WO2023238527A1 - コンデンサアレイ - Google Patents

コンデンサアレイ Download PDF

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Publication number
WO2023238527A1
WO2023238527A1 PCT/JP2023/016082 JP2023016082W WO2023238527A1 WO 2023238527 A1 WO2023238527 A1 WO 2023238527A1 JP 2023016082 W JP2023016082 W JP 2023016082W WO 2023238527 A1 WO2023238527 A1 WO 2023238527A1
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WO
WIPO (PCT)
Prior art keywords
layer
sealing layer
thickness direction
sealing
capacitor
Prior art date
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Ceased
Application number
PCT/JP2023/016082
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English (en)
French (fr)
Japanese (ja)
Inventor
拓哉 天本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication date
Application filed by Murata Manufacturing Co Ltd filed Critical Murata Manufacturing Co Ltd
Priority to CN202380043786.2A priority Critical patent/CN119301717A/zh
Priority to JP2024526278A priority patent/JPWO2023238527A1/ja
Publication of WO2023238527A1 publication Critical patent/WO2023238527A1/ja
Priority to US18/955,117 priority patent/US20250087429A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/26—Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices with each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
    • H01G2/02—Mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/40—Structural combinations of fixed capacitors with other electric elements, the structure mainly consisting of a capacitor, e.g. RC combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/008—Terminals
    • H01G9/012—Terminals specially adapted for solid capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
    • H01G9/055—Etched foil electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/07—Dielectric layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/08—Housing; Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/08—Housing; Encapsulation
    • H01G9/10—Sealing, e.g. of lead-in wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/15—Solid electrolytic capacitors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits

Definitions

  • the present invention relates to a capacitor array.
  • Patent Document 1 includes a plurality of solid electrolytic capacitor elements formed by dividing one solid electrolytic capacitor sheet, a sheet-shaped first sealing layer, and a sheet-shaped second sealing layer,
  • the electrolytic capacitor sheet includes an anode plate made of a valve metal, a porous layer provided on at least one main surface of the anode plate, a dielectric layer provided on the surface of the porous layer, and the dielectric layer.
  • each of the plurality of solid electrolytic capacitor elements has a first main surface and a second main surface facing each other in the thickness direction.
  • the main surface side is disposed on the first sealing layer, and the second sealing layer is configured to cover the plurality of solid electrolytic capacitor elements on the first sealing layer from the second main surface side.
  • a capacitor array is disclosed in which the solid electrolytic capacitor elements are separated by slit-like sheet removal parts.
  • the present invention has been made in order to solve the above problems, and an object of the present invention is to provide a capacitor array that can suppress deterioration in flatness.
  • the capacitor array of the present invention includes a plurality of capacitor parts arranged in a plane in a plane direction perpendicular to the thickness direction, and a plurality of capacitor parts sealed from both main surfaces facing in the thickness direction of the plurality of capacitor parts. and a sealing part made of an insulating material, the sealing part being formed by laminating a plurality of sealing layers in the thickness direction, and the plurality of sealing layers having a thickness in the thickness direction. a first sealing layer located closest to the capacitor section in the direction; and a first sealing layer located on the opposite side of the capacitor section from the first sealing layer in the thickness direction, and in the thickness direction of the sealing section. A second sealing layer forming both opposing principal surfaces.
  • FIG. 1 is a schematic plan view showing an example of a capacitor array of the present invention.
  • FIG. 2 is a schematic cross-sectional view showing an example of a cross section of the capacitor array shown in FIG. 1 along line segment A1-A2.
  • FIG. 3 is a schematic cross-sectional view showing an enlarged area surrounded by a broken line in FIG. 2.
  • FIG. 4 is a schematic cross-sectional view showing an example of a cross section of the capacitor array shown in FIG. 1 along line segment B1-B2.
  • FIG. 5 is a schematic cross-sectional view showing an enlarged area surrounded by a broken line in FIG. 4.
  • FIG. FIG. 6 is a schematic cross-sectional view showing an enlarged view of a via conductor and its surroundings in a capacitor array in which the insulating material constituting the second sealing layer contains glass cloth.
  • the capacitor array of the present invention will be explained. Note that the present invention is not limited to the following configuration, and may be modified as appropriate without departing from the gist of the present invention. Furthermore, the present invention also includes a combination of a plurality of individual preferred configurations described below.
  • FIG. 1 is a schematic plan view showing an example of a capacitor array of the present invention.
  • the capacitor array 1 shown in FIG. 1 has a plurality of capacitor sections 10.
  • the number of capacitor sections 10 is not particularly limited as long as it is two or more.
  • the plurality of capacitor parts 10 are arranged in a plane in a plane direction perpendicular to the thickness direction T.
  • the plurality of capacitor sections 10 are arranged in a plane along a first direction U that is orthogonal to the thickness direction T, and a second direction V that is orthogonal to the thickness direction T and the first direction U. . That is, the surface direction is a direction that includes the first direction U and the second direction V.
  • the plurality of capacitor sections 10 may be arranged along multiple directions as shown in FIG. 1, or may be arranged along one direction. Furthermore, the plurality of capacitor sections 10 may be arranged regularly or irregularly.
  • the planar shape of the capacitor section 10 when viewed from the thickness direction T includes, for example, a rectangle (square or rectangle) as shown in FIG. Examples include oval shape.
  • planar shapes of the plurality of capacitor sections 10 when viewed from the thickness direction T may be the same, different from each other, or partially different.
  • the areas of the plurality of capacitor parts 10 when viewed from the thickness direction T may be the same, different from each other, or different in some parts.
  • FIG. 2 is a schematic cross-sectional view showing an example of a cross section of the capacitor array shown in FIG. 1 along line segment A1-A2.
  • FIG. 3 is a schematic cross-sectional view showing an enlarged area surrounded by a broken line in FIG. 2.
  • FIG. 4 is a schematic cross-sectional view showing an example of a cross section of the capacitor array shown in FIG. 1 along line segment B1-B2.
  • FIG. 5 is a schematic cross-sectional view showing an enlarged area surrounded by a broken line in FIG. 4.
  • the capacitor section 10 includes an anode plate 20, a dielectric layer 30, and a cathode layer 40.
  • the anode plate 20 has a core portion 21 and a porous layer 22.
  • the core portion 21 is preferably made of metal, and particularly preferably made of valve metal.
  • the anode plate 20 is also referred to as a valve metal base.
  • Valve metals include, for example, simple metals such as aluminum, tantalum, niobium, titanium, and zirconium, and alloys containing at least one of these simple metals. Among these, aluminum or aluminum alloy is preferred.
  • the porous layer 22 is provided on at least one of the two principal surfaces facing the thickness direction T of the core portion 21 . That is, the porous layer 22 may be provided only on one main surface of the core section 21, or may be provided on both main surfaces of the core section 21 as shown in FIG. 2 and the like. In this way, the anode plate 20 has the porous layer 22 on at least one of the two main surfaces facing each other in the thickness direction T. This increases the surface area of the anode plate 20, making it easier to improve the capacitance of the capacitor section 10.
  • the porous layer 22 is preferably an etched layer obtained by etching the surface of the anode plate 20.
  • the shape of the anode plate 20 is preferably flat, and more preferably foil-like.
  • plate-like shapes include foil-like shapes, sheet-like shapes, film-like shapes, etc., and these are not distinguished by the dimension in the thickness direction.
  • the dielectric layer 30 is provided on the surface of the porous layer 22. More specifically, the dielectric layer 30 is provided along the surface (contour) of each pore present in the porous layer 22.
  • the dielectric layer 30 is preferably made of an oxide film of the above-mentioned valve metal.
  • the anode plate 20 is aluminum foil
  • the anode plate 20 is anodized (also called chemical conversion treatment) in an aqueous solution containing ammonium adipate, etc. to form an oxide film that will become the dielectric layer 30. is formed. Since the dielectric layer 30 is formed along the surface of the porous layer 22, the dielectric layer 30 is provided with pores (recesses).
  • the cathode layer 40 is provided on the surface of the dielectric layer 30.
  • the cathode layer 40 has a solid electrolyte layer 41 provided on the surface of the dielectric layer 30 and a conductor layer 42 provided on the surface of the solid electrolyte layer 41.
  • the capacitor section 10 constitutes a solid electrolytic capacitor.
  • the solid electrolyte layer 41 has an inner layer provided inside the pores of the dielectric layer 30 and an outer layer covering the inner layer.
  • Examples of the constituent material of the solid electrolyte layer 41 include conductive polymers such as polypyrroles, polythiophenes, and polyanilines. Among these, polythiophenes are preferred, and poly(3,4-ethylenedioxythiophene) (PEDOT) is particularly preferred. Further, the conductive polymer may contain a dopant such as polystyrene sulfonic acid (PSS).
  • conductive polymers such as polypyrroles, polythiophenes, and polyanilines.
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • PES polystyrene sulfonic acid
  • the solid electrolyte layer 41 can be formed, for example, by coating a dispersion of a conductive polymer such as poly(3,4-ethylenedioxythiophene) on the surface of the dielectric layer 30 and drying it;
  • the dielectric layer 30 is formed by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 30 using a treatment liquid containing a polymerizable monomer such as oxythiophene. formed in a predetermined area on the surface.
  • the conductor layer 42 has a conductive resin layer 42A provided on the surface of the solid electrolyte layer 41 and a metal layer 42B provided on the surface of the conductive resin layer 42A.
  • Examples of the conductive resin layer 42A include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of copper filler, silver filler, nickel filler, and carbon filler.
  • the metal layer 42B contains a metal filler.
  • the metal filler is preferably at least one selected from the group consisting of copper filler, silver filler, and nickel filler.
  • the metal layer 42B may be, for example, a metal plating film, metal foil, or the like.
  • the metal layer 42B is preferably made of at least one metal selected from the group consisting of copper, silver, nickel, and an alloy containing at least one of these metals as a main component.
  • the main component means the elemental component having the largest weight percentage.
  • the conductor layer 42 may include, for example, a carbon layer as the conductive resin layer 42A and a copper layer as the metal layer 42B.
  • the carbon layer is formed in a predetermined area by, for example, applying a carbon paste containing a carbon filler to the surface of the solid electrolyte layer 41 using a sponge transfer method, screen printing method, dispenser coating method, inkjet printing method, etc. be done.
  • the copper layer is formed in a predetermined area by applying a copper paste containing a copper filler to the surface of the carbon layer using a sponge transfer method, screen printing method, spray coating method, dispenser coating method, inkjet printing method, etc. is formed.
  • the conductor layer 42 may include at least one of a conductive resin layer 42A and a metal layer 42B.
  • the conductor layer 42 may include only the conductive resin layer 42A, only the metal layer 42B, or may include the conductive resin layer 42A and the metal layer as shown in FIG. It may have both layers 42B.
  • the capacitor section 10 further includes a mask layer 50 provided at the periphery of the porous layer 22 when viewed from the thickness direction T. In this case, insulation between the anode plate 20 and the cathode layer 40 is ensured, and short circuits between the two are prevented.
  • the mask layer 50 is provided on the entire periphery of the porous layer 22. Note that the mask layer 50 may be provided on a part of the periphery of the porous layer 22.
  • the mask layer 50 is preferably provided so as to extend inward from at least one of the two principal surfaces of the anode plate 20 in the thickness direction T; More preferably, they are provided so as to extend toward each other.
  • the mask layer 50 may or may not be in contact with the core 21 in the thickness direction T.
  • the mask layer 50 may be provided outside the porous layer 22 in addition to inside the porous layer 22.
  • the mask layer 50 may be filled inside the porous layer 22 and provided on the surface of the filled porous layer 22 . That is, the dimension of the mask layer 50 in the thickness direction T may be larger than the dimension of the porous layer 22 in the thickness direction T.
  • the mask layer 50 is preferably provided in a region surrounding the cathode layer 40 when viewed from the thickness direction T.
  • the mask layer 50 When viewed from the thickness direction T, the mask layer 50 may partially overlap the cathode layer 40 or may not entirely overlap the cathode layer 40.
  • the mask layer 50 is made of an insulating material.
  • Examples of the insulating material constituting the mask layer 50 include polyphenylsulfone (PPS), polyethersulfone (PES), cyanate ester resin, and fluororesin (tetrafluoroethylene, tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer).
  • PPS polyphenylsulfone
  • PES polyethersulfone
  • cyanate ester resin cyanate ester resin
  • fluororesin tetrafluoroethylene, tetrafluoroethylene/perfluoroalkyl vinyl ether copolymer.
  • the mask layer 50 is formed by coating the above-mentioned insulating material on both main surfaces of the anode plate 20 at a position overlapping the periphery of the porous layer 22 and allowing the material to permeate inward from both main surfaces of the anode plate 20. By doing so, it is formed at the periphery of the porous layer 22.
  • the mask layer 50 may be formed on the porous layer 22 at a timing before the dielectric layer 30, or may be formed at a timing after the dielectric layer 30.
  • the capacitor array 1 shown in FIGS. 2 and 4 further includes a sealing section 60 in addition to the plurality of capacitor sections 10.
  • the sealing portion 60 seals the plurality of capacitor portions 10 from both main surfaces opposite to each other in the thickness direction T of the plurality of capacitor portions 10 . Thereby, the plurality of capacitor sections 10 are protected by the sealing section 60.
  • the sealing part 60 is made of an insulating material.
  • the sealing section 60 functions as an insulating section.
  • the sealing portion 60 is formed by laminating a plurality of sealing layers in the thickness direction T.
  • the plurality of sealing layers that constitute the sealing section 60 include a first sealing layer 60A and a second sealing layer 60B.
  • the sealing section 60 is formed by laminating a first sealing layer 60A and a second sealing layer 60B in the thickness direction T in order from the capacitor section 10 side. That is, in the example shown in FIG. 2 and the like, the second sealing layer 60B is adjacent to the first sealing layer 60A on the opposite side to the capacitor section 10.
  • the first sealing layer 60A is located closest to the capacitor section 10 in the thickness direction T among the plurality of sealing layers. Therefore, the first sealing layer 60A functions as a sealing layer that follows the surface shape of the capacitor section 10.
  • the second sealing layer 60B is located on the side opposite to the capacitor section 10 from the first sealing layer 60A in the thickness direction T, and constitutes both main surfaces of the sealing section 60 facing in the thickness direction T. There is. That is, the second sealing layer 60B is located on the outermost surface of the sealing part 60. Therefore, the second sealing layer 60B functions as a sealing layer that flattens both main surfaces of the sealing section 60 and, by extension, both main surfaces of the capacitor array 1.
  • the first sealing layer 60A mainly plays the role of sealing the capacitor section 10, and covers both main surfaces of the sealing section 60 and, by extension, both main surfaces of the capacitor array 1.
  • the second sealing layer 60B can mainly play the role of flattening. Therefore, in the capacitor array 1 in which the sealing part 60 is composed of a plurality of sealing layers including the first sealing layer 60A and the second sealing layer 60B, the sealing part is composed of only one sealing layer. Warpage, distortion, waviness, etc. caused by the sealing portion 60 are less likely to occur compared to a capacitor array that is similar to a capacitor array.
  • the capacitor array 1 it is possible to suppress the occurrence of warpage, distortion, waviness, etc., and therefore it is possible to suppress the deterioration of flatness.
  • the sealing part 60 only needs to include at least a first sealing layer 60A and a second sealing layer 60B, and at least one layer of sealing is provided between the first sealing layer 60A and the second sealing layer 60B. It may further include layers.
  • the insulating material forming the first sealing layer 60A may contain an insulating resin.
  • Examples of the insulating resin contained in the insulating material constituting the first sealing layer 60A include epoxy resin, phenol resin, polyimide resin, and the like.
  • the insulating material constituting the first sealing layer 60A may further contain an inorganic filler.
  • Examples of the inorganic filler contained in the insulating material constituting the first sealing layer 60A include silica filler, alumina filler, and the like.
  • the median diameter D 50 of the inorganic filler contained in the insulating material constituting the first sealing layer 60A is 10 ⁇ m or less. In this case, even if the first sealing layer 60A contains an inorganic filler, it can easily follow the surface shape of the capacitor section 10.
  • the median diameter D 50 of the inorganic filler contained in the insulating material constituting the first sealing layer 60A is 0.1 ⁇ m or more.
  • the median diameter D50 of the inorganic filler contained in the insulating material constituting the sealing layer is determined as follows. First, by cutting, polishing, etc. the capacitor array, a cross section along the thickness direction in which the target sealing layer is exposed, here, a cross section along the thickness direction in which the first sealing layer is exposed, as shown in FIG. appear. Next, an image of the cross section is taken using a scanning electron microscope (SEM) or the like. Next, in the photographed cross-sectional image, an analysis method such as energy dispersive X-ray analysis (EDX) is used to determine the region where the first sealing layer exists, and furthermore, the presence of the inorganic filler present inside the first sealing layer. Check the existence area.
  • SEM scanning electron microscope
  • EDX energy dispersive X-ray analysis
  • the equivalent circular diameter of the inorganic filler present inside the first sealing layer is measured, and the obtained equivalent circular diameter is taken as the particle size of the inorganic filler.
  • a number-based cumulative particle size distribution is determined from the particle size of the obtained inorganic filler, and the particle size at which the cumulative probability is 50% in the number-based cumulative particle size distribution is determined as the median diameter D 50 of the inorganic filler.
  • the first sealing layer 60A is formed by attaching the capacitor part 10 from both main surfaces of the capacitor part 10, for example, by thermocompression bonding an insulating resin sheet, or by applying an insulating resin paste and then thermosetting it. Formed to seal.
  • the insulating material forming the second sealing layer 60B may contain an insulating resin.
  • Examples of the insulating resin contained in the insulating material constituting the second sealing layer 60B include epoxy resin, phenol resin, and polyimide resin.
  • the insulating materials forming the first sealing layer 60A and the second sealing layer 60B contain different insulating resins.
  • the insulating materials constituting the plurality of sealing layers contain different insulating resins refers to at least the types of insulating resins with respect to the insulating materials constituting the plurality of sealing layers. It means that they are different from each other, and preferably means that in addition to the type of insulating resin, the ratio of the content of the insulating resin to the total amount of the insulating material is different from each other.
  • the first sealing layer 60A and the second sealing layer 60B contain different insulating resins, the first sealing layer 60A and the second sealing layer 60B are different from each other. They tend to have different characteristics.
  • the first sealing layer 60A mainly plays the role of sealing the capacitor section 10, and both main surfaces of the sealing section 60, by extension, the capacitor array 1.
  • the second sealing layer 60B mainly plays the role of flattening both main surfaces. Therefore, it is preferable that the first sealing layer 60A and the second sealing layer 60B have different characteristics from each other.
  • the insulating materials forming the first sealing layer 60A and the second sealing layer 60B may contain the same insulating resin.
  • the insulating materials constituting the plurality of sealing layers contain the same insulating resin refers to at least the type of insulating resin with respect to the insulating materials constituting the plurality of sealing layers. are the same, and preferably, in addition to the type of insulating resin, the ratio of the content of the insulating resin to the total amount of the insulating material is the same.
  • the insulating material constituting the second sealing layer 60B may further contain an inorganic filler.
  • Examples of the inorganic filler contained in the insulating material constituting the second sealing layer 60B include silica filler, alumina filler, and the like.
  • the inorganic fillers contained in the insulating materials constituting the first sealing layer 60A and the second sealing layer 60B may be the same or different at least in kind.
  • the median diameter D 50 of the inorganic filler contained in the insulating material constituting the first sealing layer 60A and the second sealing layer 60B may be the same or different.
  • the ratio of the content of the inorganic filler to the total amount of the insulating material may be the same or different.
  • the insulating material constituting the second sealing layer 60B may further contain glass cloth.
  • the rigidity of the second sealing layer 60B is easily improved, so that the flatness of the second sealing layer 60B is easily maintained. As a result, the flatness of the capacitor array 1 is easily maintained.
  • Examples of the insulating material containing glass cloth include prepreg.
  • the second sealing layer 60B can be formed, for example, by thermocompression bonding an insulating resin sheet after the first sealing layer 60A is formed by the method described above, or by applying an insulating resin paste and then thermosetting it. etc., and is formed adjacent to the first sealing layer 60A on the side opposite to the capacitor section 10.
  • the heat treatment when forming the second sealing layer 60B will remove the already formed first sealing layer 60B.
  • the glass transition temperature of the insulating material constituting the second sealing layer 60B is It is preferable that the glass transition temperature is lower than the glass transition temperature of the insulating material constituting the layer 60A.
  • the glass transition temperature of the insulating material constituting the second sealing layer 60B may be the same as the glass transition temperature of the insulating material constituting the first sealing layer 60A, or It may be higher than the glass transition temperature of the insulating material constituting 60A.
  • the insulating material constituting the second sealing layer 60B When the glass transition temperature of the insulating material constituting the second sealing layer 60B is higher than the glass transition temperature of the insulating material constituting the first sealing layer 60A, the insulating material constituting the second sealing layer 60B Compared to the case where the glass transition temperature of the material is lower than the glass transition temperature of the insulating material constituting the first sealing layer 60A, even if heat treatment is performed in the manufacturing process of the capacitor array 1, the second sealing layer The flatness of both main surfaces of the sealing portion 60 constituted by the sealing layer 60B, and thus of both main surfaces of the capacitor array 1, can be easily maintained.
  • the glass transition temperature of the insulating material constituting the sealing layer is measured by simultaneous thermogravimetric and differential thermal measurement (TG-DTA) or differential scanning calorimetry (DSC).
  • the linear expansion coefficient in the thickness direction T of the second sealing layer 60B is preferably smaller than the linear expansion coefficient in the thickness direction T of the first sealing layer 60A.
  • the linear expansion coefficient in the thickness direction T of the second sealing layer 60B is smaller than that of the first sealing layer 60A in the thickness direction T.
  • the linear expansion coefficient in the thickness direction T of the first sealing layer 60A or more is greater than or equal to the linear expansion coefficient in the thickness direction T of the first sealing layer 60A.
  • the linear expansion coefficient in the thickness direction T of the second sealing layer 60B may be the same as the linear expansion coefficient in the thickness direction T of the first sealing layer 60A.
  • the coefficient of linear expansion may be larger than the coefficient of linear expansion.
  • thermomechanical analysis TMA
  • the first sealing layer 60A has a first insulating part 61 that covers both main surfaces of the plurality of capacitor parts 10.
  • the first insulating section 61 covers the cathode layer 40 and the mask layer 50 that constitute both main surfaces of the plurality of capacitor sections 10.
  • the first insulating section 61 overlaps the plurality of capacitor sections 10 when viewed from the thickness direction T.
  • the maximum dimension da1 in the thickness direction T of the first insulating part 61 of the first sealing layer 60A and the thickness direction of the second sealing layer 60B is preferably different from each other.
  • the maximum dimension da1 in the thickness direction T of the first insulating part 61 of the first sealing layer 60A is equal to the thickness direction of the second sealing layer 60B. It is preferably larger than the maximum dimension db1 at T.
  • the first insulating part 61 follows the surface shape of the capacitor part 10, it becomes easy to flatten the main surface of the first insulating part 61 on the side opposite to the capacitor part 10.
  • both main surfaces of the sealing portion 60 and, by extension, both main surfaces of the capacitor array 1 can be easily made flat.
  • the thickness direction of the first insulating part 61 of the first sealing layer 60A with respect to the maximum dimension db1 in the thickness direction T of the second sealing layer 60B is preferably 110% or more.
  • the thickness direction of the first insulating part 61 of the first sealing layer 60A with respect to the maximum dimension db1 in the thickness direction T of the second sealing layer 60B is preferably 500% or less.
  • the maximum dimension da1 in the thickness direction T of the first insulating section 61 of the first sealing layer 60A in the region on one of the two main surfaces of the sealing section 60 is 5 ⁇ m or more.
  • the maximum dimension da1 in the thickness direction T of the first insulating portion 61 of the first sealing layer 60A is preferably 100 ⁇ m or less.
  • the maximum dimension db1 in the thickness direction T of the second sealing layer 60B in the region on one of the two main surfaces of the sealing portion 60 is 100 ⁇ m or less.
  • the maximum dimension db1 in the thickness direction T of the second sealing layer 60B in the region on one of the two main surfaces of the sealing portion 60 is 5 ⁇ m or more.
  • the ratio (da2/da1) of the minimum dimension da2 in the thickness direction T of the insulating portion 61 may be 50% or less. In this case, it can be said that a large step exists on one main surface of the capacitor section 10 located on the one main surface side of the sealing section 60.
  • the plurality of sealing layers including the first sealing layer 60A and the second sealing layer 60B allow the capacitor to This makes it possible to suppress deterioration in the flatness of the array 1.
  • the ratio (da2/da1) of the minimum dimension da2 in the thickness direction T of the insulating portion 61 may be 5% or more.
  • the maximum dimension da1 in the thickness direction T of the first insulating section 61 of the first sealing layer 60A is the thickness direction of the portion of the first sealing layer 60A that overlaps with the plurality of capacitor sections 10 when viewed from the thickness direction T. This corresponds to the maximum dimension at T.
  • the maximum dimension da1 in the thickness direction T of the first insulating section 61 of the first sealing layer 60A is between the main surface of the first insulating section 61 opposite to the capacitor section 10 and the mask. This corresponds to the distance in the thickness direction T between the anode plate 20 of the layer 50 and the opposite main surface.
  • the minimum dimension da2 in the thickness direction T of the first insulating section 61 of the first sealing layer 60A is the thickness direction of the portion of the first sealing layer 60A that overlaps with the plurality of capacitor sections 10 when viewed from the thickness direction T. This corresponds to the minimum dimension in T.
  • the minimum dimension da2 in the thickness direction T of the first insulating section 61 of the first sealing layer 60A is between the main surface of the first insulating section 61 opposite to the capacitor section 10 and the cathode This corresponds to the distance in the thickness direction T between the main surface of the layer 40 opposite to the anode plate 20, here, the main surface of the conductor layer 42 opposite to the anode plate 20.
  • the maximum dimension db1 in the thickness direction T of the second sealing layer 60B is the difference between the main surface of the second sealing layer 60B on the opposite side to the capacitor section 10 and the main surface of the second sealing layer 60B on the capacitor section 10 side. This corresponds to the maximum distance in the thickness direction T between.
  • the maximum and minimum dimensions in the thickness direction of the sealing layer are determined as follows. First, by cutting, polishing, etc. the capacitor array, a cross section along the thickness direction in which the target sealing layer is exposed, here, the first sealing layer and the second sealing layer are exposed as shown in FIG. so that a cross section along the thickness direction appears. Next, an image of the cross section is taken using a scanning electron microscope or the like. Subsequently, in the photographed cross-sectional image, the region where the first insulating portion of the first sealing layer exists and the region where the second sealing layer exists are confirmed by an analysis method such as energy dispersive X-ray analysis.
  • the maximum dimension in the thickness direction of the first insulating part of the first sealing layer, the minimum dimension in the thickness direction of the first insulating part of the first sealing layer, and the second The maximum dimension in the thickness direction of the sealing layer is measured.
  • the maximum dimension in the thickness direction T of the first insulating part 61 of the first sealing layer 60A, the minimum dimension in the thickness direction T of the first insulating part 61 of the first sealing layer 60A, and the second sealing layer Regarding the maximum dimension in the thickness direction T of 60B the aspect in the area on the side of one of both main surfaces of the sealing part 60 has been described, but the area on the side of the other main surface of both main surfaces of the sealing part 60 It is preferable that the same aspect be applied to the region.
  • the first sealing layer 60A further includes a second insulating part 62 that divides the plurality of capacitor parts 10 into each part.
  • the second insulating section 62 is filled between the two capacitor sections 10 so as to separate the two capacitor sections 10 from each other.
  • the first sealing layer 60A further includes a third insulating part 63 that penetrates each of the plurality of capacitor parts 10 in the thickness direction T.
  • the third insulating section 63 penetrates the anode plate 20 and mask layer 50 of each of the plurality of capacitor sections 10 in the thickness direction T.
  • the first sealing layer 60A has the first insulating part 61, the second insulating part 62, and the third insulating part 63, the first insulating part 61, the second insulating part 62, and the third insulating part
  • the portion 63 is provided so as to follow the surface shape of the capacitor portion 10.
  • the first sealing layer 60A has the first insulating part 61, the second insulating part 62, and the third insulating part 63, as shown in FIG.
  • the portion 62 and the third insulating portion 63 may be integrated, and the interface between each insulating portion may not be exposed.
  • the first insulating part 61, the second insulating part 62, and the third insulating part 63 may not be integrated, and the interface between each insulating part may be exposed.
  • the capacitor array 1 further includes a through-hole conductor 70A.
  • the through-hole conductor 70A penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T.
  • the through-hole conductor 70A penetrates in the thickness direction T, in addition to the capacitor part 10, the first insulating part 61 of the first sealing layer 60A and the second sealing layer 60B. There is.
  • the through-hole conductor 70A is preferably provided on at least the inner wall surface of the through hole 71A that penetrates the capacitor portion 10 and the sealing portion 60 in the thickness direction T.
  • the through-hole conductor 70A is provided on the inner wall surface of the through-hole 71A rather than the entire inside of the through-hole 71A.
  • the through-hole conductor 70A is electrically connected to the anode plate 20 on the inner wall surface of the through-hole 71A. More specifically, the through-hole conductor 70A is preferably electrically connected to the end surface of the anode plate 20 that faces the inner wall surface of the through-hole 71A in the planar direction. Thereby, the anode plate 20 is electrically led out to the outside via the through-hole conductor 70A.
  • the core portion 21 and the porous layer 22 are exposed on the end surface of the anode plate 20 that is electrically connected to the through-hole conductor 70A.
  • the porous layer 22 is also electrically connected to the through-hole conductor 70A.
  • the through-hole conductor 70A When viewed from the thickness direction T, the through-hole conductor 70A is preferably electrically connected to the anode plate 20 over the entire circumference of the through-hole 71A. In this case, since the connection resistance between the anode plate 20 and the through-hole conductor 70A tends to decrease, the equivalent series resistance (ESR) of the capacitor section 10 tends to decrease.
  • ESR equivalent series resistance
  • the through-hole conductor 70A is formed, for example, as follows. First, a through hole 71A passing through the capacitor section 10 and the sealing section 60 in the thickness direction T is formed by drilling, laser processing, or the like. Then, the through-hole conductor 70A is formed by metallizing the inner wall surface of the through-hole 71A with a metal material containing a low-resistance metal such as copper, gold, or silver. When forming the through-hole conductor 70A, processing is facilitated by, for example, metalizing the inner wall surface of the through-hole 71A by electroless copper plating, electrolytic copper plating, or the like.
  • the method of forming the through-hole conductor 70A in addition to the method of metalizing the inner wall surface of the through-hole 71A, a method of filling the through-hole 71A with a metal material, a composite material of metal and resin, etc. may be used. .
  • the capacitor array 1 further includes an anode connection layer 72 provided between the anode plate 20 and the through-hole conductor 70A in the planar direction.
  • the anode connection layer 72 is in contact with both the anode plate 20 and the through-hole conductor 70A.
  • the anode connection layer 72 serves as a barrier layer for the anode plate 20, more specifically, as a barrier layer for the anode plate 20, and more specifically, as a barrier layer for the anode plate 20 and It functions as a barrier layer for the porous layer 22.
  • the anode connection layer 72 functions as a barrier layer for the anode plate 20
  • dissolution of the anode plate 20 that occurs during chemical treatment for forming an external electrode layer 80A, etc., which will be described later is suppressed, and as a result, infiltration of the chemical liquid into the capacitor section 10 is suppressed. Since this is suppressed, the reliability of the capacitor array 1 can be easily improved.
  • anode plate 20 and the through-hole conductor 70A are electrically connected via the anode connection layer 72.
  • the dimension of the anode connection layer 72 in the thickness direction T is preferably larger than the dimension of the anode plate 20 in the thickness direction T. In this case, since the entire end surface of the anode plate 20 is covered with the anode connection layer 72, the barrier properties of the anode connection layer 72 against the anode plate 20 are likely to be improved.
  • the dimension of the anode connection layer 72 in the thickness direction T is preferably larger than 100% and 200% or less of the dimension of the anode plate 20 in the thickness direction T.
  • the dimension of the anode connection layer 72 in the thickness direction T may be the same as the dimension of the anode plate 20 in the thickness direction T, or may be smaller than the dimension of the anode plate 20 in the thickness direction T.
  • the through-hole conductor 70A When viewed from the thickness direction T, the through-hole conductor 70A is preferably connected to the anode connection layer 72 over the entire circumference of the through-hole 71A.
  • the contact area between the through-hole conductor 70A and the anode connection layer 72 becomes large, the connection resistance between the through-hole conductor 70A and the anode connection layer 72 tends to decrease.
  • the connection resistance between the anode plate 20 and the through-hole conductor 70A tends to decrease, so the equivalent series resistance of the capacitor section 10 tends to decrease.
  • the adhesion between the through-hole conductor 70A and the anode connection layer 72 is easily improved, problems such as peeling between the through-hole conductor 70A and the anode connection layer 72 due to thermal stress are less likely to occur.
  • the anode connection layer 72 includes a layer containing nickel as a main component. In this case, damage to the metal (for example, aluminum) constituting the anode plate 20 is reduced, so that the barrier properties of the anode connection layer 72 with respect to the anode plate 20 are easily improved.
  • anode connection layer 72 may not be provided between the anode plate 20 and the through-hole conductor 70A in the planar direction.
  • the through-hole conductor 70A may be directly connected to the end surface of the anode plate 20.
  • the capacitor array 1 further includes an external electrode layer 80A electrically connected to the through-hole conductor 70A.
  • the external electrode layer 80A is provided on the surface of the through-hole conductor 70A, and functions as a connection terminal of the capacitor array 1 (capacitor section 10).
  • the external electrode layer 80A is electrically connected to the anode plate 20 via the through-hole conductor 70A, and functions as a connection terminal for the anode plate 20.
  • Examples of the constituent material of the external electrode layer 80A include metal materials containing low-resistance metals such as silver, gold, and copper.
  • the external electrode layer 80A is formed, for example, by plating the surface of the through-hole conductor 70A.
  • silver filler is used as a constituent material of the external electrode layer 80A.
  • a mixed material of a resin and at least one conductive filler selected from the group consisting of , copper filler, nickel filler, and carbon filler may be used.
  • the capacitor array 1 further includes a resin filling portion 90A in which the through hole 71A is filled with a resin material.
  • the resin filling portion 90A is provided in a space surrounded by the through-hole conductor 70A on the inner wall surface of the through-hole 71A.
  • the coefficient of thermal expansion of the resin filled portion 90A is higher than that of the through-hole conductor 70A. More specifically, the coefficient of thermal expansion of the resin material filled in the through-hole 71A is preferably higher than the coefficient of thermal expansion of the constituent material (for example, copper) of the through-hole conductor 70A.
  • the resin filling portion 90A more specifically, the resin material filled in the through hole 71A expands in a high temperature environment, so that the through hole conductor 70A moves from the inside of the through hole 71A to the outside. Since it is pressed against the inner wall surface of the through-hole conductor 71A, the occurrence of delamination of the through-hole conductor 70A is sufficiently suppressed.
  • the coefficient of thermal expansion of the resin filling portion 90A may be the same as the coefficient of thermal expansion of the through-hole conductor 70A, or may be lower than the coefficient of thermal expansion of the through-hole conductor 70A. More specifically, the coefficient of thermal expansion of the resin material filled in the through-hole 71A may be the same as that of the constituent material of the through-hole conductor 70A, or the thermal expansion coefficient of the resin material filled in the through-hole 71A may be the same as that of the constituent material of the through-hole conductor 70A. It may be lower than the expansion rate.
  • the capacitor array 1 does not need to have the resin filling part 90A.
  • the through-hole conductor 70A is provided not only on the inner wall surface of the through-hole 71A but also throughout the inside of the through-hole 71A.
  • the capacitor array 1 further includes a through-hole conductor 70B.
  • the through-hole conductor 70B penetrates the capacitor portion 10 and the sealing portion 60, or more specifically, the sealing portion 60 in the thickness direction T. In the example shown in FIG. 2 and the like, the through-hole conductor 70B penetrates the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B.
  • the through-hole conductor 70B is preferably provided on at least the inner wall surface of the capacitor portion 10 and the sealing portion 60, or more specifically, the through hole 71B that penetrates the sealing portion 60 in the thickness direction T.
  • the through-hole conductor 70B is provided on the inner wall surface of the through-hole 71B rather than the entire inside of the through-hole 71B.
  • the through-hole conductor 70B is formed, for example, as follows. First, a through hole passing through the capacitor portion 10 in the thickness direction T is formed by drilling, laser processing, or the like. Next, by forming the first sealing layer 60A so as to seal the capacitor part 10 from both main surfaces of the capacitor part 10, a third insulating layer in which the above-mentioned through hole is filled with an insulating material is formed. A portion 63 is formed. Further, a second sealing layer 60B is formed adjacent to the first sealing layer 60A on the opposite side of the capacitor section 10. Then, a through hole 71B is formed by performing drilling, laser processing, etc. on the third insulating portion 63 of the first sealing layer 60A and the second sealing layer 60B.
  • a third The insulating portion 63 is provided. Thereafter, a through-hole conductor 70B is formed by metallizing the inner wall surface of the through-hole 71B with a metal material containing a low-resistance metal such as copper, gold, or silver.
  • a metal material containing a low-resistance metal such as copper, gold, or silver.
  • the method of forming the through-hole conductor 70B in addition to the method of metalizing the inner wall surface of the through-hole 71B, a method of filling the through-hole 71B with a metal material, a composite material of metal and resin, etc. may be used. .
  • the third insulating part 63 is formed in the capacitor part in the planar direction. 10 and the through-hole conductor 70B, and further between the anode plate 20 and the through-hole conductor 70B.
  • the third insulating portion 63 is in contact with both the capacitor portion 10 and the through-hole conductor 70B, and furthermore, with both the anode plate 20 and the through-hole conductor 70B.
  • the third insulating portion 63 of the first sealing layer 60A is provided between the capacitor portion 10 and the through-hole conductor 70B, and further between the anode plate 20 and the through-hole conductor 70B in the planar direction. , the insulation between the anode plate 20 and the through-hole conductor 70B, as well as the insulation between the anode plate 20 and the cathode layer 40, is ensured, and short circuits between the two are prevented.
  • the third insulating part 63 of the first sealing layer 60A is in contact with both the capacitor part 10 and the through-hole conductor 70B, and furthermore, with both the anode plate 20 and the through-hole conductor 70B, as shown in FIG. It is preferable that the core portion 21 and the porous layer 22 be exposed at the end surface of the anode plate 20 that is in contact with the third insulating portion 63 . In this case, the contact area between the porous layer 22 and the third insulating part 63 increases, which improves the adhesion between them, resulting in problems such as peeling between the porous layer 22 and the third insulating part 63. is less likely to occur.
  • the constituent material of the mask layer 50 is the pores of the porous layer 22. It is preferable that a mask layer 50 that penetrates and spreads inside the porous layer 22 is provided around the through-hole conductor 70B. In this case, the insulation between the anode plate 20 and the through-hole conductor 70B, as well as the insulation between the anode plate 20 and the cathode layer 40, is sufficiently ensured, and a short circuit between the two is sufficiently prevented.
  • the insulating material constituting the third insulating part 63 is porous. It is preferable that the particles penetrate into the pores of the quality layer 22. In this case, the mechanical strength of the porous layer 22 is improved, and the occurrence of delamination due to pores in the porous layer 22 is suppressed.
  • the coefficient of thermal expansion of the third insulating portion 63 of the first sealing layer 60A is preferably higher than the coefficient of thermal expansion of the through-hole conductor 70B. More specifically, the coefficient of thermal expansion of the insulating material constituting the third insulating portion 63 is preferably higher than the coefficient of thermal expansion of the material (for example, copper) constituting the through-hole conductor 70B.
  • the third insulating part 63 more specifically, the insulating material constituting the third insulating part 63 expands in a high-temperature environment, and the porous layer 22 and the through-hole conductor 70B are pressed down. The occurrence of delamination is sufficiently suppressed.
  • the coefficient of thermal expansion of the third insulating portion 63 of the first sealing layer 60A may be the same as the coefficient of thermal expansion of the through-hole conductor 70B, or may be lower than the coefficient of thermal expansion of the through-hole conductor 70B. good. More specifically, the coefficient of thermal expansion of the insulating material constituting the third insulating portion 63 may be the same as the coefficient of thermal expansion of the material constituting the through-hole conductor 70B, or The coefficient of thermal expansion may be lower than that of
  • the capacitor array 1 further includes an external electrode layer 80B electrically connected to the through-hole conductor 70B.
  • external electrode layer 80B is provided on the surface of through-hole conductor 70B, and functions as a connection terminal of capacitor array 1 (capacitor section 10).
  • Examples of the constituent material of the external electrode layer 80B include metal materials containing low-resistance metals such as silver, gold, and copper.
  • the external electrode layer 80B is formed, for example, by plating the surface of the through-hole conductor 70B.
  • silver filler is used as a constituent material of the external electrode layer 80B.
  • a mixed material of a resin and at least one conductive filler selected from the group consisting of , copper filler, nickel filler, and carbon filler may be used.
  • the constituent materials of the external electrode layer 80A and the external electrode layer 80B are preferably the same, at least in terms of type, but may be different from each other.
  • each of the plurality of capacitor sections 10 is provided with an external electrode layer 80A electrically connected to the anode plate 20 and an external electrode layer 80B electrically connected to the cathode layer 40.
  • at least one of the external electrode layer 80A and the external electrode layer 80B may be provided in common among the plurality of capacitor sections 10.
  • the external electrode layer 80A and the external electrode layer 80B are provided on both main surfaces of the sealing section 60, but they are provided only on one main surface of the sealing section 60. Good too.
  • the capacitor array 1 further includes a via conductor 73 that penetrates the sealing portion 60 in the thickness direction T and is connected to the cathode layer 40 and the external electrode layer 80B.
  • the via conductor 73 penetrates the first insulating part 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T, and passes through the cathode layer 40 and the external electrode layer. It is connected to 80B.
  • Examples of the constituent material of the via conductor 73 include metal materials containing low-resistance metals such as silver, gold, and copper.
  • the via conductor 73 is formed by plating the inner wall surface of the through hole that penetrates the first insulating part 61 of the first sealing layer 60A and the second sealing layer 60B in the thickness direction T with the above-mentioned metal material. It is formed by performing heat treatment after filling with conductive paste.
  • FIG. 6 is a schematic cross-sectional view showing an enlarged view of a via conductor and its surroundings in a capacitor array in which the insulating material constituting the second sealing layer contains glass cloth.
  • the insulating material constituting the second sealing layer 60B contains glass cloth, as shown in FIG.
  • the glass cloth G can easily protrude inward from the inner wall surface of the portion where the glass cloth G is attached.
  • the via conductor 73 is formed by the above-described method in a through hole in which the glass cloth G protrudes, stress is dispersed by the protrusion of the glass cloth G, thereby suppressing the occurrence of cracks in the via conductor 73.
  • the through-hole conductor 70B is electrically connected to the cathode layer 40 via the external electrode layer 80B and the via conductor 73. In this way, the through-hole conductor 70B is preferably electrically connected to the cathode layer 40.
  • the external electrode layer 80B is electrically connected to the cathode layer 40 via the via conductor 73, and functions as a connection terminal for the cathode layer 40.
  • the capacitor array 1 further includes a resin filling portion 90B in which the through hole 71B is filled with a resin material.
  • the resin filling portion 90B is provided in a space surrounded by the through-hole conductor 70B on the inner wall surface of the through-hole 71B.
  • the coefficient of thermal expansion of the resin filling portion 90B is higher than that of the through-hole conductor 70B. More specifically, it is preferable that the coefficient of thermal expansion of the resin material filled in the through hole 71B is higher than the coefficient of thermal expansion of the constituent material (for example, copper) of the through hole conductor 70B.
  • the resin filling part 90B more specifically, the resin material filled in the through hole 71B expands in a high temperature environment, so that the through hole conductor 70B moves from the inside of the through hole 71B to the outside. Since it is pressed against the inner wall surface of the through-hole conductor 71B, the occurrence of delamination of the through-hole conductor 70B is sufficiently suppressed.
  • the coefficient of thermal expansion of the resin filling portion 90B may be the same as the coefficient of thermal expansion of the through-hole conductor 70B, or may be lower than the coefficient of thermal expansion of the through-hole conductor 70B. More specifically, the thermal expansion coefficient of the resin material filled in the through hole 71B may be the same as that of the constituent material of the through-hole conductor 70B, or the thermal expansion coefficient of the resin material filled in the through-hole conductor 71B may be the same as that of the constituent material of the through-hole conductor 70B. It may be lower than the expansion rate.
  • the capacitor array 1 does not need to have the resin filling part 90B.
  • the through-hole conductor 70B is provided not only on the inner wall surface of the through-hole 71B but also throughout the inside of the through-hole 71B.
  • the capacitor section is not limited to an electrolytic capacitor including the solid electrolytic capacitor described above.
  • the capacitor section includes, for example, a ceramic capacitor using barium titanate, a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO 2 ), hydrogen fluoride (HF), etc., MIM ( A trench type capacitor or the like having a metal insulator structure may also be configured.
  • the capacitor part is made of a capacitor based on a metal such as aluminum. It is preferable to configure an electrolytic capacitor, and more preferably to configure an electrolytic capacitor based on a metal such as aluminum.
  • the capacitor array of the present invention is used, for example, in composite electronic components.
  • a composite electronic component includes, for example, the capacitor array of the present invention and an electronic component electrically connected to the external electrode layer of the capacitor array of the present invention.
  • the electronic component electrically connected to the external electrode layer may be a passive element, an active element, or both a passive element and an active element. , a composite of a passive element and an active element.
  • passive elements examples include inductors and the like.
  • Active elements include memory, GPU (Graphical Processing Unit), CPU (Central Processing Unit), MPU (Micro Processing Unit), PMIC (Power Management IC), etc.
  • the capacitor array of the present invention When the capacitor array of the present invention is used in a composite electronic component, the capacitor array of the present invention is treated as a substrate on which the electronic component is mounted, for example. Therefore, by forming the capacitor array of the present invention in the form of a sheet as a whole and further forming the electronic components mounted on the capacitor array of the present invention in the form of a sheet, through-hole conductors penetrating the electronic components in the thickness direction, It becomes possible to electrically connect the capacitor array of the present invention and electronic components in the thickness direction. As a result, it becomes possible to configure passive elements and active elements as electronic components like a collective module.
  • a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which the converted DC voltage is supplied.
  • a circuit layer is formed on one main surface of a capacitor matrix sheet on which a plurality of capacitor arrays of the present invention are laid out, and then the circuit layer is electrically connected to a passive element or an active element as an electronic component. You can also connect directly.
  • the capacitor array of the present invention may be placed in a cavity provided in advance on a substrate, filled with resin, and then a circuit layer may be formed on the resin.
  • a passive element or an active element as another electronic component may be mounted in another cavity portion of the same substrate.
  • the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, an outer layer made of resin may be formed, a circuit layer may be formed, and the circuit layer may be used as a passive element or an active element as an electronic component. It may be electrically connected to the element.
  • a smooth carrier such as a wafer or glass
  • an outer layer made of resin may be formed
  • a circuit layer may be formed, and the circuit layer may be used as a passive element or an active element as an electronic component. It may be electrically connected to the element.
  • a plurality of capacitor parts arranged in a plane in a plane direction perpendicular to the thickness direction, a sealing portion that seals the plurality of capacitor portions from both main surfaces opposite to each other in the thickness direction of the plurality of capacitor portions, and is made of an insulating material;
  • the sealing portion is formed by laminating a plurality of sealing layers in the thickness direction,
  • the plurality of sealing layers include a first sealing layer located closest to the capacitor section in the thickness direction, and a first sealing layer located on a side opposite to the capacitor section from the first sealing layer in the thickness direction, and , a second sealing layer forming both principal surfaces facing each other in the thickness direction of the sealing portion.
  • the capacitor section includes an anode plate having a porous layer on at least one of the two principal surfaces facing each other in the thickness direction, a dielectric layer provided on the surface of the porous layer, and a dielectric layer provided on the surface of the porous layer.
  • ⁇ 3> The capacitor array according to ⁇ 1> or ⁇ 2>, wherein the insulating material constituting the first sealing layer contains an insulating resin.
  • ⁇ 4> The capacitor array according to ⁇ 3>, wherein the insulating material constituting the first sealing layer further contains an inorganic filler.
  • ⁇ 6> The capacitor array according to any one of ⁇ 1> to ⁇ 5>, wherein the insulating material constituting the second sealing layer contains an insulating resin.
  • ⁇ 10> The capacitor array according to any one of ⁇ 1> to ⁇ 9>, wherein the linear expansion coefficient of the second sealing layer in the thickness direction is smaller than the linear expansion coefficient of the first sealing layer in the thickness direction.
  • ⁇ 11> The capacitor array according to any one of ⁇ 1> to ⁇ 10>, wherein the first sealing layer has a first insulating part that covers both main surfaces of the plurality of capacitor parts.
  • ⁇ 12> In a region on one main surface side of both main surfaces of the sealing part, the maximum dimension in the thickness direction of the first insulating part of the first sealing layer and the thickness direction of the second sealing layer.
  • the maximum dimension in the thickness direction of the first insulating part of the first sealing layer is the maximum dimension in the thickness direction of the second sealing layer.
  • the capacitor array according to ⁇ 12> which is larger than the maximum dimension of the capacitor array.
  • the thickness direction of the first insulating part of the first sealing layer is relative to the maximum dimension in the thickness direction of the second sealing layer.
  • the second sealing layer has a maximum dimension in the thickness direction of 100 ⁇ m or less in a region on one main surface side of both main surfaces of the sealing part. Capacitor array as described.
  • the first insulating portion of the first sealing layer has a maximum dimension in the thickness direction of The capacitor array according to any one of ⁇ 13> to ⁇ 16>, wherein the ratio of the minimum dimension of the insulating portion in the thickness direction is 50% or less.
  • the first sealing layer further includes a third insulating part that penetrates each of the plurality of capacitor parts in the thickness direction.
  • ⁇ 20> The capacitor array according to any one of ⁇ 1> to ⁇ 19>, further comprising a through-hole conductor that penetrates the capacitor section and the sealing section in the thickness direction.
  • Capacitor array 10 Capacitor section 20 Anode plate 21 Core section 22 Porous layer 30 Dielectric layer 40 Cathode layer 41 Solid electrolyte layer 42 Conductive layer 42A Conductive resin layer 42B Metal layer 50 Mask layer 60 Sealing section 60A First sealing Sealing layer 60B Second sealing layer 61 First insulating part 62 Second insulating part 63 Third insulating part 70A, 70B Through hole conductor 71A, 71B Through hole 72 Anode connection layer 73 Via conductor 80A, 80B External electrode layer 90A, 90B Resin filling part da1 Maximum dimension in the thickness direction of the first insulating part of the first sealing layer da2 Minimum dimension in the thickness direction of the first insulating part of the first sealing layer db1 Maximum dimension in the thickness direction of the second sealing layer G Glass cloth T Thickness direction U First direction V Second direction

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