WO2023223716A1 - Method for manufacturing glass plate, and device for manufacturing glass plate - Google Patents

Method for manufacturing glass plate, and device for manufacturing glass plate Download PDF

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Publication number
WO2023223716A1
WO2023223716A1 PCT/JP2023/014713 JP2023014713W WO2023223716A1 WO 2023223716 A1 WO2023223716 A1 WO 2023223716A1 JP 2023014713 W JP2023014713 W JP 2023014713W WO 2023223716 A1 WO2023223716 A1 WO 2023223716A1
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WIPO (PCT)
Prior art keywords
etching
glass plate
tank
temperature
etching solution
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PCT/JP2023/014713
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French (fr)
Japanese (ja)
Inventor
宏明 田中
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日本電気硝子株式会社
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Publication of WO2023223716A1 publication Critical patent/WO2023223716A1/en

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    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00Surface treatment of glass, not in the form of fibres or filaments, by etching
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00Other surface treatment of glass not in the form of fibres or filaments
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Definitions

  • the present invention relates to a glass plate manufacturing method and a glass plate manufacturing apparatus configured to immerse the glass plate in an etching solution for etching.
  • this glass plate manufacturing method involves modifying a portion of a glass plate where a through hole is to be formed by irradiating a laser beam to form a modified portion. and an etching step of forming a through hole in a portion to be formed by etching. This etching process also allows the glass plate to be made thinner.
  • This type of etching process is performed by immersing a glass plate in an etching solution in an etching tank, for example, as disclosed in Patent Document 3.
  • the publication states that the etching tank is equipped with an etching tank that stores an etching solution and a chemical tank (replenishment tank) that supplies a chemical solution (replenisher) into the etching tank, and that the replenisher is supplied from the replenishment tank into the etching tank.
  • a configuration is disclosed in which the concentration of the etching solution is adjusted by supplying the etching solution.
  • an object of the present invention is to suppress fluctuations in the etching rate and reduce variations in the etching process on a glass plate in a configuration in which a replenisher is supplied from a replenishment tank to the etching solution in the etching tank. It is.
  • a first aspect of the present invention devised to solve the above problems is a method for manufacturing a glass plate having a first principal surface, a second principal surface, and a processed portion, the method comprising: The part includes a through hole penetrating between the first main surface and the second main surface, and a recess and a groove provided in at least one of the first main surface and the second main surface. a modification step of modifying the portion to be formed in the processing portion by irradiation with laser light; and a modification step in which the glass plate is placed in an etching solution stored in an etching tank and whose temperature is adjusted by a first temperature control device.
  • the replenisher solution stored in a replenishment tank and whose temperature has been adjusted by a second temperature control device is added to the replenisher solution. It is characterized by being supplied into an etching tank.
  • the temperature of the etching solution in the etching tank is adjusted by the first temperature controller, and the temperature of the replenisher in the replenishment tank is adjusted by the second temperature controller. It becomes easier to maintain the temperature of the etching solution inside at a constant temperature. As a result, fluctuations in the etching rate can be suppressed, and variations in the process of forming processed parts on the glass plate can be reduced. As a result, it becomes possible to continuously manufacture glass plates having the same dimensions and the same form of processed parts.
  • the processed portion may be the through hole.
  • the processed portion may be the recess or the groove.
  • the second temperature controller adjusts the temperature of the etching solution in the etching tank based on the temperature of the etching solution adjusted by the first temperature controller.
  • the temperature of the replenisher in the replenishment tank may be adjusted.
  • the temperature of the etching solution is preferably 80° C. to 120° C. in order to increase the etching rate.
  • the temperature of the replenisher may be set to around the maximum temperature within the range where the replenisher does not boil. preferable.
  • the water level of the etching solution in the etching tank is detected by a water level detection device, and based on the detection result, the water level of the etching solution is transferred from the replenishing tank to the etching tank.
  • the water level of the etching solution in the etching tank may be adjusted by supplying a replenisher.
  • the adjusted water level may be different depending on the period from when the glass plate is taken out from the etching solution to when the glass plate is immersed in the etching solution.
  • the period from when the glass plate is immersed in the etching liquid until the time when the glass plate is taken out from the etching liquid, and the period from when the glass plate is taken out from the etching liquid until the time when the glass plate is immersed in the etching liquid can be reduced.
  • the amount equivalent to the volume of the glass plate is combined with the amount of etching solution that adheres to the glass plate and is taken out of the etching tank as the glass plate is removed. (including the volume when the glass plate is set on a jig, etc.).
  • the water level of the etching solution is adjusted between the time the glass plate is taken out of the etching solution and the time the glass plate is immersed in the etching solution, the water level of the etching solution will be the same as when the glass plate had been immersed.
  • the amount of replenisher supplied into the tank increases, and the concentration of the etching solution changes. Therefore, by adjusting the water level between the time the glass plate is immersed in the etching solution and the time the glass plate is removed from the etching solution, the water level is different from that when the glass plate was immersed.
  • the concentration of the etching solution during the period from when the glass plate is immersed in the glass plate to when it is taken out from the etching liquid can be made to be the same concentration as the concentration of the etching liquid when the glass plate is being immersed.
  • the etching solution in the etching tank is an alkaline etching solution, and by supplying the replenisher from the replenishment tank into the etching tank. , the concentration of the etching solution in the etching bath may be adjusted.
  • the alkaline etching solution a NaOH solution, a KOH solution, or the like is used.
  • the characteristics of the alkaline etching solution can be effectively utilized to appropriately adjust the concentration of the etching solution. That is, as the etching solution, not only an alkaline etching solution but also an HF etching solution can be used. In this case, the alkaline etching solution has a lower etching rate than the HF etching solution. Therefore, even when performing an etching process using a highly concentrated etching solution, by using an alkaline etching solution, it is possible to maintain an etching rate that makes it easy to control the etching amount of the processed portion. Furthermore, by performing etching at a high concentration, the influence of deterioration of the etching solution can be reduced.
  • the concentration of the alkaline component of the alkaline etching solution may be 8 mol/L or more and 20 mol/L or less.
  • the etching rate can be increased, so the working time can be shortened. Further, by setting the concentration of the alkaline component to 8 mol/L or more, the evaporation rate when controlling the temperature of the etching solution can be suppressed. Furthermore, by setting the amount to 20 mol/L or less, it is possible to suppress the precipitation of alkali components when the etching solution is brought to room temperature.
  • the replenishment liquid in the replenishment tank may be pure water.
  • the amount of the pure water supplied from the replenishment tank to the etching tank is adjusted according to the amount of loss of the etching solution due to evaporation of water from the etching solution in the etching tank. May be adjusted.
  • a second aspect of the present invention devised to solve the above-mentioned problems is a method for manufacturing a glass plate, which includes a step of thinning the glass plate, wherein the glass plate is stored in an etching bath and heated to a first temperature.
  • An etching step is provided in which the glass plate is thinned by immersing the glass plate in an etching solution whose temperature is adjusted by a temperature control device, and in the etching step, the glass plate is stored in a replenishing tank and is heated by a second temperature control device.
  • the method is characterized in that a temperature-controlled replenisher is supplied into the etching bath.
  • a third aspect of the present invention devised to solve the above-mentioned problems is a glass plate manufacturing apparatus that includes an etching tank that performs etching by immersing the glass plate in an etching solution stored inside. , a replenishment tank for storing a replenisher to be supplied into the etching tank, a supply path for supplying the replenisher to the etching tank, and a first temperature controller that adjusts the temperature of the etching solution in the etching tank. , and a second temperature control device that adjusts the temperature of the replenisher in the replenisher tank.
  • this device it is possible to reduce variations in the process of forming through holes in the glass plate, the process of thinning the glass plate, and the process of forming recesses or grooves in the glass plate.
  • the replenisher in the configuration in which the replenisher is supplied from the replenisher tank to the etching solution in the etching tank, fluctuations in the etching rate are suppressed, and variations in etching processing on the glass plate can be reduced.
  • FIG. 1 is a schematic front view showing the overall configuration of a glass plate manufacturing apparatus according to an embodiment of the present invention.
  • FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which a modification step is being carried out in a method for manufacturing a glass plate according to an embodiment of the present invention.
  • FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which an early stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out.
  • FIG. 2 is an enlarged longitudinal sectional view of a main part showing a situation in which the middle stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out.
  • FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which the final stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out.
  • FIG. 2 is a schematic front view showing the overall configuration of another example (first example) of the glass plate manufacturing apparatus according to the embodiment of the present invention.
  • FIG. 3 is a schematic front view showing the overall configuration of another example (second example) of the glass plate manufacturing apparatus according to the embodiment of the present invention.
  • FIG. 3 is a schematic front view showing the overall configuration of another example (third example) of the glass plate manufacturing apparatus according to the embodiment of the present invention.
  • FIG. 7 is an enlarged vertical cross-sectional view of a main part showing a situation in which a modification step is being carried out in a method for manufacturing a glass plate according to another embodiment of the present invention.
  • FIG. 1 illustrates a glass plate manufacturing apparatus according to an embodiment of the present invention.
  • the glass plate manufacturing apparatus described here is an apparatus for forming processed parts (through holes, recesses, or grooves) on a glass plate and thinning the glass plate. Matters related to this will be explained in detail in the explanation of the glass plate manufacturing method described later.
  • the glass plate manufacturing apparatus 1 includes an etching tank 2 that stores an etching solution E, a replenishment tank 3 that stores a replenisher W, and a replenisher W from the replenisher tank 3 into the etching tank 2.
  • a supply path 4 is provided.
  • One or more glass plates 5 are immersed in the etching solution E in the etching tank 2. As a result, these glass plates 5 are subjected to etching treatment (processing for forming processed portions and thinning treatment).
  • a valve 6 is installed in the supply path 4.
  • the valve 6 may be a flow rate adjustment valve that adjusts the flow rate of the etching solution E supplied from the replenishment tank 3 to the etching tank 2, and may be an on-off valve that only operates to open or shut off the supply path 4. Good too.
  • this manufacturing apparatus 1 includes a first temperature control device 7 that adjusts the temperature of the etching solution E in the etching tank 2, and a second temperature control device 8 that adjusts the temperature of the replenisher W in the replenishment tank 3. Be prepared.
  • the first temperature control device 7 includes a first temperature detection means (first temperature sensor) 7a that detects the temperature of the etching solution E in the etching bath 2, and a first temperature detection means (first temperature sensor) 7a that detects the temperature of the etching solution E in the etching bath 2. and a first heater 7b that heats the etching solution E therein. Note that a first temperature control device capable of heating and cooling the etching liquid E may be used instead of the first heater 7b.
  • the second temperature control device 8 includes a second temperature detection means (second temperature sensor) 8a that detects the temperature of the replenisher W in the replenishment tank 3, and a signal B from the second temperature sensor 8a. and a second heater 8b that heats the replenisher W inside. Note that a second temperature control device capable of heating and cooling the replenisher W may be used instead of the second heater 8b.
  • this manufacturing apparatus 1 is equipped with a water level adjustment device 9.
  • the water level adjustment device 9 includes a water level detection device (level sensor) 9a that detects the water level of the etching solution E in the etching tank 2 (the height of the liquid level L1), and a supply path 4 based on a signal C from the level sensor 9a. and a control means (controller) 9b for controlling the operation of the valve 6.
  • a signal D for controlling the valve 6 is transmitted from the controller 9b.
  • the level sensor 9a detects the water level (height of the liquid level L2) of the etching liquid E in the branching tank 2b branching from the vertically intermediate portion of the side wall 2a of the etching tank 2 and moving upward. Since the etching tank 2 and the branch tank 2b are internally connected, the water level of the etching liquid E in the etching tank 2 and the water level of the etching liquid E in the branch tank 2b are the same. Therefore, the water level of the etching liquid E in the etching tank 2 is detected by the level sensor 9a.
  • a sensor having a float 9aa is used as the level sensor 9a, but other water level detection devices may be used.
  • the controller 9b is composed of, for example, a microcomputer (including a personal computer), a sequencer, or other electric circuit.
  • the etching tank 2 and the replenishment tank 3 are installed in parallel at the same height position.
  • the water level of the replenisher W in the replenisher tank 3 (height of the liquid level L3) is set to always be higher than the water level of the etching solution E in the etching tank 2.
  • the etching solution E an HF-based etching solution, an alkaline-based etching solution, or the like can be used.
  • the etching solution E is an alkaline etching solution.
  • a NaOH solution or a KOH solution is used as the alkaline etching solution.
  • the upper limit of the concentration of the alkaline component of the alkaline etching solution is preferably 20 mol/L, more preferably 18 mol/L, and the lower limit is preferably 8 mol/L, more preferably 10 mol/L.
  • the replenisher W a chemical solution having the same composition or components as the etching solution E and having a lower concentration than the etching solution E, pure water, or the like can be used.
  • the replenisher W is pure water.
  • the supply channel 4 is arranged at the lower ends of the etching tank 2 and the replenishment tank 3, but the height position at which the supply channel 4 is arranged is higher than the liquid level L3 of the replenisher W in the replenishment tank 3. It may be at any other position as long as it is also below.
  • the upper end of the etching tank 2 is open, but the upper end of the etching tank 2 may be covered with an openable and closable lid.
  • the top end of the replenishment tank 3 is open, but the top end of the replenishment tank 3 may be covered with an openable and closable lid.
  • a stirring device (not shown) for stirring the etching solution E may be provided inside the etching tank 2. Thereby, after the replenisher W is supplied, the concentration of the etching solution E in the etching tank 2 can be quickly made uniform.
  • the method for manufacturing a glass plate includes a modification step and an etching step as main steps.
  • the modification step is performed on a glass plate 5 having a first main surface 5a and a second main surface 5b.
  • the modification step is a step of modifying the portion 5c of the glass plate 5 where the through hole is to be formed using the laser light F irradiated from the laser device 10.
  • the modified portion 5c to be formed has a modified portion 5d extending in the thickness direction.
  • the modified portion 5d has a characteristic of being easily etched.
  • the modified portion 5d is preferably formed continuously in the thickness direction from the first principal surface 5a to the second principal surface 5b, as shown in the figure, but is formed intermittently in the thickness direction. may be formed.
  • a plurality of through holes are formed in the glass plate 5
  • a plurality of planned formation portions 5c having the modified portions 5d are also formed.
  • the type and irradiation conditions of the laser beam F are not particularly limited as long as the laser beam F can form a through hole in the formation planned portion 5c.
  • the laser beam F is a short pulse laser beam (nanosecond laser beam, picosecond laser beam, femtosecond laser beam).
  • the diameter G of the modified portion 5d can be adjusted by adjusting the spot diameter of the laser beam F, etc.
  • the glass plate 5 can be made of, for example, alkali-free glass, and the glass composition includes, in mass %, SiO 2 58-68%, Al 2 O 3 15-23% (particularly 17-21%), B. 2 O 3 0 to 9% (especially 3 to 7%), Li 2 O + Na 2 O + K 2 O 0 to less than 1% (especially 0 to 0.5%), MgO 1 to 6% (especially 1 to 4%), It is preferable to contain 3-13% (especially 5-10%) of CaO, 0-10% (especially 0.1-3%) of SrO, and 0.1-15% (especially 0.1-5%) of BaO. .
  • etching step by etching the glass plate 5, a through hole is formed in the planned formation portion 5c having the modified portion 5d, passing through in the thickness direction between the first principal surface 5a and the second principal surface 5b.
  • This is the process of Specifically, in the etching process, one or more glass plates 5 set in a jig or the like are immersed in an etching solution E stored in an etching bath 2 shown in FIG. Etching is simultaneously proceeded from both sides of the first principal surface 5a and second principal surface 5b.
  • the planned formation portion 5c having the modified portion 5d is gradually removed by etching.
  • the portion to be formed 5c has not penetrated in the thickness direction.
  • the portion 5c to be formed penetrates in the thickness direction, as shown in FIG.
  • the diameter of the through hole is enlarged, and a through hole 5e as shown in FIG. 5 is finally formed.
  • the straight lines indicated by symbols 5ax and 5bx in FIGS. 3 to 5 indicate the respective positions of the first principal surface 5a and the second principal surface 5b before etching. Therefore, the glass plate 5 becomes thinner throughout the etching process.
  • each component of the manufacturing apparatus 1 shown in FIG. 1 performs the following operations.
  • etching solution E the temperature of the alkaline etching solution E (hereinafter simply referred to as etching solution E) stored in the etching tank 2 and the temperature of the pure water W stored in the replenishment tank 3 are controlled by the first temperature controller. 7 and a second temperature control device 8 adjust the temperature. Then, pure water W is supplied from the replenishment tank 3 to the etching tank 2 through the supply path 4.
  • the temperature of the etching solution E is set at 80° C. to 120° C. in order to increase the etching rate.
  • the temperature of the pure water W in the replenishment tank 3 is adjusted by the second temperature control device 8 based on the temperature of the etching solution E in the etching tank 2. Specifically, when the temperature of the etching liquid E is below the maximum temperature within the range where the pure water W does not boil, the second temperature controller 8 sets the temperature of the pure water W to be the same as the temperature of the etching liquid E. temperature.
  • the second temperature controller 8 adjusts the temperature of the pure water W within the range where the pure water W does not boil. The temperature should be around the maximum temperature within the room.
  • the temperature of the etching solution E in the etching bath 2 is adjusted by the first temperature controller 7. Therefore, it becomes easier to maintain the temperature of the etching solution E at a constant temperature. Therefore, the first temperature controller 7 can bring the etching liquid E to an appropriate temperature in a short time from the time when the pure water W is supplied into the etching bath 2. As a result, fluctuations in the etching rate are suppressed, and variations in the process of forming through holes in the plurality of glass plates 5 are reduced.
  • the level sensor 9a of the water level adjustment device 9 detects the water level of the etching solution E in the etching tank 2, and the controller 9b controls the valve 6 based on the signal C from the level sensor 9a, so that the replenishment tank 3 An appropriate amount of pure water W is supplied to the etching bath 2 from the etching tank 2.
  • controller 9b can supply the pure water W from the refill tank 3 to the etching tank 2 simply by controlling the valve 6 is because the water level of the pure water W is always higher than the water level of the etching solution E. Note that in order to keep the water level of the pure water W higher than the water level of the etching solution E, the replenishment tank 3 is replenished with pure water W through an opening at its upper end.
  • the valve 6 is constituted by a flow rate adjustment valve
  • the pure water W is made to flow continuously from the replenishment tank 3 to the etching tank 2, and the flow rate of the pure water W at that time is controlled by the controller 9b.
  • the controller 9b adjusts the opening degree of the valve 6 so that the water level of the etching liquid E is maintained at a preset first reference value. Thereby, the water level of the etching liquid E is always maintained at the first reference value.
  • the controller 9b opens the supply path 4 at predetermined intervals to intermittently supply pure water from the replenishment tank 3 to the etching tank 2.
  • the controller 9b controls the valve 6 so that the supply path 4 is opened and closed as shown below. That is, when the water level of the etching liquid E decreases from the first reference value, the water level is set at a predetermined position (a reference value may be set in advance) within a range that does not interfere with the etching process of the glass plate 5. ), the supply path 4 is kept shut off until it descends to .). When the water level falls and reaches the predetermined position, the supply channel 4 is kept open until the water level rises to the first reference value. When the water level rises and reaches the first reference value, the supply path 4 is shut off. By performing such control, the water level of the etching liquid E is maintained at the first reference value at predetermined time intervals.
  • the pure water W is supplied to the etching tank 2 in accordance with the evaporation of water from the etching solution E, so that the concentration of the etching solution E in the etching tank 2 is maintained constant. Furthermore, even if the amount of water evaporation increases by heating the etching solution E to a high temperature in order to increase the etching rate, a large amount of pure water W is supplied from the replenishment tank 3 to the etching tank 2 accordingly. , the concentration of etching solution E is maintained constant. Coupled with the fact that the temperature of the etching solution E is maintained constant as described above, fluctuations in the etching rate are significantly suppressed.
  • the reference value of the water level of the etching solution E is made different. Specifically, when all the glass plates 5 are immersed in the etching liquid E, the water level of the etching liquid E is adjusted based on the above-mentioned first reference value. On the other hand, when all the glass plates 5 are being taken out from the etching solution E, the water level of the etching solution E is adjusted based on the second reference value that is lower than the above-mentioned first reference value.
  • the water level of the etching liquid E is lowered by the total amount including the amount of the etching liquid E that adheres to the glass plate 5 and is taken out of the etching bath 2.
  • the amount of pure water W supplied into the etching tank 2 will increase and the etching solution will be The concentration of E decreases.
  • the water level is adjusted based on a second reference value that is lower than the first reference value by a value corresponding to the total amount.
  • the concentration of the etching liquid E when all the glass plates 5 are taken out can be made equal to the concentration of the etching liquid E when all the glass plates 5 are immersed.
  • the preceding one or more glass plates 5 are It becomes possible to perform a process of forming through holes in the same manner as in the plate 5.
  • the setting when starting the subsequent etching process, it is preferable to change the setting so that the first reference value is lowered by a value corresponding to the above-mentioned amount of removal. In this way, both the first reference value and the second reference value are lowered by a numerical value corresponding to the above-mentioned amount taken out each time an etching process is performed. Thereby, the amount of etching liquid E is adjusted to constantly decrease by the amount taken out in the etching bath 2, so that the concentration of etching liquid E is more reliably maintained at a constant concentration.
  • the glass plate 5 is immersed in the etching liquid E and the glass plate 5 is being taken out from the etching liquid E, it is preferable to stop supplying the pure water W to the etching tank 2. If pure water W is supplied to the etching tank 2 when performing these operations, the first reference and the second reference cannot be set accurately.
  • the embodiments of the present invention are not limited thereto, and may be provided without departing from the gist of the present invention. Various changes are possible.
  • the replenishment tank 3 is replenished with pure water W through the opening at the upper end of the replenishment tank 3.
  • the replenishment tank 3 is also provided with a water level adjustment device similar to the configuration of the etching tank 2, and the controller controls the valve 6 based on the signal from the water level detection means (level sensor).
  • the water level of pure water W in 3 may be set to an appropriate water level.
  • the controller used here may be the controller 9b that receives the signal C from the level sensor 9a arranged in the branch tank 2b, or may be another controller. Note that the configuration in which the water level adjustment device is provided in the replenishment tank 3 can also be applied to a configuration in which the replenishment tank 3 is refilled with pure water W from the replenishment path 12 through the opening at the upper end of the replenishment tank 3.
  • the water level of the pure water W in the replenishment tank 3 is always higher than the water level of the etching solution E in the etching tank 2, but as shown in FIG.
  • the pure water W is forcibly sent from the replenishment tank 3 to the etching tank 2 by the pump P, the water level of both of the above may be high.
  • the operation of pump P is controlled based on signal H from controller 9b. In this case, if the pump P has the function of adjusting the flow rate of the pure water W and the function of allowing and blocking the flow of the pure water W, the valve 6 shown in the figure need not be installed in the supply path 4. Good too.
  • the etching tank 2 and the replenishment tank 3 are arranged at the same height position, but both 2 and 3 may be arranged at different height positions.
  • the replenishment tank 3 may be arranged above the etching tank 2.
  • a supply path 4 whose lower end is open is connected to the bottom wall 3b of the replenishment tank 3 arranged above the etching tank 2, and a valve 6 is installed in this supply path 4.
  • the above-mentioned replenishment path 12 or a water level adjustment device similar to the configuration for the etching tank 2 may be provided.
  • FIGS. 6 to 8 the same reference numerals are given to the same components as those in the manufacturing apparatus 1 shown in FIG. 1.
  • a plurality of glass plates 5 are immersed in the etching liquid E and taken out from the etching liquid E, but one glass plate 5 is immersed in the etching liquid E and taken out from the etching liquid E. Even in this case, the present invention can be applied in the same manner.
  • the glass plate 5 is immersed in the etching solution E in a vertical position, but the glass plate 5 may be immersed in a horizontal position (horizontal position or substantially horizontal position).
  • the etching process was performed after the modification process was performed on the glass plate 5 to form through holes and reduce the thickness, but the present invention is not limited to this. Only the etching process may be performed without performing the modification process, and only the thickness of the glass plate 5 may be reduced.
  • the through hole 5e is formed in the glass plate 5, but the present invention is not limited thereto.
  • a recess may be formed in at least one of the first main surface 5a and the second main surface 5b of the glass plate 5.
  • the groove portion may be formed by combining a plurality of recesses (non-through holes).
  • one or more of these through holes 5e, recesses (non-through holes), and grooves may be formed in the glass plate 5.
  • etching process may be completed when the recesses are formed on the first main surface 5a and the second main surface 5b of the glass plate 5, respectively.
  • etching is performed after forming a modified portion 5d having a length corresponding to the depth of the recess from at least one of the first main surface 5a and second main surface 5b of the glass plate 5 in the modification step. You may make it form a recessed part in at least one main surface of the 1st main surface 5a and the 2nd main surface 5b of the glass plate 5 in a process.
  • a modified part 5d is formed from one main surface of the glass plate 5 to the middle part in the thickness direction. You may.
  • the depth of the modified portion from the main surface is preferably adjusted depending on the depth of the recess or groove.
  • modified parts 5d are formed at multiple locations on at least one of the first main surface 5a and the second main surface 5b of the glass plate 5.
  • the groove portion may be formed by combining (connecting) a plurality of recesses (a plurality of recesses formed in the same manner as described above) with each other in an etching process.
  • the first main surface 5d may be etched in the etching step.
  • a groove may be formed in at least one of the main surface 5a and the second main surface 5b.

Abstract

In the method for manufacturing a glass plate 5 having a processed portion (through hole 5e), a replenishing solution W, which is stored in a replenishing tank 3 and the temperature of which has been adjusted by a second temperature control device 8, is supplied to an etching tank 2 in an etching step in which the glass plate 5 is immersed in an etching solution E, which is stored in the etching tank 2 and the temperature of which has been adjusted by a first temperature control device 7, to form a processed portion (through hole 5e) by etching.

Description

ガラス板の製造方法及びガラス板の製造装置Glass plate manufacturing method and glass plate manufacturing device
 本発明は、ガラス板をエッチング液に浸漬させてエッチングする構成とされたガラス板の製造方法及びガラス板の製造装置に関する。 The present invention relates to a glass plate manufacturing method and a glass plate manufacturing apparatus configured to immerse the glass plate in an etching solution for etching.
 近年においては、タイリングディスプレイ(マイクロLED等)、ベゼルレスディスプレイ、ガラスインターポーザなどの基板として、配線(貫通電極等)用の微細な貫通孔を有するガラス板の利用が促進されている。 In recent years, the use of glass plates having fine through holes for wiring (through electrodes, etc.) has been promoted as substrates for tiling displays (micro LEDs, etc.), bezel-less displays, glass interposers, etc.
 このガラス板の製造方法は、例えば、特許文献1、2に開示されているように、ガラス板における貫通孔の形成予定部をレーザ光の照射により改質して改質部を形成する改質工程と、エッチングにより形成予定部に貫通孔を形成するエッチング工程とを備える。このエッチング工程では、ガラス板を薄肉化することもできる。 For example, as disclosed in Patent Documents 1 and 2, this glass plate manufacturing method involves modifying a portion of a glass plate where a through hole is to be formed by irradiating a laser beam to form a modified portion. and an etching step of forming a through hole in a portion to be formed by etching. This etching process also allows the glass plate to be made thinner.
 この種のエッチング工程は、例えば、特許文献3に開示されているように、エッチング槽内のエッチング液にガラス板を浸漬させて行われる。 This type of etching process is performed by immersing a glass plate in an etching solution in an etching tank, for example, as disclosed in Patent Document 3.
 具体的に、同公報には、エッチング液を貯留するエッチング槽と、エッチング槽内に薬液(補充液)を供給する薬液タンク(補充槽)とを備え、補充槽からエッチング槽内に補充液を供給することで、エッチング液の濃度を調整する構成が開示されている。 Specifically, the publication states that the etching tank is equipped with an etching tank that stores an etching solution and a chemical tank (replenishment tank) that supplies a chemical solution (replenisher) into the etching tank, and that the replenisher is supplied from the replenishment tank into the etching tank. A configuration is disclosed in which the concentration of the etching solution is adjusted by supplying the etching solution.
特開2018-199605号公報Japanese Patent Application Publication No. 2018-199605 特開2020-66551号公報JP2020-66551A 特開2017-14041号公報Japanese Patent Application Publication No. 2017-14041
 しかしながら、上述の特許文献3に開示のように補充液の供給によってエッチング槽内のエッチング液の濃度を調整しても、エッチング液の温度が変動すれば、エッチングレートが大幅に変動する。そのため、ガラス板へのエッチング処理に大きなばらつきが生じ、品位が同一の製品たるガラス板を連続して製造することが困難になる。 However, even if the concentration of the etching solution in the etching tank is adjusted by supplying a replenisher as disclosed in Patent Document 3 mentioned above, if the temperature of the etching solution changes, the etching rate will change significantly. Therefore, large variations occur in the etching process on the glass plates, making it difficult to continuously manufacture glass plates that are products of the same quality.
 以上の観点から、本発明の課題は、エッチング槽内のエッチング液に補充槽から補充液を供給する構成において、エッチングレートの変動を抑制して、ガラス板へのエッチング処理のばらつきを低減することである。 In view of the above, an object of the present invention is to suppress fluctuations in the etching rate and reduce variations in the etching process on a glass plate in a configuration in which a replenisher is supplied from a replenishment tank to the etching solution in the etching tank. It is.
 (1) 上記課題を解決するために創案された本発明の第一の側面は、第一主面と、第二主面と、加工部とを有するガラス板の製造方法であって、前記加工部は、前記第一主面と前記第二主面との間を貫通する貫通孔、並びに、前記第一主面及び前記第二主面の少なくとも一方の主面に設けられる凹部及び溝部のうちの一種以上を含み、前記加工部の形成予定部をレーザ光の照射により改質する改質工程と、エッチング槽に貯留されて第一温調装置により温度が調整されたエッチング液にガラス板を浸漬させてエッチングすることで前記形成予定部に前記加工部を形成するエッチング工程とを備え、前記エッチング工程では、補充槽に貯留されて第二温調装置により温度が調整された補充液を前記エッチング槽内に供給することに特徴づけられる。 (1) A first aspect of the present invention devised to solve the above problems is a method for manufacturing a glass plate having a first principal surface, a second principal surface, and a processed portion, the method comprising: The part includes a through hole penetrating between the first main surface and the second main surface, and a recess and a groove provided in at least one of the first main surface and the second main surface. a modification step of modifying the portion to be formed in the processing portion by irradiation with laser light; and a modification step in which the glass plate is placed in an etching solution stored in an etching tank and whose temperature is adjusted by a first temperature control device. and an etching step of forming the processed portion in the planned formation portion by immersion and etching, and in the etching step, the replenisher solution stored in a replenishment tank and whose temperature has been adjusted by a second temperature control device is added to the replenisher solution. It is characterized by being supplied into an etching tank.
 このような構成によれば、エッチング槽内のエッチング液の温度が第一温調装置により調整され、且つ、補充槽内の補充液の温度が第二温調装置により調整されるため、エッチング槽内のエッチング液の温度を一定の温度に維持し易くなる。これにより、エッチングレートの変動が抑制され、ガラス板に加工部を形成する処理のばらつきを低減することができる。その結果、同一寸法で同一形態の加工部を有するガラス板を連続して製造することが可能となる。 According to such a configuration, the temperature of the etching solution in the etching tank is adjusted by the first temperature controller, and the temperature of the replenisher in the replenishment tank is adjusted by the second temperature controller. It becomes easier to maintain the temperature of the etching solution inside at a constant temperature. As a result, fluctuations in the etching rate can be suppressed, and variations in the process of forming processed parts on the glass plate can be reduced. As a result, it becomes possible to continuously manufacture glass plates having the same dimensions and the same form of processed parts.
 (2) 上記(1)の構成において、前記加工部は、前記貫通孔であってもよい。 (2) In the configuration of (1) above, the processed portion may be the through hole.
 このようにすれば、ガラス板に貫通孔を形成する処理のばらつきを低減することができる。 In this way, variations in the process of forming through holes in the glass plate can be reduced.
 (3) 上記(1)の構成において、前記加工部は、前記凹部又は前記溝部であってもよい。 (3) In the configuration of (1) above, the processed portion may be the recess or the groove.
 このようにすれば、ガラス板に凹部又は溝部を形成する処理のばらつきを低減することができる。 In this way, variations in the process of forming recesses or grooves on the glass plate can be reduced.
 (4) 上記(1)~(3)の何れかの構成において、前記第一温調装置により調整された前記エッチング槽内のエッチング液の温度を元にして、前記第二温調装置が前記補充槽内の補充液の温度を調整してもよい。 (4) In any one of the configurations (1) to (3) above, the second temperature controller adjusts the temperature of the etching solution in the etching tank based on the temperature of the etching solution adjusted by the first temperature controller. The temperature of the replenisher in the replenishment tank may be adjusted.
 このようにすれば、エッチング槽内のエッチング液の温度をより一層一定の温度に維持し易くなる。ここで、エッチング液として、後述するアルカリ系エッチング液を使用する場合には、エッチングレートを高めるためにエッチング液の温度を80℃~120℃とすることが好ましい。このような温度条件の下では、エッチング液の温度が、補充液が沸騰しない範囲内での最高温度以下である場合に、補充液の温度をエッチング液の温度と同一の温度とすることが好ましい。これに対して、エッチング液の温度が、補充液が沸騰しない範囲内での最高温度を超える場合には、補充液の温度を、補充液が沸騰しない範囲内での最高温度付近とすることが好ましい。 In this way, it becomes easier to maintain the temperature of the etching solution in the etching tank at a constant temperature. Here, when an alkaline etching solution to be described later is used as the etching solution, the temperature of the etching solution is preferably 80° C. to 120° C. in order to increase the etching rate. Under such temperature conditions, if the temperature of the etching solution is below the maximum temperature within the range where the replenisher does not boil, it is preferable to set the temperature of the replenisher to the same temperature as the etching solution. . On the other hand, if the temperature of the etching solution exceeds the maximum temperature within the range where the replenisher does not boil, the temperature of the replenisher may be set to around the maximum temperature within the range where the replenisher does not boil. preferable.
 (5) 上記(1)~(4)の何れかの構成において、前記エッチング槽内のエッチング液の水位を水位検出装置により検出し、その検出結果に基づいて前記補充槽から前記エッチング槽内へ補充液を供給することで、前記エッチング槽内のエッチング液の水位を調整するようにしてもよい。 (5) In any of the configurations (1) to (4) above, the water level of the etching solution in the etching tank is detected by a water level detection device, and based on the detection result, the water level of the etching solution is transferred from the replenishing tank to the etching tank. The water level of the etching solution in the etching tank may be adjusted by supplying a replenisher.
 このようにすれば、水位検出装置の使用によって、エッチング槽内のエッチング液の水位を一定の高さに維持することが可能となる。これにより、エッチング槽内のエッチング液の不足分を、補充槽から供給される補充液によって正確に補うことができる。 In this way, by using the water level detection device, it becomes possible to maintain the water level of the etching solution in the etching tank at a constant height. Thereby, the shortage of etching solution in the etching tank can be accurately supplemented with the replenishing solution supplied from the replenishing tank.
 (6) 上記(1)~(5)の何れかの構成において、前記ガラス板を前記エッチング液に浸漬させる時から前記ガラス板を前記エッチング液から取り出す時までの期間と、前記ガラス板を前記エッチング液から取り出す時から前記ガラス板を前記エッチング液に浸漬させる時までの期間とで、調整される水位が異なるようにしてもよい。 (6) In any of the configurations (1) to (5) above, the period from when the glass plate is immersed in the etching solution to when the glass plate is taken out from the etching solution, and when the glass plate is immersed in the etching solution. The adjusted water level may be different depending on the period from when the glass plate is taken out from the etching solution to when the glass plate is immersed in the etching solution.
 このようにすれば、ガラス板をエッチング液に浸漬させる時からガラス板をエッチング液から取り出す時までの期間と、ガラス板をエッチング液から取り出す時からガラス板をエッチング液に浸漬させる時までの期間とでエッチング槽内のエッチング液の水位を同一とすることによる不具合が回避される。すなわち、エッチング液からガラス板を取り出した際には、ガラス板の体積に相当する量と、ガラス板の取り出しに伴いガラス板に付着してエッチング槽外に持ち出されるエッチング液の持ち出し量との合計分(ガラス板が治具などにセットされる場合はその体積分を含む)だけエッチング液の水位が下降する。この場合、ガラス板をエッチング液から取り出す時からガラス板をエッチング液に浸漬させる時までの期間に、ガラス板を侵漬させていた場合のエッチング液の水位になるように調整したならば、エッチング槽内への補充液の供給量が増加して、エッチング液の濃度が変化する。そこで、ガラス板をエッチング液に浸漬させる時からガラス板をエッチング液から取り出す時までの期間は、ガラス板を侵漬させていた場合と異なる水位になるように調整すれば、ガラス板をエッチング液に浸漬させる時からガラス板をエッチング液から取り出す時までの期間のエッチング液の濃度を、ガラス板を浸漬させている時のエッチング液の濃度と同等の濃度にすることができる。これにより、後続のガラス板をエッチング液に侵浸させた場合に、後続のガラス板に対して、先行するガラス板と同等に加工部を形成する処理を施すことが可能となる。 In this way, the period from when the glass plate is immersed in the etching liquid until the time when the glass plate is taken out from the etching liquid, and the period from when the glass plate is taken out from the etching liquid until the time when the glass plate is immersed in the etching liquid can be reduced. This avoids problems caused by keeping the water level of the etching solution in the etching tank the same. In other words, when a glass plate is removed from the etching solution, the amount equivalent to the volume of the glass plate is combined with the amount of etching solution that adheres to the glass plate and is taken out of the etching tank as the glass plate is removed. (including the volume when the glass plate is set on a jig, etc.). In this case, if the water level of the etching solution is adjusted between the time the glass plate is taken out of the etching solution and the time the glass plate is immersed in the etching solution, the water level of the etching solution will be the same as when the glass plate had been immersed. The amount of replenisher supplied into the tank increases, and the concentration of the etching solution changes. Therefore, by adjusting the water level between the time the glass plate is immersed in the etching solution and the time the glass plate is removed from the etching solution, the water level is different from that when the glass plate was immersed. The concentration of the etching solution during the period from when the glass plate is immersed in the glass plate to when it is taken out from the etching liquid can be made to be the same concentration as the concentration of the etching liquid when the glass plate is being immersed. Thereby, when the subsequent glass plate is immersed in the etching solution, it becomes possible to perform the process of forming a processed portion on the subsequent glass plate in the same manner as the preceding glass plate.
 (7) 上記(1)~(6)の何れかの構成において、前記エッチング槽内のエッチング液は、アルカリ系エッチング液であり、前記補充槽から前記エッチング槽内へ補充液を供給することで、前記エッチング槽内のエッチング液の濃度を調整してもよい。アルカリ系エッチング液としては、NaOH溶液やKOH溶液などが使用される。 (7) In any of the configurations (1) to (6) above, the etching solution in the etching tank is an alkaline etching solution, and by supplying the replenisher from the replenishment tank into the etching tank. , the concentration of the etching solution in the etching bath may be adjusted. As the alkaline etching solution, a NaOH solution, a KOH solution, or the like is used.
 このようにすれば、アルカリ系エッチング液の特性を有効利用して、エッチング液の濃度を適正に調整することができる。すなわち、エッチング液としては、アルカリ系エッチング液だけでなく、HF系エッチング液なども使用することができる。この場合、アルカリ系エッチング液は、HF系エッチング液と比較すれば、エッチングレートが低い。従って、高い濃度のエッチング液でエッチング工程を行う際も、アルカリエッチング液を用いることで、加工部のエッチング量の制御が容易なエッチングレートを維持することができる。また、高い濃度でエッチングを行うことにより、エッチング液の劣化による影響を少なくすることができる。 In this way, the characteristics of the alkaline etching solution can be effectively utilized to appropriately adjust the concentration of the etching solution. That is, as the etching solution, not only an alkaline etching solution but also an HF etching solution can be used. In this case, the alkaline etching solution has a lower etching rate than the HF etching solution. Therefore, even when performing an etching process using a highly concentrated etching solution, by using an alkaline etching solution, it is possible to maintain an etching rate that makes it easy to control the etching amount of the processed portion. Furthermore, by performing etching at a high concentration, the influence of deterioration of the etching solution can be reduced.
 (8) 上記(1)~(7)の何れかの構成において、前記アルカリ系エッチング液のアルカリ成分の濃度は、8mol/L以上20mol/L以上以下であってもよい。 (8) In any of the configurations (1) to (7) above, the concentration of the alkaline component of the alkaline etching solution may be 8 mol/L or more and 20 mol/L or less.
 このようにすれば、エッチングレートを高くできるため、作業時間の短縮等が図られる。また、アルカリ成分の濃度を8mol/L以上にすることにより、エッチング液を温調した際の蒸発速度を抑制することができる。さらに、20mol/L以下にすることにより、エッチング液を常温にした際のアルカリ成分析出を抑制することができる。 In this way, the etching rate can be increased, so the working time can be shortened. Further, by setting the concentration of the alkaline component to 8 mol/L or more, the evaporation rate when controlling the temperature of the etching solution can be suppressed. Furthermore, by setting the amount to 20 mol/L or less, it is possible to suppress the precipitation of alkali components when the etching solution is brought to room temperature.
 (9) 上記(1)~(8)の何れかの構成において、前記補充槽内の補充液は、純水であってもよい。 (9) In any of the configurations (1) to (8) above, the replenishment liquid in the replenishment tank may be pure water.
 このようにすれば、補充液として薬液を使用する必要がなくなるため、ガラス板に加工部を形成する処理に要するコストの削減等が図られる。 In this way, there is no need to use a chemical solution as a replenisher, so the cost required for the process of forming the processed portion on the glass plate can be reduced.
 (10) 上記(9)の構成において、前記エッチング槽内のエッチング液からの水分の蒸発による該エッチング液の減量分に応じて、前記補充槽から前記エッチング槽へ供給する前記純水の量を調整してもよい。 (10) In the configuration of (9) above, the amount of the pure water supplied from the replenishment tank to the etching tank is adjusted according to the amount of loss of the etching solution due to evaporation of water from the etching solution in the etching tank. May be adjusted.
 このようにすれば、エッチングレートを高めるためにエッチング液を高温にしても、適切な対応が可能になる。すなわち、エッチング液を高温にすることで、より多くの水分が蒸発しても、その水分の不足分は、補充槽から供給される多量の純水によって補われる。したがって、エッチングレートを高めた場合であっても、エッチング液の濃度の調整を正確且つ容易に行うことができる。 In this way, even if the etching solution is heated to a high temperature in order to increase the etching rate, it will be possible to respond appropriately. That is, even if more water evaporates by heating the etching solution to a high temperature, the lack of water will be compensated for by a large amount of pure water supplied from the replenishment tank. Therefore, even when the etching rate is increased, the concentration of the etching solution can be adjusted accurately and easily.
 (11) 上記課題を解決するために創案された本発明の第二の側面は、ガラス板を薄肉化する工程を備えたガラス板の製造方法であって、エッチング槽に貯留されて第一温調装置により温度が調整されたエッチング液にガラス板を浸漬させてエッチングすることで前記ガラス板を薄肉化するエッチング工程を備え、前記エッチング工程では、補充槽に貯留されて第二温調装置により温度が調整された補充液を前記エッチング槽内に供給することに特徴づけられる。 (11) A second aspect of the present invention devised to solve the above-mentioned problems is a method for manufacturing a glass plate, which includes a step of thinning the glass plate, wherein the glass plate is stored in an etching bath and heated to a first temperature. An etching step is provided in which the glass plate is thinned by immersing the glass plate in an etching solution whose temperature is adjusted by a temperature control device, and in the etching step, the glass plate is stored in a replenishing tank and is heated by a second temperature control device. The method is characterized in that a temperature-controlled replenisher is supplied into the etching bath.
 このような構成によれば、既述の場合と同様に、エッチング槽内のエッチング液の温度を一定の温度に維持し易くなるため、エッチングレートの変動が抑制される。これにより、ガラス板を薄肉化する処理のばらつきを低減することができる。その結果、同一の板厚とされたガラス板を連続して製造することが可能となる。 According to such a configuration, as in the case described above, it becomes easier to maintain the temperature of the etching solution in the etching tank at a constant temperature, so fluctuations in the etching rate are suppressed. Thereby, variations in the process of thinning the glass plate can be reduced. As a result, it becomes possible to continuously manufacture glass plates having the same thickness.
 (12) 上記課題を解決するために創案された本発明の第三の側面は、ガラス板の製造装置であって、内部に貯留したエッチング液にガラス板を浸漬させてエッチングを行うエッチング槽と、前記エッチング槽内に供給する補充液を貯留する補充槽と、前記補充液を前記エッチング槽内へ供給する供給路と、前記エッチング槽内のエッチング液の温度を調整する第一温調装置と、前記補充槽内の前記補充液の温度を調整する第二温調装置と、を備えることに特徴づけられる。 (12) A third aspect of the present invention devised to solve the above-mentioned problems is a glass plate manufacturing apparatus that includes an etching tank that performs etching by immersing the glass plate in an etching solution stored inside. , a replenishment tank for storing a replenisher to be supplied into the etching tank, a supply path for supplying the replenisher to the etching tank, and a first temperature controller that adjusts the temperature of the etching solution in the etching tank. , and a second temperature control device that adjusts the temperature of the replenisher in the replenisher tank.
 この装置によれば、既述のガラス板に貫通孔を形成する処理、ガラス板を薄肉化する処理、及びガラス板に凹部又は溝部を形成する処理のばらつきを低減することができる。 According to this device, it is possible to reduce variations in the process of forming through holes in the glass plate, the process of thinning the glass plate, and the process of forming recesses or grooves in the glass plate.
 本発明によれば、エッチング槽内のエッチング液に補充槽から補充液を供給する構成において、エッチングレートの変動が抑制されて、ガラス板へのエッチング処理のばらつきを低減することができる。 According to the present invention, in the configuration in which the replenisher is supplied from the replenisher tank to the etching solution in the etching tank, fluctuations in the etching rate are suppressed, and variations in etching processing on the glass plate can be reduced.
本発明の実施形態に係るガラス板の製造装置の全体構成を示す概略正面図である。1 is a schematic front view showing the overall configuration of a glass plate manufacturing apparatus according to an embodiment of the present invention. 本発明の実施形態に係るガラス板の製造方法における改質工程を実施している状況を示す要部拡大縦断面図である。FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which a modification step is being carried out in a method for manufacturing a glass plate according to an embodiment of the present invention. 本発明の実施形態に係るガラス板の製造方法におけるエッチング工程の序盤を実施している状況を示す要部拡大縦断面図である。FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which an early stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out. 本発明の実施形態に係るガラス板の製造方法におけるエッチング工程の中盤を実施している状況を示す要部拡大縦断面図である。FIG. 2 is an enlarged longitudinal sectional view of a main part showing a situation in which the middle stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out. 本発明の実施形態に係るガラス板の製造方法におけるエッチング工程の終盤を実施している状況を示す要部拡大縦断面図である。FIG. 2 is an enlarged vertical cross-sectional view of a main part showing a situation in which the final stage of an etching process in a method for manufacturing a glass plate according to an embodiment of the present invention is being carried out. 本発明の実施形態に係るガラス板の製造装置の他の例(第一例)の全体構成を示す概略正面図である。FIG. 2 is a schematic front view showing the overall configuration of another example (first example) of the glass plate manufacturing apparatus according to the embodiment of the present invention. 本発明の実施形態に係るガラス板の製造装置の他の例(第二例)の全体構成を示す概略正面図である。FIG. 3 is a schematic front view showing the overall configuration of another example (second example) of the glass plate manufacturing apparatus according to the embodiment of the present invention. 本発明の実施形態に係るガラス板の製造装置の他の例(第三例)の全体構成を示す概略正面図である。FIG. 3 is a schematic front view showing the overall configuration of another example (third example) of the glass plate manufacturing apparatus according to the embodiment of the present invention. 本発明の他の実施形態に係るガラス板の製造方法における改質工程を実施している状況を示す要部拡大縦断面図である。FIG. 7 is an enlarged vertical cross-sectional view of a main part showing a situation in which a modification step is being carried out in a method for manufacturing a glass plate according to another embodiment of the present invention.
 以下、本発明の実施形態に係るガラス板の製造装置及びガラス板の製造方法について添付図面を参照して説明する。 Hereinafter, a glass plate manufacturing apparatus and a glass plate manufacturing method according to embodiments of the present invention will be described with reference to the accompanying drawings.
 図1は、本発明の実施形態に係るガラス板の製造装置を例示している。なお、ここで説明するガラス板の製造装置は、ガラス板に加工部(貫通孔、凹部、又は溝部)を形成すると共にガラス板を薄肉化するための装置であるが、加工部の形成及び薄肉化に関する事項は、後に記載するガラス板の製造方法の説明で詳述する。 FIG. 1 illustrates a glass plate manufacturing apparatus according to an embodiment of the present invention. The glass plate manufacturing apparatus described here is an apparatus for forming processed parts (through holes, recesses, or grooves) on a glass plate and thinning the glass plate. Matters related to this will be explained in detail in the explanation of the glass plate manufacturing method described later.
 同図に示すように、ガラス板の製造装置1は、エッチング液Eを貯留するエッチング槽2と、補充液Wを貯留する補充槽3と、補充槽3からエッチング槽2内に補充液Wを供給する供給路4とを備える。 As shown in the figure, the glass plate manufacturing apparatus 1 includes an etching tank 2 that stores an etching solution E, a replenishment tank 3 that stores a replenisher W, and a replenisher W from the replenisher tank 3 into the etching tank 2. A supply path 4 is provided.
 エッチング槽2内のエッチング液Eには、一枚または複数枚のガラス板5が浸漬されている。これにより、これらガラス板5に対してエッチング処理(加工部の形成処理及び薄肉化処理)が施される。 One or more glass plates 5 are immersed in the etching solution E in the etching tank 2. As a result, these glass plates 5 are subjected to etching treatment (processing for forming processed portions and thinning treatment).
 供給路4にはバルブ6が設置されている。バルブ6は、補充槽3からエッチング槽2に供給されるエッチング液Eの流量を調整する流量調整弁であってもよく、供給路4を開通または遮断させるのみの動作を行う開閉弁であってもよい。 A valve 6 is installed in the supply path 4. The valve 6 may be a flow rate adjustment valve that adjusts the flow rate of the etching solution E supplied from the replenishment tank 3 to the etching tank 2, and may be an on-off valve that only operates to open or shut off the supply path 4. Good too.
 さらに、この製造装置1は、エッチング槽2内のエッチング液Eの温度を調整する第一温調装置7と、補充槽3内の補充液Wの温度を調整する第二温調装置8とを備える。 Furthermore, this manufacturing apparatus 1 includes a first temperature control device 7 that adjusts the temperature of the etching solution E in the etching tank 2, and a second temperature control device 8 that adjusts the temperature of the replenisher W in the replenishment tank 3. Be prepared.
 第一温調装置7は、エッチング槽2内のエッチング液Eの温度を検出する第一温度検出手段(第一温度センサ)7aと、第一温度センサ7aからの信号Aに基づいてエッチング槽2内のエッチング液Eを加熱する第一ヒータ7bとから構成される。なお、第一ヒータ7bに代えて、エッチング液Eの加熱及び冷却が可能な第一温調器具を用いてもよい。 The first temperature control device 7 includes a first temperature detection means (first temperature sensor) 7a that detects the temperature of the etching solution E in the etching bath 2, and a first temperature detection means (first temperature sensor) 7a that detects the temperature of the etching solution E in the etching bath 2. and a first heater 7b that heats the etching solution E therein. Note that a first temperature control device capable of heating and cooling the etching liquid E may be used instead of the first heater 7b.
 第二温調装置8は、補充槽3内の補充液Wの温度を検出する第二温度検出手段(第二温度センサ)8aと、第二温度センサ8aからの信号Bに基づいて補充槽3内の補充液Wを加熱する第二ヒータ8bとから構成される。なお、第二ヒータ8bに代えて、補充液Wの加熱及び冷却が可能な第二温調器具を用いてもよい。 The second temperature control device 8 includes a second temperature detection means (second temperature sensor) 8a that detects the temperature of the replenisher W in the replenishment tank 3, and a signal B from the second temperature sensor 8a. and a second heater 8b that heats the replenisher W inside. Note that a second temperature control device capable of heating and cooling the replenisher W may be used instead of the second heater 8b.
 加えて、この製造装置1は、水位調整装置9を備えている。水位調整装置9は、エッチング槽2内のエッチング液Eの水位(液面L1の高さ)を検出する水位検出装置(レベルセンサ)9aと、レベルセンサ9aからの信号Cに基づいて供給路4のバルブ6の動作を制御する制御手段(コントローラ)9bとを備える。コントローラ9bからは、バルブ6を制御するための信号Dが送信される。 In addition, this manufacturing apparatus 1 is equipped with a water level adjustment device 9. The water level adjustment device 9 includes a water level detection device (level sensor) 9a that detects the water level of the etching solution E in the etching tank 2 (the height of the liquid level L1), and a supply path 4 based on a signal C from the level sensor 9a. and a control means (controller) 9b for controlling the operation of the valve 6. A signal D for controlling the valve 6 is transmitted from the controller 9b.
 レベルセンサ9aは、エッチング槽2の側壁2aの上下方向中間部から分岐して上方に向かう分岐槽2b内のエッチング液Eの水位(液面L2の高さ)を検出する。エッチング槽2と分岐槽2bとは内部で連通しているため、エッチング槽2内のエッチング液Eの水位と分岐槽2b内のエッチング液Eの水位とは同一である。したがって、エッチング槽2内のエッチング液Eの水位は、レベルセンサ9aによって検出される。図例では、レベルセンサ9aとして、フロート9aaを有するセンサが使用されているが、これ以外の水位検出装置を使用してもよい。 The level sensor 9a detects the water level (height of the liquid level L2) of the etching liquid E in the branching tank 2b branching from the vertically intermediate portion of the side wall 2a of the etching tank 2 and moving upward. Since the etching tank 2 and the branch tank 2b are internally connected, the water level of the etching liquid E in the etching tank 2 and the water level of the etching liquid E in the branch tank 2b are the same. Therefore, the water level of the etching liquid E in the etching tank 2 is detected by the level sensor 9a. In the illustrated example, a sensor having a float 9aa is used as the level sensor 9a, but other water level detection devices may be used.
 コントローラ9bは、例えば、マイクロコンピュータ(パーソナルコンピュータを含む)やシーケンサ或いはその他の電気回路などで構成される。 The controller 9b is composed of, for example, a microcomputer (including a personal computer), a sequencer, or other electric circuit.
 エッチング槽2と補充槽3とは、同一高さ位置で並列に設置されている。そして、補充槽3内の補充液Wの水位(液面L3の高さ)は、エッチング槽2内のエッチング液Eの水位よりも常に高くなるように設定されている。 The etching tank 2 and the replenishment tank 3 are installed in parallel at the same height position. The water level of the replenisher W in the replenisher tank 3 (height of the liquid level L3) is set to always be higher than the water level of the etching solution E in the etching tank 2.
 ここで、エッチング液Eとしては、HF系エッチング液や、アルカリ系エッチング液などを使用することができる。本実施形態では、エッチング液Eはアルカリ系エッチング液である。アルカリ系エッチング液としては、NaOH溶液又はKOH溶液などが使用される。アルカリ系エッチング液のアルカリ成分の濃度の上限値は、好ましくは20mol/L、より好ましくは18mol/Lであり、下限値は、好ましくは8mol/L、より好ましくは10mol/Lである。 Here, as the etching solution E, an HF-based etching solution, an alkaline-based etching solution, or the like can be used. In this embodiment, the etching solution E is an alkaline etching solution. As the alkaline etching solution, a NaOH solution or a KOH solution is used. The upper limit of the concentration of the alkaline component of the alkaline etching solution is preferably 20 mol/L, more preferably 18 mol/L, and the lower limit is preferably 8 mol/L, more preferably 10 mol/L.
 また、補充液Wとしては、エッチング液Eと組成又は成分が同一で且つエッチング液Eよりも濃度が低い薬液や、純水などを使用することができる。本実施形態では、補充液Wは純水である。 Further, as the replenisher W, a chemical solution having the same composition or components as the etching solution E and having a lower concentration than the etching solution E, pure water, or the like can be used. In this embodiment, the replenisher W is pure water.
 なお、図例では、供給路4をエッチング槽2及び補充槽3の下端部に配設したが、供給路4を配設する高さ位置は、補充槽3の補充液Wの液面L3よりも下方であれば他の位置であってもよい。また、図例では、エッチング槽2の上端が開放されているが、エッチング槽2の上端が開閉可能な蓋体で覆われていてもよい。同様に、図例では、補充槽3の上端が開放されているが、補充槽3の上端が開閉可能な蓋体で覆われていてもよい。 In the illustrated example, the supply channel 4 is arranged at the lower ends of the etching tank 2 and the replenishment tank 3, but the height position at which the supply channel 4 is arranged is higher than the liquid level L3 of the replenisher W in the replenishment tank 3. It may be at any other position as long as it is also below. Further, in the illustrated example, the upper end of the etching tank 2 is open, but the upper end of the etching tank 2 may be covered with an openable and closable lid. Similarly, in the illustrated example, the top end of the replenishment tank 3 is open, but the top end of the replenishment tank 3 may be covered with an openable and closable lid.
 また、エッチング槽2の内部には、エッチング液Eを撹拌するための撹拌装置(図示せず)が設けられていても良い。これにより、補充液Wを供給した後に、エッチング槽2内のエッチング液Eの濃度を速やかに均一にすることができる。 Furthermore, a stirring device (not shown) for stirring the etching solution E may be provided inside the etching tank 2. Thereby, after the replenisher W is supplied, the concentration of the etching solution E in the etching tank 2 can be quickly made uniform.
 次に、本発明の実施形態に係るガラス板の製造方法について説明する。ガラス板の製造方法は、主たる工程として、改質工程と、エッチング工程とを備える。 Next, a method for manufacturing a glass plate according to an embodiment of the present invention will be described. The method for manufacturing a glass plate includes a modification step and an etching step as main steps.
 改質工程は、図2に示すように、第一主面5aと第二主面5bとを有するガラス板5を対象として行われる。具体的に、改質工程は、レーザ装置10から照射されるレーザ光Fにより、ガラス板5における貫通孔の形成予定部5cを改質する工程である。改質された形成予定部5cは、板厚方向に延びる改質部5dを有する。改質部5dは、エッチングされ易い特性を備える。なお、改質部5dは、図例のように、第一主面5aから第二主面5bまで、板厚方向に連続的に形成されていることが好ましいが、板厚方向に間欠的に形成されていてもよい。また、ガラス板5に貫通孔を複数形成する場合は、改質部5dを有する形成予定部5cも複数形成される。 As shown in FIG. 2, the modification step is performed on a glass plate 5 having a first main surface 5a and a second main surface 5b. Specifically, the modification step is a step of modifying the portion 5c of the glass plate 5 where the through hole is to be formed using the laser light F irradiated from the laser device 10. The modified portion 5c to be formed has a modified portion 5d extending in the thickness direction. The modified portion 5d has a characteristic of being easily etched. The modified portion 5d is preferably formed continuously in the thickness direction from the first principal surface 5a to the second principal surface 5b, as shown in the figure, but is formed intermittently in the thickness direction. may be formed. Furthermore, when a plurality of through holes are formed in the glass plate 5, a plurality of planned formation portions 5c having the modified portions 5d are also formed.
 この場合、レーザ光Fは、形成予定部5cに貫通孔を形成できるものであれば、その種類及び照射条件は特に限定されない。本実施形態では、レーザ光Fは、短パルスレーザ光(ナノ秒レーザ光、ピコ秒レーザ光、フェムト秒レーザ光)である。改質部5dの径Gは、レーザ光Fのスポット径などによって調整できる。 In this case, the type and irradiation conditions of the laser beam F are not particularly limited as long as the laser beam F can form a through hole in the formation planned portion 5c. In this embodiment, the laser beam F is a short pulse laser beam (nanosecond laser beam, picosecond laser beam, femtosecond laser beam). The diameter G of the modified portion 5d can be adjusted by adjusting the spot diameter of the laser beam F, etc.
 ガラス板5は、例えば無アルカリガラスからなるものを用いることができ、ガラス組成として、質量%で、SiO2 58~68%、Al23 15~23%(特に17~21%)、B23 0~9%(特に3~7%)、Li2O+Na2O+K2O 0~1%未満(特に0~0.5%)、MgO 1~6%(特に1~4%)、CaO 3~13%(特に5~10%)、SrO 0~10%(特に0.1~3%)、BaO 0.1~15%(特に0.1~5%)を含有することが好ましい。 The glass plate 5 can be made of, for example, alkali-free glass, and the glass composition includes, in mass %, SiO 2 58-68%, Al 2 O 3 15-23% (particularly 17-21%), B. 2 O 3 0 to 9% (especially 3 to 7%), Li 2 O + Na 2 O + K 2 O 0 to less than 1% (especially 0 to 0.5%), MgO 1 to 6% (especially 1 to 4%), It is preferable to contain 3-13% (especially 5-10%) of CaO, 0-10% (especially 0.1-3%) of SrO, and 0.1-15% (especially 0.1-5%) of BaO. .
 エッチング工程は、ガラス板5をエッチングすることにより、改質部5dを有する形成予定部5cに、第一主面5aと第二主面5bとの間を板厚方向に貫通する貫通孔を形成する工程である。具体的に、エッチング工程では、図1に示すエッチング槽2内に貯留されているエッチング液Eに、治具などにセットされた一枚または複数枚のガラス板5を侵漬させ、ガラス板5の第一主面5a及び第二主面5bの両側からエッチングを同時に進行させる。 In the etching step, by etching the glass plate 5, a through hole is formed in the planned formation portion 5c having the modified portion 5d, passing through in the thickness direction between the first principal surface 5a and the second principal surface 5b. This is the process of Specifically, in the etching process, one or more glass plates 5 set in a jig or the like are immersed in an etching solution E stored in an etching bath 2 shown in FIG. Etching is simultaneously proceeded from both sides of the first principal surface 5a and second principal surface 5b.
 エッチング工程の序盤では、図3に示すように、改質部5dを有する形成予定部5cがエッチングにより徐々に除去される。この時点では、形成予定部5cは板厚方向に貫通していない。その後、エッチング工程の中盤で、図4に示すように形成予定部5cが板厚方向に貫通する。そして、エッチング工程の終盤で、貫通孔の孔径の拡大を伴いながら、最終的に図5に示すような貫通孔5eが形成される。この場合、図3~図5に符号5ax、5bxで示す直線は、エッチング前の第一主面5a及び第二主面5bのそれぞれの位置を示している。したがって、エッチング工程の全般を通じて、ガラス板5が薄肉化されていくことになる。 At the beginning of the etching process, as shown in FIG. 3, the planned formation portion 5c having the modified portion 5d is gradually removed by etching. At this point, the portion to be formed 5c has not penetrated in the thickness direction. Thereafter, in the middle of the etching process, the portion 5c to be formed penetrates in the thickness direction, as shown in FIG. At the final stage of the etching process, the diameter of the through hole is enlarged, and a through hole 5e as shown in FIG. 5 is finally formed. In this case, the straight lines indicated by symbols 5ax and 5bx in FIGS. 3 to 5 indicate the respective positions of the first principal surface 5a and the second principal surface 5b before etching. Therefore, the glass plate 5 becomes thinner throughout the etching process.
 この後、図1に示すエッチング槽2から一枚または複数枚のガラス板5の全てが取り出され、所定時間の経過後に、改質工程を終えた後続の一枚または複数枚のガラス板5がエッチング槽2内のエッチング液Eに侵漬され、上記と同様にエッチング工程が実行される。 After this, all of the one or more glass plates 5 are taken out from the etching bath 2 shown in FIG. It is immersed in the etching solution E in the etching bath 2, and the etching process is performed in the same manner as above.
 以上のようなエッチング工程では、図1に示す製造装置1の各構成要素が以下に示すような動作を行う。 In the etching process as described above, each component of the manufacturing apparatus 1 shown in FIG. 1 performs the following operations.
 すなわち、エッチング工程では、エッチング槽2に貯留されたアルカリ系エッチング液E(以下、単にエッチング液Eという)の温度及び補充槽3に貯留された純水Wの温度をそれぞれ、第一温調装置7及び第二温調装置8が調整する。そして、供給路4を通じて補充槽3からエッチング槽2に純水Wを供給する。 That is, in the etching process, the temperature of the alkaline etching solution E (hereinafter simply referred to as etching solution E) stored in the etching tank 2 and the temperature of the pure water W stored in the replenishment tank 3 are controlled by the first temperature controller. 7 and a second temperature control device 8 adjust the temperature. Then, pure water W is supplied from the replenishment tank 3 to the etching tank 2 through the supply path 4.
 この場合、エッチング液Eの温度は、エッチングレートを高めるために80℃~120℃とされる。そして、第二温調装置8による補充槽3内の純水Wの温度調整は、エッチング槽2内のエッチング液Eの温度を元にして行われる。具体的には、エッチング液Eの温度が、純水Wが沸騰しない範囲内での最高温度以下である場合は、第二温調装置8が純水Wの温度をエッチング液Eの温度と同一の温度とする。これに対して、エッチング液Eの温度が、純水Wが沸騰しない範囲内での最高温度を超える場合は、第二温調装置8が純水Wの温度を、純水Wが沸騰しない範囲内での最高温度付近とする。 In this case, the temperature of the etching solution E is set at 80° C. to 120° C. in order to increase the etching rate. The temperature of the pure water W in the replenishment tank 3 is adjusted by the second temperature control device 8 based on the temperature of the etching solution E in the etching tank 2. Specifically, when the temperature of the etching liquid E is below the maximum temperature within the range where the pure water W does not boil, the second temperature controller 8 sets the temperature of the pure water W to be the same as the temperature of the etching liquid E. temperature. On the other hand, if the temperature of the etching solution E exceeds the maximum temperature within the range where the pure water W does not boil, the second temperature controller 8 adjusts the temperature of the pure water W within the range where the pure water W does not boil. The temperature should be around the maximum temperature within the room.
 上述のようにエッチング液Eの温度と純水Wの温度とが同一であっても相違していても、エッチング槽2内のエッチング液Eの温度は、第一温調装置7によって調整されるため、エッチング液Eの温度を一定の温度に維持し易くなる。したがって、純水Wがエッチング槽2内に供給された時点から短時間で第一温調装置7がエッチング液Eを適温にすることができる。これにより、エッチングレートの変動が抑制され、複数枚のガラス板5に貫通孔を形成する処理のばらつきが低減する。 As described above, whether the temperature of the etching solution E and the temperature of the pure water W are the same or different, the temperature of the etching solution E in the etching bath 2 is adjusted by the first temperature controller 7. Therefore, it becomes easier to maintain the temperature of the etching solution E at a constant temperature. Therefore, the first temperature controller 7 can bring the etching liquid E to an appropriate temperature in a short time from the time when the pure water W is supplied into the etching bath 2. As a result, fluctuations in the etching rate are suppressed, and variations in the process of forming through holes in the plurality of glass plates 5 are reduced.
 さらに、エッチング工程では、エッチング槽2内のエッチング液E中の水分が蒸発するため、この蒸発によるエッチング液Eの減量分に応じて、補充槽3からエッチング槽2に純水Wを供給する。詳しくは、水位調整装置9のレベルセンサ9aがエッチング槽2内のエッチング液Eの水位を検出し、レベルセンサ9aからの信号Cに基づいてコントローラ9bがバルブ6を制御することで、補充槽3からエッチング槽2に適量の純水Wを供給する。コントローラ9bがバルブ6を制御するだけで補充槽3からエッチング槽2に純水Wを供給できるのは、純水Wの水位がエッチング液Eの水位よりも常に高いからである。なお、純水Wの水位をエッチング液Eの水位よりも常に高くするために、補充槽3内にはその上端の開口部を通じて純水Wが補充される。 Further, in the etching process, water in the etching solution E in the etching tank 2 evaporates, so pure water W is supplied from the replenishment tank 3 to the etching tank 2 in accordance with the amount of the amount of the etching solution E lost due to this evaporation. Specifically, the level sensor 9a of the water level adjustment device 9 detects the water level of the etching solution E in the etching tank 2, and the controller 9b controls the valve 6 based on the signal C from the level sensor 9a, so that the replenishment tank 3 An appropriate amount of pure water W is supplied to the etching bath 2 from the etching tank 2. The reason why the controller 9b can supply the pure water W from the refill tank 3 to the etching tank 2 simply by controlling the valve 6 is because the water level of the pure water W is always higher than the water level of the etching solution E. Note that in order to keep the water level of the pure water W higher than the water level of the etching solution E, the replenishment tank 3 is replenished with pure water W through an opening at its upper end.
 ここで、バルブ6が流量調整弁で構成される場合は、補充槽3からエッチング槽2に純水Wが連続的に流れるようにし、その時の純水Wの流量をコントローラ9bが制御する。このとき、コントローラ9bは、エッチング液Eの水位が、予め設定された第一基準値に維持されるようにバルブ6の開度を調整する。これにより、エッチング液Eの水位は、常に第一基準値に維持される。 Here, when the valve 6 is constituted by a flow rate adjustment valve, the pure water W is made to flow continuously from the replenishment tank 3 to the etching tank 2, and the flow rate of the pure water W at that time is controlled by the controller 9b. At this time, the controller 9b adjusts the opening degree of the valve 6 so that the water level of the etching liquid E is maintained at a preset first reference value. Thereby, the water level of the etching liquid E is always maintained at the first reference value.
 一方、バルブ6が開閉弁で構成される場合は、コントローラ9bが所定時間おきに供給路4を開通させて、補充槽3からエッチング槽2に間欠的に純水を供給する。このとき、コントローラ9bは、次に示すような供給路4の開閉状態になるようにバルブ6を制御する。すなわち、エッチング液Eの水位が第一基準値から下降していく際には、水位がガラス板5のエッチング処理に支障を来さない範囲内の所定位置(予め基準値を設定してもよい)に下降するまで供給路4を遮断させておく。水位が下降して上記所定位置に達した時には、水位が第一基準値に上昇するまで供給路4を開通させておく。水位が上昇して第一基準値に達した時には、供給路4を遮断させる。このような制御が行われることで、エッチング液Eの水位は、所定時間おきに第一基準値に維持される。 On the other hand, when the valve 6 is configured as an on-off valve, the controller 9b opens the supply path 4 at predetermined intervals to intermittently supply pure water from the replenishment tank 3 to the etching tank 2. At this time, the controller 9b controls the valve 6 so that the supply path 4 is opened and closed as shown below. That is, when the water level of the etching liquid E decreases from the first reference value, the water level is set at a predetermined position (a reference value may be set in advance) within a range that does not interfere with the etching process of the glass plate 5. ), the supply path 4 is kept shut off until it descends to .). When the water level falls and reaches the predetermined position, the supply channel 4 is kept open until the water level rises to the first reference value. When the water level rises and reaches the first reference value, the supply path 4 is shut off. By performing such control, the water level of the etching liquid E is maintained at the first reference value at predetermined time intervals.
 以上のようにエッチング液Eからの水分の蒸発に応じて、純水Wがエッチング槽2に供給されることで、エッチング槽2内のエッチング液Eの濃度が一定に維持される。また、エッチングレートを高めるためにエッチング液Eを高温にすることで、水分の蒸発量が多くなっても、これに応じて補充槽3から多量の純水Wがエッチング槽2に供給されるため、エッチング液Eの濃度は一定に維持される。そして、既述のようにエッチング液Eの温度が一定に維持される事と相俟って、エッチングレートの変動が大幅に抑制される。 As described above, the pure water W is supplied to the etching tank 2 in accordance with the evaporation of water from the etching solution E, so that the concentration of the etching solution E in the etching tank 2 is maintained constant. Furthermore, even if the amount of water evaporation increases by heating the etching solution E to a high temperature in order to increase the etching rate, a large amount of pure water W is supplied from the replenishment tank 3 to the etching tank 2 accordingly. , the concentration of etching solution E is maintained constant. Coupled with the fact that the temperature of the etching solution E is maintained constant as described above, fluctuations in the etching rate are significantly suppressed.
 さらに、この製造方法では、一枚または複数枚のガラス板5をエッチング液Eに浸漬させている時と、一枚または複数枚の全てのガラス板5をエッチング液Eから取り出している時とで、エッチング液Eの水位の基準値を異ならせている。詳しくは、エッチング液Eに全てのガラス板5を浸漬させている時は、上述の第一基準値に基づいてエッチング液Eの水位を調整する。一方、エッチング液Eから全てのガラス板5を取り出している時には、上述の第一基準値よりも低い第二基準値に基づいてエッチング液Eの水位を調整する。 Furthermore, in this manufacturing method, there are two times when one or more glass plates 5 are immersed in the etching liquid E and when all one or more glass plates 5 are taken out from the etching liquid E. , the reference value of the water level of the etching solution E is made different. Specifically, when all the glass plates 5 are immersed in the etching liquid E, the water level of the etching liquid E is adjusted based on the above-mentioned first reference value. On the other hand, when all the glass plates 5 are being taken out from the etching solution E, the water level of the etching solution E is adjusted based on the second reference value that is lower than the above-mentioned first reference value.
 詳述すると、エッチング液Eから全てのガラス板5を取り出した際には、それらガラス板5の体積に相当する量(治具などの体積に相当する量を含む)と、ガラス板5の取り出しに伴いガラス板5に付着してエッチング槽2外に持ち出されるエッチング液Eの持ち出し量との合計分だけエッチング液Eの水位が下降する。この場合、全てのガラス板5を取り出している間中、上述の第一基準値に基づいて水位を調整したならば、エッチング槽2内への純水Wの供給量が増加して、エッチング液Eの濃度が低下する。そこで、全てのガラス板5を取り出している間は、上述の第一基準値よりも上記合計分に相当する数値だけ低い第二基準値に基づいて水位を調整する。これにより、全てのガラス板5を取り出している時のエッチング液Eの濃度を、全てのガラス板5を浸漬させている時のエッチング液Eの濃度と同等の濃度にすることができる。その結果、後続の一枚または複数枚のガラス板5をエッチング液Eに侵浸させた場合に、後続の一枚または複数枚のガラス板5に対して、先行する一枚または複数枚のガラス板5と同等に貫通孔を形成する処理を施すことが可能となる。なお、後続のエッチング処理を開始する際には、第一基準値を上記持ち出し量に相当する数値だけ低くなるように設定変更することが好ましい。このようにすれば、第一基準値及び第二基準値の両者が、エッチング処理を行うたびに上記持ち出し量に相当する数値だけ低くなっていく。これにより、エッチング槽2内では、エッチング液Eの量が上記持ち出し量だけ常に減っていくように調整されるため、エッチング液Eの濃度はより確実に一定の濃度に維持される。 To be more specific, when all the glass plates 5 are taken out from the etching solution E, an amount equivalent to the volume of the glass plates 5 (including an amount equivalent to the volume of the jig etc.) and a removal amount of the glass plates 5 are removed. Accordingly, the water level of the etching liquid E is lowered by the total amount including the amount of the etching liquid E that adheres to the glass plate 5 and is taken out of the etching bath 2. In this case, if the water level is adjusted based on the above-mentioned first reference value while all the glass plates 5 are being taken out, the amount of pure water W supplied into the etching tank 2 will increase and the etching solution will be The concentration of E decreases. Therefore, while all the glass plates 5 are being taken out, the water level is adjusted based on a second reference value that is lower than the first reference value by a value corresponding to the total amount. Thereby, the concentration of the etching liquid E when all the glass plates 5 are taken out can be made equal to the concentration of the etching liquid E when all the glass plates 5 are immersed. As a result, when one or more succeeding glass plates 5 are impregnated with the etching solution E, the preceding one or more glass plates 5 are It becomes possible to perform a process of forming through holes in the same manner as in the plate 5. Note that, when starting the subsequent etching process, it is preferable to change the setting so that the first reference value is lowered by a value corresponding to the above-mentioned amount of removal. In this way, both the first reference value and the second reference value are lowered by a numerical value corresponding to the above-mentioned amount taken out each time an etching process is performed. Thereby, the amount of etching liquid E is adjusted to constantly decrease by the amount taken out in the etching bath 2, so that the concentration of etching liquid E is more reliably maintained at a constant concentration.
 なお、ガラス板5のエッチング液Eへの浸漬動作及びガラス板5のエッチング液Eからの取り出し動作を行っている際は、エッチング槽2への純水Wの供給を停止することが好ましい。これらの動作を行う際にエッチング槽2への純水Wの供給を行うと、第一基準及び第二基準を正確に設定することができない。 Note that while the glass plate 5 is immersed in the etching liquid E and the glass plate 5 is being taken out from the etching liquid E, it is preferable to stop supplying the pure water W to the etching tank 2. If pure water W is supplied to the etching tank 2 when performing these operations, the first reference and the second reference cannot be set accurately.
 以上、本発明の実施形態に係るガラス板の製造装置及びガラス板の製造方法について説明したが、本発明の実施の形態はこれに限定されるものではなく、本発明の要旨を逸脱しない範囲で種々変更することが可能である。 Although the glass plate manufacturing apparatus and the glass plate manufacturing method according to the embodiments of the present invention have been described above, the embodiments of the present invention are not limited thereto, and may be provided without departing from the gist of the present invention. Various changes are possible.
 上記実施形態では、補充槽3の上端の開口部を通じて補充槽3内に純水Wを補充するようにしたが、例えば図6に示すように、補充槽3の側壁3aの上部に、バルブ11が設置された補充路12を連結し、純水供給源13から補充路12を通じて補充槽3内に純水Wを補充するようにしてもよい。この場合、補充槽3についても、エッチング槽2についての構成と同様の水位調整装置を設けて、水位検出手段(レベルセンサ)からの信号に基づいてコントローラがバルブ6を制御することで、補充槽3内の純水Wの水位を適正な水位にするようにしてもよい。ここで使用されるコントローラは、分岐槽2bに配置されたレベルセンサ9aからの信号Cを受信するコントローラ9bであってもよく、他のコントローラであってもよい。なお、補充槽3に水位調整装置を設ける構成は、補充槽3の上端の開口部を通じて補充路12から純水Wを補充槽3内に補充するように構成した場合にも適用可能である。 In the above embodiment, the replenishment tank 3 is replenished with pure water W through the opening at the upper end of the replenishment tank 3. For example, as shown in FIG. It is also possible to connect the replenishment path 12 in which the deionized water supply source 13 is installed and replenish the replenishment tank 3 with pure water W through the replenishment path 12 from the pure water supply source 13. In this case, the replenishment tank 3 is also provided with a water level adjustment device similar to the configuration of the etching tank 2, and the controller controls the valve 6 based on the signal from the water level detection means (level sensor). The water level of pure water W in 3 may be set to an appropriate water level. The controller used here may be the controller 9b that receives the signal C from the level sensor 9a arranged in the branch tank 2b, or may be another controller. Note that the configuration in which the water level adjustment device is provided in the replenishment tank 3 can also be applied to a configuration in which the replenishment tank 3 is refilled with pure water W from the replenishment path 12 through the opening at the upper end of the replenishment tank 3.
 上記実施形態では、補充槽3内の純水Wの水位がエッチング槽2内のエッチング液Eの水位よりも常に高くなるようにしたが、例えば図7に示すように、供給路4にポンプPを設置して、補充槽3からエッチング槽2にポンプPによって純水Wが強制的に送られるようにすれば、上記両者の水位は何れが高くてもよい。ポンプPの動作は、コントローラ9bからの信号Hに基づいて制御される。この場合、ポンプPが純水Wの流量を調整する機能や、純水Wの流れを許容及び阻止する機能を有していれば、同図に示すバルブ6を供給路4に設置しなくてもよい。 In the above embodiment, the water level of the pure water W in the replenishment tank 3 is always higher than the water level of the etching solution E in the etching tank 2, but as shown in FIG. As long as the pure water W is forcibly sent from the replenishment tank 3 to the etching tank 2 by the pump P, the water level of both of the above may be high. The operation of pump P is controlled based on signal H from controller 9b. In this case, if the pump P has the function of adjusting the flow rate of the pure water W and the function of allowing and blocking the flow of the pure water W, the valve 6 shown in the figure need not be installed in the supply path 4. Good too.
 上記実施形態では、エッチング槽2と補充槽3とを同一の高さ位置に配列させたが、この両者2、3を異なる高さ位置に配列させてもよい。具体例として、図8に示すように、補充槽3をエッチング槽2の上方に配列させてもよい。この場合には、エッチング槽2の上方に配列された補充槽3の底壁3bに、下端が開放する供給路4が連結され、この供給路4にバルブ6が設置される。ここでの構成についても、補充槽3内に純水Wを補充するための手段として、既述の補充路12や、エッチング槽2についての構成と同様の水位調整装置などを設けてもよい。 In the above embodiment, the etching tank 2 and the replenishment tank 3 are arranged at the same height position, but both 2 and 3 may be arranged at different height positions. As a specific example, as shown in FIG. 8, the replenishment tank 3 may be arranged above the etching tank 2. In this case, a supply path 4 whose lower end is open is connected to the bottom wall 3b of the replenishment tank 3 arranged above the etching tank 2, and a valve 6 is installed in this supply path 4. Regarding the configuration here, as a means for replenishing pure water W into the replenishment tank 3, the above-mentioned replenishment path 12 or a water level adjustment device similar to the configuration for the etching tank 2 may be provided.
 なお、図6~図8においては、図1に示す製造装置1と共通の構成要素について同一符号を付した。 Note that in FIGS. 6 to 8, the same reference numerals are given to the same components as those in the manufacturing apparatus 1 shown in FIG. 1.
 上記実施形態では、複数枚のガラス板5をエッチング液Eに侵漬させ且つエッチング液Eから取り出すようにしたが、一枚のガラス板5をエッチング液Eに侵漬させ且つエッチング液Eから取り出すようにした場合も、同様にして本発明を適用することができる。 In the above embodiment, a plurality of glass plates 5 are immersed in the etching liquid E and taken out from the etching liquid E, but one glass plate 5 is immersed in the etching liquid E and taken out from the etching liquid E. Even in this case, the present invention can be applied in the same manner.
 上記実施形態では、ガラス板5を縦姿勢でエッチング液Eに侵漬させたが、ガラス板5を横姿勢(水平姿勢もしくは略水平姿勢)で侵漬させてもよい。 In the above embodiment, the glass plate 5 is immersed in the etching solution E in a vertical position, but the glass plate 5 may be immersed in a horizontal position (horizontal position or substantially horizontal position).
 上記実施形態では、ガラス板5に改質工程を行った後にエッチング工程を行い、貫通孔形成及び薄肉化を行ったが、これに限定されない。改質工程を行うことなくエッチング工程のみを行い、ガラス板5の薄肉化のみを行っても良い。 In the above embodiment, the etching process was performed after the modification process was performed on the glass plate 5 to form through holes and reduce the thickness, but the present invention is not limited to this. Only the etching process may be performed without performing the modification process, and only the thickness of the glass plate 5 may be reduced.
 上記実施形態では、ガラス板5に貫通孔5eを形成したが、これに限定されない。ガラス板5の第一主面5a及び第二主面5bの少なくとも一方の主面に、凹部(非貫通孔)を形成しても良い。また、複数の凹部(非貫通孔)を結合させるなどして、溝部を形成しても良い。さらに、これら貫通孔5e、凹部(非貫通孔)、及び溝部のうちの一種以上をガラス板5に形成してもよい。 In the above embodiment, the through hole 5e is formed in the glass plate 5, but the present invention is not limited thereto. A recess (non-through hole) may be formed in at least one of the first main surface 5a and the second main surface 5b of the glass plate 5. Alternatively, the groove portion may be formed by combining a plurality of recesses (non-through holes). Furthermore, one or more of these through holes 5e, recesses (non-through holes), and grooves may be formed in the glass plate 5.
 ここで、ガラス板5に凹部を形成する場合は、例えば、図2に基づいて既に説明したように、改質工程でガラス板5に改質部5dを形成した後、図3に示すように、ガラス板5の第一主面5a及び第二主面5bにそれぞれ凹部が形成された時点で、エッチング工程を終えるようにしてもよい。また、例えば、改質工程でガラス板5の第一主面5a及び第二主面5bの少なくとも一方の主面から凹部の深さに対応する長さの改質部5dを形成した後、エッチング工程でガラス板5の第一主面5a及び第二主面5bの少なくとも一方の主面に凹部を形成するようにしてもよい。以上のようにすることで、ガラス板5に凹部を形成する処理のばらつきが低減する。また、図9に示すように、ガラス板5に凹部や溝部を形成する際は、改質工程において、ガラス板5の一方の主面から板厚方向の中間部まで、改質部5dを形成してもよい。改質部の主面からの深さは、凹部や溝部の深さに応じて調整することが好ましい。このように改質部5dを形成する際は、レーザ光Fの焦点がガラス板5の外部に位置するよう調整してもよい。 Here, when forming a recessed part in the glass plate 5, for example, as already explained based on FIG. 2, after forming the modified part 5d in the glass plate 5 in the modification process, as shown in FIG. The etching process may be completed when the recesses are formed on the first main surface 5a and the second main surface 5b of the glass plate 5, respectively. For example, after forming a modified portion 5d having a length corresponding to the depth of the recess from at least one of the first main surface 5a and second main surface 5b of the glass plate 5 in the modification step, etching is performed. You may make it form a recessed part in at least one main surface of the 1st main surface 5a and the 2nd main surface 5b of the glass plate 5 in a process. By doing as described above, variations in the process of forming recesses in the glass plate 5 are reduced. In addition, as shown in FIG. 9, when forming recesses and grooves in the glass plate 5, in the modification process, a modified part 5d is formed from one main surface of the glass plate 5 to the middle part in the thickness direction. You may. The depth of the modified portion from the main surface is preferably adjusted depending on the depth of the recess or groove. When forming the modified portion 5d in this manner, the focus of the laser beam F may be adjusted to be located outside the glass plate 5.
 一方、ガラス板5に溝部を形成する場合は、例えば、改質工程でガラス板5の第一主面5a及び第二主面5bの少なくとも一方の主面の複数箇所に改質部5dを形成した後、エッチング工程で複数の凹部(上述と同様に形成される複数の凹部)を相互に結合させる(繋がらせる)ことで溝部を形成するようにしてもよい。また、例えば、改質工程で第一主面5a及び第二主面5bの少なくとも一方の主面に沿って線状に延びる改質部5dを形成した後、エッチング工程でのエッチング処理によって第一主面5a及び第二主面5bの少なくとも一方の主面に溝部を形成するようにしてもよい。以上のようにすることで、ガラス板5に溝部を形成する処理のばらつきが低減する。 On the other hand, when forming grooves in the glass plate 5, for example, in the modification step, modified parts 5d are formed at multiple locations on at least one of the first main surface 5a and the second main surface 5b of the glass plate 5. After that, the groove portion may be formed by combining (connecting) a plurality of recesses (a plurality of recesses formed in the same manner as described above) with each other in an etching process. For example, after forming a modified portion 5d linearly extending along at least one of the first main surface 5a and the second main surface 5b in the modification step, the first main surface 5d may be etched in the etching step. A groove may be formed in at least one of the main surface 5a and the second main surface 5b. By doing the above, variations in the process of forming grooves in the glass plate 5 are reduced.
1     ガラス板の製造装置
2     エッチング槽
3     補充槽
4     供給路
5     ガラス板
5a   第一主面
5b   第二主面
5c   形成予定部
5d   改質部
5e   貫通孔
7     第一温調装置
8     第二温調装置
9     水位調整装置
E     エッチング液
L1   液面
L3   液面
W     純水(補充液)
1 Glass plate manufacturing apparatus 2 Etching tank 3 Replenishment tank 4 Supply path 5 Glass plate 5a First main surface 5b Second main surface 5c Formation planned section 5d Modification section 5e Through hole 7 First temperature control device 8 Second temperature control Device 9 Water level adjustment device E Etching solution L1 Liquid level L3 Liquid level W Pure water (replenisher)

Claims (12)

  1.  第一主面と、第二主面と、加工部とを有するガラス板の製造方法であって、
     前記加工部は、前記第一主面と前記第二主面との間を貫通する貫通孔、並びに、前記第一主面及び前記第二主面の少なくとも一方の主面に設けられる凹部及び溝部のうちの一種以上を含み、
     前記加工部の形成予定部をレーザ光の照射により改質する改質工程と、エッチング槽に貯留されて第一温調装置により温度が調整されたエッチング液にガラス板を浸漬させてエッチングすることで前記形成予定部に前記加工部を形成するエッチング工程とを備え、
     前記エッチング工程では、補充槽に貯留されて第二温調装置により温度が調整された補充液を前記エッチング槽内に供給することを特徴とするガラス板の製造方法。
    A method for manufacturing a glass plate having a first main surface, a second main surface, and a processed part,
    The processed portion includes a through hole penetrating between the first main surface and the second main surface, and a recess and a groove provided in at least one of the first main surface and the second main surface. Contains one or more of the following:
    a modification step of modifying the portion where the processing portion is to be formed by irradiation with laser light; and etching by immersing the glass plate in an etching solution stored in an etching tank and whose temperature is adjusted by a first temperature controller. and an etching step of forming the processed portion in the planned formation portion,
    In the etching step, a replenishment solution stored in a replenishment tank and whose temperature is adjusted by a second temperature control device is supplied into the etching tank.
  2.  前記加工部は、前記貫通孔である請求項1に記載のガラス板の製造方法。 The method for manufacturing a glass plate according to claim 1, wherein the processed portion is the through hole.
  3.  前記加工部は、前記凹部又は前記溝部である請求項1に記載のガラス板の製造方法。 The method for manufacturing a glass plate according to claim 1, wherein the processed portion is the recess or the groove.
  4.  前記第一温調装置により調整された前記エッチング槽内のエッチング液の温度を元にして、前記第二温調装置が前記補充槽内の補充液の温度を調整する請求項1~3の何れかに記載のガラス板の製造方法。 Any one of claims 1 to 3, wherein the second temperature control device adjusts the temperature of the replenisher in the replenishment tank based on the temperature of the etching solution in the etching tank adjusted by the first temperature control device. A method for producing a glass plate as described in .
  5.  前記エッチング槽内のエッチング液の水位を水位検出装置により検出し、その検出結果に基づいて前記補充槽から前記エッチング槽内へ補充液を供給することで、前記エッチング槽内のエッチング液の水位を調整する請求項1~3の何れかに記載のガラス板の製造方法。 The water level of the etching solution in the etching tank is detected by a water level detection device, and the replenishment solution is supplied from the replenishment tank into the etching tank based on the detection result, thereby controlling the water level of the etching solution in the etching tank. The method for manufacturing a glass plate according to any one of claims 1 to 3, wherein the glass plate is adjusted.
  6.  前記ガラス板を前記エッチング液に浸漬させる時から前記ガラス板を前記エッチング液から取り出す時までの期間と、前記ガラス板を前記エッチング液から取り出す時から前記ガラス板を前記エッチング液に浸漬させる時までの期間とで、調整される水位が異なる請求項5に記載のガラス板の製造方法。 A period from when the glass plate is immersed in the etching solution to when the glass plate is taken out from the etching liquid, and from when the glass plate is taken out from the etching liquid until when the glass plate is immersed in the etching liquid. 6. The method for manufacturing a glass plate according to claim 5, wherein the adjusted water level is different depending on the period.
  7.  前記エッチング槽内のエッチング液は、アルカリ系エッチング液であり、
     前記補充槽から前記エッチング槽内へ補充液を供給することで、前記エッチング槽内のエッチング液の濃度を調整する請求項1~3の何れかに記載のガラス板の製造方法。
    The etching solution in the etching tank is an alkaline etching solution,
    4. The method for manufacturing a glass plate according to claim 1, wherein the concentration of the etching solution in the etching tank is adjusted by supplying a replenisher into the etching tank from the replenisher tank.
  8.  前記アルカリ系エッチング液のアルカリ成分の濃度は、8mol/L以上20mol/L以下である請求項7に記載のガラス板の製造方法。 The method for manufacturing a glass plate according to claim 7, wherein the concentration of the alkaline component of the alkaline etching solution is 8 mol/L or more and 20 mol/L or less.
  9.  前記補充槽内の補充液は、純水である請求項1~3の何れかに記載のガラス板の製造方法。 The method for manufacturing a glass plate according to any one of claims 1 to 3, wherein the replenisher in the replenisher tank is pure water.
  10.  前記エッチング槽内のエッチング液からの水分の蒸発による該エッチング液の減量分に応じて、前記補充槽から前記エッチング槽へ供給する前記純水の量を調整する請求項9に記載のガラス板の製造方法。 The glass plate according to claim 9, wherein the amount of the pure water supplied from the replenishment tank to the etching tank is adjusted according to the amount of loss of the etching solution due to evaporation of water from the etching solution in the etching tank. Production method.
  11.  エッチング槽に貯留されて第一温調装置により温度が調整されたエッチング液にガラス板を浸漬させてエッチングすることで前記ガラス板を薄肉化するエッチング工程を備え、
     前記エッチング工程では、補充槽に貯留されて第二温調装置により温度が調整された補充液を前記エッチング槽内に供給するガラス板の製造方法。
    an etching step of thinning the glass plate by immersing the glass plate in an etching solution stored in an etching tank and having its temperature adjusted by a first temperature controller;
    In the etching step, a replenisher solution stored in a replenishment tank and whose temperature is adjusted by a second temperature control device is supplied into the etching tank.
  12.  内部に貯留したエッチング液にガラス板を浸漬させてエッチングを行うエッチング槽と、
     前記エッチング槽内に供給する補充液を貯留する補充槽と、
     前記補充液を前記エッチング槽内へ供給する供給路と、
     前記エッチング槽内のエッチング液の温度を調整する第一温調装置と、
     前記補充槽内の前記補充液の温度を調整する第二温調装置と、を備えるガラス板の製造装置。
    an etching tank that performs etching by immersing a glass plate in an etching solution stored inside;
    a replenishment tank that stores a replenishment solution to be supplied into the etching tank;
    a supply path for supplying the replenisher into the etching tank;
    a first temperature controller that adjusts the temperature of the etching solution in the etching bath;
    A glass plate manufacturing apparatus, comprising: a second temperature controller that adjusts the temperature of the replenisher in the replenisher tank.
PCT/JP2023/014713 2022-05-17 2023-04-11 Method for manufacturing glass plate, and device for manufacturing glass plate WO2023223716A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237228A (en) * 2005-02-24 2006-09-07 Dainippon Screen Mfg Co Ltd Substrate processing equipment and its method
JP2013189339A (en) * 2012-03-13 2013-09-26 Hoya Corp Method and apparatus for manufacturing cover glass for electronic device
JP2019038723A (en) * 2017-08-28 2019-03-14 日本電気硝子株式会社 Glass substrate for laser assistance etching, and method for producing perforated glass substrate using the same
WO2020241805A1 (en) * 2019-05-30 2020-12-03 日本板硝子株式会社 Microstructured glass substrate, electroconductive layer-equipped glass substrate, and microstructured glass substrate production method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006237228A (en) * 2005-02-24 2006-09-07 Dainippon Screen Mfg Co Ltd Substrate processing equipment and its method
JP2013189339A (en) * 2012-03-13 2013-09-26 Hoya Corp Method and apparatus for manufacturing cover glass for electronic device
JP2019038723A (en) * 2017-08-28 2019-03-14 日本電気硝子株式会社 Glass substrate for laser assistance etching, and method for producing perforated glass substrate using the same
WO2020241805A1 (en) * 2019-05-30 2020-12-03 日本板硝子株式会社 Microstructured glass substrate, electroconductive layer-equipped glass substrate, and microstructured glass substrate production method

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