WO2023174181A1

WO2023174181A1 - Manufacturing method and processing device for micro-nano layer structure and electronic device

Info

Publication number: WO2023174181A1
Application number: PCT/CN2023/080840
Authority: WO
Inventors: 李志海; 张适; 王浩宇; 蒋珺楠
Original assignee: 华为技术有限公司
Priority date: 2022-03-14
Filing date: 2023-03-10
Publication date: 2023-09-21
Also published as: CN114772545A

Abstract

Provided in the embodiments of the present application are a manufacturing method and processing device for a micro-nano layer structure and an electronic device. The manufacturing method comprises: providing a mask piece, the mask piece comprising a first area and a second area, and the magnetic field intensity of the first area being larger than that of the second area; providing a substrate, the substrate comprising a base body and a raw adhesive layer, and the raw adhesive layer comprising a colloid and magnetic particles; allowing the mask piece to be opposite to the substrate, a preset distance being formed between the mask piece and the substrate, and the magnetic force of the first area driving the magnetic particles to move, so that the raw adhesive layer forms a patterned mask layer, wherein the patterned mask layer comprises a mask part and a spacer area; etching the base body by taking the patterned mask layer as a mask, so that the base body forms a patterned dielectric layer; and removing the remaining patterned mask layer on the patterned dielectric layer so as to form a dielectric layer. The magnetic particles are driven by the magnetic force, the mask piece is not in contact with the raw adhesive layer, the processing cleanliness is high, the yield is improved, the manufacturing process is simple, and the processing efficiency is improved.

Description

Manufacturing method, processing device and electronic device of micro-nano layer structure

This application requires the priority of the Chinese patent application submitted to the China Patent Office on March 14, 2022, with the application number 202210248455X and the application name "Production method, processing device and electronic device of micro-nano layer structure", and its entire content is approved This reference is incorporated into this application.

Technical field

The present application relates to the technical field of patterned electronic device processing, and in particular to a manufacturing method, processing device and electronic device of a micro-nano layer structure.

Background technique

Nanoimprint technology is a new type of micro-nano processing technology. Nanoimprint technology breaks through the problems of traditional photolithography in the feature size reduction process, and has the characteristics of high resolution and low cost. Therefore, it is expected to replace traditional photolithography technology in the future and become an important processing method in the fields of electricity, optics, and optoelectronics.

At present, nanoimprinting uses an embossing template to imprint on a substrate with an adhesive layer. The embossing template usually has a pattern. After the embossing template directly contacts and squeezes the adhesive layer, the pattern will be printed on the adhesive layer. Then the adhesive layer forming the pattern is cured, and finally through etching and stripping steps, the required pattern is formed on the substrate.

However, the above-mentioned nanoimprinting technology has complicated steps and low processing efficiency, and the imprinting template will contaminate the adhesive layer, resulting in a reduction in yield.

Contents of the invention

Embodiments of the present application disclose a manufacturing method, processing device and electronic device of a micro-nano layer structure. During the processing, the mask member does not come into contact with the substrate, thereby avoiding contamination of the glue layer on the substrate and improving the yield. The processing steps are simple and the efficiency is high.

The first aspect of the embodiment of the present application discloses a method for manufacturing a micro-nano layer structure, which includes the following steps:

Step S10: Provide a mask. The mask has magnetic permeability or magnetism. The mask includes first and second regions that are staggered. The magnetic field strength of the first region is greater than the magnetic field strength of the second region.

Step S11: Provide a substrate. The substrate includes a base body and an original glue layer provided on the base body. The original glue layer includes colloid and magnetic particles doped in the colloid. Magnetic particles can be diamagnetic particles or paramagnetic particles.

Step S12: The mask is opposite to the substrate, and there is a preset distance between the mask and the substrate. The magnetic force in the first area drives the magnetic particles corresponding to the first area to move, so that the original glue layer Forming a patterned mask layer; the patterned mask layer includes staggered mask portions and spacer regions, the density of magnetic particles in the mask portion is greater than the density of magnetic particles in the spacer region; one of the mask portion and the spacer region is The first area corresponds to the other one to the second area. The magnetic force in the first region can be a repulsive force or an adsorption force. When the magnetic particles are diamagnetic particles, the magnetic force is a repulsive force; when the magnetic particles are paramagnetic particles, the magnetic force is an adsorption force.

Step S13: Using the patterned mask layer as a mask, etch the base body so that the base body forms a patterned dielectric layer. Specifically, the mask part is partially etched, the spacer region is entirely etched, and the area of the base body corresponding to the spacer region is etched, so that the base body forms a patterned dielectric layer.

Step S14: Remove the remaining patterned mask layer on the patterned dielectric layer to form a dielectric layer. Specifically, the spacer area is completely etched, and the mask portion is partially etched. Therefore, removing the remaining patterned mask layer on the patterned dielectric layer actually removes the remaining mask portion on the patterned dielectric layer.

In the manufacturing method of the micro-nano layer structure provided by the embodiment of the present application, during the entire manufacturing process, the mask member does not come into contact with the original glue layer, but uses magnetic force to act on the magnetic particles in the original glue layer to perform patterning processing. The mask piece is not in contact with the original glue layer, so the processing cleanliness is high and the yield is improved. In addition, compared with existing manufacturing methods, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, development, and post-baking. The process is relatively simple, simplifying the manufacturing steps and improving processing efficiency.

In one embodiment, the magnetic particles are diamagnetic particles; the step of driving the magnetic particles corresponding to the first region to move by the magnetic force in the first region includes: the first region generates a repulsive force on the diamagnetic particles, and the repulsive force drives the diamagnetic particles. Move toward the area corresponding to the second area to form a mask portion corresponding to the second area, and to form a spacer area corresponding to the first area.

It can be understood that while the first region generates a repulsive force to the corresponding diamagnetic particles, although the magnetic field strength in the second region is weak, it may also generate a repulsive force to the corresponding diamagnetic particles. The repulsive force generated in the first region is called is the first repulsive force, and the repulsive force generated in the second area is called the second repulsive force. The first repulsive force is greater than the second repulsive force, which ensures that the first repulsive force can drive the diamagnetic particles to move.

Diamagnetic particles are made of one or more of gold, silver, copper and lead. Diamagnetic particles have the property of escaping from an area with a stronger magnetic field to an area with a weaker magnetic field. The magnetic field intensity in the first area is greater than the magnetic field intensity in the second area. Therefore, the diamagnetic particles will move to the area corresponding to the second area and thus remain in the original area. A mask part and a spacer area are formed on the adhesive layer. When the repulsive force in the first area repels the diamagnetic particles, it can form convex portions on the original glue layer without contacting the diamagnetic particles and colloids, thereby reducing the contamination rate and improving the yield.

In one embodiment, the magnetic particles are paramagnetic particles; the step of driving the magnetic particles corresponding to the first area to move by the magnetic force in the first area includes: the first area generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles. Move toward the area corresponding to the first area to form a mask portion corresponding to the first area, and to form a spacer area corresponding to the second area.

It can be understood that while the first region generates an adsorption force to the corresponding paramagnetic particles, the second region may also generate an adsorption force to the corresponding paramagnetic particles. The adsorption force generated in the first area is called the first adsorption force, and the adsorption force generated in the second area is called the second adsorption force. The first adsorption force is greater than the second adsorption force, which ensures that the first adsorption force can drive paramagnetic particles. move.

Paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When paramagnetic particles are located in a magnetic field, they will tend to move toward areas with stronger magnetic fields. Paramagnetic particles have the property of moving to areas with stronger magnetic fields. The magnetic field intensity in the first area is greater than the magnetic field intensity in the second area. Therefore, the paramagnetic particles will move to the area corresponding to the first area, thereby forming a mask portion and a gap. district. When the adsorption force of the first region adsorbs paramagnetic particles, it can form a mask portion on the original glue layer without contacting the paramagnetic particles and colloids, thus reducing the contamination rate and improving the yield.

In one embodiment, the mask portion is a convex portion that protrudes away from the base body, and the spacing area is a recessed portion that is concave toward the base body. The cross-section of the convex portion is a shape in which the height gradually decreases from the middle to both sides, similar to a convex arc shape. The thickness of the convex part is greater than the thickness of the recessed part. Therefore, during etching, the portions of the base body corresponding to the convex portions are blocked by the convex portions, while all the recessed portions are etched, and the base body corresponding to the recessed portions is etched, thereby forming a patterned dielectric layer. Since the convex portion and the concave portion are not in contact with the mask when they are formed, the accuracy is higher. When the convex portion is used as the mask portion to etch the substrate, the etching accuracy and yield are both higher.

In one embodiment, the magnetic induction intensity of the mask is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascal second and 10,000 Pascal second. The magnetic induction intensity of the mask is within the above range, which can ensure that the mask generates sufficient repulsive force for the magnetic particles, ensures the smooth formation of the convex parts, and maintains the thickness of the convex parts to form appropriate micro-nano after etching. within the scope of the structure. Avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient thickness of the convex portion, which may result in subsequent etching failure of the substrate and failure to process into micro-nano structures; or, resulting in excessive thickness of the convex portion, which may result in subsequent etching. The micro-nano structure is too deep. The colloid viscosity of the original glue layer is within the above range, which enables the convex portion to be formed smoothly, and the thickness is maintained within a range that can be etched into a pattern. To avoid causing the convex part forming failure or immediate It was formed, but the thickness of the convex part was not appropriate.

In one embodiment, the step of driving the magnetic particles corresponding to the first area to move by the magnetic force in the first area includes: the magnetic force in the first area drives the magnetic particles corresponding to the first area to drive the colloid to move to form the convex portion. The magnetic particles drive the colloid to move. Specifically, the diamagnetic particles drive the colloid to move to the area corresponding to the second area, or the paramagnetic particles drive the colloid to move to the area corresponding to the first area. After the colloid moves, it forms convex and concave parts, which facilitates subsequent etching.

In one embodiment, the mask part is a magnetic particle gathering part, and the spacing area is a magnetic particle sparse part; the magnetic particle density at the magnetic particle gathering part is greater than the magnetic particle density at the magnetic particle sparse part. If the density of magnetic particles in the mask part is high, but there are no magnetic particles in the interval area or the density of magnetic particles is low, then the hardness of the mask part will be greater than the hardness of the other parts. During etching, in the same time, the hardness of the mask part will The thickness decreases less. After all the spacers are etched and the base body corresponding to the spacers is partially etched, a portion of the mask portion remains, so that a patterned dielectric layer can be formed. Since the magnetic particle aggregation part and the magnetic particle sparse part are formed without contact with the mask, the accuracy is higher. The magnetic particle aggregation part serves as the mask part, resulting in higher etching accuracy and higher yield.

In one embodiment, the magnetic induction intensity of the mask is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.001 Pascal seconds and 100 Pascal seconds. The magnetic induction intensity of the mask is within the above range, which can ensure that the mask has sufficient adsorption force to the magnetic particles, ensure the smooth formation of the mask part, and maintain the density of the diamagnetic particles in the mask part at the etching level. Within the range that suitable micro-nano structures can be formed. Avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient density of diamagnetic particles at the mask part, which may lead to failure to etch the substrate into subsequent micro-nano structures; or result in the mask part being If the diamagnetic particles are too dense, the subsequently etched micro-nano structure may be too deep. The colloid viscosity of the original glue layer is within the above range, which enables the mask portion to be formed smoothly, and the density of the diamagnetic particles is maintained within a range that can be etched into a pattern. This is to avoid causing the mask part to fail to form, or even if it is formed, the density of magnetic particles in the mask part is inappropriate.

In one embodiment, the step of driving the magnetic particles corresponding to the first area to move by the magnetic force of the first area includes: the magnetic force of the first area driving the magnetic particles corresponding to the first area to move to form a magnetic particle aggregation part. The movement of magnetic particles may specifically be that diamagnetic particles move to the area corresponding to the second area, or that paramagnetic particles move to the area corresponding to the first area. After the magnetic particles move, a magnetic particle agglomeration part and a magnetic particle sparse part will be formed, which facilitates subsequent etching.

In one embodiment, while the first region generates a first magnetic force on the magnetic particles, the second region generates a second magnetic force on the magnetic particles. The first magnetic force is between 5 times and 200 times the second magnetic force. This ensures that the first magnetic force is greater than the second magnetic force, so that the first magnetic force can drive the magnetic particles to move.

In one embodiment, the number of mask members is two; the magnetic particles are diamagnetic particles; the mask member is opposed to the substrate, and the step of driving the magnetic particles corresponding to the first region to move by the magnetic force in the first region includes: The substrate is placed between the two mask parts, so that the original glue layer faces one of the mask parts, and the base body faces the other of the mask parts; the first repulsive force of the first area of one of the mask parts, and the second repulsive force of the first area of another mask member drives the diamagnetic particles corresponding to the first area to move.

It can be understood that for the two mask elements located on the upper and lower sides of the substrate, the first regions of the two mask elements are opposite to each other, and the second regions of the two mask elements are opposite to each other. That is to say, the respective first regions of the two mask elements are opposite to each other. The first areas are aligned in the height direction, and the respective second areas of the two mask members are aligned in the height direction. Both the first repulsive force and the second repulsive force act on the diamagnetic particles, which can accelerate the escape of the diamagnetic particles to the area corresponding to the second area, thereby accelerating the formation of the mask portion to improve production efficiency.

In one embodiment, the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than the magnetic field strength of the second region. The thickness difference between the first region and the second region is used to cause a difference in magnetic field intensity between the first region and the second region, and the difference in magnetic field intensity is used to adsorb or repel magnetic particles, thereby forming a mask part and a structure of the mask part. The structure is relatively simple, the processing is convenient, and the cost is low.

In one embodiment, the mask element includes a stacked and distributed mask plate and an electromagnetic element. The mask plate is made of soft magnet; the first region and the second region are formed on the mask plate, and the first region and the second region are formed on the mask plate. The thickness of the areas is equal; the electromagnetic component includes a plurality of electromagnets, the plurality of electromagnets correspond to the first area, and the pattern formed by the multiple electromagnets is the same as the shape of the first area; so that after the mask plate is magnetized by the electromagnetic component, The magnetic field strength in the first region is greater than the magnetic field strength in the second region. Therefore, the mask plate has a simple structure, is easy to process, and has strong structural strength, and can also ensure smooth formation of the mask portion.

The second aspect of this application provides an electronic device, including: a base layer, a dielectric layer and a functional layer. The dielectric layer and the functional layer are sequentially laminated on the surface of the base layer. The dielectric layer is made by using any one of the manufacturing methods of the first aspect of this application. . The dielectric layer is manufactured using the above-mentioned manufacturing method, with a high yield and low cost.

The third aspect of this application provides a processing device for micro-nano layer structure, which is used in any of the manufacturing methods of the first aspect of this application, wherein the processing device includes: a mask; the mask has magnetic permeability or magnetic properties , the mask includes first regions and second regions that are staggeredly distributed, and the magnetic field strength of the first region is greater than the magnetic field strength of the second region.

In one embodiment, the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than the magnetic field strength of the second region. The thickness difference between the first region and the second region is used to cause a difference in magnetic field intensity between the first region and the second region. The difference in magnetic field intensity is used to adsorb or repel magnetic particles, thereby forming a mask part. The structure of the mask part is relatively simple. , easy to process and low cost.

In one embodiment, the mask has a first surface and a second surface arranged oppositely, the mask includes a plurality of shielding areas and a plurality of hollow areas, the hollow areas penetrate the first surface and the second surface, and the plurality of shielding areas The areas are alternately arranged with multiple hollow areas, and the patterns formed by the multiple blocking areas are the same as the mask part, or the patterns formed by the multiple hollow areas are the same as the mask part. As a result, the mask piece is lighter in weight and smaller in size.

In one embodiment, the mask member includes a plurality of protrusions and a plurality of recessed parts, and the area between any two adjacent recessed parts forms protrusions; the pattern formed by the plurality of protrusions is the same as the mask part, or multiple The pattern formed by the recessed portion is the same as that of the mask portion. Therefore, the mask piece has strong structural strength and is not easily deformed, which can extend the service life of the mask piece.

In one embodiment, the mask member includes a stacked first plate and a second plate, the second plate has a first surface and a second surface arranged oppositely, and the second plate includes a plurality of shielding areas and a plurality of hollow areas, The hollow area runs through the first surface and the second surface, and the area between any two adjacent hollow areas forms a shielding area; the first plate and the second plate are fixedly connected, and the multiple shielding areas and the first plate form multiple protrusions. , the plurality of hollow areas and the first plate form a plurality of recessed portions; the pattern formed by the plurality of protrusions is the same as the mask portion, or the pattern formed by the plurality of recessed portions is the same as the mask portion. This facilitates processing and reduces costs. The first plate is used to enhance the structural strength of the entire mask piece so that the mask piece is not easily deformed, thereby extending the service life of the mask piece.

In one embodiment, the mask member is made of permanent magnets. The permanent magnet itself has magnetism and can generate a magnetic field without external interference; the permanent magnet can be a samarium cobalt magnet, a neodymium iron boron magnet, a ferrite magnet, an alnico magnet or an iron chromium cobalt magnet, etc.; the magnetism of a permanent magnet is relatively stable. No external assistance is required and it is easy to use.

In one embodiment, the mask plate includes stacked and distributed mask plates and electromagnetic components, and the mask panel is made of soft magnet; the mask panel includes a first preparation area and a second preparation area, and when the electromagnetic components are energized to generate magnetism, the mask panel includes a first preparation area and a second preparation area. The first preparation area and the second preparation area are magnetic, the first preparation area is the first area, and the second preparation area is the second area. Soft magnets can be made of one or more of pure iron, low carbon steel, silicon steel sheets, permalloy, ferrite, etc.; soft magnets are relatively flexible in magnetic properties and can cooperate with electromagnetic components, so that they can be controlled according to actual needs. The magnetic strength and presence or absence of soft magnets have strong applicability.

In one embodiment, the electromagnetic component includes a plurality of electromagnets, the plurality of electromagnets correspond to the first region, and the pattern formed by the plurality of electromagnets is the same as the shape of the first region. The thickness of the first region is greater than that of the second region. Combined with the electromagnetic component corresponding to the first region, the magnetic field strength in the first region can be significantly greater than the magnetic field strength in the second region, so that the first repulsive force is much greater than the second repulsive force. Or the first adsorption force is much greater than the second adsorption force to increase the formation speed of the mask part, Speed up production efficiency.

In one embodiment, the electromagnetic component includes a first group of electromagnets and a second group of electromagnets, the first group of electromagnets corresponds to the first region, and the pattern formed by the first group of electromagnets is the same as the shape of the first region; The two sets of electromagnets correspond to the second area, and the pattern formed by the second set of electromagnets is the same as the shape of the second area. That is to say, a plurality of electromagnets are uniformly stacked on top of the mask plate. Therefore, the mask member has a relatively simple structure and is easy to manufacture.

In one embodiment, the mask plate includes stacked and distributed mask plates and electromagnetic components, and the mask plate is made of soft magnet; the mask plate includes a first preparation area and a second preparation area, and the first preparation area and the second preparation area The thickness of the preparation area is the same; when the electromagnetic component is energized to generate magnetism, the first preparation area and the second preparation area have magnetism, the first preparation area is the first area, and the second preparation area is the second area; the electromagnetic component includes a plurality of electromagnets, The plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets is the same as the shape of the first area. That is to say, in this embodiment, the thickness of the mask plate is uniform, and the electromagnetic element corresponds to the first area, so that the magnetic field intensity in the first area is greater than the magnetic field intensity in the second area. Therefore, the mask plate has a simple structure, is easy to process, and has strong structural strength, and can also ensure smooth formation of the mask portion.

In the manufacturing method of the micro-nano layer structure provided by the embodiments of the present application, during the entire manufacturing process, the mask piece does not come into contact with the original glue layer, but uses magnetic force to adsorb or repel the magnetic particles in the original glue layer, thereby performing patterning processing. , the mask piece does not come into contact with the original glue layer, so the processing cleanliness is higher and the yield is improved. Non-contact processing can also be applied to smaller size pattern processing, such as patterns below 20 nanometers. In addition, compared with existing manufacturing methods, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, development, and post-baking. The process is relatively simple, simplifying the manufacturing steps and improving processing efficiency.

Description of the drawings

The drawings used in the embodiments of this application are introduced below.

Figure 1 is a schematic cross-sectional view of a partial structure of an electronic device.

FIG. 2 is a flow chart of a method for manufacturing the micro-nano layer structure shown in FIG. 1 .

FIG. 3 is a top view of a mask member of the manufacturing method of the micro-nano layer structure shown in FIG. 1 .

Figures 3a to 3f are schematic side structural views of the mask provided by the method of manufacturing the micro-nano layer structure shown in Figure 3.

FIG. 4 is a schematic structural diagram of the substrate provided by the method for manufacturing the micro-nano layer structure shown in FIG. 2 .

5a to 5f are schematic structural diagrams of the mask member and the substrate facing each other in the manufacturing method of the micro-nano layer structure shown in FIG. 2.

6a to 6f are schematic diagrams corresponding to the mask member and the substrate in FIGS. 5a to 5f and using the mask member to form a mask portion on the substrate.

Figures 7a and 7b are another structural schematic diagram of the mask member and the substrate facing each other in the method of manufacturing the micro-nano layer structure shown in Figure 2.

8a and 8b are schematic diagrams corresponding to the mask member in FIGS. 7a and 7b that uses a magnetic field to form a mask portion on the substrate.

Figures 9a to 9f are yet another structural schematic diagram of the mask member and the substrate facing each other in the method of manufacturing the micro-nano layer structure shown in Figure 2.

10a to 10f are schematic diagrams corresponding to the mask member in FIGS. 9a to 9f using a magnetic field to form a mask portion on the substrate.

Figures 11a and 11b are yet another structural schematic diagram of the mask member and the substrate facing each other in the method of manufacturing the micro-nano layer structure shown in Figure 2.

12a and 12b are schematic diagrams corresponding to the mask member in FIGS. 11a and 11b using a magnetic field to form a mask portion on the substrate.

Figures 13a and 13b are another structural schematic diagram of the mask member facing the substrate in the method of manufacturing the micro-nano layer structure shown in Figure 2.

14a and 14b are schematic diagrams corresponding to the mask member in FIGS. 13a and 13b using a magnetic field to form a mask portion on the substrate.

Figures 15a and 15b are another structure in which the mask member is opposite to the substrate in the manufacturing method of the micro-nano layer structure shown in Figure 2 Schematic diagram.

Figures 16a and 16b are schematic diagrams corresponding to the mask member in Figures 15a and 15b using a magnetic field to form a mask portion on the substrate.

FIG. 17a is a schematic structural diagram of the patterned mask layer formed in FIGS. 6a to 6f, 8a to 8b, and 10a to 10f after etching.

Figure 17b is a schematic structural diagram of the patterned mask layer formed in Figures 12a to 12b, 14a to 14b, and 16a to 16b after being etched.

Figure 18 is a schematic structural diagram of the patterned dielectric layer in Figures 17a and 17b after the remaining mask portion is removed.

Detailed ways

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

Embodiments of the present application provide an electronic device. The electronic device includes a patterned dielectric layer. The electronic device can be used in the production of electronic devices in the fields of electricity, optics, optoelectronics, etc., for example, used to prepare semiconductor electronic devices, gratings, etc. Semiconductor electronic devices such as light-emitting diode chips (light-emitting diode, LED), organic light-emitting diode (organic light-emitting diode, OLED), thin film transistors or field effect transistors, etc. The above electronic devices are suitable for electronic equipment such as mobile phones, display screens, and computers. For example, it can be used in mobile phone displays. Among them, the conductive circuit layer and the insulating functional layer have nanometer-sized patterns, which can be called micro-nano layer structures.

Please refer to Figures 1 and 2. Figure 1 is a schematic cross-sectional view of a partial structure of an electronic device, and Figure 2 is a flow chart of a method for manufacturing the micro-nano layer structure shown in Figure 1.

The electronic device 10 of this embodiment includes a base layer 11, a dielectric layer 12 and a functional layer 13. The dielectric layer 12 and the functional layer 13 are sequentially stacked on the surface of the base layer. The base layer 11 may be a glass layer. The dielectric layer 12 may be made of silicon dioxide.

This embodiment takes manufacturing a light-emitting diode chip as an example for description. The functional layer 13 has a multi-layer structure, for example, including an N or P-type semiconductor layer, a metal layer, an insulating layer, a light-emitting layer, a terrace layer and other layer structures. In FIG. 1 of this embodiment, only the dielectric layer 12 is shown, and the functional layer 13 is simply illustrated.

In other embodiments, the electronic device is a thin film transistor (TFT), which can be applied to an array substrate of a liquid crystal display (LCD) or an organic light-emitting diode display (OLED). The functional layers are multiple Layer structure, such as gate, source and drain, channel layer, etc.

The micro-nano layer structure in this embodiment is mainly an insulating dielectric layer 12. This embodiment provides a method for manufacturing a micro-nano layer structure, which includes the following steps.

Step S10: Provide a mask. The mask has magnetic permeability or magnetism. The mask includes first and second regions that are staggered. The magnetic field strength of the first region is greater than the magnetic field strength of the second region. Specifically, the mask includes a plurality of first regions and a plurality of second regions, and there is a second region spaced between every two adjacent first regions; that is, the first regions and the second regions are alternately distributed. . The magnetic field strength in the first region is greater than the magnetic field strength in the second region, and the magnetic field strength in the second region can be at least 0. The first region and the second region are used to form a patterned mask layer on the base layer of the electronic device.

Referring to Figure 3, Figure 3a to Figure 3f, Figure 3 is a top view of a mask member of the manufacturing method of the micro-nano layer structure shown in Figure 1, which only illustrates a situation of the mask member, and does not represent It is the only form of the mask. Figures 3a to 3f are schematic side structural views of the mask provided by the method of manufacturing the micro-nano layer structure shown in Figure 3.

Referring to Figure 3a, in the first embodiment of the present application, the mask member 100 is in the shape of a thin plate and is a permanent magnet. The permanent magnet itself has magnetism and can generate a magnetic field without external interference. The permanent magnet can be a samarium cobalt magnet or a neodymium iron boron magnet. Magnets, ferrite magnets, Alnico magnets or iron-chromium-cobalt magnets, etc.; permanent magnets have relatively stable magnetic properties, require no external assistance, and are more convenient to use.

The mask 100 is in the shape of a thin plate, and includes a first surface 103 and a second surface 104 arranged oppositely, and also includes a plurality of hollow areas 105 and a plurality of shielding areas 106 . A plurality of hollow areas 105 penetrates the first surface 103 and the second surface 104 and are staggered with a plurality of shielding areas 106 . In fact, the hollow areas 105 penetrate the first surface 103 and the second surface 104 . Other than the hollow areas 105 The position forms the occlusion area 106. The shielding area 106 is the first area 101, and the hollow area 105 is the second area 102. There is no magnetic or permeable material in the second region 102. Therefore, the magnetic field strength of the second region 102 is weaker than the magnetic field strength of the first region 101, or even there is no magnetic field. Therefore, the magnetic field strength of the first region 101 is greater than that of the second region 102. Magnetic field strength.

In an implementation of the first embodiment, the mask member 100 is non-magnetic and magnetically permeable, and the magnetism is transferred to the mask member through magnets or electromagnets. In another embodiment, the mask 100 is a plate with magnetic particles mixed inside, and the magnetic particles can be permanent magnetic particles; for example, silica gel and magnetic particles are mixed together and solidified to form the plate-shaped mask 100 .

Referring to Figure 3b, in the second embodiment of the mask member of the present application, the mask member 200 includes a first surface 201 and a second surface 202. The first surface 201 is provided with a plurality of recessed portions 203 toward the second surface 202. The recessed portions 203 does not penetrate the second surface 202, and a protrusion 204 is formed between two adjacent concave portions 203. The protrusions 204 and the concave portions 203 are alternately distributed. The protrusions 204 are the first region 101 and the concave portion 203 is the second region 102. In this embodiment, the mask member is a permanent magnet and is integrally formed. Since the thickness of the recess 203 is smaller than the thickness of the protrusion 204 , the magnetic field intensity at the recess 203 is weaker than that at the protrusion 204 , so that the magnetic field intensity in the first region 101 is greater than the magnetic field intensity in the second region 102 . By providing the recessed portion 203, the magnetic field intensity can be distinguished, and the area between the bottom wall of the recessed portion 203 and the second surface 202 can be used as a support to support the mask member 200, ensuring that the mask member 200 has a strong structural strength and is not easily deformed. Longer service life.

In one embodiment, the mask 200 includes a first plate 210 and a second plate 220 that is stacked and fixed with the first plate 210. The first plate 210 is non-magnetic, and the second plate 220 is the same as the mask of the first embodiment. , can be a permanent magnet or have magnetic permeability. The first plate 210 is used to enhance the strength of the second plate 220 so that the entire mask 200 is not easily deformed and has a longer service life. After the second plate 220 and the first plate 210 are stacked and fixed, the structure is the same as that of the second embodiment shown in Figure 3b. At this time, the mask member 200 specifically includes a recess 203 and a protrusion 204. The protrusion 204 is the third A region 101, the recess 203 is a second region 102. No detailed description is given here. In other embodiments, the first plate 210 may also have magnetic properties.

Of course, the mask 200 in this embodiment may not have magnetism and may generate magnetism through external magnetic conduction. In another embodiment, an electromagnet is provided near the mask member 200. When the electromagnet is energized, the soft magnet can be magnetized to generate a magnetic field. Soft magnets can be made of one or more of pure iron, low carbon steel, silicon steel sheets, permalloy, ferrite, etc.; the magnetic properties of soft magnets are relatively flexible, and the magnetic strength and effectiveness of soft magnets can be controlled according to actual needs. None, strong applicability.

In the third embodiment of the mask of the present application, the mask includes a mask plate and an electromagnetic element, the mask plate and the electromagnetic element are stacked and arranged at intervals, and the mask plate includes a first preparation area and a second preparation area, When the electromagnetic component is energized to generate magnetism, the first preparation area and the second preparation area have magnetism. The first preparation area is the first area, and the second preparation area is the second area. In one embodiment, the first preparation area includes a plurality of blocking areas, the second preparation area includes a plurality of hollow areas, the plurality of blocking areas and the plurality of hollow areas are staggered, and the plurality of blocking areas are a plurality of first areas. Multiple hollow areas are multiple second areas. In another embodiment, the first preparation area includes a plurality of protrusions, the second preparation area includes a plurality of recesses, the plurality of protrusions and the plurality of recesses are staggered, and the plurality of protrusions are a plurality of first regions. Each concave portion is the second area.

The mask plate is a soft magnet. The soft magnet itself does not have magnetism, but it has magnetic permeability. When the soft magnet is in a magnetic field, it can be magnetized and become magnetic. Specifically, the soft magnet is magnetized by placing the soft magnet in an electromagnetic field. The structure of the mask plate in this embodiment can be the structure of any of the above embodiments.

The electromagnetic component includes a plurality of electromagnets arranged at intervals. The plurality of electromagnets at least correspond to the blocking areas. It can also be understood that the pattern formed by the plurality of electromagnets and the pattern formed by the plurality of blocking areas are exactly the same. Electromagnetic components also include components that carry multiple electromagnets The main body (not shown in the figure), the main body can be a plate-shaped, column-shaped or other component capable of carrying electromagnetic components.

In one embodiment, electromagnets are provided at positions corresponding to the multiple shielding areas and the multiple hollow areas, which can be divided into a first group of electromagnets and a second group of electromagnets; wherein, corresponding to the multiple shielding areas The electromagnets are called the first group of electromagnets, and the electromagnets corresponding to the multiple hollow areas are called the second group of electromagnets. The pattern formed by the first group of electromagnets is exactly the same as the pattern formed by the plurality of shielding areas; the pattern formed by the second group of electromagnets is exactly the same as the pattern formed by the plurality of hollow areas; and the magnetism of the first group of electromagnets is greater than or equal to that of the first group of electromagnets. The magnetism of the two sets of electromagnets. Among them, a blocking area is a first area, and a hollow area is a second area. That is to say, there are multiple first areas and multiple second areas.

Electromagnetic components include electromagnets. The electromagnets include an iron core and a coil. The iron core is a soft magnet. A coil is wound around the iron core. Then the coil is energized to magnetize the iron core, making the electromagnet magnetic, thereby generating a magnetic field. Soft magnets can be made of one or more of pure iron, low carbon steel, silicon steel sheets, permalloy, ferrite, etc.; the magnetic properties of soft magnets are relatively flexible, and the magnetic strength and effectiveness of soft magnets can be controlled according to actual needs. None, strong applicability.

Referring to Figure 3c, in an implementation of the third embodiment, the mask 300 includes a mask plate 310 and an electromagnetic element 320. The mask plate 310 and the electromagnetic element 320 are stacked and arranged at intervals. The mask plate 310 in this embodiment is a soft magnetic material. The soft magnetic material itself does not have magnetism, but can be magnetized by electromagnetic components. The magnetized soft magnetic material will generate a magnetic field, thereby generating a magnetic force on the magnetic particles. The mask plate 310 includes a plurality of shielding areas 311 and a plurality of hollow areas 312. The plurality of shielding areas 311 and the plurality of hollow areas 312 are staggered; one shielding area 311 is a first area 101, and one hollow area 312 is a second area. The number of areas 102, that is to say, the first areas 101 and the second areas 102 are also multiple.

The electromagnetic component 320 includes a plurality of electromagnets 321 arranged at intervals. The plurality of electromagnets 321 are divided into a first group of electromagnets 322 and a second group of electromagnets 323. The first group of electromagnets 322 corresponds to the first region 101, and the second group of electromagnets 322 corresponds to the first region 101. Iron 323 corresponds to the second region 102. Each electromagnet 321 includes an iron core 324 and a coil 325. The iron core 324 is a soft magnet. The coil 325 is wound around the iron core 324. Then the coil 325 is energized to magnetize the iron core 324, making the electromagnet 321 magnetic. Generate a magnetic field.

An electromagnetic component 320 is arranged above the mask plate 310 and is energized. After energization, the mask plate 310 is in the electromagnetic field. Since the thickness of the shielding area 311 is greater than the hollow area 312, the shielding area 311 is magnetically conductive and generates stronger magnetism. The hollow area 312 is not magnetically conductive, so the magnetism at the hollow area 312 is weak, thus forming a difference in magnetic field intensity between the first area 101 and the second area 102 on the mask 300 .

Referring to Figure 3d, in another implementation of the third embodiment, the mask 400 includes a mask plate 410 and an electromagnetic element 420, and the mask plate 410 and the electromagnetic element 420 are stacked and arranged at intervals. The mask plate 410 is a soft magnetic material. The mask plate 410 includes a plurality of protrusions 411 and a plurality of recesses 412. The plurality of protrusions 411 and the plurality of recesses 412 are arranged in a staggered manner. The electromagnetic component 420 includes a plurality of electromagnets 421 arranged at intervals. The electromagnetic component 420 is provided with electromagnets 421 at positions corresponding to the plurality of protrusions 411 and the plurality of recesses 412. The plurality of electromagnets 421 correspond to the plurality of protrusions 411. The plurality of electromagnets 421 corresponding to the plurality of recessed portions 412 are called the first group of electromagnets 422 and are called the second group of electromagnets 423 . The pattern formed by the first group of electromagnets 422 is exactly the same as the pattern formed by the plurality of protrusions 411 , the pattern formed by the second group of electromagnets 423 is exactly the same as the pattern formed by the plurality of recesses 412 ; and the magnetism of the first group of electromagnets 422 Greater than or equal to the magnetism of the second group of electromagnets 423 . Among them, the protrusion 411 is the first area 101 and the recess 412 is the second area 102 .

The electromagnetic component 420 includes a plurality of electromagnets 421. The electromagnet 421 includes an iron core 424 and a coil 425. The iron core 424 is a soft magnet. The coil 425 is wound around the iron core 424. Then the coil 425 is energized to magnetize the iron core 424. The electromagnet 421 is made magnetic, thereby generating a magnetic field.

In yet another implementation of the third embodiment, the mask plate 410 includes a first plate 413 and a second plate 414 stacked and fixed with the first plate 413. The first plate 413 is non-magnetic, and the second plate 414 is in contact with the first embodiment. The masks in the examples are the same and can be permanent magnets or have magnetic permeability. The first plate 413 is used to enhance the strength of the second plate 414, is not easily deformed, and has a long service life. After the second plate 414 and the first plate 413 are stacked and fixed, the structure is the same as that of the above embodiment, including the recess 412 and the protrusion. 411, the protrusion 411 is the first region 101, and the recess 412 is the second region 102. No detailed description is given here.

An electromagnetic component 420 is arranged above the mask plate 410. At this time, the mask plate 410 is in an electromagnetic field. The thickness of the protrusion 411 is greater than the thickness of the recessed portion 412, so the magnetism at the recessed portion 412 is weak, so that the third element on the mask component 400 is One area 101 and the second area 102 form a difference in magnetic field intensity.

Referring to Figure 3e, in another specific implementation of the third embodiment, the mask member 500 includes a mask plate 510 and an electromagnetic element 520, and the mask plate 510 and the electromagnetic element 520 are stacked and arranged at intervals. The mask plate 510 is a soft magnetic material. The mask plate 510 includes a plurality of shielding areas 511 and a plurality of hollow areas 512. The plurality of shielding areas 511 and the plurality of hollow areas 512 are arranged in a staggered manner. The electromagnetic component 520 includes a plurality of electromagnets 521 arranged at intervals. The plurality of electromagnets 521 correspond to the shielding areas 511 . It can also be understood that the pattern formed by the plurality of electromagnets 521 is exactly the same as the pattern formed by the plurality of shielding areas 511 . The electromagnetic component 520 also includes a main body (not shown) carrying multiple electromagnets. Specifically, the multiple electromagnets are fixed on the main body. The shielding area 511 forms the first area 101, and the hollow area 512 forms the second area 102.

The electromagnetic component 520 includes a plurality of electromagnets 521. The electromagnet 521 includes an iron core 522 and a coil 523. The iron core 522 is a soft magnet. The coil 523 is wound around the iron core 522, and then the coil 523 is energized to magnetize the iron core 522. The electromagnet 521 is made magnetic, thereby generating a magnetic field.

In this embodiment, what is different from the mask shown in FIG. 3c is that electromagnets are provided only at positions corresponding to the shielding areas 511 . That is, the mask 500 has only one set of electromagnets 521 corresponding to the shielding area 511 . Therefore, the magnetic field strength in the first region 101 is greater than the magnetic field strength in the second region 102. After the soft magnet is magnetized, the magnetic field strength in the first region 101 is greater than the magnetic field strength in the second region 102; in addition, the hollow region 512 has no magnetism. Or there is a magnetically permeable material (the thickness of the hollow area 512 is smaller than the thickness of the shielding area 511), so the magnetic field intensity in the hollow area 512 is weaker than that in the shielding area 511, and the difference in magnetic field intensity between the first area 101 and the second area 102 is increased. The processing of microstructures on electronic devices can be realized more efficiently.

Referring to Figure 3f, in the fourth embodiment of the mask element, the mask element 600 includes a mask plate 610 and an electromagnetic element 620. The mask plate 610 and the electromagnetic element 620 are stacked and arranged at intervals. The mask plate 610 is a soft magnetic material with uniform thickness. The electromagnetic component 620 includes a plurality of electromagnets 621 arranged at intervals. The plurality of electromagnets 621 correspond to the first region 101. It can also be understood that the pattern formed by the plurality of electromagnets 621 is exactly the same as the pattern formed by the plurality of first regions 101. of. The plurality of electromagnets 621 are energized to make the mask plate 610 have magnetism. That is, the positions on the mask plate 610 corresponding to the plurality of electromagnets 621 are the first regions 101, and other positions are the second regions 102, and are arranged in a staggered manner. The first areas 101 and the second areas 102 are arranged alternately.

The mask plate 610 is a thin plate, including a first surface 613 and a second surface 614, both of which are flat. The electromagnet 621 is spaced opposite to the first surface 613 . A plurality of electromagnets 621 are arranged at intervals. The pattern formed by the plurality of electromagnets 621 is located in the first area 101, that is, after the coil is energized, the mask plate 610 is located in the magnetic field. After magnetization, the pattern opposite to the electromagnet 621 The area is the first area 101, and the area between the two electromagnets 621 is the second area 102; because the first area 101 is provided with the electromagnet 621 correspondingly, and the corresponding position of the second area 102 is not provided with a magnet, therefore The intensity of the magnetic field in which the first region 101 is located is greater than the intensity of the magnetic field in which the second region 102 is located.

In this embodiment, the magnetism of the first region 101 and the magnetism of the second region 102 are distributed in a peak and valley manner. Although the second region 102 does not have a corresponding electromagnet 621, there is still magnetism between the two electromagnets 621. The magnetic field is weak, so the magnetic field in the second region 102 is weak and at the trough position, and the magnetic field in the first region 101 is strong and at the crest position. That is to say, after the electromagnet 621 is energized to magnetize the mask plate 610, strong magnetism and weak magnetism are alternately distributed on the mask plate 610. The area corresponding to the strong magnetism is the first area 101, and the area corresponding to the weak magnetism is the second area. Area 102. It can be understood that the area of the area opposite to the electromagnet 621 is equal to the projected area of the electromagnet 621 on the first surface 613, or the area of the area opposite to the electromagnet 621 is larger than the area of the electromagnet 621 on the first surface 613. shadow area.

Step S11: Provide a substrate 700. The substrate 700 includes a base 710 and an original glue layer 720 provided on the base 710. The glue layer 720 includes a colloid 721 and magnetic particles 722 doped in the colloid 721. The magnetic particles 722 are diamagnetic particles or paramagnetic particles. Magnetic particles 722 are doped in colloid 721 . Diamagnetic particles are made of one or more of gold, silver, copper and lead. When diamagnetic particles are in a magnetic field, they will escape to areas with weaker magnetic fields or areas with no magnetic field. Paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When paramagnetic particles are located in a magnetic field, they will tend to move toward areas with stronger magnetic fields. The magnetic particles 722 are evenly arranged within the colloid 721 .

The original glue layer 720 is formed on a surface of the base 710 by spin coating. In this embodiment, the substrate 710 is any one of a silicon dioxide plate, a glass plate, a silicon plate, an indium phosphide plate, and a gallium arsenide plate. The original glue layer 720 is made of hot embossing glue or ultraviolet embossing glue. The hot embossing glue includes thermoplastic embossing glue or thermosetting embossing glue. The thermoplastic embossing glue is polymethacrylate, polystyrene and polycarbonate. One or more combinations of them; the thermosetting embossing glue is one or a combination of both polyvinyl phenol and propylene phthalate oligomer. UV imprinting glue includes one of acrylic type, polystyrene type and epoxy type or a combination of the two.

Step S12: Pattern the original glue layer, and place the mask piece opposite to the substrate. There is a preset distance between the mask piece and the substrate. The magnetic force in the first area drives the magnetic particles corresponding to the first area to move, so that the original glue layer moves. The layer forms a patterned mask layer; the patterned mask layer includes staggered mask portions and spacer regions, and the density of magnetic particles in the mask portion is greater than the density of magnetic particles in the spacer region; one of the mask portion and the spacer region One corresponds to the first area and the other corresponds to the second area. It should be noted that, according to the actual functional requirements of the dielectric layer, the mask portions corresponding to the plurality of first regions, that is, any two or more of the plurality of mask portions can be connected to each other at a certain edge position to form a medium. Layer pattern to accommodate metal trace design. Any two or more of the same spacers can be connected to each other at a certain edge position.

Referring to Figures 5a, 5b, 5c, 5d, 5e and 5f, Figures 5a to 5f are schematic diagrams of the mask and the substrate facing each other in the method of manufacturing the micro-nano layer structure shown in Figure 2. The mask components in Figures 5a to 5f correspond to the mask components in Figures 3a to 3f respectively.

Referring to Figures 6a, 6b, 6c, 6d, 6e and 6f, Figures 6a to 6f correspond to the mask member and the substrate of Figures 5a to 5f, and the mask member is used to form the mask portion on the substrate. Schematic diagram. That is, a schematic diagram of several implementations of step S12 using the first to fourth embodiments.

In one embodiment, step S12 specifically includes: patterning the original glue layer 720, the first area generates a repulsive force on the diamagnetic particles 726, and the repulsive force drives the diamagnetic particles 726 to move to the area corresponding to the second area, forming a pattern corresponding to the second area. A mask portion 723 corresponding to the two areas is formed, and a spacer area 724 corresponding to the first area is formed. Among them, the mask portion 723 is a convex portion 723a that protrudes away from the base body, and the spacing area 724 is a recessed portion that is concave toward the base body. The thickness of the convex part 723a is larger than that of the recessed part.

The repulsive force generated by the first region 101 is called the first repulsive force. The first repulsive force drives the diamagnetic particles 726 to shift, causing the original glue layer 720 to form convex portions 723a and concave portions, so that the original glue layer 720 forms a patterned mask. The film layer 725 and the convex portion 723a are the mask portion 723. That is to say, the magnetic particles 722 at this time are diamagnetic particles 726, the magnetic force in the first region 101 is called the first magnetic force, the first magnetic force is the first repulsive force, and the convex portion 723a is formed between the original glue layer 720 and the first repulsive force. The area corresponding to the second area 102.

Although the magnetic field intensity in the second region 102 is small, it may also generate a second magnetic force acting on the diamagnetic particles 726. The second magnetic force is a second repulsive force, where the second repulsive force is smaller than the first repulsive force. And the second repulsive force can approach 0. This allows the diamagnetic particles 726 corresponding to the first region 101 to quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times of the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., the second repulsive force.

The first region 101 and the second region 102 are adjacent. Therefore, the farther the second region 102 is from the adjacent first region 101, the weaker the influence of the magnetic field of the first region 101 is. The distance between the second region 102 and the adjacent first region is weaker. 101The closer the location The stronger the influence of the magnetic field of the first region 101 is, therefore, the magnetic repulsive force in the center of the second region 102 is the smallest, and the diamagnetic particles 726 will tend to move to the position corresponding to the center of the second region 102, and reversely. The movement of the magnetic particles 726 will drive the colloid to move. Therefore, the cross-section of the finally formed convex portion 723a is a shape with a height gradually decreasing from the middle to both sides, similar to a convex arc shape.

Step S12 is more specifically as follows: the substrate 700 is placed under the mask, and the original glue layer 720 is located under the mask. Then move the mask member toward the substrate 700. When the distance between the mask member and the substrate 700 reaches a preset distance, stop moving the mask member; so that the first region 101 is sensitive to the diamagnetic particles in the original glue layer 720. A first repulsive force is generated; the first repulsive force drives the diamagnetic particles to shift, so that the area of the original glue layer 720 corresponding to the second area 102 forms a convex portion 723a, so that the original glue layer 720 forms a patterned mask layer 725.

The preset distance between the mask member and the substrate 700 opposite to the original glue layer 720 is determined based on the height of the subsequently formed convex portion 723a, and is set based on the fact that the convex portion 723a does not contact the mask member. That is, the preset distance between the mask member located above the substrate 700 and the substrate 700 in the figure is determined based on the height of the convex portion 723a. The preset distance here refers to: the surface of the base 710 facing the original glue layer 720 and The distance between the surface of the mask member facing the substrate 700 can be understood to mean that the mask member is not in contact with the original glue layer 720 . For example, the height of the convex portion 723a is 3 millimeters, specifically, the distance between the highest point of the convex portion 723a and the surface of the base 710 facing the original glue layer 720 is 3 millimeters. Then, it is sufficient to move the upper mask member to a distance of more than 3 mm from the substrate 700 , which may be specifically set to 4 mm, 5 mm, 7 mm, etc.

Since the magnetic particles are diamagnetic particles 726, the magnetic field of the mask generates a first repulsive force on the diamagnetic particles 726 located therein. Since the magnetic field intensity in the first area 101 of the mask is greater than the magnetic field intensity in the second area 102, after the diamagnetic particles 726 are acted upon by the first repulsive force, the diamagnetic particles in the area corresponding to the first area 101 on the original glue layer 720 726, move to the area corresponding to the second area 102 with a weak magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original glue layer 720 and the first area 101 becomes thinner and formed. In the spacer area 724 , the portion of the original glue layer 720 corresponding to the second region 102 is convex in a direction away from the base 710 , forming a convex portion 723 a , thereby causing the original glue layer 720 to form a patterned mask layer 725 .

In this embodiment, the magnetic induction intensity range of the mask is between 0.1 Tesla and 50 Tesla. For example, the magnetic induction intensity of the mask is 0.1 Tesla, 5 Tesla, 10 Tesla, 15 Tesla, 25 Tesla, 35 Tesla, 45 Tesla or 50 Tesla, etc.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member generates sufficient repulsive force for the magnetic particles, ensures the smooth formation of the convex portion 723a, and maintains the thickness of the convex portion 723a after etching to form a suitable within the scope of micro-nano structures. To avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient thickness of the convex portion 723a, the substrate may not be etched subsequently, resulting in failure to process the micro-nano structure; or, causing the convex portion 723a to be too thick, which may result in The subsequent etching of micro-nano structures is too deep.

The viscosity range of the colloid 721 of the original glue layer 720 is between 1 Pascal second (Pa·s) and 00 Pascal second (Pa·s). For example, the viscosity of the colloid 721 of the original glue layer 720 is 1 Pascal second, 5 Pascal second, 10 Pascal second, 20 Pascal second, Pascal second, 500 Pascal second, 2000 Pascal second, 4000 Pascal second, 6000 Pascal second, 8000 Pascal second, 00 Pascal seconds etc.

The viscosity of the colloid 721 of the original glue layer 720 is within the above range, which enables the convex portion 723a to be formed smoothly, and the thickness is maintained within a range that can be etched into a pattern. This is to avoid failure in forming the convex portion 723a, or even if the convex portion 723a is formed, the thickness of the convex portion 723a is inappropriate.

In this embodiment, the mask piece is opposite to the original glue layer 720 of the substrate 700 . Specifically, the mask piece is opposed to the surface of the original glue layer 720 away from the base 710 , so that the distance between the mask piece and the original glue layer 720 is more precise. This allows the magnetic repulsive force to better act on the magnetic particles, so that the convex portion 723a is quickly formed, thereby speeding up the production progress.

In Figure 6a, since the magnetic field intensity of the shielding area 106 (first area 101) of the mask 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the diamagnetic particles 726 in the original glue layer 720 are affected by the first After the repulsive force acts, the diamagnetic particles 726 in the area corresponding to the shielding area 106 on the original glue layer 720 move to the area corresponding to the hollow area 105 with a weak magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven. Move, so that the area corresponding to the original glue layer 720 and the shielding area 106 is thinned to form a spacer area 724, and the area corresponding to the original glue layer 720 and the hollow area 105 is convex in a direction away from the base 710, forming a convex portion 723a (mask portion 723 ), and then the original glue layer 720 is formed into a patterned mask layer 725.

In Figure 6b, since the magnetic field intensity of the protrusions 204 (first area 101) of the mask 200 is greater than the magnetic field intensity of the recessed portion 203 (second area 102), the diamagnetic particles 726 in the original glue layer 720 are subject to the first repulsion. After the force acts, the diamagnetic particles 726 in the area corresponding to the protrusions 204 on the original colloid layer 720 move to the area corresponding to the concave portion 203 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move. The area of the original glue layer 720 corresponding to the protrusion 204 is thinned to form the spacer area 724, and the portion of the original glue layer 720 corresponding to the recessed portion 203 is convex in a direction away from the base 710, forming a convex portion 723a (mask portion 723), and then The original glue layer 720 is formed into a patterned mask layer 725 .

In Figure 6c, since the magnetic field intensity of the shielding area 311 (the first area 101) of the mask 300 is greater than the magnetic field intensity of the hollow area 312 (the second area 102), the diamagnetic particles 726 in the original glue layer 720 are affected by the first After the repulsive force acts, the diamagnetic particles 726 in the area corresponding to the shielding area 311 on the original glue layer 720 move to the area corresponding to the hollow area 312 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven. Move, so that the area corresponding to the original glue layer 720 and the shielding area 311 becomes thinner to form a spacer area 724, and the part corresponding to the original glue layer 720 and the hollow area 312 bulges away from the base 710 to form a convex portion 723a, thereby making the original glue Layer 720 forms patterned mask layer 725.

In Figure 6d, since the electromagnetic component 420 of the mask component 400 generates a magnetic field after being energized, the mask plate 410 is magnetic, and the magnetic field intensity of the protrusion 411 (first area 101) is greater than that of the recess 412 (second area 102). Therefore, after the diamagnetic particles 726 in the original glue layer 720 are affected by the first repulsive force, the diamagnetic particles 726 in the area corresponding to the protrusions 411 on the original glue layer 720 move toward the area corresponding to the concave portion 412 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original glue layer 720 and the protrusion 411 becomes thinner to form a separation area 724, and the parts corresponding to the original glue layer 720 and the recess 412 move away from each other. The base 710 is convex in a direction to form a convex portion 723a (mask portion 723), and then the original glue layer 720 forms a patterned mask layer 725.

In Figure 6e, since the electromagnetic component 520 of the mask component 500 generates a magnetic field after being energized, the mask plate 510 is magnetic, and the magnetic field intensity of the shielding area 511 (first area 101) is greater than the hollow area 512 (second area 102) Therefore, after the diamagnetic particles 726 in the original glue layer 720 are affected by the first repulsive force, the diamagnetic particles 726 in the area corresponding to the shielding area 511 on the original glue layer 720 will move towards the hollow area 512 corresponding to the weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original glue layer 720 and the shielding area 511 becomes thinner to form a spacer area 724. The original glue layer 720 corresponds to the hollow area 512. The portion is convex in a direction away from the base 710 to form a convex portion 723a (mask portion 723), and then the original glue layer 720 forms a patterned mask layer 725.

In Figure 6f, since the electromagnetic component 620 of the mask component 600 generates a magnetic field after being energized, the mask plate 610 becomes magnetic, and the magnetic field intensity of the first region 101 is greater than the magnetic field intensity of the second region 102, so the diamagnetic particles 726 are affected by After the first repulsive force acts, the diamagnetic particles 726 in the area corresponding to the first area 101 on the original glue layer 720 move to the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the The corresponding colloid 721 moves so that the area of the original glue layer 720 corresponding to the first area 101 becomes thinner to form a spacer area 724, and the portion of the original glue layer 720 corresponding to the second area 102 bulges away from the base 710 to form a convex portion. 723a (mask portion 723), and then the original glue layer 720 is formed into a patterned mask layer 725.

Referring to FIG. 7a and FIG. 7b , FIG. 7a and FIG. 7b are another schematic structural diagram of the mask member and the substrate facing each other in the manufacturing method of the micro-nano layer structure shown in FIG. 2 . In this embodiment, the mask component in Figure 7a is the mask component in Figure 3a, and the mask component in Figure 7b The piece is the mask piece in Figure 3f. In other embodiments, the mask member located above the substrate 700 may also be the mask member shown in any one of FIGS. 3b to 3e . The mask component located under the substrate 700 may also be the mask component shown in any one of FIG. 3b to FIG. 3e.

Referring to Figures 8a and 8b, Figures 8a and 8b are schematic diagrams corresponding to the mask member in Figures 7a and 7b using a magnetic field to form a mask portion on the substrate.

In another embodiment, the number of mask members is two; the magnetic particles are diamagnetic particles. Step S12 specifically includes: placing the mask piece opposite to the substrate, and the magnetic force in the first area drives the magnetic particles corresponding to the first area to move. The step includes: placing the substrate between the two mask pieces, so that the original glue layer Opposite to one of the mask parts, the base is opposite to the other of the mask parts; the first repulsive force of the first area of one of the mask parts, and the second repulsive force of the first area of the other mask part, drive The magnetic particles corresponding to the first area move.

Although the magnetic field intensity in the second regions 102 of the two masks is small, it is possible that the above-mentioned second magnetic force acting on the diamagnetic particles 726 may be generated. The second region 102 of one mask has a strong influence on the original glue layer 720 The third repulsive force generated by the diamagnetic particles 726 in the other mask member generates a fourth repulsive force on the diamagnetic particles 726 in the original glue layer 720 . The second magnetic force includes the third repulsive force and The fourth repulsive force. However, the third repulsive force is much smaller than the first repulsive force, and the fourth repulsive force is much smaller than the second repulsive force. The third repulsive force and the fourth repulsive force can approach 0. The first repulsive force, the second repulsive force, and the third repulsive force The repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726 corresponding to the first region 101 can quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times of the third repulsive force, and the second repulsive force is between 5 times and 200 times of the fourth repulsive force.

In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., the third repulsive force, and the second repulsive force is the fourth repulsive force. 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc.

The first repulsive force and the second repulsive force drive the diamagnetic particles 726 to shift, so that the original glue layer 720 forms convex portions 723a and concave portions, so that the original glue layer 720 forms a patterned mask layer 725, and the convex portions 723a are the masks. Membrane part 723. That is to say, the magnetic particles 722 at this time are diamagnetic particles 726, the first magnetic force includes the first repulsive force and the second repulsive force, and the convex portion 723a is formed in the area of the original glue layer 720 corresponding to the second area 102.

Since the magnetic particles are diamagnetic particles 726, the magnetic field of the mask generates a first repulsive force and a second repulsive force on the diamagnetic particles 726 located therein. Since the magnetic field intensity of the first area 101 of the mask is greater than the magnetic field intensity of the second area 102, after the diamagnetic particles 726 are acted upon by the first repulsive force and the second repulsive force, the original glue layer 720 corresponds to the first area 101. The diamagnetic particles 726 in the area move to the area corresponding to the second area 102 with a weaker magnetic field. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the original glue layer 720 corresponds to the first area 101. The area of the original glue layer 720 is thinned to form the spacer area 724, and the portion of the original glue layer 720 corresponding to the second area 102 is convex in a direction away from the base 710 to form a convex portion 723a, thereby forming the patterned mask layer 725 of the original glue layer 720.

Step S12 is more specifically as follows: the substrate 700 is placed between two mask parts, so that the original glue layer 720 of the substrate 700 faces one of the mask parts, and the base body 710 of the substrate 700 faces the other mask part. Then move both mask parts toward the substrate 700. When the distance between the mask part located above the substrate 700 and the substrate 700 is the first preset distance, stop moving the upper mask part; when the distance between the mask part located above the substrate 700 is the first preset distance; When the distance between the lower mask component and the substrate 700 is the second preset distance, the movement of the mask component located below the substrate 700 is stopped. So that the first region 101 of one mask generates a first repulsive force on the diamagnetic particles in the original glue layer 720; the first region 101 of the other mask generates a second repulsive force on the diamagnetic particles in the original glue layer 720. Repulsive force; the first repulsive force and the second repulsive force drive the diamagnetic particles to shift, so that the area of the original glue layer 720 corresponding to the second area 102 forms a convex portion 723a, so that the original glue layer 720 forms a patterned mask layer 725 .

The first preset distance between the mask member and the substrate 700 opposite to the original glue layer 720 is determined based on the height of the subsequently formed convex portion 723a, and is set based on the fact that the convex portion 723a does not contact the mask member. That is, the first preset distance between the mask member located above the substrate 700 and the substrate 700 in the figure is determined based on the height of the convex portion 723a. The first preset distance here refers to: the base 710 faces the original glue layer. The distance between the surface of the mask 720 and the surface of the mask facing the substrate 700 . For example, the height of the convex portion 723a is 3 millimeters, specifically, the distance between the highest point of the convex portion 723a and the surface of the base 710 facing the original glue layer 720 is 3 millimeters. Then, it is sufficient to move the upper mask member to a distance of more than 3 mm from the substrate 700 , which may be specifically set to 4 mm, 5 mm, 7 mm, etc.

The second preset distance between the mask member opposite to the base body 710 and the substrate 700 is based on the condition that the base body 710 is not in contact with the mask member. That is to say, the second preset distance between the mask member located below the substrate 700 and the substrate 700 is subject to the fact that the two do not contact. The second preset distance here refers to the distance between the surface of the base 710 facing away from the original glue layer 720 and the surface of the mask member located below the substrate 700 facing the substrate 700 . For easy control, set the second preset distance to 2mm, 3mm, 4mm, etc.

In this embodiment, one mask piece is opposite to the original glue layer 720 of the substrate 700. Specifically, one mask piece is opposite to the surface of the original glue layer 720 away from the base 710, and the other mask piece is opposite to the base 710 of the substrate 700. Specifically, another mask piece is opposite to the surface of the base 710 facing away from the original glue layer 720, and the first areas 101 of the two mask pieces are opposite, and the second areas 102 of the two mask pieces are opposite, so that the two mask pieces are opposite to each other. Each mask member can produce a repulsive force on the diamagnetic particles 726. The two work together to produce a stronger repulsive force, allowing the diamagnetic particles to move faster from the area corresponding to the first area 101 to the area corresponding to the second area 102. area, so that the convex portion 723a can be formed quickly, thereby speeding up the production schedule.

In Figure 8a, since the magnetic field intensity of the shielding area 106 (first area 101) of the two masks 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the diamagnetic particles 726 in the original glue layer 720 are affected by After the first repulsive force exerted by the upper mask member 100 and the second repulsive force exerted by the lower mask member 100, the inverse direction of the area on the original glue layer 720 corresponding to the shielding areas 106 of the two mask members 100 is The magnetic particles 726 move to the areas corresponding to the hollow areas 105 of the two mask parts 100 with weaker magnetic fields. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the original glue layer 720 and the two The area corresponding to the shielding area 106 of the mask member 100 is thinned to form a spacer area 724, and the portion of the original glue layer 720 corresponding to the hollow area 105 of the two mask members 100 is convex in a direction away from the base 710, forming a convex portion 723a, and then The original glue layer 720 is formed into a patterned mask layer 725 .

In Figure 8b, after the electromagnetic component 620 is energized, the mask plate 610 is magnetized and forms a magnetic field. The magnetic field intensity in the first region 101 of the mask component 600 is greater than the magnetic field intensity in the second region 102. Therefore, the diamagnetic particles in the original glue layer 720 726 After receiving the first repulsive force exerted by the upper mask member 600 and the second repulsive force exerted by the lower mask member 600, the original glue layer 720 corresponds to the first area 101 of the two mask members 600. The diamagnetic particles 726 in the area move to the area corresponding to the second area 102 of the two mask members 600 with weaker magnetic fields. During the movement of the diamagnetic particles 726, the corresponding colloid 721 will be driven to move, so that the original glue layer 720 The area corresponding to the first area 101 of the two mask members 600 is thinned to form a spacer area 724. The area of the original glue layer 720 corresponding to the second area 102 of the two mask members 600 is convex in a direction away from the base 710. The convex portion 723a is formed, and the original glue layer 720 is formed into a patterned mask layer 725.

Referring to Figure 9a, Figure 9b, Figure 9c, Figure 9d, Figure 9e and Figure 9f, Figure 9a to Figure 9f are another structural schematic diagram of the mask member and the substrate facing each other in the manufacturing method of the micro-nano layer structure shown in Figure 2 . The mask components in FIGS. 9a to 9f correspond to the mask components in FIGS. 3a to 3f respectively.

Referring to Figures 10a, 10b, 10c, 10d, 10e and 10f, Figures 10a and 10f are schematic diagrams corresponding to the mask member in Figures 9a to 9f using a magnetic field to form a mask portion on the substrate.

In yet another embodiment, the magnetic particles 722 are paramagnetic particles 727 . Step S12 specifically includes: the first area 101 generates an adsorption force on the paramagnetic particles 727, and the adsorption force drives the paramagnetic particles 727 to move to the area corresponding to the first area 101, forming a mask portion 723 corresponding to the first area 101, and A spacer area 724 corresponding to the second area 102 is formed. Among them, the mask portion 723 is a convex portion 723a that protrudes away from the base body, and the spacing area 724 is a recessed portion that is concave toward the base body. The thickness of the convex part 723a is larger than that of the recessed part.

The adsorption force generated by the first region 101 is called the first adsorption force. The first adsorption force drives the paramagnetic particles 727 to shift, so that the original glue layer 720 forms a convex part 723a and a concave part. The convex part 723a is the mask part 723. So that the original glue layer 720 forms a patterned mask layer 725. That is to say, at this time, the magnetic particles 722 are paramagnetic particles 727, the magnetic force generated in the first region 101 is called the first magnetic force, the first magnetic force is the first adsorption force, and the convex portion 723a is formed between the original glue layer 720 and the first adsorption force. The area corresponding to the first area 101.

Although the magnetic field intensity of the second region 102 is small, it may also generate a second magnetic force acting on the paramagnetic particles 727. The second magnetic force is the second adsorption force, but the second adsorption force will be much smaller than the first adsorption force. , and the second adsorption force approaches 0. This allows the paramagnetic particles 727 corresponding to the second region 102 to quickly move to correspond to the first region 101, thereby speeding up the preparation efficiency.

The first adsorption force is between 5 times and 200 times of the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., than the second adsorption force.

It can be understood that the adsorption force is greatest at the center of the first region 101, and the paramagnetic particles 727 will tend to move to the position corresponding to the center of the first region 101. Therefore, the cross-section of the finally formed convex portion 723a is from the middle The shape gradually decreases in height to both sides, similar to a convex arc.

Step S12 more specifically includes: placing the substrate 700 under the mask, so that the original glue layer 720 is located under the mask. Then, move the mask member toward the substrate 700. When the distance between the mask member and the substrate 700 is the preset distance, stop moving the mask member; so that the first region 101 is sensitive to the paramagnetic particles in the original glue layer 720. The first adsorption force is generated; the first adsorption force drives the diamagnetic particles to shift, so that the area of the original glue layer 720 corresponding to the first area 101 forms a convex portion 723a, so that the original glue layer 720 forms the patterned mask layer 725.

The preset distance is determined based on the height of the subsequently formed convex portion 723a, and is set based on the fact that the convex portion 723a does not contact the mask member. For the specific preset distance, refer to the above embodiment and will not be described again.

Since the magnetic particles are paramagnetic particles 727, the magnetic field of the mask generates a first adsorption force on the paramagnetic particles 727 located therein. Since the magnetic field intensity of the first area 101 of the mask is greater than the magnetic field intensity of the second area 102, after the paramagnetic particles 727 are affected by the first adsorption force, the paramagnetic particles in the area corresponding to the second area 102 on the original glue layer 720 727, move toward the area corresponding to the first area 101 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the area corresponding to the original glue layer 720 and the second area 102 becomes thinner and formed. In the spacer area 724 , the portion of the original glue layer 720 corresponding to the first region 101 is convex in a direction away from the base 710 , forming a convex portion 723 a , thereby causing the original glue layer 720 to form a patterned mask layer 725 .

The magnetic induction intensity of the mask is within the above range, which can ensure that the mask has sufficient adsorption force to the magnetic particles, ensure the smooth formation of the convex portion 723a, and maintain the thickness of the convex portion 723a after etching to form a suitable within the scope of micro-nano structures. To avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient thickness of the convex portion 723a, the substrate may not be etched subsequently, resulting in failure to process the micro-nano structure; or, causing the convex portion 723a to be too thick, which may result in The subsequent etching of micro-nano structures is too deep.

In this embodiment, the mask piece is opposite to the original glue layer 720 of the substrate 700 . Specifically, the mask piece is opposed to the surface of the original glue layer 720 away from the base 710 , so that the distance between the mask piece and the original glue layer 720 is more precise. However, the mask piece is not in contact with the original glue layer, so that the adsorption force can better act on the magnetic particles, so that the convex portion 723a can be formed quickly, thereby speeding up the production progress.

In Figure 10a, since the magnetic field intensity of the shielding area 106 (first area 101) of the mask 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the paramagnetic particles 727 in the original glue layer 720 are affected by the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 105 on the original glue layer 720 move to the area corresponding to the shielding area 106 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven. Move, so that the area corresponding to the original glue layer 720 and the hollow area 105 becomes thinner to form a spacer area 724, and the part corresponding to the original glue layer 720 and the shielding area 106 bulges away from the base 710 to form a convex portion 723a, thereby making the original glue Layer 720 forms patterned mask layer 725.

In Figure 10b, since the magnetic field intensity of the protrusions 204 (first area 101) of the mask 200 is greater than the magnetic field intensity of the recessed portion 203 (second area 102), the paramagnetic particles 727 in the original glue layer 720 are subject to the first adsorption. After the force acts, the paramagnetic particles 727 in the area corresponding to the concave portion 203 on the original colloid layer 720 move to the area corresponding to the protrusion 204 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move. The area of the original glue layer 720 corresponding to the recessed portion 203 is thinned to form a spacer area 724, and the portion of the original glue layer 720 corresponding to the protrusion 204 is convex in a direction away from the base 710 to form a convex portion 723a, thereby forming the original glue layer 720. Patterned mask layer 725.

In Figure 10c, since the magnetic field intensity of the shielding area 311 (the first area 101) of the mask 300 is greater than the magnetic field intensity of the hollow area 312 (the second area 102), the paramagnetic particles 727 in the original glue layer 720 are affected by the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 312 on the original glue layer 720 move to the area corresponding to the shielding area 311 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven. Move, so that the area corresponding to the original glue layer 720 and the hollow area 312 is thinned to form a spacer area 724, and the area corresponding to the original glue layer 720 and the shielding area 311 is moved away from the base 710 The protrusions 723a are formed, and the original glue layer 720 forms the patterned mask layer 725.

In Figure 10d, since the magnetic field intensity of the protrusions 411 (first area 101) of the mask 400 is greater than the magnetic field intensity of the recessed portion 412 (second area 102), the paramagnetic particles 727 in the original glue layer 720 are subject to the first adsorption. After the force acts, the paramagnetic particles 727 in the area corresponding to the concave portion 412 on the original colloid layer 720 move to the area corresponding to the protrusion 411 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move. The area corresponding to the original glue layer 720 and the recessed portion 412 is thinned to form the spacer area 724, and the portion of the original glue layer 720 corresponding to the protrusion 411 is convex in a direction away from the base 710 to form the convex portion 723a, thereby forming the original glue layer 720. Patterned mask layer 725.

In Figure 10e, since the magnetic field intensity of the shielding area 511 (the first area 101) of the mask 500 is greater than the magnetic field intensity of the hollow area 512 (the second area 102), the paramagnetic particles 727 in the original glue layer 720 are affected by the first After the adsorption force acts, the paramagnetic particles 727 in the area corresponding to the hollow area 512 on the original glue layer 720 move to the area corresponding to the shielding area 511 with a stronger magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven. Move, so that the area corresponding to the original glue layer 720 and the hollow area 512 becomes thinner to form a spacer area 724, and the part corresponding to the original glue layer 720 and the shielding area 511 bulges away from the base 710 to form a convex portion 723a, thereby making the original glue Layer 720 forms patterned mask layer 725.

In Figure 10f, since the magnetic field intensity in the first region 101 of the mask 600 is greater than the magnetic field intensity in the second region 102, the paramagnetic particles 727 in the original glue layer 720 are affected by the first adsorption force. The paramagnetic particles 727 in the area corresponding to the second area 102 move to the area corresponding to the first area 101 with a weaker magnetic field. During the movement of the paramagnetic particles 727, the corresponding colloid 721 will be driven to move, so that the original colloid layer 720 The area corresponding to the second area 102 is thinned to form a spacer area 724, and the portion of the original glue layer 720 corresponding to the first area 101 bulges away from the base 710 to form a convex portion 723a, thereby forming a patterned mask on the original glue layer 720. Film layer 725.

Referring to Figures 11a and 11b, Figures 11a and 11b are yet another structural schematic diagram of the mask member facing the substrate in the manufacturing method of the micro-nano layer structure shown in Figure 2. The mask components in Figures 11a and 11b correspond to the mask components in Figures 3a and 3b respectively. In other embodiments, the mask members in FIGS. 3c to 3f may also be used.

Referring to Figures 12a and 12b, Figures 12a and 12b are schematic diagrams corresponding to the mask member in Figures 11a and 11b using a magnetic field to form a mask portion on the substrate.

In yet another embodiment of the present application, the substrate 700a includes a base 710a and an original glue layer 720a provided on the base 710a. The original glue layer 720a includes a colloid 721a and magnetic particles 722a. The magnetic particles 722a are diamagnetic particles or paramagnetic particles. Magnetic particles. Magnetic particles 722a are doped in colloid 721a. Diamagnetic particles are made of one or more of gold, silver, copper and lead. When diamagnetic particles are in a magnetic field, they will escape to areas with weaker magnetic fields or areas with no magnetic field. Paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt, and nickel. When paramagnetic particles are located in a magnetic field, they will tend to move toward areas with stronger magnetic fields.

That is to say, the structure of the substrate 700a is basically the same as that of the substrate 700 in the above embodiment. The difference is that the viscosity range of the original glue layer 700a is different, which will be described in detail below.

Step S12 specifically includes: patterning the original glue layer 720a, the first region 101 generates a repulsive force on the diamagnetic particles 726a, and the repulsive force drives the diamagnetic particles 726a to move to the region corresponding to the second region 102, forming a pattern corresponding to the second region 102. The mask portion 723b is formed, and the spacer region 724b corresponding to the first region 101 is formed. The mask portion 723b is a magnetic particle gathering portion, and the spacing area 724b is a magnetic particle sparse portion; the magnetic particle density at the magnetic particle gathering portion is greater than the magnetic particle density at the magnetic particle sparse portion. When the mask is opposite to the substrate 700a, the first magnetic force generated by the first region 101 is the first repulsive force; the second magnetic force generated by the second region 102 is the second repulsive force, where the second repulsive force is smaller than the first repulsive force. force, and the second repulsive force approaches 0.

The repulsive force generated in the first region 101 is called the first repulsive force. The first repulsive force drives the diamagnetic particles 726a to shift, so that the original glue layer 720a forms a mask part 723b (magnetic particle gathering part) and a spacer area 724b (magnetic particle aggregation part). sparse part), so that the original glue layer 720a forms patterned mask layer 725a. That is to say, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force is the first repulsive force, and the mask portion 723b is formed in the area of the original glue layer 720a corresponding to the second area 102. Compared with the original original glue layer 720a, the thickness of the mask portion 723b remains unchanged, but the number of the diamagnetic particles 726a increases. That is to say, the diamagnetic particles 726a gather at the mask portion 723b.

Although the magnetic field strength of the second region 102 is small, it is possible to generate a second magnetic force acting on the diamagnetic particles 726a. The second magnetic force is a second repulsive force, where the second repulsive force is smaller than the first repulsive force. And the second repulsive force can approach 0. This allows the diamagnetic particles 726a corresponding to the first region 101 to quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times of the second repulsive force. In this embodiment, the first repulsive force is 100 times the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., the second repulsive force.

Step S12 more specifically includes: placing the substrate 700a under the mask member, so that the original glue layer 720a is located under the mask member. Then, move the mask member toward the direction of the substrate 700a. When the distance between the mask member and the substrate 700a is the preset distance, stop moving the mask member; so that the first region 101 can react with the diamagnetic particles in the original glue layer 720a. A first repulsive force is generated; the first repulsive force drives the diamagnetic particles to shift, so that the area of the original glue layer 720a corresponding to the second region 102 forms a mask portion 723b, so that the original glue layer 720a forms a patterned mask layer 725a.

The preset distance is determined based on the height of the subsequently formed mask portion 723b, and is set based on the fact that the mask portion 723b is not in contact with the mask member. That is, the preset distance between the mask member located above the substrate 700a and the substrate 700a in the figure is determined based on the height of the mask portion 723b. The preset distance here refers to the surface of the base 710a facing the original glue layer 720a. and the surface of the mask member facing the substrate 700a. For example, the height of the mask portion 723b is 3 mm. Specifically, the distance between the surface of the mask portion 723b facing away from the base 710a and the surface of the base 710a facing the original glue layer 720a is 3 mm. Then, it is sufficient to move the upper mask member a to a distance of more than 3 mm from the substrate 700a. Specifically, it may be set to 4 mm, 5 mm, 7 mm, etc.

In this embodiment, the magnetic particles are diamagnetic particles 726a, and the magnetic field of the mask generates a first repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field intensity in the first area 101 of the mask is greater than the magnetic field intensity in the second area 102, after the diamagnetic particles 726a are acted upon by the first repulsive force, the diamagnetic particles in the area corresponding to the first area 101 on the original glue layer 720a 726a, moving to the area corresponding to the second area 102 with a weaker magnetic field, the number of diamagnetic particles 726a in the original glue layer 720a and the area corresponding to the first area 101 decreases, forming a spacer area 724b, the original glue layer 720a and the second area 102 The diamagnetic particles 726a in the corresponding area gather to form a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a. The number of diamagnetic particles 726a in the spacing area 724b is small, and the arrangement density is low, and there is even no diamagnetic particle 726a. The thickness of the mask portion 723b is equal to the thickness of the spacer region 724b.

In this embodiment, the magnetic induction intensity range of the mask is between 0.01 Tesla and 5 Tesla. For example, the magnetic induction intensity of the mask is 0.01 Tesla, 0.5 Tesla, 1 Tesla, 2 Tesla, 2.5 Tesla, 3 Tesla, 4 Tesla or 5 Tesla, etc.

The magnetic induction intensity of the mask is within the above range, which can ensure that the mask has sufficient adsorption force for the magnetic particles, ensures the smooth formation of the mask portion 723b, and can also increase the density of the diamagnetic particles 726a of the mask portion 723b. Keep it within the range that can form a suitable micro-nano structure after etching. To avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient density of diamagnetic particles 726a at the mask portion 723b, the substrate may not be etched subsequently, resulting in failure to process the micro-nano structure; or, resulting in the mask being unable to be processed into a micro-nano structure If the diamagnetic particles 726a at the portion 723b are too dense, the subsequently etched micro-nano structure may be too deep.

The viscosity range of the colloid 721a of the original glue layer 720a is between 0.001 Pascal seconds (Pa·s) and Pascal seconds (Pa·s). For example, the viscosity of the colloid 721a of the original glue layer 720a is 0.001 Pascal seconds, 5 Pascal seconds, 10 Pascal seconds, and 20 Pascal seconds. Card seconds, 30 Pascal seconds, 40 Pascal seconds, 50 Pascal seconds, 60 Pascal seconds, 70 Pascal seconds, 80 Pascal seconds, Pascal seconds, etc.

The viscosity of the colloid 721a of the original glue layer 720a is within the above range, which enables the mask portion 723b to be formed smoothly, and the density of the diamagnetic particles 726a is maintained within a range that can be etched into a pattern. This avoids failure in forming the mask portion 723b, or even if the mask portion 723b is formed, the density of magnetic particles in the mask portion 723b is inappropriate.

In this embodiment, the density of diamagnetic particles 726a is used to distinguish the mask part 723b and the spacer region 724b. The thickness of the mask part 723b and the spacer region 724b is equal, and both are the same as the original glue layer 720a before the mask part 723b and the spacer region 724b are formed. The thickness is consistent. In addition, during the process of forming the mask portion 723b, the mask piece is not in contact with the original glue layer 720a, which increases the cleanliness of the product and improves the yield rate.

In Figure 12a, since the magnetic field intensity of the shielding area 106 (first area 101) of the mask 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the diamagnetic particles 726a in the original glue layer 720a are affected by the first After the repulsive force acts, the diamagnetic particles 726a on the original glue layer 720a in the area corresponding to the shielding area 106 move to the area corresponding to the hollow area 105 with a weaker magnetic field, so that the original glue layer 720a and the area corresponding to the shielding area 106 are reversed. The number of magnetic particles 726a decreases, thereby forming a spacer area 724b. The number of diamagnetic particles 726a increases in the area corresponding to the original glue layer 720a and the hollow area 105, thereby forming a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a. .

In Figure 12b, since the magnetic field intensity of the protrusions 204 (first area 101) of the mask 200 is greater than the magnetic field intensity of the recessed portion 203 (second area 102), the diamagnetic particles 726a in the original glue layer 720a are subject to the first repulsion. After the force acts, the diamagnetic particles 726a in the area of the original glue layer 720a corresponding to the protrusions 204 move to the area corresponding to the concave portion 203 with a weaker magnetic field, so that the area of the original glue layer 720a corresponding to the protrusions 204 is diamagnetic. The number of diamagnetic particles 726a decreases, thereby forming a spacer area 724b. The number of diamagnetic particles 726a increases in the area of the original glue layer 720a corresponding to the recess 203, thereby forming a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a.

Referring to Figures 13a and 13b, Figures 13a and 13b are another structural schematic diagram of the mask member facing the substrate in the manufacturing method of the micro-nano layer structure shown in Figure 2. In this embodiment, the mask components in FIG. 13a and FIG. 13b correspond to the mask components in FIG. 3a and FIG. 3b respectively. In other embodiments, the mask members in FIGS. 3c to 3f may also be used.

Referring to Figures 14a and 14b, Figures 14a and 14b are schematic diagrams corresponding to the mask member in Figures 13a and 13b using a magnetic field to form a mask portion on the substrate.

In another embodiment of the present application, the number of mask members is two; the magnetic particles 722a are diamagnetic particles 726a. Step S12 specifically includes: placing the mask piece opposite to the substrate, and the magnetic force in the first area drives the magnetic particles corresponding to the first area to move. The step includes: placing the substrate between the two mask pieces, so that the original glue The layer is opposed to one of the mask members, and the base is opposed to the other mask member; the first repulsive force of the first area of one of the mask members, and the second repulsive force of the first area of the other mask member, The magnetic particles corresponding to the first region are driven to move.

Although the magnetic field intensity in the second regions 102 of the two masks is small, it is possible that a second magnetic force acting on the diamagnetic particles 726a may be generated. The third repulsive force generated by the diamagnetic particles 726a, and the second region 102 of the other mask member generates a fourth repulsive force on the diamagnetic particles 726a in the original glue layer 720a. The second magnetic force includes the third repulsive force and the third repulsive force. Four repulsive forces. However, the third repulsive force is much smaller than the first repulsive force, and the fourth repulsive force is much smaller than the second repulsive force. The third repulsive force and the fourth repulsive force can approach 0. The first repulsive force, the second repulsive force, and the third repulsive force The repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726a corresponding to the first region 101 can quickly move to correspond to the second region 102, thereby speeding up the preparation efficiency. The first repulsive force is between 5 times and 200 times of the third repulsive force, and the second repulsive force is between 5 times and 200 times of the fourth repulsive force.

In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times the third repulsive force. times, 200 times, etc., the second repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. of the fourth repulsive force.

The first repulsive force and the second repulsive force drive the diamagnetic particles 726a to shift, so that the original glue layer 720a forms a mask part 723b (magnetic particle dense part) and a spacer area 724b (magnetic particle sparse part), so that the original glue layer 720a A patterned mask layer 725a is formed. That is to say, the magnetic particles 722a at this time are diamagnetic particles 726a, the first magnetic force includes the first repulsive force and the second repulsive force, and the mask portion 723b is formed in the area of the original glue layer 720a corresponding to the second area 102. Compared with the original original glue layer 720a, the thickness of the mask portion 723b remains unchanged, but the number of the diamagnetic particles 726a increases. That is to say, the diamagnetic particles 726a gather at the mask portion 723b.

Specifically, since the magnetic particles are diamagnetic particles 726a, the magnetic field of the mask generates a first repulsive force and a second repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field intensity of the first area 101 of the mask is greater than the magnetic field intensity of the second area 102, after the diamagnetic particles 726a are acted upon by the first repulsive force and the second repulsive force, the original glue layer 720a corresponds to the first area 101. The diamagnetic particles 726a in the area move to the area corresponding to the second area 102 with a weaker magnetic field. The number of diamagnetic particles 726a in the original glue layer 720a and the area corresponding to the first area 101 decreases, forming a separation area 724b. The original glue layer 720a The diamagnetic particles 726a in the area corresponding to the second area 102 gather to form the mask portion 723b, and then the original glue layer 720a forms the patterned mask layer 725a. The number of diamagnetic particles 726a in the spacing area 724b is small, and the arrangement density is low, and there is even no diamagnetic particle 726a.

The more specific steps of step S12 are as follows: place the substrate 700a between two mask parts, so that the original glue layer 720a of the substrate 700a faces one of the mask parts, and the base body 710a of the substrate 700a faces the other mask part. Move both mask members toward the substrate 700a. When the distance between the mask member located above the substrate 700a and the substrate 700a is the first preset distance, stop moving the upper mask member; when the mask member located below the substrate 700a When the distance between the mask member and the substrate 700a is the second preset distance, stop moving the mask member located below the substrate 700a; so that the first region 101 of the upper mask member is opposite to the reverse direction of the original glue layer 720a. The magnetic particles generate a first repulsive force; the first region 101 of the other mask below generates a second repulsive force on the diamagnetic particles in the original glue layer 720a; the first repulsive force and the second repulsive force drive the diamagnetic particles to move. position, so that the area of the original glue layer 720a corresponding to the second region 102 forms the mask portion 723b, so that the original glue layer 720a forms the patterned mask layer 725a.

The first preset distance between the mask member and the substrate 700a opposite to the original glue layer 720a is determined based on the height of the formed mask portion 723b, and is set based on the fact that the mask portion 723b is not in contact with the mask member. That is, the first preset distance between the mask member located above the substrate 700 and the substrate 700a in the figure is determined based on the height of the mask portion 723b. The first preset distance here refers to: the base 710a faces the original glue. The distance between the surface of layer 720a and the surface of the mask facing substrate 700a. For example, the height of the mask portion 723b is 3 millimeters, specifically, the distance between the surface of the mask portion 723b away from the base 710a and the surface of the base 710a facing the original glue layer 720a is 3 millimeters. Then, it is sufficient to move the upper mask member to a distance of more than 3 mm from the substrate 700a. Specifically, it may be set to 4 mm, 5 mm, 7 mm, etc.

The second preset distance between the mask member opposite to the base body 710a and the substrate 700a is based on the condition that the base body 710a is not in contact with the mask member. That is to say, the second preset distance between the mask member located below the substrate 700a and the substrate 700a is based on the fact that the two do not contact. The second preset distance here refers to the distance between the surface of the base 710a facing away from the original glue layer 720a and the surface of the mask member located below the substrate 700a facing the substrate 700a. For easy control, set the second preset distance to 2mm, 3mm, 4mm, etc.

The magnetic induction intensity of the mask is within the above range, which can ensure that the mask has sufficient adsorption force for magnetic particles. This ensures the smooth formation of the mask portion 723b and keeps the density of the diamagnetic particles 726a in the mask portion 723b within a range that can form a suitable micro-nano structure after etching. To avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient density of diamagnetic particles 726a at the mask portion 723b, the substrate may not be etched subsequently, resulting in failure to process the micro-nano structure; or, resulting in the mask being unable to be processed into a micro-nano structure If the diamagnetic particles 726a at the portion 723b are too dense, the subsequently etched micro-nano structure may be too deep.

The viscosity range of the colloid 721a of the original glue layer 720a is between 0.001 Pascal seconds (Pa·s) and Pascal seconds (Pa·s). For example, the viscosity of the colloid 721a of the original glue layer 720a is 0.001 Pascal seconds, 5 Pascal seconds, 10 Pascal seconds, 20 Pascal seconds, 30 Pascal seconds, 40 Pascal seconds, 50 Pascal seconds, 60 Pascal seconds, 70 Pascal seconds, and 80 Pascal seconds. , Pascal seconds, etc.

In this embodiment, one mask piece is opposite to the original glue layer 720a of the substrate 700a. Specifically, one mask piece is opposite to the surface of the original glue layer 720a away from the base 710a, and the other mask piece is opposite to the base 710a of the substrate 700a. Specifically, another mask piece is opposite to the surface of the base 710a facing away from the original glue layer 720a, and the first areas 101 of the two mask pieces are opposite, and the second areas 102 of the two mask pieces are opposite, so that the two mask pieces are opposite to each other. Each mask member can produce a repulsive force on the diamagnetic particle 726a. The two work together to produce a stronger repulsive force, allowing the diamagnetic particle 726a to move faster from the area corresponding to the first area 101 to the second area 102. area, so that the mask portion 723b can be formed quickly, thereby speeding up the production schedule.

In Figure 14a, since the magnetic field intensity of the shielding area 106 (first area 101) of the mask 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the diamagnetic particles 726a in the original glue layer 720a are affected by the first After the repulsive force and the second repulsive force act, the diamagnetic particles 726a in the area corresponding to the shielding area 106 on the original glue layer 720a move to the area corresponding to the hollow area 105 with a weaker magnetic field, so that the original glue layer 720a is in contact with the shielding area. The number of diamagnetic particles 726a in the area corresponding to 106 decreases, thereby forming a spacer area 724b. The number of diamagnetic particles 726a in the area corresponding to the original glue layer 720a and the hollow area 105 increases, thereby forming a mask portion 723b, thereby forming a pattern on the original glue layer 720a. mask layer 725a.

In Figure 14b, since the magnetic field intensity of the protrusions 204 (first area 101) of the mask 200 is greater than the magnetic field intensity of the recessed portion 203 (second area 102), the diamagnetic particles 726a in the original glue layer 720a are subject to the first repulsion. After the force and the second repulsive force act, the diamagnetic particles 726a in the area corresponding to the protrusion 204 on the original glue layer 720a move to the area corresponding to the concave portion 203 with a weaker magnetic field, so that the original glue layer 720a corresponds to the protrusion 204 The number of diamagnetic particles 726a in the area corresponding to the original glue layer 720a and the recessed portion 203 is reduced, thereby forming a spacer area 724b. The number of diamagnetic particles 726a is increased in the area corresponding to the recessed portion 203 of the original glue layer 720a, thereby forming a mask portion 723b, and then the original glue layer 720a forms a patterned mask. Layer 725a.

Referring to Figures 15a and 15b, Figures 15a and 15b are yet another structural schematic diagram of the mask member facing the substrate in the manufacturing method of the micro-nano layer structure shown in Figure 2. The mask components in Figures 15a and 15b correspond to the mask components in Figures 3a and 3b respectively. In other embodiments, the mask members in FIGS. 3c to 3f may also be used.

Referring to Figures 16a and 16b, Figures 16a and 16b are schematic diagrams corresponding to the mask member in Figures 15a and 15b using a magnetic field to form a mask portion on the substrate.

In yet another embodiment of the present application, the magnetic particles 722a are paramagnetic particles 727a. Step S12 specifically includes: the first area 101 generates an adsorption force on the paramagnetic particles 727a, and the adsorption force drives the paramagnetic particles 727a to move to the area corresponding to the first area 101, forming a mask portion 723b corresponding to the first area 101, and A spacer area 724b corresponding to the second area 102 is formed.

The adsorption force generated by the first region 101 is called the first adsorption force. The first adsorption force drives the paramagnetic particles 727a to shift, so that the original glue layer 720a forms the mask portion 723b and the spacer area 724b, so that the original glue layer 720a forms a pattern. mask layer 725a. That is to say, the magnetic particles 722a at this time are paramagnetic particles 727a, the first magnetic force is the first adsorption force, and the mask portion 723b is shaped like It is formed in the area of the original glue layer 720a corresponding to the first area 101. Compared with the original original glue layer 720a, the thickness of the mask portion 723b remains unchanged, but the number of paramagnetic particles 727a increases. That is to say, the paramagnetic particles 727a gather at the mask portion 723b.

Although the magnetic field intensity in the second region 102 is small, it is possible to generate a second magnetic force acting on the paramagnetic particles 727a. The second magnetic force is the second adsorption force, but the second adsorption force is much smaller than the first adsorption force. And the second adsorption force approaches 0. This allows the paramagnetic particles 727a corresponding to the first region 101 to quickly move to correspond to the first region 101, thereby speeding up the preparation efficiency. The first adsorption force is between 5 times and 200 times of the second adsorption force. In this embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first adsorption force is 5 times, 10 times, 20 times, 30 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., than the second adsorption force.

Step S12 more specifically includes: placing the substrate 700a under the mask, and making the original glue layer 720a located under the mask. Then, move the mask member toward the direction of the substrate 700a. When the distance between the mask member and the substrate 700a is the preset distance, stop moving the mask member; so that the first region 101 can react with the diamagnetic particles in the original glue layer 720a. A first adsorption force is generated; the first adsorption force drives the diamagnetic particles to shift, so that the area of the original glue layer 720a corresponding to the first region 101 forms a mask portion 723b, so that the original glue layer 720a forms a patterned mask layer 725a.

The preset distance is determined based on the height of the subsequently formed mask portion 723b, and is set based on the fact that the mask portion 723b is not in contact with the mask member. The preset distance may be specifically set with reference to the above-mentioned embodiments, and will not be described again.

Since the magnetic particles are paramagnetic particles 727a, the magnetic field of the mask generates a first adsorption force on the paramagnetic particles 727a located therein. Since the magnetic field intensity in the first area 101 of the mask is greater than the magnetic field intensity in the second area 102, after the paramagnetic particles 727a are acted upon by the first adsorption force, the paramagnetic particles in the area corresponding to the second area 102 on the original glue layer 720a 727a, moving to the area corresponding to the first area 101 with a stronger magnetic field, the number of paramagnetic particles 727a in the area corresponding to the original glue layer 720a and the second area 102 decreases, forming a spacer area 724b, the original glue layer 720a and the first area 101 The paramagnetic particles 727a in the corresponding area gather to form a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a. The number of paramagnetic particles 727a in the spacer area 724b is small, and the arrangement density is low, and there is even no paramagnetic particle 727a.

The magnetic induction intensity of the mask is within the above range, which can ensure that the mask has sufficient adsorption force for the magnetic particles, ensures the smooth formation of the mask portion 723b, and can also increase the density of the paramagnetic particles 727a of the mask portion 723b. Keep it within the range that can form a suitable micro-nano structure after etching. To avoid inappropriate magnetic induction intensity of the mask, resulting in insufficient density of diamagnetic particles 726a at the mask portion 723b, the substrate may not be etched subsequently, resulting in failure to process the micro-nano structure; or, resulting in the mask being unable to be processed into a micro-nano structure If the diamagnetic particles 726a at the portion 723b are too dense, the subsequently etched micro-nano structure may be too deep.

The viscosity of the colloid 721a of the original glue layer 720a is within the above range, which enables the mask portion 723b to be formed smoothly, and the density of the paramagnetic particles 727a is maintained within a range that can be etched into a pattern. This avoids failure in forming the mask portion 723b, or even if the mask portion 723b is formed, the density of magnetic particles in the mask portion 723b is inappropriate.

In Figure 16a, since the magnetic field intensity of the shielding area 106 (first area 101) of the mask 100 is greater than the magnetic field intensity of the hollow area 105 (second area 102), the paramagnetic particles 727a in the original glue layer 720a are affected by the first After the adsorption force acts, the paramagnetic particles 727a in the area corresponding to the hollow area 105 on the original glue layer 720a move to the area corresponding to the shielding area 106 with a stronger magnetic field. Move, so that the number of paramagnetic particles 727a in the area corresponding to the original glue layer 720a and the hollow area 105 is reduced, thereby forming a spacer area 724b, and the number of paramagnetic particles 727a in the area corresponding to the original glue layer 720a and the shielding area 106 is increased, thereby forming a mask. portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a.

In Figure 16b, since the magnetic field intensity of the protrusions 204 (first area 101) of the mask 200 is greater than the magnetic field intensity of the recessed portion 203 (second area 102), the paramagnetic particles 727a in the original glue layer 720a are subject to the first adsorption After the force acts, the paramagnetic particles 727a in the area of the original glue layer 720a corresponding to the recessed portion 203 move to the area corresponding to the protrusion 204 with a stronger magnetic field, so that the paramagnetic particles 727a in the area of the original glue layer 720a corresponding to the recessed portion 203 are The number of paramagnetic particles 727a decreases, thereby forming spacers 724b, and the number of paramagnetic particles 727a increases in the area of the original glue layer 720a corresponding to the protrusion 204, thereby forming a mask portion 723b, and then the original glue layer 720a forms a patterned mask layer 725a.

Step S13: Using the patterned mask layer as a mask, etch the base body so that the base body forms a patterned dielectric layer. Specifically: etching the patterned mask layer so that the mask part is partially etched, all other parts except the mask part are etched, and the areas of the base body corresponding to other parts are etched, so that the base body forms a patterned medium layer. At this time, part of the mask portion still remains on the base 710 .

Referring to FIG. 17a, FIG. 17a is a schematic structural diagram of the patterned mask layer formed in FIGS. 6a to 6f, 8a to 8b, and 10a to 10f after being etched.

In one embodiment, step S13 specifically includes: etching the base 710 using the patterned mask layer 725 as a mask. Specifically, etching the entire patterned mask layer 725 forming the convex portion 723a. Because the patterned mask layer 725 includes a convex part 723a (mask part 723) and a recessed part (spacer area 724), and the thickness of the convex part 723a is greater than the thickness of the recessed part (spacer area 724). Under the premise of the same etching time, part of the convex part 723a is etched, and the spacer area 724 is completely etched (during etching, the thickness of the convex part 723a and the spacer area 724 decreases at the same time), and is etched onto the base body 710, and further, the base body 710 and the base body 710 are etched. The thickness of the portion corresponding to the protrusion 723a is greater than the thickness of the portion corresponding to the spacing area 724, that is, spacing protrusions and grooves are formed on the base 710, and then the patterned dielectric layer 730 is formed. After the etching is completed, part of the convex part 723a is etched, and part of the convex part 723c remains. The thickness of the remaining convex part 723c is smaller than that of the convex part 723a. Among them, dry etching or wet etching is used for etching.

Referring to FIG. 17b, FIG. 17b is a schematic structural diagram of the patterned mask layer formed in FIGS. 12a to 12b, 14a to 14b, and 16a to 16b after being etched.

In another embodiment, step S13 specifically includes: etching the base 710a using the patterned mask layer 725a as a mask. Specifically, etching the entire patterned mask layer 725a forming the mask portion 723b. Because the patterned mask layer 725 includes a mask portion 723b (mask portion 723) and a spacer region 724b, and the density of magnetic particles in the mask portion 723b is greater than the density of magnetic particles in the spacer region 724b. Therefore, the hardness of the mask portion 723b is greater than the hardness of the spacer area 724b. Under the premise of the same etching time, the hard mask portion 723b is partially etched, and the softer spacer region 724b is etched entirely, and is etched onto the base 710. Furthermore, the thickness of the portion of the base 710 corresponding to the mask portion 723b is greater than The thickness of the portion corresponding to the spacer region 724b is to form spaced protrusions and recesses on the base 710, thereby forming the patterned dielectric layer 730. After the etching is completed, the mask portion 723b is partially etched, leaving a portion of the mask portion 723d, and the remaining mask portion 723d has a thickness smaller than the mask portion 723b.

Referring also to FIG. 18 , FIG. 18 is a schematic structural diagram of the patterned dielectric layer in FIGS. 17 a and 17 b after the remaining mask portion is removed.

Step S14: Remove the remaining patterned mask layer on the patterned dielectric layer to form the dielectric layer 730. Specifically, oxygen plasma bombardment may be used to process the remaining convex portion 723c or the remaining mask portion 723d. The dielectric layer 730 may be used as the dielectric layer 12 of the electronic device shown in FIG. 1 . The dielectric layer 730 is a micro-nano layer structure.

In the manufacturing method of the micro-nano layer structure provided by the embodiment of the present application, during the entire manufacturing process, the mask member does not come into contact with the original glue layer. Instead, magnetic force is used to adsorb or repel the magnetic particles in the original glue layer to perform patterning processing. The mask piece does not come into contact with the original glue layer, so the processing cleanliness is higher and the yield is improved. Non-contact processing can also be applied to smaller size pattern processing, such as patterns below 20 nanometers. In addition, compared with existing manufacturing methods, the manufacturing method of the embodiment of the present application does not require steps such as pre-baking, exposure, development, and post-baking. The process is relatively simple, simplifying the manufacturing steps and improving processing efficiency.

The above are only some examples and implementation modes of the present application. The protection scope of the present application is not limited thereto. Any person familiar with the art can easily think of changes or replacements within the technical scope disclosed in the present application, and all of them should be covered. within the protection scope of this application. Therefore, the protection scope of this application should be subject to the protection scope of the claims.

Claims

A method for making a micro-nano layer structure, including:

A mask piece is provided, the mask piece has magnetic permeability or magnetism, the mask piece includes alternately distributed first regions and second regions, the magnetic field strength of the first region is greater than the magnetic field strength of the second region ;

Provide a substrate, the substrate includes a base body and an original glue layer provided on the base body, the original glue layer includes colloid and magnetic particles doped in the colloid;

The mask member is opposite to the substrate, and there is a preset distance between the mask member and the substrate, and the magnetic force in the first area drives the magnetic particles corresponding to the first area to move, So that the original glue layer forms a patterned mask layer; the patterned mask layer includes staggered mask portions and spacing areas, and the density of magnetic particles in the mask portion is greater than the magnetic particles in the spacing areas. density; and one of the mask portion and the spacing area corresponds to the first area, and the other corresponds to the second area;

Using the patterned mask layer as a mask, etch the base body so that the base body forms a patterned dielectric layer;

The remaining patterned mask layer on the patterned dielectric layer is removed to form a dielectric layer.
The method for manufacturing a micro-nano layer structure according to claim 1, wherein the magnetic particles are diamagnetic particles;

The step of driving the magnetic particles corresponding to the first area to move by the magnetic force in the first area includes: the first area generates a repulsive force on the diamagnetic particles, and the repulsive force drives the diamagnetic particles toward The area corresponding to the second area is moved to form the mask portion corresponding to the second area, and to form the spacer area corresponding to the first area.
The method for manufacturing a micro-nano layer structure according to claim 1, wherein the magnetic particles are paramagnetic particles;

The step of driving the magnetic particles corresponding to the first area to move by the magnetic force in the first area includes: the first area generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles toward The area corresponding to the first area is moved to form the mask portion corresponding to the first area, and to form the spacer area corresponding to the second area.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 3, wherein the mask portion is a convex portion protruding away from the base, and the spacing area is a convex portion protruding toward the base. The recessed portion of the base body is concave.
The method of manufacturing a micro-nano layer structure according to claim 4, wherein the thickness of the convex portion is greater than the thickness of the recessed portion.
The method of manufacturing a micro-nano layer structure according to claim 4, wherein the magnetic induction intensity of the mask is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascal. seconds to 10,000 pascal seconds.
The method of manufacturing a micro-nano layer structure according to claim 4, wherein the step of driving magnetic particles corresponding to the first region to move by the magnetic force in the first region includes:

The magnetic force in the first area drives the magnetic particles corresponding to the first area to drive the colloid to move to form the convex portion.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 3, wherein the mask part is a magnetic particle gathering part, and the spacing area is a magnetic particle sparse part; the magnetic particles The density of magnetic particles in the aggregation part is greater than the density of magnetic particles in the part where magnetic particles are sparse.
The method for manufacturing a micro-nano layer structure according to claim 8, wherein the magnetic induction intensity of the mask is between 0.01 Tesla and 5 Tesla, and the viscosity of the colloid is between 0.001 Pascal. seconds to 100 Pascal seconds.
The method of manufacturing a micro-nano layer structure according to claim 8, wherein the step of driving magnetic particles corresponding to the first region to move by the magnetic force in the first region includes:

The magnetic force of the first area drives the magnetic particles corresponding to the first area to move to form the magnetic particle aggregation part.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, wherein while the first region generates a first magnetic force on the magnetic particles, the second region exerts a first magnetic force on the magnetic particles. The magnetic particles generate a second magnetic force, and the first magnetic force is between 5 times and 200 times of the second magnetic force.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 11, wherein the number of mask members is two; the magnetic particles are diamagnetic particles;

The step of placing the mask member opposite to the substrate, and the magnetic force in the first area driving the magnetic particles corresponding to the first area to move includes: placing the substrate between the two mask members. time, so that the original glue layer faces one of the mask parts, and the base body faces the other of the mask parts; the first repulsive force of the first area of one of the mask parts, and a second repulsive force of another first region of the mask member to drive the diamagnetic particles corresponding to the first region to move.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 12, wherein the thickness of the first region is greater than the thickness of the second region, so that the magnetic field of the first region The intensity is greater than the magnetic field intensity of the second region.
The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 12, wherein the mask element includes a stacked and distributed mask plate and an electromagnetic element, and the mask plate is made of soft magnetic material. into; the first region and the second region are formed on the mask plate, and the thicknesses of the first region and the second region are equal;

The electromagnetic component includes a plurality of electromagnets, the plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets is the same as the shape of the first area; so that the mask After the plate is magnetized by the electromagnetic component, the magnetic field intensity in the first area is greater than the magnetic field intensity in the second area.
An electronic device, characterized in that it includes: a base layer, a dielectric layer and a functional layer. The dielectric layer and the functional layer are sequentially laminated on the surface of the base layer. The dielectric layer adopts any one of claims 1 to 14. made by the manufacturing method described in the item.
A processing device with a micro-nano layer structure, used in the manufacturing method according to any one of claims 1 to 14, characterized in that the processing device includes: a mask; the mask has magnetic permeability Or magnetically, the mask includes first regions and second regions distributed in a staggered manner, and the magnetic field strength of the first region is greater than the magnetic field strength of the second region.
The processing device of micro-nano layer structure according to claim 16, characterized in that the thickness of the first region is greater than the thickness of the second region, so that the magnetic field intensity of the first region is greater than that of the second region. The magnetic field strength of the area.
The processing device of micro-nano layer structure according to claim 16, characterized in that the mask member has a first surface and a second surface arranged oppositely, and the mask member includes a plurality of shielding areas and a plurality of A hollow area, the hollow area runs through the first surface and the second surface, a plurality of the shielding areas are staggered with a plurality of the hollow areas, and the pattern formed by the plurality of shielding areas is consistent with the mask. parts are the same, or the patterns formed by the plurality of hollow areas are the same as the mask part.
The processing device of micro-nano layer structure according to claim 17, characterized in that the mask member includes a plurality of protrusions and a plurality of recesses, and the area between any two adjacent recesses forms the Protrusions; a plurality of the protrusions form a pattern that is the same as the mask portion, or a plurality of the recessed portions form a pattern that is the same as the mask portion.
The processing device of micro-nano layer structure according to claim 17, characterized in that the mask member includes a stacked first plate and a second plate, and the second plate has a first surface and a third plate arranged oppositely. Two surfaces, the second plate includes a plurality of shielding areas and a plurality of hollow areas, the hollow areas penetrate the first surface and the second surface, and any two adjacent ones The area between the hollow areas forms the blocking area;

The first plate and the second plate are fixedly connected, a plurality of the shielding areas and the first plate form a plurality of protrusions, a plurality of the hollow areas and the first plate form a plurality of recesses; The pattern formed by each of the protrusions is the same as the mask portion, or the pattern formed by the plurality of recessed portions is the same as the mask portion.
The micro-nano layer structure processing device according to any one of claims 17 to 20, wherein the mask member is made of a permanent magnet.
The processing device of micro-nano layer structure according to any one of claims 17 to 20, wherein the mask plate includes a stacked and distributed mask plate and an electromagnetic component, and the mask plate is made of soft magnetic material. The mask plate includes a first preparation area and a second preparation area. When the electromagnetic component is energized to generate magnetism, the first preparation area and the second preparation area have magnetism. The first preparation area is the The first area is the first area, and the second preparation area is the second area.
The processing device of micro-nano layer structure according to claim 22, characterized in that the electromagnetic component includes a plurality of electromagnets, a plurality of the electromagnets correspond to the first region, and a plurality of the electromagnets The pattern formed is the same as the shape of the first area.
The processing device of micro-nano layer structure according to claim 22, wherein the electromagnetic component includes a first group of electromagnets and a second group of electromagnets, and the first group of electromagnets corresponds to the first region. , and the pattern formed by the first group of electromagnets is the same as the shape of the first region; the second group of electromagnets corresponds to the second region, and the pattern formed by the second group of electromagnets is consistent with the shape of the first region. The shape of the second area is the same.
The processing device of micro-nano layer structure according to claim 16, characterized in that the mask plate includes a stacked and distributed mask plate and an electromagnetic component, and the mask plate is made of soft magnet; the mask plate The plate includes a first preparation area and a second preparation area, and the thickness of the first preparation area and the second preparation area is the same; when the electromagnetic component is energized to generate magnetism, the first preparation area and the second preparation area With magnetism, the first preparation area is the first area, and the second preparation area is the second area;

The electromagnetic component includes a plurality of electromagnets corresponding to the first region, and a pattern formed by the plurality of electromagnets is the same as the shape of the first region.