WO2023272572A1 - Élément de conversion photoélectrique et dispositif de détection d'image à semi-conducteur - Google Patents

Élément de conversion photoélectrique et dispositif de détection d'image à semi-conducteur Download PDF

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Publication number
WO2023272572A1
WO2023272572A1 PCT/CN2021/103476 CN2021103476W WO2023272572A1 WO 2023272572 A1 WO2023272572 A1 WO 2023272572A1 CN 2021103476 W CN2021103476 W CN 2021103476W WO 2023272572 A1 WO2023272572 A1 WO 2023272572A1
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Prior art keywords
photoelectric conversion
light
conversion element
solid
sensing device
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PCT/CN2021/103476
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English (en)
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Hidekazu Takahashi
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Huawei Technologies Co., Ltd.
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Priority to PCT/CN2021/103476 priority Critical patent/WO2023272572A1/fr
Publication of WO2023272572A1 publication Critical patent/WO2023272572A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H01L27/14669—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures

Definitions

  • the present disclosure relates to a photoelectric conversion element that is capable to photoelectrically convert infrared light and a solid-state image sensing device using the photoelectric conversion element.
  • a CMOS image sensor (CIS) that is generally used as a solid-state image sensing device has photodiodes formed of silicon (Si) .
  • Si has a band gap of about 1.1 eV, which is capable to photoelectrically convert light having a wavelength of 1100 nm or less, for example, visible light, however, it is not capable to photoelectrically convert light having a wavelength of 1100 nm or greater, for example, short-wave infrared (SWIR) light (having a wavelength from 1.4 to 3 ⁇ m) .
  • SWIR short-wave infrared
  • a photoelectric conversion element using a compound semiconductor such as InGaAs having a narrower band gap than Si is known.
  • a photoelectric conversion element with a stacking structure in which a compound semiconductor chip is bonded onto a read-out IC (ROIC) chip manufactured in a CMOS process through bump bonding or the like is generally used.
  • a photoelectric conversion element for detecting infrared light is configured by stacking a quantum dot film directly on a silicon wafer manufactured in a CMOS process using, for example, spin coating. Since such a photoelectric conversion element for detecting infrared light using a quantum dot film does not require bump bonding or hybrid bonding that are used in bonding of a compound semiconductor, it can have narrower pitches between the pixels to increase resolution and can be manufactured at a low cost because of the use of silicon wafers.
  • a quantum dot film has a large amount of dark current and requires a special correlated double sampling (CDS) circuit to remove reset noise generated when pixels are reset, and thus it is hard to apply to use by consumers in reality. For this reason, infrared imaging with a low light amount has a problem that imaging with high image quality is difficult. The problem that removal of reset noise is difficult also arises in a photoelectric conversion element using a compound semiconductor such as InGaAs.
  • CDS correlated double sampling
  • the present disclosure aims to provide a photoelectric conversion element that enables a high-quality infrared image to be captured even if a silicon photodiode that can be manufactured at a low cost is used, and a solid-state image sensing device using the photoelectric conversion element.
  • a photoelectric conversion element has a silicon photodiode layer configured to photoelectrically convert visible light having a wavelength in a visible light region, and a photon up-conversion film (which will be referred to as an “up-conversion film” below) formed to be stacked on a light input side of the silicon photodiode layer and configured to convert a wavelength in an infrared region into a visible region.
  • a photon up-conversion film which will be referred to as an “up-conversion film” below
  • a photoelectric conversion element including a silicon photodiode layer that is not capable of photoelectrically converting infrared light can detect infrared light by converting infrared light into visible light with the up-conversion film and performing photoelectric conversion thereon with the silicon photodiode layer.
  • a photoelectric conversion element capable of detecting infrared light using an inexpensive silicon photodiode device can be provided at a low cost.
  • the up-conversion film may contain at least one of an organic erbium complex, an organic osmium complex, rubrene, and anthracene.
  • the up-conversion film may contain at least one of cadmium, selenium, and zinc sulfide as a sensitizing material.
  • a cold mirror film configured to transmit infrared light and reflect visible light may be formed to be overlapped with the up-conversion film.
  • a microlens configured to condense incident infrared light may be formed to be overlapped with the up-conversion film.
  • a solid-state image sensing device includes a plurality of the arrayed photoelectric conversion elements described in each of the above aspects.
  • one pixel may be formed by combining the photoelectric conversion element and three primary color photoelectric conversion elements each of which is configured to absorb light in the wavelength range of any color among three primary colors of light and perform photoelectric conversion.
  • the solid-state image sensing device may be combined with an infrared light projector to configure a distance measuring device that uses a time-of-flight method.
  • the present disclosure it is possible to provide a photoelectric conversion element that enables a high-quality infrared image to be captured even if a silicon photodiode that can be manufactured at a low cost is used and a solid-state imaging device using the photoelectric conversion element.
  • Fig. 1 is an enlarged cross-sectional view of main parts of a solid-state image sensing device configured to have photoelectric conversion elements according to a first embodiment of the present disclosure.
  • Fig. 2 is an illustration drawing illustrating an action of the photoelectric conversion element 10 according to the present embodiment.
  • Fig. 3 is an enlarged cross-sectional view of main parts of a solid-state image sensing device including photoelectric conversion elements according to a second embodiment of the present disclosure.
  • Fig. 4 is an enlarged cross-sectional view of main parts of a solid-state image sensing device including a photoelectric conversion element according to a third embodiment of the present disclosure.
  • Fig. 5 is a plan view of a solid-state image sensing device according to a fourth embodiment of the present disclosure.
  • Fig. 1 is an enlarged cross-sectional view of main parts of a solid-state image sensing device including photoelectric conversion elements according to a first embodiment of the present disclosure.
  • the solid-state image sensing device 1 includes a plurality of photoelectric conversion elements 10 arrayed at a predetermined pitch.
  • Fig. 1 illustrating the present embodiment, two photoelectric conversion elements 10 and 10 are exemplified.
  • Each photoelectric conversion element 10 has, in order from the lower layer side in Fig. 1, a CMOS image sensor (CIS) 13 including a silicon photodiode layer (photoelectric conversion layer) 11 and a light-transmitting multilayered interlayer film 12, an up-conversion film 14 formed to be overlapped with the multilayered interlayer film 12, and a microlens 15 formed to be overlaid on the up-conversion film 14.
  • CIS CMOS image sensor
  • the photoelectric conversion elements 10 according to the present embodiment are of a front-side illumination (FSI) type in which the multilayered interlayer film 12 is formed on the side on which light (infrared light) is incident from the outside toward the silicon photodiode layer 11.
  • FSI front-side illumination
  • the silicon photodiode layer (photoelectric conversion layer) 11 has a PN junction of a P-type semiconductor and an N-type semiconductor, which is consisted by using, for example, a silicon wafer.
  • the silicon photodiode layer 11 formed in this manner uses silicon (Si) and thus can be easily manufactured at a lower cost, compared to a photodiode layer using a compound semiconductor.
  • the silicon photodiode layer 11 can photoelectrically convert light in the visible light range (with a wavelength of 360 nm to 950 nm) (i.e. visible light) because it uses silicon (Si) .
  • the silicon photodiode layer (photoelectric conversion layer) 11 is partitioned by a light-shielding metal wall (partition wall) 16 to separate each photoelectric conversion element 10 from adjacent photoelectric conversion elements 10.
  • This metal wall 16 prevents light incident on each photoelectric conversion element 10 from becoming stray light and being incident on the silicon photodiode layer 11 of an adjacent photoelectric conversion element 10.
  • the partition wall may be formed using a low refraction material.
  • the multilayered interlayer film 12 has a multilayer structure including wiring layers 17 and interlayer insulating films 18 formed for each photoelectric conversion element 10, and the interlayer insulating film 18 can transmit visible light.
  • the wiring layer 17 may be composed of a metal. Light incident on the silicon photodiode layer 11 passes through a gap amid wiring formed in the multilayered interlayer film 12 due to a light condensing action of the microlens 15.
  • the up-conversion film 14 is an optical functional film that converts light in the infrared range (having a wavelength of 0.8 ⁇ m to 2.0 ⁇ m) (i.e. infrared light) into visible light.
  • the up-conversion film 14 according to the present embodiment converts short-wave infrared light (SWIR having a wavelength of 1.4 ⁇ m to 1.8 ⁇ m) incident from the microlens 15 side into light having a color from green to red (having a wavelength of 500 nm to 800 nm) and emits the light from the multilayered interlayer film 12 side.
  • SWIR short-wave infrared light
  • the up-conversion film 14 described above is composed of a specific organic compound including donor molecules that enter an excited triplet state after absorbing light and then function as a sensitizer and acceptor molecules that receive triplet energy transferred from the donor molecules, then enter an excited singlet state, and function as a luminous body.
  • the up-conversion film 14 include, for example, an organic erbium complex, an organic osmium complex, rubrene (5, 6, 11, 12-tetraphenyltetracene) , anthracene, and the like.
  • the up-conversion film 14 may preferably contain cadmium, selenium, zinc sulfide, or the like as a sensitizing material.
  • the sensitizing material described above can improve efficiency of the conversion of the incident SWIR into green light.
  • the microlens 15 condenses infrared light incident from the outside on the photoelectric conversion element 10 to cause the infrared light to be incident on the up-conversion film 14 and thereby detection sensitivity is enhanced.
  • a position of focus of the microlens 15 described above may be, for example, on a surface of the silicon photodiode layer 11.
  • Fig. 2 is an illustrating drawing illustrating an action of the photoelectric conversion element 10 according to the present embodiment.
  • SWIR short-wave infrared
  • the up-conversion film 14 enters an excited triplet state after absorbing the incident infrared light. After that, the up-conversion film 14 enters an excited singlet state after receiving triplet energy transferred from donor molecules, which function as sensitizing materials, and emits the visible light from acceptor molecules. With this configuration, when infrared light is incident from the one surface 14a of the up-conversion film 14, it is emitted as visible light from the other surface 14b.
  • the silicon photodiode layer 11 that can photoelectrically convert the visible light has a depletion layer in which some electrons of the n-type semiconductor are moved to the p-type semiconductor and combine with holes to cancel out the electric charge as is well known.
  • the CIS 13 operates when the converted photoelectric charges are accumulated, transferred, and read.
  • the up-conversion film 14 converts infrared light, for example, SWIR, into visible light, for example, green light, and the silicon photodiode layer 11 performs photoelectric conversion thereon, and thus even a photoelectric conversion element 10 including a silicon photodiode layer 11 that is not capable of performing photoelectric conversion on infrared light can detect infrared light.
  • the photoelectric conversion element 10 including the silicon photodiode layer 11 does not use a compound semiconductor or the like and thus can be easily manufactured at a low cost, and therefore a photoelectric conversion element that can detect infrared light (perform photoelectric conversion) can be provided in a simple structure at a low cost.
  • SWIR is exemplified as infrared light that is incident on the photoelectric conversion element 10 in the present embodiment
  • the invention is not limited thereto, and for example, it may be near infrared light (NIR having a wavelength of about 0.75 ⁇ m to 1.4 ⁇ m) , mid-wave infrared light (MWIR having a wavelength of about 3 ⁇ m to 8 ⁇ m) , or the like.
  • NIR near infrared light
  • MWIR mid-wave infrared light
  • green light is exemplified as visible light converted by the up-conversion film 14 in the present embodiment
  • the invention is not limited thereto, and for example, it may be red light (having a wavelength of about 610 nm to 750 nm) , blue light (having a wavelength of about 435 nm to 480 nm) , or the like of the three primary colors of light, and it is recommended that the light be appropriately selected according to wavelength conversion characteristics of the up-conversion film 14.
  • Fig. 3 is an enlarged cross-sectional view of main parts of a solid-state image sensing device including photoelectric conversion elements according to a second embodiment of the present disclosure. Noted that, the same reference signs are given to constituent elements that are equivalent to those of the first embodiment, and overlapping description is omitted.
  • a solid-state image sensing device 2 has a plurality of photoelectric conversion elements 20 arrayed at a predetermined pitch.
  • Fig. 3 illustrating the present embodiment, two photoelectric conversion elements 20 and 20 are exemplified.
  • Each photoelectric conversion element 20 has, in order from the lower layer side in Fig. 3, a microlens 15, an up-conversion film 14, and a CMOS image sensor (CIS) 13 including a silicon photodiode layer (photoelectric conversion layer) 11 and a light-transmitting multilayered interlayer film 12.
  • CIS CMOS image sensor
  • the photoelectric conversion elements 20 are of a back-side illumination (BSI) type in which the silicon photodiode layer (photoelectric conversion layer) 11 is formed on the microlens 15 side on which light (infrared light) is incident from the outside and the multilayered interlayer film 12 is formed on the side opposite to the side on which light is incident.
  • BSI back-side illumination
  • the up-conversion film 14 converts infrared light, for example, SWIR, into visible light, for example, green light, and the silicon photodiode layer 11 performs photoelectric conversion thereon, and thus even a photoelectric conversion element 20 including a silicon photodiode layer 11 that is not capable of performing photoelectric conversion on infrared light can detect infrared light.
  • the photoelectric conversion element 20 has a BSI-type layer structure, visible light whose wavelength has been converted by the up-conversion film 14 is directly incident on the silicon photodiode layer 11 without passing through the multilayered interlayer film 12, and thus the visible light attenuates less and photoelectric conversion can be performed more efficiently, compared to the FSI type.
  • Fig. 4 is an enlarged cross-sectional view of main parts of a solid-state image sensing device including photoelectric conversion elements according to a third embodiment of the present disclosure. Noted that, the same reference signs are given to constituent elements that are equivalent to those of the first embodiment, and overlapping description is omitted.
  • a solid-state image sensing device 3 has a plurality of photoelectric conversion elements 30 arrayed at a predetermined pitch.
  • Fig. 4 illustrating the present embodiment, two photoelectric conversion elements 30 and 30 are exemplified.
  • Each photoelectric conversion element 30 has, in order from the lower layer side in Fig. 4, a cold mirror 35, an up-conversion film 34, and a CMOS image sensor (CIS) 13 including a silicon photodiode layer (photoelectric conversion layer) 11 and a light-transmitting multilayered interlayer film 12.
  • CMOS image sensor CIS 13 including a silicon photodiode layer (photoelectric conversion layer) 11 and a light-transmitting multilayered interlayer film 12.
  • the photoelectric conversion elements 30 according to the present embodiment are of a back-side illumination (BSI) type in which the silicon photodiode layer (photoelectric conversion layer) 11 is formed on the cold mirror 35 side on which light (light including infrared light) is incident from the outside and the multilayered interlayer film 12 is formed on the side opposite to the side on which light is incident.
  • BSI back-side illumination
  • the photoelectric conversion element 30 includes the cold mirror 35 on the incidence surface on which light (light including infrared light) is incident from the outside.
  • the cold mirror 35 described above is an optical functional film that transmits infrared light and reflects light having a shorter wavelength than infrared light (e.g., visible light) .
  • the photoelectric conversion element 30 is partitioned by a light-shielding metal wall (partition wall) 36 to partition adjacent photoelectric conversion elements 30 to separate the up-conversion film 34 as well as the silicon photodiode layer 11 of the photoelectric conversion element from the layers and films of other photoelectric conversion elements.
  • a light-shielding metal wall (partition wall) 36 partition adjacent photoelectric conversion elements 30 to separate the up-conversion film 34 as well as the silicon photodiode layer 11 of the photoelectric conversion element from the layers and films of other photoelectric conversion elements.
  • the up-conversion film 34 converts infrared light, for example, SWIR, into visible light, for example, green light, and the silicon photodiode layer 11 performs photoelectric conversion thereon, and thus even a photoelectric conversion element 30 including a silicon photodiode layer 11 that is not capable of performing photoelectric conversion on infrared light can detect infrared light.
  • the photoelectric conversion element 30 and the solid-state image sensing device 3 has the cold mirror 35 formed on the surface side on which light from the outside is incident, the visible light converted by the up-conversion film 34 is reflected toward the silicon photodiode layer 11side without being scattered to the outside, and thus detection sensitivity can be improved.
  • both the up-conversion films 34 and the silicon photodiode layers 11 are partitioned by the metal wall 36 for each pixel in the photoelectric conversion elements 30 and the solid-state image sensing device 3 according to the present embodiment, and thus light incident on each photoelectric conversion element 30 can be more reliably prevented from straying to the silicon photodiode layer 11 of an adjacent photoelectric conversion element 30 and being incident thereon.
  • Fig. 5 is a plan view of a solid-state image sensing device according to a fourth embodiment of the present disclosure.
  • the solid-state image sensing device 4 has one pixel P formed with a photoelectric conversion element 10 of the present disclosure that detects infrared light, a green photoelectric conversion element GE that detects green light, a red photoelectric conversion element RE that detects red light, and a blue photoelectric conversion element BE that detects blue light.
  • the photoelectric conversion element 10 may have a similar configuration to that of the first embodiment.
  • the green photoelectric conversion element GE has, for example, a green filter to selectively detect green light included in incident light.
  • the red photoelectric conversion element RE has, for example, a red filter to selectively detect red light included in incident light.
  • the blue photoelectric conversion element BE has, for example, a blue filter to selectively detect blue light included in incident light.
  • the one pixel P is formed with each of the photoelectric conversion elements GE, RE, and BE which can detect three primary colors of light, and the photoelectric conversion element 10 that converts infrared light into visible light (e.g., green light) and detects the light, and therefore, a full-color image and an infrared image can be captured at the same time.
  • the photoelectric conversion elements GE, RE, and BE which can detect three primary colors of light
  • the photoelectric conversion element 10 that converts infrared light into visible light (e.g., green light) and detects the light, and therefore, a full-color image and an infrared image can be captured at the same time.
  • a small-sized full-color/infrared camera can be realized at a low cost because the camera does not need to be equipped with both a solid-state image sensing device for capturing full-color images and a solid-state image sensing device for capturing infrared images respectively as in the related art.
  • Such a full-color/infrared camera is a sensor that is particularly useful for surveillance cameras.
  • the photoelectric conversion element according to the present disclosure can also be applied to, for example, a single photon avalanche diode (SPAD) pixel in addition to the above-described embodiments.
  • An SPAD is used in a stacked-type time-of-flight method distance measuring sensor for in-vehicle LiDAR. Since in-vehicle LiDAR has a photodiode layer formed of silicon, laser light having a wavelength of 940 nm has been used as a light source in the past. In consideration of accuracy in distances, transmitting properties, safety, and resistance to external light, it is preferable to use laser light having a wavelength of 1300 nm. However, the silicon photodiode layer is not capable of photoelectrically converting infrared light having a wavelength of 1300 nm.
  • An inexpensive SPAD pixel that can detect infrared light can be realized by using a photoelectric conversion element with the up-conversion film of the present disclosure, without using an expensive photoelectric conversion element using a compound semiconductor, or the like.
  • a CIS and an SPAD have been exemplified as photoelectric conversion elements in the above-described embodiments, the invention is not limited thereto.
  • a charge-coupled device (CCD) a charge modulation device (CMD) , or JOT (quanta image sensor (QIS)
  • QIS quantum image sensor
  • the invention is not limited to charge accumulation type pixels, and the same effects can be exhibited even when current read-type pixels are used.
  • the embodiments and modified examples thereof are included in the scope and gist of the invention, and at the same time, included in the inventions described in the claims and the scope of equivalents thereof.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

Un élément de conversion photoélectrique comporte une couche de photodiodes au silicium (11) conçue pour convertir de manière photoélectrique de la lumière visible présentant une longueur d'onde dans une région de lumière visible, et un film convertisseur ascendant (14) formé de façon à chevaucher la couche de photodiodes au silicium (11) et conçu pour convertir de la lumière infrarouge, présentant une longueur d'onde dans une région infrarouge, en lumière visible.
PCT/CN2021/103476 2021-06-30 2021-06-30 Élément de conversion photoélectrique et dispositif de détection d'image à semi-conducteur WO2023272572A1 (fr)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0569257A1 (fr) * 1992-05-08 1993-11-10 Nippon Telegraph And Telephone Corporation Matériau de conversion de l'infrarouge en lumière visible et éléments d'identification de la lumière infrarouge le contenant
US20050161703A1 (en) * 2004-01-23 2005-07-28 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
US20060186363A1 (en) * 2005-02-24 2006-08-24 E2V Technologies (Uk) Limited Enhanced spectral range imaging sensor
US20140111652A1 (en) * 2011-06-06 2014-04-24 Nanoholdings, Llc Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
US20180308881A1 (en) * 2017-04-25 2018-10-25 Semiconductor Components Industries, Llc Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities
CN111129053A (zh) * 2019-12-23 2020-05-08 上海集成电路研发中心有限公司 一种cmos图像传感器像素单元结构和形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0569257A1 (fr) * 1992-05-08 1993-11-10 Nippon Telegraph And Telephone Corporation Matériau de conversion de l'infrarouge en lumière visible et éléments d'identification de la lumière infrarouge le contenant
US20050161703A1 (en) * 2004-01-23 2005-07-28 Intevac, Inc. Wavelength extension for backthinned silicon image arrays
US20060186363A1 (en) * 2005-02-24 2006-08-24 E2V Technologies (Uk) Limited Enhanced spectral range imaging sensor
US20140111652A1 (en) * 2011-06-06 2014-04-24 Nanoholdings, Llc Infrared imaging device integrating an ir up-conversion device with a cmos image sensor
US20180308881A1 (en) * 2017-04-25 2018-10-25 Semiconductor Components Industries, Llc Single-photon avalanche diode image sensor with photon counting and time-of-flight detection capabilities
CN111129053A (zh) * 2019-12-23 2020-05-08 上海集成电路研发中心有限公司 一种cmos图像传感器像素单元结构和形成方法

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