WO2023223829A1 - Semiconductor device - Google Patents

Abstract

This semiconductor device comprises a first switch part, a first control element, a mounting part, and first to third wires. The first switch part has a first switching element and a second switching element. The first switching element and the second switching element are electrically connected in parallel to each other. The first switching element has a first electrode. The second switching element has a second electrode and a main surface wiring part. The first wire is joined to the first control element and the main surface wiring part, and the second wire is joined to the main surface wiring part and the first electrode. The third wire is joined to the first control element and the second electrode.

Description

semiconductor equipment

The present disclosure relates to a semiconductor device.

Conventionally, semiconductor devices are known that include switching elements such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors). For example, Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device described in Patent Document 1 is an intelligent power module (hereinafter referred to as "IPM") used for drive control of a motor, for example. The semiconductor device includes a power semiconductor chip as the switching element. The power semiconductor chip is an IGBT, a MOSFET, or the like.

JP 2020-4893 Publication

In a semiconductor device, one switching element is sometimes connected to another switching element in parallel, and these switching elements are operated as one switch section. For example, switching is performed by connecting multiple switching elements in parallel for the purpose of ensuring the permissible current of a semiconductor device, suppressing the voltage and current input to a switching element, or suppressing power loss. let On the other hand, in the semiconductor device described in Patent Document 1, there is still room for improvement when connecting each switching element to another switching element in parallel.

An object of the present disclosure is to provide a semiconductor device that is improved over the conventional semiconductor device. In particular, in view of the above circumstances, an object of the present disclosure is to provide a semiconductor device having a more preferable structure in a configuration in which a plurality of switching elements connected in parallel operate as one switch section.

A semiconductor device provided by one aspect of the present disclosure includes at least one first switch section each including a first switching element and a second switching element; A first control element that inputs a drive signal, a mounting part on which the first switching element and the second switching element are mounted, and a plurality of wires including a first wire, a second wire, and a third wire. . In each of the at least one first switch section, the first switching element and the second switching element are electrically connected in parallel, and the first switching element connects one side of the mounting section in the thickness direction. and a first control electrode disposed on the first main surface; It has a second control electrode arranged on the surface and a main surface wiring section. The first wire is connected to the first control element and the main surface wiring section. The second wire is connected to the main surface wiring section and the first control electrode. The third wire is connected to the first control element and the second control electrode. The first control element is arranged on one side of the first switching element and the second switching element in a first direction perpendicular to the thickness direction. The second switching element is arranged between the first control element and the first switching element in the first direction.

According to the above configuration, it is possible to provide a more preferable structure in a configuration in which a plurality of switching elements connected in parallel to each other operate as one switch section.

FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment. FIG. 2 is a plan view showing the semiconductor device according to the first embodiment. FIG. 3 is a diagram showing the sealing member in imaginary lines in the plan view of FIG. 2. FIG. 4 is a partially enlarged view of FIG. 3. FIG. 5 is a partially enlarged view of FIG. 4. FIG. 6 is a partially enlarged view of FIG. 3. FIG. 7 is a partially enlarged view of FIG. 6. FIG. 8 is a front view showing the semiconductor device according to the first embodiment. FIG. 9 is a side view (right side view) showing the semiconductor device according to the first embodiment. FIG. 10 is a sectional view taken along line XX in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. FIG. 14 is a diagram showing an example of the circuit configuration of the semiconductor device according to the first embodiment. FIG. 15 is a plan view showing the semiconductor device according to the second embodiment, in which the sealing member is shown with imaginary lines. FIG. 16 is a partially enlarged view of FIG. 15. FIG. 17 is a partially enlarged view of FIG. 15. FIG. 18 is a cross-sectional view taken along line XVIII-XVIII in FIG. 15. FIG. 19 is a cross-sectional view taken along line XIX-XIX in FIG. 15. FIG. 20 is a cross-sectional view showing a semiconductor device according to a modification of the second embodiment. FIG. 21 is an enlarged plan view of main parts showing a semiconductor device according to a third embodiment. FIG. 22 is an enlarged plan view of a main part of a semiconductor device according to a third embodiment. FIG. 23 is an enlarged plan view of a main part of a semiconductor device according to a modification of the third embodiment. FIG. 24 is a plan view showing the semiconductor device according to the fourth embodiment, in which the sealing member is shown with imaginary lines. FIG. 25 is a partially enlarged view of FIG. 24. FIG. 26 is a partially enlarged view of FIG. 24. FIG. 27 is a diagram showing an example of the circuit configuration of the semiconductor device according to the fourth embodiment. FIG. 28 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 29 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 30 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 31 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 32 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 33 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section. FIG. 34 is an enlarged plan view of main parts showing another example of the configuration of the main surface wiring section.

Preferred embodiments of the semiconductor device of the present disclosure will be described below with reference to the drawings. Hereinafter, the same or similar components will be denoted by the same reference numerals, and redundant explanation will be omitted. Terms such as "first", "second", "third", etc. in this disclosure are used merely as labels and are not necessarily intended to attach a permutation to those objects.

In the present disclosure, "a thing A is formed on a thing B" and "a thing A is formed on a thing B" mean "a thing A is formed on a thing B" unless otherwise specified. "A is formed directly on something B," and "A thing A is formed on something B, with another thing interposed between them." including. Similarly, "a certain thing A is placed on a certain thing B" and "a certain thing A is placed on a certain thing B" are used as "a certain thing A is placed on a certain thing B" unless otherwise specified. ``It is placed directly on something B,'' and ``A thing A is placed on something B, with another thing interposed between them.'' include. Similarly, "an object A is located on an object B" means, unless otherwise specified, "an object A is in contact with an object B, and an object A is located on an object B". ``Being located on (above) something'' and ``A thing A being located on (above) a thing B while another thing is intervening between the thing A and the thing B.'' Including "thing". In addition, "an object A overlaps an object B when viewed in a certain direction" means, unless otherwise specified, "an object A overlaps all of an object B" and "a certain object A overlaps an object B". This includes "overlapping a part of something B."

1 to 14 show a semiconductor device A1 according to the first embodiment. The semiconductor device A1 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a plurality of leads 3A to 3G, 3Z, a plurality of leads 4A to 4H, 4J to 4N, 4P to 4R, a support substrate 51, and a plurality of The connecting member 6, the sealing member 7, the first control element 8A, the second control element 8B, and a plurality of electronic components 89U, 89V, 89W, etc. are provided. The plurality of connection members 6 include a plurality of wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. Although the application of the semiconductor device A1 is not particularly limited, it is configured as an IPM used for, for example, drive control of a motor.

For convenience of explanation, three mutually orthogonal x, y, and z directions will be referred to. The z direction is the thickness direction of the semiconductor device A1. In the following description, one direction in the z direction is sometimes referred to as upper and the other is referred to as lower. Note that descriptions such as "upper", "lower", "upper", "lower", "upper surface", and "lower surface" indicate the relative positional relationship of each component etc. in the z direction, and do not necessarily refer to the direction of gravity. It is not a term that defines the relationship between Moreover, "planar view" refers to when viewed in the z direction. The x direction is the left-right direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). The y direction is the vertical direction in the plan view of the semiconductor device A1 (see FIGS. 2 and 3). In this embodiment, the x direction is an example of the "second direction" described in the claims, and the y direction is an example of the "first direction" described in the claims. Note that one side in the x direction is referred to as the x1 side in the x direction, and the other side in the x direction is referred to as the x2 side in the x direction. Further, one side in the y direction is referred to as the y1 side in the y direction, and the other side in the y direction is referred to as the y2 side in the y direction. Further, one side in the z direction is referred to as a z1 side in the z direction, and the other side in the z direction is referred to as a z2 side in the z direction.

The plurality of first switch sections 1 and the plurality of second switch sections 2 are elements that perform the electrical functions of the semiconductor device A1. In the semiconductor device A1, as shown in FIG. 14, a three-phase AC inverter circuit is configured by a plurality of first switch sections 1 and a plurality of second switch sections 2.

The plurality of first switch sections 1 include a first arm 1A, a second arm 1B, and a third arm 1C, as shown in FIGS. 3, 4, and 14. As shown in FIG. 4, the first arm 1A, the second arm 1B, and the third arm 1C are arranged along the x direction. The second arm 1B includes each of a plurality of first switch parts 1 (first arm 1A, second arm 1B, and third arm 1C) located between the first arm 1A and the third arm 1C in the x direction. is switched between an on state and an off state according to the first drive signal from the first control element 8A.

Each of the plurality of first switch sections 1 (first arm 1A, second arm 1B, and third arm 1C) has a switching element 11, a switching element 12, and a protection element 13. For convenience of explanation, the switching elements 11 of the first arm 1A, the second arm 1B, and the third arm 1C are respectively referred to as a switching element 11A, a switching element 11B, and a switching element 11C. The switching elements 12 of the first arm 1A, the second arm 1B, and the third arm 1C are respectively referred to as a switching element 12A, a switching element 12B, and a switching element 12C. The protection elements 13 of the arm 1C are respectively referred to as a protection element 13A, a protection element 13B, and a protection element 13C. The switching element 11, switching element 12, and protection element 13 described below are common to each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C) unless otherwise specified. do.

Each of the switching element 11 and the switching element 12 is a power semiconductor element and has a switching function section. The switching element 11 and the switching element 12 are each one of, for example, an IGBT, a bipolar transistor, a MOSFET, and a HEMT (High Electron Mobility Transistor). The switching element 11 and the switching element 12 are different in type from each other. The types of switching elements in the present disclosure are classified according to their structure, such as IGBTs, bipolar transistors, MOSFETs, and HEMTs. As shown in FIG. 14, in the semiconductor device A1, the switching element 11 is an IGBT, and the switching element 12 is a MOSFET. Unlike this example, the switching element 11 may be a MOSFET, and the switching element 12 may be an IGBT. Switching element 11 and switching element 12 are each configured to include a semiconductor material. As the semiconductor material, for example, SiC (silicon carbide), Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride) is used. In the semiconductor device A1, the switching element 11 contains Si as a semiconductor material, and the switching element 12 contains SiC as a semiconductor material. Unlike this example, switching element 11 may contain SiC as a semiconductor material, switching element 12 may contain Si as a semiconductor material, or both switching element 11 and switching element 12 may contain SiC or Si as a semiconductor material. It may contain either. In this embodiment, the switching element 11 is an example of a "first switching element" as set forth in the claims, and the switching element 12 is an example of a "second switching element" as set forth in the claims. .

The switching element 11 has an element main surface 11a and an element back surface 11b, as shown in FIGS. 10 and 12. The element main surface 11a and the element back surface 11b are spaced apart in the z direction. The element main surface 11a faces upward in the z direction (z1 side in the z direction), and the element back surface 11b faces downward in the z direction (z2 side in the z direction). The element main surface 11a and the element back surface 11b are each flat (including the case where they are substantially flat).

The switching element 11 has three electrodes 111, 112, and 113. The electrode 111 is provided on the back surface 11b of the element, and the electrodes 112 and 113 are provided on the main surface 11a of the element. The three electrodes 111, 112, 113 are electrically connected to the switching function section of the switching element 11, respectively. In an example where switching element 11 is an IGBT, electrode 111 is a collector, electrode 112 is an emitter, and electrode 113 is a gate. The switching element 11 performs a switching operation according to a drive signal (first drive signal) input to the electrode 113. The switching operation is an operation in which an on state in which current flows between the two electrodes 111 and 112 and an off state in which no current flows between the two electrodes 111 and 112 are switched. When the switching element 11 is in the on state, a forward current flows from the electrode 111 to the electrode 112. The electrode 113 is an example of a "first control electrode" described in the claims.

The switching element 12 has an element main surface 12a and an element back surface 12b, as shown in FIGS. 11 and 12. The element main surface 12a and the element back surface 12b are spaced apart in the z direction. The element main surface 12a faces upward in the z direction (z1 side in the z direction), and the element back surface 12b faces downward in the z direction (z2 side in the z direction). The element main surface 12a and the element back surface 12b are each flat (including the case where they are substantially flat).

The switching element 12 has three electrodes 121, 122, 123. The electrode 121 is provided on the back surface 12b of the element, and the electrodes 122 and 123 are provided on the main surface 12a of the element. The three electrodes 121, 122, 123 are electrically connected to the switching function section of the switching element 12, respectively. In an example where switching element 12 is a MOSFET, electrode 121 is a drain, electrode 122 is a source, and electrode 123 is a gate. The switching element 12 performs a switching operation in response to a drive signal (first drive signal) input to the electrode 123. The switching operation is an operation in which an on state in which current flows between the two electrodes 121 and 122 and an off state in which no current flows between the two electrodes 121 and 122 are switched. When the switching element 12 is in the on state, a forward current flows from the electrode 121 to the electrode 122. The electrode 123 is an example of a "second control electrode" described in the claims.

As shown in FIGS. 4, 5, and 11, the switching element 12 has a main surface wiring section 125. As shown in FIG. 11, the main surface wiring section 125, like the electrode 123, is provided on the element main surface 12a. The main surface wiring section 125 is not electrically connected to the switching function section of the switching element 12 . In the illustrated example, main surface wiring section 125 has a rectangular shape in plan view. Further, the main surface wiring section 125 is located on the y1 side in the y direction from the center in the y direction on the element main surface 12a. As shown in FIG. 5, the main surface wiring section 125 includes a first pad section 125a, a second pad section 125b, and a connecting section 125c. The first pad portion 125a is a portion to which a wire 61G, which will be described later, is bonded. The second pad portion 125b is a portion to which a wire 62G, which will be described later, is bonded. The first pad section 125a and the second pad section 125b are arranged along the y direction in plan view. The first pad portion 125a is located closer to the y1 side in the y direction than the second pad portion 125b. The first pad section 125a is located closer to the first control element 8A than the second pad section 125b in the y direction. In the illustrated example, the dimension of the first pad section 125a in the x direction and the dimension of the second pad section 125b in the x direction are the same (or substantially the same). The connecting portion 125c connects the first pad portion 125a and the second pad portion 125b. The dimension of the connecting portion 125c in the x direction is the same (or approximately the same) as each dimension of the first pad portion 125a and the second pad portion 125b in the x direction.

In each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 11 and the switching element 12 are electrically connected in parallel. Specifically, electrode 111 (collector) and electrode 121 (drain) are electrically connected, and electrode 112 (emitter) and electrode 122 (source) are electrically connected.

The protection element 13 includes a diode function section. The diode function section operates as a freewheeling diode. In this embodiment, the protection element 13 is, for example, a Schottky barrier diode, but may be another type of diode.

As shown in FIG. 12, the protection element 13 has an element main surface 13a and an element back surface 13b. The element main surface 13a and the element back surface 13b are spaced apart in the z direction. The element main surface 13a faces upward in the z direction (z1 side in the z direction), and the element back surface 13b faces downward in the z direction (z2 side in the z direction). The element main surface 13a and the element back surface 13b are each flat (including the case where they are substantially flat).

The protection element 13 includes two electrodes 131 and 132, as shown in FIG. The electrode 131 is formed on the main surface 13a of the element, and the electrode 132 is formed on the back surface 13b of the element. In the example where the protection element 13 is a diode, the electrode 131 is an anode and the electrode 132 is a cathode.

In each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the protection element 13 is connected in antiparallel to the switching element 11 and the switching element 12. Antiparallel means a state in which the forward currents of the switching elements 11 and 12 and the forward currents of the protection element 13 are connected in parallel so that they are in opposite directions. The electrode 131 (anode) of the protection element 13 is connected to the electrode 112 (emitter) of the switching element 11 and the electrode 122 (source) of the switching element 12, and the electrode 132 (cathode) of the protection element 13 is connected to the electrode 112 (emitter) of the switching element 11 and the electrode 122 (source) of the switching element 12. 111 (collector) and the electrode 121 (drain) of the switching element 12. As a result, when a reverse voltage is applied to the switching element 11 and the switching element 12 in each first switch section 1, a forward current flows through the protection element 13, and the reverse voltage is applied to the switching element 11 and the switching element 12. is reduced.

As understood from FIGS. 10 to 12, switching element 11A, switching element 12A, and protection element 13A are each bonded to lead 3B via conductive bonding material 19. Switching element 11B, switching element 12B, and protection element 13B are each bonded to lead 3C via conductive bonding material 19. The switching element 11C, the switching element 12C, and the protection element 13C are each bonded to the lead 3D via a conductive bonding material 19. These conductive bonding materials 19 are, for example, solder, metal paste, or sintered metal.

As shown in FIG. 4, in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 11, the switching element 12, and the protection element 13 are arranged in a line in the y direction. will be placed in In the illustrated example, in each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 12, the switching element 11 , protection element 13 are arranged in this order. Therefore, the switching element 11 is located between the switching element 12 and the protection element 13 in the y direction. Note that in each of the first switch sections 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the positions of the switching element 11 and the switching element 12 may be opposite. In this case, a main surface wiring section similar to the main surface wiring section 125 is formed in the switching element 11 .

The plurality of second switch sections 2 include a fourth arm 2A, a fifth arm 2B, and a sixth arm 2C. As shown in FIG. 6, the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C are arranged along the x direction. The fifth arm 2B is located between the fourth arm 2A and the sixth arm 2C in the x direction. Each of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) is switched between an on state and an off state according to a second drive signal from a second control element 8B. .

The plurality of second switch parts 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) each have a switching element 21, a switching element 22, and a protection element 23. For convenience of explanation, the switching elements 11 of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C are respectively referred to as a switching element 21A, a switching element 21B, and a switching element 21C. Further, the switching elements 22 of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C are respectively referred to as a switching element 22A, a switching element 22B, and a switching element 22C. The protection elements 23 of the arm 2C are respectively referred to as a protection element 23A, a protection element 23B, and a protection element 23C. This will be explained below. The switching element 21, the switching element 22, and the protection element 23 are common to each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) unless otherwise specified.

The switching element 21 and the switching element 22 are each a power semiconductor element like the switching element 11 and the switching element 12, and each has a switching function section. Each of the switching element 21 and the switching element 22 is, for example, an IGBT, a bipolar transistor, a MOSFET, a HEMT, or the like. The switching element 21 and the switching element 22 are different types. As shown in FIG. 14, in the semiconductor device A1, the switching element 21 is an IGBT, and the switching element 22 is a MOSFET. Unlike this example, the switching element 21 may be a MOSFET, and the switching element 22 may be an IGBT. Switching element 21 and switching element 22 are each configured to include a semiconductor material. As the semiconductor material, for example, SiC (silicon carbide), Si (silicon), GaAs (gallium arsenide), or GaN (gallium nitride) is used. In the semiconductor device A1, the switching element 21 contains Si as a semiconductor material, and the switching element 22 contains SiC as a semiconductor material. Unlike this example, the switching element 21 may contain SiC as a semiconductor material, and the switching element 22 may contain Si as a semiconductor material, or both the switching element 21 and the switching element 22 may contain SiC or Si as a semiconductor material. It may contain either. In the present embodiment, the switching element 21 is an example of a "third switching element" as set forth in the claims, and the switching element 22 is an example of a "fourth switching element" as set forth in the claims. .

As shown in FIGS. 10 and 13, the switching element 21 has an element main surface 21a and an element back surface 21b. The element main surface 21a and the element back surface 21b are spaced apart in the z direction. The element main surface 21a faces upward in the z direction (z1 side in the z direction), and the element back surface 21b faces downward in the z direction (z2 side in the z direction). The element main surface 21a and the element back surface 21b are each flat (including the case where they are substantially flat).

The switching element 21 has three electrodes 211, 212, and 213. The electrode 211 is provided on the back surface 21b of the element, and the electrodes 212 and 213 are provided on the main surface 21a of the element. The three electrodes 211, 212, 213 are electrically connected to the switching function section of the switching element 21, respectively. In an example where switching element 21 is an IGBT, electrode 211 is a collector, electrode 212 is an emitter, and electrode 213 is a gate. The switching element 21 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 213. The switching operation is an operation in which an on state in which current flows between the two electrodes 211 and 212 and an off state in which no current flows between the two electrodes 211 and 212 are switched. When the switching element 21 is in the on state, a forward current flows from the electrode 211 to the electrode 212. The electrode 213 is an example of a "third control electrode" described in the claims.

The switching element 22 has an element main surface 22a and an element back surface 22b, as shown in FIGS. 11 and 13. The element main surface 22a and the element back surface 22b are spaced apart in the z direction. The element main surface 22a faces upward in the z direction (z1 side in the z direction), and the element back surface 22b faces downward in the z direction (z2 side in the z direction). The element main surface 22a and the element back surface 22b are each flat (including the case where they are substantially flat).

The switching element 22 has three electrodes 221, 222, and 223. The electrode 221 is provided on the back surface 22b of the element, and the electrodes 222 and 223 are provided on the main surface 22a of the element. The three electrodes 221, 222, 223 are electrically connected to the switching function section of the switching element 22, respectively. In an example where switching element 22 is a MOSFET, electrode 221 is a drain, electrode 222 is a source, and electrode 223 is a gate. The switching element 22 performs a switching operation in response to a drive signal (second drive signal) input to the electrode 223. The switching operation is an operation in which an on state in which current flows between the two electrodes 221 and 222 and an off state in which no current flows between the two electrodes 221 and 222 are switched. When the switching element 22 is in the on state, a forward current flows from the electrode 221 to the electrode 222. The electrode 223 is an example of a "fourth control electrode" described in the claims.

As shown in FIGS. 6, 7, and 11, the switching element 22 has a main surface wiring section 225. As shown in FIG. 11, the main surface wiring section 225, like the electrode 223, is provided on the element main surface 22a. The main surface wiring portion 225 is not electrically connected to the switching function portion of the switching element 22 . In the illustrated example, the main surface wiring section 225 has a rectangular shape in plan view. Further, the main surface wiring section 225 is located on the y1 side in the y direction from the center in the y direction on the element main surface 22a. As shown in FIG. 7, the main surface wiring section 225 includes a third pad section 225a, a fourth pad section 225b, and a connecting section 225c. The third pad portion 225a is a portion to which a wire 61Q, which will be described later, is bonded. The fourth pad portion 225b is a portion to which a wire 62Q, which will be described later, is bonded. The third pad section 225a and the fourth pad section 225b are arranged along the y direction in plan view. The third pad portion 225a is located closer to the y1 side in the y direction than the fourth pad portion 225b. The third pad portion 225a is located closer to the second control element 8B than the fourth pad portion 225b in the y direction. In the illustrated example, the dimension of the third pad section 225a in the x direction and the dimension of the fourth pad section 225b in the x direction are the same (or substantially the same). The connecting portion 225c connects the third pad portion 225a and the fourth pad portion 225b. The dimension of the connecting portion 225c in the x direction is the same (or approximately the same) as each dimension of the third pad portion 225a and the fourth pad portion 225b in the x direction.

In each second switch section 2 (each of the fourth arm 2A, fifth arm 2B, and sixth arm 2C), the switching element 21 and the switching element 22 are electrically connected in parallel. Specifically, electrode 211 (collector) and electrode 221 (drain) are electrically connected, and electrode 212 (emitter) and electrode 222 (source) are electrically connected.

The protection element 23 includes a diode function section. The diode function section operates as a freewheeling diode. In this embodiment, the protection element 23 is, for example, a Schottky barrier diode.

As shown in FIG. 13, the protection element 23 has an element main surface 23a and an element back surface 23b. The element main surface 23a and the element back surface 23b are spaced apart in the z direction. The element main surface 23a faces upward in the z direction (z1 side in the z direction), and the element back surface 23b faces downward in the z direction (z2 side in the z direction). The element main surface 23a and the element back surface 23b are each flat (including the case where they are substantially flat).

The protection element 23 includes two electrodes 231 and 232, as shown in FIG. The electrode 231 is formed on the main surface 23a of the element, and the electrode 232 is formed on the back surface 23b of the element. In the example where protection element 23 is a diode, electrode 231 is an anode and electrode 232 is a cathode.

In each of the second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C), the protection element 23 is connected antiparallel to the switching element 21 and the switching element 22. Antiparallel means a state in which the forward currents of the switching elements 21 and 22 and the forward currents of the protection element 23 are connected in parallel so that they are in opposite directions. The electrode 231 (anode) of the protection element 23 is connected to the electrode 212 (emitter) of the switching element 21 and the electrode 222 (source) of the switching element 22, and the electrode 232 (cathode) of the protection element 23 is connected to the electrode 212 (emitter) of the switching element 21 and the electrode 222 (source) of the switching element 22. 211 (collector) and the electrode 221 (drain) of the switching element 22. Thereby, in each second switch section 2, when a reverse voltage is applied to the switching element 21 and the switching element 22, a forward current flows through the protection element 23, and the reverse voltage is applied to the switching element 21 and the switching element 22. is reduced.

As understood from FIGS. 10, 11, and 13, the switching element 21A, the switching element 22A, and the protection element 23A are each bonded to the lead 3A via the conductive bonding material 29. Switching element 21B, switching element 22B, and protection element 23B are also bonded to lead 3A via conductive bonding material 29, respectively. The switching element 21C, the switching element 22C, and the protection element 23C are also each bonded to the lead 3A via the conductive bonding material 29. These conductive bonding materials 29 are, for example, solder, metal paste, or sintered metal.

As shown in FIG. 6, in each second switch section 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C), the switching element 21, the switching element 22, and the protection element 23 are arranged in a line in the y direction. will be placed in In the illustrated example, in each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C), the switching element 22, the switching element 21, the protection They are arranged in the order of elements 23. Therefore, the switching element 21 is located between the switching element 22 and the protection element 23 in the y direction. In addition, in each of the second switch sections 2 (each of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C), the positions of the switching element 21 and the switching element 22 may be opposite. In this case, a main surface wiring section similar to the main surface wiring section 225 is formed in the switching element 21 .

As shown in FIG. 14, a three-phase AC inverter circuit constituted by a plurality of first switch sections 1 and a plurality of second switch sections 2 has a first phase of 10U, a second phase of 10V, and a third phase of 10W. . The first phase 10U, second phase 10V, and third phase 10W are U phase, V phase, and W phase, respectively.

The first phase 10U includes a first arm 1A and a fourth arm 2A. In the first phase 10U, the first arm 1A and the fourth arm 2A are electrically connected in series. The first arm 1A is the lower arm of the first phase 10U, and the fourth arm 2A is the upper arm of the first phase 10U.

The second phase 10V includes a second arm 1B and a fifth arm 2B. At the second phase of 10V, the second arm 1B and the fifth arm 2B are electrically connected in series. The second arm 1B is the lower arm of the second phase 10V, and the fifth arm 2B is the upper arm of the second phase 10V.

The third phase 10W includes a third arm 1C and a sixth arm 2C. In the third phase 10W, the third arm 1C and the sixth arm 2C are electrically connected in series. The third arm 1C is the lower arm of the third phase 10W, and the sixth arm 2C is the upper arm of the third phase 10W.

The first control element 8A controls the switching operations of the plurality of switching elements 11 and the plurality of switching elements 12, and is, for example, a driver IC. The first control element 8A receives a first input signal from the outside and generates a first drive signal for controlling the switching operation of each first switch section 1 based on the first input signal. The first control element 8A outputs a first drive signal (eg, gate voltage) to the electrode 113 (gate) of each switching element 11 and the electrode 123 (gate) of each switching element 12. Thereby, the switching operation of each switching element 11 and each switching element 12 is controlled. In the present embodiment, the first control element 8A has a rectangular shape whose longitudinal direction is in the x direction in plan view.

In this embodiment, the first control element 8A provides a first drive signal input to the switching element 11 for each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C). A delay time is provided between the first drive signal and the first drive signal input to the switching element 12. The delay time is changed as appropriate depending on, for example, the switching speed of switching element 11 and the switching speed of switching element 12. In an example in which the switching element 11 is an IGBT and the switching element 12 is a MOSFET, the first drive signal to the switching element 12 has a timing of switching from an on signal to an off signal than the first drive signal to the switching element 11. , and the switching timing from the off signal to the on signal is early. Note that the first control element 8A does not necessarily need to provide a delay time between the first drive signal input to the switching element 11 and the first drive signal input to the switching element 12.

As shown in FIG. 4, the first control element 8A is located on the y1 side in the y direction with respect to each first switch section 1. Therefore, the first control element 8A is located closer to the y1 side in the y direction than the switching element 11 and the switching element 12 of each first switch section 1. In the present embodiment, in each first switch section 1, the switching element 12 is located on the y1 side in the y direction than the switching element 11, so the switching element 12 is located closer to the first control element 8A and the switching element 11 in the y direction. located between.

The second control element 8B controls the switching operations of the plurality of switching elements 21 and the plurality of switching elements 22, and is, for example, a driver IC. The second control element 8B receives a second input signal from the outside and generates a second drive signal for controlling the switching operation of each second switch section 2 based on the second input signal. The second control element 8B outputs a second drive signal (eg, gate voltage) to the electrode 213 (gate) of each switching element 21 and the electrode 223 (gate) of each switching element 22. Thereby, the switching operation of each switching element 21 and each switching element 22 is controlled. In this embodiment, the second control element 8B has a rectangular shape whose longitudinal direction is the x direction in plan view.

In the present embodiment, the second control element 8B provides a second drive signal input to the switching element 21 for each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). A delay time is provided between the second drive signal and the second drive signal input to the switching element 22. The delay time is changed as appropriate depending on, for example, the switching speed of the switching element 21 and the switching speed of the switching element 22. In an example in which the switching element 21 is an IGBT and the switching element 22 is a MOSFET, the second drive signal to the switching element 22 has a timing for switching from an on signal to an off signal than the second drive signal to the switching element 21. , and the switching timing from the off signal to the on signal is early. Note that the second control element 8B does not necessarily need to provide a delay time between the second drive signal input to the switching element 21 and the second drive signal input to the switching element 22.

As shown in FIG. 6, the second control element 8B is located on the y1 side in the y direction with respect to each second switch section 2. Therefore, the second control element 8B is located closer to the y1 side in the y direction than the switching element 21 and the switching element 22 of each second switch section 2. In this embodiment, in each second switch section 2, the switching element 22 is located on the y1 side in the y direction than the switching element 21, so that the switching element 22 is located closer to the second control element 8B and the switching element 21 in the y direction. located between.

As shown in FIGS. 4 and 6, the first control element 8A and the second control element 8B each have a plurality of electrodes 81 and 82. A plurality of electrodes 81 and 82 are arranged on the upper surface of each of the first control element 8A and the second control element 8B. The plurality of electrodes 81 of the first control element 8A are electrically connected to any one of the plurality of first switch sections 1 (first arm 1A, second arm 1B, and third arm 1C). The aforementioned first drive signal is output from the plurality of electrodes 81 of the first control element 8A. The plurality of electrodes 82 of the first control element 8A are electrically connected to any of the leads 4A to 4H. The plurality of electrodes 81 of the second control element 8B are electrically connected to any one of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). The aforementioned second drive signal is output from the electrode 81 of the second control element 8B. The plurality of electrodes 82 of the second control element 8B are electrically connected to any one of the leads 4J to 4N, 4Q, and 4R. Furthermore, the second control element 8B has a plurality of electrodes 83. A plurality of electrodes 83 are arranged on the upper surface of the second control element 8B. Each of the plurality of electrodes 83 is electrically connected to a corresponding one of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C). A detection signal for detecting the conduction state of each first switch section 1 is input to the plurality of electrodes 83 .

The first control element 8A is bonded to the lead 4R via a bonding material 85, as shown in FIG. The second control element 8B is bonded to the lead 4H via a bonding material 85, as shown in FIG. In the semiconductor device A1, since electrodes are not formed on the lower surfaces of the first control element 8A and the second control element 8B (the surfaces facing the z2 side in the z direction), the bonding material 85 may be conductive or insulating. . Note that when electrodes are formed on the lower surfaces of each of the first control element 8A and the second control element 8B, the bonding material 85 may be a conductive material (for example, solder, metal paste material, sintered metal, etc.). It will be done.

The plurality of electronic components 89U, 89V, and 89W are elements that assist the respective functions of the first control element 8A and the second control element 8B, and are, for example, diodes. Although the example shown in FIG. 3 includes three electronic components 89U, 89V, and 89W, the number of electronic components is not limited to this. As shown in FIG. 3, each of the plurality of electronic components 89U, 89V, and 89W is joined to a corresponding one of the plurality of leads 4A, 4B, and 4C. The plurality of electronic components 89U, 89V, and 89W are each bonded using a conductive bonding material 891, as shown in FIG. The conductive bonding material 891 is, for example, solder, metal paste material, sintered metal, or the like.

The plurality of leads 3A to 3G, 3Z and the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R are connected to the plurality of switching elements 11, the plurality of switching elements 12, and the plurality of protection elements 13, as shown in FIG. , supports the plurality of switching elements 21, the plurality of switching elements 22, the plurality of protection elements 23, the first control element 8A, the second control element 8B, and the plurality of electronic components 89U, 89V, 89W, and is connected to them. Constructs a conduction path. Among the plurality of leads 3A to 3G, 3Z and the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R, the leads 4H and 4R are integrally formed, and the others are spaced apart from each other. The auxiliary line L1 shown in FIG. 3 is the boundary between the lead 4H and the lead 4R, and shows a part where they are integrally connected. Note that the lead 4H and the lead 4R may be regarded as one lead. Unlike this example, the leads 4H and 4R may be spaced apart from each other.

The plurality of leads 3A to 3G, 3Z and the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R may be formed from different conductive members, or may be formed from one conductive member. The plurality of leads 3A to 3G, 3Z and the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R are made of, for example, Cu or a Cu alloy. The constituent materials of the plurality of leads 3A to 3G, 3Z and the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R may be not Cu or Cu alloy, but Ni or Ni alloy, or 42 alloy. good. Note that the respective constituent materials of the plurality of leads 3A to 3G, 3Z and the respective constituent materials of the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R may be the same or different. .

When the semiconductor device A1 is configured as an IPM, a motor drive current is passed through the plurality of leads 3A to 3G, and a control current is passed to the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R. Therefore, a higher voltage is applied to the plurality of leads 3A to 3G than to the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R, and a larger current is applied to the plurality of leads 3A to 3G. As shown in FIG. 3, in this embodiment, the plurality of leads 3A to 3G, 3Z on the high voltage side and the leads 4A to 4H, 4J to 4N, 4P to 4R on the low voltage side are mutually connected in the y direction. They are placed on opposite sides.

The switching element 21, switching element 22, and protection element 23 of each of the plurality of second switch sections 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) are mounted on the lead 3A. As will be understood from the configuration described later, the lead 3A includes an electrode 211 (collector) of each switching element 21, an electrode 221 (drain) of each switching element 22, and an electrode 232 (cathode) of each protection element 23. conducts to. As shown in FIGS. 3 and 6, the lead 3A includes a plurality of mounting portions 311A, 312A, 313A, a terminal portion 32A, a pad portion 33A, and a connecting portion 34A.

As shown in FIG. 3, the plurality of mounting parts 311A, 312A, and 313A are each covered with a sealing member 7. The plurality of mounting parts 311A, 312A, and 313A are integrally formed. The plurality of mounting parts 311A, 312A, and 313A are each bonded to the support substrate 51 via a bonding material 39. The bonding material 39 may be conductive or insulating. The bonding material 39 is preferably one with excellent thermal conductivity.

As shown in FIG. 6, a switching element 21A, a switching element 22A, and a protection element 23A are mounted on the mounting portion 311A, respectively. The mounting portion 311A is electrically connected to the electrode 211 (collector) of the switching element 21A and the electrode 221 (drain) of the switching element 22A, and is electrically connected to the electrode 232 (cathode) of the protection element 23A. That is, the electrode 211 of the switching element 21A, the electrode 221 of the switching element 22A, and the electrode 232 of the protection element 23A are electrically connected to each other via the mounting portion 311A.

As shown in FIG. 6, a switching element 21B, a switching element 22B, and a protection element 23B are mounted on the mounting portion 312A, respectively. The mounting portion 312A is electrically connected to the electrode 211 (collector) of the switching element 21B and the electrode 221 (drain) of the switching element 22B, and is electrically connected to the electrode 232 (cathode) of the protection element 23B. That is, the electrode 211 of the switching element 21B, the electrode 221 of the switching element 22B, and the electrode 232 of the protection element 23B are electrically connected to each other via the mounting portion 312A.

As shown in FIG. 6, a switching element 21C, a switching element 22C, and a protection element 23C are mounted on the mounting portion 313A, respectively. The mounting portion 313A is electrically connected to the electrode 211 (collector) of the switching element 21C and the electrode 221 (drain) of the switching element 22C, and is electrically connected to the electrode 232 (cathode) of the protection element 23C. That is, the electrode 211 of the switching element 21C, the electrode 221 of the switching element 22C, and the electrode 232 of the protection element 23C are electrically connected to each other via the mounting portion 313A.

The terminal portion 32A is a portion of the lead 3A that protrudes from the sealing member 7, as shown in FIG. The terminal portion 32A protrudes from the mounting portions 311A, 312A, and 313A on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R in the y direction. The terminal portion 32A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32A is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33A and the connecting portion 34A are covered with the sealing member 7. The pad portion 33A and the connecting portion 34A are interposed between the mounting portion 312A and the terminal portion 32A, as shown in FIG. The pad portion 33A is located on the z1 side in the z direction with respect to the mounting portion 312A, and is connected to the terminal portion 32A. As shown in FIG. 13, the connecting portion 34A is connected to the mounting portion 311A and the pad portion 33A, and is inclined with respect to the y direction.

As shown in FIG. 3, the leads 3B, 3C, and 3D are arranged on the x2 side in the x direction with respect to the leads 3A. Leads 3B, 3C, and 3D are lined up in the x direction. The shapes of the leads 3B, 3C, and 3D are not particularly limited, and in the illustrated example, the leads 3B, 3C, and 3D have the same shape (or approximately the same shape) and the same size (or approximately the same size). ).

The first arm 1A is mounted on the lead 3B. That is, the switching element 11A, the switching element 12A, and the protection element 13A are mounted on the lead 3B, respectively. As will be understood from the configuration detailed later, the lead 3B is electrically connected to the electrode 111 (collector) of the switching element 11A, the electrode 121 (drain) of the switching element 12A, and the electrode 132 (cathode) of the protection element 13A. As shown in FIGS. 3 and 4, the lead 3B includes a mounting portion 31B, a terminal portion 32B, a pad portion 33B, and a connecting portion 34B.

As shown in FIG. 3, the mounting portion 31B is covered with a sealing member 7. The mounting portion 31B is bonded to the support substrate 51 via a bonding material 39. As shown in FIG. 4, a switching element 11A, a switching element 12A, and a protection element 13A are mounted on the mounting portion 31B, respectively. The mounting portion 31B is electrically connected to the electrode 111 (collector) of the switching element 11A and the electrode 121 (drain) of the switching element 12A, and is electrically connected to the electrode 132 (cathode) of the protection element 13A. That is, the electrode 111 of the switching element 11A, the electrode 121 of the switching element 12A, and the electrode 132 of the protection element 13A are electrically connected to each other via the mounting portion 31B.

The terminal portion 32B is a portion of the lead 3B that protrudes from the sealing member 7, as shown in FIG. The terminal portion 32B protrudes from the mounting portion 31B in the y direction on the side opposite to the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32B is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32B is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33B and the connecting portion 34B are covered with the sealing member 7. The pad portion 33B and the connecting portion 34B are interposed between the mounting portion 31B and the terminal portion 32B, as shown in FIG. The pad portion 33B, like the pad portion 33A, is located on the z1 side in the z direction with respect to the mounting portion 31B. The pad portion 33B is connected to the terminal portion 32B. A wire 6A is bonded to the pad portion 33B. The connecting portion 34B is connected to the mounting portion 31B and the pad portion 33B, and is inclined with respect to the y direction similarly to the connecting portion 34A.

The second arm 1B is mounted on the lead 3C. That is, the switching element 11B, the switching element 12B, and the protection element 13B are mounted on the lead 3C, respectively. As will be understood from the configuration detailed later, the lead 3C is electrically connected to the electrode 111 (collector) of the switching element 11B, the electrode 121 (drain) of the switching element 12B, and the electrode 132 (cathode) of the protection element 13B. As shown in FIGS. 3 and 4, the lead 3C includes a mounting portion 31C, a terminal portion 32C, a pad portion 33C, and a connecting portion 34C.

As shown in FIG. 3, the mounting portion 31C is covered with a sealing member 7. The mounting portion 31C is bonded to the support substrate 51 via a bonding material 39. As shown in FIG. 4, a switching element 11B, a switching element 12B, and a protection element 13B are mounted on the mounting portion 31C. The mounting portion 31C is electrically connected to the electrode 111 (collector) of the switching element 11B and the electrode 121 (drain) of the switching element 12B, and is electrically connected to the electrode 132 (cathode) of the protection element 13B. That is, the electrode 111 of the switching element 11B, the electrode 121 of the switching element 12B, and the electrode 132 of the protection element 13B are electrically connected to each other via the mounting portion 31C.

The terminal portion 32C is a portion of the lead 3C that protrudes from the sealing member 7, as shown in FIG. The terminal portion 32C protrudes in the y direction with respect to the mounting portion 31C on the side opposite to the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32C is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32C is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33C and the connecting portion 34C are covered with the sealing member 7. The pad portion 33C and the connecting portion 34C are interposed between the mounting portion 31C and the terminal portion 32C, as shown in FIG. The pad portion 33C is located on the z1 side in the z direction with respect to the mounting portion 31C, similarly to the pad portions 33A and 33B. The pad portion 33C is connected to the terminal portion 32C. A wire 6B is bonded to the pad portion 33C. The connecting portion 34C is connected to the mounting portion 31C and the pad portion 33C, and is inclined with respect to the y direction like the connecting portions 34A and 34B.

The third arm 1C is mounted on the lead 3D. That is, the lead 3D is equipped with a switching element 11C, a switching element 12C, and a protection element 13C, respectively. As will be understood from the configuration detailed later, the lead 3D is electrically connected to the electrode 111 (collector) of the switching element 11C, the electrode 121 (drain) of the switching element 12C, and the electrode 132 (cathode) of the protection element 13C. As shown in FIGS. 3 and 4, the lead 3D includes a mounting portion 31D, a terminal portion 32D, a pad portion 33D, and a connecting portion 34D.

As shown in FIG. 3, the mounting portion 31D is covered with a sealing member 7. The mounting portion 31D is bonded to the support substrate 51 via a bonding material 39. As shown in FIG. 4, a switching element 11C, a switching element 12C, and a protection element 13C are mounted on the mounting portion 31D. The mounting portion 31D is electrically connected to the electrode 111 (collector) of the switching element 11C and the electrode 121 (drain) of the switching element 12C, and is electrically connected to the electrode 132 (cathode) of the protection element 13C. That is, the electrode 111 of the switching element 11C, the electrode 121 of the switching element 12C, and the electrode 132 of the protection element 13C are electrically connected to each other via the mounting portion 31D.

As shown in FIG. 3, the terminal portion 32D is a portion of the lead 3D that protrudes from the sealing member 7. The terminal portion 32D protrudes from the mounting portion 31D in the y direction on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32D is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33D and the connecting portion 34D are covered with the sealing member 7. As shown in FIG. 3, the pad portion 33D and the connecting portion 34D are interposed between the mounting portion 31D and the terminal portion 32D. The pad portion 33D is located on the z1 side in the z direction with respect to the mounting portion 31D, similarly to the pad portions 33A, 33B, and 33C. The pad portion 33D is connected to the terminal portion 32D. A wire 6C is bonded to the pad portion 33D. The connecting portion 34D is connected to the mounting portion 31D and the pad portion 33D, and is inclined with respect to the y direction like the connecting portions 34A, 34B, and 34C.

As shown in FIGS. 2 and 3, the leads 3E, 3F, and 3G are arranged on the x2 side in the x direction with respect to the leads 3D. Leads 3E, 3F, and 3G are lined up in the x direction. Each of the leads 3E, 3F, and 3G is not mounted with any of the plurality of first switch sections 1 and the plurality of second switch sections 2.

The lead 3E is electrically connected to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the electrode 131 (anode) of the protection element 13A, according to a configuration that will be described in detail later. The lead 3E includes a terminal portion 32E and a pad portion 33E, as shown in FIG. 3 and the like. The terminal portion 32E and the pad portion 33E are connected.

The terminal portion 32E is a portion of the lead 3E that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32E protrudes from the pad portion 33E in the y direction on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32E is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32E is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33E is covered with the sealing member 7, and has a rectangular shape in plan view in the illustrated example. As shown in FIG. 3, the pad portion 33E does not overlap the support substrate 51 in plan view. The pad portion 33E is arranged at the same (or approximately the same) position (at the same (or approximately the same) height) as each of the pad portions 33A to 33D in the z direction. As shown in FIG. 3, the pad portion 33E is connected to a wire 6D, and is connected to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the protection element 13A via the wire 6D. The electrodes 131 (anodes) are electrically connected to each other.

The lead 3F is electrically connected to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the electrode 131 (anode) of the protection element 13B, respectively, according to a configuration described in detail later. The lead 3F includes a terminal portion 32F and a pad portion 33F, as shown in FIG. 3 and the like. The terminal portion 32F and pad portion 33F are connected.

The terminal portion 32F is a portion of the lead 3F that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32F protrudes in the y direction with respect to the pad portion 33F on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32F is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32F is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33F is covered with the sealing member 7, and has a rectangular shape in plan view in the illustrated example. As shown in FIG. 3, the pad portion 33F does not overlap the support substrate 51 in plan view. The pad section 33F is arranged at the same (or approximately the same) position (at the same (or approximately the same) height) as each of the pad sections 33A to 33E in the z direction. As shown in FIG. 3, the pad portion 33F is connected to a wire 6E, and is connected to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the protection element 13B via the wire 6E. The electrodes 131 (anodes) are electrically connected to each other.

The lead 3G is electrically connected to the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the electrode 131 (anode) of the protection element 13C, according to a configuration that will be described in detail later. The lead 3G includes a terminal portion 32G and a pad portion 33G, as shown in FIG. 3 and the like. The terminal portion 32G and the pad portion 33G are connected.

The terminal portion 32G is a portion of the lead 3G that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32G protrudes in the y direction with respect to the pad portion 33G on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R. The terminal portion 32G is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 32G is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33G is covered with the sealing member 7. As shown in FIG. 3, the pad portion 33G does not overlap the support substrate 51 in plan view. The pad portion 33G is arranged at the same (or approximately the same) position (at the same (or approximately the same) height) as each of the pad portions 33A to 33F in the z direction. As shown in FIG. 3, the pad portion 33G is connected to a wire 6F, which connects the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the protection element 13C via the wire 6F. The electrodes 131 (anodes) are electrically connected to each other.

The lead 3Z is arranged on the x1 side in the x direction with respect to the lead 3A. The lead 3Z is not electrically connected to any of the plurality of first switch sections 1 and the plurality of second switch sections 2. The lead 3Z includes a terminal portion 32Z and a pad portion 33Z, as shown in FIG. 3 and the like. The terminal portion 32Z and the pad portion 33Z are connected.

The terminal portion 32Z is a portion of the lead 3Z that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 32Z protrudes in the y direction with respect to the pad portion 33Z on the opposite side from the leads 4A to 4H, 4J to 4N, and 4P to 4R. In the illustrated example, the terminal portion 32Z is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 33Z is covered with the sealing member 7. As shown in FIG. 3, the pad portion 33Z does not overlap the support substrate 51 in plan view. The pad section 33Z is arranged at the same (or approximately the same) position (at the same (or approximately the same) height) as each of the pad sections 33A to 33G in the z direction.

As shown in FIG. 3, the leads 4A, 4B, and 4C are arranged on the x1 side in the x direction with respect to the lead 4D. Although lead 4A will be described in detail below, lead 4B and lead 4C also include similar components. In this case, the constituent parts of the lead 4B and the lead 4C are obtained by changing "A" to "B" or "C" in each constituent part of the lead 4A.

The lead 4A includes a terminal portion 42A and a pad portion 43A, as shown in FIG. 3 and the like. As described above, although detailed description is omitted, as shown in FIG. 3 and the like, the lead 4B includes a terminal portion 42B and a pad portion 43B, and the lead 4C includes a terminal portion 42C and a pad portion 43C.

The terminal portion 42A is a portion of the lead 4A that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42A protrudes in the y direction with respect to the pad portion 43A on the opposite side from the leads 3A to 3G and 3Z. The terminal portion 42A is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42A is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 43A is covered with the sealing member 7. As shown in FIG. 3, the electronic component 89U and one of the plurality of wires 6L are bonded to the pad portion 43A. Note that an electronic component 89V is bonded to the pad portion 43B instead of the electronic component 89U, and an electronic component 89W is bonded to the pad portion 43C instead of the electronic component 89U. The shape of the pad portion 43A is not limited to the illustrated example.

As shown in FIG. 3, the plurality of leads 4D to 4G are arranged on the x2 side in the x direction with respect to the lead 4C. Although lead 4D will be described in detail below, leads 4E, 4F, and 4G also include similar components. In this case, the constituent parts of the leads 4E, 4F, and 4G are obtained by changing "D" to "E", "F", or "G" in each constituent part of the lead 4D.

As shown in FIG. 3, the lead 4D includes a terminal portion 42D, a pad portion 43D, and a connecting portion 44D. As mentioned above, as shown in FIG. 3 etc., the lead 4E includes a terminal portion 42E, a pad portion 43E, and a connecting portion 44E, and the lead 4F includes a terminal portion 42F, a pad portion 43F, and a connecting portion 44E. The lead 4G includes a terminal portion 42G, a pad portion 43G, and a connecting portion 44G.

The terminal portion 42D is a portion of the lead 4D that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42D protrudes in the y direction with respect to the pad portion 43D on the opposite side to the leads 3A to 3G and 3Z. The terminal portion 42D is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42D is bent toward the z1 side in the z direction to form an L-shape.

The pad portion 43D is covered with the sealing member 7. As shown in FIG. 3, the pad portion 43D is connected to one of the plurality of wires 6L, and is electrically connected to the electrode 82 of the second control element 8B via the wire 6L.

The connecting portion 44D is covered with the sealing member 7. As shown in FIG. 3, the connecting portion 44D is connected to the terminal portion 42D and the pad portion 43D and is interposed between them.

The second control element 8B is mounted on the lead 4H. As shown in FIG. 3, the lead 4H includes a mounting portion 41H, a terminal portion 42H, a pad portion 43H, a plurality of connecting portions 44H, and a protruding portion 45H.

The mounting portion 41H is covered with the sealing member 7. As shown in FIGS. 3 and 13, the second control element 8B is mounted on the mounting portion 41H. The second control element 8B is fixed to the mounting portion 41H by the bonding material 85, as described above. As shown in FIG. 13, the mounting portion 41H is spaced apart from the support substrate 51 in the z direction.

The terminal portion 42H is a portion of the lead 4H that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42H protrudes from the mounting portion 41H to the side opposite to the leads 3A to 3G and 3Z in the y direction. The terminal portion 42H is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42H is bent in the z direction to form an L-shape.

The pad portion 43H is covered with the sealing member 7. The pad portion 43H is adjacent to the mounting portion 41H. As shown in FIG. 3, one of the plurality of wires 6L is bonded to the pad portion 43H.

Each of the plurality of connecting portions 44H is covered with a sealing member 7. Some of the plurality of connecting parts 44H are interposed between and connected to the terminal part 42H and the pad part 43H, and others are interposed between and connected to the mounting part 41H and the protruding part 45H.

As shown in FIG. 3, the protruding portion 45H extends from the connecting portion 44H connected to the mounting portion 41H toward the y1 side in the y direction, and protrudes from the sealing member 7.

The first control element 8A is mounted on the lead 4R. The lead 4R includes a mounting portion 41R, a terminal portion 42R, a pad portion 43R, and a connecting portion 44R, as shown in FIG. 3 and the like.

The mounting portion 41R is covered with a sealing member 7. As shown in FIGS. 3 and 12, the first control element 8A is mounted on the mounting portion 41R. As described above, the first control element 8A is fixed to the mounting portion 41R with the bonding material 85. As shown in FIG. 12, the mounting portion 41R is spaced apart from the support substrate 51 in the z direction, similarly to the mounting portion 41H.

The terminal portion 42R is a portion of the lead 4R that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42R protrudes from the mounting portion 41R to the side opposite to the leads 3A to 3G and 3Z in the y direction. The terminal portion 42R is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42R is bent in the z direction to form an L-shape.

The pad portion 43R is covered with the sealing member 7. The pad portion 43R is adjacent to the mounting portion 41R. As shown in FIG. 3, one of the plurality of wires 6L is bonded to the pad portion 43R.

The connecting portions 44R are each covered with a sealing member 7. The connecting portion 44R is interposed between the terminal portion 42R and the pad portion 43R and connected thereto.

As shown in FIG. 3, the plurality of leads 4J to 4N, 4P, and 4Q are arranged on the x2 side in the x direction with respect to the lead 4H. Although lead 4Q will be described in detail below, leads 4J, 4K, 4L, 4M, 4N, and 4P also include similar components. In this case, leads 4J, 4K, 4L, These are the constituent parts of 4M, 4N, and 4P.

As shown in FIG. 3, the lead 4Q includes a terminal portion 42Q, a pad portion 43Q, and a connecting portion 44Q. As described above, although detailed description is omitted, as shown in FIG. 3, the lead 4J includes a terminal portion 42J, a pad portion 43J, and a connecting portion 44J, and the lead 4K includes a terminal portion 42K, a pad portion 43K, and a connecting portion. 44K, the lead 4L includes a terminal portion 42L, a pad portion 43L, and a connecting portion 44L, the lead 4M includes a terminal portion 42M, a pad portion 43M, and a connecting portion 44M, and the lead 4N includes a terminal portion 42N, a pad portion 43L, and a connecting portion 44M. 43N and a connecting portion 44N, and the lead 4P includes a terminal portion 42P, a pad portion 43P, and a connecting portion 44P.

The terminal portion 42Q is a portion of the lead 4Q that protrudes from the sealing member 7. As shown in FIG. 3, the terminal portion 42Q protrudes in the y direction from the pad portion 43Q on the side opposite to the leads 3A to 3G and 3Z. The terminal portion 42Q is used to electrically connect the semiconductor device A1 to an external circuit. In the illustrated example, the terminal portion 42Q is bent in the z direction to form an L-shape. The terminal portions 42Q, 42J to 42N of the plurality of leads 4Q, 4J to 4N are respectively arranged between the terminal portion 42H of the lead 4H and the terminal portion 42R of the lead 4R in the x direction, and are arranged between the terminal portion 42H of the lead 4H and the terminal portion 42R of the lead 4R. 42P is located on the x2 side in the x direction with respect to the terminal portion 42R.

The pad portion 43Q is covered with the sealing member 7. As shown in FIG. 3, one of the plurality of wires 6L is bonded to the pad portion 43Q, and the pad portion 43Q is electrically connected to the electrode 82 of the first control element 8A via the wire 6L. However, in the example shown in FIG. 3, none of the plurality of wires 6L is bonded to the pad portion 43P.

The connecting portion 44Q is covered with the sealing member 7. As shown in FIG. 3, the connecting portion 44Q is connected to the terminal portion 42Q and the pad portion 43Q, and is interposed between them.

In the illustrated example, the plurality of terminal portions 42A to 42C are arranged in line in the x direction with a first pitch width d1 (see FIG. 3). Further, the plurality of terminal portions 42D to 42H, 42J to 42N, and 42P to 42R are arranged in line in the x direction with a second pitch width d2 (see FIG. 3). The first pitch width d1 is larger than the second pitch width d2. The distance between the terminal portion 42C and the terminal portion 42D along the x direction is the first pitch width d1.

As shown in FIGS. 10 to 13, the support substrate 51 supports a plurality of leads 3A to 3D, and for example, leads from each of the plurality of first switch sections 1 and the plurality of second switch sections 2 via these. The semiconductor device A1 is provided for transmitting heat to the outside of the semiconductor device A1. The support substrate 51 is plate-shaped and rectangular in plan view. The support substrate 51 is made of an insulating material, and examples of the insulating material include ceramics such as alumina (Al ₂ O ₃ ), silicon nitride (SiN), aluminum nitride (AlN), and alumina containing zirconia. Note that the support substrate 51 is preferably made of ceramics from the viewpoint of strength, heat transfer rate, and insulation, but is not limited thereto, and various materials (eg, epoxy resin, silicon, etc.) may be used. Further, the support substrate 51 is preferably made of a material having higher thermal conductivity than the sealing member 7.

The support substrate 51 has a first surface 511, a second surface 512, a third surface 513, a fourth surface 514, a fifth surface 515, and a sixth surface 516, as shown in FIG. 3 and FIGS. 10 to 13. As shown in FIGS. 10 to 13, the first surface 511 and the second surface 512 are spaced apart in the z direction. The first surface 511 faces upward in the z direction (z1 side in the z direction), and the second surface 512 faces downward in the z direction (z2 side in the z direction). As shown in FIGS. 10 to 13, a plurality of mounting portions 311A, 312A, 313A, 31B, 31C, and 31D are bonded to the first surface 511 via a plurality of bonding materials 39, respectively. The second surface 512 is exposed from the sealing member 7, as shown in FIGS. 10 to 13. The third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are located between the first surface 511 and the second surface 512 in the z direction and are connected to them. As shown in FIGS. 3, 10, and 11, the third surface 513 and the fourth surface 514 are spaced apart in the x direction. The third surface 513 faces the x2 side in the x direction, and the fourth surface 514 faces the x1 side in the x direction. As shown in FIGS. 3, 12, and 13, the fifth surface 515 and the sixth surface 516 are spaced apart in the y direction. The fifth surface 515 faces the y2 side in the y direction, and the sixth surface 516 faces the y1 side in the y direction. In the illustrated example, the first surface 511, the second surface 512, the third surface 513, the fourth surface 514, the fifth surface 515, and the sixth surface 516 are each flat.

The plurality of connection members 6 connect two parts separated from each other. As understood from FIGS. 3 to 7, the plurality of connection members 6 include a plurality of wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. Each of the wires 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q (each connection member 6) is a bonding wire. In addition, as each connection member 6, a conductive plate member may be used instead of each 6A to 6F, 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q, or a bonding ribbon may be used. However, plated wire may also be used.

As shown in FIG. 6, the wire 6A is connected to the electrode 212 (emitter) of the switching element 21A, the electrode 222 (source) of the switching element 22A, and the electrode 231 (anode) of the protection element 23A. Thereby, the electrode 212 of the switching element 21A, the electrode 222 of the switching element 22A, and the electrode 231 of the protection element 23A are electrically connected to each other. Moreover, the wire 6A is joined to the pad portion 33B of the lead 3B, as shown in FIG. Since the lead 3B is electrically connected to the first arm 1A (the electrode 111 of the switching element 11A, the electrode 121 of the switching element 12A, and the electrode 132 of the protection element 13A), the electrode 212 of the switching element 21A, the electrode 222 of the switching element 22A, and the protection Electrode 231 of element 23A, electrode 111 of switching element 11A, electrode 121 of switching element 12A, and electrode 132 of protection element 13A are electrically connected via lead 3B and wire 6A.

As shown in FIG. 6, the wire 6B is connected to the electrode 212 (emitter) of the switching element 21B, the electrode 222 (source) of the switching element 22B, and the electrode 231 (anode) of the protection element 23B. Thereby, the electrode 212 of the switching element 21B, the electrode 222 of the switching element 22B, and the electrode 231 of the protection element 23B are electrically connected to each other. Moreover, the wire 6B is joined to the pad portion 33C of the lead 3C, as shown in FIG. Since the lead 3C is electrically connected to the second arm 1B (the electrode 111 of the switching element 11B, the electrode 121 of the switching element 12B, and the electrode 132 of the protection element 13B), the electrode 212 of the switching element 21B, the electrode 222 of the switching element 22B, and the protection Electrode 231 of element 23B, electrode 111 of switching element 11B, electrode 121 of switching element 12B, and electrode 132 of protection element 13B are electrically connected via lead 3C and wire 6B.

As shown in FIG. 6, the wire 6C is connected to the electrode 212 (emitter) of the switching element 21C, the electrode 222 (source) of the switching element 22C, and the electrode 231 (anode) of the protection element 23C. Thereby, the electrode 212 of the switching element 21C, the electrode 222 of the switching element 22C, and the electrode 231 of the protection element 23C are electrically connected to each other. Moreover, the wire 6C is joined to the pad portion 33D of the lead 3D, as shown in FIG. Since the lead 3D is electrically connected to the third arm 1C (the electrode 111 of the switching element 11C, the electrode 121 of the switching element 12C, and the electrode 132 of the protection element 13C), the electrode 212 of the switching element 21C, the electrode 222 of the switching element 22C, and the protection Electrode 231 of element 23C, electrode 111 of switching element 11C, electrode 121 of switching element 12C, and electrode 132 of protection element 13C are electrically connected via lead 3D and wire 6C.

As shown in FIG. 4, the wire 6D is connected to the electrode 112 (emitter) of the switching element 11A, the electrode 122 (source) of the switching element 12A, and the electrode 131 (anode) of the protection element 13A. Thereby, the electrode 112 of the switching element 11A, the electrode 122 of the switching element 12A, and the electrode 131 of the protection element 13A are electrically connected to each other. Moreover, the wire 6D is joined to the pad portion 33E of the lead 3E, as shown in FIG. Therefore, the lead 3E is electrically connected to the electrode 112 of the switching element 11A, the electrode 122 of the switching element 12A, and the electrode 131 of the protection element 13A via the wire 6D.

As shown in FIG. 4, the wire 6E is connected to the electrode 112 (emitter) of the switching element 11B, the electrode 122 (source) of the switching element 12B, and the electrode 131 (anode) of the protection element 13B. Thereby, the electrode 112 of the switching element 11B, the electrode 122 of the switching element 12B, and the electrode 131 of the protection element 13B are electrically connected to each other. Moreover, the wire 6E is joined to the pad portion 33F of the lead 3F, as shown in FIG. Therefore, the lead 3F is electrically connected to the electrode 112 of the switching element 11B, the electrode 122 of the switching element 12B, and the electrode 131 of the protection element 13B via the wire 6E.

As shown in FIG. 4, the wire 6F is connected to the electrode 112 (emitter) of the switching element 11C, the electrode 122 (source) of the switching element 12C, and the electrode 131 (anode) of the protection element 13C. Thereby, the electrode 112 of the switching element 11C, the electrode 122 of the switching element 12C, and the electrode 131 of the protection element 13C are electrically connected to each other. Moreover, the wire 6F is joined to the pad portion 33G of the lead 3G, as shown in FIG. Therefore, the lead 3G is electrically connected to the electrode 112 of the switching element 11C, the electrode 122 of the switching element 12C, and the electrode 131 of the protection element 13C via the wire 6F.

As shown in FIGS. 4 and 5, the plurality of wires 61G are individually connected to the electrode 81 of the first control element 8A and the main surface wiring part 125 (first pad part 125a) of the plurality of switching elements 12. Joined. As shown in FIGS. 4 and 5, the plurality of wires 62G are connected to the main surface wiring part 125 (second pad part 125b) of the plurality of switching elements 12 and the electrode 113 (gate) of the plurality of switching elements 11, Each is individually joined. With this configuration, the electrode 113 of each switching element 11 is electrically connected to the electrode 81 of the first control element 8A via the wire 62G, the main surface wiring section 125, and the wire 61G. Therefore, the first drive signal for each switching element 11 is input to the electrode 113 of each switching element 11 from the electrode 81 of the first control element 8A, through the wire 61G, the main surface wiring section 125, and the wire 62G.

As shown in FIG. 4, the plurality of wires 6H are connected to the electrode 123 of each switching element 12 and the electrode 81 of the first control element 8A. The plurality of wires 6H each transmit the first drive signal corresponding to each of the plurality of switching elements 12. That is, the first drive signal for each switching element 12 is input from the electrode 81 of the first control element 8A to the electrode 123 of each switching element 12 via the wire 6H.

As shown in FIGS. 6 and 7, the plurality of wires 61Q are individually connected to the electrode 81 of the second control element 8B and the main surface wiring part 225 (third pad part 225a) of the plurality of switching elements 22. Joined. As shown in FIGS. 6 and 7, the plurality of wires 62Q are connected to the main surface wiring part 225 (fourth pad part 225b) of the plurality of switching elements 22 and the electrode 213 (gate) of the plurality of switching elements 21, Each is individually joined. With this configuration, the electrode 213 of each switching element 21 is electrically connected to the electrode 81 of the second control element 8B via the wire 62Q, the main surface wiring section 225, and the wire 61Q. Therefore, the second drive signal for each switching element 21 is input to the electrode 213 of each switching element 21 from the electrode 81 of the second control element 8B, through the wire 61Q, the main surface wiring section 225, and the wire 62Q.

As shown in FIG. 5, the plurality of wires 6J are connected to the electrode 223 of each switching element 22 and the electrode 81 of the second control element 8B. The plurality of wires 6J each transmit the second drive signal corresponding to each of the plurality of switching elements 22. That is, the second drive signal for each switching element 22 is input from the electrode 81 of the second control element 8B to the electrode 223 of each switching element 22 via the wire 6J.

The plurality of wires 6K are connected to the electrode 222 of each switching element 22 and the electrode 83 of the second control element 8B. Each of the plurality of wires 6K transmits a detection signal for detecting the conduction state of any one of the fourth arm 2A, the fifth arm 2B, and the sixth arm 2C. In the illustrated example, the detection signal is the source current (or source voltage) of each switching element 22.

Each of the plurality of wires 6L connects to the electrode 82 of the first control element 8A or the electrode 82 of the second control element 8B, and one of the plurality of electronic components 89U, 89V, 89W or the plurality of leads 4A to 4H, 4J to 4N, It is connected to any of the pad portions 43A to 43H, 43J to 43N, and 43P to 43R of 4P to 4R. Therefore, each wire 6L connects the first control element 8A or the second control element 8B to each of the leads 4A to 4H, 4J to 4N, and 4P to 4R.

In the plurality of connection members 6, each wire 6A to 6F has a larger wire diameter than each wire 6H, 6J to 6L, 61G, 61Q, 62G, and 62Q. This is because when the semiconductor device A1 is configured as an IPM, a higher voltage is applied to the plurality of leads 3A to 3G than to the plurality of leads 4A to 4F, and a larger current flows through the plurality of leads 3A to 3G. Each wire 6A to 6F is made of, for example, Al or an Al alloy. The constituent material of each wire 6A to 6F may be Au or an Au alloy, or Cu or a Cu alloy instead of Al or an Al alloy. Each wire 6H, 6J to 6L, 61G, 61Q, 62G, 62Q is made of, for example, Au or an Au alloy. The constituent material of each wire 6H, 6J to 6L, 61G, 61Q, 62G, 62Q may be Al or Al alloy, Cu or Cu alloy instead of Au or Au alloy.

As shown in FIGS. 1 to 3 and 8 to 13, the sealing member 7 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a first control element 8A, a second control element 8B, A plurality of electronic components 89U, 89V, 89W, a portion of each of the plurality of leads 3A to 3G, 3Z, a portion of each of the plurality of leads 4A to 4H, 4J to 4N, 4P to 4R, and the support substrate 51. It covers a part and a plurality of connection members 6. The sealing member 7 is, for example, a black epoxy resin. The sealing member 7 has a resin main surface 71, a resin back surface 72, and a plurality of resin side surfaces 73 to 76.

As shown in FIGS. 8 to 13, the resin main surface 71 and the resin back surface 72 are spaced apart in the z direction. The main resin surface 71 faces upward in the z direction (z1 side in the z direction), and the resin back surface 72 faces downward in the z direction (z2 side in the z direction). The main resin surface 71 and the resin back surface 72 are each substantially flat. Each of the plurality of resin side surfaces 73 to 76 is located between and connected to the resin main surface 71 and the resin back surface 72 in the z direction. As shown in FIGS. 2, 3, 8, 10, and 11, the pair of resin side surfaces 73 and 74 are spaced apart in the x direction. A pair of resin side surfaces 73 and 74 face oppositely to each other in the x direction. As shown in FIGS. 2, 3, 9, 12, and 13, the pair of resin side surfaces 75 and 76 are spaced apart in the y direction. A pair of resin side surfaces 75 and 76 face opposite to each other in the y direction. As shown in FIGS. 2 and 3, a recess 731 recessed in the x direction is formed in the resin side surface 73. A recess 741 recessed in the x direction is formed in the resin side surface 74. The recess 731 and the recess 741 are used, for example, to fix the semiconductor device A1 when it is mounted. Further, as shown in FIGS. 2 and 3, a plurality of recesses 761 are formed in the resin side surface 76, each recessed in the y direction.

In the semiconductor device A1, the first DC voltage applied to the terminal portion 32A (lead 3A) and the terminal portion 32E (lead 3E) is changed to the first AC voltage by each switching operation of the first arm 1A and the fourth arm 2A. converted to voltage. Then, the first AC voltage is output from the terminal portion 32B (lead 3B). Further, the second DC voltage applied to the terminal portion 32A (lead 3A) and the terminal portion 32F (lead 3F) is converted into a second AC voltage by each switching operation of the second arm 1B and the fifth arm 2B. be done. Then, the second AC voltage is output from the terminal portion 32C (lead 3C). Furthermore, the third DC voltage applied to the terminal part 32A (lead 3A) and the terminal part 32G (lead 3G) is converted into a third AC voltage by each switching operation of the third arm 1C and the sixth arm 2C. be done. Then, the third AC voltage is output from the terminal portion 32D (lead 3D).

The circuit configuration of the semiconductor device A1 configured as described above is as shown in FIG. 14 as follows. In the example shown in FIG. 14, each switching element 11A, 11B, 11C and each switching element 21A, 21B, 21C is an IGBT, and each switching element 12A, 12B, 12C and each switching element 22A, 22B, 22C is each an IGBT. , MOSFET. Moreover, each protection element 13A, 13B, 13C and each protection element 23A, 23B, 23C is a Schottky barrier diode, respectively. In addition, in FIG. 14, the parasitic diodes of each switching element 12A, 12B, 12C and each switching element 22A, 22B, 22C are also illustrated.

The collector (electrode 211) of each switching element 21A, 21B, 21C, the drain (electrode 221) of each switching element 22A, 22B, 22C, and the cathode (electrode 131) of each protection element 23A, 23B, 23C are connected to each other, Connected to the terminal (lead 3A).

The emitter (electrode 212) of the switching element 21A, the source (electrode 222) of the switching element 22A, and the anode (electrode 231) of the protection element 23A are connected to the collector (electrode 111) of the switching element 11A and the switching element 21A through the connection point N1. 12A (electrode 121) and the cathode (electrode 132) of the protection element 13A. Connection point N1 is connected to the U terminal (lead 3B).

The emitter (electrode 212) of the switching element 21B, the source (electrode 222) of the switching element 22B, and the anode (electrode 231) of the protection element 23B are connected to the collector (electrode 111) of the switching element 11B and the switching element 11B via the connection point N2. 12B (electrode 121) and the cathode (electrode 132) of protection element 13B. Connection point N2 is connected to the V terminal (lead 3C).

The emitter (electrode 212) of the switching element 21C, the source (electrode 222) of the switching element 22C, and the anode (electrode 231) of the protection element 23C are connected to the collector (electrode 111) of the switching element 11C and the switching element 11C via the connection point N3. It is connected to the drain of 12C (electrode 121) and the cathode (electrode 132) of protection element 13C. Connection point N3 is connected to the W terminal (lead 3D).

The emitter (electrode 112) of the switching element 11A, the source (electrode 122) of the switching element 12A, and the anode (electrode 131) of the protection element 13A are connected to the NU terminal (lead 3E). The emitter (electrode 112) of the switching element 11B, the source (electrode 122) of the switching element 12B, and the anode (electrode 131) of the protection element 13B are connected to the NV terminal (lead 3F). The emitter (electrode 112) of the switching element 11C, the source (electrode 122) of the switching element 12C, and the anode (electrode 131) of the protection element 13C are connected to the NW terminal (lead 3G).

The voltage levels applied to the U terminal (lead 3B), V terminal (lead 3C), and W terminal (lead 3D) are, for example, about 0V to 650V. On the other hand, the voltage level applied to the NU terminal (lead 3E), NV terminal (lead 3F), and NW terminal (lead 3G) is, for example, about 0V, and the voltage level applied to the U terminal (lead 3B), V terminal (lead 3C) and the voltage level applied to the W terminal (lead 3D).

The gate (electrode 213) of each switching element 21A, 21B, 21C and the gate (electrode 223) of each switching element 22A, 22B, 22C are respectively connected to the second control element 8B. The sources (electrodes 222) of each switching element 22A, 22B, 22C are respectively connected to the second control element 8B. The gate (electrode 113) of each switching element 11A, 11B, 11C and the gate (electrode 123) of each switching element 12A, 12B, 12C are respectively connected to the first control element 8A.

The LINU terminal (lead 4Q), LINV terminal (lead 4J), and LINW terminal (lead 4K) are connected to an external gate control circuit, and the first input signal is input from the gate control circuit. The HINU terminal (lead 4E), HINV terminal (lead 4F), and HINW terminal (lead 4G) are connected to the gate control circuit (not shown), and a second input signal is input from the gate control circuit.

The first control element 8A includes a LINU terminal (lead 4Q), a LINV terminal (lead 4J), a LINW terminal (lead 4K), a second VCC terminal (lead 4L), an FO terminal (lead 4M), a CIN terminal (lead 4N), And it is electrically connected to the second GND terminal (lead 4R). Further, the first control element 8A is also electrically connected to the first GND terminal (lead 4H). The second VCC terminal is a terminal that supplies the power supply voltage VCC to the first control element 8A. A first input signal is input to the first control element 8A from the LINU terminal, LINV terminal, and LINW terminal. The first control element 8A generates the first drive signal (for example, gate voltage) based on the input first input signal. The generated first drive signal is then input to the gate (electrode 113) of each switching element 11A, 11B, 11C and the gate (electrode 123) of each switching element 12A, 12B, 12C.

The second control element 8B includes a VBU terminal (lead 4A), a VBV terminal (lead 4B), a VBW terminal (lead 4C), a HINU terminal (lead 4D), a HINV terminal (lead 4E), a HINW terminal (lead 4F), and a VBU terminal (lead 4B). It is electrically connected to the 1VCC terminal (lead 4G) and the first GND terminal (lead 4H). Further, the second control element 8B is also electrically connected to the second GND terminal (lead 4R). The first VCC terminal is a terminal that supplies the power supply voltage VCC to the second control element 8B. A second input signal is input to the second control element 8B from the HINU terminal, HINV terminal, and HIINW terminal. The second control element 8B generates the second drive signal (for example, gate voltage) based on the input second input signal. The generated second drive signal is then input to the gate (electrode 213) of each switching element 21A, 21B, 21C and the gate (electrode 223) of each switching element 22A, 22B, 22C.

In the example shown in FIG. 14, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) are connected inside the semiconductor device A1 and have the same potential. Unlike this configuration, the first GND terminal (lead 4H) and the second GND terminal (lead 4R) may be separated from each other inside the semiconductor device A1 and may have different potentials.

The functions and effects of the semiconductor device A1 are as follows.

The semiconductor device A1 includes at least one first switch section 1 and a first control element 8A. Each of the at least one first switch section 1 has a switching element 11 and a switching element 12. The first control element 8A is arranged on the y1 side in the y direction than the switching element 11 and the switching element 12, and the switching element 12 is arranged between the first control element 8A and the switching element 11 in the y direction. placed between. In such a positional relationship between the first control element 8A, the switching element 11, and the switching element 12, the first control element 8A and the switching element 11 are directly connected with one wire, and the first control element 8A and the switching element 12 are connected directly. If these are directly connected with one wire, the wire connected to the switching element 11 relatively far from the first control element 8A becomes long. The longer the wire is, the more likely it is that the wire will flow during formation of the mold resin (sealing member 7). Therefore, in the semiconductor device A1, the main surface wiring section 125 is provided in the switching element 12, the first control element 8A and the main surface wiring section 125 are connected with the wire 61G, and the main surface wiring section 125 and the switching element 11 are connected with the wire 61G. I configured it to connect at 62G. Thereby, each of the wires 61G and 62G becomes shorter than when the first control element 8A and the switching element 11 are directly connected with one wire. In other words, the semiconductor device A1 can suppress the wire flow of each of the wires 61G and 62G. Therefore, the semiconductor device A1 has a more preferable structure in which a plurality of switching elements (switching element 11 and switching element 12) are operated as one first switch section 1.

Regarding the wire flow described above, the same applies to the relationship between each of the switching elements 21 and 22 of the at least one second switch section 2 and the second control element 8B. That is, in the semiconductor device A1, the switching element 22 is provided with the main surface wiring section 225, the second control element 8B and the main surface wiring section 225 are connected with the wire 61Q, and the main surface wiring section 225 and the switching element 21 are connected with the wire 61Q. I configured it to connect with 62Q. Thereby, each wire 61Q, 62Q can be made shorter than when the second control element 8B and the switching element 21 are directly connected with one wire. In other words, the semiconductor device A1 can suppress the wire flow of each of the wires 61Q and 62Q. Therefore, the semiconductor device A1 has a more preferable structure in which a plurality of switching elements (switching element 21 and switching element 22) are operated as one second switch section 2.

In the semiconductor device A1, the switching element 11 and the switching element 12 in each first switch section 1 are of different types. There are different types of switching elements, such as IGBTs, MOSFETs, and bipolar transistors, and different types have different electrical characteristics. For example, it is known that MOSFETs and IGBTs exhibit the following electrical characteristics due to differences in physical properties and structures. For example, MOSFETs have faster switching speeds than IGBTs and lower switching losses than IGBTs. On the other hand, IGBTs have lower on-resistance than MOSFETs and lower steady-state losses than MOSFETs in large current ranges. Therefore, in the semiconductor device A1, the switching element 11 is configured with an IGBT, and the switching element 12 is configured with a MOSFET. During switching (turn-on and turn-off) of each first switch section 1, switching loss can be reduced by controlling so that a large amount of current flows through the switching element 12, and when each first switch section 1 is in a steady state, By controlling so that a large amount of current flows through the switching element 11, steady-state loss can be reduced. Therefore, the semiconductor device A1 in which the switching element 11 is configured with an IGBT and the switching element 12 is configured with a MOSFET can reduce both switching loss and steady loss, and reduce power loss. In other words, the semiconductor device A1 can improve conversion efficiency. In this way, if the switching element 11 and the switching element 12 are made of different types, they can be operated so as to complement each other's electrical characteristics, so a plurality of switching elements (switching element 11 and switching element 12) can be combined into one. This is preferable for operating as one first switch section 1. This also applies to the relationship between the switching elements 21 and 22 in each second switch section 2. That is, in the semiconductor device A1, it is preferable to use different types of the switching element 21 and the switching element 22 in order to operate the plurality of switching elements (switching element 21 and switching element 22) as one second switch section 2. . For example, if the switching element 21 is an IGBT and the switching element 22 is a MOSFET, both switching loss and steady loss can be reduced, and power loss can be reduced.

Other embodiments and modifications of the semiconductor device of the present disclosure will be described below. Note that the configurations of each part in each embodiment and each modification can be combined with each other within a range that does not cause technical contradiction.

15 to 19 show a semiconductor device A2 according to the second embodiment. As shown in these figures, the semiconductor device A2 includes a plurality of first switch sections 1, a plurality of second switch sections 2, a first control element 8A, a second control element 8B, and a plurality of electronic components 89U, 89V, 89W. , a plurality of leads 3A to 3G, 3Z, a plurality of leads 4A to 4H, 4J to 4N, 4P to 4R, a support substrate 51, a wiring pattern 52, a plurality of connection members 6, and a sealing member 7. That is, the semiconductor device A2 differs from the semiconductor device A1 mainly in that it further includes the wiring pattern 52.

The wiring pattern 52 is formed on the first surface 511 of the support substrate 51. The wiring pattern 52 is made of a conductive material. The wiring pattern 52 is covered with the sealing member 7. The wiring pattern 52 includes a plurality of wiring parts 52A to 52H, 52J to 52N, 52P to 52R, and a plurality of joint parts 53A to 53D.

A plurality of wiring portions 52A to 52H, 52J to 52N, and 52P to 52R are formed on the support substrate 51, respectively. In this embodiment, each wiring portion 52A to 52H, 52J to 52N, and 52P to 52R is formed on the first surface 511 of the support substrate 51. Each wiring portion 52A to 52H, 52J to 52N, and 52P to 52R is made of a conductive material. The conductive material constituting each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not particularly limited, but includes, for example, materials containing Ag, Cu, Au, and the like. In the following description, an example will be described in which each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R contains Ag. Note that each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Cu instead of Ag, or may contain Au instead of Ag or Cu. Alternatively, each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R may contain Ag-Pt or Ag-Pd. Further, the method of forming each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R is not limited, and may be formed, for example, by printing a paste containing these metals and then firing it.

Among the plurality of wiring parts 52A to 52H, 52J to 52N, and 52P to 52R, the wiring part 52H and the wiring part 52R are integrally formed, and the other parts are spaced apart from each other. Unlike this example, the wiring portion 52H and the wiring portion 52R may be spaced apart from each other.

As shown in FIG. 15, the wiring portion 52A, the wiring portion 52B, and the wiring portion 52C are arranged on the x1 side in the x direction with respect to the wiring portion 52D.

As shown in FIG. 15, a wire 6L connected to the second control element 8B and an electronic component 89U are joined to the wiring portion 52A. Further, the lead 4A is joined to the wiring portion 52A.

As shown in FIG. 15, the wire 6L and the electronic component 89V that are bonded to the second control element 8B are bonded to the wiring portion 52B. Further, the lead 4B is joined to the wiring portion 52B.

As shown in FIG. 15, the wire 6L and the electronic component 89W, which are bonded to the second control element 8B, are bonded to the wiring portion 52C. Further, the lead 4C is joined to the wiring portion 52C.

As shown in FIG. 15, the wiring portion 52D is arranged on the x2 side in the x direction than the wiring portion 52C. The wire 6L connected to the second control element 8B is connected to the wiring portion 52D. Furthermore, a lead 4D is joined to the wiring portion 52D.

As shown in FIG. 15, the plurality of wiring parts 52E, 52F, and 52G are arranged on the x2 side in the x direction with respect to the wiring part 52D. Wires 6L connected to the second control element 8B are connected to the plurality of wiring parts 52E, 52F, and 52G, respectively. Furthermore, as shown in FIG. 15, a corresponding one of the plurality of leads 4E, 4F, and 4G is connected to each of the plurality of wiring portions 52E, 52F, and 52G.

A second control element 8B is mounted on the wiring section 52H. Further, the lead 4H is joined to the wiring portion 52H. The wiring section 52H includes a pad section 521H, as shown in FIG. 15. The pad portion 521H is a portion of the wiring portion 52H to which the second control element 8B is bonded. The pad portion 521H has a rectangular shape in plan view.

The first control element 8A is mounted on the wiring section 52R. Further, the lead 4R is joined to the wiring portion 52R. The wiring section 52R includes a pad section 521R, as shown in FIG. 15. The pad portion 521R is a portion of the wiring portion 52R to which the first control element 8A is bonded. The pad portion 521R has a rectangular shape in plan view.

As shown in FIG. 15, the plurality of wiring parts 52Q, 52J, 52K, 52L, 52M, and 52N are arranged on the x2 side in the x direction with respect to the wiring part 52H. Wires 6L connected to the first control element 8A are connected to the plurality of wiring parts 52Q, 52J, 52K, 52L, 52M, and 52N, respectively. Further, as shown in FIG. 15, each of the plurality of wiring parts 52Q, 52J, 52K, 52L, 52M, and 52N has a corresponding one of the plurality of leads 4Q, 4J, 4K, 4L, 4M, and 4N. Joined.

As shown in FIG. 15, the lead 4P is joined to the wiring portion 52P. In this embodiment, the wire 6L is not joined to the wiring portion 52P.

As shown in FIG. 15, among the wiring portions 52A to 52H, 52J to 52N, 52P to 52R, the leads 4A to 4H, 4J to 4N, corresponding to the wiring portions 52A to 52H, 52J to 52N, 52P to 52R, The portion where 4P to 4R are bonded is arranged along the periphery of the support substrate 51 in plan view.

The plurality of joints 53A to 53D are each formed on the support substrate 51. As shown in FIG. 18, the respective joint portions 53A to 53D are formed on the first surface 511 of the support substrate 51, similarly to the respective wiring portions 52A to 52H, 52J to 52N, and 52P to 52R. As shown in FIG. 18, the joint 53A is arranged below the mounting parts 311A, 312A, 313A of the lead 3A (z2 side in the z direction), and the joint 53B is arranged below the mounting part 31B of the lead 3B. (z2 side in the z direction), the joint portion 53C is located below the mounting portion 31C of the lead 3C (z2 side in the z direction), and the joint portion 53D is located below the mounting portion 31D of the lead 3D (z z2 side). The constituent material of each of the bonding parts 53A to 53D is not particularly limited, and is made of a material that can bond the support substrate 51 and each of the leads 3A to 3D. Each joint 53A to 53D is made of, for example, a conductive material. The conductive material constituting each of the joints 53A to 53D is not particularly limited, but includes, for example, materials containing Ag, Cu, Au, and the like. Each of the joint portions 53A to 53D includes the same conductive material that constitutes each of the wiring portions 52A to 52H, 52J to 52N, and 52P to 52R. Note that each of the joint portions 53A to 53D may contain copper instead of silver, or may contain gold instead of silver or copper. Alternatively, each joint portion 53A to 53D may contain Ag-Pt or Ag-Pd. Further, the method of forming each of the joint parts 53A to 53D is not limited, and for example, similarly to each of the wiring parts 52A to 52H, 52J to 52N, and 52P to 52R, a paste containing these metals may be printed and then fired. It is formed. Note that the material of each joint 53A to 53D may not be electrically conductive. Furthermore, the wiring pattern 52 does not have to include each of the plurality of joints 53A to 53D.

In the semiconductor device A2, the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R are each connected to the wiring pattern 52. Also. Compared to the semiconductor device A1, the semiconductor device A2 further includes a lead 4Z.

As shown in FIG. 15, the plurality of leads 4A to 4H, 4J to 4N, and 4P to 4R are arranged on the x2 side in the x direction with respect to the lead 4Z. In the following, lead 4A will be described in detail, but other leads 4B to 4H, 4J to 4N, and 4P to 4R also include similar constituent parts. In this case, each component of lead 4A with "A" changed to "B" to "H", "J" to "N", "P" to "R", and each lead 4B to 4H, These are the constituent parts of 4J to 4N and 4P to 4R.

The lead 4A includes a terminal portion 42A, a connecting portion 44A, and a joining portion 46A, as shown in FIG. 15 and the like. The terminal portion 42A of the semiconductor device A2 is configured similarly to the terminal portion 42A of the semiconductor device A1. The connecting portion 44A connects the terminal portion 42A and the joint portion 46A. The bonding portions 46A are bonded to the wiring portions 52A via the conductive bonding material 49, respectively. Similarly, the bonding portions 46B (46C to 46H, 46J to 46N, 46P to 46R) are bonded to the wiring portions 52B (52C to 52H, 52J to 52N, 52P to 52R), respectively, via the conductive bonding material 49. Ru. The conductive bonding material 49 is, for example, solder, metal paste material, sintered metal, or the like. As shown in FIG. 19, a through hole 461C is formed in the joint portion 46C. Unlike this configuration, the through hole 461C does not need to be formed in the joint portion 46C. Further, although through holes are formed in the other joint portions 46A, 46B, 46D to 46H, 46J to 46N, and 46P to 46R, the through holes may not be formed.

The lead 4Z is arranged on the x1 side in the x direction with respect to the lead 4A. The lead 4Z is not electrically connected to any of the plurality of first switch sections 1, the plurality of second switch sections 2, the first control element 8A, and the second control element 8B. The lead 4Z includes a pad portion 43Z and a protruding portion 45Z, as shown in FIG. 15. The pad portion 43Z and the protruding portion 45Z are connected.

The pad portion 43Z is covered with the sealing member 7. As shown in FIG. 15, the pad portion 43Z does not overlap the support substrate 51 in plan view. The protruding portion 45Z extends from the pad portion 43Z toward the y1 side in the y direction, and protrudes from the sealing member 7, as shown in FIG.

The semiconductor device A2 according to this embodiment can also have the same functions and effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A2 has a more preferable structure in which a plurality of switching elements (switching element 11 and switching element 12) are operated as one first switch section 1.

The semiconductor device A2 includes a support substrate 51 and a wiring pattern 52 formed on the first surface 511. The wiring pattern 52 includes a plurality of wiring parts 52A to 52H, 52J to 52N, 52P to 52R, and the plurality of wiring parts 52A to 52H, 52J to 52N, 52P to 52R are connected to the first control element 8A and the second control element. 8B transmits a control signal (for example, the above-mentioned first input signal and the above-mentioned second input signal) for controlling the plurality of first switch sections 1 and the plurality of second switch sections 2, and the control signal of the control signal is Configure the transmission path. The plurality of wiring parts 52A to 52H, 52J to 52N, and 52P to 52R are formed by, for example, printing a paste containing Ag and then firing it. According to this configuration, it is possible to make the transmission path thinner and higher in density than, for example, when the transmission path of the control signal is configured using a metal lead frame. Therefore, the semiconductor device A2 can be highly integrated.

FIG. 20 shows a semiconductor device A21 according to a modification of the second embodiment. FIG. 20 is a cross-sectional view showing the semiconductor device A21, and corresponds to the cross-section shown in FIG. 19. The dimension in the z direction of the second control element 8B of the semiconductor device A21 is larger than the dimension in the z direction of the second control element 8B of the semiconductor device A2. Note that although FIG. 20 shows the relationship between the second control element 8B and the fifth arm 2B (switching element 21B, switching element 22B, and protection element 23B), the relationship between the second control element 8B and the fourth arm 2A The relationships between the second control element 8B and the sixth arm 2C may also be the same. Further, the relationship between the first control element 8A and each first switch section 1 (each of the first arm 1A, second arm 1B, and third arm 1C) may be the same.

In the semiconductor device A21, as shown in FIG. There is a difference in height in the z direction between Therefore, even if the thickness of the second control element 8B is larger than each thickness of the switching element 21B, the switching element 22B, and the protection element 23B, the element main surface 21a of the switching element 21B and the element main surface 22a of the switching element 22B The element main surface 23a of the protection element 23B and the upper surface (the surface facing the z1 side in the z direction) of the second control element 8B are at the same (or substantially the same) height.

The semiconductor device A21 also has the same functions and effects as the semiconductor device A2. In the semiconductor device A21, the element main surface 21a of the switching element 21, the element main surface 22a of the switching element 22, the element main surface 23a of the protection element 23, and the upper surface of the second control element 8B ( Since the wires 61Q, 62Q, 6J, and 6K are at the same (or substantially the same) height, the wires 61Q, 62Q, 6J, and 6K can be easily joined.

Note that in the semiconductor device A21, an example has been shown in which the switching element 21B, the switching element 22B, and the protection element 23B have the same (or approximately the same) thickness, but if these are different types, the thickness of each may be different. There are different things. In such a case, for example, if the thickness of the lead 3A (mounting portion 312A) is partially changed, the element main surface 21a of the switching element 21B, the element main surface 22a of the switching element 22B, and the element main surface 23a of the protection element 23B can be changed. It is possible to make the heights the same.

As understood from this modification, in the semiconductor device of the present disclosure, each thickness of the switching element 21, the switching element 22, and the protection element 23, and each thickness of the second control element 8B are different from each other. Good too. In this case, by adjusting the thickness or position of the lead 3A and the wiring portion 52H, the element main surface 21a of the switching element 21, the element main surface 22a of the switching element 22, the element main surface 23a of the protection element 23, and the second control It is possible to make the upper surface of the element 8B (the surface facing the z1 side in the z direction) the same (or substantially the same) height.

21 and 22 show a semiconductor device A3 according to the third embodiment. The semiconductor device A3 differs from the semiconductor device A2 in the following points. That is, as shown in FIGS. 21 and 22, the size of each switching element 11 in plan view and the size of each switching element 21 in plan view are each large.

As described above, each switching element 11 contains Si as a semiconductor material, and each switching element 12 contains SiC as a semiconductor material. In this configuration, when each switching element 11 and each switching element 12 have the same (or substantially the same) size in plan view, the on-resistance of the switching element 11 may be larger than the on-resistance of the switching element 12. Therefore, in the semiconductor device A3, as shown in FIG. 21, the planar view size of the switching element 11 is made larger than the planar view size of the switching element 11 of the semiconductor device A1. Due to the large size of the switching element 11 in plan view, the on-resistance of the switching element 11 becomes small, and the on-resistance has a characteristic value close to the on-resistance of the switching element 12. In the example shown in FIG. 21, the x-direction dimension of the switching element 11 remains the same (or approximately the same) as the x-direction dimension of the switching element 12, and the y-direction dimension of the switching element 11 is larger than the y-direction dimension of the switching element 12. It's also big. By enlarging the size of the switching element 11 in plan view in this manner, it is possible to suppress the generation of wasted space in each of the mounting portions 31B, 31C, and 31D.

Similarly, each switching element 21 contains Si as a semiconductor material, and each switching element 22 contains SiC as a semiconductor material. In this configuration, when each switching element 21 and each switching element 22 have the same (or substantially the same) size in plan view, the on-resistance of the switching element 21 may be larger than the on-resistance of the switching element 22. Therefore, in the semiconductor device A3, as shown in FIG. 22, the planar view size of the switching element 21 is made larger than the planar view size of the switching element 21 of the semiconductor device A1. Since the size of the switching element 21 in plan view is large in this way, the on-resistance of the switching element 21 becomes small, and the on-resistance has a characteristic value close to the on-resistance of the switching element 22. In the example shown in FIG. 22, the x-direction dimension of the switching element 21 remains the same (or approximately the same) as the x-direction dimension of the switching element 22, and the y-direction dimension of the switching element 21 is larger than the y-direction dimension of the switching element 22. It's also big. By enlarging the size of the switching element 21 in plan view in this manner, it is possible to suppress the generation of wasted space in each of the mounting portions 311A, 312A, and 313A.

The semiconductor device A3 according to the present embodiment also has the same functions and effects as the semiconductor device A1. Further, as understood from the present embodiment, the semiconductor device of the present disclosure is not limited to a configuration in which the switching element 11 and the switching element 12 have the same (or substantially the same) size in plan view; Also includes configurations with different visual sizes. This also applies to switching element 21 and switching element 22.

FIG. 23 shows a semiconductor device A31 according to a modification of the second embodiment. The semiconductor device A31 differs from the semiconductor device A3 in the following points. That is, in each of the first switch sections 1 (each of the first arm 1A, second arm 1B, and third arm 1C), the switching element 11 is arranged closer to the y1 side than the switching element 12 in the y direction. That is, the switching element 11 is located between the first control element 8A and the switching element 12 in the y direction. In this modification, the switching element 11 is an example of a "second switching element" as set forth in the claims, and the switching element 12 is an example of a "first switching element" as set forth in the claims. .

In the semiconductor device A31, each switching element 12 does not have the main surface wiring section 125. On the other hand, each switching element 11 has a main surface wiring section 115. Like the electrode 113, the main surface wiring section 115 is provided on the element main surface 11a. The main surface wiring section 115 is not electrically connected to the switching function section of the switching element 11 . The main surface wiring section 115 is configured similarly to the main surface wiring section 125 in the switching element 12 .

In the semiconductor device A31, the plurality of connection members 6 include a wire 6G instead of the two wires 61G and 62G, and include two wires 61H and 62H instead of the wire 6H. As shown in FIG. 23, the wire 6G is connected to the electrode 81 of the first control element 8A and the electrode 113 of the switching element 11, making them conductive. The wire 61H is joined to the electrode 81 of the first control element 8A and the main surface wiring portion 115 of the switching element 11, thereby making them conductive. The wire 62H is connected to the main surface wiring portion 115 of the switching element 11 and the electrode 123 of the switching element 12, thereby making them conductive.

The semiconductor device A31 also has the same functions and effects as the semiconductor device A3. Further, in the semiconductor device A31, each of the wires 6D, 6E, and 6F can be made shorter than in the semiconductor device A3.

Note that, in the semiconductor device A31, a configuration has been described in which the positional relationship between the switching element 11 and the switching element 12 is reversed in each first switch section 1 compared to the semiconductor device A3, but instead of this, Alternatively, in addition to this, the switching element 21 and the switching element 22 in each second switch section 2 (fourth arm 2A, fifth arm 2B, and sixth arm 2C) may also be configured in the same manner. In this case, each wire 6A, 6B, 6C can be shortened.

24 to 27 show a semiconductor device A4 according to the fourth embodiment. The semiconductor device A4 differs from the semiconductor device A1 in the following points. That is, as shown in FIGS. 24, 25, and 27, each first switch section 1 does not have the protection element 13. Further, as shown in FIGS. 24, 26, and 27, each second switch section 2 does not have the protection element 23.

The switching element 11 of each first switch section 1 is a reverse conduction IGBT, and as shown in FIG. 27, includes a switching function section and a diode function section. The switching function section operates as an IGBT, and the diode function section operates as a freewheeling diode. That is, each switching element 11 of this embodiment includes a diode function section (freewheeling diode). For example, each switching element 11 is formed by combining the switching element 11 and the protection element 13 of the semiconductor device A1 into one chip, and includes a diode function section (freewheeling diode). As shown in FIG. 27, in each switching element 11, the switching function section and the diode function section are electrically connected in antiparallel relationship.

Similarly, the switching element 21 of each second switch section 2 is a reverse conduction IGBT, and includes a switching function section and a diode function section, as shown in FIG. 27. The switching function section operates as an IGBT, and the diode function section operates as a freewheeling diode. That is, each switching element 21 of this embodiment includes a diode function section (freewheeling diode). For example, each switching element 21 is a single chip of the switching element 21 and the protection element 23 of the semiconductor device A1. As shown in FIG. 27, in each switching element 21, the switching function section and the diode function section are electrically connected in antiparallel relationship.

The semiconductor device A4 according to this embodiment also has the same functions and effects as the semiconductor device A1. For example, like the semiconductor device A1, the semiconductor device A4 has a more preferable structure in which a plurality of switching elements (switching element 11 and switching element 12) are operated as one first switch unit 1.

28 to 34 show other configuration examples of the main surface wiring section 125 (switching element 12). FIGS. 28 to 34 are enlarged plan views of main parts showing the main surface wiring section 125 (switching element 12) according to each modification. Although FIGS. 28 to 34 show examples in which the configuration of the switching element 12 is changed in the semiconductor device A1, the same configuration can be applied to the other semiconductor devices A2, A3, and A4. Further, although FIGS. 28 to 34 show other configuration examples of the main surface wiring section 125 of the switching element 12, the main surface wiring section 225 of the switching element 22 can also be configured in a similar manner.

In the example shown in FIG. 28, the dimension of the connecting portion 125c in the x direction is smaller than the dimensions of the first pad portion 125a and the second pad portion 125b in the x direction. With this configuration, as shown in FIG. 28, the main surface wiring portion 125 has a dumbbell shape in plan view. The main surface wiring section 125 shown in FIG. 28 has a smaller planar area compared to the main surface wiring section 125 in the semiconductor device A1, so that the manufacturing cost of the switching element 12 can be reduced.

In the example shown in FIG. 29, the second pad portion 125b is located on the x1 side in the x direction and on the y2 side in the y direction with respect to the first pad portion 125a. In the example shown in FIG. 29, the main surface wiring section 125 has a rectangular shape in which the first pad section 125a and the second pad section 125b are two diagonally located corners among the four corners when viewed from above. . In the main surface wiring section 125 shown in FIG. 29, the planar area is enlarged compared to the main surface wiring section 125 in the semiconductor device A1, so that the degree of freedom in the bonding position of each wire 61G, 62G is increased.

In the example shown in FIG. 30, the main surface wiring section 125 is arranged along a part of the periphery of the element main surface 12a in plan view, and has a band shape along the edge on the x2 side in the x direction. In the present disclosure, the periphery refers to the entire outer periphery of the object (for example, the outer periphery of the element main surface 12a in a plan view), and the edge refers to any part of the outer periphery of the object (for example, the outer periphery of the element main surface 12a in a plan view). It's about the area. In the main surface interconnection section 125, the connecting section 125c has a larger dimension in the y direction than the main surface interconnection section 125 in the semiconductor device A1. In the illustrated example, the main surface wiring section 125 straddles both sides of the element main surface 12a with the center in the y direction interposed therebetween. Further, the electrodes 122 are not arranged on both sides of the main surface wiring section 125 in the y direction. In the configuration shown in FIG. 30, the main surface wiring section 125 is also formed on the y2 side in the y direction of the element main surface 12a from the center in the y direction. Therefore, in the configuration shown in FIG. 30, the wire 62G can be further shortened compared to the semiconductor device A1. Further, in the configuration shown in FIG. 30, the main surface wiring section 125 is formed along the edge of the element main surface 12a on the x2 side in the x direction, so that an appropriate area of the electrode 122 in plan view can be secured. That is, in the configuration shown in FIG. 30, the main surface wiring portion 125 does not become an obstacle when joining the wires 6E (6D, 6F).

In the example shown in FIGS. 31 and 32, the position of the electrode 123 is changed from the example shown in FIG. 30. In the example shown in FIG. 30, the electrode 123 is arranged on the x2 side in the x direction of the device main surface 12a divided into three equal parts in the x direction. On the other hand, in the example shown in FIG. 31, the electrode 123 is arranged at the center of the element main surface 12a divided into three equal parts in the x direction, and in the example shown in FIG. is placed on the x1 side of the x-direction, which is divided into three equal parts in the x-direction. Even with these configurations, the same effects as the configuration shown in FIG. 30 can be achieved. Furthermore, in the configurations shown in FIGS. 31 and 32, the distance between the main surface wiring portion 125 and the electrode 123 can be increased compared to the configuration shown in FIG. 30. Thereby, the wire 61G joined to the main surface wiring part 125 and the wire 6H joined to the electrode 123 can be prevented from being unintentionally short-circuited.

In the example shown in FIG. 33, the main surface wiring section 125 is arranged at the center of the element main surface 12a divided into three equal parts in the x direction. As understood from this modification, in the semiconductor device of the present disclosure, the position of the main surface wiring section 125 can be changed as appropriate depending on the positional relationship with the first control element 8A and the switching element 11.

In the example shown in FIG. 34, the main surface wiring section 125 is arranged along a part of the periphery of the element main surface 12a in plan view. In the example shown in FIG. 34, the main surface wiring section 125 includes a first strip section 1251 and a second strip section 1252. The first strip portion 1251 and the second strip portion 1252 are integrally formed. The first strip portion 1251 extends along the edge of the element main surface 12a on the x2 side in the x direction in plan view. The first pad portion 125a is a part of the first strip portion 1251. The second strip portion 1252 extends along the edge of the element main surface 12a on the y2 side in the y direction in plan view. The second pad portion 125b is a part of the second strip portion 1252.

In each of the embodiments and modifications described above, a plurality of switching elements 11, a plurality of switching elements 12, a plurality of protection elements 13, a plurality of switching The surplus portion in which none of the element 21, the plurality of switching elements 22, and the plurality of protection elements 23 are mounted may be further reduced. Reducing the surplus portion in this way is preferable in reducing the planar view size of the semiconductor device.

The semiconductor device according to the present disclosure is not limited to the embodiments described above. The specific configuration of each part of the semiconductor device of the present disclosure can be modified in various ways. For example, the semiconductor device of the present disclosure includes embodiments related to the following additional notes.
Additional note 1.
at least one first switch section each including a first switching element and a second switching element;
a first control element that inputs a first drive signal to the first switching element and the second switching element;
a mounting section on which the first switching element and the second switching element are mounted;
a plurality of wires including a first wire, a second wire and a third wire;
Equipped with
In each of the at least one first switch section, the first switching element and the second switching element are electrically connected in parallel,
The first switching element has a first main surface facing one of the thickness directions of the mounting section, and a first control electrode disposed on the first main surface,
The second switching element has a second main surface facing one side in the thickness direction, a second control electrode and a main surface wiring section disposed on the second main surface,
the first wire is joined to the first control element and the main surface wiring section,
the second wire is joined to the main surface wiring section and the first control electrode,
the third wire is joined to the first control element and the second control electrode,
The first control element is arranged on one side of the first switching element and the second switching element in a first direction perpendicular to the thickness direction,
The semiconductor device, wherein the second switching element is arranged between the first control element and the first switching element in the first direction.
Appendix 2.
The semiconductor device according to appendix 1, wherein the main surface wiring section includes a first pad section to which the first wire is bonded and a second pad section to which the second wire is bonded.
Appendix 3.
The first pad portion and the second pad portion are arranged along the first direction when viewed in the thickness direction,
The semiconductor device according to appendix 2, wherein the first pad portion is located closer to the first control element than the second pad portion in the first direction.
Appendix 4.
The semiconductor device according to appendix 3, wherein the main surface wiring section includes a connecting section that connects the first pad section and the second pad section.
Appendix 5.
Supplementary note 4, wherein a dimension of the connecting portion in the thickness direction and a second direction perpendicular to the first direction is the same as a dimension of each of the first pad portion and the second pad portion in the second direction. The semiconductor device described in .
Appendix 6.
According to appendix 4, a dimension of the connecting portion in the thickness direction and a second direction perpendicular to the first direction is smaller than a dimension in the second direction of each of the first pad portion and the second pad portion. The semiconductor device described.
Appendix 7.
The second pad section is located on one side in the first direction with respect to the first pad section, and on the other side in a second direction perpendicular to the thickness direction and the first direction. , the semiconductor device according to appendix 2.
Appendix 8.
The second control electrode is located closer to the first control element in the first direction than the center of the second main surface in the first direction.
The semiconductor device according to any one of Supplementary notes 1 to 7.
Appendix 9.
In the second main surface, each of the second control electrode and the main surface wiring section is arranged at a central portion in a second direction perpendicular to the thickness direction and the first direction. Semiconductor equipment.
Appendix 10.
The semiconductor device according to appendix 8, wherein the main surface wiring section is arranged along a part of the periphery of the second main surface when viewed in the thickness direction.
Appendix 11.
11. The semiconductor device according to appendix 10, wherein the main surface wiring section has a band shape along one edge of the second main surface in the second direction when viewed in the thickness direction.
Appendix 12.
When viewed in the thickness direction, the main surface wiring portion includes a first band-shaped portion along one edge of the second main surface in the second direction, and a first band-shaped portion along one edge of the second main surface in the second direction; a second band-shaped portion along the other edge of the main surface in the first direction;
The semiconductor device according to appendix 10, wherein the first strip portion and the second strip portion are integrally formed.
Appendix 13.
The at least one first switch section includes a plurality of first switch sections,
The semiconductor device according to any one of appendices 1 to 12, wherein the plurality of first switch sections include a first arm, a second arm, and a third arm, each of which has a first switching element and a second switching element.
Appendix 14.
The first arm, the second arm, and the third arm are arranged in the thickness direction and a second direction perpendicular to the first direction,
The semiconductor device according to attachment 13, wherein the second arm is located between the first arm and the third arm in the second direction.
Appendix 15.
at least one second switch section each including a third switching element and a fourth switching element;
a second control element that inputs a second drive signal to the third switching element and the fourth switching element of each of the at least one second switch section;
Furthermore,
In each of the at least one second switch section, the third switching element and the fourth switching element are electrically connected in parallel,
The third switching element has a third main surface facing one side in the thickness direction, and a third control electrode disposed on the third main surface,
The fourth switching element has a fourth main surface facing one side in the thickness direction, a fourth control electrode and a second main surface wiring section disposed on the fourth main surface,
The plurality of wires include a fourth wire, a fifth wire, and a sixth wire,
the fourth wire is joined to the second control element and the second main surface wiring section,
the fifth wire is joined to the second main surface wiring section and the third control electrode,
the sixth wire is joined to the second control element and the fourth control electrode,
The second control element is arranged on one side in the first direction than the third switching element and the fourth switching element,
The semiconductor device according to attachment 13 or attachment 14, wherein the fourth switching element is arranged between the second control element and the third switching element in the first direction.
Appendix 16.
The at least one second switch section includes a plurality of second switch sections,
The plurality of second switch parts include a fourth arm, a fifth arm, and a sixth arm,
The fourth arm, the fifth arm, and the sixth arm are arranged in a second direction perpendicular to the thickness direction and the first direction,
The semiconductor device according to appendix 15, wherein the fifth arm is located between the fourth arm and the sixth arm in the second direction.
Appendix 17.
The first arm is a lower arm, the fourth arm is an upper arm, and the first arm and the fourth arm are electrically connected in series to constitute a first phase of a three-phase AC circuit,
The second arm is a lower arm, the fifth arm is an upper arm, and the second arm and the fifth arm are electrically connected in series to constitute a second phase of the three-phase AC circuit,
The third arm is a lower arm, and the sixth arm is an upper arm, and the third arm and the sixth arm are electrically connected in series to constitute a third phase of the three-phase AC circuit. The semiconductor device according to appendix 16.

A1, A2, A21, A3, A31, A4: Semiconductor device 10U: First phase 10V: Second phase 10W: Third phase 1: First switch section 1A: First arm 1B: Second arm 1C: Third arm 11, 11A, 11B, 11C: Switching element 11a: Element main surface 11b: Element back surface 111, 112, 113: Electrode 12, 12A, 12B, 12C: Switching element 12a: Element main surface 12b: Element back surface 121, 122, 123 : Electrodes 115, 125: Main surface wiring part 125a: First pad part 125b: Second pad part 125c: Connecting part 1251: First strip part 1252: Second strip part 13, 13A, 13B, 13C: Protective element 13a: Element main surface 13b: Element back surface 131, 132: Electrode 19: Conductive bonding material 2: Second switch part 2A: Fourth arm 2B: Fifth arm 2C: Sixth arm 21, 21A, 21B, 21C: Switching element 21a : Element main surface 21b: Element back surface 211, 212, 213: Electrode 225: Main surface wiring part 225a: Third pad part 225b: Fourth pad part 225c: Connection part 22, 22A, 22B, 22C: Switching element 22a: Element Main surface 22b: Element back surface 221, 222, 223: Electrode 23, 23A, 23B, 23C: Protective element 23a: Element main surface 23b: Element back surface 231, 232: Electrode 29: Conductive bonding material 3A to 3G, 3Z: Lead 301 to 306: Edges 311A, 312A, 313A, 31B to 31D: Mounting parts 32A to 32G, 32Z: Terminal parts 33A to 33G, 33Z: Pad parts 34A to 34D: Connecting parts 39: Bonding materials 4A to 4H, 4J to 4N, 4P to 4R, 4Z: Leads 41H, 41R: Mounting parts 42A to 42H, 42J to 42N, 42P to 42R: Terminal parts 43A to 43H, 43J to 43N, 43P to 43R, 43Z: Pad parts 44A to 44H, 44J ~44N, 44P~44R: Connecting portion 45H: Protruding portion 45Z: Protruding portion 46A~46H, 46J~46N, 46P~46R: Joint portion 461C: Through hole 49: Conductive bonding material 51: Support substrate 511: First surface 512: Second surface 513: Third surface 514: Fourth surface 515: Fifth surface 516: Sixth surface 52: Wiring patterns 52A to 52H, 52J to 52N, 52P to 52R: Wiring portions 521H, 521R: Pad portions 53A ~53D: Joint portion 6: Connection member 6A~6H, 6J~6L: Wire 61G, 61H, 61Q, 62G, 62H, 62Q: Wire 7: Sealing member 71: Resin main surface 72: Resin back surface 73~76: Resin Side surfaces 731, 741, 761: Recessed portion 8A: First control element 8B: Second control element 81, 82, 83: Electrode 85: Bonding material 89U, 89V, 89W: Electronic component 891: Conductive bonding material

Claims (17)

1. at least one first switch section each including a first switching element and a second switching element;
   a first control element that inputs a first drive signal to the first switching element and the second switching element;
   a mounting section on which the first switching element and the second switching element are mounted;
   a plurality of wires including a first wire, a second wire and a third wire;
   Equipped with
   In each of the at least one first switch section, the first switching element and the second switching element are electrically connected in parallel,
   The first switching element has a first main surface facing one of the thickness directions of the mounting section, and a first control electrode disposed on the first main surface,
   The second switching element has a second main surface facing one side in the thickness direction, a second control electrode and a main surface wiring section disposed on the second main surface,
   the first wire is joined to the first control element and the main surface wiring section,
   the second wire is joined to the main surface wiring section and the first control electrode,
   the third wire is joined to the first control element and the second control electrode,
   The first control element is arranged on one side of the first switching element and the second switching element in a first direction perpendicular to the thickness direction,
   The second switching element is arranged between the first control element and the first switching element in the first direction.
   Semiconductor equipment.
2. The main surface wiring section includes a first pad section to which the first wire is bonded and a second pad section to which the second wire is bonded.
   The semiconductor device according to claim 1.
3. The first pad portion and the second pad portion are arranged along the first direction when viewed in the thickness direction,
   The first pad portion is located closer to the first control element than the second pad portion in the first direction.
   The semiconductor device according to claim 2.
4. The main surface wiring section includes a connecting section that connects the first pad section and the second pad section.
   The semiconductor device according to claim 3.
5. A dimension of the connecting portion in the thickness direction and a second direction perpendicular to the first direction is the same as a dimension of each of the first pad portion and the second pad portion in the second direction.
   The semiconductor device according to claim 4.
6. A dimension of the connecting portion in the thickness direction and a second direction perpendicular to the first direction is smaller than a dimension of each of the first pad portion and the second pad portion in the second direction.
   The semiconductor device according to claim 4.
7. The second pad section is located on one side in the first direction with respect to the first pad section, and on the other side in a second direction perpendicular to the thickness direction and the first direction. ,
   The semiconductor device according to claim 2.
8. The second control electrode is located closer to the first control element in the first direction than the center of the second main surface in the first direction.
   A semiconductor device according to any one of claims 1 to 7.
9. In the second main surface, each of the second control electrode and the main surface wiring section is arranged at a central portion in a second direction perpendicular to the thickness direction and the first direction.
   The semiconductor device according to claim 8.
10. The main surface wiring section is arranged along a part of the periphery of the second main surface when viewed in the thickness direction.
    The semiconductor device according to claim 8.
11. When viewed in the thickness direction, the main surface wiring portion has a band shape along one edge of the second main surface in a second direction perpendicular to the thickness direction and the first direction.
    The semiconductor device according to claim 10.
12. The main surface wiring portion includes a first band-shaped portion along one edge of the second main surface in a second direction perpendicular to the thickness direction and the first direction, when viewed in the thickness direction; a second band-shaped portion along the other edge of the second main surface in the first direction when viewed in the thickness direction;
    The first belt-shaped part and the second belt-shaped part are integrally formed,
    The semiconductor device according to claim 10.
13. The at least one first switch section includes a plurality of first switch sections,
    The plurality of first switch parts each include a first arm, a second arm, and a third arm, each having a first switching element and a second switching element.
    A semiconductor device according to any one of claims 1 to 12.
14. The first arm, the second arm, and the third arm are arranged in the thickness direction and a second direction perpendicular to the first direction,
    the second arm is located between the first arm and the third arm in the second direction;
    The semiconductor device according to claim 13.
15. at least one second switch section each including a third switching element and a fourth switching element;
    a second control element that inputs a second drive signal to the third switching element and the fourth switching element of each of the at least one second switch section;
    Furthermore,
    In each of the at least one second switch section, the third switching element and the fourth switching element are electrically connected in parallel,
    The third switching element has a third main surface facing one side in the thickness direction, and a third control electrode disposed on the third main surface,
    The fourth switching element has a fourth main surface facing one side in the thickness direction, a fourth control electrode and a second main surface wiring section disposed on the fourth main surface,
    The plurality of wires include a fourth wire, a fifth wire, and a sixth wire,
    the fourth wire is joined to the second control element and the second main surface wiring section,
    the fifth wire is joined to the second main surface wiring section and the third control electrode,
    the sixth wire is joined to the second control element and the fourth control electrode,
    The second control element is arranged on one side in the first direction than the third switching element and the fourth switching element,
    The fourth switching element is arranged between the second control element and the third switching element in the first direction.
    The semiconductor device according to claim 13 or 14.
16. The at least one second switch section includes a plurality of second switch sections,
    The plurality of second switch parts include a fourth arm, a fifth arm, and a sixth arm,
    The fourth arm, the fifth arm, and the sixth arm are arranged in a second direction perpendicular to the thickness direction and the first direction,
    The fifth arm is located between the fourth arm and the sixth arm in the second direction.
    The semiconductor device according to claim 15.
17. The first arm is a lower arm, the fourth arm is an upper arm, and the first arm and the fourth arm are electrically connected in series to form a first phase of a three-phase AC circuit,
    The second arm is a lower arm, the fifth arm is an upper arm, and the second arm and the fifth arm are electrically connected in series to constitute a second phase of the three-phase AC circuit,
    The third arm is a lower arm, and the sixth arm is an upper arm, and the third arm and the sixth arm are electrically connected in series to constitute a third phase of the three-phase AC circuit.
    The semiconductor device according to claim 16.

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