WO2024005218A1 - Dispositif d'affichage - Google Patents

Dispositif d'affichage Download PDF

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Publication number
WO2024005218A1
WO2024005218A1 PCT/KR2022/009149 KR2022009149W WO2024005218A1 WO 2024005218 A1 WO2024005218 A1 WO 2024005218A1 KR 2022009149 W KR2022009149 W KR 2022009149W WO 2024005218 A1 WO2024005218 A1 WO 2024005218A1
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WO
WIPO (PCT)
Prior art keywords
assembly
electrode
wiring
emitting device
semiconductor light
Prior art date
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PCT/KR2022/009149
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English (en)
Korean (ko)
Inventor
장재원
김도한
박성민
Original Assignee
엘지전자 주식회사
엘지디스플레이 주식회사
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Application filed by 엘지전자 주식회사, 엘지디스플레이 주식회사 filed Critical 엘지전자 주식회사
Priority to PCT/KR2022/009149 priority Critical patent/WO2024005218A1/fr
Publication of WO2024005218A1 publication Critical patent/WO2024005218A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • Embodiments relate to display devices.
  • LCDs liquid crystal displays
  • OLED displays OLED displays
  • Micro-LED displays Micro-LED displays
  • a micro-LED display is a display that uses micro-LED, a semiconductor light emitting device with a diameter or cross-sectional area of 100 ⁇ m or less, as a display element.
  • micro-LED displays use micro-LED, a semiconductor light-emitting device, as a display device, they have excellent performance in many characteristics such as contrast ratio, response speed, color gamut, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.
  • the micro-LED display has the advantage of being able to freely adjust the size and resolution and implement a flexible display because the screen can be separated and combined in a modular manner.
  • micro-LED displays require more than millions of micro-LEDs, there is a technical problem that makes it difficult to quickly and accurately transfer micro-LEDs to the display panel.
  • Transfer technologies that have been recently developed include the pick and place process, laser lift-off method, or self-assembly method.
  • the self-assembly method is a method in which the semiconductor light-emitting device finds its assembly position within the fluid on its own, and is an advantageous method for implementing a large-screen display device.
  • FIG. 1 shows the structure of assembly wiring for assembling a semiconductor light emitting device according to an undisclosed internal technology.
  • the first assembly wiring 2 and the second assembly wiring 3 are arranged in parallel, and the semiconductor light emitting device 6 is placed in the assembly hole 5H on these assembly wirings 2 and 3. ) is assembled.
  • a DEP force is formed between the first assembly wiring 2 and the second assembly wiring 3, and the semiconductor light emitting device 6 is pulled by this DEP force into the assembly hole 5H. ) is inserted into.
  • the DEP force is largest at the gap (GAP) between the ends of the first assembly wiring (2) and the ends of the second assembly wiring (3) facing each other, and is away from the end of the first assembly wiring (2) or at the end of the second assembly wiring (3).
  • the farther away from the end of the wiring (3) the smaller the DEP force becomes.
  • the DEP force is large in the center area of the assembly hole 5H along the X-axis direction and small in the edge area of the assembly hole 5H, so the DEP force is non-uniform.
  • the gap (GAP) between the first assembled wiring 2 and the second assembled wiring 3 is very small compared to the diameter of the semiconductor light emitting device 6.
  • the gap (GAP) between the first assembly wiring 2 and the second assembly wiring 3 is located along the center line 8 of the semiconductor light emitting device 6 in the same direction as the Y-axis direction.
  • the DEP force is non-uniform along the X-axis direction within the assembly hole 5H and is strong only along the center line 8 of the semiconductor light-emitting device 6 along the Y-axis direction, cannot be stably assembled in the assembly hole (5H). That is, the DEP force does not act on the edge area of the semiconductor light emitting device 6, resulting in a defect in which the semiconductor light emitting device 6 is assembled in a twisted or tilted state (FIG. 2b).
  • the unexplained symbol 1 is a substrate, and 4 is an insulating layer.
  • the embodiments aim to solve the above-described problems and other problems.
  • Another object of the embodiment is to provide a display device that can prevent assembly defects.
  • another purpose of the embodiment is to provide a display device that can prevent the pre-assembled semiconductor light emitting device from being separated.
  • a display device includes: a substrate including sub-pixels; a first assembly line disposed along one direction on the substrate; a second assembly wiring arranged in parallel with the first assembly wiring; a partition disposed on the first assembly wiring and the second assembly wiring and including a first hole in the sub-pixel; And a semiconductor light emitting device in the first hole,
  • the second assembled wiring surrounds a partial region of the first assembled wiring, and the partial region of the first assembled wiring and the second assembled wiring have a predetermined gap at an edge region of the first hole.
  • the gap may be located along an edge area below the semiconductor light emitting device.
  • the display device may include an insulating layer on the first assembly wiring.
  • the second assembled wiring may be disposed on the insulating layer.
  • the second assembled wiring includes a main electrode; and an auxiliary electrode extending from the main electrode in the sub-pixel.
  • the auxiliary electrode may include a second hole having a diameter smaller than the diameter of the first hole.
  • the second hole may have a shape corresponding to the shape of the semiconductor light emitting device.
  • the first assembled wiring includes a main electrode; and an electrode protruding from the second hole of the auxiliary electrode.
  • the protruding electrode may be connected to the main electrode through the insulating layer.
  • the auxiliary electrode may surround the protruding electrode.
  • the diameter of the protruding electrode may be smaller than the diameter of the semiconductor light emitting device.
  • the protruding electrode and the auxiliary electrode may have the gap, and the gap may be located along an edge area below the semiconductor light emitting device.
  • the protruding electrode may include the same metal as the second assembly wiring.
  • the first assembled wiring may include a bent portion extending from the main electrode toward the second assembled wiring in the pixel area.
  • the protruding electrode may be connected to the bent portion through the insulating layer.
  • the width of the bent portion may be smaller than the width of the main electrode.
  • the width of the bent portion may be smaller than the diameter of the first hole.
  • the width of the bent portion may be greater than or equal to the diameter of the protruding electrode.
  • the display device includes a connection electrode surrounding the semiconductor light emitting device within the first hole; and electrode wiring on the semiconductor light emitting device.
  • the connection electrode may be connected to at least one assembly wiring of the first assembly wiring or the second assembly wiring.
  • the sub-pixel PX may be provided with a first hole 340H for assembly into the semiconductor light emitting device 150.
  • the second assembly wiring 322 is an auxiliary electrode 322-2 including a second hole 320H within the first hole 340H and having a diameter D2 smaller than the diameter D1 of the first hole 340H. may include.
  • the protruding electrode 321-3 of the first cooking wire 321 may protrude vertically and be disposed in the second hole 320H of the auxiliary electrode 322-2.
  • a predetermined gap G1 may be formed between the protruding electrode 321-3 and the auxiliary electrode 322-2.
  • the gap G1 may be formed along the edge area of the first hole 340H. That is, the gap G1 may be formed along the circumference of the protruding electrode 321-3.
  • the largest DEP force may be formed in the corresponding gap G1.
  • the semiconductor light emitting device 150 may be pulled into the first hole 34H by the corresponding DEP force, and the largest DEP along the lower edge region of the semiconductor light emitting device 150 inserted into the first hole 340H Because force acts, the semiconductor light emitting device 150 can be stably seated on the bottom of the first hole 340H, that is, the top surface of the second insulating layer 335, without being distorted or tilted.
  • the semiconductor light-emitting device 150 is seated in the first hole 340H, the largest DEP force is continuously applied along the edge area of the lower side of the semiconductor light-emitting device 150, so the seated semiconductor light-emitting device 150 Can be firmly fixed within the first hole 340H without falling out of the first hole 340H. Accordingly, assembly yield, such as the semiconductor light emitting device 150 being seated twisted or tilted in the first hole 340H or being separated after being assembled in the first hole 340H, is prevented, thereby dramatically improving assembly yield. You can.
  • the bent portion 321-4 extending from the first assembly wiring 321 is disposed in the sub-pixel PX', so that the first assembly wiring 321 and
  • the parasitic capacitance capacity can be reduced.
  • the loss caused by the parasitic capacitance of the alternating current voltage between the first assembled wiring 321 and the second assembled wiring 322 can be reduced. Accordingly, a DEP force of sufficient size can be formed even with a smaller AC voltage, and power consumption can be reduced.
  • FIG. 1 shows the structure of assembly wiring for assembling a semiconductor light emitting device according to an undisclosed internal technology.
  • Figure 2a shows a semiconductor light emitting device being assembled in an assembly hole during self-assembly using an assembly wiring structure according to an undisclosed internal technology.
  • Figure 2b shows assembly defects of a semiconductor light emitting device during self-assembly using an assembly wiring structure according to an undisclosed internal technology.
  • Figure 3 shows a living room of a house where a display device according to an embodiment is placed.
  • Figure 4 is a block diagram schematically showing a display device according to an embodiment.
  • FIG. 5 is a circuit diagram showing an example of the pixel of FIG. 4.
  • FIG. 6 is an enlarged view of the first panel area in the display device of FIG. 3.
  • Figure 7 is an enlarged view of area A2 in Figure 6.
  • Figure 8 is a diagram showing an example in which a light emitting device according to an embodiment is assembled on a substrate by a self-assembly method.
  • Figure 9 is a plan view showing a sub-pixel according to the first embodiment.
  • Figure 10 is a cross-sectional view taken along line C1-C2 in Figure 9.
  • FIG. 11A is a plan view showing a DEP force formed between the protruding electrode of the first assembled wiring and the auxiliary electrode of the second assembled wiring in the sub-pixel according to the first embodiment.
  • FIG. 11B is a cross-sectional view showing a semiconductor light emitting device being assembled by a DEP force formed between the protruding electrode of the first assembly wiring and the auxiliary electrode of the second assembly wiring in the sub-pixel according to the first embodiment.
  • FIG. 12 is a cross-sectional view showing the completed assembly of the semiconductor light emitting device by the DEP force formed between the protruding electrode of the first assembly wiring and the auxiliary electrode of the second assembly wiring in the sub-pixel according to the first embodiment.
  • Figures 13a and 13b show forming the first assembled wiring.
  • FIGS. 15A and 15B show assembling a semiconductor light emitting device using DEP force between the first assembly wiring and the second assembly wiring.
  • Figure 16 shows a post-process performed for electrical connection of a semiconductor light emitting device.
  • Figure 17 is a plan view showing a display device according to the first embodiment.
  • Figure 18 is a plan view showing a sub-pixel according to the second embodiment.
  • FIG. 19 is a cross-sectional view taken along line D1-D2 in FIG. 18.
  • Display devices described in this specification include TVs, shines, mobile phones, smart phones, head-up displays (HUDs) for automobiles, backlight units for laptop computers, displays for VR or AR, etc. You can. However, the configuration according to the embodiment described in this specification can be applied to a device capable of displaying even if it is a new product type that is developed in the future.
  • HUDs head-up displays
  • Figure 3 shows a living room of a house where a display device according to an embodiment is placed.
  • the display device 100 of the embodiment can display the status of various electronic products such as a washing machine 101, a robot vacuum cleaner 102, and an air purifier 103, and displays the status of each electronic product and an IOT-based You can communicate with each other and control each electronic product based on the user's setting data.
  • the display device 100 may include a flexible display manufactured on a thin and flexible substrate.
  • Flexible displays can bend or curl like paper while maintaining the characteristics of existing flat displays.
  • a unit pixel refers to the minimum unit for implementing one color.
  • a unit pixel of a flexible display may be implemented by a light-emitting device.
  • the light emitting device may be Micro-LED or Nano-LED, but is not limited thereto.
  • FIG. 4 is a block diagram schematically showing a display device according to an embodiment
  • FIG. 5 is a circuit diagram showing an example of the pixel of FIG. 4.
  • a display device may include a display panel 10, a driving circuit 20, a scan driver 30, and a power supply circuit 50.
  • the display device 100 of the embodiment may drive the light emitting device in an active matrix (AM) method or a passive matrix (PM) method.
  • AM active matrix
  • PM passive matrix
  • the driving circuit 20 may include a data driver 21 and a timing control unit 22.
  • the display panel 10 may be rectangular, but is not limited thereto. That is, the display panel 10 may be formed in a circular or oval shape. At least one side of the display panel 10 may be bent to a predetermined curvature.
  • the display panel 10 may be divided into a display area (DA) and a non-display area (NDA) disposed around the display area (DA).
  • the display area DA is an area where pixels PX are formed to display an image.
  • the display panel 10 includes data lines (D1 to Dm, m is an integer greater than 2), scan lines (S1 to Sn, n is an integer greater than 2) that intersect the data lines (D1 to Dm), and a high potential voltage.
  • the pixels (PX) connected to the high-potential voltage line (VDDL) supplied, the low-potential voltage line (VSSL) supplied with the low-potential voltage, and the data lines (D1 to Dm) and scan lines (S1 to Sn). It can be included.
  • Each of the pixels PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3.
  • the first sub-pixel (PX1) emits a first color light of a first main wavelength
  • the second sub-pixel (PX2) emits a second color light of a second main wavelength
  • the third sub-pixel (PX3) A third color light of a third main wavelength may be emitted.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but are not limited thereto.
  • FIG. 4 it is illustrated that each pixel PX includes three sub-pixels, but the present invention is not limited thereto. That is, each pixel PX may include four or more sub-pixels.
  • Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) includes at least one of the data lines (D1 to Dm), at least one of the scan lines (S1 to Sn), and It can be connected to the above voltage line (VDDL).
  • the first sub-pixel PX1 may include light-emitting devices LD, a plurality of transistors for supplying current to the light-emitting devices LD, and at least one capacitor Cst.
  • each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include only one light emitting element (LD) and at least one capacitor (Cst). It may be possible.
  • Each of the light emitting elements LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers, and a second electrode.
  • the first electrode may be an anode electrode and the second electrode may be a cathode electrode, but this is not limited.
  • the light emitting device may be one of a horizontal light emitting device, a flip chip type light emitting device, and a vertical light emitting device.
  • the plurality of transistors may include a driving transistor (DT) that supplies current to the light emitting elements (LD) and a scan transistor (ST) that supplies a data voltage to the gate electrode of the driving transistor (DT).
  • the driving transistor DT is connected to a gate electrode connected to the source electrode of the scan transistor ST, a source electrode connected to the high potential voltage line VDDL to which a high potential voltage is applied, and the first electrodes of the light emitting elements LD. It may include a connected drain electrode.
  • the scan transistor (ST) has a gate electrode connected to the scan line (Sk, k is an integer satisfying 1 ⁇ k ⁇ n), a source electrode connected to the gate electrode of the driving transistor (DT), and a data line (Dj, j). It may include a drain electrode connected to an integer satisfying 1 ⁇ j ⁇ m.
  • the capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT.
  • the storage capacitor (Cst) charges the difference between the gate voltage and source voltage of the driving transistor (DT).
  • the driving transistor (DT) and the scan transistor (ST) may be formed of a thin film transistor.
  • the driving transistor (DT) and the scan transistor (ST) are mainly described as being formed of a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but the present invention is not limited thereto.
  • the driving transistor (DT) and scan transistor (ST) may be formed of an N-type MOSFET. In this case, the positions of the source and drain electrodes of the driving transistor (DT) and the scan transistor (ST) may be changed.
  • each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) includes one driving transistor (DT), one scan transistor (ST), and one capacitor ( Although it is exemplified to include 2T1C (2 Transistor - 1 capacitor) with Cst), the present invention is not limited thereto.
  • Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include a plurality of scan transistors (ST) and a plurality of capacitors (Cst).
  • the second sub-pixel (PX2) and the third sub-pixel (PX3) can be represented by substantially the same circuit diagram as the first sub-pixel (PX1), detailed descriptions thereof will be omitted.
  • the driving circuit 20 outputs signals and voltages for driving the display panel 10.
  • the driving circuit 20 may include a data driver 21 and a timing controller 22.
  • the data driver 21 receives digital video data (DATA) and source control signal (DCS) from the timing control unit 22.
  • the data driver 21 converts digital video data (DATA) into analog data voltages according to the source control signal (DCS) and supplies them to the data lines (D1 to Dm) of the display panel 10.
  • the timing control unit 22 receives digital video data (DATA) and timing signals from the host system.
  • Timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock.
  • the host system may be an application processor in a smartphone or tablet PC, a monitor, or a system-on-chip in a TV.
  • the timing control unit 22 generates control signals to control the operation timing of the data driver 21 and the scan driver 30.
  • the control signals may include a source control signal (DCS) for controlling the operation timing of the data driver 21 and a scan control signal (SCS) for controlling the operation timing of the scan driver 30.
  • DCS source control signal
  • SCS scan control signal
  • the driving circuit 20 may be disposed in the non-display area (NDA) provided on one side of the display panel 10.
  • the driving circuit 20 may be formed of an integrated circuit (IC) and mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method.
  • COG chip on glass
  • COP chip on plastic
  • ultrasonic bonding method The present invention is not limited to this.
  • the driving circuit 20 may be mounted on a circuit board (not shown) rather than on the display panel 10.
  • the data driver 21 may be mounted on the display panel 10 using a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method, and the timing control unit 22 may be mounted on a circuit board. there is.
  • COG chip on glass
  • COP chip on plastic
  • the scan driver 30 receives a scan control signal (SCS) from the timing control unit 22.
  • the scan driver 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10.
  • the scan driver 30 may include a plurality of transistors and may be formed in the non-display area NDA of the display panel 10.
  • the scan driver 30 may be formed as an integrated circuit, and in this case, it may be mounted on a gate flexible film attached to the other side of the display panel 10.
  • the circuit board may be attached to pads provided at one edge of the display panel 10 using an anisotropic conductive film. Because of this, the lead lines of the circuit board can be electrically connected to the pads.
  • the circuit board may be a flexible printed circuit board, a printed circuit board, or a flexible film such as a chip on film. The circuit board may be bent toward the bottom of the display panel 10. Because of this, one side of the circuit board is attached to one edge of the display panel 10, and the other side is placed below the display panel 10 and can be connected to a system board on which the host system is mounted.
  • the power supply circuit 50 may generate voltages necessary for driving the display panel 10 from the main power supplied from the system board and supply them to the display panel 10.
  • the power supply circuit 50 generates a high potential voltage (VDD) and a low potential voltage (VSS) for driving the light emitting elements (LD) of the display panel 10 from the main power supply to It can be supplied to the high potential voltage line (VDDL) and low potential voltage line (VSSL).
  • the power supply circuit 50 may generate and supply driving voltages for driving the driving circuit 20 and the scan driver 30 from the main power supply.
  • FIG. 6 is an enlarged view of the first panel area in the display device of FIG. 3.
  • the display device 100 of the embodiment may be manufactured by mechanically and electrically connecting a plurality of panel areas, such as the first panel area A1, through tiling.
  • the first panel area A1 may include a plurality of semiconductor light emitting devices 150 arranged for each unit pixel (PX in FIG. 4).
  • the unit pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3.
  • a plurality of red semiconductor light-emitting devices 150R are disposed in the first sub-pixel PX1
  • a plurality of green semiconductor light-emitting devices 150G are disposed in the second sub-pixel PX2
  • a plurality of blue semiconductor light-emitting devices are disposed in the second sub-pixel PX2.
  • (150B) may be disposed in the third sub-pixel (PX3).
  • the unit pixel PX may further include a fourth sub-pixel in which a semiconductor light-emitting device is not disposed, but this is not limited.
  • Figure 7 is an enlarged view of area A2 in Figure 6.
  • the display device 100 of the embodiment may include a substrate 200, assembly wiring 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. More components may be included.
  • the assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 that are spaced apart from each other.
  • the first assembly wiring 201 and the second assembly wiring 202 may be provided to generate dielectrophoresis force (DEP force) to assemble the semiconductor light emitting device 150.
  • the semiconductor light emitting device 150 may be one of a horizontal semiconductor light emitting device, a flip chip type semiconductor light emitting device, and a vertical semiconductor light emitting device.
  • the semiconductor light-emitting device 150 may include, but is not limited to, a red semiconductor light-emitting device 150, a green semiconductor light-emitting device 150G, and a blue semiconductor light-emitting device 150B0 to form a unit pixel (sub-pixel).
  • red and green phosphors may be provided to implement red and green colors, respectively.
  • the substrate 200 may be a support member that supports components disposed on the substrate 200 or a protection member that protects the components.
  • the substrate 200 may be a rigid substrate or a flexible substrate.
  • the substrate 200 may be made of sapphire, glass, silicon, or polyimide. Additionally, the substrate 200 may include a flexible material such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Additionally, the substrate 200 may be made of a transparent material, but is not limited thereto.
  • the substrate 200 may function as a support substrate in a display panel, and may also function as an assembly substrate when self-assembling a light emitting device.
  • the substrate 200 may be a backplane equipped with circuits in the sub-pixels (PX1, PX2, PX3) shown in FIGS. 4 and 5, such as transistors (ST, DT), capacitors (Cst), signal wires, etc.
  • PX1, PX2, PX3 sub-pixels shown in FIGS. 4 and 5, such as transistors (ST, DT), capacitors (Cst), signal wires, etc.
  • ST, DT transistors
  • Cst capacitors
  • signal wires etc.
  • the insulating layer 206 may include an insulating and flexible organic material such as polyimide, PAC, PEN, PET, polymer, etc., or an inorganic material such as silicon oxide (SiO2) or silicon nitride series (SiNx), and may include a substrate. (200) may be integrated to form one substrate.
  • the insulating layer 206 may be a conductive adhesive layer that has adhesiveness and conductivity, and the conductive adhesive layer may be flexible and enable a flexible function of the display device.
  • the insulating layer 206 may be an anisotropic conductive film (ACF) or a conductive adhesive layer such as an anisotropic conductive medium or a solution containing conductive particles.
  • the conductive adhesive layer may be a layer that is electrically conductive in a direction perpendicular to the thickness, but electrically insulating in a direction horizontal to the thickness.
  • the insulating layer 206 may include an assembly hole 203 into which the semiconductor light emitting device 150 is inserted. Therefore, during self-assembly, the semiconductor light emitting device 150 can be easily inserted into the assembly hole 203 of the insulating layer 206.
  • the assembly hole 203 may be called an insertion hole, a fixing hole, an alignment hole, etc.
  • the assembly hall 203 may also be called a hall.
  • the assembly hole 203 may be called a hole, groove, groove, recess, pocket, etc.
  • the assembly hole 203 may be different depending on the shape of the semiconductor light emitting device 150.
  • the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device each have different shapes, and may have an assembly hole 203 having a shape corresponding to the shape of each of these semiconductor light emitting devices.
  • the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. there is.
  • the red semiconductor light emitting device has a circular shape
  • the green semiconductor light emitting device has a first oval shape with a first minor axis and a second major axis
  • the blue semiconductor light emitting device has a second oval shape with a second minor axis and a second major axis.
  • the second major axis of the oval shape of the blue semiconductor light emitting device may be greater than the second major axis of the oval shape of the green semiconductor light emitting device
  • the second minor axis of the oval shape of the blue semiconductor light emitting device may be smaller than the first minor axis of the oval shape of the green semiconductor light emitting device.
  • methods for mounting the semiconductor light emitting device 150 on the substrate 200 may include, for example, a self-assembly method (FIG. 8) and a transfer method.
  • Figure 8 is a diagram showing an example in which a light emitting device according to an embodiment is assembled on a substrate by a self-assembly method.
  • the assembled substrate 200 which will be described later, can also function as the panel substrate 200a in a display device after assembly of the light emitting device, but the embodiment is not limited thereto.
  • the semiconductor light emitting device 150 may be introduced into the chamber 1300 filled with the fluid 1200, and the semiconductor light emitting device 150 may be placed on the assembly substrate ( 200). At this time, the light emitting device 150 adjacent to the assembly hole 207H of the assembly substrate 200 may be assembled into the assembly hole 207H by DEP force caused by the electric field of the assembly wiring.
  • the fluid 1200 may be water such as ultrapure water, but is not limited thereto.
  • the chamber may be called a water tank, container, vessel, etc.
  • the assembled substrate 200 may be placed on the chamber 1300. Depending on the embodiment, the assembled substrate 200 may be input into the chamber 1300.
  • the semiconductor light emitting device 150 may include a magnetic layer (not shown) containing a magnetic material.
  • the magnetic layer may include a magnetic metal such as nickel (Ni). Since the semiconductor light emitting device 150 introduced into the fluid includes a magnetic layer, it can move to the assembly substrate 200 by the magnetic field generated from the assembly device 1100.
  • the magnetic layer may be disposed on the top or bottom or on both sides of the light emitting device.
  • the semiconductor light emitting device 150 may include a passivation layer surrounding the top and side surfaces.
  • the passivation layer can be formed using an inorganic insulator such as silica or alumina through PECVD, LPCVD, sputtering deposition, etc. Additionally, the passivation layer can be formed by spin coating an organic material such as photoresist or polymer material.
  • the semiconductor light emitting device 150 may include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between them.
  • the first conductive semiconductor layer may be an n-type semiconductor layer
  • the second conductive semiconductor layer may be a p-type semiconductor layer, but are not limited thereto.
  • the first conductive semiconductor layer, the second conductive semiconductor layer, and the active layer disposed between them may constitute a light emitting unit.
  • the light emitting part may be called a light emitting layer, a light emitting area, etc.
  • a first electrode (layer) may be disposed under the first conductivity type semiconductor layer, and a second electrode (layer) may be disposed on the second conductivity type semiconductor layer.
  • a partial area of the first conductivity type semiconductor layer or the second conductivity type semiconductor layer may be exposed to the outside. Accordingly, in the manufacturing process of the display device after the semiconductor light emitting device 150 is assembled on the assembly substrate 200, some areas of the passivation layer may be etched.
  • the first electrode may include at least one layer.
  • the first electrode may include an ohmic layer, a reflective layer, a magnetic layer, a conductive layer, an anti-oxidation layer, an adhesive layer, etc.
  • the ohmic layer may include Au, AuBe, etc.
  • the reflective layer may include Al, Ag, etc.
  • the magnetic layer may include Ni, Co, etc.
  • the conductive layer may include Cu or the like.
  • the anti-oxidation layer may include Mo and the like.
  • the adhesive layer may include Cr, Ti, etc.
  • the second electrode may include a transparent conductive layer.
  • the second electrode may include ITO, IZO, etc.
  • the assembly substrate 200 may include a pair of first assembly wiring lines 201 and second assembly wiring lines 202 corresponding to each of the semiconductor light emitting devices 150 to be assembled.
  • Each of the first assembled wiring 201 and the second assembled wiring 202 may be formed by stacking multiple single metals, metal alloys, metal oxides, etc.
  • the first assembled wiring 201 and the second assembled wiring 202 each have Cu, Ag, Ni, Cr, Ti, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf It may be formed including at least one of the following, but is not limited thereto.
  • the gap between the first assembly wiring 201 and the second assembly wiring 202 may be smaller than the width of the semiconductor light emitting device 150 and the width of the assembly hole 207H, and the assembly of the semiconductor light emitting device 150 using an electric field. The position can be fixed more precisely.
  • An insulating layer 215 is formed on the first assembled wiring 201 and the second assembled wiring 202 to protect the first assembled wiring 201 and the second assembled wiring 202 from the fluid 1200, and Leakage of current flowing through the first assembly wiring 201 and the second assembly wiring 202 can be prevented.
  • the insulating layer 215 may be formed of a single layer or multiple layers of an inorganic insulator such as silica or alumina or an organic insulator.
  • the insulating layer 215 may have a minimum thickness to prevent damage to the first assembly wiring 201 and the second assembly wiring 202 when assembling the semiconductor light emitting device 150. can have a maximum thickness for stable assembly.
  • a partition 207 may be formed on the insulating layer 215. Some areas of the partition wall 207 may be located on top of the first assembly wiring 201 and the second assembly wiring 202, and the remaining area may be located on the top of the assembly substrate 200.
  • An assembly hole 207H where the semiconductor light emitting devices 150 are coupled is formed in the assembly substrate 200, and the surface where the assembly hole 207H is formed may be in contact with the fluid 1200.
  • the assembly hole 207H can guide the exact assembly position of the semiconductor light emitting device 150.
  • the assembly hole 207H may have a shape and size corresponding to the shape of the semiconductor light emitting device 150 to be assembled at the corresponding location. Accordingly, it is possible to prevent another semiconductor light emitting device from being assembled or a plurality of semiconductor light emitting devices from being assembled into the assembly hole 207H.
  • the assembly device 1100 that applies a magnetic field may move along the assembled substrate 200.
  • Assembly device 1100 may be a permanent magnet or an electromagnet.
  • the assembly device 1100 may move while in contact with the assembly substrate 200 in order to maximize the area to which the magnetic field is applied within the fluid 1200.
  • the assembly device 1100 may include a plurality of magnetic materials or may include a magnetic material of a size corresponding to that of the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may be limited to within a predetermined range.
  • the semiconductor light emitting device 150 in the chamber 1300 may move toward the assembly device 1100 and the assembly substrate 200 by the magnetic field generated by the assembly device 1100.
  • the semiconductor light emitting device 150 may enter the assembly hole 207H and be fixed by the DEP force formed by the electric field between the assembly wires 201 and 202 while moving toward the assembly device 1100.
  • the first and second assembly wirings 201 and 202 generate an electric field using an AC power source, and a DEP force may be formed between the assembly wirings 201 and 202 due to this electric field.
  • the semiconductor light emitting device 150 can be fixed to the assembly hole 207H on the assembly substrate 200 by this DEP force.
  • a predetermined solder layer (not shown) is formed between the light emitting device 150 assembled on the assembly hole 207H of the assembly substrate 200 and the assembly wiring 201 and 202 to improve the bonding force of the light emitting device 150. It can be improved.
  • a molding layer (not shown) may be formed in the assembly hole 207H of the assembly substrate 200.
  • the molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.
  • the time required to assemble each semiconductor light-emitting device on a substrate can be drastically shortened, making it possible to implement a large-area, high-pixel display more quickly and economically.
  • FIGS. 9 to 19 Descriptions omitted below can be easily understood from FIGS. 1 to 8 and the description given above in relation to the corresponding drawings.
  • Figure 9 is a plan view showing a sub-pixel according to the first embodiment.
  • the sub-pixel (PX) may include a first assembly wiring 321, a second assembly wiring 322, a partition 340, and a semiconductor light-emitting device 150. .
  • the first assembly wiring 321 and the second assembly wiring 322 may be arranged side by side with each other.
  • the first assembly wiring 321 and the second assembly wiring 322 may be electrodes for forming DEP force.
  • the semiconductor light emitting device 150 may be assembled into the first hole 340H of the partition 340 by the DEP force formed between the first assembly wiring 321 and the second assembly wiring 322.
  • the gap between the first assembly wiring 321 and the second assembly wiring 322 may be defined as a gap G1.
  • the gap G1 may be located at an edge area of the first hole 340H.
  • the gap G1 may be located along the edge area of the first hole 340H.
  • the second assembly wiring 322 may surround a partial area of the first assembly wiring 321.
  • a partial area of the first assembly wiring 321 may be located in the center area of the first hole 340H.
  • Some areas of the first assembly wiring 321 may be protruding electrodes 321-3, which will be described in detail later.
  • the second assembled wiring 322 has a predetermined gap G1 with a partial region of the first assembled wiring 321 and is formed along the outer circumference of the partial region of the first assembled wiring 321, that is, the first hole 340H. ) can be placed along the edge area. Accordingly, when the semiconductor light emitting device 150 is assembled in the first hole 340H, the gap G1 may be located along the edge area of the lower side of the semiconductor light emitting device 150. In this case, DEP force may be formed along the edge area of the first hole 340H by the alternating voltage applied to the first assembly wiring 321 and the second assembly wiring 322.
  • the semiconductor light emitting device 150 Since the DEP force formed along the edge area of the first hole 340H directly affects the edge area below the semiconductor light emitting device 150, the semiconductor light emitting device 150 is stably assembled in the first hole 340H without being shaken. It can be. In particular, since the DEP force is greatest along the edge area of the first hole 340H, the edge area on the lower side of the semiconductor light emitting device 150 is affected by the largest DEP force, and is pushed to the bottom of the first hole 340H. Because it is pulled strongly, it does not twist or tilt.
  • the second assembly wiring 322 may include a second hole 320H.
  • the second hole 320H may be formed through the second assembly wiring 322. That is, the second hole 320H can be formed by removing a portion of the second assembly wiring 322 from the upper surface to the lower surface.
  • the diameter D2 of the second hole 320H may be smaller than the diameter D1 of the first hole 340H. Accordingly, the second hole 320H may be formed within the first hole 340H. In other words, the first hole 340H may surround the second hole 320H.
  • the reason why the diameter D2 of the second hole 320H is smaller than the diameter D1 of the first hole 340H is because the protruding electrode 321-3 is disposed in the second hole 320H. That is, by disposing the protruding electrode 321-3 in the second hole 320H, the protruding electrode 321-3 may be surrounded by the second assembly wiring 322. At this time, the gap between the protruding electrode 321-3 and the second assembled wiring 322, that is, the gap G1, may be located along the circumference of the protruding electrode 321-3. For example, the gap G1 may form a closed loop along the circumference of the protruding electrode 321-3, but this is not limited.
  • Figure 10 is a cross-sectional view taken along line C1-C2 in Figure 9.
  • the sub-pixel (PX) includes a substrate 310, a first assembly wiring 321, a second assembly wiring 322, a partition 340, and a semiconductor light emitting device 150. ) may include.
  • the substrate is a support member that supports components disposed on the substrate 310 or a protection member that protects the components, and may be the substrate 200 shown in FIG. 7 .
  • the first assembly wiring 321 and the second assembly wiring 322 may be disposed on the substrate.
  • the first assembly wiring 321 and the second assembly wiring 322 may be made of metal with excellent electrical conductivity.
  • the first assembled wiring 321 and/or the second assembled wiring 322 may include at least one reflective layer having excellent light reflectivity. In this case, light traveling downward from the semiconductor light emitting device 150 is reflected upward, thereby improving light efficiency.
  • first assembly wiring 321 and the second assembly wiring 322 may each have a multi-layer structure, but this is not limited.
  • the first assembled wiring 321 may include a main electrode 321-1, an extension electrode 321-2, and a protruding electrode 321-3.
  • the main electrode 321-1 may be arranged long along the Y direction (hereinafter referred to as the second direction).
  • the main electrode 321-1 of the first assembly wiring 321 may be a main electrical path for supplying the first voltage supplied from the outside to each sub-pixel PX.
  • the extension electrode 321-2 may be disposed along the X-axis direction (hereinafter referred to as the first direction).
  • the extension electrode 321-2 may be disposed along the first direction in each sub-pixel PX.
  • the extension electrode 321-2 may extend from the main electrode 321-1 toward the second assembly wiring 322.
  • the main electrode 321-1 and the extension electrode 321-2 may be formed integrally.
  • the main electrode 321-1 and the extension electrode 321-2 may be disposed on the same layer.
  • the main electrode 321-1 and the extension electrode 321-2 may include the same metal.
  • the main electrode 321-1 and the extension electrode 321-2 may be formed simultaneously using the same metal and through the same patterning process.
  • the protruding electrode 321-3 may be electrically connected to the extension electrode 321-2.
  • the protruding electrode 321-3 may be disposed on the extension electrode 321-2.
  • the protruding electrode 321-3 may protrude in the Z direction (hereinafter referred to as the third direction) on the extension electrode 321-2. Accordingly, the protruding electrode 321-3 may be electrically connected to the extension electrode 321-2 in the vertical direction.
  • the protruding electrode 321-3 may not be formed integrally with the main electrode 321-1 and the extension electrode 321-2.
  • the protruding electrode 321-3 may include a metal different from the metal included in the main electrode 321-1 and the extension electrode 321-2, but is not limited thereto.
  • the protruding electrode 321-3 may be formed through a patterning process that is different from the patterning process for forming the main electrode 321-1 and the extension electrode 321-2.
  • the protruding electrode 321-3 may include the same metal as the metal included in the second assembly wiring 322.
  • the protruding electrode 321-3 may be disposed on the same layer as the second assembly wiring 322.
  • the protruding electrode 321-3 and the second assembled wiring 322 may be formed simultaneously using the same metal and through the same patterning process.
  • the first voltage applied from the first assembly wiring 321 to the main electrode 321-1 may be supplied to the protruding electrode 321-3 via the extension electrode 321-2.
  • the second assembly wiring 322 may include a main electrode 322-1 and an auxiliary electrode 322-2.
  • the main electrode 322-1 may be disposed long along the second direction.
  • the main electrode 322-1 of the second assembly wiring 322 may be arranged in parallel with the main electrode 322-1 of the first assembly wiring 321.
  • the main electrode 322-1 of the second assembly wiring 322 may be an electrical path for supplying an externally supplied second voltage to each sub-pixel PX.
  • the first voltage may be periodically changed to a positive voltage and a negative voltage based on the second voltage, or the second voltage may be periodically changed to a positive voltage and a negative voltage based on the first voltage.
  • the first voltage and the second voltage may be changed to voltages of opposite polarity to each other.
  • the first voltage when the first voltage is a positive voltage, the second voltage may be a negative voltage, and when the first voltage is a negative voltage, the second voltage may be a positive voltage.
  • the auxiliary electrode 322-2 may be disposed along the first direction.
  • the auxiliary electrode 322-2 may extend from the main electrode 322-1 toward the first assembly wiring 321.
  • the extension electrode 321-2 of the first assembled wiring 321 and the auxiliary electrode 322-2 of the second assembled wiring 322 may be disposed in the sub-pixel PX. That is, the main electrode 322-1 of the first assembled wiring 321 is arranged to pass through each sub-pixel PX arranged along the second direction, and the extension electrode 321-1 of the first assembled wiring 321 is disposed. 2) may extend from the main electrode 322-1 in each sub-pixel (PX).
  • the main electrode 322-1 of the second assembly wiring 322 is disposed to pass through each sub-pixel PX arranged along the second direction, and the auxiliary electrode 322-2 of the second assembly wiring 322 may extend from the main electrode 322-1 in each sub-pixel (PX).
  • the auxiliary electrode 322-2 and the extension electrode 321-2 of the first assembly wiring 321 may extend in opposite directions.
  • the extension electrode 321-2 extends along the X(-) direction from the first assembled wiring 321, and the auxiliary electrode 322-2 extends along the It may be extended accordingly.
  • the main electrode 322-1 and the auxiliary electrode 322-2 may be formed integrally.
  • the main electrode 322-1 and the auxiliary electrode 322-2 may be disposed on the same layer.
  • the main electrode 322-1 and the auxiliary electrode 322-2 may include the same metal.
  • the main electrode 322-1 and the auxiliary electrode 322-2 may be formed simultaneously using the same metal and using the same patterning process.
  • the main electrode 322-1, the auxiliary electrode 322-2, and the protruding electrode 321-3 of the first assembly wiring 321 may be disposed on the same layer.
  • the protruding electrode 321-3 of the first cooking wire may also include the same metal as each of the main electrode 322-1 and/or the auxiliary electrode 322-2.
  • the main electrode 322-1, the auxiliary electrode 322-2, and the protruding electrode 321-3 of the first assembly wiring 321 may be formed simultaneously using the same metal and through the same patterning process.
  • the auxiliary electrode 322-2 of the second assembly wiring 322 may include a second hole 320H.
  • the protruding electrode 321-3 of the first assembled wiring 321 may be disposed in the second hole 320H of the auxiliary electrode 322-2. Since the protruding electrode 321-3 is disposed in the second hole 320H of the auxiliary electrode 322-2, the auxiliary electrode 322-2 may surround the protruding electrode 321-3.
  • a predetermined gap G1 may be formed between the protruding electrode 321-3 of the first assembled wiring 321 and the auxiliary electrode 322-2 of the second assembled wiring 322. That is, the protruding electrode 321-3 of the first assembled wiring 321 and the auxiliary electrode 322-2 of the second assembled wiring 322 may be spaced apart from each other by a predetermined gap G1.
  • the gap G1 may be located along the edge area of the first hole 340H. Accordingly, when the semiconductor light emitting device 150 is assembled in the first hole 340H, a gap G1 may be located along the edge area of the lower side of the semiconductor light emitting device 150. Therefore, a strong DEP force is formed in the gap G1, and since the DEP force is formed as a closed loop along the edge area of the first hole 340H, a strong DEP force is formed along the edge area of the lower side of the semiconductor light emitting device 150. is applied, the semiconductor light emitting device 150 can be stably assembled in the first hole 340H without shaking or distortion.
  • the center of the second hole 320H may coincide with the center of the first hole 340H.
  • the diameter D2 of the second hole 320H may be smaller than the diameter D1 of the first hole 340H.
  • the gap G1 between the outer surface of the protruding electrode 321-3 and the inner surface of the auxiliary electrode 322-2 may be the same along the circumference of the protruding electrode 321-3, but this is not limited. No.
  • the second hole 320H may correspond to the shape of the semiconductor light emitting device 150.
  • the second hole 320H may also be circular.
  • the diameter D11 of the semiconductor light emitting device 150 may be smaller than the diameter D1 of the first hole 340H.
  • the diameter D11 of the semiconductor light emitting device 150 may be equal to or larger than the diameter D2 of the second hole 320H.
  • the second hole 320H may have a shape corresponding to the shape of the protruding electrode 321-3.
  • the protruding electrode 321-3 may have a shape corresponding to the shape of the semiconductor device.
  • the protruding electrode 321-3 may also be circular.
  • the diameter D3 of the protruding electrode 321-3 may be smaller than the diameter D11 of the semiconductor light emitting device 150.
  • the diameter D3 of the protruding electrode 321-3 is smaller than the diameter D11 of the semiconductor light emitting device 150, so that the protruding electrode 321-3 and the auxiliary electrode 322 are formed along the circumference of the protruding electrode 321-3.
  • the gap G1 is formed by the gap between -2), the gap G1 may be located in the edge area of the lower side of the semiconductor light emitting device 150.
  • the protruding electrode 321-3 is shown in the drawing as having a plate shape, it may be composed of a plurality of branch electrodes branched from a central region or a ring electrode having a ring shape.
  • the partition wall 340 may be disposed on the first assembly wiring 321 and the second assembly wiring 322.
  • the partition 340 may include a first hole 340H.
  • a first hole 340H may be formed in each sub-pixel PX, and the first hole 340H may be formed in the partition wall 340.
  • the first hole 340H can be formed by removing the corresponding insulating film for each sub-pixel PX. .
  • the first hole 340H may be a through hole removed from the top to the bottom of the corresponding insulating film.
  • the semiconductor light emitting device 150 may be one of a red semiconductor light emitting device, a green semiconductor light emitting device, and a blue light emitting device.
  • a red semiconductor light-emitting device, a green semiconductor light-emitting device, and a blue semiconductor light-emitting device in adjacent sub-pixels (PX)
  • red light and green light are emitted from each of the red semiconductor light-emitting device, green semiconductor light-emitting device, and blue semiconductor light-emitting device.
  • an image may be displayed by blue light.
  • the sub-pixel (PX) includes a first insulating layer 330, a second insulating layer 335, a connection electrode 370, a third insulating layer 350, and It may include electrode wiring 360.
  • the first insulating layer 330 may be disposed on the first assembly wiring 321.
  • the second assembly wiring 322 may be disposed on the first insulating layer 330 .
  • the second insulating layer 335 may be disposed on the second assembly wiring 322 .
  • the first insulating layer 330 may electrically insulate the first assembled wiring 321 and the second assembled wiring 322.
  • the second insulating layer 335 may protect the second assembly wiring 322 from being contaminated by external foreign substances.
  • the second insulating layer 335 can protect the second assembly wiring 322 from being corroded by the fluid 1200 in the chamber (1300 in FIG. 8) during self-assembly.
  • the first insulating layer 330 and the second insulating layer 335 may be made of an insulating material.
  • the first insulating layer 330 and the second insulating layer 335 may be made of the same material.
  • the first insulating layer 330 and the second insulating layer 335 may be made of an inorganic material such as SiOx or SiNx, but this is not limited.
  • the first insulating layer 330 and the second insulating layer 335 may be made of different materials.
  • the second insulating layer 335 may be made of an insulating material with a high dielectric constant related to DEP force.
  • connection electrode 370 may be disposed in the first hole 340H.
  • connection electrode 370 may be disposed around the semiconductor light emitting device 150 within the first hole 340H.
  • connection electrode 370 may be disposed on a side of the semiconductor light emitting device 150.
  • the connection electrode 370 may be connected to the first electrode 154 of the semiconductor light emitting device 150.
  • the connection electrode 370 may be connected to the side of the first electrode 154 of the semiconductor light emitting device 150.
  • connection electrode 370 may be disposed along the perimeter of the semiconductor light emitting device 150 within the first hole 340H.
  • the connection electrode 370 may be disposed along the circumference of the semiconductor light emitting device 150 between the inner surface of the first hole 340H and the outer surface of the semiconductor light emitting device 150. In this way, the connection electrode 370 is disposed along the circumference of the semiconductor light-emitting device 150 within the first hole 340H, so that the partition 340 and the semiconductor light-emitting device 150 are tightly connected by the connection electrode 370. By being fixed, fixation can be strengthened.
  • the side of the semiconductor region 150 may be connected to the second assembly wiring 322 through the connection electrode 370.
  • the side of the semiconductor light emitting device 150 may be connected to the first assembly wiring 321 through the connection electrode 370.
  • the connection electrode 370 may penetrate the second assembly wiring 322 and the first insulating layer 330 and be connected to the first assembly wiring 321.
  • the third insulating layer 350 may be disposed on the first hole 340H and the partition wall 340.
  • the third insulating layer is disposed in the first hole 340H to protect the connection electrode 370 disposed in the first hole 340H from external shock or external foreign substances.
  • the third insulating layer 350 may be a planarization layer. That is, since the third insulating layer 350 has a flat upper surface, the electrode wiring 360 can be easily formed on the upper surface.
  • the third insulating layer 350 may be made of an organic material to easily form a large thickness, but this is not limited.
  • the electrode wire 360 may be disposed on the third insulating layer 350.
  • the electrode wire 360 may be connected to the upper side of the semiconductor light emitting device 150 through the third insulating layer 350.
  • the electrode wire 360 may be connected to the second electrode 155 of the semiconductor light emitting device 150 through the insulating layer 350.
  • the passivation layer 157 of the semiconductor light emitting device 150 may be etched together when the third insulating layer 350 is etched to form a contact hole.
  • the semiconductor light emitting device 150 may emit light.
  • the first conductive semiconductor layer 151 includes an n-type dopant
  • the second conductive semiconductor layer 152 includes a p-type dopant
  • the electrode wiring 360 and the second conductive semiconductor layer 152 contain a p-type dopant.
  • Voltage may be applied to the assembly wiring 322. In this case, a current flows through the electrode wiring 360, the semiconductor light emitting device 150, the connection electrode 370, and the second assembly wiring 322, and the semiconductor light emitting device 150 may emit light due to this current. .
  • each of the extension electrode 321-2 of the first assembled wiring 321 and the auxiliary electrode 322-2 of the second assembled wiring 322 are shown as having a round shape when viewed from above. It may have an angular or other shape.
  • FIG. 11A is a plan view showing a DEP force formed between the protruding electrode of the first assembled wiring and the auxiliary electrode of the second assembled wiring in the sub-pixel according to the first embodiment.
  • FIG. 11B is a cross-sectional view showing a semiconductor light emitting device being assembled by a DEP force formed between the protruding electrode of the first assembly wiring and the auxiliary electrode of the second assembly wiring in the sub-pixel according to the first embodiment.
  • FIG. 12 is a cross-sectional view showing the completed assembly of the semiconductor light emitting device by the DEP force formed between the protruding electrode of the first assembly wiring and the auxiliary electrode of the second assembly wiring in the sub-pixel according to the first embodiment.
  • FIGS. 11A to 12 are schematic illustrations for convenience of explanation, and components omitted from FIGS. 11A to 12 can be easily understood from FIGS. 9 and 10.
  • the semiconductor light emitting device 150 moving in the fluid 1200 may be pulled by the DEP force formed in the first hole 340H and inserted into the first hole 340H.
  • the edge area below the semiconductor light emitting device 150 corresponds to the edge area of the first hole 340H, and the largest DEP force may be formed along the edge area of the first hole 340H. Therefore, when the semiconductor light-emitting device 150 is inserted into the first hole 340H, the edge region on the lower side of the semiconductor light-emitting device 150 is uniform due to the largest DEP forced formed along the edge region in the first hole 340H. Because it is strongly pulled, the semiconductor light emitting device 150 can be stably assembled in the first hole 340H.
  • the semiconductor light emitting device 150 is pulled by the largest DEP force formed at the edge area of the first hole 340H, so that the semiconductor light emitting device 150 is pulled into the first hole 340H. It can be continuously fixed within the first hole 340H without falling out.
  • a first hole 340H in which the semiconductor light emitting device 150 is assembled is provided, and the auxiliary electrode 322-2 of the second assembly wiring 322 is disposed in the first hole 340H.
  • a second hole 320H having a diameter D2 smaller than the diameter D1 of the first hole 340H may be formed in the auxiliary electrode 322-2.
  • a predetermined gap G1 may be formed between a partial area of the first assembly wiring 321 and the auxiliary electrode 322-2 of the second assembly wiring 322.
  • the corresponding gap G1 may be formed along the perimeter of the partial protruding area. That is, the gap G1 may be formed along the edge area of the first hole 340H.
  • the largest DEP force may be formed in the corresponding gap G1.
  • the largest DEP force may be formed along the edge area of the first hole 340H.
  • the edge area of the first hole 340H may correspond to the edge area below the semiconductor light emitting device 150 when the semiconductor light emitting device 150 is assembled in the first hole 340H.
  • the semiconductor light emitting device 150 can be stably inserted into the first hole 340H without being distorted or tilted. Due to the largest DEP force, the semiconductor light emitting device 150 may be firmly fixed within the first hole 340H without being separated from the first hole 340H.
  • FIGS. 13A and 13B illustrate forming the first assembled wiring 321.
  • the first assembly wiring 321 may be formed on the substrate.
  • the first assembly wiring 321 may include a main electrode 321-1 and an extension electrode 321-2 extending from the main electrode 321-1.
  • the extension electrode 321-2 may be formed in a sub-pixel (PX in FIG. 9).
  • PX sub-pixel
  • the main electrode 321-1 is formed along one direction, and the extension electrode 321-2 extends from the main electrode 321-1. may be formed in each sub-pixel (PX).
  • the first assembled wiring 321 including the main electrode 321-1 and the extension electrode 321-2 can be formed on the substrate.
  • the first assembly wiring 321 since the first assembly wiring 321 must function as an electrode, it may be made of a metal with excellent electrical conductivity. In addition, the first assembly wiring 321 may be made of a metal with excellent durability to prevent corrosion. The first assembly wiring 321 may have a single-layer or multi-layer structure.
  • a first insulating layer 330 may be formed on a substrate including the first assembly wiring 321 .
  • the first insulating layer 330 may be made of an insulating material with excellent insulating properties.
  • the second assembled wiring 322 may be formed on the first insulating layer 330.
  • the second assembly wiring 322 may include a main electrode 322-1 and an auxiliary electrode 322-2 extending from the main electrode 322-1.
  • the auxiliary electrode 322-2 may be formed in the sub-pixel PX.
  • the main electrode 322-1 is formed along one direction, and the auxiliary electrode 322-2 extends from the main electrode 322-1. may be formed in each sub-pixel (PX).
  • the main electrode 321-1 of the first assembled wiring 321 and the main electrode 322-1 of the second assembled wiring 322 are disposed in different layers and do not vertically overlap each other.
  • the main electrode 321-1 of the first assembly wiring 321 and the main electrode 322-1 of the second assembly wiring 322 may be arranged parallel to each other along one direction.
  • the extension electrode 321-2 of the first assembly wiring 321 and the auxiliary electrode 322-2 of the second assembly wiring 322 are disposed in different layers and may overlap vertically in the sub-pixel PX. there is. That is, in the sub-pixel PX, the extension electrode 321-2 is disposed under the first insulating layer 330 of the first assembled wiring 321, and the second assembled wiring ( The auxiliary electrode 322-2 of 322) may be disposed.
  • the auxiliary electrode 322-2 of the second assembly wiring 322 may include a second hole 320H.
  • the second hole 320H may be formed within the first hole (340H in FIG. 15B) to be formed later.
  • the first hole 340H may surround the second hole 320H.
  • a protruding electrode 321-3 may be disposed on the first insulating layer 330.
  • the protruding electrode 321-3 may be formed in the second hole 320H of the auxiliary electrode 322-2.
  • the auxiliary electrode 322-2 may surround the protruding electrode 321-3.
  • the inner surface of the auxiliary electrode 322-2 and the outer surface of the protruding electrode 321-3 may be spaced apart from each other.
  • the separation distance between the inner surface of the auxiliary electrode 322-2 and the outer surface of the protruding electrode 321-3 may be defined as a predetermined gap G1.
  • the first hole 340H may have a shape corresponding to the shape of the semiconductor light emitting device 150. Since the second hole 320H must form a corresponding gap G1 corresponding to the edge area of the lower side of the semiconductor light-emitting device 150, it may have a shape corresponding to the shape of the semiconductor light-emitting device 150. For example, when the semiconductor light emitting device 150 is circular when viewed from above, the first hole 340H and the second hole 320H may each be circular.
  • the size of the DEP force formed in the gap (G1) may vary.
  • a corresponding gap G1 is formed along the circumference of the protruding electrode 321-3, and the size of this gap G1 may be constant along the circumference of the protruding electrode 321-3.
  • the protruding electrode 321-3 may have a shape corresponding to the shape of the second hole 320H.
  • the protruding electrode 321-3 may also have a circular shape.
  • the protruding electrode 321-3 may penetrate the first insulating layer 330 and be connected to the extension electrode 321-2 of the first assembled wiring 321.
  • the protruding electrode 321-3 and the extension electrode 321-2 of the first assembly wiring 321 may overlap vertically.
  • the size (or diameter) of the protruding electrode 321-3 may be smaller than the size of the extension electrode 321-2 of the first assembled wiring 321, but this is not limited.
  • the protruding electrode 321-3 may be disposed on the same layer as the main electrode 322-1 and the auxiliary electrode 322-2 of the second assembly wiring 322. That is, the main electrode 322-1, the auxiliary electrode 322-2, and the protruding electrode 321-3 of the second assembled wiring 322 may be formed on the first insulating layer 330.
  • the main electrode 322-1, the auxiliary electrode 322-2, and the protruding electrode 321-3 of the second assembly wiring 322 may be formed simultaneously using the same metal and through the same process.
  • the first insulating layer 330 is formed on the substrate, a portion of the first insulating layer 330 corresponding to the extension electrode 321-2 of the first assembly wiring 321 is removed to form a through hole. It can be. Thereafter, a metal film is deposited on the first insulating layer 330 and patterned, thereby forming the main electrode 322-1, the auxiliary electrode 322-2, and the protruding electrode 321-3 of the second assembly wiring 322. This can be formed. At this time, the protruding electrode 321-3 may be connected to the extension electrode 321-2 of the first assembled wiring 321 through a through hole formed in the first insulating layer 330.
  • a second insulating layer 335 is formed on the first insulating layer 330 including the second assembly wiring 322, and a partition wall ( 340) can be formed.
  • the second insulating layer 335 may be formed to protect the second assembly wiring 322.
  • the second insulating layer 335 may be formed of an insulating material with a dielectric constant to increase DEP force.
  • the partition 340 and the second insulating layer 335 may be formed of different materials, but are not limited thereto.
  • the partition wall 340 corresponding to the auxiliary electrode 322-2 of the second assembly line 322 is removed in the sub-pixel PX, thereby forming a first hole 340H. That is, the first hole 340H can be formed by removing the partition wall 340 corresponding to the auxiliary electrode 322-2 of the second assembly wiring 322 so that the upper surface of the second insulating layer 335 is exposed. there is.
  • the substrate on which the first hole 340H is formed can be mounted in the chamber (1300 in FIG. 8) for self-assembly.
  • the partition wall 340 or the first hole 340H may be in contact with the fluid.
  • an alternating current voltage is applied to the first assembled wiring 321 and the second assembled wiring 322, so that the protruding electrode 321-3 of the first assembled wiring 321 is formed along the edge area of the first hole 340H.
  • a DEP force may be formed between the auxiliary electrode 322-2 and the second assembly wiring 322.
  • the largest DEP force may be formed between the end of the protruding electrode 321-3 of the first assembly wire 321 and the end of the auxiliary electrode 322-2 of the second assembly wire 322. Accordingly, the semiconductor light emitting device 150 moving in the fluid may pass through the first hole 340H and then be inserted into the first hole 340H by the DEP force formed along the edge area of the first hole 340H.
  • the DEP force is applied along the edge area of the lower side of the semiconductor light-emitting device 150, so that the semiconductor light-emitting device 150 is pulled to the bottom of the first hole 340H, and then continues to be pulled into the first hole 340H by the DEP force. ) can be firmly fixed.
  • the substrate may be detached from the chamber and a drying process may be performed.
  • the second insulating layer 335 may be removed from the first hole 340H. By removing the second insulating layer 335, the upper surface of the auxiliary electrode 322-2 of the second assembled wiring 322 may be exposed.
  • connection electrode 370 can be formed along the circumference of the semiconductor light emitting device 150 within the first hole 340H.
  • the side of the semiconductor light emitting device 150 that is, the side of the first electrode 154, and the auxiliary electrode 322-2 of the second assembly wiring 322 may be electrically connected by the connection electrode 370.
  • a third insulating layer may be formed on the semiconductor light emitting device 150 and the partition wall 340. Thereafter, the barrier rib 340 is removed to expose the upper side of the semiconductor light emitting device 150, thereby forming a contact hole. In addition, the passivation layer 157 of the semiconductor light emitting device 150 corresponding to the contact hole of the third insulating layer may be removed.
  • the electrode wiring 360 may be formed by depositing and patterning a metal film on the third insulating layer.
  • the electrode wire 360 may penetrate the third insulating layer and be electrically connected to the second electrode 155 of the semiconductor light emitting device 150.
  • Figure 17 is a plan view showing a display device according to the first embodiment. Although the electrical connections of the semiconductor light emitting elements 150-1, 150-2, and 150-3 are not shown in FIG. 17, these electrical connections are the same as the electrical connections shown in FIG. 10, and can be easily understood from FIG. 10. You can.
  • the display device 300 may be provided with a plurality of sub-pixels (PX1, PX2, and PX3).
  • FIG. 17 typically includes only three sub-pixels (PX1, PX2, and PX3), a plurality of sub-pixels may be arranged in a matrix.
  • a single pixel may be defined by three sub-pixels (PX1, PX2, and PX3).
  • a color image can be implemented by unit pixels.
  • the first to third sub-pixels (PX1, PX2, and PX3) within a unit pixel may be arranged along one direction or adjacent to each other.
  • a unit pixel includes a fourth sub-pixel, and a semiconductor light-emitting device may not be disposed in the fourth sub-pixel.
  • the first semiconductor light-emitting device 150-1 is disposed in the first sub-pixel PX1
  • the second semiconductor light-emitting device 150-2 is disposed in the second sub-pixel PX2
  • the third sub-pixel A third semiconductor light emitting device 150-3 may be disposed at (PX3).
  • the first semiconductor light emitting device 150-1 emits first light, that is, red light
  • the second semiconductor light emitting device 150-2 emits second light, that is, green light
  • the third semiconductor light emitting device 150-2 emits first light, that is, red light
  • the device 150-3 may emit third light, that is, blue light. Accordingly, the image will be displayed by the red light of the first semiconductor light-emitting device 150-1, the green light of the second semiconductor light-emitting device 150-2, and the blue light of the third semiconductor light-emitting device 150-3. You can.
  • the first sub-pixel (PX1) includes the first assembly wiring 321, the second assembly wiring 322, the first hole 340H1, and the first semiconductor light emitting device 150-1. It can be included.
  • the second sub-pixel PX2 may include a first assembly wiring 323, a second assembly wiring 324, a first hole 340H2, and a second semiconductor light emitting device 150-2.
  • the third sub-pixel PX3 may include a first assembly wiring 325, a second assembly wiring 326, a first hole 340H3, and a third semiconductor light emitting device 150-3.
  • the first assembly wirings 321, 323, and 325 include main electrodes 321-1, 323-1, and 325-1, and extension electrodes 321 extending from the main electrodes 321-1, 323-1, and 325-1. -2, 323-2, 325-2) and protruding electrodes (321-3, 323-3, 325-3) protruding upward from the extension electrodes (321-2, 323-2, 325-2). can do.
  • the second assembly wiring (322, 324, 326) is connected to the main electrode (322-1, 324-1, 326-1) and the auxiliary electrode (322) extending from the main electrode (322-1, 324-1, 326-1). -2, 324-2, 326-2).
  • the extension electrodes 321-2, 323-2, and 325-2 of the first assembly wirings 321, 323, and 325 and the auxiliary electrodes 322-2, 324 of the second assembly wirings 322, 324, and 326. -2, 326-2) can be vertically overlapped.
  • the protruding electrodes 321-3, 323-3, and 325-3 of the first assembly wirings 321, 323, and 325 and the main electrodes 322-1, 324 of the second assembly wirings 322, 324, and 326. -1, 326-1) and auxiliary electrodes (322-2, 324-2, 326-2) may be disposed on the same layer.
  • the protruding electrodes 321-3, 323-3, and 325-3 of the first assembly wirings 321, 323, and 325 and the main electrodes 322-1, 324 of the second assembly wirings 322, 324, and 326. -1, 326-1) and the auxiliary electrodes (322-2, 324-2, 326-2) may include the same metal.
  • the protruding electrodes 321-3, 323-3, and 325-3 of the wires are electrically connected to the extension electrodes 321-2, 323-2, and 325-2 of the first assembled wires 321, 323, and 325. can be connected
  • the auxiliary electrodes 322-2, 324-2, and 326-2 of the second assembly wirings 322, 324, and 326 include second holes 320H1, 320H2, and 320H3, and the second holes 320H1, 320H2, and
  • the protruding electrodes 321-3, 323-3, and 325-3 of the first assembly wirings 321, 323, and 325 may be disposed in 320H3.
  • the auxiliary electrodes 322-2, 324-2, and 326-2 may surround the protruding electrodes 321-3, 323-3, and 325-3.
  • the protruding electrodes 321-3, 323-3, 325-3 and the auxiliary electrodes 322-2, 324-2, 326- are formed along the circumference of the protruding electrodes 321-3, 323-3, and 325-3. 2) A predetermined gap (G1, G2, G3) may be formed between them.
  • Alternating current is applied to the first assembly wirings 321, 323, 325 and the second assembly wirings 322, 324, and 326 of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (XP3), respectively.
  • a DEP force can be formed along the .
  • the first semiconductor light-emitting device 150-1, the second semiconductor light-emitting device 150-2, and the third semiconductor light-emitting device 150-3 are each connected to the first hole 340H1 of the first sub-pixel PX1. ), may be assembled in the first hole 340H2 of the second sub-pixel (PX2) and the first hole 340H3 of the third sub-pixel (PX3).
  • the first semiconductor light emitting device 150-1, the second semiconductor light emitting device 150-2, and the third semiconductor light emitting device 150-3 are connected to the first hole 340H1 and the second hole 340H1 of the first sub-pixel PX1. It may be sequentially assembled into the first hole 340H2 of the sub-pixel PX2 and the first hole 340H3 of the third sub-pixel PX3.
  • the first semiconductor light emitting device 150-1 is formed by the DEP force formed by the alternating voltage applied to the first assembly wiring 321 and the second assembly wiring 322 of the first sub-pixel PX1. It may be assembled in the first hole 340H1 of the sub-pixel PX1.
  • the second semiconductor light emitting device 150-2 is formed by the DEP force formed by the alternating voltage applied to the first assembly wiring 323 and the second assembly wiring 324 of the second sub-pixel PX2. It may be assembled in the first hole 340H2 of the sub-pixel PX2.
  • the third semiconductor light emitting device 150-3 is formed by the DEP force formed by the alternating voltage applied to the first assembly wiring 325 and the second assembly wiring 326 of the third sub-pixel PX3. It may be assembled in the first hole 340H3 of the sub-pixel PX3.
  • the first semiconductor light emitting device 150- has a shape corresponding to the shape or size of the first hole 340H1, 340H2, and 340H3 of each of the pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3. 1), a second semiconductor light emitting device 150-2 and a third semiconductor light emitting device 150-3 may be provided.
  • the first semiconductor light-emitting device 150-1, the second semiconductor light-emitting device 150-2, and the third semiconductor light-emitting device 150-3 are formed into the first sub-pixel PX1, It may be assembled simultaneously in each of the second sub-pixel (PX2) and the third sub-pixel (PX3). That is, in the first assembly wiring (321, 323, 325) and the second assembly wiring (322, 324, 326) of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3), respectively.
  • the DEP force is applied to the first hole 340H1 of the first sub-pixel (PX1), the first hole 340H2 of the second sub-pixel (PX2), and the first hole of the third sub-pixel (PX3). (340H3) can be formed simultaneously.
  • the first semiconductor light emitting device 150-3 The light emitting device 150-1 is assembled in the first hole 340H1 of the first sub-pixel PX1 having a size corresponding to the size of the first semiconductor light emitting device 150-1, and the second semiconductor light emitting device ( 150-2) is assembled in the first hole 340H2 of the second sub-pixel PX2 having a size corresponding to the size of the second semiconductor light-emitting device 150-2, and the third semiconductor light-emitting device 150-3 ) may be assembled in the first hole 340H3 of the third sub-pixel PX3 having a size corresponding to the size of the third semiconductor light emitting device 150-3.
  • Figure 18 is a plan view showing a sub-pixel according to the second embodiment.
  • FIG. 19 is a cross-sectional view taken along line D1-D2 in FIG. 18.
  • the second embodiment can reduce the parasitic capacitance capacity by reducing the vertical overlap area between the first assembly wiring 321 and the second assembly wiring 322. Accordingly, the second embodiment is similar to the first embodiment (FIGS. 9 and 10) except for the bent portion 321-4 provided in the first assembly wiring 321.
  • components having the same shape, structure, and function as those of the first embodiment are given the same reference numerals and detailed descriptions are omitted.
  • the sub-pixel (PX') according to the second embodiment includes a first assembled wiring 321, a second assembled wiring 322, a partition 340, and a semiconductor light emitting device 150. It can be included.
  • the first assembled wiring 321 may include a main electrode 321-1, an extension electrode 321-2, a bent portion 321-4, and a protruding electrode 321-3.
  • the extension electrode 321-2 may extend from the main electrode 321-1 toward the sub-pixel PX'.
  • the bent portion may extend from the extension electrode 321-2 and be disposed in the first hole 340H of the sub-pixel PX'.
  • the extension electrode 321-2 may be included in the bent portion, or the bent portion may be included in the extension electrode 321-2.
  • the bent portion may extend from the main electrode 321-1 toward the second assembly wiring 322 in the pixel area.
  • Extension electrodes 321-2 are disposed at both ends of the bent portion, and each of the extension electrodes 321-2 may be connected to the main electrode 321-1.
  • the extension electrode 321-2 is bent from two points of the main electrode 321-1 toward the sub-pixel PX', and each of the bent extension electrodes 321-2 is bent toward the sub-pixel PX'. ) may meet at the first electrode 154 to form a bent portion.
  • the width of the bent portion may be equal to or smaller than the width of the extension electrode 321-2.
  • the width W12 of the bent portion may be smaller than the width W11 of the main electrode 321-1.
  • the width W12 of the bent portion may be less than 1/3 of the width W11 of the main electrode 321-1. In this way, as the width W12 of the bent portion becomes smaller, the vertical overlap area between the auxiliary electrodes 322-2 of the second assembly wiring 322 of the bent portion may be reduced.
  • the width W12 of the bent portion may be smaller than the width of the auxiliary electrode 322-2 of the second assembled wiring 322.
  • the width of the auxiliary electrode 322-2 may mean the horizontal width or the vertical width.
  • the horizontal width may be the width along the X direction
  • the vertical width may be the width along the Y direction. Accordingly, some regions of the auxiliary electrode 322-2 of the second assembly wiring 322 vertically overlap the bent portion of the first assembled wiring 321, and other regions overlap the bent portion of the first assembled wiring 321. may not overlap vertically.
  • the width W12 of the bent portion may be smaller than the diameter D1 of the first hole 340H.
  • the width W12 of the bent portion may be smaller than the diameter D2 of the second hole 320H.
  • the width W12 of the bent portion may be larger than the diameter D3 of the protruding electrode 321-3 of the first assembled wiring 321, but may also be smaller than the diameter D3 of the protruding electrode 321-3. .
  • the protrusion may be connected to the bent portion through the first insulating layer 330.
  • the vertical overlap area between the first assembly wiring 321 and the second assembly wiring 322 is reduced, thereby reducing the capacity of the parasitic capacitance.
  • the capacity of the parasitic capacitance By reducing the capacity of the parasitic capacitance, the loss caused by the parasitic capacitance of the alternating current voltage between the first assembled wiring 321 and the second assembled wiring 322 can be reduced. Accordingly, a DEP force of sufficient size can be formed even with a smaller AC voltage, and power consumption can be reduced.
  • the display device described above may be a display panel. That is, in the embodiment, the display device and the display panel may be understood to have the same meaning.
  • a display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel to display an image.
  • Embodiments may be adopted in the field of displays that display images or information. Embodiments may be adopted in the field of displays that display images or information using semiconductor light-emitting devices.
  • the semiconductor light-emitting device may be a micro-level semiconductor light-emitting device or a nano-level semiconductor light-emitting device.
  • embodiments can be adopted in TVs, signage, smart phones, mobile phones, mobile terminals, HUDs for automobiles, backlight units for laptops, and display devices for VR or AR.

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un dispositif d'affichage comprenant : un substrat comprenant un sous-pixel ; un premier fil d'assemblage disposé dans une direction sur le substrat ; un second fil d'assemblage disposé parallèlement au premier fil d'assemblage ; une cloison de séparation disposée sur le premier fil d'assemblage et le second fil d'assemblage et comprenant un premier trou dans le sous-pixel ; et un élément électroluminescent semi-conducteur dans le premier trou. Le second fil d'assemblage peut entourer une zone partielle du premier fil d'assemblage. Le second fil d'assemblage et la zone partielle du premier fil d'assemblage sont séparés par un espace prédéterminé dans la zone marginale du premier trou.
PCT/KR2022/009149 2022-06-27 2022-06-27 Dispositif d'affichage WO2024005218A1 (fr)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/KR2022/009149 WO2024005218A1 (fr) 2022-06-27 2022-06-27 Dispositif d'affichage

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WO2024005218A1 true WO2024005218A1 (fr) 2024-01-04

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170104009A1 (en) * 2015-10-09 2017-04-13 Innolux Corporation Array substrate apparatus applying the same and assembly method thereof
US20170133550A1 (en) * 2014-10-31 2017-05-11 eLux Inc. Display with surface mount emissive elements
KR20170141305A (ko) * 2016-06-14 2017-12-26 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR20190118992A (ko) * 2019-10-01 2019-10-21 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
KR20200026681A (ko) * 2019-06-28 2020-03-11 엘지전자 주식회사 디스플레이 장치 제조를 위한 기판 및 디스플레이 장치의 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170133550A1 (en) * 2014-10-31 2017-05-11 eLux Inc. Display with surface mount emissive elements
US20170104009A1 (en) * 2015-10-09 2017-04-13 Innolux Corporation Array substrate apparatus applying the same and assembly method thereof
KR20170141305A (ko) * 2016-06-14 2017-12-26 삼성디스플레이 주식회사 픽셀 구조체, 픽셀 구조체를 포함하는 표시장치 및 그 제조 방법
KR20200026681A (ko) * 2019-06-28 2020-03-11 엘지전자 주식회사 디스플레이 장치 제조를 위한 기판 및 디스플레이 장치의 제조방법
KR20190118992A (ko) * 2019-10-01 2019-10-21 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법

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