WO2023245511A1 - Procédé et système de réglage de paramètre de processus, et système de production et dispositif informatique - Google Patents

Procédé et système de réglage de paramètre de processus, et système de production et dispositif informatique Download PDF

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Publication number
WO2023245511A1
WO2023245511A1 PCT/CN2022/100530 CN2022100530W WO2023245511A1 WO 2023245511 A1 WO2023245511 A1 WO 2023245511A1 CN 2022100530 W CN2022100530 W CN 2022100530W WO 2023245511 A1 WO2023245511 A1 WO 2023245511A1
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target structure
substrate
target
temperature
adjustment coefficient
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PCT/CN2022/100530
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English (en)
Chinese (zh)
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荀利凯
唐毓英
刘勇兴
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重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2022/100530 priority Critical patent/WO2023245511A1/fr
Publication of WO2023245511A1 publication Critical patent/WO2023245511A1/fr

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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
    • G05B19/00—Programme-control systems
    • G05B19/02—Programme-control systems electric
    • G05B19/418—Total factory control, i.e. centrally controlling a plurality of machines, e.g. direct or distributed numerical control [DNC], flexible manufacturing systems [FMS], integrated manufacturing systems [IMS] or computer integrated manufacturing [CIM]

Definitions

  • the present application relates to the field of semiconductor process technology, and in particular to a process parameter adjustment method, system, production system, computer equipment, storage medium and computer program product.
  • this application provides a process parameter adjustment method, including:
  • the process parameters for forming the target structure on the current substrate are automatically adjusted based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data.
  • the obtaining the adjustment coefficient includes: obtaining the temperature adjustment coefficient;
  • the process parameters include process temperature; the measurement data include measurement wavelength and target wavelength;
  • the automatic adjustment of the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data includes: based on the temperature adjustment coefficient, The process temperature for forming the target structure on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength automatically adjust the process temperature for forming the target structure on the current substrate.
  • the target structure formed on the current substrate is determined based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength.
  • the process temperature of the structure is automatically adjusted, including:
  • the first target formula is used to calculate the process of forming the target structure on the current substrate.
  • the temperature is automatically adjusted, where the first target formula is:
  • T N T N-1 +K N ⁇ (WLD N-1 -WLD 0 )
  • T N is the process temperature for forming the target structure on the current substrate
  • T N-1 is the process temperature for forming the target structure on the previous substrate
  • K N is the temperature adjustment coefficient
  • WLD N-1 is the target formed on the previous substrate
  • WLD 0 is the target wavelength
  • N is an integer greater than 1.
  • obtaining the temperature adjustment coefficient includes:
  • M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate. plus the value of the temperature reference coefficient;
  • a fitting curve of the process temperature-measurement wavelength and a fitting curve of the process temperature-measurement wavelength are obtained by fitting. Slope, the slope of the fitting curve of the process temperature-measurement wavelength is determined as the temperature adjustment coefficient.
  • the process temperature for forming the target structure on the previous substrate includes: the process temperature for forming the epitaxial structure on the substrate.
  • obtaining the adjustment coefficient further includes: obtaining the flow adjustment coefficient;
  • the process parameters also include process reaction gas flow;
  • the measurement data includes measured warpage and target warpage;
  • the automatic adjustment of the process parameters for forming the target structure on the current substrate based on the adjustment coefficient, the process parameters for forming the target structure on the previous substrate, and the measurement data includes: based on the flow adjustment coefficient, The process reaction gas flow rate for forming the target structure on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage automatically adjust the process reaction gas flow rate for forming the target structure on the current substrate.
  • the method is based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, the measured warpage of the target structure formed on the previous substrate, and the target warpage. Automatically adjust the process reaction gas flow to form the target structure on the current substrate, including:
  • the second target formula is used to calculate the current substrate
  • the process reaction gas flow rate to form the target structure is automatically adjusted, wherein the second target formula is:
  • Flow N Flow N-1 + ⁇ N ⁇ (Dev N-1 -Dev 0 )
  • Flow N is the process reaction gas flow rate to form the target structure on the current substrate
  • Flow N-1 is the process reaction gas flow rate to form the target structure on the previous substrate
  • ⁇ N is the flow adjustment coefficient
  • Dev N-1 is the previous substrate
  • obtaining the flow adjustment coefficient includes:
  • M is a positive integer greater than 1 and less than N.
  • the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate.
  • a fitting curve of the process reaction gas flow rate-measured warpage degree and the process reaction gas are obtained by fitting.
  • the slope of the fitting curve between the flow rate and the measured warpage is determined as the flow adjustment coefficient.
  • the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.
  • this application also provides a process parameter adjustment system, including:
  • a first acquisition device used to acquire the adjustment coefficient
  • a second acquisition device used to acquire the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;
  • a processing device connected to the first acquisition device and the second acquisition device, configured to generate a pair based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data.
  • the automatic adjustment signal is used to automatically adjust the process parameters of the target structure formed on the current substrate.
  • the adjustment coefficient includes a temperature adjustment coefficient; the process parameters for forming the target structure on each substrate include process temperature; the measurement data includes a measurement wavelength and a target wavelength; the first acquisition device It includes a temperature adjustment coefficient acquisition module, which is used to obtain the temperature adjustment coefficient; the processing device includes a first processing module, the first processing module, the second acquisition device and the temperature
  • the adjustment coefficient acquisition module is connected and used to generate an adjustment coefficient for the target structure on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength of the target structure formed on the previous substrate, and the target wavelength.
  • An automatic adjustment signal is formed to automatically adjust the process temperature of the target structure.
  • the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate.
  • the adjustment coefficient also includes obtaining a flow adjustment coefficient, and the process parameters for forming the target structure on each substrate also include process reaction gas flow;
  • the measurement data includes measured warpage and target warpage. curvature;
  • the first acquisition device also includes a flow adjustment coefficient acquisition module, the flow adjustment coefficient acquisition module is used to obtain the flow adjustment coefficient;
  • the processing device includes a second processing module, the second processing module and The second acquisition device is connected to the flow adjustment coefficient acquisition module, and is used for measuring the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, and the target structure formed on the previous substrate.
  • the warpage degree and the target warpage degree generate an automatic adjustment signal for automatically adjusting the process reaction gas flow rate to form the target structure on the current substrate.
  • the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.
  • this application also provides a production system, including:
  • Process equipment used to form target structures on each substrate and obtain process parameters for forming the target structures on each substrate;
  • Measuring equipment connected to the process equipment, is used to measure the target structure formed on each substrate and obtain measurement data of the target structure formed on each substrate;
  • the process parameter adjustment system as described in any of the above embodiments is connected to the process equipment and the measurement equipment.
  • the present application also provides a computer device, including a memory and a processor.
  • the memory stores a computer program.
  • the processor executes the computer program, it implements the process parameter adjustment described in any of the above embodiments. Method steps.
  • the present application also provides a computer-readable storage medium on which a computer program is stored.
  • the computer program is executed by a processor, the steps of the process parameter adjustment method described in any of the above embodiments of the claims are implemented. .
  • the present application also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the process parameter adjustment method described in any of the above embodiments.
  • Figure 1 is a flow chart of a process parameter adjustment method provided in an embodiment
  • Figure 2 is a flow chart for obtaining a temperature adjustment coefficient in a process parameter adjustment method provided in an embodiment
  • Figure 3 is a fitting curve of process temperature-measurement wavelength obtained in step S203 of the process parameter adjustment method provided in an embodiment; where K N is the temperature adjustment coefficient;
  • Figure 4 is a fitting curve of measured warpage-luminescence wavelength standard deviation obtained in the process parameter adjustment method provided in an embodiment; wherein Dev 0 is the target warpage;
  • Figure 5 is a top structural schematic diagram of the target structure in the process parameter adjustment method provided in an embodiment
  • Figure 6 is a flow chart for obtaining the flow adjustment coefficient in the process parameter adjustment method provided in an embodiment
  • Figure 7 is a fitting curve of process reaction gas flow-measured warpage obtained in step S603 of the process parameter adjustment method provided in an embodiment; wherein, ⁇ N is the flow adjustment coefficient;
  • Figure 8 is a schematic structural diagram of a process parameter adjustment system provided in an embodiment
  • Figure 9 is a schematic structural diagram of a process parameter adjustment system provided in another embodiment.
  • Figure 10 is a schematic structural diagram of a process parameter adjustment system provided in another embodiment
  • Figure 11 is a schematic structural diagram of a production system provided in an embodiment
  • Figure 12 is an internal structure diagram of a computer device in one embodiment.
  • First acquisition device 11. Temperature adjustment coefficient acquisition module; 12. Flow adjustment coefficient acquisition module; 2. Second acquisition device; 3. Processing device; 31. First processing module; 32. Second processing module; 100 , process equipment; 200, measurement equipment; 300, process parameter adjustment system.
  • Spatial relational terms such as “under”, “under”, “under”, “under”, “on”, “above”, etc., in This may be used to describe the relationship of one element or feature to other elements or features shown in the figures. It will be understood that the spatially relative terms encompass different orientations of the device in use and operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as “below” or “under” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary terms “below” and “under” may include both upper and lower orientations. Additionally, the device may be otherwise oriented (eg, rotated 90 degrees or at other orientations) and the spatial descriptors used herein interpreted accordingly.
  • a process parameter adjustment method, system, production system, computer equipment, storage medium and computer program product are provided.
  • the present application provides a process parameter adjustment method.
  • the process parameter adjustment method may include the following steps:
  • S103 Automatically adjust the process parameters of the target structure formed on the current substrate based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data.
  • the process parameter adjustment method uses the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate, based on the adjustment coefficient and the process technology of the target structure formed on the previous substrate.
  • Parameters and measurement data automatically adjust the process parameters for forming the target structure on the current substrate, so that the process parameters for forming the target structure on the current substrate can be adjusted in real time, which can avoid product abnormalities caused by not updating parameters for a long time.
  • the current process parameters for forming the target structure substrate are automatically adjusted, eliminating the need for manpower to regularly go to the production workshop to modify parameters, effectively avoiding the occurrence of human subjective judgment and human errors, and can help to obtain more accurate process parameters to improve product yield and corporate competitiveness.
  • obtaining the adjustment coefficient includes: obtaining a temperature adjustment coefficient; process parameters include process temperature; measurement data includes measurement wavelength and target wavelength; based on the adjustment coefficient, process parameters of forming the target structure on the previous substrate and The measurement data automatically adjusts the process parameters of the target structure formed on the current substrate, including: based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength and target wavelength of the target structure formed on the previous substrate. Automatically adjust the process temperature for forming the target structure on the current substrate.
  • the process temperature used to form the target structure on the previous substrate refers to the process temperature used to form the target structure on the previous substrate, and the process temperature data can be obtained in real time during the process.
  • the measurement wavelength refers to the luminescence wavelength of the target structure obtained by performing a photoluminescence test on the target structure after forming the target structure on the substrate.
  • the target wavelength refers to the ideal luminescence wavelength of the desired target structure under photoluminescence testing, and may be the luminescence wavelength of the central region of the ideal target structure.
  • the process temperature for forming the target structure on the current substrate is automatically adjusted based on the temperature adjustment coefficient, the process temperature for forming the target structure on the previous substrate, the measurement wavelength and the target wavelength of the target structure formed on the previous substrate.
  • the first target formula is used to automatically adjust the process temperature of the target structure formed on the current substrate.
  • the first objective formula is:
  • T N T N-1 +K N ⁇ (WLD N-1 -WLD 0 )
  • T N is the process temperature for forming the target structure on the current substrate
  • T N-1 is the process temperature for forming the target structure on the previous substrate
  • K N is the temperature adjustment coefficient
  • WLD N-1 is the target formed on the previous substrate
  • WLD 0 is the target wavelength
  • N is an integer greater than 1.
  • N may be, but is not limited to, an integer greater than 5.
  • obtaining the temperature adjustment coefficient may include the following steps:
  • S201 Set the temperature reference coefficient, and form target structures on M substrates respectively.
  • M is a positive integer greater than 1 and less than N; among them, the process temperature for forming the target structure on each substrate is the same as that for forming the target structure on the previous substrate.
  • S203 Based on the process temperature of the target structure formed on each substrate and the measurement wavelength of the target structure formed on each substrate, fit to obtain the fitting curve of the process temperature-measurement wavelength and the fitting curve of the process temperature-measurement wavelength. Slope, determine the slope of the fitting curve of process temperature-measurement wavelength as the temperature adjustment coefficient.
  • step S203 can refer to Figure 3.
  • the fitting curve of the process temperature-measurement wavelength is obtained by fitting and The slope of the fitting curve between process temperature and measurement wavelength; the slope of the fitting curve between process temperature and measurement wavelength is the value of the temperature adjustment coefficient, that is, the dotted line K N in Figure 3 corresponds to the temperature adjustment coefficient obtained by fitting. curve.
  • the temperature reference coefficient is a known temperature adjustment experience value.
  • the target structure may include an epitaxial structure
  • the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate.
  • the measurement wavelength of the target structure formed on the previous substrate includes the luminescence wavelength of the epitaxial structure obtained by performing a photoluminescence test on the epitaxial structure after forming the epitaxial structure on the substrate.
  • the epitaxial structure may include a quantum well layer
  • the process temperature used to form the epitaxial structure may be the process temperature used when forming the quantum well layer.
  • obtaining the adjustment coefficient also includes: obtaining the flow adjustment coefficient; the process parameters also include the process reaction gas flow; the measurement data includes the measured warpage and the target warpage; based on the adjustment coefficient, Process parameters and measurement data for forming the target structure.
  • Automatic adjustment of the process parameters for forming the target structure on the current substrate includes: based on the flow adjustment coefficient, the process reaction gas flow rate for forming the target structure on the previous substrate, the flow rate of the process reaction gas formed on the previous substrate. The measured warpage and target warpage of the target structure are used to automatically adjust the process reaction gas flow rate to form the target structure on the current substrate.
  • the process reaction gas may include but is not limited to nitrogen, gas gallium or gas indium.
  • the formation of the target structure on the current substrate is based on the flow adjustment coefficient, the flow rate of the process reaction gas for forming the target structure on the previous substrate, the measured warpage and the target warpage of the target structure formed on the previous substrate.
  • the process reaction gas flow is automatically adjusted, including:
  • the process reaction gas flow rate for forming the target structure on the previous substrate, the measured warpage and target warpage of the target structure formed on the previous substrate, the second target formula is used to form the target structure on the current substrate.
  • the process reaction gas flow rate is automatically adjusted, where the second target formula is:
  • Flow N Flow N-1 + ⁇ N ⁇ (Dev N-1 -Dev 0 )
  • Flow N is the process reaction gas flow rate to form the target structure on the current substrate
  • Flow N-1 is the process reaction gas flow rate to form the target structure on the previous substrate
  • ⁇ N is the flow adjustment coefficient
  • Dev N-1 is the previous substrate
  • N may be, but is not limited to, an integer greater than 5.
  • the process reaction gas flow rate used to form the target structure on the previous substrate refers to the process reaction gas flow rate used to form the target structure on the previous substrate.
  • the process reaction gas flow rate data can be obtained in real time during the process.
  • the measured warpage refers to the measured warpage of the target structure obtained by conducting a warpage test on the target structure after forming the target structure on the substrate.
  • the target warpage refers to fitting the measured warpage of the target structure formed on each substrate and the standard deviation of the luminescence wavelength of the target structure to obtain a fitting curve of the measured warpage - the standard deviation of the luminescence wavelength, as shown in the figure
  • the fitting curve of measured warpage-luminescence wavelength standard deviation is generally a parabola, and the vertex of the parabola is the target warp degree Dev 0 .
  • the target structure to obtain the measured warpage of the target structure, it is necessary to conduct light testing on the central area of the target structure and the areas located on the periphery of the central area and arranged sequentially along the periphery of the central area.
  • the average luminescence wavelength of each area obtained by the electroluminescence test can then be combined with Figure 5 and used to calculate the measured warpage of the target structure using the third target formula, where the third target formula is:
  • a in the third target formula is the average luminescence wavelength of the central area A of the target structure, b to i are respectively located at the periphery of the central area and along the periphery of the central area in order The average emission wavelength of each region from the B region to the I region of the arrangement.
  • obtaining the flow adjustment coefficient may include the following steps:
  • S601 Set the flow reference coefficient, and form target structures on M substrates respectively.
  • M is a positive integer greater than 1 and less than N; among them, the process reaction gas flow rate for forming the target structure on each substrate is the target structure formed on the previous substrate. The reaction gas flow rate of the structure plus the value of the flow reference coefficient;
  • step S603 can refer to FIG. 7 .
  • the process reaction gas flow rate - the measured warpage rate is obtained by fitting.
  • the fitting curve of the curvature and the slope of the fitting curve of the process reaction gas flow-measured warpage; the slope of the fitting curve of the process reaction gas flow-measured warpage is the value of the flow adjustment coefficient, as shown in Figure
  • the dotted line ⁇ N in 7 is the curve corresponding to the flow adjustment coefficient obtained by fitting.
  • the target structure may include an epitaxial structure
  • the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.
  • the measured warpage of the target structure formed on the previous substrate includes the warpage of the epitaxial structure obtained by testing the epitaxial structure after the epitaxial structure is formed on the substrate.
  • the epitaxial structure may include a buffer layer, and the process reaction gas flow rate used to form the epitaxial structure may be the process reaction gas flow rate used when forming the buffer layer.
  • this application also provides a process parameter adjustment system.
  • the process parameter adjustment system includes:
  • the first acquisition device 1 is used to acquire the adjustment coefficient
  • the second acquisition device 2 is used to acquire the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate;
  • the processing device 3 is connected to the first acquisition device 1 and the second acquisition device 2, and is used to generate a target structure formed on the current substrate based on the adjustment coefficient, process parameters and measurement data of the target structure formed on the previous substrate. Automatic adjustment signal for automatic adjustment of process parameters.
  • the process parameter adjustment system acquires the adjustment coefficient through the first acquisition device 1, and acquires the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate through the second acquisition device 2.
  • the current substrate can be adjusted in real time. Adjusting the process parameters for forming the target structure on the current substrate can avoid problems such as product abnormalities caused by not updating parameters for a long time; in addition, the processing device 3 automatically adjusts the process parameters for forming the target structure on the current substrate, eliminating manual timing. Going to the production workshop to modify parameters effectively avoids subjective judgment and human errors, helps obtain more accurate process parameters, and improves product yield and corporate competitiveness.
  • the adjustment coefficient includes a temperature adjustment coefficient; the process parameters for forming the target structure on each substrate include the process temperature; the measurement data includes the measurement wavelength and the target wavelength; the first acquisition device 1 It includes a temperature adjustment coefficient acquisition module 11, which is used to acquire the temperature adjustment coefficient; the processing device 3 includes a first processing module 31, and the first processing module 31 is connected to the second acquisition device 2 and the temperature adjustment coefficient acquisition module 11. Connection, used to generate automatic adjustment of the process temperature of the target structure formed on the current substrate based on the temperature adjustment coefficient, the process temperature of the target structure formed on the previous substrate, the measurement wavelength and the target wavelength of the target structure formed on the previous substrate automatic adjustment signal.
  • the process temperature for forming the target structure on the previous substrate includes the process temperature for forming the epitaxial structure on the substrate.
  • the measurement wavelength of the target structure formed on the previous substrate includes the luminescence wavelength of the epitaxial structure obtained by performing a photoluminescence test on the epitaxial structure after forming the epitaxial structure on the substrate.
  • the epitaxial structure may include a quantum well layer
  • the process temperature used to form the epitaxial structure may be the process temperature used when forming the quantum well layer.
  • the adjustment coefficient also includes obtaining the flow adjustment coefficient, and the process parameters for forming the target structure on each substrate also include the process reaction gas flow rate;
  • the measurement data includes the measured warpage and target warpage;
  • the first acquisition device 1 also includes a flow adjustment coefficient acquisition module 12, which is used to acquire the flow adjustment coefficient;
  • the processing device 3 includes a second processing module 32, the second processing module 32 and the second acquisition module
  • the device 2 is connected to the flow adjustment coefficient acquisition module 12 for measuring the warpage and the target warpage based on the flow adjustment coefficient, the process reaction gas flow rate of the target structure formed on the previous substrate, and the target structure formed on the previous substrate. degree, and generates an automatic adjustment signal that automatically adjusts the process reaction gas flow rate to form the target structure on the current substrate.
  • the process reaction gas flow rate for forming the target structure on the previous substrate includes the process reaction gas flow rate for forming the epitaxial structure on the substrate.
  • the measured warpage of the target structure formed on the previous substrate includes the warpage of the epitaxial structure obtained by testing the epitaxial structure after the epitaxial structure is formed on the substrate.
  • the epitaxial structure may include a buffer layer, and the process reaction gas flow rate used to form the epitaxial structure may be the process reaction gas flow rate used when forming the buffer layer.
  • the process reaction gas may include but is not limited to nitrogen, gas gallium or gas indium.
  • this application also provides a production system, as shown in Figure 11.
  • the production system includes:
  • Process equipment 100 is used to form target structures on each substrate and obtain process parameters for forming the target structures on each substrate;
  • the measurement equipment 200 is connected to the process equipment and is used to measure the target structure formed on each substrate and obtain the measurement data of the target structure formed on each substrate;
  • the process parameter adjustment system 300 of any of the above embodiments is connected to the process equipment and the measurement equipment.
  • the production system includes the above-mentioned process parameter adjustment system 300.
  • the adjustment coefficient is obtained through the first acquisition device 1, and the process parameters for forming the target structure on the previous substrate and the process parameters for forming the target structure on the previous substrate are acquired through the second acquisition device 2.
  • the measurement data of the target structure is used to automatically adjust the process parameters of the target structure on the current substrate through the processing device 3 based on the adjustment coefficient, the process parameters of the target structure formed on the previous substrate, and the measurement data.
  • the process parameters of the target structure formed on the current substrate can be adjusted in real time, which can avoid problems such as product abnormalities caused by not updating parameters for a long time; in addition, the processing device 3 performs the process parameters of the target structure formed on the current substrate.
  • Automatic adjustment eliminates the need for manpower to regularly go to the production workshop to modify parameters, effectively avoiding the occurrence of subjective judgments and human errors. It can help obtain more accurate process parameters, improve product yields and corporate competitiveness.
  • a computer device is provided.
  • the computer device may be a terminal, and its internal structure diagram may be as shown in FIG. 12 .
  • the computer device includes a processor, memory, communication interface, display screen and input device connected through a system bus.
  • the processor of the computer device is used to provide computing and control capabilities.
  • the memory of the computer device includes non-volatile storage media and internal memory.
  • the non-volatile storage medium stores operating systems and computer programs. This internal memory provides an environment for the execution of operating systems and computer programs in non-volatile storage media.
  • the communication interface of the computer device is used for wired or wireless communication with external terminals.
  • the wireless mode can be implemented through WIFI, mobile cellular network, NFC (Near Field Communication) or other technologies.
  • the computer program implements a process parameter adjustment method when executed by the processor.
  • the display screen of the computer device may be a liquid crystal display or an electronic ink display.
  • the input device of the computer device may be a touch layer covered on the display screen, or may be a button, trackball or touch pad provided on the computer device shell. , it can also be an external keyboard, trackpad or mouse, etc.
  • Figure 12 is only a block diagram of a partial structure related to the solution of the present application, and does not constitute a limitation on the computer equipment to which the solution of the present application is applied.
  • Specific computer equipment can May include more or fewer parts than shown, or combine certain parts, or have a different arrangement of parts.
  • This application also provides a computer device, including a memory and a processor.
  • the memory stores a computer program.
  • the processor executes the computer program, it implements the steps of the process parameter adjustment method of any of the above embodiments.
  • the processor also implements the following steps when executing the computer program:
  • the adjustment coefficient obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate; based on the adjustment coefficient, the process parameters and measurement data of the target structure formed on the previous substrate Automatically adjust the process parameters for forming the target structure on the current substrate.
  • the processor also implements the following steps when executing the computer program:
  • M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate.
  • the processor also implements the following steps when executing the computer program:
  • the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate.
  • Add the value of the flow reference coefficient to the reaction gas flow rate take the process reaction gas flow rate of the target structure formed on each substrate as the abscissa, and use the measured warpage of the target structure formed on each substrate as the ordinate to establish the process reaction gas flow rate -Measurement warpage coordinate system; based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage degree of the target structure formed on each substrate, the process reaction gas flow rate-measurement warpage degree is obtained by fitting The fitting curve and the slope of the fitting curve between the process reaction gas flow rate and the measured warpage are determined as the flow adjustment coefficient.
  • the present application also provides a computer-readable storage medium on which a computer program is stored.
  • the computer program is executed by a processor, the steps of the process parameter adjustment method of any of the above embodiments of the claims are implemented.
  • the computer program when executed by the processor, also implements the following steps:
  • the adjustment coefficient obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate; based on the adjustment coefficient, the process parameters and measurement data of the target structure formed on the previous substrate Automatically adjust the process parameters for forming the target structure on the current substrate.
  • the computer program when executed by the processor, also implements the following steps:
  • M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate.
  • the computer program when executed by the processor, also implements the following steps:
  • the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate.
  • Add the value of the flow reference coefficient to the reaction gas flow rate take the process reaction gas flow rate of the target structure formed on each substrate as the abscissa, and use the measured warpage of the target structure formed on each substrate as the ordinate to establish the process reaction gas flow rate -Measurement warpage coordinate system; based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage degree of the target structure formed on each substrate, the process reaction gas flow rate-measurement warpage degree is obtained by fitting The fitting curve and the slope of the fitting curve between the process reaction gas flow rate and the measured warpage are determined as the flow adjustment coefficient.
  • This application also provides a computer program product, which includes a computer program.
  • the computer program is executed by a processor, the steps of the process parameter adjustment method of any of the above embodiments are implemented.
  • the computer program when executed by the processor, also implements the following steps:
  • the adjustment coefficient obtain the process parameters of the target structure formed on the previous substrate and the measurement data of the target structure formed on the previous substrate; based on the adjustment coefficient, the process parameters and measurement data of the target structure formed on the previous substrate Automatically adjust the process parameters for forming the target structure on the current substrate.
  • the computer program when executed by the processor, also implements the following steps:
  • M is a positive integer greater than 1 and less than N; where, the process temperature for forming the target structure on each substrate is the process temperature for forming the target structure on the previous substrate.
  • the computer program when executed by the processor, also implements the following steps:
  • the process reaction gas flow rate for forming the target structure on each substrate is the flow rate of the target structure formed on the previous substrate.
  • Add the value of the flow reference coefficient to the reaction gas flow rate take the process reaction gas flow rate of the target structure formed on each substrate as the abscissa, and use the measured warpage of the target structure formed on each substrate as the ordinate to establish the process reaction gas flow rate -Measurement warpage coordinate system; based on the process reaction gas flow rate of the target structure formed on each substrate and the measured warpage degree of the target structure formed on each substrate, the process reaction gas flow rate-measurement warpage degree is obtained by fitting The fitting curve and the slope of the fitting curve between the process reaction gas flow rate and the measured warpage are determined as the flow adjustment coefficient.
  • the computer program can be stored in a non-volatile computer-readable storage medium. , when executed, the computer program may include the processes of the above method embodiments. Any reference to memory, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory.
  • Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive memory (ReRAM), magnetic variable memory (Magnetoresistive Random Access Memory (MRAM), ferroelectric memory (Ferroelectric Random Access Memory, FRAM), phase change memory (Phase Change Memory, PCM), graphene memory, etc.
  • Volatile memory may include random access memory (Random Access Memory, RAM) or external cache memory, etc.
  • RAM Random Access Memory
  • RAM random access memory
  • RAM Random Access Memory
  • the databases involved in the various embodiments provided in this application may include at least one of a relational database and a non-relational database.
  • Non-relational databases may include blockchain-based distributed databases, etc., but are not limited thereto.
  • the processors involved in the various embodiments provided in this application may be general-purpose processors, central processing units, graphics processors, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to this.

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

La présente demande concerne un procédé et un système de réglage de paramètre de processus, et un système de production, un dispositif informatique, un support d'enregistrement et un produit programme d'ordinateur. Le procédé de réglage de paramètre de processus consiste à : acquérir un coefficient de réglage ; acquérir un paramètre de processus pour un procédé de fabrication impliquant la formation d'une structure cible sur le substrat précédent, et des données de mesure de la structure cible qui est formée sur le substrat précédent ; et, sur la base du coefficient de réglage, du paramètre de processus pour le procédé de fabrication impliquant la formation de la structure cible sur le substrat précédent, et des données de mesure, régler automatiquement un paramètre de processus pour un procédé de fabrication impliquant la formation de la structure cible sur le substrat actuel.
PCT/CN2022/100530 2022-06-22 2022-06-22 Procédé et système de réglage de paramètre de processus, et système de production et dispositif informatique WO2023245511A1 (fr)

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Publication number Priority date Publication date Assignee Title
CN109507850A (zh) * 2018-12-19 2019-03-22 惠科股份有限公司 一种曝光参数的确定方法、确定装置及终端设备
CN111190393A (zh) * 2018-11-14 2020-05-22 长鑫存储技术有限公司 半导体制程自动化控制方法及装置
CN111209609A (zh) * 2018-11-21 2020-05-29 长鑫存储技术有限公司 生产参数确定方法及装置、系统、存储介质和电子设备
CN112306004A (zh) * 2019-07-26 2021-02-02 长鑫存储技术有限公司 半导体制程工艺配方管理方法与系统
CN113552856A (zh) * 2021-09-22 2021-10-26 成都数之联科技有限公司 工艺参数根因定位方法和相关装置

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Publication number Priority date Publication date Assignee Title
CN111190393A (zh) * 2018-11-14 2020-05-22 长鑫存储技术有限公司 半导体制程自动化控制方法及装置
CN111209609A (zh) * 2018-11-21 2020-05-29 长鑫存储技术有限公司 生产参数确定方法及装置、系统、存储介质和电子设备
CN109507850A (zh) * 2018-12-19 2019-03-22 惠科股份有限公司 一种曝光参数的确定方法、确定装置及终端设备
CN112306004A (zh) * 2019-07-26 2021-02-02 长鑫存储技术有限公司 半导体制程工艺配方管理方法与系统
CN113552856A (zh) * 2021-09-22 2021-10-26 成都数之联科技有限公司 工艺参数根因定位方法和相关装置

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