WO2023223778A1

WO2023223778A1 - Member for forming wiring, laminated film for forming wiring, and method for manufacturing semiconductor device

Info

Publication number: WO2023223778A1
Application number: PCT/JP2023/016236
Authority: WO
Inventors: 裕紀子井上; 哲也榎本; 笑宮澤; 雄太赤須
Original assignee: 株式会社レゾナック
Priority date: 2022-05-19
Filing date: 2023-04-25
Publication date: 2023-11-23
Also published as: JP2023170412A

Abstract

Provided is a member for forming wiring. This member for forming wiring comprises a support member, a first metal layer, a first resin layer, and a second metal layer in this order. The first resin layer contains a first curable resin composition or a cured product thereof.

Description

Wiring forming member, wiring forming laminated film, and semiconductor device manufacturing method

The present disclosure relates to a member for forming wiring, a laminated film for forming wiring, and a method for manufacturing a semiconductor device.

FO-WLP (Fan-Out Wafer Level Packaging) is known as one of the advanced packages that can be mounted at high density. The FO-WLP is a package having a structure in which a fine redistribution layer (RDL) formed on a chip is extended outside the outer shape of the chip. The FO-WLP assembly process can be roughly divided into two. One method is to first mount a chip and then form a rewiring layer, which is called the Chip First method. The other method is to first form a redistribution layer and then mount the chip, which is called the RDL-First (Redistribution Layer-First) method.

In recent years, progress has been made in the development of wiring forming members suitable for use in the manufacturing process of packages (semiconductor members with wiring layers) using the RDL-First method. For example, Patent Document 1 discloses a carrier-attached copper foil (wiring forming member) that includes a carrier (supporting member), a nickel alloy layer, a carbon layer, and an ultra-thin copper layer.

Japanese Patent Application Publication No. 2017-114070

In the manufacturing process of a semiconductor member with a wiring layer using the RDL-First method, a metal layer on the outermost surface of a support member is processed to form a wiring layer (rewiring layer), or a wiring layer (rewiring layer) is formed on the metal layer. It is necessary to separate the support member and the semiconductor member with a wiring layer after providing a rewiring layer) and, if necessary, mounting a semiconductor chip and producing a package (semiconductor member with a wiring layer). However, in the conventional wiring forming member, it is not easy to separate the supporting member and the semiconductor member with a wiring layer, and there is a need for improvement in this point.

Therefore, it is an object of the present disclosure to provide a wiring forming member that can be used in the manufacturing process of a semiconductor member with a wiring layer and that can easily separate a supporting member and a semiconductor member with a wiring layer. Main purpose.

One aspect of the present disclosure relates to a wiring forming member. The wiring forming member includes a support member, a first metal layer, a first resin layer, and a second metal layer in this order. The first resin layer contains a first curable resin composition or a cured product thereof. The wiring forming member may further include a second resin layer between the supporting member and the first metal layer. In this case, the second resin layer contains the second curable resin composition or a cured product thereof. According to such a wiring forming member, it can be suitably used in the manufacturing process of a package (semiconductor member with a wiring layer), and by irradiating light containing at least infrared light from the supporting member side, It becomes possible to easily separate the support member and the semiconductor member with a wiring layer.

Another aspect of the present disclosure relates to a laminated film for forming wiring. The laminated film for wiring formation includes a first metal layer, a first curable resin layer containing a first curable resin composition provided on one surface of the first metal layer, a second curable resin layer containing a second curable resin composition provided on the other surface of the first metal layer; and a first metal layer of the first curable resin layer. and a second metal layer provided on the opposite surface.

Another aspect of the present disclosure relates to a method for manufacturing a semiconductor device. One embodiment of the method for manufacturing the semiconductor device includes the steps of preparing the above wiring forming member, processing the second metal layer to form the wiring layer, and arranging the semiconductor member on the wiring layer. , a step of manufacturing a laminate including a semiconductor member with a wiring layer; and a step of separating the members. Another embodiment of the method for manufacturing the semiconductor device includes the steps of preparing the above wiring forming member, forming a wiring layer on the second metal layer, arranging the semiconductor member on the wiring layer, A step of manufacturing a laminate including a semiconductor member with a wiring layer, and irradiating a first metal layer of the laminate with light containing at least infrared light from the side of the support member to produce the support member and the semiconductor member with the wiring layer. and a step of separating the.

According to the present disclosure, there is provided a wiring forming member that can be used in the manufacturing process of a semiconductor member with a wiring layer and that can easily separate a supporting member and a semiconductor member with a wiring layer. Further, according to the present disclosure, a laminated film for wiring formation useful for forming such a member for wiring formation is provided. Furthermore, according to the present disclosure, a method of manufacturing a semiconductor device using such a wiring forming member is provided.

FIGS. 1A and 1B are schematic cross-sectional views showing one embodiment of a wiring forming member. FIG. 2 is a schematic cross-sectional view showing one embodiment of a laminated film for wiring formation. FIG. 3 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 3(a), (b), and (c) are schematic cross-sectional views showing each step. FIG. 4 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIGS. 4(a), (b), (c), and (d) are schematic cross-sectional views showing each step. It is a diagram. FIG. 5 is a schematic cross-sectional view for explaining another embodiment of the method for manufacturing a semiconductor device, and FIGS. 5(a), (b), and (c) are schematic cross-sectional views showing each process. . FIG. 6 is a schematic cross-sectional view for explaining another embodiment of the method for manufacturing a semiconductor device, and FIGS. 6(a), (b), (c), (d), and (e) each It is a schematic cross-sectional view showing a process.

Hereinafter, embodiments of the present disclosure will be described with appropriate reference to the drawings. However, the present disclosure is not limited to the following embodiments. In the following embodiments, the constituent elements (including steps, etc.) are not essential unless otherwise specified. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

The same applies to the numerical values and their ranges in the present disclosure, and they do not limit the present disclosure. In this specification, a numerical range indicated using "-" indicates a range that includes the numerical values written before and after "-" as the minimum and maximum values, respectively. In the numerical ranges described step by step in this specification, the upper limit value or lower limit value described in one numerical range may be replaced with the upper limit value or lower limit value of another numerical range described step by step. good. Further, in the numerical ranges described in this specification, the upper limit or lower limit of the numerical range may be replaced with the value shown in the Examples.

In this specification, the term "layer" includes a structure that is formed on the entire surface as well as a structure that is formed on a part of the layer when observed as a plan view. In addition, in this specification, the term "process" does not only refer to an independent process, but also refers to a process that cannot be clearly distinguished from other processes, as long as the intended effect of the process is achieved. included.

As used herein, (meth)acrylate means acrylate or a methacrylate corresponding thereto. The same applies to other similar expressions such as (meth)acryloyl group and (meth)acrylic copolymer.

In this specification, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more within the range applicable to the conditions. When there are multiple substances corresponding to each component, the content of each component means the total amount of the multiple substances, unless otherwise specified.

[Member for wiring formation and laminated film for wiring formation]
FIGS. 1A and 1B are schematic cross-sectional views showing one embodiment of a wiring forming member. The wiring forming member 10A shown in FIG. 1(a) includes a support member 1, a first metal layer 3a, a first resin layer 5a, and a second metal layer 3b in this order.

The support member 1 is a plate-shaped body that has high transmittance and can withstand the load received during wiring formation. Examples of the support member 1 include an inorganic glass substrate, a transparent resin substrate, and the like.

The thickness of the support member 1 may be, for example, 0.1 to 2.0 mm. When the thickness of the support member 1 is 0.1 mm or more, handling tends to be easier. When the thickness of the support member 1 is 2.0 mm or less, material costs tend to be suppressed.

The first metal layer 3a is a layer that absorbs light including infrared light and generates heat. The metal constituting the first metal layer 3a is not particularly limited as long as it absorbs light including infrared light and generates heat. Examples of such metals include metals such as chromium, copper, titanium, silver, platinum, and gold, alloys such as nickel-chromium, stainless steel, and copper-zinc, indium tin oxide (ITO), zinc oxide, and niobium oxide. Examples include metal oxides such as. Among these, the metal constituting the first metal layer 3a may be chromium, titanium, copper, aluminum, silver, gold, or platinum.

The first metal layer 3a may be composed of multiple metal layers. Such a first metal layer 3a may include, for example, a layer including a metal layer (1) and a metal layer (2) in this order from the support member 1. The metal constituting the metal layer (1) may be titanium from the viewpoints of adhesion with the supporting member, film formability, thermal conductivity, low heat capacity, and the like. The metal constituting the metal layer (2) may be copper, aluminum, silver, gold, or platinum, or may be copper or aluminum, from the viewpoint of high expansion coefficient, high thermal conductivity, etc.

The first metal layer 3a may be a metal layer formed using metal foil, or a metal layer formed by physical vapor deposition (PVD) such as vacuum evaporation or sputtering. The first metal layer 3a is preferably a metal layer formed by PVD from the viewpoint of adhesion to the support member.

The thickness of the first metal layer 3a may be 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm (0.05 to 3 μm) from the viewpoint of easy peelability. When the first metal layer 3a is a layer composed of a metal layer (1) and a metal layer (2), the thickness of the metal layer (1) is 1 to 1000 nm (0.001 to 1 μm), 5 ~500 nm (0.005-0.5 μm), or 10-100 nm (0.01-0.1 μm), and the thickness of the metal layer (2) is 1-5000 nm (0.001-5 μm) , 10 to 500 nm (0.01 to 0.5 μm), or 50 to 200 nm (0.05 to 0.2 μm).

The first resin layer 5a contains a first curable resin composition or a cured product thereof. The first curable resin composition may be a curable resin composition that is cured by heat or light. That is, the first resin layer 5a may be at least partially cured, go through a semi-cured (B stage) state, and then be able to become a cured (C stage) state by heat treatment.

The B stage is an intermediate stage in the reaction of certain thermosetting resins, where the material swells when in contact with certain liquids and softens when heated, but does not completely dissolve or melt. C-stage refers to the final stage in the reaction of certain thermosetting resins, when the material becomes virtually insoluble and infusible.

In one embodiment, the first curable resin composition includes a thermoplastic resin and a thermosetting resin. At this time, the first curable resin composition may further contain a curing accelerator, a polymerizable monomer, a polymerization initiator, and other components.

The thermoplastic resin may be a thermoplastic resin, or a resin that has thermoplasticity at least in an uncured state and forms a crosslinked structure after heating. Examples of the thermoplastic resin include hydrocarbon resin, polycarbonate, polyphenylene sulfide, polyether sulfone, polyetherimide, polyimide, petroleum resin, and novolac resin. These may be used alone or in combination of two or more. Among these, the thermoplastic resin may be a hydrocarbon resin.

Hydrocarbon resin is a resin whose main skeleton is composed of hydrocarbon. Examples of such hydrocarbon resins include ethylene/propylene copolymer, ethylene/1-butene copolymer, ethylene/propylene/1-butene copolymer elastomer, ethylene/1-hexene copolymer, and ethylene/1-hexene copolymer. 1-octene copolymer, ethylene/styrene copolymer, ethylene/norbornene copolymer, propylene/1-butene copolymer, ethylene/propylene/non-conjugated diene copolymer, ethylene/1-butene/non-conjugated diene copolymer Copolymer, ethylene/propylene/1-butene/non-conjugated diene copolymer, polyisoprene, polybutadiene, styrene/butadiene/styrene block copolymer (SBS), styrene/isoprene/styrene block copolymer (SIS), Examples include styrene/ethylene/butylene/styrene block copolymer (SEBS), styrene/ethylene/propylene/styrene block copolymer (SEPS), and the like. These hydrocarbon resins may be subjected to hydrogenation treatment. Further, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may include a hydrocarbon resin containing monomer units derived from styrene (styrenic resin), and may include a styrene-ethylene-butylene-styrene block copolymer (SEBS). Good too.

The Tg of the thermoplastic resin may be -100 to 500°C, -50 to 300°C, or -50 to 50°C. When the Tg of the thermoplastic resin is 500° C. or lower, when a film-like temporary fixing material is formed, flexibility is easily ensured and low-temperature adhesion properties tend to be improved. When the Tg of the thermoplastic resin is −100° C. or higher, when a film-like temporary fixing material is formed, it tends to be possible to suppress deterioration in handleability and releasability due to excessive flexibility.

The Tg of a thermoplastic resin is the midpoint glass transition temperature value obtained by differential scanning calorimetry (DSC). Specifically, the Tg of the thermoplastic resin is determined by measuring the change in heat value under the conditions of a temperature increase rate of 10°C/min and a measurement temperature of -80 to 80°C, and is calculated by a method based on JIS K 7121. is the transition temperature.

The weight average molecular weight (Mw) of the thermoplastic resin may be 10,000 to 5 million or 100,000 to 2 million. When the weight average molecular weight is 10,000 or more, it tends to be easier to ensure the heat resistance of the resin layer. When the weight average molecular weight is 5,000,000 or less, when a film-like resin layer is formed, a decrease in flow and adhesiveness tends to be easily suppressed. Note that the weight average molecular weight is a polystyrene equivalent value obtained by gel permeation chromatography (GPC) using a standard polystyrene calibration curve.

The content of the thermoplastic resin may be 40 to 90 parts by mass based on 100 parts by mass of the first curable resin composition. The content of the thermoplastic resin may be 50 parts by mass or more or 60 parts by mass or more, and 85 parts by mass or less or 80 parts by mass or less, based on 100 parts by mass of the total amount of the first curable resin composition. It's okay. When the content of the thermoplastic resin is within the above range, the resin layer tends to have better thin film forming properties and flatness.

Thermosetting resin means a resin that is cured by heat, and is a concept that does not include the above-mentioned hydrocarbon resins. Examples of the thermosetting resin include epoxy resin, acrylic resin, silicone resin, phenol resin, thermosetting polyimide resin, polyurethane resin, melamine resin, and urea resin. These may be used alone or in combination of two or more. Among these, the thermosetting resin may be an epoxy resin because it is superior in heat resistance, workability, and reliability. The thermosetting resin may be used in combination with a thermosetting resin curing agent (when an epoxy resin is used as the thermosetting resin, an epoxy resin curing agent).

The epoxy resin is not particularly limited as long as it hardens and has heat resistance. Examples of epoxy resins include bifunctional epoxy resins such as bisphenol A epoxy, phenol novolak epoxy resins, novolak epoxy resins such as cresol novolac epoxy resins, and alicyclic epoxy resins such as dicyclopentadiene epoxy resins. can be mentioned. Further, the epoxy resin may be, for example, a polyfunctional epoxy resin, a glycidylamine type epoxy resin, or a heterocycle-containing epoxy resin. Among these, the epoxy resin may include an alicyclic epoxy resin from the viewpoint of heat resistance and weather resistance.

When using an epoxy resin as the thermosetting resin, the first curable resin composition may contain an epoxy resin curing agent. As the epoxy resin curing agent, commonly used known curing agents can be used. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols having two or more phenolic hydroxyl groups in one molecule, such as bisphenol A type, bisphenol F type, and bisphenol S type. , phenol novolak resin, bisphenol A type novolak resin, cresol novolak resin, phenol aralkyl resin, and the like.

The total content of the thermosetting resin and thermosetting resin curing agent may be 10 to 60 parts by mass based on 100 parts by mass of the total amount of the first curable resin composition. The total content of the thermosetting resin and the thermosetting resin curing agent may be 15 parts by mass or more or 20 parts by mass or more with respect to 100 parts by mass of the total amount of the first curable resin composition, It may be 50 parts by mass or less or 40 parts by mass or less. When the total content of the thermosetting resin and the thermosetting resin curing agent is within the above range, the resin layer tends to have better thin film forming properties, flatness, heat resistance, etc.

The first curable resin composition may further contain a curing accelerator. Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, 1,8-diazabicyclo[5, 4,0] undecene-7-tetraphenylborate and the like. These may be used alone or in combination of two or more.

The content of the curing accelerator may be 0.01 to 5 parts by mass based on 100 parts by mass of the total amount of the thermosetting resin and thermosetting resin curing agent. When the content of the curing accelerator is within the above range, the curability tends to improve and the heat resistance tends to be better.

The first curable resin composition may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it can be polymerized by heating or irradiation with ultraviolet light or the like. The polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group from the viewpoint of material selectivity and availability. Examples of the polymerizable monomer include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinylpyridine, vinylamide, and arylated vinyl. Among these, the polymerizable monomer may be (meth)acrylate. The (meth)acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or more functional, but from the viewpoint of obtaining sufficient curability, it may be a difunctional or more functional (meth)acrylate. good.

The content of the polymerizable monomer may be 1 to 60 parts by mass based on 100 parts by mass of the total amount of the first curable resin composition.

The polymerization initiator is not particularly limited as long as it can initiate polymerization by heating or irradiation with ultraviolet light or the like. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

The content of the polymerization initiator may be 0.01 to 5 parts by weight based on 100 parts by weight of the total amount of polymerizable monomers.

The first curable resin composition may further contain other components such as an insulating filler, a sensitizer, and an antioxidant.

An insulating filler may be added for the purpose of imparting low thermal expansion and low hygroscopicity to the resin layer. Examples of the insulating filler include nonmetallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. These insulating fillers may be used alone or in combination of two or more. From the viewpoint of dispersibility with a solvent, the insulating filler may be a particle whose surface is treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

The content of the insulating filler may be 5 to 20 parts by mass based on 100 parts by mass of the first curable resin composition. When the content of the insulating filler is within the above range, heat resistance tends to be further improved without interfering with light transmission. Furthermore, when the content of the insulating filler is within the above range, it may also contribute to easy releasability.

Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthene-9-one, 2-isopropyl-9H-thioxanthene-9-one, 4- Examples include isopropyl-9H-thioxanthene-9-one and 1-chloro-4-propoxythioxanthone.

The content of the sensitizer may be 0.01 to 10 parts by mass based on 100 parts by mass of the first curable resin composition. When the content of the sensitizer is within the above range, it tends to have little influence on the properties and thin film properties of the first curable resin composition.

Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, and 2,2,6,6-tetramethylpiperidine. Examples include aminoxyl derivatives such as 1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidin-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

The content of the antioxidant may be 0.1 to 10 parts by mass based on 100 parts by mass of the first curable resin composition. When the content of the antioxidant is within the above range, the decomposition of the thermoplastic resin and the thermosetting resin tends to be suppressed and contamination can be prevented.

The cured product of the first curable resin composition can be obtained by thermally curing (or photocuring) the first curable resin composition. The heat curing conditions may be, for example, 300° C. or lower or 100 to 250° C. for 1 to 180 minutes or 1 to 120 minutes.

The first curable resin composition and its cured product may be the main components of the first resin layer 5a. The total content of the first curable resin composition and its cured product is 80% by mass or more, 85% by mass or more, 90% by mass or more, 95% by mass or more, based on the total amount of the first resin layer 5a. , or 100% by mass. The first resin layer 5a may be made of a first curable resin composition and a cured product thereof.

The thickness of the first resin layer 5a may be, for example, 200 μm or less from the viewpoint of stress relaxation. The thickness of the first resin layer 5a may be 1 to 150 μm or 10 to 100 μm.

The second metal layer 3b is a layer that is processed to become a wiring layer or a layer that becomes a base for plating, etc. The metal constituting the second metal layer 3b may be copper or titanium, or may be copper.

The second metal layer 3b may be a metal layer formed using metal foil, or a metal layer formed by physical vapor deposition (PVD) such as vacuum evaporation or sputtering. The metal foil may be copper foil or titanium foil, or may be copper foil.

When the second metal layer 3b is a metal layer formed from metal foil, the thickness of the second metal layer 3b is 1 to 40 μm, 3 to 35 μm, or 5 to 30 μm from the viewpoint of handleability. It's fine. When the second metal layer 3b is a metal layer formed by PVD, the thickness of the second metal layer 3b is 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm ( 0.05 to 3 μm).

The method of manufacturing the wiring forming member 10A shown in FIG. 1(a) is not particularly limited as long as a member having a predetermined configuration can be obtained. The wiring forming member 10A includes, for example, a step of providing the first metal layer 3a on the support member 1 (step 1A) and a step of providing the first resin layer 5a on the first metal layer 3a (step 1B). and a step of providing the second metal layer 3b on the first resin layer 5a (step 1C).

(Step 1A)
The first metal layer 3a can be provided on the support member 1 by performing physical vapor deposition (PVD) such as vacuum deposition or sputtering. The first metal layer 3a can also be provided on the support member 1 by electrolytic plating or electroless plating. According to physical vapor deposition, even if the support member 1 has a large area, the first metal layer 3a covering the surface of the support member 1 can be efficiently formed.

(Process 1B)
Examples of the method for providing the first resin layer 5a on the first metal layer 3a include the following method. First, each component of the first curable resin composition is dissolved or dispersed by stirring, kneading, etc. in a solvent to form a first resin varnish containing the first curable resin composition. Prepare. Next, the first resin varnish is applied onto the release-treated support film using a knife coater, roll coater, applicator, comma coater, die coater, etc., and then the solvent is evaporated by heating to form the support film. A first resin film is formed on the film. At this time, the thickness of the first resin film (first resin layer 5a) can be adjusted by adjusting the coating amount of the first resin varnish. The thickness of the first resin film may be the same as the thickness of the first resin layer 5a described above. Next, the first resin layer 5a can be provided by attaching the obtained first resin film (first resin layer 5a) to the first metal layer 3a.

The solvent used in the first resin varnish is not particularly limited as long as it has the property of uniformly dissolving or dispersing each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; tetrahydrofuran, 1,4- Cyclic ethers such as dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone; methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, etc. carbonate esters such as ethylene carbonate and propylene carbonate; amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These solvents may be used alone or in combination of two or more. The concentration of solid components in the varnish may be from 10 to 80% by weight, based on the total weight of the varnish.

Stirring or kneading during the preparation of the first resin varnish can be carried out using, for example, a stirrer, a miller, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like.

Examples of supporting films include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyether sulfide, and polyether. Examples include sulfone, polyether ketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer films. The thickness of the support film may be, for example, from 1 to 250 μm.

The heating conditions for volatilizing the solvent from the first resin varnish applied to the support film can be appropriately set according to the type of solvent used, etc. The heating conditions may be, for example, 40 to 120° C. for 0.1 to 30 minutes.

Examples of methods for attaching the first resin film (first resin layer 5a) to the first metal layer 3a include methods such as hot pressing, roll lamination, and vacuum lamination. Lamination can be performed, for example, at a temperature of 0 to 120°C.

As another example of the method of providing the first resin layer 5a on the first metal layer 3a, for example, a first resin varnish is directly applied on the first metal layer 3a, and the solvent is volatilized by heating. For example, a method of forming the first resin layer 5a in this manner may be mentioned.

(Step 1C)
The second metal layer 3b can be formed by placing metal foil on the first resin layer 5a. The second metal layer 3b can also be formed by performing physical vapor deposition (PVD) such as vacuum deposition or sputtering on the first resin layer 5a.

When forming the second metal layer 3b using metal foil on the first resin layer 5a, the first resin layer 5a is preferably in a B-stage state. In addition, the first resin layer 5a is formed by curing the first curable resin composition before processing the second metal layer 3b, so that the first resin layer 5a may contain a large amount of cured product of the first curable resin composition. Preferably, it is in a stage state.

When forming the second metal layer 3b by performing PVD on the first resin layer 5a, the first resin layer 5a is made of the first curable resin composition even in the B stage state. Although it may be in a C-stage state that can contain a large amount of cured material, it is preferable to be in a C-stage state from the viewpoint of suppressing volatilization of low-molecular components. The conditions for thermally curing (or photocuring) the first curable resin composition in the first resin layer 5a may be the same as those described above.

The wiring forming member 10A includes, for example, a step (step 1D) of producing a laminate A including the support member 1 and the first metal layer 3a, and a step of forming the first resin layer 5a and the second metal layer 3b. It can also be obtained by a method comprising a step of producing a laminate B containing the laminate B (step 1E), and a step of pasting the first resin layer 5a of the laminate B on the first metal layer 3a of the laminate A (step 1F). be able to.

(Process 1D)
The laminate A can be obtained by forming the first metal layer 3a on the support member 1 in the same manner as in step 1A.

(Step 1E)
Laminated body B is produced by forming a first resin film (first resin layer 5a) on a support film in the same manner as in step 1B, and forming a first resin film (first resin layer 5a) on the first resin layer 5a in the same manner as in step 1C. This can be obtained by forming the second metal layer 3b.

(Process 1F)
The wiring forming member 10A can be obtained by attaching the first resin layer 5a of the laminate B to the first metal layer 3a of the laminate A. The method of attaching the first resin layer 5a of the laminate B to the first metal layer 3a of the laminate A is the same as the method of attaching the first resin film to the first metal layer 3a described above. good.

The wiring forming member 10B shown in FIG. 1(b) includes a support member 1, a second resin layer 5b, a first metal layer 3a, a first resin layer 5a, and a second metal layer 3b. and in this order. The second resin layer 5b contains a second curable resin composition or a cured product thereof. The wiring forming member 10B can be said to be the wiring forming member 10A that further includes a second resin layer 5b between the supporting member 1 and the first metal layer 3a.

The second resin layer 5b contains a second curable resin composition or a cured product thereof. The second curable resin composition may be a curable resin composition that is cured by heat or light. That is, the second resin layer 5b may be in a semi-cured (B stage) state in which at least a portion thereof is cured, and then can be brought into a hardened (C stage) state by heat treatment. The second curable resin composition may be the same as or different from the first curable resin composition, but is preferably the same. In one embodiment, the second curable resin composition includes a thermoplastic resin and a thermosetting resin. At this time, the second curable resin composition may further contain a curing accelerator, a polymerizable monomer, a polymerization initiator, and other components. Examples of each component of the second curable resin composition include the same components as those of the first curable resin composition. Moreover, the content of each component of the second curable resin composition is the same as the content of each component of the first curable resin composition. Therefore, redundant explanation will be omitted here.

The second curable resin composition or its cured product may be the main component of the second resin layer 5b. The total content of the second curable resin composition and its cured product is 80% by mass or more, 85% by mass or more, 90% by mass or more, 95% by mass or more, based on the total amount of the second resin layer 5b. , or 100% by mass. The second resin layer 5b may be made of a second curable resin composition and a cured product thereof.

The thickness of the second resin layer 5b may be, for example, 200 μm or less from the viewpoint of light transmittance. The thickness of the second resin layer 5b may be 1 to 150 μm or 10 to 100 μm.

When the second resin layer 5b is further provided between the support member 1 and the first metal layer 3a, the first metal layer 3a is a metal layer formed using metal foil, or a metal layer formed by vacuum deposition or sputtering. The metal layer may be formed by physical vapor deposition (PVD) such as, for example, and is preferably formed using metal foil.

The metal foil is not particularly limited as long as it is made of a metal that absorbs light including infrared light and generates heat. Metals constituting such metal foil include, for example, single metals such as silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum; SUS, nichrome, duralumin, bronze, cupronickel, brass, and steel. Examples include alloys such as The metal constituting the metal foil may be at least one selected from the group consisting of silver, gold, platinum, copper, titanium, nickel, molybdenum, chromium, and aluminum from the viewpoint of high expansion coefficient, high thermal conductivity, etc. , may be copper.

When the first metal layer 3a is a metal layer formed using metal foil, the thickness of the first metal layer 3a is 1 to 40 μm, 3 to 35 μm, or 5 to 30 μm from the viewpoint of handleability. It may be. When the first metal layer 3a is a metal layer formed by PVD, the thickness of the first metal layer 3a is 1 to 5000 nm (0.001 to 5 μm) or 50 to 3000 nm ( 0.05 to 3 μm).

The method for manufacturing the wiring forming member 10B shown in FIG. 1(b) is not particularly limited as long as a member having a predetermined configuration can be obtained. The wiring forming member 10B includes, for example, a step of providing the second resin layer 5b on the support member 1 (step 2A) and a step of providing the first metal layer 3a on the second resin layer 5b (step 2B). A method comprising: a step of providing a first resin layer 5a on the first metal layer 3a (step 2C); and a step of providing a second metal layer 3b on the first resin layer 5a (step 2D). can be obtained by

(Step 2A)
As a method for providing the second resin layer 5b on the support member 1, a second resin varnish containing the second curable resin composition is prepared in the same manner as in step 1B above, and the second resin layer 5b is Form a film. Next, the second resin layer 5b can be provided by attaching the obtained second resin film (second resin layer 5b) to the support member 1. The thickness of the second resin film may be the same as the thickness of the second resin layer 5b described above. As another example of the method of providing the second resin layer 5b on the support member 1, for example, the second resin varnish is directly applied on the support member 1, the solvent is volatilized by heating, and the second resin layer 5b is formed on the support member 1. A method for forming the resin layer 5b may be mentioned.

(Process 2B)
The first metal layer 3a can be formed by placing metal foil on the second resin layer 5b. The first metal layer 3a can also be formed on the second resin layer 5b by performing physical vapor deposition (PVD) such as vacuum deposition or sputtering.

The method of arranging the metal foil on the second resin layer 5b may be the same as the method of arranging the metal foil on the first resin layer 5a. When disposing metal foil, the second resin layer 5b is preferably in a B-stage state. Further, the second resin layer 5b is formed by curing the second curable resin composition before processing the second metal layer 3b, and may contain a large amount of cured product of the second curable resin composition. Preferably, it is in a stage state. When the second curable resin composition is cured, the first curable resin composition can also be cured, so when the second resin layer 5b is in the C stage state, the first resin layer 5a is also cured. It may be in C stage condition. The conditions for thermosetting may be the same as above.

When forming the first metal layer 3a on the second resin layer 5b by performing PVD, the second resin layer 5b is formed of the second curable resin composition even in the B stage state. Although it may be in a C-stage state that can contain a large amount of cured material, it is preferable to be in a C-stage state from the viewpoint of suppressing volatilization of low-molecular components. The conditions for thermally curing (or photocuring) the second curable resin composition in the second resin layer 5b may be the same as those described above.

(Step 2C)
The method of providing the first resin layer 5a on the first metal layer 3a may be the same as the above step 1B.

(Process 2D)
The second metal layer 3b can be formed on the first resin layer 5a in the same manner as in step 1C.

FIG. 2 is a schematic cross-sectional view showing one embodiment of a laminated film for wiring formation. The wiring forming laminated film 20 shown in FIG. a second curable resin layer 7b containing a second curable resin composition provided on the other surface of the first metal layer 3a; A second metal layer 3b is provided on the surface of the curable resin layer 7a opposite to the first metal layer 3a. The wiring forming laminated film 20 includes a second curable resin layer 7b, a first metal layer 3a, a first curable resin layer 7a, and a second metal layer 3b in this order. The first curable resin composition contained in the first curable resin layer 7a is the same as the first curable resin composition contained in the first resin layer 5a, and the second curable resin composition is the same as the first curable resin composition contained in the first resin layer 5a. The second curable resin composition contained in the resin layer 7b is the same as the second curable resin composition contained in the second resin layer 5b.

The wiring forming member 10B includes, for example, the step of producing the wiring forming laminated film 20 (step 2E) and the step of pasting the second curable resin layer 7b of the wiring forming laminated film 20 on the supporting member 1 (step 2F).

(Step 2E)
The wiring forming laminated film 20 is produced by, for example, forming the second curable resin layer 7b on the support film in the same manner as in step 2A, and forming the second curable resin layer 7b on the second curable resin layer 7b in the same manner as in step 2B. A first metal layer 3a is formed, a first curable resin layer 7a is formed on the first metal layer 3a, and a first curable resin layer 7a is further formed on the first curable resin layer 7a in the same manner as in step 2C. This can be obtained by forming the metal layer 3a of.

(Process 2F)
The wiring forming member 10B can be obtained by attaching the second curable resin layer 7b of the wiring forming laminated film 20 to the supporting member 1. The method of attaching the second curable resin layer 7b of the wiring-forming laminated film 20 to the support member 1 may be the same as the method of attaching the first resin film to the first metal layer 3a described above.

In this way, wiring forming

members

10A and 10B can be obtained. In the

wiring forming members

10A and 10B, the first resin layer 5a preferably contains a cured product of the first curable resin composition, and the second resin layer 5b contains the second curable resin composition. It is preferable to contain a cured product of the product. That is, the first resin layer 5a and the second resin layer 5b are preferably in a C-stage state.

Such

wiring forming members

10A and 10B can be suitably used in the manufacturing process of packages (semiconductor members with wiring layers), and can be irradiated with light containing at least infrared light from the support member side. This makes it possible to easily separate the support member and the semiconductor member with wiring layer.

[Method for manufacturing semiconductor device]
3 and 4 are schematic cross-sectional views for explaining one embodiment of a method for manufacturing a semiconductor device. One embodiment of the method for manufacturing a semiconductor device includes the step of preparing the above wiring forming member 10B (step 3A, see FIG. 3(a)) and forming the wiring layer 11 by processing the second metal layer 3b. (step 3B, see FIG. 3(b)), and a step of arranging the semiconductor member 15 on the wiring layer 11 to produce a laminate 40 including the semiconductor member 30 with wiring layer (step 3C, FIG. 3(c) ), and the first metal layer 3a of the laminate 40 is irradiated with light A containing at least infrared light from the support member 1 side, thereby separating the support member 1 and the semiconductor member 30 with wiring layer. (Step 3D, see FIGS. 4(a) and 4(b)).

(Step 3A)
In this step, the above wiring forming member is prepared. Below, an embodiment using the wiring forming member 10B will be mainly described in detail.

(Process 3B)
In this step, the second metal layer 3b is processed to form the wiring layer 11. Examples of the method for forming the wiring layer 11 by processing the second metal layer 3b include a subtractive method (etching method).

In the subtractive method, an etching resist layer with a shape corresponding to the desired pattern is formed on the metal layer, and then the metal layer in the area where the resist was removed is dissolved with a chemical solution and removed through a subsequent development process. This method forms a wiring layer having a desired circuit. When applying the subtractive method as a method of processing the second metal layer 3b to form the wiring layer 11, conventionally known resists, chemicals, etc. can be used. Furthermore, when applying the subtractive method, the second metal layer 3b may be a metal layer formed using metal foil.

(Step 3C)
In this step, the semiconductor member 15 is placed on the wiring layer 11, and a laminate 40 including the semiconductor member 30 with wiring layer is produced. Examples of the semiconductor member 15 include a semiconductor wafer, a semiconductor chip obtained by dividing a semiconductor wafer, and the like. The number of semiconductor members 15 arranged on the wiring layer 11 may be one or more. The thickness of the semiconductor member 15 is 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm from the viewpoint of reducing the size and thickness of the semiconductor device as well as suppressing cracking during transportation, processing, etc. good.

When the semiconductor member 15 is placed on the wiring layer 11, the insulating layer 13 may be formed on the surface where the semiconductor member 15 is placed where the wiring layer 11 is not formed.

The semiconductor member 15 may be subjected to desired processing after being placed on the wiring layer 11. Processing of a semiconductor member can include, for example, thinning a semiconductor wafer or semiconductor chip, dividing the semiconductor member (dicing), forming through electrodes, etching processing, plating reflow processing, sputtering processing, or a combination thereof. The processed semiconductor member may be sealed with a sealing layer. The sealing layer can be formed using a sealing material commonly used for manufacturing semiconductor members (semiconductor devices). After forming the sealing layer, the sealing layer and the wiring layer may be divided into a plurality of parts each containing one semiconductor member.

(Process 3D)
In this step, the first metal layer 3a of the laminate 40 is irradiated with light A containing at least infrared light from the support member 1 side to separate the support member 1 and the semiconductor member 30 with wiring layers. When irradiated with light A, the first metal layer 3a absorbs the light and instantaneously generates heat. The generated heat may cause melting of the first resin layer 5a, thermal stress between the support member 1 and the semiconductor member 30 with a wiring layer, and the like. These phenomena are the main causes, for example, interfacial peeling (for example, interfacial peeling at the interface between the first metal layer 3a and the first resin layer 5a), cohesive peeling (for example, the first resin layer 5a Cohesion and peeling) may occur, and the supporting member 1 and the semiconductor member 30 with a wiring layer may be separated. In order to separate the supporting member 1 and the semiconductor member 30 with a wiring layer, a slight stress may be applied to the semiconductor member 30 with a wiring layer in addition to the irradiation with the light A.

Light A includes at least infrared light. The wavelength of infrared light is usually 700 nm to 1 mm.

The light A may be coherent light. Coherent light is an electromagnetic wave that has properties such as high coherence, high directivity, and high monochromaticity. Coherent light tends to have high intensity because light having the same wavelength and the same phase is reinforced and combined with each other. Laser light is generally coherent light. Examples of laser light include YAG laser, fiber laser, semiconductor laser, helium-neon laser, argon laser, excimer laser, and the like. The wavelength of the laser light may be 1300 nm or less. When the wavelength is 1300 nm or less, the light absorption of the supporting member 1 is suppressed and the light absorption of the first metal layer 3a is increased, so that it is possible to peel off with lower light irradiation energy. The coherent light may be pulsed light.

The light A may be incoherent light. Incoherent light is non-coherent light, and is an electromagnetic wave that does not generate interference fringes, has low coherence, and has low directivity. Incoherent light tends to be attenuated as the optical path length becomes longer. Light such as sunlight and fluorescent light is incoherent light. Incoherent light can also be said to be light other than laser light. Since the irradiation area of incoherent light is generally much wider than that of coherent light (ie, laser light), it is possible to reduce the number of times of irradiation. For example, one irradiation can cause separation of a plurality of semiconductor members 30 with wiring layers. The incoherent light may be pulsed light.

The light source is not particularly limited, but may be a xenon lamp. A xenon lamp is a lamp that utilizes light emission by application and discharge in an arc tube filled with xenon gas. Since a xenon lamp discharges while repeating ionization and excitation, it stably has continuous wavelengths from the ultraviolet light region to the infrared light region. Since a xenon lamp requires less time to start than a lamp such as a metal halide lamp, the time required for the process can be significantly shortened. Furthermore, since it is necessary to apply a high voltage to emit light, high heat is generated instantaneously, but xenon lamps are also advantageous in that they have a short cooling time and can be used continuously.

All or part of the first resin layer 5a may adhere as a residue on the wiring layer 11 of the semiconductor member 30 with a wiring layer. The attached residue is removed as shown in FIG. 4(c). The attached residue may be peeled off, for example, or may be removed by washing with a solvent. Examples of the solvent include ethanol, methanol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, hexane, and the like. In order to remove the adhered residue, the semiconductor member 30 with wiring layer may be immersed in a solvent or may be subjected to ultrasonic cleaning. Further, in order to remove the adhered residue, the semiconductor member 30 with wiring layer may be heated at a low temperature of about 100° C. or lower, if necessary.

In this way, the semiconductor member 30 with wiring layer (semiconductor device 50) can be obtained. In the semiconductor member 30 with a wiring layer, solder balls 17 may be provided on the wiring layer 11 of the semiconductor member 30 with a wiring layer, for example, as shown in FIG. 4(d).

Another embodiment of the method for manufacturing a semiconductor device includes the step of preparing the above wiring forming member 10B (step 4A, see FIG. 5(a)) and forming the wiring layer 12 on the second metal layer 3b. a step (step 4B, see FIG. 5(b)) and a step (step 4C, FIG. 5(c)) of arranging the semiconductor member 15 on the wiring layer 12 and producing a laminate 70 including the semiconductor member 60 with the wiring layer. ) and a step of irradiating the first metal layer 3a of the laminate 70 with light A containing at least infrared light from the support member 1 side to separate the support member 1 and the semiconductor member 60 with wiring layer. (Step 4D, see FIGS. 6(a) and 6(b)).

(Step 4A)
In this step, the above wiring forming member is prepared. Below, an embodiment using the wiring forming member 10B will be mainly described in detail.

(Step 4B)
In this step, a wiring layer 12 is formed on the second metal layer 3b. Examples of the method for forming the wiring layer 12 on the second metal layer 3b include a semi-additive method.

In the semi-additive method, a plating resist layer with a shape corresponding to a desired pattern is formed on a metal layer, a wiring layer is then formed by electrolytic plating, and the resist layer is removed to form a desired circuit. This is a method of forming a wiring layer. The unnecessary metal layer may be removed using a chemical solution or the like, or after producing the semiconductor member with the wiring layer. When applying a semi-additive method as a method of forming the wiring layer 12 on the second metal layer 3b, conventionally known resists, chemicals, etc. can be used. Further, when applying a semi-additive method, the second metal layer 3b may be a metal layer formed by PVD.

(Step 4C)
In this step, the semiconductor member 15 is placed on the wiring layer 12, and a stacked body 70 including the semiconductor member 60 with wiring layer is manufactured. Since this step is similar to step 3C, overlapping explanation will be omitted.

(Process 4D)
In this step, the first metal layer 3a of the laminate 70 is irradiated with light A containing at least infrared light from the support member 1 side to separate the support member 1 and the semiconductor member 60 with wiring layers. Since this step is similar to step 3D, overlapping explanation will be omitted.

The second metal layer 3b may be attached on the wiring layer 12 of the semiconductor member 60 with wiring layer. The second metal layer 3b is removed as shown in FIG. 6(d). The second metal layer 3b may be removed, for example, by etching using a chemical solution, plasma, or the like.

In this way, the semiconductor member 60 with wiring layer (semiconductor device 80) can be obtained. In the semiconductor member 60 with a wiring layer, solder balls 17 may be provided on the wiring layer 12 of the semiconductor member 60 with a wiring layer, for example, as shown in FIG. 6(e).

The wiring forming member of the present disclosure can be used in the manufacturing process of a semiconductor member with a wiring layer, and the support member and the semiconductor member with a wiring layer can be easily separated. Further, according to the present disclosure, it is possible to provide a laminated film for wiring formation that is useful for forming such a member for wiring formation. Furthermore, according to the present disclosure, it is possible to provide a method of manufacturing a semiconductor device using such a wiring forming member.

DESCRIPTION OF SYMBOLS 1...Supporting member, 3a...First metal layer, 3b...Second metal layer, 5a...First resin layer, 5b...Second resin layer, 7a...First curable resin layer, 7b...Second metal layer 2 curable resin layer, 10A, 10B... Member for wiring formation, 11, 12... Wiring layer, 13... Insulating layer, 15... Semiconductor member, 17... Solder ball, 20... Laminated film for wiring formation, 30, 60... Semiconductor member with wiring layer, 40, 70... Laminated body, 50, 80... Semiconductor device.

Claims

comprising a support member, a first metal layer, a first resin layer, and a second metal layer in this order,
the first resin layer contains a first curable resin composition or a cured product thereof;
Wiring forming member.
further comprising a second resin layer between the support member and the first metal layer,
the second resin layer contains a second curable resin composition or a cured product thereof;
The wiring forming member according to claim 1.
a first metal layer;
a first curable resin layer containing a first curable resin composition provided on one surface of the first metal layer;
a second curable resin layer containing a second curable resin composition provided on the other surface of the first metal layer;
a second metal layer provided on a surface of the first curable resin layer opposite to the first metal layer;
Equipped with
Laminated film for wiring formation.
A step of preparing the wiring forming member according to claim 1 or 2;
processing the second metal layer to form a wiring layer;
arranging a semiconductor member on the wiring layer to produce a laminate including a semiconductor member with a wiring layer;
irradiating the first metal layer of the laminate with light containing at least infrared light from the supporting member side to separate the supporting member and the semiconductor member with wiring layer;
Equipped with
A method for manufacturing a semiconductor device.
A step of preparing the wiring forming member according to claim 1 or 2;
forming a wiring layer on the second metal layer;
arranging a semiconductor member on the wiring layer to produce a laminate including a semiconductor member with a wiring layer;
irradiating the first metal layer of the laminate with light containing at least infrared light from the supporting member side to separate the supporting member and the semiconductor member with wiring layer;
Equipped with
A method for manufacturing a semiconductor device.