WO2023179747A1 - 一种重复频率可调的超短谐振腔高重频光纤激光器 - Google Patents

一种重复频率可调的超短谐振腔高重频光纤激光器 Download PDF

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WO2023179747A1
WO2023179747A1 PCT/CN2023/083582 CN2023083582W WO2023179747A1 WO 2023179747 A1 WO2023179747 A1 WO 2023179747A1 CN 2023083582 W CN2023083582 W CN 2023083582W WO 2023179747 A1 WO2023179747 A1 WO 2023179747A1
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repetition frequency
refractive index
index lens
ultra
resonant cavity
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PCT/CN2023/083582
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English (en)
French (fr)
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韦小明
凌琳
文晓晓
王文龙
杨中民
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华南理工大学
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08004—Construction or shape of optical resonators or components thereof incorporating a dispersive element, e.g. a prism for wavelength selection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity

Definitions

  • the invention belongs to the field of high-repetition frequency passive mode-locked fiber lasers, and specifically relates to an ultra-short resonant cavity high-repetition frequency fiber laser with adjustable repetition frequency.
  • High repetition frequency laser light sources have very important research value and application potential in many fields such as fine spectral measurement, high-speed optical sampling, high-quality optical communications, fine micro-machining, and nonlinear biological imaging.
  • fiber lasers compared with solid lasers, semiconductor lasers, gas lasers, dye lasers, etc., fiber lasers have outstanding advantages such as compact structure, low production cost, strong heat dissipation capacity, and high pump conversion efficiency, making them ideal for scientific research and industrial processing.
  • Mode locking is an important means of generating femtosecond ultrashort pulses, and passive mode-locked fiber lasers are the main way to generate high repetition frequency ultrashort pulse lasers.
  • passive mode-locked fiber lasers are the main way to generate high repetition frequency ultrashort pulse lasers.
  • researchers have tried to explore in multiple dimensions to improve the performance of lasers, such as obtaining shorter pulse widths, higher output power, lower intensity noise, and achieving scalable output wavelengths. Adjustments and so on.
  • it is particularly important to achieve adjustable repetition frequency of the output laser pulse by using only one laser to obtain output with multiple repetition frequencies.
  • the repetition frequency formula of the laser It can be seen that in order to achieve an adjustable repetition frequency, the length of the resonant cavity can be changed.
  • BR Washburn et al. achieved a repetition frequency adjustment from 49.3 MHz to 50.1 MHz by adding a fiber delay line to an erbium-doped fiber ring cavity, with a repetition frequency change of 800 kHz (Washburn B, Fox R, Newbury N, et al. al.Fiber-laser-based frequency comb with a tunable repetition rate[J].
  • Optics Express,2004,12(20):4999-5004. For high-repetition-frequency fiber lasers, the fundamental repetition frequency >1GHz means that the resonant cavity length will be limited to the cm level.
  • the change in the cavity length in the mm level will bring about the repetition frequency change in the MHz or even GHz level.
  • the purpose of the present invention is to provide an ultra-short resonant cavity high repetition frequency fiber laser with adjustable repetition frequency based on a gradient refractive index lens, adding two gradient refractive indexes into the ultra-short resonant cavity a lens that changes the length of the ultra-short resonant cavity by changing the distance between the first gradient index lens and the second gradient index lens, In order to achieve the adjustment of the repetition frequency of the laser pulse output by the high repetition frequency fiber laser.
  • An ultra-short resonant cavity high repetition frequency fiber laser with adjustable repetition frequency including: a pump source, a wavelength division multiplexer, an optical isolator and an ultra-short resonant cavity with adjustable repetition frequency.
  • the wavelength division multiplexer is In order to couple the pump light generated by the pump source into the ultra-short resonant cavity with adjustable repetition frequency and output the generated signal light to the outside of the ultra-short resonant cavity with adjustable repetition frequency, the optical isolator and the wavelength division Multiplexer connection.
  • the ultra-short resonant cavity with adjustable repetition frequency includes: a first gradient refractive index lens, a second gradient refractive index lens, a ferrule, a sleeve, a gain fiber, a semiconductor saturable absorption mirror and a dielectric film;
  • the semiconductor saturable absorbing mirror is arranged on one end face of the first gradient refractive index lens.
  • the other end of the first gradient refractive index lens is connected to one end of the second gradient refractive index lens through a sleeve.
  • the other end of the second gradient refractive index lens is connected at intervals.
  • One end is connected to one end of the ferrule, the other end of the ferrule is provided with a dielectric film, and the gain optical fiber is located in the ferrule.
  • the ultra-short resonant cavity with adjustable repetition frequency includes: a first gradient refractive index lens, a second gradient refractive index lens, a ferrule, a sleeve, a gain fiber, a semiconductor saturable absorption mirror and a dielectric film;
  • the semiconductor saturable absorption mirror is arranged on one end face of the ferrule, the other end of the ferrule is connected to one end of the first gradient refractive index lens, and the other end of the first gradient refractive index lens is connected to the second gradient refractive index lens through a sleeve.
  • One end of the lens is connected at intervals, a dielectric film is provided on the other end surface of the second gradient refractive index lens, and the gain optical fiber is located in the ferrule.
  • the sleeve is provided outside the first ferrule, the first gradient refractive index lens and the second gradient refractive index lens.
  • the ultra-short resonant cavity with adjustable repetition frequency includes: a first gradient refractive index lens, a second gradient refractive index lens, a first ferrule, a second ferrule, a first sleeve, and a second sleeve.
  • the semiconductor saturable absorbing mirror is arranged on one end face of the first ferrule, the other end of the first ferrule is connected to one end of the first gradient refractive index lens through a second sleeve, and the second gradient refractive index lens passes through a third sleeve
  • the tube is connected to the second ferrule, the dielectric film is disposed on the end face of the second ferrule, the other end of the first gradient refractive index lens is spacedly connected to the second gradient refractive index lens through the first sleeve, and the first gain optical fiber is located on the second ferrule.
  • the second gain optical fiber is located in the second ferrule.
  • parallel light is transmitted between the first gradient refractive index lens and the second gradient refractive index lens, and changing the distance between the first gradient refractive index lens and the second gradient refractive index lens will not affect the transmission of parallel light.
  • the propagation trajectory therebetween that is, by adjusting the distance L 1 between the first gradient refractive index lens and the second gradient refractive index lens, the total cavity length L of the ultra-short resonant cavity can be adjusted.
  • the ultrashort resonant cavity with adjustable repetition frequency is a Fabry-Perot cavity.
  • the reflectivity of the dielectric film to the generated laser light is greater than 60%.
  • the modulation depth of the semiconductor saturable absorption mirror is 1% to 10%.
  • the gain optical fiber is a rare earth ion doped optical fiber
  • the doped rare earth ions include one or more of erbium, ytterbium, thulium and holmium.
  • the cavity length of the ultra-short resonant cavity with adjustable repetition frequency is 1 to 10 centimeters.
  • the pump source is a semiconductor single-mode laser.
  • the present invention uses two gradient refractive index lenses in the ultra-short resonant cavity and changes the distance between the first gradient refractive index lens and the second gradient refractive index lens to adjust the total cavity length of the ultra-short resonant cavity, thereby changing the high
  • the repetition frequency of the output pulses of the repetition frequency laser meets the different needs of people in various applications when using high repetition frequency lasers, minimizing economic and time costs, and maximizing the efficiency of resource use.
  • Figure 1 is a schematic structural diagram of an ultra-short resonator high repetition frequency fiber laser with adjustable repetition frequency provided by the present invention
  • Figure 2 is a schematic structural diagram of an ultra-short resonant cavity with adjustable repetition frequency provided in Embodiment 1 of the present invention
  • Figure 3 is a schematic structural diagram of an ultra-short resonant cavity with adjustable repetition frequency provided in Embodiment 2 of the present invention.
  • Figure 4 is a schematic structural diagram of an ultra-short resonant cavity with adjustable repetition frequency provided in Embodiment 3 of the present invention.
  • this embodiment provides an ultra-short resonant cavity high repetition frequency fiber laser with adjustable repetition frequency, including It includes a pump source 3, a wavelength division multiplexer 2, an optical isolator 4 and an ultra-short resonant cavity 1 with adjustable repetition frequency.
  • the wavelength division multiplexer 2 is used to couple the pump light generated by the pump source 3. Entering the ultra-short resonant cavity 1 with adjustable repetition frequency and outputting the generated signal light to the outside of the ultra-short resonant cavity 1 with adjustable repetition frequency, the optical isolator 4 is connected to the wavelength division multiplexer 2 for Prevent the effects of return light.
  • the ultra-short resonant cavity 1 with adjustable repetition frequency includes: a first gradient refractive index lens 6, a second gradient refractive index lens 8, a ferrule 10, a sleeve 7, a gain fiber 9, a semiconductor can Saturable absorption mirror 5 and dielectric film 11;
  • the semiconductor saturable absorbing mirror 5 is arranged on one end surface of the first gradient refractive index lens 6.
  • the other end of the first gradient refractive index lens 6 is connected to one end of the second gradient refractive index lens 8 through a sleeve 7.
  • the other end of the gradient refractive index lens 8 is connected to one end of the ferrule 10.
  • the other end of the ferrule 10 is provided with a dielectric film 11.
  • the sleeve 7 is provided on the ferrule 10, the first gradient refractive index lens 6 and the second gradient refractive index lens 8. The outside of the refractive index lens 8.
  • the ultra-short resonant cavity is a Fabry-Perot cavity structure.
  • the resonant cavity has a compact structure and the overall length of the structure is ⁇ 10cm. It can achieve a mode-locked pulse output with a repetition frequency of >1GHz and obtain repetitions in the order of MHz or even GHz. Frequency adjustment amount.
  • Pump source 3 is a semiconductor single-mode laser with a center wavelength of 974nm and a maximum pump power of 460mW.
  • the dielectric film 7 is a two-color dielectric film plated on one end surface of the ferrule 10 by plasma sputtering. It has a high transmittance (>80%) for pump light and a high transmittance for signal light. reflectivity (>80%).
  • the semiconductor saturable absorbing mirror 5 is fixed on one end surface of the first graded refractive index lens 2. Its central wavelength is 1040nm, the area is 1 ⁇ 1mm, the thickness is 450 ⁇ m, the modulation depth is 5%, and the unsaturation loss is 3%.
  • the saturation flux is 40 ⁇ J/cm 2 , the relaxation time is 1ps, and the damage threshold is 3mJ/cm 2 .
  • the gain optical fiber 9 is fixed in the ferrule 10 using optical glue, and is an ytterbium-doped rare earth ion-doped optical fiber.
  • the ferrule 10 is a ceramic ferrule with an inner diameter of 125 ⁇ m, which matches the cladding diameter of the gain fiber 9, and an outer diameter of 2.5 mm, which is equal to the outer diameters of the first gradient refractive index lens 6 and the second gradient refractive index lens 8. Both ends of the ferrule 10 need to be vertically polished.
  • the sleeve 7 is a ceramic sleeve with an inner diameter of 2.5 mm, which matches the outer diameters of the ferrule 10 , the first gradient refractive index lens 6 and the second gradient refractive index lens 8 .
  • the first gradient refractive index lens 6 and the second gradient refractive index lens 8 affect the optical path by changing the refractive index of the lens itself.
  • the refractive index changes with the radial direction. All optical paths in the lens are the same, which can convert parallel light. Convert the light transmitted in the optical fiber, so parallel light is transmitted between the first graded refractive index lens 6 and the second graded refractive index lens 8.
  • Changing the distance between the two graded refractive index lenses will not change the light between them. propagation trajectory.
  • the length L of the entire ultrashort resonant cavity can be changed by changing the distance L 1 between the two graded refractive indexes, according to It can be seen that changing the ultrashort resonant cavity
  • the cavity length can adjust the laser repetition frequency. When the distance change between the two gradient refractive index lenses is ⁇ L 1 , the laser repetition frequency change is (the cavity length becomes longer) or (The cavity length becomes shorter).
  • the ultra-short resonant cavity 1 with adjustable repetition frequency includes: a first gradient refractive index lens 6, a second gradient refractive index lens 8, a ferrule 10, a sleeve 7, and a gain fiber 9 , semiconductor saturable absorption mirror 5 and dielectric film 11.
  • the ultra-short resonant cavity 1 with adjustable repetition frequency provided in this embodiment is different from Embodiment 1 in that the semiconductor saturable absorption mirror 5 is provided on one end face of the ferrule 10, and the other end of the ferrule 10 is connected to the first end surface of the ferrule 10.
  • One end of the graded refractive index lens 6 is connected, and the other end of the first graded refractive index lens 6 is connected to one end of the second graded refractive index lens 8 through a sleeve 7.
  • the other end of the second graded refractive index lens 8 is provided with a Dielectric film 11.
  • pump source 3 is a semiconductor single-mode laser with a center wavelength of 976nm and a maximum pump power of 480mW.
  • the dielectric film 7 is a dichromatic film plated on one end surface of the second gradient refractive index lens 8 by plasma sputtering. It has a high transmittance (>80%) for the pump light and is good for the signal. Light has a high reflectivity (>80%).
  • the semiconductor saturable absorbing mirror 5 is fixed on one end surface of the first graded refractive index lens 2. Its central wavelength is 1550nm, the area is 1 ⁇ 1mm, the thickness is 450 ⁇ m, the modulation depth is 4%, and the unsaturation loss is 6%.
  • the saturation flux is 15 ⁇ J/cm 2 , the relaxation time is 5ps, and the damage threshold is 1mJ/cm 2 .
  • the gain optical fiber 9 is fixed in the ferrule 10 using optical glue, and is an erbium and ytterbium co-doped rare earth ion-doped optical fiber.
  • the ultra-short resonant cavity 1 with adjustable repetition frequency includes: a first gradient refractive index lens 6, a second gradient refractive index lens 8, a first ferrule 10, and a second ferrule 14. , the first casing 7, the second casing 12, the third casing 13, the first gain fiber 9, the second gain fiber 15, the semiconductor saturable absorption mirror 5 and the dielectric film 11;
  • the ultra-short resonant cavity 1 with adjustable repetition frequency provided in this embodiment is different from Embodiment 1 in that the semiconductor saturable absorption mirror 5 is provided on one end surface of the first ferrule 10 and the other end surface of the first ferrule 10 .
  • One end is connected to the first gradient refractive index lens 6 through the second sleeve 12
  • the second gradient refractive index lens 8 is connected to the second ferrule 14 through the third sleeve 13
  • the dielectric film 11 is arranged on the second ferrule 14.
  • the other end of the first gradient refractive index lens 6 is spacedly connected to the second gradient refractive index lens 8 through the first sleeve 7 .
  • pump source 3 is a semiconductor single-mode laser with a center wavelength of 1570nm and a maximum pump power of 500mW.
  • the dielectric film 7 is a dichromatic film plated on one end of the second ferrule 14 by plasma sputtering. It has a high transmittance (>80%) for the pump light and a high transmittance for the signal light. High reflectivity (>80%).
  • the semiconductor saturable absorbing mirror 5 is fixed on one end face of the first ferrule 10. Its central wavelength is 2000nm, the area is 1 ⁇ 1mm, the thickness is 450 ⁇ m, the modulation depth is 12%, the unsaturation loss is 8%, and the saturation pass The amount is 65 ⁇ J/cm 2 , the relaxation time is 10ps, and the damage threshold is 2mJ/cm 2 .
  • the first gain fiber 9 and the second gain fiber 15 are respectively fixed in the first ferrule 10 and the second ferrule 14 using optical glue, which are thulium-doped rare earth ion-doped fibers.
  • the first ferrule 10 and the second ferrule 14 are both ceramic ferrules, with an inner diameter of 125 ⁇ m, matching the cladding diameters of the first gain fiber 9 and the second gain fiber 15, and an outer diameter of 2.5 mm, with the first gradient
  • the outer diameters of the refractive index lens 6 and the second gradient refractive index lens 8 are equal, and both ends of the first ferrule 10 and the second ferrule 14 need to be vertically polished.
  • the first sleeve 7, the second sleeve 12 and the third sleeve 13 are all ceramic sleeves with an inner diameter of 2.5 mm. They are connected with the first ferrule 10, the second ferrule 14, the first gradient refractive index lens 6 and The outer diameter of the second gradient index lens 8 is matched.

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  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

一种重复频率可调的超短谐振腔高重频光纤激光器，包括：泵浦源（3）、波分复用器（2）、光隔离器（4）和重复频率可调的超短谐振腔（1），波分复用器（2）用于将泵浦源（3）产生的泵浦光耦合进入重复频率可调的超短谐振腔（1）并将产生的信号光输出至重复频率可调的超短谐振腔（1）外，光隔离器（4）与波分复用器（2）连接。重复频率可调的超短谐振腔（1）包括：第一渐变折射率透镜（6）、第二渐变折射率透镜（8）、插芯（10）、套管（7）、增益光纤（9）、半导体可饱和吸收镜（5）和介质膜（11）。通过调节第一渐变折射率透镜（6）和第二渐变折射率透镜（8）之间的距离以改变超短谐振腔（1）的腔长，从而获得重复频率可调的高重频被动锁模激光脉冲输出。

Description

一种重复频率可调的超短谐振腔高重频光纤激光器 技术领域
本发明属于高重频被动锁模光纤激光器领域，具体涉及一种重复频率可调的超短谐振腔高重频光纤激光器。
背景技术
高重频的激光光源在精细的光谱测量、高速光学采样、高质量光通信、精细微加工和非线性生物成像等众多领域都拥有非常重要的研究价值和应用潜力。同时，相比较于固体激光器、半导体激光器、气体激光器、染料激光器等，光纤激光器具有结构紧凑、制作成本低、散热能力强、泵浦转换效率高等突出优点，使其在科学研究和工业加工中备受青睐，成为研究高可靠性、高脉冲质量激光源的首选对象。
锁模是产生飞秒超短脉冲的重要手段，而被动锁模光纤激光器则是产生高重频超短脉冲激光的主要方式。为了增强被动锁模激光器的实际应用，研究学者们尝试在多个维度进行探索以提高激光器的性能，比如获得更短的脉冲宽度、更高的输出功率、更低的强度噪声、实现输出波长可调节等等。为了满足不同场景和应用的需求，通过只使用一台激光器就能获得多种重复频率的输出，实现输出激光脉冲的重复频率可调节变得尤为重要。
根据激光器的重复频率公式可知，要想实现重复频率的可调节，可以改变谐振腔的长度。2004年，B.R.Washburn等人通过在掺铒光纤环形腔内加入光纤延迟线的方式，实现了49.3MHz到50.1MHz的重复频率调节，重复频率改变量为800kHz(Washburn B,Fox R,Newbury N,et al.Fiber-laser-based frequency comb with a tunable repetition rate[J].Optics Express,2004,12(20):4999-5004.)。对于高重频光纤激光器，其基频重复频率>1GHz意味着其谐振腔长度将限制在cm量级，因此mm量级的腔长改变量将会带来MHz甚至GHz量级的重频改变量，而对于本身就是超短谐振腔的高重频激光器来说，要在谐振腔内实现微小的改变量很难通过使用传统的光纤延迟线的方式来进行调节。
发明内容
为了克服上述现有技术的缺点，本发明的目的是提供一种基于渐变折射率透镜实现重复频率可调的超短谐振腔高重频光纤激光器，在超短谐振腔内加入两个渐变折射率透镜，通过改变第一渐变折射率透镜和第二渐变折射率透镜之间的距离来改变超短谐振腔腔长， 以实现高重频光纤激光器输出激光脉冲重复频率的可调节。
为了实现上述目的，本发明至少通过如下技术方案之一实现：
一种重复频率可调的超短谐振腔高重频光纤激光器，包括：泵浦源、波分复用器、光隔离器和重复频率可调的超短谐振腔，所述波分复用器用于将泵浦源产生的泵浦光耦合进入重复频率可调的超短谐振腔并将产生的信号光输出至重复频率可调的超短谐振腔外，所述光隔离器与所述波分复用器连接。
进一步地，所述重复频率可调的超短谐振腔，包括：第一渐变折射率透镜、第二渐变折射率透镜、插芯、套管、增益光纤、半导体可饱和吸收镜和介质膜；
所述半导体可饱和吸收镜设置在第一渐变折射率透镜的一个端面上，第一渐变折射率透镜的另一端通过套管与第二渐变折射率透镜一端间隔连接，第二渐变折射率透镜另一端与插芯一端连接，插芯的另一端面上设置有介质膜，所述增益光纤位于插芯内。
进一步地，所述重复频率可调的超短谐振腔，包括：第一渐变折射率透镜、第二渐变折射率透镜、插芯、套管、增益光纤、半导体可饱和吸收镜和介质膜；
所述半导体可饱和吸收镜设置在插芯的一个端面上，插芯的另一端与第一渐变折射率透镜的一端连接，第一渐变折射率透镜的另一端通过套管与第二渐变折射率透镜的一端间隔连接，第二渐变折射率透镜的另一端面上设置有介质膜，所述增益光纤位于插芯内。
进一步地，所述套管设在所述第一插芯、第一渐变折射率透镜和第二渐变折射率透镜的外侧。
进一步地，所述重复频率可调的超短谐振腔，包括：第一渐变折射率透镜、第二渐变折射率透镜、第一插芯、第二插芯、第一套管、第二套管、第三套管、第一增益光纤、第二增益光纤、半导体可饱和吸收镜和介质膜；
所述半导体可饱和吸收镜设置在第一插芯的一个端面上，第一插芯的另一端通过第二套管与第一渐变折射率透镜一端连接，第二渐变折射率透镜通过第三套管与第二插芯连接，介质膜设置在第二插芯的端面上，第一渐变折射率透镜的另一端通过第一套管与第二渐变折射率透镜间隔连接，第一增益光纤位于第一插芯中，第二增益光纤位于第二插芯中。
进一步地，所述第一渐变折射率透镜和第二渐变折射率透镜之间为平行光传输，改变第一渐变折射率透镜和第二渐变折射率透镜之间的距离将不会影响平行光在其间的传播轨迹，即通过调节第一渐变折射率透镜和第二渐变折射率透镜之间的距离L1，实现超短谐振腔总腔长L的调节。
进一步地，所述重复频率可调的超短谐振腔为法布里-珀罗腔。
进一步地，所述介质膜对产生的激光的反射率大于60％。
进一步地，所述半导体可饱和吸收镜的调制深度为1％至10％。
进一步地，所述增益光纤为稀土离子掺杂光纤，掺杂的稀土离子包括铒、镱、铥和钬的一种或几种。
进一步地，所述述重复频率可调的超短谐振腔的腔长为1至10厘米。
进一步地，所述泵浦源为半导体单模激光器。
与现有的技术相比，本发明的有益效果为：
本发明通过在超短谐振腔内使用两个渐变折射率透镜，改变第一渐变折射率透镜和第二渐变折射率透镜之间的距离可以实现超短谐振腔总腔长的调节，从而改变高重频激光器输出脉冲的重复频率，满足了人们在使用高重频激光器时在多种应用场合的不同需求，实现了经济和时间成本的最低化，对资源使用的最高效益化。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍。应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定。对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本发明提供的重复频率可调的超短谐振腔高重频光纤激光器结构原理图；
图2为本发明实施例1提供的重复频率可调的超短谐振腔结构示意图；
图3为本发明实施例2提供的重复频率可调的超短谐振腔结构示意图；
图4为本发明实施例3提供的重复频率可调的超短谐振腔结构示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面将结合附图和具体的实施实例对本发明的技术方案进行进一步详细说明。需要指出的是，此处描述的具体实施例仅用以解释本申请，并不用于限定本申请。
实施例1
如图1所示，本实施例提供的一种重复频率可调的超短谐振腔高重频光纤激光器，包 括泵浦源3、波分复用器2、光隔离器4和重复频率可调的超短谐振腔1，所述波分复用器2用于将泵浦源3产生的泵浦光耦合进入重复频率可调的超短谐振腔1并将产生的信号光输出至重复频率可调的超短谐振腔1外，所述光隔离器4与所述波分复用器2连接，用于防止返回光的影响。
如图2所示，所述重复频率可调的超短谐振腔1包括：第一渐变折射率透镜6、第二渐变折射率透镜8、插芯10、套管7、增益光纤9、半导体可饱和吸收镜5和介质膜11；
所述半导体可饱和吸收镜5设置在第一渐变折射率透镜6的一个端面上，第一渐变折射率透镜6的另一端通过套管7与第二渐变折射率透镜8一端间隔连接，第二渐变折射率透镜8另一端与插芯10一端连接，插芯10的另一端面上设置有介质膜11，套管7设在所述插芯10、第一渐变折射率透镜6和第二渐变折射率透镜8的外侧。
在实际应用中，超短谐振腔为法布里-珀罗腔结构，谐振腔结构紧凑，结构总体长度<10cm，可以实现>1GHz的重复频率锁模脉冲输出，获得MHz甚至GHz量级的重复频率调节量。
泵浦源3为半导体单模激光器，其中心波长为974nm，最大泵浦功率为460mW。
介质膜7为通过等离子体溅射的方式镀制在插芯10一端面上的二色介质膜，其对泵浦光有较高的透过率(>80％)，对信号光有较高的反射率(>80％)。
半导体可饱和吸收镜5固定在第一渐变折射率透镜2的其中一端面上，其中心波长为1040nm，面积为1×1mm，厚度为450μm，调制深度为5％，不饱和损耗为3％，饱和通量为40μJ/cm2，弛豫时间为1ps，损伤阈值为3mJ/cm2。
增益光纤9使用光学胶固定在插芯10中，其为掺镱稀土离子掺杂光纤。
插芯10为陶瓷插芯，内径为125μm，与增益光纤9的包层直径相匹配，外径为2.5mm，与第一渐变折射率透镜6和第二渐变折射率透镜8的外径相等，插芯10两端需进行垂直抛光处理。
套管7为陶瓷套管，其内径为2.5mm，与插芯10、第一渐变折射率透镜6和第二渐变折射率透镜8的外径相匹配。
第一渐变折射率透镜6和第二渐变折射率透镜8通过改变透镜本身的折射率来影响光路，其折射率随径向而改变，透镜中所有的光程是相同的，其可将平行光和光纤中传输的光进行转换，因此第一渐变折射率透镜6和第二渐变折射率透镜8之间为平行光传输，改变两个渐变折射率透镜之间的距离将不会改变光在其间的传播轨迹。通过改变两个渐变折射率之间的距离L1可改变整个超短谐振腔的长度L，根据可知，改变超短谐振腔的 腔长可以实现激光器重复频率的调节。当两个渐变折射率透镜之间距离改变量为ΔL1时，激光器重频改变量为(腔长变长)或(腔长变短)。
实施例2
如图3所示，本实施例提供的重复频率可调的超短谐振腔1包括：第一渐变折射率透镜6、第二渐变折射率透镜8、插芯10、套管7、增益光纤9、半导体可饱和吸收镜5和介质膜11。
本实施例提供的重复频率可调的超短谐振腔1与实施例1不同的是，所述半导体可饱和吸收镜5设置在插芯10的一个端面上，插芯10的另一端与第一渐变折射率透镜6的一端连接，第一渐变折射率透镜6的另一端通过套管7与第二渐变折射率透镜8的一端间隔连接，第二渐变折射率透镜8的另一端面上设置有介质膜11。
在实际应用中，泵浦源3为半导体单模激光器，其中心波长为976nm，最大泵浦功率为480mW。
介质膜7为通过等离子体溅射的方式镀制在第二渐变折射率透镜8一端面上的二色介质膜，其对泵浦光有较高的透过率(>80％)，对信号光有较高的反射率(>80％)。
半导体可饱和吸收镜5固定在第一渐变折射率透镜2的其中一端面上，其中心波长为1550nm，面积为1×1mm，厚度为450μm，调制深度为4％，不饱和损耗为6％，饱和通量为15μJ/cm2，弛豫时间为5ps，损伤阈值为1mJ/cm2。
增益光纤9使用光学胶固定在插芯10中，其为铒镱共掺稀土离子掺杂光纤。
实施例3
如图4所示，本实施例提供的重复频率可调的超短谐振腔1包括：第一渐变折射率透镜6、第二渐变折射率透镜8、第一插芯10、第二插芯14、第一套管7、第二套管12、第三套管13、第一增益光纤9、第二增益光纤15、半导体可饱和吸收镜5和介质膜11；
本实施例提供的重复频率可调的超短谐振腔1与实施例1不同的是，所述半导体可饱和吸收镜5设置在第一插芯10的一个端面上，第一插芯10的另一端通过第二套管12与第一渐变折射率透镜6一端连接，第二渐变折射率透镜8通过第三套管13与第二插芯14连接，介质膜11设置在第二插芯14的端面上，第一渐变折射率透镜6的另一端通过第一套管7与第二渐变折射率透镜8间隔连接。
在实际应用中，泵浦源3为半导体单模激光器，其中心波长为1570nm，最大泵浦功率为500mW。
介质膜7为通过等离子体溅射的方式镀制在第二插芯14一端上的二色介质膜，其对泵浦光有较高的透过率(>80％)，对信号光有较高的反射率(>80％)。
半导体可饱和吸收镜5固定在第一插芯10的其中一端面上，其中心波长为2000nm，面积为1×1mm，厚度为450μm，调制深度为12％，不饱和损耗为8％，饱和通量为65μJ/cm2，弛豫时间为10ps，损伤阈值为2mJ/cm2。
第一增益光纤9和第二增益光纤15分别使用光学胶固定在第一插芯10和第二插芯14中，其为掺铥稀土离子掺杂光纤。
第一插芯10和第二插芯14均为陶瓷插芯，内径为125μm，与第一增益光纤9和第二增益光纤15的包层直径相匹配，外径为2.5mm，与第一渐变折射率透镜6和第二渐变折射率透镜8的外径相等，第一插芯10和第二插芯14的两端均需进行垂直抛光处理。
第一套管7、第二套管12和第三套管13均为陶瓷套管，其内径为2.5mm，与第一插芯10、第二插芯14、第一渐变折射率透镜6和第二渐变折射率透镜8的外径相匹配。
本说明书中各个实施例采用递进的方式描述，每个实施例重点说明的都是与其他实施例的不同之处，各个实施例之间相同相似部分互相参见即可。
本发明的上述实施例仅仅是为清楚地说明本发明所作的举例，而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明权利要求的保护范围之内。

Claims (10)

  1. 一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，包括：泵浦源(3)、波分复用器(2)、光隔离器(4)和重复频率可调的超短谐振腔(1)，所述波分复用器(2)用于将泵浦源(3)产生的泵浦光耦合进入重复频率可调的超短谐振腔(1)并将产生的信号光输出至重复频率可调的超短谐振腔(1)外，所述光隔离器(4)与所述波分复用器(2)连接。
  2. 根据权利要求1所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述重复频率可调的超短谐振腔(1)包括：第一渐变折射率透镜(6)、第二渐变折射率透镜(8)、插芯(10)、套管(7)、增益光纤(9)、半导体可饱和吸收镜(5)和介质膜(11)；
    所述半导体可饱和吸收镜(5)设置在第一渐变折射率透镜(6)的一个端面上，第一渐变折射率透镜(6)的另一端通过套管(7)与第二渐变折射率透镜(8)一端间隔连接，第二渐变折射率透镜(8)另一端与插芯(10)一端连接，插芯(10)的另一端面上设置有介质膜(11)，所述增益光纤(9)位于插芯(10)内。
  3. 根据权利要求1所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述重复频率可调的超短谐振腔(1)包括：第一渐变折射率透镜(6)、第二渐变折射率透镜(8)、插芯(10)、套管(7)、增益光纤(9)、半导体可饱和吸收镜(5)和介质膜(11)；
    所述半导体可饱和吸收镜(5)设置在插芯(10)的一个端面上，插芯(10)的另一端与第一渐变折射率透镜(6)的一端连接，第一渐变折射率透镜(6)的另一端通过套管(7)与第二渐变折射率透镜(8)的一端间隔连接，第二渐变折射率透镜(8)的另一端面上设置有介质膜(11)，所述增益光纤(9)位于插芯(10)内。
  4. 根据权利要求2或者3所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述套管(7)设在所述第一插芯(10)、第一渐变折射率透镜(6)和第二渐变折射率透镜(8)的外侧。
  5. 根据权利要求1所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述重复频率可调的超短谐振腔(1)包括：第一渐变折射率透镜(6)、第二渐变折射率透镜(8)、第一插芯(10)、第二插芯(14)、第一套管(7)、第二套管(12)、第三套管(13)、第一增益光纤(9)、第二增益光纤(15)、半导体可饱和吸收镜(5)和介质膜(11)；
    所述半导体可饱和吸收镜(5)设置在第一插芯(10)的一个端面上，第一插芯(10)的另一端通过第二套管(12)与第一渐变折射率透镜(6)一端连接，第二渐变折射率透镜 (8)通过第三套管(13)与第二插芯(14)连接，介质膜(11)设置在第二插芯(14)的端面上，第一渐变折射率透镜(6)的另一端通过第一套管(7)与第二渐变折射率透镜(8)间隔连接，第一增益光纤(9)位于第一插芯(10)中，第二增益光纤(15)位于第二插芯(14)中。
  6. 根据权利要求2～5任一项所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述第一渐变折射率透镜(6)和第二渐变折射率透镜(8)之间为平行光传输，改变第一渐变折射率透镜(6)和第二渐变折射率透镜(8)之间的距离将不会影响平行光在其间的传播轨迹，即通过调节第一渐变折射率透镜(6)和第二渐变折射率透镜(8)之间的距离L1，实现超短谐振腔(1)总腔长L的调节。
  7. 根据权利要求1所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述重复频率可调的超短谐振腔(1)为法布里-珀罗腔。
  8. 根据权利要求6所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述介质膜(11)对产生的激光的反射率大于60％。
  9. 根据权利要求6所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述半导体可饱和吸收镜(5)的调制深度为1％至10％。
  10. 根据权利要求6所述的一种重复频率可调的超短谐振腔高重频光纤激光器，其特征在于，所述增益光纤为稀土离子掺杂光纤，掺杂的稀土离子包括铒、镱、铥和钬的一种或几种。
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