WO2023236937A1 - Capteur d'image et dispositif électronique - Google Patents

Capteur d'image et dispositif électronique Download PDF

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Publication number
WO2023236937A1
WO2023236937A1 PCT/CN2023/098541 CN2023098541W WO2023236937A1 WO 2023236937 A1 WO2023236937 A1 WO 2023236937A1 CN 2023098541 W CN2023098541 W CN 2023098541W WO 2023236937 A1 WO2023236937 A1 WO 2023236937A1
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WO
WIPO (PCT)
Prior art keywords
pixel point
pixel
light
image sensor
layer
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Application number
PCT/CN2023/098541
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English (en)
Chinese (zh)
Inventor
谭锦丹
杨哲宇
何伟
祝夭龙
Original Assignee
北京灵汐科技有限公司
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Publication of WO2023236937A1 publication Critical patent/WO2023236937A1/fr

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Definitions

  • Embodiments of the present disclosure relate to the technical field of image sensors, and in particular, to an image sensor and an electronic device.
  • CMOS image sensor is a device that converts optical information into electrical signals.
  • CMOS image sensors include front-side illumination (FSI) image sensors and back-illumination (back side illumination, BSI) image sensor.
  • FSI front-side illumination
  • BSI back-illumination
  • Embodiments of the present disclosure provide an image sensor and an electronic device.
  • an embodiment of the present disclosure provides an image sensor, including: a plurality of pixels arranged in a preset arrangement, at least part of the pixels including at least one pixel point, the pixel point including The light input layer, the light adjustment layer and the photosensitive layer are arranged; the light input layer is used to receive incident light; the light adjustment layer is arranged on the backlight side of the light input layer, and is used to process the incident light Adjustment; the photosensitive layer is provided on the backlight side of the light adjustment layer; an isolation ring is provided on the light adjustment layer, and the first end of the isolation ring is attached to the backlight side of the light input layer, so The second end of the isolation ring is close to the light-receiving surface of the photosensitive layer, and the isolation ring is arranged around the periphery of the pixel point.
  • the material of the isolation ring is a light-blocking material, a conductive material, or a light-blocking and conductive material.
  • the image sensor further includes a trench isolation portion.
  • the trench isolation portion is disposed on the photosensitive layer and surrounds the periphery of the pixel point. A first end of the trench isolation portion Fits the isolation ring.
  • the isolation ring made of conductive material or light-blocking and conductive material is connected to the trench isolation part.
  • the trench isolation portion is a capacitive trench isolation portion or a resistive trench isolation portion.
  • the pixel further includes a photoelectric converter for converting the incident light passing through the light adjustment layer into an electrical signal.
  • the photoelectric converter is disposed on the photosensitive layer and located on the photosensitive layer. within the area surrounded by the trench isolation portion.
  • the light input layer includes a lens and a filter film, wherein the lens is used to collect the incident light and guide the incident light to the filter film; the filter film is Filtering the incident light so that the incident light with a predetermined wavelength enters the photosensitive layer.
  • the pixels include at least one pixel that senses graphics and at least one pixel that senses brightness; wherein, after the filter film corresponding to the pixel that senses the pattern filters the incident light, the monochromatic light Entering the photosensitive layer; after the filter film corresponding to the pixel point that senses brightness filters the incident light, the white light enters the photosensitive layer.
  • the photosensitive area corresponding to the pixel point of the perceived brightness is greater than or equal to the photosensitive area corresponding to the pixel point of the perceived pattern.
  • the monochromatic light includes any one of red light, blue light, and green light.
  • the light adjustment layer includes an anti-reflective layer; or, the light adjustment layer includes an anti-reflective layer and a passivation layer, and the anti-reflective layer is disposed on one side of the light input layer, and the The passivation layer is disposed on one side of the photosensitive layer.
  • the material of the passivation layer includes nitride.
  • the pixel further includes a metal wiring layer, which overlaps the photosensitive layer and is located on the backlight side of the photosensitive layer.
  • the projection of the pixel point on the substrate is an n-gon, where n is an integer greater than or equal to 4.
  • the pixels include first, second, third, fourth and fifth pixels whose projection shapes on the substrate are rectangular, and the first The pixel point, the second pixel point, the third pixel point and the fourth pixel point are pixel points that sense graphics, and the fifth pixel point is a pixel point that senses brightness;
  • the third side of the first pixel point is adjacent to the first side of the second pixel point
  • the fourth side of the second pixel point is adjacent to the second side of the third pixel point.
  • the first side of the third pixel point and the third side of the fourth pixel point are arranged adjacently, the second side of the fourth pixel point and the first pixel point
  • the fourth side is arranged adjacently, and the third side of the fifth pixel is arranged adjacent to the first side of the first pixel and the first side of the fourth pixel;
  • the isolation rings are respectively provided at the periphery of the first pixel point, the second pixel point, the third pixel point, the fourth pixel point and the fifth pixel point.
  • the pixels include first, second, third, fourth, fifth, and sixth pixels whose projection shapes on the substrate are rectangular.
  • the seventh pixel point and the eighth pixel point, the first pixel point, the second pixel point, the third pixel point and the fourth pixel point are pixel points of the perceptual graphics, and the fifth pixel point
  • the point, the sixth pixel point, the seventh pixel point and the eighth pixel point are pixel points that perceive brightness;
  • the third side of the first pixel point is adjacent to the first side of the second pixel point
  • the fourth side of the second pixel point is adjacent to the second side of the third pixel point. arranged adjacently, the first side of the third pixel point and the third side of the fourth pixel point are arranged adjacently, the second side of the fourth pixel point and the first pixel point The fourth side is set adjacent;
  • the third side of the fifth pixel point is adjacent to the first side of the sixth pixel point, and the third side of the sixth pixel point is adjacent to the first side of the first pixel point. arranged adjacently; the fourth side of the sixth pixel point and the second side of the seventh pixel point are arranged adjacently, and the third side of the seventh pixel point and the fourth side of the fourth pixel point are arranged adjacently.
  • the first side of the seventh pixel is adjacent to the third side of the eighth pixel; the second side of the eighth pixel is adjacent to the third side of the eighth pixel.
  • the fourth side of five pixels is set adjacently;
  • the isolation rings are respectively provided around the first pixel point, the second pixel point, the third pixel point and the fourth pixel point; on the first side and the fifth pixel point the second side, the second and third sides of the sixth pixel, the third and fourth sides of the seventh pixel, and the fourth side of the eighth pixel. and the first side is provided with the isolation ring.
  • the pixels include a first pixel point, a second pixel point, a third pixel point and a fourth pixel point whose projection shape on the substrate is a hexagon, and the first pixel point, The second pixel point and the third pixel point are pixel points that sense graphics, and the fourth pixel point is a pixel point that senses brightness;
  • the fourth side of the first pixel point is adjacent to the first side of the second pixel point, and the sixth side of the second pixel point is adjacent to the third side of the third pixel point.
  • the second side of the third pixel point and the fifth side of the first pixel point are arranged adjacently, the first side of the third pixel point and the fourth pixel point.
  • the fourth side is arranged adjacently, and the third side of the fourth pixel point is arranged adjacent to the sixth side of the first pixel point;
  • the isolation rings are respectively provided around the periphery of the first pixel point, the second pixel point, the third pixel point and the fourth pixel point.
  • each pixel in the plurality of pixels includes the same number of pixel points; or, at least some of the pixels in the plurality of pixels include a different number of pixel points.
  • an embodiment of the present disclosure provides an electronic device, including at least one image sensor, wherein the image sensor adopts the image sensor described in any one of the embodiments of the present disclosure.
  • Figure 1 is a schematic structural diagram of a back-illuminated image sensor.
  • FIG. 2 is a schematic structural diagram of an image sensor provided by an embodiment of the present disclosure.
  • FIG. 3 is a top view of a partial structure of a pixel provided by an embodiment of the present disclosure.
  • FIG. 4 is a schematic structural diagram of an image sensor provided by an embodiment of the present disclosure.
  • FIG. 5 is a top view of a pixel structure provided by an embodiment of the present disclosure.
  • FIG. 6 is a schematic structural diagram of a pixel provided by an embodiment of the present disclosure.
  • FIG. 7 is a top view of a pixel structure provided by an embodiment of the present disclosure.
  • FIG. 8 is a top view of a partial structure of an image sensor provided by an embodiment of the present disclosure.
  • FIG. 9 is a schematic structural diagram of a pixel provided by an embodiment of the present disclosure.
  • FIG. 10 is a schematic structural diagram of an electronic device provided by an embodiment of the present disclosure.
  • FIG. 2 is a schematic structural diagram of an image sensor provided by an embodiment of the present disclosure.
  • the image sensor includes multiple pixels, at least some of the pixels are arranged in a preset manner, and the number of pixels can be set arbitrarily as needed.
  • the embodiments of the present disclosure do not limit the arrangement and number of pixels.
  • a plurality of pixels are arranged in an array.
  • At least part of the pixels may include at least one pixel point (for example, each pixel in the plurality of pixels includes a plurality of pixel points; for example, part of the pixels in the plurality of pixels includes a plurality of pixel points, and the remaining part A pixel includes one pixel; for example, each pixel in multiple pixels includes one pixel), multiple pixels are arranged in a preset manner, and the number of pixels can be set as needed. For example, each pixel includes three pixel points or four pixel points. Multiple pixels can be arranged in a Bayer pattern, a cross-X (X-trans) pattern, or other patterns. The embodiment of the present disclosure does not limit the arrangement of multiple pixels.
  • the image sensor shown in FIG. 2 only shows two pixel points, namely the first pixel point 10 and the second pixel point 20 .
  • each pixel includes a light input layer 1, a light input layer 1, and a light input layer 1 stacked sequentially from the light incident side to the substrate 5.
  • Adjustment layer 2 and photosensitive layer 3 where the light input layer 1 is used to receive incident light; the light adjustment layer 2 is provided on the backlight side of the light input layer 1 and is used to adjust the incident light; the photosensitive layer 3 is provided on the light The backlight side of the adjustment layer 2; the isolation ring 21 is provided on the light adjustment layer 2.
  • the first end of the isolation ring 21 is attached to the backlight surface of the light input layer 1, and the second end of the isolation ring 21 is attached to the photosensitive layer 3.
  • the light-receiving surface, and the isolation ring 21 is arranged around the periphery of the pixel point.
  • Figure 2 shows the structure of the image sensor from a head-on perspective. Based on Figure 2, we can understand the hierarchical distribution of the isolation ring 21 in the image sensor. In order to display the structure and position of the isolation ring more intuitively and clearly, Figure 3 shows a top view. The angle of schematically shows an isolation ring.
  • FIG. 3 is a top view of a partial structure of a pixel provided by an embodiment of the present disclosure, which mainly shows the structure of an isolation ring from a top view.
  • the isolation ring 21 in the image sensor is arranged on the light adjustment layer 2.
  • the first end of the isolation ring 21 is attached to the backlight surface of the light input layer 1, and the second end is attached to the light receiving surface of the photosensitive layer 3. surface, so that the thickness of the isolation ring 21 is the same as the thickness of the light adjustment layer 2 .
  • the isolation ring 21 can be arranged around the periphery of the pixel point, so that the incident light entering a certain pixel point is blocked by the isolation ring 21 and will not cause crosstalk in the light adjustment layer 2 and enter other pixel points (such as adjacent pixels), thereby improving the clarity of the image sensor and reducing image distortion.
  • the pixels in the isolation ring 21 can be connected to the isolation ring 21
  • the pixels outside the isolation ring 21 are separated, thereby effectively blocking the light crosstalk and the interference of free electrons between the pixels inside the isolation ring 21 and the pixels outside the isolation ring 21; in addition, a certain pixel can also be treated as a whole, in this
  • An isolation ring 21 is provided around the pixel. This method can separate the pixels inside the isolation ring 21 from the pixels outside the isolation ring 21, thereby effectively blocking the light crosstalk between the pixels inside the isolation ring 21 and the pixels outside the isolation ring 21. and interference from free electrons.
  • the isolation ring 21 of the first pixel point 10 can effectively block the incident light entering the first pixel point 10 from entering the photosensitive layer 3 of the second pixel point 20 through the light adjustment layer 2.
  • the The isolation ring 21 can effectively block the incident light entering the second pixel point 20 from entering the photosensitive layer 3 of the first pixel point 10 through the light adjustment layer 2 .
  • the filter film 12 can transmit any monochromatic light among red light with a wavelength of 625-740 nm, green light with a wavelength of 492-577 nm, and blue light with a wavelength of 440-475 nm.
  • the light adjustment layer 2 may include an anti-reflective layer 22, and the anti-reflective layer 22 may be used to reduce interference of reflected light on the target optical signal.
  • the reflected light is the light generated by the reflection of the incident light from each functional layer in the pixel point.
  • the light adjustment layer 2 may include an anti-reflective layer 22 and a passivation layer 23 .
  • the anti-reflective layer 22 is disposed on one side of the light input layer 1
  • the passivation layer 23 is disposed on one side of the photosensitive layer 3 .
  • the anti-reflection layer 22 can be used to reduce the interference of reflected light on the target light signal
  • the passivation layer 23 can be used to alleviate the degree of oxidation of the photosensitive layer 3 during the process to improve the performance of the image sensor.
  • the anti-reflection layer 22 may include one or more of a silicon oxide layer, a silicon carbide layer, and a silicon oxynitride layer.
  • the material of the passivation layer 23 may include nitride or other materials capable of reducing dark current.
  • the material of the passivation layer 23 may be silicon nitride, that is, the passivation layer 23 is a silicon nitride layer.
  • the anti-reflective layer 22 may include a first anti-reflective layer 221 , a second anti-reflective layer 222 and a passivation layer 23 , wherein the first anti-reflective layer 221 , the second anti-reflective layer 222 and the passivation layer 23 are stacked in sequence, and the first anti-reflection layer 221 is provided on the side of the light input layer 1, and the passivation layer 23 is provided on the side of the photosensitive layer 3.
  • the photosensitive layer 3 can be made of light-transmitting and insulating materials.
  • the image sensor may further include a trench isolation part 32.
  • the trench isolation part 32 may be disposed on the photosensitive layer 3 and is disposed around the periphery of the pixel point.
  • the isolation ring 21 made of conductive material or light-blocking and conductive material can be connected to the trench isolation portion 32, so that the isolation ring 21 and the trench isolation portion 32 can form a conductive structure, so that the isolation ring 21 and the trench isolation portion 32 can form a conductive structure.
  • the free electrons in functional layers such as the light adjustment layer are guided away and play a role in electrostatic protection.
  • the trench isolation portion 32 can be a capacitive trench isolation portion or a resistive trench isolation portion, wherein the capacitive trench isolation portion can conduct free electrons away more effectively.
  • the image sensor may also include an Analog-to-Digital Converter (ADC) 31 for converting the incident light transmitted through the light adjustment layer 2 into an electrical signal, that is, achieving photoelectric conversion.
  • ADC Analog-to-Digital Converter
  • the photoelectric converter 31 can be disposed on the photosensitive layer 3 and located within the area surrounded by the trench isolation portion 32 .
  • the trench isolation part 32 can not only effectively block the crosstalk of incident light to other pixel points, but also effectively block the crosstalk of incident light from other pixel points to the pixel point where it is located, so that the photoelectric converter 31 only receives incident on the pixel point where it is located. Light.
  • the pixel point may also include a metal wiring layer 4, which overlaps the photosensitive layer 3 and is located on the backlight side of the photosensitive layer 3. That is, the metal wiring layer 4 is disposed between the photosensitive layer 3 and the substrate. between 5.
  • the metal wiring layer 4 is arranged on the backlight side of the photosensitive layer 3, which can reduce the interference of the metal wiring layer 4 on entering the photosensitive layer 3, improve the exposure coefficient, and the light path can be independently optimized, reducing the Angle requirements for incident light.
  • the metal wiring layer 4 may include a silicon oxide layer and components disposed within the silicon oxide layer.
  • the components include but are not limited to clock drivers, time generators, analog-to-digital converters, digital-to-analog converters, etc. Necessary components for the sensor.
  • the metal wiring layer 4 includes a transmission gate 41.
  • the transmission gate 41 is electrically connected to the photoelectric converter 31 and the suspended diffusion area 33. The electrical signal obtained by the photoelectric conversion of the photoelectric converter 31 can be transmitted to the target element through the transmission gate 41. device.
  • the metal wiring layer 4 may also be provided with a connection via 42 that is connected to the second end of the trench isolation part 32 and may be used to export free electrons.
  • the projection of the pixel point on the substrate 5 is an n-gon, where n is an integer greater than or equal to 4.
  • the projection of the pixel point on the substrate 5 may be a quadrilateral, a hexagon, or a polygon of other shapes, which is not limited in the embodiment of the present disclosure.
  • the shape of the isolation ring 21 is consistent with the shape of the pixel point. If the projection of the pixel point on the substrate 5 is an n-gon, then the projection of the isolation ring 21 on the substrate 5 is also an n-gon.
  • the shape of the isolation ring 21 shown in FIG. 3 is a quadrilateral.
  • the shape of the spacer ring 21 shown in other examples may be hexagonal.
  • the image sensor includes pixels of different sizes, some of which include three pixels, that is, three pixels make up one pixel; other pixels include four pixels, that is, four pixels make up one pixel.
  • the size of each pixel point in the pixel may be the same. As shown in FIG. 2 , the size of the projection of each pixel point in the pixel on the substrate 5 is the same.
  • the size of each pixel point in the pixel can also be different, that is, the size of each pixel point in the pixel
  • the size of the projection on the bottom 5 can be different.
  • the material of substrate 5 may include silicide, such as silicon dioxide.
  • FIG. 4 is a schematic structural diagram of an image sensor provided by an embodiment of the present disclosure. As shown in Figure 4, the image sensor includes multiple pixels, each pixel includes multiple pixel points, and the pixels and pixel points are arranged in a preset manner.
  • the size of pixels in the same pixel can be adjusted as needed, that is, the sizes of multiple pixels in a pixel can be the same or different.
  • the image sensor shown in FIG. 4 only shows two pixel points in one pixel, namely the first pixel point 10 and the second pixel point 20 .
  • the size of the projection of the first pixel point 10 on the base 5 is smaller than the size of the projection of the second pixel point 20 on the base 5 .
  • other structures are the same as the image sensor shown in Figure 2 and will not be described again here.
  • RGB image sensor R stands for red, G stands for green, and B stands for blue, and the RGB image sensor indicates that at least some of the pixels in the image sensor are composed of pixels of three colors of RGB
  • the signals form a frame-by-frame image in time sequence.
  • FIG. 5 is a top view of a pixel structure provided by an embodiment of the present disclosure.
  • the pixels include a first pixel point 51, a second pixel point 52, a third pixel point 53, a fourth pixel point 54 and a fifth pixel point 55, wherein the first pixel point 51, the second pixel point 52.
  • the third pixel point 53, the fourth pixel point 54 and the fifth pixel point 55 respectively correspond to red pixel points, green pixel points, blue pixel points, green pixel points and white pixel points.
  • the first pixel point 51, the second pixel point 52, the third pixel point 53, and the fourth pixel point 54 are used to perceive graphics and are responsible for forming color signals; the fifth pixel point 55 is used to perceive brightness and is responsible for Perceive the brightness difference in the outside world.
  • the addition of the fifth pixel point 55 is equivalent to increasing the photosensitive area, thus improving the resolution of the image and making the image more realistic.
  • the photosensitive area corresponding to a pixel that senses brightness may be larger than the photosensitive area corresponding to a pixel that senses graphics.
  • the size of the first pixel point 51, the second pixel point 52, the third pixel point 53, and the fourth pixel point 54 are the same, and the size of the fifth pixel point 55 is larger than the size of the first pixel point 51, the second pixel point 52, The size of any one of the third pixel point 53 and the fourth pixel point 54.
  • the first pixel point 51, the second pixel point 52, the third pixel point 53, and the fourth pixel point 54 are small pixel points, and the fifth pixel point 55 is a large pixel point.
  • the size of the fifth pixel point 55 may be larger than any one of the first pixel point 51, the second pixel point 52, the third pixel point 53, and the fourth pixel point 54, that is, the photosensitive area of the fifth pixel point 55 is larger than The photosensitive area of any one of the first pixel point 51, the second pixel point 52, the third pixel point 53, and the fourth pixel point 54.
  • the size of the fifth pixel point 55 may be the sum of the sizes of the first pixel point 51 , the second pixel point 52 , the third pixel point 53 , and the fourth pixel point 54 , that is, the photosensitivity of the perceived pattern in the pixel.
  • the area is the same as the photosensitive area that perceives brightness (as shown in Figure 5).
  • the pixels include a first pixel point 51 , a second pixel point 52 , a third pixel point 53 , a fourth pixel point 54 and a fifth pixel whose projection shape on the substrate is a rectangle.
  • Point 55, the first pixel point 51, the second pixel point 52, the third pixel point 53 and the fourth pixel point 54 are pixel points for perceiving graphics, and the fifth pixel point 55 is a pixel point for perceiving brightness.
  • Figure 6 is a schematic structural diagram of a pixel provided by an embodiment of the present disclosure.
  • the pixel includes four sides, namely a first side 61, a second side 62, a third side 63 and a fourth side 64.
  • the first side 61 represents the vertical side on the right side of the pixel point
  • the third side 63 represents the vertical side on the left side of the pixel point
  • the second side 62 represents the horizontal side above the pixel point
  • the fourth side Side 64 represents the horizontal side below the pixel.
  • the third side of the first pixel point 51 is adjacent to the first side of the second pixel point 52
  • the fourth side of the second pixel point 52 is adjacent to the first side of the second pixel point 52
  • the second sides of the three pixel points 53 are arranged adjacent to each other
  • the first side of the third pixel point 53 is arranged adjacent to the third side of the fourth pixel point 54
  • the second side of the fourth pixel point 54 is adjacent to the third side of the fourth pixel point 54
  • the fourth side of one pixel point 51 is arranged adjacently
  • the third side of the fifth pixel point 55 is arranged adjacent to the first side of the first pixel point 51 and the first side of the fourth pixel point 54 .
  • isolation rings are respectively provided at the peripheries of the first pixel point 51 , the second pixel point 52 , the third pixel point 53 , the fourth pixel point 54 and the fifth pixel point 55 .
  • the third side of the fifth pixel point 55 is arranged adjacent to the first side of the sixth pixel point 56, and the third side of the sixth pixel point 56 is arranged adjacent to the first side of the first pixel point 51;
  • the fourth side of the sixth pixel point 56 is adjacent to the second side of the seventh pixel point 57, and the third side of the seventh pixel point 57 is adjacent to the first side of the fourth pixel point 54;
  • the first side of the seventh pixel point 57 is adjacent to the third side of the eighth pixel point 58; the second side of the eighth pixel point 58 is adjacent to the fourth side of the fifth pixel point 55.
  • the isolation ring can be made of conductive material.
  • the isolation ring can guide free electrons in functional layers such as the light adjustment layer to improve the reliability of the image sensor.
  • the electronic device 100 includes an image sensor 101 where the image sensor 101 , each pixel in the plurality of pixels includes the same number of pixel points; or, at least some of the pixels in the plurality of pixels include a different number of pixel points.
  • the electronic device 100 includes multiple image sensors 101 (ie, includes at least two image sensors), and various configurations of the multiple image sensors 101 (for example, the number of pixels, the size of the pixels, the size of the pixels, (shape, number, etc.) may be the same or different, and in the case of different configurations, images with different characteristics may be obtained based on the image sensors 101 with different configurations.
  • the electronic device may also include: at least one processor; at least one memory, and one or more I/O interfaces connected between the processor and the memory. time; wherein the memory stores one or more computer programs that can be executed by at least one processor, and the one or more computer programs are executed by at least one processor, so that at least one processor can execute the corresponding image processing method, the The processing object of the image processing method may be an image generated using an image sensor.

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  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

La présente invention concerne un capteur d'image et un dispositif électronique. Le capteur d'image comprend une pluralité de pixels disposés selon un mode d'arrangement prédéfini, dans lequel au moins certains des pixels comprennent au moins un point de pixel, le point de pixel comprend une couche d'entrée de lumière, une couche d'ajustement de lumière, et une couche photosensible qui sont séquentiellement empilées à partir d'un côté de réception de lumière vers un substrat, la couche d'entrée de lumière est utilisée pour recevoir la lumière incidente, la couche d'ajustement de lumière est disposée sur la surface ombrée de la couche d'entrée de lumière et utilisée pour ajuster la lumière incidente, et la couche photosensible est disposée sur la surface ombragée de la couche d'ajustement de lumière ; et des anneaux d'isolation, disposés sur la couche d'ajustement de la lumière, dans lesquels une première extrémité de chaque anneau d'isolation est fixée à la surface ombrée de la couche d'entrée de la lumière, une deuxième extrémité de chaque anneau d'isolation est fixée à la surface de réception de la lumière de la couche photosensible, et l'anneau d'isolation est disposé autour de la périphérie du point de pixel.
PCT/CN2023/098541 2022-06-07 2023-06-06 Capteur d'image et dispositif électronique WO2023236937A1 (fr)

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CN114885106A (zh) * 2022-06-07 2022-08-09 北京灵汐科技有限公司 图像传感器及电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985724A (zh) * 2014-05-29 2014-08-13 北京思比科微电子技术股份有限公司 背照式低串扰图像传感器像素结构及制作方法
CN206947348U (zh) * 2016-05-24 2018-01-30 半导体元件工业有限责任公司 图像传感器
EP3462495A1 (fr) * 2017-09-29 2019-04-03 Thomson Licensing Capteur d'image de capture de lumière amélioré
CN113130517A (zh) * 2020-01-14 2021-07-16 力晶积成电子制造股份有限公司 影像传感器结构及其制造方法
CN114885106A (zh) * 2022-06-07 2022-08-09 北京灵汐科技有限公司 图像传感器及电子设备

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103985724A (zh) * 2014-05-29 2014-08-13 北京思比科微电子技术股份有限公司 背照式低串扰图像传感器像素结构及制作方法
CN206947348U (zh) * 2016-05-24 2018-01-30 半导体元件工业有限责任公司 图像传感器
EP3462495A1 (fr) * 2017-09-29 2019-04-03 Thomson Licensing Capteur d'image de capture de lumière amélioré
CN113130517A (zh) * 2020-01-14 2021-07-16 力晶积成电子制造股份有限公司 影像传感器结构及其制造方法
CN114885106A (zh) * 2022-06-07 2022-08-09 北京灵汐科技有限公司 图像传感器及电子设备

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