Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/14—Structural association of two or more printed circuits
  • H05K1/144—Stacked arrangements of planar printed circuit boards
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
  • H01R11/00—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
  • H01R11/01—Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/14—Structural association of two or more printed circuits
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K3/00—Apparatus or processes for manufacturing printed circuits
  • H05K3/36—Assembling printed circuits with other printed circuits
  • H05K3/368—Assembling printed circuits with other printed circuits parallel to each other
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/072—Connecting or disconnecting of bump connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/073—Connecting or disconnecting of die-attach connectors
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/851—Dispositions of multiple connectors or interconnections
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W99/00—Subject matter not provided for in other groups of this subclass
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/01—Manufacture or treatment
  • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
  • H10W72/01251—Changing the shapes of bumps
  • H10W72/01257—Changing the shapes of bumps by reflowing
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/073—Connecting or disconnecting of die-attach connectors
  • H10W72/07331—Connecting techniques
  • H10W72/07332—Compression bonding, e.g. thermocompression bonding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/071—Connecting or disconnecting
  • H10W72/073—Connecting or disconnecting of die-attach connectors
  • H10W72/07331—Connecting techniques
  • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
  • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/321—Structures or relative sizes of die-attach connectors
  • H10W72/325—Die-attach connectors having a filler embedded in a matrix
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W72/00—Interconnections or connectors in packages
  • H10W72/30—Die-attach connectors
  • H10W72/351—Materials of die-attach connectors
  • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
  • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W74/00—Encapsulations, e.g. protective coatings
  • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
  • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
  • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
  • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
  • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
  • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

• the present invention relates to a connection structure.
• a film for example, a conductive film containing a binder resin, at least one of a curing agent and a curing accelerator, a flux, and a plurality of solder particles has been proposed (see, for example, Patent Document 1). ).
• a connected structure is manufactured by using such a conductive film and joining a first electrode and a second electrode that oppose each other in the thickness direction.
• a first connection target member including a plurality of first electrodes lined up in the plane direction and a second connection target member including a plurality of second electrodes lined up in the plane direction are prepared.
• a conductive film is arranged to cover the surface of the first connection target member on which the first electrode is provided, and further covers the surface of the second connection target member on which the second electrode is provided.
• the second connection target member is placed on the surface of the conductive film so that the second connection target member is placed on the surface of the conductive film. That is, the first electrode and the second electrode are arranged to face each other in the thickness direction.
• the conductive film is heated. As a result, the solder particles contained in the conductive film are melted to form a solder portion that electrically connects the first electrode and the second electrode. In this way, a connected structure is manufactured.
• the present invention provides a connection structure that is small in size and low in profile and has excellent reliability.
• the present invention [1] has a first base material having a plurality of first electrodes arranged in a plane direction, and a plurality of second electrodes arranged in a plane direction, the first electrode and the second electrode facing each other. a second base material disposed at intervals in a thickness direction perpendicular to the surface direction; and a second base material interposed between the first base material and the second base material and facing each other in the thickness direction. an adhesive layer that electrically connects the first electrode and the second electrode and adheres the first base material and the second base material, the thickness of the adhesive layer is less than 15 ⁇ m, and the surface In the connection structure, the distance between the adjacent first electrodes is longer than the distance between the first electrode and the second electrode facing each other in the thickness direction.
• the adhesive layer is a cured product of an anisotropic conductive adhesive film, and the anisotropic conductive adhesive film includes the first electrode and the second electrode facing each other in the thickness direction.
• the connecting structure described in [1] above includes a columnar solder portion and a cured resin that electrically connects.
• the present invention [3] includes the connection structure according to the above [1] or [2], wherein the plurality of first electrodes and the plurality of second electrodes are respectively arranged in a dot pattern. .
• the present invention [4] provides the connected structure according to the above [2], wherein the anisotropic conductive adhesive film contains solder particles, and the average maximum length of the solder particles is 3 ⁇ m or less. Contains.
• the present invention [5] provides the connected structure according to the above [2], wherein the anisotropic conductive adhesive film contains solder particles, and the average maximum length of the solder particles is 2 ⁇ m or less. Contains.
• the present invention [6] provides the connected structure according to the above [2], wherein the anisotropic conductive adhesive film contains solder particles, and the average maximum length of the solder particles is 1 ⁇ m or less. Contains.
• the present invention [7] includes the connected structure according to the above [2], wherein the anisotropic conductive adhesive film contains solder particles, and the maximum length of the solder particles is 5 ⁇ m or less. .
• the present invention [8] includes the connected structure according to the above [2], wherein the anisotropic conductive adhesive film contains solder particles, and the maximum length of the solder particles is 3 ⁇ m or less. .
• the thickness of the adhesive layer is as thin as less than 15 ⁇ m, so it is possible to reduce the height. Moreover, the distance between adjacent first electrodes in the plane direction is longer than the distance between the first electrode and the second electrode that face each other in the thickness direction. Therefore, electrical connection between two adjacent first electrodes in the plane direction can be suppressed, and the first electrode and the second electrode facing each other in the thickness direction can be reliably electrically connected. Therefore, it has excellent reliability.
• FIG. 1 shows a cross-sectional view of one embodiment of the connection structure of the present invention.
• 2A-2E illustrate one embodiment of a method for manufacturing a connection structure.
• FIG. 2A shows a first step of preparing a first substrate and a second substrate.
• FIG. 2B shows the second step of preparing an anisotropic conductive adhesive film.
• FIG. 2C shows the third step of laminating the first substrate, the anisotropic conductive adhesive film, and the second substrate.
• FIG. 2D shows a fourth step of thermocompression bonding the first substrate, the second substrate, and the anisotropic conductive adhesive film.
• FIG. 2E shows a fifth step of forming an adhesive layer for soldering the first substrate, the second substrate, and the anisotropic conductive adhesive film.
• FIG. 1 shows a cross-sectional view of one embodiment of the connection structure of the present invention.
• FIG. 2A-2E illustrate one embodiment of a method for manufacturing a connection structure.
• FIG. 2A shows
• FIG. 3 shows a plan view of the first base material.
• FIG. 4 shows a plan view of the second base material.
• 5A to 5C show schematic diagrams of columnar solder portions in the adhesive layer.
• FIG. 5A shows the distance between two adjacent first electrodes when the distance between adjacent first electrodes in the plane direction is longer than the distance between the first electrode and the second electrode facing each other in the thickness direction.
• a mode is shown in which electrical connection is suppressed and a first electrode and a second electrode facing each other in the thickness direction are electrically connected.
• FIG. 5B shows first electrodes facing each other in the thickness direction when the distance between adjacent first electrodes in the surface direction is shorter than the distance between the first electrode and the second electrode facing each other in the thickness direction.
• FIG. 5C shows first electrodes facing each other in the thickness direction when the distance between adjacent first electrodes in the surface direction is shorter than the distance between the first electrode and the second electrode facing each other in the thickness direction. And, a mode is shown in which two adjacent first electrodes are electrically connected without electrically connecting the second electrodes.
• connection structure of the present invention An embodiment of the connection structure of the present invention will be described in detail with reference to FIG.
• the vertical direction on the paper is the vertical direction (thickness direction).
• the upper side of the paper is the upper side (one side in the thickness direction)
• the lower side of the paper is the lower side (the other side in the thickness direction).
• the left-right direction and the depth direction of the paper surface are plane directions perpendicular to the up-down direction. Specifically, it conforms to the direction arrows in each figure.
• the connected structure 1 includes a first base material 2, a second base material 4 arranged at intervals in the thickness direction, and a space between the first base material 2 and the second base material 4. and an adhesive layer 3 interposed therebetween.
• the connected structure 1 includes the first base material 2, the adhesive layer 3, and the second base material 4 in this order toward one side in the thickness direction.
• the connected structure 1 includes a first base material 2, an adhesive layer 3 disposed directly on the upper surface (one surface in the thickness direction) of the first base material 2, and an adhesive layer 3 disposed directly on the upper surface (one surface in the thickness direction) of the adhesive layer 3 a second base material 4 directly disposed on one side).
• the connected structure 1 is manufactured using an anisotropic conductive adhesive film. That is, the adhesive layer 3 in the connected structure 1 obtained by this method is a cured product of an anisotropic conductive adhesive film.
• the method for manufacturing a connected structure includes a first step of preparing a first substrate 2 and a second substrate 4, a second step of preparing an anisotropic conductive adhesive film 5, and a step of preparing a first substrate 2 and an anisotropic conductive adhesive film 5. a third step of laminating the conductive adhesive film 5 and the second substrate 4; a fourth step of thermocompression bonding the first substrate 2 and the second substrate 4 and the anisotropic conductive adhesive film 5; A fifth step of forming an adhesive layer 3 for soldering the second substrate 4 and the anisotropic conductive adhesive film 5 is provided.
• the first base material 2 has a flat plate shape.
• the first base material 2 includes a first printed circuit board 11 and a plurality of first electrodes 12 arranged in a plane direction of the first printed circuit board 11.
• the first base material 2 includes the first printed circuit board 11 and a plurality of first electrodes 12 provided on the surface (one surface in the thickness direction) of the first printed circuit board 11.
• the first printed circuit board 11 is made of an insulating material.
• the thickness of the first printed circuit board 11 is, for example, 5 ⁇ m or more and, for example, 1000 ⁇ m or less.
• the first electrode 12 is made of metal.
• the first electrode 12 is arranged in a dot pattern on the first base material 2, as shown in the plan view of the first base material 2 shown in FIG.
• the first electrode 12 has a circular shape in plan view.
• the plurality of first electrodes 12 are arranged evenly in the plane direction.
• first electrodes 12 are arranged in a dot pattern, electrical connection between two adjacent first electrodes 12 in the plane direction is suppressed, and the first electrode 12 and the second electrode facing each other in the thickness direction 14 can be reliably electrically connected. As a result, reliability can be improved.
• the thickness of the first electrode 12 is, for example, 0 ⁇ m or more, preferably 0.001 ⁇ m or more, and, for example, 5 ⁇ m or less.
• the thickness of the 1st electrode 12 is 0 micrometer.
• the distance (pitch) between adjacent first electrodes 12 is, for example, 3 ⁇ m or more, preferably 5 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 100 ⁇ m or less.
• the distance (pitch) is the same as the distance A (described later) between adjacent first electrodes 12 in the plane direction.
• the distance (pitch) between adjacent first electrodes 12 in the planar direction is the distance between the first electrodes facing each other in the thickness direction. 12 and the second electrode 14.
• the second base material 4 has a flat plate shape.
• the second base material 4 includes a second printed circuit board 13 and a plurality of second electrodes 14 arranged in the surface direction of the second printed circuit board 13.
• the second base material 4 includes the second wired circuit board 13 and a plurality of second electrodes 14 provided on the surface (the other surface in the thickness direction) of the second wired circuit board 13.
• the second printed circuit board 13 is made of, for example, an insulating material or a semiconductor material.
• the thickness of the second printed circuit board 13 is, for example, 5 ⁇ m or more and, for example, 1000 ⁇ m or less.
• the second electrode 14 is made of metal.
• the second electrode 14 is arranged in a dot pattern on the second base material 4, as shown in the plan view of the second base material 4 shown in FIG.
• the second electrode 14 has a circular shape in plan view.
• the plurality of second electrodes 14 are arranged evenly in the plane direction.
• the second electrode 14 is arranged in a dot pattern, electrical connection between two adjacent first electrodes 12 in the plane direction is suppressed, and the first electrode 12 and the second electrode facing each other in the thickness direction 14 can be reliably electrically connected. As a result, reliability can be improved.
• the thickness of the second electrode 14 is, for example, 0 ⁇ m or more, preferably 0.001 ⁇ m or more, and, for example, 5 ⁇ m or less. In addition, when the surface of the 2nd base material 4 and the surface of the 2nd electrode 14 correspond, the thickness of the 2nd electrode 14 is 0 micrometer.
• the distance (pitch) between adjacent second electrodes 14 in the planar direction is the same as the distance (pitch) between adjacent first electrodes 12 in the above-mentioned planar direction.
• an anisotropic conductive adhesive film composition is prepared.
• the anisotropic conductive adhesive film composition includes solder particles 6 and a curable resin.
• the solder material forming the solder particles 6 may be a solder material that does not contain lead (lead-free solder material).
• solder materials include tin and tin alloys.
• tin alloys include tin-bismuth alloy (Sn-Bi), tin-silver-copper alloy (Sn-Ag-Cu), and tin-silver alloy (Sn-Ag).
• Preferred solder materials include tin-silver-copper alloy (Sn-Ag-Cu) and tin-silver alloy (Sn-Ag).
• the content of tin in the tin-bismuth alloy is, for example, 10% by mass or more, preferably 25% by mass or more, and, for example, 50% by mass or less, preferably 45% by mass.
• the content of bismuth in the tin-bismuth alloy is, for example, 50% by mass or more, preferably 55% by mass or more, and, for example, 90% by mass or less, preferably 75% by mass or less.
• the content of tin in the tin-silver-copper alloy is, for example, 90% by mass or more, preferably 95% by mass or more.
• the content of silver in the tin-silver-copper alloy is, for example, 10% by mass or less, preferably 5% by mass or less.
• the content of copper in the tin-silver-copper alloy is, for example, 1% by mass or less, preferably 0.5% by mass or less.
• the content of tin in the tin-silver alloy is, for example, 90% by mass or more, preferably 95% by mass or more. Further, the content of silver in the tin-silver alloy is, for example, 10% by mass or less, preferably 5% by mass or less.
• the melting point of the solder material (that is, the melting point of the solder particles 6) is, for example, 260°C or lower, preferably 235°C or lower, and, for example, 100°C or higher, preferably 130°C or higher.
• the melting point is determined by differential scanning calorimetry (DSC) (the same applies hereinafter).
• the shape of the solder particles 6 is not particularly limited, and includes, for example, a spherical shape, a plate shape, and a needle shape.
• the shape of the solder particles 6 is preferably spherical.
• the shape of the solder particle 6 is shown as spherical in FIG. 2B, the shape of the solder particle 6 is not limited to this.
• the average value of the maximum length of the solder particles 6 (in the case of a spherical shape, the average particle diameter D 50 ) is, for example, less than 15 ⁇ m, preferably 10 ⁇ m or less, more preferably 5 ⁇ m or less, and even more preferably a small and small size. From the viewpoint of heightening, the thickness is 3 ⁇ m or less, particularly preferably 2 ⁇ m or less, and most preferably 1 ⁇ m or less.
• the average value of the maximum length is measured using a laser diffraction scattering particle size distribution analyzer. Moreover, the average value of the maximum length can be adjusted by classification.
• the maximum length of the solder particles 6 (in the case of a spherical shape, the maximum particle diameter D max ) is, for example, 20 ⁇ m or less, preferably 10 ⁇ m or less, and more preferably 5 ⁇ m or less from the viewpoint of reducing size and height. , more preferably 3 ⁇ m or less.
• the maximum length is measured using a laser diffraction scattering particle size analyzer.
• the average value of the maximum length can be adjusted by classification.
• the surface of the solder particles 6 is generally covered with an oxide film made of an oxide of the solder material.
• the thickness of the oxide film is, for example, 1 nm or more and, for example, 20 nm or less.
• the content ratio of the solder particles 6 is, for example, 10 volume % or more, preferably 15 volume % or more, and, for example, 50 volume % or less, preferably 40 volume %, based on the anisotropic conductive adhesive film composition. % or less.
• the solder particles 6 can be used alone or in combination of two or more types.
• thermosetting resins examples include thermosetting resins.
• thermosetting resin examples include epoxy resin (e.g., bisphenol A epoxy resin), urea resin, melamine resin, diallyl phthalate resin, silicone resin, phenol resin, thermosetting acrylic resin, thermosetting polyester, and thermosetting resin.
• thermosetting polyimide, and thermosetting polyurethane Preferable examples of the curable resin include epoxy resins.
• the curable resin is liquid at 25°C or solid at 25°C.
• the softening point of the curable resin is, for example, 50°C or higher, preferably 80°C or higher, and, for example, 230°C or lower, preferably 200°C or lower.
• the softening point can be measured with a thermomechanical analyzer.
• the content of the curable resin is, for example, 10% by volume or more, preferably 20% by volume or more, and, for example, 90% by volume or less, preferably 85% by volume, based on the anisotropic conductive adhesive film composition. % or less.
• the curable resin can be used alone or in combination of two or more.
• the anisotropic conductive adhesive film composition can also contain a thermoplastic resin, if necessary.
• thermoplastic resin is blended in order to reliably mold the anisotropic conductive adhesive film composition into a sheet shape.
• thermoplastic resins include phenoxy resins, polyolefins (e.g., polyethylene, polypropylene, ethylene-propylene copolymers, etc.), acrylic resins, polyesters, polyvinyl acetate, ethylene-vinyl acetate copolymers, polyvinyl chloride, and polystyrene.
• thermoplastic polyimide thermoplastic polyurethane
• polyamino Bismaleimide polyamideimide
• polyetherimide bismaleimide triazine resin
• polymethylpentene fluorinated resin
• liquid crystal polymer olefin-vinyl alcohol copolymer, ionomer, polyarylate, acrylonitrile-ethylene-styrene copolymer, acrylonitrile- Examples include butadiene-styrene copolymer, acrylonitrile-styrene copolymer, and butadiene-styrene copolymer.
• Preferable thermoplastic resins include acrylic resins and phenoxy resin
• the content ratio of the thermoplastic resin is, for example, 5% by volume or more, preferably 10% by volume or more, and, for example, 80% by volume or less, preferably 70% by volume, based on the anisotropic conductive adhesive film composition. % or less.
• thermoplastic resins can be used alone or in combination of two or more.
• anisotropic conductive adhesive film composition contains flux, if necessary.
• the flux is a component for removing an oxide film (an oxide film made of an oxide of the solder material) on the surface of the solder particles 6.
• Examples of flux materials include organic acid salts.
• Examples of organic acid salts include organic acids, quinolinol derivatives, and metal carbonylate salts.
• Examples of organic acids include aliphatic carboxylic acids and aromatic carboxylic acids.
• Examples of aliphatic carboxylic acids include aliphatic dicarboxylic acids. Specific examples of aliphatic dicarboxylic acids include adipic acid, malic acid, malonic acid, succinic acid, glutaric acid, pimelic acid, suberic acid, and sebacic acid.
• Examples of aromatic carboxylic acids include benzoic acid, 2-phenoxybenzoic acid, phthalic acid, diphenylacetic acid, trimellitic acid, and pyromellitic acid.
• Preferred materials for the flux include organic acids. A more preferred material for the flux is malic acid.
• the melting point of the flux is, for example, 250°C or lower, preferably 180°C or lower, more preferably 160°C or lower, and also, for example, 100°C or higher, preferably 120°C or higher, more preferably 130°C or higher. .
• the shape of the flux is not particularly limited, and includes, for example, a plate shape, a needle shape, and a spherical shape. Further, the flux may be dissolved in a known solvent.
• the content of the flux is, for example, 0.1% by volume or more, preferably 1% by volume or more, and, for example, 50% by volume or less, preferably 20% by volume, based on the anisotropic conductive adhesive film composition. % or less.
• the flux can be used alone or in combination of two or more types.
• anisotropic conductive adhesive film composition may contain additives (for example, a curing agent, a curing accelerator, and a silane coupling agent), if necessary.
• additives for example, a curing agent, a curing accelerator, and a silane coupling agent
• anisotropic conductive adhesive film composition solder particles 6, a curable resin, a thermoplastic resin blended as necessary, a flux blended as necessary, and a curable resin blended as necessary. Mix with additives. In this way, an anisotropic conductive adhesive film composition is prepared.
• the anisotropic conductive adhesive film composition can be prepared as a varnish by blending the anisotropic conductive adhesive film composition with a known solvent.
• an anisotropic conductive adhesive film composition (varnish of an anisotropic conductive adhesive film composition) is applied to one side in the thickness direction of the release liner 7. Then, if necessary, dry.
• the release liner 7 is a film for covering and protecting the anisotropic conductive adhesive film 5.
• the release liner 7 has a film shape.
• the release liner 7 is, for example, a plastic base material (plastic film).
• plastic base material include polyester sheets (polyethylene terephthalate (PET) sheets), polyolefin sheets (e.g., polyethylene sheets, polypropylene sheets), polyvinyl chloride sheets, polyimide sheets, and polyamide sheets (nylon sheets).
• PET polyethylene terephthalate
• polyolefin sheets e.g., polyethylene sheets, polypropylene sheets
• polyvinyl chloride sheets e.g., polyethylene sheets, polypropylene sheets
• polyvinyl chloride sheets e.g., polyvinyl chloride sheets
• polyimide sheets polyimide sheets
• polyamide sheets nylon sheets
• the thickness of the release liner 7 is, for example, 1 ⁇ m or more and, for example, 100 ⁇ m or less.
• the drying temperature is, for example, 40°C or higher and, for example, 100°C or lower.
• the drying time is, for example, 1 minute or more and, for example, 60 minutes or less.
• the anisotropic conductive adhesive film 5 is prepared on one side of the release liner 7 in the thickness direction.
• Such an anisotropic conductive adhesive film 5 has a film shape (including sheet shape) with a predetermined thickness.
• anisotropic conductive adhesive film 5 is formed from an anisotropic conductive adhesive film composition containing solder particles 6 and a curable resin. Therefore, anisotropic conductive adhesive film 5 includes solder particles 6 and curable resin. Specifically, the anisotropic conductive adhesive film 5 includes a curable resin and solder particles 6 dispersed in the curable resin.
• the thickness of the anisotropic conductive adhesive film 5 is, for example, less than 15 ⁇ m, preferably less than 10 ⁇ m, more preferably less than 10 ⁇ m, even more preferably less than 5 ⁇ m, and, for example, more than 1 ⁇ m. It is.
• the anisotropic conductive adhesive film 5 is prepared.
• the first substrate 2 and the second substrate 4 are brought close to the anisotropic conductive adhesive film 5, and the first substrate 2 and the second substrate 4 are brought into contact with the anisotropic conductive adhesive film 5. . More specifically, one surface of the first substrate 2 in the thickness direction and the other surface of the anisotropic conductive adhesive film 5 in the thickness direction so that the first electrode 12 and the second electrode 14 face each other in the thickness direction. At the same time, one surface of the second substrate 4 in the thickness direction is brought into contact with one surface of the anisotropic conductive adhesive film 5 in the thickness direction.
• first substrate 2 the anisotropic conductive adhesive film 5, and the second substrate 4 are laminated to produce a laminate 8.
• the first substrate 2 and the second substrate 4 are pressed (thermocompression bonded) toward the anisotropic conductive adhesive film 5.
• the temperature of thermocompression bonding is below the melting point of the solder particles 6.
• the temperature of thermocompression bonding is, for example, less than 100°C, preferably 80°C or less, and also, for example, 40°C or more, preferably 60°C or more.
• the pressure of thermocompression bonding is, for example, 0.001 MPa or more, preferably 0.005 MPa or more, more preferably 0.01 MPa or more, and also, for example, 10 MPa or less, preferably 5 MPa or less, more preferably 1 MPa. It is as follows.
• the first electrode 12 of the first substrate 2 is embedded in the anisotropic conductive adhesive film 5, and one surface of the first substrate 2 in the thickness direction is covered with the anisotropic conductive adhesive film 5.
• the second electrode 14 of the second substrate 4 is embedded in the anisotropic conductive adhesive film 5, and the other surface of the second substrate 4 in the thickness direction is covered with the anisotropic conductive adhesive film 5.
• an adhesive layer 3 is formed to solder bond the first substrate 2 and second substrate 4 to the anisotropic conductive adhesive film 5.
• the laminate 8 is heated.
• the heating temperature is a temperature equal to or higher than the melting point of the solder particles 6.
• the heating temperature is, for example, 100°C or higher, preferably 130°C or higher, more preferably 200°C or higher, and, for example, 400°C or lower, preferably 350°C or lower, more preferably 300°C or lower. It is.
• Such heating causes the solder particles 6 to melt.
• the melted solder particles 6 gather (self-agglomeration) between the first electrode 12 and the second electrode 14 facing each other in the thickness direction, and form columnar solder portions 15 .
• the curable resin in the anisotropic conductive adhesive film 5 is driven out by the self-agglomerating solder particles 6 and moves to the periphery of the columnar solder portions 15. Thereafter, the curable resin is thermally cured to become a cured resin 16 that adheres the first base material 2 and the second base material 4.
• cured resin 16 includes a portion of melted solder particles 6 and/or unmelted solder particles 6.
• the adhesive layer 3 including the columnar solder portions 15 and the cured resin 16 is formed.
• the thickness of the adhesive layer 3 is less than 15 ⁇ m, preferably 10 ⁇ m or less, more preferably less than 10 ⁇ m, even more preferably 5 ⁇ m or less, and, for example, 1 ⁇ m or more.
• the connected structure 1 is manufactured.
• the connected structure 1 includes a first base material 2 and a second base material 4 arranged at intervals in the thickness direction so that the first electrode 12 and the second electrode 14 face each other. and an adhesive layer 3 interposed between the first base material 2 and the second base material 4.
• the adhesive layer 3 includes a columnar solder portion 15 and a cured resin 16.
• the adhesive layer 3 adheres the first base material 2 and the second base material 4. Specifically, the adhesive layer 3 adheres to the surface of the first base material 2 except for the first electrode 12 . Further, the adhesive layer 3 adheres to the surface of the second base material 4 except for the second electrode 14.
• the columnar solder portion 15 electrically connects the first electrode 12 and the second electrode 14 that face each other in the thickness direction. Further, the columnar solder portion 15 has a columnar shape (specifically, a cylindrical shape), and is arranged between the first electrode 12 and the second electrode 14 and is in contact with them.
• the thickness (height) of the columnar solder portion 15 is, for example, 1 ⁇ m or more, preferably 3 ⁇ m or more, and, for example, 10 ⁇ m or less, preferably 5 ⁇ m or less.
• the thickness of the columnar solder portion 15 is the same as the distance B (described later) between the first electrode 12 and the second electrode 14 that face each other in the thickness direction.
• the thickness of the adhesive layer 3 is the same as the total thickness of the first electrode 12 , the second electrode 14 , and the columnar solder portion 15 .
• the distance A between adjacent first electrodes 12 in the plane direction (hereinafter sometimes referred to as distance A) is the distance between the first electrode 12 and the second electrode facing each other in the thickness direction. 14 (hereinafter sometimes referred to as distance B).
• distance A and distance B satisfy the following formula (1).
• the distance A is the same as the distance (pitch) between adjacent first electrodes 12 in the above-described plane direction. Specifically, it is 3 ⁇ m or more, preferably 5 ⁇ m or more, and, for example, 500 ⁇ m or less, preferably 100 ⁇ m or less.
• the distance B is the same as the thickness of the columnar solder portion 15 described above. Specifically, it is 1 ⁇ m or more, preferably 3 ⁇ m or more, and for example, 10 ⁇ m or less, preferably 5 ⁇ m or less.
• distance A ⁇ distance B The difference between distance A and distance B (distance A ⁇ distance B) is, for example, 1 ⁇ m or more, preferably 5 ⁇ m or more, and, for example, 499 ⁇ m or less, preferably 100 ⁇ m or less.
• the ratio of distance B to distance A is, for example, 0.01 or more, preferably 0.1 or more, and also, for example, less than 1, preferably 0.8 or less.
• the thickness of the connected structure 1 is, for example, 50 ⁇ m or more and, for example, 1000 ⁇ m or less.
• the adhesive layer 3 has a thickness of less than 15 ⁇ m. Therefore, the height can be reduced. Further, in the connected structure 1, the distance A is longer than the distance B. That is, in the connected structure 1, the distance A and the distance B satisfy the above formula (1). Thereby, as shown in FIG. 5A, electrical connection between two adjacent first electrodes 12 is suppressed, and the first electrode 12 and second electrode 14 facing each other in the thickness direction are reliably electrically connected. can. As a result, reliability can be improved.
• the first electrode 12 and the second electrode 14 that face each other in the thickness direction are electrically connected, and the columnar solder parts 15 that are adjacent in the surface direction are electrically connected (that is, the two adjacent two first electrodes 12 are electrically connected).
• FIG. 5C two adjacent first electrodes 12 are electrically connected without electrically connecting the first electrode 12 and the second electrode 14 that face each other in the thickness direction. In either case, since two adjacent first electrodes 12 are electrically connected, the two first electrodes 12 are short-circuited, resulting in reduced reliability.
• distance A tends to be shorter than distance B.
• the distance A can be made longer than the distance B, and as a result, reliability can be improved.
• the adhesive layer 3 is a cured product of an anisotropic conductive adhesive film.
• the adhesive layer 3 is not particularly limited as long as it is a layer that electrically connects the first electrode 12 and the second electrode 14 and also bonds the first base material 2 and the second base material 4.
• the adhesive layer 3 is not particularly limited as long as it is a layer that electrically connects the first electrode 12 and the second electrode 14 and also bonds the first base material 2 and the second base material 4.
• a cured product of an anisotropic conductive adhesive paste for example, or a cured product of an anisotropic conductive adhesive paste.
• the anisotropic conductive adhesive paste includes, for example, the solder particles 6, the curable resin, and an activator (for example, carboxylic acid).
• the columnar solder portions 15 that electrically connect the first electrode 12 and the second electrode 14 are formed, and the curable The resin is cured and becomes a cured resin 16, thereby bonding the first base material 2 and the second base material 4.
• the first electrode 12 and the second electrode 14 are arranged as a dot pattern, but the arrangement of the first electrode 12 and the second electrode 14 is not limited to this.
• the first electrode 12 and the second electrode 14 have a circular shape in a plan view, but the shapes of the first electrode 12 and the second electrode 14 are not limited to this, and for example, the shapes are square in a plan view. It may be in the form of
• the second base material 4 has a flat plate shape, but the shape of the second base material 4 is not limited to this, and may be, for example, a shape of a chip component (for example, a mini/micro LED). There may be.
• the first substrate 2 and the second substrate 4 are brought close to the anisotropically conductive adhesive film 5, and the first substrate 2 and the second substrate 4 are anisotropically conductive.
• the anisotropic conductive adhesive film 5 is placed on one surface in the thickness direction of the first substrate 2 (the surface on which the first electrode 12 is provided), and then the anisotropic conductive adhesive film 5 is brought into contact with the anisotropic conductive adhesive film 5.
• the second substrate 4 can also be arranged on one surface of the conductive adhesive film 5 in the thickness direction so that the first electrode 12 and the second electrode 14 face each other.
• one surface of the anisotropic conductive adhesive film 5 in the thickness direction can be subjected to surface treatment (for example, surface treatment by applying silica filler).
• thermocompression bonding is performed at the pressure in the fourth step and the temperature in the fifth step.
• the first substrate 2 and the second substrate 4 are bonded by thermocompression to the anisotropic conductive adhesive film 5, but especially when the second base material 4 is a chip component.
• the connection structure 1 can also be manufactured by reflow or vacuum reflow without performing thermocompression bonding.
• solder particle A (96.5 mass% Sn-3.5 mass% Ag alloy, melting point 221 ° C., spherical shape, particle diameter D50 : 3 ⁇ m, maximum particle diameter Dmax: 12 ⁇ m, oxygen concentration: 1100 ppm )
• Solder particles B Solder particles (96.5% Sn-3.0% Ag-0.5% Cu alloy, melting point 217-219°C, spherical shape, particle diameter D 50 : 3 ⁇ m, oxygen concentration 1100 ppm) Solder particles obtained by classification, particle size D50 : 2 ⁇ m, maximum particle size D max : 4.6 ⁇ m
• Solder particles C Solder particles (96.5 mass% Sn-3.0 mass% Ag-0.5 mass% Cu alloy, melting point 217-219°C, spherical shape, particle diameter D 50 : 3 ⁇ m, oxygen concentration 1100 ppm) Solder particles obtained by classification, particle size D50 : 1 ⁇ m, maximum particle size D max : 2.9 ⁇ m
• Example 1 A first substrate was prepared.
• the first substrate has a cylindrical first electrode having a diameter of 15 ⁇ m and a thickness of 1 ⁇ m, and the distance A between adjacent first electrodes is 15 ⁇ m.
• a second substrate was separately prepared.
• the second substrate has a cylindrical second electrode with a diameter of 15 ⁇ m and a thickness of 1 ⁇ m, and the distance between adjacent second electrodes is 15 ⁇ m.
• An anisotropic conductive adhesive film was prepared. Specifically, first, 50 parts by mass of jER828 as a thermosetting resin, 50 parts by mass of ARUFON UH-2170 as a thermoplastic resin, 150 parts by mass of solder particles A, and 20 parts by mass of malic acid as a fluxing agent. were added to methyl ethyl ketone (MEK) and mixed. In this way, an anisotropic conductive adhesive film composition (solid content concentration 50% by mass) was prepared.
• MEK methyl ethyl ketone
• anisotropic conductive adhesive film composition was applied onto the release liner to form a coating film, and then dried at 80°C for 5 minutes. In this way, an anisotropic conductive adhesive film was prepared.
• a first substrate, an anisotropic conductive adhesive film, and a second substrate were laminated. Specifically, an anisotropic conductive adhesive film was transferred onto one surface of the first substrate in the thickness direction (the surface on which the first electrode was provided). Next, a silica filler (trade name "Hypresica", manufactured by Ube Eximo Co., Ltd.) having a diameter ⁇ S of 5 ⁇ m was applied to one side in the thickness direction of the anisotropic conductive adhesive film. After removing excess silica filler with an air blower, the second substrate was placed so that the first electrode and the second electrode faced each other. In this way, a laminate including the first substrate, the anisotropic conductive adhesive film, and the second substrate in this order in the thickness direction was manufactured.
• a silica filler trade name "Hypresica", manufactured by Ube Eximo Co., Ltd.
• Example 2 to 7 and Comparative Examples 1 to 4 A connected structure was manufactured based on the same procedure as in Example 1. However, according to Table 1, the formulation of the anisotropic conductive adhesive and the thickness of the anisotropic conductive adhesive film were changed. In Example 3, in the third step, a silica filler having a diameter ⁇ S of 10 ⁇ m was applied to one side of the anisotropic conductive adhesive film in the thickness direction. Furthermore, in Comparative Example 2, a silica filler having a diameter ⁇ S of 15 ⁇ m was applied.
• the bonded structure of the present invention is suitably used in the manufacture of semiconductor devices.

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• 2023
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