CN115198252A

CN115198252A - Atomic layer deposition equipment and preparation method of atomic layer deposition film

Info

Publication number: CN115198252A
Application number: CN202210303352.9A
Authority: CN
Inventors: 陈蓉; 曹坤; 严谨; 单斌; 李易诚; 胡嘉成
Original assignee: Huazhong University of Science and Technology; HUST Wuxi Research Institute
Current assignee: Huazhong University of Science and Technology; HUST Wuxi Research Institute
Priority date: 2022-03-25
Filing date: 2022-03-25
Publication date: 2022-10-18
Anticipated expiration: 2042-03-25
Also published as: CN115198252B

Abstract

The invention relates to atomic layer deposition equipment and a preparation method of an atomic layer deposition film. The atomic layer deposition equipment provided by the invention comprises: the device comprises a reaction chamber, a first substrate bearing table and an electrode plate, wherein the reaction chamber is provided with a reaction cavity, the first substrate bearing table is used for bearing a substrate, and the electrode plate is positioned above the first substrate bearing table; and the power supply system is used for forming an electric field between the first substrate bearing table and the electrode plate so as to induce the growth orientation of a film deposited on the substrate.

Description

Atomic layer deposition equipment and preparation method of atomic layer deposition film

Technical Field

The invention relates to the field of atomic deposition coating, in particular to atomic layer deposition equipment and a preparation method of an atomic layer deposition film.

Background

Thin film technology is an important part of semiconductor technology and plays an important role in the development of semiconductor technology. Atomic Layer Deposition (ALD) technology, as a thin film deposition technology, plays an increasingly important role in the field of thin film deposition.

Conventional atomic layer deposition techniques are performed under vacuum conditions and a single ALD cycle period can be divided into four steps. First, with an inert carrier gas (e.g., high purity N) ₂ Ar, etc.) a first gas phase precursor is introduced into a reaction chamber under vacuum, the first gas phase precursor chemically reacts with a substrate in the reaction chamber until saturation, and the first gas phase precursor reacts with reactive groups contactable with the surface of the substrate to form a layer of reactive groups due to the self-limiting nature of the ALD reaction. And then, cleaning by using inert gas to carry the redundant first gas phase precursor and reaction by-products out of the reaction chamber. The second vapor phase precursor may then be pulsed into the reaction chamber, where it chemically reacts with the accessible reactive groups on the substrate surface until saturated. Finally, an inert gas purge is used to carry excess second vapor phase precursor and reaction byproducts out of the reaction chamber and one ALD cycle is complete. Typically, an ALD cycle takes from 0.5 seconds to several seconds, and a single layer of thin film is deposited onto a substrate over one cycle. Cycling through the ALD reaction cycle described above allows thin films to be deposited layer by layer onto a substrate. Therefore, the accurate control of the film thickness can be realized by controlling the ALD cycle number, and the film thickness control accuracy can be in the Hermitian range.

Thin films formed by atomic layer deposition on a substrate may have different patterns according to requirements, i.e., a thin film preferentially grows on a specific region of the substrate surface and a growth delay exists on a non-specific region of the substrate surface during the deposition process, which is also called as a region-selective ALD.

There are currently three main ways to achieve regioselective ALD: one is intrinsic selective ALD based on the properties of the substrate material itself, which does not require processing of the substrate surface, and the regioselectivity is achieved based on the differences in the initial nucleation behavior of the substrate material surface, for example, when there are defects such as grain boundaries, vacancies, etc. on the substrate material surface, the sites where the defects exist will nucleate preferentially. The second method is a regioselective ALD method of passivating regions, in which a non-growth region of a substrate is treated to passivate the non-growth region, chemical reaction of a vapor phase precursor in the non-growth region is suppressed, and a thin film is deposited only in a specific region which is not treated, thereby realizing regioselectivity. The third is regioselective ALD that activates a growth region of a substrate by treating it, where the vapor phase precursor more readily undergoes chemical reaction, and the thin film is thus preferentially deposited on the treated growth region, thereby achieving regioselectivity. The growth region may be activated by treating the substrate by electron beam induced deposition, uv illumination, activation of co-reactants, and the like.

The above-described manner of implementing the regioselective ALD has a tendency of the thin film to expand toward a non-growth region during the deposition of the patterned thin film, affecting the lateral precision of the growth of the nano-scale patterned thin film, which results in the degradation of the quality of the thin film.

Disclosure of Invention

The invention aims to provide atomic layer deposition equipment and a preparation method of an atomic layer deposition film, which can improve the deposition rate and the film quality of the film.

In one aspect, the present invention provides an atomic layer deposition apparatus comprising: the device comprises a reaction chamber, a first substrate bearing table and an electrode plate, wherein the reaction chamber is provided with a reaction cavity, the first substrate bearing table is used for bearing a substrate, and the electrode plate is positioned above the first substrate bearing table; and the power supply system is used for forming an electric field between the first substrate bearing table and the electrode plate so as to induce the growth orientation of a film deposited on the substrate.

According to the atomic layer deposition equipment provided by the invention, the first substrate bearing sheet and the electrode plate generate an electric field with variable size and direction in the reaction cavity, under the influence of factors such as electric field force of the electric field, electric dipole moment and the like, polar precursor molecules in a gas-phase precursor deflect, the precursor molecules are induced by the electric field and accelerated to be adsorbed on the surface of the preset area of the substrate so as to perform chemical reaction, the growth orientation of a deposited film is also induced by the electric field, the deposited film is not easy to expand in a non-growth area on the surface of the substrate, and thus the deposition rate and the film quality of the patterned film are improved.

Further, the atomic layer deposition equipment further comprises a control system, wherein the control system is electrically connected with the power supply system and used for controlling the size and the direction of the electric field.

Further, at least a partial region of the first substrate carrier is formed by sequentially bonding a non-conductor and a conductor in a plane direction according to a predetermined pattern.

Further, the first substrate carrier stage comprises a first carrier region and a second carrier region adjacent in a planar direction, and the electrical conductor comprises a first electrical conductor and a second electrical conductor, wherein the first carrier region is formed by bonding the non-electrical conductor and the first electrical conductor according to the predetermined pattern, and the second carrier region is formed by bonding the second electrical conductor.

Further, the preset pattern includes a grating type pattern.

Further, atomic layer deposition equipment still include with communicating first air intake system of reaction chamber and first air exhaust system, wherein, first air intake system has and stretches into the branch gas structure of reaction chamber, the electrode plate connect in the lower extreme of dividing the gas structure, just the electrode plate is provided with a plurality of even gas pockets of first.

Further, the first air inlet system comprises a first air inlet pipeline connected between the air supply system and the air distribution structure, and the first air inlet pipeline is provided with a first heating device.

Further, the upper end of the gas distribution structure is provided with a gas inlet; the gas distribution structure is internally provided with a gas distribution plate, the gas distribution plate is positioned between the gas inlet and the electrode plate, and the gas distribution plate is provided with a plurality of second uniform gas holes.

Further, the gas distribution plate has a central region opposite to the gas inlet, and the second gas distribution holes are arranged around the central region.

Further, the diameter of the gas distribution plate is smaller than that of the electrode plate.

Further, the gas distribution plate is fixed in the gas distribution structure through a support.

Further, the first air pumping system comprises a negative pressure system and a first air pumping pipeline, and the negative pressure system is communicated with the reaction cavity through the first air pumping pipeline.

Further, the reaction chamber is provided with a first temperature regulating system and a first temperature sensor, wherein the first temperature regulating system is used for regulating the temperature in the reaction cavity, and the first temperature sensor is used for sensing the temperature in the reaction cavity.

Further, the atomic layer deposition apparatus further includes: the etching chamber is provided with an etching cavity, and a second substrate bearing table is arranged in the etching cavity; and the first transfer mechanism is used for transferring the substrate on the first substrate bearing table in the reaction cavity to the second substrate bearing table of the etching cavity.

Further, the etching chamber is configured with a second temperature regulation system for regulating the temperature within the etching chamber and a second temperature sensor for sensing the temperature within the etching chamber.

Further, the atomic layer deposition equipment also comprises a second air inlet system and a second air exhaust system which are communicated with the etching cavity.

Further, the second gas inlet system comprises a second gas inlet pipeline connected between the gas supply system and the etching chamber, and the second gas inlet pipeline is provided with a second heating device.

Further, the second air pumping system comprises a negative pressure system and a second air pumping pipeline, and the negative pressure system is communicated with the etching cavity through the second air pumping pipeline.

Further, the atomic layer deposition equipment also comprises a pretreatment chamber, wherein the pretreatment chamber is provided with a pretreatment cavity, and a third substrate bearing table is arranged in the pretreatment cavity; and the first transfer mechanism is used for transferring the substrate on the third substrate bearing table in the pretreatment cavity to the first substrate bearing table of the reaction cavity.

Further, the pretreatment chamber is provided with a third temperature regulating system and a third temperature sensor, wherein the third temperature regulating system is used for regulating the temperature in the pretreatment cavity, and the third temperature sensor is used for sensing the temperature in the pretreatment cavity.

Furthermore, the atomic layer deposition equipment also comprises a third air inlet system and a third air exhaust system which are communicated with the pretreatment cavity.

Further, the third air inlet system comprises a third air inlet pipeline connected between the air supply system and the pretreatment cavity, and the third air inlet pipeline is provided with a third heating device.

Further, the third air pumping system comprises a negative pressure system and a third air pumping pipeline, and the negative pressure system is communicated with the pretreatment cavity through the third air pumping pipeline.

In another aspect, the invention further provides a method for preparing an atomic layer deposition film, where the atomic layer deposition film is prepared by using an atomic layer deposition device, the atomic layer deposition device includes a reaction chamber and a power supply system, a first substrate carrying table and an electrode plate are arranged in the reaction chamber, the electrode plate is located above the first substrate carrying table, and two poles of the power supply system are respectively connected with the first substrate carrying table and the electrode plate; the preparation method of the atomic layer deposition film comprises the following steps:

placing a substrate on the first substrate carrier;

forming an electric field between the first substrate bearing table and the electrode plate through the power supply system;

injecting a first gas phase precursor into the reaction chamber to form a first reactant layer on the substrate;

injecting a first purge gas into the reaction chamber to remove reaction residues in the reaction chamber;

injecting a second gas-phase precursor into the reaction chamber, wherein the second gas-phase precursor and the first reactant layer are subjected to chemical reaction to form a deposited film on the substrate;

injecting a second purge gas into the reaction chamber to purge reaction residues from the reaction chamber.

Further, at least partial area of the first substrate bearing platform is formed by sequentially jointing the non-conductor and the conductor according to a preset pattern in the plane direction.

Further, the first substrate carrier comprises a first carrier region and a second carrier region adjacent to each other in the planar direction, and the electrical conductor comprises a first electrical conductor and a second electrical conductor, wherein the first carrier region is formed by bonding the non-electrical conductor and the first electrical conductor according to the predetermined pattern, and the second carrier region is formed by bonding the second electrical conductor; the substrate is selectively placed in the first carrying area or the second carrying area.

Further, the substrate is subjected to a patterning pre-treatment prior to placing the substrate on the first substrate carrier.

Further, the atomic layer deposition equipment further comprises an etching chamber and a first transfer mechanism, wherein the etching chamber is provided with an etching cavity, and a second substrate bearing table is arranged in the etching cavity; the preparation method of the atomic layer deposition film further comprises the following steps:

and when the film deposition in the reaction cavity is finished, the first transfer mechanism transfers the substrate with the deposited film in the reaction cavity to the second substrate bearing table of the etching cavity, and then the deposited film is etched in the etching cavity.

Further, the atomic layer deposition equipment further comprises a pretreatment chamber and a second transfer mechanism, wherein the pretreatment chamber is provided with a pretreatment cavity, and a third substrate bearing table is arranged in the pretreatment cavity; the preparation method of the atomic layer deposition film further comprises the following steps:

the second transfer mechanism transfers the pretreated substrate from the pretreatment chamber to the first substrate carrier of the reaction chamber.

According to the preparation method of the atomic layer deposition film, the electric field is formed in the reaction cavity to induce the growth orientation of the film, so that the deposition rate and the quality of the film, particularly the patterned film, are improved.

Drawings

FIG. 1 schematically illustrates a block diagram of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 2 schematically illustrates a control block diagram of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 3 schematically shows a cross-sectional view of a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 4 schematically shows a cross-sectional view of a gas distribution structure of an atomic layer deposition apparatus according to an embodiment of the invention;

fig. 5 schematically illustrates a bottom view of an electrode plate of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 6 schematically illustrates a bottom view of a gas distribution plate of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 7 schematically illustrates a perspective view of a first substrate carrier stage and a first temperature regulation system of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 8 is a schematic diagram illustrating a growth state of a thin film deposited on a substrate carried by a first carrying region when an electric field is not formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

fig. 9 schematically illustrates a growth state of a patterned thin film deposited on a substrate carried by a first carrying region when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the present invention;

FIG. 10 is a schematic diagram illustrating a growth state of a thin film deposited on a substrate carried by a second carrying region when an electric field is not formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 11 is a schematic diagram illustrating a growth state of a thin film deposited on a substrate carried by a second carrying region when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the invention;

FIG. 12 is a schematic diagram illustrating a growth state of a patterned thin film deposited on a patterned substrate carried by a first substrate carrier when no electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the invention;

fig. 13 schematically shows a growth state of a patterned thin film deposited on a patterned substrate carried by a first substrate carrier when an electric field is formed in a reaction chamber of an atomic layer deposition apparatus according to an embodiment of the invention; and

FIG. 14 schematically shows a flow chart of a method for atomic layer deposition thin film fabrication according to an embodiment of the invention.

Detailed Description

Referring to fig. 1 to 7, block diagrams and structural diagrams of an atomic layer deposition apparatus according to an embodiment of the present invention are schematically shown, and as shown, the atomic layer deposition apparatus may include a reaction chamber 1 and a power supply system 2.

The reaction chamber 1 may have a reaction chamber 10, wherein the reaction chamber 10 is provided with a first substrate bearing platform 11 and an electrode plate 12, the first substrate bearing platform 11 is used for bearing the substrate 100, and the electrode plate 12 is positioned above the first substrate bearing platform 11. As is known in the art, a thin film having a suitable thickness can be formed on the substrate 100 by sequentially injecting different gas-phase precursors into the vacuum reaction chamber 10. In addition, according to the regioselective ALD technique, a thin film having a predetermined pattern may be formed on the substrate 100 by pretreating the substrate 100.

The power supply system 2 provides two electrodes with opposite electrode directions, a first electrode and a second electrode, for example, via a power supply device, wherein the first electrode is electrically connected to the first substrate carrier 11 via a conducting wire 21, and the second electrode is electrically connected to the electrode plate 12 via a conducting wire 22. The power supply means may include, for example, but is not limited to, a direct current power supply, an alternating current power supply, a radio frequency power supply, and the like. Thus, an electric field can be formed between the first substrate stage 11 and the electrode plate 12 by the power supply system 2, and the electric field can induce growth orientation of a thin film deposited on the substrate 100, thereby effectively suppressing a lateral spread width (hereinafter, also referred to as lateral spread) of the thin film growth. In polycrystals, each crystal has a crystallographic orientation different from that of the adjacent crystal in the absence of electric field induction. The orientation of the growth induced by the electric field is a preferential growth, and the nanoparticles on the film are gathered and grown in a specific direction (for example, along the direction of the electric field) to form the film. Specifically, when a gas-phase precursor is introduced into the reaction chamber 10, precursor crystals (nanoparticles, ion particles) enter the reaction chamber under the carrying of an inert carrier gas, and at this time, the control power supply system 2 can generate an electric field with variable size and direction in the reaction chamber 10 through the first substrate carrying sheet 11 and the electrode plate 12, and under the influence of factors such as electric field force and electric couple moment of the electric field, polar precursor crystals in the gas-phase precursor deflect. That is, the precursor crystals are induced by the electric field to accelerate the aggregation adsorption (e.g., substantially parallel to the direction of the electric field) in a desired orientation on the surface of the predetermined region of the substrate 100 to cause a chemical reaction, thereby facilitating rapid deposition of a thin film of a desired thickness. It should be noted that the duration of the electric field may correspond, for example and without limitation, to the exposure time of the precursor crystal, and may also correspond to other time periods of the film deposition cycle. Because the crystal orientations of the precursor crystals are basically consistent, the structure of the film deposited on the substrate 100 is compact and uniform, and the film is not easy to expand to a non-growth area on the surface of the substrate in the growth process, so that the deposition rate of the patterned film and the quality of the patterned film are improved. Preferably, the power supply system 2 may be provided with a ground portion for safety protection. In the process of generating the deposited film in the prior art, each precursor crystal has crystallographic orientation different from that of adjacent crystals, the structure of the deposited film is not compact and uniform enough, and the deposited film is easy to laterally expand towards a non-growth area on the surface of a substrate, so that the quality of the film is influenced.

As can be further seen from fig. 1, the atomic layer deposition apparatus may further include a control system 3, the control system 3 is connected to the power system 2, and the control system 3 is configured to regulate the power system 2 to apply the electric field with variable magnitude and direction in the reaction chamber 10.

With continued reference to fig. 1, the reaction chamber 1 may also be provided with a first temperature regulating system, which is for example electrically connected to the control system 3, by means of which the control system 3 regulates the temperature inside the reaction chamber 10. In some embodiments, the first temperature adjustment system may include, for example, a heating substrate 61 disposed in the reaction chamber 10, the first substrate stage 11 being mounted on the heating substrate 61, and the first temperature adjustment system may adjust the temperature of the heating substrate 61 using, for example, heating wires (e.g., heating coils), resistance heating sheets made of graphite sheets, or the like as heating elements, so as to heat the entire reaction chamber 10 by means of heat conduction. Since the heating substrate 61 is located inside the reaction chamber 10, the substrate 100 mounted on the first substrate stage 11 is not easily affected by external environment and the like. In addition, in some embodiments, an insulating plate and/or a heat-homogenizing plate or the like may be disposed between the heating substrate 61 and the first substrate stage 11 as needed. In addition, the reaction chamber 1 may be further configured with a first temperature sensor (not numbered), and the first temperature sensor (also referred to as a thermocouple) may be disposed at any suitable position in the reaction chamber 10 for sensing the temperature in the reaction chamber 10 so as to monitor the temperature in the reaction chamber 10 in real time. The first temperature adjustment system and the first temperature sensor are electrically connected to the control system 3, for example, and after receiving the temperature information sent by the first temperature sensor, the control system 3 determines whether the temperature in the reaction chamber 10 needs to be adjusted by the first temperature adjustment system. The first tempering system may for example comprise a first thermostat for receiving instructions from the control system 3 and then for controlling the corresponding heating element.

With continued reference to fig. 1, the ald apparatus may further include a first gas inlet system communicated with the reaction chamber 10, the first gas inlet system may have a gas distribution structure 41 extending into the reaction chamber 10, the electrode plate 12 is connected to a lower end of the gas distribution structure 41, and the electrode plate 12 is provided with a plurality of first gas homogenizing holes 120. The first gas inlet system is used for injecting a gas phase precursor (including a precursor and an inert carrier gas) into the reaction chamber 10, and an inert purge gas for purging the reaction chamber 10. The first gas inlet system may further include a first gas inlet pipe 401 connected to the gas distribution structure 41, and the gas supply system 400 delivers a gas-phase precursor or a cleaning gas to the gas distribution structure 41 through the first gas inlet pipe 401, and the gas-phase precursor or the cleaning gas is injected into the reaction chamber 10 through the first gas homogenizing holes 120 of the electrode plate 12 to chemically react with the surface of the substrate 100 or clean the reaction chamber 10. In some embodiments, at least a partial region of the first air intake conduit 401 may be provided with a first heating device (not shown in the figures) to preheat the gas flowing in the first air intake conduit 401. In some embodiments, the gas distribution structure 41 may be, for example, cylindrical or square barrel shaped.

With continued reference to fig. 1, the atomic layer deposition apparatus may further include a first pumping system in communication with the reaction chamber 10, for example, the first pumping system includes a vacuum pumping system for pumping the reaction residue and the purge gas in the reaction chamber 10 out of the reaction chamber 10 according to the requirement. In addition, the first pumping system may further include an exhaust gas treatment system for treating the substance pumped from the reaction chamber 10 by the vacuum pumping system. The first pumping system may be implemented according to the known technology, for example, the first pumping system may comprise a negative pressure system (e.g. comprising a vacuum pump) 5 and a first pumping line 51, see fig. 3, wherein the negative pressure system 5 is communicated with the gas outlet 101 of the reaction chamber 10, for example, through the first pumping line 51.

Referring to fig. 2, in some embodiments, the gas supply system 400 and the negative pressure system 5 may be respectively connected to the aforementioned control system 3, and the control system 3 may control the type and flow rate of the gas output from the gas supply system 400 to the reaction chamber 10, and may also control the vacuum degree of the negative pressure system 5.

Referring to fig. 4, in the embodiment, the upper end of the gas distribution structure 41 is provided with a gas inlet 410, a gas distribution plate 42 is disposed in the gas distribution structure 41, the gas distribution plate 42 is located between the gas inlet 410 and the electrode plate 12, and the gas distribution plate 42 is provided with a plurality of second uniform air holes 420. Through set up gas distribution plate 42 in gas distribution structure 41, the gas that gets into gas distribution structure 41 from air inlet 410 spouts behind the even gas structure of gas distribution plate 42, electrode plate 12 two-layer, and this helps increasing gas distribution's homogeneity, has reduced the great impact force that high-speed gas got into reaction chamber 10 from the first inlet line 401 that the diameter is less and has brought, is favorable to promoting the quality of pattern film.

Referring to fig. 4 and 6, in some embodiments, the gas distribution plate 42 may have a central area 421 opposite to the gas inlet 410, the central area 421 may not be provided with holes, the second gas distribution holes 420 are arranged around the central area 421, that is, the center of the gas distribution plate 42 is sealed and the holes are uniformly distributed in the circumferential direction, after the high-speed gas passes through the gas distribution plate 42, the gas flowing speed is reduced, and the gas is uniformly dispersed. Referring to fig. 5, the electrode plate 12 is made of a conductive material, and the first air-distributing holes 120 on the electrode plate 12 can be uniformly distributed at equal intervals, so that the air flow distribution is more uniform. In some embodiments, the diameter of the gas distribution plate 42 is smaller than the diameter of the electrode plate 12, and the gas distribution plate 42 can be suspended in the gas distribution structure 41 by the support 43, and the support 43 does not affect the flow of the gas. Of course, in other embodiments, the air distribution plate 42 may be fixed in the air distribution structure 41 by other suitable structures.

Referring to fig. 7 to 9, at least a partial region of the first substrate carrier 11 may be formed by sequentially joining a non-conductive body and a conductive body in a planar direction (a transverse direction in fig. 8 and 9) according to a predetermined pattern. Referring to fig. 7, for example, in some embodiments, the first substrate carrier 11 may comprise a first carrier region 111 and a second carrier region 112, the electrical conductors comprising a first electrical conductor 1112 and a second electrical conductor, wherein the first carrier region 111 is formed by bonding a non-conductive body 1111 (e.g., teflon) and the first electrical conductor 1112 (e.g., stainless steel material or copper) according to a predetermined pattern, and the second carrier region 112 is formed by bonding a second electrical conductor (e.g., stainless steel material or copper), which may increase the versatility of the apparatus. It will be appreciated that the first electrical conductor 1112 and the second electrical conductor are each electrically connected to a first electrode of the power supply system 2. More specifically, the first electrical conductor 1112 and the non-electrical conductor 1111 of the first carrying region 111 of the first substrate carrying table 11 may be spliced to form a grating-type pattern or other pattern having a small width dimension, the dimension of the grating-type pattern or other pattern including but not limited to micron-scale, nanometer-scale, etc. When the substrate 100 without patterning pretreatment is placed in the first supporting area 111, a deposited film conforming to a grating-type pattern can be formed on the substrate 100 under the action of the electric field. That is, by providing the first carrier region 111, in combination with the induction of the electric field, a thin film having a desired pattern can be deposited on the substrate 100 without performing a pretreatment on the substrate 100. The substrate 100 pre-patterned by, for example, the SAMs process, can be placed on the second carrying region 112, and a high-quality patterned thin film can be rapidly deposited under the action of the electric field. In some alternative embodiments, the first substrate carrier 11 may be integrally formed by sequentially bonding the non-conductor 1111 and the conductor 1112 in a predetermined pattern in a planar direction.

Referring to fig. 8 and 9, there are shown growth states of a thin film 300 deposited on a substrate 100 carried on the first carrying region 111 of the first substrate carrying stage 11 when an electric field is not formed and formed in the reaction chamber 10. Referring to fig. 8, in the case where an electric field is not formed between the first substrate holder 11 and the electrode plate 12, the film 300 deposited on the substrate 100 covers the entire substrate 100. Referring to fig. 9, in the case that an electric field such as that indicated by hollow arrows is formed between the first substrate holder 11 and the electrode plate 12, a patterned film 300 is deposited on the substrate 100 in the region corresponding to the first conductor 1112, and a hollow is formed on the substrate 100 in the region corresponding to the non-conductor 1111. Under the induction of the electric field, the patterned thin film 300 grows in the height direction H, and the lateral broadening B is suppressed to prevent the patterned thin film 300 from extending to the region of the non-conductor 1111.

Referring to fig. 10 and 11, there is shown a growth state of the thin film 300 deposited on the substrate 100 carried on the second carrying region 112 of the first substrate carrier 11 when no electric field is formed and an electric field is formed between the first substrate carrier 11 and the electrode plate 12. Under the same conditions, the lateral spread B of the film 300 when an electric field is formed between the first substrate carrier 11 and the electrode plate 12 is smaller than the lateral spread B of the film 300 when no electric field is formed between the first substrate carrier 11 and the electrode plate 12.

Referring to fig. 12 and 13, there is shown a growth state of a thin film 300 deposited on the patterned substrate 100 carried on the second carrying region 112 of the first substrate carrier 11 (or the first substrate carrier 11 made entirely of an electrically conductive body such as stainless material or red copper) when an electric field is not formed and formed between the first substrate carrier 11 and the electrode plate 12. The patterned substrate 100 is manufactured, for example, by passivating a non-growth region of the general substrate 100 or activating a growth region according to a predetermined pattern. Fig. 12 shows the growth of the patterned film 300 deposited on the substrate 100 on the first substrate holder 11 when no electric field is formed between the first substrate holder 11 and the electrode plate 12. While the film 300 grows in a layered manner in the height direction H, a relatively large lateral broadening B is also developed in the planar direction, which causes the film 300 to be developed toward the non-growth area of the surface of the substrate 100 during the growth process, thus not only reducing the deposition rate of the patterned film, but also reducing the film quality. Fig. 13 shows the growth of the patterned thin film 300 deposited on the substrate 100 on the first substrate holder 11 when an electric field, for example, indicated by hollow arrows, is formed between the first substrate holder 11 and the electrode plate 12, and in combination with the above, it can be understood that the patterned thin film 300 is more easily layered in the height direction H under the induction of the electric field, and the growth of the patterned thin film 300 in the direction of the lateral broadening B is suppressed, thereby improving the deposition rate and the film quality of the patterned thin film.

Referring again to fig. 1, the atomic layer deposition apparatus may further include an etching chamber 7 and a first transfer mechanism 81. The etching chamber has an etching chamber 70, and a second substrate carrier 71 is disposed in the etching chamber 70. The first transfer mechanism 81 is used to transfer the substrate 100 on the first substrate stage 11 in the reaction chamber 10 to the second substrate stage 71 in the etching chamber 70, thereby transferring the deposited film formed on the substrate 100 to the etching chamber 7 for etching. The atomic layer deposition equipment realizes the process integration of film deposition and etching by configuring the etching chamber 7 and the first transfer mechanism 81, and optimizes the process steps of film production.

In some embodiments, for example, the reaction chamber 1 and the etching chamber 7 are arranged side by side, the reaction chamber 1 may be provided with the first valve 101, the etching chamber 7 may be provided with the second valve 701, and the first transferring mechanism 81 may include any suitable transferring mechanism such as a robot arm, a conveyor belt, and the like. After the thin film is deposited on the sample of the substrate 100 in the reaction chamber 10, the first valve 101 is opened, the first transfer mechanism 81 takes the substrate 100 out of the reaction chamber 10 through the first valve 101, the first valve 101 is closed, the second valve 701 is opened, and the first transfer mechanism 81 transfers the substrate 100 to the second substrate stage 71 in the etching chamber 70 through the second valve 701. The first transfer mechanism 81 is electrically connected to the control system 3, for example, and the control system 3 controls the operation of the first transfer mechanism 81.

Referring again to FIG. 1, the etching chamber 7 may also be configured with a second temperature regulation system and a second temperature sensor. A second temperature regulation system is used to regulate the temperature within the etch chamber 70 and a second temperature sensor is used to sense the temperature within the etch chamber 70. In some embodiments, the second temperature regulating system may include, for example, a heating base plate 63 positioned in the etching chamber 70, the second substrate carrier table 71 may be mounted on the heating base plate 63, and the second temperature regulating system may regulate the temperature of the heating base plate 63 using, for example, heating wires as heating elements, thereby heating the entire etching chamber 70 by means of thermal conduction heating. Since the heating substrate 63 is located inside the etching chamber 70, the substrate 100 mounted on the second substrate stage 71 is not easily affected by external environment and the like. In addition, the etching chamber 7 may be further configured with a second temperature sensor (not numbered), which may also be referred to as a thermocouple, disposed at any suitable position in the etching chamber 70 for sensing the temperature in the etching chamber 70 for real-time monitoring of the temperature in the etching chamber 70. The second temperature adjusting system and the second temperature sensor are electrically connected to the control system 3, for example, and the control system 3 determines whether the temperature in the etching chamber 70 needs to be adjusted by the second temperature adjusting system after receiving the temperature information sent by the second temperature sensor. The second tempering system may for example comprise a second thermostat for receiving instructions from the control system 3 and then for controlling the corresponding heating element.

With continued reference to fig. 1, the atomic layer deposition apparatus may further comprise a second gas inlet system in communication with the etching chamber 70, the second gas inlet system may further comprise a second gas inlet pipe 402 for supplying gas to the etching chamber 70, and the gas supply system 400 may deliver gas required for etching to the etching chamber 70 through the second gas inlet pipe 402. In some embodiments, the second air intake conduit 402 may be at least partially configured with a second heating device H2 to preheat the gas flowing in the second air intake conduit 402. In some embodiments, the control system 3 may control the type and flow of gases output by the gas supply system 400 into the etch chamber 70.

With continued reference to FIG. 1, the atomic layer deposition apparatus can further include a second pumping system in communication with the etch chamber 70. The second pumping system comprises, for example, a vacuum pumping system for pumping the remaining material in the etch chamber 70 from the etch chamber 70 as needed. In addition, the second pumping system can also include an exhaust gas treatment system for treating the species pumped from the etching chamber 70 by the vacuum pumping system. The second pumping system may be implemented according to known techniques, for example, the first pumping system may include the second pumping line 52 and the negative pressure system 5 described above, and the negative pressure system 5 is in communication with the etching chamber 70, for example, via the second pumping line 52.

Referring to fig. 1 again, the atomic layer deposition apparatus may further include a pre-treatment chamber 9 and a second transfer mechanism 82. The pretreatment chamber 9 has a pretreatment chamber 90, and a third substrate stage 91 is provided in the pretreatment chamber 90. After the substrate 100 to be deposited with a thin film is placed on the third substrate holder 91, the substrate 100 may be pre-processed in the pre-processing chamber 90 (e.g., using a self-assembled monolayer, an inhibitor, etc. to adsorb onto the non-growth areas of the substrate and deactivate the surface of the non-growth areas of the substrate) in preparation for subsequent deposition of a patterned thin film on the growth areas of the substrate 100. The first transfer mechanism 82 is used for transferring the substrate 100 on the third substrate carrier 91 in the pre-processing chamber 90 to the first substrate carrier 11 of the reaction chamber 10, so that the substrate 100 deposits a film in the reaction chamber 10. By configuring the pretreatment chamber 9 and the second transfer mechanism 82, the process integration of film pretreatment, deposition and etching is realized, and the process steps of film production are optimized. Since the pre-treatment process is prone to cause significant contamination of the pre-treatment chamber 90, in some embodiments, the pre-treatment chamber 90 may have a configuration that facilitates open cleaning.

In some embodiments, for example, the pre-treatment chamber 9, the reaction chamber 1 and the etching chamber 7 may be arranged side by side, with the reaction chamber 1 being located intermediate the pre-treatment chamber 9 and the etching chamber 7. The reaction chamber may have a third valve 102, the pretreatment chamber 9 may have a fourth valve 901, and the second transfer mechanism 82 may include any suitable transfer mechanism such as a robot, a conveyor, and the like. When the substrate 100 is pre-processed in the pre-processing chamber 90, the fourth valve 901 is opened, the second transfer mechanism 82 takes the substrate 100 out of the pre-processing chamber 90 through the fourth valve 901, the fourth valve 901 is closed, the third valve 102 is opened, and the second transfer mechanism 82 transfers the pre-processed substrate 100 to the first substrate stage 11 in the reaction chamber 10 through the third valve 102. The second transfer mechanism 82 is connected to the control system 3, for example, and the control system 3 controls the operation of the second transfer mechanism 82.

Referring again to fig. 1, the pretreatment chamber 9 may be configured with a third temperature regulating system for regulating the temperature inside the pretreatment chamber 90, and a third temperature sensor for sensing the temperature inside the pretreatment chamber 90. In some embodiments, the third temperature adjustment system may include, for example, a heating base plate 65 disposed in the pre-treatment chamber 90, the third substrate stage 91 may be mounted on the heating base plate 65, and the third temperature adjustment system may adjust the temperature of the heating base plate 65 using, for example, heating wires as heating elements, so as to heat the entire pre-treatment chamber 90 by way of thermal conduction heating. Since the heating substrate 65 is located inside the pretreatment chamber 90, the substrate 100 mounted on the third substrate stage 91 is not easily affected by external environment and the like. In addition, the pre-treatment chamber 9 may be further configured with a third temperature sensor (not numbered), and the third temperature sensor (also referred to as a thermocouple) may be disposed at any suitable position in the pre-treatment chamber 90 for sensing the temperature in the pre-treatment chamber 90 to monitor the temperature in the pre-treatment chamber 90 in real time. The third temperature adjustment system and the third temperature sensor are electrically connected to the control system 3, for example, and the control system 3 determines whether the temperature in the pretreatment chamber 90 needs to be adjusted by the third temperature adjustment system after receiving the temperature information sent by the third temperature sensor. The third temperature regulation system may for example comprise a third temperature controller for receiving instructions from the control system 3 and then regulating the corresponding heating element.

With continued reference to fig. 1, the ald apparatus may further include a third gas inlet system in communication with the pretreatment chamber 90, and the third gas inlet system may further include a third gas inlet pipe 403 for supplying gas to the pretreatment chamber 90, wherein the gas supply system 400 delivers gas required for pretreatment to the pretreatment chamber 90 through the third gas inlet pipe 403. In some embodiments, the third gas inlet line 403 may be provided, at least in sections, with a third heating device H3 for preheating the gas flowing in the third gas inlet line 403.

With continued reference to FIG. 1, the atomic layer deposition apparatus may further include a third pumping system in communication with the pre-treatment chamber 90. The third pumping system includes, for example, a vacuum pumping system for pumping the residual material in the pretreatment chamber 90 out of the pretreatment chamber 90 according to requirements. In addition, the third pumping system may further include an exhaust gas treatment system for treating the material pumped from the front processing chamber 90 by the vacuum pumping system. The third air pumping system can be implemented according to the known technology, for example, the first air pumping system can include the third air pumping pipeline 53 and the negative pressure system 5, and the negative pressure system 5 is communicated with the pretreatment chamber 90 through the third air pumping pipeline 53. With continued reference to fig. 1, in some embodiments, the control system 3 may control the type and flow of gas output by the gas supply system 400 into the pre-processing chamber 90.

In some embodiments, for example, the gas supply system 400 may include various gas sources and an output line (not shown) for outputting gas from the gas sources downstream. For example, the gas supply system 400 may include a gas source of a gas-phase precursor and a corresponding output line, the output line injects the gas-phase precursor outputted from the gas source of the gas-phase precursor into the first gas inlet line 401, and the output line may be provided with a solenoid valve and a mass flow controller, which allow the outputted gas-phase precursor to be metered and the on/off of the output line to be automatically controlled according to a preset program. Electrical equipment such as solenoid valves and mass flow controllers on the output lines may be electrically connected to the control system 3, and the gas supply system 400 may further include, for example, a source of purge gas and corresponding output lines.

Referring to fig. 10, an embodiment of the present invention further provides a method for preparing an atomic layer deposition film, where the atomic layer deposition film can be prepared by using the atomic layer deposition apparatus described above, and when the atomic layer deposition apparatus is provided with a reaction chamber 1, the method for preparing the atomic layer deposition film includes:

s1: the substrate 100 is placed on the first substrate carrier 11. Before the substrate 100 is placed on the first substrate holder 11, the control system 3 may preheat the reaction chamber 10 through the first temperature adjustment system, so that the temperature in the reaction chamber 10 reaches the reaction temperature. After the substrate 100 is placed on the first substrate holder 11, the reaction chamber 10 may be evacuated by the first pumping system.

S2: an electric field is formed between the first substrate carrier and the electrode plate by means of the power supply system 2. The control system 3 can regulate and control the direction, the magnitude and the duration of the electric field through the power supply system 2 according to the characteristics of the thin film to be deposited so as to induce the growth orientation of the thin film.

S3: a first gas phase precursor is injected into the reaction chamber 10 to form a first reactant layer on the substrate 100. The first gas precursor from the gas supply system 400 is injected into the reaction chamber 10 through the first gas inlet pipe 401 and the gas distribution structure 41. The two-layer gas distributing structure of the gas distributing structure 41 enables the first gas phase precursor to be uniformly blown toward the substrate 100.

S4: the first purge gas is injected into the reaction chamber 10 to purge reaction residues, such as residues including reaction byproducts and the first gas phase precursor, in the reaction chamber 10, so that the reaction byproducts remaining in the reaction chamber 10 and the first gas phase precursor not participating in the chemical reaction are exhausted from the reaction chamber 10.

S5: and injecting a second gas-phase precursor into the reaction cavity, and carrying out chemical reaction on the second gas-phase precursor and the first reactant layer to form a deposited film on the substrate. The second gas-phase precursor from the gas supply system 400 is injected into the reaction chamber 10 through the first gas inlet pipe 401 and the gas distribution structure 41. The two-layer gas-homogenizing structure of the gas-distributing structure 41 makes the second gas-phase precursor uniformly blown toward the substrate 100, and the growth orientation of the thin film is induced by the electric field.

S6: a second purge gas is injected into the reaction chamber to purge reaction residues, such as residues including reaction by-products and the second vapor-phase precursor, from the reaction chamber 10, so that the reaction by-products remaining in the reaction chamber 10 and the second vapor-phase precursor not participating in the chemical reaction are exhausted from the reaction chamber 10. Steps S3 to S6 may then be repeated to obtain the desired film thickness.

With reference to the foregoing, in some embodiments, at least a partial region of the first substrate carrier 11 may be formed by sequentially joining non-conductive and conductive bodies in a planar direction (lateral direction in fig. 8 and 9) according to a predetermined pattern. Referring to fig. 7, for example, in some embodiments, the first substrate carrier 11 may comprise a first carrier region 111 and a second carrier region 112, the electrical conductors comprising a first electrical conductor 1112 and a second electrical conductor, wherein the first carrier region 111 is formed by bonding a non-conductive body 1111 (e.g., teflon) and the first electrical conductor 1112 (e.g., stainless steel or copper) according to a predetermined pattern, and the second carrier region 112 is formed by bonding a second electrical conductor (e.g., stainless steel or copper), and the substrate 100 may be selectively placed on the first carrier region 111 or the second carrier region 112, which may increase the versatility of the apparatus. Of course, in other embodiments, as shown in fig. 9, the first substrate carrier 11 may be integrally formed by sequentially bonding the non-conductor 1111 and the conductor 1112 in a predetermined pattern in a planar direction. The predetermined pattern is, for example, a grating pattern or other patterns.

Referring to the foregoing, in some embodiments, the substrate 100 may be subjected to a patterning pretreatment to generate the patterned thin film 300 before the substrate 100 is placed on the first substrate carrier 11. In this way, the patterned film can be produced without the first substrate carrier 11 being arranged to be a splice of a non-conductive and a conductive body. The patterning pretreatment of the substrate 100 is, for example, a passivation treatment of a non-growth area of the substrate 100 or an activation treatment of a growth area of the substrate 100 according to a predetermined thin film pattern.

When the atomic layer deposition apparatus is further provided with the etching chamber 7, after the deposition of the thin film in the reaction chamber 10 is finished, the control system 3 may control the first transfer mechanism 81 to take the substrate 100 out of the reaction chamber 10, the substrate 100 and the thin film deposited thereon are conveyed onto the second substrate carrying table 71 in the etching chamber 70 by the first transfer mechanism 81, and the control system may control the second air intake system and the second air exhaust system to etch the deposited thin film on the substrate 100, so as to further improve the quality of the patterned thin film, and obtain a final patterned thin film product.

When the ald apparatus is further configured with a pre-treatment chamber 9 and the substrate 100 needs to be pre-treated, the substrate 100 is first placed on the third substrate carrier 91 in the pre-treatment chamber 90 and the substrate 100 is pre-treated in the pre-treatment chamber 90 before the substrate 100 is placed on the first substrate carrier 11 in the reaction chamber 10. After the substrate 100 is pretreated, the second transfer mechanism 82 transfers the pretreated substrate 100 from the pretreatment chamber 90 to the first substrate stage 11 of the reaction chamber 10, and the above steps S1 to S6 are performed.

Specifically, when the pretreatment is performed, the control system 3 controls the third temperature adjustment system to preheat the pretreatment chamber 90 so that the temperature in the pretreatment chamber 90 reaches the temperature required for the pretreatment. Then, the substrate 100 is placed on the third substrate holder 91, and the control system 3 evacuates the pretreatment chamber 90 by the third evacuation system. The control system 3 controls the third gas inlet system to introduce gas required for pretreatment into the pretreatment chamber 90 to pretreat the substrate 100 (at this time, the control system 3 may preheat the reaction chamber 10 through the first temperature regulating system, so that the temperature in the reaction chamber 10 reaches the reaction temperature). After the pretreatment of the substrate 100 is completed, the control system 3 controls the second transfer mechanism 82 to transfer the substrate 100 after the patterning pretreatment to the first substrate stage 11 in the preheated reaction chamber 10.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims

1. An atomic layer deposition apparatus, comprising:

the reaction chamber (1) is provided with a reaction cavity (10), a first substrate bearing platform (11) and an electrode plate (12) are arranged in the reaction cavity (10), the first substrate bearing platform (11) is used for bearing a substrate (100), and the electrode plate (12) is positioned above the first substrate bearing platform (11);

a power supply system (2) having a first electrode electrically connected to the first substrate stage (11) and a second electrode electrically connected to the electrode plate (12), the power supply system (2) being configured to form an electric field between the first substrate stage (11) and the electrode plate (12) to induce a growth orientation of a thin film deposited on the substrate (100).

2. The atomic layer deposition apparatus according to claim 1, further comprising a control system (3), the control system (3) being electrically connected to the power supply system (2) for controlling the magnitude and direction of the electric field.

3. The atomic layer deposition apparatus according to claim 1, wherein at least a partial area of the first substrate carrier (11) is formed by sequentially bonding a non-conductive body and a conductive body in a plane direction according to a predetermined pattern.

4. Atomic layer deposition apparatus according to claim 3, wherein the first substrate carrier stage (11) comprises a first carrier region (111) and a second carrier region (112) which are adjacent in a planar direction, the electrical conductor comprising a first electrical conductor (1112) and a second electrical conductor, wherein the first carrier region (111) is formed by the non-conductive body (1111) and the first electrical conductor (1112) being joined in accordance with the predetermined pattern, and the second carrier region (112) is formed by the second electrical conductor.

5. The atomic layer deposition device according to claim 3, wherein the predetermined pattern comprises a raster type pattern.

6. The atomic layer deposition apparatus according to any of the claims 1 to 5, further comprising a first gas inlet system and a first gas exhaust system communicating with the reaction chamber (10), wherein the first gas inlet system has a gas distribution structure (41) extending into the reaction chamber (10), the electrode plate (12) is connected to a lower end of the gas distribution structure (41), and the electrode plate (12) is provided with a plurality of first gas homogenizing holes (120).

7. The atomic layer deposition apparatus according to claim 6, wherein the first gas inlet system comprises a first gas inlet line (401) connected between a gas supply system (400) and the gas distribution structure (41), the first gas inlet line (401) being provided with first heating means.

8. The atomic layer deposition apparatus according to claim 6,

the upper end of the gas distribution structure (41) is provided with a gas inlet (410);

the gas distribution structure (41) is internally provided with a gas distribution plate (42), the gas distribution plate (42) is positioned between the gas inlet (410) and the electrode plate (12), and the gas distribution plate (42) is provided with a plurality of second uniform gas holes (420).

9. The atomic layer deposition apparatus according to claim 8, wherein the gas distribution plate (42) has a central area (421) opposite to the gas inlet (410), the second gas distribution holes (420) being arranged around the central area (421).

10. The atomic layer deposition apparatus according to claim 8, wherein the gas distribution plate (42) has a diameter smaller than a diameter of the electrode plate (12).

11. The atomic layer deposition apparatus according to claim 8, wherein the gas distribution plate (42) is suspended in the gas distribution structure (41) by a support (43).

12. The atomic layer deposition apparatus according to claim 6, wherein the first pumping system comprises a negative pressure system and a first pumping line (51), the negative pressure system being in communication with the reaction chamber (10) through the first pumping line (51).

13. The atomic layer deposition apparatus according to any of the claims 1 to 5, wherein the reaction chamber (1) is provided with a first temperature regulating system for regulating the temperature inside the reaction chamber (10) and a first temperature sensor for sensing the temperature inside the reaction chamber (10).

14. The atomic layer deposition device according to any of claims 1 to 5, further comprising: an etching chamber (7) having an etching cavity (70), the etching cavity (70) having a second substrate carrier (71) disposed therein; a first transfer mechanism (81), wherein the first transfer mechanism (81) is used for transferring the substrate (100) on the first substrate bearing table (11) in the reaction cavity (10) to the second substrate bearing table (71) of the etching cavity (70).

15. The atomic layer deposition apparatus according to claim 14, wherein the etch chamber (7) is provided with a second temperature regulation system for regulating the temperature within the etch chamber (70) and a second temperature sensor for sensing the temperature within the etch chamber (70).

16. The atomic layer deposition apparatus according to claim 14, further comprising a second gas inlet system and a second gas exhaust system in communication with the etch chamber (70).

17. The atomic layer deposition apparatus according to claim 16, wherein the second gas supply system comprises a second gas supply line (9) connected between a gas supply system (400) and the etch chamber (70), the second gas supply line (9) being provided with a second heating device.

18. The atomic layer deposition apparatus according to claim 16, wherein the second pumping system comprises a negative pressure system and a second pumping line (52), the negative pressure system being in communication with the etch chamber (70) through the second pumping line (52).

19. The atomic layer deposition device according to any of claims 1 to 5, further comprising: the device comprises a pretreatment chamber (9), a first substrate bearing table (91) and a second substrate bearing table (90), wherein the pretreatment chamber (90) is provided with the third substrate bearing table; a second transfer mechanism (82), wherein the first transfer mechanism (82) is used for transferring the substrate (100) on the third substrate bearing table (91) in the pretreatment cavity (90) to the first substrate bearing table (11) of the reaction cavity (10).

20. The atomic layer deposition apparatus according to claim 19, wherein the pre-treatment chamber (9) is provided with a third temperature regulation system for regulating the temperature within the pre-treatment chamber (90) and a third temperature sensor for sensing the temperature within the pre-treatment chamber (90).

21. The atomic layer deposition apparatus according to claim 19, further comprising a third gas inlet system and a third gas exhaust system in communication with the pre-treatment chamber (90).

22. The atomic layer deposition apparatus according to claim 21, wherein the third gas supply system comprises a third gas supply line (403) connected between a gas supply system (400) and the pre-treatment chamber (90), the third gas supply line (403) being provided with a third heating device.

23. The atomic layer deposition apparatus according to claim 21, wherein the third pumping system comprises a negative pressure system and a third pumping line (53), the negative pressure system being in communication with the pre-treatment chamber (90) through the third pumping line (53).

24. A preparation method of an atomic layer deposition film is provided, wherein the atomic layer deposition film is prepared by using an atomic layer deposition device, the atomic layer deposition device comprises a reaction chamber (10) and a power supply system (2), a first substrate bearing table (11) and an electrode plate (12) are arranged in the reaction chamber (10), the electrode plate (12) is positioned above the first substrate bearing table (11), and two poles of the power supply system (2) are respectively connected with the first substrate bearing table (11) and the electrode plate (12); the preparation method of the atomic layer deposition film comprises the following steps:

placing a substrate on the first substrate carrier;

a second purge gas is injected into the reaction chamber to purge the reaction chamber of reaction residues.

25. The method according to claim 24, wherein at least a partial region of the first substrate holder (11) is formed by sequentially bonding a non-conductive body and a conductive body in a planar direction according to a predetermined pattern.

26. The atomic layer deposition film preparation method according to claim 25,

the first substrate carrier (11) comprises a first carrier area (111) and a second carrier area (112) which are adjacent in the plane direction, the electrical conductor comprises a first electrical conductor (1112) and a second electrical conductor, wherein the first carrier area (111) is formed by joining the non-conductive body (1111) and the first electrical conductor (1112) according to the preset pattern, and the second carrier area (112) is formed by the second electrical conductor;

the substrate is selectively placed in the first carrier region (111) or the second carrier region (112).

27. The method of claim 24, wherein the substrate is subjected to a patterning pre-treatment prior to being placed on the first substrate carrier.

28. The atomic layer deposition film production method according to any of claims 24 to 27, wherein the atomic layer deposition apparatus further comprises an etching chamber (7) and a first transfer mechanism (81), the etching chamber (7) having an etching cavity (70), the etching cavity (70) having a second substrate carrier (71) disposed therein; the preparation method of the atomic layer deposition film further comprises the following steps:

29. The method according to any of the claims 24-27, wherein the atomic layer deposition apparatus further comprises a pre-treatment chamber (9) and a second transfer mechanism (82), the pre-treatment chamber (9) having a pre-treatment cavity (90), the pre-treatment cavity (90) having a third substrate carrier (91) arranged therein; the preparation method of the atomic layer deposition film further comprises the following steps:

before the substrate is placed on the first substrate bearing table, the substrate is placed on the third substrate bearing table, the substrate is preprocessed in the preprocessing cavity, and the second transfer mechanism transfers the preprocessed substrate from the preprocessing cavity to the first substrate bearing table of the reaction cavity.