WO2023216852A1 - 一种通过点击化学反应调控二维材料掺杂特性的方法及应用 - Google Patents

一种通过点击化学反应调控二维材料掺杂特性的方法及应用 Download PDF

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WO2023216852A1
WO2023216852A1 PCT/CN2023/089981 CN2023089981W WO2023216852A1 WO 2023216852 A1 WO2023216852 A1 WO 2023216852A1 CN 2023089981 W CN2023089981 W CN 2023089981W WO 2023216852 A1 WO2023216852 A1 WO 2023216852A1
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transition metal
dimensional
maleimide
field effect
effect transistor
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赵昱达
缪佳磊
徐伟
卞正
张天娇
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Zhejiang University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/472—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only inorganic materials

Definitions

  • the invention belongs to the technical field of new semiconductor devices and relates to a method and application for regulating the doping characteristics of two-dimensional materials through click chemical reactions.
  • two-dimensional materials In order to cope with the challenges encountered by silicon-based integrated circuits, the use of new semiconductor materials, such as two-dimensional materials, has been proposed to weaken the impact of the short channel effect and continue to promote the miniaturization of device sizes.
  • two-dimensional materials There are a wide variety of two-dimensional materials, and their structures are all in which atoms within the layer are combined by covalent bonds to form a stable single-layer material, while the atoms between the layers are combined by van der Waals forces to form a multi-layer stack.
  • the surface of two-dimensional materials has no dangling bonds and has atomic-level flatness, which is conducive to field-effect transistors using two-dimensional materials as channels to exhibit excellent electrical transport properties and reduce the impact of short channel effects on device performance.
  • Two-dimensional transition metal sulfides are currently relatively mature semiconductor two-dimensional materials, but there are still many challenges in regulating their doping properties:
  • Two-dimensional transition metal sulfides have nanometer and sub-nanometer thickness, making it difficult to achieve heavy doping through ion implantation like silicon;
  • the purpose of the present invention is to provide a method for regulating the doping characteristics of two-dimensional transition metal sulfides through click chemical reactions in view of the shortcomings of the existing two-dimensional transition metal sulfide doping technology.
  • the source and drain regions of the field effect transistor are heavily doped to reduce the contact resistance of the field effect transistor.
  • a method for regulating the doping characteristics of two-dimensional materials through click chemical reactions is provided.
  • the two-dimensional materials are selected from two-dimensional transition metal sulfides.
  • the method uses maleimide through click chemistry.
  • the reaction is adsorbed to the surface of the two-dimensional transition metal sulfide to form a chemical bond. Due to the charge transfer in the chemical bonding process, the charge is redistributed and the doping characteristics of the two-dimensional material are controlled.
  • the maleimide includes N-benzylmaleimide, N-methylmaleimide, N-phenylmaleimide, N-(4-bromophenyl) Maleimide, N-(4-aminophenyl)maleimide.
  • the soft nucleophilic property of sulfur is used to achieve click chemical reactions through the Michael addition reaction of carbon-sulfur bonding.
  • the click chemical reactions need to be carried out in a nitrogen environment.
  • a field effect transistor is provided.
  • the channel of the field effect transistor is a two-dimensional transition metal sulfide.
  • the positions of the source region and the drain region are defined through a mask layer.
  • Channel doping is performed respectively by the method described in the first aspect.
  • the mask layer is photoresist or hexagonal boron nitride.
  • the gate dielectric layer of the field effect transistor may be silicon oxide, silicon nitride, or a high dielectric coefficient material, including aluminum oxide, hafnium oxide, zirconium oxide, etc.
  • a method for manufacturing a field effect transistor as described in the second aspect includes:
  • the two-dimensional transition metal sulfide is doped in the source and drain regions through the click chemical reaction of maleimide and the two-dimensional transition metal sulfide;
  • the source and drain electrodes are prepared through photolithography, development, coating, and lift-off processes, or are prepared using a polymer-assisted transfer method.
  • the present invention adsorbs maleimide molecules on the surface of two-dimensional transition metal sulfide through a mild click chemical reaction. Transition metal sulfides form covalent bonds.
  • This method shows high stability doping, including thermal stability and chemical stability. It is compatible with traditional micro-nano processing technology and is suitable for large-scale manufacturing technology; using two-dimensional transition metal sulfides Based on field effect transistors, this method is used to heavily dope the two-dimensional transition metal sulfide in the source and drain regions of the transistor, which can effectively reduce the contact resistance and Schottky barrier; this method can weaken the impact of the metal deposition process on the source region. and the destruction of the two-dimensional transition metal sulfide lattice in the drain region, thereby reducing the interface states introduced by the metal and reducing the adverse effects caused by the Fermi pinning effect.
  • Figure 1 is a flow chart for the preparation of two-dimensional transition metal sulfide field effect transistors
  • Figure 2 shows the photoluminescence spectrum of the two-dimensional transition metal sulfide MoS 2 before and after doping
  • Figure 3 is a schematic structural diagram of a two-dimensional transition metal sulfide field effect transistor
  • Figure 4 shows the transfer characteristic curves of the source and drain regions of the two-dimensional transition metal sulfide MoS 2 field effect transistor before and after doping.
  • the present invention provides a method for regulating the doping characteristics of two-dimensional transition metal sulfides through click chemical reactions. This method adsorbs maleimide to the surface of two-dimensional transition metal sulfides through click chemical reactions to form chemical bonds. Due to the chemical bonding The charge transfer in the process leads to charge redistribution, realizing the regulation of the doping characteristics of two-dimensional materials.
  • the maleimide includes N-benzylmaleimide, N-methylmaleimide, N-phenylmaleimide, N-(4-bromophenyl) Maleimide, N-(4-aminophenyl)maleimide.
  • the soft nucleophilic property of sulfur is used to achieve click chemical reactions through the Michael addition reaction of carbon-sulfur bonding.
  • the click chemical reactions need to be carried out in a nitrogen environment.
  • the present invention also provides a field effect transistor.
  • the channel of the field effect transistor is a two-dimensional transition metal sulfide.
  • the positions of the source region and the drain region are defined through the mask layer.
  • the source region and the drain region are respectively formed by maleyl.
  • the click chemical reaction of imine and two-dimensional transition metal sulfide realizes channel doping.
  • the mask layer is photoresist or hexagonal boron nitride.
  • the gate dielectric layer of the field effect transistor is a silicon oxide wafer.
  • the silicon oxide wafer can be replaced by a silicon nitride wafer.
  • the thermal conductivity of silicon nitride is higher than that of silicon oxide, which can effectively reduce the degradation of transistor performance caused by heat.
  • Silicon oxide The wafer can also be replaced by a silicon wafer with a high dielectric coefficient insulating layer on the surface.
  • the high dielectric coefficient insulating layer includes aluminum oxide, hafnium oxide, zirconium oxide, etc., which can effectively reduce the adverse effects of charged impurities on the electrical transport of the channel material. Influence.
  • two-dimensional transition metal sulfides can be prepared by chemical vapor deposition, making this method suitable for large-scale production.
  • the invention also provides a method for preparing a two-dimensional transition metal sulfide field effect transistor. As shown in Figure 1, the method includes:
  • the two-dimensional transition metal sulfide is doped in the source and drain regions through the click chemical reaction of maleimide and the two-dimensional transition metal sulfide;
  • the source and drain electrodes can be prepared through photolithography, development, coating, lift-off processes, or using polymer-assisted transfer methods.
  • the method for controlling the doping characteristics of two-dimensional transition metal sulfide based on the above-mentioned click chemical reaction includes the following steps:
  • a silicon oxide wafer with a few layers of two-dimensional transition metal sulfide was put into a solution composed of 20 ml of acetonitrile, 5 drops of triethylamine, and 100 mg of maleimide, and reacted in a nitrogen environment for 16 hours. Soak the silicon oxide wafer in acetonitrile to clean the maleimide physically adsorbed on the surface of the two-dimensional transition metal sulfide.
  • maleimides include N-benzylmaleimide, N-methylmaleimide, N-phenylmaleimide, N-(4-bromophenyl)maleimide Amine, N-(4-aminophenyl)maleimide.
  • the photoluminescence spectra of the two-dimensional transition metal sulfide MoS 2 changed before and after modification, as shown in Figure 2, which proves that this method can control the doping characteristics of the two-dimensional transition metal sulfide.
  • the structure of the two-dimensional transition metal sulfide field effect transistor based on the above is shown in Figure 3.
  • the substrate is a silicon oxide wafer, the thickness of the surface silicon oxide layer is 285nm, and the resistivity of single crystal silicon is 0.001-0.005 ⁇ cm of p-type heavily doped silicon.
  • Above the silicon oxide are two-dimensional transition metal sulfides. Two-dimensional transition metal sulfide is divided into channel region, source region and drain region. Above the two-dimensional transition metal sulfide channel region is hexagonal boron nitride.
  • the two-dimensional transition metal sulfide source region and drain region use the method described in Example 1 to perform click chemical reactions, that is, on the two-dimensional transition metal sulfide surface and the Leimides form covalent bonds.
  • Above the two-dimensional transition metal sulfide source and drain regions are metal electrodes.
  • transition metal sulfides transfer thin-layer two-dimensional transition metal sulfides to a silicon oxide wafer with metal markers through mechanical peeling method, and use a microscope to find the target few-layer two-dimensional transition metal sulfide on the silicon oxide wafer.
  • Dimensional transition metal sulfides include MoS 2 , WS 2 , PtS 2 , etc.
  • Example 1 Use the method described in Example 1 to perform a click chemical reaction on the two-dimensional transition metal sulfides in the source and drain regions (areas not covered by hexagonal boron nitride) to achieve control of doping characteristics.
  • the annealing gas atmosphere is a hydrogen-argon mixture (hydrogen content is 10%), and the annealing temperature is 200°C.
  • a comparative test was conducted between the original device and the device with doped source and drain regions. The electrical performance is shown in Figure 4. It can be seen from the transfer curve that the threshold voltage of the device with doped source and drain regions decreases and the open-state current increases, proving that the contact resistance is reduced.

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Abstract

本发明公开了一种通过点击化学反应调控二维材料掺杂特性的方法及应用，该方法将马来酰亚胺通过点击化学反应吸附到二维过渡金属硫化物表面形成化学键，由于化学成键过程的电荷转移导致电荷重新分布，实现二维过渡金属硫化物掺杂特性的调控。利用该方法对二维材料场效应晶体管的源区和漏区进行电荷掺杂，解决二维材料场效应晶体管接触电阻高和费米钉扎的问题。二维材料在掺杂后具有较高的热稳定性和化学稳定性，可以兼容目前的硅基加工工艺，可应用于大规模集成电路加工。

Description

一种通过点击化学反应调控二维材料掺杂特性的方法及应用 技术领域
本发明属于新型半导体器件技术领域，涉及一种通过点击化学反应调控二维材料掺杂特性的方法及应用。
背景技术
场效应晶体管作为现代集成电路的核心电子元器件，其性能的不断提升推动着近半个世纪以来的集成电路产业的高速发展。然而，随着器件尺寸微缩至其理论极限，短沟道效应使得传统硅基场效应晶体管的器件性能急剧退化。传统的依靠减小器件尺寸、增加器件集成密度以提高集成电路性能的技术路线将面临失效。
为了应对硅基集成电路遇到的挑战，已经提出了采用新型半导体材料，如二维材料等，以减弱短沟道效应的影响，继续推进器件尺寸的小型化。二维材料种类丰富，其结构均为层内原子通过共价键结合成稳定的单层材料，而原子层间则通过范德华力相结合形成多层堆叠。二维材料表面无悬挂键，具有原子级平整度，有利于以二维材料为沟道的场效应晶体管表现出优异的电学输运性能，减弱短沟道效应对器件性能的影响。
二维过渡金属硫化物是目前研究较为成熟的半导体性二维材料，但其掺杂特性的调控还存在诸多挑战：
(1)二维过渡金属硫化物具有纳米、亚纳米级厚度，难以像硅一样通过离子注入实现重掺杂；
(2)目前的掺杂方式以物理吸附小分子为主，通过化学反应形成化学键实现掺杂特性调控的方法较少；但是，物理吸附存在掺杂不稳定、不可靠、不兼容微纳加工工艺等问题；
(3)在利用二维过渡金属硫化物制备场效应晶体管时，使用传统CMOS工艺沉积金属电极存在破坏二维材料晶格的情况，在二维过渡金属硫化物中引入界面态，形成费米钉扎效应，导致场效应晶体管的接触电阻较大；目前的掺杂特性调控方法对于解决这一问题效果有限。
发明内容
本发明的目的在于针对现有二维过渡金属硫化物掺杂技术的不足，提供一种通过点击化学反应调控二维过渡金属硫化物掺杂特性的方法，利用该方法对二维过渡金属硫化物场效应晶体管的源区和漏区进行重掺杂，降低场效应晶体管的接触电阻。
本发明的目的可通过下列技术方案来实现：
根据本说明书的第一方面，提供一种通过点击化学反应调控二维材料掺杂特性的方法，所述二维材料选自二维过渡金属硫化物，该方法将马来酰亚胺通过点击化学反应吸附到二维过渡金属硫化物表面形成化学键，由于化学成键过程的电荷转移导致电荷重新分布，实现二维材料掺杂特性的调控。
进一步地，所述马来酰亚胺包括N-苄基马来酰亚胺、N-甲基马来酰亚胺、N-苯基马来酰亚胺、N-(4-溴苯基)马来酰亚胺、N-(4-氨苯基)马来酰亚胺。
进一步地，利用硫的软亲核特性通过碳-硫成键的麦克尔加成反应，实现点击化学反应，同时所述点击化学反应需要在氮气环境中进行。
根据本说明书的第二方面，提供一种场效应晶体管，所述场效应晶体管的沟道为二维过渡金属硫化物，通过掩膜层定义源区和漏区的位置，在源区和漏区分别通过如第一方面所述的方法进行沟道掺杂。
进一步地，所述掩膜层为光刻胶或六方氮化硼。
进一步地，所述场效应晶体管的栅介质层可以是氧化硅、氮化硅、或高介电系数的材料，包括氧化铝、氧化铪、氧化锆等。
根据本说明书的第三方面，提供一种如第二方面所述的场效应晶体管的制备方法，该方法包括：
(1)制备带有栅介质层的重掺杂硅衬底；
(2)转移二维过渡金属硫化物到硅衬底表面；
(3)通过掩膜层定义沟道区、源区和漏区的位置；
(4)在源区和漏区通过马来酰亚胺与二维过渡金属硫化物的点击化学反应实现二维过渡金属硫化物的掺杂；
(5)制备源区和漏区电极。
进一步地，所述源区和漏区电极通过光刻、显影、镀膜、剥离工艺制备，或者使用聚合物辅助转移方法制备。
本发明的有益效果：与现有的物理吸附小分子掺杂技术相比，本发明将马来酰亚胺分子通过温和的点击化学反应吸附在二维过渡金属硫化物表面，由于分子与二维过渡金属硫化物形成共价键，该方法表现出高稳定性掺杂，包括热稳定性和化学稳定性，可兼容传统微纳加工工艺，适用于大规模制造技术；以二维过渡金属硫化物场效应晶体管为基础，利用该方法对晶体管源区和漏区的二维过渡金属硫化物进行重掺杂，可以有效降低接触电阻和肖特基势垒；该方法可减弱金属沉积过程对源区和漏区二维过渡金属硫化物晶格的破坏，从而减少了金属引入的界面态，降低了费米钉扎效应带来的不利影响。
附图说明
图1为二维过渡金属硫化物场效应晶体管制备流程图；
图2为二维过渡金属硫化物MoS2掺杂前后光致发光光谱图；
图3为二维过渡金属硫化物场效应晶体管结构示意图；
图4为二维过渡金属硫化物MoS2场效应晶体管源区和漏区掺杂前后的转移特性曲线。
具体实施方式
以下是本发明的具体实施例，进一步阐述本发明。应理解，这些实施例仅用于说明本发明而不用于限制本发明的范围。此外应理解，在阅读了本发明讲 授的内容之后，本领域技术人员可以对本发明作各种改动或修改，这些等价形式落于本申请所附权利要求书所限定的范围。
本发明提供一种通过点击化学反应调控二维过渡金属硫化物掺杂特性的方法，该方法将马来酰亚胺通过点击化学反应吸附到二维过渡金属硫化物表面形成化学键，由于化学成键过程的电荷转移导致电荷重新分布，实现二维材料掺杂特性的调控。
进一步地，所述马来酰亚胺包括N-苄基马来酰亚胺、N-甲基马来酰亚胺、N-苯基马来酰亚胺、N-(4-溴苯基)马来酰亚胺、N-(4-氨苯基)马来酰亚胺。
进一步地，利用硫的软亲核特性通过碳-硫成键的麦克尔加成反应，实现点击化学反应，同时所述点击化学反应需要在氮气环境中进行。
本发明还提供一种场效应晶体管，所述场效应晶体管的沟道为二维过渡金属硫化物，通过掩膜层定义源区和漏区的位置，在源区和漏区分别通过马来酰亚胺与二维过渡金属硫化物的点击化学反应实现沟道掺杂。
进一步地，选择平整、没有褶皱的薄层二维过渡金属硫化物纳米薄片作为沟道材料。
进一步地，所述掩膜层为光刻胶或六方氮化硼。
进一步地，所述场效应晶体管的栅介质层为氧化硅片，氧化硅片可用氮化硅片代替，氮化硅导热率高于氧化硅，可以有效降低热量带来的晶体管性能退化，氧化硅片还可以用表面长有高介电系数绝缘层的硅片代替，高介电系数绝缘层包括氧化铝、氧化铪、氧化锆等，它们可以有效减弱带电杂质对沟道材料电学输运的不利影响。
进一步地，二维过渡金属硫化物可以选择化学气相沉积方法制备，从而使得该方法适用于大规模生产。
本发明还提供一种二维过渡金属硫化物场效应晶体管的制备方法，如图1所示，该方法包括：
(1)制备带有栅介质层的重掺杂硅衬底；
(2)转移二维过渡金属硫化物到硅衬底表面；
(3)通过掩膜层定义沟道区、源区和漏区的位置；
(4)在源区和漏区通过马来酰亚胺与二维过渡金属硫化物的点击化学反应实现二维过渡金属硫化物的掺杂；
(5)制备源区和漏区电极。源区和漏区电极可以通过光刻、显影、镀膜、剥离工艺制备，或者使用聚合物辅助转移方法制备。
实施例1
本实施例中基于上述的通过点击化学反应实现对二维过渡金属硫化物掺杂特性调控的方法包括以下步骤：
将带有少层二维过渡金属硫化物的氧化硅片放入由乙腈20ml、三乙胺5滴、马来酰亚胺100mg所配置的溶液中，在氮气环境中反应16小时。将氧化硅片泡入乙腈中，清洗物理吸附在二维过渡金属硫化物表面的马来酰亚胺。其中马来酰亚胺包括N-苄基马来酰亚胺、N-甲基马来酰亚胺、N-苯基马来酰亚胺、N-(4-溴苯基)马来酰亚胺、N-(4-氨苯基)马来酰亚胺。修饰前后二维过渡金属硫化物MoS2的光致发光光谱图发生了变化，如图2所示，证明了此方法可以实现对二维过渡金属硫化物掺杂特性的调控。
实施例2
本实施例中基于上述的二维过渡金属硫化物场效应晶体管的结构如图3所示，衬底为氧化硅片，表面氧化硅层厚度为285nm，单晶硅为电阻率0.001-0.005Ω·cm的p型重掺杂硅。氧化硅上方是二维过渡金属硫化物。二维过渡金属硫化物分为沟道区、源区和漏区。二维过渡金属硫化物沟道区上方是六方氮化硼，二维过渡金属硫化物源区和漏区使用实施例1所述方法进行点击化学反应，即在二维过渡金属硫化物表面与马来酰亚胺形成共价键。二维过渡金属硫化物源区和漏区上方是金属电极。
实施例3
本实施例中具体器件制备过程包括以下步骤：
(1)在氧化硅片上通过光刻、溅射等工艺制备金属标记，用于后续套刻工艺的对准。
(2)少层二维过渡金属硫化物制备：通过机械剥离方法将薄层二维过渡金属硫化物转移至带有金属标记的氧化硅片上，利用显微镜在氧化硅片上找到目标少层二维过渡金属硫化物。其中过渡金属硫化物包括MoS2、WS2、PtS2等。
(3)切下小块PMDS粘在玻璃载玻片上，使用PDMS粘取六方氮化硼(BN)晶体，在显微镜下寻找合适大小的六方氮化硼纳米片，使用转移平台在二维过渡金属硫化物沟道区域上方转移六方氮化硼，使得源区和漏区裸露。
(4)使用实施例1所述方法对源区和漏区的二维过渡金属硫化物(未被六方氮化硼覆盖的区域)进行点击化学反应，实现掺杂特性调控。
(5)在带有过渡金属硫化物的氧化硅片上旋涂光刻胶，通过激光直写设备进行紫外曝光，在显影液中显影完全图案化工艺；之后利用金属镀膜仪制作金电极，通过金属剥离工艺，完成场效应晶体管源区和漏区的金属电极制备。
(6)对二维过渡金属硫化物效应晶体管进行退火，退火气体氛围为氢氩混合气(氢气含量为10％)，退火温度200℃。对原始器件和源区漏区掺杂的器件进行对比测试，电学性能如图4所示。从转移曲线可以看出，源区和漏区掺杂的器件阈值电压降低，开态电流增大，证明接触电阻降低。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。

Claims (8)

  1. 一种通过点击化学反应调控二维材料掺杂特性的方法，其特征在于，所述二维材料选自二维过渡金属硫化物，该方法将马来酰亚胺通过点击化学反应吸附到二维过渡金属硫化物表面形成化学键，由于化学成键过程的电荷转移导致电荷重新分布，实现二维材料掺杂特性的调控。
  2. 根据权利要求1所述的方法，其特征在于，所述马来酰亚胺包括N-苄基马来酰亚胺、N-甲基马来酰亚胺、N-苯基马来酰亚胺、N-(4-溴苯基)马来酰亚胺、N-(4-氨苯基)马来酰亚胺。
  3. 根据权利要求1所述的方法，其特征在于，利用硫的软亲核特性通过碳-硫成键的麦克尔加成反应，实现点击化学反应，同时所述点击化学反应需要在氮气环境中进行。
  4. 一种场效应晶体管，其特征在于，所述场效应晶体管的沟道为二维过渡金属硫化物，通过掩膜层定义源区和漏区的位置，在源区和漏区分别通过权利要求1-3中任一项所述方法进行沟道掺杂。
  5. 根据权利要求4所述的场效应晶体管，其特征在于，所述掩膜层为光刻胶或六方氮化硼。
  6. 根据权利要求4所述的场效应晶体管，其特征在于，所述场效应晶体管的栅介质层为氧化硅、氮化硅、或高介电系数的材料，包括氧化铝、氧化铪、氧化锆。
  7. 一种权利要求4-6中任一项所述场效应晶体管的制备方法，其特征在于，该方法包括：
    (1)制备带有栅介质层的重掺杂硅衬底；
    (2)转移二维过渡金属硫化物到硅衬底表面；
    (3)通过掩膜层定义沟道区、源区和漏区的位置；
    (4)在源区和漏区通过马来酰亚胺与二维过渡金属硫化物的点击化学反应实 现二维过渡金属硫化物的掺杂；
    (5)制备源区和漏区电极。
  8. 根据权利要求7所述的制备方法，其特征在于，所述源区和漏区电极通过光刻、显影、镀膜、剥离工艺制备，或者使用聚合物辅助转移方法制备。
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