WO2023248256A1 - Supercellule photovoltaïque tridimensionnelle et module de supercellules photovoltaïques tridimensionnelles et son procédé de fabrication - Google Patents
Supercellule photovoltaïque tridimensionnelle et module de supercellules photovoltaïques tridimensionnelles et son procédé de fabrication Download PDFInfo
- Publication number
- WO2023248256A1 WO2023248256A1 PCT/IN2023/050612 IN2023050612W WO2023248256A1 WO 2023248256 A1 WO2023248256 A1 WO 2023248256A1 IN 2023050612 W IN2023050612 W IN 2023050612W WO 2023248256 A1 WO2023248256 A1 WO 2023248256A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- photovoltaic
- supercell
- regions
- semiconductor
- photovoltaic cell
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 156
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 229910052751 metal Inorganic materials 0.000 claims abstract description 57
- 239000002184 metal Substances 0.000 claims abstract description 57
- 238000002955 isolation Methods 0.000 claims abstract description 16
- 230000031700 light absorption Effects 0.000 claims abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229920000642 polymer Polymers 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 239000004433 Thermoplastic polyurethane Substances 0.000 claims description 6
- 229920006124 polyolefin elastomer Polymers 0.000 claims description 6
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000009432 framing Methods 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000007792 addition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
La présente invention concerne une supercellule photovoltaïque 3D (100). La supercellule photovoltaïque 3D (100) comprend un substrat semi-conducteur de cellule photovoltaïque tridimensionnelle (3D) (102), une pluralité de régions semi-conductrices (104) alternées et de polarité différente, une pluralité de régions de contact métallique (106), une région d'isolation électrique (108) et une ou plusieurs régions d'isolation physique partielle (110). Chaque région semi-conductrice de la pluralité de régions semi-conductrices alternées et de polarité différente (104) du substrat semi-conducteur de cellule photovoltaïque 3D (102) forme une supercellule solaire (112). La/les région(s) d'isolation physique partielle (110) est/sont configurée(s) pour être positionnée(s) entre la première région semi-conductrice ou une seconde région semi-conductrice et la pluralité de régions de contact métallique (106). La/les région(s) d'isolation physique partielle (110) est/sont en outre configurée(s) pour séparer le substrat semi-conducteur de cellule photovoltaïque 3D (102) en une série de zones d'absorption de lumière et de zones de collecte de charge électrique.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN202231036574 | 2022-06-25 | ||
| IN202231036574 | 2022-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2023248256A1 true WO2023248256A1 (fr) | 2023-12-28 |
Family
ID=89379483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/IN2023/050612 WO2023248256A1 (fr) | 2022-06-25 | 2023-06-25 | Supercellule photovoltaïque tridimensionnelle et module de supercellules photovoltaïques tridimensionnelles et son procédé de fabrication |
Country Status (1)
| Country | Link |
|---|---|
| WO (1) | WO2023248256A1 (fr) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150270410A1 (en) * | 2013-01-11 | 2015-09-24 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
| CN114068729A (zh) * | 2021-11-23 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | 一种双面背接触太阳能电池及其背面结构 |
-
2023
- 2023-06-25 WO PCT/IN2023/050612 patent/WO2023248256A1/fr unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150270410A1 (en) * | 2013-01-11 | 2015-09-24 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
| CN114068729A (zh) * | 2021-11-23 | 2022-02-18 | 浙江爱旭太阳能科技有限公司 | 一种双面背接触太阳能电池及其背面结构 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20240030864A1 (en) | High voltage solar modules | |
| US20200279967A1 (en) | Solar cell having a plurality of sub-cells coupled by a metallization structure | |
| US11594646B2 (en) | Solar module having a plurality of strings configured from a five strip cell | |
| US6239354B1 (en) | Electrical isolation of component cells in monolithically interconnected modules | |
| US7863515B2 (en) | Thin-film solar cell and method of manufacturing the same | |
| US9087948B1 (en) | Manufacturing method of multi-junction PV modules | |
| US7759158B2 (en) | Scalable photovoltaic cell and solar panel manufacturing with improved wiring | |
| US8138410B2 (en) | Optical tandem photovoltaic cell panels | |
| US4513168A (en) | Three-terminal solar cell circuit | |
| US20110017257A1 (en) | Multi-junction solar module and method for current matching between a plurality of first photovoltaic devices and second photovoltaic devices | |
| US20170170336A1 (en) | Systems and methods for routing wires in a solar module | |
| CN113614938B (zh) | 太阳能电池模块 | |
| WO2021201342A1 (fr) | Module photovoltaïque imbriqué pouvant être conçu et son procédé de fabrication | |
| US8569613B1 (en) | Multi-terminal photovoltaic module including independent cells and related system | |
| GB2564123A (en) | Multi-purpose off-grid PV module design | |
| KR102511697B1 (ko) | 셀 레벨 배선에 의해 연결되는 복수 개의 서브셀을 구비한 태양 전지 | |
| WO2023248256A1 (fr) | Supercellule photovoltaïque tridimensionnelle et module de supercellules photovoltaïques tridimensionnelles et son procédé de fabrication | |
| KR101721360B1 (ko) | 태양전지 모듈 및 태양전지 어레이 | |
| US20190371950A1 (en) | Configurable solar cells | |
| CN110165006B (zh) | 一种极性互补的晶体硅光伏电池连接组 | |
| EP4354519A1 (fr) | Cellule solaire tandem | |
| US20130025645A1 (en) | Asymmetric cell design in solar panels and manufacturing method thereof | |
| CN117997265A (zh) | 基于钙钛矿结构的多结光伏组件用智能接线盒系统 | |
| WO2023107003A2 (fr) | Fabrication de module solaire tandem | |
| US20190131476A1 (en) | Photovoltaic Cell, Photovoltaic Panel and Method for the Production of Photovoltaic Cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 23826695 Country of ref document: EP Kind code of ref document: A1 |