WO2023185546A1 - 电镀设备 - Google Patents

电镀设备 Download PDF

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Publication number
WO2023185546A1
WO2023185546A1 PCT/CN2023/082706 CN2023082706W WO2023185546A1 WO 2023185546 A1 WO2023185546 A1 WO 2023185546A1 CN 2023082706 W CN2023082706 W CN 2023082706W WO 2023185546 A1 WO2023185546 A1 WO 2023185546A1
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WO
WIPO (PCT)
Prior art keywords
hole
stabilizing sleeve
flow stabilizing
holes
equipment according
Prior art date
Application number
PCT/CN2023/082706
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English (en)
French (fr)
Inventor
李佳奇
李彪
盛俊威
杨宏超
贾照伟
王坚
王晖
Original Assignee
盛美半导体设备(上海)股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 盛美半导体设备(上海)股份有限公司 filed Critical 盛美半导体设备(上海)股份有限公司
Publication of WO2023185546A1 publication Critical patent/WO2023185546A1/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/02—Tanks; Installations therefor
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C25D21/14—Controlled addition of electrolyte components
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/08—Electroplating with moving electrolyte e.g. jet electroplating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/20—Recycling

Definitions

  • the invention belongs to the technical field of semiconductor manufacturing, and particularly relates to electroplating equipment.
  • the flip-chip packaging process is the mainstream process in the market, and 2.5D and 3D packaging are gradually mature and mass-produced.
  • it is particularly important to improve the uniformity and reduce coplanarity of Solder products. If it can be effectively Improvement can greatly improve product reliability and thereby enhance product competitiveness.
  • Wafer-level packaging electroplating currently uses two plating forms: horizontal plating and vertical rack plating.
  • the equipment used corresponding to the two electroplating methods is horizontal jet electroplating equipment and vertical rack plating equipment.
  • the horizontal jet electroplating equipment is an improved electroplating equipment after the vertical rack plating equipment.
  • the horizontal jet electroplating equipment has the advantages of easy operation and plating efficiency.
  • the characteristics of good tank scalability and high degree of automation, low risk of cross-contamination of the plating solution, easy management of the plating solution, saving water consumption and costs, excellent operating environment, good product uniformity, and high reliability have become the replacement for the traditional vertical rack plating.
  • Equipment has become the first choice for semiconductor manufacturers when purchasing equipment.
  • the coating on the plated substrate will have poor uniformity and high coplanarity. If the plating rate is simply increased by increasing the flow rate of the plating solution without any structural improvement, the unevenness of the coating will be more serious.
  • the plating rate is mainly related to the flow rate of the plating solution on the entire substrate. In order to achieve high plating rates, a large and stable flow of plating liquid must be supplied to the substrate. However, once the plating liquid flow rate increases, it is difficult to control the electric field across the entire substrate and the uniformity of the plating liquid flow.
  • the flow field diffusion mode of the electroplating equipment is a fountain flow field
  • the fountain flow field is strong in the center and relatively weak at the edges. How to control the stability of the flow field has become a crucial point in how to improve the differentiation between the center and edge of the plated substrate.
  • this application proposes an electroplating Equipment, the cathode plating liquid enters between the flow stabilizing sleeve and the through hole side wall in the center of the membrane frame through the transport branch pipe, the cathode plating liquid enters the interior of the flow stabilizing sleeve through the second hole opened on the side wall of the flow stabilizing sleeve, and then The first hole of the center cap is supplied to the diffusion plate to solve the problem of unstable flow field when the flow field diffusion mode of the electroplating equipment is a fountain flow field, thereby solving the problem of the center and edge of the packaged substrate product. the issue of differentiation.
  • An electroplating equipment proposed by the invention includes:
  • the delivery branch pipe extends from the side wall of the membrane frame through hole to the edge of the membrane frame;
  • Electroplating solution buffer structure including center cap and flow stabilizing sleeve
  • the center cap is fixed above the through hole of the membrane frame and covers the through hole of the membrane frame.
  • the top of the center cap is provided with a plurality of first holes;
  • the flow stabilizing sleeve is fixed under the center cap, at least one second hole is opened on the side wall of the flow stabilizing sleeve, and the flow stabilizing sleeve is inserted into the through hole of the membrane frame;
  • the diffusion plate is fixed on the top of the membrane frame, and has multiple third holes;
  • the cathode plating liquid enters between the flow stabilizing sleeve and the side wall of the membrane frame through hole through the transport branch pipe, and the cathode plating liquid enters the inside of the flow stabilizing sleeve through the second hole opened on the side wall of the flow stabilizing sleeve, and then passes through the center
  • the first hole of the cap feeds to the diffuser plate and reaches the substrate through the third hole in the diffuser plate.
  • the first hole on the center cap and the third hole on the diffusion plate are arranged in the same manner.
  • the first hole on the center cap and the third hole on the diffusion plate are arranged in different ways.
  • the first hole on each central cap completely overlaps with the corresponding third hole on the diffusion plate.
  • the first hole on each central cap partially overlaps with the corresponding third hole on the diffusion plate.
  • the first hole on each of the central caps does not overlap with the corresponding third hole on the diffusion plate.
  • the first hole on the center cap and the third hole on the diffusion plate are arranged in a honeycomb shape.
  • the second holes on the flow stabilizing sleeve are evenly arranged on the side wall of the flow stabilizing sleeve.
  • connection point between the transport branch pipe and the through hole is installed corresponding to the second hole on the flow stabilizing sleeve.
  • connection point between the delivery branch pipe and the through hole and the second hole on the flow stabilizing sleeve are installed in a staggered manner.
  • the centers of the second holes on the flow stabilizing sleeve are all located on the same horizontal line.
  • the centers of the second holes on the flow stabilizing sleeve are located on different horizontal lines.
  • the first holes on the central cap are arranged with equal diameters.
  • the first hole on the central cap is provided with a variable diameter.
  • the cathode plating liquid enters the space formed between the flow stabilizing sleeve and the side wall of the through hole in the center of the membrane frame through the transport branch pipe, that is, the first accommodation space.
  • the cathode plating liquid passes through the side wall of the flow stabilizing sleeve.
  • the second hole opened enters the second accommodation space of the internal space of the flow stabilizing sleeve, and is then supplied to the diffusion plate through the first hole of the center cap, effectively preventing the cathode plating liquid from directly rushing upward from the central through hole of the membrane frame.
  • Figure 1 shows a schematic partial structural diagram of the electroplating equipment according to the embodiment of the present invention
  • Figure 2 shows a schematic top view of the membrane frame according to the embodiment of the present invention
  • FIG. 3 shows a schematic structural diagram of the membrane frame from below according to the embodiment of the present invention
  • Figure 4 shows a schematic three-dimensional view of the electroplating solution buffer structure according to the embodiment of the present invention
  • Figure 5 shows a schematic top view of the electroplating solution buffer structure according to the embodiment of the present invention.
  • Figure 6 shows a schematic structural diagram of the electroplating solution buffer structure from below according to the embodiment of the present invention.
  • Figure 7 shows a schematic diagram of the partial structure of the electroplating solution buffer structure and membrane frame assembled in the embodiment of the present invention
  • Figure 8 shows a schematic top view of the structure of the diffusion plate according to the embodiment of the present invention.
  • Figure 9 shows a schematic bottom structural diagram of the diffusion plate according to the embodiment of the present invention.
  • Figure 10 shows a schematic diagram of fluid transmission according to an embodiment of the present invention.
  • Figure 1 shows a partial structural schematic diagram of the electroplating equipment according to the embodiment of the present invention
  • Figure 3 shows a schematic structural diagram of the film frame viewed from above according to the embodiment of the present invention.
  • the electroplating equipment includes: a film frame 100, a transport branch pipe 200, a plating solution buffer structure 300, and a diffusion plate 400.
  • a through hole 101 is opened in the center of the film frame 100, and a plating solution buffer structure 300 is provided in the through hole 101.
  • a transport branch pipe 200 is provided on the film frame 100.
  • the transport branch pipe 200 extends from the center to the edge of the film frame 100, and is fixedly installed above the film frame 100. Diffusion plate 400.
  • FIG. 2 shows a schematic structural diagram of a membrane frame according to an embodiment of the present invention.
  • the membrane frame 100 is a substantially dish-shaped rigid perforated structure or a mesh frame structure.
  • the membrane 500 will be fixedly arranged below the membrane frame 100 .
  • the membrane 500 is used Cationic membrane for copper, nickel and tin electroplating.
  • the membrane may be a proton exchange membrane or a conventional membrane covered with a fabric structure suitable for alloy plating.
  • the film frame 100 is also provided with a plurality of transport branch pipes 200 extending from the side wall of the through hole 101 in the center of the film frame 100 to the edge of the film frame 100 .
  • the delivery branch pipes 200 are distributed on the structure of the film frame 100. When the number of the delivery branch pipes 200 is greater than or equal to 2, the delivery branch pipes 200 are evenly distributed on the film frame 100.
  • the evenly distributed transport branch pipes 200 can ensure that the cathode plating liquid enters the through hole 101 evenly from different directions and maintains the stability of the overall flow rate.
  • One end of the delivery branch pipe 200 is connected to the through hole 101 located in the center of the film frame 100, serving as the outlet for the cathode plating solution; the other end of the delivery branch pipe 200 is fixedly connected to the side wall of the film frame 100, and the bottom wall of the delivery branch pipe 200 is provided with an electroplating
  • the liquid inlet 201 serves as a liquid inlet for the cathode plating liquid.
  • the electroplating liquid inlet 201 is connected to a liquid inlet pipe (not shown) of the cathode plating liquid provided at the bottom of the membrane frame 100 .
  • the number of delivery branch pipes 200 is six, and the six delivery branch pipes 200 are radially arranged on the structure of the film frame 100 .
  • a plating solution buffer structure 300 is provided in the center of the film frame 100 .
  • Figure 4 shows a schematic three-dimensional view of the plating solution buffer structure according to the embodiment of the present invention
  • Figure 5 shows a schematic top view of the plating solution buffer structure according to the embodiment of the present invention
  • Figure 6 shows a schematic diagram of the top view of the plating solution buffer structure according to the present invention.
  • the electroplating solution buffer structure 300 includes: a central cap 301 and a flow stabilizing sleeve 302 .
  • the central cap 301 is fixed above the through hole 101 of the membrane frame 100 and covers the through hole 101 of the membrane frame 100.
  • a plurality of first holes 3011 are provided on the top of the central cap 301.
  • the plurality of first holes 3011 are arranged in a honeycomb shape and are used to uniformly distribute the flow to the diffuser plate 400 .
  • the diameters of the plurality of first holes 3011 may be exactly the same or may be different.
  • the corresponding chuck (not shown) directly above the diffusion plate 400 drives the wafer (not shown) to perform a horizontal rotational motion. The closer the wafer is to the edge, the greater its linear speed. The linear velocity at the center of the wafer is approximately zero.
  • the liquid When the liquid reaches the wafer through the diffusion plate 400, the liquid will move more toward the periphery of the wafer. Therefore, in order to ensure that the flow rate is uniform when it reaches the wafer, it is first necessary to maintain a higher flow rate. More flow reaches the center of the diffuser plate 400, so more flow is required at the center of the center cap 301.
  • the diameters of the plurality of first holes 3011 are different, then The diameter of the first hole 3011 gradually becomes smaller from the center of the center cap 301 toward the direction in which the edge of the center cap 301 extends. In one embodiment, the diameters of the plurality of first holes 3011 are exactly the same.
  • the diameter of the first holes 3011 is 0.8-3.0 mm.
  • the density of the first holes 3011 extends from the center of the central cap 301 to the edge of the central cap 301 . slowing shrieking.
  • the density of the first holes 3011 in the extending direction from the center of the center cap 301 to the edge of the center cap 301 is the same, and the diameters of the plurality of first holes 3011 are arranged in varying diameters, from the center of the center cap 301 to the edge of the center cap 301 Gradually decrease, the diameter of the first hole 3011 is 3.0-0.8mm.
  • the flow stabilizing sleeve 302 is connected to the lower end surface of the center cap 301. At least one second hole 3021 is opened on the side wall of the flow stabilizing sleeve 302. During installation, the flow stabilizing sleeve 302 is inserted into the through hole 101 of the membrane frame 100. .
  • FIG. 7 shows a partial structural schematic diagram of the assembly of the electroplating solution buffer structure and the membrane frame in the embodiment of the present invention. As shown in FIG.
  • the space formed between the flow stabilizing sleeve 302 and the side wall of the through hole 101 of the membrane frame 100 is the first accommodation space 600
  • the internal space of the flow stabilizing sleeve 302 is the second accommodation space 700 .
  • the cathode plating liquid outlet of the transport branch pipe 200 and the second hole 3021 on the flow stabilizing sleeve 302 can be installed correspondingly, or they can be installed staggered from each other. During the actual process, the cathode plating liquid will enter the first accommodating space 600, then enter the second accommodating space 700 through the second hole 3021, and then spray out through the first hole 3011 opened in the center cap 301 to achieve buffering. The effect of plating solution.
  • the second holes 3021 on the side wall of the flow stabilizing sleeve 302 are evenly distributed on the side wall of the flow stabilizing sleeve 302, and when multiple second holes 3021 are provided, multiple second holes 3021 can be The centers of the two second holes 3021 are set on the same horizontal line, and the centers of different second holes 3021 can also be set on horizontal lines of different heights. When the centers of the plurality of second holes 3021 are arranged on horizontal lines of different heights, the layering of the electroplating liquid flowing from the first accommodating space 600 into the second accommodating space 700 can be further improved to buffer the sudden change of the electroplating liquid flow and stabilize the flow rate. changes in flow, thereby maintaining a smooth and stable effect.
  • the cathode plating liquid is transported from the cathode plating liquid inlet pipe (not shown) through the plating liquid inlet 201 to the transport branch pipe 200, and reaches the first accommodation space 600 through the transport branch pipe 200, and then electroplating
  • the liquid flows into the second containing space 700 inside the flow-stabilizing sleeve 302 through the second hole 3021 opened on the side wall of the flow-stabilizing sleeve 302, and then the electroplating liquid is evenly transferred to
  • the diffusion plate 400 is used to process the substrate.
  • FIG. 8 shows a schematic structural view from above of the diffuser plate according to the embodiment of the present invention.
  • FIG. 9 shows a schematic structural view from the bottom of the diffuser plate according to the embodiment of the present invention.
  • diffusion The plate 400 is installed on the top of the membrane frame 100, and the diffusion plate 400 has a plurality of third holes 401.
  • the diffusion plate 400 can redistribute the electric field and flow field between the anode and the cathode through the plurality of third holes 401, so that the electric field and flow field between the anode and the cathode are more uniformly distributed.
  • the plurality of third holes 401 are arranged in a honeycomb shape, and the diameters of the plurality of third holes 401 may be exactly the same or may be different.
  • the diameters of the third holes 401 distributed on the diffusion plate 400 are equal.
  • the diameter of the third hole 401 is 0.8-3.0 mm.
  • the diameter of the third hole 401 is 2.0 mm.
  • the third holes 401 distributed on the diffusion plate 400 have unequal diameters. It gradually decreases from the center to the edge of the diffusion plate 400, and the diameter of the third hole 401 is 3.0-0.8 mm.
  • the material of the diffusion plate 400 may be polyvinyl chloride, polypropylene, polyetheretherketone, polyvinylidene fluoride, soluble polytetrafluoroethylene, Teflon, etc.
  • the positional relationship between the first hole 3011 provided in the center cap 301 and the third hole 401 provided in the diffusion plate 400 may be: each first hole 3011 completely coincides with the corresponding third hole 401. ; It may also be that each first hole 3011 partially overlaps with the corresponding third hole 401, or each first hole 3011 does not overlap with the corresponding third hole 401 at all. When each first hole 3011 completely overlaps with the corresponding third hole 401, the diameter and arrangement of the first hole 3011 are exactly the same as the diameter and arrangement of the third hole 401.
  • FIG. 10 shows a schematic diagram of fluid transmission according to an embodiment of the present invention.
  • the fluid will directly pass through the diffusion plate 400 from the center cap 301 to the substrate without any obstruction, and the substrate will be electroplated. In this case , the plating efficiency is higher and the uniformity is better.
  • the cathode plating solution flows out of the cathode tank, passes through the filter and degasser and enters the plating chamber.
  • the cathode plating liquid entering the electroplating chamber enters the transport branch pipe 200 from the cathode plating liquid inlet 201, is transported to the cathode plating liquid outlet through the transport branch pipe 200, and flows into the first accommodation space 600.
  • the cathode plating liquid passes through the flow stabilizing sleeve.
  • the second hole 3021 opened in the center cap 302 enters the second receiving space 700 inside the flow stabilizing sleeve 302, and then is ejected through the first hole 3011 opened in the center cap 301, reaching the diffuser plate 400, and is carried out on the diffuser plate 400. Diffusion, the cathode plating liquid reaches the substrate through the plurality of third holes 401 on the diffusion plate 400, and the electroplating process is performed on the substrate.
  • the plating solution buffer structure 300 By arranging the plating solution buffer structure 300, the cathode plating solution is effectively prevented from directly rushing upward from the central through hole 101 of the film frame 100, affecting the electroplating uniformity in the center area of the substrate, and the velocity of the fluid is well buffered, thereby improving the crystal quality. Round package electrical
  • the plating process environment effectively solves the problem of differentiation between the center and edge of the plated substrate and improves the quality of electroplated products.

Abstract

本发明揭示了一种电镀设备，包括：膜架，中心设有通孔；输送支管，从膜架通孔的侧壁延伸到膜架的边缘；电镀液缓冲结构，包括中心帽和稳流套筒；中心帽，固定在膜架的通孔上方且覆盖膜架的通孔，顶部设有多个第一孔；稳流套筒，固定于中心帽下方并插设于膜架的通孔内，其侧壁上开设至少一个第二孔；扩散板，固定于膜架顶部，开设多个第三孔；其中，阴极电镀液通过输送支管进入稳流套筒与膜架通孔的侧壁之间，再通过稳流套筒侧壁上开设的第二孔进入稳流套筒内部，继而通过中心帽的第一孔供应到扩散板并通过第三孔到达基板。本发明能够对流体的流速进行缓冲，有效解决受镀基板的中心与边缘的差异化问题，提高电镀产品的质量。

Description

电镀设备 技术领域
本发明属于半导体制造技术领域，特别涉及电镀设备。
背景技术
目前倒装芯片封装工艺是市场的主流工艺，2.5D及3D封装也逐渐成熟量产化，在电镀应用领域，针对Solder产品的均匀性的提升及共面性的降低尤为重要，如果能得到有效改善，可以大大提高产品的可靠性，从而提高产品的竞争力。
晶圆级封装电镀目前采用两种电镀形式：水平电镀与垂直挂镀。所述的两种电镀方式对应使用的设备为水平喷流式电镀设备与垂直挂镀式设备。在实际工艺过程中，因为垂直挂镀式设备为较为传统的电镀设备，水平喷流式电镀设备是在垂直挂镀式设备之后进行改进的电镀设备，水平喷流式电镀设备具有操作方便，镀槽扩充性佳及自动化程度高的特性，镀液交叉污染风险低，镀液易于管理，节约用水量及成本，作业环境优，产品均匀性好，可靠性高等特点已然成为取代传统垂直挂镀式设备成为半导体制造厂商选购设备时的优先选择。
在使用水平喷流式电镀设备对基板进行电镀时，由于通过整个基板上的电流密度不均匀，会导致受镀基板上的镀膜均一性差，共面性高。如果在没有任何结构改进的情况下，简单地通过增加电镀液的流量来提高电镀速率，将会使镀膜的不均匀性更加严重，对于电镀设备来说，虽然化学物质是影响电镀速率的一个因素，但电镀速率主要与电镀液在整个基板上的流量有关。为了达到高的电镀速率，必须有大而稳定的电镀液流供应给基板。但是，一旦电镀液流量增加，就很难控制整个基板的电场和电镀液流动的均匀性。尤其是当电镀设备的流场扩散方式为喷泉式流场时，因为喷泉式流场为中心强，边缘相对较弱。如何控制流场的稳定，成为了如何改善受镀基板的中心与边缘的差异化的至关重要的点。
发明内容
为了更好的保障基板电镀的质量，控制流场的相对稳定，本申请提出一种电镀 设备，将阴极电镀液通过输送支管进入稳流套筒与膜架中心的通孔侧壁之间，阴极电镀液通过稳流套筒侧壁上开设的第二孔进入稳流套筒内部，继而通过中心帽的第一孔供应到扩散板上的方式，以解决当电镀设备的流场扩散方式为喷泉式流场时，流场不稳定的问题，进而解决所封装的基板产品的中心与边缘的差异化的问题。
本发明提出的一种电镀设备，包括：
膜架，中心设有通孔；
输送支管，从膜架通孔的侧壁延伸到膜架的边缘；
电镀液缓冲结构，包括中心帽和稳流套筒；
中心帽，固定在膜架的通孔上方且覆盖膜架的通孔，中心帽的顶部设有多个第一孔；
稳流套筒，固定于中心帽下方，稳流套筒的侧壁上开设至少一个第二孔，稳流套筒插设于膜架的通孔内；
扩散板，固定于膜架顶部，扩散板开设多个第三孔；
其中，阴极电镀液通过输送支管进入稳流套筒与膜架通孔的侧壁之间，阴极电镀液通过稳流套筒侧壁上开设的第二孔进入稳流套筒内部，继而通过中心帽的第一孔供应到扩散板并通过扩散板上的第三孔到达基板。
根据本申请实施例的一种具体实现方式，所述中心帽上的第一孔与扩散板上的第三孔的排布方式相同。
根据本申请实施例的一种具体实现方式，所述中心帽上的第一孔与扩散板上的第三孔的排布方式不同。
根据本申请实施例的一种具体实现方式，每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔完全重合。
根据本申请实施例的一种具体实现方式，每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔局部重合。
根据本申请实施例的一种具体实现方式，每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔完全不重合。
根据本申请实施例的一种具体实现方式，所述中心帽上的第一孔、扩散板上的第三孔的排布方式均为蜂窝状。
根据本申请实施例的一种具体实现方式，当所述稳流套筒上的第二孔的数量 大于1，所述稳流套筒上的第二孔均匀设置在稳流套筒侧壁上。
根据本申请实施例的一种具体实现方式，所述输送支管与通孔连通处与稳流套筒上的第二孔正对应安装。
根据本申请实施例的一种具体实现方式，所述输送支管与通孔连通处与稳流套筒上的第二孔相互错开安装。
根据本申请实施例的一种具体实现方式，所述稳流套筒上的第二孔的中心均位于同一水平线。
根据本申请实施例的一种具体实现方式，所述稳流套筒上的第二孔的中心位于不同水平线上。
根据本申请实施例的一种具体实现方式，所述中心帽上的第一孔等径设置。
根据本申请实施例的一种具体实现方式，所述中心帽上的第一孔变径设置。
本发明的电镀设备，采用将阴极电镀液通过输送支管进入稳流套筒与膜架中心的通孔侧壁之间形成的空间即第一容纳空间，阴极电镀液通过稳流套筒侧壁上开设的第二孔进入稳流套筒内部空间的第二容纳空间，继而通过中心帽的第一孔供应到扩散板上的方式，有效地防止阴极电镀液直接从膜架中心通孔内向上冲出，影响基板中心区域电镀均匀性的问题，对流体的速度进行了很好地缓冲，有效解决了受镀基板的中心与边缘的差异化问题，提高了电镀产品的质量。本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书以及附图中所指出的结构来实现和获得。
附图概述
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示出了本发明实施例的电镀设备局部结构示意图；
图2示出了本发明实施例的膜架俯视结构示意图；
图3示出了本发明实施例的膜架仰视结构示意图；
图4示出了本发明实施例的电镀液缓冲结构立体示意图；
图5示出了本发明实施例的电镀液缓冲结构俯视结构示意图；
图6示出了本发明实施例的电镀液缓冲结构仰视结构示意图；
图7示出了本发明实施例中电镀液缓冲结构与膜架装配完成局部结构示意图；
图8示出了本发明实施例的扩散板俯视结构示意图；
图9示出了本发明实施例的扩散板仰视结构示意图；以及
图10示出了本发明实施例的流体传输示意图。
本发明的较佳实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地说明，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在进行基板封装工艺过程中，当电镀设备的流场扩散方式为喷泉式流场时，因为喷泉式流场为中心强，边缘相对较弱，为了更好的保障基板电镀的质量，则需要控制流场的相对稳定。亟需解决如何通过控制流场的稳定，以改善所封装的基板产品的中心与边缘的差异化问题。本申请提出一种电镀设备，以解决当电镀设备的流场扩散方式为喷泉式流场时，流场不稳定的问题，进而解决所封装的基板产品的中心与边缘的差异化的问题。
请参照图1、图3，图1示出了本发明实施例的电镀设备局部结构示意图；图3示出了本发明实施例的膜架仰视结构示意图。如图1、图3所示，电镀设备包括：膜架100、输送支管200、电镀液缓冲结构300、扩散板400。膜架100的中心开设通孔101，通孔101内设置电镀液缓冲结构300，膜架100上设置有输送支管200，输送支管200由膜架100的中心向边缘延伸，膜架100上方固定设置扩散板400。
请参照图1至图3，其中，图2示出了本发明实施例的膜架俯视结构示意图。如图2、图3所示，膜架100，为基本上呈碟形的刚性穿孔结构或网状框架结构。在实际工艺过程中，膜架100下方会固定设置膜500。该膜500是用于 铜、镍、锡电镀的阳离子膜。此外，膜也可以是质子交换膜或是适用于合金电镀的覆盖有织物结构的常用膜。膜架100上还设有多个从膜架100中心的通孔101侧壁向膜架100边缘延伸的输送支管200。
输送支管200，分布于膜架100的架构上，当输送支管200的数量大于或等于2时，输送支管200均匀分布于膜架100上。均匀分布的输送支管200，能够保证阴极电镀液均匀的从不同的方向进入通孔101内，维持整体流量的稳定。输送支管200的一端与位于膜架100中心的通孔101连通，作为阴极电镀液的出液口；输送支管200的另一端与膜架100侧壁固定连接，输送支管200的底壁开设有电镀液进液口201，作为阴极电镀液的进液口，电镀液进液口201与设置于膜架100底部的阴极电镀液的进液管(未图示)相连通。在一实施例中，输送支管200的数量为6，6个输送支管200呈放射状设置于膜架100的架构上。
基板中心区域内的电镀很难控制，尤其是基板中心区域内的电镀液流量的均匀性很难控制，当电镀设备的流场扩散方式为喷泉式流场时，因为喷泉式流场为中心强，边缘相对较弱，导致电镀设备的流场不稳定，影响电镀效果。因此，本发明实施例在膜架100中心设置了电镀液缓冲结构300。
请参照图4至图6，图4示出了本发明实施例的电镀液缓冲结构立体示意图；图5示出了本发明实施例的电镀液缓冲结构俯视结构示意图；图6示出了本发明实施例的电镀液缓冲结构仰视结构示意图。如图4至图6所示，电镀液缓冲结构300包括：中心帽301和稳流套筒302。
中心帽301固定在膜架100的通孔101的上方，且中心帽301覆盖膜架100的通孔101，中心帽301的顶部设有多个第一孔3011。多个第一孔3011为蜂窝状排布，用于将流量均匀分布传送至扩散板400。该多个第一孔3011的直径可以完全相同，也可以不相同。考虑到在电镀过程中，扩散板400正上方对应设置的卡盘(未图示)带动晶圆(未图示)做水平旋转运动，晶圆越位于边缘的位置，其线速度越大，在晶圆中心位置的线速度约为零，当液体通过扩散板400到达晶圆时，液体会更多的向晶圆周边移动，因此为了保证流量到达晶圆上时是均匀的，首先需要保持更多的流量到达扩散板400中心，所以，中心帽301中心处需要更多的流量。当多个第一孔3011的直径不相同时，则从中 心帽301的中心向中心帽301的边缘延伸方向第一孔3011的直径逐渐变小。在一个实施例中，多个第一孔3011的直径完全相同，该第一孔3011的直径为0.8-3.0mm，从中心帽301的中心向中心帽301的边缘延伸方向第一孔3011的密度逐渐减小。在另一个实施例中，从中心帽301的中心向中心帽301的边缘延伸方向第一孔3011的密度相同，多个第一孔3011的直径为变径设置，由中心帽301的中心向边缘逐渐减小，该第一孔3011的直径为3.0-0.8mm。
稳流套筒302，连接于中心帽301下端面，稳流套筒302的侧壁上开设至少一个第二孔3021，安装时，稳流套筒302插设于膜架100的通孔101内。在装配的过程中，请参照图7，图7示出了本发明实施例中电镀液缓冲结构与膜架装配完成局部结构示意图。如图7所示，稳流套筒302与膜架100的通孔101侧壁之间形成的空间为第一容纳空间600，稳流套筒302的内部空间为第二容纳空间700。输送支管200的阴极电镀液出液口与稳流套筒302上的第二孔3021可以正对应安装，也可以相互错开安装。实际工艺过程中，阴极电镀液会进入第一容纳空间600，然后通过第二孔3021进入第二容纳空间700内，然后经过中心帽301上所开设的第一孔3011向外喷出，达到缓冲电镀液的效果。
当稳流套筒302的侧壁上第二孔3021的数量大于1时，第二孔3021均匀分布于稳流套筒302侧壁上，且在设置多个第二孔3021时，可以将多个第二孔3021的中心设置于同一水平线上，也可以将不同的第二孔3021的中心设置于不同高度的水平线上。当多个第二孔3021的中心设置于不同高度的水平线上时，能够进一步的提高电镀液从第一容纳空间600流进第二容纳空间700的层次性，达到缓冲电镀液流量的突变，稳定流量的变化，进而保持流畅稳定的效果。
在实际工艺过程中，阴极电镀液从阴极电镀液的进液管(未图示)经过电镀液进液口201输送至输送支管200内，经由输送支管200到达第一容纳空间600内，然后电镀液通过稳流套筒302侧壁上开设的第二孔3021流入稳流套筒302内部的第二容纳空间700内，然后电镀液通过中心帽301上开设的多个第一孔3011均匀传输至扩散板400，进而对基板进行加工。
请参照图8至图9，图8示出了本发明实施例的扩散板俯视结构示意图；图9示出了本发明实施例的扩散板仰视结构示意图。如图8、图9所示，扩散 板400安装在膜架100的顶部，扩散板400开设多个第三孔401。扩散板400通过多个第三孔401可以对阳极与阴极之间的电场和流场进行再分布，使得阳极与阴极之间的电场和流场分布的更加均匀。多个第三孔401的排布方式为蜂窝状排布，多个第三孔401的直径可以完全相同，也可以不相同。在一个实施例中，分布在扩散板400上的第三孔401的直径相等。示例性的，第三孔401的直径为0.8-3.0mm，更进一步地，第三孔401的直径为2.0mm。在另一个实施例中，分布在扩散板400上的第三孔401的直径不相等。由扩散板400的中心向边缘逐渐减小，该第三孔401的直径为3.0-0.8mm。扩散板400的材料可以是聚氯乙烯，聚丙烯，聚醚醚酮，聚偏氟乙烯，可溶性聚四氟乙烯，特氟龙等。
在实际工艺的过程中，中心帽301上开设的第一孔3011与扩散板400上开设的第三孔401的位置关系可以是：每一个第一孔3011分别与对应的第三孔401完全重合；也可以是：每一个第一孔3011分别与对应的第三孔401局部重合，还可以是每一个第一孔3011分别与对应的第三孔401完全不重合。当每一个第一孔3011分别与对应的第三孔401完全重合时，第一孔3011的孔径则与第三孔401的孔径及排布方式完全相同。示例性的，当第一孔3011分别与对应的第三孔401完全重合时，第一孔3011与第三孔401的孔径为2.0mm，排布方式均为蜂窝状排布。请参照图10，图10示出了本发明实施例的流体传输示意图。如图10所示，当第一孔3011分别与对应的第三孔401完全重合时，流体将没有经过任何阻挡从中心帽301直接经过扩散板400到达基板，对基板进行电镀，在该种情况下，电镀效率更高，均匀性更佳。
在实际工艺过程中，阴级电镀液从阴极罐中流出，经过过滤器和脱气器进入电镀腔。进入电镀腔的阴极电镀液从阴极电镀液进液口201进入输送支管200，经由输送支管200输送至阴极电镀液的出液口，流入第一容纳空间600内，阴极电镀液通过稳流套筒302上开设的第二孔3021进入稳流套筒302内部的第二容纳空间700内，进而通过中心帽301上所开设的第一孔3011喷出，到达扩散板400，在扩散板400上进行扩散，阴极电镀液通过扩散板400上的多个第三孔401到达基板，对基板进行电镀加工工艺。通过设置电镀液缓冲结构300，有效地防止阴极电镀液直接从膜架100中心通孔101内向上冲出，影响基板中心区域电镀均匀性，对流体的速度进行了很好地缓冲，改善了晶圆级封装的电 镀工艺环境，有效解决了受镀基板的中心与边缘的差异化问题，提高了电镀产品的质量。
尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (14)

  1. 一种电镀设备，其特征在于，包括：
    膜架，中心设有通孔；
    输送支管，从膜架通孔的侧壁延伸到膜架的边缘；
    电镀液缓冲结构，包括中心帽和稳流套筒；
    中心帽，固定在膜架的通孔上方且覆盖膜架的通孔，中心帽的顶部设有多个第一孔；
    稳流套筒，固定于中心帽下方，稳流套筒的侧壁上开设至少一个第二孔，稳流套筒插设于膜架的通孔内；
    扩散板，固定于膜架顶部，扩散板开设多个第三孔；
    其中，阴极电镀液通过输送支管进入稳流套筒与膜架通孔的侧壁之间，阴极电镀液通过稳流套筒侧壁上开设的第二孔进入稳流套筒内部，继而通过中心帽的第一孔供应到扩散板并通过扩散板上的第三孔到达基板。
  2. 根据权利要求1所述的电镀设备，其特征在于：
    所述中心帽上的第一孔与扩散板上的第三孔的排布方式相同。
  3. 根据权利要求1所述的电镀设备，其特征在于：
    所述中心帽上的第一孔与扩散板上的第三孔的排布方式不同。
  4. 根据权利要求2所述的电镀设备，其特征在于：
    每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔完全重合。
  5. 根据权利要求2所述的电镀设备，其特征在于：
    每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔局部重合。
  6. 根据权利要求2所述的电镀设备，其特征在于：
    每一个所述中心帽上的第一孔分别与扩散板上的对应的第三孔完全不重合。
  7. 根据权利要求2所述的电镀设备，其特征在于：
    所述中心帽上的第一孔、扩散板上的第三孔的排布方式均为蜂窝状。
  8. 根据权利要求1所述的电镀设备，其特征在于：
    当所述稳流套筒上的第二孔的数量大于1，所述稳流套筒上的第二孔均匀设置在稳流套筒侧壁上。
  9. 根据权利要求1所述的电镀设备，其特征在于：
    所述输送支管与通孔连通处与稳流套筒上的第二孔正对应安装。
  10. 根据权利要求1所述的电镀设备，其特征在于：
    所述输送支管与通孔连通处与稳流套筒上的第二孔相互错开安装。
  11. 根据权利要求1所述的电镀设备，其特征在于：
    所述稳流套筒上的第二孔的中心均位于同一水平线。
  12. 根据权利要求1所述的电镀设备，其特征在于：
    所述稳流套筒上的第二孔的中心位于不同水平线上。
  13. 根据权利要求1所述的电镀设备，其特征在于：
    所述中心帽上的第一孔等径设置。
  14. 根据权利要求1所述的电镀设备，其特征在于：
    所述中心帽上的第一孔变径设置。
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CN117810072A (zh) * 2024-03-01 2024-04-02 四川科尔威光电科技有限公司 一种晶圆芯片金锡合金均匀性的控制方法

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