WO2023191159A1 - Ensemble intégré intelligent et dispositif de transfert pour dispositifs électroluminescents à semi-conducteurs - Google Patents

Ensemble intégré intelligent et dispositif de transfert pour dispositifs électroluminescents à semi-conducteurs Download PDF

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Publication number
WO2023191159A1
WO2023191159A1 PCT/KR2022/004746 KR2022004746W WO2023191159A1 WO 2023191159 A1 WO2023191159 A1 WO 2023191159A1 KR 2022004746 W KR2022004746 W KR 2022004746W WO 2023191159 A1 WO2023191159 A1 WO 2023191159A1
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WIPO (PCT)
Prior art keywords
substrate
assembly
semiconductor light
light emitting
emitting device
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PCT/KR2022/004746
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English (en)
Korean (ko)
Inventor
안기태
심봉주
조현우
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엘지전자 주식회사
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Priority to PCT/KR2022/004746 priority Critical patent/WO2023191159A1/fr
Publication of WO2023191159A1 publication Critical patent/WO2023191159A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the embodiment relates to an intelligent assembly and transfer integration device for semiconductor light emitting devices.
  • a micro-LED display is a display that uses micro-LED, a semiconductor light emitting device with a diameter or cross-sectional area of 100 ⁇ m or less, as a display element.
  • micro-LED displays use micro-LEDs as display elements, they have excellent performance in contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.
  • the micro-LED display has the advantage of being able to freely adjust the size and resolution because the screen can be separated and combined in a modular manner, and also has the advantage of being able to implement a flexible display.
  • micro-LED displays require more than millions of semiconductor light-emitting devices, there is a technical problem that makes it difficult to quickly and accurately transfer the semiconductor light-emitting devices to the display panel.
  • Transfer technologies that have been recently developed include the pick and place process, laser lift-off method, or self-assembly method.
  • the self-assembly method is a technology in which semiconductor light-emitting devices find their own assembly position within a fluid, and is advantageous for the implementation of large-screen display devices.
  • U.S. Patent No. 9,825,202 proposed a micro-LED structure suitable for self-assembly, but there is still insufficient research on technology for manufacturing displays by self-assembly of micro-LEDs.
  • the assembly transfer integration device using undisclosed internal technology is equipped with a flexible assembly board on the rotating roller for self-assembly, and the semiconductor light-emitting devices distributed in the bath are self-assembled on the flexible assembly board through magnetic and electric fields and then used as a display panel board or It can be transferred in-line to the donor substrate.
  • internal technology's assembly and transfer integration device multiple simultaneous assemblies are possible, and the assembly and transfer process can be integrated within a certain period of time regardless of area.
  • the panel board or donor board is placed on the upper side of the assembly and transfer integration device, so the panel board including the TFT backplane must be placed upside down, and a process to turn the panel board over again after transfer is necessary. do. Accordingly, there is a problem that additional units or devices are required in order for the assembly and transfer integration device of internal technology to be applied to the existing display panel process.
  • the transfer process is carried out with the panel substrate turned over, so as the area of the panel substrate increases, there is an issue of sagging of the panel substrate.
  • the electrode part of the assembled substrate is in contact with the electrode part placed on the side wall of the bath to receive power.
  • the electrode portion of the assembled substrate slides while in surface contact with the electrode portion disposed on the side wall of the bath, mutual friction occurs, causing damage to the electrode portion of the assembled substrate.
  • One of the technical challenges of the embodiment is to provide an intelligent assembly and transfer integration device that can simultaneously improve transfer speed and transfer yield when transferring semiconductor light emitting devices to a display panel.
  • the embodiment is intended to provide an intelligent assembly and transfer integration device that can solve the problem of the transfer process proceeding with the panel substrate including the TFT backplane upside down in the assembly and transfer integration device of internal technology.
  • the embodiment is intended to provide an intelligent assembly and transfer integration device that can solve the problem of sagging of the panel substrate as the area of the panel substrate increases in the assembly and transfer integration device of internal technology.
  • one of the technical challenges of the embodiment is that in the assembly and transfer integration device of the internal technology, the electrode portion of the assembled substrate slides while in surface contact with the electrode portion of the chamber, so mutual friction occurs, causing damage to the electrode portion of the assembled substrate or the water tank electrode portion.
  • the goal is to provide an intelligent assembly and transfer integrated device that can solve problems that arise.
  • An intelligent assembly and transfer integration device includes a fluid chamber accommodating a semiconductor light-emitting device, a substrate driver that drives an assembly substrate on which the semiconductor light-emitting device is assembled, and a magnetic force disposed on the assembly substrate to apply magnetic force to the semiconductor light-emitting device. It may include a magnet head unit that applies a , a display panel substrate disposed below the assembly substrate onto which the assembled semiconductor light emitting device is transferred, and a panel driver that horizontally moves the panel substrate.
  • the embodiment may further include an assembly inspection unit that inspects the semiconductor light emitting device assembled on the assembly substrate.
  • the embodiment may further include a suction device disposed on one side of the assembly inspection unit and removing a semiconductor light emitting device on an error line by the assembly inspection unit.
  • the embodiment may further include a panel chuck that moves the panel substrate up and down.
  • a transfer hole for transferring the semiconductor light emitting device may face upward with respect to the ground.
  • the embodiment may further include a chamber chuck disposed below the fluid chamber.
  • the embodiment may further include a chamber driver disposed below the fluid chamber.
  • the chamber driver moves the fluid chamber upward, downward, or horizontally, and may collect fluid flowing out of the fluid chamber.
  • the embodiment may further include a chip supply unit detachable from one side of the fluid chamber.
  • the chip supply unit includes a supply body, a first inlet, a first extension part extending from one side of the supply body part, a second inlet part, and a second extension part extending from the other side of the supply body part. It can be included.
  • the supply body part may include a movement recess that serves as a movement path for the supplied semiconductor light emitting device.
  • the chip supply unit may include a magnet bar disposed below the supply body portion and a plurality of magnets disposed on the magnet bar at positions corresponding to the first input port or the second input port.
  • the substrate driving unit includes the first substrate roller portion disposed inside one side of the assembled substrate, the second substrate roller portion disposed inside the other side of the assembled substrate, and the third substrate disposed outside the lower side of the assembled substrate. It may include a roller unit.
  • an intelligent assembly and transfer integration device includes a fluid chamber for accommodating a semiconductor light-emitting device within a water tank frame, a substrate driver for driving an assembly substrate on which the semiconductor light-emitting device is assembled, and disposed on the assembly substrate.
  • a magnet head portion that applies magnetic force to the semiconductor light emitting device, a variable water tank electrode portion that is disposed on the water tank frame of the fluid chamber and applies power to the assembled substrate, and a variable water tank electrode portion that is disposed below the assembled substrate to emit light from the assembled semiconductor. It may include a display panel substrate onto which elements are transferred and a panel driver that horizontally moves the panel substrate.
  • the variable water tank electrode portion may include a first variable water tank electrode portion disposed on one side of the water tank frame and a second variable water tank electrode portion disposed on the other side of the water tank frame.
  • the variable water tank electrode unit may include a flat electrode unit and a plurality of round electrode units extending laterally from the flat electrode unit.
  • the embodiment may further include an assembly inspection unit that inspects a semiconductor light emitting device assembled on the assembly substrate, and a suction device disposed on one side of the assembly inspection unit and removing a semiconductor light emitting device on an error line by the assembly inspection unit.
  • the embodiment further includes a panel chuck that moves the panel substrate up and down, and the panel substrate may have a transfer hole for transferring the semiconductor light emitting device facing upward with respect to the ground.
  • an intelligent assembly and transfer integration device includes a fluid chamber accommodating a semiconductor light emitting device within a water tank frame, a chip supply passage mounted on a first side of the water tank frame, and a second side of the water tank frame. a fluid discharge path, a substrate driver for driving an assembled substrate on which the semiconductor light emitting device is assembled, a magnet head portion disposed on the assembled substrate to apply magnetic force to the semiconductor light emitting device, and disposed on a lower side of the assembled substrate. It may include a display panel substrate onto which the assembled semiconductor light emitting device is transferred, and a panel driver that horizontally moves the panel substrate.
  • the embodiment may further include a variable water tank electrode unit disposed on the water tank frame of the fluid chamber and applying power to the assembled substrate.
  • the embodiment further includes a panel chuck that moves the panel substrate up and down, and the panel substrate may have a transfer hole for transferring the semiconductor light emitting device facing upward with respect to the ground.
  • the intelligent assembly and transfer integration device for semiconductor light emitting devices there is a technical effect of simultaneously improving the transfer speed and transfer yield when transferring semiconductor light emitting devices to a display panel.
  • the semiconductor light emitting devices 150 are assembled on a transfer substrate 210, and the assembled semiconductor light emitting devices 150 are in-line transferred to a panel substrate 910. By transcribing immediately, the transcription speed can be significantly improved.
  • the semiconductor light emitting devices 150 assembled on the transfer substrate 210 are inspected in real time and then selectively transferred to the panel substrate 910 only if they are normal, thereby significantly increasing the transfer yield. . Accordingly, according to the embodiment, there is a special technical effect that can solve the problem of technical contradiction between the transfer speed and the transfer yield by increasing the transfer speed and the transfer yield at the same time.
  • a line may be transferred in the width direction of the assembled substrate 210 at a portion where the assembled substrate 210 and the flat panel substrate 910 meet.
  • only semiconductor light emitting devices on a fully assembled line without defects selected through assembly inspection are transferred, so it is possible to achieve 100% transfer yield.
  • the transfer hole in the panel substrate 910 is facing upward, consistent with the panel orientation in the existing display process, and the transfer process is performed with the panel substrate including the TFT backplane turned over in the assembly and transfer integration device of internal technology.
  • the display panel substrate 910 is placed below the assembly substrate 210, and the panel substrate 910 is supported by the panel chuck 920, so that the panel substrate is bent when manufacturing a large-area display. There are special technical effects that do not apply.
  • the electrode portion of the assembled substrate slides while in surface contact with the electrode portion of the water tank, thereby generating mutual friction, thereby solving the problem of damage to the electrode portion of the assembled substrate.
  • the movable round electrode parts 351b support each other even when subjected to a predetermined friction pressure. It has the technical effect of maintaining structural stability and reliability.
  • the substrate electrode portion 210e of the assembled substrate 210 is in line contact with the first and second bath electrode portions 351 and 352 disposed on the side wall of the bath. Since sliding occurs in a point contact state, mutual friction is significantly reduced, thereby solving the problem of damage to the substrate electrode portion 210e and the first and second water tank electrode portions 351 and 352 of the assembled substrate. There are special technical effects.
  • the third fluid chamber 310C includes a chip supply passage 317A mounted on the first side of the water tank frame 310F and a fluid discharge path 317B mounted on the second side of the water tank frame 310F.
  • a special technical effect of supplying semiconductor light-emitting devices to the fluid chamber in real time is achieved by supplying the fluid in which the semiconductor light-emitting devices 150 are dispersed to the water tank frame 310F through the chip supply passage 317A. there is.
  • the assembly process and the transfer process are separated but connected in-line, so there is no limitation on the transfer area depending on the size of the assembly system.
  • a high chamfering rate can be secured when chamfering a small area after a large-area process.
  • FIG. 1 is a diagram of a living room of a house where a display device 100 according to an embodiment is placed.
  • Figure 2a is an enlarged view of area A1 in Figure 1.
  • Figure 2b is a cross-sectional view of area A2 in Figure 2a.
  • Figure 3 is a conceptual diagram of an intelligent assembly and transfer integration device 1000 according to an embodiment.
  • FIG. 4 is a diagram illustrating an example in which the semiconductor light emitting device 150 is assembled on the assembly substrate 210 by a self-assembly method in the embodiment.
  • Figure 5 is a perspective view of the chip supply unit in the intelligent assembly and transfer integration device 1000 according to an embodiment.
  • Figures 6a and 6b are diagrams illustrating operations using the intelligent assembly and transfer integration device 1000 according to an embodiment.
  • Figure 7 is an example of operation using the intelligent assembly and transfer integration device 1002 according to the second embodiment.
  • FIG. 8 is a conceptual diagram of the second fluid chamber 310B in the intelligent assembly and transfer integration device 1002 shown in FIG. 7.
  • FIG. 9 is an exemplary diagram of the first state of the third area A3 of the intelligent assembly and transfer integration device 1002 according to the second embodiment shown in FIG. 7.
  • FIG. 10 is a diagram illustrating a second state of the third area A3 of the intelligent assembly and transfer integration device 1002 according to the second embodiment shown in FIG. 7.
  • FIG. 11 is a conceptual diagram of the third fluid chamber 310C in the intelligent assembly and transfer integration device 1002 shown in FIG. 8.
  • Display devices described in this specification include digital TVs, mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation, and slates. ) may include PCs, tablet PCs, ultra-books, desktop computers, etc. Additionally, the embodiments described in this specification can be applied to devices capable of displaying even new product types that are developed in the future.
  • FIG. 1 shows a living room of a house where a display device 100 according to an embodiment is installed.
  • the display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a robot vacuum cleaner 102, and an air purifier 103, and can communicate with each electronic product based on IOT, and can communicate with the user. Each electronic product can also be controlled based on the setting data.
  • the display device 100 may include a flexible display manufactured on a thin and flexible substrate.
  • Flexible displays can bend or curl like paper while maintaining the characteristics of existing flat displays.
  • a unit pixel refers to the minimum unit for implementing one color.
  • a unit pixel of a flexible display can be implemented by a light emitting device.
  • the light emitting device may be Micro-LED or Nano-LED, but is not limited thereto.
  • Figure 2a is an enlarged view of area A1 in Figure 1
  • Figure 2b is a cross-sectional view of area A2 in Figure 2a.
  • the display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel areas, such as the first panel area A1, through tiling.
  • the first panel area A1 may include a plurality of light emitting devices 150 arranged for each unit pixel.
  • the unit pixel PX may include a first sub-pixel, a second sub-pixel, and a third sub-pixel.
  • the red light-emitting device 150R may be placed in the first sub-pixel
  • the green light-emitting device 150G may be placed in the second sub-pixel
  • the blue light-emitting device 150B may be placed in the third sub-pixel.
  • the unit pixel may further include a fourth sub-pixel in which no light-emitting element is disposed.
  • the light emitting device 150 may be a semiconductor light emitting device.
  • FIG. 2B is a cross-sectional view taken along line B1-B2 in area A2 of FIG. 2A.
  • the display device 100 of the embodiment may drive a semiconductor light emitting device using an active matrix (AM) method or a passive matrix (PM) method.
  • AM active matrix
  • PM passive matrix
  • the display device 100 of the embodiment includes a panel substrate 910, a first panel electrode 920, a second panel electrode (not shown), an insulating layer 930, and a plurality of semiconductors. It may include a light emitting device 150.
  • Each semiconductor light emitting device 150 may include red, green, and blue semiconductor light emitting devices to form a unit pixel, and may also include red phosphors and green phosphors to implement red and green colors, respectively.
  • the panel substrate 910 may be made of glass or polyimide. Additionally, the panel substrate 910 may include a flexible material such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Additionally, the panel substrate 910 may be made of a transparent material.
  • PEN Polyethylene Naphthalate
  • PET Polyethylene Terephthalate
  • the insulating layer 930 may include an insulating and flexible material such as polyimide, PEN, PET, etc., and may be integrated with the panel substrate 910 to form one substrate.
  • the insulating layer 930 may be a conductive adhesive layer that has adhesiveness and conductivity, and the conductive adhesive layer is flexible and may enable a flexible function of the display device.
  • the insulating layer 930 may be an anisotropic conductive film (ACF) or a conductive adhesive layer such as an anisotropic conductive medium or a solution containing conductive particles.
  • the conductive adhesive layer may be electrically conductive in a vertical direction with respect to the thickness, but may be a layer that is electrically insulating in a horizontal direction with respect to the thickness.
  • Figure 3 is a conceptual diagram of an intelligent assembly and transfer integration device 1000 according to an embodiment.
  • the intelligent assembly and transfer integration device 1000 includes a fluid chamber 310 accommodating the semiconductor light emitting device 150, a chamber chuck 320 disposed below the fluid chamber 310, and an assembly substrate 210.
  • a substrate driving unit 530 that drives, a magnet head unit 400 that applies magnetic force to the semiconductor light-emitting device 150, and an assembly inspection unit 600 that inspects the semiconductor light-emitting device 150A assembled on the assembly substrate 210.
  • a display panel substrate 910 disposed below the assembly substrate 210, a panel driver 930 that horizontally moves the panel substrate 910, and a panel chuck 920 that moves the panel substrate 910 up and down. It can be included.
  • the assembly board 210 may be field grounded (FG).
  • the substrate driving unit 530 may include a first substrate roller unit 531, a second substrate roller unit 532, and a third substrate roller unit 533.
  • the assembly substrate 201 may be provided with an assembly hole (not shown), and the assembled first semiconductor light emitting device 150A may be placed in the assembly hole.
  • the panel substrate 910 may be provided with a transfer hole TH, and the transferred second semiconductor light emitting device 150T may be disposed in the transfer hole TH.
  • the semiconductor light emitting device 150 is assembled on the assembly substrate 210, and the assembled first semiconductor light emitting devices 150A are immediately transferred in-line to the panel substrate 910 to increase the transfer speed. It can be significantly improved.
  • the first semiconductor light emitting devices 150A assembled on the assembly substrate 210 are inspected in real time and then selectively transferred to the transfer hole TH of the panel substrate 910 only if they are normal. By doing so, the transcription yield can be significantly increased. Accordingly, according to the embodiment, there is a special technical effect that can solve the problem of technical contradiction between the transfer speed and the transfer yield by increasing the transfer speed and the transfer yield at the same time.
  • the intelligent assembly and transfer integration device 1000 includes a fluid chamber 310 accommodating a plurality of semiconductor light emitting devices 150, a hydrophilic processing unit (not shown), and a chamber chuck 320. may include.
  • the fluid chamber 310 may be a bath and may be open or closed.
  • the fluid chamber 310 may be filled with an assembly solution such as deionized water, but is not limited thereto.
  • the hydrophilic treatment unit may perform hydrophilic treatment for wetting the assembled substrate 210 before it enters the fluid.
  • the embodiment may include a chamber driver 320 disposed below the fluid chamber 310.
  • the chamber driver 320 can move the fluid chamber 310 up and down or horizontally, and prevents the assembly solution flowing from the fluid chamber 310 from contaminating the panel substrate 910 during the assembly process. It can have both functions.
  • the chamber driver 320 may separate the fluid chamber 310 from the assembly substrate 210 during the assembly process preparation stage, and may lift and lower the fluid chamber 310 during the assembly process. 310 can be brought into contact with the assembled substrate 210 , and after the assembly process, the fluid chamber 310 can be lowered to be spaced apart from the assembled substrate 210 .
  • the chamber driver 320 can evaporate the collected fluid by heating or ultrasonic waves.
  • Figure 5 is a perspective view of the chip supply unit 312 in the intelligent assembly and transfer integration device 1000 according to an embodiment.
  • the chip supply unit 312 of the embodiment may have a structure that can be attached to or detached from the fluid chamber 310.
  • the chip supply unit 312 of the embodiment may be provided on the upper side or on one side of the fluid chamber, and may include a supply body portion 314B, a first extension portion 312P1, and a second extension portion 312P1 respectively disposed on one side of the supply body portion 314B. It may include an extension portion 312P2.
  • the first extension part 312P1 and the second extension part 312P2 may be provided with a first inlet 312H1 and a second inlet 312H2, respectively.
  • the supply body portion 314B is provided with a movement recess 314R so that the supplied semiconductor light emitting device 150 can be moved smoothly.
  • the chip supply unit 312 has a magnet bar 316 disposed below the supply body 314B and a position corresponding to the first input port 312H1 or the second input port 312H2 on the magnet bar 316. It may include a plurality of magnets 316M disposed in .
  • assembly and transfer can be performed by inserting a sufficient amount of the semiconductor light emitting device 150 into the fluid chamber 310 at the beginning of the assembly process.
  • the semiconductor light emitting device 150 can be supplied to the fluid chamber 310 through the chip supply unit 312 for continuous assembly and transfer using the intelligent assembly and transfer integration device 1000 according to the embodiment.
  • first inlet 312H1 and the second inlet 312H2 are arranged on the left and right sides of the fluid chamber 310 according to the position of the magnet 316M, and the first inlet 312H1 and the second inlet 312H2 are arranged in accordance with the position of the magnet 316M.
  • the semiconductor light emitting device 150 can be introduced through .
  • the first input port 312H1 and the second input port 312H2 may be arranged to match the spacing between the magnets 316M in the moving direction (X) of the assembled substrate 210.
  • a separate magnet bar 316 is provided to uniformly distribute the semiconductor light emitting devices in the moving direction (X) and the vertical direction (Y) of the assembly substrate 210, and the magnet bar 316 moves in the direction (Y) perpendicular to the direction of movement of the assembly substrate 210 and the semiconductor light emitting device chips each move to the magnet 316M, thereby performing an assembly process.
  • the supply body portion 314B is provided with a movement recess 314R so that the supplied semiconductor light emitting device chip can be moved smoothly.
  • the moving recess 314R is located in a direction perpendicular to the moving direction (X) of the assembly substrate 210. Y) can create a movement path for the semiconductor light emitting device 150.
  • the embodiment may include a flexible assembly substrate 210 mounted on the substrate driver 530.
  • the assembled substrate 210 may be referred to as a carrier substrate or a transfer substrate.
  • the assembled substrate 210 may be a flexible substrate that can be mounted on the first substrate roller unit 531, the second substrate roller unit 532, and the third substrate roller unit 533.
  • the assembled substrate 210 may be a flexible material that can be rolled like a roll, or may be a polymer such as polyimide or a thin metal substrate, but is not limited thereto.
  • FIG. 4 is a diagram showing an example in which the semiconductor light emitting device 150 is assembled on the assembly substrate 210 by a self-assembly method in the embodiment, and is a diagram with area A3 rotated by 180° for convenience of explanation.
  • the semiconductor light emitting device 150 may be introduced into the chamber 310 filled with fluid 1200, and the semiconductor light emitting device 150 may be generated by a magnetic field generated from the magnet head unit 400. Can be moved to the assembled substrate 210.
  • the fluid 1200 may be water such as ultrapure water, but is not limited thereto.
  • the chamber may be called a water tank, container, vessel, etc.
  • the first and second assembly wirings 201 and 202 form an electric field using an AC power source, and a dielectrophoretic force may be formed between the assembly wirings 201 and 202 by this electric field.
  • the semiconductor light emitting device 150 can be fixed to the assembly hole 203H on the assembly substrate 210 by this dielectrophoretic force.
  • the semiconductor light emitting device 150 may be implemented as a vertical semiconductor light emitting device as shown, but is not limited to this and a horizontal light emitting device may be employed.
  • the semiconductor light emitting device 150 may include a magnetic layer (not shown) containing a magnetic material.
  • the magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light emitting device 150 introduced into the fluid includes a magnetic layer, it can move to the assembled substrate 210 by the magnetic field generated from the magnet head unit 400.
  • the magnetic layer may be disposed on one side of the upper or lower side of the light emitting device, or on both sides.
  • the semiconductor light emitting device 150 may include a passivation layer 156 surrounding the top and side surfaces.
  • the passivation layer 156 may be formed using an inorganic insulator such as silica or alumina through PECVD, LPCVD, sputtering deposition, etc. Additionally, the passivation layer 156 may be formed by spin coating an organic material such as photoresist or polymer material.
  • the semiconductor light emitting device 150 may include a first conductivity type semiconductor layer 152a, a second conductivity type semiconductor layer 152c, and an active layer 152b disposed between them.
  • the first conductive semiconductor layer 152a may be an n-type semiconductor layer
  • the second conductive semiconductor layer 152c may be a p-type semiconductor layer, but are not limited thereto.
  • a first electrode layer 154a may be disposed on the first conductivity type semiconductor layer 152a, and a second electrode layer 154b may be disposed on the second conductivity type semiconductor layer 152c. To this end, a partial area of the first conductivity type semiconductor layer 152a or the second conductivity type semiconductor layer 152c may be exposed to the outside. Accordingly, after the semiconductor light emitting device 150 is assembled on the assembly substrate 210, some areas of the passivation layer 156 may be etched during the manufacturing process of the display device.
  • the assembly substrate 210 may include a pair of first assembly electrodes 201 and second assembly electrodes 202 corresponding to each of the semiconductor light emitting devices 150 to be assembled.
  • the first assembled electrode 201 and the second assembled electrode 202 can be formed by stacking multiple single metals, metal alloys, metal oxides, etc.
  • the first assembled electrode 201 and the second assembled electrode 202 include Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, and Hf. It may be formed including at least one of the following, but is not limited thereto.
  • first assembled electrode 201 and the second assembled electrode 202 are made of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), and IGZO ( indium gallium zinc oxide), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IZO Nitride (IZON), Al-Ga ZnO (AGZO), IGZO (In-Ga ZnO), ZnO, IrOx, RuOx, NiO, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO, but is not limited thereto.
  • the first assembled electrode 201 and the second assembled electrode 202 emit an electric field as an alternating voltage is applied, thereby fixing the semiconductor light emitting device 150 inserted into the assembly hole 203H by dielectrophoretic force. there is.
  • the gap between the first assembly electrode 201 and the second assembly electrode 202 may be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 203H, and the semiconductor light emitting device 150 using an electric field may be smaller than the width of the assembly hole 203H.
  • the assembly position can be fixed more precisely.
  • An insulating layer 212 is formed on the first assembled electrode 201 and the second assembled electrode 202 to protect the first assembled electrode 201 and the second assembled electrode 202 from the fluid 1200, and Leakage of current flowing through the first assembled electrode 201 and the second assembled electrode 202 can be prevented.
  • the insulating layer 212 may be formed of a single layer or multiple layers of an inorganic insulator such as silica or alumina or an organic insulator.
  • An assembly partition 207 may be formed on the insulating layer 212. Some areas of the assembly partition 207 may be located on top of the first assembly electrode 201 and the second assembly electrode 202, and the remaining area may be located on the top of the assembly substrate 210.
  • An assembly hole 203H where the semiconductor light emitting devices 150 are coupled is formed in the assembly substrate 210, and the surface where the assembly hole 203H is formed may be in contact with the fluid 1200.
  • the assembly hole 203H can guide the exact assembly position of the semiconductor light emitting device 150.
  • the assembly hole 203H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled at the corresponding location. Accordingly, it is possible to prevent another semiconductor light emitting device from being assembled or a plurality of semiconductor light emitting devices from being assembled into the assembly hole 203H.
  • a predetermined solder layer (not shown) is formed between the light emitting device 150 assembled on the assembly hole 203H of the assembly substrate 210 and the assembly electrodes 201 and 202 to improve the bonding force of the light emitting device 150. It can be improved. Additionally, after assembly, a molding layer (not shown) may be formed in the assembly hole 203H of the assembly substrate 210.
  • the molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.
  • the time required to assemble each semiconductor light-emitting device on a substrate can be drastically shortened, making it possible to implement a large-area, high-pixel display more quickly and economically.
  • the intelligent assembly and transfer integration device 1000 may include a substrate driver 530 that rotates the assembly substrate 210.
  • the substrate driving unit 530 may include a first substrate roller unit 531, a second substrate roller unit 532, and a third substrate roller unit 533.
  • the first substrate roller unit 531 may be disposed inside one side of the assembled substrate 210, and the second substrate roller portion 532 may be disposed inside the other side of the assembled substrate 210.
  • the third substrate roller unit 533 may be disposed on the inner and outer sides of the lower side of the assembled substrate 210 .
  • the substrate driver 530 connects the assembly substrate 210 and the panel substrate 910 in one line or multiple lines.
  • the semiconductor light emitting devices 150 can be transferred by meeting each other.
  • the substrate driving unit 50 may be connected to a single or plural motor, but is not limited thereto.
  • the assembled substrate 210 can be driven in an endless loop by the substrate driving unit 530, so assembly and transfer can proceed continuously.
  • the magnet head unit 400 that applies a magnetic field to the inserted semiconductor light emitting device 150 may be disposed on the assembly substrate 210.
  • the magnetic head unit 400 may be a permanent magnet or an electromagnet.
  • the magnet head unit 400 may move while in contact with the assembly substrate 210 in order to maximize the area to which the magnetic field is applied within the fluid 1200.
  • the magnet head unit 400 may include a plurality of magnetic materials, or may include a magnetic material of a size corresponding to that of the assembly substrate 210.
  • the semiconductor light emitting device 150 in the chamber 310 may move toward the magnet head 400 and the assembly substrate 210 by the magnetic field generated by the magnet head 400.
  • the embodiment includes a magnet handler (not shown) that can automatically or manually move the magnet head portion 400, or a motor (not shown) that can rotate the magnet head portion 400.
  • the head unit 400 can be rotated clockwise or counterclockwise, and the magnet head unit 400 can also be driven horizontally in a direction perpendicular to the rotation direction of the assembly board 210.
  • the magnet head unit 400 rotates to evenly distribute the magnetic force applied to the semiconductor light emitting device 150, thereby improving assembly speed.
  • the magnet head unit 400 rotates while moving for a certain period in the direction perpendicular to the rotation direction of the assembly substrate 210, the magnetic force is distributed more evenly, thereby improving the assembly speed of the semiconductor light emitting device 150 and simultaneously assembling it. It can be ensured that it is evenly assembled on the substrate 210.
  • Figures 6a and 6b are diagrams illustrating an operation using the intelligent assembly and transfer integration device 1000 according to an embodiment.
  • the intelligent assembly and transfer integration device 1000 may include an assembly inspection unit 600, a cleaning unit (not shown), a drying unit (not shown), and a suction device 650.
  • the cleaning unit sprays a solution on an area other than the assembly area of the assembly substrate 210 to remove the semiconductor light emitting device 150 attached outside the assembly area of the assembly substrate 210, covering the entire line at once. It can be sprayed so that it can be done.
  • the drying unit may apply hot air or heat to the semiconductor light emitting device 150 to evaporate the assembly solution before transfer.
  • the assembly inspection unit 600 can inspect whether the semiconductor light emitting device 150 has been assembled on the assembly substrate 210 or whether it has been accurately assembled.
  • the assembly inspection unit 600 can perform line scan assembly inspection and can cover the entire line at once.
  • the assembly inspection unit 600 may include a CCD image sensor, transmit inspection results to a control unit (not shown), and determine whether to transfer the assembly to the panel substrate 910 according to the inspection results.
  • the assembly state of each line is inspected in the width direction of the assembled substrate 210, and line position information such as non-assembly or defective assembly is transmitted to the system control unit (not shown). It is possible to control the transfer process from proceeding to the panel substrate 910.
  • the assembly state is inspected for each line in the width direction of the assembled substrate 210, and if there is an error (E) such as non-assembly or defective assembly, the panel substrate 910 is moved downward through the panel chuck 920.
  • E error
  • the semiconductor light emitting devices 150 assembled on the line with an error (E) may be removed by the vacuum suction device 650 disposed adjacent to the assembly inspection unit 600.
  • the semiconductor light emitting device 150 among the pixels for each line on the assembly substrate 210 is not assembled or is not assembled properly, the semiconductor light emitting device 150 on the line is not transferred to the panel substrate 910 and is transferred.
  • the semiconductor light emitting device 150 on the line is not transferred to the panel substrate 910 and is transferred.
  • the intelligent assembly and transfer integration device for semiconductor light emitting devices there is a technical effect of simultaneously improving the transfer speed and transfer yield when transferring semiconductor light emitting devices to a display panel.
  • a line may be transferred to the portion where the assembled substrate 210 and the flat panel substrate 910 on the substrate driver 530 meet in the width direction of the substrate driver 530.
  • a 100% transfer yield is possible.
  • the assembly process and the transfer process are separated but connected in-line, so there is no limitation on the transfer area depending on the size of the assembly system.
  • a high chamfering rate can be secured when chamfering a small area after a large-area process.
  • the substrate driver 530 is configured in multiple configurations, high-speed transfer can be implemented.
  • the intelligent assembly and transfer integration device 1000 includes a panel driver 930 that horizontally moves the display panel substrate 910 and a panel that moves the panel substrate 910 up and down. It may include a chuck 920.
  • the panel chuck 920 may be a vacuum stage.
  • the panel driving unit 930 may be provided singly or in plural pieces, and is shown as two in the drawing, but is not limited thereto.
  • the panel driver 930 may be driven by a motor, but is not limited thereto.
  • the panel chuck 920 is disposed on the bottom of the panel board 910 to contact or separate the panel board 910 from the assembly board 210.
  • the panel substrate 910 has a technical feature in that the transfer hole (TH) for transferring the semiconductor light emitting device 150 is facing upward, matching the panel orientation in the existing display process.
  • the panel driver 930 can move together.
  • the panel driver 930 may also move, and the assembly substrate 210 may be moved in a state where the panel substrate 910 is positioned closely to the assembly substrate 210. ) and the panel substrate 910 may be moved in opposite directions, thereby transferring the semiconductor light emitting device in real time.
  • the panel driver 930 may not move together.
  • the panel driver 930 when the panel chuck 920 moves up and down, the panel driver 930 remains stationary, and at this time, the assembly board 210 may temporarily stop at the transfer position.
  • the panel chuck 920 moves the panel substrate 910 upward and moves toward and contacts the assembled substrate 210 to transfer the semiconductor light emitting device to the transfer hole TH of the panel substrate 910 and then transfer the semiconductor light emitting device to the panel substrate 910.
  • Chuck 920 may descend.
  • the panel driver 930 moves the panel substrate 910 horizontally, and then the panel chuck 920 lifts the panel substrate 910 again to transfer the semiconductor light emitting device.
  • a TFT electrode may be formed on the display panel substrate 910, and may be connected to the transferred second semiconductor light emitting device 150T using a method such as bump, solder, bonding, or ACF.
  • the transfer hole (TH) in the panel substrate 910 is facing upward, consistent with the panel orientation in the existing display process, and the panel substrate including the TFT backplane is turned over in the internal technology assembly transfer integration device.
  • the display panel substrate 910 is placed below the assembly substrate 210, and the panel substrate 910 is supported by the panel chuck 920, so that the panel substrate is bent when manufacturing a large-area display. There are special technical effects that do not apply.
  • the front of the display panel substrate faces upward, it has the advantage of being easy to apply to the display process of existing internal technology.
  • the assembly process and the transfer process are separated but connected in-line, so there is an advantage that there is no limit to the transfer area depending on the size of the assembly and transfer system.
  • the assembly electrode for DEP assembly can be omitted from the panel substrate, so there is an advantage that there is no need to construct a complex electrode structure in which two types of electrodes are mixed in the panel substrate.
  • the panel substrate 910 is disposed under the assembly substrate 210, and when the semiconductor light emitting device is transferred from the assembly substrate 210 to the panel substrate 910, the transfer hole of the panel substrate 910 is formed. Since the direction of close transfer to (TH) is parallel to the direction of gravity, transfer efficiency is improved.
  • Figure 7 is an example of operation using the intelligent assembly and transfer integration device 1002 according to the second embodiment, and the magnet head portion 400 in the intelligent assembly and transfer integration device 1000 according to the embodiment shown in Figure 3. is an omitted drawing and includes the magnet head portion 400 in the second embodiment.
  • FIG. 8 is a conceptual diagram of the second fluid chamber 310B in the intelligent assembly and transfer integration device 1002 shown in FIG. 7.
  • the second fluid chamber 310B in the second embodiment may be provided with a water tank frame 310F to prevent fluid from leaking to the outside. Additionally, in the embodiment, an O-ring (not shown) may be placed between the water tank frame 310F and the assembly board 210 to prevent fluid from leaking out.
  • the electrode portion of the assembled substrate is in contact with the electrode portion disposed on the side wall of the bath to receive power.
  • one of the technical challenges of the embodiment is that in the assembly and transfer integration device of the internal technology, the electrode portion of the assembled substrate slides while in surface contact with the electrode portion of the chamber, so mutual friction occurs, causing damage to the electrode portion of the assembled substrate or the water tank electrode portion.
  • the goal is to provide an intelligent assembly and transfer integrated device that can solve this problem.
  • the second fluid chamber 310B may include a variable water tank electrode portion 350 disposed on the water tank frame 310F. .
  • the second fluid chamber 310B includes a first variable water tank electrode portion 351 disposed on one side of the water tank frame 310F and a second variable water tank electrode portion 351 disposed on the other side of the water tank frame 310F. It may include (352).
  • FIG. 9 is an illustration of a first state of the third area A3 of the intelligent assembly and transfer integration device 1002 according to the second embodiment shown in FIG. 7, and FIG. 10 is a diagram of the second embodiment shown in FIG. 7. This is an exemplary diagram of the second state of the third area (A3) of the intelligent assembly and transfer integration device 1002 according to .
  • FIG. 9 is an enlarged view of the third area A3 of the intelligent assembly and transfer integration device 1002 according to the second embodiment shown in FIG. 7, in which the assembly substrate 210 is connected to the first water tank electrode portion 351. ) This is a drawing of the first state that is not in contact with.
  • the first deformable water tank electrode unit 351 may include a flat electrode unit 351a and a plurality of round electrode units 351b extending laterally from the flat electrode unit 351a. .
  • a first separation distance D1 may occur between the round electrode parts 351b.
  • the round electrode portion 351b may have a curvature such as circular or oval.
  • the overall shape may be polygonal, but it may also have a partial curvature.
  • the shape of the round electrode portion 351b may partially change when subjected to a predetermined pressure, but as an electrode portion, it can be highly reliable and sturdy.
  • Figure 10 is an illustration of a second state of the third area (A3) of the intelligent assembly and transfer integration device 1002 according to the second embodiment shown in Figure 7, where the assembly substrate 210 is connected to the first water tank electrode portion. This is a drawing in contact with (351).
  • the assembled substrate 210 may include a substrate electrode portion 210e.
  • the assembled substrate 210 may be provided with a first substrate electrode portion 210e and a second substrate electrode portion 210e on both sides in the longitudinal direction, respectively, and the first and second substrate electrode portions 210e ) can be applied to the first assembled electrode 201 and the second assembled electrode 202 to form a DEP force.
  • variable first water tank electrode unit 351 includes a flat electrode unit 351a and a round electrode unit 351b extending laterally from the flat electrode unit 351a, and is attached to an assembled substrate.
  • the first separation distance D1 is secured between the round electrode parts 351b, so that the round electrode parts 351b may be able to move.
  • the round electrode parts 351b which can move even when subjected to a predetermined friction pressure, function to support each other. While doing so, the second separation distance (D2) can be maintained, and the second separation distance (D2) can be substantially zero.
  • the movable round electrode parts 351b when the assembled substrate 210 is in contact with the first and second water tank electrode parts 351 and 352, the movable round electrode parts 351b have a function of supporting each other even when subjected to a predetermined friction pressure. This has the technical effect of maintaining structural stability and reliability.
  • the substrate electrode portion 210e of the assembled substrate 210 is in line contact with the first and second bath electrode portions 351 and 352 disposed on the side wall of the bath. Since sliding occurs in a point contact state, mutual friction is significantly reduced, thereby solving the problem of damage to the substrate electrode portion 210e and the first and second water tank electrode portions 351 and 352 of the assembled substrate. There are special technical effects.
  • FIG. 11 is a conceptual diagram of the third fluid chamber 310C in the intelligent assembly and transfer integration device 1002 shown in FIG. 8.
  • the third fluid chamber 310C includes a chip supply passage 317A mounted on the first side of the water tank frame 310F and a fluid discharge path 317B mounted on the second side of the water tank frame 310F. ) can be provided.
  • a special technical effect of supplying semiconductor light-emitting devices to the fluid chamber in real time is achieved by supplying the fluid in which the semiconductor light-emitting devices 150 are dispersed to the water tank frame 310F through the chip supply passage 317A. there is.
  • the fluid in the water tank frame 310F can be controlled by discharging the fluid through the fluid discharge path 317B mounted on the second side so that the fluid can be maintained at a predetermined level.
  • a mesh strainer may be provided at the connection portion between the fluid discharge path 317B and the water tank frame 310F to allow the fluid to be discharged but not the semiconductor light emitting device to be discharged.
  • the diameter of the chip supply passage 317A may be larger than or equal to the diameter of the fluid discharge passage 317B, but is not limited thereto.
  • the intelligent assembly and transfer integration device for semiconductor light emitting devices there is a technical effect of simultaneously improving the transfer speed and transfer yield when transferring semiconductor light emitting devices to a display panel.
  • the transfer hole in the panel substrate 910 is facing upward, consistent with the panel orientation in the existing display process, and the transfer process is performed with the panel substrate including the TFT backplane turned over in the assembly and transfer integration device of internal technology.
  • the display panel substrate 910 is placed below the assembly substrate 210, and the panel substrate 910 is supported by the panel chuck 920, so that the panel substrate is bent when manufacturing a large-area display. There are special technical effects that do not apply.
  • the round electrode part 351b when the assembled substrate 210 is in contact with the first and second water tank electrode parts 351 and 352, the round electrode part 351b, which can move even when subjected to a predetermined friction pressure, is They have the technical effect of maintaining structural stability and reliability by supporting each other.
  • the substrate electrode portion 210e of the assembled substrate 210 is in line contact with the first and second bath electrode portions 351 and 352 disposed on the side wall of the bath. Since sliding occurs in a point contact state, mutual friction is significantly reduced, thereby solving the problem of damage to the substrate electrode portion 210e and the first and second water tank electrode portions 351 and 352 of the assembled substrate. There are special technical effects.
  • the assembly process and the transfer process are separated but connected in-line, so there is no limitation on the transfer area depending on the size of the assembly system.
  • a high chamfering rate can be secured when chamfering a small area after a large-area process.
  • Embodiments may be adopted in the field of displays that display images or information.
  • Embodiments may be adopted in the field of displays that display images or information using semiconductor light-emitting devices.
  • Embodiments can be adopted in the field of displays that display images or information using micro- or nano-level semiconductor light-emitting devices.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Un mode de réalisation se rapporte à un ensemble intégré intelligent et à un dispositif de transfert pour des dispositifs électroluminescents à semi-conducteurs. Le dispositif intégré intelligent et le dispositif de transfert selon le mode de réalisation comprennent : une chambre de fluide recevant des dispositifs électroluminescents à semi-conducteurs ; une unité d'entraînement de substrat destinée à entraîner un substrat d'assemblage sur lequel les dispositifs électroluminescents à semi-conducteurs sont assemblés ; une unité de tête d'aimant qui est disposée au-dessus du substrat d'assemblage et applique une force magnétique aux dispositifs électroluminescents à semi-conducteurs ; un substrat de panneau d'affichage qui est disposé au-dessous du substrat d'assemblage et auquel les dispositifs électroluminescents à semi-conducteurs assemblés sont transférés ; et une unité d'entraînement de panneau qui déplace horizontalement le substrat de panneau.
PCT/KR2022/004746 2022-04-01 2022-04-01 Ensemble intégré intelligent et dispositif de transfert pour dispositifs électroluminescents à semi-conducteurs WO2023191159A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190296184A1 (en) * 2017-08-18 2019-09-26 Intel Corporation Micro light-emitting diode (led) display and fluidic self-assembly of same
KR20190122117A (ko) * 2018-04-19 2019-10-29 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR20200026763A (ko) * 2019-09-27 2020-03-11 엘지전자 주식회사 반도체 발광소자의 자가조립용 기판 척
KR20200026838A (ko) * 2020-01-08 2020-03-11 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치 및 이의 제조방법
KR20200048762A (ko) * 2018-10-30 2020-05-08 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190296184A1 (en) * 2017-08-18 2019-09-26 Intel Corporation Micro light-emitting diode (led) display and fluidic self-assembly of same
KR20190122117A (ko) * 2018-04-19 2019-10-29 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법
KR20200048762A (ko) * 2018-10-30 2020-05-08 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법
KR20200026763A (ko) * 2019-09-27 2020-03-11 엘지전자 주식회사 반도체 발광소자의 자가조립용 기판 척
KR20200026838A (ko) * 2020-01-08 2020-03-11 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치 및 이의 제조방법

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