WO2023236817A1

WO2023236817A1 - Ray detector and ray detection device

Info

Publication number: WO2023236817A1
Application number: PCT/CN2023/097206
Authority: WO
Inventors: 夏亮; 周军丹; 孙阔
Original assignee: 京东方科技集团股份有限公司; 成都京东方光电科技有限公司
Priority date: 2022-06-08
Filing date: 2023-05-30
Publication date: 2023-12-14
Also published as: CN115000109A

Abstract

The present application discloses a ray detector and a ray detection device. The ray detector comprises a first circuit layer, a first electrode layer, a photoelectric conversion layer, and a second electrode layer; the first circuit layer comprises data lines, gate lines, first switch elements, and constant voltage output units; the first switch elements and photoelectric conversion devices are in one-to-one correspondence; first electrodes of the first switch elements are electrically connected to voltage output ends of the constant voltage output units and output electrodes of the photoelectric conversion devices; second electrodes of the first switch elements are electrically connected to the data lines; control electrodes of the first switch elements are electrically connected to the gate lines; the constant voltage output units are used for inputting preset constant voltages to the output electrodes of the photoelectric conversion devices by means of the voltage output ends before or after the photoelectric conversion devices sense a ray. According to the solution, the detection accuracy of the ray detector can be improved.

Description

Ray detectors and radiation detection equipment

Cross-references to related applications

This disclosure claims priority to the Chinese patent application with application number 202210643199.4 and titled "Ray Detector and Ray Detection Equipment" filed with the China Patent Office on June 8, 2022, the entire content of which is incorporated by reference into this disclosure.

Technical field

This application generally relates to the field of radiation detection technology, and specifically relates to a radiation detector and radiation detection equipment.

Background technique

Compared with computed radiography (CR), digital imaging system (Digital Radiography, DR) does not require film and film machine, and can directly display the captured images on the monitor. Therefore, the digital imaging system has fast imaging speed, Convenient operation and high imaging resolution are significant advantages. The core technology of DR is a ray detector (such as an X-ray detector). How to improve the detection accuracy of the ray detector plays a decisive role in imaging quality.

Contents of the invention

This application aims to provide a radiation detector and radiation detection equipment to improve detection accuracy.

In a first aspect, the application provides a radiation detector, including a stacked first circuit layer, a first electrode layer, a photoelectric conversion layer and a second electrode layer;

The photoelectric conversion layer includes a plurality of photoelectric conversion devices arranged in an array, the output pole of the photoelectric conversion device is electrically connected to the first electrode layer, and the input pole of the photoelectric conversion device is electrically connected to the second electrode layer. connect;

The first circuit layer includes a data line, a gate line, a first switching element and a constant voltage output unit. The first switching element corresponds to the photoelectric conversion device one-to-one, and the first pole of the first switching element The voltage output end of the constant voltage output unit and the output pole of the photoelectric conversion device are electrically connected. The second pole of the first switching element is electrically connected to the data line. The control pole of the first switching element electrically connected to the gate line;

The constant voltage output unit is configured to input a preset constant voltage to the output pole of the photoelectric conversion device through the voltage output end before or after the photoelectric conversion device senses the ray.

In some embodiments of the present application, the constant voltage output unit includes a capacitor, a first pole of the capacitor is the voltage output terminal, and a second pole of the capacitor is used to connect a constant voltage source.

In some embodiments of the present application, a reset unit is further included, the reset end of the reset unit is connected to the data line, and is used to perform the reset of the sensing signal of the photoelectric conversion device after the sensing signal of the photoelectric conversion device is read through the data line. data line to reset.

In some embodiments of the present application, the reset unit includes a second switching element, a first pole of the second switching element is connected to the data line, and a second pole of the second switching element is connected to a reset signal, The control pole of the second switching element is connected to the reset control signal, and the first pole of the second switching element is connected to the reset terminal.

In some embodiments of the present application, a radiation shielding layer is provided between the first circuit layer and the first electrode layer.

In some embodiments of the present application, the first electrode layer includes a first electrode pattern and a first light-transmitting area surrounded by the first electrode pattern, and the photoelectric conversion layer further includes a layer adjacent to the photoelectric conversion device. a second light-transmitting area between them, the second electrode layer including a second electrode pattern and a third light-transmitting area surrounded by the second electrode pattern;

In the orthographic projection of the radiation detector, the first light-transmitting area, the second light-transmitting area and the third light-transmitting area at least partially overlap.

In some embodiments of the present application, the data lines and the gate lines are intersected, and the intersecting data lines and gate lines define multiple regions, each region having a photoelectric conversion device.

In a second aspect, this application provides a radiation detection device, including the above-mentioned radiation detector, a radiation light source and a display unit;

The light-emitting surface of the ray light source faces the light-receiving surface of the ray detector;

The display unit is used to display detection images obtained by each photoelectric conversion device of the radiation detector in response to radiation dose.

In some embodiments of the present application, the display unit includes a display panel, and the display panel is disposed on a side of the radiation detector away from the light-receiving surface.

In some embodiments of the present application, the display unit includes a stacked second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer;

The second circuit layer and the first circuit layer are arranged on the same layer. The first circuit layer includes a first circuit pattern area. The second circuit layer includes a second circuit pattern area. The first circuit pattern area Arranged alternately with the second circuit pattern areas, the first circuit pattern areas correspond to the photoelectric conversion device in a one-to-one correspondence, the second circuit pattern areas correspond to the pixels of the pixel layer in a one-to-one correspondence, and the The number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas.

In some embodiments of the present application, each of the first circuit pattern areas includes the gate line, the data line, the first switching element, the second switching element and a capacitor.

The second circuit layer and the first circuit layer are arranged on the same layer. The first circuit layer includes a first circuit pattern area. The second circuit layer includes a second circuit pattern area. The first circuit pattern area Arranged alternately with the second circuit pattern areas, the first circuit pattern areas correspond to the photoelectric conversion device in a one-to-one correspondence, the second circuit pattern areas correspond to the pixels of the pixel layer in a one-to-one correspondence, and the The number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas;

The first electrode layer and the third electrode layer are arranged in the same layer. The first electrode layer includes a first electrode pattern area. The third electrode layer includes a third electrode pattern area. The first electrode pattern area Arranged alternately with the second electrode pattern areas;

The second electrode layer and the fourth electrode layer have an integrated structure;

A radiation shielding layer is provided on the side of the second circuit layer facing away from the third electrode layer. The radiation shielding layer includes a shielding pattern and a radiation transmission area between the shielding patterns;

In the orthographic projection of the radiation detection device, the second circuit pattern area is directly opposite to the shielding pattern, and the second circuit pattern area is located within the shielding pattern, and the photoelectric conversion device is in contact with the ray Directly opposite the through area.

In some embodiments of the present application, the display panel includes a pixel layer, and the pixel layer includes a plurality of pixels arranged at intervals and radiation-transmitting areas between adjacent pixels;

In the orthographic projection of the radiation detection device, the photoelectric conversion device is located in the radiation transmission area.

The above description is only an overview of the technical solution of the present disclosure. In order to have a clearer understanding of the technical means of the present disclosure, it can be implemented according to the content of the description, and in order to achieve the above and other purposes of the present disclosure. , features and advantages can be more clearly understood, and the specific implementation modes of the present disclosure are specifically listed below.

Description of the drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure or related technologies, a brief introduction will be made below to the drawings that need to be used in the description of the embodiments or related technologies. Obviously, the drawings in the following description are of the present invention. For some disclosed embodiments, those of ordinary skill in the art can also obtain other drawings based on these drawings without exerting creative efforts.

Other features, objects and advantages of the present application will become more apparent by reading the detailed description of the non-limiting embodiments with reference to the following drawings:

Figure 1 is a schematic circuit diagram of a photoelectric conversion device in a radiation detector provided by some embodiments of the present application;

Figure 2 is a schematic circuit diagram of a radiation detector provided by some embodiments of the present application;

Figure 3 is a schematic diagram of the layered structure of a radiation detector provided by some embodiments of the present application;

Figure 4 is a schematic circuit diagram of a photoelectric conversion device in a radiation detector provided by some embodiments of the present application;

Figure 5 is a schematic diagram of the layered structure of a radiation detector provided by some embodiments of the present application;

Figure 6 is a schematic structural diagram of a radiation detection device provided by some embodiments of the present application;

Figure 7 is a schematic structural diagram of a radiation detection device provided by some embodiments of the present application;

Figure 8 is a schematic structural diagram of a radiation detection device provided by some embodiments of the present application;

Figure 9 is a schematic structural diagram of a radiation detection device provided by some embodiments of the present application.

Specific embodiments

The present application will be further described in detail below in conjunction with the accompanying drawings and examples. It can be understood that the specific embodiments described here are only used to explain the relevant invention, but not to limit the invention. It should also be noted that, for convenience of description, only the parts related to the invention are shown in the drawings.

It should be noted that, as long as there is no conflict, the embodiments and features in the embodiments of this application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and embodiments.

X-rays are electromagnetic waves with short wavelength (0.01-10nm) and strong penetrating power. They are widely used in medical imaging, non-destructive testing, materials research and other fields.

Perovskite materials have sensitive electrical voltammetry properties to X-rays, and photoelectric converters prepared from them The device can image the detected object under low-dose X-ray irradiation. Therefore, photoelectric conversion devices prepared from perovskite materials are gradually used in X-ray imaging technology to sense objects passing through. Then the X-ray intensity is used to obtain the detection image. Its working principle is that different materials and substances absorb X-rays differently. For example, in medical imaging, because different tissues of the human body absorb X-rays differently, the X-rays that pass through the human body and reach the X-ray detector The radiation intensity is also different, and the induced potential generated by the X-ray detector is also different. According to the induced potential, a grayscale image of the internal tissue of the human body can be obtained.

However, the inventor of the present application noticed that after the induced potential is read and/or interference between circuits will cause the basic voltage of the output pole of the photoelectric conversion device to change, for example, but not limited to, the output pole of the photoelectric conversion device The theoretical state or design value of the basic voltage is 1V. Due to the reading of the induced potential and/or interference between circuits, the basic voltage of the output pole of the photoelectric conversion device becomes 0.97V. If the photoelectric conversion device receives the potential generated by X-rays is 0.35V, then the voltage read from the output pole of the photoelectric conversion device is 1.32V. Since the basic voltage has changed by 0.03V, it is no longer the theoretical state or design value of 1V. However, the radiation detection equipment will still follow the 1V The basic voltage determines that the induced potential is 0.32V, and imaging is performed at the grayscale corresponding to 0.32V, which causes measurement errors and reduces measurement accuracy. In order to solve this problem, the inventor of this case adopted the following technical solution:

Referring to at least FIGS. 1 to 3 , embodiments of the present application illustrate a ray detector. The ray detector is, for example, but not limited to, an X-ray detector, including a stacked first circuit layer 22 and a first electrode layer. 26. Photoelectric conversion layer 27 and second electrode layer 28;

The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array. These photoelectric conversion devices 1 form a pixel-level arrangement structure. The number, size and spacing of the photoelectric conversion devices 1 can be set according to the requirements of detection accuracy. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the photoelectric conversion device 1 is made of, for example, but not limited to, calcium Titanium material preparation.

The first circuit layer 22 includes a data line DL, a gate line GL, a first switching element T1 and a constant voltage output unit 2. The first switching element T1 corresponds to the photoelectric conversion device 1 one-to-one, and the first switching element T1 corresponds to the photoelectric conversion device 1. The first pole of a switching element T1 is electrically connected to the voltage output terminal of the constant voltage output unit 2 and the output pole of the photoelectric conversion device 1, and the second pole of the first switching element T1 is electrically connected to the data line DL. Electrically connected, the control electrode of the first switching element T1 is electrically connected to the gate line GL;

The data line DL and the gate line GL are arranged to intersect. For example, the gate line GL extends along the first direction x, and the number The data line DL extends along the second direction y, the first direction x may be the row direction, and the second direction y may be the column direction. The intersecting data lines DL and gate lines GL define a plurality of areas, each area having a photoelectric conversion device 1 .

Each switching element in this article can be a transistor. Each transistor can be a thin film transistor, a field effect transistor, or other devices with the same characteristics. It can be an N-type transistor or a P-type transistor. This article uses an N-type thin film transistor as an example. Make an introduction. In order to distinguish the two poles of the transistor except the control pole, one pole is called the first pole and the other pole is called the second pole. The control electrode is a gate electrode, the first electrode can be a drain electrode, and the second electrode can be a source electrode; or the control electrode is a gate electrode, the first electrode can be a source electrode, and the second electrode can be a drain electrode.

The constant voltage output unit 2 is used to input a preset constant voltage to the output pole of the photoelectric conversion device 1 through the voltage output end before the photoelectric conversion device 1 senses rays or after sensing the rays.

During detection, the reading IC 4 can read the output pole of the photoelectric conversion device 1 row by row, that is, the signal of node A (which can be a voltage signal), and record the output pole of the corresponding photoelectric conversion device 1 in the form of coordinates. signal (this signal is used to characterize the grayscale of the detection image) to form the detection image for display.

In the above solution, a constant voltage output unit 2 is provided, and the constant voltage output unit 2 inputs a preset constant voltage to the output pole of the photoelectric conversion device 1 before or after the photoelectric conversion device 1 senses the ray, so as to maintain Before the photoelectric conversion device 1 senses rays or after sensing the rays, the voltage of the output pole of the photoelectric conversion device 1 is constant, overcoming the influence on the basic voltage of the output pole caused by the previous sensing and/or other parts of the circuit. Change, so that after the photoelectric conversion device 1 senses the ray, the voltage increment on the output pole is the induced potential generated by the photoelectric conversion device 1 according to the intensity of the sensed ray, without the influence of other external voltages , Therefore, the detection accuracy of the ray detector is improved.

In some embodiments of the present application, see also Figure 4, the constant voltage output unit 2 includes a capacitor C, the first pole of the capacitor C is the voltage output end, and the second pole of the capacitor is used for Connect the constant voltage source, which can be driver IC5. The constant voltage source is, for example but not limited to, a bias voltage Bisa.

In some embodiments of the present application, a reset unit is also included, the reset end of the reset unit is connected to the data line DL, and is used to read the sensing signal of the photoelectric conversion device 1 through the data line DL. , to reset the data line DL.

In some embodiments of the present application, the reset unit includes a second switching element T2, and the third The first pole of the two switching elements T2 is connected to the data line DL, the second pole of the second switching element T2 is used to receive the reset signal, and the control pole of the second switching element T2 is used to receive the reset control signal. The first pole of the second switching element T2 is the reset terminal. In some embodiments, the second pole of the second switching element T2 is connected to a circuit or circuit element for inputting a reset signal, and the control pole of the second switching element T2 is connected to a circuit or circuit for inputting a reset control signal. element.

In some embodiments of the present application, a radiation shielding layer 24 is provided between the first circuit layer 22 and the first electrode layer 26 to prevent X-rays from impacting the corresponding switching elements. The radiation shielding layer 24 The material is, for example but not limited to, lead oxide.

In some embodiments of the present application, as shown in FIG. 5 , the first electrode layer 26 includes a first electrode pattern and a first light-transmitting area 262 surrounded by the first electrode pattern, and the photoelectric conversion layer 27 also Including a second light-transmitting area 272 between adjacent photoelectric conversion devices 1, the second electrode layer 28 includes a second electrode pattern and a third light-transmitting area 282 surrounded by the second electrode pattern;

In the orthographic projection of the radiation detector, the first light-transmitting area 262, the second light-transmitting area 272, and the third light-transmitting area 282 at least partially overlap.

The radiation detector of the present invention is illustrated below with several specific examples.

Example 1-1

At least as shown in FIGS. 1 to 4 , the ray detector is an X-ray detector, including a stacked substrate 21 , a first circuit layer 22 , a first planarization layer 23 , a ray shielding layer 24 , and a second planarization layer. 25. The first electrode layer 26, the photoelectric conversion layer 27, the second electrode layer 28, the packaging layer 29 and the cover plate 30;

The substrate 21 can be a flexible substrate, such as polyethylene terephthalate (PET) film, polyimide (PI) film, etc.; or it can be a rigid substrate, such as a glass substrate.

The first circuit layer 22 includes a data line DL, a gate line GL, a first switching element T1 and a constant voltage output unit 2. The first switching element T1 corresponds to the photoelectric conversion device 1 one-to-one to control the signal of each photoelectric conversion device 1. output.

The data line DL and the gate line GL are intersected. For example, the gate line GL extends along the first direction x, and the data line DL extends along the second direction y. The first direction x may be the row direction, and the second direction y may be the column direction. The intersecting data lines DL and gate lines GL define a plurality of areas, each area having a photoelectric conversion device 1 .

The first switching element T1 adopts an N-type thin film transistor, and the first electrode of the N-type thin film transistor is a source pole, the second pole is the drain, and the control pole is the gate. The source of the N-type thin film transistor is connected to the first electrode of the following capacitor, the drain is connected to the data line DL, the gate is connected to the gate line GL, and the gate line GL is connected to the gate drive (Gate Driven on Array; GOA) circuit of the array substrate or Gate drive integrated circuit (Integrated Circuit; IC) 3.

The constant voltage output unit 2 includes a capacitor. The first pole of the capacitor is connected to the voltage output end of the constant voltage output unit 2 and the source of the N-type thin film transistor. The second pole of the capacitor is used to connect to a constant voltage source. The constant voltage source is, for example but not limited to, a bias voltage Bisa.

A first planarization layer 23 is formed on the first circuit layer 22 to deposit a radiation shielding layer 24. The material of the radiation shielding layer 24 is, for example, but not limited to, lead oxide. The radiation shielding layer 24 is used to prevent X-rays from entering the first circuit. Layer 22 adversely affects the above-mentioned N-type thin film transistor.

A second planarization layer 25 is formed on the radiation shielding layer 24, and a first electrode layer 26 is formed on the second planarization layer 25. The first electrode layer 26 serves as an anode layer, and the anode layer has a plurality of patterned electric shocks, The source of the N-type thin film transistor and the photoelectric conversion device 1 described below are connected in a one-to-one manner.

The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array to form a pixel-level arrangement structure. The number, size and spacing of the photoelectric conversion devices 1 can be set according to the requirements of detection accuracy. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the second electrode layer 28 serves as a cathode and can be connected to the above-mentioned bias voltage, The photoelectric conversion device 1 is made of, for example but not limited to, perovskite materials.

When the ray detector detects, the gate driver IC3 scans line by line through the gate line GL. After the photoelectric conversion device 1 receives the X-rays, it generates an induced potential, which increases the source voltage of the N-type thin film transistor. When the gate When the voltage V _GB to the source is greater than the threshold voltage V _th , the N-type thin film transistor is turned on, and the reading IC4 reads the potential output by the drain of the N-type thin film transistor through the corresponding data line DL. Each photoelectric conversion device 1 can be positioned according to the gate line GL and the data line DL, and the detection signal corresponding to each photoelectric conversion device 1 can be stored in the form of coordinates.

Each data line DL is also connected to a second switching element T2 serving as a reset unit. Specifically, the first pole of the second switching element T2 is connected to the data line DL, the second pole of the second switching element T2 is used to receive the reset signal, the reset signal can be a voltage signal, and the control pole of the second switching element T2 is used to receive the reset signal. Receive reset control signal. After the detection is completed, a certain amount of charge will remain on the data line DL. The second switching element T2 is turned on through the reset control signal to input the reset signal to the data line DL to eliminate the residual charge on the data line DL to ensure the accuracy of the next inspection. sex. Similar to the above, in some cases In the embodiment, the second pole of the second switching element T2 is connected to a circuit or circuit element for inputting the reset signal, such as the aforementioned data line DL; the control pole of the second switching element T2 is connected for inputting the reset control. Signal circuit or circuit element.

In addition, before or after detection, the capacitor C is used to maintain the basic voltage of the voltage output terminal of the photoelectric conversion device 1, that is, the node B, stable, that is, equal to the preset constant voltage.

The encapsulation layer 29 may be a thin film encapsulation (TFE) layer, and the cover plate 30 may be a glass cover plate or the like.

Example 1-2

As shown at least in FIG. 5 , the ray detector is an X-ray detector, including a stacked substrate 21 , a first circuit layer 22 , a first electrode layer 26 , a photoelectric conversion layer 27 , a second electrode layer 28 , and an encapsulation layer 29 ; The main difference from the above example 1-1 is that the substrate 21 is a clean polyimide (CPI) film; the first circuit layer 22 is a transparent circuit layer, and its circuit principle can be the same as the above example 1-1 ; The first electrode layer 26 includes a first electrode pattern and a first light-transmitting area 262 surrounded by the first electrode pattern; the photoelectric conversion layer 27 also includes a photoelectric conversion device 1, and a second light-transmitting area between adjacent photoelectric conversion devices 1 Area 272; the second electrode layer 28 includes a second electrode pattern and a third light-transmitting area 282 surrounded by the second electrode pattern; in the orthographic projection of the radiation detector 33, the first light-transmitting area 262 and the second light-transmitting area 272 It at least partially overlaps with the third light-transmitting area 282. In this example, the first light-transmitting area 262, the second light-transmitting area 272, and the third light-transmitting area 282 completely overlap, and are filled with a high-transmittance planarizing material. In this example, the substrate 21, the first circuit layer 22 and each light-transmitting area can form a light path. When a display device is subsequently installed, the light path can correspond to the position of the pixel 421 of the display device to transmit the radiation detector. 33 is displayed.

In the second aspect, at least as shown in FIG. 6 , the present application provides a radiation detection device, including the above-mentioned radiation detector 33 , a radiation light source 32 and a display unit 31 ;

The ray light source 32 is used to emit X-rays, for example.

The display unit 31 is, for example, but not limited to, a liquid crystal display (Liquid Crystal Display; LCD) display unit 31, an organic light-emitting diode (Organic Light-Emitting Diode; OLED) display unit 31, or a quantum dot light-emitting diode (Quantum Dot Light Emitting Diodes; QLED). Display unit 31.

The light-emitting surface 36 of the ray light source 32 faces the light-receiving surface 35 of the ray detector 33;

During detection, the object to be detected is located between the light-emitting surface 36 of the ray light source 32 and the light-receiving surface of the ray detector 33. Between the surfaces 35, the rays emitted by the ray source 32 are emitted from the light-emitting surface 36, pass through the object to be detected, and then enter the light-receiving surface 35 of the ray detector 33. Each photoelectric conversion device 1 of the ray detector 33 responds to the intensity of the sensed rays. (i.e., radiation dose), generating induced voltages representing different grayscales to obtain detection images.

The display unit 31 is used to display the detection image obtained by each photoelectric conversion device 1 of the radiation detector 33 in response to the radiation dose.

In some embodiments of the present application, in order to observe the obtained detection image while detecting, the display unit 31 includes a display panel, and the display panel is disposed on the radiation detector 33 away from the light-receiving surface 35 side.

In some embodiments of the present application, as shown in FIG. 7 , in some implementations, in order to improve portability, reduce processing costs, and improve manufacturing efficiency, the radiation detector 33 and the display unit 31 can be integrated together, that is, The radiation detector 33 and the display unit 31 may be arranged on at least part of the same layer.

Specifically: the display unit 31 includes a stacked second circuit layer 52, a third electrode layer 41, a pixel layer 42 and a fourth electrode layer 43;

The second circuit layer 52 and the first circuit layer 22 are arranged in the same layer. That is, the second circuit layer 52 and the first circuit layer 22 are prepared in the same layer using the same manufacturing process and using the same material. The first circuit layer 22 includes a first circuit pattern area 221, and the second circuit layer 52 includes a second circuit pattern area 222. The first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, The first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one-to-one, the second circuit pattern area 222 corresponds to the pixels of the pixel layer 42 one-to-one, and the number of the second circuit pattern area 222 The number is greater than or equal to the first circuit pattern area 221 to ensure that the sensing signal of each photoelectric conversion device 1 is displayed by at least one pixel.

Each first circuit pattern area 221 corresponds to a photoelectric conversion device 1 and is used to control the output of the detection signal of the photoelectric conversion device 1 and the reset of the data line DL. Each first circuit pattern area 221 includes the above-mentioned gate lines GL, data Line DL, first switching element T1, second switching element T2 and capacitor; each second circuit pattern area 222 corresponds to a pixel 421 to control the display of the pixel 421. The second circuit pattern area 222 can be an existing pixel circuit. Any one of them, for example but not limited to 7T1C, 6T1C, 6T2C, 5T1C, 4T1C and other pixel circuits, where T is a thin film transistor and C is a pixel capacitance.

In some embodiments of the present application, as shown in Figure 8, the display unit 31 includes a stacked arrangement The second circuit layer 52, the third electrode layer 41, the pixel layer 42 and the fourth electrode layer 43;

The second circuit layer 52 is arranged on the same layer as the first circuit layer 22, the first circuit layer 22 includes a first circuit pattern area 221, and the second circuit layer 52 includes a second circuit pattern area 222, so The first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged. The first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one-to-one. The second circuit pattern area 222 corresponds to the pixel. The pixels 421 of the layer 42 correspond one to one, and the number of the second circuit pattern areas 222 is greater than or equal to the number of the first circuit pattern areas 221, so that the gray scale corresponding to the voltage induced by each photoelectric conversion device 1 , displayed by at least one pixel 421;

The first electrode layer 26 and the third electrode layer 41 are arranged in the same layer to form an anode layer 261. The first electrode layer 26 includes a first electrode pattern region 2612, and the third electrode layer 41 includes a third electrode layer 2612. Electrode pattern area 2611, the first electrode pattern area 2612 and the second electrode pattern area 2611 are alternately arranged;

The second electrode layer 28 and the fourth electrode layer 43 have an integrated structure, for example, they are electrodes 281 on the same surface;

A radiation shielding layer 24 is provided on the side of the second circuit layer 52 away from the third electrode layer 41. The radiation shielding layer 24 includes a shielding pattern 241 and a radiation-transmitting area between the shielding patterns 241;

In the orthographic projection of the radiation detection device, the second circuit pattern area 222 is directly opposite to the shielding pattern 241, and the second circuit pattern area 222 is located within the shielding pattern 241, and the photoelectric conversion device 1 is directly opposite to the radiation transmission area. By adopting this structure, the rays can be irradiated to the photoelectric conversion device 1 and the rays can be prevented from adversely affecting the thin film transistors provided in the second circuit pattern area 222 .

In some embodiments of the present application, as shown in FIG. 9 , the display panel includes a pixel layer 42 , and the pixel layer 42 includes a plurality of pixels 421 arranged at intervals and radiation-transmitting areas 422 between adjacent pixels 421 ;

In the orthographic projection of the radiation detection device, the photoelectric conversion device 1 is located in the radiation transmission area 422 .

The radiation detection device of the present invention is illustrated below with several specific examples.

Example 2-1

As shown at least in Figure 6, the ray detection equipment includes a ray detector 33, a ray light source 32 and and display unit 31;

The ray light source 32 is used to emit X-rays, for example.

The display unit 31 is, for example, an OLED display unit 31 or QLED (Quantum Dot Light Emitting Diodes).

Among them, the radiation detector 33 includes a stacked substrate 21, a first circuit layer 22, a first planarization layer 23, a radiation shielding layer 24, a second planarization layer 25, a first electrode layer 26, a photoelectric conversion layer 27, a Two electrode layers 28, encapsulation layer 29 and cover plate 30.

The substrate 21 may be a PI film.

The first switching element T1 adopts an N-type thin film transistor. The N-type thin film transistor has a first electrode, a source electrode, a second electrode, a drain electrode, and a control electrode, a gate electrode. The source of the N-type thin film transistor is connected to the first electrode of the following capacitor C, the drain is connected to the data line DL, the gate is connected to the gate line GL, and the gate line GL is connected to the gate drive (Gate Driven on Array; GOA) circuit of the array substrate Or gate drive integrated circuit (Integrated Circuit; IC)3.

The constant voltage output unit 2 includes a capacitor C. The first pole of the capacitor C is the voltage output end of the constant voltage output unit 2 and is connected to the source of the N-type thin film transistor. The second pole of the capacitor C is used to connect to a constant voltage source. The constant voltage source is, for example but not limited to, a bias voltage.

A second planarization layer 25 is formed on the ray shielding layer 24, and a second planarization layer 25 is formed on the second planarization layer 25. The first electrode layer 26 serves as an anode layer. The anode layer has a plurality of patterned contacts to connect the source of the N-type thin film transistor and the photoelectric conversion device 1 described below in a one-to-one manner.

The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 arranged in an array, forming a pixel-level arrangement structure. The output electrode of the photoelectric conversion device 1 is electrically connected to the first electrode layer 26, and the input electrode of the photoelectric conversion device 1 is electrically connected to the second electrode layer 28; the second electrode layer 28 serves as a cathode and can be connected to the above-mentioned bias voltage, The photoelectric conversion device 1 is made of, for example but not limited to, perovskite materials.

Each data line DL is also connected to a second switching element T2 serving as a reset unit. Specifically, the first pole of the second switching element T2 is connected to the data line DL, the second pole of the second switching element T2 is used to receive the reset signal, the reset signal can be a voltage signal, and the control pole of the second switching element T2 is used to receive the reset signal. Receive reset control signal. After the detection is completed, a certain amount of charge will remain on the data line DL. The second switching element T2 is turned on through the reset control signal to input the reset signal to the data line DL to eliminate the residual charge on the data line DL to ensure the accuracy of the next inspection. sex. Similar to the above, in some embodiments, the second pole of the second switching element T2 is connected to a circuit or circuit element for inputting a reset signal, such as the aforementioned data line DL; the control of the second switching element T2 The pole is connected to a circuit or circuit element for inputting a reset control signal.

The encapsulation layer 29 may be a film encapsulation layer, and the cover plate 30 may be a glass cover plate 30 or the like.

Example 2-2

Referring to at least FIG. 7 , the main difference between this example and Example 2-1 is that the radiation detector 33 and the display unit 31 are integrated together, and the second circuit layer 52 of the display unit 31 and the first layer of the radiation detector 33 The circuit layer 22 is arranged on the same layer, that is, the second circuit layer 52 and the first circuit layer 22 are prepared in the same layer using the same preparation process and the same material. The layer structure is called circuit layer 220. The first circuit layer 22 includes a first circuit pattern area 221, and the second circuit layer 52 includes a second circuit pattern area 222. The first circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, The first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one-to-one, the second circuit pattern area 222 corresponds to the pixels 421 of the pixel layer 42 one-to-one, and the second circuit pattern area 222 has a one-to-one correspondence. The number is greater than or equal to the number of the first circuit pattern areas 221 .

Specifically, the integrated structure of the radiation detector 33 and the display unit 31 includes a stacked substrate 21 (herein referred to as the first substrate), a second electrode layer 28, a photoelectric conversion layer 27, a first electrode layer 26, a first Planarization layer 23, radiation shielding layer 24, second substrate 40, circuit layer 220, second planarization layer 25. The third electrode layer 41, the pixel layer 42, the fourth electrode layer 43 and the encapsulation layer 29.

Both the substrate 21 and the second substrate 40 can be PI films.

The photoelectric conversion layer 27 includes a plurality of photoelectric conversion devices 1 prepared from perovskite materials.

The second electrode layer 28 serves as the cathode of the photoelectric conversion device 1 , and the first electrode layer 26 serves as the anode of the photoelectric conversion device 1 .

The circuit layer 220 is a common layer of the second circuit layer 52 and the first circuit layer 22 , and includes a first circuit pattern area 221 and a second circuit pattern area 222 . The circuit principles of the first circuit pattern area 221 and the second circuit pattern area 222 can be referred to the above introduction, and will not be described again here.

The third electrode layer 41 serves as the anode of the pixel layer 42 , and the fourth electrode layer 43 serves as the cathode of the pixel layer 42 .

The encapsulation layer 29 is a thin film encapsulation layer.

Example 2-3

Referring to at least FIG. 8 , the main difference between this example and Example 2-1 is that the radiation detector 33 and the display unit 31 are integrated together, wherein the second circuit layer 52 of the display unit 31 and the third circuit layer of the radiation detector 33 A circuit layer 22 is arranged on the same layer. The same layer structure of the second circuit layer 52 and the first circuit layer 22 is called a circuit layer 220. The first electrode layer 26 of the radiation detector 33 and the third electrode layer 41 of the display unit 31 The pixel layer 42 of the display unit 31 and the photoelectric conversion layer 27 of the radiation detector 33 are arranged on the same layer, and the second electrode layer 28 of the radiation detector 33 and the fourth electrode layer 43 of the display unit 31 are arranged on the same layer.

Specifically, the integrated structure of the radiation detector 33 and the display unit 31 includes a stacked substrate 21 (herein referred to as the first substrate), a radiation shielding layer 24, a first planarization layer 23, a second substrate 40, and a circuit layer. 220. The second planarization layer 25, the anode layer 261, the device layer, the cathode layer 281 and the packaging layer 29.

The radiation shielding layer 24 includes shielding patterns 241 and radiation transmission areas between the shielding patterns 241 .

The circuit layer 220 is a common layer of the second circuit layer 52 and the first circuit layer 22 and includes a first circuit pattern area 221 of the first circuit layer 22 and a second circuit pattern area 222 of the second circuit layer 52. A circuit pattern area 221 and the second circuit pattern area 222 are alternately arranged, the first circuit pattern area 221 corresponds to the photoelectric conversion device 1 one-to-one, and the second circuit pattern area 222 corresponds to the pixel layer 42 The pixels 421 correspond one to one, and the number of the second circuit pattern areas 222 is greater than or equal to The number of the first circuit pattern areas 221 is such that the gray scale corresponding to the voltage induced by each photoelectric conversion device 1 is displayed by at least one pixel 421;

The anode layer 261 is a common layer of the first electrode layer 26 and the third electrode layer 41, and includes a first electrode pattern area 2612 of the first electrode layer 26 and a third electrode pattern area 2611 of the third electrode layer 41. The first The electrode pattern areas 2612 and the second electrode pattern areas 2611 are arranged alternately;

The device layer 50 is a common layer of the pixel layer 42 and the photoelectric conversion layer 27, and includes the pixels 421 of the pixel layer 42 and the photoelectric conversion device 1 of the photoelectric conversion layer 27.

The cathode layer 281 is a common layer of the above-mentioned second electrode layer 28 and the fourth electrode layer 43, and is a one-sided electrode;

In the orthographic projection of the radiation detection device, the second circuit pattern area 222 is directly opposite to the shielding pattern 241, and the second circuit pattern area 222 is located within the shielding pattern 241, and the photoelectric conversion device 1 is directly opposite to the radiation transmission area.

Example 2-4

Referring to at least FIG. 9 , in this example the radiation detector 33 is disposed on the packaging layer 29 of the display unit 31 .

Specifically, it includes a stacked second substrate 40, a second circuit layer 44, a third electrode layer 41, a pixel layer 42, a fourth electrode layer 43, an encapsulation layer 29, and a substrate 21 (herein referred to as the first substrate) , the first circuit layer 22, the first electrode layer 26, the photoelectric conversion layer 27, and the second electrode layer 28.

The pixel layer 42 includes a plurality of pixels 421 arranged at intervals and radiation transmission areas 422 between adjacent pixels 421;

The photoelectric conversion layer 27 includes photoelectric conversion devices 1 arranged at intervals;

In the orthographic projection of the radiation detection device, the photoelectric conversion device 1 is located in the radiation transmission area 422.

It should be understood that if the terms "center", "vertical", "horizontal", "upper", "lower", "front", "back", "left", "right" and "vertical" are involved in the above ", "horizontal", "top", "bottom", "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the technical solutions of the present application and The simplified description does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the technical solution of the present application. In addition, the terms “first” and “second” are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the quantity of indicated technical features. Therefore, the characteristics defined as "first" and "second" may explicitly or implicitly include a or more of this feature. In the description of the present invention, unless otherwise stated, the meaning of "plurality" is two or more.

The above description is only an illustration of the embodiments of the present application and the applied technical principles. Persons skilled in the art should understand that the scope of the invention involved in this application is not limited to technical solutions formed by a specific combination of the above technical features, but should also cover any combination of the above technical features or other technical solutions without departing from the concept of the invention. Other technical solutions formed by any combination of equivalent features. For example, a technical solution is formed by replacing the above features with technical features with similar functions disclosed in this application (but not limited to).

Claims

A radiation detector, characterized in that it includes a stacked first circuit layer, a first electrode layer, a photoelectric conversion layer and a second electrode layer;

The photoelectric conversion layer includes a plurality of photoelectric conversion devices arranged in an array, the output pole of the photoelectric conversion device is electrically connected to the first electrode layer, and the input pole of the photoelectric conversion device is electrically connected to the second electrode layer. connect;

The first circuit layer includes a data line, a gate line, a first switching element and a constant voltage output unit. The first switching element corresponds to the photoelectric conversion device one-to-one, and the first pole of the first switching element The voltage output end of the constant voltage output unit and the output pole of the photoelectric conversion device are electrically connected. The second pole of the first switching element is electrically connected to the data line. The control pole of the first switching element electrically connected to the gate line;

The constant voltage output unit is configured to input a preset constant voltage to the output pole of the photoelectric conversion device through the voltage output end before or after the photoelectric conversion device senses the ray.
The radiation detector according to claim 1, wherein the constant voltage output unit includes a capacitor, a first pole of the capacitor is the voltage output terminal, and a second pole of the capacitor is used to connect a constant voltage source.
The radiation detector according to claim 1 or 2, wherein the radiation detector further includes a reset unit, the reset end of the reset unit is connected to the data line, and is used for sensing of the photoelectric conversion device. After the signal is read through the data line, the data line is reset.
The radiation detector according to claim 3, wherein the reset unit includes a second switching element, a first pole of the second switching element is connected to the data line, and a second pole of the second switching element The control pole of the second switching element is used for receiving the reset signal. The first pole of the second switching element is the reset terminal.
The radiation detector according to claim 1 or 2, wherein a radiation shielding layer is provided between the first circuit layer and the first electrode layer.
The radiation detector according to claim 1 or 2, wherein the first electrode layer includes a first electrode pattern and a first light-transmitting area surrounded by the first electrode pattern, and the photoelectric conversion The layer further includes a second light-transmitting area between adjacent photoelectric conversion devices, the second electrode layer includes a second electrode pattern and a third light-transmitting area surrounded by the second electrode pattern;

In the orthographic projection of the radiation detector, the first light-transmitting area, the second light-transmitting area and the third light-transmitting area at least partially overlap.
The radiation detector according to claim 1, wherein the data lines and the grid lines are intersected, and the intersecting data lines and the grid lines define a plurality of areas, each area having a photoelectric conversion device.
A radiation detection device, characterized in that it includes the radiation detector according to any one of claims 1 to 7, and further includes a radiation light source and a display unit;

The light-emitting surface of the ray light source faces the light-receiving surface of the ray detector;

The display unit is used to display detection images obtained by each photoelectric conversion device of the radiation detector in response to radiation dose.
The radiation detection device according to claim 8, wherein the display unit includes a display panel, and the display panel is disposed on a side of the radiation detector away from the light-receiving surface.
The radiation detection device according to claim 9, wherein the display unit includes a stacked second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer;

The second circuit layer and the first circuit layer are arranged on the same layer. The first circuit layer includes a first circuit pattern area. The second circuit layer includes a second circuit pattern area. The first circuit pattern area Arranged alternately with the second circuit pattern areas, the first circuit pattern areas correspond to the photoelectric conversion device in a one-to-one correspondence, the second circuit pattern areas correspond to the pixels of the pixel layer in a one-to-one correspondence, and the The number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas.
The radiation detection device according to claim 10, wherein each of the first circuit pattern areas includes the gate line, the data line, the first switching element, the second switching element and a capacitor.
The radiation detection device according to claim 8, wherein the display unit includes a stacked second circuit layer, a third electrode layer, a pixel layer and a fourth electrode layer;

The second circuit layer is arranged on the same layer as the first circuit layer, and the first circuit layer includes a a circuit pattern area, the second circuit layer includes a second circuit pattern area, the first circuit pattern area and the second circuit pattern area are alternately arranged, the first circuit pattern area and the photoelectric conversion device are There is a one-to-one correspondence between the second circuit pattern areas and the pixels of the pixel layer, and the number of the second circuit pattern areas is greater than or equal to the number of the first circuit pattern areas;

The first electrode layer and the third electrode layer are arranged in the same layer. The first electrode layer includes a first electrode pattern area. The third electrode layer includes a third electrode pattern area. The first electrode pattern area Arranged alternately with the second electrode pattern areas;

The second electrode layer and the fourth electrode layer have an integrated structure;

A radiation shielding layer is provided on the side of the second circuit layer facing away from the third electrode layer. The radiation shielding layer includes a shielding pattern and a radiation transmission area between the shielding patterns;

In the orthographic projection of the radiation detection device, the second circuit pattern area is directly opposite to the shielding pattern, and the second circuit pattern area is located within the shielding pattern, and the photoelectric conversion device is in contact with the ray Directly opposite the through area.
The radiation detection device according to claim 9, wherein the display panel includes a pixel layer, the pixel layer includes a plurality of pixels arranged at intervals and radiation transmission areas between adjacent pixels;

In the orthographic projection of the radiation detection device, the photoelectric conversion device is located in the radiation transmission area.