JP5715546B2 - Substrate processing apparatus, substrate processing method, and computer-readable storage medium storing substrate processing program - Google Patents

Substrate processing apparatus, substrate processing method, and computer-readable storage medium storing substrate processing program Download PDF

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JP5715546B2
JP5715546B2 JP2011235563A JP2011235563A JP5715546B2 JP 5715546 B2 JP5715546 B2 JP 5715546B2 JP 2011235563 A JP2011235563 A JP 2011235563A JP 2011235563 A JP2011235563 A JP 2011235563A JP 5715546 B2 JP5715546 B2 JP 5715546B2
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裕司 田中
裕司 田中
宏展 百武
宏展 百武
崇 烏野
崇 烏野
史洋 上村
史洋 上村
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Tokyo Electron Ltd
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本発明は、処理槽に貯留した処理液に基板を浸漬させて基板の処理を行う基板処理装置及び基板処理方法並びに基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体に関するものである。   The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate by immersing a substrate in a processing solution stored in a processing tank, and a computer-readable storage medium storing a substrate processing program.

従来より、半導体部品やフラットパネルディスプレイなどを製造する場合には、各種の基板処理装置を用いて半導体ウエハや液晶用基板などの基板にエッチング等の各種の処理を施している。   Conventionally, when manufacturing a semiconductor component, a flat panel display, or the like, various processes such as etching are performed on a substrate such as a semiconductor wafer or a liquid crystal substrate using various substrate processing apparatuses.

この基板処理装置としては、薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって処理液の濃度を設定温度における飽和濃度とし、その処理液に基板を浸漬させて基板の処理を行う基板処理装置が知られている。たとえば、特許文献1に開示された基板処理装置(エッチング装置)では、処理槽に貯留した処理液(エッチング液)に基板を浸漬させて、基板の表面に形成した窒化膜をエッチングする処理を行っている。   In this substrate processing apparatus, a processing liquid obtained by diluting a chemical liquid with a diluting liquid is boiled at a set temperature to set the concentration of the processing liquid to a saturated concentration at the set temperature, and the substrate is processed by immersing the substrate in the processing liquid. A substrate processing apparatus is known. For example, in the substrate processing apparatus (etching apparatus) disclosed in Patent Document 1, the substrate is immersed in a processing liquid (etching liquid) stored in a processing tank and a nitride film formed on the surface of the substrate is etched. ing.

この基板処理装置では、処理液としてリン酸を純水で所定濃度に希釈したリン酸水溶液を用いている。   In this substrate processing apparatus, a phosphoric acid aqueous solution in which phosphoric acid is diluted with pure water to a predetermined concentration is used as a processing liquid.

そして、上記基板処理装置では、処理液としてのリン酸水溶液を所定濃度とするために、リン酸水溶液の濃度を直接管理するのではなく、リン酸を純水で希釈したリン酸水溶液を処理槽の内部において設定温度(たとえば、160℃)で沸騰させ、リン酸水溶液の濃度をその設定温度(沸点)におけるリン酸水溶液の飽和濃度(160℃の場合は85%)としている。   And in the said substrate processing apparatus, in order to make the phosphoric acid aqueous solution as a process liquid into a predetermined density | concentration, it is not managing the density | concentration of phosphoric acid aqueous solution directly, but the phosphoric acid aqueous solution which diluted phosphoric acid with the pure water is a processing tank. Is boiled at a set temperature (for example, 160 ° C.), and the concentration of the phosphoric acid aqueous solution is set to the saturation concentration (85% in the case of 160 ° C.) at the set temperature (boiling point).

上記基板処理装置では、リン酸水溶液で繰返し基板のエッチング処理を行うと、リン酸水溶液中のシリコン濃度が増加し、シリコン酸化膜とシリコン窒化膜との選択比が変化してしまい、基板のエッチング処理を良好に行えなくなる。   In the above-described substrate processing apparatus, when the substrate is repeatedly etched with the phosphoric acid aqueous solution, the silicon concentration in the phosphoric acid aqueous solution increases, and the selectivity between the silicon oxide film and the silicon nitride film changes, thereby etching the substrate. Processing cannot be performed satisfactorily.

そこで、上記従来の基板処理装置では、処理液で基板を繰返し処理した場合、処理槽から所定量の処理液を排出し、その後、排出した量に相当する量の処理液(リン酸と純水)を処理槽に補充する。この場合、補充する処理液は、所定濃度(たとえば、85%)となる比率でリン酸と純水とをそれぞれ処理槽に補充する。   Therefore, in the conventional substrate processing apparatus, when the substrate is repeatedly processed with the processing liquid, a predetermined amount of the processing liquid is discharged from the processing tank, and then an amount of the processing liquid (phosphoric acid and pure water) corresponding to the discharged amount is discharged. ) To the treatment tank. In this case, the treatment liquid to be replenished is replenished with phosphoric acid and pure water to the treatment tank at a predetermined concentration (for example, 85%).

特開2001−23952号公報JP 2001-23952 A

上記従来の基板処理装置では、常に同一の設定温度で処理液を沸騰させることで処理液の濃度を所定濃度(飽和濃度)とする場合には、処理液の濃度を良好に管理することができる。   In the above conventional substrate processing apparatus, when the concentration of the processing liquid is set to a predetermined concentration (saturated concentration) by always boiling the processing liquid at the same set temperature, the concentration of the processing liquid can be managed well. .

ところが、上記基板処理装置では、基板処理の内容(たとえば、エッチングレートなど。)を変更できるようにするために、処理液の濃度を低くできるようにした場合(たとえば、68%。)、すなわち、設定温度を低くできるようにした場合(68%の場合は120℃。)、高い濃度の処理液(たとえば、85%。)を繰返し補充すると、処理槽の内部の処理液の濃度が徐々に増加してしまい、基板の処理を良好に行うことができなくなるおそれがある。   However, in the above substrate processing apparatus, in order to be able to change the content of the substrate processing (for example, etching rate), the concentration of the processing solution can be decreased (for example, 68%), that is, When the set temperature can be lowered (120 ° C in the case of 68%), the concentration of the treatment liquid inside the treatment tank gradually increases when a high concentration treatment liquid (for example, 85%) is replenished repeatedly. As a result, the substrate may not be processed satisfactorily.

そこで、本発明では、薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、前記処理液に基板を浸漬させて前記基板の処理を行う基板処理装置において、前記基板を前記処理液で処理する処理槽と、前記処理槽に貯留した前記処理液を前記設定温度に加熱する処理液加熱手段と、前記処理槽から前記処理液を排出する処理液排出手段と、前記処理槽に前記処理液を補充する処理液補充手段と、前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更する設定温度変更手段と、前記処理液排出手段と前記処理液補充手段を制御する制御手段とを有し、制御手段は、前記基板を処理する処理液の濃度を変更する場合に、前記処理液排出手段で所定量の前記処理液を前記処理槽から排出し、設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理液補充手段から前記処理槽に補充するよう制御することにした。
Therefore, in the present invention, the concentration of the treatment liquid is brought to a saturation concentration at the set temperature by boiling a treatment liquid obtained by diluting a chemical solution with a diluent, and the substrate is immersed in the treatment liquid to treat the substrate. In the substrate processing apparatus, the processing tank for processing the substrate with the processing liquid, the processing liquid heating means for heating the processing liquid stored in the processing tank to the set temperature, and the processing liquid from the processing tank. A boiling point at which the concentration of the processing liquid to be changed becomes a saturated concentration when the concentration of the processing liquid to be processed is changed; the has a set temperature changing means for changing the set temperature, and control means for controlling said processing liquid replenishing means and said processing liquid discharge means, the control means changes the concentration of the processing solution for processing the substrate The case, the treatment liquid the processing solution of a predetermined amount is discharged from the treatment tank with discharge means, said processing liquid replenishing means the processing liquid in a concentration which is a saturation concentration in the changed the set temperature at the set temperature changing means It was decided to control to replenish the treatment tank.

また、前記設定温度変更手段は、変更する処理液の濃度を設定することで、設定された濃度が飽和濃度となる沸点に前記設定温度を設定することにした。
Further, the set temperature changing means sets the set temperature to the boiling point where the set concentration becomes the saturated concentration by setting the concentration of the treatment liquid to be changed .

また、前記処理液補充手段は、予め前記薬液を前記希釈液で希釈して、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度にした前記処理液を前記処理槽に補充することにした。   Further, the processing liquid replenishing means replenishes the processing tank with the processing liquid that has been diluted in advance with the diluting liquid to a concentration that becomes a saturated concentration at the set temperature changed by the set temperature changing means. Decided to do.

また、前記処理液補充手段は、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度になるように前記薬液と前記希釈液とをそれぞれ前記処理槽に補充することにした。   Further, the treatment liquid replenishing means replenishes the treatment tank with the chemical liquid and the diluting liquid so that the concentration becomes the saturated concentration at the set temperature changed by the set temperature changing means.

また、前記処理液補充手段は、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度になるように前記薬液を前記希釈液で希釈しながら前記処理槽に補充することにした。   Further, the processing liquid replenishing means replenishes the processing tank while diluting the chemical liquid with the diluting liquid so that the concentration becomes a saturated concentration at the set temperature changed by the set temperature changing means. .

また、前記処理液補充手段は、前記薬液又は/及び前記希釈液を予め加熱する加熱手段を有することにした。   Further, the processing liquid replenishing means has a heating means for preheating the chemical liquid and / or the diluted liquid.

また、前記制御手段は、前記薬液を前記希釈液で希釈する直前に前記加熱手段で前記希釈液を加熱することにした。   Further, the control means heats the diluted solution by the heating means immediately before diluting the chemical solution with the diluted solution.

また、前記制御手段は、前記希釈液の添加によって低下する温度を補償した温度に前記加熱手段で前記薬液を加熱することにした。   In addition, the control means heats the chemical solution by the heating means to a temperature that compensates for the temperature that decreases due to the addition of the diluent.

また、前記制御手段は、前記希釈液の沸騰により蒸発する量を補償した量の前記希釈液で前記薬液を希釈することにした。   Further, the control means dilutes the chemical solution with an amount of the diluent that compensates for the amount of evaporation due to boiling of the diluent.

また、本発明では、薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、処理槽に貯留した前記処理液に基板を浸漬させて前記基板の処理を行う基板処理方法において、前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更可能とし、前記基板を処理する処理液の濃度を変更する場合に、前記設定温度が変更され所定量の前記処理液を前記処理槽から排出し、変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理槽に補充することにした。
Further, in the present invention, the treatment liquid obtained by diluting the chemical liquid with the diluent is boiled at a set temperature to bring the concentration of the treatment liquid to the saturated concentration at the set temperature, and the substrate is immersed in the treatment liquid stored in the treatment tank. in the substrate processing method for performing processing of said substrate Te, the concentration of the treatment liquid to be changed to change the concentration of the processing solution for processing the substrate and can change the set temperature to the boiling point of the saturation concentration, said substrate When changing the concentration of the processing liquid to be processed, the set temperature is changed , a predetermined amount of the processing liquid is discharged from the processing tank, and the processing liquid having a concentration that becomes a saturated concentration at the changed set temperature is removed. The treatment tank was replenished.

また、前記処理液の補充は、予め前記薬液を前記希釈液で希釈して、変更された前記設定温度における飽和濃度となる濃度にした前記処理液を前記処理槽に補充することにした。   In addition, the replenishment of the treatment liquid is performed by replenishing the treatment tank with the treatment liquid that has been diluted in advance with the diluent and having a concentration that becomes a saturated concentration at the changed set temperature.

また、前記処理液の補充は、変更された前記設定温度における飽和濃度となる濃度になるように前記薬液と前記希釈液とをそれぞれ前記処理槽に補充することにした。   The replenishment of the treatment liquid is performed by replenishing the treatment tank with the chemical solution and the diluting solution so that the concentration becomes a saturated concentration at the changed set temperature.

また、前記処理液の補充は、変更された前記設定温度における飽和濃度となる濃度になるように前記薬液を前記希釈液で希釈しながら前記処理槽に補充することにした。   In addition, the treatment solution is replenished to the treatment tank while the chemical solution is diluted with the diluent so that the concentration becomes a saturated concentration at the changed set temperature.

また、前記薬液又は/及び前記希釈液を予め加熱することにした。   In addition, the chemical solution and / or the diluent is preheated.

また、前記薬液を前記希釈液で希釈する直前に前記希釈液を加熱することにした。   In addition, the diluent is heated immediately before the drug solution is diluted with the diluent.

また、前記希釈液の添加によって低下する温度を補償した温度に前記薬液を加熱することにした。   In addition, the chemical solution is heated to a temperature that compensates for the temperature that decreases due to the addition of the diluent.

また、前記希釈液の沸騰により蒸発する量を補償した量の前記希釈液で前記薬液を希釈することにした。   Further, the chemical solution is diluted with an amount of the diluent that compensates for the amount of evaporation due to boiling of the diluent.

また、本発明では、薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、処理槽に貯留した前記処理液に基板を浸漬させて前記基板の処理を行う基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更可能とし、前記基板を処理する処理液の濃度を変更する場合に、前記設定温度が変更され所定量の前記処理液を前記処理槽から排出し、変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理槽に補充することにした。 Further, in the present invention, the treatment liquid obtained by diluting the chemical liquid with the diluent is boiled at a set temperature to bring the concentration of the treatment liquid to the saturated concentration at the set temperature, and the substrate is immersed in the treatment liquid stored in the treatment tank. In the computer-readable storage medium storing the substrate processing program for processing the substrate, the setting is made to the boiling point at which the concentration of the processing liquid to be changed becomes the saturated concentration when the concentration of the processing liquid to process the substrate is changed. When the temperature can be changed and the concentration of the processing liquid for processing the substrate is changed , the set temperature is changed , a predetermined amount of the processing liquid is discharged from the processing tank, and saturation at the changed set temperature is performed. It was decided to replenish the treatment tank with the treatment liquid having a concentration.

本発明によれば、処理槽で基板を処理する処理液の濃度を維持することができ、基板の処理を良好に行うことができる。   ADVANTAGE OF THE INVENTION According to this invention, the density | concentration of the process liquid which processes a board | substrate with a processing tank can be maintained, and a board | substrate can be processed favorably.

基板処理装置を示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing apparatus. 基板処理プログラムを示すフローチャート。The flowchart which shows a substrate processing program. 基板処理方法を模式的に示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing method typically. 基板処理方法を模式的に示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing method typically. 基板処理方法を模式的に示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing method typically. 基板処理方法を模式的に示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing method typically. 基板処理装置を示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing apparatus. 基板処理装置を示す断面説明図。Cross-sectional explanatory drawing which shows a substrate processing apparatus.

以下に、本発明に係る基板処理装置及び基板処理方法並びに基板処理プログラムの具体的な構成について図面を参照しながら説明する。   A specific configuration of a substrate processing apparatus, a substrate processing method, and a substrate processing program according to the present invention will be described below with reference to the drawings.

図1に示すように、基板処理装置1は、処理槽2と基板搬送手段3と処理液循環手段4と処理液加熱手段5と処理液排出手段6と処理液補充手段7と設定温度変更手段8と制御手段9とを有している。ここで、処理槽2は、貯留した処理液で基板10を処理する。基板搬送手段3は、処理槽2に基板10を搬入し、処理槽2から基板10を搬出する。処理液循環手段4は、処理槽2に貯留した処理液を循環させる。処理液加熱手段5は、処理槽2に貯留した処理液を加熱する。処理液排出手段6は、処理槽2に貯留した処理液を処理槽2から外部へ排出する。処理液補充手段7は、処理槽2に新たに処理液を補充する。設定温度変更手段8は、処理槽2に貯留した処理液の温度を変更可能に設定する。制御手段9は、各手段3〜8を制御する。   As shown in FIG. 1, the substrate processing apparatus 1 includes a processing tank 2, a substrate transport means 3, a processing liquid circulation means 4, a processing liquid heating means 5, a processing liquid discharge means 6, a processing liquid replenishing means 7, and a set temperature changing means. 8 and control means 9. Here, the processing tank 2 processes the substrate 10 with the stored processing liquid. The substrate transfer means 3 carries the substrate 10 into the processing tank 2 and carries the substrate 10 out of the processing tank 2. The processing liquid circulation means 4 circulates the processing liquid stored in the processing tank 2. The processing liquid heating unit 5 heats the processing liquid stored in the processing tank 2. The processing liquid discharge means 6 discharges the processing liquid stored in the processing tank 2 from the processing tank 2 to the outside. The processing liquid replenishing means 7 replenishes the processing tank 2 with a new processing liquid. The set temperature changing means 8 sets the temperature of the processing liquid stored in the processing tank 2 to be changeable. The control means 9 controls each means 3-8.

処理槽2は、上端部を開口した貯留槽11の外周端縁部にオーバーフロー槽12を形成している。貯留槽11は、底部に処理液流入出口13を形成している。オーバーフロー槽12は、底部に処理液流出口14を形成している。処理液流入出口13と処理液流出口14との間には、処理液循環手段4が設けられている。処理液流入出口13には、処理液排出手段6が設けられている。また、オーバーフロー槽12には、処理液補充手段7が設けられている。   The treatment tank 2 forms an overflow tank 12 at the outer peripheral edge of the storage tank 11 having an open upper end. The storage tank 11 has a treatment liquid inlet / outlet 13 formed at the bottom. The overflow tank 12 has a processing liquid outlet 14 formed at the bottom. Between the treatment liquid inlet / outlet 13 and the treatment liquid outlet / outlet 14, a treatment liquid circulation means 4 is provided. A treatment liquid discharge means 6 is provided at the treatment liquid inlet / outlet 13. The overflow tank 12 is provided with a processing liquid replenishing means 7.

そして、処理槽2は、貯留槽11に処理液を貯留し、貯留槽11に基板搬送手段3で搬入された基板10を処理液で処理する。貯留槽11に貯留された処理液は、一部が貯留槽11から溢れ出て、オーバーフロー槽12へと流入し、処理液循環手段4によってオーバーフロー槽12から再び貯留槽11に流入する。   The processing tank 2 stores the processing liquid in the storage tank 11 and processes the substrate 10 carried into the storage tank 11 by the substrate transport means 3 with the processing liquid. A part of the processing liquid stored in the storage tank 11 overflows from the storage tank 11 and flows into the overflow tank 12, and then flows again from the overflow tank 12 into the storage tank 11 by the processing liquid circulation means 4.

基板搬送手段3は、昇降自在の搬送アーム15の下端部に4本の基板保持体16を水平に取付けている。基板搬送手段3は、基板保持体16の上面に形成した複数個(たとえば、50個)の溝17で複数枚の基板10を垂直状態で平行に保持する。搬送アーム15には、昇降機構18が接続されている。昇降機構18は、制御手段9に接続しており、制御手段9によって昇降制御される。   The substrate transfer means 3 has four substrate holders 16 attached horizontally to the lower end of a vertically movable transfer arm 15. The substrate transfer means 3 holds a plurality of substrates 10 in parallel in a vertical state by a plurality of (for example, 50) grooves 17 formed on the upper surface of the substrate holder 16. A lift mechanism 18 is connected to the transfer arm 15. The elevating mechanism 18 is connected to the control means 9 and is controlled to be raised and lowered by the control means 9.

この基板搬送手段3は、基板10を基板保持体16で保持した状態で、昇降機構18によって基板保持体16を降下させることで、処理槽2(貯留槽11)に基板10を搬入し、処理槽2に貯留した処理液に基板10を浸漬させて基板10の処理を行い、処理後に昇降機構18によって基板保持体16を上昇させることで、処理槽2から基板10を搬出する。   The substrate transfer means 3 carries the substrate 10 into the processing tank 2 (storage tank 11) by lowering the substrate holding body 16 by the lifting mechanism 18 in a state where the substrate 10 is held by the substrate holding body 16, and performs processing. The substrate 10 is immersed in the processing liquid stored in the tank 2 to process the substrate 10, and the substrate holder 16 is lifted by the lifting mechanism 18 after the processing, whereby the substrate 10 is unloaded from the processing tank 2.

処理液循環手段4は、オーバーフロー槽12の処理液流出口14と貯留槽11の処理液流入出口13との間に循環流路19を形成し、循環流路19にポンプ20とヒーター21とフィルター22を設けている。ポンプ20及びヒーター21は、制御手段9に接続しており、制御手段9によって駆動制御される。   The treatment liquid circulation means 4 forms a circulation channel 19 between the treatment liquid outlet 14 of the overflow tank 12 and the treatment liquid inlet / outlet 13 of the storage tank 11, and a pump 20, a heater 21 and a filter are provided in the circulation channel 19. 22 is provided. The pump 20 and the heater 21 are connected to the control means 9 and are driven and controlled by the control means 9.

この処理液循環手段4は、ポンプ20によってオーバーフロー槽12の処理液流出口14から処理液を吸引し、ヒーター21とフィルター22を通して貯留槽11の処理液流入出口13へと処理液を供給する。これにより、処理液循環手段4は、処理槽2に貯留した処理液を循環させ、薬液(たとえば、リン酸)と希釈液(たとえば、純水)とを撹拌混合させて、薬液を希釈液で希釈した処理液の濃度を均一に保持している。   The processing liquid circulating means 4 sucks the processing liquid from the processing liquid outlet 14 of the overflow tank 12 by the pump 20 and supplies the processing liquid to the processing liquid inlet / outlet 13 of the storage tank 11 through the heater 21 and the filter 22. Thereby, the processing liquid circulation means 4 circulates the processing liquid stored in the processing tank 2 and stirs and mixes the chemical liquid (for example, phosphoric acid) and the diluting liquid (for example, pure water). The concentration of the diluted processing solution is kept uniform.

処理液加熱手段5は、貯留槽11の外周部にヒーター23を設けるとともに、貯留槽11の内部に温度センサー24を設けている。ヒーター23及び温度センサー24は、制御手段9に接続しており、制御手段9によってヒーター23の駆動制御が行われるとともに、温度センサー24で検出した貯留槽11の内部の処理液の液温が制御手段9に入力される。   The treatment liquid heating means 5 is provided with a heater 23 on the outer periphery of the storage tank 11 and a temperature sensor 24 inside the storage tank 11. The heater 23 and the temperature sensor 24 are connected to the control means 9, and the drive control of the heater 23 is performed by the control means 9, and the liquid temperature of the processing liquid inside the storage tank 11 detected by the temperature sensor 24 is controlled. Input to means 9.

この処理液加熱手段5は、貯留槽11に貯留した処理液の液温を温度センサー24で測定し、設定温度変更手段8で設定した温度となるようにヒーター23で処理液を例えば110℃以上に加熱する。この処理液加熱手段5は、設定温度変更手段8で設定した温度で処理液を貯留槽11の内部で沸騰させ、処理液の濃度を設定温度(沸点)における処理液の飽和濃度としている。たとえば、設定温度が120℃の場合には、処理液を120℃で沸騰させることで、処理液の濃度を68%とし、設定温度が160℃の場合には、処理液を160℃で沸騰させることで、処理液の濃度を85%としている。   The treatment liquid heating means 5 measures the liquid temperature of the treatment liquid stored in the storage tank 11 with the temperature sensor 24, and the treatment liquid is heated to, for example, 110 ° C. or higher by the heater 23 so that the temperature set by the set temperature changing means 8 is obtained. Heat to. The processing liquid heating means 5 boils the processing liquid inside the storage tank 11 at the temperature set by the set temperature changing means 8 and sets the concentration of the processing liquid to the saturated concentration of the processing liquid at the set temperature (boiling point). For example, when the set temperature is 120 ° C., the treatment liquid is boiled at 120 ° C., so that the concentration of the treatment liquid is 68%. When the set temperature is 160 ° C., the treatment liquid is boiled at 160 ° C. Thus, the concentration of the treatment liquid is set to 85%.

処理液排出手段6は、貯留槽11の処理液流入出口13に排出流路25を介してドレン26に接続し、排出流路25の中途部に流量調整器27を接続している。なお、排出流路25は、上流端部が循環流路19の下流端部を兼用している。流量調整器27は、制御手段9に接続しており、制御手段9によって開閉制御及び流量制御される。   The processing liquid discharge means 6 is connected to the drain 26 via the discharge flow path 25 at the treatment liquid inlet / outlet 13 of the storage tank 11, and a flow rate regulator 27 is connected to the middle of the discharge flow path 25. Note that the upstream end of the discharge channel 25 also serves as the downstream end of the circulation channel 19. The flow rate regulator 27 is connected to the control means 9 and is controlled to open and close and the flow rate is controlled by the control means 9.

この処理液排出手段6は、処理槽2に貯留した処理液が劣化した場合などに、処理液循環手段4を停止させた状態で流量調整器27で調整した所定量の処理液を貯留槽11の処理液流入出口13からドレン26へと排出する。   The processing liquid discharge means 6 stores a predetermined amount of processing liquid adjusted by the flow rate regulator 27 in a state where the processing liquid circulation means 4 is stopped when the processing liquid stored in the processing tank 2 deteriorates. Then, the liquid is discharged from the treatment liquid inlet / outlet 13 to the drain 26.

処理液補充手段7は、薬液を供給する薬液供給源28と希釈液を供給する希釈液供給源29を補充槽30にそれぞれ流量調整器31,32を介して接続している。流量調整器31,32は、制御手段9に接続しており、制御手段9によって開閉制御及び流量制御される。   The treatment liquid replenishing means 7 connects a chemical liquid supply source 28 for supplying a chemical liquid and a diluent supply source 29 for supplying a diluent to a replenishing tank 30 via flow regulators 31 and 32, respectively. The flow rate adjusters 31 and 32 are connected to the control means 9, and the opening and closing control and the flow rate control are performed by the control means 9.

また、処理液補充手段7は、補充槽30に循環流路33の上流端部及び下流端部を接続し、循環流路33の中途部にポンプ34と加熱手段35(ヒーター)とを設けている。ポンプ34及び加熱手段35は、制御手段9に接続しており、制御手段9によって駆動制御される。なお、加熱手段35は、処理液、すなわち、薬液及び希釈液を加熱する。   Further, the processing liquid replenishing means 7 has an upstream end and a downstream end of the circulation flow path 33 connected to the replenishment tank 30, and a pump 34 and a heating means 35 (heater) are provided in the middle of the circulation flow path 33. Yes. The pump 34 and the heating means 35 are connected to the control means 9 and are driven and controlled by the control means 9. The heating means 35 heats the treatment liquid, that is, the chemical liquid and the dilution liquid.

さらに、処理液補充手段7は、補充槽30に供給流路36の上流端部を接続し、供給流路36の中途部に流量調整器37を設けるとともに、供給流路36の下流端部を処理槽2のオーバーフロー槽12に接続している。流量調整器37は、制御手段9に接続しており、制御手段9によって開閉制御及び流量制御される。なお、供給流路36は、上流端部が循環流路33の下流端部を兼用している。   Further, the processing liquid replenishing means 7 connects the upstream end of the supply flow path 36 to the replenishment tank 30, and a flow rate regulator 37 is provided in the middle of the supply flow path 36, and the downstream end of the supply flow path 36 is provided. It is connected to the overflow tank 12 of the processing tank 2. The flow rate regulator 37 is connected to the control means 9 and is controlled to open and close and the flow rate is controlled by the control means 9. In addition, the upstream end of the supply channel 36 also serves as the downstream end of the circulation channel 33.

この処理液補充手段7は、薬液供給源28から流量調整器31で調整した流量の薬液を補充槽30に供給するとともに、希釈液供給源29から流量調整器32で調整した流量の希釈液を補充槽30に供給する。また、ポンプ34及び加熱手段35を駆動して、補充槽30の内部の薬液及び希釈液を循環流路33を介して循環させ、薬液と希釈液とを撹拌混合させて、薬液を希釈液で希釈した処理液の濃度を均一に保持するとともに、処理液の温度を所定の温度に保持する。さらに、ポンプ34及び加熱手段35を停止させた状態で流量調整器37で調整した所定量の処理液を供給流路36から処理槽2のオーバーフロー槽12に供給する。これにより、処理液補充手段7は、流量調整器31で調整した流量の薬液を流量調整器32で調整した流量の希釈液で希釈した所定濃度の処理液を所定温度で補充槽30から処理槽2へ補充する。   The processing liquid replenishing means 7 supplies the chemical liquid having the flow rate adjusted by the flow rate adjuster 31 from the chemical liquid supply source 28 to the replenishing tank 30, and the dilution liquid having the flow rate adjusted by the flow rate adjuster 32 from the diluent supply source 29. Supply to replenishing tank 30. Further, the pump 34 and the heating means 35 are driven to circulate the chemical solution and the dilution solution inside the replenishing tank 30 through the circulation channel 33, and the chemical solution and the dilution solution are stirred and mixed, so that the chemical solution is diluted with the dilution solution. While maintaining the concentration of the diluted processing liquid to be uniform, the temperature of the processing liquid is maintained at a predetermined temperature. Further, a predetermined amount of the processing liquid adjusted by the flow rate regulator 37 is supplied from the supply channel 36 to the overflow tank 12 of the processing tank 2 while the pump 34 and the heating means 35 are stopped. As a result, the processing liquid replenishing means 7 supplies the processing liquid having a predetermined concentration obtained by diluting the chemical liquid having the flow rate adjusted by the flow rate regulator 31 with the diluent having the flow rate adjusted by the flow rate regulator 32 from the replenishing tank 30 to the processing tank Refill to 2.

設定温度変更手段8は、処理液を沸騰させる設定温度を変更するための手段であり、回転型のアナログ入力部品やスイッチ型のデジタル入力部品などを用いることができる。なお、設定温度変更手段8は、処理液を沸騰させる設定温度を直接設定できるようにした場合に限られず、処理液の濃度を設定できるようにしてもよい。処理液の濃度を設定する場合には、設定された濃度が飽和濃度となる沸点を設定温度変更手段8或いは制御手段9によって求め、その沸点を設定温度として設定する。   The set temperature changing means 8 is means for changing the set temperature at which the processing liquid is boiled, and a rotary type analog input component, a switch type digital input component, or the like can be used. The set temperature changing means 8 is not limited to the case where the set temperature for boiling the processing liquid can be directly set, but the concentration of the processing liquid may be set. When setting the concentration of the treatment liquid, the boiling point at which the set concentration becomes the saturated concentration is obtained by the set temperature changing means 8 or the control means 9, and the boiling point is set as the set temperature.

この設定温度変更手段8は、設定温度を制御手段9に通知し、設定温度に基づいて制御手段9によって各手段(処理液循環手段4や処理液加熱手段5や処理液補充手段7など)を制御させる。   The set temperature changing means 8 notifies the control means 9 of the set temperature, and the control means 9 controls each means (the processing liquid circulation means 4, the processing liquid heating means 5, the processing liquid replenishing means 7, etc.) based on the set temperature. Let me control.

制御手段9は、コンピュータからなり、コンピュータが読み取り可能な記憶媒体38に記憶した基板処理プログラムにしたがって基板処理装置1を制御して、基板10の処理を行う。なお、記憶媒体38は、基板処理プログラム等の各種プログラムを記憶できる媒体であればよく、ROMやRAMなどの半導体メモリー型の記憶媒体であってもハードディスクやCD−ROMなどのディスク型の記憶媒体であってもよい。   The control means 9 comprises a computer and controls the substrate processing apparatus 1 according to the substrate processing program stored in the computer-readable storage medium 38 to process the substrate 10. The storage medium 38 may be any medium that can store various programs such as a substrate processing program. Even if it is a semiconductor memory type storage medium such as a ROM or RAM, a disk type storage medium such as a hard disk or CD-ROM. It may be.

基板処理プログラムでは、図2に示すように、基板搬入工程、基板処理工程、基板搬出工程を繰返し実行して、基板10の処理を行う(図1参照。)。   In the substrate processing program, as shown in FIG. 2, the substrate loading process, the substrate processing process, and the substrate unloading process are repeatedly executed to process the substrate 10 (see FIG. 1).

ここで、基板搬入工程では、基板処理装置1は、制御手段9によって基板搬送手段3の昇降機構18を制御して、搬送アーム15を降下させ、基板保持体16で保持した基板10を処理槽2(貯留槽11)の内部に搬入する。   Here, in the substrate carrying-in process, the substrate processing apparatus 1 controls the elevating mechanism 18 of the substrate transfer means 3 by the control means 9 to lower the transfer arm 15 and to hold the substrate 10 held by the substrate holder 16 in the processing tank. 2 (into storage tank 11).

また、基板処理工程では、基板処理装置1は、制御手段9によって基板搬送手段3の昇降機構18を制御し、搬送アーム15の昇降を所定時間停止させ、貯留槽11に貯留した処理液に基板10を所定時間浸漬させる。これにより、基板10は、処理液で処理される。   Further, in the substrate processing step, the substrate processing apparatus 1 controls the lifting mechanism 18 of the substrate transfer means 3 by the control means 9, stops the lifting and lowering of the transfer arm 15 for a predetermined time, and adds the substrate to the processing liquid stored in the storage tank 11. Immerse 10 for a predetermined time. Thereby, the substrate 10 is processed with the processing liquid.

また、基板搬出工程では、基板処理装置1は、制御手段9によって基板搬送手段3の昇降機構18を制御して、搬送アーム15を上昇させ、基板保持体16で保持した基板10を処理槽2(貯留槽11)の外部に搬出する。   In the substrate unloading process, the substrate processing apparatus 1 controls the elevating mechanism 18 of the substrate transfer means 3 by the control means 9 to raise the transfer arm 15 and the substrate 10 held by the substrate holder 16 to the processing tank 2. (Outside storage tank 11)

基板処理プログラムでは、上記基板搬入工程、基板処理工程、基板搬出工程を繰返し行って基板10を処理すると処理液が劣化するために、処理液の一部を入れ替える。なお、処理液の入れ替えは、基板10の処理回数や処理枚数や処理時間、或いは、処理液の濃度変化や組成変化などに基づいて適宜行ってもよい。   In the substrate processing program, when the substrate 10 is processed by repeatedly performing the substrate carrying-in process, the substrate processing process, and the substrate carrying-out process, a part of the processing liquid is replaced. Note that the replacement of the processing liquid may be performed as appropriate based on the number of processing times, the number of processing sheets, the processing time of the substrate 10, or a change in the concentration or composition of the processing liquid.

基板処理プログラムでは、図2及び図3に示すように、処理液生成工程を実行する。この処理液生成工程において、基板処理装置1は、制御手段9によって設定温度変更手段8に基づいて処理液補充手段7を制御して、処理液を生成する。すなわち、基板処理装置1は、設定温度変更手段8で設定された設定温度からその設定温度における処理液の飽和濃度を求め、その濃度となる比率で流量調整器31,32を調整し、薬液供給源28から薬液を補充槽30に供給するとともに、希釈液供給源29から希釈液を補充槽30に供給する。また、基板処理装置1は、流量調整器37を閉塞させた状態で、設定温度変更手段8で設定された設定温度となるように加熱手段35を駆動させるとともに、ポンプ34を駆動させる。なお、設定温度が薬液又は希釈液の沸点よりも高い温度の場合、処理液を設定温度に加熱して沸騰させることで、設定温度よりも沸点が低い方の薬液又は希釈液の一部が蒸発し、処理液の濃度が増減する。そのため、処理液の沸騰によって蒸発する量を予め補償した量の薬液又は希釈液を供給することが望ましい。   In the substrate processing program, as shown in FIGS. 2 and 3, a processing liquid generation step is executed. In this processing liquid generating step, the substrate processing apparatus 1 controls the processing liquid replenishing means 7 based on the set temperature changing means 8 by the control means 9 to generate a processing liquid. That is, the substrate processing apparatus 1 obtains the saturated concentration of the processing liquid at the set temperature from the set temperature set by the set temperature changing means 8, adjusts the flow rate regulators 31 and 32 at the ratio to the concentration, and supplies the chemical solution The chemical solution is supplied from the source 28 to the replenishing tank 30, and the diluent is supplied from the diluent supply source 29 to the replenishing tank 30. Further, the substrate processing apparatus 1 drives the heating unit 35 and the pump 34 so as to reach the set temperature set by the set temperature changing unit 8 with the flow rate regulator 37 closed. If the set temperature is higher than the boiling point of the chemical solution or diluent, the treatment solution is heated to the set temperature and boiled to evaporate part of the chemical solution or diluent with a lower boiling point than the set temperature. As a result, the concentration of the processing solution increases or decreases. For this reason, it is desirable to supply an amount of a chemical solution or diluting solution that compensates in advance for the amount evaporated by boiling of the processing solution.

これにより、処理液生成工程では、補充槽30に供給された薬液及び希釈液を循環流路33を介して循環させ、薬液と希釈液とを撹拌混合させて、薬液を希釈液で希釈した処理液の濃度を設定温度における飽和濃度とするとともに、処理液の温度を設定温度に保持する。なお、処理液(薬液及び希釈液)を加熱手段35で設定温度に加熱しておくことで、後の処理液補充工程において処理液を処理槽2に補充したときに処理槽2の内部での温度低下を防止することができる。   Thereby, in the treatment liquid generation step, the chemical solution and dilution liquid supplied to the replenishing tank 30 are circulated through the circulation channel 33, and the chemical liquid and the dilution liquid are stirred and mixed to dilute the chemical liquid with the dilution liquid. The concentration of the liquid is set to the saturated concentration at the set temperature, and the temperature of the treatment liquid is held at the set temperature. The treatment liquid (chemical solution and dilution liquid) is heated to the set temperature by the heating means 35, so that the treatment tank 2 is refilled in the treatment tank 2 in the subsequent treatment liquid replenishment step. A temperature drop can be prevented.

次に、基板処理プログラムは、図2及び図4に示すように、処理液排出工程を実行する。この処理液排出工程において、基板処理装置1は、制御手段9によって処理液排出手段6を制御して、流量調整器27で調整した所定の流量だけ処理液を貯留槽11の処理液流入出口13からドレン26へと排出する。   Next, the substrate processing program executes a processing liquid discharge step as shown in FIGS. In this processing liquid discharging step, the substrate processing apparatus 1 controls the processing liquid discharging means 6 by the control means 9 and supplies the processing liquid to the processing liquid inlet / outlet 13 of the storage tank 11 by a predetermined flow rate adjusted by the flow rate regulator 27. To drain 26.

次に、基板処理プログラムは、図2及び図5に示すように、処理液補充工程を実行する。この処理液補充工程において、基板処理装置1は、制御手段9によって設定温度変更手段8に基づいて処理液循環手段4、処理液加熱手段5及び処理液補充手段7を制御して、処理液を処理槽2(貯留槽11)に補充する。すなわち、基板処理装置1は、処理液排出工程で排出した処理液の量と同一量となるように流量調整器37で調整した流量の処理液を補充槽30から処理槽2(オーバーフロー槽12)に補充する。また、基板処理装置1は、流量調整器27を閉塞させた状態で、設定温度変更手段8で設定された設定温度となるようにヒーター21及びヒーター23を駆動させるとともに、ポンプ20を駆動させる。   Next, as shown in FIGS. 2 and 5, the substrate processing program executes a processing liquid replenishment step. In this processing liquid replenishing step, the substrate processing apparatus 1 controls the processing liquid circulating means 4, the processing liquid heating means 5 and the processing liquid replenishing means 7 on the basis of the set temperature changing means 8 by the control means 9, so that the processing liquid is supplied. Replenish processing tank 2 (storage tank 11). That is, the substrate processing apparatus 1 supplies the processing liquid having the flow rate adjusted by the flow regulator 37 from the replenishing tank 30 to the processing tank 2 (overflow tank 12) so as to be the same amount as the processing liquid discharged in the processing liquid discharging step. To replenish. Further, the substrate processing apparatus 1 drives the heater 21 and the heater 23 and drives the pump 20 so as to reach the set temperature set by the set temperature changing means 8 with the flow rate regulator 27 closed.

これにより、処理液補充工程では、補充槽30から処理槽2に供給された処理液を循環流路19を介して循環させて処理液を混合させて、処理液の濃度を設定温度における飽和濃度とするとともに、処理液の温度を設定温度に保持する。なお、この処理液補充工程よりも前に処理液生成工程が完了していればよい。そのため、処理液生成工程は、基板搬入工程や基板処理工程や基板搬出工程や処理液排出工程と同時に行ってもよい。   Thereby, in the processing liquid replenishment step, the processing liquid supplied from the replenishing tank 30 to the processing tank 2 is circulated through the circulation channel 19 to mix the processing liquid, and the concentration of the processing liquid is set to the saturation concentration at the set temperature. At the same time, the temperature of the processing liquid is maintained at the set temperature. In addition, the process liquid production | generation process should just be completed before this process liquid replenishment process. Therefore, the process liquid generation process may be performed simultaneously with the substrate carry-in process, the substrate process, the substrate carry-out process, and the process liquid discharge process.

その後、基板処理プログラムは、図2に示すように、上記基板搬入工程、基板処理工程、基板搬出工程を実行して、基板10の処理を行う。   Thereafter, as shown in FIG. 2, the substrate processing program executes the substrate loading process, the substrate processing process, and the substrate unloading process to process the substrate 10.

なお、基板処理プログラムでは、図6に示すように、基板10の処理を行う前後(待機時)や基板10の処理を行っている間(処理時)において、制御手段9によって処理液循環手段4及び処理液加熱手段5を制御して、流量調整器27を閉塞させた状態で、設定温度変更手段8で設定された設定温度となるようにヒーター21及びヒーター23を駆動させるとともに、ポンプ20を駆動させている。これにより、処理液の濃度を設定温度における飽和濃度とするとともに、処理液の温度を設定温度に保持している。   In the substrate processing program, as shown in FIG. 6, before and after the processing of the substrate 10 (during standby) and during the processing of the substrate 10 (during processing), the control liquid 9 is processed by the control unit 9. In addition, while the flow rate regulator 27 is closed by controlling the treatment liquid heating means 5, the heater 21 and the heater 23 are driven to reach the set temperature set by the set temperature changing means 8, and the pump 20 is turned on. Driven. As a result, the concentration of the processing liquid is set to the saturated concentration at the set temperature, and the temperature of the processing liquid is held at the set temperature.

上記基板処理装置1では、設定温度変更手段8で処理液の設定温度(沸点)を変更することによって、基板10を処理する処理液の濃度(飽和濃度)を変更することができる。   In the substrate processing apparatus 1, by changing the set temperature (boiling point) of the processing liquid with the set temperature changing means 8, the concentration (saturated concentration) of the processing liquid for processing the substrate 10 can be changed.

設定温度変更手段8で処理液の設定温度が変更された場合、基板処理装置1は、上記処理液生成工程、処理液排出工程、処理液補充工程を行った後に、基板搬入工程、基板処理工程、基板搬出工程を行う。なお、設定温度が変更された場合には、処理液排出工程で全ての処理液を処理槽2から排出して、全ての処理液を入れ替えてもよい。   When the set temperature of the processing liquid is changed by the set temperature changing means 8, the substrate processing apparatus 1 performs the above-described processing liquid generation process, the processing liquid discharge process, and the processing liquid replenishment process, then the substrate carry-in process, the substrate processing process. The substrate unloading process is performed. When the set temperature is changed, all the processing liquids may be discharged from the processing tank 2 in the processing liquid discharging step, and all the processing liquids may be replaced.

上記基板処理装置1では、設定温度変更手段8によって処理液の設定温度(飽和濃度)を変更可能となっており、設定温度が変更された場合に、所定量の処理液を処理槽2から排出し、変更された設定温度における飽和濃度となる濃度の処理液を処理槽2に補充する。   In the substrate processing apparatus 1, the set temperature (saturated concentration) of the processing liquid can be changed by the set temperature changing means 8, and when the set temperature is changed, a predetermined amount of the processing liquid is discharged from the processing tank 2. Then, the treatment tank 2 is replenished with a treatment liquid having a concentration that becomes a saturated concentration at the changed set temperature.

そして、上記基板処理装置1では、予め補充槽30の内部で薬液を希釈液で希釈して、変更された設定温度における飽和濃度となる濃度にした処理液を生成しておき、その処理液を補充槽30から処理槽2に補充する。   And in the said substrate processing apparatus 1, the chemical | medical solution is previously diluted with the dilution liquid in the replenishing tank 30, and the processing liquid which made the density | concentration which becomes the saturated density | concentration in the changed preset temperature is produced | generated, The processing tank 2 is replenished from the replenishing tank 30.

処理液の補充は、予め薬液を希釈液で希釈することで生成した処理液を補充する場合に限られず、変更された設定温度における飽和濃度となる濃度になるように薬液と希釈液とをそれぞれ処理槽2に補充してもよく、或いは、変更された設定温度における飽和濃度となる濃度になるように薬液を希釈液で希釈しながら処理槽2に補充してもよい。   The replenishment of the treatment liquid is not limited to the case of replenishing the treatment liquid generated by diluting the chemical liquid with the diluent in advance, and each of the chemical liquid and the dilution liquid is adjusted so that the concentration becomes a saturated concentration at the changed set temperature. The treatment tank 2 may be replenished, or the treatment tank 2 may be replenished while the chemical solution is diluted with a diluent so as to have a concentration that becomes a saturated concentration at the changed set temperature.

たとえば、図7に示す基板処理装置1'では、処理液補充手段7'として、薬液供給源28と希釈液供給源29とを処理槽2のオーバーフロー槽12に流量調整器31,32及び加熱手段39,40を介してそれぞれ接続している。流量調整器31,32及び加熱手段39,40は、制御手段9'に接続しており、制御手段9'によって記憶媒体38'に記憶した基板処理プログラムにしたがって駆動制御される。なお、図7に示す基板処理装置1'では、図1に示した基板処理装置1と同等の機能を有する部材については同一の符号を付して説明を省略する。   For example, in the substrate processing apparatus 1 ′ shown in FIG. 7, as the processing liquid supplementing means 7 ′, the chemical liquid supply source 28 and the diluting liquid supply source 29 are added to the overflow tank 12 of the processing tank 2 and the flow rate regulators 31, 32 and the heating means. They are connected via 39 and 40, respectively. The flow rate regulators 31, 32 and the heating means 39, 40 are connected to the control means 9 ′, and are driven and controlled by the control means 9 ′ according to the substrate processing program stored in the storage medium 38 ′. In the substrate processing apparatus 1 ′ shown in FIG. 7, the members having the same functions as those of the substrate processing apparatus 1 shown in FIG.

そして、基板処理プログラムは、図2に示す処理液生成工程を実行せずに、処理液排出工程及び処理液補充工程を実行する。   Then, the substrate processing program executes the processing liquid discharge process and the processing liquid replenishment process without executing the processing liquid generation process shown in FIG.

処理液補充工程においては、制御手段9'によって設定温度変更手段8に基づいて処理液補充手段7'を制御して、薬液供給源28から流量調整器31で調整した流量の薬液を加熱手段39で所定温度に加熱してオーバーフロー槽12に直接供給するとともに、希釈液供給源29から流量調整器32で調整した流量の希釈液を加熱手段40で所定温度に加熱してオーバーフロー槽12に直接供給する。   In the processing liquid replenishing step, the control means 9 ′ controls the processing liquid replenishing means 7 ′ based on the set temperature changing means 8 to heat the chemical liquid at the flow rate adjusted by the flow rate regulator 31 from the chemical liquid supply source 28. In addition to heating directly to the overflow tank 12 by heating to a predetermined temperature, the diluent having a flow rate adjusted by the flow rate regulator 32 from the diluent supply source 29 is heated to a predetermined temperature by the heating means 40 and directly supplied to the overflow tank 12 To do.

このときに、オーバーフロー槽12に供給される処理液(薬液及び希釈液)が、設定温度変更手段8で設定(変更)された設定温度における飽和濃度となる濃度になるように、薬液の流量と希釈液の流量を流量調整器31,32で調整する。   At this time, the flow rate of the chemical solution is set so that the treatment liquid (chemical solution and dilution solution) supplied to the overflow tank 12 has a concentration that becomes a saturated concentration at the set temperature set (changed) by the set temperature changing means 8. The flow rate of the diluent is adjusted by the flow rate adjusters 31 and 32.

これにより、基板処理装置1'では、変更された設定温度における飽和濃度となる濃度になるように薬液と希釈液とをそれぞれ処理槽2(オーバーフロー槽12)に補充する。   Thereby, in the substrate processing apparatus 1 ′, the chemical tank and the diluting liquid are replenished to the processing tank 2 (the overflow tank 12), respectively, so that the concentration becomes the saturated concentration at the changed set temperature.

なお、薬液及び希釈液を加熱手段39,40で加熱することで、新たに薬液及び希釈液を処理槽2に補充したときに処理槽2の内部で処理液の温度が低下するのを抑制することができる。   In addition, by heating a chemical | medical solution and a dilution liquid with the heating means 39 and 40, when the chemical | medical solution and a dilution liquid are newly replenished to the processing tank 2, it suppresses that the temperature of a processing liquid falls inside the processing tank 2. be able to.

また、図8に示す基板処理装置1"では、処理液補充手段7"として、薬液供給源28と希釈液供給源29とを混合器41に流量調整器31,32及び加熱手段39,40を介してそれぞれ接続し、混合器41を処理槽2のオーバーフロー槽12に接続している。流量調整器31,32及び加熱手段39,40は、制御手段9"に接続しており、制御手段9"によって記憶媒体38"に記憶した基板処理プログラムにしたがって駆動制御される。なお、図8に示す基板処理装置1"では、図1又は図7に示した基板処理装置1,1'と同等の機能を有する部材については同一の符号を付して説明を省略する。   Further, in the substrate processing apparatus 1 ″ shown in FIG. 8, as the processing liquid replenishing means 7 ″, the chemical liquid supply source 28 and the diluting liquid supply source 29 are added to the mixer 41, and the flow rate adjusters 31, 32 and the heating means 39, 40 are added. The mixer 41 is connected to the overflow tank 12 of the processing tank 2. The flow rate regulators 31, 32 and the heating means 39, 40 are connected to the control means 9 "and are driven and controlled by the control means 9" according to the substrate processing program stored in the storage medium 38 ". In the substrate processing apparatus 1 ″ shown in FIG. 1, the members having the same functions as those of the substrate processing apparatus 1, 1 ′ shown in FIG. 1 or FIG.

そして、基板処理プログラムは、図2に示す処理液生成工程を実行せずに、処理液排出工程及び処理液補充工程を実行する。   Then, the substrate processing program executes the processing liquid discharge process and the processing liquid replenishment process without executing the processing liquid generation process shown in FIG.

処理液補充工程においては、制御手段9"によって設定温度変更手段8に基づいて処理液補充手段7"を制御して、薬液供給源28から流量調整器31で調整した流量の薬液を加熱手段39で所定温度に加熱して混合器41に供給するとともに、希釈液供給源29から流量調整器32で調整した流量の希釈液を加熱手段40で所定温度に加熱して混合器41に供給し、混合器41で薬液と希釈液とを混合させることで薬液を希釈液で希釈しながら混合器41からオーバーフロー槽12に供給する。   In the processing liquid replenishment step, the control means 9 "controls the processing liquid replenishing means 7" based on the set temperature changing means 8 to heat the chemical liquid at the flow rate adjusted by the flow rate regulator 31 from the chemical liquid supply source 28. And heated to a predetermined temperature and supplied to the mixer 41, and the diluent at a flow rate adjusted by the flow rate regulator 32 from the diluent supply source 29 is heated to a predetermined temperature by the heating means 40 and supplied to the mixer 41, By mixing the chemical solution and the diluent with the mixer 41, the chemical solution is supplied from the mixer 41 to the overflow tank 12 while being diluted with the diluent.

このときに、オーバーフロー槽12に供給される処理液(薬液及び希釈液)が、設定温度変更手段8で設定(変更)された設定温度における飽和濃度となる濃度になるように、薬液の流量と希釈液の流量を流量調整器31,32で調整する。   At this time, the flow rate of the chemical solution is set so that the treatment liquid (chemical solution and dilution solution) supplied to the overflow tank 12 has a concentration that becomes a saturated concentration at the set temperature set (changed) by the set temperature changing means 8. The flow rate of the diluent is adjusted by the flow rate adjusters 31 and 32.

これにより、基板処理装置1"では、変更された設定温度における飽和濃度となる濃度になるように薬液を希釈液で希釈しながら処理槽2に補充する。   As a result, the substrate processing apparatus 1 ″ replenishes the processing bath 2 while diluting the chemical solution with the diluent so that the concentration becomes the saturated concentration at the changed set temperature.

図7又は図8に示す基板処理装置1',1"では、加熱手段39,40によって薬液及び希釈液を設定温度に加熱するようにしてもよい。但し、設定温度が薬液又は希釈液の沸点よりも高い温度の場合には、設定温度よりも沸点が低い方の薬液又は希釈液を設定温度及び沸点よりも低い温度で加熱する一方、設定温度よりも沸点が高い方の薬液又は希釈液を設定温度で加熱する。この場合、設定温度よりも沸点が低い方の薬液又は希釈液は、希釈する直前に加熱することが望ましい。また、設定温度よりも沸点が高い方の薬液又は希釈液は、設定温度よりも沸点が低い方の薬液又は希釈液の添加によって温度が低下するため、その低下する温度を補償できるように、設定温度よりも高い温度で加熱することが望ましい。さらに、薬液及び希釈液を処理槽2に供給した後に設定温度に加熱して沸騰させることで、設定温度よりも沸点が低い方の薬液又は希釈液が蒸発し、生成される処理液の濃度が増減する。そのため、処理液の沸騰によって蒸発する量を予め補償した量の薬液又は希釈液を供給することが望ましい。   In the substrate processing apparatus 1 ′, 1 ″ shown in FIG. 7 or FIG. 8, the chemical solution and the dilution liquid may be heated to the set temperature by the heating means 39, 40. However, the set temperature is the boiling point of the chemical solution or the dilution liquid. If the temperature is higher than the set temperature, the chemical solution or diluent having a lower boiling point than the set temperature is heated at a temperature lower than the set temperature and the boiling point, while the chemical solution or diluent having a higher boiling point than the set temperature is heated. In this case, it is desirable to heat the chemical solution or diluent having a boiling point lower than the preset temperature immediately before dilution, and the chemical solution or diluent having a boiling point higher than the preset temperature Since the temperature is lowered by the addition of a chemical solution or a diluent having a boiling point lower than the set temperature, it is desirable to heat at a temperature higher than the set temperature so as to compensate for the lowered temperature. Diluted solution in treatment tank 2 By heating to the set temperature after boiling and boiling, the chemical solution or diluent having a boiling point lower than the set temperature evaporates, and the concentration of the generated processing solution increases or decreases. It is desirable to supply an amount of a chemical solution or a diluting solution that has been compensated in advance.

また、図7又は図8に示す基板処理装置1',1"では、薬液供給源28及び希釈液供給源29に加熱手段39,40がそれぞれ設けられているために、薬液や希釈液をそれぞれ最適な温度に加熱することができる。たとえば、薬液としてリン酸を用いるとともに希釈液として純水を用い、設定温度を120℃とした場合、純水を80℃で加熱し、リン酸を120℃よりも高い温度で加熱することで、純水の蒸発による消失量を少なくするとともに、処理液に添加した際の温度低下も少なくすることができる。   In the substrate processing apparatus 1 ′, 1 ″ shown in FIG. 7 or FIG. 8, since the chemical solution supply source 28 and the dilution solution supply source 29 are provided with heating means 39, 40, respectively, the chemical solution and the dilution solution are respectively supplied. For example, when phosphoric acid is used as a chemical solution and pure water is used as a diluting solution and the set temperature is 120 ° C., pure water is heated at 80 ° C. and phosphoric acid is heated to 120 ° C. By heating at a higher temperature, the amount of disappearance due to evaporation of pure water can be reduced, and the temperature drop when added to the treatment liquid can also be reduced.

以上に説明したように、基板処理装置1,1',1"では、設定温度変更手段8によって処理液の設定温度(飽和濃度)を変更可能となっており、設定温度が変更された場合に、所定量の処理液を処理槽2から排出し、変更された設定温度における飽和濃度となる濃度の処理液を処理槽2に補充する。   As described above, in the substrate processing apparatus 1, 1 ′, 1 ″, the set temperature changing means 8 can change the set temperature (saturated concentration) of the processing liquid, and the set temperature is changed. Then, a predetermined amount of the processing liquid is discharged from the processing tank 2, and the processing tank 2 is replenished with a processing liquid having a concentration that becomes a saturated concentration at the changed set temperature.

そのため、上記基板処理装置1,1',1"では、処理液の排出及び補充を繰返し行っても、処理液の補充による処理液の濃度増加が抑制され、処理槽2で基板10を処理する処理液の濃度を所望の濃度近傍に維持することができ、基板10の処理を良好に行うことができる。   Therefore, in the substrate processing apparatus 1, 1 ', 1 ", even if the processing liquid is repeatedly discharged and replenished, an increase in the concentration of the processing liquid due to the replenishment of the processing liquid is suppressed, and the substrate 10 is processed in the processing tank 2. The concentration of the processing liquid can be maintained near the desired concentration, and the substrate 10 can be processed satisfactorily.

1 基板処理装置
2 処理槽
5 処理液加熱手段
6 処理液排出手段
7 処理液補充手段
8 設定温度変更手段
9 制御手段
10 基板
DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 2 Processing tank 5 Process liquid heating means 6 Process liquid discharge means 7 Process liquid replenishment means 8 Set temperature change means 9 Control means
10 Board

Claims (18)

薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、前記処理液に基板を浸漬させて前記基板の処理を行う基板処理装置において、
前記基板を前記処理液で処理する処理槽と、
前記処理槽に貯留した前記処理液を前記設定温度に加熱する処理液加熱手段と、
前記処理槽から前記処理液を排出する処理液排出手段と、
前記処理槽に前記処理液を補充する処理液補充手段と、
前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更する設定温度変更手段と、
前記処理液排出手段と前記処理液補充手段を制御する制御手段と、
を有し、
制御手段は、
前記基板を処理する処理液の濃度を変更する場合に、前記処理液排出手段で所定量の前記処理液を前記処理槽から排出し、設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理液補充手段から前記処理槽に補充するよう制御することを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate by immersing a substrate in the processing solution by setting the concentration of the processing solution to a saturated concentration at the set temperature by boiling a processing solution obtained by diluting a chemical solution with a diluent at a set temperature. ,
A treatment tank for treating the substrate with the treatment liquid;
Treatment liquid heating means for heating the treatment liquid stored in the treatment tank to the set temperature;
Treatment liquid discharge means for discharging the treatment liquid from the treatment tank;
Treatment liquid replenishing means for replenishing the treatment liquid to the treatment tank;
A set temperature changing means for changing the set temperature to a boiling point at which the concentration of the treatment liquid to be changed when the concentration of the treatment liquid for processing the substrate is changed to a saturated concentration ;
Control means for controlling the treatment liquid discharge means and the treatment liquid replenishment means;
Have
The control means
When changing the concentration of the processing liquid for processing the substrate, the processing liquid discharging means discharges a predetermined amount of the processing liquid from the processing tank, and the saturation concentration at the set temperature changed by the set temperature changing means The substrate processing apparatus is controlled to replenish the processing tank with a concentration of a certain amount from the processing liquid replenishing means to the processing tank.
前記設定温度変更手段は、変更する処理液の濃度を設定することで、設定された濃度が飽和濃度となる沸点に前記設定温度を設定することを特徴とする請求項1に記載の基板処理装置。 2. The substrate processing apparatus according to claim 1, wherein the set temperature changing means sets the set temperature to a boiling point where the set concentration becomes a saturated concentration by setting the concentration of the processing solution to be changed. . 前記処理液補充手段は、予め前記薬液を前記希釈液で希釈して、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度にした前記処理液を前記処理槽に補充することを特徴とする請求項1又は請求項2に記載の基板処理装置。   The treatment liquid replenishing means replenishes the treatment tank with the treatment liquid that has been diluted in advance with the diluent and has a concentration that becomes a saturated concentration at the set temperature changed by the set temperature changing means. The substrate processing apparatus according to claim 1, wherein: 前記処理液補充手段は、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度になるように前記薬液と前記希釈液とをそれぞれ前記処理槽に補充することを特徴とする請求項1又は請求項2に記載の基板処理装置。   The treatment liquid replenishing means replenishes the treatment tank with the chemical liquid and the diluting liquid so that the concentration becomes a saturated concentration at the set temperature changed by the set temperature changing means. The substrate processing apparatus according to claim 1 or 2. 前記処理液補充手段は、前記設定温度変更手段で変更された前記設定温度における飽和濃度となる濃度になるように前記薬液を前記希釈液で希釈しながら前記処理槽に補充することを特徴とする請求項1又は請求項2に記載の基板処理装置。   The processing liquid replenishing means replenishes the processing tank while diluting the chemical liquid with the diluting liquid so that the concentration becomes a saturated concentration at the set temperature changed by the set temperature changing means. The substrate processing apparatus of Claim 1 or Claim 2. 前記処理液補充手段は、前記薬液又は/及び前記希釈液を予め加熱する加熱手段を有することを特徴とする請求項1〜請求項5のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the processing liquid replenishing unit includes a heating unit that preheats the chemical solution and / or the diluent. 前記制御手段は、前記薬液を前記希釈液で希釈する直前に前記加熱手段で前記希釈液を加熱することを特徴とする請求項6に記載の基板処理装置。   The substrate processing apparatus according to claim 6, wherein the control unit heats the diluted solution by the heating unit immediately before diluting the chemical solution with the diluted solution. 前記制御手段は、前記希釈液の添加によって低下する温度を補償した温度に前記加熱手段で前記薬液を加熱することを特徴とする請求項6又は請求項7に記載の基板処理装置。   The substrate processing apparatus according to claim 6, wherein the control unit heats the chemical solution by the heating unit to a temperature that compensates for a temperature that decreases due to the addition of the diluent. 前記制御手段は、前記希釈液の沸騰により蒸発する量を補償した量の前記希釈液で前記薬液を希釈することを特徴とする請求項1〜請求項8のいずれかに記載の基板処理装置。   The substrate processing apparatus according to claim 1, wherein the control unit dilutes the chemical solution with an amount of the diluent that compensates for an amount evaporated by boiling of the diluent. 薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、処理槽に貯留した前記処理液に基板を浸漬させて前記基板の処理を行う基板処理方法において、
前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更可能とし、前記基板を処理する処理液の濃度を変更する場合に、前記設定温度が変更され所定量の前記処理液を前記処理槽から排出し、変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理槽に補充することを特徴とする基板処理方法。
The processing solution obtained by diluting the chemical solution with the diluting solution is boiled at a set temperature to set the concentration of the processing solution to the saturated concentration at the set temperature, and the substrate is immersed in the processing solution stored in a processing tank to process the substrate. In the substrate processing method to be performed,
When changing the concentration of the processing liquid for processing the substrate, the set temperature can be changed to a boiling point at which the concentration of the processing liquid to be changed becomes a saturated concentration, and when changing the concentration of the processing liquid for processing the substrate, The substrate is characterized in that the set temperature is changed , a predetermined amount of the processing liquid is discharged from the processing tank, and the processing tank is replenished with the processing liquid having a saturation concentration at the changed set temperature. Processing method.
前記処理液の補充は、予め前記薬液を前記希釈液で希釈して、変更された前記設定温度における飽和濃度となる濃度にした前記処理液を前記処理槽に補充することを特徴とする請求項10に記載の基板処理方法。   The replenishment of the treatment liquid is characterized in that the treatment liquid is preliminarily diluted with the diluent and the treatment tank is replenished with the treatment liquid having a concentration that becomes a saturated concentration at the changed set temperature. 10. The substrate processing method according to 10. 前記処理液の補充は、変更された前記設定温度における飽和濃度となる濃度になるように前記薬液と前記希釈液とをそれぞれ前記処理槽に補充することを特徴とする請求項10に記載の基板処理方法。   11. The substrate according to claim 10, wherein the replenishment of the processing liquid is performed by replenishing the processing tank with the chemical liquid and the diluting liquid so that the concentration becomes a saturated concentration at the changed set temperature. Processing method. 前記処理液の補充は、変更された前記設定温度における飽和濃度となる濃度になるように前記薬液を前記希釈液で希釈しながら前記処理槽に補充することを特徴とする請求項10に記載の基板処理方法。   The replenishment of the treatment liquid is performed by replenishing the treatment tank while diluting the chemical liquid with the diluent so that the concentration becomes a saturated concentration at the changed set temperature. Substrate processing method. 前記薬液又は/及び前記希釈液を予め加熱することを特徴とする請求項10〜請求項13のいずれかに記載の基板処理方法。   The substrate processing method according to claim 10, wherein the chemical solution or / and the dilution solution are heated in advance. 前記薬液を前記希釈液で希釈する直前に前記希釈液を加熱することを特徴とする請求項14に記載の基板処理方法。   The substrate processing method according to claim 14, wherein the diluent is heated immediately before the chemical is diluted with the diluent. 前記希釈液の添加によって低下する温度を補償した温度に前記薬液を加熱することを特徴とする請求項14又は請求項15に記載の基板処理方法。   The substrate processing method according to claim 14, wherein the chemical solution is heated to a temperature that compensates for a temperature that decreases due to the addition of the diluent. 前記希釈液の沸騰により蒸発する量を補償した量の前記希釈液で前記薬液を希釈することを特徴とする請求項10〜請求項16のいずれかに記載の基板処理方法。   17. The substrate processing method according to claim 10, wherein the chemical solution is diluted with an amount of the diluted solution that compensates for an amount of evaporation due to boiling of the diluted solution. 薬液を希釈液で希釈した処理液を設定温度で沸騰させることによって前記処理液の濃度を前記設定温度における飽和濃度とし、処理槽に貯留した前記処理液に基板を浸漬させて前記基板の処理を行う基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、
前記基板を処理する処理液の濃度を変更する場合に変更する処理液の濃度が飽和濃度となる沸点に前記設定温度を変更可能とし、前記基板を処理する処理液の濃度を変更する場合に、前記設定温度が変更され所定量の前記処理液を前記処理槽から排出し、変更された前記設定温度における飽和濃度となる濃度の前記処理液を前記処理槽に補充することを特徴とする基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体。
The processing solution obtained by diluting the chemical solution with the diluting solution is boiled at a set temperature to set the concentration of the processing solution to the saturated concentration at the set temperature, and the substrate is immersed in the processing solution stored in a processing tank to process the substrate. In a computer-readable storage medium storing a substrate processing program to be performed,
When changing the concentration of the processing liquid for processing the substrate, the set temperature can be changed to a boiling point at which the concentration of the processing liquid to be changed becomes a saturated concentration, and when changing the concentration of the processing liquid for processing the substrate, The substrate is characterized in that the set temperature is changed , a predetermined amount of the processing liquid is discharged from the processing tank, and the processing tank is replenished with the processing liquid having a saturation concentration at the changed set temperature. A computer-readable storage medium storing a processing program.
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