected to the second P electrode layer.

In a second aspect, the present disclosure provides a method for preparing a laser chip with a modulator, the method is used for preparing the laser chip with a modulator described in the first aspect. The method includes: sequentially forming an active layer, an upper waveguide layer and a P-type semiconductor material layer on one side of the N-type semiconductor material layer; etching from the top of the P-type semiconductor material layer to the N-type semiconductor material layer A first ridge waveguide groove and a second ridge waveguide groove are formed, and a ridge waveguide is formed between the first ridge waveguide groove and the second ridge waveguide groove; above the P-type semiconductor material layer, the A passivation layer is arranged in the first ridge waveguide groove and the second ridge waveguide groove; the passivation layer on the top of the ridge waveguide is removed to form the first passivation layer on one side of the ridge waveguide, and the other A second passivation layer is formed on the second passivation layer; a first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide; the filling in the groove of the second ridge waveguide is removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer; removing the removable material suspends the electrode to A suspension electrode is formed above the second ridge waveguide groove; an N electrode layer is formed on the other side of the N-type semiconductor material layer.

In a third aspect, the present disclosure provides a laser chip with a modulator, and the laser chip with a modulator is used in an optical module. The laser chip with modulator includes: N electrode layer, N-type semiconductor material layer, active layer, upper waveguide layer, P-type semiconductor material layer, first ridge waveguide groove, second ridge waveguide groove, first A passivation layer, a second passivation layer, a first P electrode layer, a second P electrode layer and a suspension electrode. The N electrode layer is located at the bottom of the laser chip with the modulator. The N-type semiconductor material layer is disposed on the N-electrode layer. The active layer is disposed on the N-type semiconductor material layer. The upper waveguide layer is disposed on the active layer. The P-type semiconductor material layer is disposed on the upper waveguide layer. The first ridge waveguide trench penetrates from the top to the P-type semiconductor material layer. The second ridge waveguide groove penetrates from the top to the P-type semiconductor material layer, and a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove. The first passivation layer covers the top of the P-type semiconductor material layer disposed on one side of the ridge waveguide and the inside of the first ridge waveguide groove. The second passivation layer is disposed on the other side of the ridge waveguide above the P-type semiconductor material layer and inside the groove of the second ridge waveguide. The first P electrode layer is disposed on the second passivation layer above the P-type semiconductor material layer. The second P-electrode layer is disposed on the ridge waveguide. The suspension electrode is suspended on the second ridge waveguide groove, one end of the suspension electrode is electrically connected to the first P electrode layer, and the other end of the suspension electrode is electrically connected to the second P electrode layer.

In a fourth aspect, the present disclosure provides a method for preparing a laser chip with a modulator, the method is used to prepare the laser chip with a modulator described in the third aspect. The method includes: sequentially forming an active layer, an upper waveguide layer and a P-type semiconductor material layer on one side of the N-type semiconductor material layer; etching from the top of the P-type semiconductor material layer to the P-type semiconductor material layer A first ridge waveguide groove and a second ridge waveguide groove are formed, and a ridge waveguide is formed between the first ridge waveguide groove and the second ridge waveguide groove; above the P-type semiconductor material layer, the A passivation layer is arranged in the first ridge waveguide groove and the second ridge waveguide groove; the passivation layer on the top of the ridge waveguide is removed to form the first passivation layer on one side of the ridge waveguide, and the other A second passivation layer is formed on the second passivation layer; a first P electrode layer is formed on the second passivation layer, and a second P electrode layer is formed on the ridge waveguide; the filling in the groove of the second ridge waveguide is removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer; removing the removable material suspends the electrode to A suspension electrode is formed above the second ridge waveguide groove; an N electrode layer is formed on the other side of the N-type semiconductor material layer.

In a fifth aspect, the present disclosure provides a laser chip with a modulator, and the laser chip with a modulator is used in an optical module. The laser chip with modulator includes: N electrode layer, N-type semiconductor material layer, active layer, upper waveguide layer, P-type semiconductor material layer, first ridge waveguide groove, second ridge waveguide groove, first A passivation layer, a second passivation layer, a first P electrode layer, a second P electrode layer and a fourth P electrode layer. The N electrode layer is located at the bottom of the laser chip with modulator. The N-type semiconductor material layer is disposed on the N-electrode layer. The active layer is disposed on the N-type semiconductor material layer. The upper waveguide layer is disposed on the active layer. The P-type semiconductor material layer is disposed on the upper waveguide layer. The first ridge waveguide trench penetrates from the top to the N-type semiconductor material layer. The second ridge waveguide groove penetrates from the top to the N-type semiconductor material layer, and a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove. The first passivation layer covers the top of the P-type semiconductor material layer disposed on one side of the ridge waveguide and the inside of the first ridge waveguide groove. The second passivation layer is disposed on the other side of the ridge waveguide above the P-type semiconductor material layer and inside the groove of the second ridge waveguide. The first P electrode layer is disposed on the second passivation layer above the P-type semiconductor material layer. The second P-electrode layer is disposed on the ridge waveguide. The fourth P electrode layer is disposed on the second passivation layer in the second ridge waveguide groove, one end of the fourth P electrode layer is electrically connected to the first P electrode layer, and the first P electrode layer is electrically connected to the first P electrode layer. The other end of the four P electrode layers is electrically connected to the second P electrode layer.

In a sixth aspect, the present disclosure provides a method for preparing a laser chip with a modulator, which is used to prepare the laser described in the fifth aspect. The method includes: sequentially forming an active layer, an upper waveguide layer and a P-type semiconductor material layer on one side of the N-type semiconductor material layer; etching from the top of the P-type semiconductor material layer to the N-type semiconductor material layer A first ridge waveguide groove and a second ridge waveguide groove are formed, and a ridge waveguide is formed between the first ridge waveguide groove and the second ridge waveguide groove; above the P-type semiconductor material layer, the A passivation layer is arranged in the first ridge waveguide groove and the second ridge waveguide groove; the passivation layer on the top of the ridge waveguide is removed to form the first passivation layer on one side of the ridge waveguide, and the other A second passivation layer is formed on the side; a first P electrode layer is formed on the second passivation layer, a second P electrode layer is formed on the ridge waveguide above the P-type semiconductor material layer; a second P electrode layer is formed on the second ridge A fourth P electrode layer is formed on the second passivation layer in the waveguide trench to electrically connect the first P electrode layer and the second P electrode layer; on the other side of the N-type semiconductor material layer An N electrode layer is formed.

In a seventh aspect, the present disclosure provides an optical module. The optical module includes: a circuit board and a light emitting component. The light emitting component is electrically connected to the circuit board, the light emitting component is used to generate and output signal light, and the light emitting component includes a laser. The laser includes the laser chip with a modulator according to the first aspect, the third aspect or the fifth aspect; or the laser chip with a modulator prepared by the preparation method described in the second aspect, the fourth aspect or the sixth aspect.

Description of drawings

In order to illustrate the technical solutions in the present disclosure more clearly, the following will briefly introduce the accompanying drawings used in some embodiments of the present disclosure. Apparently, the accompanying drawings in the following description are only appendices to some embodiments of the present disclosure. Figures, for those of ordinary skill in the art, other drawings can also be obtained based on these drawings. In addition, the drawings in the following description can be regarded as schematic diagrams, and are not limitations on the actual size of the product involved in the embodiments of the present disclosure, the actual process of the method, the actual timing of signals, and the like.

Fig. 1 is a connection diagram of an optical communication system according to some embodiments;

Fig. 2 is a structural diagram of an optical network terminal according to some embodiments;

Fig. 3 is a structural diagram of an optical module according to some embodiments;

Figure 4 is an exploded view of an optical module according to some embodiments;

Fig. 5 is a schematic diagram of the internal structure of an optical module according to some embodiments;

Fig. 6 is an outline structure diagram of a light emitting sub-module according to some embodiments;

Fig. 7 is a schematic structural diagram of separation of a tube base and a tube cap in a light emitting component according to some embodiments;

Fig. 8 is a schematic structural diagram of a laser device according to some embodiments;

Fig. 9 is a schematic structural diagram of a laser chip with a modulator according to some embodiments;

Fig. 10 is a schematic cross-sectional structure diagram of a laser chip with a modulator according to some embodiments;

Figure 11 is a block diagram of a laser chip with a modulator according to some embodiments;

12 is a schematic structural diagram of another laser chip with a modulator according to some embodiments;

Fig. 13 is a schematic cross-sectional structure diagram of another laser chip with a modulator according to some embodiments;

Fig. 14 is a schematic structural diagram of yet another laser chip with a modulator according to some embodiments;

Fig. 15 is a schematic cross-sectional structure diagram of a third laser chip with a modulator according to some embodiments.

detailed description

The technical solutions in some embodiments of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present disclosure, not all of them. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments provided in the present disclosure belong to the protection scope of the present disclosure.

Throughout the specification and claims, unless the context requires otherwise, the term "comprise" and other forms such as the third person singular "comprises" and the present participle "comprising" are used Interpreted as the meaning of openness and inclusion, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific examples" example)" or "some examples (some examples)" etc. are intended to indicate that specific features, structures, materials or characteristics related to the embodiment or examples are included in at least one embodiment or example of the present disclosure. Schematic representations of the above terms are not necessarily referring to the same embodiment or example. Furthermore, the particular features, structures, materials or characteristics described may be included in any suitable manner in any one or more embodiments or examples.

In describing the present disclosure, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", The orientations or positional relationships indicated by "top", "bottom", "inner", "outer", etc. are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying References to devices or elements must have a particular orientation, be constructed, and operate in a particular orientation and therefore should not be construed as limiting the present disclosure.

Hereinafter, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

In describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. For example, the term "connected" may be used in describing some embodiments to indicate that two or more elements are in direct physical or electrical contact with each other. As another example, the term "coupled" may be used when describing some embodiments to indicate that two or more elements are in direct physical or electrical contact. However, the terms "coupled" or "communicatively coupled" may also mean that two or more elements are not in direct contact with each other, but yet still co-operate or interact with each other. The embodiments disclosed herein are not necessarily limited by the context herein.

"At least one of A, B and C" has the same meaning as "at least one of A, B or C" and both include the following combinations of A, B and C: A only, B only, C only, A and B A combination of A and C, a combination of B and C, and a combination of A, B and C.

"A and/or B" includes the following three combinations: A only, B only, and a combination of A and B.

The use of "configured to" herein means open and inclusive language that does not exclude devices configured to perform additional tasks or steps.

As used herein, "about", "approximately" or "approximately" includes the stated value as well as the average within the acceptable deviation range of the specified value, wherein the acceptable deviation range is as determined by one of ordinary skill in the art. Determined taking into account the measurement in question and the errors associated with the measurement of a particular quantity (ie, limitations of the measurement system).

In optical communication technology, light is used to carry information to be transmitted, and the optical signal carrying information is transmitted to information processing equipment such as a computer through optical fiber or optical waveguide and other information transmission equipment to complete the information transmission. Because optical signals have passive transmission characteristics when they are transmitted through optical fibers or optical waveguides, low-cost, low-loss information transmission can be achieved. In addition, the signals transmitted by information transmission equipment such as optical fibers or optical waveguides are optical signals, while the signals that can be recognized and processed by information processing equipment such as computers are electrical signals. To establish an information connection between them, it is necessary to realize the mutual conversion of electrical signals and optical signals.

The optical module is used in the technical field of optical fiber communication to realize the mutual conversion function of the above-mentioned optical signal and electrical signal. The optical module includes an optical port and an electrical port. The optical module realizes optical communication with information transmission equipment such as optical fiber or optical waveguide through the optical port, and realizes the electrical connection with the optical network terminal (such as an optical modem) through the electrical port. It is mainly configured to implement power supply, I2C signal transmission, data signal transmission, and grounding. Optical network terminals transmit electrical signals to information processing equipment such as computers through network cables or wireless fidelity technology (Wi-Fi).

Fig. 1 is a connection diagram of an optical communication system according to some embodiments. As shown in FIG. 1 , the optical communication system mainly includes a remote server 1000 , a local information processing device 2000 , an optical network terminal 100 , an optical module 200 , an optical fiber 101 and a network cable 103 .

One end of the optical fiber 101 is connected to the remote server 1000 , and the other end is connected to the optical network terminal 100 through the optical module 200 . Optical fiber itself can support long-distance signal transmission, such as signal transmission of several kilometers (6 kilometers to 8 kilometers). On this basis, if repeaters are used, ultra-long-distance transmission can theoretically be achieved. Therefore, in a common optical communication system, the distance between the remote server 1000 and the optical network terminal 100 can usually reach thousands of kilometers, tens of kilometers or hundreds of kilometers.

One end of the network cable 103 is connected to the local information processing device 2000 , and the other end is connected to the optical network terminal 100 . The local information processing device 2000 may be any one or more of the following devices: routers, switches, computers, mobile phones, tablet computers, televisions, and so on.

The physical distance between the remote server 1000 and the optical network terminal 100 is greater than the physical distance between the local information processing device 2000 and the optical network terminal 100 . The connection between the local information processing device 2000 and the remote server 1000 is completed by the optical fiber 101 and the network cable 103 ; and the connection between the optical fiber 101 and the network cable 103 is completed by the optical module 200 and the optical network terminal 100 .

The optical module 200 includes an optical port and an electrical port. The optical port is configured to be connected to the optical fiber 101, so that the optical module 200 establishes a bidirectional optical signal connection with the optical fiber 101; electrical signal connection. The optical module 200 can realize mutual conversion between an optical signal and an electrical signal, so that a connection is established between the optical fiber 101 and the optical network terminal 100 . For example, the optical signal from the optical fiber 101 is converted into an electrical signal by the optical module 200 and then input to the optical network terminal 100 , and the electrical signal from the optical network terminal 100 is converted into an optical signal by the optical module 200 and input to the optical fiber 101 .

The optical network terminal 100 includes a substantially rectangular parallelepiped housing (housing), and an optical module interface 102 and a network cable interface 104 disposed on the housing. The optical module interface 102 is configured to be connected to the optical module 200 , so that the optical network terminal 100 establishes a bidirectional electrical signal connection with the optical module 200 . The network cable interface 104 is configured to access the network cable 103 , so that the optical network terminal 100 establishes a bidirectional electrical signal connection with the network cable 103 . A connection is established between the optical module 200 and the network cable 103 through the optical network terminal 100 . For example, the optical network terminal 100 transmits the electrical signal from the optical module 200 to the network cable 103, and transmits the signal from the network cable 103 to the optical module 200, so the optical network terminal 100, as the host computer of the optical module 200, can monitor the optical module 200 work. In addition to the optical network terminal 100, the host computer of the optical module 200 may also include an optical line terminal (Optical Line Terminal, OLT) and the like.

The remote server 1000 establishes a two-way signal transmission channel with the local information processing device 2000 through the optical fiber 101 , the optical module 200 , the optical network terminal 100 and the network cable 103 .

Fig. 2 is a structural diagram of an optical network terminal according to some embodiments. In order to clearly show the connection relationship between the optical module 200 and the optical network terminal 100 , FIG. 2 only shows the structure of the optical network terminal 100 related to the optical module 200 . As shown in FIG. 2 , the optical network terminal 100 also includes a PCB circuit board 105 disposed in the casing, a cage 106 disposed on the surface of the PCB circuit board 105 , an electrical connector and a radiator 107 disposed inside the cage 106 . The electrical connector is configured to be connected to an electrical port of the optical module 200 . The heat sink 107 has protrusions such as fins that increase the heat dissipation area.

The optical module 200 is inserted into the cage 106 of the optical network terminal 100 , and the optical module 200 is fixed by the cage 106 . The heat generated by the optical module 200 is conducted to the cage 106 and then diffused through the radiator 107 . After the optical module 200 is inserted into the cage 106 , the electrical port of the optical module 200 is connected to the electrical connector inside the cage 106 , so that the optical module 200 establishes a bidirectional electrical signal connection with the optical network terminal 100 . In addition, the optical port of the optical module 200 is connected to the optical fiber 101 , so that the optical module 200 and the optical fiber 101 establish a bidirectional electrical signal connection.

Fig. 3 is a structural diagram of an optical module according to some embodiments, and Fig. 4 is an exploded view of an optical module according to some embodiments. As shown in FIGS. 3 and 4 , the optical module 200 includes an upper housing 201 , a lower housing 202 , a circuit board 203 , a round and square tube 300 , a light emitting component 400 and a light receiving component 500 .

The case includes an upper case 201 and a lower case 202 . The upper case 201 is closed on the lower case 202 to form the above-mentioned case with two openings 204 and 205 . The outer contour of the casing generally presents a square body.

In some embodiments of the present disclosure, the lower case 202 includes a bottom plate and two lower side plates located on both sides of the bottom plate and perpendicular to the bottom plate; The two upper side plates are combined by two side walls and two side plates to realize that the upper case 201 is covered on the lower case 202 .

The direction of the line connecting the two openings 204 and 205 may be consistent with the length direction of the optical module 200 , or may not be consistent with the length direction of the optical module 200 . For example, the opening 204 is located at the end of the optical module 200 (the right end in FIG. 3 ), and the opening 205 is also located at the end of the optical module 200 (the left end in FIG. 3 ). Alternatively, the opening 204 is located at the end of the optical module 200 , while the opening 205 is located at the side of the optical module 200 . The opening 204 is an electrical port, and the golden finger of the circuit board 203 is extended from the electrical port, and inserted into the host computer (such as the optical network terminal 100); the opening 205 is an optical port, configured to connect to the external optical fiber 101, so that the optical fiber 101 inside of the optical module 200 .

The combination of the upper case 201 and the lower case 202 is used to facilitate the installation of components such as the circuit board 203 into the case, and the upper case 201 and the lower case 202 can form packaging protection for these devices. In addition, when assembling components such as the circuit board 203 , it is convenient to deploy positioning components, heat dissipation components and electromagnetic shielding components of these components, which is conducive to automatic implementation of production.

In some embodiments, the upper shell 201 and the lower shell 202 are generally made of metal materials, which is beneficial to realize electromagnetic shielding and heat dissipation.

In some embodiments, the optical module 200 further includes an unlocking component 206 located on the outer wall of its casing, and the unlocking component 206 is configured to realize a fixed connection between the optical module 200 and the host computer, or release the connection between the optical module 200 and the host computer. fixed connection.

Exemplarily, the unlocking component 206 is located on the outer walls of the two lower side panels of the lower housing 202 , and includes an engaging component matching with a cage of the upper computer (eg, the cage 106 of the optical network terminal 100 ). When the optical module 200 is inserted into the cage of the host computer, the optical module 200 is fixed in the cage of the host computer by the engaging part of the unlocking part 206; when the unlocking part 206 is pulled, the engaging part of the unlocking part 206 moves accordingly, thereby changing The connection relationship between the engaging part and the host computer is to release the engagement relationship between the optical module 200 and the host computer, so that the optical module 200 can be pulled out from the cage of the host computer.

The circuit board 203 includes circuit traces, electronic components and chips, through which the electronic components and chips are connected together according to the circuit design, so as to realize functions such as power supply, electrical signal transmission and grounding. The electronic components may include, for example, capacitors, resistors, transistors, and metal-oxide-semiconductor field-effect transistors (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET). The chip can include, for example, a Microcontroller Unit (MCU), a Limiting Amplifier (Limiting Amplifier), a Clock and Data Recovery chip (CDR), a power management chip, and a Digital Signal Processing (DSP) chip. .

The circuit board 203 is generally a rigid circuit board. Due to its relatively hard material, the rigid circuit board can also realize the bearing function. For example, the rigid circuit board can carry the chip smoothly; the rigid circuit board can also be inserted into the electrical connector in the cage of the host computer.

The circuit board 203 also includes a golden finger formed on the surface of its end, and the golden finger is composed of a plurality of independent pins. The circuit board 203 is inserted into the cage 106 and electrically connected with the electrical connector in the cage 106 by the gold finger. Gold fingers can be arranged only on one side of the circuit board 203 (such as the upper surface shown in FIG. 4 ), or on the upper and lower sides of the circuit board 203, so as to meet the occasions where the number of pins is large. The golden finger is configured to establish an electrical connection with the host computer to realize power supply, grounding, I2C signal transmission, data signal transmission, etc. Of course, flexible circuit boards are also used in some optical modules. Flexible circuit boards are generally used in conjunction with rigid circuit boards as a supplement to rigid circuit boards.

As shown in FIG. 4 , the interior of the optical module 200 includes a round and square tube body 300 , a light emitting component 400 and a light receiving component 500 . Both the light emitting component 400 and the light receiving component 500 are disposed on the round and square tube body 300 . The light emitting component 400 is used to generate and output signal light, and the light receiving component 500 is used to receive signal light from the outside of the optical module. A fiber optic adapter is arranged on the round square tube body 300, and the fiber optic adapter is used to realize the connection between the optical module and the external optical fiber, and the round square tube body 300 is usually provided with a lens assembly, and the lens assembly is used to change the output signal light of the light emitting assembly 400 or the external optical fiber. Propagation direction of optical fiber input signal light. The light emitting assembly 400 and the light receiving assembly 500 are physically separated from the circuit board 203, so it is difficult for the light emitting assembly 400 and the light receiving assembly 500 to be directly connected to the circuit board 203, so in some embodiments of the present disclosure, the light emitting assembly 400 and the light receiving assembly 500 The electrical connection is respectively realized through the flexible circuit board. However, the assembly structure of the light-emitting assembly 400 and the light-receiving assembly 500 is not limited to the structure shown in FIG. 3 and FIG. This embodiment only takes the structure shown in FIG. 3 and FIG. 4 as an example.

Fig. 5 is a schematic diagram of an internal structure of an optical module according to some embodiments. As shown in Figure 5, the light emitting assembly 400 is arranged on the round square tube body 300 and is coaxial with the fiber optic adapter of the round square tube body 300, and the light receiving assembly 500 is arranged on the side of the round square tube body 300, which is not connected with the fiber optic adapter coaxial. However, in some embodiments of the present disclosure, an arrangement in which the light receiving component 500 is coaxial with the fiber adapter and the light emitting component 400 is not coaxial with the fiber adapter may be adopted. Passing the light emitting component 400 and the light receiving component 500 through the round and square tube body 300, on the one hand, it is convenient to realize the control of the signal light transmission optical path, on the other hand, it is convenient to realize the compact design inside the optical module, and reduce the space occupied by the signal light transmission optical path. In addition, with the development of wavelength division multiplexing technology, in some optical modules, more than one light emitting component 400 and light receiving component 500 can be arranged on the round square tube body 300 .

In some embodiments of the present disclosure, a mirror is also arranged in the round square tube body 300, and the propagation direction of the signal light to be received by the light receiving component 500 is changed through the mirror, or the direction of the signal light of the signal light generated by the light emitting component 400 is changed. The propagation direction is convenient for the light receiving component 500 to receive the signal light or output the signal light generated by the light emitting component 400 .

Fig. 6 is an outline structure diagram of a light emitting sub-module according to some embodiments. As shown in FIG. 6 , the light emitting component 400 includes a tube base 410 , a tube cap 420 and other devices disposed in the tube cap 420 and the tube base 410 . The tube cap 420 is set on one end of the tube base 410, and the tube base 410 includes several pins, and the pins are used to realize the electrical connection between the flexible circuit board and other electrical devices in the light emitting assembly 400, thereby realizing the connection between the light emitting assembly 400 and the circuit. For the electrical connection of the board 203, this embodiment only takes the structure shown in FIG. 6 as an example.

Fig. 7 is a schematic structural diagram of the separation of the tube base and the tube cap in a light emitting component according to some embodiments. As shown in FIG. 7 , the light emitting component 400 includes a laser device 430 , the laser device 430 is used to generate signal light and the generated signal light passes through the tube cap 420 . The laser device 430 shown in FIG. 7 includes DML or EML or the like.

Fig. 8 is a schematic structural diagram of a laser device according to some embodiments. As shown in Figure 8, the laser device 430 includes a laser chip 600 with a modulator and a ceramic substrate 431, the upper surface of the ceramic substrate 431 is laid with a circuit, and the laser chip 600 with the modulator is connected to the corresponding circuit on the ceramic substrate 431 by bonding . The ceramic substrate 431 and the bonding wires between the laser chip 600 with the modulator and the ceramic substrate 431 are packaging structures. In some embodiments of the present disclosure, the structure of the laser device 430 is not limited to the structure shown in FIG. 8 , and may also be a laser device with other structural forms. In addition, the arrangement of the laser chip 600 with the modulator is not limited to that shown in FIG. on or in other packaging forms.

The high-speed performance and modulation efficiency of the laser chip 600 with the modulator is one of the important factors affecting the transmission rate of the optical module. In order to increase the transmission rate of the optical module, some embodiments of the present disclosure provide a laser chip with a modulator 600, which can be used to combine the high-speed performance of the laser chip with a modulator and the optimization of modulation efficiency.

FIG. 9 is a schematic structural diagram of a laser chip with a modulator according to some embodiments. FIG. 9 shows the basic structure of a laser chip with a modulator 600 in some embodiments of the present disclosure. As shown in FIG. 9 , a laser chip 600 with a modulator includes: an N electrode layer 610 , an N-type semiconductor material layer 620 , an active layer 630 , an upper waveguide layer 640 and a P-type semiconductor material layer 650 . One side of N-type semiconductor material layer 620 is provided with N electrode layer 610, and N electrode layer 610 is the bottom of laser chip 600 with modulator, and the other side of N-type semiconductor material layer 620 is provided with active layer 630, and active layer 630 Above is the upper waveguide layer 640 , and a P-type semiconductor material layer 650 is disposed above the upper waveguide layer 640 .

Fig. 10 is a schematic cross-sectional structure diagram of a laser chip with a modulator according to some embodiments. As shown in Fig. 9 and Fig. 10, the laser chip 600 with the modulator is provided with a first ridge waveguide groove 671 and a second ridge waveguide groove 672, and the first ridge waveguide groove 671 and the second ridge waveguide groove 672 A ridge waveguide 670 is formed therebetween; the bottom of the first ridge waveguide groove 671 and the bottom of the second ridge waveguide groove 672 are provided with an upper waveguide layer 640 on the active layer 630 . The top of the ridge waveguide 670 is the window for current injection. The first ridge waveguide groove 671 and the second ridge waveguide groove 672 are formed by etching. When etching the first ridge waveguide groove 671 and the second ridge waveguide groove 672 in FIG. 9 and FIG. The active layer 630 ensures the integrity of the active layer 630 to form a shallow ridge waveguide structure.

As shown in FIG. 9 and FIG. 10 , the laser chip 600 with a modulator provided by some embodiments of the present disclosure further includes a first passivation layer 661 and a second passivation layer 662; the first passivation layer 661 covers the ridge above the P-type semiconductor material layer 650 on one side of the waveguide 670 and in the first ridge waveguide trench 671; the second passivation layer 662 covers the top of the P-type semiconductor material layer 650 and the second inside the ridge waveguide groove 672 . The second P electrode layer 681 is set above the ridge waveguide 670, the first P electrode layer 683 is set on the second passivation layer 662 above the P-type semiconductor material layer 650, and the suspension electrode 682 is suspended above the second ridge waveguide groove 672. , the floating electrode 682 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681 .

In some embodiments of the present disclosure, the N-type semiconductor material layer 620 can be formed by epitaxial growth of N-type semiconductor materials, and the active layer 630 can be epitaxially grown on the N-type semiconductor material layer 620 by using AlGaInAs multiple quantum well materials, etc. The upper waveguide layer 640 can be epitaxially grown on the active layer 630 by using AlGaInAs materials, etc., and the P-type semiconductor material layer 650 can be formed by epitaxially growing on the upper waveguide layer 640 by using P-type semiconductor materials; the first passivation layer 661 and the second passivation layer 662 can use silicon dioxide, silicon nitride, silicon oxygen nitrogen or organic materials, etc.; the N electrode layer 610 and the first P electrode layer 683, the second P electrode layer 681 and the suspension electrode 682 can use Formed by metal evaporation; the first ridge waveguide trench 671 and the second ridge waveguide trench 672 can be formed by wet etching, dry etching, or a combination of wet etching and dry etching.

In some embodiments of the present disclosure, as shown in FIG. 9 , the laser chip 600 with a modulator further includes a third P electrode layer 684, the third P electrode layer 684 is disposed on the ridge waveguide 670, and the upper waveguide layer 640 includes P-type grating layer, so as to form a DFB laser in the area covered by the third P electrode layer 684 . The area covered by the second P electrode layer 681 forms an electroabsorption modulator, and the laser chip 600 with a modulator provided in some embodiments of the present disclosure is an EML.

FIG. 11 is a structure diagram of a laser chip with a modulator according to some embodiments. The difference from the structure of the laser chip 600 with a modulator shown in FIG. An electrode 685 is used between the first P electrode layer 683 disposed on the second passivation layer 662. The electrode 685 is in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide trench 672. The traditional electrode form is convenient for fabrication. However, in the laser chip 600 with a modulator shown in FIG. The larger the contact area between the bottom and the sidewall of the 672, the larger the parasitic capacitance generated during electrical injection.

In the laser chip 600 with a modulator provided in some embodiments of the present disclosure, a floating electrode 682 is used to electrically connect the first P electrode layer 683 and the second P electrode layer 681, and the floating electrode 682 straddles the second ridge waveguide groove 672 and It is not in contact with the second passivation layer 662 on the bottom and sidewall of the second ridge waveguide groove 672, and then when the electric injection is performed to the ridge waveguide 670 through the floating electrode 682, because the floating electrode 682 is not in contact with the second ridge waveguide groove The bottom of 672 is in contact with the second passivation layer 662 on the side wall. Compared with the laser chip with modulator using the traditional electrode structure, the laser chip 600 with modulator provided in this embodiment greatly reduces the electrode The parasitic capacitance generated when covering the bottom and sidewalls of the groove of the ridge waveguide achieves the effect of increasing the rate of the laser chip 600 with the modulator.

In order to facilitate the preparation of the laser chip 600 with a modulator provided in the above embodiment, some embodiments of the present disclosure also provide a method for preparing a laser chip with a modulator, which is used for the laser chip 600 with a modulator in the above embodiment preparation. The above method for preparing a laser chip with a modulator includes:

An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

Etch from the top of the P-type semiconductor material layer to the P-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

A passivation layer is disposed above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench;

removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

forming a first P-electrode layer on the second passivation layer, and forming a second P-electrode layer on the ridge waveguide;

filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer;

removing the removable material to suspend the electrode to form a suspended electrode over the second ridge waveguide trench;

An N electrode layer is formed on the other side of the N-type semiconductor material layer.

During the formation of the suspension electrode 682 , it is necessary to fill the second ridge waveguide trench with a removable material (such as photoresist) before evaporating the electrode. When evaporating the electrodes to form the suspended electrodes 682, the electrodes do not drop into the second ridge waveguide trenches, but onto the removable material. After the electrode evaporation is completed, the removable material is removed to form a suspended electrode 682 spanning above the trench.

FIG. 12 is a schematic structural diagram of another laser chip with a modulator according to some embodiments. FIG. 12 shows the basic structure of a laser chip with a modulator 600 in some embodiments of the present disclosure. As shown in Figure 12, the laser chip 600 with modulator also includes: N electrode layer 610, N-type semiconductor material layer 620, active layer 630, upper waveguide layer 640 and P-type semiconductor material layer 650, and it is shown in Figure 12 The arrangement of is the same as that in the laser chip 600 with modulator shown in FIG. 9 .

Fig. 13 is a schematic cross-sectional structure diagram of another laser chip with a modulator according to some embodiments. As shown in Figure 12 and Figure 13, the laser chip 600 with the modulator is also provided with a first ridge waveguide groove 671 and a second ridge waveguide groove 672, the first ridge waveguide groove 671 and the second ridge waveguide groove Ridge waveguide 670 is formed between 672 . However, in this embodiment, the bottom of the first ridge waveguide trench 671 and the bottom of the second ridge waveguide trench 672 are provided with the N-type semiconductor material layer 620 below the active layer 630 . When etching the first ridge waveguide groove 671 and the second ridge waveguide groove 672 shown in FIG. 12 and FIG. 13 , it is necessary to etch through the active layer 630 so that the active layer 630 is no longer complete to form deep ridges. The structure of the waveguide.

As shown in FIG. 12 and FIG. 13 , the laser chip 600 with the modulator also includes a first passivation layer 661 and a second passivation layer 662 . The first passivation layer 661 covers the top of the P-type semiconductor material layer 650 arranged on one side of the ridge waveguide 670 and the first ridge waveguide groove 671; the second passivation layer 662 covers the P-type semiconductor material layer 650 arranged on the other side of the ridge waveguide 670. type semiconductor material layer 650 and in the second ridge waveguide trench 672 . The second P electrode layer 681 is set above the ridge waveguide 670, the first P electrode layer 683 is set on the second passivation layer 662 above the P-type semiconductor material layer 650, and the fourth P electrode layer is laid in the second ridge waveguide groove 672. 686 , the fourth P electrode layer 686 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681 . The fourth P electrode layer 686 is in contact with the second passivation layer 662 on the bottom and sidewalls of the second ridge waveguide trench 672 .

The laser chip 600 with modulator shown in FIG. 12 and FIG. 13 is different from the laser chip 600 with modulator shown in FIG. 9 in that, in the laser chip 600 with modulator shown in FIG. 12 and FIG. The fourth P electrode layer 686 is laid in the two ridge waveguide grooves 672 to electrically connect the first P electrode layer 683 and the second P electrode layer 681, and the first ridge waveguide groove 671 and the second ridge waveguide groove 672 are etched. When it reaches below the active layer 630 , the active layer 630 is no longer continuous and complete. However, the laser chip 600 with a modulator provided in this example cuts through the active layer 630 through the first ridge waveguide groove 671 and the second ridge waveguide groove 672, so that the active layer 630 is no longer continuous and complete, so that the optical field It is more strongly confined in the active layer 630 to achieve the effect of increasing the confinement ratio of the light field in the active layer 630 . The optical field confinement ratio is an important parameter in the design of lasers and modulators, and an increase in the ratio is very beneficial to the modulation efficiency of the laser. For DML, increasing the ratio of optical field limitation directly increases the resonant frequency, thus improving device bandwidth and modulation rate; for EML, increasing the ratio of optical field limitation directly improves the absorption efficiency of the optical field, thereby increasing the equivalent voltage swing The lower extinction ratio; for the MZ modulator, increasing the optical field confinement ratio can directly increase the change of the overall effective refractive index with the voltage change, thereby improving the phase modulation efficiency. Therefore, carving the first ridge waveguide groove 671 and the second ridge waveguide groove 672 through the active layer 630 in the laser chip 600 with the modulator can improve the laser chip with the modulator on the basis of the traditional electrode structure. The speed of the laser chip.

In some embodiments of the present disclosure, as shown in FIG. 12 , the laser chip 600 with the modulator further includes a third P electrode layer 684 , and the third P electrode layer 684 is disposed on the ridge waveguide 670 . The upper waveguide layer 640 includes a P-type grating layer, so that a DFB laser is formed in the area covered by the third P-electrode layer 684; and an electro-absorption modulator is formed in the area covered by the second P-electrode layer 681, and some embodiments of the present disclosure provide a The laser chip 600 of the modulator is an EML.

In order to facilitate the preparation of the laser chip 600 with a modulator provided in the above embodiment, some embodiments of the present disclosure also provide a method for preparing a laser chip with a modulator, which is used for the preparation of the laser chip 600 with a modulator in the above embodiment . The above method for preparing a laser chip with a modulator includes:

An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

Etch from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

A passivation layer is disposed above the P-type semiconductor material layer, in the first ridge waveguide trench and in the second ridge waveguide trench;

removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

forming a first P electrode layer on the second passivation layer, and forming a second P electrode layer on the ridge waveguide above the P-type semiconductor material layer;

forming a fourth P electrode layer on the second passivation layer in the second ridge waveguide trench to electrically connect the first P electrode layer and the second P electrode layer;

An N electrode layer is formed on the other side of the N-type semiconductor material layer.

FIG. 14 is a schematic structural diagram of another laser chip with a modulator according to some embodiments. FIG. 14 shows the basic structure of a laser chip with a modulator 600 in some embodiments of the present disclosure. As shown in Figure 14, the laser chip 600 with modulator also includes: N electrode layer 610, N-type semiconductor material layer 620, active layer 630, upper waveguide layer 640 and P-type semiconductor material layer 650, and it is shown in Figure 14 The arrangement of is the same as that in the laser chip 600 with modulator shown in FIG. 9 .

Fig. 15 is a schematic cross-sectional structure diagram of a third laser chip with a modulator according to some embodiments. As shown in Figure 14 and Figure 15, the laser chip 600 with the modulator is also provided with a first ridge waveguide groove 671 and a second ridge waveguide groove 672, the first ridge waveguide groove 671 and the second ridge waveguide groove Ridge waveguide 670 is formed between 672 . But in this embodiment, the bottom of the first ridge waveguide trench 671 and the bottom of the second ridge waveguide trench 672 are located in the N-type semiconductor material layer 620 below the active layer 630 . When etching the first ridge waveguide groove 671 and the second ridge waveguide groove 672 shown in FIG. 14 and FIG. 15 , it is necessary to etch through the active layer 630 so that the active layer 630 is no longer complete to form deep ridges. The structure of the waveguide.

As shown in FIG. 14 and FIG. 15 , the laser chip 600 with the modulator also includes a first passivation layer 661 and a second passivation layer 662 . The first passivation layer 661 covers the top of the P-type semiconductor material layer 650 arranged on one side of the ridge waveguide 670 and the first ridge waveguide groove 671; the second passivation layer 662 covers the P-type semiconductor material layer 650 arranged on the other side of the ridge waveguide 670. type semiconductor material layer 650 and in the second ridge waveguide trench 672 . The second P electrode layer 681 is set above the ridge waveguide 670, the first P electrode layer 683 is set on the second passivation layer 662 above the P-type semiconductor material layer 650, and the fourth P electrode layer is laid in the second ridge waveguide groove 672. 686, the fourth P electrode layer 686 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681, the suspension electrode 682 is suspended above the second ridge waveguide groove 672, and the suspension electrode 682 is electrically connected to the first P electrode layer 683 and the second P electrode layer 681.

In the laser chip 600 with a modulator provided in some embodiments of the present disclosure, a floating electrode 682 is used to electrically connect the first P electrode layer 683 and the second P electrode layer 681, and the floating electrode 682 straddles the second ridge waveguide groove 672 and It is not in contact with the second passivation layer 662 on the bottom and sidewalls of the second ridge waveguide trench 672 . At the same time, through the first ridge waveguide groove 671 and the second ridge waveguide groove 672, the active layer 630 is cut through, so that the active layer 630 is no longer continuous and complete, so that the optical field is more strongly restricted in the active layer 630 In this way, the effect of increasing the limiting ratio of the light field in the active layer 630 is achieved. Therefore, in the laser chip 600 with a modulator provided in this example, the floating electrode 682 is combined with the first ridge waveguide groove 671 and the second ridge waveguide groove 672 to cut through the active layer 630, so that the floating electrode 682 is formed from the first The two ridge waveguide grooves 672 straddle, while the deep ridge waveguide improves the performance of the device, the rate of the laser chip with the modulator can be further improved, and it can effectively avoid the need for more metal coverage of the deep ridge waveguide to increase the capacitance reduction rate. contradiction.

In some embodiments of the present disclosure, as shown in FIG. 14 , the laser chip 600 with the modulator further includes a third P electrode layer 684 , and the third P electrode layer 684 is disposed on the ridge waveguide 670 . The upper waveguide layer 640 includes a P-type grating layer, so that a DFB laser is formed in the area covered by the third P-electrode layer 684; and an electro-absorption modulator is formed in the area covered by the second P-electrode layer 681, and some embodiments of the present disclosure provide a The laser chip 600 of the modulator is an EML.

In order to facilitate the preparation of the laser chip 600 with a modulator provided in the above embodiment, some embodiments of the present disclosure also provide a method for preparing a laser chip with a modulator, which is used for the preparation of the laser chip 600 with a modulator in the above embodiment . The above method for preparing a laser chip with a modulator includes:

An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

Etch from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

A passivation layer is disposed above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench;

removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

forming a first P-electrode layer on the second passivation layer, and forming a second P-electrode layer on the ridge waveguide;

filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer;

removing the removable material to suspend the electrode to form a suspended electrode over the second ridge waveguide trench;

An N electrode layer is formed on the other side of the N-type semiconductor material layer.

The above is only a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Anyone familiar with the technical field who thinks of changes or substitutions within the technical scope of the present disclosure should cover all within the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be determined by the protection scope of the claims.

Claims (10)

1. A laser chip with a modulator for an optical module, the laser chip with a modulator includes:

   The N electrode layer at the bottom;

   an N-type semiconductor material layer disposed on the N-electrode layer;

   an active layer disposed on the N-type semiconductor material layer;

   an upper waveguide layer disposed on the active layer;

   a P-type semiconductor material layer disposed on the upper waveguide layer;

   a first ridge waveguide trench penetrating from the top to the N-type semiconductor material layer;

   a second ridge waveguide groove penetrating from the top to the N-type semiconductor material layer, a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove;

   A first passivation layer, covering above the P-type semiconductor material layer disposed on one side of the ridge waveguide and in the groove of the first ridge waveguide;

   A second passivation layer, covering and disposed above the P-type semiconductor material layer on the other side of the ridge waveguide and in the groove of the second ridge waveguide;

   a first P electrode layer disposed on the second passivation layer above the P-type semiconductor material layer;

   a second P electrode layer disposed on the ridge waveguide;

   The suspension electrode is suspended above the second ridge waveguide groove, one end of the suspension electrode is electrically connected to the first P electrode layer, and the other end of the suspension electrode is electrically connected to the second P electrode layer.
2. The laser chip with modulator according to claim 1, wherein the upper waveguide layer comprises a P-type grating layer;

   The laser chip with modulator also includes:

   The third P electrode layer is disposed on the ridge waveguide and above the P-type grating layer, and one end of the third P electrode layer is disposed on the first passivation layer and extends to the ridge waveguide Above the P-type semiconductor material layer on one side, the other end of the third P electrode layer is arranged on the second passivation layer and extends to the P-type semiconductor material layer on one side of the ridge waveguide above.
3. A laser chip with a modulator for an optical module, the laser chip with a modulator includes:

   The N electrode layer at the bottom;

   an N-type semiconductor material layer disposed on the N-electrode layer;

   an active layer disposed on the N-type semiconductor material layer;

   an upper waveguide layer disposed on the active layer;

   a P-type semiconductor material layer disposed on the upper waveguide layer;

   a first ridge waveguide trench penetrating from the top to the P-type semiconductor material layer;

   A second ridge waveguide groove, penetrating from the top to the P-type semiconductor material layer, a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove;

   A first passivation layer, covering above the P-type semiconductor material layer disposed on one side of the ridge waveguide and in the groove of the first ridge waveguide;

   A second passivation layer, covering and disposed above the P-type semiconductor material layer on the other side of the ridge waveguide and in the groove of the second ridge waveguide;

   a first P electrode layer disposed on the second passivation layer above the P-type semiconductor material layer;

   a second P electrode layer disposed on the ridge waveguide;

   The suspension electrode is suspended above the second ridge waveguide groove, one end of the suspension electrode is electrically connected to the first P electrode layer, and the other end of the suspension electrode is electrically connected to the second P electrode layer.
4. The laser chip with a modulator according to claim 3, wherein the upper waveguide layer comprises a P-type grating layer;

   The laser chip with modulator also includes:

   The third P electrode layer is arranged on the ridge waveguide, one end of the third P electrode layer is arranged on the first passivation layer and extends to the P-type semiconductor material layer on one side of the ridge waveguide The other end of the third P electrode layer is disposed on the second passivation layer and extends to the top of the P-type semiconductor material layer on one side of the ridge waveguide.
5. A laser chip with a modulator for an optical module, the laser chip with a modulator includes:

   The N electrode layer at the bottom;

   an N-type semiconductor material layer disposed on the N-electrode layer;

   an active layer disposed on the N-type semiconductor material layer;

   an upper waveguide layer disposed on the active layer;

   a P-type semiconductor material layer disposed on the upper waveguide layer;

   a first ridge waveguide trench penetrating from the top to the N-type semiconductor material layer;

   a second ridge waveguide groove penetrating from the top to the N-type semiconductor material layer, a ridge waveguide is arranged between the second ridge waveguide groove and the first ridge waveguide groove;

   A first passivation layer, covering above the P-type semiconductor material layer disposed on one side of the ridge waveguide and in the groove of the first ridge waveguide;

   A second passivation layer, covering and disposed above the P-type semiconductor material layer on the other side of the ridge waveguide and in the groove of the second ridge waveguide;

   a first P electrode layer disposed on the second passivation layer above the P-type semiconductor material layer;

   a second P electrode layer disposed on the ridge waveguide;

   The fourth P electrode layer is arranged on the second passivation layer in the second ridge waveguide groove, one end of the fourth P electrode layer is electrically connected to the first P electrode layer, and the fourth P electrode layer is electrically connected to the first P electrode layer. The other end of the P electrode layer is electrically connected to the second P electrode layer.
6. The laser chip with modulator according to claim 5, wherein the upper waveguide layer comprises a P-type grating layer;

   The laser chip with modulator also includes:

   The third P electrode layer is disposed on the ridge waveguide, one end of the third P electrode layer is disposed on the first passivation layer and extends to the P-type semiconductor material layer on one side of the ridge waveguide The other end of the third P electrode layer is disposed on the second passivation layer and extends above the P-type semiconductor material layer on one side of the ridge waveguide.
7. A method for preparing a laser chip with a modulator, wherein the method is used to prepare the laser chip with a modulator according to claim 1, the method comprising:

   An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

   Etch from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

   A passivation layer is disposed above the P-type semiconductor material layer, in the first ridge waveguide trench and in the second ridge waveguide trench;

   removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

   forming a first P-electrode layer on the second passivation layer, and forming a second P-electrode layer on the ridge waveguide;

   filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer;

   removing the removable material to suspend the electrode to form a suspended electrode over the second ridge waveguide trench;

   An N electrode layer is formed on the other side of the N-type semiconductor material layer.
8. A method for preparing a laser chip with a modulator, wherein the method is used to prepare the laser chip with a modulator according to claim 3, the method comprising:

   An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

   Etch from the top of the P-type semiconductor material layer to the P-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

   A passivation layer is disposed above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench;

   removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

   forming a first P-electrode layer on the second passivation layer, and forming a second P-electrode layer on the ridge waveguide;

   filling the second ridge waveguide groove with a removable material, forming an electrode on the removable material and electrically connecting the electrode to the first P electrode layer and the second P electrode layer;

   removing the removable material to suspend the electrode to form a suspended electrode over the second ridge waveguide trench;

   An N electrode layer is formed on the other side of the N-type semiconductor material layer.
9. A method for preparing a laser chip with a modulator, wherein the method is used to prepare the laser chip with a modulator according to claim 5, the method comprising:

   An active layer, an upper waveguide layer, and a P-type semiconductor material layer are sequentially formed on one side of the N-type semiconductor material layer;

   Etch from the top of the P-type semiconductor material layer to the N-type semiconductor material layer to form a first ridge waveguide groove and a second ridge waveguide groove, the first ridge waveguide groove and the second ridge waveguide A ridge waveguide is formed between the grooves;

   A passivation layer is disposed above the P-type semiconductor material layer and in the first ridge waveguide trench and the second ridge waveguide trench;

   removing the passivation layer at the top of the ridge waveguide to form a first passivation layer on one side of the ridge waveguide and a second passivation layer on the other side;

   forming a first P electrode layer on the second passivation layer, and forming a second P electrode layer on the ridge waveguide above the P-type semiconductor material layer;

   forming a fourth P electrode layer on the second passivation layer in the second ridge waveguide trench to electrically connect the first P electrode layer and the second P electrode layer;

   An N electrode layer is formed on the other side of the N-type semiconductor material layer.
10. An optical module, comprising:

    circuit board;

    a light emitting component, electrically connected to the circuit board, used to generate and output signal light, including a laser;

    Wherein, the laser includes the laser chip with modulator according to any one of claims 1-6 or the laser chip with modulator prepared by the preparation method according to any one of claims 7-9.

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