WO2023178650A1 - Atomic layer deposition device and method for preparing atomic layer deposition thin film - Google Patents

Abstract

The present invention relates to an atomic layer deposition device and a method for preparing an atomic layer deposition thin film. The atomic layer deposition device provided by the present invention comprises: a reaction chamber, which has a reaction cavity, wherein a first substrate carrying platform and an electrode plate are provided in the reaction cavity, the first substrate carrying platform is used to carry a substrate, and the electrode plate is located above the first substrate carrying platform; and a power supply system, wherein a first electrode thereof is electrically connected to the first substrate carrying platform, a second electrode is electrically connected to the electrode plate, and the power supply system is used to form an electric field between the first substrate carrying platform and the electrode plate so as to guide the growth orientation of a thin film deposited on the substrate.

Description

Atomic layer deposition equipment and preparation method of atomic layer deposition film Technical field

The present invention relates to the field of atomic deposition coating, and more specifically, to an atomic layer deposition equipment and a method for preparing an atomic layer deposition film.

Background technique

Thin film technology is an important part of semiconductor technology and plays an important role in the development of semiconductor technology. Atomic layer deposition (ALD) technology, as a thin film deposition technology, plays an increasingly important role in the field of thin film deposition.

Traditional atomic layer deposition technology is performed under vacuum conditions, and a single ALD cycle can be divided into four steps. First, use an inert carrier gas (such as high-purity N ₂ , Ar, etc.) to pass the first gas phase precursor into the vacuum reaction chamber. The first gas phase precursor chemically reacts with the substrate in the reaction chamber until it is saturated. Due to the ALD reaction Self-limiting, the first gas phase precursor reacts with the active groups contactable on the surface of the substrate to form a layer of reactive groups. Afterwards, an inert gas is used to clean the excess first gas phase precursor and reaction by-products out of the reaction chamber. Then, the second gas phase precursor can be introduced into the reaction chamber in the form of a pulse, and the second gas phase precursor chemically reacts with the accessible reactive groups on the surface of the substrate until saturated. Finally, an inert gas is used to clean the excess second gas phase precursor and reaction by-products out of the reaction chamber, and an ALD cycle ends. Usually an ALD cycle takes 0.5 seconds to several seconds. After one cycle, a single layer of film is deposited on the substrate. By cycling the above-mentioned ALD reaction cycle, the film can be deposited onto the substrate layer by layer. Therefore, precise control of the film thickness can be achieved by controlling the number of ALD cycles, and the film thickness control accuracy can be within the angstrom range.

The thin film formed by atomic layer deposition on the substrate can have different patterns according to requirements, that is, during the deposition process, the thin film preferentially grows in specific areas of the substrate surface, while there is a growth delay in non-specific areas of the substrate surface, which This deposition method is also known as area-selective ALD.

There are currently three main ways to achieve regional selectivity ALD: one is intrinsic selectivity ALD based on the properties of the substrate material itself. This method does not require processing of the substrate surface. The realization of regional selectivity is based on the initialization of the substrate material surface. Differences in nucleation behavior. For example, when there are defects such as grain boundaries and vacancies on the surface of the substrate material, the defective sites will preferentially nucleate. The second type is area-selective ALD that passivates the area. By treating the non-growth area of the substrate to passivate it, the chemical reaction of the gas phase precursor in the non-growth area is suppressed, and the film is only deposited on the untreated area. Specific areas, thereby achieving area selectivity, such as using self-assembled monolayers and inhibitors to deactivate the substrate surface are conventional non-growth area treatments. The third type is region-selective ALD that activates the region. The growth region of the substrate is treated to activate it. The gas-phase precursor is more likely to undergo chemical reactions in the activated growth region, and the film is preferentially deposited in the treated growth region. region to achieve regional selectivity. Growth regions can be activated by treating the substrate through electron beam induced deposition, UV illumination, and co-reactant activation.

In the above-mentioned method of achieving area-selective ALD, during the process of depositing patterned films, the film tends to expand to non-growth areas, affecting the lateral accuracy of nanoscale patterned film growth, which leads to a decrease in the quality of the film.

Contents of the invention

The present invention aims to provide an atomic layer deposition equipment and a preparation method of an atomic layer deposition film, which can improve the deposition rate and film quality of the film.

In one aspect, the present invention provides an atomic layer deposition equipment, including: a reaction chamber, which has a reaction chamber. A first substrate supporting platform and an electrode plate are provided in the reaction chamber. The first substrate supporting platform is used for On the carrier substrate, the electrode plate is located above the first substrate carrier; the power supply system has a first electrode electrically connected to the first substrate carrier, and a second electrode electrically connected to the electrode plate, The power supply system is used to form an electric field between the first substrate carrying platform and the electrode plate to induce a growth orientation for a thin film deposited on the substrate.

The atomic layer deposition equipment provided by the present invention generates an electric field with variable size and direction in the reaction chamber through the first substrate carrier sheet and the electrode plate. Under the influence of factors such as the electric field force and electric dipole moment of the electric field, the gas phase precursor The polar precursor molecules in the body are deflected, and the precursor molecules are induced by the electric field and accelerated to adsorb on the surface of the predetermined area of the substrate to undergo a chemical reaction. The growth orientation of the deposited film is also induced by the electric field, and the deposited film is not easy to form on the substrate. The non-growth area of the surface expands, thereby improving the deposition rate and film quality of patterned films.

Further, the atomic layer deposition equipment further includes a control system, which is electrically connected to the power supply system and used to control the magnitude and direction of the electric field.

Further, at least part of the first substrate carrying platform is formed by sequentially joining non-conductive bodies and conductive bodies in a planar direction according to a preset pattern.

Further, the first substrate carrying platform includes a first carrying region and a second carrying region adjacent in a planar direction, and the conductor includes a first conductor and a second conductor, wherein the first carrying region The area is formed by joining the non-conductive body and the first conductive body according to the preset pattern, and the second carrying area is made of the second conductive body.

Further, the preset pattern includes a grating pattern.

Further, the atomic layer deposition equipment further includes a first air inlet system and a first air extraction system that are communicated with the reaction chamber, wherein the first air inlet system has a gas distribution structure extending into the reaction chamber, so The electrode plate is connected to the lower end of the air distribution structure, and the electrode plate is provided with a plurality of first air equalization holes.

Further, the first air intake system includes a first air intake pipeline connected between the air supply system and the air distribution structure, and the first air intake pipeline is configured with a first heating device.

Further, an air inlet is provided at the upper end of the air distribution structure; an air distribution plate is provided in the air distribution structure, and the air distribution plate is located between the air inlet and the electrode plate, and the The air distribution plate is provided with a plurality of second air equalization holes.

Further, the air distribution plate has a central area opposite to the air inlet, and the second air equalization holes are arranged around the central area.

Further, the diameter of the gas separation plate is smaller than the diameter of the electrode plate.

Further, the air distribution plate is fixed in the air distribution structure through a bracket.

Further, the first exhaust system includes a negative pressure system and a first exhaust pipeline, and the negative pressure system is connected to the reaction chamber through the first exhaust pipeline.

Further, the reaction chamber is equipped with a first temperature adjustment system and a first temperature sensor. The first temperature adjustment system is used to adjust the temperature in the reaction chamber. The first temperature sensor is used to sense the temperature in the reaction chamber.

Further, the atomic layer deposition equipment further includes: an etching chamber, the etching chamber has an etching cavity, and a second substrate carrying platform is provided in the etching cavity; a first transfer mechanism, the first transfer mechanism is used for The substrate on the first substrate carrying stage in the reaction chamber is transferred to the second substrate carrying stage of the etching chamber.

Further, the etching chamber is equipped with a second temperature adjustment system and a second temperature sensor. The second temperature adjustment system is used to adjust the temperature in the etching chamber. The second temperature sensor is used to sense the temperature of the etching chamber. The temperature inside the etching chamber.

Further, the atomic layer deposition equipment further includes a second air inlet system and a second air extraction system that are communicated with the etching chamber.

Further, the second air inlet system includes a second air inlet pipeline connected between the air supply system and the etching chamber, and the second air inlet pipeline is configured with a second heating device.

Further, the second air extraction system includes a negative pressure system and a second air extraction pipeline, and the negative pressure system is connected to the etching chamber through the second air extraction pipeline.

Further, the atomic layer deposition equipment further includes a pre-processing chamber, the pre-processing chamber has a pre-processing chamber, a third substrate carrying platform is provided in the pre-processing chamber; a second transfer mechanism, the first The transfer mechanism is used to transfer the substrate on the third substrate carrying table in the pre-processing chamber to the first substrate carrying table of the reaction chamber.

Further, the pre-treatment chamber is equipped with a third temperature adjustment system and a third temperature sensor. The third temperature adjustment system is used to adjust the temperature in the pre-treatment chamber. The third temperature sensor is used to sense The temperature in the pretreatment chamber.

Further, the atomic layer deposition equipment also includes a third air inlet system and a third air extraction system that are communicated with the pretreatment chamber.

Further, the third air intake system includes a third air intake pipeline connected between the air supply system and the pre-treatment chamber, and the third air intake pipeline is configured with a third heating device.

Further, the third air extraction system includes a negative pressure system and a third air extraction pipeline, and the negative pressure system is connected to the pretreatment chamber through the third air extraction pipeline.

In another aspect, the present invention also provides a method for preparing an atomic layer deposition film. The atomic layer deposition film is prepared using atomic layer deposition equipment. The atomic layer deposition equipment includes a reaction chamber and a power supply system. In the reaction chamber, A first substrate carrying platform and an electrode plate are provided. The electrode plate is located above the first substrate carrying platform. The two poles of the power supply system are respectively connected to the first substrate carrying platform and the electrode plate. ; The preparation method of the atomic layer deposition film includes:

Place the substrate on the first substrate carrying platform;

An electric field is formed between the first substrate carrying platform and the electrode plate through the power supply system;

Inject a first gas phase precursor into the reaction chamber to form a first reactant layer on the substrate;

Inject a first purge gas into the reaction chamber to remove reaction residues in the reaction chamber;

Injecting a second gas phase precursor into the reaction chamber, the second gas phase precursor chemically reacts with the first reactant layer to form a deposited film on the substrate;

A second purge gas is injected into the reaction chamber to remove reaction residues in the reaction chamber.

Further, at least part of the first substrate carrying platform is formed by sequentially joining non-conductive bodies and conductive bodies in a planar direction according to a preset pattern.

Further, the first substrate carrying platform includes a first carrying region and a second carrying region adjacent in a planar direction, and the conductor includes a first conductor and a second conductor, wherein the first carrying region The area is formed by joining the non-conductive body and the first conductive body according to the preset pattern, the second carrying area is made of the second conductive body; the substrate is selectively placed on the First load-bearing area or second load-bearing area.

Further, before placing the substrate on the first substrate carrying platform, the substrate is subjected to patterning preprocessing.

Further, the atomic layer deposition equipment further includes an etching chamber and a first transfer mechanism, the etching chamber has an etching chamber, and a second substrate bearing platform is provided in the etching chamber; wherein, the atomic layer deposition film The preparation method also includes:

After the film deposition in the reaction chamber is completed, the first transfer mechanism transfers the substrate with the deposited film in the reaction chamber to the second substrate carrying table of the etching chamber, and then The deposited film is etched in the etching chamber.

Further, the atomic layer deposition equipment further includes a pre-processing chamber and a second transfer mechanism, the pre-processing chamber has a pre-processing chamber, and a third substrate bearing platform is provided in the pre-processing chamber; the atomic layer The preparation method of the deposited film also includes:

Before placing the substrate on the first substrate carrying table, the substrate is placed on the third substrate carrying table, and the substrate is processed in the pre-processing chamber. Pre-processing: the second transfer mechanism transfers the pre-processed substrate from the pre-processing chamber to the first substrate carrying stage of the reaction chamber.

The method for preparing an atomic layer deposition film provided by the present invention induces the growth orientation of the film by forming an electric field in the reaction chamber, thereby improving the deposition rate and film quality of the film, especially the patterned film.

Description of the drawings

Figure 1 schematically shows a module diagram of an atomic layer deposition apparatus according to an embodiment of the present invention;

Figure 2 schematically shows a control module diagram of an atomic layer deposition equipment according to an embodiment of the present invention;

Figure 3 schematically shows a cross-sectional view of a reaction chamber of an atomic layer deposition equipment according to an embodiment of the present invention;

Figure 4 schematically shows a cross-sectional view of the gas separation structure of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 5 schematically shows a bottom view of an electrode plate of an atomic layer deposition apparatus according to an embodiment of the present invention;

Figure 6 schematically shows the bottom view of the gas separation plate of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 7 schematically shows a perspective view of the first substrate carrying platform and the first temperature control system of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 8 schematically shows the growth state of a thin film deposited on the substrate carried by the first carrying area when no electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 9 schematically shows the growth state of the patterned film deposited on the substrate carried by the first carrying area when an electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 10 schematically shows the growth state of a thin film deposited on the substrate carried by the second carrying area when no electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 11 schematically shows the growth state of a thin film deposited on the substrate carried by the second carrying area when an electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 12 schematically shows the growth state of the patterned film deposited on the patterned substrate carried by the first substrate carrying platform when no electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention;

Figure 13 schematically shows the growth state of the patterned film deposited on the patterned substrate carried by the first substrate carrying platform when an electric field is formed in the reaction chamber of the atomic layer deposition equipment according to an embodiment of the present invention; and

Figure 14 schematically shows a flow chart of a method for preparing an atomic layer deposition film according to an embodiment of the present invention.

Detailed ways

Referring to FIGS. 1 to 7 , a module diagram and a structural diagram of an atomic layer deposition equipment according to an embodiment of the present invention are schematically shown. As shown in the figure, the atomic layer deposition equipment may include a reaction chamber 1 and a power supply system. 2.

The reaction chamber 1 may have a reaction chamber 10. The reaction chamber 10 is provided with a first substrate carrying platform 11 and an electrode plate 12. The first substrate carrying platform 11 is used to carry the substrate 100. The electrode plate 12 is located on the first substrate carrying platform. Above stage 11. Based on known techniques, it can be known that by sequentially injecting different gas phase precursors into the vacuum reaction chamber 10 , a film with an appropriate thickness can be formed on the substrate 100 . In addition, according to the region-selective ALD technology, by pre-processing the substrate 100, a thin film having a predetermined pattern can be formed on the substrate 100.

For example, the power supply system 2 provides two electrodes with opposite polarities, namely a first electrode and a second electrode, through a power supply device. The first electrode is electrically connected to the first substrate supporting platform 11 through a wire 21 , and the second electrode is connected through a wire 22 electrically connected to the electrode plate 12 . The power supply device may include, for example, but is not limited to DC power supply, AC power supply, radio frequency power supply, etc. Therefore, the power supply system 2 can be used to form an electric field between the first substrate carrying platform 11 and the electrode plate 12 . The electric field can induce the growth orientation of the thin film deposited on the substrate 100 and effectively suppress the lateral expansion of the thin film growth. Width (hereinafter also referred to as lateral broadening). In polycrystals, in the absence of electric field induction, each crystal has a crystallographic orientation that is different from that of neighboring crystals. The growth orientation induced by the electric field is preferential growth, and the nanoparticles on the film gather and grow along a specific direction (for example, along the direction of the electric field) to form a film. Specifically, when the gas phase precursor is introduced into the reaction chamber 10, the precursor crystals (nanoparticles, ion particles) are carried into the reaction chamber by the inert carrier gas. At this time, the power supply system 2 is controlled through the first substrate carrier 11 The electrode plate 12 can generate an electric field with variable magnitude and direction in the reaction chamber 10. Under the influence of factors such as the electric field force and galvanic moment of the electric field, the polar precursor crystals in the gas phase precursor are deflected. That is, the precursor crystals are induced by the electric field to accelerate their aggregation and adsorption in a desired orientation (the orientation is, for example, substantially parallel to the direction of the electric field) on the surface of a predetermined area of the substrate 100 to undergo a chemical reaction, thus contributing to rapid deposition of the desired product. Thickness of film. It should be noted that the duration of the electric field may, for example, correspond to but is not limited to the exposure time of the precursor crystal, and may also correspond to other time periods of the film deposition cycle. Since the crystal orientations of the precursor crystals are basically consistent, the structure of the film deposited on the substrate 100 is dense and uniform, and the film does not easily expand to the non-growth area on the surface of the substrate during the growth process, thus improving the efficiency of the patterned film. Deposition rate and film quality. Preferably, the power supply system 2 may be provided with a grounding part for safety protection. In the formation process of deposited films in the prior art, each precursor crystal has a crystallographic orientation different from that of adjacent crystals. The structure of the deposited film is not dense and uniform enough, and it easily expands laterally to the non-growth area on the substrate surface, affecting the Film quality.

It can also be seen from Figure 1 that the atomic layer deposition equipment can also include a control system 3. The control system 3 is connected to the power supply system 2. The control system 3 is used to regulate the power supply system 2 to apply the above-mentioned size in the reaction chamber 10. and an electric field whose direction is variable.

Continuing to refer to FIG. 1 , the reaction chamber 1 may also be configured with a first temperature control system. The first temperature control system is, for example, electrically connected to the control system 3 . The control system 3 regulates the temperature in the reaction chamber 10 through the first temperature control system. In some embodiments, the first temperature control system may include, for example, a heating substrate 61 located in the reaction chamber 10 , and the first substrate carrier 11 is mounted on the heating substrate 61 . The first temperature control system may, for example, use an electric heating wire (eg, Heating coils), resistance heating sheets made of graphite sheets, etc. are used as heating elements to adjust the temperature of the heating substrate 61, thereby heating the entire reaction chamber 10 through heat conduction heating. Since the heating substrate 61 is located inside the reaction chamber 10, the substrate 100 installed on the first substrate carrying platform 11 is not easily affected by factors such as the external environment. In addition, in some embodiments, structures such as an insulating plate and/or a uniform heating plate may be provided between the heating substrate 61 and the first substrate carrying platform 11 as needed. In addition, the reaction chamber 1 can also be equipped with a first temperature sensor (not numbered in the figure). The first temperature sensor (also called a thermocouple) can be disposed at any suitable position in the reaction chamber 10 for sensing the reaction chamber. 10 to monitor the temperature of the reaction chamber 10 in real time. The first temperature control system and the first temperature sensor are, for example, electrically connected to the control system 3. After receiving the temperature information from the first temperature sensor, the control system 3 determines whether it is necessary to adjust the temperature in the reaction chamber 10 through the first temperature control system. temperature. The first temperature control system may include, for example, a first temperature controller. The first temperature controller is used to receive instructions from the control system 3 and then regulate the corresponding heating element.

Continuing to refer to FIG. 1 , the atomic layer deposition equipment may also include a first air inlet system communicated with the reaction chamber 10 . The first air inlet system may have a gas separation structure 41 extending into the reaction chamber 10 , and the electrode plate 12 is connected to the gas distribution structure. 41, and the electrode plate 12 is provided with a plurality of first air equalization holes 120. The first gas inlet system is used to inject gas phase precursors (including precursors and inert carrier gases) into the reaction chamber 10 , and is used to clean the reaction chamber 10 with inert cleaning gases. The first gas inlet system may also include a first gas inlet pipeline 401 connected to the gas distribution structure 41. The gas supply system 400 transports the gas phase precursor or cleaning gas to the gas distribution structure 41 through the first gas inlet pipeline 401. The gas phase precursor Alternatively, the cleaning gas is injected into the reaction chamber 10 through the first gas uniformity hole 120 of the electrode plate 12 to cause a chemical reaction with the surface of the substrate 100 or to clean the reaction chamber 10 . In some embodiments, at least part of the first air intake pipeline 401 may be configured with a first heating device (not shown in the figure) to preheat the gas flowing in the first air intake pipeline 401 . In some embodiments, the air distribution structure 41 may be in the shape of a cylinder or a square barrel, for example.

Continuing to refer to FIG. 1 , the atomic layer deposition equipment may further include a first exhaust system connected to the reaction chamber 10 . The first exhaust system may include, for example, a vacuum exhaust system for removing the reaction residues in the reaction chamber 10 as needed. Purge gas is extracted from the reaction chamber 10 . In addition, the first exhaust system may also include an exhaust gas treatment system, which is used to process the material extracted from the reaction chamber 10 by the vacuum exhaust system. The specific implementation of the first air extraction system may refer to known technology. For example, the first air extraction system may include a negative pressure system (for example, including a vacuum pump) 5 and a first air extraction pipeline 51. See Figure 3. The negative pressure system 5 may include, for example, a vacuum pump. It is connected to the gas outlet 101 of the reaction chamber 10 through the first exhaust pipe 51 .

Referring to Figure 2, in some embodiments, the gas supply system 400 and the negative pressure system 5 can be connected to the aforementioned control system 3 respectively. The control system 3 can control the type and flow rate of the gas output by the gas supply system 400 to the reaction chamber 10. The vacuum degree of the negative pressure system 5 can also be controlled.

Referring to Figure 4, in this embodiment, an air inlet 410 is provided at the upper end of the air distribution structure 41, and an air distribution plate 42 is provided in the air distribution structure 41. The air distribution plate 42 is located between the air inlet 410 and the electrode plate 12. In addition, the air distribution plate 42 is provided with a plurality of second air equalization holes 420 . By arranging the gas distribution plate 42 in the gas distribution structure 41, the gas entering the gas distribution structure 41 from the air inlet 410 passes through the two-layer gas distribution structure 42 and the electrode plate 12 before being ejected, which helps to increase the gas distribution. The uniformity reduces the large impact force caused by the high-speed gas entering the reaction chamber 10 from the first air inlet pipe 401 with a smaller diameter, which is beneficial to improving the quality of the patterned film.

Referring to Figures 4 and 6, in some embodiments, the air distribution plate 42 may have a central area 421 opposite to the air inlet 410. The central area 421 may not have holes, and the second air equalization holes 420 are arranged around the central area 421, as well. That is, the center of the gas distribution plate 42 is sealed and the holes are evenly distributed in the circumferential direction. After the high-speed gas passes through the gas distribution plate 42, the gas flow speed is reduced and the gas is evenly dispersed. Referring to FIG. 5 , the electrode plate 12 is made of conductive material, and the first air equalizing holes 120 on the electrode plate 12 can be evenly spaced to make the air flow distribution more uniform. In some embodiments, the diameter of the gas distribution plate 42 is smaller than the diameter of the electrode plate 12 , and the gas distribution plate 42 can be suspended in the gas distribution structure 41 through the bracket 43 , and the bracket 43 does not affect the flow of gas. Of course, in other embodiments, the air distribution plate 42 can also be fixed in the air distribution structure 41 through other suitable structures.

Referring to FIGS. 7 to 9 , at least part of the first substrate carrying platform 11 may be formed by sequentially joining non-conductive bodies and conductive bodies in a planar direction (transverse direction in FIGS. 8 and 9 ) according to a preset pattern. Referring to FIG. 7 , for example, in some embodiments, the first substrate carrying platform 11 may include a first carrying region 111 and a second carrying region 112 , and the conductive body may include a first conductive body 1112 and a second conductive body, wherein the first The load-bearing area 111 is made of a non-conductive body 1111 (such as polytetrafluoroethylene) and a first conductor 1112 (such as stainless steel material or copper) joined according to a preset pattern. The second load-bearing area 112 is made of a second conductor (such as stainless steel material). or copper), which can increase the versatility of the device. It can be understood that the first conductor 1112 and the second conductor are respectively electrically connected to the first electrode of the power supply system 2 . More specifically, the first conductive body 1112 and the non-conductive body 1111 in the first carrying area 111 of the first substrate carrying platform 11 can be combined to form a grating type pattern or other pattern with a smaller width size, a grating type pattern or other pattern. Sizes include but are not limited to micron level, nano level, etc. When the substrate 100 that has not been subjected to pre-patterning treatment is placed in the first carrying area 111, under the action of an electric field, a deposited film consistent with a grating pattern can be generated on the substrate 100. That is, by providing the first carrying area 111 and combined with the induction effect of the electric field, the substrate 100 does not need to be pre-processed, that is, a thin film with a desired pattern can be deposited on the substrate 100 . The substrate 100 that has been pre-patterned by, for example, a SAMs process can be placed on the second carrying area 112, and under the action of an electric field, a high-quality patterned film can be quickly deposited. In some alternative embodiments, the first substrate carrying platform 11 may be entirely formed by sequentially joining non-conductive bodies 1111 and conductive bodies 1112 in a planar direction according to a preset pattern.

Referring to FIGS. 8 and 9 , the growth of the thin film 300 deposited on the substrate 100 carried on the first carrying area 111 of the first substrate carrying stage 11 is shown when no electric field is formed in the reaction chamber 10 and when the electric field is formed. state. Referring to FIG. 8 , when no electric field is formed between the first substrate supporting platform 11 and the electrode plate 12 , the thin film 300 deposited on the substrate 100 covers the entire substrate 100 . Referring to FIG. 9 , when an electric field, such as shown by the hollow arrow, is formed between the first substrate supporting platform 11 and the electrode plate 12 , a patterned film 300 is deposited on the substrate 100 in an area corresponding to the first conductor 1112 . A hollow is formed on the substrate 100 in a region corresponding to the non-conductive body 1111 . Under the induction of the electric field, the pattern film 300 grows in the height direction H, and the lateral broadening B is suppressed to prevent the pattern film 300 from extending to the area of the non-conductor 1111 .

Referring to FIGS. 10 and 11 , it is shown that the substrate carried on the second carrying area 112 of the first substrate carrying table 11 is shown when no electric field is formed and when an electric field is formed between the first substrate carrying table 11 and the electrode plate 12 . The growth state of the thin film 300 deposited on the sheet 100. Under the same conditions, the lateral broadening B of the film 300 when an electric field is formed between the first substrate supporting platform 11 and the electrode plate 12 is smaller than the lateral broadening B of the film 300 when no electric field is formed between the first substrate supporting platform 11 and the electrode plate 12 Widen B.

Referring to FIGS. 12 and 13 , it is shown that when no electric field is formed and an electric field is formed between the first substrate supporting platform 11 and the electrode plate 12 , the second supporting area 112 of the first substrate supporting platform 11 (or the entire The growth state of the thin film 300 deposited on the patterned substrate 100 carried on the first substrate carrying platform 11 made of conductive material (such as stainless steel or copper). The patterned substrate 100 is, for example, produced by passivating the non-growth area of the ordinary substrate 100 or activating the growth area according to a preset pattern. FIG. 12 shows the growth of the patterned film 300 deposited on the substrate 100 on the first substrate carrying stage 11 when no electric field is formed between the first substrate carrying stage 11 and the electrode plate 12 . While the film 300 grows in layers in the height direction H, it will also expand to a relatively large lateral broadening B in the plane direction, causing the film 300 to expand toward the non-growth area on the surface of the substrate 100 during the growth process. This not only reduces the The deposition rate of patterned films also reduces film quality. Figure 13 shows the growth of the patterned film 300 deposited on the substrate 100 on the first substrate carrying stage 11 when an electric field, such as shown by the hollow arrow, is formed between the first substrate carrying stage 11 and the electrode plate 12. Based on the above situation, it can be understood that under the induction of the electric field, the patterned film 300 is more likely to grow in layers in the height direction H, which inhibits the growth of the patterned film 300 in the lateral broadening direction B, thereby improving the patterned film. Deposition rate and film quality.

Referring again to FIG. 1 , the atomic layer deposition equipment may also include an etching chamber 7 and a first transfer mechanism 81 . The etching chamber has an etching chamber 70, and a second substrate carrying platform 71 is disposed in the etching chamber 70. The first transfer mechanism 81 is used to transfer the substrate 100 on the first substrate carrying stage 11 in the reaction chamber 10 to the second substrate carrying stage 71 of the etching chamber 70 , thereby transferring the substrate 100 on the first substrate carrying stage 11 to the second substrate carrying stage 71 of the etching chamber 70 . The generated deposited film is transferred to the etching chamber 7 for etching. By configuring the etching chamber 7 and the first transfer mechanism 81, the atomic layer deposition equipment realizes process integration of thin film deposition and etching, and optimizes the process steps of thin film production.

In some embodiments, for example, the reaction chamber 1 and the etching chamber 7 are arranged side by side. The reaction chamber 1 can be provided with a first valve 101 , the etching chamber 7 can be provided with a second valve 701 , and the first transfer mechanism 81 can include a robotic arm, for example. , conveyor belt and any suitable transfer mechanism. After the substrate 100 sample deposits a thin film in the reaction chamber 10, the first valve 101 is opened, the first transfer mechanism 81 takes the substrate 100 out of the reaction chamber 10 through the first valve 101, and the first valve 101 is closed. The second valve 701 is opened, and the first transfer mechanism 81 transports the substrate 100 to the second substrate carrying table 71 in the etching chamber 70 through the second valve 701 . The first transfer mechanism 81 is electrically connected to the control system 3 , for example, and the control system 3 is used to control the operation of the first transfer mechanism 81 .

Referring again to FIG. 1 , the etching chamber 7 may also be equipped with a second temperature control system and a second temperature sensor. The second temperature adjustment system is used to adjust the temperature in the etching chamber 70 , and the second temperature sensor is used to sense the temperature in the etching chamber 70 . In some embodiments, the second temperature control system may include, for example, a heating substrate 63 located in the etching chamber 70 , the second substrate carrying platform 71 may be installed on the heating substrate 63 , and the second temperature control system may, for example, use an electric heating wire as the The heating element is used to adjust the temperature of the heating substrate 63, thereby heating the entire etching chamber 70 through heat conduction heating. Since the heating substrate 63 is located inside the etching chamber 70, the substrate 100 installed on the second substrate carrying stage 71 is not easily affected by factors such as the external environment. In addition, the etching chamber 7 can also be configured with a second temperature sensor (not numbered in the figure). The second temperature sensor (also called a thermocouple) can be disposed at any suitable position in the etching chamber 70 for sensing the etching chamber. 70 to monitor the temperature of the etching chamber 70 in real time. The second temperature control system and the second temperature sensor are, for example, electrically connected to the control system 3. After receiving the temperature information from the second temperature sensor, the control system 3 determines whether it is necessary to adjust the temperature in the etching chamber 70 through the second temperature control system. temperature. The second temperature control system may include, for example, a second temperature controller. The second temperature controller is configured to receive instructions from the control system 3 and then regulate the corresponding heating element.

Continuing to refer to FIG. 1 , the atomic layer deposition equipment may further include a second air inlet system communicated with the etching chamber 70 , and the second air inlet system may further include a second air inlet pipeline 402 for supplying air to the etching chamber 70 . The system 400 delivers the gas required for etching into the etching chamber 70 through the second gas inlet pipeline 402 . In some embodiments, the second air intake pipeline 402 may be configured with a second heating device H2 in at least a partial area to preheat the gas flowing in the second air intake pipeline 402 . In some embodiments, the control system 3 can control the gas type and flow rate output by the gas supply system 400 to the etching chamber 70 .

Continuing to refer to FIG. 1 , the atomic layer deposition apparatus may further include a second pumping system in communication with the etching chamber 70 . The second exhaust system includes, for example, a vacuum exhaust system, which is used to extract the remaining material in the etching chamber 70 from the etching chamber 70 as required. In addition, the second exhaust system may also include an exhaust gas treatment system, which is used to process the material extracted from the etching chamber 70 by the vacuum exhaust system. The specific implementation of the second air extraction system may refer to known technology. For example, the first air extraction system may include a second air extraction pipeline 52 and the above-mentioned negative pressure system 5. The negative pressure system 5 may pass through the second air extraction pipeline 52, for example. Communicated with etching chamber 70 .

Referring again to FIG. 1 , the atomic layer deposition equipment may also include a pre-processing chamber 9 and a second transfer mechanism 82 . The pre-processing chamber 9 has a pre-processing chamber 90 , and a third substrate carrying platform 91 is provided in the pre-processing chamber 90 . After placing the substrate 100 on which the thin film is to be deposited on the third substrate bearing stage 91 , the substrate 100 can be pre-processed in the pre-processing chamber 90 (for example, using a self-assembled monolayer, inhibitors, etc. to be adsorbed on the substrate) non-growth area of the substrate to deactivate the surface of the non-growth area of the substrate) to prepare for the subsequent deposition of a patterned film on the growth area of the substrate 100 . The first transfer mechanism 82 is used to transfer the substrate 100 on the third substrate carrying stage 91 in the preprocessing chamber 90 to the first substrate carrying stage 11 of the reaction chamber 10 so that the substrate 100 is in the reaction chamber. Deposit films in 10. By configuring the pre-processing chamber 9 and the second transfer mechanism 82, the process integration of film pre-treatment, deposition and etching is realized, and the process steps of film production are optimized. Since the pretreatment process easily causes greater pollution to the pretreatment chamber 90 , in some embodiments, the pretreatment chamber 90 may have a structure that facilitates open cleaning.

In some embodiments, for example, the pre-processing chamber 9 , the reaction chamber 1 and the etching chamber 7 can be arranged side by side, with the reaction chamber 1 located in the middle of the pre-processing chamber 9 and the etching chamber 7 . The reaction chamber may have a third valve 102, the pretreatment chamber 9 may have a fourth valve 901, and the second transfer mechanism 82 may include any suitable transfer mechanism such as a mechanical arm or a conveyor belt. After the substrate 100 sample is pre-processed in the pre-processing chamber 90, the fourth valve 901 is opened, the second transfer mechanism 82 takes the substrate 100 out of the pre-processing chamber 90 through the fourth valve 901, and the fourth valve 901 is closed. The third valve 102 is opened, and the second transfer mechanism 82 transports the pre-processed substrate 100 to the first substrate carrying platform 11 in the reaction chamber 10 through the third valve 102 . The second transfer mechanism 82 is connected to a control system 3 , for example, and the control system 3 controls the operation of the second transfer mechanism 82 .

Referring again to Figure 1, the pre-treatment chamber 9 can be configured with a third temperature adjustment system and a third temperature sensor. The third temperature adjustment system is used to adjust the temperature in the pre-treatment chamber 90, and the third temperature sensor is used to sense the pre-treatment chamber. Temperature within 90 degrees. In some embodiments, the third temperature control system may include, for example, a heating substrate 65 located in the pre-processing chamber 90 . The third substrate carrying platform 91 may be installed on the heating substrate 65 . The third temperature control system may, for example, use an electric heating wire. It is used as a heating element to adjust the temperature of the heating substrate 65 so as to heat the entire pre-processing chamber 90 through heat conduction heating. Since the heating substrate 65 is located inside the pre-processing chamber 90, the substrate 100 installed on the third substrate carrying platform 91 is not easily affected by external environment and other factors. In addition, the pre-treatment chamber 9 can also be equipped with a third temperature sensor (not numbered in the figure). The third temperature sensor (also called a thermocouple) can be set at any suitable position in the pre-treatment chamber 90 for sensing. The temperature in the pre-treatment chamber 90 is monitored in real time. The third temperature control system and the third temperature sensor are, for example, electrically connected to the control system 3. After receiving the temperature information from the third temperature sensor, the control system 3 determines whether it is necessary to adjust the temperature in the pretreatment chamber 90 through the third temperature control system. temperature. The third temperature control system may include, for example, a third temperature controller. The third temperature controller is configured to receive instructions from the control system 3 and then regulate the corresponding heating element.

Continuing to refer to FIG. 1 , the atomic layer deposition equipment may also include a third air inlet system communicating with the pre-processing chamber 90 , and the third air inlet system may further include a third air inlet pipeline 403 for supplying air to the pre-processing chamber 90 . The gas supply system 400 delivers the gas required for pretreatment to the pretreatment chamber 90 through the third air inlet pipeline 403 . In some embodiments, the third air intake pipeline 403 may be configured with a third heating device H3 in at least a partial area to preheat the gas flowing in the third air intake pipeline 403 .

Continuing to refer to FIG. 1 , the atomic layer deposition equipment may further include a third air extraction system communicated with the pretreatment chamber 90 . The third exhaust system includes, for example, a vacuum exhaust system, which is used to extract the remaining material in the pre-treatment chamber 90 from the pre-treatment chamber 90 as required. In addition, the third exhaust system may also include an exhaust gas treatment system, which is used to process the material extracted from the pre-treatment chamber 90 by the vacuum exhaust system. The specific implementation of the third air extraction system may refer to known technology. For example, the first air extraction system may include a third air extraction pipeline 53 and the above-mentioned negative pressure system 5. The negative pressure system 5 may be passed through the third air extraction pipeline 53, for example. Communicated with the pretreatment chamber 90 . Continuing to refer to FIG. 1 , in some embodiments, the control system 3 can control the gas type and flow rate output by the gas supply system 400 into the front treatment chamber 90 .

In some embodiments, the gas supply system 400 may include, for example, various gas sources and output pipelines (not shown in the figure) for outputting gas in the gas sources downstream. For example, the gas supply system 400 may include a gas phase precursor gas source and a corresponding output pipeline. The output pipeline injects the gas phase precursor output from the gas phase precursor gas source into the first gas inlet pipeline 401. The output pipeline may be provided with an electromagnetic Valves and mass flow controllers, which allow metering of the output gas phase precursor and automatic control of the output pipeline on and off according to a preset program. Electrical equipment such as solenoid valves and mass flow controllers on the output pipeline can be electrically connected to the control system 3. For example, the gas supply system 400 can also include a purge gas source and corresponding output pipelines.

Referring to Figure 10, an embodiment of the present invention also provides a method for preparing an atomic layer deposition film. The atomic layer deposition film can be prepared using the aforementioned atomic layer deposition equipment. When the atomic layer deposition equipment is configured with a reaction chamber 1, the atomic layer deposition film Preparation methods for layer-deposited films include:

S1: Place the substrate 100 on the first substrate carrying platform 11 . Before placing the substrate 100 on the first substrate carrying platform 11, the control system 3 can preheat the reaction chamber 10 through the first temperature adjustment system so that the temperature in the reaction chamber 10 reaches the reaction temperature. After the substrate 100 is placed on the first substrate carrying stage 11, the reaction chamber 10 can be evacuated through the first evacuation system.

S2: An electric field is formed between the first substrate carrying platform and the electrode plate through the power supply system 2. The control system 3 can regulate the direction, size and duration of the electric field through the power supply system 2 according to the characteristics of the thin film to be deposited, so as to induce the growth orientation of the thin film.

S3: Inject the first gas phase precursor into the reaction chamber 10 to form a first reactant layer on the substrate 100 . The first gas phase precursor from the gas supply system 400 is injected into the reaction chamber 10 through the first gas inlet pipe 401 and the gas distribution structure 41 . The two-layer gas uniformity structure of the gas separation structure 41 allows the first gas phase precursor to be blown toward the substrate 100 evenly.

S4: Inject the first purge gas into the reaction chamber 10 to remove reaction residues in the reaction chamber 10 , such as reaction by-products and residues of the first gas phase precursor, so that the reaction by-products remain in the reaction chamber 10 And the first gas phase precursor that does not participate in the chemical reaction is discharged from the reaction chamber 10 .

S5: Inject the second gas phase precursor into the reaction chamber, and the second gas phase precursor chemically reacts with the first reactant layer to form a deposited film on the substrate. The second gas phase precursor from the gas supply system 400 is injected into the reaction chamber 10 through the first gas inlet pipe 401 and the gas distribution structure 41 . The two-layer uniform gas structure of the gas separation structure 41 allows the second gas phase precursor to be uniformly blown toward the substrate 100, and the growth orientation of the film is induced by the electric field.

S6: Inject the second purge gas into the reaction chamber to remove reaction residues in the reaction chamber 10, such as reaction by-products and residues of the second gas phase precursor, so that the reaction by-products remaining in the reaction chamber 10 and The second gas phase precursor that has not participated in the chemical reaction is discharged from the reaction chamber 10 . Steps S3 to S6 can then be repeated to obtain the required film thickness.

With reference to the foregoing, in some embodiments, at least part of the first substrate carrying platform 11 can be sequentially joined by non-conductive bodies and conductive bodies in a planar direction (transverse direction in FIGS. 8 and 9 ) according to a preset pattern. Become. Referring to FIG. 7 , for example, in some embodiments, the first substrate carrying platform 11 may include a first carrying region 111 and a second carrying region 112 , and the conductive body may include a first conductive body 1112 and a second conductive body, wherein the first The load-bearing area 111 is made of a non-conductive body 1111 (such as polytetrafluoroethylene) and a first conductor 1112 (such as stainless steel material or copper) joined according to a preset pattern. The second load-bearing area 112 is made of a second conductor (such as stainless steel material). or red copper), the substrate 100 can be selectively placed in the first bearing area 111 or the second bearing area 112, which can increase the versatility of the device. Of course, in other embodiments, as shown in FIG. 9 , the first substrate carrying platform 11 may be entirely composed of non-conductive bodies 1111 and conductive bodies 1112 sequentially joined in a planar direction according to a preset pattern. The above-mentioned preset pattern is, for example, a grating pattern or other patterns.

With reference to the foregoing, in some embodiments, before placing the substrate 100 on the first substrate carrying platform 11 , the substrate 100 may be patterned pre-processed to generate the patterned film 300 . In this way, the patterned film can be generated without arranging the first substrate supporting platform 11 to be spliced by a non-conductive body and a conductive body. For example, performing patterning pretreatment on the substrate 100 includes passivating the non-growth area of the substrate 100 according to a preset film pattern, or activating the growth area of the substrate 100 .

When the atomic layer deposition equipment is also equipped with an etching chamber 7, after the thin film deposition in the reaction chamber 10 is completed, the control system 3 can control the first transfer mechanism 81 to take the substrate 100 out of the reaction chamber 10. The substrate 100 The thin film deposited thereon is transported by the first transfer mechanism 81 to the second substrate carrying stage 71 in the etching chamber 70 , and the control system can control the second air inlet system and the second exhaust system to affect the thickness of the substrate 100 . The deposited film is etched to further improve the quality of the patterned film and obtain the final patterned film product.

When the atomic layer deposition equipment is also equipped with a pre-processing chamber 9 and the substrate 100 needs to be pre-processed, before placing the substrate 100 on the first substrate carrying platform 11 in the reaction chamber 10, the substrate 100 is first The substrate 100 is placed on the third substrate carrying table 91 in the pre-processing chamber 90 , and the substrate 100 is pre-processed in the pre-processing chamber 90 . After the substrate 100 is pre-processed, the second transfer mechanism 82 transfers the pre-processed substrate 100 from the pre-processing chamber 90 to the first substrate carrying platform 11 of the reaction chamber 10 to perform the aforementioned steps S1 to S6 .

Specifically, during pretreatment, the control system 3 controls the third temperature regulation system to preheat the pretreatment chamber 90 so that the temperature in the pretreatment chamber 90 reaches the temperature required for pretreatment. Then, the substrate 100 is placed on the third substrate carrying platform 91, and the control system 3 evacuates the pre-processing chamber 90 through the third exhaust system. The control system 3 controls the third air inlet system to pass the gas required for pre-processing into the pre-processing chamber 90 to perform pre-processing on the substrate 100 (at this time, the control system 3 can preheat the reaction chamber 10 through the first temperature adjustment system , causing the temperature in the reaction chamber 10 to reach the reaction temperature). After the pre-processing of the substrate 100 is completed, the control system 3 controls the second transfer mechanism 82 to transfer the pre-patterned substrate 100 to the first substrate carrying platform 11 in the preheated reaction chamber 10 .

The technical features of the above-described embodiments can be combined in any way. To simplify the description, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, All should be considered to be within the scope of this manual.

The above-mentioned embodiments only express several implementation modes of the present invention, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the invention. It should be noted that, for those of ordinary skill in the art, several modifications and improvements can be made without departing from the concept of the present invention, and these all belong to the protection scope of the present invention. Therefore, the scope of protection of the patent of the present invention should be determined by the appended claims.

Claims (29)

1. An atomic layer deposition equipment, including:

   Reaction chamber (1), which has a reaction chamber (10). A first substrate bearing platform (11) and an electrode plate (12) are provided in the reaction chamber (10). The first substrate bearing platform (11) ) is used to carry the substrate (100), and the electrode plate (12) is located above the first substrate carrying platform (11);

   A power supply system (2), the first electrode of which is electrically connected to the first substrate carrying platform (11), and the second electrode is electrically connected to the electrode plate (12). The power supply system (2) is used in the An electric field is formed between the first substrate supporting platform (11) and the electrode plate (12) to induce the growth orientation of the film deposited on the substrate (100).
2. The atomic layer deposition equipment according to claim 1, further comprising a control system (3) electrically connected to the power supply system (2) for controlling the magnitude and direction of the electric field. .
3. The atomic layer deposition equipment according to claim 1, wherein at least part of the first substrate carrying platform (11) is formed by sequentially joining non-conductive bodies and conductive bodies in a planar direction according to a preset pattern.
4. The atomic layer deposition apparatus according to claim 3, wherein the first substrate carrying platform (11) includes a first carrying area (111) and a second carrying area (112) adjacent in a planar direction, and the The conductor includes a first conductor (1112) and a second conductor, wherein the first carrying area (111) is composed of the non-conductor (1111) and the first conductor (1112) according to the predetermined It is assumed that the second carrying area (112) is made of the second conductor by pattern bonding.
5. The atomic layer deposition apparatus according to claim 3, wherein the preset pattern includes a grating pattern.
6. The atomic layer deposition equipment according to any one of claims 1 to 5, further comprising a first air inlet system and a first exhaust system communicated with the reaction chamber (10), wherein the first The air inlet system has a gas separation structure (41) extending into the reaction chamber (10), the electrode plate (12) is connected to the lower end of the gas distribution structure (41), and the electrode plate (12) is provided with There are multiple first air equalization holes (120).
7. The atomic layer deposition equipment according to claim 6, wherein the first air inlet system includes a first air inlet pipeline (401) connected between the air supply system (400) and the air distribution structure (41) , the first air intake pipe (401) is equipped with a first heating device.
8. The atomic layer deposition apparatus according to claim 6, wherein

   An air inlet (410) is provided at the upper end of the air distribution structure (41);

   The air separation structure (41) is provided with an air separation plate (42), the air separation plate (42) is located between the air inlet (410) and the electrode plate (12), and the air separation plate (42) The air plate (42) is provided with a plurality of second air equalization holes (420).
9. The atomic layer deposition equipment according to claim 8, wherein the gas distribution plate (42) has a central area (421) opposite to the gas inlet (410), and the second gas uniformity hole (420) surrounds The central area (421) is arranged.
10. The atomic layer deposition apparatus according to claim 8, wherein the diameter of the gas separation plate (42) is smaller than the diameter of the electrode plate (12).
11. The atomic layer deposition equipment according to claim 8, wherein the gas distribution plate (42) is suspended in the gas distribution structure (41) through a bracket (43).
12. The atomic layer deposition equipment according to claim 6, wherein the first exhaust system includes a negative pressure system and a first exhaust pipeline (51), and the negative pressure system passes through the first exhaust pipeline (51) ) is connected with the reaction chamber (10).
13. The atomic layer deposition equipment according to any one of claims 1 to 5, wherein the reaction chamber (1) is configured with a first temperature control system and a first temperature sensor, and the first temperature control system is used to adjust The first temperature sensor is used to sense the temperature in the reaction chamber (10).
14. The atomic layer deposition equipment according to any one of claims 1 to 13, further comprising: an etching chamber (7), the etching chamber has an etching chamber (70), and an etching chamber (70) is provided with The second substrate carrying platform (71); the first transfer mechanism (81), the first transferring mechanism (81) is used to transfer the first substrate carrying platform (81) in the reaction chamber (10) The substrate (100) on 11) is transferred to the second substrate carrying stage (71) of the etching chamber (70).
15. The atomic layer deposition equipment according to claim 14, wherein the etching chamber (7) is configured with a second temperature control system and a second temperature sensor, the second temperature control system is used to adjust the etching chamber (70 ), the second temperature sensor is used to sense the temperature in the etching chamber (70).
16. The atomic layer deposition equipment according to claim 14, further comprising a second air inlet system and a second air extraction system communicated with the etching chamber (70).
17. The atomic layer deposition equipment according to claim 16, wherein the second air inlet system includes a second air inlet pipeline (9) connected between the air supply system (400) and the etching chamber (70), The second air intake pipe (9) is equipped with a second heating device.
18. The atomic layer deposition equipment according to claim 16, wherein the second exhaust system includes a negative pressure system and a second exhaust pipeline (52), and the negative pressure system passes through the second exhaust pipeline (52) ) is connected to the etching chamber (70).
19. The atomic layer deposition equipment according to any one of claims 1 to 18, further comprising: a pre-processing chamber (9) having a pre-processing chamber (90), the pre-processing chamber (90 ) is provided with a third substrate carrying platform (91); a second transfer mechanism (82), the first transfer mechanism (82) is used to transfer the third substrate in the pre-processing chamber (90) The substrate (100) on the substrate carrying platform (91) is transferred to the first substrate carrying platform (11) of the reaction chamber (10).
20. The atomic layer deposition equipment according to claim 19, wherein the pre-processing chamber (9) is equipped with a third temperature control system and a third temperature sensor, the third temperature control system is used to adjust the pre-processing chamber (90), the third temperature sensor is used to sense the temperature in the pre-treatment chamber (90).
21. The atomic layer deposition equipment according to claim 19, further comprising a third air inlet system and a third air extraction system communicated with the pretreatment chamber (90).
22. The atomic layer deposition equipment according to claim 21, wherein the third air inlet system includes a third air inlet pipeline (403) connected between the air supply system (400) and the pre-processing chamber (90) , the third air intake pipe (403) is equipped with a third heating device.
23. The atomic layer deposition equipment according to claim 21, wherein the third air extraction system includes a negative pressure system and a third air extraction pipeline (53), and the negative pressure system passes through the third air extraction pipeline (53). ) communicates with the pretreatment chamber (90).
24. A method for preparing an atomic layer deposition film, wherein the atomic layer deposition film is prepared using atomic layer deposition equipment, the atomic layer deposition equipment includes a reaction chamber (10) and a power supply system (2), the reaction chamber (10 ) is provided with a first substrate carrying platform (11) and an electrode plate (12). The electrode plate (12) is located above the first substrate carrying platform (11). The power supply system (2) The two poles are respectively connected to the first substrate carrying platform (11) and the electrode plate (12); the preparation method of the atomic layer deposition film includes:

    Place the substrate on the first substrate carrying platform;

    An electric field is formed between the first substrate carrying platform and the electrode plate through the power supply system;

    Inject a first gas phase precursor into the reaction chamber to form a first reactant layer on the substrate;

    Inject a first purge gas into the reaction chamber to remove reaction residues in the reaction chamber;

    Injecting a second gas phase precursor into the reaction chamber, the second gas phase precursor chemically reacts with the first reactant layer to form a deposited film on the substrate;

    A second purge gas is injected into the reaction chamber to remove reaction residues in the reaction chamber.
25. The method for preparing an atomic layer deposition film according to claim 24, wherein at least part of the first substrate supporting platform (11) is formed by sequentially joining non-conductive bodies and conductive bodies in a planar direction according to a preset pattern. become.
26. The method for preparing an atomic layer deposition film according to claim 25, wherein,

    The first substrate carrying platform (11) includes a first carrying region (111) and a second carrying region (112) adjacent in the plane direction, and the conductive body includes a first conductive body (1112) and a second conductive body. body, wherein the first carrying area (111) is formed by joining the non-conductive body (1111) and the first conductive body (1112) according to the preset pattern, and the second carrying area (112 ) is made of the second electrical conductor;

    The substrate is selectively placed in the first bearing area (111) or the second bearing area (112).
27. The method for preparing an atomic layer deposition film according to claim 24, wherein the substrate is subjected to patterning pretreatment before the substrate is placed on the first substrate carrying platform.
28. The method for preparing an atomic layer deposition film according to any one of claims 24 to 27, wherein the atomic layer deposition equipment further includes an etching chamber (7) and a first transfer mechanism (81), the etching chamber (7) It has an etching chamber (70), and a second substrate bearing platform (71) is provided in the etching chamber (70); the preparation method of the atomic layer deposition film also includes:

    After the film deposition in the reaction chamber is completed, the first transfer mechanism transfers the substrate with the deposited film in the reaction chamber to the second substrate carrying table of the etching chamber, and then The deposited film is etched in the etching chamber.
29. The method for preparing an atomic layer deposition film according to any one of claims 24 to 28, wherein the atomic layer deposition equipment further includes a pre-treatment chamber (9) and a second transfer mechanism (82), the pre-processing chamber (9) and a second transfer mechanism (82). The processing chamber (9) has a pre-processing chamber (90), and a third substrate carrying platform (91) is provided in the pre-processing chamber (90); the preparation method of the atomic layer deposition film also includes:

    Before placing the substrate on the first substrate carrying table, the substrate is placed on the third substrate carrying table, and the substrate is processed in the pre-processing chamber. Pre-processing: the second transfer mechanism transfers the pre-processed substrate from the pre-processing chamber to the first substrate carrying stage of the reaction chamber.

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