WO2023197099A1 - Particle corrector and particle system - Google Patents

Particle corrector and particle system Download PDF

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Publication number
WO2023197099A1
WO2023197099A1 PCT/CN2022/086035 CN2022086035W WO2023197099A1 WO 2023197099 A1 WO2023197099 A1 WO 2023197099A1 CN 2022086035 W CN2022086035 W CN 2022086035W WO 2023197099 A1 WO2023197099 A1 WO 2023197099A1
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WO
WIPO (PCT)
Prior art keywords
particle
beam splitting
hole
plate
holes
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PCT/CN2022/086035
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French (fr)
Chinese (zh)
Inventor
马泽
贺佳坤
张文
赵冲
张超
Original Assignee
华为技术有限公司
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Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to PCT/CN2022/086035 priority Critical patent/WO2023197099A1/en
Publication of WO2023197099A1 publication Critical patent/WO2023197099A1/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147Arrangements for directing or deflecting the discharge along a desired path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation

Definitions

  • the present application relates to the field of particle technology, and in particular to a particle straightener and a particle system.
  • the particles used (such as electrons, ions, etc.) have shorter wavelengths, when the particle system is applied to fields such as microscopy imaging, it can provide better resolution than traditional optical systems.
  • the particle system can also be used in semiconductor process defect detection, mask inspection, electron beam exposure and other fields, and has good accuracy and resolution.
  • the particle beam needs to be corrected by a particle corrector to improve the quality of the particle beam.
  • the current particle corrector still has many shortcomings. For example, when the inclination angle of the particle beam changes at different locations, the current particle corrector cannot independently adjust the electric field at a certain location. Therefore, it cannot make targeted adjustments to the particle beam whose inclination angle changes, which has certain limitations. sex.
  • This application provides a particle straightener and a particle system that are beneficial to improving the particle beam current and ensuring the quality of the particle beam.
  • the present application provides a particle straightener, including: a first beam splitting plate and a straightening plate assembly.
  • the first beam splitting plate has M beam splitting holes.
  • the correction plate assembly includes N stacked correction plates.
  • Each correction plate has M through holes and M electrode assemblies.
  • the M beam splitting holes are arranged in one-to-one correspondence with the M through holes, and the M electrode assemblies are arranged in The through holes are arranged in one-to-one correspondence, and each electrode assembly is used to generate an electric field in the corresponding through hole for correcting the particle beam.
  • M and N are integers greater than or equal to 1.
  • the particle beam generated by the particle source can be separated into multiple independent particle beams.
  • the system throughput can be improved without sacrificing system resolution.
  • the beam current of the particle beam generated by the particle source can be increased. Since the particle beam generated by the particle source is divided into multiple independent particle beams, in each particle beam, the Coulomb repulsion between charged particles is small, making it less likely to cause beam spot expansion, etc. Therefore, it can Ensure system resolution.
  • the particle corrector may also include a control circuit electrically connected to the M electrode assemblies for separately controlling the power supply of the M electrode assemblies to control the electric field formed in each through hole. Strength and direction. Since the control circuit can control the power supply of each electrode assembly separately, the intensity and direction of the electric field formed in each through hole can be differentially controlled, and at the same time, it can also increase the flexibility and application range of the particle straightener. . For example, when the inclination angle of a certain particle beam changes, the control circuit can control the power supply of the electrode assembly to adaptively correct the particle beam after the inclination angle changes by changing the intensity or direction of the electric field.
  • the first beam splitting plate may be disposed at the front end of the correcting plate assembly, or may be disposed at the rear end of the correcting plate assembly.
  • the first beam splitting plate can effectively separate the initial particle beam generated by the particle source.
  • the correcting plate assembly can then separate the inclination, position and angle of each particle beam. Adjust parameters such as astigmatism.
  • the correction plate assembly can effectively separate the initial particle beam generated by the particle source and adjust the inclination, position, astigmatism and other parameters of each particle beam.
  • the first beam splitter can filter the corrected particle beam to ensure the quality of the final particle beam.
  • beam splitting plates can also be provided at both the front and rear ends of the correction plate assembly.
  • a first beam splitting plate can be provided at the front end of the correcting plate assembly, so that the initial particle beam can be divided into M particle beams.
  • the second beam splitting plate can perform filtering and other processing on the particle beam corrected by the correction plate assembly to improve the quality of the final particle beam.
  • the structures of the first beam splitting plate and the second beam splitting plate may be exactly the same or different.
  • the relative relationships between the beam splitting holes in the first beam splitting plate, the through holes in the correction plate assembly, and the beam splitting holes in the second beam splitting plate may be diverse.
  • the beam splitting holes in the first beam splitting plate and the beam splitting holes in the second beam splitting plate have the same cross-sectional size, and the two beam splitting holes are coaxially arranged.
  • the cross section of the beam splitting hole in the first beam splitting plate may be larger than the cross section of the beam splitting hole in the second beam splitting plate.
  • the first beam splitting plate is used to separate the initial particle beam.
  • the second beam splitter is used to filter the particle beam to filter out the part of the particle beam that is too close to the electrode, thereby effectively ensuring the quality of the particle beam.
  • the fill factor of particle correctors can be increased.
  • the fill factor refers to the ratio of the particle beam movement range to the diameter of the through hole.
  • the beam-splitting holes in the first beam-splitting plate and the beam-splitting holes in the second beam-splitting plate may also be disposed asynchronously.
  • the beam splitting hole may be shifted by a certain distance to the irradiation direction of the particle beam (the opposite direction of the oblique direction).
  • the particle beam passes through the beam splitting hole of the first beam splitting plate, it will have a certain offset during its downward propagation due to its certain inclination angle. Since the closer to the electrode, the uniformity of the electric field becomes worse, causing problems such as aberration of the particle beam. Therefore, after the beam splitting hole of the first beam splitting plate is offset by a certain distance toward the irradiation direction of the particle beam, the lateral offset distance of the particle beam in the through hole can be increased to reduce the adverse impact of the electrode on the particle beam. In addition, the fill factor of particle correctors can be increased.
  • the cross-sectional sizes of the beam splitting holes of the first beam splitting plate and the beam splitting holes of the second beam splitting plate can be adaptively adjusted according to different needs.
  • the beam-splitting hole in the first beam-splitting plate and the through-hole in the correction plate assembly may be arranged coaxially or non-axially.
  • the beam-splitting hole in the second beam-splitting plate and the through-hole in the correction plate assembly can be arranged coaxially or non-axially. No limitation is made here.
  • each electrode assembly multiple electrodes may be included, so that a more uniform and more directional electric field may be generated within the corresponding through hole.
  • multiple electrodes can be evenly distributed along the central axis of the through hole, or the position of each electrode can be adaptively adjusted according to different needs. It can be understood that during specific arrangement, the electrode is not limited to being arranged on the inner wall of the through hole, but can also be arranged at other positions near the through hole; that is, it only needs to ensure that the electrode assembly can generate an electric field in the corresponding through hole.
  • control circuit can independently control the power supply of each electrode, so that parameters such as the direction and intensity of the electric field in each through hole can be accurately controlled. That is, through multiple electrodes and control circuits, an electric field in any direction can be generated in a direction perpendicular to the axis of the through hole (or it can also be understood that the direction of the electric field can rotate 360° in a plane perpendicular to the axis of the through hole), so , which can deflect and position the particle beam in any direction.
  • the cross section of the electrode in the direction perpendicular to the axis of the through hole, may be square, rectangular, arcuate or trapezoidal.
  • the shape, structure and arrangement position of the electrodes are not limited in this application.
  • this application also provides a particle system. Includes: particle source, collimating lens and particle corrector.
  • the particle source is used to generate the initial particle beam; the collimating lens is used to collimate the initial particle beam so that the initial particle beam can be in a parallel or nearly parallel state when it reaches the particle corrector.
  • the particle corrector is used to separate the initial particle beam to form multiple particle beams, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam. When the particle beam converges on the sample, the sample can be imaged, detected, exposed and processed with higher precision.
  • the particle system may also include a focusing lens.
  • the focusing lens may include M groups of focusing units, and the M groups of focusing units are arranged in one-to-one correspondence with the M through holes. Each group of focusing units is used to focus the corresponding particle beam to effectively focus the particle beam on the sample.
  • each particle beam since each particle beam is focused by an independent focusing unit, each particle beam can be focused exclusively to improve the focusing effect and make the particle beam array more uniform. In addition, it can also prevent particle beams from crossing each other and avoid interaction between different particle beams.
  • Figure 1 is a schematic cross-sectional structural diagram of a particle system provided by an embodiment of the present application.
  • Figure 2 is a schematic cross-sectional structural diagram of another particle system provided by an embodiment of the present application.
  • Figure 3 is a schematic cross-sectional structural diagram of a particle corrector provided by an embodiment of the present application.
  • Figure 4 is a schematic plan view of a first correction plate provided by an embodiment of the present application.
  • Figure 5 is a partial planar structural schematic diagram of a first correction plate provided by an embodiment of the present application.
  • Figure 6 is a partial planar structural schematic diagram of a first correction plate provided by an embodiment of the present application.
  • Figure 7 is a schematic three-dimensional structural diagram of an electrode assembly provided by an embodiment of the present application.
  • Figure 8 is a schematic plan view of an electrode assembly provided by an embodiment of the present application.
  • Figure 9 is a schematic three-dimensional structural diagram of another electrode assembly provided by an embodiment of the present application.
  • Figure 10 is a schematic plan view of another electrode assembly provided by an embodiment of the present application.
  • Figure 11 is a schematic three-dimensional structural diagram of another electrode assembly provided by an embodiment of the present application.
  • Figure 12 is a schematic plan view of another electrode assembly provided by an embodiment of the present application.
  • Figure 13 is a schematic cross-sectional structural diagram of a particle corrector provided by an embodiment of the present application.
  • Figure 14 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application.
  • Figure 15 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application.
  • Figure 16 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application.
  • Figure 17 is a schematic cross-sectional structural diagram of another particle straightener provided by an embodiment of the present application.
  • Figure 18 is a schematic cross-sectional structural diagram of a particle system provided by an embodiment of the present application.
  • the particle corrector provided by the embodiments of the present application can be applied in systems that need to adjust particle beams.
  • the initial particle beam described below refers to a collection of particles generated by a particle source and not separated.
  • a particle beam refers to a collection of particles after the initial particle beam is divided.
  • Particles refer to negative electrons.
  • the particles can also be charged particles such as ions.
  • the particle system is based on particle beams to achieve its basic functions. It mainly includes a particle source 10, a collimating lens 20, a particle corrector 30 and a focusing lens 40.
  • the particle source 10 is used to generate the initial particle beam 11; the collimating lens 20 is used to collimate the initial particle beam 11, so that the initial particle beam 11 can be in a parallel or nearly parallel state when it reaches the particle corrector 30.
  • the particle corrector 30 is used to separate the initial particle beam 11 to form multiple (four are shown in the figure) particle beams 12, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam 12. Make adjustments.
  • Focusing lens 40 is used to focus the particle beam onto the sample. When the particle beam 12 converges on the sample 01, higher-precision imaging, detection, exposure and other processing can be performed on the sample 01.
  • the wavelength of the particles is smaller than the wavelength of light waves. Therefore, microscopic imaging devices using particle systems (such as electron microscopes) can provide better resolution than optical microscopes and can observe more microscopic structures.
  • sample 01 can be a semiconductor device, a mask, and other types of entities.
  • Particle beam 12 can detect sample 01.
  • the particle straightener 30 includes a first beam splitter plate 31, a straightening plate assembly 32 and a control circuit (not shown in the figure).
  • the first beam splitting plate 31 has four beam splitting holes 311 , and the first beam splitting plate 31 is disposed at the front end of the correction plate assembly 32 .
  • the front end of the correction plate assembly 32 refers to the side of the correction plate assembly 32 that receives the particle beam 12 (the upper side in the figure); correspondingly, the rear end of the correction plate assembly 32 refers to the side where the correction plate assembly 32 transmits particles.
  • One side of bundle 12 (lower side in the figure).
  • the correction plate assembly 32 includes three stacked correction plates (such as corrector chips), which are a first correction plate 321, a second correction plate 322 and a third correction plate 323 respectively.
  • Each correction plate has four through holes 320 , and the four through holes 320 of each correction plate correspond to the four beam splitting holes 311 of the first beam splitting plate 31 in one-to-one correspondence. Specifically, the four particle beams 12 emerge from the four beam splitting holes 311, pass through the through holes 320 of the first correction plate 321, the second correction plate 322, and the third correction plate 323 in sequence, and finally pass through the third correction plate 320. The four through holes 320 of the plate 323 are exposed respectively.
  • each correction plate also includes four electrode assemblies (not shown in the figure), and each electrode assembly is used to generate an electric field in the corresponding through hole 320 .
  • the control circuit is electrically connected to the electrode assembly and is used to control the power supply of each electrode assembly to control parameters such as electric field intensity and direction in each through hole 320 .
  • the inclination angle, displacement, astigmatism and other parameters of the particle beam 12 can be corrected, thereby improving the quality of the particle beam 12.
  • the throughput of the particle system can be effectively improved to ensure the performance of the particle system. Specifically, in order to improve the throughput of the particle system, the beam current of the initial particle beam 11 generated by the particle source 10 can be increased.
  • the initial particle beam 11 generated by the particle source 10 is divided into a plurality of independent particle beams 12, in each particle beam 12, the Coulomb repulsion between the charged particles is small, making it less likely to cause beam spot expansion, etc. situation, therefore, is able to guarantee the resolution of the particle system.
  • the first beam splitting plate 31 may be a metal plate such as a copper plate or an aluminum plate, or may be a plate-shaped structure made of other conductive materials.
  • the first beam splitting plate 31 may also be an insulating plate whose surface is coated with conductive material.
  • the conductive material may be coated on the upper surface of the first beam splitting plate 31 and the inner wall of the beam splitting hole 311 , or may be coated on all surfaces of the first beam splitting plate 31 .
  • charged particles such as electrons
  • the charges can be derived to prevent charges from accumulating on the first beam splitting plate 31 .
  • the first beam splitting plate 31 may be a circular plate, an elliptical plate, a rectangular plate or other shaped plate structures.
  • the number of beam splitting holes 311 can be set according to different requirements.
  • the number of beam splitting holes 311 may be M, where M is an integer greater than or equal to 1.
  • the number of beam splitting holes 311 may be one or more.
  • the plurality of beam splitting holes 311 can be arranged in an annular array on the first beam splitting plate 31 , or can be arranged in a rectangular array or other relative positions.
  • the initial particle beam 11 collimated by the collimating lens 20 is not completely parallel, but has a certain tilt angle (or diffusion angle), and the closer the initial particle beam 11 is to the edge , the greater the tilt angle. In specific applications, this tilt angle needs to be corrected, otherwise the particle beam 12 will seriously deviate from the optical axis.
  • the four dotted lines in the figure respectively represent the optical axes of the four particle beams 12.
  • the first correction plate 321, the second correction plate 322 and the third correction plate 323 are arranged parallel to each other, and the four through holes 320 on each correction plate are respectively arranged coaxially. It can be understood that during specific implementation, the number of through holes 320 in each correction plate can be matched according to the number of beam splitting holes 311 in the first beam splitting plate 31 .
  • the first beam splitting plate 31 includes M beam splitting holes 311
  • M through holes 320 are provided in the first correcting plate 321, the second correcting plate 322 and the third correcting plate 323, and M
  • the beam splitting holes 311 and the 3*M through holes 320 are arranged in one-to-one correspondence.
  • the one-to-one arrangement of the beam splitting holes 311 and the through holes 320 means that the corresponding beam splitting holes 311 and the through holes 320 are used to pass the same particle beam 12 .
  • the number of correction plates included in the correction plate assembly 32 can also be set accordingly according to different needs.
  • the correction plate assembly 32 may include N correction plates arranged in a stack, where N is an integer greater than or equal to 1.
  • the correction plate assembly 32 may include only one correction plate, or may include two or more correction plates.
  • the three correction plates can independently adjust the particle beam 12.
  • the particle beam 12 has an inclination angle to the left before being injected into the through hole 320 of the first correction plate 321 .
  • the electrode assembly on the first correction plate 321 can deflect the particle beam 12 to a nearly vertical state, so that the propagation direction of the particle beam 12 is parallel to the optical axis.
  • the particle beam 12 has an inclination angle to the left during propagation; therefore, when the particle beam 12 propagates a certain distance, there is a certain deviation between its center and the optical axis.
  • the center of the particle beam 12 (which can also be understood as the spot position of the particle beam) needs to be adjusted.
  • the electrode assembly on the second correction plate 322 can deflect the particle beam 12 to a state with a rightward tilt angle, so that the particle beam 12 propagates An offset to the right can be generated during the process.
  • the electrode assembly on the third correction plate 323 can deflect the particle beam 12 to a nearly vertical state. At this time, the propagation direction of the particle beam 12 is consistent with the optical axis. coincide.
  • the inclination angle of the particle beam can be gradually adjusted through the first correction plate 321 , the second correction plate 322 and the third correction plate 323 so that the propagation direction of the particle beam 12 is parallel to the optical axis.
  • the position of the particle beam 12 can also be adjusted by the self-propagation of the particle beam 12 so that the center of the particle beam 12 coincides with the optical axis.
  • the inclination angle and position of each particle beam 12 need to be adjusted to varying degrees. adjust.
  • the leftmost and rightmost particle beams 12 have larger inclination angles, and the two particle beams 12 have opposite inclination angles.
  • the inclination angles of the two particle beams 12 located in the middle are smaller, and the inclination angles of the two particle beams 12 are opposite. Therefore, during specific implementation, when each particle beam 12 passes through the through hole 320 of the correction plate assembly 32, the electric field intensity and direction in each through hole 320 need to be adaptively adjusted so that each particle beam 12 is corrected. Finally, the parallel relationship can be maintained, and the distribution position of the particle beam 12 can be adjusted.
  • the number of correction plates included in the correction plate assembly 32 can be flexibly increased or decreased according to actual needs.
  • the deflection intensity and direction of the particle beam 12 by each correction plate can also be flexibly set.
  • the correction plate assembly 32 includes six correction plates arranged in a stack. They are the first correction plate 321, the second correction plate 322, the third correction plate 323, the fourth correction plate 324, the fifth correction plate 325 and the sixth correction plate 326 respectively. Among them, the first correcting plate 321, the second correcting plate 322, the third correcting plate 323 and the fourth correcting plate 324 are used to generate a leftward electric field force to the particle beam 12, so as to gradually deflect the inclination angle of the particle beam 12 to the left.
  • the fifth correcting plate 325 and the sixth correcting plate 326 are used to generate a rightward electric field force toward the particle beam 12 so as to gradually deflect the inclination angle of the particle beam 12 to the right. Finally, the center of the particle beam 12 coincides with the optical axis.
  • the control circuit can separately control the power supply of each electrode assembly, so that the intensity and direction of the electric field in each through hole 320 can be separately controlled to effectively improve the use of the particle corrector 30 Flexibility and scope of application.
  • the control circuit can control the power supply of the electrode assembly to adaptively correct the particle beam after the inclination angle changes by changing the intensity or direction of the electric field.
  • the power supply control of the electrode assembly by the control circuit includes but is not limited to: controlling the power supply and off state of the electrode assembly, the size of the electric field formed, the direction of the electric field, etc.
  • each electrode assembly may include multiple electrodes, thereby generating a more uniform and more directional electric field.
  • each electrode assembly may include eight electrodes 34 (one is marked in the figure), and the eight electrodes 34 are arranged on the periphery of the through hole 320 .
  • the eight electrodes 34 can be evenly distributed along the central axis of the through hole 320, or the position of each electrode 34 can be adaptively adjusted according to different needs.
  • the electrode 34 is not limited to being arranged on the periphery of the through hole 320 , but can also be arranged on the inner wall of the through hole 320 or other locations near it; that is, it only needs to ensure that the electrode assembly can be positioned in the corresponding through hole 320 Just generate an electric field inside.
  • control circuit can independently control the power supply of each electrode 34, so that parameters such as the direction and intensity of the electric field in each through hole 320 can be accurately controlled. That is, through the plurality of electrodes 34 and the control circuit, an electric field in any direction can be generated in a direction perpendicular to the axis of the through hole 320 (or it can also be understood that the direction of the electric field can be rotated 360° in a plane perpendicular to the axis of the through hole 320 ), therefore, the particle beam 12 can be deflected and positioned in any direction.
  • the plane of the electrode assembly may be perpendicular to the central axis of the through hole 320 , so that an electric field perpendicular to the central axis of the through hole 320 can be generated in the through hole 320 .
  • the electrode assembly includes eight electrodes 34 arranged in a circular array.
  • the planes of the eight electrodes 34 are parallel to the surface of the first correction plate 321 .
  • the central axis of the through hole 320 is perpendicular to the surface of the first correction plate 321. Therefore, when the plane of the eight electrodes 34 is parallel to the surface of the first correction plate 321, the plane of the electrode assembly is Perpendicular to the central axis of the through hole 320 , an electric field perpendicular to the central axis of the through hole 320 can be generated in the through hole 320 .
  • the plane of the electrode assembly may be any plane parallel to the first correction plate 321 .
  • the plane of the electrode assembly may coincide with any one of the surfaces of the first correction plate 321 , or may be the central symmetry plane of the two surfaces of the first correction plate 321 .
  • the control circuit can pass a certain voltage to each electrode 34 to form a uniform electric field opposite to the first direction in the through hole 320, so that the particles Beam 12 is deflected in a first direction.
  • the first direction refers to any direction perpendicular to the axis of the through hole 320 .
  • control circuit can flexibly control the energization state of each electrode 34 according to different requirements, which will not be described again here.
  • the astigmatism of the particle beam 12 can also be adjusted through the correction plate assembly 32 .
  • each component such as the electromagnetic lens
  • assembly errors may also occur during the assembly process of each component. These errors will also increase the astigmatism problem of the particle beam.
  • the control circuit can pass a certain voltage to each electrode 34 to form a correction electric field, thereby correcting the astigmatism problem of the particle beam 12 .
  • the X direction and the Y direction are only schematic directions, and during specific implementation, the angle between the X direction and the Y direction is not limited. That is, the particle corrector 30 provided by the embodiment of the present application can correct the divergence angle of the particle beam 12 in any direction.
  • each electrode assembly is not limited to the eight mentioned above.
  • each electrode assembly may include 2, 3, 4 or more electrodes, and the position arrangement of the multiple electrodes can be flexibly adjusted according to the actual situation, which is not limited in this application.
  • the shapes of the electrodes can also be diverse.
  • the electrode 34 has an arc-shaped structure. Specifically, please refer to FIG. 8 . In the direction perpendicular to the central axis of the through hole, the cross-section of the electrode 34 is arc-shaped, and the inner arc surfaces of the eight electrodes 34 are all facing the axis of the through hole.
  • the electrode 34 has a rectangular block structure. Specifically, referring to FIG. 10 , the electrode 34 has a rectangular cross-section in a direction perpendicular to the central axis of the through hole.
  • the electrode 34 has a trapezoidal block structure. Specifically, referring to FIG. 12 , the electrode 34 has a trapezoidal cross-section in a direction perpendicular to the central axis of the through hole.
  • the shape and structure of the electrode 34 can be flexibly set according to different situations, and this application is not limited thereto.
  • the particle straightener 30 when the particle straightener 30 is specifically configured, in addition to the first beam splitting plate 31 and the straightening plate assembly 32 , it may also include a second beam splitting plate 33 .
  • the second beam splitting plate 33 is located at the rear end (lower end in the figure) of the correction plate assembly 32 , and the second beam splitting plate 33 also has a beam splitting hole 331 .
  • the structures of the first beam splitting plate 31 and the second beam splitting plate 33 may be identical or different.
  • the relative relationships between the beam splitting holes 311 in the first beam splitting plate 31 , the through holes 320 in the correction plate assembly 32 , and the beam splitting holes 331 in the second beam splitting plate 33 may be diverse.
  • the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 have the same cross-sectional size, and the two beam splitting holes 311 and 331 in the second beam splitting plate 33 have the same cross-sectional size.
  • the beam splitting holes are coaxially arranged.
  • the cross-sectional size of the beam splitting hole 311 refers to the area of the beam splitting hole 311; correspondingly, the cross-sectional size of the second beam splitting hole 331 refers to the area of the beam splitting hole 331, and the cross-sectional size of the through hole 320 refers to The area of the through hole 320.
  • first beam splitting plate 31 and the second beam splitting plate 33 may be retained.
  • the first beam splitter plate 31 can separate the initial particle beam (not shown in the figure), and then the plurality of particle beams 12 are processed by the correction plate assembly 32 .
  • the particle beam 12 enters the through hole 320 from the position of the optical axis. Since the particle beam 12 has a certain inclination angle, during the downward propagation process will produce an offset to the right. In addition, since the closer to the inner wall of the through hole 320 is, the uniformity of the electric field becomes worse. Therefore, in order to ensure the quality of the particle beam 12 , there is a certain limit on the lateral offset of the particle beam 12 . Alternatively, the minimum size of the inner diameter of the through hole 320 is limited.
  • the correction plate assembly 32 may first separate the initial particle beam (not shown in the figure) and correct the particle beam 12 .
  • the second beam splitting plate 33 can filter the particle beam 12 to transmit the area of the particle beam 12 away from the electrode and to transmit the area of the particle beam 12 close to the electrode. block. At the same time, it can also effectively improve the filling factor of the system.
  • the cross section of the beam splitting hole 311 in the first beam splitting plate 31 can also be larger than that of the second beam splitting plate.
  • the cross section of the beam splitting hole 331 in 33 can also be larger than that of the second beam splitting plate.
  • the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 are coaxially arranged.
  • the first beam splitting plate 31 is used to separate the initial particle beam (not shown in the figure).
  • the second beam splitting plate 33 is used to filter the particle beam 12 to filter out the part of the particle beam 12 that is too close to the electrode, thereby effectively ensuring the quality of the particle beam 12 .
  • the filling factor of the particle straightener 30 can also be improved.
  • the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 may also be disposed asynchronously.
  • the beam splitting hole 311 may be shifted by a certain distance toward the irradiation direction of the particle beam 311 (left direction in the figure).
  • the particle beam 12 passes through the beam splitting hole 311, it has a certain inclination angle, so it will shift to the right during its downward propagation. Since the uniformity of the electric field becomes worse at a position closer to the electrode (or the inner wall of the through hole 320 ), problems such as aberration may occur in the particle beam 12 . Therefore, after shifting the beam splitting hole 311 to the left by a certain distance, the lateral shifting distance of the particle beam 12 in the through hole 320 can be increased to reduce the adverse effects of the electrode on the particle beam 12 .
  • the filling factor of the particle straightener 30 can also be improved.
  • the final particle beam 12 enters the through hole 320 from a position deviated from the optical axis (the left position in the figure), and this part of the particle beam 12 is located between the upper limit of displacement on the left and the upper limit of displacement on the right, and is eventually corrected back to the position of the optical axis. Therefore, the lateral offset of the particle beam 12 is increased.
  • it is beneficial to reduce the minimum size of the inner diameter of the through hole 320 and therefore, it is beneficial to increase the filling factor of the orthotic device 30 .
  • the cross-sectional sizes of the beam splitting holes 311 of the first beam splitting plate 31 and the beam splitting holes 331 of the second beam splitting plate 33 can be adaptively adjusted according to different needs.
  • the beam splitting hole 311 in the first beam splitting plate 31 and the through hole 320 in the correction plate assembly 32 may be arranged coaxially or not.
  • the beam splitting hole 331 in the second beam splitting plate 33 and the through hole 320 in the correction plate assembly 32 can be arranged coaxially or asynchronously. This application does not limit this.
  • embodiments of the present application also provide a particle system. It includes: particle source 10, collimating lens 20 and the above-mentioned particle corrector 30.
  • the particle source 10 is used to generate the initial particle beam 11; the collimating lens 20 is used to collimate the initial particle beam 11, so that the initial particle beam 11 can be in a parallel or nearly parallel state when it reaches the particle corrector 30.
  • the particle corrector 30 is used to separate the initial particle beam 11 to form multiple (four are shown in the figure) particle beams 12, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam 12. Make adjustments. When the particle beam 12 converges on the sample 01, higher-precision imaging, detection, exposure and other processing can be performed on the sample 01.
  • the collimating lens 20 may be an electromagnetic lens.
  • the initial particle beam 11 can be focused or diverged through an electric field or a magnetic field, thereby achieving its collimating effect.
  • the type and structure of the collimating lens are not limited in this application.
  • the particle system may also include a focusing lens 40 .
  • the focusing lens 40 may include four groups of focusing units 41 , and each group of focusing units 41 is used to focus a single particle beam 12 so as to effectively focus the particle beam 12 on the sample 01 .
  • each particle beam 12 since each particle beam 12 is focused by an independent focusing unit 41, each particle beam 12 can be focused exclusively to improve the focusing effect and make the array of particle beams 12 more uniform. In addition, it can also prevent particle beams 12 from crossing each other and avoid mutual influence between different particle beams 12 .

Abstract

A particle corrector and a particle system, which relate to the technical field of particles, and are used for solving the problems of the particle beam current being relatively low, the resolution being low, the particle beam quality being poor, etc. The particle corrector comprises: a first beam-splitting plate (31) and a correction plate assembly (32), wherein the first beam-splitting plate (31) is provided with M beam-splitting holes (311); and the correction plate assembly (32) comprises N correction plates (321, 322, 323), which are arranged in a stacked manner. Each correction plate (321, 322, 323) has M through holes (320) and M electrode assemblies; the M beam-splitting holes (311) are arranged corresponding to the M through holes (320) on a one-to-one basis; the M electrode assemblies are arranged corresponding to the M through holes (320) on a one-to-one basis; and each electrode assembly is used for generating, in the corresponding through hole (320), an electric field which is used for correcting a particle beam, wherein M is an integer greater than or equal to 1, and N is an integer greater than or equal to 1. In the particle corrector, the particle beam flow and the particle beam quality can be effectively improved; in addition, the flexibility and the application range of the particle corrector can be improved.

Description

一种粒子矫正器和粒子系统A particle corrector and particle system 技术领域Technical field
本申请涉及粒子技术领域,尤其涉及一种粒子矫正器和粒子系统。The present application relates to the field of particle technology, and in particular to a particle straightener and a particle system.
背景技术Background technique
在粒子系统中,由于所使用的粒子(如电子、离子等)具有较短的波长,因此,当粒子系统应用到显微成像等领域中时,可以提供优于传统光学系统的分辨率。另外,粒子系统还能够应用在半导体工艺缺陷检测、掩膜版检测、电子束曝光等领域中,且具有良好的精度和分辨率。在实际应用中,由于带电粒子之间存在库伦斥力,因此,一味地增大带电粒子束中的束流(beam current)来增加粒子系统的吞吐量会造成束斑扩大、分辨率降低等不良问题。另外,当存在多粒子束时,粒子束需要通过粒子矫正器进行矫正,以提升粒子束的品质,但是目前的粒子矫正器仍存在诸多不足。例如,当不同位置处的粒子束的倾角产生变化时,目前的粒子矫正器不能针对某个位置的电场进行独立调整,因此,不能对倾角产生变化的粒子束进行针对性调整,具有一定的局限性。In particle systems, since the particles used (such as electrons, ions, etc.) have shorter wavelengths, when the particle system is applied to fields such as microscopy imaging, it can provide better resolution than traditional optical systems. In addition, the particle system can also be used in semiconductor process defect detection, mask inspection, electron beam exposure and other fields, and has good accuracy and resolution. In practical applications, due to the Coulomb repulsion between charged particles, blindly increasing the beam current in the charged particle beam to increase the throughput of the particle system will cause undesirable problems such as beam spot expansion and resolution reduction. . In addition, when there are multiple particle beams, the particle beam needs to be corrected by a particle corrector to improve the quality of the particle beam. However, the current particle corrector still has many shortcomings. For example, when the inclination angle of the particle beam changes at different locations, the current particle corrector cannot independently adjust the electric field at a certain location. Therefore, it cannot make targeted adjustments to the particle beam whose inclination angle changes, which has certain limitations. sex.
发明内容Contents of the invention
本申请提供了一种有利于提升粒子束流、且能够保证粒子束品质的粒子矫正器和粒子系统。This application provides a particle straightener and a particle system that are beneficial to improving the particle beam current and ensuring the quality of the particle beam.
一方面,本申请提供了一种粒子矫正器,包括:第一分束板和矫正板组件。第一分束板具有M个分束孔。矫正板组件包括N个堆叠设置的矫正板,每个矫正板具有M个通孔和M个电极组件,M个分束孔与M个通孔一一对应设置,且M个电极组件与M个通孔一一对应设置,每个电极组件用于在对应的通孔内产生用于对粒子束进行矫正的电场。其中,M和N为大于或等于1的整数。在本申请提供的粒子矫正器中,可以将粒子源所产生的粒子束分隔成多个独立的粒子束。当多个粒子束同时工作时,可以在不牺牲系统分辨率的情况下提升系统的吞吐量。具体来说,为了提升系统的吞吐量可以增大粒子源所产生的粒子束的束流。由于粒子源所产生的粒子束被分隔成了多个独立的粒子束,因此,在每个粒子束中,带电粒子之间的库伦斥力较小,从而不易产生束斑扩大等情况,因此,能够保证系统的分辨率。On the one hand, the present application provides a particle straightener, including: a first beam splitting plate and a straightening plate assembly. The first beam splitting plate has M beam splitting holes. The correction plate assembly includes N stacked correction plates. Each correction plate has M through holes and M electrode assemblies. The M beam splitting holes are arranged in one-to-one correspondence with the M through holes, and the M electrode assemblies are arranged in The through holes are arranged in one-to-one correspondence, and each electrode assembly is used to generate an electric field in the corresponding through hole for correcting the particle beam. Among them, M and N are integers greater than or equal to 1. In the particle corrector provided by the present application, the particle beam generated by the particle source can be separated into multiple independent particle beams. When multiple particle beams work simultaneously, the system throughput can be improved without sacrificing system resolution. Specifically, in order to improve the throughput of the system, the beam current of the particle beam generated by the particle source can be increased. Since the particle beam generated by the particle source is divided into multiple independent particle beams, in each particle beam, the Coulomb repulsion between charged particles is small, making it less likely to cause beam spot expansion, etc. Therefore, it can Ensure system resolution.
在一些实现方式中,粒子矫正器中还可以包括控制电路,控制电路与M个电极组件电连接,用于对M个电极组件的供电进行分别控制,以控制每个通孔内所形成电场的强度和方向。由于控制电路能够对每个电极组件的供电进行分别控制,因此,在每个通孔内所形成的电场强度和方向可以进行差异化控制,同时,还能提升粒子矫正器的灵活性和适用范围。例如,当某一个粒子束的倾角产生变化后,控制电路可以对电极组件的供电进行控制,以通过改变电场强度或方向的方式对倾角产生变化后的粒子束进行适应性矫正。In some implementations, the particle corrector may also include a control circuit electrically connected to the M electrode assemblies for separately controlling the power supply of the M electrode assemblies to control the electric field formed in each through hole. Strength and direction. Since the control circuit can control the power supply of each electrode assembly separately, the intensity and direction of the electric field formed in each through hole can be differentially controlled, and at the same time, it can also increase the flexibility and application range of the particle straightener. . For example, when the inclination angle of a certain particle beam changes, the control circuit can control the power supply of the electrode assembly to adaptively correct the particle beam after the inclination angle changes by changing the intensity or direction of the electric field.
在具体实施时,第一分束板可以设置在矫正板组件的前端,也可以设置在矫正板组件的后端。当第一分束板设置在矫正板组件的前端时,第一分束板可以对粒子源所产生的初始粒子束进行有效分隔,然后,矫正板组件再对每个粒子束的倾角、位置和像散等参数进 行调节。当第一分束板设置在矫正板组件的后端时,矫正板组件可以对粒子源所产生的初始粒子束进行有效分隔,并对每个粒子束的倾角、位置和像散等参数进行调节。第一分束板可以对被矫正后的粒子束进行过滤,以保证最终粒子束的品质。In specific implementation, the first beam splitting plate may be disposed at the front end of the correcting plate assembly, or may be disposed at the rear end of the correcting plate assembly. When the first beam splitting plate is disposed at the front end of the correcting plate assembly, the first beam splitting plate can effectively separate the initial particle beam generated by the particle source. Then, the correcting plate assembly can then separate the inclination, position and angle of each particle beam. Adjust parameters such as astigmatism. When the first beam splitting plate is arranged at the rear end of the correction plate assembly, the correction plate assembly can effectively separate the initial particle beam generated by the particle source and adjust the inclination, position, astigmatism and other parameters of each particle beam. . The first beam splitter can filter the corrected particle beam to ensure the quality of the final particle beam.
当然,在实际应用时,也可以在矫正板组件的前端和后端均设置分束板。例如,可以在矫正板组件的前端设置第一分束板,从而能够将初始粒子束分隔成M个粒子束。第二分束板可以对被矫正板组件矫正的粒子束进行过滤等处理,以提升最终粒子束的品质。Of course, in practical applications, beam splitting plates can also be provided at both the front and rear ends of the correction plate assembly. For example, a first beam splitting plate can be provided at the front end of the correcting plate assembly, so that the initial particle beam can be divided into M particle beams. The second beam splitting plate can perform filtering and other processing on the particle beam corrected by the correction plate assembly to improve the quality of the final particle beam.
在具体设置时,第一分束板、第二分束板的结构可以完全相同,也可以不同。另外,第一分束板中的分束孔、矫正板组件中的通孔以及第二分束板中的分束孔之间的相对关系可以是多样的。In specific settings, the structures of the first beam splitting plate and the second beam splitting plate may be exactly the same or different. In addition, the relative relationships between the beam splitting holes in the first beam splitting plate, the through holes in the correction plate assembly, and the beam splitting holes in the second beam splitting plate may be diverse.
例如,第一分束板中的分束孔和第二分束板中的分束孔的截面大小相同,且两个分束孔同轴设置。For example, the beam splitting holes in the first beam splitting plate and the beam splitting holes in the second beam splitting plate have the same cross-sectional size, and the two beam splitting holes are coaxially arranged.
或者,第一分束板中的分束孔的截面也可以大于第二分束板中分束孔的截面。具体来说,第一分束板用于对初始粒子束进行分隔。第二分束板用于对粒子束进行过滤,以滤除粒子束中过于靠近电极处的部分,从而有效保证粒子束的品质。另外,还能提升粒子矫正器的填充因子。其中,填充因子指的是粒子束移动范围与通孔直径的比值。Alternatively, the cross section of the beam splitting hole in the first beam splitting plate may be larger than the cross section of the beam splitting hole in the second beam splitting plate. Specifically, the first beam splitting plate is used to separate the initial particle beam. The second beam splitter is used to filter the particle beam to filter out the part of the particle beam that is too close to the electrode, thereby effectively ensuring the quality of the particle beam. In addition, the fill factor of particle correctors can be increased. Among them, the fill factor refers to the ratio of the particle beam movement range to the diameter of the through hole.
或者,第一分束板中的分束孔和第二分束板中的分束孔也可以不同轴设置。Alternatively, the beam-splitting holes in the first beam-splitting plate and the beam-splitting holes in the second beam-splitting plate may also be disposed asynchronously.
具体来说,在第一分束板中,分束孔可以向粒子束的照射方向(倾斜方向的反方向)偏移一定距离。当粒子束穿过第一分束板的分束孔后,由于具有一定的倾角,因此,在向下传播的过程中会产生一定的偏移量。由于越靠近电极的位置,电场的均匀性越差,因此会使粒子束产生像差等问题。因此,将第一分束板的分束孔向粒子束的照射方向偏移一定距离后,可以增加粒子束在通孔内的横向偏移距离,以降低电极对粒子束产生的不良影响。另外,还能提升粒子矫正器的填充因子。Specifically, in the first beam splitting plate, the beam splitting hole may be shifted by a certain distance to the irradiation direction of the particle beam (the opposite direction of the oblique direction). When the particle beam passes through the beam splitting hole of the first beam splitting plate, it will have a certain offset during its downward propagation due to its certain inclination angle. Since the closer to the electrode, the uniformity of the electric field becomes worse, causing problems such as aberration of the particle beam. Therefore, after the beam splitting hole of the first beam splitting plate is offset by a certain distance toward the irradiation direction of the particle beam, the lateral offset distance of the particle beam in the through hole can be increased to reduce the adverse impact of the electrode on the particle beam. In addition, the fill factor of particle correctors can be increased.
可以理解的是,在其他的实施方式中,第一分束板的分束孔和第二分束板的分束孔的截面大小可以根据不同需求进行适应性调整。另外,第一分束板中的分束孔与矫正板组件中的通孔可以同轴设置,也可以不同轴设置。相应的,第二分束板中的分束孔与矫正板组件中的通孔可以同轴设置,也可以不同轴设置。在此不作限定。It can be understood that in other embodiments, the cross-sectional sizes of the beam splitting holes of the first beam splitting plate and the beam splitting holes of the second beam splitting plate can be adaptively adjusted according to different needs. In addition, the beam-splitting hole in the first beam-splitting plate and the through-hole in the correction plate assembly may be arranged coaxially or non-axially. Correspondingly, the beam-splitting hole in the second beam-splitting plate and the through-hole in the correction plate assembly can be arranged coaxially or non-axially. No limitation is made here.
另外,在每个电极组件中,可以包括多个电极,从而可以在对应的通孔内产生更均匀和更多方向的电场。In addition, in each electrode assembly, multiple electrodes may be included, so that a more uniform and more directional electric field may be generated within the corresponding through hole.
在具体设置时,多个电极可以沿通孔的中心轴均匀布设,也可以根据不同需求对每个电极的位置进行适应性调整。可以理解的是,在具体设置时,电极并不仅限于设置在通孔的内壁,还可以设置在通孔附近的其他位置;即只需保证电极组件能够在对应的通孔内产生电场即可。In specific settings, multiple electrodes can be evenly distributed along the central axis of the through hole, or the position of each electrode can be adaptively adjusted according to different needs. It can be understood that during specific arrangement, the electrode is not limited to being arranged on the inner wall of the through hole, but can also be arranged at other positions near the through hole; that is, it only needs to ensure that the electrode assembly can generate an electric field in the corresponding through hole.
另外,控制电路可以对每个电极的供电进行独立控制,从而可以对每个通孔内的电场方向、强度等参数进行精准的控制。即通过多个电极以及控制电路,可以在垂直于通孔的轴心方向产生任意方向的电场(或者也可以理解为电场的方向可以在垂直于通孔轴心的平面内360°旋转),因此,可以对粒子束产生任意方向的偏转和位置偏移。In addition, the control circuit can independently control the power supply of each electrode, so that parameters such as the direction and intensity of the electric field in each through hole can be accurately controlled. That is, through multiple electrodes and control circuits, an electric field in any direction can be generated in a direction perpendicular to the axis of the through hole (or it can also be understood that the direction of the electric field can rotate 360° in a plane perpendicular to the axis of the through hole), so , which can deflect and position the particle beam in any direction.
在具体实施时,在垂直于通孔的轴心的方向上,电极的截面可以为方形、矩形、弧形或梯形等形状。其中,电极的形状构造和排布位置本申请不作限定。In specific implementation, in the direction perpendicular to the axis of the through hole, the cross section of the electrode may be square, rectangular, arcuate or trapezoidal. The shape, structure and arrangement position of the electrodes are not limited in this application.
另一方面,本申请还提供了一种粒子系统。包括:粒子源、准直透镜和粒子矫正器。粒子源用于产生初始粒子束;准直透镜用于对初始粒子束进行准直,以使初始粒子束在到 达粒子矫正器时,能够处于平行或接近平行的状态。粒子矫正器用于对初始粒子束进行分隔,以形成多个粒子束,并可以对每个粒子束的倾角、偏移量、像散等参数进行调节。当粒子束汇聚到样品后,可以对样品的进行较高精度的成像、检测、曝光等处理。On the other hand, this application also provides a particle system. Includes: particle source, collimating lens and particle corrector. The particle source is used to generate the initial particle beam; the collimating lens is used to collimate the initial particle beam so that the initial particle beam can be in a parallel or nearly parallel state when it reaches the particle corrector. The particle corrector is used to separate the initial particle beam to form multiple particle beams, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam. When the particle beam converges on the sample, the sample can be imaged, detected, exposed and processed with higher precision.
在一些实现方式中,为了将粒子束更好的汇聚到样品上,粒子系统中还可以包含聚焦透镜。聚焦透镜中可以包含M组聚焦单元,且M组聚焦单元与M个通孔一一对应设置。每组聚焦单元用于对相应的粒子束进行聚焦,以将粒子束有效的聚焦在样品上。另外,由于每个粒子束分别通过独立的聚焦单元进行聚焦,因此,可以对每个粒子束进行专属聚焦,以提升聚焦效果,使粒子束阵列更均一。另外,还能防止粒子束之间相互交叉,避免了不同粒子束之间的相互影响。In some implementations, in order to better focus the particle beam onto the sample, the particle system may also include a focusing lens. The focusing lens may include M groups of focusing units, and the M groups of focusing units are arranged in one-to-one correspondence with the M through holes. Each group of focusing units is used to focus the corresponding particle beam to effectively focus the particle beam on the sample. In addition, since each particle beam is focused by an independent focusing unit, each particle beam can be focused exclusively to improve the focusing effect and make the particle beam array more uniform. In addition, it can also prevent particle beams from crossing each other and avoid interaction between different particle beams.
附图说明Description of the drawings
图1为本申请实施例提供的一种粒子系统的剖面结构示意图;Figure 1 is a schematic cross-sectional structural diagram of a particle system provided by an embodiment of the present application;
图2为本申请实施例提供的另一种粒子系统的剖面结构示意图;Figure 2 is a schematic cross-sectional structural diagram of another particle system provided by an embodiment of the present application;
图3为本申请实施例提供的一种粒子矫正器的剖面结构示意图;Figure 3 is a schematic cross-sectional structural diagram of a particle corrector provided by an embodiment of the present application;
图4为本申请实施例提供的一种第一矫正板的平面结构示意图;Figure 4 is a schematic plan view of a first correction plate provided by an embodiment of the present application;
图5为本申请实施例提供的一种第一矫正板的局部平面结构示意图;Figure 5 is a partial planar structural schematic diagram of a first correction plate provided by an embodiment of the present application;
图6为本申请实施例提供的一种第一矫正板的局部平面结构示意图;Figure 6 is a partial planar structural schematic diagram of a first correction plate provided by an embodiment of the present application;
图7为本申请实施例提供的一种电极组件的立体结构示意图;Figure 7 is a schematic three-dimensional structural diagram of an electrode assembly provided by an embodiment of the present application;
图8为本申请实施例提供的一种电极组件的平面结构示意图;Figure 8 is a schematic plan view of an electrode assembly provided by an embodiment of the present application;
图9为本申请实施例提供的另一种电极组件的立体结构示意图;Figure 9 is a schematic three-dimensional structural diagram of another electrode assembly provided by an embodiment of the present application;
图10为本申请实施例提供的另一种电极组件的平面结构示意图;Figure 10 is a schematic plan view of another electrode assembly provided by an embodiment of the present application;
图11为本申请实施例提供的另一种电极组件的立体结构示意图;Figure 11 is a schematic three-dimensional structural diagram of another electrode assembly provided by an embodiment of the present application;
图12为本申请实施例提供的另一种电极组件的平面结构示意图;Figure 12 is a schematic plan view of another electrode assembly provided by an embodiment of the present application;
图13为本申请实施例提供的一种粒子矫正器的剖面结构示意图;Figure 13 is a schematic cross-sectional structural diagram of a particle corrector provided by an embodiment of the present application;
图14为本申请实施例提供的另一种粒子矫正器的剖面结构示意图;Figure 14 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application;
图15为本申请实施例提供的另一种粒子矫正器的剖面结构示意图;Figure 15 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application;
图16为本申请实施例提供的另一种粒子矫正器的剖面结构示意图;Figure 16 is a schematic cross-sectional structural diagram of another particle corrector provided by an embodiment of the present application;
图17为本申请实施例提供的另一种粒子矫正器的剖面结构示意图;Figure 17 is a schematic cross-sectional structural diagram of another particle straightener provided by an embodiment of the present application;
图18为本申请实施例提供的一种粒子系统的剖面结构示意图。Figure 18 is a schematic cross-sectional structural diagram of a particle system provided by an embodiment of the present application.
附图标记Reference signs
01-样品;10-粒子源;11-初始粒子束;12-粒子束;20-准直透镜;30-粒子矫正器;31-第一分束板;311-分束孔;32-矫正板组件;320-通孔;321-第一矫正板;322-第二矫正板;323-第三矫正板;324-第四矫正板;325-第五矫正板;326-第六矫正板;33-第二分束板;34-电极;331-分束孔;40-聚焦透镜;41-聚焦单元。01-sample; 10-particle source; 11-initial particle beam; 12-particle beam; 20-collimating lens; 30-particle corrector; 31-first beam splitting plate; 311-beam splitting hole; 32-correction plate Component; 320-through hole; 321-first correction plate; 322-second correction plate; 323-third correction plate; 324-fourth correction plate; 325-fifth correction plate; 326-sixth correction plate; 33 -The second beam splitting plate; 34-electrode; 331-beam splitting hole; 40-focusing lens; 41-focusing unit.
具体实施方式Detailed ways
为了使本申请的目的、技术方案和优点更加清楚,下面将结合附图对本申请作进一步地详细描述。In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be described in further detail below in conjunction with the accompanying drawings.
为了方便理解本申请实施例提供的粒子矫正器,下面首先介绍一下其应用场景。In order to facilitate understanding of the particle corrector provided by the embodiment of the present application, its application scenarios are first introduced below.
本申请实施例提供的粒子矫正器,可以应用在需要对粒子束进行调节的系统中。需要说明的是,为了便于理解本申请技术方案,下述中所描述的初始粒子束指的是由粒子源产生且未被分隔的粒子集合。粒子束指的是初始粒子束被分隔后的粒子集合。粒子指的是负电子。当然,在实际应用时,粒子也可以是离子等带电粒子。The particle corrector provided by the embodiments of the present application can be applied in systems that need to adjust particle beams. It should be noted that, in order to facilitate understanding of the technical solution of the present application, the initial particle beam described below refers to a collection of particles generated by a particle source and not separated. A particle beam refers to a collection of particles after the initial particle beam is divided. Particles refer to negative electrons. Of course, in practical applications, the particles can also be charged particles such as ions.
如图1所示,以粒子系统为例。粒子系统是基于粒子束来实现其基本功能的。其主要包括粒子源10、准直透镜20、粒子矫正器30和聚焦透镜40。粒子源10用于产生初始粒子束11;准直透镜20用于对初始粒子束11进行准直,以使初始粒子束11在到达粒子矫正器30时,能够处于平行或接近平行的状态。粒子矫正器30用于对初始粒子束11进行分隔,以形成多个(图中示出有四个)粒子束12,并可以对每个粒子束12的倾角、偏移量、像散等参数进行调节。聚焦透镜40用于将粒子束聚焦到样品上。当粒子束12汇聚到样品01后,可以对样品01的进行较高精度的成像、检测、曝光等处理。As shown in Figure 1, take the particle system as an example. The particle system is based on particle beams to achieve its basic functions. It mainly includes a particle source 10, a collimating lens 20, a particle corrector 30 and a focusing lens 40. The particle source 10 is used to generate the initial particle beam 11; the collimating lens 20 is used to collimate the initial particle beam 11, so that the initial particle beam 11 can be in a parallel or nearly parallel state when it reaches the particle corrector 30. The particle corrector 30 is used to separate the initial particle beam 11 to form multiple (four are shown in the figure) particle beams 12, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam 12. Make adjustments. Focusing lens 40 is used to focus the particle beam onto the sample. When the particle beam 12 converges on the sample 01, higher-precision imaging, detection, exposure and other processing can be performed on the sample 01.
例如,当粒子系统应用在显微成像等领域中时,由于粒子的波长小于光波的波长。因此,应用粒子系统的显微成像装置(如电子显微镜),可以提供优于光学显微镜的分辨率,并且可以观察更加微观的结构。For example, when particle systems are used in fields such as microscopy imaging, the wavelength of the particles is smaller than the wavelength of light waves. Therefore, microscopic imaging devices using particle systems (such as electron microscopes) can provide better resolution than optical microscopes and can observe more microscopic structures.
另外,粒子系统还可以应用在质量检测等领域中。例如,样品01可以是半导体器件、掩膜版等多种类型的实体。粒子束12可以对样品01进行检测。In addition, particle systems can also be used in fields such as quality inspection. For example, sample 01 can be a semiconductor device, a mask, and other types of entities. Particle beam 12 can detect sample 01.
为了使本申请的目的、技术方案和优点更加清楚,下面将结合附图和具体实施例对本申请作进一步地详细描述。In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.
以下实施例中所使用的术语只是为了描述特定实施例的目的,而并非旨在作为对本申请的限制。如在本申请的说明书和所附权利要求书中所使用的那样,单数表达形式“一个”、“一种”、“上述”、“该”和“这一”旨在也包括例如“一个或多个”这种表达形式,除非其上下文中明确地有相反指示。还应当理解,在本申请以下各实施例中,“至少一个”、“一个或多个”是指一个、两个或两个以上。术语“和/或”,用于描述关联对象的关联关系,表示可以存在三种关系;例如,A和/或B,可以表示:单独存在A,同时存在A和B,单独存在B的情况,其中A、B可以是单数或者复数。字符“/”一般表示前后关联对象是一种“或”的关系。The terminology used in the following examples is for the purpose of describing specific embodiments only and is not intended to limit the application. As used in the specification and appended claims of this application, the singular expressions "a," "an," "the above," "the" and "the" are intended to also include, for example, "a or "plural" unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of this application, "at least one" and "one or more" refer to one, two or more than two. The term "and/or" is used to describe the relationship between associated objects, indicating that there can be three relationships; for example, A and/or B can mean: A exists alone, A and B exist simultaneously, and B exists alone, Where A and B can be singular or plural. The character "/" generally indicates that the related objects are in an "or" relationship.
在本说明书中描述的参考“一个实施例”或“一些实施例”等意味着在本申请的一个或多个实施例中包括结合该实施例描述的特定特征、结构或特点。由此,在本说明书中的不同之处出现的语句“在一个实施例中”、“在一些实施例中”、“在其他一些实施例中”、“在另外一些实施例中”等不是必然都参考相同的实施例,而是意味着“一个或多个但不是所有的实施例”,除非是以其他方式另外特别强调。术语“包括”、“包含”、“具有”及它们的变形都意味着“包括但不限于”,除非是以其他方式另外特别强调。Reference in this specification to "one embodiment" or "some embodiments" or the like means that a particular feature, structure or characteristic described in connection with the embodiment is included in one or more embodiments of the application. Therefore, the phrases "in one embodiment", "in some embodiments", "in other embodiments", "in other embodiments", etc. appearing in different places in this specification are not necessarily References are made to the same embodiment, but rather to "one or more but not all embodiments" unless specifically stated otherwise. The terms “including,” “includes,” “having,” and variations thereof all mean “including but not limited to,” unless otherwise specifically emphasized.
如图2所示,在本申请提供的一个实施例中,粒子矫正器30包括第一分束板31、矫正板组件32和控制电路(图中未示出)。第一分束板31上具有四个分束孔311,且第一分束板31设置在矫正板组件32的前端。其中,矫正板组件32的前端指的是矫正板组件32接收粒子束12的一侧(图中的上侧);相应的,矫正板组件32的后端指的是矫正板组件32透出粒子束12的一侧(图中的下侧)。粒子源10所产生的初始粒子束11经准直透镜20准直到第一分束板31后,一部分粒子会被第一分束板31阻挡,另一部分粒子可以由多个分束孔311透出,从而能够将初始粒子束11分隔成四个粒子束12。从四个分束孔311透出的四个粒子束12会传播到矫正板组件32。在本申请提供的实施例中,矫正板组件32包 括三个堆叠设置的矫正板(例如矫正器芯片),分别为第一矫正板321、第二矫正板322和第三矫正板323。每个矫正板均具有四个通孔320,且每个矫正板的四个通孔320与第一分束板31的四个分束孔311一一对应。具体来说,从四个分束孔311中透出四个粒子束12,会依次经过第一矫正板321、第二矫正板322和第三矫正板323的通孔320,最后从第三矫正板323的四个通孔320分别透出。另外,每个矫正板还包括四个电极组件(图中未示出),每个电极组件用于在对应的通孔320内产生电场。控制电路与电极组件电连接,用于对每个电极组件的供电进行控制,以对每个通孔320内的电场强度、方向等参数进行控制。当粒子束12在经过通孔320时,在电场力的作用下,可以对粒子束12的倾角、位移量、像散等参数进行矫正,从而能够提升粒子束12的品质。另外,由于初始粒子束11会被粒子矫正器30进行分隔,因此,可以有效提升粒子系统的吞吐量,以保证粒子系统的使用性能。具体来说,为了提升粒子系统的吞吐量可以增大粒子源10所产生的初始粒子束11的束流。由于粒子源10所产生的初始粒子束11被分隔成了多个独立的粒子束12,因此,在每个粒子束12中,带电粒子之间的库伦斥力较小,从而不易产生束斑扩大等情况,因此,能够保证粒子系统的分辨率。As shown in Figure 2, in one embodiment provided by this application, the particle straightener 30 includes a first beam splitter plate 31, a straightening plate assembly 32 and a control circuit (not shown in the figure). The first beam splitting plate 31 has four beam splitting holes 311 , and the first beam splitting plate 31 is disposed at the front end of the correction plate assembly 32 . Wherein, the front end of the correction plate assembly 32 refers to the side of the correction plate assembly 32 that receives the particle beam 12 (the upper side in the figure); correspondingly, the rear end of the correction plate assembly 32 refers to the side where the correction plate assembly 32 transmits particles. One side of bundle 12 (lower side in the figure). After the initial particle beam 11 generated by the particle source 10 is collimated by the collimating lens 20 to the first beam splitting plate 31, part of the particles will be blocked by the first beam splitting plate 31, and other part of the particles can be transmitted through the plurality of beam splitting holes 311. , thereby being able to separate the initial particle beam 11 into four particle beams 12 . The four particle beams 12 transmitted from the four beam splitting holes 311 will propagate to the correction plate assembly 32 . In the embodiment provided in this application, the correction plate assembly 32 includes three stacked correction plates (such as corrector chips), which are a first correction plate 321, a second correction plate 322 and a third correction plate 323 respectively. Each correction plate has four through holes 320 , and the four through holes 320 of each correction plate correspond to the four beam splitting holes 311 of the first beam splitting plate 31 in one-to-one correspondence. Specifically, the four particle beams 12 emerge from the four beam splitting holes 311, pass through the through holes 320 of the first correction plate 321, the second correction plate 322, and the third correction plate 323 in sequence, and finally pass through the third correction plate 320. The four through holes 320 of the plate 323 are exposed respectively. In addition, each correction plate also includes four electrode assemblies (not shown in the figure), and each electrode assembly is used to generate an electric field in the corresponding through hole 320 . The control circuit is electrically connected to the electrode assembly and is used to control the power supply of each electrode assembly to control parameters such as electric field intensity and direction in each through hole 320 . When the particle beam 12 passes through the through hole 320, under the action of the electric field force, the inclination angle, displacement, astigmatism and other parameters of the particle beam 12 can be corrected, thereby improving the quality of the particle beam 12. In addition, since the initial particle beam 11 will be separated by the particle corrector 30, the throughput of the particle system can be effectively improved to ensure the performance of the particle system. Specifically, in order to improve the throughput of the particle system, the beam current of the initial particle beam 11 generated by the particle source 10 can be increased. Since the initial particle beam 11 generated by the particle source 10 is divided into a plurality of independent particle beams 12, in each particle beam 12, the Coulomb repulsion between the charged particles is small, making it less likely to cause beam spot expansion, etc. situation, therefore, is able to guarantee the resolution of the particle system.
在具体实施时,第一分束板31可以是铜板、铝板等金属板,也可以是由其他的导电材料制成的板状结构。或者,第一分束板31也可以是表面涂覆有导电材料的绝缘板。其中,导电材料可以涂覆在第一分束板31的上表面和分束孔311的内壁,也可以涂覆在第一分束板31的所有表面。当带电粒子(如电子)打在第一分束板31上后,电荷可以导出,以防止电荷在第一分束板31上积累。在具体设置时,第一分束板31可以是圆形板、椭圆形板、矩形板或者其他形状的板状结构。分束孔311的设置数量可以根据不同需求进行设置。概括来说,分束孔311的设置数量可以为M个,其中,M为大于或等于1的整数。例如,分束孔311可以是一个或者更多个。多个分束孔311在第一分束板31上可以进行环形阵列设置,也可以进行矩形阵列或其他的相对位置进行排布。In specific implementation, the first beam splitting plate 31 may be a metal plate such as a copper plate or an aluminum plate, or may be a plate-shaped structure made of other conductive materials. Alternatively, the first beam splitting plate 31 may also be an insulating plate whose surface is coated with conductive material. The conductive material may be coated on the upper surface of the first beam splitting plate 31 and the inner wall of the beam splitting hole 311 , or may be coated on all surfaces of the first beam splitting plate 31 . When charged particles (such as electrons) hit the first beam splitting plate 31 , the charges can be derived to prevent charges from accumulating on the first beam splitting plate 31 . In specific configuration, the first beam splitting plate 31 may be a circular plate, an elliptical plate, a rectangular plate or other shaped plate structures. The number of beam splitting holes 311 can be set according to different requirements. In summary, the number of beam splitting holes 311 may be M, where M is an integer greater than or equal to 1. For example, the number of beam splitting holes 311 may be one or more. The plurality of beam splitting holes 311 can be arranged in an annular array on the first beam splitting plate 31 , or can be arranged in a rectangular array or other relative positions.
由图2中可以看出,经准直透镜20准直后的初始粒子束11并不是完全平行的,而是具有一定的倾斜角(或扩散角度),并且,越靠近边缘的初始粒子束11,倾斜角越大。在具体应用时,这一倾斜角需要被矫正,否则粒子束12将严重偏离光轴。其中,图中的四个点划线分别表示四个粒子束12的光轴。It can be seen from Figure 2 that the initial particle beam 11 collimated by the collimating lens 20 is not completely parallel, but has a certain tilt angle (or diffusion angle), and the closer the initial particle beam 11 is to the edge , the greater the tilt angle. In specific applications, this tilt angle needs to be corrected, otherwise the particle beam 12 will seriously deviate from the optical axis. Among them, the four dotted lines in the figure respectively represent the optical axes of the four particle beams 12.
请继续参阅图2。在本申请提供的实施例中,第一矫正板321、第二矫正板322和第三矫正板323相互平行设置,且每个矫正板上的四个通孔320分别同轴设置。可以理解的是,在具体实施时,每个矫正板中通孔320的设置数量可以根据第一分束板31中分束孔311的设置数量进行匹配设置。概括来说,当第一分束板31中包含有M个分束孔311时,第一矫正板321、第二矫正板322和第三矫正板323中均设置M个通孔320,且M个分束孔311和3*M个通孔320一一对应设置。需要说明的是,分束孔311和通孔320一一对应设置指的是,对应的分束孔311和通孔320用于通过同一粒子束12。另外,在具体设置时,矫正板组件32中所包含的矫正板的数量也可以根据不同需求进行对应设置。概括来说,矫正板组件32中可以包含N个堆叠设置的矫正板,其中,N为大于或等于1的整数。例如,矫正板组件32中可以仅包含一个矫正板,也可以包含两个或者更多个矫正板。Please continue to see Figure 2. In the embodiment provided by this application, the first correction plate 321, the second correction plate 322 and the third correction plate 323 are arranged parallel to each other, and the four through holes 320 on each correction plate are respectively arranged coaxially. It can be understood that during specific implementation, the number of through holes 320 in each correction plate can be matched according to the number of beam splitting holes 311 in the first beam splitting plate 31 . To summarize, when the first beam splitting plate 31 includes M beam splitting holes 311, M through holes 320 are provided in the first correcting plate 321, the second correcting plate 322 and the third correcting plate 323, and M The beam splitting holes 311 and the 3*M through holes 320 are arranged in one-to-one correspondence. It should be noted that the one-to-one arrangement of the beam splitting holes 311 and the through holes 320 means that the corresponding beam splitting holes 311 and the through holes 320 are used to pass the same particle beam 12 . In addition, during specific setting, the number of correction plates included in the correction plate assembly 32 can also be set accordingly according to different needs. In summary, the correction plate assembly 32 may include N correction plates arranged in a stack, where N is an integer greater than or equal to 1. For example, the correction plate assembly 32 may include only one correction plate, or may include two or more correction plates.
下面,将以矫正板组件32包含三个矫正板为例,对粒子束12的矫正过程进行具体说明。Below, the correction process of the particle beam 12 will be described in detail, taking the correction plate assembly 32 including three correction plates as an example.
请继续参阅图2。在对粒子束12进行调整时,三个矫正板可以独立的对粒子束12进 行调整。以最左侧的粒子束12为例,粒子束12在射入第一矫正板321的通孔320前,具有向左的倾斜角度。在经过通孔320时,第一矫正板321上的电极组件可以将粒子束12偏转成接近竖直的状态,从而使得粒子束12的传播方向与光轴平行。另外,在被矫正之前,由于粒子束12在传播过程中,存在向左的倾斜角度;因此,当粒子束12传播一定距离后,其中心与光轴之间存在一定的偏差。因此,需要对粒子束12的中心(也可以理解为粒子束的光斑位置)进行调整。具体来说,当粒子束12经过第二矫正板322的通孔320后,第二矫正板322上的电极组件可以将粒子束12偏转成具有向右倾斜角度的状态,使得粒子束12在传播过程中能够产生向右的偏移量。当粒子束12经过第三矫正板323的通孔320后,第三矫正板323上的电极组件可以将粒子束12偏转成接近竖直的状态,此时,粒子束12的传播方向与光轴重合。概括来说,通过第一矫正板321、第二矫正板322和第三矫正板323可以对粒子束的倾角进行逐步调整,以使粒子束12的传播方向与光轴平行。另外,还能够借助粒子束12的自身传播对粒子束12的位置进行调整,使粒子束12的中心与光轴重合。Please continue to see Figure 2. When adjusting the particle beam 12, the three correction plates can independently adjust the particle beam 12. Taking the leftmost particle beam 12 as an example, the particle beam 12 has an inclination angle to the left before being injected into the through hole 320 of the first correction plate 321 . When passing through the through hole 320, the electrode assembly on the first correction plate 321 can deflect the particle beam 12 to a nearly vertical state, so that the propagation direction of the particle beam 12 is parallel to the optical axis. In addition, before being corrected, the particle beam 12 has an inclination angle to the left during propagation; therefore, when the particle beam 12 propagates a certain distance, there is a certain deviation between its center and the optical axis. Therefore, the center of the particle beam 12 (which can also be understood as the spot position of the particle beam) needs to be adjusted. Specifically, when the particle beam 12 passes through the through hole 320 of the second correction plate 322, the electrode assembly on the second correction plate 322 can deflect the particle beam 12 to a state with a rightward tilt angle, so that the particle beam 12 propagates An offset to the right can be generated during the process. When the particle beam 12 passes through the through hole 320 of the third correction plate 323, the electrode assembly on the third correction plate 323 can deflect the particle beam 12 to a nearly vertical state. At this time, the propagation direction of the particle beam 12 is consistent with the optical axis. coincide. In summary, the inclination angle of the particle beam can be gradually adjusted through the first correction plate 321 , the second correction plate 322 and the third correction plate 323 so that the propagation direction of the particle beam 12 is parallel to the optical axis. In addition, the position of the particle beam 12 can also be adjusted by the self-propagation of the particle beam 12 so that the center of the particle beam 12 coincides with the optical axis.
在实际应用时,当粒子束12经过第一分束板321后,由于在不同位置处的粒子束12具有不同的倾斜角,因此,需要对每个粒子束12的倾角和位置进行不同程度的调节。例如,在图2中示出的四个粒子束12中,最左侧和最右侧的粒子束12的倾斜角较大,且两个粒子束12的倾斜角相反。位于中间的两个粒子束12的倾斜角较小,且两个粒子束12的倾斜角相反。因此,在具体实施时,每个粒子束12在经过矫正板组件32的通孔320时,每个通孔320内的电场强度和方向需要进行适应性调整,以使每个粒子束12被矫正后能够保持平行的关系,且能够对粒子束12的分布位置进行调整。In practical applications, when the particle beam 12 passes through the first beam splitting plate 321, since the particle beams 12 at different positions have different inclination angles, the inclination angle and position of each particle beam 12 need to be adjusted to varying degrees. adjust. For example, among the four particle beams 12 shown in FIG. 2 , the leftmost and rightmost particle beams 12 have larger inclination angles, and the two particle beams 12 have opposite inclination angles. The inclination angles of the two particle beams 12 located in the middle are smaller, and the inclination angles of the two particle beams 12 are opposite. Therefore, during specific implementation, when each particle beam 12 passes through the through hole 320 of the correction plate assembly 32, the electric field intensity and direction in each through hole 320 need to be adaptively adjusted so that each particle beam 12 is corrected. Finally, the parallel relationship can be maintained, and the distribution position of the particle beam 12 can be adjusted.
可以理解的是,在具体实施时,矫正板组件32中所包含的矫正板的数量可以根据实际需求进行灵活增减。另外,每个矫正板对粒子束12的偏转强度和方向也可以进行灵活设置。It can be understood that during specific implementation, the number of correction plates included in the correction plate assembly 32 can be flexibly increased or decreased according to actual needs. In addition, the deflection intensity and direction of the particle beam 12 by each correction plate can also be flexibly set.
例如,如图3所示,在本申请提供的另一个实施例中,矫正板组件32中包含六个堆叠设置的矫正板。分别为第一矫正板321、第二矫正板322、第三矫正板323、第四矫正板324、第五矫正板325和第六矫正板326。其中,第一矫正板321、第二矫正板322、第三矫正板323和第四矫正板324用于向粒子束12产生向左的电场力,以使粒子束12的倾角逐渐向左偏转。第五矫正板325和第六矫正板326用于向粒子束12产生向右的电场力,以使粒子束12的倾角逐渐向右偏转。最终使粒子束12的中心与光轴重合。For example, as shown in FIG. 3 , in another embodiment provided by this application, the correction plate assembly 32 includes six correction plates arranged in a stack. They are the first correction plate 321, the second correction plate 322, the third correction plate 323, the fourth correction plate 324, the fifth correction plate 325 and the sixth correction plate 326 respectively. Among them, the first correcting plate 321, the second correcting plate 322, the third correcting plate 323 and the fourth correcting plate 324 are used to generate a leftward electric field force to the particle beam 12, so as to gradually deflect the inclination angle of the particle beam 12 to the left. The fifth correcting plate 325 and the sixth correcting plate 326 are used to generate a rightward electric field force toward the particle beam 12 so as to gradually deflect the inclination angle of the particle beam 12 to the right. Finally, the center of the particle beam 12 coincides with the optical axis.
在本申请提供的实施例中,控制电路可以对每个电极组件的供电进行分别控制,从而可以对每个通孔320内的电场强度和方向进行分别控制,以有效提升粒子矫正器30的使用灵活性和适用范围。例如,当粒子源10所产生的初始粒子束11的束流有所变化后,每个粒子束12的倾角可能会产生不同的变化。具体来说,当某一个粒子束12的倾角产生变化后,控制电路可以对电极组件的供电进行控制,以通过改变电场强度或方向的方式对倾角产生变化后的粒子束进行适应性矫正。其中,控制电路对电极组件的供电控制包括但不限于:对电极组件的供断电状态、所形成的电场大小、电场方向等进行控制。In the embodiment provided in this application, the control circuit can separately control the power supply of each electrode assembly, so that the intensity and direction of the electric field in each through hole 320 can be separately controlled to effectively improve the use of the particle corrector 30 Flexibility and scope of application. For example, when the beam current of the initial particle beam 11 generated by the particle source 10 changes, the inclination angle of each particle beam 12 may change differently. Specifically, when the inclination angle of a certain particle beam 12 changes, the control circuit can control the power supply of the electrode assembly to adaptively correct the particle beam after the inclination angle changes by changing the intensity or direction of the electric field. The power supply control of the electrode assembly by the control circuit includes but is not limited to: controlling the power supply and off state of the electrode assembly, the size of the electric field formed, the direction of the electric field, etc.
在具体实施时,每个电极组件中可以包括多个电极,从而可以产生更均匀和更多方向的电场。In specific implementations, each electrode assembly may include multiple electrodes, thereby generating a more uniform and more directional electric field.
例如,如图4所示。以第一矫正板321为例,在本申请提供的一个实施例中,每个电极组件可以包括八个电极34(图中标示出一个),且八个电极34设置在通孔320的外围。 在具体实施时,八个电极34可以沿通孔320的中心轴均匀布设,也可以根据不同需求对每个电极34的位置进行适应性调整。可以理解的是,在具体设置时,电极34并不仅限于设置在通孔320的外围,还可以设置在通孔320内壁或附近的其他位置;即只需保证电极组件能够在对应的通孔320内产生电场即可。For example, as shown in Figure 4. Taking the first correction plate 321 as an example, in one embodiment provided in this application, each electrode assembly may include eight electrodes 34 (one is marked in the figure), and the eight electrodes 34 are arranged on the periphery of the through hole 320 . In specific implementation, the eight electrodes 34 can be evenly distributed along the central axis of the through hole 320, or the position of each electrode 34 can be adaptively adjusted according to different needs. It can be understood that during specific arrangement, the electrode 34 is not limited to being arranged on the periphery of the through hole 320 , but can also be arranged on the inner wall of the through hole 320 or other locations near it; that is, it only needs to ensure that the electrode assembly can be positioned in the corresponding through hole 320 Just generate an electric field inside.
另外,控制电路可以对每个电极34的供电进行独立控制,从而可以对每个通孔320内的电场方向、强度等参数进行精准的控制。即通过多个电极34以及控制电路,可以在垂直于通孔320的轴心方向产生任意方向的电场(或者也可以理解为电场的方向可以在垂直于通孔320轴心的平面内360°旋转),因此,可以对粒子束12产生任意方向的偏转和位置偏移。In addition, the control circuit can independently control the power supply of each electrode 34, so that parameters such as the direction and intensity of the electric field in each through hole 320 can be accurately controlled. That is, through the plurality of electrodes 34 and the control circuit, an electric field in any direction can be generated in a direction perpendicular to the axis of the through hole 320 (or it can also be understood that the direction of the electric field can be rotated 360° in a plane perpendicular to the axis of the through hole 320 ), therefore, the particle beam 12 can be deflected and positioned in any direction.
在具体设置时,电极组件的所在平面可以垂直于通孔320的中心轴,以在通孔320内能够产生垂直于通孔320的中心轴方向的电场。In a specific arrangement, the plane of the electrode assembly may be perpendicular to the central axis of the through hole 320 , so that an electric field perpendicular to the central axis of the through hole 320 can be generated in the through hole 320 .
例如,如图5所示,电极组件中包括八个环形阵列设置的电极34。八个电极34的所在平面平行于第一矫正板321的板面。具体来说,通孔320的中心轴是垂直于第一矫正板321的板面的,因此,八个电极34的所在平面平行于第一矫正板321的板面时,电极组件的所在平面是垂直于通孔320的中心轴的,从而能够在通孔320内产生垂直于通孔320的中心轴方向的电场。其中,电极组件的所在平面可以是平行于第一矫正板321的任意平面。例如,电极组件的所在平面可以与第一矫正板321的其中任一板面重合,也可以是第一矫正板321的两个板面的中心对称面。当需要将粒子(电子)束向第一方向偏转一定倾角时,控制电路可以向每个电极34通一定的电压,以在通孔320内形成与第一方向相反的匀强电场,从而使粒子束12向第一方向进行偏转。其中,第一方向指的是在垂直于通孔320的轴心的任意方向。For example, as shown in FIG. 5 , the electrode assembly includes eight electrodes 34 arranged in a circular array. The planes of the eight electrodes 34 are parallel to the surface of the first correction plate 321 . Specifically, the central axis of the through hole 320 is perpendicular to the surface of the first correction plate 321. Therefore, when the plane of the eight electrodes 34 is parallel to the surface of the first correction plate 321, the plane of the electrode assembly is Perpendicular to the central axis of the through hole 320 , an electric field perpendicular to the central axis of the through hole 320 can be generated in the through hole 320 . The plane of the electrode assembly may be any plane parallel to the first correction plate 321 . For example, the plane of the electrode assembly may coincide with any one of the surfaces of the first correction plate 321 , or may be the central symmetry plane of the two surfaces of the first correction plate 321 . When it is necessary to deflect the particle (electron) beam to a certain inclination angle in the first direction, the control circuit can pass a certain voltage to each electrode 34 to form a uniform electric field opposite to the first direction in the through hole 320, so that the particles Beam 12 is deflected in a first direction. The first direction refers to any direction perpendicular to the axis of the through hole 320 .
可以理解的是,在具体实施时,控制电路可以根据不同的需求,对每个电极34的通电状态进行灵活控制,在此不作赘述。It can be understood that during specific implementation, the control circuit can flexibly control the energization state of each electrode 34 according to different requirements, which will not be described again here.
另外,在本申请提供的实施例中,通过矫正板组件32还可以对粒子束12的像散进行调整。In addition, in the embodiment provided in this application, the astigmatism of the particle beam 12 can also be adjusted through the correction plate assembly 32 .
具体来说,如图6所示。在实际应用中,粒子束12在X方向和Y方向的发散角可能不相同,如果不加以纠正,会使粒子束12逐渐变形为椭圆形。另外,在整个粒子系统中,每个部件(如电磁透镜)由于具有一定的加工误差,并且在各部件的装配过程中也可能会出现装配误差。这些误差也会加大粒子束的像散问题。Specifically, as shown in Figure 6. In practical applications, the divergence angles of the particle beam 12 in the X direction and the Y direction may be different. If not corrected, the particle beam 12 will gradually deform into an elliptical shape. In addition, in the entire particle system, each component (such as the electromagnetic lens) has certain processing errors, and assembly errors may also occur during the assembly process of each component. These errors will also increase the astigmatism problem of the particle beam.
如图6所示,当粒子束12在X方向的发散角较大、在Y方向的发散角较小时。控制电路可以向每个电极34通一定的电压,以形成矫正电场,从而纠正粒子束12的像散问题。其中,X方向和Y方向只是示意性的方向,在具体实施时,X方向和Y方向的角度并不作限制。即本申请实施例提供的粒子矫正器30可以对粒子束12任意方向的发散角进行矫正。As shown in FIG. 6 , when the divergence angle of the particle beam 12 in the X direction is large and the divergence angle in the Y direction is small. The control circuit can pass a certain voltage to each electrode 34 to form a correction electric field, thereby correcting the astigmatism problem of the particle beam 12 . Among them, the X direction and the Y direction are only schematic directions, and during specific implementation, the angle between the X direction and the Y direction is not limited. That is, the particle corrector 30 provided by the embodiment of the present application can correct the divergence angle of the particle beam 12 in any direction.
可以理解的是,在具体实施时,每个电极组件中所包含的电极的数量并不仅限于为上述的八个。例如,每个电极组件中可以包括2个、3个、4个或者更多个电极,且多个电极的位置排布可以根据实际情况进行灵活调整,本申请对此不作限定。It can be understood that during specific implementation, the number of electrodes included in each electrode assembly is not limited to the eight mentioned above. For example, each electrode assembly may include 2, 3, 4 or more electrodes, and the position arrangement of the multiple electrodes can be flexibly adjusted according to the actual situation, which is not limited in this application.
另外,在具体设置时,电极的形状也可以是多样的。In addition, during specific installation, the shapes of the electrodes can also be diverse.
例如,如图7所示,在本申请提供的一个实施例中,电极34为弧状结构。具体来说,请结合参阅图8,在垂直于通孔的中心轴的方向上,电极34的截面为弧形,且八个电极34内弧面均朝向通孔的轴心。For example, as shown in FIG. 7 , in one embodiment provided by this application, the electrode 34 has an arc-shaped structure. Specifically, please refer to FIG. 8 . In the direction perpendicular to the central axis of the through hole, the cross-section of the electrode 34 is arc-shaped, and the inner arc surfaces of the eight electrodes 34 are all facing the axis of the through hole.
如图9所示,在本申请提供的另一个实施例中,电极34为矩形的块状结构。具体来说,请结合参阅图10,在垂直于通孔的中心轴的方向上,电极34的截面为矩形。As shown in FIG. 9 , in another embodiment provided by this application, the electrode 34 has a rectangular block structure. Specifically, referring to FIG. 10 , the electrode 34 has a rectangular cross-section in a direction perpendicular to the central axis of the through hole.
如图11所示,在本申请提供的另一个实施例中,电极34为梯形的块状结构。具体来说,请结合参阅图12,在垂直于通孔的中心轴的方向上,电极34的截面为梯形。As shown in FIG. 11 , in another embodiment provided by this application, the electrode 34 has a trapezoidal block structure. Specifically, referring to FIG. 12 , the electrode 34 has a trapezoidal cross-section in a direction perpendicular to the central axis of the through hole.
可以理解的是,在其他的实施方式中,电极34的形状构造可以根据不同情况进行灵活设置,本申请对此不作限定。It can be understood that in other embodiments, the shape and structure of the electrode 34 can be flexibly set according to different situations, and this application is not limited thereto.
另外,如图13所示,在对粒子矫正器30进行具体设置时,除了可以包含第一分束板31和矫正板组件32以外,还可以包括第二分束板33。In addition, as shown in FIG. 13 , when the particle straightener 30 is specifically configured, in addition to the first beam splitting plate 31 and the straightening plate assembly 32 , it may also include a second beam splitting plate 33 .
具体来说,第二分束板33位于矫正板组件32的后端(图中的下端),且第二分束板33也具有分束孔331。在具体设置时,第一分束板31和第二分束板33的结构可以完全相同,也可以不同。另外,第一分束板31中的分束孔311、矫正板组件32中的通孔320以及第二分束板33中的分束孔331之间的相对关系可以是多样的。Specifically, the second beam splitting plate 33 is located at the rear end (lower end in the figure) of the correction plate assembly 32 , and the second beam splitting plate 33 also has a beam splitting hole 331 . In specific settings, the structures of the first beam splitting plate 31 and the second beam splitting plate 33 may be identical or different. In addition, the relative relationships between the beam splitting holes 311 in the first beam splitting plate 31 , the through holes 320 in the correction plate assembly 32 , and the beam splitting holes 331 in the second beam splitting plate 33 may be diverse.
例如,如图13所示,在本申请提供的一个实施例中,第一分束板31中的分束孔311和第二分束板33中的分束孔331的截面大小相同,且两个分束孔同轴设置。其中,分束孔311的截面大小指的是分束孔311的面积;相应的,第二分束孔331的截面大小指的是分束孔331的面积,通孔320的截面大小指的是通孔320的面积。For example, as shown in Figure 13, in one embodiment provided by this application, the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 have the same cross-sectional size, and the two beam splitting holes 311 and 331 in the second beam splitting plate 33 have the same cross-sectional size. The beam splitting holes are coaxially arranged. The cross-sectional size of the beam splitting hole 311 refers to the area of the beam splitting hole 311; correspondingly, the cross-sectional size of the second beam splitting hole 331 refers to the area of the beam splitting hole 331, and the cross-sectional size of the through hole 320 refers to The area of the through hole 320.
可以理解的是,在其他的实施方式中,第一分束板31和第二分束板33也可以仅保留其中的一个。It can be understood that in other embodiments, only one of the first beam splitting plate 31 and the second beam splitting plate 33 may be retained.
例如,如图14所示,在本申请提供的一个实施例中,仅保留了第一分束板31,取消了第二分束板33。在对粒子束12进行处理时,第一分束板31可以对初始粒子束(图中未示出)进行分隔,之后,多个粒子束12再由矫正板组件32进行处理。具体来说,在图13和图14所示出的示例中,粒子束12是由光轴的位置进入通孔320内的,由于粒子束12具有一定的倾角,因此,在向下传播的过程中会产生向右的偏移量。另外,由于在越靠近通孔320内壁的位置,电场的均匀性越差,因此,为了保证粒子束12的品质,粒子束12的横向偏移量有一定的限制。或者,通孔320内径的最小尺寸有一定的限制。For example, as shown in FIG. 14 , in one embodiment provided by this application, only the first beam splitting plate 31 is retained and the second beam splitting plate 33 is cancelled. When processing the particle beam 12 , the first beam splitter plate 31 can separate the initial particle beam (not shown in the figure), and then the plurality of particle beams 12 are processed by the correction plate assembly 32 . Specifically, in the examples shown in FIGS. 13 and 14 , the particle beam 12 enters the through hole 320 from the position of the optical axis. Since the particle beam 12 has a certain inclination angle, during the downward propagation process will produce an offset to the right. In addition, since the closer to the inner wall of the through hole 320 is, the uniformity of the electric field becomes worse. Therefore, in order to ensure the quality of the particle beam 12 , there is a certain limit on the lateral offset of the particle beam 12 . Alternatively, the minimum size of the inner diameter of the through hole 320 is limited.
另外,如图15所示,在一些实施方式中,也可以仅保留第二分束板33,而取消第一分束板31。在对粒子束12进行处理时,矫正板组件32可以先对初始粒子束(图中未示出)进行分隔,并对粒子束12进行矫正。在处理过程中,由于在越靠近电极(或通孔320的内壁)的位置,电场的均匀性越差,因此会使粒子束12产生像差等不良问题。因此,为了获得较高品质的粒子束12,第二分束板33可以对粒子束12进行过滤,以将粒子束12的远离电极的区域进行透出,将粒子束12的靠近电极的区域进行阻挡。同时,还能有效提升系统的填充因子。In addition, as shown in FIG. 15 , in some embodiments, only the second beam splitting plate 33 may be retained and the first beam splitting plate 31 may be eliminated. When processing the particle beam 12 , the correction plate assembly 32 may first separate the initial particle beam (not shown in the figure) and correct the particle beam 12 . During the processing, since the closer the position is to the electrode (or the inner wall of the through hole 320 ), the uniformity of the electric field becomes worse, which causes aberration and other undesirable problems in the particle beam 12 . Therefore, in order to obtain a higher quality particle beam 12 , the second beam splitting plate 33 can filter the particle beam 12 to transmit the area of the particle beam 12 away from the electrode and to transmit the area of the particle beam 12 close to the electrode. block. At the same time, it can also effectively improve the filling factor of the system.
另外,如图16所示,当粒子矫正器30包含第一分束板31和第二分束板33时,第一分束板31中分束孔311的截面也可以大于第二分束板33中分束孔331的截面。In addition, as shown in FIG. 16 , when the particle corrector 30 includes a first beam splitting plate 31 and a second beam splitting plate 33 , the cross section of the beam splitting hole 311 in the first beam splitting plate 31 can also be larger than that of the second beam splitting plate. The cross section of the beam splitting hole 331 in 33.
具体来说,第一分束板31中的分束孔311和第二分束板33中的分束孔331同轴设置。第一分束板31用于对初始粒子束(图中未示出)进行分隔。第二分束板33用于对粒子束12进行过滤,以滤除粒子束12中过于靠近电极处的部分,从而有效保证粒子束12的品质。另外,还能提升粒子矫正器30的填充因子。Specifically, the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 are coaxially arranged. The first beam splitting plate 31 is used to separate the initial particle beam (not shown in the figure). The second beam splitting plate 33 is used to filter the particle beam 12 to filter out the part of the particle beam 12 that is too close to the electrode, thereby effectively ensuring the quality of the particle beam 12 . In addition, the filling factor of the particle straightener 30 can also be improved.
或者,第一分束板31中的分束孔311和第二分束板33中的分束孔331也可以不同轴设置。Alternatively, the beam splitting hole 311 in the first beam splitting plate 31 and the beam splitting hole 331 in the second beam splitting plate 33 may also be disposed asynchronously.
具体来说,如图17所示,在第一分束板31中,分束孔311可以向粒子束311的照射方向(图中的左向)偏移一定距离。当粒子束12穿过分束孔311后,由于具有一定的倾角,因此,在向下传播的过程中会产生向右的偏移量。由于在越靠近电极(或通孔320的内壁)的位置,电场的均匀性越差,因此会使粒子束12产生像差等问题。因此,将分束孔311向左偏移一定距离后,可以增加粒子束12在通孔320内的横向偏移距离,以降低电极对粒子束12产生的不良影响。另外,还能提升粒子矫正器30的填充因子。具体来说,在图15至图17所示出的示例中,最终得到的粒子束12是由偏离光轴的位置(图中偏左的位置)进入通孔320内的,且该部分粒子束12位于左侧位移上限和右侧位移上限之间,最终被矫正回光轴的位置,因此,增加了粒子束12的横向偏移量。或者,有利于降低通孔320内径的最小尺寸,因此,有利于提升矫正器30的填充因子。Specifically, as shown in FIG. 17 , in the first beam splitting plate 31 , the beam splitting hole 311 may be shifted by a certain distance toward the irradiation direction of the particle beam 311 (left direction in the figure). When the particle beam 12 passes through the beam splitting hole 311, it has a certain inclination angle, so it will shift to the right during its downward propagation. Since the uniformity of the electric field becomes worse at a position closer to the electrode (or the inner wall of the through hole 320 ), problems such as aberration may occur in the particle beam 12 . Therefore, after shifting the beam splitting hole 311 to the left by a certain distance, the lateral shifting distance of the particle beam 12 in the through hole 320 can be increased to reduce the adverse effects of the electrode on the particle beam 12 . In addition, the filling factor of the particle straightener 30 can also be improved. Specifically, in the examples shown in FIGS. 15 to 17 , the final particle beam 12 enters the through hole 320 from a position deviated from the optical axis (the left position in the figure), and this part of the particle beam 12 is located between the upper limit of displacement on the left and the upper limit of displacement on the right, and is eventually corrected back to the position of the optical axis. Therefore, the lateral offset of the particle beam 12 is increased. Alternatively, it is beneficial to reduce the minimum size of the inner diameter of the through hole 320 , and therefore, it is beneficial to increase the filling factor of the orthotic device 30 .
可以理解的是,在其他的实施方式中,第一分束板31的分束孔311和第二分束板33的分束孔331的截面大小可以根据不同需求进行适应性调整。另外,第一分束板31中的分束孔311与矫正板组件32中的通孔320可以同轴设置,也可以不同轴设置。相应的,第二分束板33中的分束孔331与矫正板组件32中的通孔320可以同轴设置,也可以不同轴设置。本申请对此不作限定。It can be understood that in other embodiments, the cross-sectional sizes of the beam splitting holes 311 of the first beam splitting plate 31 and the beam splitting holes 331 of the second beam splitting plate 33 can be adaptively adjusted according to different needs. In addition, the beam splitting hole 311 in the first beam splitting plate 31 and the through hole 320 in the correction plate assembly 32 may be arranged coaxially or not. Correspondingly, the beam splitting hole 331 in the second beam splitting plate 33 and the through hole 320 in the correction plate assembly 32 can be arranged coaxially or asynchronously. This application does not limit this.
另外,如图18所示,本申请实施例还提供了一种粒子系统。包括:粒子源10、准直透镜20和上述的粒子矫正器30。粒子源10用于产生初始粒子束11;准直透镜20用于对初始粒子束11进行准直,以使初始粒子束11在到达粒子矫正器30时,能够处于平行或接近平行的状态。粒子矫正器30用于对初始粒子束11进行分隔,以形成多个(图中示出有四个)粒子束12,并可以对每个粒子束12的倾角、偏移量、像散等参数进行调节。当粒子束12汇聚到样品01后,可以对样品01的进行较高精度的成像、检测、曝光等处理。In addition, as shown in Figure 18, embodiments of the present application also provide a particle system. It includes: particle source 10, collimating lens 20 and the above-mentioned particle corrector 30. The particle source 10 is used to generate the initial particle beam 11; the collimating lens 20 is used to collimate the initial particle beam 11, so that the initial particle beam 11 can be in a parallel or nearly parallel state when it reaches the particle corrector 30. The particle corrector 30 is used to separate the initial particle beam 11 to form multiple (four are shown in the figure) particle beams 12, and can adjust the inclination, offset, astigmatism and other parameters of each particle beam 12. Make adjustments. When the particle beam 12 converges on the sample 01, higher-precision imaging, detection, exposure and other processing can be performed on the sample 01.
在具体实施时,准直透镜20可以是电磁透镜。可以通过电场或磁场对初始粒子束11进行聚焦或发散,从而实现其准直的作用。在具体应用时,准直透镜的类型和结构本申请不作限制。In specific implementation, the collimating lens 20 may be an electromagnetic lens. The initial particle beam 11 can be focused or diverged through an electric field or a magnetic field, thereby achieving its collimating effect. In specific applications, the type and structure of the collimating lens are not limited in this application.
另外,如图18所示,为了将粒子束12更好的汇聚到样品01上,粒子系统中还可以包含聚焦透镜40。聚焦透镜40中可以包含四组聚焦单元41,每组聚焦单元41用于对单个粒子束12进行聚焦,以将粒子束12有效的聚焦在样品01上。另外,由于每个粒子束12分别通过独立的聚焦单元41进行聚焦,因此,可以对每个粒子束12进行专属聚焦,以提升聚焦效果,使粒子束12阵列更均一。另外,还能防止粒子束12之间相互交叉,避免了不同粒子束12之间的相互影响。In addition, as shown in FIG. 18 , in order to better focus the particle beam 12 on the sample 01 , the particle system may also include a focusing lens 40 . The focusing lens 40 may include four groups of focusing units 41 , and each group of focusing units 41 is used to focus a single particle beam 12 so as to effectively focus the particle beam 12 on the sample 01 . In addition, since each particle beam 12 is focused by an independent focusing unit 41, each particle beam 12 can be focused exclusively to improve the focusing effect and make the array of particle beams 12 more uniform. In addition, it can also prevent particle beams 12 from crossing each other and avoid mutual influence between different particle beams 12 .
以上,仅为本申请的具体实施方式,但本申请的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本申请揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本申请的保护范围之内。因此,本申请的保护范围应以权利要求的保护范围为准。The above are only specific embodiments of the present application, but the protection scope of the present application is not limited thereto. Any person familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, and all of them should be covered. within the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims (16)

  1. 一种粒子矫正器,其特征在于,包括:A particle corrector, which is characterized by including:
    第一分束板,所述第一分束板具有M个分束孔;A first beam splitting plate, the first beam splitting plate has M beam splitting holes;
    矫正板组件,设置在所述第一分束板的一侧;a correction plate assembly, arranged on one side of the first beam splitting plate;
    所述矫正板组件包括N个堆叠设置的矫正板,每个所述矫正板具有M个通孔和M个电极组件,M个所述分束孔与M个所述通孔一一对应设置,且M个所述电极组件与M个所述通孔一一对应设置;其中,每个电极组件用于在对应的所述通孔内产生矫正电场;The correction plate assembly includes N stacked correction plates, each of the correction plates has M through holes and M electrode assemblies, and the M beam splitting holes are arranged in one-to-one correspondence with the M through holes. And M electrode assemblies are arranged in one-to-one correspondence with M through holes; wherein, each electrode assembly is used to generate a correction electric field in the corresponding through hole;
    其中,M为大于或等于1的整数,N为大于或等于1的整数。Among them, M is an integer greater than or equal to 1, and N is an integer greater than or equal to 1.
  2. 根据权利要求1所述的粒子矫正器,其特征在于,还包括控制电路,所述控制电路与所述M个电极组件电连接,用于对所述M个电极组件的供电进行分别控制;The particle corrector according to claim 1, further comprising a control circuit electrically connected to the M electrode assemblies for separately controlling the power supply of the M electrode assemblies;
    其中,所述控制电路对所述电极组件的供电控制包括:对电极组件的供断电状态、所形成的电场的大小、电场方向进行控制。Wherein, the power supply control of the electrode assembly by the control circuit includes: controlling the power supply and off state of the electrode assembly, the size of the electric field formed, and the direction of the electric field.
  3. 根据权利要求1或2所述的粒子矫正器,其特征在于,所述电极组件的所在平面垂直于所述通孔的中心轴。The particle corrector according to claim 1 or 2, characterized in that the plane of the electrode assembly is perpendicular to the central axis of the through hole.
  4. 根据权利要求1至3中任一所述的粒子矫正器,其特征在于,所述分束孔的截面小于所述通孔的截面。The particle corrector according to any one of claims 1 to 3, characterized in that the cross section of the beam splitting hole is smaller than the cross section of the through hole.
  5. 根据权利要求1至4中任一所述的粒子矫正器,其特征在于,所述第一分束板上的分束孔与对应的所述通孔不同轴设置。The particle corrector according to any one of claims 1 to 4, characterized in that the beam splitting hole on the first beam splitting plate is arranged non-axially with the corresponding through hole.
  6. 根据权利要求1至5中任一所述的粒子矫正器,其特征在于,还包括第二分束板,所述第二分束板设置在所述矫正板组件的远离所述第一分束板的一侧;The particle corrector according to any one of claims 1 to 5, further comprising a second beam splitting plate, the second beam splitting plate being disposed on the correction plate assembly away from the first beam splitting plate. one side of the board;
    所述第二分束板具有M个分束孔,M个所述分束孔与M个所述通孔一一对应设置。The second beam splitting plate has M beam splitting holes, and the M beam splitting holes and the M through holes are arranged in one-to-one correspondence.
  7. 根据权利要求6所述的粒子矫正器,其特征在于,所述第一分束板设置在所述矫正板组件的前端,所述第二分束板设置在所述矫正板组件的后端;The particle corrector according to claim 6, wherein the first beam splitting plate is provided at the front end of the correction plate assembly, and the second beam splitting plate is provided at the rear end of the correction plate assembly;
    其中,所述矫正板组件的前端为矫正板组件接收粒子束的一侧,所述矫正板组件的后端为矫正板组件透出粒子束的一侧。Wherein, the front end of the correction plate assembly is the side from which the correction plate assembly receives the particle beam, and the rear end of the correction plate assembly is the side from which the correction plate assembly transmits the particle beam.
  8. 根据权利要求6或7所述的粒子矫正器,其特征在于,所述第二分束板上的分束孔与所述通孔同轴设置。The particle corrector according to claim 6 or 7, characterized in that the beam splitting hole on the second beam splitting plate is coaxially arranged with the through hole.
  9. 根据权利要求6至8中任一所述的粒子矫正器,其特征在于,所述第一分束板的分束通孔的截面大小大于或等于所述第二分束板的分束孔截面大小。The particle straightener according to any one of claims 6 to 8, characterized in that the cross-sectional size of the beam-splitting through hole of the first beam-splitting plate is greater than or equal to the cross-section of the beam-splitting hole of the second beam-splitting plate. size.
  10. 根据权利要求1至9中任一项所述的粒子矫正器,其特征在于,每个所述电极组件包括多个电极,多个所述电极绕所述通孔的轴心阵列设置。The particle corrector according to any one of claims 1 to 9, wherein each electrode assembly includes a plurality of electrodes, and the plurality of electrodes are arranged in an array around the axis of the through hole.
  11. 根据权利要求10所述的粒子矫正器,其特征在于,所述控制电路用于对每个电极的供电进行分别控制;The particle corrector according to claim 10, characterized in that the control circuit is used to control the power supply of each electrode separately;
    其中,所述控制电路对所述电极的供电控制包括:对电极的供断电状态、所形成的电场的大小进行控制。Wherein, the power supply control of the electrode by the control circuit includes: controlling the power supply and off state of the electrode and the size of the electric field formed.
  12. 根据权利要求10或11所述的粒子矫正器,其特征在于,在每个所述电极组件中,多个所述电极设置在对应的所述通孔的内壁。The particle corrector according to claim 10 or 11, characterized in that in each of the electrode assemblies, a plurality of the electrodes are provided on the inner wall of the corresponding through hole.
  13. 根据权利要求12所述的粒子矫正器,其特征在于,在每个所述电极组件中,多 个所述电极沿所述对应的所述通孔的轴心环形阵列设置。The particle corrector according to claim 12, wherein in each of the electrode assemblies, a plurality of the electrodes are arranged in an annular array along the axis of the corresponding through hole.
  14. 根据权利要求1至13中任一所述的粒子矫正器,其特征在于,在垂直于所述通孔的轴心的方向上,所述电极的截面为方形、矩形、弧形或梯形。The particle straightener according to any one of claims 1 to 13, characterized in that, in a direction perpendicular to the axis of the through hole, the cross-section of the electrode is square, rectangular, arc-shaped or trapezoidal.
  15. 一种粒子系统,其特征在于,包括粒子源、准直透镜和权利要求1至14中任一所述的粒子矫正器,且所述准直透镜位于所述粒子源和所述粒子矫正器之间。A particle system, characterized in that it includes a particle source, a collimating lens and the particle corrector according to any one of claims 1 to 14, and the collimating lens is located between the particle source and the particle corrector. between.
  16. 根据权利要求15所述的粒子系统,其特征在于,还包括聚焦透镜,所述聚焦透镜包括M组聚焦单元,且M组所述聚焦单元与M个所述通孔一一对应设置。The particle system according to claim 15, further comprising a focusing lens, the focusing lens including M groups of focusing units, and the M groups of focusing units are arranged in one-to-one correspondence with the M through holes.
PCT/CN2022/086035 2022-04-11 2022-04-11 Particle corrector and particle system WO2023197099A1 (en)

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CN103620693A (en) * 2011-04-27 2014-03-05 迈普尔平版印刷Ip有限公司 Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams
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CN113169017A (en) * 2018-10-01 2021-07-23 卡尔蔡司MultiSEM有限责任公司 Multi-beam particle beam system and method of operating the same
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620693A (en) * 2011-04-27 2014-03-05 迈普尔平版印刷Ip有限公司 Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams
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CN113169017A (en) * 2018-10-01 2021-07-23 卡尔蔡司MultiSEM有限责任公司 Multi-beam particle beam system and method of operating the same
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