WO2023231805A1 - 半导体热处理设备及其控制方法 - Google Patents

半导体热处理设备及其控制方法 Download PDF

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Publication number
WO2023231805A1
WO2023231805A1 PCT/CN2023/095228 CN2023095228W WO2023231805A1 WO 2023231805 A1 WO2023231805 A1 WO 2023231805A1 CN 2023095228 W CN2023095228 W CN 2023095228W WO 2023231805 A1 WO2023231805 A1 WO 2023231805A1
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WIPO (PCT)
Prior art keywords
gas
air inlet
air
section
gas storage
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PCT/CN2023/095228
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English (en)
French (fr)
Inventor
周厉颖
杨帅
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北京北方华创微电子装备有限公司
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Publication of WO2023231805A1 publication Critical patent/WO2023231805A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

  • the present invention relates to the technical field of semiconductor manufacturing, and in particular to a semiconductor heat treatment equipment and a control method thereof.
  • process gases can be used to form structures such as insulating layers or dielectric layers on the surface of semiconductors such as wafers.
  • multiple wafers are usually arranged in a specific direction, such as the height direction, and accommodated in a process chamber.
  • the process gas provided by the gas source is supplied into the process chamber using an air inlet pipeline, so that the process gas is deposited on the multiple wafers. s surface.
  • the pressure of the process gas is relatively small during the process of introducing the process gas, and since the process chamber is equipped with an exhaust pipeline, after the process gas is introduced into the process chamber, the process chamber The concentration of the process gas at a location relatively far away from the gas inlet pipeline is relatively small, causing the process results of the wafers located in this area to not meet the requirements.
  • the invention discloses a semiconductor heat treatment equipment and a control method thereof to solve the problem that in the current process, the concentration of process gas in a position relatively far away from the gas inlet pipeline in the process chamber is relatively small, resulting in wafers located in this area. The process results do not meet the requirements.
  • the present invention adopts the following technical solutions:
  • the present invention discloses a semiconductor heat treatment equipment, which includes a process chamber, an air inlet pipeline, an air supply pipeline and an exhaust pipeline.
  • One end of the air inlet pipeline is connected to a gas source, and the other end of the air inlet pipeline is connected to a gas source.
  • One end is connected to the air supply pipeline located in the process chamber, and the air supply pipeline is parallel to the central axis of the process chamber.
  • the air supply pipeline is provided with a plurality of air supply holes, and each air supply hole Used equally To transport process gas into the process chamber; the exhaust pipeline is connected to the process chamber, and a gas storage component is provided on the air inlet pipeline.
  • the gas storage component is used to store gas when the gas storage amount reaches the first preset value.
  • the present invention discloses a control method for semiconductor thermal treatment equipment, which includes:
  • process gas is provided to the process chamber.
  • Embodiments of the present application disclose a semiconductor heat treatment equipment, in which one end of the air inlet pipeline is connected to the gas source, and the other end is connected to the gas supply pipeline located in the process chamber.
  • the gas supply pipeline is parallel to the central axis of the process chamber, and the gas supply pipeline is parallel to the central axis of the process chamber.
  • the gas supply pipeline is provided with multiple gas supply holes, and each gas supply hole is used to transport process gas to the process chamber.
  • the process chamber is also connected to the exhaust pipeline to ensure a smooth air path.
  • the exhaust pipeline can also be used to stabilize the working pressure in the process chamber.
  • a gas storage component is provided on the air inlet pipeline.
  • the gas storage component sequentially supplies the process gas to the process chamber through the air inlet pipeline and the gas supply pipeline, so that the process gas in the gas storage part is immediately Under the action of its own pressure, it can diffuse into the gas supply pipeline relatively quickly through the air inlet pipeline.
  • the process gas in the gas storage part has a certain pressure, after the process gas is output from the gas storage part, the process gas can be relatively Reliably move to the gas supply holes in the gas supply pipeline that are far away from the gas storage parts to ensure that the multiple gas supply holes in the gas supply pipeline can output relatively uniform process gas, ensuring that the process results of any wafer meet the process requirements. .
  • Figure 1 is a schematic structural diagram of the semiconductor heat treatment equipment disclosed in the embodiment of the present application.
  • Figure 2 is a schematic structural diagram of a gas supply pipeline in the semiconductor heat treatment equipment disclosed in the embodiment of the present application;
  • FIG. 3 is another structural schematic diagram of the air supply pipeline in the semiconductor heat treatment equipment disclosed in the embodiment of the present application.
  • Figure 4 is a schematic structural diagram of a gas storage component in the semiconductor heat treatment equipment disclosed in the embodiment of the present application.
  • Figure 5 is another structural schematic diagram of the gas storage component in the semiconductor heat treatment equipment disclosed in the embodiment of the present application.
  • FIG. 6 is a flow chart of a control method of semiconductor heat treatment equipment disclosed in an embodiment of the present application.
  • inventions of the present invention disclose a semiconductor heat treatment equipment.
  • the semiconductor heat treatment equipment can cause the wafer 900 to interact with the process gas, thereby causing the process gas to be deposited on the surface of the wafer 900 .
  • the semiconductor heat treatment equipment specifically includes an air inlet pipeline, an exhaust pipeline 130, a gas supply pipeline 140, a process chamber 210 and a gas storage component.
  • a gas storage component is provided on the air intake pipeline.
  • the air intake pipeline is divided into an intake section 110 and a connecting section 120; the gas storage component has a gas storage stage and a gas release stage.
  • the gas storage assembly may include a gas storage component 310 , a first valve 410 and a second valve 420 .
  • the process chamber 210 can provide a process environment and accommodation space for the processing of the wafer 900 , and allow process gas to be supplied into the process chamber 210 to interact with the wafer 900 .
  • multiple wafers 900 and other semiconductors can be accommodated in the process chamber 210 , and the multiple wafers 900 can be arranged regularly.
  • the plurality of wafers 900 may be distributed along the height direction of the process chamber 210 .
  • a carrying mechanism may be provided in the process chamber 210 to use the carrying mechanism to carry the plurality of wafers 900 .
  • the carrying mechanism may be a wafer boat.
  • the process gas can be provided by a gas source.
  • the gas source can be a gas storage device.
  • the gas source can be a gas supply pipeline to prevent the process gas from being at a relatively high pressure for a long time. status and pose safety risks.
  • one end of the air inlet section 110 of the air inlet pipeline can be connected to the gas source, and the other end of the air inlet section 110 can be connected to the gas storage member 310, so that the process gas can pass through the air inlet section. 110 is transported into the gas storage member 310.
  • the air inlet section 110 can be made of metal materials such as stainless steel, which can also prevent the process gas from reacting with the air inlet section 110 and adversely affect the process. produce adverse effects.
  • Both the air source and the air storage member 310 can be connected to the air inlet section 110 through connecting devices such as connecting joints and sealing gaskets, and ensure that the air inlet section 110 and the air source, as well as the air inlet section 110 and A relatively reliable sealing connection relationship is formed between the gas storage parts 310 .
  • connecting devices such as connecting joints and sealing gaskets
  • parameters such as the length and flow rate of the air inlet section 110 can be determined according to actual needs and are not limited here.
  • the first valve 410 is disposed on the air inlet section 110 of the air inlet pipe, that is, the first valve 410 is disposed on the part of the air inlet pipe upstream of the air storage member 310, so as to use the first valve 410 to control the air inlet.
  • the first valve 410 When the first valve 410 is in a closed state, the air inlet section 110 and the gas storage member 310 are disconnected, and the process gas output from the gas source cannot be transported from the air inlet section 110 to the gas storage member 310; correspondingly, in When the first valve 410 is in an open state, the air inlet section 110 and the gas storage member 310 are connected with each other, and the process gas output from the gas source can be transported into the gas storage member 310 through the air inlet section 110 .
  • the first valve 410 may be a solenoid valve or a pneumatic valve, or the like.
  • the process chamber 210 can provide a process environment for the wafer 900 . Based on this, in order to ensure that the process gas can be transported into the process chamber 210 and the process gas can be transported to the multiple wafers 900 relatively uniformly.
  • a gas supply pipeline 140 is provided in the process chamber 210 so as to use the gas supply pipeline 140 to transport the process gas to different areas of the process chamber 210 .
  • the gas supply pipeline 140 can be made parallel to the central axis of the process chamber 210.
  • the central axis of the process chamber is the height direction of the process chamber 210 and is also the arrangement direction of the wafers 900 in the process chamber 210 .
  • the gas supply pipeline 140 may be provided with a plurality of gas supply holes 141 , and each gas supply hole 141 is used to transport process gas into the process chamber 210 .
  • the plurality of gas supply holes 141 are accommodated in the process chamber 210 along the The arrangement direction of the plurality of wafers 900 is distributed, so that the air supply area formed by the plurality of air supply holes 141 can correspond to the area where the semiconductors such as the plurality of wafers 900 are located, so that the air supply pipeline 140 can cover as many wafers as possible.
  • the area where the wafer 900 is located allows process gases to act on either wafer 900 superior.
  • the gas storage component 310 is connected to one end of the gas supply pipeline 140 through the connecting section 120 of the gas inlet pipeline, thereby ensuring that the process gas in the gas storage component 310 can be transported to the process through the connecting section 120 and the gas supply pipeline 140 . within chamber 210.
  • the communication section 120 can also be made of metal or other materials, and a sealed connection relationship is formed between the gas storage component 310 and the air supply pipeline 140 and the communication section 120 .
  • the second valve 420 is disposed on the communication section 120 , that is, the second valve 420 is disposed In the portion of the air inlet pipeline located downstream of the gas storage component 310, the opening and closing of the second valve 420 is used to control the on-off relationship between the gas storage component 310 and the process chamber 210.
  • the second valve 420 when the second valve 420 is in the open state, the process gas in the gas storage member 310 can be transported to the process chamber 210 through the communication section 120.
  • the second valve 420 is in the closed state, The process gas in the gas storage part 310 cannot be transported to the process chamber 210 .
  • the second valve 420 may be a solenoid valve or a pneumatic valve.
  • the process chamber 210 is also connected to the exhaust pipeline 130 One end of the exhaust pipeline 130 is connected, and the other end of the exhaust pipeline 130 is configured to be connected with the exhaust gas treatment equipment 600.
  • the exhaust pipe 130 can be suctioned through the exhaust gas treatment equipment 600.
  • the gas in the process chamber 210 reduces the pressure in the process chamber 210 to a preset pressure range, thereby improving the process effect.
  • the waste gas in the process chamber 210 can also be extracted under the action of the waste gas treatment equipment 600 .
  • a second pressure regulating valve 450 can be provided on the exhaust pipeline 130, and through the second pressure regulating valve The pressure valve 450 provides a connection between the exhaust gas treatment equipment 600 and the process chamber 210 .
  • the exhaust gas can also be A second pressure detection component 520 is provided on the pipeline 130 , and the second pressure detection component 520 is located between the process chamber 210 and the second pressure regulating valve 450 , so as to use the second pressure detection component 520 to determine the pressure in the process chamber 210 .
  • multiple wafers 900 can be placed in the process chamber 210 first, and the exhaust pipe 130 and the exhaust gas treatment equipment 600 can be used to treat the wafers in the process chamber 210.
  • the process environment is processed so that the process environment in the process chamber 210 meets the process requirements.
  • the first valve 410 can be opened and the second valve 420 can be closed, so that the process gas supplied from the gas source can be transported to the gas storage member 310 for storage through the gas inlet section 110 .
  • the pressure of the process gas in the gas storage part 310 also increases.
  • the amount of process gas required for multiple wafers 900 to perform corresponding processes can be obtained, and then, in the gas storage part 310
  • the first valve 410 is closed and the second valve 420 is opened, so that the process gas stored in the gas storage part 310 can be discharged relatively quickly under its own pressure.
  • the ground is transported to the air supply pipeline 140 through the connecting section 120, and is sent into the process chamber 210 from the plurality of air supply holes 141 on the air supply pipeline 140.
  • the gas storage component 310 is controlled through the second valve 420 to stop supplying air to the process chamber.
  • a flow meter or other device can be used to measure the amount of process gas delivered to the gas storage part 310 by the air inlet section 110 within a preset time period; or, the amount of process gas delivered to the gas storage part 310 can also be measured according to the type of process gas and the gas storage part.
  • the volume and other parameters of the gas storage part 310 can be used to obtain the pressure and other parameters of the process gas in the gas storage part 310 when the amount of process gas that meets the demand is stored in the gas storage part 310.
  • the pressure detection part can be used to detect the process gas in the gas storage part 310. The pressure is detected to indirectly obtain the amount of process gas stored in the gas storage part 310 .
  • the embodiment of the present application discloses a semiconductor heat treatment equipment, in which one end of the air inlet pipeline is connected to the air source, and the other end is connected to the air supply pipeline located in the process chamber.
  • the air source passes through the air inlet section 110 of the air inlet pipeline. It is connected with the gas storage part 310.
  • the gas storage part 310 is connected with the gas supply pipeline 140 located in the process chamber 210 through the connecting section 120 of the gas inlet pipeline.
  • the gas supply pipeline 140 is parallel to the central axis of the process chamber 210.
  • the gas supply pipe The path is provided with a plurality of air supply holes 141, and each air supply hole 141 is used to transport process gas to the process chamber 210.
  • the process chamber 210 is also connected to the exhaust pipeline 130 to ensure a smooth gas path.
  • the exhaust pipeline 130 can also be used to stabilize the working pressure in the process chamber 210 .
  • the gas storage component 310 sequentially provides process gas to the process chamber 210 via the gas inlet pipeline and the gas supply pipeline 140 .
  • Gas, and thus the process gas in the gas storage part 310 can diffuse relatively quickly into the gas supply pipeline 140 through the connecting section 120 under the action of its own pressure.
  • the process gas in the gas storage part 310 has a certain pressure, After the process gas is output from the gas storage part 310, the process gas can move to the gas supply hole 141 far away from the gas storage part 310 in the gas supply pipeline 140 relatively reliably, ensuring the multiple gas supply holes 141 of the gas supply pipeline 140 It can output relatively uniform process gas to ensure that the process results of any wafer 900 meet the process requirements.
  • the amount of process gas stored in the gas storage part 310 can be obtained by measuring the flow rate or pressure.
  • the semiconductor heat treatment equipment further includes a first pressure detection part 510.
  • 510 is disposed on the air intake pipe, and is located between the first valve 410 and the air storage member 310, that is, it is disposed on the air intake section 110 of the air intake pipe.
  • the first pressure detection component 510 is used to detect the gas in the gas storage component 310 .
  • the first pressure detection component 510 may specifically be a pressure gauge or a pressure sensor. When parameters such as the volume of the gas storage component 310 and the type of process gas are known, The amount of process gas stored in the gas storage component 310 can be indirectly obtained based on the measurement value of the first pressure detection component 510 .
  • the semiconductor thermal treatment equipment also includes a mass flow controller 530.
  • the mass flow controller 530 is installed on the air inlet section 110. Under the action of the mass flow controller 530, more accurate acquisition of The amount of process gas delivered to the gas storage part 310 through the air inlet section 110 within the preset time period improves the accuracy of the measurement value of the amount of process gas in the gas storage part 310 .
  • the semiconductor heat treatment equipment may be provided with a first pressure detection part 510 and a mass flow controller 530 to measure the amount of process gas in the gas storage part 310 through multiple dimensions. Obtain the amount of process gas stored in the gas storage part 310 to maximize the accuracy of the measurement value.
  • the semiconductor heat treatment equipment also includes a third valve 430.
  • the third valve 430 is installed between the first valve 410 and the mass flow controller 530, and does not need to deliver the process gas. , the third valve 430 can be kept in a closed state to improve the safety of process gas transportation.
  • the semiconductor heat treatment equipment may also include a first pressure regulating valve 440.
  • the first pressure regulating valve 440 is installed on the air inlet section 110, and the first pressure regulating valve 440 is located between the mass flow controller 530 and the air source to control the
  • the transport pressure of the process gas in the air inlet section 110 is adjusted through the first pressure regulating valve 440 to improve the transport stability of the process gas.
  • the structure and/or arrangement of the air supply holes 141 on the gas supply pipeline 140 can be designed to ensure that the gas supply is delivered to the wafers 900 in the process chamber 210 .
  • the amount of process gas for any wafer 900 is basically the same.
  • multiple air supply holes 141 are distributed along the central axis of the process chamber 210 and along the air supply direction of the air supply pipeline 140 (as shown by arrows in FIG. 2 ), so that multiple air supply holes 141 can be provided.
  • the air supply cross-sectional area of the air holes 141 gradually increases, that is, the air supply cross-sectional area of any air supply hole 141 is different.
  • the air supply cross-sectional area of the air supply hole 141 that is further away from the communication section 120 is larger.
  • the air supply cross-sectional area of the air supply hole 141 is the area of the cross-section perpendicular to its own axis in the air supply hole 141, which can represent the air supply capacity of the air supply hole 141.
  • this can compensate for the process gas pressure at different gas supply holes 141 away from the gas storage part 310.
  • the pressure at the air supply hole 141 of the air component 310 has a relatively small negative impact on the air output of the air supply hole 141, so as to ensure that the air output of each of the multiple air supply holes 141 is basically the same.
  • the distance between any two adjacent air supply holes 141 can be made equal.
  • a plurality of air supply holes 141 are distributed along the central axis of the process chamber 210 and along the air supply direction of the air supply pipeline 140 (as shown by the arrows in Figure 3) , the distance between any two adjacent air supply holes 141 among the plurality of air supply holes 141 gradually decreases. That is to say, in the process of arranging the air supply holes 141 on the air supply pipeline 140 , the air supply holes 141 are more densely located farther away from the communication section 120 , and the density of the air supply holes 141 is increased to compensate for the air supply holes 141 in this area.
  • the distance between the gas storage member 310 and the gas storage member 310 is relatively large, and the air pressure at the air supply hole 141 has a relatively small negative impact, thereby ensuring that the amount of process gas delivered to any one of the plurality of wafers 900 is basically the same.
  • the radius of any air supply hole 141 can be made the same to reduce the processing difficulty of the air supply hole 141 .
  • multiple air supply holes 141 are distributed along the central axis of the process chamber 210, and along the air supply direction of the air supply pipeline 140, the air supply cross-sectional area of the multiple air supply holes 141 can be gradually increased.
  • the distance between any two adjacent air supply holes 141 among the plurality of air supply holes 141 can also be gradually smaller to maximize the uniformity of the air supply amount of the multiple air supply holes 141 .
  • the specific parameters of the air supply cross-sectional area of the air supply holes 141 and the spacing between the air supply holes 141 can be adaptively adjusted to ensure that the air supply amounts of the multiple air supply holes 141 are basically consistent.
  • the gas storage member 310 may store process gas such that the process gas is stored in the gas storage member 310
  • the chamber is pressurized to increase the diffusion capacity and diffusion speed of the process gas, thereby improving the uniformity of the process gas in different areas within the process chamber 210 .
  • the gas storage member 310 includes gas along its inlet direction (i.e., as shown in FIGS. 4 and 5 ).
  • the first buffer section 311, the straight section 312 and the second buffer section 313 are sequentially connected in series (showing the direction from left to right), and the three together form the air storage member 310.
  • one end of the air inlet section 110 is used to communicate with the air source, the other end of the air inlet section 110 is connected to the end of the first buffer section 311 away from the straight section 312, and the second buffer section 313 One end away from the straight section 312 is connected to one end of the straight section 312 , and the other end of the connecting section 120 is connected to the air supply pipeline 140 .
  • the first buffer section 311 , the second buffer section 313 and the straight section 312 can be formed of materials with relatively high structural strength such as metal to improve the gas storage performance of the gas storage component 310 .
  • the first buffer section 311, the second buffer section 313 and the straight section 312 can be fixedly connected by welding or other methods.
  • the first buffer section 311, the flat section 312 can be fixedly connected.
  • the straight section 312 and the second buffer section 313 can be formed in an integral manner.
  • the cross-sectional area of the first buffer section 311 perpendicular to the air inlet direction ie, the direction from left to right as shown in Figures 4 and 5
  • the second buffer section 311 gradually increases.
  • the cross-sectional area of the buffer section 313 perpendicular to the air inlet direction ie, the direction from left to right as shown in FIGS. 4 and 5
  • both the first buffer section 311 and the second buffer section 313 have a relatively flat structure, it is possible to prevent the process gas from being obstructed when flowing in the gas storage part 310 and improve the flow capacity of the process gas.
  • the projection of the straight section 312 along the air inlet direction can be made equal to that of the straight section.
  • the cross-sectional shapes of 312 perpendicular to the gas inlet direction are the same, that is, the straight section 312 is a linear structural member as a whole, which can prevent the process gas from being obstructed by the straight section 312 when flowing in the gas storage part 310, ensuring that the process gas smooth flow.
  • the straight section 312 can be a cylindrical structural member.
  • the end surfaces of the first buffer section 311 and the second buffer section 313 connected to the straight section 312 are also circular structures, which can further improve The flow performance of the process gas in the gas storage part 310 prevents the process gas from being deposited at the corners of the gas storage part 310, thereby improving the utilization rate of the process gas.
  • the first buffer section 311 and the air inlet section 110, and the second buffer section 313 and the communication section 120 can be connected using connecting joints and sealing gaskets. Provide good sealing between components.
  • a radial sealing joint 320 i.e., a VCR joint
  • VCR joint can be connected between the gas storage component 310 and the air inlet section 110, and/or between the gas storage component 310 and the communication section 120 through a vacuum.
  • the vacuum connection radial sealing joint 320 can ensure relatively higher sealing performance between the gas storage part 310 and the air inlet section 110, and between the gas storage part 310 and the connecting section 120, further preventing the process Gas leakage and improved process safety.
  • the two interconnected components between the communication section 120 and the air supply pipeline 140, and between the process chamber 210 and the exhaust pipeline 130 can be connected to each other through the vacuum connection radial sealing joint 320 to ensure that the semiconductor The connection reliability and sealing between any two connected components in heat treatment equipment are relatively high.
  • the joint connector 330 can be used to assist in connecting the gas storage part 310 and the vacuum connection radial sealing joint 320. Specifically, after the vacuum connection radial sealing joint 320 is penetrated into the joint connection part 330, the gas storage part 310 The end is welded and connected to the joint connector 330, so that the vacuum connection radial sealing joint 320 and the gas storage member 310 can be integrated into one body.
  • the semiconductor thermal processing equipment may include a carrying mechanism, so that the plurality of wafers 900 may be carried on the carrying mechanism.
  • the semiconductor thermal treatment equipment disclosed in the embodiments of the present application may also include a spindle.
  • the rotating mechanism 220 may be a rotating motor or the like.
  • the rotating mechanism 220 is installed in the process chamber 210, and the carrying mechanism is arranged in the process chamber 210 and installed on the rotating mechanism 220, so that the rotating mechanism 220 can drive the carrying mechanism to rotate, and the direction of rotation is specifically around multiple wafers.
  • the direction of the arrangement direction of 900 may be a rotating motor or the like.
  • the plurality of wafers 900 can be arranged along the height direction of the process chamber 210, and then the rotation mechanism 220 can drive the carrying mechanism to rotate in the direction around the height direction of the process chamber 210, that is, the carrying mechanism can be rotated in the horizontal plane. Internal rotation. Under the action of the rotating mechanism 220, the wafer 900 can rotate relative to the air supply hole 141 on the air supply pipe 140, thereby ensuring that the deposition amount of the process gas at any position on the wafer 900 is relatively more uniform, and improving the efficiency of the wafer 900. Craftsmanship effect.
  • the process gas In order to ensure that the process gas can be transported from the gas source to the gas storage part 310, during the process of transporting the process gas, the process gas needs to have a certain pressure, that is, the process gas in the gas supply pipeline 140 also has a certain pressure. .
  • the pressure of the process gas in the gas storage part 310 is relatively greater.
  • the semiconductor heat treatment equipment disclosed in the embodiment of the present application also includes a first heating mechanism and a second heating mechanism. The first heating mechanism is provided in the heating pipeline to heat the air inlet section 110 to the first preset temperature.
  • the second heating mechanism is provided on the gas storage component 310 to heat the gas storage component 310 to the second preset temperature. Under the action of the first heating mechanism and the second heating mechanism, it is relatively more difficult to liquefy the process gas in the air inlet section 110 and the gas storage part 310, thereby maximizing the prevention of liquefaction of the process gas during transportation. Phenomenon, improve the transmission efficiency of process gas.
  • both the first heating mechanism and the second heating mechanism can be heating devices such as heating wires, and the first heating mechanism can be wrapped outside the air inlet section 110 to provide heating for the air inlet section 110 .
  • the second heating mechanism can be wrapped in the air storage member 310 in order to provide heating function for the gas storage member 310, the difficulty of this arrangement is relatively small.
  • the specific values of the first preset temperature and the second preset temperature they can be determined according to the actual type of the process gas. Taking the process gas as SiH2Cl2 as an example, the first preset temperature may be 40°C, and the second preset temperature may be between 120°C and 150°C.
  • control methods include:
  • the part of the air inlet pipeline between the gas source and the gas storage part 310 i.e., the air inlet section 110
  • the process gas output by the gas source is temporarily stored in the gas storage part of the gas storage assembly. 310, so that the process gas can generate pressure in the gas storage part 310.
  • control method of the semiconductor heat treatment equipment disclosed in the embodiment of the present application also includes:
  • the amount of process gas required for multiple wafers 900 to perform corresponding processes can be obtained based on parameters such as the number and size of wafers 900 in the process chamber 210, combined with specific types of processes, etc. Then, when the gas storage amount of the process gas in the gas storage part 310 reaches the first preset value, the first valve 410 is closed and the second valve 420 is opened, so that the process gas stored in the gas storage part 310 can be stored in the gas storage part 310 .
  • the specific value of the first preset value of the process gas in the gas storage part 310 can also be tested.
  • it can be a gas storage
  • the first preset value of the process gas in the component 310 is set to a specific value.
  • the control method disclosed in the above embodiment of the application is used to control the semiconductor heat treatment equipment to perform corresponding gas supply work, and then, the multiple wafers 900 being tested are After completing the deposition process, etc., by detecting the thickness and uniformity of the deposition layers on all wafers 900, the corresponding relationship between the aforementioned first preset value and the process result can be obtained.
  • multiple sets of corresponding data can be obtained by changing the specific value of the first preset value and correspondingly completing the deposition process of the wafer 900. Based on the multiple sets of corresponding data, the storage amount of the process gas in the gas storage part 310 can be obtained. Correspondence between the first preset value and specific parameters such as the size and quantity of the wafer 900 . During the subsequent use of the semiconductor heat treatment equipment, the specific size of the first preset value can be determined correspondingly based on the aforementioned correspondence and parameters such as the number and size of the wafers 900 to be processed, to ensure that the process effect of the wafers 900 is relatively good. better.
  • the above control method also includes:
  • the process gas In order to ensure that the process gas can be transported from the gas source to the gas storage part 310, during the process of transporting the process gas, the process gas needs to have a certain pressure, that is, the process gas in the gas supply pipeline 140 also has a certain pressure. . At the same time, because gas is easily liquefied under pressure, and some types of process gases have a certain viscosity after liquefaction, which is not conducive to process gas transportation. Correspondingly, the pressure of the process gas in the gas storage part 310 is relatively greater.
  • the embodiment of the present application can liquefy the process gas in the air inlet section 110 and the gas storage member 310 by heating the air inlet section 110 to the first preset temperature and heating the gas storage member 310 to the second preset temperature. It is relatively more difficult, thereby maximizing the prevention of liquefaction of process gas during transportation and improving the transportation efficiency of process gas.
  • the second preset temperature can be made higher than the first preset temperature to ensure that the pressure in the gas storage part 310 is Process gases rarely liquefy.
  • the specific values of the first preset temperature and the second preset temperature It can be determined based on the actual type of process gas. Taking the process gas as SiH2Cl2 as an example, the first preset temperature may be 40°C, and the second preset temperature may be between 120°C and 150°C.

Abstract

本发明公开一种半导体热处理设备及其控制方法，半导体热处理设备包括工艺腔室、进气管路、送气管路和排气管路，所述进气管路的一端与气源连通，所述进气管路的另一端与位于所述工艺腔室中的所述送气管路连通，且所述送气管路和所述工艺腔室的中心轴平行，送气管路设有多个送气孔，且各送气孔均用于向工艺腔室内输送工艺气体；所述排气管路与所述工艺腔室连通，在进气管路上设置有储气组件，所述储气组件用于在储气量达到第一预设值时，依次经由进气管路和送气管路向所述工艺腔室提供工艺气体。上述技术方案可以解决工艺过程中工艺腔室中距离进气管路相对较远的位置的工艺气体的浓度相对较小的问题。

Description

半导体热处理设备及其控制方法 技术领域
本发明涉及半导体制造技术领域，尤其涉及一种半导体热处理设备及其控制方法。
背景技术
在半导体的制造过程中，可以利用工艺气体在晶圆等半导体的表面形成绝缘层或介质层等结构。目前，通常将多个晶圆沿特定方向，如高度方向排列且容纳在工艺腔室内，利用进气管路将气源提供的工艺气体供入工艺腔室内，以使工艺气体沉积在多个晶圆的表面。但是，受工艺特性影响，在通入工艺气体的过程中，工艺气体的压力相对较小，且由于工艺腔室设有排气管路，在工艺气体被通入工艺腔室之后，工艺腔室中距离进气管路相对较远的位置的工艺气体的浓度相对较小，导致位于该区域内的晶圆的工艺结果不满足要求。
发明内容
本发明公开一种半导体热处理设备及其控制方法，以解决目前工艺过程中，工艺腔室中距离进气管路相对较远的位置的工艺气体的浓度相对较小，导致位于该区域内的晶圆的工艺结果不满足要求的问题。
为了解决上述问题，本发明采用下述技术方案：
第一方面，本发明公开一种半导体热处理设备，包括工艺腔室、进气管路、送气管路和排气管路，所述进气管路的一端与气源连通，所述进气管路的另一端与位于所述工艺腔室中的所述送气管路连通，且所述送气管路和所述工艺腔室的中心轴平行，所述送气管路设有多个送气孔，且各送气孔均用 于向所述工艺腔室内输送工艺气体；所述排气管路与所述工艺腔室连通，在进气管路上设置有储气组件，所述储气组件用于在储气量达到第一预设值时，依次经由所述进气管路和所述送气管路向所述工艺腔室提供工艺气体。
第二方面，本发明公开一种半导体热处理设备的控制方法，其包括：
通过所述进气管路向所述储气组件充气；
在所述储气组件的储气量达到第一预设值的情况下，向所述工艺腔室提供工艺气体。
本发明采用的技术方案能够达到以下有益效果：
本申请实施例共公开一种半导体热处理设备，其中，进气管路的一端与气源连通，另一端与位于工艺腔室内的送气管路连通，送气管路和工艺腔室的中心轴平行，该送气管路设有多个送气孔，且各送气孔均用于向工艺腔室输送工艺气体。工艺腔室还与排气管路连通，以保证气路通畅，还可以利用排气管路稳定工艺腔室内的工作压力。
在上述半导体热处理设备中，在进气管路上设置有储气组件。在储气件内的工艺气体的储气量达到第一预设值的情况下，储气组件依次经由进气管路和送气管路向工艺腔室提供工艺气体，进而使储气件内的工艺气体即可在自身压力的作用下，较为迅速地经进气管路扩散至送气管路内，由于储气件的工艺气体具有一定的压力，从而使得工艺气体自储气件内输出之后，工艺气体可以较为可靠地移动至送气管路中与储气件距离较远的送气孔处，保证送气管路的多个送气孔内可以输出较为均匀的工艺气体，保证任一晶圆的工艺结果均满足工艺要求。
附图说明
此处所说明的附图用来提供对本发明的进一步理解，构成本发明的一部分，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。在附图中：
图1为本申请实施例公开的半导体热处理设备的结构示意图；
图2为本申请实施例公开的半导体热处理设备中送气管路的一种结构示意图；
图3为本申请实施例公开的半导体热处理设备中送气管路的另一种结构示意图；
图4为本申请实施例公开的半导体热处理设备中储气件的一种结构示意图；
图5为本申请实施例公开的半导体热处理设备中储气件的另一种结构示意图；
图6为本申请实施例公开的半导体热处理设备的控制方法的流程图。
附图标记说明：
110-进气段、120-连通段、130-排气管路、140-送气管路、141-送气孔、
210-工艺腔室、220-旋转机构、
310-储气件、311-第一缓冲段、312-平直段、313-第二缓冲段、320-真空连接径向密封接头、330-接头连接件、
410-第一阀门、420-第二阀门、430-第三阀门、440-第一调压阀、450-第二调压阀、
510-第一压力检测件、520-第二压力检测件、530-质量流量控制器、
600-废气处理设备、
900-晶圆。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面将结合本发明具体实施例及相应的附图对本发明技术方案进行清楚、完整地描述。显然，所描述的实施例仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有 其他实施例，都属于本发明保护的范围。
以下结合附图，详细说明本发明各个实施例公开的技术方案。
如图1-图5所示，本发明实施例公开一种半导体热处理设备，采用该半导体热处理设备可以使晶圆900与工艺气体相互作用，进而使工艺气体沉积在晶圆900的表面。半导体热处理设备具体包括进气管路、排气管路130、送气管路140、工艺腔室210和储气组件。其中，进气管路上设置有储气组件，为了便于下文描述，此处将进气管路分为进气段110和连通段120；储气组件具有储气阶段和放气阶段，为了保证储气组件能够在储气阶段和放气阶段之间相互切换，储气组件可以包括储气件310、第一阀门410和第二阀门420。
其中，工艺腔室210可以为晶圆900的加工提供工艺环境和容纳空间，且使工艺气体可以供给至工艺腔室210内与晶圆900作用。在晶圆900的加工过程中，可以使多个晶圆900等半导体容纳在工艺腔室210内，且使多个晶圆900规律排布。具体地，可以使多个晶圆900沿工艺腔室210的高度方向分布。当然，为了保证工艺气体可以沉积在任一晶圆900的表面，多个晶圆900中任意相邻的两个晶圆900之间均需要预留空隙。另外，工艺腔室210内可以设置有承载机构，以利用承载机构承载多个晶圆900，承载机构具体可以为晶舟。
工艺气体可以利用气源提供，气源具体可以为储气装置，出于对半导体加工中所用的工艺气体的安全性考虑，气源可以为供气管路，以防止工艺气体长时间处于相对高压的状态而存在安全隐患。
在工艺气体的输送过程中，可以使进气管路的进气段110的一端与气源连通，且使进气段110的另一端与储气件310连通，进而使工艺气体可以经进气段110被输送至储气件310内。具体地，进气段110可以采用不锈钢等金属材料形成，这也可以防止工艺气体与进气段110相互反应，对工艺过程 产生不利影响。气源和储气件310二者与进气段110之间均可以通过连接接头和密封垫之类的连通器件相互连通，且保证进气段110与气源之间，以及进气段110和储气件310之间均形成较为可靠的密封连接关系。另外，进气段110的长度和流量等参数均可以根据实际需求确定，此处不作限定。
同时，第一阀门410设置于进气管路的进气段110上，也即，第一阀门410设置于进气管路位于储气件310的上游的部分上，以利用第一阀门410控制进气段110与储气件310之间的通断状态。在第一阀门410处于关闭状态的情况下，进气段110与储气件310之间断开，气源输出的工艺气体无法自进气段110被输送至储气件310内；对应地，在第一阀门410处于开启状态的情况下，进气段110与储气件310之间相互连通，气源输出的工艺气体即可经进气段110被输送至储气件310之内。具体地，第一阀门410可以为电磁阀或气动阀等。
如上所述，工艺腔室210可以为晶圆900提供工艺环境，基于此，为了保证工艺气体可以被输送至工艺腔室210内，且使工艺气体可以较为均匀地被输送向多个晶圆900所在的区域处，可选地，送气管路140设置于工艺腔室210内，以利用送气管路140将工艺气体输送至工艺腔室210的不同区域处。同时，为了尽量保证送气管路140可以将工艺气体输送至工艺腔室210中的任意位置，可以使送气管路140与工艺腔室210的中心轴平行。其中，工艺腔室的中心轴即为工艺腔室210的高度方向，也为工艺腔室210内晶圆900的排布方向。
更具体地，送气管路140上可以设有多个送气孔141，且各送气孔141均用于向工艺腔室210内输送工艺气体，多个送气孔141沿容纳于工艺腔室210内的多个晶圆900的排布方向分布，从而使多个送气孔141所形成的送气区域可以与多个晶圆900等半导体所处的区域对应，进而使送气管路140可以尽量覆盖多个晶圆900所在的区域，使工艺气体可以作用于任一晶圆900 上。
如图1所示，储气件310通过进气管路的连通段120与送气管路140的一端连通，从而保证储气件310内工艺气体可以经连通段120和送气管路140被输送至工艺腔室210之内。连通段120亦可以采用金属等材料形成，且储气件310和送气管路140与连通段120之间均形成有密封连接关系。
当然，为了使储气件310内的工艺气体可以受控地被输送至工艺腔室210内，如图1所述，第二阀门420设置于连通段120上，也即，第二阀门420设置于进气管路中位于储气件310的下游的部分上，进而利用第二阀门420的启闭控制储气件310与工艺腔室210之间的通断关系。具体来说，在第二阀门420处于开启状态的情况下，储气件310内的工艺气体可以经连通段120被输送至工艺腔室210内，在第二阀门420处于关闭状态的情况下，储气件310内的工艺气体则无法被输送至工艺腔室210内。其中，第二阀门420可以为电磁阀或气动阀。
另外，为了在工艺过程中和工艺结束后可以将工艺过程中产生的废气排出至工艺腔室210之外，本申请实施例公开的半导体热处理设备中，工艺腔室210还与排气管路130的一端连通，排气管路130的另一端配置为与废气处理设备600连通，进而在工艺过程中，如果工艺腔室210的压力超过预设压力范围时，即可通过废气处理设备600抽吸工艺腔室210内的气体，使工艺腔室210内的压力下降至预设压力范围内，提升工艺效果。当然，在工艺过程完成之后，亦可以在废气处理设备600的作用下，将工艺腔室210内的废气抽走。
为了尽量降低排气管路130内的废气对工艺腔室210中进行的工艺过程产生不利影响，可选地，排气管路130上可以设置有第二调压阀450，且通过第二调压阀450为废气处理设备600和工艺腔室210之间提供通断作用。另外，为了较为准确地获知工艺腔室210内的具体压力情况，还可以在排气 管路130上设置第二压力检测件520，且使第二压力检测件520位于工艺腔室210和第二调压阀450之间，以利用第二压力检测件520确定工艺腔室210内的压力是否满足预设压力范围，且在工艺腔室210内的压力超过预设压力范围的情况下，利用第二调压阀450对工艺腔室210内的压力进行调节，保证工艺腔室210内的工作压力始终处于预设压力范围内，提升工艺效果。
基于上述半导体热处理设备，在其需要进行工艺的过程中，可以先将多个晶圆900放置在工艺腔室210内，且通过排气管路130和废气处理设备600对工艺腔室210内的工艺环境进行处理，使工艺腔室210内的工艺环境满足工艺需求。之后，可以打开第一阀门410，且关闭第二阀门420，以使气源供应的工艺气体可以经进气段110被输送至储气件310内进行存储。随着工艺气体被不断地输送至储气件310内，储气件310内的工艺气体的压力也随之上升。根据工艺腔室210内的晶圆900的数量和尺寸等参数，结合工艺的具体种类等，可以得到多个晶圆900进行对应工艺时所需的工艺气体的量，继而，在储气件310中的工艺气体的储气量达到第一预设值的情况下，关闭第一阀门410，且打开第二阀门420，从而使储气件310内存储的工艺气体能够在自身压力作用下，较为快速地经连通段120输送至送气管路140内，且自送气管路140上的多个送气孔141被送入工艺腔室210内。当然，为了保证自储气件310经连通段120送入送气管路140内的工艺气体均具有较大的压力，以保证送气管路上任一送气孔141的气压相当，进而使送气管路140送入工艺腔室210内任意位置的工艺气体的量均较为均匀，可以通过对储气件310内剩余的储气量进行控制，且在储气件310内的气压稍大于或等于工艺腔室210内的气压的情况下，通过第二阀门420控制储气件310停止向工艺腔室供气。
具体地，可以利用流量计等器件计量进气段110在预设时间段内输送至储气件310内的工艺气体的量；或者，还可以根据工艺气体的种类和储气件 310的容积等参数，得到储气件310内存储有满足需求的工艺气体的量时，储气件310内工艺气体的压力等参数，进而，可以利用压力检测件对储气件310内工艺气体的压力进行检测，间接地获得储气件310内存储的工艺气体的量。
本申请实施例公开一种半导体热处理设备，其中，进气管路的一端与气源连通，另一端与位于工艺腔室内的送气管路连通，具体地，气源通过进气管路的进气段110与储气件310连通，储气件310通过进气管路的连通段120与位于工艺腔室210内的送气管路140连通，送气管路140和工艺腔室210的中心轴平行，该送气管路设有多个送气孔141，且各送气孔141均用于向工艺腔室210输送工艺气体。工艺腔室210还与排气管路130连通，以保证气路通畅，还可以利用排气管路130稳定工艺腔室210内的工作压力。
在上述半导体热处理设备中，当储气件310内的工艺气体的储气量达到第一预设值的情况下，储气组件310依次经由进气管路和送气管路140向工艺腔室210提供工艺气体，进而使储气件310内的工艺气体即可在自身压力的作用下，较为迅速地经连通段120扩散至送气管路140内，由于储气件310的工艺气体具有一定的压力，从而使得工艺气体自储气件310内输出之后，工艺气体可以较为可靠地移动至送气管路140中与储气件310距离较远的送气孔141处，保证送气管路140的多个送气孔141内可以输出较为均匀的工艺气体，保证任一晶圆900的工艺结果均满足工艺要求。
如上所述，可以通过测量流量或压力的方式获取储气件310内存储的工艺气体的量，一种具体的实施方式是，半导体热处理设备还包括第一压力检测件510，第一压力检测件510设置于进气管路上，且位于第一阀门410和储气件310之间，即设置于进气管路的进气段110上。第一压力检测件510用于检测储气件310内的气体。第一压力检测件510具体可以为压力计或压力传感器等，在已知储气件310的容积和工艺气体的种类等参数的情况下， 可以根据第一压力检测件510的测量值，间接得到储气件310内存储的工艺气体的量。
在本申请的另一实施例中，半导体热处理设备还包括质量流量控制器530，质量流量控制器530安装于进气段110上，在质量流量控制器530的作用下，可以更为精准地获取预设时间段内经进气段110输送至储气件310内的工艺气体的量，提升储气件310内工艺气体的量的测量值的准确性。
为了进一步提升储气件310内工艺气体的量的测量值的准确性，可选地，半导体热处理设备中可以一并设有第一压力检测件510和质量流量控制器530，以通过多种维度获取储气件310内存储的工艺气体的量，最大化地提升测量值的准确性。
为了进一步便于控制工艺气体的输送过程，可选地，半导体热处理设备还包括第三阀门430，第三阀门430安装于第一阀门410和质量流量控制器530之间，且在不需要输送工艺气体时，可以使第三阀门430处于关闭状态，提升工艺气体的输送安全性。
另外，半导体热处理设备还可以包括第一调压阀440，第一调压阀440安装在进气段110上，且第一调压阀440位于质量流量控制器530和气源之间，以在工艺过程中需要向半导体热处理设备输送工艺气体时，通过第一调压阀440调节工艺气体在进气段110内的输送压力，提升工艺气体的输送稳定性。
为了进一步提升分别输送向工艺腔室210中多个晶圆900的工艺气体的量的均匀程度，可以对送气管路140上的送气孔141的结构和/或布设方式进行设计，以使输送向任一晶圆900的工艺气体的量均基本一致。
可选地，如图2所示，多个送气孔141沿工艺腔室210的中心轴分布，且沿送气管路140的送气方向(如图2中的箭头所示)，可以使多个送气孔141的送气截面积逐渐增大，也即，任一送气孔141的送气截面积均不同， 且越远离连通段120的送气孔141的送气截面积越大。其中，送气孔141的送气截面积为送气孔141中垂直于自身轴向的截面的面积，其可以表征送气孔141的送气能力，送气截面积越大，则该送气孔141的送气能力越强。在采用这种技术方案的情况下，即便工艺气体在不同的送气孔141处的压力存在差异，由于远离储气件310的送气孔141的面积相对更大，这可以补偿因工艺气体在远离储气件310的送气孔141处的压力相对较小对该送气孔141的出气量产生的负面影响，以尽量保证多个送气孔141各自的出气量基本相同。另外，在采用上述技术方案的情况下，可以使任意相邻的两个送气孔141之间的间距相等。
如图3所示，在本申请的另一实施例中，多个送气孔141沿工艺腔室210的中心轴分布，且沿送气管路140的送气方向(如图3中的箭头所示)，多个送气孔141中任意相邻的两个送气孔141之间的间距逐渐减小。也就是说，在送气管路140上布设送气孔141的过程中，越远离连通段120的位置的送气孔141越密集，进而通过提升送气孔141的密集程度补偿因该区域内的送气孔141与储气件310之间的间距较大，送气孔141处的气压相对较小的负面影响，从而保证输送至多个晶圆900上任一晶圆900上的工艺气体的量基本相同。另外，在本申请实施例中公开的半导体热处理设备中，可以使任一送气孔141的半径均相同，以降低送气孔141的加工难度。
在本申请的另一实施例中，多个送气孔141沿工艺腔室210的中心轴分布，且沿送气管路140的送气方向，可以使多个送气孔141的送气截面积逐渐增大的同时，还可以使多个送气孔141中任意相邻的两个送气孔141之间的间距逐渐较小，以最大化地提升多个送气孔141的送气量的均匀性。当然，在实际应用过程中，可以对送气孔141的送气截面积的具体参数和送气孔141之间的间距进行适应性调整，尽量保证多个送气孔141的送气量基本一致。
如上所述，储气件310可以存储工艺气体，以使工艺气体在储气件310 内被加压，提升工艺气体的扩散能力和扩散速度，进而提升工艺腔室210内不同区域处的工艺气体的均匀性。基于此，为了提升储气件310对工艺气体的存储和释放性能，可选地，如图4和图5所示，储气件310包括沿其进气方向(即，图4和图5所示由左向右的方向)依次串接的第一缓冲段311、平直段312和第二缓冲段313，三者一并组成储气件310。在装配储气件310的过程中，进气段110的一端用于与气源连通，进气段110的另一端与第一缓冲段311远离平直段312的一端连通，第二缓冲段313远离平直段312的一端与平直段312的一端连通，连通段120的另一端与送气管路140连通。
具体地，第一缓冲段311、第二缓冲段313和平直段312均可以采用金属等结构强度相对较大的材料形成，以提升储气件310的储气性能。并且，第一缓冲段311和第二缓冲段313与平直段312之间可以采用焊接等方式固定连接，为了提升三者之间的连接可靠性，可选地，第一缓冲段311、平直段312和第二缓冲段313可以采用一体成型的方式形成。
并且，沿储气件310的进气方向，第一缓冲段311中垂直于进气方向(即，图4和图5所示由左向右的方向)的截面面积逐渐增大，且第二缓冲段313中垂直于进气方向(即，图4和图5所示由左向右的方向)的截面面积逐渐减小，这使得第一缓冲段311和第二缓冲段313的结构均相对平缓，且在气体自第一缓冲段311进入储气件310之内后，可以逐渐扩散，降低气体的输送难度，在气体自第二缓冲段313经连通段120被送入送气管路140的过程中，使得气体可以在第二缓冲段313处逐渐被压缩整流，提升工艺气体的扩散速度和扩散效果。
另外，在第一缓冲段311和第二缓冲段313均为相对平缓的结构的情况下，还可以尽量防止工艺气体在储气件310内流动时受到阻碍，提升工艺气体的流动能力。相应地，为了进一步防止工艺气体自第一缓冲段311流动至第二缓冲段313时受到阻碍，可以使平直段312沿进气方向的投影与平直段 312中垂直于进气方向的截面形状相同，也即，平直段312整体上为直线状结构件，这可以防止工艺气体在储气件310内流动时受到平直段312阻碍，保证工艺气体的流动顺畅性。
更具体地，平直段312可以为圆柱状结构件，对应地，第一缓冲段311和第二缓冲段313二者与平直段312连接的端面亦均为圆形结构，这可以进一步提升工艺气体在储气件310内的流动性能，且防止工艺气体淤积在储气件310的边角处，提升对工艺气体的利用率。
如上所述，本申请实施例公开的半导体热处理设备中，第一缓冲段311与进气段110之间，以及第二缓冲段313与连通段120之间均可以利用连接接头和密封垫连接，使部件间具有良好的密封性。在本申请的另一实施例中，储气件310与进气段110之间，和/或储气件310与连通段120之间均可以通过真空连接径向密封接头320(即VCR接头，Vacuum Coupling Radius Seal)密封连接，真空连接径向密封接头320可以保证储气件310与进气段110之间，以及储气件310与连通段120之间的密封性能相对更高，进一步防止工艺气体泄露，提升工艺安全性。当然，连通段120与送气管路140之间，以及工艺腔室210与排气管路130之间等相互连接的两个部件之间均可以通过真空连接径向密封接头320相互连接，保证半导体热处理设备中任意相连的两个部件之间的连接可靠性和密封性均相对较高。
另外，可以利用接头连接件330辅助连接储气件310和真空连接径向密封接头320，具体来说，在将真空连接径向密封接头320穿入接头连接件330中之后，将储气件310的端部与接头连接件330焊接连接，即可使真空连接径向密封接头320与储气件310连为一体。
如上所述，半导体热处理设备可以包括承载机构，以使多个晶圆900均可以被承载于承载机构上。为了进一步提升任一晶圆900上工艺气体的沉积量的均匀性，可选地，本申请实施例公开的半导体热处理设备还可以包括旋 转机构220，旋转机构220具体可以为旋转电机等。旋转机构220安装于工艺腔室210，且承载机构设置于工艺腔室210中，且安装于旋转机构220上，从而使旋转机构220可以带动承载机构旋转，旋转的方向具体为围绕多个晶圆900的排布方向的方向。
例如，多个晶圆900可以沿工艺腔室210的高度方向排布，则旋转机构220即可带动承载机构在围绕工艺腔室210的高度方向的方向上旋转，也即，使承载机构在水平面内旋转。在旋转机构220的作用下，使得晶圆900可以相对送气管路140上的送气孔141旋转，从而保证晶圆900上任意位置处的工艺气体的沉积量相对更为均匀，提升晶圆900的工艺效果。
为了保证工艺气体能够自气源被输送至储气件310内，在工艺气体的输送过程中，需要使工艺气体具有一定的压力，也即，送气管路140内的工艺气体也具有一定的压力。同时，由于气体受压容易液化，且部分种类的工艺气体液化后具有一定的黏性，从而不利于工艺气体输送工作的进行，相应地，储气件310内的工艺气体的压力相对更大，基于此，本申请实施例公开的半导体热处理设备还包括第一加热机构和第二加热机构，第一加热机构设置于加热管路，以加热进气段110至第一预设温度，第二加热机构设置于储气件310，以加热储气件310至第二预设温度。在第一加热机构和第二加热机构的作用下，使得进气段110和储气件310内的工艺气体的液化难度相对更大，进而最大化地防止工艺气体在被输送过程中出现液化的现象，提升工艺气体的输送效率。
另外，由于储气件310内的工艺气体的压力大于进气段110内工艺气体的压力，基于此，可以使第二预设温度高于第一预设温度，以保证储气件310内的工艺气体基本不会液化。具体地，第一加热机构和第二加热机构均可以为加热丝等加热器件，且可以使第一加热机构包覆在进气段110之外，以为进气段110提供加热作用。相应地，可以使第二加热机构包覆在储气件310 之外，以为储气件310提供加热作用，这种布设方式的难度也相对较小。至于第一预设温度和第二预设温度的具体值，则可以根据工艺气体的实际种类确定。以工艺气体为SiH2Cl2为例，第一预设温度可以为40℃，第二预设温度可以在120～150℃之间。
基于上述半导体热处理设备，本申请实施例还公开一种半导体热处理设备的控制方法，以利用该控制方法控制上述任一半导体热处理设备。如图6所示，控制方法包括：
S1、通过进气管路向储气组件充气。
也即，在工艺开始之后，将进气管路中位于气源和储气件310之间的部分(即进气段110)连通，使气源输出的工艺气体暂存在储气组件的储气件310内，使工艺气体可以在储气件310内产生压力。
在上述步骤S1之后，本申请实施例公开的半导体热处理设备的控制方法还包括：
S2、在储气组件中的储气量达到第一预设值的情况下，向工艺腔室210提供工艺气体。
具体来说，可以根据工艺腔室210内晶圆900的数量和尺寸等参数，结合工艺的具体种类等，得到多个晶圆900进行对应工艺时所需的工艺气体的量。继而，在储气件310中的工艺气体的储气量达到第一预设值的情况下，关闭第一阀门410，且开启第二阀门420，以使储气件310内存储的工艺气体能够在自身压力作用下，较为快速地经连通段120输送至送气管路140内，且自送气管路140上的多个送气孔141被送入工艺腔室210内，完成工艺气体的输送工作，且保证送气管路140对应于多个晶圆900的出气量基本一致，提升工艺结果的均匀性。
另外，在本申请实施例公开的半导体热处理设备的使用过程中，还可以对储气件310内工艺气体的第一预设值的具体值进行测试，具体可以为储气 件310内工艺气体的第一预设值设定一具体值，之后，采用本申请上述实施例公开的控制方法控制半导体热处理设备进行相应地送气工作，然后，使被测试的多个晶圆900完成沉积工艺等，通过对所有晶圆900上的沉积层的厚度和均匀性进行检测，可以得到前述第一预设值与工艺结果之间的对应关系。之后，可以通过改变第一预设值的具体值，且对应使晶圆900完成沉积工艺，得到多组对应数据，基于多组对应数据，即可得到储气件310内工艺气体的存储量的第一预设值与晶圆900的尺寸和数量等具体参数之间的对应关系。在半导体热处理设备的后续使用过程中，即可根据前述对应关系和待加工的晶圆900的数量和尺寸等参数，对应地确定第一预设值的具体大小，保证晶圆900的工艺效果相对较好。
在一些可选的实施例中，上述控制方法还包括：
加热进气段110至第一预设温度；
加热储气组件至第二预设温度；其中，该第二预设温度高于所述第一预设温度。
为了保证工艺气体能够自气源被输送至储气件310内，在工艺气体的输送过程中，需要使工艺气体具有一定的压力，也即，送气管路140内的工艺气体也具有一定的压力。同时，由于气体受压容易液化，且部分种类的工艺气体液化后具有一定的黏性，从而不利于工艺气体输送工作的进行，相应地，储气件310内的工艺气体的压力相对更大，基于此，本申请实施例通过加热进气段110至第一预设温度，并加热储气件310至第二预设温度，可以使得进气段110和储气件310内的工艺气体的液化难度相对更大，进而最大化地防止工艺气体在被输送过程中出现液化的现象，提升工艺气体的输送效率。
另外，由于储气件310内的工艺气体的压力大于进气段110内工艺气体的压力，基于此，可以使第二预设温度高于第一预设温度，以保证储气件310内的工艺气体基本不会液化。至于第一预设温度和第二预设温度的具体值， 则可以根据工艺气体的实际种类确定。以工艺气体为SiH2Cl2为例，第一预设温度可以为40℃，第二预设温度可以在120～150℃之间。
本发明上文实施例中重点描述的是各个实施例之间的不同，各个实施例之间不同的优化特征只要不矛盾，均可以组合形成更优的实施例，考虑到行文简洁，在此则不再赘述。
以上所述仅为本发明的实施例而已，并不用于限制本发明。对于本领域技术人员来说，本发明可以有各种更改和变化。凡在本发明的精神和原理之内所作的任何修改、等同替换、改进等，均应包含在本发明的权利要求范围之内。

Claims (11)

  1. 一种半导体热处理设备，包括工艺腔室、进气管路、送气管路和排气管路，所述进气管路的一端与气源连通，所述进气管路的另一端与位于所述工艺腔室中的所述送气管路连通，且所述送气管路和所述工艺腔室的中心轴平行，所述送气管路设有多个送气孔，且各送气孔均用于向所述工艺腔室内输送工艺气体；所述排气管路与所述工艺腔室连通，其特征在于，在进气管路上设置有储气组件，所述储气组件用于在储气量达到第一预设值时，依次经由所述进气管路和所述送气管路向所述工艺腔室提供工艺气体。
  2. 根据权利要求1所述的半导体热处理设备，其特征在于，多个所述送气孔沿所述中心轴分布，且沿所述送气管路的送气方向，多个送气孔的送气截面积逐渐增大。
  3. 根据权利要求1所述的半导体热处理设备，其特征在于，多个所述送气孔沿所述中心轴分布，且沿所述送气管路的送气方向，多个所述送气孔中任意相邻的两个所述送气孔之间的间距逐渐减小。
  4. 根据权利要求1所述的半导体热处理设备，其特征在于，所述储气组件包括储气件、第一阀门和第二阀门，所述第一阀门设置于所述进气管路位于所述储气件的上游的部分上，所述第二阀门设置于所述进气管路位于所述储气件的下游的部分上；
    所述进气管路包括进气段和连通段；所述储气件包括沿其进气方向依次串接的第一缓冲段、平直段和第二缓冲段，所述进气段的一端用于与所述气源连通，所述进气段的另一端与所述第一缓冲段远离所述平直段的一端连通，所述第二缓冲段远离所述平直段的一端与所述连通段的一端连通，所述连通段的另一端与所述送气管路连通；
    沿所述储气件的进气方向，所述第一缓冲段中垂直于所述进气方向的截面面积逐渐增大，且所述第二缓冲段中垂直于所述进气方向的截面面积逐渐减小；
    所述平直段沿所述进气方向的投影与所述平直段中垂直于所述进气方向的截面形状相同。
  5. 根据权利要求4所述的半导体热处理设备，其特征在于，所述第一缓冲段与所述进气段之间，以及所述第二缓冲段与所述连通段之间均通过真空连接径向密封接头密封连接。
  6. 根据权利要求1所述的半导体热处理设备，其特征在于，所述半导体热处理设备还包括第一加热机构和第二加热机构，所述进气管路包括位于所述储气组件上游的进气段和位于所述储气组件下游的连通段，所述第一加热机构设置于所述进气段上，以用于加热所述进气段；所述第二加热机构设置于所述储气组件，以用于加热所述储气组件。
  7. 根据权利要求1所述的半导体热处理设备，其特征在于，所述半导体热处理设备还包括第一压力检测件，所述第一压力检测件用于检测所述储气组件内的气压。
  8. 根据权利要求1所述的半导体热处理设备，其特征在于，所述半导体热处理设备还包括质量流量控制器，所述质量流量控制器安装于所述进气管路上。
  9. 根据权利要求1所述的半导体热处理设备，其特征在于，所述半导体热处理设备还包括承载机构和旋转机构，所述旋转机构安装于所述工艺腔室，所述承载机构设置于所述工艺腔室中，且安装于所述旋转机构，所述旋 转机构用于带动所述承载机构围绕所述中心轴转动，所述承载机构用于承载多个晶圆。
  10. 一种半导体热处理设备的控制方法，其特征在于，包括：
    通过进气管路向储气组件充气；
    在所述储气组件的储气量达到第一预设值的情况下，向工艺腔室提供工艺气体。
  11. 根据权利要求10所述的半导体热处理设备的控制方法，其特征在于，所述半导体热处理设备还包括第一加热机构和第二加热机构，所述进气管路包括位于所述储气组件上游的进气段和位于所述储气组件下游的连通段，所述第一加热机构设置于所述进气段上，以用于加热所述进气段；所述第二加热机构设置于所述储气组件，以用于加热所述储气组件；
    所述控制方法还包括：
    加热所述进气段至第一预设温度；
    加热所述储气组件至第二预设温度；其中，所述第二预设温度高于所述第一预设温度。
PCT/CN2023/095228 2022-05-30 2023-05-19 半导体热处理设备及其控制方法 WO2023231805A1 (zh)

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