WO2023197553A1 - 掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法 - Google Patents

掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法 Download PDF

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WO2023197553A1
WO2023197553A1 PCT/CN2022/126146 CN2022126146W WO2023197553A1 WO 2023197553 A1 WO2023197553 A1 WO 2023197553A1 CN 2022126146 W CN2022126146 W CN 2022126146W WO 2023197553 A1 WO2023197553 A1 WO 2023197553A1
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Prior art keywords
mask
light
reticle
modulated
frequency band
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PCT/CN2022/126146
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English (en)
French (fr)
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李西军
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西湖大学
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Publication of WO2023197553A1 publication Critical patent/WO2023197553A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0126—Opto-optical modulation, i.e. control of one light beam by another light beam, not otherwise provided for in this subclass
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Definitions

  • the present disclosure relates generally to the field of photolithography technology, and more specifically, to a reticle, a photolithography apparatus, a reticle manufacturing method, and a reticle-based photolithography method.
  • the purpose of this disclosure is to provide a mask, a photolithography apparatus, a mask manufacturing method, and a mask-based photolithography method.
  • a reticle comprising: a substrate configured to be transparent to an exposure beam for photolithography, wherein the exposure beam is in a first frequency band; and a photochromic layer disposed on one side of the substrate and including a photochromic material, the photochromic layer being configured to produce a corresponding mask under irradiation with a modulated light beam having a spatial structure.
  • a template pattern wherein the photochromic material is in a non-light-transmitting state or a light-transmitting state to the exposure beam based on whether it is irradiated by the modulated light in the modulated light beam, and the modulated light beam is in a third frequency band separated from the first frequency band. in the second frequency band.
  • the substrate includes at least one of quartz and calcium fluoride.
  • the photochromic material is configured to be in a non-transmissive state to the exposure beam when illuminated by the modulated light in the modulated beam; and the photochromic material is configured to be in a non-transmissive state to the exposure beam when not exposed to the modulated light.
  • the modulated light in the modulated beam is irradiated, it is in a light-transmitting state to the exposure beam.
  • the photochromic material is configured to be in a light-transmissive state to the exposure beam when illuminated by modulated light in the modulated beam; and the photochromic material is configured to be in a light-transmissive state to the exposure beam when not modulated.
  • the modulated light in the beam is irradiated, it is in a non-transmissive state to the exposure beam.
  • the light transmittance to the exposure beam is 60% to 99%.
  • the light transmittance to the exposure beam is 5% to 30%.
  • the wavelength corresponding to the first frequency band includes 193-405 nm.
  • the wavelength corresponding to the first frequency band includes at least one of 193nm, 248nm, 325nm, 365nm and 405nm.
  • the wavelength corresponding to the second frequency band includes 500-580 nm, or 580-1100 nm, or a part of 500-580 nm, or a part of 580-1100 nm.
  • the wavelength corresponding to the second frequency band includes 633 nm.
  • the photochromic layer includes a photochromic material in the form of a continuous film.
  • the thickness of the photochromic layer is 50-200 nm or 200-5000 nm.
  • the photochromic material includes at least one of an organic photochromic material and an inorganic photochromic material.
  • the photochromic material includes 1,2-bis(5,5'-dimethyl-2,2'-diphenylthio)perfluorocyclopent-1-ene.
  • the reticle further includes a modulated light source configured to generate a modulated light beam with a spatial structure.
  • the modulated light source includes a first light generator configured to generate an initial light beam in a second frequency band, the initial light beam having a direction perpendicular to its direction of travel. Uniform light intensity distribution on the cross section; and a spatial light modulator configured to convert the initial light beam into a modulated light beam with a spatial structure under the action of a control signal, wherein the control signal It is generated based on the mask pattern.
  • the modulated light beam is a near-field light beam relative to the photochromic layer.
  • the reticle further includes: a temperature controller, the temperature controller includes a temperature maintenance unit configured to be disposed adjacent to the substrate or the photochromic layer to The temperature of the reticle is maintained within a preset temperature range.
  • a lithography apparatus includes: the reticle as described above; and a control module configured to generate a control signal according to the design layout, the The control signal is used to generate a modulated beam with a spatial structure corresponding to the design layout.
  • the lithographic apparatus further includes a modulated light source configured to generate a modulated light beam with a spatial structure.
  • the modulated light source includes a first light generator configured to generate an initial light beam in a second frequency band, the initial light beam having a direction perpendicular to its direction of travel. Uniform light intensity distribution on the cross section; and a spatial light modulator configured to convert the initial light beam into a modulated light beam with a spatial structure under the action of a control signal, wherein the control signal It is generated based on the mask pattern.
  • the lithography apparatus further includes: a temperature controller, the temperature controller includes a temperature maintenance unit, the temperature maintenance unit is configured to be disposed adjacent to the substrate or the photochromic layer, to maintain the temperature of the reticle within a preset temperature range.
  • the lithography apparatus further includes: a second light generator configured to generate the exposure beam in the first frequency band.
  • the exposure beam has a uniform intensity distribution in a cross section perpendicular to its direction of travel.
  • a method for manufacturing a reticle includes: providing a substrate configured to be transparent to an exposure beam used for photolithography, wherein the exposure beam is in a in a frequency band; and forming a photochromic layer on one side of the substrate, the photochromic layer comprising a photochromic material, the photochromic layer being configured to generate light under irradiation with a modulated light beam having a spatial structure Corresponding mask pattern, wherein the photochromic material is in a non-transmissive state or a translucent state to the exposure beam based on whether it is illuminated by the modulated light in the modulated beam, and the modulated beam is in a state separated from the first frequency band In the second frequency band that is turned on.
  • a mask-based photolithography method is proposed.
  • the mask is the mask as described above.
  • the photolithography method includes: irradiating a modulated beam with a spatial structure onto the mask. on the reticle to generate a corresponding reticle pattern in the reticle; after the reticle pattern is generated, the exposure beam is irradiated on the wafer through the reticle to expose the wafer; after completion After exposure of the wafer, the exposure beam is turned off; and after the exposure beam is turned off, the modulation beam is turned off.
  • the intensity of the modulation beam is greater than the intensity of the exposure beam.
  • the photolithography method further includes: operating a temperature controller to maintain the temperature of the reticle within a preset temperature range.
  • Figure 1 is a schematic structural diagram of a mask according to an exemplary embodiment of the present disclosure
  • FIG. 2 is a schematic diagram of a reticle illuminated by an exposure beam and a modulated beam according to an exemplary embodiment of the present disclosure
  • FIG. 3 is a schematic cross-sectional view of a reticle illuminated by an exposure beam and a modulated beam according to an exemplary embodiment of the present disclosure
  • Figure 4 is a schematic structural diagram of a lithography apparatus according to an exemplary embodiment of the present disclosure
  • Figure 5 is a schematic flowchart of a method for manufacturing a reticle according to an exemplary embodiment of the present disclosure
  • FIG. 6 is a schematic flowchart of a mask-based photolithography method according to an exemplary embodiment of the present disclosure.
  • the specification uses the terms “includes,” “includes,” and “containing” to indicate the presence of claimed features but does not exclude the presence of one or more other features.
  • the term “and/or” includes any and all combinations of one or more of the associated listed items.
  • the terms “between X and Y” and “about between X and Y” used in the specification should be construed to include both X and Y.
  • the term “between approximately X and Y” as used in this specification means “between approximately X and approximately Y”, and the term “from approximately X to Y” as used in this specification means “from approximately to approximately Y”.
  • an element is referred to as being “on,” “attached to,” “connected to” another element, “coupled to” another element, or “contacting” another element.
  • the element can be directly on, attached to, connected to, coupled to, or contacting another element, or intervening elements may be present.
  • one element is said to be “directly on”, “directly attached to”, “directly connected to”, “directly coupled to” another element or, or “directly coupled” to another element.
  • a feature being arranged “adjacent” to another feature may mean that one feature has a portion that overlaps the adjacent feature or that is located above or below the adjacent feature.
  • spatial relationship terms such as “upper”, “lower”, “left”, “right”, “front”, “back”, “high”, “low”, etc. can describe the relationship between one feature and another feature. relationship in the attached figure. It will be understood that the spatially relative terms encompass different orientations of the device in use or operation in addition to the orientation depicted in the drawings. For example, if the device in the figures is turned over, features described as “below” other features would now be described as “above” other features. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the relative spatial relationships will be interpreted accordingly.
  • the reticle may include a substrate (eg, quartz glass) capable of transmitting an exposure beam (eg, ultraviolet beam, etc.) used to change the properties of the resist (photoresist) and deposited on the substrate. Coating used to prevent the above-mentioned exposure beam from transmitting (for example, metallic chromium film).
  • an exposure beam eg, ultraviolet beam, etc.
  • a chromium film tens of nanometers thick and an etch resist on the chromium film can be deposited sequentially on quartz glass, and then laser direct writing or electron beam exposure is used to etch the resist.
  • the required pattern is formed on the resist, and then the chromium exposed from the resist is wet etched or dry etched to form a pattern corresponding to the desired structure on the chromium film.
  • the laser direct writing method is usually used to form a mask with a minimum line width of more than 300 nm
  • the electron beam exposure method can be used to form a mask with a minimum line width of less than 300 nm.
  • the cost of a single mask is approximately tens of thousands of dollars, while the cost of a complete set of masks for a complete device or chip production process may be as high as millions of dollars.
  • the cost of a complete set of masks for a complete device or chip production process may be as high as millions of dollars.
  • its structure is difficult to change.
  • single batches of chips including central processing units (CPUs), dynamic random access memories (DRAM), flash memories, etc. are usually in the order of millions or even hundreds of millions, so they can be well amortized.
  • the cost of manufacturing the mask allows the mask-based photolithography process to be widely used in the manufacturing of these devices or chips.
  • defects in the reticle may also significantly increase the cost of producing devices or chips. Specifically, if there are small defects in the mask, it will take time to detect and repair the defects; and if there are large defects in the mask, the entire mask may have to be scrapped.
  • this disclosure proposes a programmable, programmable Erase and reuse digital photolithography masks.
  • the light transmission state of the corresponding pixel area in the mask can be reversibly changed by controlling a modulated beam with a spatial structure to illuminate the mask with photochromic material, so that the light transmission state of the corresponding pixel area on the same mask can be changed
  • the pattern can be changed as needed, thereby enabling reuse of the mask, thereby reducing the production cost of devices or chips.
  • the reticle may include a substrate 110 and a photochromic layer 120 .
  • the substrate 110 may be configured to be transparent to the exposure beam used for photolithography to avoid interference with the photolithography process.
  • the exposure beam may be in a first frequency band, typically corresponding to the frequency band in which part of the ultraviolet light is located.
  • the wavelength corresponding to the first frequency band may include 193 to 405 nm.
  • the wavelength corresponding to the first frequency band may include at least one of 193 nm, 248 nm, 325 nm, 365 nm, and 405 nm.
  • the substrate 110 may be made of a material with a certain structural strength for supporting other layers of the reticle disposed thereon.
  • the substrate 110 may be made of quartz glass, calcium fluoride glass, or the like.
  • the photochromic layer 120 may be disposed on one side of the substrate 110, and the photochromic layer 120 may include a photochromic material, and generate a corresponding mask pattern under irradiation of a modulated light beam with a spatial structure.
  • the modulated light beam 930 with a spatial structure specifically refers to a light beam with non-uniform intensity distribution in a cross section perpendicular to its traveling direction.
  • the modulated light intensity of some areas may be zero, while other areas may have non-zero modulated light intensity.
  • the photochromic material will be in a non-light-transmitting state or a light-transmitting state to the exposure beam based on whether it is irradiated by the modulated light in the modulated light beam, and accordingly forms a non-light-transmitting area and a light-transmitting area in the mask, thereby producing the desired mask pattern.
  • the photochromic material when the photochromic material is opposite to the area with non-zero modulated light intensity on the cross section of the modulated beam 930, that is, when the photochromic material is irradiated by the modulated light in the modulated beam 930, this part of the light
  • the chromic material will absorb the modulated light and be in a non-transmissive state to the exposure beam (for example, the organic photochromic material absorbs the modulated light as deexcitation light to produce a high absorption rate of ultraviolet light as the exposure beam, resulting in this part
  • the organic photochromic material is in a non-transmissive state to the exposure beam), corresponding to the non-transmissive region 122 of the photochromic material to the exposure beam 920 shown in FIG.
  • the photochromic material when the photochromic material is in a non-transmissive state to the exposure beam, when the area with zero modulated light intensity on the cross section 930 is opposite, that is, when the photochromic material is not illuminated by the modulated light in the modulated beam 930, this part of the photochromic material will be in a light-transmitting state to the exposure beam, corresponding to The light-transmitting area 121 of the photochromic material to the exposure beam 920 is shown in FIG. 3 . Therefore, the light-transmitting area 121 and the non-light-transmitting area 122 for the exposure beam 920 can be formed in the photochromic layer 120 by controlling the intensity spatial distribution of the modulated light beam, or by controlling the spatial structure of the modulated light beam. The combination of these areas A desired reticle pattern can be formed in the reticle.
  • the photochromic material when the photochromic material is opposite to a region with non-zero modulated light intensity on the cross section of the modulated beam, that is, the photochromic material is illuminated by the modulated light in the modulated beam. At that time, this part of the photochromic material can also be in a light-transmitting state to the exposure beam; and when the photochromic material is opposite to the area where the modulated light intensity is zero on the cross section of the modulated beam, that is, the photochromic material is not When the modulated light in the modulated beam is irradiated, this part of the photochromic material can be in a non-transmissive state to the exposure beam.
  • the non-light-transmitting state (or light-transmitting state) can only be maintained when the modulated light is irradiated on the photochromic material, and once the modulated light is removed, the photochromic material will recover. to its default state. Therefore, when using a mask including such a photochromic material for photolithography, it is necessary to expose the wafer/sample with an exposure beam while keeping the modulated beam also irradiating on the mask to maintain the transparency in the mask. The light area and non-light-transmitting area remain unchanged, or the mask pattern remains unchanged until photolithography is completed.
  • the modulated beam 930 cannot change the properties of the resist (eg, photoresist), which requires the modulated beam 930 to be in the same position as the exposure beam 920.
  • one frequency band separated by a second frequency band separated first frequency band and second frequency band means that any frequency in the first frequency band is different from any frequency in the second frequency band.
  • the wavelength corresponding to the second frequency band may include 500-580 nm, or 580-1100 nm, or a part of 500-580 nm, or a part of 580-1100 nm.
  • the wavelength corresponding to the second frequency band may be 633 nm.
  • the photochromic material in the mask In order to ensure that when the photochromic material in the mask is in a light-transmitting state, it can allow enough exposure beam to pass through to expose the sample, and when it is in a non-light-transmitting state, it can block the exposure beam enough to avoid damaging the wafer. / Exposure of the sample, the light transmittance of the photochromic material in the light-transmitting state and the non-light-transmitting state should meet certain requirements. In a specific example, when the photochromic material is in a light-transmitting state, its light transmittance to the exposure beam can be 60% to 99%; and when the photochromic material is in a non-light-transmitting state, its light transmittance to the exposure beam The light transmittance can be 5% to 30%.
  • the photochromic material may include at least one of an organic photochromic material and an inorganic photochromic material.
  • organic photochromic materials can include liquid tetracene solutions, benzalphenylhydrazines solutions, osazones solutions, etc., as well as solid 2,3,4, 4-tetrachloronaphthalen-1-(4H)-one (2,3,4,4-tetrachloronaphthalen-1-(4H)-one), spironaphthoxazines organic materials, diarylethene ) materials, azobenzene derivatives, 1,2-bis(5,5'-dimethyl-2,2'-diphenylthio)perfluorocyclopent-1-ene(1,2 -bis(5,5'-dimethyl-2,2'-bithiophen-yl)perfluorocyclopent-1-ene), etc.
  • inorganic photochromic materials can include a variety of transition metal oxides and their composite materials, such as
  • the photochromic materials that can be used should at least have the following properties: (1)
  • the light-transmitting and non-light-transmitting states of the photochromic material can be controlled by modulating the light beam.
  • the photochromic material can be reversibly converted to achieve a rewritable and reusable reticle, that is, the photochromic material has a sufficiently high resistance to the exposure beam in the first frequency band without being irradiated by the modulated light in the modulated beam.
  • the light transmittance of the exposure beam in the first frequency band is low enough when illuminated by the modulated light in the modulated light beam, or when illuminated by the modulated light in the unmodulated light beam.
  • the light transmittance; and (2) the second frequency band of the modulated light beam used to reversibly switch the light-transmitting state and the non-light-transmitting state of the photochromic material is divided into the first frequency band of the exposure light beam (ultraviolet light) separated to avoid interference with the photolithography process.
  • Cyclopent-1-ene (1,2-bis(5,5'-dimethyl-2,2'-bithiophen-yl)perfluorocyclopent-1-ene) is used as a photochromic material in the mask.
  • photochromic materials with better heat dissipation and lower required modulated beam intensity can be selected to reduce the significant increase in mask temperature caused by the irradiation of the modulated beam, thereby improving the reliability of photolithography.
  • the photochromic layer 120 may include a photochromic material in the form of a continuous film, so that the mask can be prepared by deposition methods such as lamination, spin coating, and spraying.
  • the thickness of the photochromic layer 120 may be 50-200 nm or 200-5000 nm.
  • a patterned photochromic layer can also be formed as needed, and the above-mentioned patterned photochromic layer can be formed using laser direct writing, electron beam direct writing, photolithography based on another mask, etc. .
  • a liquid photochromic material can also be used as needed.
  • a barrier layer can be disposed above the photochromic layer 120 to limit the liquid photochromic material to the substrate 110 and the barrier layer to maintain the stable nature of the mask structure to ensure the exposure effect.
  • a modulated light source 200 may also be included, and the modulated light source 200 may be regarded as a part of the reticle, or may be provided independently of the reticle in a lithography apparatus containing the reticle. Modulated light source 200 may be configured to generate a modulated light beam with spatial structure.
  • the modulated light source 200 may include a first light generator 210 and a spatial light modulator 220, wherein the first light generator 210 may be configured to generate an initial light beam in the second frequency band, the initial light beam having a frequency perpendicular to Uniform light intensity distribution on the cross section in its traveling direction; and the spatial light modulator 220 can be configured to convert the initial light beam into a modulated light beam with a spatial structure under the action of a control signal, wherein the control signal can be based on the mask Pattern generated.
  • the spatial structure of the modulated light beam corresponds to the desired reticle pattern, so as to form corresponding light-transmitting areas and non-light-transmitting areas by irradiating the modulated light beam onto the photochromic material in the reticle.
  • the spatial light modulator may be an optical phase modulator.
  • the spatial light modulator can realize a number of pixels of 4160x2464 and a pixel period of 3.74 ⁇ m.
  • a modulated beam with a wavelength of 633 nm can be used to form a pattern on the mask consisting of tiny light spots with a size of 3 to 4 ⁇ m and a period of 6 to 8 ⁇ m.
  • the minimum line width that can be processed is about 1 ⁇ m, and the area of a single exposure is 1x1cm 2 .
  • the photolithography yield of this mask can reach 600cm 2 /min.
  • the above-mentioned yield is 100 times that of laser direct writing, so it can meet the photolithography needs of next-generation printed circuit boards and chip packaging.
  • the wavelength of the modulated beam is 633nm
  • the minimum resolution pattern it can produce is around 400nm.
  • the reticle of the present disclosure may be limited by the diffraction effect of the modulated beam, the minimum line width on the reticle is usually around 400 nm, but combined with a higher magnification reduction projection lithography, such as ten times (10x) reduction projection light Engraving technology, etc., and using, for example, a 193nm deep ultraviolet (DUV) exposure beam for exposure, can further improve the minimum line width of photolithography to below 45nm to meet the production needs of advanced chips.
  • a higher magnification reduction projection lithography such as ten times (10x) reduction projection light Engraving technology, etc.
  • DUV deep ultraviolet
  • the exposure beam generated by the second light generator 300 may be a near-field beam relative to the mask.
  • the modulated light beam generated by the modulated light source 200 can also be a near-field light beam relative to the photochromic layer in the mask, so as to avoid the impact on accuracy caused by the optical diffraction effect of the far-field light beam and improve the quality of the mask pattern. accuracy.
  • the increase in temperature of the template or sample may also include a temperature controller 400.
  • the thermostat 400 may be considered included in the reticle or provided independently of the reticle in a lithographic apparatus containing the reticle.
  • the temperature controller 400 may include a temperature maintaining unit, which may be configured to be disposed adjacent to the substrate 110 or the photochromic layer 120 to maintain the temperature of the reticle within a preset temperature range.
  • the thermostat can be a liquid-cooled thermostat, a thermoelectric semiconductor thermostat, etc., which is not limited here.
  • the light intensity of the exposure beam required during the exposure process is usually 10 ⁇ 10000mW/cm 2
  • the light intensity of the modulated light beam used to change the light transmission state of the photochromic material usually needs to be 10 ⁇ 10000W. /cm 2 range.
  • the light intensity of a modulated beam with a wavelength of 633 nm may be more than 1,000 times that of an exposure beam with a wavelength of 325 nm.
  • the temperature controller 400 By using the temperature controller 400 to keep the reticle within a preset temperature range, the reticle can be prevented from being damaged by a stronger modulated beam, and even a modulated beam of higher intensity (such as 100kW/cm 2 ) can be used.
  • a modulated beam of higher intensity such as 100kW/cm 2
  • the photochromic material is used to control the reversible change of the light transmission state of each pixel area.
  • the corresponding mask pattern can be directly formed based on the data file of the required device or chip structure, and the mask pattern on the same mask can be erased, realizing the reusability of the mask and improving the use of the mask.
  • Efficiency reduces the manufacturing cost of devices or chips and avoids a series of problems caused by the high cost of masks in traditional photolithography.
  • a photolithography apparatus may include the mask plate 100 and the control module 500 as described above.
  • the lithography apparatus may further include a modulated light source 200 as described above, configured to generate an exposure beam in a first frequency band (the exposure beam generally has a uniform cross-section perpendicular to its direction of travel).
  • the control module 500 may be configured to generate a control signal according to the layout, and the control signal is used to generate a modulated light beam with a spatial structure corresponding to the layout.
  • control module 500 can be used to generate multiple mask patterns corresponding to one or more layers in the layout of a device or chip, and generate corresponding control signals according to each mask pattern. Further, the control module 500 can transmit the control signal to the spatial light modulator 220, so that the spatial light modulator 220 changes the light transmission state of each pixel area in the mask according to the control signal.
  • the data file of the pattern that needs to be exposed can be used to directly make the corresponding reversible mask.
  • technologies such as ten-fold reduction projection and LELE, it can meet the needs of small batches of 14nm or even more advanced process nodes.
  • the manufacturing method may include:
  • Step S610 provide a substrate
  • Step S620 Form a photochromic layer on the substrate.
  • the substrate may be configured to be transparent to an exposure beam used for photolithography, wherein the exposure beam is in a first frequency band
  • the photochromic layer may include a photochromic material
  • the photochromic layer may be configured to have a spatial structure.
  • the corresponding mask pattern is produced under the irradiation of the modulated light beam, wherein the photochromic material is in a non-transmissive state or a light-transmitting state to the exposure beam based on whether it is irradiated by the modulated light in the modulated beam, and the modulated beam is in a state consistent with the first One frequency band separated by a second frequency band.
  • the photolithography method may include:
  • Step S710 irradiate the modulated light beam with a spatial structure onto the mask to generate a corresponding mask pattern in the mask;
  • Step S720 after the mask pattern is generated, the exposure beam is irradiated on the wafer/sample coated with photoresist through the mask to expose the sample;
  • Step S730 after completing the exposure of the wafer/sample, turn off the exposure beam.
  • Step S740 after turning off the exposure beam, turn off the modulation beam.
  • the modulated beam should be kept on during the entire exposure process to ensure the correctness of the mask pattern.
  • the light intensity of the modulated light beam may be greater than the light intensity of the exposure light beam.
  • the photolithography method may further include operating a temperature controller to maintain the temperature of the reticle within a preset temperature range.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

一种掩模版、光刻装置和掩模版的制造方法和基于掩模版的光刻方法，掩模版包括：基板(110)，基板(110)被配置为对用于光刻的曝光光束(920)透光，其中，曝光光束(920)处于第一频带中；以及光致变色层(120)，光致变色层(120)设于基板(110)的一侧上且包括光致变色材料，光致变色层被配置为在具有空间结构的调制光束(930)照射下产生对应的掩模版图案，其中，光致变色材料基于是否被调制光束(930)中的调制光照射到而处于对曝光光束的非透光状态或透光状态，且调制光束(930)处于与第一频带分隔开的第二频带中。

Description

掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法
相关申请的交叉引用
本申请要求于2022年4月11日提交的、标题为“掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法”的中国专利申请第202210373932.5的优先权，该申请的公开内容通过引用被全部合并于此。
技术领域
本公开一般地涉及光刻技术领域，更具体地，涉及一种掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法。
背景技术
在光刻技术中，通常使用掩模版来形成图案化的结构。然而，一旦掩模版被制成，其中的图案就不容易再被更改。并且，如果掩模版中存在缺陷或者在掩模版的使用过程中引入了缺陷，也难以再对这些缺陷进行修复。此外，掩模版通常还具有很高的成本。上述这些因素都会导致采用掩模版生产的芯片的成本升高、掩模版缺陷监控带来工艺的繁琐。因此，芯片生产技术存在对于新的掩模版的需求。
发明内容
本公开的目的在于提供一种掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法。
根据本公开的第一方面，提供了一种掩模版，所述掩模版包括：基板，所述基板被配置为对用于光刻的曝光光束透光，其中，曝光光束处于第一频带中；以及光致变色层，所述光致变色层设于所述基板的一侧上且包括光致变色材料，所述光致变色层被配置为在具有空间结构的调制光束照射下产生对应的掩模版图案，其中，所述光致变色材料基于是否被调制光束中的调制光照射到而处于对曝光光束的非透光状态或透光状态，且调制光束处于与第一频带分隔开的第二频带中。
在一些实施例中，所述基板包括石英和氟化钙中的至少一者。
在一些实施例中，所述光致变色材料被配置为当被调制光束中的调制光照射到 时，处于对曝光光束的非透光状态；并且所述光致变色材料被配置为当未被调制光束中的调制光照射到时，处于对曝光光束的透光状态。
在一些实施例中，所述光致变色材料被配置为当被调制光束中的调制光照射到时，处于对曝光光束的透光状态；并且所述光致变色材料被配置为当未被调制光束中的调制光照射到时，处于对曝光光束的非透光状态。
在一些实施例中，当所述光致变色材料处于透光状态时，对曝光光束的透光率为60％～99％。
在一些实施例中，当所述光致变色材料处于非透光状态时，对曝光光束的透光率为5％～30％。
在一些实施例中，所述第一频带所对应的波长包括193～405nm。
在一些实施例中，所述第一频带所对应的波长包括193nm、248nm、325nm、365nm和405nm中的至少一者。
在一些实施例中，所述第二频带所对应的波长包括500～580nm、或580～1100nm、或500～580nm的一部分或580～1100nm的一部分。
在一些实施例中，所述第二频带所对应的波长包括633nm。
在一些实施例中，所述光致变色层包括呈连续薄膜状的光致变色材料。
在一些实施例中，所述光致变色层的厚度为50～200nm或200～5000nm。
在一些实施例中，所述光致变色材料包括有机光致变色材料和无机光致变色材料中的至少一种。
在一些实施例中，所述光致变色材料包括1,2-二(5,5’-二甲基-2,2’-二苯硫基)全氟环戊-1-烯。
在一些实施例中，所述掩模版还包括：调制光源，所述调制光源被配置为产生具有空间结构的调制光束。
在一些实施例中，所述调制光源包括：第一光发生器，所述第一光发生器被配置为产生处于第二频带中的初始光束，所述初始光束具有在垂直于其行进方向的截面上的均匀的光强分布；以及空间光调制器，所述空间光调制器被配置为在控制信号的作用下将所述初始光束转化为具有空间结构的调制光束，其中，所述控制信号是根据掩 模版图案生成的。
在一些实施例中，调制光束为相对于所述光致变色层的近场光束。
在一些实施例中，所述掩模版还包括：温控器，所述温控器包括温度保持单元，所述温度保持单元被配置为邻近于所述基板或所述光致变色层设置，以保持所述掩模版的温度处于预设温度范围内。
根据本公开的第二方面，提出了一种光刻装置，所述光刻装置包括：如上所述的掩模版；以及控制模块，所述控制模块被配置为根据设计版图产生控制信号，所述控制信号用于产生具有与设计版图对应的空间结构的调制光束。
在一些实施例中，所述光刻装置还包括：调制光源，所述调制光源被配置为产生具有空间结构的调制光束。
在一些实施例中，所述调制光源包括：第一光发生器，所述第一光发生器被配置为产生处于第二频带中的初始光束，所述初始光束具有在垂直于其行进方向的截面上的均匀的光强分布；以及空间光调制器，所述空间光调制器被配置为在控制信号的作用下将所述初始光束转化为具有空间结构的调制光束，其中，所述控制信号是根据掩模版图案生成的。
在一些实施例中，所述光刻装置还包括：温控器，所述温控器包括温度保持单元，所述温度保持单元被配置为邻近于所述基板或所述光致变色层设置，以保持所述掩模版的温度处于预设温度范围内。
在一些实施例中，所述光刻装置还包括：第二光发生器，所述第二光发生器被配置为产生处于第一频带中的曝光光束。
在一些实施例中，所述曝光光束具有在垂直于其行进方向的截面上的均匀的光强分布。
根据本公开的第三方面，提出了一种掩模版的制造方法，所述制造方法包括：提供基板，所述基板被配置为对用于光刻的曝光光束透光，其中，曝光光束处于第一频带中；以及在所述基板的一侧上形成光致变色层，所述光致变色层包括光致变色材料，所述光致变色层被配置为在具有空间结构的调制光束照射下产生对应的掩模版图案，其中，所述光致变色材料基于是否被调制光束中的调制光照射到而处于对曝光光束的非透光状态或透光状态，且调制光束处于与第一频带分隔开的第二频带中。
根据本公开的第四方面，提出了一种基于掩模版的光刻方法，所述掩模版为如上所述的掩模版，所述光刻方法包括：将具有空间结构的调制光束照射到所述掩模版上，以在所述掩模版中产生对应的掩模版图案；在产生掩模版图案之后，使曝光光束经由所述掩模版照射在晶圆上，以对所述晶圆进行曝光；在完成对所述晶圆的曝光之后，关闭曝光光束；以及在关闭曝光光束之后，关闭调制光束。
在一些实施例中，调制光束的光强大于曝光光束的光强。
在一些实施例中，所述光刻方法还包括：运行温控器以保持所述掩模版的温度处于预设温度范围内。
附图说明
构成说明书的一部分的附图描述了本公开的实施例，并且连同说明书一起用于解释本公开的原理。
参照附图，根据下面的详细描述，可以更加清楚地理解本公开，其中：
图1是根据本公开的一示例性实施例的掩模版的结构示意图；
图2是根据本公开的一示例性实施例的被曝光光束和调制光束照射的掩模版的示意图；
图3是根据本公开的一示例性实施例的被曝光光束和调制光束照射的掩模版的截面示意图；
图4是根据本公开的一示例性实施例的光刻装置的结构示意图；
图5是根据本公开的一示例性实施例的掩模版的制造方法的流程示意图；
图6是根据本公开的一示例性实施例的基于掩模版的光刻方法的流程示意图。
具体实施方式
以下将参照附图描述本公开，其中的附图示出了本公开的若干实施例。然而应当理解的是，本公开可以以多种不同的方式呈现出来，并不局限于下文描述的实施例；事实上，下文描述的实施例旨在使本公开的公开更为完整，并向本领域技术人员充分说明本公开的保护范围。还应当理解的是，本文公开的实施例能够以各种方式进行组合，从而提供更多额外的实施例。
应当理解的是，在所有附图中，相同的附图标记表示相同的元件。在附图中，为 清楚起见，某些特征的尺寸可以进行变形。
应当理解的是，说明书中的用辞仅用于描述特定的实施例，并不旨在限定本公开。说明书使用的所有术语(包括技术术语和科学术语)除非另外定义，均具有本领域技术人员通常理解的含义。为简明和/或清楚起见，公知的功能或结构可以不再详细说明。
说明书使用的用辞“包括”、“包含”和“含有”表示存在所声称的特征，但并不排斥存在一个或多个其它特征。说明书使用的用辞“和/或”包括相关列出项中的一个或多个的任意和全部组合。说明书使用的用辞“在X和Y之间”和“在大约X和Y之间”应当解释为包括X和Y。本说明书使用的用辞“在大约X和Y之间”的意思是“在大约X和大约Y之间”，并且本说明书使用的用辞“从大约X至Y”的意思是“从大约X至大约Y”。
在说明书中，称一个元件位于另一元件“上”、“附接”至另一元件、“连接”至另一元件、“耦合”至另一元件、或“接触”另一元件等时，该元件可以直接位于另一元件上、附接至另一元件、连接至另一元件、联接至另一元件或接触另一元件，或者可以存在中间元件。相对照的是，称一个元件“直接”位于另一元件“上”、“直接附接”至另一元件、“直接连接”至另一元件、“直接耦合”至另一元件或、或“直接接触”另一元件时，将不存在中间元件。在说明书中，一个特征布置成与另一特征“相邻”，可以指一个特征具有与相邻特征重叠的部分或者位于相邻特征上方或下方的部分。
在说明书中，诸如“上”、“下”、“左”、“右”、“前”、“后”、“高”、“低”等的空间关系用辞可以说明一个特征与另一特征在附图中的关系。应当理解的是，空间关系用辞除了包含附图所示的方位之外，还包含装置在使用或操作中的不同方位。例如，在附图中的装置倒转时，原先描述为在其它特征“下方”的特征，此时可以描述为在其它特征的“上方”。装置还可以以其它方式定向(旋转90度或在其它方位)，此时将相应地解释相对空间关系。
在微纳米器件的研究以及半导体芯片的生产工艺中，通常使用基于掩模版的光刻技术来形成期望的器件或芯片结构。为了形成期望的结构，可以根据所要加工的器件或芯片的版图、按照相应的工艺步骤来预先制造一个或多个掩模版，每个掩模版上的图案可以对应于版图中的一个图层或者对应于能够在同一步骤中制备的多个图层。通常，掩模版可以包括能够使用于让抗刻蚀剂(光刻胶)的性质发生改变的曝光光束(例如，紫外光束等)透过的基板(例如，石英玻璃)和沉积在基板上的、用来阻止上述 曝光光束透过的镀膜(例如，金属铬膜)。
在一种制造掩模版的方法中，可以在石英玻璃上依次沉积数十纳米厚的铬膜和位于铬膜上的抗刻蚀剂，然后采用激光直写或电子束曝光的方式在抗刻蚀剂上形成所需的图案，之后湿法刻蚀或干法刻蚀从抗刻蚀剂中暴露出的铬，以在铬膜上形成与期望的结构对应的图案。其中，激光直写的方式通常用于形成最小线宽在300nm以上的掩模版，而电子束曝光的方式可以用来形成最小线宽小于300nm的掩模版。
采用上述制备方式，单张掩模版的成本大约在数万美元，而用于完整的器件或芯片生产工艺的整套掩模版的成本可能高达数百万美元。并且，这样的掩模版一旦被制成，其结构就很难再被更改。在传统的应用场景中，包括中央处理器(CPU)、动态随机存取存储器(DRAM)、闪存等芯片的单批次批量通常在数百万甚至上亿的量级，因此可以很好地分摊制造掩模版的成本，从而使得基于掩模版的光刻工艺能够广泛地应用在这些器件或芯片的制造生产中。然而，随着物联网、人工智能、个性化生命健康等产业的发展，目前越来越多地涉及小批量器件或芯片的生产，这些器件或芯片的数量可能只有几万个或甚至更少。如果预先制备掩模版、再基于掩模版来生产这些器件或芯片，很难通过足够的器件或芯片数量来分摊制造掩模版的成本，导致器件或芯片成本的大幅升高。另外，如果采用激光直写的方式来直接制造这些器件或芯片，一方面其产率很低，难以满足量产的需求，另一方面激光直写的大约300nm的最小线宽也限制了通过缩微器件的方式来提高芯片的集成度、性能和降低芯片的成本。类似地，如果采用电子束曝光的方式来直接制造这些器件或芯片，虽然可以制造出更小尺寸和更高集成度的器件或芯片，但其产率依然极低，难以满足生产要求，且工艺成本也很高，阻碍了器件和芯片的市场渗透。
此外，掩模版中存在的缺陷也可能导致生产器件或芯片的成本的大幅增加。具体而言，如果掩模版中存在小的缺陷，则需要花费时间来进行缺陷的探测和修复；而如果掩模版中存在大的缺陷，则可能不得不废弃整张掩模版。
为了解决上述问题，满足小批量芯片的生产和相关产品向高集成度发展的需求，使得未来物联网、人工智能等技术能够具有更好的社会渗透度，本公开提出了一种可编程、可擦写以重复使用的数字化光刻掩模版。在这样的掩模版中，可以通过控制具有空间结构的调制光束照射到具有光致变色材料的掩模版上来可逆地改变掩模版中的相应的像素区域的透光状态，使得同一块掩模版上的图案可以根据需要改变，从而实现掩模版的重复利用，进而降低器件或芯片的生产成本。
在本公开的一示例性实施例中，如图1所示，掩模版可以包括基板110和光致变色层120。
其中，基板110可以被配置为对用于光刻的曝光光束透光，以避免对光刻过程造成干扰。曝光光束可以处于第一频带中，通常对应于部分紫外光所处的频带。例如，第一频带所对应的波长可以包括193～405nm。在一些具体示例中，第一频带所对应的波长可以包括193nm、248nm、325nm、365nm和405nm中的至少一者。基板110可以由具有一定结构强度的材料制成，用于支撑设置在其上的掩模版的其它各层。在一些实施例中，基板110可以由石英玻璃或氟化钙玻璃等制成。
光致变色层120可以设于基板110的一侧上，且光致变色层120可以包括光致变色材料，并在具有空间结构的调制光束的照射下产生对应的掩模版图案。如图2和图3所示，具有空间结构的调制光束930具体是指在垂直于其行进方向的截面上具有非均匀的强度分布的光束。例如，在垂直于调制光束930的行进方向的截面上，部分区域的调制光强度可以为零，而其它区域可以具有非零的调制光强度。光致变色材料将基于是否被调制光束中的调制光照射到而处于对曝光光束的非透光状态或透光状态，相应地形成掩模版中的非透光区域和透光区域，进而产生期望的掩模版图案。
在一具体示例中，当光致变色材料与调制光束930的截面上的具有非零调制光强度的区域相对时，即光致变色材料被调制光束930中的调制光照射到时，这部分光致变色材料将吸收调制光而处于对曝光光束的非透光状态(例如，有机光致变色材料吸收作为退激发光的调制光而产生对作为曝光光束的紫外光的高吸收率，导致这部分有机光致变色材料处于对曝光光束的非透光状态)，对应于图3中所示的光致变色材料的对曝光光束920的非透光区域122；并且，当光致变色材料与调制光束930的截面上的调制光强度为零的区域相对时，即光致变色材料未被调制光束930中的调制光照射到时，这部分光致变色材料将处于对曝光光束的透光状态，对应于图3中所示的光致变色材料的对曝光光束920的透光区域121。因此，可以通过控制调制光束的强度空间分布，或者说通过控制调制光束的空间结构，在光致变色层120中形成针对曝光光束920的透光区域121和非透光区域122，这些区域的组合可以形成在掩模版中的期望的掩模版图案。
当然，可以理解的是，在其它一些具体示例中，当光致变色材料与调制光束的截面上的具有非零调制光强度的区域相对时，即光致变色材料被调制光束中的调制光照 射到时，这部分光致变色材料也可以处于对曝光光束的透光状态；而当光致变色材料与调制光束的截面上的调制光强度为零的区域相对时，即光致变色材料未被调制光束中的调制光照射到时，这部分光致变色材料可以处于对曝光光束的非透光状态。
此外，在通常情况下，只有在调制光照射在光致变色材料上时，其非透光状态(或透光状态)才可以被保持，而一旦移除了调制光，光致变色材料将恢复至其默认状态。因此，在利用包括这样的光致变色材料的掩模版进行光刻时，需要在采用曝光光束对晶圆/样品进行曝光的同时保持调制光束也照射在掩模版上，以维持掩模版中的透光区域和非透光区域不变，或者说保持掩模版图案不变，直至完成光刻。由于上述需求，需要避免调制光束930对曝光过程的干扰，即调制光束930不能使抗刻蚀剂(例如，光刻胶)的性质发生变化，这就要求调制光束930处于与曝光光束920的第一频带分隔开的第二频带内。在这里，分隔开的第一频带和第二频带是指第一频带中的任何频率都不同于第二频带中的任何频率。在一些实施例中，第二频带所对应的波长可以包括500～580nm、或580～1100nm、或500～580nm的一部分或580～1100nm的一部分。在一具体示例中，第二频带所对应的波长可以为633nm。
为了保证掩模版中的光致变色材料在处于透光状态时，能够使足够的曝光光束通过以用于对样品进行曝光，而在处于非透光状态时，足以阻挡曝光光束以避免对晶圆/样品的曝光，光致变色材料在透光状态和非透光状态下的透光率应当满足一定的要求。在一具体示例中，当光致变色材料处于透光状态时，其对曝光光束的透光率可以为60％～99％；而当光致变色材料处于非透光状态时，其对曝光光束的透光率可以为5％～30％。
在一些实施例中，光致变色材料可以包括有机光致变色材料和无机光致变色材料中的至少一种。常见的有机光致变色材料可以包括呈液体状态的并四苯(tetracene)溶液、苄基苯肼(benzalphenylhydrazines)溶液、恶唑酮(osazones)溶液等，以及呈固体状态的2,3,4,4-四氯萘-1-(4H)-one(2,3,4,4-tetrachloronaphthalen-1-(4H)-one)、螺萘恶嗪(spironaphthoxazines)类有机材料、二芳基乙烯(diarylethene)类材料、偶氮苯(azobenzene)衍生物、1,2-二(5,5’-二甲基-2,2’-二苯硫基)全氟环戊-1-烯(1,2-bis(5,5‘-dimethyl-2,2‘-bithiophen-yl)perfluorocyclopent-1-ene)等，而无机光致变色材料可以包括多种过渡金属氧化物及其复合材料，例如氧化钨(WO x)、三氧化钼(MoO 3)、五氧化二钒(V 2O 5)、二氧化钛(TiO 2)等。
然而，考虑到在目前通常情况下的光刻应用中，能够使用的光致变色材料应当至少具有以下性质：(1)光致变色材料的透光状态与非透光状态可以在调制光束的控制下可逆地转换，以实现可擦写、可重复使用的掩模版，即在未被调制光束中的调制光照射到的情况下，光致变色材料对处于第一频带中的曝光光束具有足够高的透光率，且在被调制光束中的调制光照射到的情况下，其对处于第一频带中的曝光光束具有足够低的透光率，或者在未被调制光束中的调制光照射到的情况下，其对处于第一频带中的曝光光束具有足够低的透光率，且在被调制光束中的调制光照射到的情况下，其对处于第一频带中的曝光光束具有足够高的透光率；以及(2)用于可逆地切换光致变色材料的透光状态与非透光状态的调制光束所处的第二频带与曝光光束(紫外光)所处的第一频带分隔开，以避免对光刻过程造成干扰。基于上述考虑，在现有的利用紫外光作为曝光光束进行光刻的工艺中，可以采用1,2-二(5,5’-二甲基-2,2’-二苯硫基)全氟环戊-1-烯(1,2-bis(5,5‘-dimethyl-2,2‘-bithiophen-yl)perfluorocyclopent-1-ene)作为掩模版中的光致变色材料。然而，可以理解的是，当利用处于其它频带中的曝光光束或调制光束时，也可以选择与相应的频带对应的其它光致变色材料，在此不作限制。进一步地，可以选择具有较好的散热性和所需的调制光束强度较低的光致变色材料，以减少由于调制光束的照射所导致的掩模版温度的大幅上升，从而改善光刻的可靠性。
在通常情况下，光致变色层120可以包括呈连续薄膜状的光致变色材料，以便于通过层压、旋涂、喷射等沉积方式来进行掩模版的制备。为了使光致变色材料在处于非透光状态下时能够有效地阻挡曝光光束，光致变色层120的厚度可以在50～200nm或200～5000nm。在其它一些情况下，也可以根据需要形成图案化的光致变色层，并利用激光直写、电子束直写、基于另一掩模版的光刻等方式来形成上述图案化的光致变色层。或者，在另一些情况下，也可以根据需要采用呈液体状态的光致变色材料，此时在光致变色层120上方可以再设置一阻挡层，使液体的光致变色材料被限制在基板110和阻挡层之间，以保持掩模版的结构的稳定性质，从而保证曝光效果。
在一些实施例中，如图4所示，还可以包括调制光源200，该调制光源200可以被视为掩模版的一部分，或者可以独立于掩模版设置在包含掩模版的光刻装置中。调制光源200可以被配置为产生具有空间结构的调制光束。具体而言，调制光源200可以包括第一光发生器210和空间光调制器220，其中第一光发生器210可以被配置为 产生处于第二频带中的初始光束，该初始光束具有在垂直于其行进方向的截面上的均匀的光强分布；而空间光调制器220可以被配置为在控制信号的作用下将初始光束转化为具有空间结构的调制光束，其中，控制信号可以是根据掩模版图案生成的。调制光束的空间结构与期望的掩模版图案相对应，以通过将调制光束照射到掩模版中的光致变色材料上形成对应的透光区域和非透光区域。在一具体示例中，空间光调制器可以为光相位调制器。
在一具体示例中，空间光调制器可以实现数目为4160x2464的像素以及3.74μm的像素周期。采用这样的空间光调制器，利用波长为633nm的调制光束可以在掩模版上形成由尺寸为3～4μm的微小光斑构成的、周期为6～8μm的图案。使用这样的掩模版并结合四倍(4x)缩小投影光刻技术，可以加工出的最小线宽在1μm左右，且单次曝光的面积为1x1cm 2。在投影曝光的情况下，按照单次曝光所需的时间为100ms计算，这种掩模版的光刻产率可以达到600cm 2/min。对于1μm的曝光精度而言，上述产率为激光直写的产率的100倍，因此能够满足下一代印刷电路板和芯片封装等的光刻需求。此外，在调制光束的波长为633nm的情况下，其所能产生的具有最小分辨率的图案在400nm左右，结合四倍缩小投影光刻技术并利用248nm的曝光光束，能够实现约100nm的光刻线宽，这可以满足芯片的很多后道工艺的光刻需求。如果期望进一步提高掩模版的线宽精度同时提高产率，还可以开发10000x10000或更多像素的空间光调制器。另外，虽然本公开的掩模版可能受到调制光束的衍射效应的限制，掩模版上的最小线宽通常在400nm左右，但结合更高倍率的缩小投影光刻，如十倍(10x)缩小投影光刻技术等，并利用例如193nm的深紫外(DUV)曝光光束进行曝光，可以将光刻的最小线宽进一步改进到45nm以下，以满足先进芯片的生产需求。
此外，在光刻过程中，为了提高光刻精度，改善光刻图案的精确性，由第二光发生器300产生的曝光光束可以是相对于掩模版的近场光束。类似地，由调制光源200产生的调制光束也可以为相对于掩模版中的光致变色层的近场光束，以避免远场光束光学衍射效应所造成的对精度的影响，改善掩模版图案的准确性。
在一些实施例中，考虑到用于控制光致变色材料的透光状态或非透光状态的调制光束通常具有较大的光功率，为了避免过强的光照射在掩模版及样品上导致掩模版或样品温度的升高，如图4所示，还可以包括温控器400。该温控器400可以被视为包括在掩模版中或者独立于掩模版设置在包含掩模版的光刻装置中。温控器400可以包 括温度保持单元，该温度保持单元可以被配置为邻近于基板110或光致变色层120设置，以保持掩模版的温度处于预设温度范围内。该温控器可以是液冷温控器、热电半导体温控器等，在此不作限制。在一般情况下，在曝光过程中所需的曝光光束的光强通常为10～10000mW/cm 2，而用于改变光致变色材料的透光状态的调制光束的光强通常需要在10～10000W/cm 2的范围内。例如，在光刻过程中，波长为633nm的调制光束的光强可能为波长为325nm的曝光光束的光强的1000倍以上。通过使用温控器400来保持掩模版处于预设温度范围内，可以避免掩模版在较强的调制光束的作用下被损坏，甚至可以实现采用更高强度(例如100kW/cm 2)的调制光束来对掩模版中的光致变色材料进行激发，以快速地改变光致变色材料的透光状态并获得期望的、尽可能理想的透光率。
在本公开的掩模版中，利用其中的光致变色材料来控制各个像素区域的透光状态的可逆变化。这样，可以基于所需的器件或芯片结构的数据文件直接形成相应的掩模版图案，且同一掩模版上的掩模版图案可以擦写，实现了掩模版的可重复使用，提高了掩模版的使用效率，降低了器件或芯片的制造成本，避免了在传统的光刻中掩模版成本过高所导致的一系列问题。
在本公开的一示例性实施例中，还提出了一种光刻装置。如图4所示，该光刻装置可以包括如上所述的掩模版的板体100和控制模块500。在一些实施例中，光刻装置还可以包括如上所述的调制光源200、被配置为产生处于第一频带中的曝光光束(该曝光光束通常具有在垂直于其行进方向的截面上的均匀的光强分布，或至少在截面的中心区域内的均匀的光强分布)的第二光发生器300和如上所述的温控器400中的至少一者。其中，控制模块500可以被配置为根据版图产生控制信号，该控制信号用于产生具有与版图对应的空间结构的调制光束。具体而言，控制模块500可以用于产生与器件或芯片的版图中的一个或多个图层对应的多个掩模版图案、并根据各个掩模版图案产生相应的控制信号。进一步地，控制模块500可以将控制信号传输给空间光调制器220，以使得空间光调制器220根据控制信号改变掩模版中各个像素区域的透光状态。
在本公开实施例的光刻装置中，可以利用需要曝光的图案的数据文件直接制成相应的可逆掩模版，结合十倍缩小投影和LELE等技术，可以满足14nm甚至更先进工 艺节点的小批量芯片的生产需求。通过可重复使用、可擦写的仅一块或少数几块掩模版，能够高效且准确地完成复杂的器件或芯片的制造，降低了器件或芯片的制造成本，有利于器件或芯片的快速更新、批量生产和更好地渗透市场。
在本公开的一示例性实施例中，还提出了一种掩模版的制造方法，如图5所示，该制造方法可以包括：
步骤S610，提供基板；
步骤S620，在基板上形成光致变色层。
其中，基板可以被配置为对用于光刻的曝光光束透光，其中，曝光光束处于第一频带中，光致变色层可以包括光致变色材料，光致变色层被配置为在具有空间结构的调制光束照射下产生对应的掩模版图案，其中，光致变色材料基于是否被调制光束中的调制光照射到而处于对曝光光束的非透光状态或透光状态，且调制光束处于与第一频带分隔开的第二频带中。
在本公开的一示例性实施例中，还提出了一种基于如上文所述的掩模版的光刻方法，如图6所示，该光刻方法可以包括：
步骤S710，将具有空间结构的调制光束照射到所述掩模版上，以在掩模版中产生对应的掩模版图案；
步骤S720，在产生掩模版图案之后，使曝光光束经由掩模版照射在涂覆光刻胶的晶圆/样品上，以对样品进行曝光；
步骤S730，在完成对晶圆/样品的曝光之后，关闭曝光光束；以及
步骤S740，在关闭曝光光束之后，关闭调制光束。
也就是说，在整个曝光过程中，应保持调制光束处于打开状态，以保证掩模版图案的正确性。其中，调制光束的光强可以大于曝光光束的光强。相应地，光刻方法还可以包括运行温控器以保持所述掩模版的温度处于预设温度范围内。
虽然已经描述了本公开的示例性实施例，但是本领域技术人员应当理解的是，在本质上不脱离本公开的精神和范围的情况下能够对本公开的示范实施例进行多种变化和改变。因此，所有变化和改变均包含在权利要求所限定的本公开的保护范围内。本公开由附加的权利要求限定，并且这些权利要求的等同也包含在内。

Claims (29)

  1. 一种掩模版，包括：
    基板，所述基板被配置为对用于光刻的曝光光束透光，其中，曝光光束处于第一频带中；以及
    光致变色层，所述光致变色层设于所述基板的一侧上且包括光致变色材料，所述光致变色层被配置为在具有空间结构的调制光束照射下产生对应的掩模版图案，其中，所述光致变色材料基于是否被调制光束中的调制光照射到而处于对曝光光束的非透光状态或透光状态，且调制光束处于与第一频带分隔开的第二频带中。
  2. 根据权利要求1所述的掩模版，其中，所述基板包括石英和氟化钙中的至少一者。
  3. 根据权利要求1所述的掩模版，其中，所述光致变色材料被配置为当被调制光束中的调制光照射到时，处于对曝光光束的非透光状态；并且
    所述光致变色材料被配置为当未被调制光束中的调制光照射到时，处于对曝光光束的透光状态。
  4. 根据权利要求1所述的掩模版，其中，所述光致变色材料被配置为当被调制光束中的调制光照射到时，处于对曝光光束的透光状态；并且
    所述光致变色材料被配置为当未被调制光束中的调制光照射到时，处于对曝光光束的非透光状态。
  5. 根据权利要求1所述的掩模版，其中，当所述光致变色材料处于透光状态时，对曝光光束的透光率为60％～99％。
  6. 根据权利要求1所述的掩模版，其中，当所述光致变色材料处于非透光状态时， 对曝光光束的透光率为5％～30％。
  7. 根据权利要求1所述的掩模版，其中，所述第一频带所对应的波长包括193～405nm。
  8. 根据权利要求1所述的掩模版，其中，所述第一频带所对应的波长包括193nm、248nm、325nm、365nm和405nm中的至少一者。
  9. 根据权利要求1所述的掩模版，其中，所述第二频带所对应的波长包括500～580nm、或580～1100nm、或500～580nm的一部分或580～1100nm的一部分。
  10. 根据权利要求1所述的掩模版，其中，所述第二频带所对应的波长包括633nm。
  11. 根据权利要求1所述的掩模版，其中，所述光致变色层包括呈连续薄膜状的光致变色材料。
  12. 根据权利要求1所述的掩模版，其中，所述光致变色层的厚度为50～200nm或200～5000nm。
  13. 根据权利要求1所述的掩模版，其中，所述光致变色材料包括有机光致变色材料和无机光致变色材料中的至少一种。
  14. 根据权利要求1所述的掩模版，其中，所述光致变色材料包括1,2-二(5,5’-二甲基-2,2’-二苯硫基)全氟环戊-1-烯。
  15. 根据权利要求1所述的掩模版，其中，所述掩模版还包括：
    调制光源，所述调制光源被配置为产生具有空间结构的调制光束。
  16. 根据权利要求15所述的掩模版，其中，所述调制光源包括：
    第一光发生器，所述第一光发生器被配置为产生处于第二频带中的初始光束，所述初始光束具有在垂直于其行进方向的截面上的均匀的光强分布；以及
    空间光调制器，所述空间光调制器被配置为在控制信号的作用下将所述初始光束转化为具有空间结构的调制光束，其中，所述控制信号是根据掩模版图案生成的。
  17. 根据权利要求1所述的掩模版，其中，调制光束为相对于所述光致变色层的近场光束。
  18. 根据权利要求1所述的掩模版，还包括：
    温控器，所述温控器包括温度保持单元，所述温度保持单元被配置为邻近于所述基板或所述光致变色层设置，以保持所述掩模版的温度处于预设温度范围内。
  19. 一种光刻装置，包括：
    根据权利要求1至14中任一项所述的掩模版；以及
    控制模块，所述控制模块被配置为根据版图产生控制信号，所述控制信号用于产生具有与版图对应的空间结构的调制光束。
  20. 根据权利要求19所述的光刻装置，还包括：
    调制光源，所述调制光源被配置为产生具有空间结构的调制光束。
  21. 根据权利要求20所述的光刻装置，其中，所述调制光源包括：
    第一光发生器，所述第一光发生器被配置为产生处于第二频带中的初始光束，所述初始光束具有在垂直于其行进方向的截面上的均匀的光强分布；以及
    空间光调制器，所述空间光调制器被配置为在控制信号的作用下将所述初始光束转化为具有空间结构的调制光束，其中，所述控制信号是根据掩模版图案生成的。
  22. 根据权利要求19所述的光刻装置，还包括：
    温控器，所述温控器包括温度保持单元，所述温度保持单元被配置为邻近于所述基板或所述光致变色层设置，以保持所述掩模版的温度处于预设温度范围内。
  23. 根据权利要求19所述的光刻装置，还包括：
    第二光发生器，所述第二光发生器被配置为产生处于第一频带中的曝光光束。
  24. 根据权利要求23所述的光刻装置，其中，所述曝光光束具有在垂直于其行进方向的截面上的均匀的光强分布。
  25. 一种光刻装置，包括：
    根据权利要求15至18中任一项所述的掩模版；以及
    控制模块，所述控制模块被配置为根据版图产生控制信号，所述控制信号用于产生具有与版图对应的空间结构的调制光束。
  26. 一种掩模版的制造方法，包括：
    提供基板，所述基板被配置为对用于光刻的曝光光束透光，其中，曝光光束处于第一频带中；以及
    在所述基板的一侧上形成光致变色层，所述光致变色层包括光致变色材料，所述光致变色层被配置为在具有空间结构的调制光束照射下产生对应的掩模版图案，其中，所述光致变色材料基于是否被调制光束中的调制光照射到而处于对曝光光束的非 透光状态或透光状态，且调制光束处于与第一频带分隔开的第二频带中。
  27. 一种基于掩模版的光刻方法，其中，所述掩模版为根据权利要求1至18中任一项所述的掩模版，所述光刻方法包括：
    将具有空间结构的调制光束照射到所述掩模版上，以在所述掩模版中产生对应的掩模版图案；
    在产生掩模版图案之后，使曝光光束经由所述掩模版照射在样品上，以对所述样品进行曝光；
    在完成对所述样品的曝光之后，关闭曝光光束；以及
    在关闭曝光光束之后，关闭调制光束。
  28. 根据权利要求27所述的光刻方法，其中，调制光束的光强大于曝光光束的光强。
  29. 根据权利要求27所述的光刻方法，其中，所述光刻方法还包括：
    运行温控器以保持所述掩模版的温度处于预设温度范围内。
PCT/CN2022/126146 2022-04-11 2022-10-19 掩模版、光刻装置、掩模版的制造方法和基于掩模版的光刻方法 WO2023197553A1 (zh)

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