CN115198252B

CN115198252B - Atomic layer deposition equipment and preparation method of atomic layer deposition film

Info

Publication number: CN115198252B
Application number: CN202210303352.9A
Authority: CN
Inventors: 陈蓉; 曹坤; 严谨; 单斌; 李易诚; 胡嘉成
Original assignee: Huazhong University of Science and Technology; HUST Wuxi Research Institute
Current assignee: Huazhong University of Science and Technology; HUST Wuxi Research Institute
Priority date: 2022-03-25
Filing date: 2022-03-25
Publication date: 2024-04-23
Anticipated expiration: 2042-03-25
Also published as: CN115198252A

Abstract

The invention relates to atomic layer deposition equipment and a preparation method of an atomic layer deposition film. The atomic layer deposition equipment provided by the invention comprises: the reaction chamber is provided with a reaction cavity, a first substrate bearing table and an electrode plate are arranged in the reaction cavity, the first substrate bearing table is used for bearing a substrate, and the electrode plate is positioned above the first substrate bearing table; and the power supply system is used for forming an electric field between the first substrate carrying table and the electrode plate so as to induce the growth orientation of a film deposited on the substrate.

Description

Atomic layer deposition equipment and preparation method of atomic layer deposition film

Technical Field

The invention relates to the field of atomic deposition coating, in particular to atomic layer deposition equipment and a preparation method of an atomic layer deposition film.

Background

Thin film technology is an important part of semiconductor technology and plays an important role in the development of semiconductor technology. Atomic Layer Deposition (ALD) plays an increasingly important role as a thin film deposition technique in the thin film deposition field.

Conventional atomic layer deposition techniques are performed under vacuum conditions and a single ALD cycle period can be divided into four steps. Firstly, introducing a first gas phase precursor into a vacuum reaction cavity by using inert carrier gas (such as high-purity N ₂, ar and the like), and enabling the first gas phase precursor to react with a substrate in the reaction cavity until saturation, wherein the first gas phase precursor reacts with active groups which can be contacted with the surface of the substrate due to self-limiting of ALD reaction to form a layer of reactive groups. Thereafter, an inert gas purge is used to carry excess first vapor precursor and reaction byproducts out of the reaction chamber. A second vapor precursor may then be pulsed into the reaction chamber, the second vapor precursor chemically reacting with the accessible reactive groups on the substrate surface until saturated. Finally, an inert gas purge is used to carry excess second vapor precursor and reaction byproducts out of the reaction chamber, ending one ALD cycle. Typically, one ALD cycle takes from 0.5 seconds to several seconds, and a monolayer of film is deposited onto the substrate over one cycle. The thin film can be deposited layer by layer onto the substrate by cycling through the ALD reaction cycles described above. Thus, precise control over film thickness can be achieved by controlling the number of ALD cycles, and film thickness control accuracy can be in the emmi range.

Thin films formed by atomic layer deposition on a substrate may have different patterns as desired, i.e., the thin film preferentially grows in specific areas of the substrate surface and there is a growth delay in non-specific areas of the substrate surface during deposition, a deposition process also known as area selective ALD.

Currently there are three main ways to achieve regioselective ALD: one is inherently selective ALD based on the nature of the substrate material itself, which does not require treatment of the substrate surface, and the regioselectivity is achieved based on differences in the initial nucleation behavior of the substrate material surface, such as preferential nucleation of defective sites in the presence of defects such as grain boundaries, vacancies, etc. in the substrate material surface. The second is regioselective ALD, which passivates regions by treating non-growing regions of the substrate to passivate them, the chemical reaction of vapor phase precursors in the non-growing regions is inhibited, and thin films are deposited only in specific areas that are not treated, thus achieving regioselectivity, e.g., deactivation of the substrate surface using self-assembled monolayers and inhibitors, etc., is a conventional non-growing region treatment. The third is zone selective ALD that activates a zone by treating a growth zone of a substrate, and the vapor phase precursor is more susceptible to chemical reaction in the activated growth zone, thereby preferentially depositing a thin film on the treated growth zone, thereby achieving zone selectivity. The growth region may be activated by treating the substrate by electron beam induced deposition, ultraviolet irradiation, and co-reactant activation.

The above-described manner of implementing region-selective ALD has a tendency for the film to expand toward non-grown regions during deposition of patterned films, affecting the lateral accuracy of the growth of nano-scale patterned films, which results in reduced film quality.

Disclosure of Invention

The invention aims to provide atomic layer deposition equipment and a preparation method of an atomic layer deposition film, which can improve the deposition rate and the film quality of the film.

In one aspect, the present invention provides an atomic layer deposition apparatus comprising: the reaction chamber is provided with a reaction cavity, a first substrate bearing table and an electrode plate are arranged in the reaction cavity, the first substrate bearing table is used for bearing a substrate, and the electrode plate is positioned above the first substrate bearing table; and the power supply system is used for forming an electric field between the first substrate carrying table and the electrode plate so as to induce the growth orientation of a film deposited on the substrate.

According to the atomic layer deposition equipment provided by the invention, the first substrate carrier and the electrode plate generate an electric field with variable size and direction in the reaction cavity, the polar precursor molecules in the gas phase precursor deflect under the influence of factors such as the electric field force of the electric field and the electric dipole moment, the precursor molecules are induced by the electric field to accelerate adsorption on the surface of a preset area of the substrate so as to generate chemical reaction, the growth orientation of a deposited film is also induced by the electric field, and the deposited film is not easy to expand in a non-growth area on the surface of the substrate, so that the deposition rate and the film quality of the patterned film are improved.

Further, the atomic layer deposition device further comprises a control system, wherein the control system is electrically connected with the power supply system and is used for controlling the magnitude and the direction of the electric field.

Further, at least part of the area of the first substrate carrying table is formed by sequentially jointing a non-conductor and a conductor according to a preset pattern in the plane direction.

Further, the first substrate carrying table comprises a first carrying area and a second carrying area which are adjacent in the plane direction, the electric conductor comprises a first electric conductor and a second electric conductor, the first carrying area is formed by bonding the non-electric conductor and the first electric conductor according to the preset pattern, and the second carrying area is formed by the second electric conductor.

Further, the preset pattern includes a grating pattern.

Further, the atomic layer deposition equipment further comprises a first air inlet system and a first air exhaust system which are communicated with the reaction cavity, wherein the first air inlet system is provided with a gas distribution structure which stretches into the reaction cavity, the electrode plate is connected to the lower end of the gas distribution structure, and the electrode plate is provided with a plurality of first air homogenizing holes.

Further, the first air inlet system comprises a first air inlet pipeline connected between the air supply system and the air dividing structure, and the first air inlet pipeline is provided with a first heating device.

Further, the upper end of the gas distribution structure is provided with a gas inlet; the gas distribution structure is internally provided with a gas distribution plate, the gas distribution plate is positioned between the gas inlet and the electrode plate, and the gas distribution plate is provided with a plurality of second uniform gas holes.

Further, the gas distribution plate has a central region opposite to the gas inlet, and the second gas distribution holes are arranged around the central region.

Further, the diameter of the gas separation plate is smaller than the diameter of the electrode plate.

Further, the gas distribution plate is fixed in the gas distribution structure through a bracket.

Further, the first air extraction system comprises a negative pressure system and a first air extraction pipeline, and the negative pressure system is communicated with the reaction cavity through the first air extraction pipeline.

Further, the reaction chamber is provided with a first temperature regulating system for regulating the temperature in the reaction chamber and a first temperature sensor for sensing the temperature in the reaction chamber.

Further, the atomic layer deposition apparatus further includes: an etching chamber having an etching chamber in which a second substrate stage is disposed; the first transfer mechanism is used for transferring the substrate on the first substrate bearing table in the reaction cavity to the second substrate bearing table in the etching cavity.

Further, the etching chamber is provided with a second temperature regulating system for regulating the temperature in the etching chamber and a second temperature sensor for sensing the temperature in the etching chamber.

Further, the atomic layer deposition apparatus further includes a second gas inlet system and a second gas exhaust system in communication with the etching chamber.

Further, the second air inlet system comprises a second air inlet pipeline connected between the air supply system and the etching cavity, and the second air inlet pipeline is provided with a second heating device.

Further, the second air extraction system comprises a negative pressure system and a second air extraction pipeline, and the negative pressure system is communicated with the etching cavity through the second air extraction pipeline.

Further, the atomic layer deposition device further comprises a pretreatment chamber, wherein the pretreatment chamber is provided with a pretreatment cavity, and a third substrate bearing table is arranged in the pretreatment cavity; and the second transfer mechanism is used for transferring the substrate on the third substrate bearing table in the pretreatment cavity to the first substrate bearing table of the reaction cavity.

Further, the pretreatment chamber is provided with a third temperature regulating system for regulating the temperature in the pretreatment chamber and a third temperature sensor for sensing the temperature in the pretreatment chamber.

Further, the atomic layer deposition apparatus further comprises a third gas inlet system and a third gas exhaust system in communication with the pre-processing chamber.

Further, the third air inlet system comprises a third air inlet pipeline connected between the air supply system and the pretreatment cavity, and the third air inlet pipeline is provided with a third heating device.

Further, the third air extraction system comprises a negative pressure system and a third air extraction pipeline, and the negative pressure system is communicated with the pretreatment cavity through the third air extraction pipeline.

In another aspect, the invention further provides a preparation method of an atomic layer deposition film, the atomic layer deposition film is prepared by using an atomic layer deposition device, the atomic layer deposition device comprises a reaction chamber and a power supply system, a first substrate bearing table and an electrode plate are arranged in the reaction chamber, the electrode plate is positioned above the first substrate bearing table, and two poles of the power supply system are respectively connected with the first substrate bearing table and the electrode plate; the preparation method of the atomic layer deposition film comprises the following steps:

placing a substrate on the first substrate stage;

Forming an electric field between the first substrate carrier and the electrode plate by the power system;

injecting a first gaseous precursor into the reaction chamber to form a first reactant layer on the substrate;

Injecting a first purge gas into the reaction chamber to purge reaction residues in the reaction chamber;

injecting a second gas-phase precursor into the reaction cavity, wherein the second gas-phase precursor and the first reactant layer are subjected to chemical reaction to form a deposited film on the substrate;

and injecting a second purge gas into the reaction chamber to remove reaction residues in the reaction chamber.

Further, the first substrate carrying table comprises a first carrying area and a second carrying area which are adjacent in the plane direction, the electric conductor comprises a first electric conductor and a second electric conductor, wherein the first carrying area is formed by bonding the non-electric conductor and the first electric conductor according to the preset pattern, and the second carrying area is formed by the second electric conductor; the substrate is selectively placed in the first bearing area or the second bearing area.

Further, the substrate is subjected to a patterning pretreatment prior to being placed on the first substrate stage.

Further, the atomic layer deposition equipment further comprises an etching chamber and a first transfer mechanism, wherein the etching chamber is provided with an etching cavity, and a second substrate bearing table is arranged in the etching cavity; the preparation method of the atomic layer deposition film further comprises the following steps:

And after the film deposition in the reaction cavity is finished, the first transfer mechanism transfers the substrate with the deposited film in the reaction cavity to the second substrate bearing table of the etching cavity, and then the deposited film is etched in the etching cavity.

Further, the atomic layer deposition equipment further comprises a pretreatment chamber and a second transfer mechanism, wherein the pretreatment chamber is provided with a pretreatment cavity, and a third substrate bearing table is arranged in the pretreatment cavity; the preparation method of the atomic layer deposition film further comprises the following steps:

Before placing the substrate on the first substrate carrying table, placing the substrate on the third substrate carrying table, and pre-treating the substrate in the pre-treatment cavity, wherein the second transfer mechanism transfers the pre-treated substrate from the pre-treatment cavity to the first substrate carrying table of the reaction cavity.

According to the preparation method of the atomic layer deposition film, provided by the invention, the electric field is formed in the reaction cavity to induce the growth orientation of the film, so that the deposition rate and the film quality of the film, especially the patterned film, are improved.

Drawings

Fig. 1 schematically shows a block diagram of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 2 schematically shows a control block diagram of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 3 schematically shows a cross-sectional view of a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 4 schematically shows a cross-sectional view of a gas separation structure of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 5 schematically shows a bottom view of an electrode plate of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 6 schematically shows a bottom view of a gas distribution plate of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 7 schematically illustrates a perspective view of a first substrate stage and a first temperature regulating system of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 8 schematically illustrates a growth state of a thin film deposited on a substrate carried by a first carrying region when an electric field is not formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 9 schematically illustrates a growth state of a patterned thin film deposited on a substrate carried by a first carrying region when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 10 schematically illustrates a growth state of a thin film deposited on a substrate carried by a second carrying region when an electric field is not formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 11 schematically illustrates a growth state of a thin film deposited on a substrate carried by a second carrying region when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 12 schematically illustrates a growth state of a patterned thin film deposited on a patterned substrate carried by a first substrate stage when an electric field is not formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

Fig. 13 schematically illustrates a growth state of a patterned thin film deposited on a patterned substrate carried by a first substrate stage when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention; and

Fig. 14 schematically shows a flowchart of a method of manufacturing an atomic layer deposition film according to an embodiment of the present invention.

Detailed Description

Referring to fig. 1 to 7, block diagrams and block diagrams of an atomic layer deposition apparatus according to an embodiment of the present invention are schematically shown, and as shown, the atomic layer deposition apparatus may include a reaction chamber 1 and a power supply system 2.

The reaction chamber 1 may have a reaction chamber 10, in which a first substrate stage 11 for carrying a substrate 100 and an electrode plate 12 are disposed in the reaction chamber 10, the electrode plate 12 being located above the first substrate stage 11. It is known in the art that a thin film having an appropriate thickness can be formed on the substrate 100 by sequentially injecting different vapor phase precursors into the vacuum reaction chamber 10. In addition, according to the area selective ALD technique, a thin film having a predetermined pattern may be formed on the substrate 100 by performing a pretreatment on the substrate 100.

The power supply system 2 provides, for example, by a power supply device, two electrodes of opposite polarity, a first electrode electrically connected to the first substrate stage 11 by a wire 21 and a second electrode electrically connected to the electrode plate 12 by a wire 22. The power supply means may include, for example, but not limited to, a direct current power supply, an alternating current power supply, a radio frequency power supply, and the like. Thus, an electric field can be formed between the first substrate stage 11 and the electrode plate 12 by the power supply system 2, and the electric field can induce a growth orientation for a thin film deposited on the substrate 100, effectively suppressing a laterally expanding width (hereinafter also referred to as a laterally widening) of the thin film growth. In polycrystals, each crystal has a crystallographic orientation that differs from that of the orthorhombic crystal without electric field induction. The electric field induced growth orientation is preferential growth, and the nanoparticles on the film all accumulate and grow in a specific direction (e.g., along the direction of the electric field) to form a film. Specifically, when the gas-phase precursor is introduced into the reaction chamber 10, the precursor crystal (nanoparticle, ion particle) enters the reaction chamber under the carrying of the inert carrier gas, and at this time, the control power supply system 2 can generate an electric field with variable magnitude and direction in the reaction chamber 10 through the first substrate carrier 11 and the electrode plate 12, and the polar precursor crystal in the gas-phase precursor deflects under the influence of factors such as the electric field force and the electric couple moment of the electric field. That is, the precursor crystals are induced by the electric field to accelerate the aggregation adsorption at the surface of a predetermined region of the substrate 100 in a desired orientation (e.g., a direction substantially parallel to the electric field) to undergo a chemical reaction, thereby facilitating rapid deposition of a thin film of a desired thickness. It should be noted that the duration of the electric field may correspond, for example, but not limited to, the exposure time of the precursor crystal, and may also correspond to other periods of the thin film deposition cycle. Because the crystal orientation of the precursor crystals is substantially uniform, the structure of the film deposited on the substrate 100 is dense and uniform, and the film is not easily spread to a non-growth region of the substrate surface during the growth process, thereby improving the deposition rate and film quality of the patterned film. Preferably, the power supply system 2 may be provided with a ground portion for safety protection. In the process of generating the deposited film in the prior art, each precursor crystal has crystallographic orientation different from that of the adjacent crystal, the structure of the deposited film is not compact and uniform enough, and the deposited film is easy to transversely expand towards a non-growth area on the surface of the substrate, so that the quality of the film is influenced.

As can also be seen from fig. 1, the atomic layer deposition apparatus may further comprise a control system 3, where the control system 3 is connected to the power supply system 2, and the control system 3 is configured to regulate the power supply system 2 so as to apply the electric field with variable magnitude and direction in the reaction chamber 10.

With continued reference to fig. 1, the reaction chamber 1 may also be provided with a first temperature regulating system, which is for example electrically connected to the control system 3, by means of which the control system 3 regulates the temperature in the reaction chamber 10. In some embodiments, the first temperature adjusting system may include, for example, a heating substrate 61 located in the reaction chamber 10, the first substrate stage 11 being mounted on the heating substrate 61, and the first temperature adjusting system may adjust the temperature of the heating substrate 61 using, for example, heating wires (e.g., heating coils), a resistance heating sheet made of graphite sheet, or the like as a heating element, thereby heating the entire reaction chamber 10 by a heat conduction heating manner. Since the heating substrate 61 is located inside the reaction chamber 10, the substrate 100 mounted on the first substrate stage 11 is not easily affected by factors such as the external environment. In addition, in some embodiments, an insulating plate and/or a soaking plate, etc. may be provided between the heating substrate 61 and the first substrate stage 11 as needed. Furthermore, the reaction chamber 1 may be further provided with a first temperature sensor (not shown), which may be also referred to as a thermocouple, disposed at any suitable position in the reaction chamber 10 for sensing the temperature inside the reaction chamber 10 to monitor the temperature of the reaction chamber 10 in real time. The first temperature adjusting system and the first temperature sensor are electrically connected with the control system 3, for example, and after the control system 3 receives the temperature information sent by the first temperature sensor, it is determined whether the temperature in the reaction chamber 10 needs to be adjusted by the first temperature adjusting system. The first temperature regulating system may for example comprise a first temperature controller for receiving the instructions of the control system 3 and then regulating the corresponding heating elements.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a first air inlet system in communication with the reaction chamber 10, the first air inlet system may have a gas distribution structure 41 extending into the reaction chamber 10, the electrode plate 12 is connected to a lower end of the gas distribution structure 41, and the electrode plate 12 is provided with a plurality of first gas distribution holes 120. The first gas inlet system is used to inject a vapor phase precursor (including a precursor and an inert carrier gas) into the reaction chamber 10, and an inert purge gas for purging the reaction chamber 10. The first gas inlet system may further include a first gas inlet pipe 401 connected to the gas distribution structure 41, and the gas supply system 400 may supply a vapor phase precursor or a cleaning gas to the gas distribution structure 41 through the first gas inlet pipe 401, and the vapor phase precursor or the cleaning gas may be injected into the reaction chamber 10 through the first gas distribution holes 120 of the electrode plate 12 to chemically react with the surface of the substrate 100 or clean the reaction chamber 10. In some embodiments, at least a partial region of the first inlet line 401 may be provided with a first heating device (not shown in the figures) to preheat the gas flowing in the first inlet line 401. In some embodiments, the gas distribution structure 41 may be, for example, cylindrical or square barrel shaped, etc.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a first pumping system in communication with the reaction chamber 10, for example, the first pumping system including a vacuum pumping system for pumping the reaction residues, the cleaning gas in the reaction chamber 10 from the reaction chamber 10 according to the need. In addition, the first pumping system may also include an exhaust gas treatment system for treating materials pumped from the reaction chamber 10 by the vacuum pumping system. The specific embodiment of the first pumping system may refer to a known technology, for example, the first pumping system may include a negative pressure system (including a vacuum pump, for example) 5 and a first pumping line 51, see fig. 3, and the negative pressure system 5 communicates with the gas outlet of the reaction chamber 10, for example, through the first pumping line 51.

Referring to fig. 2, in some embodiments, the gas supply system 400 and the negative pressure system 5 may be respectively connected to the aforementioned control system 3, and the control system 3 may control the type and flow rate of the gas output from the gas supply system 400 into the reaction chamber 10, and may also control the vacuum degree of the negative pressure system 5.

Referring to fig. 4, in the present embodiment, an air inlet 410 is formed at an upper end of the air distribution structure 41, an air distribution plate 42 is disposed in the air distribution structure 41, the air distribution plate 42 is located between the air inlet 410 and the electrode plate 12, and a plurality of second air distribution holes 420 are disposed in the air distribution plate 42. By arranging the gas distribution plate 42 in the gas distribution structure 41, the gas entering the gas distribution structure 41 from the gas inlet 410 is sprayed out after passing through the gas distribution plate 42 and the two layers of gas distribution structures of the electrode plate 12, which is favorable for increasing the uniformity of gas distribution, reducing the larger impact force caused by the high-speed gas entering the reaction cavity 10 from the first gas inlet pipeline 401 with smaller diameter, and being favorable for improving the quality of the pattern film.

Referring to fig. 4 and 6, in some embodiments, the gas distribution plate 42 may have a central region 421 opposite to the gas inlet 410, the central region 421 may be not perforated, and the second gas distribution holes 420 are arranged around the central region 421, that is, the center of the gas distribution plate 42 is closed and the holes are uniformly distributed circumferentially, the velocity of the gas flowing is reduced after the high-velocity gas passes through the gas distribution plate 42, and the gas is uniformly dispersed. Referring to fig. 5, the electrode plate 12 is made of conductive material, and the first air holes 120 on the electrode plate 12 may be uniformly distributed at equal intervals to make the air flow distribution more uniform. In some embodiments, the diameter of the gas distribution plate 42 is smaller than the diameter of the electrode plate 12, and the gas distribution plate 42 may be suspended in the gas distribution structure 41 by a bracket 43, the bracket 43 not affecting the flow of gas. Of course, in other embodiments, the gas distribution plate 42 may be secured in the gas distribution structure 41 by other suitable structures.

Referring to fig. 7 to 9, at least a partial region of the first substrate stage 11 may be formed by sequentially bonding a non-conductor and a conductor in a planar direction (a lateral direction in fig. 8 and 9) in a predetermined pattern. Referring to fig. 7, for example, in some embodiments, the first substrate stage 11 may include a first carrying region 111 and a second carrying region 112, the electrical conductors including a first electrical conductor 1112 and a second electrical conductor, wherein the first carrying region 111 is formed by bonding a non-electrical conductor 1111 (e.g., polytetrafluoroethylene) and a first electrical conductor 1112 (e.g., stainless steel material or red copper) in a predetermined pattern, and the second carrying region 112 is formed by a second electrical conductor (e.g., stainless steel material or red copper), which may increase the versatility of the apparatus. It will be appreciated that the first electrical conductor 1112 and the second electrical conductor are each electrically connected to a first electrode of the power supply system 2. More specifically, the first conductive body 1112 and the non-conductive body 1111 of the first carrying region 111 of the first substrate carrying stage 11 may be spliced to form a grating type pattern or other pattern having a smaller width dimension, the dimension of which includes but is not limited to a micrometer scale, a nanometer scale, and the like. When the substrate 100, which is not subjected to the patterning pretreatment, is placed on the first carrying region 111, a deposited film conforming to the grating pattern can be generated on the substrate 100 by the electric field. That is, by providing the first carrying region 111 in combination with the induction of the electric field, the substrate 100 may be not pre-treated, i.e., a thin film having a desired pattern may be deposited on the substrate 100. The substrate 100, which has been pre-patterned by, for example, the SAMs process, may be placed on the second carrier region 112, and a high quality patterned film may be rapidly deposited under the influence of an electric field. In some alternative embodiments, the first substrate stage 11 may be integrally formed by sequentially bonding the non-conductive body 1111 and the conductive body 1112 in a predetermined pattern in the planar direction.

Referring to fig. 8 and 9, a growth state of a thin film 300 deposited on a substrate 100 carried on a first carrying region 111 of a first substrate carrying stage 11 when an electric field is not formed and is formed in a reaction chamber 10 is shown. Referring to fig. 8, in the case where an electric field is not formed by energization between the first substrate stage 11 and the electrode plate 12, a generated thin film 300 is deposited on the substrate 100 to cover the entire substrate 100. Referring to fig. 9, in the case where an electric field, for example, indicated by an open arrow, is formed between the first substrate stage 11 and the electrode plate 12, a patterned thin film 300 is deposited on the substrate 100 in a region corresponding to the first conductive body 1112, and a hollowed-out portion is formed on the substrate 100 in a region corresponding to the non-conductive body 1111. Under the induction of the electric field, the pattern film 300 grows in the height direction H, and the lateral spread B is suppressed to avoid the pattern film 300 from extending toward the region of the non-conductor 1111.

Referring to fig. 10 and 11, a growth state of a thin film 300 deposited on a substrate 100 carried on a second carrying region 112 of a first substrate carrying stage 11 is shown when an electric field is not formed and is formed between the first substrate carrying stage 11 and an electrode plate 12. Under the same conditions, the lateral spread B of the film 300 when an electric field is formed between the first substrate stage 11 and the electrode plate 12 is smaller than the lateral spread B of the film 300 when an electric field is not formed between the first substrate stage 11 and the electrode plate 12.

Referring to fig. 12 and 13, a growth state of a thin film 300 deposited on a patterned substrate 100 carried on a second carrying region 112 of the first substrate carrying stage 11 (or the first substrate carrying stage 11 entirely made of an electric conductor such as stainless steel material or red copper) is shown when an electric field is not formed and is formed between the first substrate carrying stage 11 and the electrode plate 12. The patterned substrate 100 is, for example, manufactured by passivating a non-growth region of the normal substrate 100 according to a predetermined pattern or by activating a growth region. In fig. 12, the growth of the pattern film 300 deposited on the substrate 100 on the first substrate stage 11 is shown when no electric field is formed between the first substrate stage 11 and the electrode plate 12. The thin film 300 grows in a layered manner in the height direction H and also expands a relatively large lateral spread B in the planar direction, which results in the thin film 300 expanding toward the non-growth region of the surface of the substrate 100 during growth, which reduces the deposition rate of the patterned thin film and also reduces the quality of the thin film. Fig. 13 shows the growth of the patterned thin film 300 deposited on the substrate 100 on the first substrate stage 11 when an electric field, for example, indicated by the hollow arrow, is formed between the first substrate stage 11 and the electrode plate 12, and it can be understood from the above that the patterned thin film 300 is easier to grow in a layered manner in the height direction H under the induction of the electric field, and the growth of the patterned thin film 300 in the lateral stretching B direction is suppressed, thereby improving the deposition rate and the film quality of the patterned thin film.

Referring again to fig. 1, the atomic layer deposition apparatus may further include an etching chamber 7 and a first transfer mechanism 81. The etching chamber has an etching chamber 70, and a second substrate stage 71 is disposed in the etching chamber 70. The first transfer mechanism 81 transfers the substrate 100 on the first substrate stage 11 in the reaction chamber 10 to the second substrate stage 71 of the etching chamber 70, thereby transferring the deposited film formed on the substrate 100 to the etching chamber 7 for etching. The atomic layer deposition equipment realizes the process integration of film deposition and etching by configuring the etching chamber 7 and the first transfer mechanism 81, and optimizes the process steps of film production.

In some embodiments, for example, the reaction chamber 1 and the etching chamber 7 are disposed side by side, the reaction chamber 1 may be provided with a first valve 101, the etching chamber 7 may be provided with a second valve 701, and the first transfer mechanism 81 may comprise any suitable transfer mechanism such as a robot arm, a conveyor belt, or the like. After a thin film is deposited on a sample of the substrate 100 in the reaction chamber 10, the first valve 101 is opened, the first transfer mechanism 81 removes the substrate 100 from the reaction chamber 10 through the first valve 101, the first valve 101 is closed, the second valve 701 is opened, and the first transfer mechanism 81 transfers the substrate 100 to the second substrate stage 71 in the etching chamber 70 through the second valve 701. The first transfer mechanism 81 is electrically connected to, for example, the control system 3, and the control system 3 is used to control the operation of the first transfer mechanism 81.

Referring again to fig. 1, the etching chamber 7 may also be configured with a second temperature regulating system and a second temperature sensor. The second temperature regulation system is used to regulate the temperature within the etching chamber 70 and the second temperature sensor is used to sense the temperature within the etching chamber 70. In some embodiments, the second temperature regulating system may include, for example, a heating substrate 63 positioned in the etching chamber 70, and the second substrate stage 71 may be mounted on the heating substrate 63, and the second temperature regulating system may regulate the temperature of the heating substrate 63 using, for example, heating wires as heating elements, thereby heating the entire etching chamber 70 by means of heat conduction heating. Since the heating substrate 63 is located inside the etching chamber 70, the substrate 100 mounted on the second substrate stage 71 is not easily affected by factors such as the external environment. Furthermore, the etching chamber 7 may be further provided with a second temperature sensor (not numbered in the figure), which may be also called a thermocouple, provided at any suitable position in the etching chamber 70 for sensing the temperature inside the etching chamber 70 to monitor the temperature of the etching chamber 70 in real time. The second temperature control system and the second temperature sensor are electrically connected with the control system 3, for example, and after the control system 3 receives the temperature information sent by the second temperature sensor, it is determined whether the temperature in the etching chamber 70 needs to be adjusted by the second temperature control system. The second temperature control system may for example comprise a second temperature control device for receiving instructions from the control system 3 and then controlling the corresponding heating element.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a second gas inlet system in communication with the etching chamber 70, and the second gas inlet system may further include a second gas inlet line 402 for supplying gas to the etching chamber 70, the gas supply system 400 delivering a gas required for etching into the etching chamber 70 through the second gas inlet line 402. In some embodiments, the second gas inlet line 402 may be at least partially configured with a second heating device H2 to preheat the gas flowing in the second gas inlet line 402. In some embodiments, the control system 3 may control the type and flow of gas output by the gas supply system 400 into the etch chamber 70.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a second pumping system in communication with the etch chamber 70. The second pumping system, for example, comprises a vacuum pumping system, for pumping the remaining materials in the etch chamber 70 from the etch chamber 70 as desired. In addition, the second pumping system may also include an exhaust gas treatment system for treating the material pumped from the etch chamber 70 by the vacuum pumping system. The second pumping system may be embodied by reference to known techniques, for example, the first pumping system may include the second pumping line 52 and the negative pressure system 5 described above, the negative pressure system 5 being in communication with the etching chamber 70, for example, through the second pumping line 52.

Referring again to fig. 1, the atomic layer deposition apparatus may further include a pre-chamber 9 and a second transfer mechanism 82. The pre-processing chamber 9 has a pre-processing chamber 90, and a third substrate stage 91 is disposed in the pre-processing chamber 90. After the substrate 100 on which the thin film is to be deposited is placed on the third substrate stage 91, the substrate 100 may be pre-treated (e.g., surface deactivated in non-growth areas of the substrate using self-assembled monolayers, inhibitors, etc.) in the pre-treatment chamber 90 in preparation for subsequent deposition of the patterned thin film on the growth areas of the substrate 100. The second transfer mechanism 82 is used to transfer the substrate 100 on the third substrate stage 91 in the pretreatment chamber 90 to the first substrate stage 11 of the reaction chamber 10, so that the substrate 100 deposits a thin film in the reaction chamber 10. By configuring the pretreatment chamber 9 and the second transfer mechanism 82, the process integration of film pretreatment, deposition and etching is realized, and the process steps of film production are optimized. Because the pretreatment process tends to cause greater contamination of the pretreatment chamber 90, in some embodiments, the pretreatment chamber 90 may have a structure that facilitates open cleaning.

In some embodiments, for example, the pre-treatment chamber 9, the reaction chamber 1 and the etching chamber 7 may be arranged side by side, with the reaction chamber 1 being located in the middle of the pre-treatment chamber 9 and the etching chamber 7. The reaction chamber may have a third valve 102, the pre-processing chamber 9 may have a fourth valve 901, and the second transfer mechanism 82 may comprise any suitable transfer mechanism such as a robotic arm, conveyor belt, or the like. After the sample of the substrate 100 is pre-processed in the pre-processing chamber 90, the fourth valve 901 is opened, the second transfer mechanism 82 takes the substrate 100 out of the pre-processing chamber 90 through the fourth valve 901, the fourth valve 901 is closed, the third valve 102 is opened, and the second transfer mechanism 82 transfers the pre-processed substrate 100 to the first substrate stage 11 in the reaction chamber 10 through the third valve 102. The second transfer mechanism 82 is connected to, for example, a control system 3, and the control system 3 is used to control the operation of the second transfer mechanism 82.

Referring again to fig. 1, the pre-processing chamber 9 may be configured with a third temperature regulating system for regulating the temperature within the pre-processing chamber 90 and a third temperature sensor for sensing the temperature within the pre-processing chamber 90. In some embodiments, a third temperature regulating system may include, for example, a heating substrate 65 positioned in the pre-processing chamber 90, a third substrate stage 91 may be mounted on the heating substrate 65, and the third temperature regulating system may use, for example, heating wires as heating elements to regulate the temperature of the heating substrate 65 so as to heat the entire pre-processing chamber 90 by means of a heat conduction ramp. Since the heating substrate 65 is located inside the pre-processing chamber 90, the substrate 100 mounted on the third substrate stage 91 is not easily affected by factors such as the external environment. In addition, the pre-chamber 9 may be further configured with a third temperature sensor (not numbered), which may also be referred to as a thermocouple, disposed at any suitable location in the pre-chamber 90 for sensing the temperature within the pre-chamber 90 for real-time monitoring of the temperature of the pre-chamber 90. The third temperature control system and the third temperature sensor are electrically connected to the control system 3, for example, and the control system 3 determines whether the temperature in the pretreatment chamber 90 needs to be adjusted by the third temperature control system after receiving the temperature information sent from the third temperature sensor. The third temperature regulating system may for example comprise a third temperature controller for receiving the instructions of the control system 3 and then regulating the corresponding heating elements.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a third gas inlet system in communication with the pre-process chamber 90, and the third gas inlet system may further include a third gas inlet line 403 for supplying gas to the pre-process chamber 90, and the gas supply system 400 may supply the pre-process-required gas into the pre-process chamber 90 through the third gas inlet line 403. In some embodiments, the third gas inlet line 403 may be provided with a third heating device H3 at least in part to preheat the gas flowing in the third gas inlet line 403.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a third pumping system in communication with the pre-process chamber 90. The third pumping system, for example, comprises a vacuum pumping system, for pumping residual materials from the pre-processing chamber 90 as desired. In addition, the third pumping system may also include an exhaust gas treatment system for treating materials pumped from the pre-chamber 90 by the vacuum pumping system. The third pumping system may be embodied by reference to known techniques, for example, the first pumping system may include a third pumping line 53 and the negative pressure system 5 described above, the negative pressure system 5 being in communication with the pre-processing chamber 90, for example, through the third pumping line 53. With continued reference to fig. 1, in some embodiments, the control system 3 may control the type and flow of gas output by the gas supply system 400 into the pre-process chamber 90.

In some embodiments, gas supply system 400 may include, for example, various gas sources and output lines (not shown) for outputting the gas in the gas sources downstream. For example, the gas supply system 400 may include a gas source of the gas precursor and a corresponding output line, where the output line injects the gas precursor output from the gas source into the first gas inlet line 401, and the output line may be provided with a solenoid valve and a mass flow controller, so as to allow metering of the output gas precursor and automatically control on/off of the output line according to a preset program. Electrical devices such as solenoid valves and mass flow controllers on the output lines may be electrically connected to the control system 3, and the gas supply system 400 may also include, for example, a purge gas source and corresponding output lines.

Referring to fig. 10, an embodiment of the present invention further provides a method for preparing an atomic layer deposition film, which may be prepared using the atomic layer deposition apparatus described above, when the atomic layer deposition apparatus is configured with a reaction chamber 1, the method for preparing an atomic layer deposition film includes:

S1: the substrate 100 is placed on the first substrate stage 11. Before placing the substrate 100 on the first substrate stage 11, the control system 3 may preheat the reaction chamber 10 by means of the first temperature regulating system, so that the temperature in the reaction chamber 10 reaches the reaction temperature. After the substrate 100 is placed on the first substrate stage 11, the reaction chamber 10 may be evacuated by the first pumping system.

S2: an electric field is formed between the first substrate stage and the electrode plate by the power supply system 2. The control system 3 can regulate the direction, magnitude and duration of the electric field by the power system 2 to induce the growth orientation of the thin film, depending on the desired properties of the deposited thin film.

S3: a first vapor precursor is injected into the reaction chamber 10 to form a first reactant layer on the substrate 100. A first vapor precursor from the gas supply system 400 is injected into the reaction chamber 10 through a first gas inlet line 401, a gas distribution structure 41. The two-layer gas-homogenizing structure of the gas distribution structure 41 causes the first vapor precursor to be uniformly blown toward the substrate 100.

S4: the first purge gas is injected into the reaction chamber 10 to purge reaction residues in the reaction chamber 10, including, for example, reaction byproducts and residues of the first vapor phase precursor, so that the reaction byproducts remaining in the reaction chamber 10 and the first vapor phase precursor not participating in the chemical reaction are discharged from the reaction chamber 10.

S5: and injecting a second gas-phase precursor into the reaction cavity, and enabling the second gas-phase precursor to react with the first reactant layer chemically to form a deposited film on the substrate. The second vapor precursor from the gas supply system 400 is injected into the reaction chamber 10 through the first gas inlet line 401, the gas distribution structure 41. The two-layer gas-homogenizing structure of the gas-dividing structure 41 causes the second vapor precursor to be uniformly blown toward the substrate 100, and the growth orientation of the thin film is induced by the electric field.

S6: a second purge gas is injected into the reaction chamber to purge reaction residues in the reaction chamber 10, including, for example, reaction byproducts and residues of the second vapor phase precursor, so that the reaction byproducts remaining in the reaction chamber 10 and the second vapor phase precursor not participating in the chemical reaction are discharged from the reaction chamber 10. Steps S3-S6 may then be repeated to obtain the desired film thickness.

In combination with reference to the foregoing, in some embodiments, at least a partial region of the first substrate stage 11 may be formed by sequentially bonding a non-conductor and a conductor in a planar direction (lateral direction in fig. 8 and 9) in a predetermined pattern. Referring to fig. 7, for example, in some embodiments, the first substrate stage 11 may include a first carrying region 111 and a second carrying region 112, and the electrical conductors include a first electrical conductor 1112 and a second electrical conductor, wherein the first carrying region 111 is formed by bonding a non-electrical conductor 1111 (e.g., polytetrafluoroethylene) and a first electrical conductor 1112 (e.g., stainless steel material or red copper) in a predetermined pattern, the second carrying region 112 is formed by a second electrical conductor (e.g., stainless steel material or red copper), and the substrate 100 may be selectively placed in the first carrying region 111 or the second carrying region 112, which may increase versatility of the apparatus. Of course, in other embodiments, as shown in fig. 9, the first substrate stage 11 may be integrally formed by sequentially bonding the non-conductive body 1111 and the conductive body 1112 in a predetermined pattern in the planar direction. The predetermined pattern is, for example, a grating pattern or other patterns.

In some embodiments, the substrate 100 may be subjected to a patterning pretreatment to generate the patterned thin film 300 before the substrate 100 is placed on the first substrate stage 11, in combination with the foregoing. Thus, the first substrate stage 11 is not required to be provided with a splice of a non-conductor and a conductor, and a patterned thin film can be produced. The patterning pretreatment of the substrate 100 is, for example, passivation treatment of a non-growth region of the substrate 100 according to a preset thin film pattern or activation treatment of a growth region of the substrate 100.

When the atomic layer deposition apparatus is further configured with the etching chamber 7, after the film deposition in the reaction chamber 10 is completed, the control system 3 may control the first transfer mechanism 81 to take out the substrate 100 from the reaction chamber 10, the substrate 100 and the film deposited thereon are transferred by the first transfer mechanism 81 to the second substrate carrying table 71 in the etching chamber 70, and the control system may control the second air intake system and the second air exhaust system to etch the deposited film on the substrate 100, so as to further improve the quality of the patterned film and obtain a final patterned film product.

When the atomic layer deposition apparatus is further provided with a pretreatment chamber 9 and the substrate 100 is required to be subjected to pretreatment, the substrate 100 is first placed on the third substrate stage 91 in the pretreatment chamber 90 and the substrate 100 is subjected to pretreatment in the pretreatment chamber 90 before the substrate 100 is placed on the first substrate stage 11 in the reaction chamber 10. After the substrate 100 is pre-processed, the second transfer mechanism 82 transfers the pre-processed substrate 100 from the pre-processing chamber 90 to the first substrate stage 11 of the reaction chamber 10 to perform the aforementioned steps S1 to S6.

Specifically, during the pretreatment, the control system 3 controls the third temperature control system to preheat the pretreatment chamber 90 so that the temperature in the pretreatment chamber 90 reaches the temperature required for the pretreatment. The substrate 100 is then placed on the third substrate stage 91 and the control system 3 evacuates the pre-processing chamber 90 via the third pumping system. The control system 3 controls the third gas inlet system to introduce the gas required for pretreatment into the pretreatment chamber 90 to pretreat the substrate 100 (at this time, the control system 3 may preheat the reaction chamber 10 through the first temperature adjustment system to make the temperature in the reaction chamber 10 reach the reaction temperature). When the pretreatment of the substrate 100 is completed, the control system 3 controls the second transfer mechanism 82 to transfer the substrate 100 after the patterning pretreatment to the first substrate stage 11 in the preheated reaction chamber 10.

The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.

The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims

1. An atomic layer deposition apparatus, comprising:

The reaction chamber (1) is provided with a reaction cavity (10), a first substrate bearing table (11) and an electrode plate (12) are arranged in the reaction cavity (10), the first substrate bearing table (11) is used for bearing a substrate (100), and the electrode plate (12) is positioned above the first substrate bearing table (11);

A power supply system (2) having a first electrode electrically connected to the first substrate stage (11) and a second electrode electrically connected to the electrode plate (12), the power supply system (2) being configured to form an electric field between the first substrate stage (11) and the electrode plate (12) to induce a growth orientation of a thin film deposited on the substrate (100);

at least part of the area of the first substrate carrying table (11) is formed by sequentially jointing a non-conductor and a conductor according to a preset pattern in the plane direction.

2. Atomic layer deposition apparatus according to claim 1, further comprising a control system (3), the control system (3) being electrically connected to the power supply system (2) for controlling the magnitude and direction of the electric field.

3. The atomic layer deposition apparatus according to claim 1, wherein the first substrate stage (11) comprises a first carrying region (111) and a second carrying region (112) adjacent in a planar direction, the electrical conductor comprising a first electrical conductor (1112) and a second electrical conductor, wherein the first carrying region (111) is formed by bonding the non-electrical conductor (1111) and the first electrical conductor (1112) in the predetermined pattern, and the second carrying region (112) is formed by the second electrical conductor.

4. The atomic layer deposition apparatus according to claim 1, wherein the preset pattern comprises a grating pattern.

5. The atomic layer deposition apparatus according to any one of claims 1 to 4, further comprising a first gas inlet system and a first gas exhaust system in communication with the reaction chamber (10), wherein the first gas inlet system has a gas distribution structure (41) extending into the reaction chamber (10), the electrode plate (12) is connected to a lower end of the gas distribution structure (41), and the electrode plate (12) is provided with a plurality of first gas equalizing holes (120).

6. The atomic layer deposition apparatus according to claim 5, wherein the first air inlet system comprises a first air inlet line (401) connected between an air supply system (400) and the gas distribution structure (41), the first air inlet line (401) being configured with a first heating device.

7. The atomic layer deposition apparatus according to claim 5, wherein,

An air inlet (410) is formed in the upper end of the air distribution structure (41);

The gas distribution structure (41) is provided with a gas distribution plate (42), the gas distribution plate (42) is positioned between the gas inlet (410) and the electrode plate (12), and the gas distribution plate (42) is provided with a plurality of second gas distribution holes (420).

8. The atomic layer deposition apparatus according to claim 7, wherein the gas distribution plate (42) has a central region (421) opposite the gas inlet (410), the second gas distribution holes (420) being arranged around the central region (421).

9. The atomic layer deposition apparatus according to claim 7, wherein the diameter of the gas distribution plate (42) is smaller than the diameter of the electrode plate (12).

10. Atomic layer deposition apparatus according to claim 7, wherein the gas distribution plate (42) is suspended in the gas distribution structure (41) by a support (43).

11. Atomic layer deposition apparatus according to claim 5, wherein the first pumping system comprises a negative pressure system and a first pumping line (51), the negative pressure system being in communication with the reaction chamber (10) through the first pumping line (51).

12. Atomic layer deposition apparatus according to any one of claims 1 to 4, wherein the reaction chamber (1) is configured with a first temperature regulating system for regulating the temperature inside the reaction chamber (10) and a first temperature sensor for sensing the temperature inside the reaction chamber (10).

13. The atomic layer deposition apparatus according to any one of claims 1 to 4, further comprising: an etching chamber (7) having an etching chamber (70), the etching chamber (70) having a second substrate stage (71) disposed therein; and a first transfer mechanism (81), wherein the first transfer mechanism (81) is used for transferring a substrate (100) on the first substrate bearing table (11) in the reaction cavity (10) to the second substrate bearing table (71) of the etching cavity (70).

14. Atomic layer deposition apparatus according to claim 13, wherein the etching chamber (7) is provided with a second temperature regulating system for regulating the temperature inside the etching chamber (70) and a second temperature sensor for sensing the temperature inside the etching chamber (70).

15. The atomic layer deposition apparatus according to claim 13, further comprising a second gas inlet system and a second gas exhaust system in communication with the etching chamber (70).

16. The atomic layer deposition apparatus according to claim 15, wherein the second gas inlet system comprises a second gas inlet line (402) connected between a gas supply system (400) and the etching chamber (70), the second gas inlet line (402) being configured with a second heating device.

17. The atomic layer deposition apparatus according to claim 15, wherein the second pumping system comprises a negative pressure system and a second pumping line (52), the negative pressure system being in communication with the etching chamber (70) through the second pumping line (52).

18. The atomic layer deposition apparatus according to any one of claims 1 to 4, further comprising: a pre-processing chamber (9) having a pre-processing chamber (90), the pre-processing chamber (90) having a third substrate stage (91) disposed therein; and a second transfer mechanism (82), wherein the second transfer mechanism (82) is used for transferring the substrate (100) on the third substrate bearing table (91) in the pretreatment cavity (90) to the first substrate bearing table (11) of the reaction cavity (10).

19. Atomic layer deposition apparatus according to claim 18, wherein the pre-processing chamber (9) is configured with a third temperature regulating system for regulating the temperature within the pre-processing chamber (90) and a third temperature sensor for sensing the temperature within the pre-processing chamber (90).

20. The atomic layer deposition apparatus according to claim 18, further comprising a third gas inlet system and a third gas exhaust system in communication with the pre-process chamber (90).

21. Atomic layer deposition apparatus according to claim 20, wherein the third gas inlet system comprises a third gas inlet line (403) connected between a gas supply system (400) and the pre-treatment chamber (90), the third gas inlet line (403) being provided with third heating means.

22. The atomic layer deposition apparatus according to claim 20, wherein the third pumping system comprises a negative pressure system and a third pumping line (53), the negative pressure system being in communication with the pre-processing chamber (90) through the third pumping line (53).

23. The preparation method of the atomic layer deposition film comprises the steps that the atomic layer deposition film is prepared by using an atomic layer deposition device, the atomic layer deposition device comprises a reaction chamber (1) and a power supply system (2), a first substrate bearing table (11) and an electrode plate (12) are arranged in the reaction chamber (1), the electrode plate (12) is positioned above the first substrate bearing table (11), and two poles of the power supply system (2) are respectively connected with the first substrate bearing table (11) and the electrode plate (12); the preparation method of the atomic layer deposition film comprises the following steps:

Placing a substrate on the first substrate carrying table, wherein at least part of the area of the first substrate carrying table (11) is formed by sequentially jointing a non-conductor and a conductor according to a preset pattern in the plane direction;

24. The method for producing an atomic layer deposition film according to claim 23, wherein,

The first substrate carrying table (11) comprises a first carrying area (111) and a second carrying area (112) which are adjacent in the plane direction, wherein the electric conductor comprises a first electric conductor (1112) and a second electric conductor, the first carrying area (111) is formed by bonding the non-electric conductor (1111) and the first electric conductor (1112) according to the preset pattern, and the second carrying area (112) is formed by the second electric conductor;

The substrate is selectively placed in the first carrying area (111) or the second carrying area (112).

25. The method of claim 23, wherein the substrate is subjected to a patterning pretreatment prior to being placed on the first substrate stage.

26. The method of producing an atomic layer deposition film according to any one of claims 23 to 25, wherein the atomic layer deposition apparatus further comprises an etching chamber (7) and a first transfer mechanism (81), the etching chamber (7) having an etching chamber (70), the etching chamber (70) having a second substrate stage (71) provided therein; the preparation method of the atomic layer deposition film further comprises the following steps:

27. The method of preparing an atomic layer deposition film according to any one of claims 23 to 25, wherein the atomic layer deposition apparatus further comprises a pre-processing chamber (9) and a second transfer mechanism (82), the pre-processing chamber (9) having a pre-processing chamber (90), a third substrate stage (91) being provided in the pre-processing chamber (90); the preparation method of the atomic layer deposition film further comprises the following steps: