WO2023201829A1 - 单端转差分麦克风电路及电子设备 - Google Patents

单端转差分麦克风电路及电子设备 Download PDF

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Publication number
WO2023201829A1
WO2023201829A1 PCT/CN2022/094173 CN2022094173W WO2023201829A1 WO 2023201829 A1 WO2023201829 A1 WO 2023201829A1 CN 2022094173 W CN2022094173 W CN 2022094173W WO 2023201829 A1 WO2023201829 A1 WO 2023201829A1
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Prior art keywords
transistor
type input
input transistor
amplifier
load
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PCT/CN2022/094173
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English (en)
French (fr)
Inventor
韩冬
蔡东记
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AAC Technologies Holdings Shenzhen Co Ltd
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AAC Acoustic Technologies Shenzhen Co Ltd
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Priority to JP2022579860A priority Critical patent/JP2024518859A/ja
Priority to US17/918,895 priority patent/US12335694B2/en
Publication of WO2023201829A1 publication Critical patent/WO2023201829A1/zh
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/181—Low-frequency amplifiers, e.g. audio preamplifiers
    • H03F3/183—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
    • H03F3/187—Low-frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45237—Complementary long tailed pairs having parallel inputs and being supplied in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • H03F3/45632—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit
    • H03F3/45636—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection in differential amplifiers with FET transistors as the active amplifying circuit by using feedback means
    • H03F3/45641—Measuring at the loading circuit of the differential amplifier
    • H03F3/45645—Controlling the input circuit of the differential amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/03—Indexing scheme relating to amplifiers the amplifier being designed for audio applications
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/45—Indexing scheme relating to differential amplifiers
    • H03F2203/45526—Indexing scheme relating to differential amplifiers the FBC comprising a resistor-capacitor combination and being coupled between the LC and the IC
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2410/00—Microphones
    • H04R2410/03—Reduction of intrinsic noise in microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R3/00—Circuits for transducers

Definitions

  • the invention relates to the field of electronic technology, and in particular to a single-ended to differential microphone circuit and electronic equipment.
  • Microphone circuits generally have two modes: single-ended output and differential output.
  • the single-ended output has relatively large noise, while the differential output can filter out the noise better.
  • the signal-to-noise ratio is highly sensitive to changes in the feedback capacitor C FB . If the feedback capacitor C FB becomes smaller, the signal-to-noise ratio at the output end will become worse.
  • the high voltage terminal V HCM is the AC ground, and the AC signal is input at the V INP terminal.
  • the common-mode voltage V IN,CM of the input terminals V INP and V INN will have a large amplitude.
  • the amplitude of V IN,CM is half of the amplitude of V OUTP . Therefore, the amplifier Amp must use an amplifier with a large input common-mode voltage range.
  • the purpose of the present invention is to provide a single-ended to differential microphone circuit and electronic equipment to solve the above technical problems.
  • an embodiment of the present invention provides a single-ended to differential microphone circuit, including: an amplifier, a microphone connected to the positive input terminal of the amplifier, a coupling capacitor C AC connected to the negative input terminal of the amplifier, and a coupling capacitor C AC connected to the negative input terminal of the amplifier.
  • Two feedback capacitors C FB1 are connected in parallel with a second feedback resistor R FB2 ;
  • the input terminals of the microphone and the coupling capacitor are connected to a bias resistor RB .
  • the bias resistor RB allows an alternating current signal to be input to the positive input terminal and the negative input terminal of the amplifier at the same time.
  • the capacitance size of the coupling capacitor C AC is at least 4 times that of the microphone.
  • the amplifier includes: P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, N-type input transistor M4, and an output load;
  • the sources of the P-type input transistor M1 and P-type input transistor M2 are connected to the bias current IB, and the gates of the P-type input transistor M1 and P-type input transistor M2 are respectively connected to the positive input terminal and the negative input terminal of the amplifier.
  • the drains of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the drains of the P-type input transistor M1 and the P-type input transistor M2.
  • the gates of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected.
  • the positive input terminal and the negative input terminal of the amplifier are connected, and the sources of the N-type input transistor M3 and N-type input transistor M4 are respectively connected to the output load.
  • the output load is a load transistor M5 and a load transistor M6.
  • the gates of the load transistor M5 and the load transistor M6 are respectively connected to the drains of the P-type input transistor M1 and P-type input transistor M2.
  • the load The drains of the transistor M5 and the load transistor M6 are respectively connected to the sources of the N-type input transistor M3 and the N-type input transistor M4;
  • the transconductances of the P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, and N-type input transistor M4 are added together and then converted into a voltage through the load transistor M5 and the load transistor M6 and output at the output end.
  • the equivalent capacitance of the microphone is less than 2pF.
  • the present invention provides an electronic device, including a single-ended to differential microphone circuit.
  • the single-ended to differential microphone circuit includes: an amplifier, a microphone connected to the positive input end of the amplifier, and a coupling capacitor connected to the negative input end of the amplifier.
  • C AC the first feedback capacitor C FB1 connected to the negative output terminal of the amplifier, the first feedback resistor R FB1 connected in parallel with the first feedback capacitor C FB1 , the second feedback capacitor C FB2 connected to the positive output terminal of the amplifier, and a second feedback resistor R FB2 in parallel with the second feedback capacitor C FB1 ;
  • the input terminals of the microphone and the coupling capacitor are connected to a bias resistor RB .
  • the bias resistor RB allows an alternating current signal to be input to the positive input terminal and the negative input terminal of the amplifier at the same time.
  • the capacitance size of the coupling capacitor C AC is at least 4 times that of the microphone.
  • the amplifier includes: P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, N-type input transistor M4, and an output load;
  • the sources of the P-type input transistor M1 and P-type input transistor M2 are connected to the bias current IB, and the gates of the P-type input transistor M1 and P-type input transistor M2 are respectively connected to the positive input terminal and the negative input terminal of the amplifier.
  • the drains of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the drains of the P-type input transistor M1 and the P-type input transistor M2.
  • the gates of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected.
  • the positive input terminal and the negative input terminal of the amplifier are connected, and the sources of the N-type input transistor M3 and N-type input transistor M4 are respectively connected to the output load.
  • the output load is a load transistor M5 and a load transistor M6.
  • the gates of the load transistor M5 and the load transistor M6 are respectively connected to the drains of the P-type input transistor M1 and P-type input transistor M2.
  • the load The drains of the transistor M5 and the load transistor M6 are respectively connected to the sources of the N-type input transistor M3 and the N-type input transistor M4;
  • the transconductances of the P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, and N-type input transistor M4 are added together and then converted into a voltage through the load transistor M5 and the load transistor M6 and output at the output end.
  • the equivalent capacitance of the microphone is less than 2pF.
  • the present invention maintains high impedance at both ends of the microphone C MEMS by introducing a bias resistor and combining it with the feedback resistor, and the two ends of the coupling capacitor C AC are also high impedance. Therefore, the AC signal can be transmitted through the amplifier.
  • V INP and V INN are inputs at both ends.
  • the coupling capacitor C AC AC -couples the input signal into V INN , and the microphone C MEMS itself will find an AC balance point internally.
  • C FB 2C MEMS . Therefore, the feedback capacitor C FB can be doubled relative to C MEMS , which can filter out more noise of the amplifier itself and improve the signal-to-noise ratio of the entire system.
  • the input terminal of the CR-Amp can simultaneously obtain the transconductance of P-type and N-type inputs under the same current bias condition, so that the input transconductance approximately doubles, thereby reducing the noise of the amplifier and improving signal-to-noise ratio of the entire system.
  • Figure 1 is a circuit schematic diagram of an existing single-ended to differential microphone circuit
  • Figure 2 is a circuit schematic diagram of a single-ended to differential microphone circuit in an embodiment of the present invention
  • Figure 3 is a schematic circuit diagram of an amplifier in an embodiment of the present invention.
  • the present invention provides a single-ended to differential microphone circuit, including: an amplifier CR-Amp, a microphone C MEMS connected to the positive input terminal V INP of the amplifier CR-Amp, and a negative input terminal V INP of the amplifier CR-Amp.
  • the output terminal V OUTP has a second feedback capacitor C FB2 and a second feedback resistor R FB2 in parallel with the second feedback capacitor C FB1 ; the input terminals of the microphone C MEMS and the coupling capacitor C AC are connected to a bias Resistor RB , the bias resistor RB allows the alternating current signal to be input at the positive input terminal and the negative input terminal of the amplifier at the same time.
  • the capacitance of the coupling capacitor C AC is at least 4 times that of the microphone, which is used to isolate the high voltage DC voltage at the R B terminal and prevent the negative input terminal of the amplifier from being connected to the high voltage DC voltage, thereby affecting the entire circuit.
  • V HCM is the high voltage bias voltage of 13.8V.
  • the amplifier includes: P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, N-type input transistor M4, and an output load; the P-type input transistor M1, P-type input transistor
  • the source of the transistor M2 is connected to the bias current IB, the gates of the P-type input transistor M1 and P-type input transistor M2 are respectively connected to the positive input terminal and the negative input terminal of the amplifier, and the N-type input transistor M3 and N-type input transistor
  • the drain of the transistor M4 is connected to the drain of the P-type input transistor M1 and the P-type input transistor M2 respectively, and the gates of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the positive input terminal and the negative input terminal of the amplifier,
  • the sources of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the output load.
  • the output load is a load transistor M5 and a load transistor M6.
  • the gates of the load transistor M5 and the load transistor M6 are respectively connected to the drains of the P-type input transistor M1 and the P-type input transistor M2.
  • the drains of the load transistor M5 and the load transistor M6 are respectively connected to the sources of the N-type input transistor M3 and N-type input transistor M4; the P-type input transistor M1, P-type input transistor M2, and N-type input transistor M3 , the transconductance of the N-type input transistor M4 is added and converted into a voltage through the load transistor M5 and the load transistor M6 and is output at the output end.
  • the transconductance of the amplifier in this embodiment is doubled and the noise is reduced.
  • the input common-mode voltage range of the amplifier in this embodiment is relatively small, since in this embodiment, AC signals can be input from the positive and negative input terminals V INP and V INN at the same time, the amplitude of the common-mode voltage V IN and CM at the input terminals will be significantly reduced, ideally zero, therefore, the entire circuit can adopt the amplifier structure in this embodiment.
  • the requirement for feedback capacitance is smaller. Therefore, the equivalent capacitance C MEMS of the microphone is less than 2pF.
  • the present invention maintains high impedance at both ends of the microphone C MEMS by introducing a bias resistor and combining it with the feedback resistor, and the two ends of the coupling capacitor C AC are also high impedance. Therefore, the AC signal can be transmitted through the amplifier.
  • V INP and V INN are inputs at both ends.
  • the coupling capacitor C AC AC -couples the input signal into V INN , and the microphone C MEMS itself will find an AC balance point internally.
  • C FB 2C MEMS . Therefore, the feedback capacitor C FB can be doubled relative to the microphone capacitance C MEMS , which can filter out more noise of the amplifier itself and improve the signal-to-noise of the entire system. Compare.
  • the present invention provides a single-ended to differential microphone circuit, including: an amplifier CR-Amp, a microphone C MEMS connected to the positive input terminal V INP of the amplifier CR-Amp, and a negative input terminal V INP of the amplifier CR-Amp.
  • the output terminal V OUTP has a second feedback capacitor C FB2 and a second feedback resistor R FB2 in parallel with the second feedback capacitor C FB1 ; the input terminals of the microphone C MEMS and the coupling capacitor C AC are connected to a bias Resistor RB , the bias resistor RB allows the alternating current signal to be input at the positive input terminal and the negative input terminal of the amplifier at the same time.
  • the capacitance of the coupling capacitor C AC is at least 4 times that of the microphone, which is used to isolate the high voltage DC voltage at the R B terminal and prevent the negative input terminal of the amplifier from being connected to the high voltage DC voltage, thereby affecting the entire circuit.
  • V HCM is the high voltage bias voltage of 13.8V.
  • the amplifier includes: P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, N-type input transistor M4, and an output load; the P-type input transistor M1, P-type input transistor
  • the source of the transistor M2 is connected to the bias current IB, the gates of the P-type input transistor M1 and P-type input transistor M2 are respectively connected to the positive input terminal and the negative input terminal of the amplifier, and the N-type input transistor M3 and N-type input transistor
  • the drain of the transistor M4 is connected to the drain of the P-type input transistor M1 and the P-type input transistor M2 respectively, and the gates of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the positive input terminal and the negative input terminal of the amplifier,
  • the sources of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the output load.
  • the output load is a load transistor M5 and a load transistor M6.
  • the gates of the load transistor M5 and the load transistor M6 are respectively connected to the drains of the P-type input transistor M1 and the P-type input transistor M2.
  • the drains of the load transistor M5 and the load transistor M6 are respectively connected to the sources of the N-type input transistor M3 and N-type input transistor M4; the P-type input transistor M1, P-type input transistor M2, and N-type input transistor M3 , the transconductance of the N-type input transistor M4 is added and converted into a voltage through the load transistor M5 and the load transistor M6 and is output at the output end.
  • the transconductance of the amplifier in this embodiment is doubled and the noise is reduced.
  • the input common-mode voltage range of the amplifier in this embodiment is relatively small, since in this embodiment, the AC signal can be input from the positive and negative input terminals V INP and V INN at the same time, the amplitude of the common-mode voltage V IN and CM at the input terminals will be significantly reduced, ideally zero, therefore, the entire circuit can adopt the amplifier structure in this embodiment.
  • the requirement for feedback capacitance is smaller. Therefore, the equivalent capacitance C MEMS of the microphone is less than 2pF.
  • the present invention maintains high impedance at both ends of the microphone C MEMS by introducing a bias resistor and combining it with the feedback resistor, and the two ends of the coupling capacitor C AC are also high impedance. Therefore, the AC signal can be transmitted through the amplifier.
  • V INP and V INN are inputs at both ends.
  • the coupling capacitor C AC AC -couples the input signal into V INN , and the microphone C MEMS itself will find an AC balance point internally.
  • C FB 2C MEMS . Therefore, the feedback capacitor C FB can be doubled compared to the microphone capacitance C MEMS , which can filter out more noise of the amplifier itself and improve the signal-to-noise of the entire system. Compare.
  • the input terminal of the CR-Amp can simultaneously obtain the transconductance of P-type and N-type inputs under the same current bias condition, so that the input transconductance approximately doubles, thereby reducing the noise of the amplifier and improving signal-to-noise ratio of the entire system.
  • the present invention provides an electronic device.
  • the electronic device can be a mobile phone, a music player, a computer and other intelligent devices.
  • These electronic devices include a single-ended to differential microphone circuit.
  • the single-ended to differential microphone circuit includes: an amplifier CR- Amp, the microphone C MEMS connected to the positive input terminal V INP of the amplifier CR-Amp, the coupling capacitor C AC connected to the negative input terminal V INN of the amplifier CR-Amp, and the first feedback connected to the negative output terminal V OUTN of the amplifier.
  • Capacitor C FB1 a first feedback resistor R FB1 connected in parallel with the first feedback capacitor C FB1 , a second feedback capacitor C FB2 connected with the positive output terminal V OUTP of the amplifier, and a second feedback resistor R FB1 connected in parallel with the second feedback capacitor C FB1
  • the second feedback resistor R FB2 the input terminals of the microphone C MEMS and the coupling capacitor C AC are connected to a bias resistor RB .
  • the bias resistor RB allows the alternating current signal to be transmitted on the positive side of the amplifier at the same time. input terminal and negative input terminal input.
  • the capacitance of the coupling capacitor C AC is at least 4 times that of the microphone. It is used to isolate the high voltage DC voltage at the R B terminal and prevent the negative input terminal of the amplifier from being connected to the high voltage DC voltage, thereby affecting the entire circuit. Make an impact.
  • V HCM is the high voltage bias voltage of 13.8V.
  • the amplifier includes: P-type input transistor M1, P-type input transistor M2, N-type input transistor M3, N-type input transistor M4, and an output load; the P-type input transistor M1, P-type input transistor
  • the source of the transistor M2 is connected to the bias current IB, the gates of the P-type input transistor M1 and P-type input transistor M2 are respectively connected to the positive input terminal and the negative input terminal of the amplifier, and the N-type input transistor M3 and N-type input transistor
  • the drain of the transistor M4 is connected to the drain of the P-type input transistor M1 and the P-type input transistor M2 respectively, and the gates of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the positive input terminal and the negative input terminal of the amplifier,
  • the sources of the N-type input transistor M3 and the N-type input transistor M4 are respectively connected to the output load.
  • the output load is a load transistor M5 and a load transistor M6.
  • the gates of the load transistor M5 and the load transistor M6 are respectively connected to the drains of the P-type input transistor M1 and the P-type input transistor M2.
  • the drains of the load transistor M5 and the load transistor M6 are respectively connected to the sources of the N-type input transistor M3 and N-type input transistor M4; the P-type input transistor M1, P-type input transistor M2, and N-type input transistor M3 , the transconductance of the N-type input transistor M4 is added and converted into a voltage through the load transistor M5 and the load transistor M6 and is output at the output end.
  • the transconductance of the amplifier in this embodiment is doubled and the noise is reduced.
  • the input working mode voltage range of the amplifier in this embodiment is relatively small, since in this embodiment, the AC signal can be input from the positive and negative input terminals V INP and V INN at the same time, the amplitude of the common mode voltage V IN and CM at the input terminals is will be significantly reduced, ideally zero, therefore, the entire circuit can adopt the amplifier structure in this embodiment.
  • the requirement for feedback capacitance is smaller. Therefore, the equivalent capacitance C MEMS of the microphone is less than 2pF.
  • the present invention maintains high impedance at both ends of the microphone C MEMS by introducing a bias resistor and combining it with the feedback resistor, and the two ends of the coupling capacitor C AC are also high impedance. Therefore, the AC signal can be transmitted through the amplifier.
  • V INP and V INN are inputs at both ends.
  • the coupling capacitor C AC AC -couples the input signal into V INN , and the microphone C MEMS itself will find an AC balance point internally.
  • C FB 2C MEMS . Therefore, the feedback capacitor C FB can be doubled relative to C MEMS , which can filter out more noise of the amplifier itself and improve the signal-to-noise ratio of the entire system.
  • the input terminal of the CR-Amp can simultaneously obtain the transconductance of P-type and N-type inputs under the same current bias condition, so that the input transconductance approximately doubles, thereby reducing the noise of the amplifier and improving signal-to-noise ratio of the entire system.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Amplifiers (AREA)
  • Circuit For Audible Band Transducer (AREA)

Abstract

本发明提供了一种单端转差分麦克风电路及电子设备，包括：放大器、连接于放大器正输入端的麦克风、连接于所述放大器负输入端的耦合电容C AC、连接所述放大器负输出端的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；所述麦克风以及所述耦合电容的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。本发明的电路可以采用电容更小的麦克风结构，同时具有更好的系统信噪比。

Description

单端转差分麦克风电路及电子设备 技术领域
本发明涉及电子技术领域，尤其涉及一种单端转差分麦克风电路及电子设备。
 背景技术
麦克风电路一般具有单端输出和差分输出两种方式。其中，单端输出的噪声比较大，而差分输出可以较好的过滤掉噪声。
传统的单端转差分电路如图1所示，在设置闭环增益为1时，需要电路中的C DMY=C MEMS=C FB ，然而随着麦克风技术的发展，麦克风的等效电容C MEMS越做越小，这样为了维持闭环增益为1的情况下，反馈电容C FB的大小也需要相应的变小。
技术问题
信噪比对于反馈电容C FB的变化灵敏度较高，若反馈电容C FB变小，会导致输出端信噪比变差。另外，高电压端V HCM是交流地，交流信号在V INP端输入。当输入信号的振幅大时，输入端V INP和V INN的共模电压V IN,CM会有很大的振幅。 V IN,CM的振幅是V OUTP端振幅的一半。因此放大器Amp必须使用输入共模电压范围大的放大器。
技术解决方案
本发明的目的在于提供一种单端转差分麦克风电路及电子设备，用于解决上述技术问题。
为了达到上述目的，第一方面，本发明实施例提供了一种单端转差分麦克风电路，包括：放大器、连接于放大器正输入端的麦克风、连接于所述放大器负输入端的耦合电容C AC、连接所述放大器负输出端的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；
所述麦克风以及所述耦合电容的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
优选的，耦合电容C AC的电容大小至少为所述麦克风的4倍。
优选的，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；
所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别连至输出负载。
优选的，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；
所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
优选的，所述麦克风的等效电容小于2pF。
第二方面，本发明提供一种电子设备，包括单端转差分麦克风电路，所述单端转差分麦克风电路包括：放大器、连接于放大器正输入端的麦克风、连接于所述放大器负输入端的耦合电容C AC、连接所述放大器负输出端的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；
所述麦克风以及所述耦合电容的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
优选的，耦合电容C AC的电容大小至少为所述麦克风的4倍。
优选的，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；
所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别连至输出负载。
优选的，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；
所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
优选的，所述麦克风的等效电容小于2pF。
 有益效果
与相关技术相比，本发明通过引入一偏置电阻、并结合反馈电阻保持麦克风C MEMS两端是高阻抗，耦合电容C AC的两端也同样是高阻抗，因而交流电信号可以在放大器的V INP和V INN两端输入。耦合电容C AC对输入信号交流耦合后进入V INN，麦克风C MEMS自身会在内部找到交流平衡点。当闭环增益为1时，C FB=2C MEMS，由此，反馈电容C FB 可以相对于C MEMS增大一倍，进而能够更多地滤除放大器自身的噪声，提高整个系统的信噪比。
在一个实施例中，因为交流信号能够同时从正负输入端V INP 、V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下甚至为零。也因此可以采用输入共模电压范围比较小的电流共用型放大器（Current-Reuse Amp, CR-Amp）。
在一个实施例中，CR-Amp的输入端可以在相同电流偏置情况下，同时获得P型和N型输入的跨导，使得输入跨导增加约一倍，从而减小放大器的噪声，提高整个系统的信噪比。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其它的附图，其中：
图1为现有一种单端转差分麦克风电路的电路原理图；
图2为本发明实施例中单端转差分麦克风电路的电路原理图；
图3为本发明实施例中放大器的电路原理图。
 本发明的最佳实施方式
请参阅图1，本发明提供了一种单端转差分麦克风电路，包括：放大器CR-Amp、连接于放大器CR-Amp正输入端V INP的麦克风C MEMS、连接于所述放大器CR-Amp负输入端V INN的耦合电容C AC、连接所述放大器负输出端V OUTN的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端V OUTP第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；所述麦克风C MEMS以及所述耦合电容C AC的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
在本实施例中，耦合电容C AC的电容大小至少为所述麦克风的4倍，用于隔离R B端的高电压直流电压，避免放大器的负输入端接入高电压直流电压，进而对整个电路产生影响。V HCM是13.8V的高电压偏置电压。
在本实施例中，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别至输出负载。
在本实施例中，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
本实施例的放大器在同样的偏置电流下，其跨导增大一倍，噪声减小。虽然本实施例中的放大器输入共模电压范围比较小，但是，由于本实施例中，交流信号能够同时从正负输入端V INP，V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下为零，因此，整个电路可以采用本实施例中的放大器结构。
在本实施例中，基于其对反馈电容的要求更小，因此，所述麦克风的等效电容C MEMS小于2pF。
与相关技术相比，本发明通过引入一偏置电阻、并结合反馈电阻保持麦克风C MEMS两端是高阻抗，耦合电容C AC的两端也同样是高阻抗，因而交流电信号可以在放大器的V INP和V INN两端输入。耦合电容C AC对输入信号交流耦合后进入V INN，麦克风C MEMS自身会在内部找到交流平衡点。当闭环增益为1时，C FB=2C MEMS，由此，反馈电容C FB 可以相对于麦克风电容C MEMS增大一倍，进而能够更多地滤除放大器自身的噪声，提高整个系统的信噪比。
本发明的实施方式
实施例一
请参阅图1，本发明提供了一种单端转差分麦克风电路，包括：放大器CR-Amp、连接于放大器CR-Amp正输入端V INP的麦克风C MEMS、连接于所述放大器CR-Amp负输入端V INN的耦合电容C AC、连接所述放大器负输出端V OUTN的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端V OUTP第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；所述麦克风C MEMS以及所述耦合电容C AC的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
在本实施例中，耦合电容C AC的电容大小至少为所述麦克风的4倍，用于隔离R B端的高电压直流电压，避免放大器的负输入端接入高电压直流电压，进而对整个电路产生影响。V HCM是13.8V的高电压偏置电压。
在本实施例中，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别至输出负载。
在本实施例中，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
本实施例的放大器在同样的偏置电流下，其跨导增大一倍，噪声减小。虽然本实施例中的放大器输入共模电压范围比较小，但是，由于本实施例中，交流信号能够同时从正负输入端V INP，V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下为零，因此，整个电路可以采用本实施例中的放大器结构。
在本实施例中，基于其对反馈电容的要求更小，因此，所述麦克风的等效电容C MEMS小于2pF。
与相关技术相比，本发明通过引入一偏置电阻、并结合反馈电阻保持麦克风C MEMS两端是高阻抗，耦合电容C AC的两端也同样是高阻抗，因而交流电信号可以在放大器的V INP和V INN两端输入。耦合电容C AC对输入信号交流耦合后进入V INN，麦克风C MEMS自身会在内部找到交流平衡点。当闭环增益为1时，C FB=2C MEMS，由此，反馈电容C FB 可以相对于麦克风电容C MEMS增大一倍，进而能够更多地滤除放大器自身的噪声，提高整个系统的信噪比。
在一个实施例中，因为交流信号能够同时从正负输入端V INP 、V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下甚至为零。也因此可以采用输入共模电压范围比较小的电流共用型放大器（Current-Reuse Amp, CR-Amp）。
在一个实施例中，CR-Amp的输入端可以在相同电流偏置情况下，同时获得P型和N型输入的跨导，使得输入跨导增加约一倍，从而减小放大器的噪声，提高整个系统的信噪比。
实施例二
本发明提供一种电子设备，该电子设备可以是手机、音乐播放器、电脑等智能设备，这些电子设备中包括单端转差分麦克风电路，所述单端转差分麦克风电路，包括：放大器CR-Amp、连接于放大器CR-Amp正输入端V INP的麦克风C MEMS、连接于所述放大器CR-Amp负输入端V INN的耦合电容C AC、连接所述放大器负输出端V OUTN的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端V OUTP第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；所述麦克风C MEMS以及所述耦合电容C AC的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
在本实施例中，耦合电容C AC的电容大小至少为所述麦克风的4倍，用于隔离R B端的高电压直流电压，避免放大器的负输入端接入高电压直流电压，进而对整个电路产生影响。V HCM是13.8V的高电压偏置电压。
在本实施例中，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别连至输出负载。
在本实施例中，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
本实施例的放大器在同样的偏置电流下，其跨导增大一倍，噪声减小。虽然本实施例中的放大器输入工模电压范围比较小，但是，由于本实施例中，交流信号能够同时从正负输入端V INP，V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下为零，因此，整个电路可以采用本实施例中的放大器结构。
在本实施例中，基于其对反馈电容的要求更小，因此，所述麦克风的等效电容C MEMS小于2pF。
与相关技术相比，本发明通过引入一偏置电阻、并结合反馈电阻保持麦克风C MEMS两端是高阻抗，耦合电容C AC的两端也同样是高阻抗，因而交流电信号可以在放大器的V INP和V INN两端输入。耦合电容C AC对输入信号交流耦合后进入V INN，麦克风C MEMS自身会在内部找到交流平衡点。当闭环增益为1时，C FB=2C MEMS，由此，反馈电容C FB 可以相对于C MEMS增大一倍，进而能够更多地滤除放大器自身的噪声，提高整个系统的信噪比。
在一个实施例中，因为交流信号能够同时从正负输入端V INP 、V INN输入，输入端的共模电压V IN,CM的振幅会显著减小，理想情况下甚至为零。也因此可以采用输入共模电压范围比较小的电流共用型放大器（Current-Reuse Amp, CR-Amp）。
在一个实施例中，CR-Amp的输入端可以在相同电流偏置情况下，同时获得P型和N型输入的跨导，使得输入跨导增加约一倍，从而减小放大器的噪声，提高整个系统的信噪比。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (10)

  1. 一种单端转差分麦克风电路，其特征在于，包括：放大器、连接于放大器正输入端的麦克风、连接于所述放大器负输入端的耦合电容C AC、连接所述放大器负输出端的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；
    所述麦克风以及所述耦合电容的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
  2. 根据权利要求1所述的单端转差分麦克风电路，其特征在于，耦合电容C AC的电容大小至少为所述麦克风的4倍。
  3. 根据权利要求1所述的单端转差分麦克风电路，其特征在于，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；
    所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别连至输出负载。
  4. 根据权利要求3所述的单端转差分麦克风电路，其特征在于，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；
    所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
  5. 根据权利要求1所述的单端转差分麦克风电路，其特征在于，所述麦克风的等效电容小于2pF。
  6. 一种电子设备，包括单端转差分麦克风电路，其特征在于，所述单端转差分麦克风电路包括：放大器、连接于放大器正输入端的麦克风、连接于所述放大器负输入端的耦合电容C AC、连接所述放大器负输出端的第一反馈电容C FB1、与所述第一反馈电容C FB1并联的第一反馈电阻R FB1、连接所述放大器正输出端第二反馈电容C FB2、以及与所述第二反馈电容C FB1并联的第二反馈电阻R FB2；
    所述麦克风以及所述耦合电容的输入端连接至一偏置电阻R B，所述偏置电阻R B使交流电信号可以同时在所述放大器的正输入端和负输入端输入。
  7. 根据权利要求6所述的电子设备，其特征在于，耦合电容C AC的电容大小至少为所述麦克风的4倍。
  8. 根据权利要求6所述的电子设备，其特征在于，所述放大器包括：P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4、以及输出负载；
    所述P型输入晶体管M1、P型输入晶体管M2的源极接偏置电流IB，所述P型输入晶体管M1、P型输入晶体管M2的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的漏极分别连接P型输入晶体管M1、P型输入晶体管M2的漏极，所述N型输入晶体管M3、N型输入晶体管M4的栅极分别连接放大器的正输入端和负输入端，所述N型输入晶体管M3、N型输入晶体管M4的源极分别连至输出负载。
  9. 根据权利要求8所述的电子设备，其特征在于，所述输出负载为负载晶体管M5和负载晶体管M6，所述负载晶体管M5、负载晶体管M6的栅极分别连接所述P型输入晶体管M1、P型输入晶体管M2的漏极，所述负载晶体管M5、负载晶体管M6的漏极分别连接所述N型输入晶体管M3、N型输入晶体管M4的源极；
    所述P型输入晶体管M1、P型输入晶体管M2、N型输入晶体管M3、N型输入晶体管M4的跨导相加后经过所述负载晶体管M5、负载晶体管M6转变为电压在输出端输出。
  10. 根据权利要求6所述的电子设备，其特征在于，所述麦克风的等效电容小于2pF。
PCT/CN2022/094173 2022-04-19 2022-05-20 单端转差分麦克风电路及电子设备 Ceased WO2023201829A1 (zh)

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