WO2023228918A1 - Light-emitting device and method for producing light-emitting device - Google Patents

Abstract

The present invention comprises: a substrate; and a plurality of light-emitting elements positioned on the substrate and arrayed along a predetermined direction. A portion of the plurality of light-emitting elements constitutes a first transfer region, while another portion of the plurality of light-emitting elements constitutes a second transfer region. The light-emitting characteristic distribution-states of the light-emitting elements in the first transfer region and the light-emitting elements in the second transfer region are different. The first transfer region and the second transfer region overlap in a state where the same are offset in the predetermined direction.

Description

Light-emitting device and method for manufacturing the light-emitting device

The present disclosure relates to a light emitting device in which variations in brightness, color, etc. of a light emitting element such as a micro LED (Light Emitting Diode; LED) are suppressed, and a method for manufacturing the same.

Conventional light emitting devices are described, for example, in Patent Documents 1 and 2.

US Patent No. 10748793 JP2019-104785A

A light-emitting device of the present disclosure includes a base and a plurality of light-emitting elements located on the base and arranged along a predetermined direction, and a part of the plurality of light-emitting elements constitutes a first region. , another part of the plurality of light emitting elements constitutes a second region, and the light emitting elements in the first region and the light emitting elements in the second region have different distribution states of light emitting characteristics, and The second regions overlap with each other while being shifted in the predetermined direction.

A method for manufacturing a light emitting device according to the present disclosure includes a first light emitting device that takes out a plurality of first light emitting elements from a semiconductor wafer along one direction, maintains the arrangement state at the time of taking out, and arranges them in a first region on a substrate. a plurality of second light emitting elements are taken out from the semiconductor wafer along a direction different from the one direction, and a second light emitting element is placed in a second region on the substrate while maintaining the arrangement state when taken out. 2 steps, in the second step, the plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap with each other with a shift in a predetermined direction. .

Further, in the method for manufacturing a light emitting device of the present disclosure, a plurality of first light emitting elements are taken out from a semiconductor wafer along one direction, and the arrangement state when taken out is maintained, and the plurality of first light emitting elements are arranged in a first region on a substrate. a first step of taking out a plurality of second light emitting elements from the semiconductor wafer along the one direction, and a second step of taking out a plurality of second light emitting elements from the semiconductor wafer, maintaining the arrangement state when taken out, and placing them in a second region on the substrate. and, in the second step, the second region is rotated at a predetermined rotation angle with respect to the first region, and the first region and the second region are oriented in a predetermined direction. The plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap in a shifted state.

Objects, features, and advantages of the present disclosure will become more apparent from the following detailed description and drawings.
FIG. 1 is a plan view schematically showing a light emitting device according to an embodiment of the present disclosure. It is a photograph showing the light emitting state of a display panel manufactured in order to confirm the occurrence of unevenness in light emitting characteristics. 3 is a front view schematically showing the arrangement of light emitting elements of the display panel shown in FIG. 2. FIG. 4 is a cross-sectional view taken along section line IV-IV in FIG. 3. FIG. FIG. 2 is a front view showing a light emitting element wafer. 6 is an enlarged view of section VI of FIG. 5. FIG. FIG. 3 is a partially enlarged plan view showing a state in which a light emitting element is mounted on a light emitting substrate. FIG. 2 is a plan view schematically showing a light emitting element wafer. FIG. 9 is an enlarged plan view of section IX of FIG. 8; FIG. 3 is a diagram showing a process of picking up a light emitting element using a stamp for mass transfer mounting. FIG. 3 is a diagram showing a process of mounting a light emitting element onto a light emitting substrate using a stamp. FIG. 2 is an enlarged plan view of a portion of the light emitting element wafer. FIG. 2 is a schematic plan view of a light emitting element wafer for checking brightness unevenness of the light emitting element wafer, and an enlarged plan view of a portion thereof. FIG. 2 is a schematic plan view of a light emitting element wafer for checking color unevenness of the light emitting element wafer, and an enlarged plan view of a portion thereof. FIG. 3 is a schematic plan view of a light emitting element wafer for checking brightness unevenness. FIG. 2 is a schematic plan view of a light emitting element wafer for checking color unevenness. FIG. 3 is a plan view of the light-emitting substrate showing a state in which a plurality of light-emitting elements are transferred from the light-emitting element wafer to a transfer area of the light-emitting substrate without changing the orientation using a stamp. There is a process of picking up multiple light emitting elements with a stamp and mounting them as is (a process of mounting without rotating the stamp 180 degrees) (also called a non-rotating mounting process), and a process of picking up a large number of light emitting elements with a stamp and mounting the stamp 180 degrees. FIG. 3 is a plan view schematically showing a mounted state of a light emitting substrate produced by alternately repeating a step of rotating and mounting (also referred to as a rotation mounting step). It is an enlarged photograph showing the luminance distribution when a boundary line between mounting areas (between stamps) is displayed when a large number of light emitting elements are mounted by a non-rotating mounting process. This is an enlarged photograph showing the luminance distribution when a large number of light emitting elements are mounted by rotating the stamp, that is, when a large number of light emitting elements are mounted by a rotational mounting process. 18A and 18B are graphs showing the brightness distribution at the detection position AA' in FIGS. 18A and 18B. It is an enlarged photograph showing the distribution of wavelengths (colors) with boundaries between mounting areas displayed. It is an enlarged photograph showing the wavelength distribution when a large number of light emitting elements are mounted by a rotational mounting process. 19B is a graph showing the wavelength distribution at the detection position BB' in FIGS. 19A and 19B. 1 is a partial plan view showing an example of a mounting structure of a light emitting device 1 of the present disclosure. 21 is a sectional view taken along the section line C1-C2 in FIG. 20. FIG. FIG. 6 is a diagram showing an arrangement state of light emitting elements when the one-dimensional stamp is shifted in the first direction X and the light emitting elements are mounted. FIG. 3 is a plan view of the light emitting substrate 10 showing the arrangement state of the light emitting elements when the two-dimensional stamp is shifted in the first direction X. FIG. FIG. 3 is a plan view of the light emitting substrate 10 showing the arrangement of light emitting elements when the two-dimensional stamp is shifted in the second direction Y. FIG. FIG. 2 is a plan view of the light emitting substrate 10 showing the arrangement of light emitting elements when a two-dimensional stamp is shifted in two directions. FIG. 7 is a plan view of the light-emitting substrate showing the arrangement of light-emitting elements when a plurality of light-emitting elements are transfer-mounted so that a first transfer area and a third transfer area smaller than the first transfer area overlap.

In the prior art disclosed in Patent Document 1, a light emitting element such as a micro LED formed on a semiconductor wafer is attached to a stamp and removed from the semiconductor wafer, and the stamp with the light emitting element attached is connected to an electrical contact on the surface of a target substrate. It is described that the electronic components are transferred to the target substrate by aligning the electronic components, bringing the electrodes of the light emitting elements into contact with pads on the surface of the target substrate, and pressing a stamp onto the target substrate.

In another conventional technique disclosed in Patent Document 2, an adhesive base material has a support member and an adhesive layer provided on the support member, and the support member has an uneven pattern having convex portions on one or both sides. However, it is described that the adhesive layer is provided so as to have a curved surface at least on the upper surface of the convex portion of the support member, thereby die-bonding a large number of fine light emitting elements.

In each of the conventional technologies described in Patent Documents 1 and 2 above, there are variations in the brightness and color (wavelength) of the target substrate onto which a large number of microscopic light emitting elements such as micro LEDs are transferred, resulting in a decrease in display quality. There's a problem. Therefore, there is a need for a light emitting device in which variations in brightness and color are suppressed.

Hereinafter, embodiments of the light emitting device of the present disclosure will be described with reference to the accompanying drawings. The light emitting device according to the embodiment of the present disclosure may include a well-known structure such as a circuit board, a wiring conductor, a control IC, and an L26I (not shown). In each figure, substantially corresponding parts are given the same reference numerals, and overlapping explanations will be omitted or simplified.

FIG. 1 is a plan view schematically showing a light emitting device according to an embodiment of the present disclosure. The light emitting device 1 of the present embodiment includes a base 2, which is located on the base 2, and arranged in alignment along a first direction X, which is a predetermined direction, and a second direction Y, which is perpendicular to the first direction X. and a plurality of light emitting elements 3. Among the plurality of light emitting elements 3 on the base 2, some of the light emitting elements 3a constitute a first area A1 (also referred to as a first transfer area A1), and some of the other light emitting elements 3b of the plurality of light emitting elements 3 constitute a first area A1 (also referred to as a first transfer area A1). constitutes a second area A2 (also referred to as a second transfer area A2). The light emitting element 3a (also referred to as the first light emitting element 3a) in the first transfer area A1 and the light emitting element 3b (also referred to as the second light emitting element 3b) in the second transfer area A2 have different distribution states of light emitting characteristics. The transfer area A1 and the second transfer area A2 overlap with each other by a distance ΔX in the first direction X and a distance ΔY in the second direction Y. In this embodiment, the other part is constituted by the remaining light emitting elements 3b excluding some of the light emitting elements 3a among the plurality of light emitting elements 3.

A configuration in which the light emitting elements 3a in the first transfer area A1 and the light emitting elements 3b in the second transfer area A2 have different distributions of light emission characteristics can be obtained by the following first manufacturing method or second manufacturing method. In the first manufacturing method, a plurality of first light emitting elements 3a to be mounted in the first transfer area A1 are taken out along one direction from a light emitting element wafer (semiconductor wafer), and the arrangement state when taken out is maintained. The first step of arranging the plurality of second light emitting elements 3b in the first transfer area A1 on the base 2 and the plurality of second light emitting elements 3b to be mounted in the second transfer area A2 are performed from the light emitting element wafer along a direction different from the one direction mentioned above. and a second step of taking it out and arranging it in the second transfer area A2 on the base 2 while maintaining the arrangement state when it was taken out. Then, in the second step, a plurality of second light emitting elements are arranged in the second transfer area A2 so that the first transfer area A1 and the second transfer area A2 overlap with each other while being shifted in a predetermined direction. A direction different from one direction in the light emitting device wafer may be, for example, a direction that intersects with one direction within an intersecting angle range of 30° to 330°, or a direction that intersects with one direction within an intersecting angle range of 60° to 300°. However, the range is not limited to these ranges. Note that "~" represents "to", and the same applies hereinafter.

In the second manufacturing method, a plurality of first light emitting elements 3a are taken out from a light emitting element wafer along one direction, and the arrangement state when taken out is maintained, and the plurality of first light emitting elements 3a are placed in a first transfer area A1 on the base 2. The first step is to take out the plurality of second light emitting elements 3b from the light emitting element wafer along the above-mentioned one direction, maintain the arrangement state when taken out, and place them in the second transfer area A2 on the base 2. A second step of doing so. In the second step, the second transfer area A2 is rotated at a predetermined rotation angle with respect to the first transfer area A1, and the first transfer area A1 and the second transfer area A2 are shifted in a predetermined direction. In this state, a plurality of second light emitting elements 3b are arranged in the second transfer area A2 so that the first transfer area A1 and the second transfer area A2 overlap. The predetermined rotation angle may be 90°, 180°, or 270°, but is not limited thereto.

The light emitting device 1 according to an embodiment of the present disclosure achieves the following effects with the above configuration. The plurality of light emitting elements 3a belonging to the first transfer area A1 and the plurality of light emitting elements 3b belonging to the second transfer area A2 have different distribution states of light emitting characteristics, and the plurality of light emitting elements 3a belonging to the first transfer area A1 The configuration is such that most of the light emitting elements 3b and most of the plurality of light emitting elements 3b belonging to the second transfer area A2 coexist. As a result, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized. Further, it is also possible to effectively prevent the boundaries between adjacent regions from being visually recognized.

The base body 2 may have various three-dimensional shapes such as a substrate shape, a flexible film shape, a block shape, and a spherical shape. The base 2 may have a flat surface on which a plurality of light emitting elements 3 can be mounted, a composite surface consisting of a plurality of flat surfaces, a curved surface, or a complex curved surface. For example, the base 2 may be a cylindrical body such as a utility pole, the surface of a building, the inner or outer surface of a vehicle such as a train, or the like. When the base body 2 is in the shape of a substrate, its shape in plan view may be a triangle, a rectangle, a trapezoid, a polygon of pentagon or more, a circle, an ellipse, or the like.

The semiconductor wafer may have a base material such as GaAs, GaIn, GaN, GaP, SiC, etc., and may have a trace amount of impurities such as Al, P, In, etc. added to the base material, but is not limited to these.

FIG. 2 is a photograph showing the light emitting state of the display panel 1p manufactured in order to confirm the occurrence of unevenness in light emitting characteristics. In order to confirm the occurrence of unevenness in the light emitting characteristics of a plurality of light emitting elements 3, the inventor of the present invention manufactured a display panel 1p in which light emitting elements 3 were mounted in the same transfer pattern. Note that the display device 1 is manufactured by providing accessory members such as a frame, a housing, operation buttons, and external input terminals to the display panel 1p. When all the light emitting elements 3 of this display panel 1p are made to emit light, the transfer areas A11, A12, A13, A21, A22, A23, A31, A32, and A33 arranged in 3 rows and 3 columns can be distinguished and visually recognized. That is, the boundaries between adjacent transfer areas A11 to A33 are visible. This boundary line is visible because the distribution of the emission wavelengths (colors) of the large number of light emitting elements 3 belonging to each transfer area A11 to A33 is the same, that is, the semiconductor wafer is transferred with the same transfer pattern. It depends. This reduces the display quality of the display device 1. When we checked an arbitrary region 9 on the boundary line between the two mutually adjacent transfer areas A13 and A23, we found that there was a wavelength difference between the small areas 9a and 9b on both sides of the boundary line (vertical boundary line) within the area 9. is 4 nm, and it can be seen that there is color unevenness. It has been confirmed that even such a slight wavelength difference is visible to the viewer as a boundary line, degrading the display quality. The display device 1 of the present disclosure solves the problems of the prior art.

Note that the number of a large number of light emitting elements 3 belonging to one transfer area (for example, transfer area A11), that is, the number of light emitting elements 3 transferred at one time, may be about 100 to 10,000, but It is not limited to this range.

FIG. 3 is a front view schematically showing the arrangement of light emitting elements of the display panel 1p shown in FIG. 2. FIG. 4 is a sectional view taken along section line IV-IV in FIG. On the first surface of the display panel 1p shown in FIG. 2, a plurality of connection pads 13 for mounting a plurality of light emitting elements 3 are provided in a grid pattern at intervals in the first direction X and the second direction Y. It will be done. Of the transfer areas A11 to A33 in 3 rows and 3 columns of the display panel 1p, in the transfer areas A21, A22, A23, and A32, the connection pads 13 and the light emitting elements 3 are transferred to positions shifted by a distance ΔX in the first direction X. is transferred by a stamp for mass transfer mounting processing. Further, in the transfer areas A11, A12, A13, A31, and A33 other than the above-mentioned transfer areas A21, A22, A23, and A32, the light emitting element 3 is transferred only once by the stamp. Each pair of light emitting elements 3 superimposed and transferred in A21, A22, A23, and A32 is mounted as a so-called redundant element in which only one is lit and the other is not. Each pair of light emitting elements 3 in the above-mentioned transfer areas A21, A22, A23, and A32, which are transferred in an overlapping manner, are transferred without changing their direction.

Each pair of light emitting elements 3 in the transfer areas A21, A22, A23, and A32 may be set to be lit regularly and/or irregularly. As shown in FIG. 3, when lighting is set regularly, one (for example, the left) light emitting element 3 of a certain pair emits light, and the light emitting element 3 adjacent to a certain pair of light emitting elements 3 emits light. In the pair of light emitting elements 3, the other (for example, the right side) light emitting element 3 may emit light. That is, each pair of light emitting elements 3 may be lit alternately. In this case, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized. Further, when a plurality of pairs of light emitting elements 3 are set as group A, and a plurality of pairs of light emitting elements 3 adjacent to group A are set as group B, group A causes one (for example, the left side) light emitting element 3 to emit light, In group B, the other (for example, right side) light emitting element 3 may be made to emit light. That is, each of the plurality of pairs of light emitting elements 3 may be lit alternately. In this case as well, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized.

When each pair of light emitting elements 3 in the transfer areas A21, A22, A23, and A32 is set to be turned on irregularly, for example, the pair of light emitting elements 3 in the transfer areas A21, A22, A23, and A32 are set to be turned on by pseudo-random numbers using a pseudo-random number generation program. You may also set which way to emit light for each. In this case as well, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized.

For each pair of light emitting elements 3 in the transfer areas A21, A22, A23, and A32, there is a mixture of a group in which the lighting is set regularly and a group in which the lighting is set irregularly. You can leave it there. In this case as well, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized.

FIG. 5 is a front view showing the light emitting element wafer. FIG. 6 is an enlarged view of section VI of FIG. The light emitting element wafer 11 is a semiconductor wafer on which a large number of light emitting elements 3 are formed by etching or the like. A large number of light emitting elements 3 can be individually removed from a semiconductor wafer using a stamp or the like having an adhesive part or a suction part. The above-mentioned steps are required to transfer from the light emitting element wafer 11 on which a large number of fine light emitting elements 3 such as micro LEDs are formed to the substrate for the light emitting device 1 (hereinafter also referred to as "light emitting substrate") by mass transfer mounting processing. stamps are used. The stamp may be made of the silicone elastomer polydimethylsiloxane (PDMS), for example. The stamp has a plate-shaped base layer and a plurality of protrusions, also called pillars, patterned on one or both surfaces of the base layer. The plurality of protrusions are formed to correspond to the pattern of the light emitting elements 3 formed on the light emitting element wafer 11. In order to selectively remove a large number of fine light emitting elements 3 from the light emitting element wafer 11, an adhesive that adheres to the light emitting elements 3 is provided at the tip of each protrusion. When the size of the light emitting element wafer 11 is 4 inches, the light emitting element wafer 11 is provided with, for example, several million protrusions of the light emitting elements 3 in a grid pattern.

FIG. 7 is a partially enlarged plan view showing a state in which the light emitting element 3 is mounted on the light emitting substrate. On the first surface of the light emitting substrate 10 used in the light emitting device 1, connection pads 13 for mounting the light emitting elements 3 are provided in a predetermined wiring pattern. In the figure, four light emitting elements 3a, 3b, 3c, and 3d are mounted in the same direction. The light emitting substrate 10 is provided with a positioning mark 12 that indicates the position where the stamp is pressed. By positioning the stamp on the positioning mark 12 and pressing it against the light emitting substrate 10, the light emitting elements 3a, 3b, 3c, and 3d adhered to the protrusions of the stamp are transferred to the light emitting substrate 10. In one pixel P, three light emitting elements 3 of each color of red R, green G, and blue B are arranged in two rows in a redundant structure, and a total of six light emitting elements 3 are mounted. When a micro LED is used as the light emitting element 3, red LEDs include AlGaAs, GaAsP, AlGaInP, GaP for red, and GaP; green LEDs include AlGaInP and AlGaP; and blue LEDs include ZnSe, InGaN. , SiC.

FIG. 8 is a plan view schematically showing the light emitting element wafer 11, and FIG. 9 is an enlarged plan view of section IX in FIG. Several million light emitting elements 3 are formed on one light emitting element wafer 11 . In the figure, six transfer areas A11, A12, A21, A22, A31, and A32 are shown, and the aforementioned positioning marks 12 are provided at the four corners of each transfer area A11 to A32. The stamp pitch in the first direction X of one stamp is L1, the stamp pitch in the second direction Y is L2, the element pitch of the light emitting element 3 in the first direction be. At this time, a plurality of light emitting elements 3 can be removed from the light emitting element wafer 11 in the same direction for each of the transfer areas A11 to A32 and transferred to the light emitting substrate 10.

For example, when taking out a plurality of light emitting elements 3 in the direction along the first direction X in the transfer area A21, the process is performed as follows. For simplification, the number of light emitting elements 3a transferred to the first transfer area A1 is assumed to be four (LD1a, LD1b, LD1c, LD1d), and the number of light emitting elements 3b transferred to the second transfer area A2 is assumed to be four (LD2a, LD1d). LD2b, LD2c, LD2d). That is, the four light emitting elements 3a (LD1a, LD1b, LD1c, LD1d) and the four light emitting elements 3b (LD2a, LD2b, LD2c, LD2d) are arranged in a direction along the first direction X (+X direction: FIG. (in the right direction), it is shifted by one light emitting element 3 at a time. In this case, the distribution state of the light emission characteristics of the four light emitting elements 3a (LD1a, LD1b, LD1c, LD1d) and the distribution state of the light emission characteristics of the four light emitting elements 3b (LD2a, LD2b, LD2c, LD2d) are as follows. As shown in FIGS. 12 and 13, they are almost the same. Then, the four light emitting elements 3a (LD1a, LD1b, LD1c, LD1d) are arranged in the first transfer area A1 on the base 2 while maintaining the arrangement state when taken out, and the four light emitting elements 3b (LD2a , LD2b, LD2c, LD2d) are placed in the second transfer area A2 on the base 2 while retaining the arrangement state when taken out, the distribution state of specific light emission characteristics can be easily recognized, and the distribution state between adjacent regions can be easily recognized. The border becomes easier to see.

The light emitting device of the present disclosure has a plurality of second light emitting elements 3b (LD2a, LD2b, LD2c, LD2d) mounted in the second transfer area A2 in one direction (for example, first direction X) from the light emitting element wafer. It is taken out along a different direction (for example, second direction Y) and placed in the second transfer area A2 on the substrate 2 while maintaining the arrangement state when taken out. Further, the light emitting device of the present disclosure has a plurality of second light emitting elements 3b (LD2a, LD2b, LD2c, LD2d) is placed in the second transfer area A2 on the substrate 2. In these cases, after the transfer, in one direction (for example, the first direction 3b (LD2a, LD2b, LD2c, LD2d) is different from the distribution state of the light emission characteristics. Therefore, it is possible to prevent the distribution state of a specific light emitting characteristic from being visually recognized, and it is also possible to prevent the boundary between adjacent regions from being visually recognized.

FIG. 10A is a diagram showing a process of picking up a light emitting element using a stamp for mass transfer mounting, and FIG. 10B is a diagram showing a process of mounting a light emitting element 3 onto a light emitting board using a stamp ST. FIG. 11 is an enlarged plan view of a portion of the light emitting element wafer 11. As shown in FIG. In the area where the light emitting element 3 has been removed by the stamp ST, the residue of the adhesive that adhered the light emitting element 3 is exposed, as indicated by reference numeral C1. Furthermore, in the removal area indicated by reference numeral C2, it can be seen from the shape of the residue that the light emitting element 3 has been removed, as indicated by arrow C3.

FIG. 12 is a schematic plan view of the light emitting element wafer 11 for checking brightness unevenness of the light emitting element wafer 11, and an enlarged plan view of a part thereof. FIG. 13 is a schematic plan view of the light emitting element wafer 11 for checking color unevenness of the light emitting element wafer 11, and an enlarged plan view of a part thereof. When the light emitting elements 3 for transfer formed on the surface of the light emitting element wafer 11 were turned on, it was confirmed that there were uneven brightness and color (wavelength) as shown in FIGS. 12 and 13. When there is such uneven brightness and color, when the light emitting element 3 is mounted on the light emitting substrate 10, the boundary line between the transfer areas A11 to A33 becomes recognizable as described above, and it is confirmed that the display quality deteriorates. It was done.

FIG. 14 is a schematic plan view of the light emitting element wafer 11 for checking brightness unevenness, and FIG. 15 is a schematic plan view of the light emitting element wafer 11 for checking color unevenness. When the light emitting elements 3 of the light emitting element wafer 11 were irradiated with excitation light to cause the light emitting elements 3 to emit light, it was found that there was uneven brightness as shown in FIG. Further, when a driving voltage was applied to the light emitting elements 3 of the light emitting element wafer 11 to cause the light emitting elements to emit light, it was found that there was wavelength (color) unevenness as shown in FIG. When a large number of light emitting elements 3 in the area indicated by reference numeral F are picked up from such a light emitting element wafer 11 by the stamp ST and transferred onto the light emitting substrate 10 without changing the orientation, the large number of light emitting elements 3 after transfer also have uneven brightness. and wavelength unevenness will occur.

The reason why such brightness unevenness and color (wavelength) unevenness occurs is considered to be due to the following reasons. For example, when forming a PN junction structure in which a GaAs active layer is sandwiched between GaAlAs cladding layers on a GaAs wafer substrate by a vapor phase growth method such as a metal organic chemical vapor deposition (MOCVD) method, This is due to unevenness in the content distribution (unevenness) of the components of the active layer and cladding layer within the plane of the wafer substrate.

FIG. 16 is a plan view of the light-emitting substrate 10 showing a state in which a plurality of light-emitting elements 3 have been transferred from the light-emitting element wafer 11 to the transfer area of the light-emitting substrate 10 without changing the orientation by the stamp ST. FIG. 17 shows a process of picking up a plurality of light emitting elements 3 with the stamp ST and mounting them as they are (a process of mounting without rotating the stamp ST by 180 degrees) (also referred to as a non-rotating mounting process), and a process of picking up a plurality of light emitting elements 3 with the stamp ST. FIG. 3 is a plan view schematically showing a mounted state of a light emitting substrate 10 produced by alternately repeating a process of picking up an element 3 and mounting it by rotating a stamp ST by 180 degrees (also referred to as a rotation mounting process). For example, in FIG. 17, a large number of light emitting elements 3 indicated by upward reference numeral F are mounted by a non-rotating mounting process, and a large number of light emitting elements 3 indicated by downward reference numeral F are mounted by a rotational mounting process. Implemented.

One pixel consists of three light emitting elements 3 (R, G, B light emitting elements 3) indicated by an upward reference symbol F, and three light emitting elements 3 (R, G, B light emitting elements 3) indicated by a downward reference symbol F. A light emitting element 3). Redundancy in which one of the set of three light emitting elements 3 indicated by the upward reference symbol F and the set of three light emitting elements 3 indicated by the downward reference symbol F is used for constant lighting, and the other is used as a backup. Structure. Further, the sets of light emitting elements 3 that emit light may be different between adjacent pixels.

When the light emitting element that generates red light is 3R, the light emitting element that generates green light is 3G, and the light emitting element that generates blue light is 3B, the plurality of transfer areas A11, A12, A13, A14, A21, A22 , A23, A24, A31, A32, A33, A34, A41, A42, A43, A44, respectively, have light emitting elements 3R, 3G, 3B indicated by an upward reference mark F, and light emitting elements 3R, 3G, 3B indicated by a downward reference mark F. The light emitting elements 3R, 3G, and 3B are inverted by 180 degrees. The redundant circuit controls one of the two light emitting elements 3 to emit light for each color RGB in each of the transfer areas A11 to A44, and the other of the two light emitting elements 3 to not emit light.

FIG. 18A is an enlarged photograph showing the luminance distribution when a boundary line between mounting areas (between stamps ST) is displayed when a large number of light emitting elements 3 are mounted by a non-rotating mounting process. FIG. 18B is an enlarged photograph showing the luminance distribution when a large number of light emitting elements are mounted by rotating the stamp ST, that is, when a large number of light emitting elements 3 are mounted by a rotational mounting process. In each mounting area, when a large number of light emitting elements 3 are mounted in the same direction without rotating the stamp ST, a boundary line is clearly displayed as indicated by reference numeral m1 in FIG. 18A. On the other hand, when half of the light emitting elements 3 are rotated by 180 degrees and mounted using the stamp ST as shown in FIG. 17, the boundary line can hardly be discerned, as indicated by reference numeral m2 in FIG. 18B. It was confirmed.

The above effects are due to the following configuration. That is, the light emitting element 3 in the first region (the light emitting element 3 indicated by the upward reference symbol F) and the light emitting element 3 in the second region (the light emitting element 3 indicated by the downward reference symbol F) have light emission characteristics. The distribution state is different. This is because the light emitting elements 3 in the second region are mounted by a rotational mounting process. Further, the first region and the second region are configured to overlap with each other while being shifted in a predetermined direction. With this configuration, a large number of light emitting elements 3 having different distribution states of light emitting characteristics coexist in one mounting area. The length of the shift in the predetermined direction may be approximately one to three pixels, but is not limited to this range.

FIG. 18C is a graph showing the brightness distribution at the detection position A-A' in FIGS. 18A and 18B. The symbol ● in FIG. 18C indicates the brightness when mounted in a rotational manner as in FIG. 18B, and the symbol ▲ in FIG. 18C indicates the luminance when mounted in the same direction as in FIG. 18A. It can be seen that when the light emitting elements 3 are mounted in rotation, the maximum brightness difference is 3%, whereas when the light emitting elements 3 are mounted in the same direction, the maximum brightness difference is as large as 17%.

The brightness and wavelength of the light emitting element 3 can be measured using a measuring instrument that can measure the brightness and wavelength for each chip. As a measuring device, for example, a spectral radiance meter SR-5000 manufactured by Topcon Corporation can be used. Such a measuring device can measure the brightness and wavelength of all the light emitting elements 3 mounted on the light emitting substrate 10.

FIG. 19A is an enlarged photograph showing the distribution of wavelengths (colors) with boundary lines between mounting areas displayed. FIG. 19B is an enlarged photograph showing the wavelength distribution when a large number of light emitting elements are mounted by a rotational mounting process. When a large number of light emitting elements 3 are mounted by a non-rotating mounting process, a boundary line is clearly displayed as indicated by reference numeral m3 in FIG. 19A. On the other hand, in each transfer area, if half of the light emitting elements 3 are transfer-mounted without rotating the stamp ST, and the remaining light-emitting elements 3 are transfer-mounted by rotating the stamp ST by 180 degrees, the reference numerals in FIG. 19B As shown in m4, it was confirmed that the border line display was relaxed.

FIG. 19C is a graph showing the wavelength distribution at detection position B-B' in FIGS. 19A and 19B. The symbol ● in FIG. 19C indicates the wavelength when mounted in a rotational manner as in FIG. 19B, and the symbol ▲ in FIG. 19C indicates a wavelength when mounted in the same direction as in FIG. 19A. It can be seen that when the light emitting elements 3 are mounted in rotation, the maximum wavelength difference is 2.3 nm, whereas when the light emitting elements 3 are mounted in the same direction, the maximum wavelength difference is as large as 4.0 nm.

FIG. 20 is a partial plan view showing an example of a mounting form of the light emitting device 1 of the present disclosure. FIG. 21 is a sectional view taken along the section line C1-C2 in FIG. 20. In this embodiment, a case where the drive transistor is an n-channel TFT will be described. The drive transistor may be a p-channel TFT.

The light emitting device 1 of this embodiment includes an insulating substrate 22, a drive transistor 23, a power terminal 40, an anode electrode wiring 25, a cathode electrode wiring 26, and a light emitting element 3.

The insulating base 22 has a first surface 122a and a second surface 122b, which is the other main surface opposite to the first surface 122a. The insulating base 22 may have a rectangular shape including a triangular shape, a square shape, a rectangular shape, a trapezoidal shape, a hexagonal shape, a circular shape, an elliptical shape, or other shapes. The insulating base 22 may have a single-layer structure consisting of a single insulating layer, or may have a laminated structure in which a plurality of insulating layers are laminated.

In this embodiment, the insulating base 22 has a laminated structure in which a plurality of insulating layers 22a, 22b, and 22c are laminated, as shown in FIG. The insulating layers 22a, 22b, and 22c may be composed of, for example, an inorganic insulating layer such as silicon oxide (SiO ₂ ) or silicon nitride (Si ₃ N ₄ ), or an organic insulating layer such as acrylic resin, polyimide resin, or polycarbonate resin. good. For example, the insulating layers 22a and 22b on the lower side (substrate 7 side) of the insulating base 22 may be inorganic insulating layers, and the insulating layer 22c on the upper side of the insulating base 22 is thicker than the insulating layers 22a and 22b. An organic insulating layer may be used as a planarization layer. The insulating layers 22a, 22b, 22c may have the same composition, dimensions (thickness), etc., or may differ from each other.

The insulating base 22 has internal wirings 24a to 24c. The internal wirings 24a to 24c electrically connect the drive transistor 23, the power supply terminal 40, the anode electrode wiring 25, the cathode electrode wiring 26, the light emitting element 3, etc. to each other. The internal wirings 24a to 24c may be located, for example, between adjacent insulating layers 22a, 22b, and 22c. The internal wirings 24a to 24c may be made of Mo/Al/Mo, MoNd/AlNd/MoNd, or the like. Here, Mo/Al/Mo indicates a stacked structure in which an Al layer is stacked on a Mo layer, and a Mo layer is stacked on an Al layer. The same applies to others.

The insulating base 22 has an anode electrode wiring 25 and a cathode electrode wiring 26. The anode electrode wiring 25 electrically connects the internal wiring 24c and the anode terminal 61 of the light emitting element 3. The cathode electrode wiring 26 electrically connects the internal wiring 24b and the cathode terminal 62 of the light emitting element 3. The anode electrode wiring 25 and the cathode electrode wiring 26 may be located on the second surface 2b, or may be located between adjacent insulating layers 22a, 22b, and 22c. The anode electrode wiring 25 may be directly connected to the anode terminal 61, or may be connected to the anode terminal 61 via the transparent conductive layer 25a. The cathode electrode wiring 26 may be directly connected to the cathode terminal 62, or may be connected to the cathode terminal 62 via the transparent conductive layer 26a. FIG. 21 shows an example in which the anode electrode wiring 25 is connected to the anode terminal 61 through the transparent conductive layer 25a, and the cathode electrode wiring 26 is connected to the cathode terminal 62 through the transparent conductive layer 26a. The transparent conductive layers 25a and 26a may be made of a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO).

The light emitting device 1 may be located on the substrate 7, as shown in FIG. 21, for example. The substrate 7 has a third surface 7a, a fourth surface 7b opposite to the third surface 7a, and a fifth surface (side surface) connecting the third surface 7a and the fourth surface 7b. The light emitting device 1 may be positioned on the substrate 7 such that the first surface 122a of the insulating base 22 faces the third surface 7a of the substrate 7.

The substrate 7 may be made of glass material, ceramic material, or resin material. Examples of the glass material used for the substrate 7 include borosilicate glass, crystallized glass, and quartz. Ceramic materials used for the substrate 7 include alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), silicon nitride (Si ₃ N ₄ ), silicon carbide (SiC), aluminum nitride (AlN), and the like. Examples of the resin material used for the substrate 7 include epoxy resin, polyimide resin, polyamide resin, acrylic resin, and polycarbonate resin.

The substrate 7 may be made of a metal material, an alloy material, a semiconductor material, or the like. Metal materials used for the substrate 7 include aluminum (Al), magnesium (Mg) (especially high-purity magnesium with a purity of 99.95% or more), zinc (Zn), tin (Sn), copper (C), Examples include chromium (Cr) and nickel (Ni). The alloy materials used for the substrate 7 include duralumin (Al-Cu alloy, Al-Cu-Mg alloy, Al-Zn alloy, Mg-Cu alloy), which is an aluminum alloy containing aluminum as the main component, and magnesium as the main component. Examples include magnesium alloys (Mg-Al alloy, Mg-Zn alloy, Mg-Al-Zn alloy), titanium boronide, stainless steel, Cu-Zn alloy, etc. Semiconductor materials used for the substrate 7 include silicon (Si), germanium (Ge), gallium arsenide (GaAs), gallium nitride (GaN), and the like.

When the substrate 7 is made of a metal material, an alloy material, or a semiconductor material, an insulating layer made of silicon oxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), etc. is provided between the drive transistor 23 and the substrate 7. May be mediated.

The drive transistor 23 is located inside the insulating base 22 or on the first surface 122a of the insulating base 22. The drive transistor 23 controls the light emission operation (light emission, non-light emission, and light emission intensity) of the light emitting element 3. The drive transistor 23 may be, for example, a thin film transistor such as a thin film transistor (TFT). The drive transistor 23 may have a semiconductor film (also referred to as a channel) made of amorphous silicon (a-Si), low-temperature poly silicon (LTPS), or the like. The drive transistor 23 may have a configuration having three terminals: a gate electrode 31, a source electrode 32, and a drain electrode 33. The drive transistor 23 switches conduction (ON) and non-conduction (OFF) between the source electrode 32 and the drain electrode 33 according to the voltage applied to the gate electrode 31, and also controls the source-drain current. do.

In the following, a case will be described in which the drive transistor 23 is a TFT having a semiconductor film (channel), a gate electrode 21, a source electrode 32, and a drain electrode 33. The drive transistor 23 may be an n-channel TFT or a p-channel TFT.

The power supply terminal 40 is connected to an external power supply, and a power supply voltage is applied to the power supply terminal 40. The power terminal 40 may be located inside the insulating base 22 or on the second surface 122b of the insulating base 22, or may be located on the third surface 7a of the substrate 7. A plurality of power supply terminals 40 may be provided. The power terminal 40 may have one or more first power terminals 41 and one or more second power terminals 42. A first power supply voltage VDD is applied to the first power supply terminal 41, and a second power supply voltage VSS lower than the first power supply voltage VDD is applied to the second power supply terminal 42. The first power supply voltage VDD and the second power supply voltage VSS are determined in advance according to the type of light emitting element 3. The power supply terminal 40 may be made of Al, AL/Ti, Ti/Al/Ti, Mo/Al/Mo, MoNd/AlNd/MoNd, Cu, Cr, Ni, Ag, or the like.

The power supply terminal 40 does not have to have an island-like shape, and may be the end of a wiring or the end of a penetrating conductor such as a through hole.

The connection conductor layer 51 connects the source electrode 32 of the drive transistor 23 and the power supply terminal 40. The connection conductor layer 51 can supply a power supply voltage to the source electrode 32 of the drive transistor 23 . The connection conductor layer 51 may be located on the second surface 122b or between adjacent insulating layers 22a, 22b, and 22c. A portion of the connection conductor layer 51 may be located on the second surface 122b, and another portion may be located between adjacent insulating layers 22a, 22b, and 22c. The connection conductor layer 51 may be made of a transparent conductor such as ITO or IZO.

The light emitting element 3 is located on the second surface 122b of the insulating base 22. The light emitting element 3 may be any self-luminous element such as a light emitting diode (LED) element or a semiconductor laser (laser diode: LD) element. In this embodiment, an LED element is used as the light emitting element 3, but a micro light emitting diode (μLED) element may also be used. In this case, the light-emitting element 3 has a rectangular shape with a side length of about 1 μm or more and about 100 μm or less, or about 5 μm or more and about 20 μm or less, when viewed from the direction perpendicular to the light emitting element 3 (upper direction in FIG. 21). Good too. When the light emitting element 3 is a μLED element, the first power supply voltage VDD may be, for example, about 10V to 15V, and the second power supply voltage VSS may be, for example, about 0V to 3V.

The light emitting element 3 is a two-terminal element having an anode terminal 61 and a cathode terminal 62. The anode terminal 61 and the cathode terminal 62 are electrically connected to the anode electrode wiring 25 and the cathode electrode wiring 26.

The light emitting device 1 includes a plurality of light emitting elements 3 and a plurality of driving transistors 23 that respectively drive the plurality of light emitting elements 3. The plurality of light emitting elements 3 are located on the second surface 122b and arranged in a matrix.

FIG. 22 is a diagram showing the arrangement state of the light emitting elements 3 when the one-dimensional stamp is shifted in the first direction X and the light emitting elements 3 are mounted. In the first transfer area A1 having a plurality of (six in this embodiment) light emitting elements 3 arranged one-dimensionally, each light emitting element 3 is located at equal intervals ΔL in one direction. In the second transfer area A2, similarly to the first transfer area A1, a plurality of (six in this embodiment) light emitting elements 3 are located at equal intervals ΔL. When a plurality of light emitting elements 3 are transfer-mounted on the second transfer area A2, the stamp ST is transferred and mounted on the light-emitting substrate 10 while being shifted by ΔL/2 in the first direction X with respect to the first transfer area A1. Thereby, it is possible to realize a one-dimensional (line type) light emitting device 1 in which luminance unevenness and wavelength unevenness are suppressed.

The one-dimensional (line type) light-emitting device 1 is, for example, a head for a photosensitive device equipped with a photosensitive drum, a head for a developing device of a portable camera capable of instant development, a head for a printing device of a copying machine, and a head for three-dimensional printing. It can be applied to equipment heads, etc. The light emitting element 3 may emit invisible light such as visible light or ultraviolet light.

In other words, the light emitting device 1 shown in FIG. 22 has the following configuration. Arrangement pitch (ΔLX) of the plurality of light emitting elements 3 belonging to the first area A1 in a predetermined direction (first direction are the same, and the first area A1 and the second area A2 are p/2 times the arrangement pitch (ΔLX) in a predetermined direction of the plurality of light emitting elements 3 belonging to the first area A1 (p is 1 or more). This is a configuration in which they are overlapped with a deviation in a predetermined direction by an amount of deviation (odd number). p may be about 1 to 99, about 1 to 49, or about 1 to 9, but is not limited to these ranges.

FIG. 23 is a plan view of the light emitting substrate 10 showing the arrangement state of the light emitting elements 3 when the two-dimensional stamp is shifted in the first direction X. In the first transfer area A1, a plurality of light emitting elements 3 (in this embodiment, 11×8=88 pieces) arranged two-dimensionally are arranged at equal intervals ΔLX in the first direction X (ΔLX may be an arrangement pitch). ), and are located at equal intervals ΔLY (ΔLY may be an arrangement pitch) in the second direction Y. In the second transfer area A2, similarly to the first transfer area A1, a plurality of (in this embodiment, 11×8=88) light emitting elements 3 are located at equal intervals ΔLX in the first direction X, They are located at equal intervals ΔLY in the second direction Y. When transferring and mounting a plurality of light emitting elements 3 on the second transfer area A2, the two-dimensional stamp is transferred onto the light emitting substrate 10 while being shifted by ΔLX/2 in the first direction X with respect to the first transfer area A1. Thereby, it is possible to realize the light emitting device 1 in which luminance unevenness and wavelength unevenness are suppressed.

In other words, the light emitting device 1 shown in FIG. 23 has the following configuration (also referred to as configuration X). When transferring and mounting a plurality of light emitting elements 3 on the second transfer area A2 by shifting them with respect to the first transfer area A1, the predetermined direction of the shift is the row direction (first direction X). The arrangement pitch (ΔLX) in the row direction of the plurality of light emitting elements 3 belonging to the first area A1 is the same as the arrangement pitch (ΔLX) in the row direction of the plurality of light emitting elements 3 belonging to the second area A2, and The first area A1 and the second area A2 are arranged in rows with a deviation amount of q/2 times (q is an odd number of 1 or more) the arrangement pitch (ΔLX) in the row direction of the plurality of light emitting elements 3 belonging to the first area A1. This is a configuration in which they are overlapped with deviations in the directions. q may be about 1 to 99, about 1 to 49, or about 1 to 9, but is not limited to these ranges.

FIG. 24 is a plan view of the light emitting substrate 10 showing the arrangement of the light emitting elements 3 when the two-dimensional stamp is shifted in the second direction Y. In the first transfer area a1, a plurality of two-dimensionally aligned light emitting elements 3 (in this embodiment, 11×8=88 pieces) are located at equal intervals ΔLX in the first direction X, and in the second direction Y. They are located at equal intervals ΔLY. In the second transfer area A2, similarly to the first transfer area A1, a plurality of (in this embodiment, 11×8=88) light emitting elements 3 are located at equal intervals ΔLX in the first direction X. , are located at equal intervals ΔLY in the second direction Y. When transferring and mounting a plurality of light emitting elements 3 on the second transfer area A2, the two-dimensional stamp is transferred onto the light emitting substrate 10 while being shifted by ΔLY/2 in the second direction Y with respect to the first transfer area A1. Thereby, it is possible to realize the light emitting device 1 in which luminance unevenness and wavelength unevenness are suppressed.

In other words, the light emitting device 1 shown in FIG. 24 has the following configuration (also referred to as configuration Y). When transferring and mounting a plurality of light emitting elements 3 on the second transfer area A2 while shifting them with respect to the first transfer area A1, the predetermined direction of the shift is the column direction (second direction Y). The arrangement pitch (ΔLY) in the column direction of the plurality of light emitting elements 3 belonging to the first area A1 is the same as the arrangement pitch (ΔLY) in the column direction of the plurality of light emitting elements 3 belonging to the second area A2. The first area A1 and the second area A2 are arranged in columns with a deviation amount r/2 times (r is an odd number of 1 or more) the arrangement pitch (ΔLY) in the column direction of the plurality of light emitting elements 3 belonging to the first area A1. This is a configuration in which they are overlapped with deviations in the directions. r may be about 1 to 99, about 1 to 49, or about 1 to 9, but is not limited to these ranges.

FIG. 25 is a plan view of the light emitting substrate 10 showing the arrangement state of the light emitting elements 3 when the two-dimensional stamp is shifted in two directions. A plurality of light emitting elements 3 (in this embodiment, 11×8=88 pieces) arranged two-dimensionally are located at equal intervals ΔLX in the first direction X, and at equal intervals ΔLY in the second direction Y. are doing. In the second transfer area A2, similarly to the first transfer area A1, a plurality of (in this embodiment, 11×8=88) light emitting elements 3 are located at equal intervals ΔLX in the first direction X, They are located at equal intervals ΔLY in the second direction Y. When transferring and mounting a plurality of light emitting elements 3 on the second transfer area A2, the two-dimensional stamp is shifted by ΔLX/2 in the first direction X with respect to the first transfer area A1, and ΔLY/2 in the second direction Y. The light emitting element 3 is transferred onto the light emitting substrate 10 with a shift of 2. Thereby, it is possible to realize the light emitting device 1 in which luminance unevenness and wavelength unevenness are further suppressed.

In other words, the light emitting device 1 shown in FIG. 25 has a configuration including the configurations X and Y described above.

FIG. 26 shows an arrangement state of the light emitting elements 3 when a plurality of light emitting elements 3 are transfer-mounted so that the first transfer area A1 and the third transfer area A3, which is smaller than the first transfer area A1, overlap. , is a plan view of the light emitting substrate 10. With this configuration, for example, in the first transfer area A1, the luminance distribution and/or color distribution (wavelength distribution) of the light emitting element 3 at a portion corresponding to the third transfer area A3 (also referred to as a site where unevenness occurs) is easily visible. It is effective in some cases. That is, when a part of the first transfer area A1 is a site where unevenness occurs, it is possible to suppress the brightness unevenness and color unevenness from being visually recognized at the unevenness occurring site. Therefore, the plurality of light emitting elements 3 located at the unevenness occurrence site in the first transfer area A1 do not emit light, and the plurality of light emitting elements 3 located in the third transfer area A3 emit light.

In each of the above embodiments, the case where the second transfer area A2 is shifted only in the first direction X with respect to the first transfer area A1, or the case where it is shifted in the first direction X and the second direction Y has been described. In other embodiments of the present invention, the second transfer area A2 may be rotated by 90 degrees, 180 degrees, or 270 degrees with respect to the first transfer area A1 before being transferred. Even after rotation, the distance between each light emitting element 3 in the first transfer area A1 and each light emitting element 3 in the second transfer area A2 is transferred as designed. Thereby, uneven brightness and wavelength unevenness of the light emitting element 3 can be suppressed.

In the above-described embodiment, a micro LED was exemplified as an element to be transferred to the mounting board, but other elements other than the micro LED may be transferred to the mounting board. For example, the element is a component used in an electronic circuit, and may be a chip such as a MEMS, a semiconductor element, a resistor, or a capacitor. Semiconductor elements include discrete semiconductors such as transistors, diodes, LEDs, and thyristors, and integrated circuits such as ICs and LSIs. LEDs include mini LEDs and the like. The thickness of the element may be 100 μm or less.

The method for manufacturing a light emitting device of the present disclosure includes the following configuration. A first step of taking out a plurality of first light emitting elements from a light emitting element wafer 11 (semiconductor wafer) along one direction, maintaining the arrangement state when taken out, and arranging them in a first area on the light emitting substrate 10. Then, a plurality of second light emitting elements are taken out from the light emitting element wafer 11 along a direction different from the above-mentioned one direction, and a plurality of second light emitting elements are placed in a second area on the light emitting substrate 10 while maintaining the arrangement state when taken out. 2 steps. Then, in the second step, a plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap with each other while being shifted in a predetermined direction.

With the above configuration, the light emitting device 1 shown in FIGS. 22 to 26 can be manufactured. That is, the plurality of light emitting elements 3a belonging to the first transfer area A1 and the plurality of light emitting elements 3b belonging to the second transfer area A2 have different distribution states of light emitting characteristics, and the plurality of light emitting elements 3a belonging to the first transfer area A1 have different distribution states of light emitting characteristics. The configuration is such that most of the elements 3a and most of the plurality of light emitting elements 3b belonging to the second transfer area A2 coexist. As a result, it is possible to effectively prevent the distribution state of specific light emitting characteristics from being visually recognized. Further, it is also possible to effectively prevent the boundaries between adjacent regions from being visually recognized.

Furthermore, the method for manufacturing a light emitting device of the present disclosure includes the following configuration. a first step of taking out the plurality of first light emitting elements from the light emitting element wafer 11 along one direction, maintaining the arrangement state when taken out, and arranging them in a first region on the light emitting substrate 10; A second step of taking out the second light emitting element from the light emitting element wafer 11 along the above-mentioned one direction and arranging it in a second region on the light emitting substrate 10 while maintaining the arrangement state when taken out. In the second step, the first region and the second region are rotated at a predetermined rotation angle with respect to the first region, and the first region and the second region are shifted in a predetermined direction. A plurality of second light emitting elements are arranged in the second region so that the second regions overlap. The predetermined rotation angle may be 90°, 180°, or 270°. With this configuration, the light emitting device 1 shown in FIGS. 22 to 26 can be manufactured.

Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various changes, improvements, etc. can be made without departing from the gist of the present invention. It is possible. It goes without saying that all or part of the above embodiments can be combined as appropriate to the extent that they do not contradict each other.

The present disclosure can be implemented in the following aspects (1) to (18).
(1) A base body;
a plurality of light emitting elements located on the base and arranged along a predetermined direction,
Some of the plurality of light emitting elements constitute a first region,
Another part of the plurality of light emitting elements constitutes a second region,
The light emitting device in the first region and the light emitting device in the second region have different distribution states of light emitting characteristics,
The light emitting device, wherein the first region and the second region overlap with each other while being shifted in the predetermined direction.

(2) The light emitting device according to aspect (1), wherein the light emitting elements in the first region and the light emitting elements in the second region are alternately located along the predetermined direction. .

(3) The light emitting element in the first region and the light emitting element in the second region are taken out in different directions from one semiconductor wafer and maintain the arrangement state when taken out. The light emitting device according to aspect (1) or (2) above.

(4) The light emitting elements in the first area and the light emitting elements in the second area are taken out along one direction from one semiconductor wafer and maintain the arrangement state when taken out. and
The light emitting device according to aspect (1) or (2), wherein the first region and the second region overlap with each other with the second region rotated by 180 degrees with respect to the first region.

(5) The light emitting device according to any one of aspects (1) to (4) above, wherein the light emission characteristic includes at least one of brightness and emission wavelength.

(6) the arrangement pitch in the predetermined direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the predetermined direction of the plurality of light emitting elements belonging to the second region;
The first region and the second region have a deviation amount of p/2 times (p is an odd number of 1 or more) the arrangement pitch of the plurality of light emitting elements belonging to the first region in the predetermined direction. The light emitting device according to any one of aspects (1) to (5) above, which overlap in a state shifted in a predetermined direction.

(7) a base;
a plurality of light emitting elements located on the base and arranged in a matrix,
A part of the plurality of light emitting elements constitutes a first region, and another part of the plurality of light emitting elements forms a second region,
The light emitting element in the first region and the light emitting element in the second region have different distribution states of light emitting characteristics,
The first region and the second region overlap each other in a predetermined direction.

(8) The light emitting device according to the above aspect (7), wherein the light emitting device in the first region and the light emitting device in the second region are arranged alternately and in a matrix as a whole. Device.

(9) The light emitting element in the first region and the light emitting element in the second region are taken out from different parts of one semiconductor wafer and maintain the arrangement state when taken out. The light emitting device according to aspect (7) or (8) above.

(10) The light emitting element in the first region and the light emitting element in the second region are taken out along the same arrangement direction from a predetermined part of one semiconductor wafer, and the arrangement state when taken out. It holds
The light emitting device according to aspect (7) or (8), wherein the first region and the second region overlap with each other with the second region rotated at a predetermined rotation angle with respect to the first region. .

(11) The light emitting device according to (10), wherein the predetermined rotation angle is 90°, 180°, or 270°.

(12) The light emitting device according to any one of aspects (7) to (11), wherein the light emitting property includes at least one of brightness and light emission wavelength.

(13) The light emitting device according to any one of aspects (7) to (12), wherein the predetermined direction is a row direction and/or a column direction.

(14) the predetermined direction is the row direction;
The arrangement pitch in the row direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the row direction of the plurality of light emitting elements belonging to the second region,
The first region and the second region are arranged in the row with a shift amount of q/2 times the arrangement pitch in the row direction of the plurality of light emitting elements belonging to the first region (q is an odd number of 1 or more). The light emitting device according to the above aspect (13), wherein the light emitting devices overlap in a direction shifted from each other.

(15) the predetermined direction is the column direction;
The arrangement pitch in the column direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the column direction of the plurality of light emitting elements belonging to the second region,
The first region and the second region are arranged so that the plurality of light emitting elements belonging to the first region are separated from each other in the row by r/2 times the arrangement pitch in the row direction (r is an odd number of 1 or more). The light emitting devices according to the above aspect (13) or (14), which overlap in a state shifted in the direction.

(16) a first step of taking out the plurality of first light emitting elements from the semiconductor wafer along one direction, maintaining the arrangement state when taken out, and placing them in a first region on the base;
a second step of taking out a plurality of second light emitting elements from the semiconductor wafer along a direction different from the one direction, maintaining the arrangement state when taken out, and placing them in a second region on the base; Equipped with
In the second step, the plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap in a predetermined direction.

(17) a first step of taking out the plurality of first light emitting elements from the semiconductor wafer along one direction, maintaining the arrangement state when taken out, and placing them in a first region on the base;
a second step of taking out a plurality of second light emitting elements from the semiconductor wafer along the one direction, maintaining the arrangement state when taken out, and placing them in a second region on the base;
In the second step, the second region is rotated at a predetermined rotation angle with respect to the first region, and the first region and the second region are shifted in a predetermined direction; A method for manufacturing a light emitting device, wherein the plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap.

(18) The method for manufacturing a light emitting device according to aspect (17), wherein the predetermined rotation angle is 90°, 180°, or 270°.

According to the light emitting device of the present disclosure, it is possible to provide a light emitting device in which variations in brightness and color tone are suppressed.

1 Light-emitting device 2 Base 3, 3a, 3b, 3c, 3d Light-emitting element 7 Substrate 9, 9a, 9b Small area on the boundary line 10 Substrate 11 Light-emitting element wafer 12 Positioning mark 13 Connection pad 22 Insulating base 23 Drive transistor 25 Connection conductor 22 Insulating base 22a, 22b, 22c Insulating layer 23 Drive transistor 24a-24c Internal wiring 24a-24c Anode electrode wiring 25a Transparent conductive layer 26 Cathode electrode wiring 26a Transparent conductive layer 31 Anode terminal 32 Source electrode 32 Cathode terminal 40 Power supply terminal 41 First Power supply terminal 41 Second power supply terminal 42 First power supply voltage 51 Connection conductor layer 61 Anode terminal 62 Cathode terminal 122a First surface 122B Second surface A1 First area A2 Second area A2 Distance C2 Removal area L1 Stamp in first direction X Pitch L2 Stamp pitch in second direction Y L3 Element pitch in first direction X L4 Element pitch in second direction Y ST Stamp X First direction Y Second direction VSS Second power supply voltage ΔX, ΔY Distance

Claims (18)

1. A base body;
   a plurality of light emitting elements located on the base and arranged along a predetermined direction,
   Some of the plurality of light emitting elements constitute a first region,
   Another part of the plurality of light emitting elements constitutes a second region,
   The light emitting device in the first region and the light emitting device in the second region have different distribution states of light emitting characteristics,
   The light emitting device, wherein the first region and the second region overlap with each other while being shifted in the predetermined direction.
2. The light emitting device according to claim 1, wherein the light emitting elements in the first region and the light emitting elements in the second region are alternately located along the predetermined direction.
3. 1 . The light emitting device in the first region and the light emitting device in the second region are taken out in different directions from one semiconductor wafer and maintain the arrangement state when taken out. Or the light emitting device according to 2.
4. The light emitting element in the first region and the light emitting element in the second region are taken out along one direction from one semiconductor wafer and maintain the arrangement state when taken out,
   The light emitting device according to claim 1 or 2, wherein the first region and the second region overlap with each other with the second region rotated by 180 degrees with respect to the first region.
5. The light emitting device according to any one of claims 1 to 4, wherein the light emitting characteristics include at least one of brightness and light emission wavelength.
6. The arrangement pitch in the predetermined direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the predetermined direction of the plurality of light emitting elements belonging to the second region,
   The first region and the second region have a deviation amount of p/2 times (p is an odd number of 1 or more) the arrangement pitch of the plurality of light emitting elements belonging to the first region in the predetermined direction. The light emitting device according to claim 1, wherein the light emitting devices overlap in a predetermined direction.
7. A base body;
   a plurality of light emitting elements located on the base and arranged in a matrix,
   A part of the plurality of light emitting elements constitutes a first region, and another part of the plurality of light emitting elements forms a second region,
   The light emitting element in the first region and the light emitting element in the second region have different distribution states of light emitting characteristics,
   The first region and the second region overlap each other in a predetermined direction.
8. The light emitting device according to claim 7, wherein the light emitting elements in the first region and the light emitting elements in the second region are alternately located and arranged in a matrix as a whole.
9. 7. The light emitting element in the first region and the light emitting element in the second region are taken out from different parts of one semiconductor wafer and maintain the arrangement state when taken out. or 8. The light emitting device according to 8.
10. The light emitting device in the first region and the light emitting device in the second region are taken out along the same arrangement direction from a predetermined portion of one semiconductor wafer, and maintain the arrangement state when taken out. and
    The light emitting device according to claim 7 or 8, wherein the first region and the second region overlap with each other with the second region rotated at a predetermined rotation angle with respect to the first region.
11. The light emitting device according to claim 10, wherein the predetermined rotation angle is 90°, 180°, or 270°.
12. The light emitting device according to any one of claims 7 to 11, wherein the light emitting characteristics include at least one of brightness and light emission wavelength.
13. The light emitting device according to any one of claims 7 to 12, wherein the predetermined direction is a row direction and/or a column direction.
14. The predetermined direction is the row direction,
    The arrangement pitch in the row direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the row direction of the plurality of light emitting elements belonging to the second region,
    The first region and the second region are arranged in the row with a shift amount of q/2 times the arrangement pitch in the row direction of the plurality of light emitting elements belonging to the first region (q is an odd number of 1 or more). 14. The light emitting device according to claim 13, wherein the light emitting devices overlap in a direction shifted state.
15. the predetermined direction is the column direction,
    The arrangement pitch in the column direction of the plurality of light emitting elements belonging to the first region is the same as the arrangement pitch in the column direction of the plurality of light emitting elements belonging to the second region,
    The first region and the second region are arranged so that the plurality of light emitting elements belonging to the first region are separated from each other in the row by r/2 times the arrangement pitch in the row direction (r is an odd number of 1 or more). The light emitting device according to claim 13 or 14, wherein the light emitting devices overlap in a state shifted in a direction.
16. a first step of taking out the plurality of first light emitting elements from the semiconductor wafer along one direction, maintaining the arrangement state when taken out, and placing them in a first region on the base;
    a second step of taking out a plurality of second light emitting elements from the semiconductor wafer along a direction different from the one direction, maintaining the arrangement state when taken out, and placing them in a second region on the base; Equipped with
    In the second step, the plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap in a predetermined direction.
17. a first step of taking out the plurality of first light emitting elements from the semiconductor wafer along one direction, maintaining the arrangement state when taken out, and placing them in a first region on the base;
    a second step of taking out a plurality of second light emitting elements from the semiconductor wafer along the one direction, maintaining the arrangement state when taken out, and placing them in a second region on the base;
    In the second step, the second region is rotated at a predetermined rotation angle with respect to the first region, and the first region and the second region are shifted in a predetermined direction; A method for manufacturing a light emitting device, wherein the plurality of second light emitting elements are arranged in the second region so that the first region and the second region overlap.
18. The method for manufacturing a light emitting device according to claim 17, wherein the predetermined rotation angle is 90°, 180°, or 270°.