CN114772545A

CN114772545A - Manufacturing method and processing device of micro-nano layer structure and electronic device

Info

Publication number: CN114772545A
Application number: CN202210248455.XA
Authority: CN
Inventors: 李志海; 张适; 王浩宇; 蒋珺楠
Original assignee: Huawei Technologies Co Ltd
Current assignee: Huawei Technologies Co Ltd
Priority date: 2022-03-14
Filing date: 2022-03-14
Publication date: 2022-07-22
Also published as: WO2023174181A1

Abstract

The embodiment of the application provides a manufacturing method of a micro-nano layer structure, a processing device and an electronic device, wherein the manufacturing method comprises the steps of providing a mask piece, wherein the mask piece comprises a first area and a second area, and the magnetic field intensity of the first area is larger than that of the second area; providing a substrate, wherein the substrate comprises a matrix and a crude rubber layer, and the crude rubber layer comprises rubber and magnetic particles; the mask piece is opposite to the substrate, a preset distance is reserved between the mask piece and the substrate, and magnetic particles are driven to move by the magnetic force of the first area so that the original glue layer forms a patterned mask layer; the patterned mask layer comprises a mask part and a spacer region, and the substrate is etched by taking the patterned mask layer as a mask so as to form a patterned dielectric layer on the substrate; and removing the residual patterned mask layer on the patterned dielectric layer to form the dielectric layer. Magnetic particles are driven by magnetic force, the mask piece is not in contact with the original adhesive layer, the processing cleanliness is high, the finished product rate is improved, the manufacturing process is simple, and the processing efficiency is improved.

Description

Manufacturing method and processing device of micro-nano layer structure and electronic device

Technical Field

The present disclosure relates to the field of patterned electronic device processing technologies, and in particular, to a method and apparatus for fabricating a micro-nano layer structure, and an electronic device.

Background

The nano-imprinting technology is a novel micro-nano processing technology, breaks through the difficult problem of the traditional photoetching in the process of reducing the characteristic dimension, and has the characteristics of high resolution and low cost. Therefore, the method is expected to replace the traditional photoetching technology in the future and becomes an important processing means in the fields of electricity, optics, photoelectricity and the like.

At present, nanoimprint lithography utilizes an imprinting template to imprint on a substrate provided with a glue layer, the imprinting template is generally provided with patterns, the patterns can be printed on the glue layer after the imprinting template is directly contacted with and extrudes the glue layer, then the glue layer with the patterns is solidified, and finally, the required patterns are formed on the substrate through steps of etching, stripping and the like.

However, the aforementioned nanoimprint technology has complicated steps and low processing efficiency, and the imprint template may contaminate the adhesive layer, resulting in a decrease in yield.

Disclosure of Invention

The embodiment of the application discloses a manufacturing method of a micro-nano layer structure, a processing device and an electronic device. And the processing steps are simple, and the efficiency is higher.

The first aspect of the embodiment of the application discloses a method for manufacturing a micro-nano layer structure, which comprises the following steps,

step S10: providing a mask part, wherein the mask part has magnetic permeability or magnetism, the mask part comprises a first area and a second area which are distributed in a staggered mode, and the magnetic field intensity of the first area is larger than that of the second area.

Step S11: providing a substrate, wherein the substrate comprises a matrix and a raw rubber layer arranged on the matrix, and the raw rubber layer comprises colloid and magnetic particles doped in the colloid. The magnetic particles may be diamagnetic particles or paramagnetic particles.

Step S12: the mask piece is opposite to the substrate, a preset distance is reserved between the mask piece and the substrate, and the magnetic force of the first area drives the magnetic particles corresponding to the first area to move so that the original glue layer forms a patterned mask layer; the patterned mask layer comprises mask portions and spacers which are distributed in a staggered mode, and the concentration of magnetic particles of the mask portions is larger than that of the spacers; one of the mask portion and the spacer region corresponds to the first region, and the other corresponds to the second region. The magnetic force of the first region can be repulsive force or attractive force, wherein when the magnetic particles are diamagnetic particles, the magnetic force is repulsive force; when the magnetic particles are paramagnetic particles, the magnetic force is an adsorption force.

Step S13: and etching the substrate by taking the patterned mask layer as a mask so as to form a patterned dielectric layer on the substrate. Specifically, the mask portion is partially etched, the spacers are all etched, and the regions of the substrate corresponding to the spacers are etched, so that the substrate forms the patterned dielectric layer.

Step S14: and removing the residual patterned mask layer on the patterned dielectric layer to form the dielectric layer. Specifically, the spacer region is completely etched, and the mask portion is partially etched, so that the remaining patterned mask layer on the patterned dielectric layer is removed, and actually, the remaining mask portion on the patterned dielectric layer is removed.

According to the manufacturing method of the micro-nano layer structure, in the whole manufacturing process, the mask piece is not in contact with the original glue layer, but the magnetic force is applied to the magnetic particles in the original glue layer, so that patterning processing is performed, the mask piece is not in contact with the original glue layer, the processing cleanliness is high, and the yield is improved. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the application does not need the steps of pre-baking, exposure, development, post-baking and the like, is simple in process, simplifies the manufacturing steps and improves the processing efficiency.

In one embodiment, the magnetic particles are diamagnetic particles; the step of the magnetic force of the first region driving the magnetic particles corresponding to the first region to move comprises: the first region generates repulsive force to the inverse magnetic particles, and the repulsive force drives the inverse magnetic particles to move toward a region corresponding to the second region to form a mask portion corresponding to the second region and form a spacer corresponding to the first region.

It is understood that while the first region generates a repulsive force to the corresponding diamagnetic particles, the second region, although having a weaker magnetic field strength, may also generate a repulsive force to the corresponding diamagnetic particles, where the repulsive force generated by the first region is referred to as a first repulsive force, the repulsive force generated by the second region is referred to as a second repulsive force, and the first repulsive force is greater than the second repulsive force, so as to ensure that the first repulsive force can drive the diamagnetic particles to move.

The diamagnetic particles are made of one or more of gold, silver, copper, lead and the like. The diamagnetic particles have the property of escaping from a region with a strong magnetic field to a region with a weak magnetic field, and the magnetic field intensity of the first region is greater than that of the second region, so that the diamagnetic particles move to the region corresponding to the second region, and a mask part and a spacer are formed on the original glue layer. When the repulsive force of the first region repels the diamagnetic particles, the first region does not contact the diamagnetic particles and the colloid, and then convex parts are formed on the original adhesive layer, so that the pollution rate is reduced, and the yield is improved.

In one embodiment, the magnetic particles are paramagnetic particles; the step of the magnetic force of the first region driving the magnetic particles corresponding to the first region to move comprises: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles to move towards the region corresponding to the first region so as to form a mask part corresponding to the first region and form a spacer region corresponding to the second region.

It can be understood that while the first region generates an attractive force to the corresponding paramagnetic particle, the second region may also generate an attractive force to the corresponding paramagnetic particle. The adsorption force generated by the first region is called a first adsorption force, the adsorption force generated by the second region is called a second adsorption force, and the first adsorption force is greater than the second adsorption force, so that the first adsorption force can drive the paramagnetic particles to move.

The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt and nickel, and tend to move to a region with a stronger magnetic field when being positioned in the magnetic field. The paramagnetic particles have a property of moving to a region where a magnetic field is strong, and the magnetic field strength of the first region is larger than that of the second region, and therefore, the paramagnetic particles move to a region corresponding to the first region, thereby forming a mask portion and a spacer. When the adsorption force of the first area adsorbs the paramagnetic particles, the first area is not in contact with the paramagnetic particles and the colloid, so that a mask part can be formed on the original glue layer, the pollution rate is reduced, and the yield is improved.

In one embodiment, the mask portions are protrusions protruding away from the substrate and the spacers are recesses recessed toward the substrate. The cross section of the convex part is in a shape of gradually reducing height from the middle part to two sides, and is similar to a convex arc. The thickness of the convex part is larger than that of the concave part. Therefore, during etching, the part of the substrate corresponding to the convex part is shielded by the convex part, the concave part is completely etched, and the substrate corresponding to the concave part is etched, so that a patterned dielectric layer can be formed. Since the convex portion and the concave portion are formed without contacting the mask member, the etching accuracy and the yield are high when the convex portion is used as the mask portion to etch the substrate.

In one embodiment, the magnetic induction of the mask member is between 0.1 tesla and 50 tesla, and the viscosity of the gel is between 1 pascal second and 10000 pascal seconds. The magnetic induction intensity of the mask piece is within the range, so that the mask piece can generate enough repulsive force to the magnetic particles, the convex part can be formed smoothly, and the thickness of the convex part can be kept within the range of forming a proper micro-nano structure after etching. The situation that the magnetic induction intensity of the mask piece is not appropriate, so that the thickness of a convex part is not enough, and the situation that the substrate cannot be etched subsequently and the micro-nano structure cannot be processed is avoided; or, the thickness of the convex part is too thick, and the micro-nano structure etched subsequently may be too deep. The viscosity of the gel of the base gel layer is within the above range, so that the convex portion can be smoothly formed, and the thickness is maintained within a range in which the pattern can be etched. The convex part is prevented from being failed to be formed, or even if the convex part is formed, the thickness of the convex part is not appropriate.

In one embodiment, the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes: the magnetic force of the first region drives the magnetic particles corresponding to the first region to drive the colloid to move so as to form the convex part. The magnetic particles drive the colloid to move, specifically, the diamagnetic particles drive the colloid to move to the region corresponding to the second region, or the paramagnetic particles drive the colloid to move to the region corresponding to the first region. The colloid can form convex parts and concave parts after moving, thereby facilitating the subsequent etching.

In one embodiment, the mask portion is a magnetic particle aggregation portion, and the spacer region is a magnetic particle rarefaction portion; the concentration of magnetic particles at the magnetic particle concentration portion is greater than that of the magnetic particle sparse portion. The density of the magnetic particles at the mask part is higher, the interval area has no magnetic particles or the density of the magnetic particles is lower, so that the hardness of the mask part is higher than that of the rest parts, and the thickness of the mask part is reduced less in the same time during etching. The spacer region is completely etched, and after a part of the substrate corresponding to the spacer region is etched, the mask part is remained, so that a patterned dielectric layer can be formed. When the magnetic particle aggregation portion and the magnetic particle sparse portion are formed, the magnetic particle aggregation portion is not in contact with the mask member, so that the accuracy is high, and the magnetic particle aggregation portion serves as the mask portion, so that the etching accuracy and the yield are high.

In one embodiment, the magnetic induction of the mask member is between 0.01 tesla and 5 tesla, and the viscosity of the colloid is between 0.001 pascal-second and 100 pascal-second. The magnetic induction intensity of the mask piece is within the range, so that the mask piece can generate enough adsorption force on the magnetic particles, the mask portion can be formed smoothly, and the density of the reverse magnetic particles of the mask portion can be kept within the range of forming a proper micro-nano structure after etching. The situation that the density of inverse magnetic particles at the mask part is not enough and the substrate cannot be etched subsequently to cause failure in processing into a micro-nano structure due to improper magnetic induction intensity of the mask piece is avoided; or, the inverse magnetic particles at the mask portion may be too dense, and the micro-nano structure to be subsequently etched may be too deep. The viscosity of the colloid of the original glue layer is in the range, so that the mask part can be smoothly formed, and the density of the diamagnetic particles is kept in the range capable of etching the pattern. The mask part is prevented from failing to be formed, or even if the mask part is formed, the density of the magnetic particles in the mask part is not proper.

In one embodiment, the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region includes driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region to form the magnetic particle aggregation part. The magnetic particle movement may be specifically a movement of a diamagnetic particle to a region corresponding to the second region, or a movement of a paramagnetic particle to a region corresponding to the first region. The magnetic particles can form a magnetic particle aggregation part and a magnetic particle sparse part after moving, so that subsequent etching is facilitated.

In one embodiment, the first region generates a first magnetic force on the magnetic particles while the second region generates a second magnetic force on the magnetic particles, the first magnetic force being between 5 times and 200 times the second magnetic force. Thereby, it can be ensured that the first magnetic force is larger than the second magnetic force, such that the first magnetic force can drive the magnetic particles to move.

In one embodiment, the number of the mask pieces is two; the magnetic particles are diamagnetic particles; the step of making the mask member and the substrate opposite to each other, and the magnetic force of the first region driving the magnetic particles corresponding to the first region to move, includes: placing the substrate between the two mask pieces so that the original rubber layer is opposite to one of the mask pieces and the base body is opposite to the other mask piece; the first repulsive force of the first region of one of the mask members and the second repulsive force of the first region of the other of the mask members drive the inverse magnetic particles corresponding to the first region to move.

It is understood that two mask members are disposed on both upper and lower sides of the substrate, and the respective first regions of the two mask members are opposed to each other and the respective second regions of the two mask members are opposed to each other, that is, the respective first regions of the two mask members are aligned in the height direction and the respective second regions of the two mask members are aligned in the height direction. The first repulsive force and the second repulsive force act on the inverse magnetic particles, and escape of the inverse magnetic particles to the region corresponding to the second region can be accelerated, so that formation of the mask portion is accelerated, and production efficiency is improved.

In one embodiment, the thickness of the first region is greater than the thickness of the second region such that the magnetic field strength of the first region is greater than the magnetic field strength of the second region. The thickness difference of the first area and the second area is utilized, so that the magnetic field intensity of the first area and the second area is different, the difference of the magnetic field intensity is utilized to adsorb or repel the magnetic particles, and a mask part is formed.

In one embodiment, the mask piece comprises mask plates and electromagnetic pieces which are distributed in a stacked mode, wherein the mask plates are made of soft magnets; the first area and the second area are formed on the mask plate, and the thicknesses of the first area and the second area are equal; the electromagnetic part comprises a plurality of electromagnets, the electromagnets correspond to the first area, and the pattern formed by the electromagnets is the same as the shape of the first area; so that the magnetic field intensity of the first area is larger than that of the second area after the mask plate is magnetized by the electromagnetic piece. Therefore, the mask plate is simple in structure, easy to process and high in structural strength, and smooth forming of the mask portion can be ensured.

A second aspect of the present application provides an electronic device comprising: the functional layer is laminated on the surface of the base layer in sequence, and the dielectric layer is manufactured by adopting any one manufacturing method in the first aspect of the application. The dielectric layer is manufactured by the manufacturing method, and has high yield and low cost.

A third aspect of the present application provides a processing apparatus for a micro-nano layer structure, which is used in the manufacturing method of any one of the first aspect of the present application, wherein the processing apparatus includes: a mask member; the mask part has magnetic permeability or magnetism, and the mask part includes first region and second region of crisscross distribution, and the magnetic field intensity of first region is greater than the magnetic field intensity of second region.

In one embodiment, the mask piece has a first surface and a second surface which are arranged opposite to each other, the mask piece comprises a plurality of shielding areas and a plurality of hollowed-out areas, the hollowed-out areas penetrate through the first surface and the second surface, the shielding areas and the hollowed-out areas are arranged in a staggered mode, and patterns formed by the shielding areas are the same as those of the mask portion or the hollowed-out areas are the same as those of the mask portion. Therefore, the mask member is light in weight and small in volume.

In one embodiment, the mask member comprises a plurality of protrusions and a plurality of recesses, and the region between any two adjacent recesses forms a protrusion; the pattern formed by the plurality of projections is the same as the mask portion, or the pattern formed by the plurality of recesses is the same as the mask portion. Therefore, the mask piece is strong in structural strength and not prone to deformation, and the service life of the mask piece can be prolonged.

In one embodiment, the mask piece comprises a first plate and a second plate which are stacked, the second plate is provided with a first surface and a second surface which are arranged in a back-to-back mode, the second plate comprises a plurality of shielding areas and a plurality of hollow-out areas, the hollow-out areas penetrate through the first surface and the second surface, and an area between any two adjacent hollow-out areas forms a shielding area; the first plate and the second plate are fixedly connected, the plurality of shielding areas and the first plate form a plurality of bulges, and the plurality of hollow-out areas and the first plate form a plurality of concave parts; the pattern formed by the plurality of projections is the same as the mask portion, or the pattern formed by the plurality of recesses is the same as the mask portion. Therefore, the processing is convenient, and the cost is reduced. The first plate is used for enhancing the structural strength of the whole mask piece, so that the mask piece is not easy to deform, and the service life of the mask piece is prolonged.

In one embodiment, the mask member is made of a permanent magnet. The permanent magnet has magnetism, and can generate a magnetic field without external force interference; the permanent magnet can be samarium cobalt magnet, neodymium iron boron magnet, ferrite magnet, alnico magnet or iron chromium cobalt magnet, etc.; the permanent magnet has stable magnetism, does not need the assistance of external force and is more convenient to use.

In one embodiment, the mask plate comprises a mask plate and electromagnetic pieces which are distributed in a stacked mode, and the mask plate is made of soft magnets; the mask plate comprises a first preparation area and a second preparation area, the first preparation area and the second preparation area have magnetism when the electromagnetic part is electrified to generate magnetism, the first preparation area is a first area, and the second preparation area is a second area. The soft magnet can be made of one or more of pure iron, low-carbon steel, silicon steel sheets, permalloy, ferrite and the like; the magnetism of the soft magnet is flexible, and the soft magnet can be matched with an electromagnetic part, so that the magnetic strength and the existence of the soft magnet can be controlled according to actual needs, and the applicability is strong.

In one embodiment, the electromagnetic part comprises a plurality of electromagnets, the plurality of electromagnets correspond to the first area, and the pattern formed by the plurality of electromagnets is the same as the shape of the first area. The thickness of the first area is larger than that of the second area, and the electromagnetic piece is combined with the first area to correspond to the first area, so that the magnetic field intensity of the first area is obviously larger than that of the second area, the first repulsive force is far larger than the second repulsive force, or the first adsorption force is far larger than the second adsorption force, the forming speed of the mask part is increased, and the production efficiency is improved.

In one embodiment, the electromagnetic part comprises a first group of electromagnets and a second group of electromagnets, the first group of electromagnets correspond to the first area, and the pattern formed by the first group of electromagnets is the same as the shape of the first area; the second group of electromagnets correspond to the second area, and the pattern formed by the second group of electromagnets is the same as the shape of the second area. That is, the plurality of electromagnets are uniformly stacked above the mask plate, and thus, the mask member has a relatively simple structure and is easy to manufacture.

In one embodiment, the mask plate comprises a mask plate and electromagnetic pieces which are distributed in a stacked mode, and the mask plate is made of soft magnets; the mask plate comprises a first preparation area and a second preparation area, and the thicknesses of the first preparation area and the second preparation area are the same; when the electromagnetic part is electrified to generate magnetism, the first preparation area and the second preparation area have magnetism, the first preparation area is a first area, and the second preparation area is a second area; the electromagnetic part comprises a plurality of electromagnets, the electromagnets correspond to the first area, and the pattern formed by the electromagnets is the same as the shape of the first area. That is, in this embodiment, the thickness of the mask plate is uniform, and the electromagnetic member corresponds to the first region, so that the magnetic field strength of the first region is greater than that of the second region. Therefore, the mask plate is simple in structure, easy to process and high in structural strength, and smooth forming of the mask portion can be ensured.

According to the manufacturing method of the micro-nano layer structure, in the whole manufacturing process, the mask piece is not in contact with the original glue layer, but magnetic particles in the original glue layer are adsorbed or repelled by utilizing magnetic force, so that patterning treatment is carried out, the mask piece is not in contact with the original glue layer, the processing cleanliness is high, and the yield is improved. The contactless processing can also be applied to pattern processing of smaller sizes, such as patterns below 20 nm. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the application does not need the steps of pre-baking, exposure, development, post-baking and the like, is simple in process, simplifies the manufacturing steps and improves the processing efficiency.

Drawings

The drawings used in the embodiments of the present application are described below.

Fig. 1 is a schematic sectional view of a part of the structure of an electronic device.

Fig. 2 is a flowchart of a method for fabricating the micro-nano layer structure shown in fig. 1.

Fig. 3 is a plan view of an embodiment of a mask member of the method for manufacturing the micro-nano layer structure shown in fig. 1.

Fig. 3a to 3f are schematic side structure diagrams of the mask member provided by the method for manufacturing the micro-nano layer structure shown in fig. 3.

Fig. 4 is a schematic structural diagram of a substrate provided by the method for manufacturing the micro-nano layer structure shown in fig. 2.

Fig. 5a to 5f are schematic structural diagrams of the mask piece and the substrate in the manufacturing method of the micro-nano layer structure shown in fig. 2.

Fig. 6a to 6f are schematic views of the mask member and the substrate corresponding to fig. 5a to 5f, and the substrate is formed into a mask portion using the mask member.

Fig. 7a and 7b are schematic structural diagrams of another mask member and a substrate which are opposite to each other in the manufacturing method of the micro-nano layer structure shown in fig. 2.

Fig. 8a and 8b are schematic diagrams of forming a mask portion on a substrate by using a magnetic field corresponding to the mask member in fig. 7a and 7 b.

Fig. 9a to 9f are schematic structural diagrams of a mask member and a substrate which are opposite to each other in the method for manufacturing the micro-nano layer structure shown in fig. 2.

Fig. 10a to 10f are schematic diagrams of forming a mask portion on a substrate by using a magnetic field corresponding to the mask member shown in fig. 9a to 9 f.

Fig. 11a and 11b are schematic structural diagrams of a mask member and a substrate in the method for manufacturing the micro-nano layer structure shown in fig. 2.

Fig. 12a and 12b are schematic diagrams of forming a mask portion on a substrate using a magnetic field corresponding to the mask member of fig. 11a and 11 b.

Fig. 13a and 13b are schematic structural diagrams of another mask member opposite to a substrate in the method for manufacturing the micro-nano layer structure shown in fig. 2.

Fig. 14a and 14b are schematic views of forming a mask portion on a substrate using a magnetic field corresponding to the mask member of fig. 13a and 13 b.

Fig. 15a and 15b are schematic structural diagrams of a mask member and a substrate which are opposite to each other in the method for manufacturing the micro-nano layer structure shown in fig. 2.

Fig. 16a and 16b are schematic views of a substrate forming a mask portion using a magnetic field corresponding to the mask member of fig. 15a and 15 b.

Fig. 17a is a schematic structural diagram of the patterned mask layer formed in fig. 6a to 6f, 8a to 8b, and 10a to 10f after being etched.

Fig. 17b is a schematic structural diagram of the patterned mask layer formed in fig. 12a to 12b, 14a to 14b, and 16a to 16b after being etched.

Fig. 18 is a schematic diagram of the structure of fig. 17a and 17b in which the remaining mask portion on the patterned dielectric layer is removed.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any creative effort based on the embodiments in the present invention, belong to the protection scope of the present invention.

Embodiments of the present disclosure provide an electronic device including a patterned dielectric layer, which may be used in the fabrication of electronic devices in the fields of electronics, optics, optoelectronics, and the like, for example, to fabricate semiconductor electronic devices, gratings, and the like. Examples of the semiconductor electronic device include a light-emitting diode (LED) chip, an organic light-emitting diode (OLED), a thin film transistor, a field effect transistor, and the like. The electronic device is suitable for electronic equipment such as mobile phones, display screens and computers. Such as a display screen for a mobile phone. The conductive circuit layer and the insulating function layer have patterns with nanoscale dimensions and can be called as a micro-nano layer structure.

Referring to fig. 1 and fig. 2, fig. 1 is a schematic cross-sectional view of a partial structure of an electronic device, and fig. 2 is a flowchart of a manufacturing method of the micro-nano layer structure shown in fig. 1.

The electronic device 10 of the embodiment includes a base layer 11, a dielectric layer 12 and a functional layer 13, wherein the dielectric layer 12 and the functional layer 13 are sequentially stacked on a surface of the base layer. The base layer 11 may be a glass layer. The dielectric layer 12 may be silicon dioxide.

This embodiment will be described by taking the fabrication of a light emitting diode chip as an example. The functional layer 13 has a multilayer structure, for example, a layer structure including an N or P type semiconductor layer, a metal layer, an insulating layer, a light emitting layer, a step layer, and the like. In fig. 1 of the present embodiment, only the dielectric layer 12 is shown, and the functional layer 13 is illustrated schematically.

In other embodiments, the electronic device is a Thin Film Transistor (TFT), and may be applied to an array substrate of a Liquid Crystal Display (LCD) or an Organic Light Emitting Diode (OLED) display, and the functional layer is a multi-layer structure, for example, including a gate electrode, a source/drain electrode, a channel layer, and the like.

The micro-nano layer structure in the embodiment is mainly an insulating dielectric layer 12, and the embodiment provides a manufacturing method of the micro-nano layer structure, which comprises the following steps.

Step S10: providing a mask part, wherein the mask part has magnetic permeability or magnetism, the mask part comprises a first area and a second area which are distributed in a staggered mode, and the magnetic field intensity of the first area is larger than that of the second area. Specifically, the mask piece comprises a plurality of first areas and a plurality of second areas, and a second area is arranged between every two adjacent first areas at intervals; that is, the first regions and the second regions are alternately distributed. The magnetic field strength of the first region is greater than the magnetic field strength of the second region, which may be at least 0. The first region and the second region are used to form a patterned mask layer on a base layer of an electronic device.

Referring to fig. 3 and fig. 3a to 3f, fig. 3 is a top view of an embodiment of a mask piece of the method for manufacturing the micro-nano layer structure shown in fig. 1, wherein the mask piece is only illustrated in one case and does not represent the only form of the mask piece. Fig. 3a to 3f are schematic side structure diagrams of the mask member provided by the method for manufacturing the micro-nano layer structure shown in fig. 3.

Referring to fig. 3a, in the first embodiment of the present application, the mask member 100 is a thin plate and is a permanent magnet, and the permanent magnet itself has magnetism and can generate a magnetic field without external interference; the permanent magnet can be samarium cobalt magnet, neodymium iron boron magnet, ferrite magnet, alnico magnet or iron chromium cobalt magnet; the permanent magnet is stable in magnetism, does not need external force assistance, and is convenient to use.

The mask member 100 is a thin plate, and includes a first surface 103 and a second surface 104, which are opposite to each other, and further includes a plurality of hollow areas 105 and a plurality of shielding areas 106. The plurality of hollow-out areas 105 penetrate through the first surface 103 and the second surface 104 and are staggered with the plurality of shielding areas 106, actually, the hollow-out areas 105 penetrate through the first surface 103 and the second surface 104, and the shielding areas 106 are formed at other positions outside the hollow-out areas 105. The occlusion region 106 is a first region 101, and the hollow region 105 is a second region 102. The second region 102 is free of magnetic or permeable material, so that the second region 102 has a magnetic field strength that is weaker than the magnetic field strength of the first region 101, even in the absence of a magnetic field, thereby achieving a magnetic field strength in the first region 101 that is greater than the magnetic field strength of the second region 102.

In one implementation of the first embodiment, the mask member 100 is non-magnetic and magnetically permeable, with the magnetism being transferred to the mask member by a magnet or electromagnet. In another embodiment, the mask member 100 is a plate body, the interior of which is doped with magnetic particles, and the magnetic particles may be permanent magnetic particles; for example, silicon gel and magnetic particles are mixed together and cured to form the plate-shaped mask member 100.

Referring to fig. 3b, in the second embodiment of the mask member of the present application, the mask member 200 includes a first surface 201 and a second surface 202, the first surface 201 is recessed toward the second surface 202 by a plurality of recesses 203, the recesses 203 do not penetrate through the second surface 202, a protrusion 204 is formed between two adjacent recesses 203, the protrusions 204 and the recesses 203 are alternately distributed, the protrusion 204 is the first region 101, and the recess 203 is the second region 102. In this embodiment, the mask member is a permanent magnet and is integrally formed. Since the thickness of the recess 203 is smaller than the thickness of the protrusion 204, the magnetic field strength at the recess 203 is weaker than at the protrusion 204, thereby achieving a magnetic field strength of the first region 101 that is greater than the magnetic field strength of the second region 102. By arranging the concave part 203, the magnetic field intensity can be distinguished, and the space between the bottom wall surface of the concave part 203 and the second surface 202 can be used as a support body for supporting the mask piece 200, so that the mask piece 200 has the advantages of strong structural strength, difficult deformation and long service life.

In one embodiment, the mask member 200 includes a first plate 210 and a second plate 220 laminated to and fixed to the first plate 210, the first plate 210 is non-magnetic, and the second plate 220 may be a permanent magnet or have magnetic permeability, as in the first embodiment. The first plate 210 is used to reinforce the strength of the second plate 220, so that the whole mask member 200 is not easy to deform and has a long service life. After the second plate 220 and the first plate 210 are laminated and fixed, the structure is the same as that of the second embodiment shown in fig. 3b, and in this case, the mask member 200 specifically includes a concave portion 203 and a convex portion 204, where the convex portion 204 is the first region 101 and the concave portion 203 is the second region 102. And will not be described in detail herein. In other embodiments, the first plate 210 may also have magnetic properties.

Of course, the mask member 200 of the present embodiment may have no magnetism, and the magnetism may be generated by external magnetic conduction. In another embodiment, an electromagnet is positioned adjacent to the mask member 200, and when energized, the electromagnet magnetizes the soft magnetic body, thereby generating a magnetic field. The soft magnet can be made of one or more of pure iron, low-carbon steel, silicon steel sheets, permalloy, ferrite and the like; the magnetism of the soft magnet is flexible, the magnetic strength and the existence of the soft magnet can be controlled according to actual needs, and the applicability is strong.

In a third embodiment of the mask component of the present application, the mask component includes a mask plate and an electromagnetic component, the mask plate and the electromagnetic component are stacked and arranged at intervals, the mask plate includes a first preparation area and a second preparation area, the first preparation area and the second preparation area have magnetism when the electromagnetic component is energized to generate magnetism, the first preparation area is a first area, and the second preparation area is a second area. In one embodiment, the first preparation area includes a plurality of shielding areas, the second preparation area includes a plurality of hollow areas, the shielding areas and the hollow areas are arranged in a staggered manner, the shielding areas are a plurality of first areas, and the hollow areas are a plurality of second areas. In another embodiment, the first preparation area includes a plurality of protrusions, the second preparation area includes a plurality of recesses, the plurality of protrusions and the plurality of recesses are arranged in a staggered manner, the plurality of protrusions are the plurality of first areas, and the plurality of recesses are the second areas.

The mask plate is a soft magnet, the soft magnet does not have magnetism, but has magnetic permeability, and when the soft magnet is in a magnetic field, the soft magnet can be magnetized to have magnetism. In particular by magnetizing a soft-magnetic body in such a way that the soft-magnetic body is subjected to an electromagnetic field. The structure of the mask plate in this embodiment may be the structure of any of the above embodiments.

The electromagnetic part comprises a plurality of electromagnets which are arranged at intervals, and the plurality of electromagnets at least correspond to the shielding areas. The electromagnetic element also comprises a body (not shown) carrying a plurality of electromagnets, which may be embodied in the form of a plate, a cylinder, or the like, able to carry the elements of the electromagnetic element.

In one embodiment, electromagnets are arranged at positions of the electromagnetic part corresponding to the shielding areas and the hollow-out areas, and can be divided into a first group of electromagnets and a second group of electromagnets; the electromagnets corresponding to the shielding areas are called a first group of electromagnets, and the electromagnets corresponding to the hollow-out areas are called a second group of electromagnets. The pattern formed by the first group of electromagnets is completely the same as the pattern formed by the plurality of shielding areas, and the pattern formed by the second group of electromagnets is completely the same as the pattern formed by the plurality of hollowed-out areas; and the magnetic properties of the electromagnets of the first group are greater than or equal to the magnetic properties of the electromagnets of the second group. One shielding area is a first area, and one hollow-out area is a second area, that is, the number of the first area and the second area is multiple.

The electromagnetic part comprises an electromagnet, the electromagnet comprises an iron core and a coil, the iron core is a soft magnet, the coil is wound on the iron core, and then the coil is electrified, so that the iron core can be magnetized, the electromagnet is made to have magnetism, and a magnetic field is generated. The soft magnet can be made of one or more of pure iron, low-carbon steel, silicon steel sheet, permalloy, ferrite and the like; the magnetism of the soft magnet is flexible, the magnetic strength and the existence of the soft magnet can be controlled according to actual needs, and the applicability is strong.

Referring to fig. 3c, in an implementation manner of the third embodiment, the mask member 300 includes a mask plate 310 and an electromagnetic member 320, and the mask plate 310 and the electromagnetic member 320 are stacked and spaced apart. The mask 310 of this embodiment is a soft magnet, which has no magnetism but can be magnetized by an electromagnetic element, and the magnetized soft magnet generates a magnetic field, thereby generating a magnetic force on magnetic particles. The mask plate 310 comprises a plurality of shielding areas 311 and a plurality of hollow-out areas 312, wherein the shielding areas 311 and the hollow-out areas 312 are arranged in a staggered manner; one shielding region 311 is a first region 101, and one hollow-out region 312 is a second region 102, that is, the number of the first region 101 and the second region 102 is also plural.

The electromagnetic member 320 includes a plurality of electromagnets 321 arranged at intervals, the plurality of electromagnets 321 are divided into a first group of electromagnets 322 and a second group of electromagnets 323, the first group of electromagnets 322 corresponds to the first region 101, and the second group of electromagnets 323 corresponds to the second region 102. Each electromagnet 321 includes a core 324 and a coil 325, the core 324 is soft magnetic, the coil 325 is wound on the core 324, and then the coil 325 is energized, so that the core 324 is magnetized, the electromagnet 321 is magnetized, and a magnetic field is generated.

The electromagnetic piece 320 is arranged above the mask 310 and is powered on, after the power is turned on, the mask 310 is in an electromagnetic field, and the thickness of the shielding area 311 is larger than that of the hollow-out area 312, so that the shielding area 311 generates stronger magnetism due to magnetic conduction, and the hollow-out area 312 does not generate magnetic conduction, so that the magnetism of the hollow-out area 312 is weaker, and the difference of the magnetic field intensity is formed between the first area 101 and the second area 102 on the mask 300.

Referring to fig. 3d, in another implementation manner of the third embodiment, the mask member 400 includes a mask plate 410 and an electromagnetic member 420, and the mask plate 410 and the electromagnetic member 420 are stacked and spaced apart. The mask 410 is a soft magnet, the mask 410 includes a plurality of protrusions 411 and a plurality of recesses 412, and the plurality of protrusions 411 and the plurality of recesses 412 are arranged in a staggered manner. The electromagnetic member 420 includes a plurality of electromagnets 421 arranged at intervals, the electromagnets 421 are disposed at positions of the electromagnetic member 420 corresponding to the plurality of protrusions 411 and the plurality of recesses 412, the plurality of electromagnets 421 corresponding to the plurality of protrusions 411 are referred to as a first group of electromagnets 422, and the plurality of electromagnets 421 corresponding to the plurality of recesses 412 are referred to as a second group of electromagnets 423. The first set of electromagnets 422 forms a pattern identical to the pattern formed by the plurality of protrusions 411, and the second set of electromagnets 423 forms a pattern identical to the pattern formed by the plurality of recesses 412; and the magnetic properties of the first set of electromagnets 422 are greater than or equal to the magnetic properties of the second set of electromagnets 423. The protrusion 411 is the first region 101, and the recess 412 is the second region 102.

The electromagnet member 420 includes a plurality of electromagnets 421, the electromagnets 421 include cores 424 and coils 425, the cores 424 are soft magnets, the coils 425 are wound on the cores 424, and then the coils 425 are energized, so that the cores 424 can be magnetized, and the electromagnets 421 have magnetism, thereby generating a magnetic field.

In another implementation manner of the third embodiment, the mask plate 410 includes a first plate 413 and a second plate 414 fixed to the first plate 413 in a stacked manner, the first plate 413 is nonmagnetic, and the second plate 414 may be a permanent magnet or has magnetic permeability, as the mask member of the first embodiment. The first plate 413 is used for enhancing the strength of the second plate 414, is not easy to deform and has a long service life. After the second plate 414 and the first plate 413 are stacked and fixed, the structure is the same as that of the above embodiment, including the concave part 412 and the convex part 411, and the first region 101 is the convex part 411, and the second region 102 is the concave part 412. And will not be described in detail herein.

An electromagnetic piece 420 is arranged above the mask 410, and when the mask 410 is in an electromagnetic field, the thickness of the protrusion 411 is larger than that of the recess 412, so that the magnetism at the recess 412 is weaker, and a difference of magnetic field intensity is formed between the first area 101 and the second area 102 on the mask 400.

Referring to fig. 3e, in another specific implementation of the third embodiment, the mask member 500 includes a mask plate 510 and an electromagnetic member 520, and the mask plate 510 and the electromagnetic member 520 are stacked and spaced apart. The mask 510 is a soft magnet, the mask 510 includes a plurality of shielding regions 511 and a plurality of hollow-out regions 512, and the plurality of shielding regions 511 and the plurality of hollow-out regions 512 are arranged in a staggered manner. The electromagnetic member 520 includes a plurality of electromagnets 521 arranged at intervals, and the plurality of electromagnets 521 correspond to the shielding regions 511, and it can be understood that the pattern formed by the plurality of electromagnets 521 is identical to the pattern formed by the plurality of shielding regions 511. The electromagnetic member 520 further includes a main body (not shown) carrying a plurality of electromagnets, and in particular, the plurality of electromagnets are fixed to the main body. The shielding region 511 forms the first region 101, and the hollow-out region 512 forms the second region 102.

The electromagnet 520 comprises a plurality of electromagnets 521, the electromagnets 521 comprise iron cores 522 and coils 523, the iron cores 522 are soft magnets, the coils 523 are wound on the iron cores 522, and then the coils 523 are electrified, so that the iron cores 522 can be magnetized, and the electromagnets 521 have magnetism, and a magnetic field is generated.

In the present embodiment, unlike the mask member shown in fig. 3c, only the position corresponding to the shielding region 511 is provided with an electromagnet. That is, only one set of electromagnets 521 of the mask member 500 is provided, and corresponds to the shielding region 511. Therefore, the magnetic field intensity of the first region 101 is greater than that of the second region 102, and after the soft magnet is magnetized, the magnetic field intensity of the first region 101 is greater than that of the second region 102; in addition, no magnetic or magnetic conductive material exists in the hollow-out area 512 (the thickness of the hollow-out area 512 is smaller than that of the shielding area 511), so that the magnetic field intensity at the hollow-out area 512 is weaker than that of the shielding area 511, the difference between the magnetic field intensities of the first area 101 and the second area 102 is increased, and the processing of the microstructure on the electronic device can be realized more efficiently.

Referring to fig. 3f, in the fourth embodiment of the mask member, the mask member 600 includes a mask plate 610 and an electromagnetic member 620, and the mask plate 610 and the electromagnetic member 620 are stacked and spaced apart from each other. The mask 610 is a soft magnet having a uniform thickness. The electromagnetic element 620 includes a plurality of electromagnets 621 arranged at intervals, and the plurality of electromagnets 621 correspond to the first areas 101, and it can also be understood that the pattern formed by the plurality of electromagnets 621 is identical to the pattern formed by the plurality of first areas 101. The electromagnets 621 are energized to make the mask 610 magnetic, that is, the positions of the mask 610 corresponding to the electromagnets 621 are the first regions 101, and the other positions are the second regions 102, and are arranged in a staggered manner. The first regions 101 and the second regions 102 are arranged alternately.

The mask 610 is a thin plate, and includes a first surface 613 and a second surface 614, which are both planar. Electromagnet 621 is spaced opposite first surface 613. The electromagnets 621 are arranged at intervals, the pattern formed by the electromagnets 621 is a first area 101, that is, after the coil is electrified, the position of the mask plate 610 in the magnetic field is magnetized, the area opposite to the electromagnets 621 is the first area 101, and the area between two electromagnets 621 is the second area 102; because the electromagnet 621 is correspondingly arranged at the first area 101, and no magnet is arranged at the position corresponding to the second area 102, the intensity of the magnetic field in which the first area 101 is positioned is greater than that of the magnetic field in which the second area 102 is positioned.

In this embodiment, the magnetism of the first region 101 and the magnetism of the second region 102 are distributed in a peak-valley manner, and although the second region 102 does not correspond to the electromagnet 621, the two electromagnets 621 have magnetism therebetween, but the magnetic field is weaker, so that the magnetic field of the second region 102 is weaker and is at a valley position, and the magnetic field of the first region 101 is stronger and is at a peak position. That is, after the electromagnet 621 is energized to magnetize the mask plate 610, the strong magnetism and the weak magnetism are alternately distributed on the mask plate 610, the region corresponding to the strong magnetism is the first region 101, and the region corresponding to the weak magnetism is the second region 102. It is understood that the area of the area opposite to the electromagnet 621 is equal to the projected area of the electromagnet 621 on the first surface 613, or the area of the area opposite to the electromagnet 621 is larger than the projected area of the electromagnet 621 on the first surface 613.

Fig. 4 is a schematic structural diagram of a substrate provided by the manufacturing method of the micro-nano layer structure shown in fig. 2.

Step S11: a substrate 700 is provided, the substrate 700 includes a base 710 and a raw glue layer 720 disposed on the base 710, the raw glue layer 720 includes a colloid 721 and magnetic particles 722 doped in the colloid 721, and the magnetic particles 722 are diamagnetic particles or paramagnetic particles. The magnetic particles 722 are doped within the colloid 721. The diamagnetic particles are made of one or more of gold, silver, copper, lead and the like. When the diamagnetic particles are in a magnetic field, they will escape to a region where the magnetic field is weak or to a region where there is no magnetic field. The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt and nickel, and tend to move to a region with stronger magnetic field when being positioned in the magnetic field. The magnetic particles 722 are uniformly disposed within the colloid 721.

The gel layer 720 is formed on a surface of the substrate 710 by spin coating. In this embodiment, the substrate 710 is any one of a silicon dioxide plate, a glass plate, a silicon plate, an indium phosphide plate, and a gallium arsenide plate. The original adhesive layer 720 is made of hot-stamping adhesive or ultraviolet-stamping adhesive, the hot-stamping adhesive comprises thermoplastic stamping adhesive or thermosetting stamping adhesive, and the thermoplastic stamping adhesive is one or a combination of more of polymethacrylate, polystyrene and polycarbonate; the thermosetting stamping glue is one or the combination of polyvinyl phenol and phthalic acid propylene ester oligomer. The ultraviolet imprint adhesive includes one or a combination of acrylic type, polystyrene type and epoxy type.

Step S12: patterning the original glue layer, wherein the mask piece is opposite to the substrate, a preset distance is reserved between the mask piece and the substrate, and the magnetic force of the first area drives the magnetic particles corresponding to the first area to move so that the original glue layer forms a patterned mask layer; the patterned mask layer comprises mask portions and spacers which are distributed in a staggered mode, and the concentration of magnetic particles of the mask portions is larger than that of the spacers; one of the mask portion and the spacer region corresponds to the first region, and the other corresponds to the second region. It should be noted that, according to the actual functional requirements of the dielectric layer, the mask portions corresponding to the plurality of first regions, that is, any two or more of the plurality of mask portions may be connected to each other at a certain edge position, so as to form a pattern of the dielectric layer, so as to adapt to the design of the metal trace. Also any two or more of the plurality of spacers may be connected to each other at an edge position.

Referring to fig. 5a, 5b, 5c, 5d, 5e and 5f, fig. 5a to 5f are schematic diagrams illustrating a mask member and a substrate in the method for fabricating the micro/nano layer structure shown in fig. 2. The mask members in fig. 5a to 5f correspond to the mask members in fig. 3a to 3f, respectively.

Referring to fig. 6a, 6b, 6c, 6d, 6e and 6f, fig. 6a to 6f are schematic diagrams of the mask piece and the substrate corresponding to fig. 5a to 5f, and the substrate is formed with a mask portion by using the mask piece. That is, a schematic diagram of several implementations of step S12 using the first to fourth embodiments.

In one embodiment, step S12 specifically includes: the photoresist layer 720 is patterned, the first region generates a repulsive force to the inverse magnetic particles 726, the repulsive force drives the inverse magnetic particles 726 to move to a region corresponding to the second region, a mask portion 723 corresponding to the second region is formed, and a spacer 724 corresponding to the first region is formed. The mask 723 is a protrusion 723a protruding away from the substrate, and the spacer 724 is a recess sinking toward the substrate. The convex portion 723a has a thickness greater than that of the concave portion.

The repulsive force generated by the first region 101 is called a first repulsive force, and the first repulsive force drives the diamagnetic particles 726 to displace, so that a convex portion 723a and a concave portion are formed on the raw rubber layer 720, and the patterned mask layer 725 is formed on the raw rubber layer 720, and the convex portion 723a is the mask portion 723. That is, the magnetic particles 722 at this time are the inverse magnetic particles 726, the magnetic force of the first region 101 is referred to as a first magnetic force, the first magnetic force is a first repulsive force, and the convex portions 723a are formed in the regions of the raw rubber layer 720 corresponding to the second regions 102.

Although the magnetic field strength of the second region 102 is small, it is also possible to generate a second magnetic force acting on the diamagnetic particles 726, where the second magnetic force is a second repulsive force, and the second repulsive force is smaller than the first repulsive force, and the second repulsive force can approach 0. So that the diamagnetic particles 726 corresponding to the first region 101 can be rapidly moved to correspond to the second region 102, thereby increasing the manufacturing efficiency. The first repulsive force is between 5 and 200 times the second repulsive force. In the present embodiment, the first repulsive force is 100 times as large as the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. the second repulsive force.

The first region 101 and the second region 102 are adjacent to each other, so that the position of the second region 102 farther from the adjacent first region 101 is less influenced by the magnetic field of the first region 101, and the position of the second region 102 closer to the adjacent first region 101 is more influenced by the magnetic field of the first region 101, so that the magnetic repulsive force at the center of the second region 102 is the smallest, the inverse magnetic particles 726 tend to move to the position corresponding to the center of the second region 102, and the colloid moves during the movement of the inverse magnetic particles 726, and therefore, the cross section of the finally formed convex portion 723a has a shape gradually decreasing in height from the center to both sides, and is similar to a convex arc.

Step S12 is more specifically as follows: the substrate 700 is placed under the mask member such that the layer of make glue 720 is under the mask member. Then, moving the mask piece towards the substrate 700, and stopping moving the mask piece when the distance between the mask piece and the substrate 700 reaches a preset distance; so that the first region 101 generates a first repulsive force to the diamagnetic particles in the virgin rubber layer 720; the first repulsive force drives the inverse magnetic particles to shift, so that a convex portion 723a is formed in a region of the original glue layer 720 corresponding to the second region 102, and the original glue layer 720 forms a patterned mask layer 725.

The predetermined distance between the mask member opposite to the virgin rubber layer 720 and the substrate 700 is determined according to the height of the convex portion 723a to be formed later, and is set based on the convex portion 723a not contacting the mask member. That is, a predetermined distance between the mask member positioned above the substrate 700 and the substrate 700 in the drawing is determined according to the height of the convex portion 723a, where the predetermined distance refers to: the distance between the surface of the base 710 facing the raw glue layer 720 and the surface of the mask facing the substrate 700 is understood to mean that the mask does not contact the raw glue layer 720. For example, the height of the protrusion 723a is 3 mm, and specifically, the distance between the highest point of the protrusion 723a and the surface of the substrate 710 facing the gel layer 720 is 3 mm. The distance between the mask member disposed above and the substrate 700 is 3 mm or more, and may be specifically set to 4 mm, 5 mm, 7 mm, and so on.

Since the magnetic particles are the diamagnetic particles 726, the magnetic field of the mask member generates a first repulsive force to the diamagnetic particles 726 located therein. Because the magnetic field strength of the first region 101 of the mask is greater than the magnetic field strength of the second region 102, after the diamagnetic particles 726 are acted by the first repulsion force, the diamagnetic particles 726 on the original glue layer 720 in the region corresponding to the first region 101 move to the region corresponding to the second region 102 with a weaker magnetic field, and in the process of moving the diamagnetic particles 726, the corresponding glue 721 is driven to move, so that the region of the original glue layer 720 corresponding to the first region 101 becomes thinner to form the spacer 724, and the portion of the original glue layer 720 corresponding to the second region 102 protrudes in the direction away from the substrate 710 to form the protrusion 723a, thereby forming the patterned mask layer 725 on the original glue layer 720.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.1 tesla to 50 tesla. For example, the magnetic induction of the mask member is 0.1 tesla, 5 tesla, 10 tesla, 15 tesla, 25 tesla, 35 tesla, 45 tesla, or 50 tesla, etc.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member generates sufficient repulsive force to the magnetic particles, ensure smooth formation of the convex portion 723a, and maintain the thickness of the convex portion 723a within a range in which a suitable micro-nano structure can be formed after etching. The situation that the magnetic induction intensity of the mask piece is not appropriate, so that the thickness of the convex portion 723a is not enough, and the situation that the substrate cannot be etched subsequently and cannot be machined into a micro-nano structure is caused is avoided; alternatively, the protrusion 723a may be too thick, and the micro-nano structure to be etched later may be too deep.

The viscosity of the gel 721 of the make-up layer 720 ranges from 1 pascal-second (Pa · s) to 00 pascal-second (Pa · s). For example, the viscosity of gel 721 of make-up layer 720 is 1 pascal second, 5 pascal seconds, 10 pascal seconds, 20 pascal seconds, 500 pascal seconds, 2000 pascal seconds, 4000 pascal seconds, 6000 pascal seconds, 8000 pascal seconds, 00 pascal seconds, or the like.

The viscosity of the gel 721 of the gel layer 720 is in the above range, and the convex portion 723a can be smoothly formed, and the thickness can be maintained in a range in which the pattern can be etched. To avoid the failure of the formation of the projection 723a or the improper thickness of the projection 723a even if it is formed.

In this embodiment, the mask member is opposite to the virgin rubber layer 720 of the substrate 700, and specifically, the mask member is opposite to the surface of the virgin rubber layer 720 departing from the substrate 710, so that the distance between the mask member and the virgin rubber layer 720 is closer, and the magnetic repulsive force is better applied to the magnetic particles, so that the convex portion 723a is formed quickly, thereby accelerating the production process.

In fig. 6a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than the magnetic field strength of the hollow region 105 (the second region 102), after the diamagnetic particles 726 in the raw rubber layer 720 are subjected to the action of the first repulsion force, the diamagnetic particles 726 in the region corresponding to the shielding region 106 on the raw rubber layer 720 move to the region corresponding to the hollow region 105 with a weaker magnetic field, and in the moving process of the diamagnetic particles 726, the corresponding rubber 721 is driven to move, so that the region corresponding to the shielding region 106 and the raw rubber layer 720 becomes thinner to form a spacer 724, and the portion corresponding to the hollow region 105 and the raw rubber layer 720 protrudes away from the substrate 710 to form a protrusion 723a (a mask 723), thereby forming the raw rubber layer 720 into the patterned mask layer 725.

In fig. 6b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), after the diamagnetic particles 726 in the raw rubber layer 720 are subjected to the action of the first repulsive force, the diamagnetic particles 726 in the region corresponding to the protrusion 204 on the raw rubber layer 720 move to the region corresponding to the recess 203 with a weaker magnetic field, and during the movement of the diamagnetic particles 726, the corresponding colloid 721 is driven to move, so that the region corresponding to the protrusion 204 and the raw rubber layer 720 becomes thinner to form the spacer 724, and the portion corresponding to the recess 203 and the raw rubber layer 720 protrudes away from the substrate 710 to form the protrusion 723a (the mask portion 723), so that the raw rubber layer 720 forms the patterned mask layer 725.

In fig. 6c, since the magnetic field strength of the shielding region 311 (the first region 101) of the mask member 300 is greater than the magnetic field strength of the hollow region 312 (the second region 102), after the diamagnetic particles 726 in the raw rubber layer 720 are subjected to the first repulsion force, the diamagnetic particles 726 in the region corresponding to the shielding region 311 on the raw rubber layer 720 move to the region corresponding to the hollow region 312 with a weaker magnetic field, and in the moving process of the diamagnetic particles 726, the corresponding rubber body 721 is driven to move, so that the region corresponding to the shielding region 311 on the raw rubber layer 720 becomes thinner to form a spacer region 724, and the portion corresponding to the raw rubber layer 720 and the hollow region 312 protrudes in a direction away from the substrate 710 to form a protrusion 723a, thereby forming the patterned layer 720 into the patterned 725.

In fig. 6d, since the electromagnetic element 420 of the mask element 400 generates a magnetic field after being energized, the mask 410 is made to have magnetism, and the magnetic field strength of the protrusion 411 (the first region 101) is greater than the magnetic field strength of the recess 412 (the second region 102), so that after the diamagnetic particles 726 in the raw adhesive layer 720 are acted by the first repulsion force, the diamagnetic particles 726 in the region corresponding to the protrusion 411 on the raw adhesive layer 720 move to the region corresponding to the recess 412 with a weaker magnetic field, and during the movement of the diamagnetic particles 726, the corresponding colloid 721 is driven to move, so that the region corresponding to the protrusion 411 on the raw adhesive layer 720 becomes thinner to form a spacer 724, and the portion corresponding to the recess 412 on the raw adhesive layer 720 protrudes away from the substrate 710 to form a protrusion 723a (a mask 723), thereby forming the patterned mask layer 725 on the raw adhesive layer 720.

In fig. 6e, since the electromagnetic element 520 of the mask element 500 is energized to generate a magnetic field, the mask plate 510 is made to have magnetism, and the magnetic field strength of the shielding region 511 (the first region 101) is greater than the magnetic field strength of the hollow-out region 512 (the second region 102), so that after the diamagnetic particles 726 in the raw rubber layer 720 are acted by the first repulsive force, the diamagnetic particles 726 in the region corresponding to the shielding region 511 on the raw rubber layer 720 move to the region corresponding to the hollow-out region 512 with a weaker magnetic field, and in the moving process of the diamagnetic particles 726, the corresponding rubber body 721 is driven to move, so that the region corresponding to the shielding region 511 of the raw rubber layer 720 becomes thinner to form 724, and the portion corresponding to the hollow-out region 512 of the raw rubber layer 720 protrudes in a direction away from the base 710 to form a protruding portion 723a (a mask portion 723), thereby forming a patterned mask layer 725 in the raw rubber layer 720.

In fig. 6f, after the electromagnetic element 620 of the mask element 600 is energized, a magnetic field is generated, so that the mask plate 610 has magnetism, and the magnetic field strength of the first region 101 is greater than that of the second region 102, so that after the diamagnetic particles 726 are acted by a first repulsion force, the diamagnetic particles 726 in the region corresponding to the first region 101 on the raw glue layer 720 move to the region corresponding to the second region 102 with a weaker magnetic field, and during the movement of the diamagnetic particles 726, the corresponding colloid 721 is driven to move, so that the region corresponding to the first region 101 on the raw glue layer 720 becomes thinner to form a spacer 724, and the portion corresponding to the second region 102 on the raw glue layer 720 protrudes away from the substrate 710 to form a protrusion 723a (mask portion 723), so that the raw glue layer 720 forms the patterned mask layer 725.

Referring to fig. 7a and 7b, fig. 7a and 7b are schematic structural diagrams of another mask member opposite to a substrate in the method for manufacturing the micro-nano layer structure shown in fig. 2. In this embodiment, the mask member in fig. 7a is the mask member in fig. 3a, and the mask member in fig. 7b is the mask member in fig. 3 f. In other embodiments, the mask above the substrate 700 may be the mask shown in any one of fig. 3b to 3 e. The mask member under the substrate 700 may be the mask member shown in any one of fig. 3b to 3 e.

Referring to fig. 8a and 8b, fig. 8a and 8b are schematic diagrams of forming a mask portion on a substrate by using a magnetic field corresponding to the mask of fig. 7a and 7 b.

In another embodiment, the number of the mask pieces is two; the magnetic particles are diamagnetic particles. Step S12 specifically includes: the step of making the mask member and the substrate opposite to each other, and the magnetic force of the first region driving the magnetic particles corresponding to the first region to move, includes: placing the substrate between the two mask pieces so that the original rubber layer is opposite to one of the mask pieces and the base body is opposite to the other mask piece; the first repulsive force of the first region of one of the mask members and the second repulsive force of the first region of the other of the mask members drive the magnetic particles corresponding to the first regions to move.

Although the magnetic field strength of the second regions 102 of the two mask members is small, it is also possible to generate the above-mentioned second magnetic force acting on the diamagnetic particles 726, wherein the second region 102 of one mask member generates a third repulsive force to the diamagnetic particles 726 in the virgin rubber layer 720, the second region 102 of the other mask member generates a fourth repulsive force to the diamagnetic particles 726 in the virgin rubber layer 720, and the second magnetic force includes the third repulsive force and the fourth repulsive force. However, the third repulsive force is much smaller than the first repulsive force, the fourth repulsive force is much smaller than the second repulsive force, the third repulsive force and the fourth repulsive force can approach 0, and the first repulsive force, the second repulsive force, the third repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726 corresponding to the first region 101 can rapidly move to correspond to the second region 102, thereby increasing the manufacturing efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

In the present embodiment, the first repulsive force is 100 times as large as the third repulsive force, and the second repulsive force is 100 times as large as the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. the third repulsive force, and the second repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. the fourth repulsive force.

The first repulsive force and the second repulsive force drive the inverse magnetic particles 726 to displace, so that a convex portion 723a and a concave portion are formed on the original rubber layer 720, the patterned mask layer 725 is formed on the original rubber layer 720, and the convex portion 723a is the mask portion 723. That is, the magnetic particles 722 at this time are the inverse magnetic particles 726, the first magnetic force includes a first repulsive force and a second repulsive force, and the convex portion 723a is formed in the region of the virgin rubber layer 720 corresponding to the second region 102.

Since the magnetic particles are diamagnetic particles 726, the magnetic field of the mask member generates a first repulsive force and a second repulsive force to the diamagnetic particles 726 located therein. Because the magnetic field strength of the first region 101 of the mask is greater than that of the second region 102, after the diamagnetic particles 726 are subjected to the first repulsion force and the second repulsion force, the diamagnetic particles 726 in the region corresponding to the first region 101 on the original glue layer 720 move to the region corresponding to the second region 102 with a weaker magnetic field, and in the moving process of the diamagnetic particles 726, the corresponding glue 721 is driven to move, so that the region corresponding to the original glue layer 720 and the first region 101 becomes thinner to form a spacer region 724, and the part corresponding to the original glue layer 720 and the second region 102 protrudes in the direction away from the substrate 710 to form a protrusion 723a, thereby forming the patterned mask layer 725 on the original glue layer 720.

Step S12 is more specifically as follows: the substrate 700 is placed between two mask members such that the virgin rubber layer 720 of the substrate 700 is opposite to one of the mask members and the base 710 of the substrate 700 is opposite to the other mask member. Then, moving both the mask pieces towards the direction of the substrate 700, and stopping moving the mask pieces above the substrate 700 when the distance between the mask pieces above the substrate 700 and the substrate 700 is a first preset distance; when the distance between the mask member under the substrate 700 and the substrate 700 is a second preset distance, the mask member under the substrate 700 stops moving. So that the first region 101 of one mask member generates a first repulsive force to the diamagnetic particles in the raw rubber layer 720; the first region 101 of the other mask member generates a second repulsive force to the diamagnetic particles in the raw rubber layer 720; the first repulsive force and the second repulsive force drive the inverse magnetic particles to shift, so that a convex portion 723a is formed in a region of the original glue layer 720 corresponding to the second region 102, and the original glue layer 720 forms the patterned mask layer 725.

A first predetermined distance between the mask member opposite to the virgin rubber layer 720 and the substrate 700 is determined according to the height of the convex portion 723a to be formed later, and is set on the basis that the convex portion 723a is not in contact with the mask member. That is, a first predetermined distance between the mask member above the substrate 700 and the substrate 700 in the drawing is determined according to the height of the convex portion 723a, where the first predetermined distance refers to: the distance between the surface of the base 710 facing the layer 720 of make-up adhesive and the surface of the mask facing the substrate 700. For example, the height of the protrusion 723a is 3 mm, and specifically, the distance between the highest point of the protrusion 723a and the surface of the substrate 710 facing the raw adhesive layer 720 is 3 mm. The distance between the mask member disposed above and the substrate 700 is 3 mm or more, and may be specifically set to 4 mm, 5 mm, 7 mm, and so on.

The second predetermined distance between the mask member opposite the base 710 and the substrate 700 is based on the base 710 not contacting the mask member. That is, the second predetermined distance between the mask member under the substrate 700 and the substrate 700 is determined by the fact that the two are not in contact with each other. The second preset distance here refers to: the distance between the surface of the base 710 facing away from the raw photoresist layer 720 and the surface of the mask member facing the substrate 700 located below the substrate 700. For ease of control, the second predetermined distance is set to 2 mm, 3 mm, 4 mm, etc.

In this embodiment, the magnetic induction range of the mask is between 0.1 tesla and 50 tesla. For example, the magnetic induction of the mask member is 0.1 tesla, 5 tesla, 10 tesla, 15 tesla, 25 tesla, 35 tesla, 45 tesla, or 50 tesla, etc.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member generates sufficient repulsive force to the magnetic particles, ensure smooth formation of the convex portion 723a, and maintain the thickness of the convex portion 723a within a range in which a suitable micro-nano structure can be formed after etching. The situation that the projection 723a is not thick enough due to improper magnetic induction intensity of the mask piece and cannot be machined into a micro-nano structure due to the fact that a substrate cannot be etched subsequently is avoided; alternatively, the convex portion 723a may have an excessively thick thickness, which may result in an excessively deep micro-nano structure to be subsequently etched.

The viscosity of the gel 721 of the make-up layer 720 ranges from 1 pascal-second (Pa · s) to 00 pascal-second (Pa · s). For example, the viscosity of gel 721 of make-up layer 720 is 1 pascal second, 5 pascal seconds, 10 pascal seconds, 20 pascal seconds, 500 pascal seconds, 2000 pascal seconds, 4000 pascal seconds, 6000 pascal seconds, 8000 pascal seconds, 00 pascal seconds, and the like.

The viscosity of the gel 721 of the gel layer 720 is in the above range, and the convex portion 723a can be smoothly formed, and the thickness can be maintained in a range in which the pattern can be etched. The convex portion 723a is prevented from failing to be formed, or even if it is formed, the thickness of the convex portion 723a is not appropriate.

In this embodiment, one of the mask members is opposite to the raw rubber layer 720 of the substrate 700, specifically, one of the mask members is opposite to a surface of the raw rubber layer 720 away from the base 710, the other of the mask members is opposite to the base 710 of the substrate 700, specifically, the other of the mask members is opposite to a surface of the base 710 opposite to the raw rubber layer 720, respective first regions 101 of the two mask members are opposite, respective second regions 102 of the two mask members are opposite, so that both the two mask members can generate repulsive force to the diamagnetic particles 726, and the repulsive force is stronger, so that the diamagnetic particles can move from a region corresponding to the first region 101 to a region corresponding to the second region 102 more quickly, so that the convex portion 723a is formed quickly, thereby accelerating the production process.

In fig. 8a, since the shielding region 106 (first region 101) of the two mask pieces 100 has a magnetic field strength greater than that of the hollowed-out region 105 (second region 102), the diamagnetic particles 726 in the gel layer 720 are subjected to the first repulsive force exerted by the mask member 100 above, and after the second repulsive force applied by the lower mask member 100, the inverse magnetic particles 726 in the area corresponding to the shielding areas 106 of the two mask members 100 on the original adhesive layer 720 move to the area corresponding to the hollow areas 105 of the two mask members 100 with weaker magnetic field, and in the moving process of the inverse magnetic particles 726, the corresponding colloid 721 is driven to move, so that the areas of the virgin rubber layer 720 corresponding to the shielding areas 106 of the two mask members 100 become thinner to form the spacing areas 724, and the portions of the virgin rubber layer 720 corresponding to the hollow areas 105 of the two mask members 100 protrude in the direction away from the substrate 710 to form the protruding portions 723a, thereby forming the patterned mask layer 725 on the virgin rubber layer 720.

In fig. 8b, after the electromagnetic element 620 is energized, the mask plate 610 is magnetized and forms a magnetic field, the magnetic field strength of the first region 101 of the mask member 600 is greater than that of the second region 102, so that the diamagnetic particles 726 in the original adhesive layer 720 are subjected to a first repulsive force applied by the upper mask member 600 and a second repulsive force applied by the lower mask member 600, the diamagnetic particles 726 in the region corresponding to the first regions 101 of the two mask members 600 on the original adhesive layer 720 move to the region corresponding to the second regions 102 of the two mask members 600 with weaker magnetic field, during the movement of the diamagnetic particles 726, the corresponding colloid 721 is driven to move, so that the region corresponding to the first regions 101 of the two mask members 600 of the original adhesive layer 720 becomes thinner to form spacers 724, the region corresponding to the second regions 102 of the two mask members 600 of the original adhesive layer 720 protrudes away from the substrate 710 to form a protrusion 723a, thereby forming a patterned mask layer 725 from the photoresist layer 720.

Referring to fig. 9a, 9b, 9c, 9d, 9e and 9f, fig. 9a to 9f are schematic structural diagrams of a mask member and a substrate facing each other in the method for fabricating a micro/nano layer structure shown in fig. 2. The masking members in fig. 9 a-9 f correspond to the masking members in fig. 3 a-3 f, respectively.

Referring to fig. 10a, 10b, 10c, 10d, 10e and 10f, fig. 10a and 10f are schematic diagrams of forming a mask portion on a substrate by using a magnetic field corresponding to the mask in fig. 9a to 9 f.

In yet another embodiment, the magnetic particles 722 are paramagnetic particles 727. Step S12 specifically includes: the first region 101 generates an attractive force on the paramagnetic particle 727, and the attractive force drives the paramagnetic particle 727 to move toward a region corresponding to the first region 101, thereby forming a mask portion 723 corresponding to the first region 101 and forming a spacer 724 corresponding to the second region 102. The mask 723 is a protrusion 723a protruding away from the substrate, and the spacer 724 is a recess sinking toward the substrate. The convex portion 723a has a greater thickness than the concave portion.

The attraction force generated by the first region 101 is referred to as a first attraction force, and the first attraction force drives the paramagnetic particles 727 to displace, so that a convex portion 723a and a concave portion are formed on the raw rubber layer 720, and the convex portion 723a is the mask portion 723, so that the raw rubber layer 720 forms the patterned mask layer 725. That is, in this case, the magnetic particles 722 are paramagnetic particles 727, the magnetic force generated by the first region 101 is referred to as a first magnetic force, the first magnetic force is a first attractive force, and the convex portion 723a is formed in the region of the virgin rubber layer 720 corresponding to the first region 101.

Although the magnetic field strength of the second region 102 is small, it is possible to generate a second magnetic force acting on the paramagnetic particles 727, where the second magnetic force is a second attractive force, but the second attractive force is much smaller than the first attractive force, and the second attractive force approaches 0. So that the paramagnetic particles 727 corresponding to the second region 102 can rapidly move to correspond to the first region 101, thereby accelerating the preparation efficiency.

The first adsorption capacity is between 5 and 200 times the second adsorption capacity. In the present embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first sorption capacity is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. the second sorption capacity.

It is understood that the attracting force is the greatest at the center of the first region 101 and the paramagnetic particles 727 tend to move toward a position corresponding to the center of the first region 101, and thus the cross section of the finally formed convex portion 723a has a shape gradually decreasing in height from the center toward both sides, like a convex arc.

Step S12 more specifically includes: the substrate 700 is placed under the mask member such that the layer of make glue 720 is under the mask member. Then, moving the mask piece towards the substrate 700, and stopping moving the mask piece when the distance between the mask piece and the substrate 700 is a preset distance; so that the first region 101 generates a first adsorption force on the paramagnetic particles in the virgin rubber layer 720; the first attraction drives the inverse magnetic particles to shift, so that a protrusion 723a is formed on the area of the original adhesive layer 720 corresponding to the first area 101, and the original adhesive layer 720 forms a patterned mask layer 725.

The preset distance is determined according to the height of the convex portion 723a to be formed later, and is set based on the convex portion 723a not contacting the mask member. For the specific preset distance, reference is made to the above embodiments, and details are not repeated.

Because the magnetic particles are paramagnetic particles 727, the magnetic field of the mask member generates a first attraction force on the paramagnetic particles 727 positioned therein. Because the magnetic field strength of the first region 101 of the mask is greater than the magnetic field strength of the second region 102, after the paramagnetic particles 727 are subjected to a first adsorption force, the paramagnetic particles 727 in the region corresponding to the second region 102 on the raw glue layer 720 move to the region corresponding to the first region 101 with a stronger magnetic field, and in the moving process of the paramagnetic particles 727, the corresponding glue 721 is driven to move, so that the region corresponding to the raw glue layer 720 and the second region 102 becomes thinner to form a spacer 724, and the portion corresponding to the first region 101 of the raw glue layer 720 protrudes in the direction away from the substrate 710 to form a protrusion 723a, thereby enabling the raw glue layer 720 to form the patterned mask layer 725.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member generates sufficient adsorption force to the magnetic particles, ensure smooth formation of the convex portion 723a, and maintain the thickness of the convex portion 723a within a range that a suitable micro-nano structure can be formed after etching. The situation that the projection 723a is not thick enough due to improper magnetic induction intensity of the mask piece and cannot be machined into a micro-nano structure due to the fact that a substrate cannot be etched subsequently is avoided; alternatively, the convex portion 723a may have an excessively thick thickness, which may result in an excessively deep micro-nano structure to be subsequently etched.

The viscosity of the gel 721 of the gel layer 720 is in the above range, so that the convex portion 723a can be smoothly formed, and the thickness is maintained in a range in which the pattern can be etched. To avoid the failure of the formation of the projection 723a or the improper thickness of the projection 723a even if it is formed.

In this embodiment, the mask member is opposite to the virgin rubber layer 720 of the substrate 700, and specifically, the mask member is opposite to the surface of the virgin rubber layer 720 departing from the substrate 710, so that the distance between the mask member and the virgin rubber layer 720 is closer, but the mask member is not in contact with the virgin rubber layer, so that the adsorption force is better applied to the magnetic particles, so that the convex portion 723a is formed quickly, and the production progress is accelerated.

In fig. 10a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than the magnetic field strength of the hollow region 105 (the second region 102), after the paramagnetic particles 727 in the raw material layer 720 are subjected to the first adsorption force, the paramagnetic particles 727 in the region corresponding to the hollow region 105 on the raw material layer 720 move to the region corresponding to the shielding region 106 with a stronger magnetic field, and in the moving process of the paramagnetic particles 727, the corresponding colloid 721 is driven to move, so that the region corresponding to the hollow region 105 and the raw material layer 720 becomes thinner to form a spacing region 724, and the portion corresponding to the shielding region 106 and the raw material layer 720 protrudes in a direction away from the base body 710 to form a protrusion 723a, thereby forming the patterned mask layer 725 on the raw material layer 720.

In fig. 10b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), after the paramagnetic particles 727 in the raw adhesive layer 720 are subjected to the first adsorption force, the paramagnetic particles 727 in the region corresponding to the recess 203 on the raw adhesive layer 720 move to the region corresponding to the protrusion 204 with a stronger magnetic field, and in the process of moving the paramagnetic particles 727, the corresponding colloid 721 is driven to move, so that the region corresponding to the recess 203 and the raw adhesive layer 720 become thinner to form a spacer 724, and the portion corresponding to the protrusion 204 and the raw adhesive layer 720 protrudes away from the base 710 to form a protrusion 723a, thereby forming the patterned mask layer 725 on the raw adhesive layer 720.

In fig. 10c, since the magnetic field strength of the shielding region 311 (the first region 101) of the mask member 300 is greater than the magnetic field strength of the hollow-out region 312 (the second region 102), after the paramagnetic particles 727 in the raw rubber layer 720 are subjected to the first adsorption force, the paramagnetic particles 727 in the raw rubber layer 720 in the region corresponding to the hollow-out region 312 move to the region corresponding to the shielding region 311 with a stronger magnetic field, and in the moving process of the paramagnetic particles 727, the corresponding colloid 721 is driven to move, so that the region corresponding to the raw rubber layer 720 and the hollow-out region 312 becomes thinner to form a spacing region 724, and the portion corresponding to the raw rubber layer 720 and the shielding region 311 protrudes in the direction away from the base 710 to form a protrusion 723a, thereby forming the patterned mask layer 725 on the raw rubber layer 720.

In fig. 10d, since the magnetic field strength of the protrusion 411 (the first region 101) of the mask 400 is greater than the magnetic field strength of the recess 412 (the second region 102), after the paramagnetic particles 727 in the raw adhesive layer 720 are subjected to the first adsorption force, the paramagnetic particles 727 in the region corresponding to the recess 412 on the raw adhesive layer 720 move to the region corresponding to the protrusion 411 with the stronger magnetic field, and in the process of moving the paramagnetic particles 727, the corresponding colloid 721 is driven to move, so that the region corresponding to the recess 412 and the raw adhesive layer 720 becomes thinner to form the spacer 724, and the portion corresponding to the protrusion 411 of the raw adhesive layer 720 protrudes away from the substrate 710 to form the protrusion 723a, thereby forming the patterned mask layer 725 on the raw adhesive layer 720.

In fig. 10e, since the magnetic field strength of the shielding region 511 (the first region 101) of the mask member 500 is greater than the magnetic field strength of the hollow-out region 512 (the second region 102), after the paramagnetic particles 727 in the raw rubber layer 720 is subjected to the first adsorption force, the paramagnetic particles 727 in the raw rubber layer 720 in the region corresponding to the hollow-out region 512 move to the region corresponding to the shielding region 511 with a stronger magnetic field, and in the moving process of the paramagnetic particles 727, the corresponding colloid 721 is driven to move, so that the region corresponding to the raw rubber layer 720 and the hollow-out region 512 becomes thinner to form a spacing region 724, and the portion corresponding to the shielding region 511 of the raw rubber layer 720 and the substrate 710 protrudes to form a protrusion 723a, so that the raw rubber layer 720 forms the patterned mask layer 725.

In fig. 10f, since the magnetic field strength of the first region 101 of the mask 600 is greater than the magnetic field strength of the second region 102, after the paramagnetic particles 727 in the raw rubber layer 720 is subjected to the first adsorption force, the paramagnetic particles 727 in the region corresponding to the second region 102 on the raw rubber layer 720 move to the region corresponding to the first region 101 with weaker magnetic field, and in the moving process of the paramagnetic particles 727, the corresponding rubber body 721 is driven to move, so that the region corresponding to the raw rubber layer 720 and the second region 102 becomes thinner to form a spacer region 724, and the portion corresponding to the first region 101 of the raw rubber layer 720 protrudes away from the base body 710 to form a protrusion 723a, thereby forming the patterned mask layer 725 on the raw rubber layer 720.

Referring to fig. 11a and 11b, fig. 11a and 11b are schematic structural diagrams illustrating a mask member and a substrate facing each other in the method for manufacturing the micro-nano layer structure shown in fig. 2. The masking members in fig. 11a and 11b correspond to the masking members in fig. 3a and 3b, respectively. In other embodiments, the mask member of fig. 3c to 3f may be used.

Referring to fig. 12a and 12b, fig. 12a and 12b are schematic diagrams illustrating that the mask part of fig. 11a and 11b is formed on the substrate by a magnetic field.

In another embodiment of the present disclosure, the substrate 700a includes a substrate 700a including a base 710a and a raw glue layer 720a disposed on the base 710a, the raw glue layer 720a includes a glue 721a and magnetic particles 722a, and the magnetic particles 722a are diamagnetic particles or paramagnetic particles. The magnetic particles 722a are doped in the colloid 721 a. The diamagnetic particles are made of one or more of gold, silver, copper, lead and the like. When the diamagnetic particles are in the magnetic field, they will escape to areas where the magnetic field is weaker or to areas where there is no magnetic field. The paramagnetic particles are made of one or more of ferroferric oxide, iron, cobalt and nickel, and tend to move to a region with a stronger magnetic field when being positioned in the magnetic field.

That is, the substrate 700a has substantially the same structure as the substrate 700 in the above embodiment, except that the viscosity range of the raw rubber layer 700a is different, which will be described in detail below.

Step S12 specifically includes: the photoresist layer 720a is patterned, the first region 101 generates a repulsive force to the inverse magnetic particles 726a, the repulsive force drives the inverse magnetic particles 726a to move to a region corresponding to the second region 102, a mask portion 723b corresponding to the second region 102 is formed, and a spacer 724b corresponding to the first region 101 is formed. The mask portion 723b is a magnetic particle aggregation portion, and the spacer 724b is a magnetic particle rarefaction portion; the concentration of magnetic particles at the magnetic particle concentration portion is greater than that of the magnetic particle sparse portion. The mask member is opposed to the substrate 700a, and the first magnetic force generated by the first region 101 is a first repulsive force; the second magnetic force generated by the second region 102 is a second repulsive force, wherein the second repulsive force is smaller than the first repulsive force, and the second repulsive force is close to 0.

The repulsive force generated by the first region 101 is referred to as a first repulsive force, and the first repulsive force drives the inverse magnetic particles 726a to displace, so that the gel layer 720a forms a mask portion 723b (a magnetic particle aggregation portion) and a spacer portion 724b (a magnetic particle rarefaction portion), so that the gel layer 720a forms a patterned mask layer 725 a. That is, the magnetic particles 722a are the inverse magnetic particles 726a, the first magnetic force is the first repulsive force, and the mask portion 723b is formed in the region of the original rubber layer 720a corresponding to the second region 102. Although the mask portion 723b has a thickness that is unchanged from that of the original photoresist layer 720a, the number of the diamagnetic particles 726a increases, that is, the diamagnetic particles 726a are collected in the mask portion 723 b.

Although the magnetic field strength of the second region 102 is small, it is also possible to generate a second magnetic force acting on the diamagnetic particles 726a, wherein the second magnetic force is a second repulsive force, the second repulsive force is smaller than the first repulsive force, and the second repulsive force can approach 0. So that the inverse magnetic particles 726a corresponding to the first region 101 can be rapidly moved to correspond to the second region 102, thereby accelerating the manufacturing efficiency. The first repulsive force is between 5 and 200 times the second repulsive force. In the present embodiment, the first repulsive force is 100 times as large as the second repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. the second repulsive force.

Step S12 more specifically includes: the substrate 700a is placed under the mask member such that the gel layer 720a is located under the mask member. Then, moving the mask piece towards the substrate 700a, and stopping moving the mask piece when the distance between the mask piece and the substrate 700a is a preset distance; so that the first region 101 generates a first repulsive force to the diamagnetic particles in the raw rubber layer 720 a; the first repulsive force drives the inverse magnetic particles to shift, so that a mask portion 723b is formed in a region of the original glue layer 720a corresponding to the second region 102, and the original glue layer 720a forms a patterned mask layer 725 a.

The preset distance is determined according to the height of the subsequently formed mask portion 723b, and is set on the basis that the mask portion 723b is not in contact with the mask member. That is, the preset distance between the mask member located above the substrate 700a and the substrate 700a in the figure is determined according to the height of the mask portion 723b, where the preset distance refers to: the distance between the surface of the base 710a facing the layer 720a of make-up glue and the surface of the mask facing the substrate 700 a. For example, the height of the mask portion 723b is 3 mm, and specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the raw adhesive layer 720a is 3 mm. The distance between the mask member a disposed above and the substrate 700a is set to be 3 mm or more, and specifically, may be set to be 4 mm, 5 mm, 7 mm, and the like.

In this embodiment, the magnetic particles are the diamagnetic particles 726a, and the magnetic field of the mask member generates a first repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field strength of the first region 101 of the mask member is greater than that of the second region 102, when the diamagnetic particles 726a on the virgin rubber layer 720a are subjected to the first repulsive force, the diamagnetic particles 726a in the region corresponding to the first region 101 move to the region corresponding to the second region 102 with a weaker magnetic field, the number of the diamagnetic particles 726a in the region corresponding to the virgin rubber layer 720a and the first region 101 decreases, the spacer 724b is formed, the diamagnetic particles 726a in the region corresponding to the virgin rubber layer 720a and the second region 102 are gathered, the mask portion 723b is formed, and the patterned mask layer 725a is formed on the virgin rubber layer 720 a. The reverse magnetic particles 726a at the spacer region 724b are less in number and arranged less densely, even without the reverse magnetic particles 726 a. The thickness of the mask portion 723b is equal to that of the spacer region 724 b.

In this embodiment, the magnetic induction intensity of the mask member ranges from 0.01 tesla to 5 tesla. For example, the mask member has a magnetic induction of 0.01 tesla, 0.5 tesla, 1 tesla, 2 tesla, 2.5 tesla, 3 tesla, 4 tesla, or 5 tesla, and the like.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member can generate sufficient adsorption force to the magnetic particles, ensure the smooth formation of the mask portion 723b, and keep the density of the inverse magnetic particles 726a of the mask portion 723b within the range that a proper micro-nano structure can be formed after etching. The situation that the density of the inverse magnetic particles 726a at the position of the mask portion 723b is not enough due to the fact that the magnetic induction intensity of the mask piece is not appropriate, and the situation that the substrate cannot be etched subsequently and cannot be machined into a micro-nano structure is caused is avoided; alternatively, the inverse magnetic particles 726a in the mask portion 723b may be too dense, and the micro-nano structure to be etched later may be too deep.

The viscosity of the gel 721a of the make-up layer 720a ranges from 0.001 pascal seconds (Pa · s) to Pa · s. For example, the viscosity of gel 721a of make-up layer 720a is 0.001 pascal seconds, 5 pascal seconds, 10 pascal seconds, 20 pascal seconds, 30 pascal seconds, 40 pascal seconds, 50 pascal seconds, 60 pascal seconds, 70 pascal seconds, 80 pascal seconds, and the like.

The viscosity of the colloid 721a of the raw adhesive layer 720a is in the above range, so that the mask portion 723b can be smoothly formed, and the density of the diamagnetic particles 726a is maintained in a range in which the pattern can be etched. Failure in forming the mask portion 723b is avoided, or even if formed, the magnetic particles of the mask portion 723b are not suitably concentrated.

The present embodiment uses the density of the diamagnetic particles 726a to distinguish the mask portion 723b and the spacers 724b, and the thickness of the mask portion 723b and the thickness of the spacers 724b are equal to each other and are consistent with the thickness of the photoresist layer 720a before the mask portion 723b and the spacers 724b are formed. In the process of forming the mask portion 723b, the mask piece is not in contact with the original glue layer 720a, so that the product cleanliness is increased, and the yield is improved.

In fig. 12a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than the magnetic field strength of the hollow region 105 (the second region 102), after the diamagnetic particles 726a in the raw rubber layer 720a are subjected to the first repulsion force, the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the shielding region 106 move to the region corresponding to the hollow region 105 with a weaker magnetic field, so that the number of the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the shielding region 106 is reduced, thereby forming the spacing region 724b, and the number of the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the hollow region 105 is increased, thereby forming the mask portion 723b, and further forming the patterned mask layer 725a in the raw rubber layer 720 a.

In fig. 12b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), after the first repulsive force acts on the diamagnetic particles 726a in the raw rubber layer 720a, the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the protrusion 204 move to the region corresponding to the recess 203 with a weaker magnetic field, so that the number of the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the protrusion 204 is reduced, thereby forming the spacer region 724b, and the number of the diamagnetic particles 726a in the region of the raw rubber layer 720a corresponding to the recess 203 is increased, thereby forming the mask portion 723b, and further forming the patterned mask layer 725a on the raw rubber layer 720 a.

Referring to fig. 13a and 13b, fig. 13a and 13b are schematic structural diagrams of a mask member and a substrate in another structure in the method for manufacturing the micro-nano layer structure shown in fig. 2. In this embodiment, the mask member in fig. 13a and 13b corresponds to the mask member in fig. 3a and 3b, respectively. In other embodiments, the mask members of fig. 3 c-3 f may also be used.

Referring to fig. 14a and 14b, fig. 14a and 14b are schematic diagrams illustrating that the mask part in fig. 13a and 13b is formed on the substrate by using a magnetic field.

In another embodiment of the present application, the number of the mask members is two; the magnetic particles 722a are diamagnetic particles 726 a. Step S12 is specifically: the method comprises the following steps: the step of making the mask member and the substrate opposite to each other, and the magnetic force of the first region driving the magnetic particles corresponding to the first region to move, includes: placing the substrate between the two mask pieces so that the original rubber layer is opposite to one of the mask pieces and the base body is opposite to the other mask piece; the first repulsive force of the first region of one of the mask members and the second repulsive force of the first region of the other mask member drive the magnetic particles corresponding to the first regions to move.

Although the magnetic field strength of the second regions 102 of the two mask members is smaller, it is also possible to generate a second magnetic force acting on the diamagnetic particles 726a, wherein the second region 102 of one mask member generates a third repulsive force to the diamagnetic particles 726a in the virgin rubber layer 720a, the second region 102 of the other mask member generates a fourth repulsive force to the diamagnetic particles 726a in the virgin rubber layer 720a, and the second magnetic force includes the third repulsive force and the fourth repulsive force. But the third repulsive force is much smaller than the first repulsive force and the fourth repulsive force is much smaller than the second repulsive force, the third repulsive force and the fourth repulsive force can approach 0, and the first repulsive force, the second repulsive force, the third repulsive force and the fourth repulsive force are generated simultaneously. Therefore, the second magnetic force is much smaller than the first magnetic force, so that the diamagnetic particles 726a corresponding to the first region 101 can rapidly move to correspond to the second region 102, thereby increasing the manufacturing efficiency. The first repulsive force is between 5 and 200 times the third repulsive force, and the second repulsive force is between 5 and 200 times the fourth repulsive force.

In this embodiment, the first repulsive force is 100 times the third repulsive force, and the second repulsive force is 100 times the fourth repulsive force. In other embodiments, the first repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. of the third repulsive force, and the second repulsive force is 5 times, 10 times, 20 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc. of the fourth repulsive force.

The first and second repulsive forces drive the inverse magnetic particles 726a to be displaced, so that the raw adhesive layer 720a forms mask portions 723b (magnetic particle dense portions) and spacer portions 724b (magnetic particle sparse portions) to form a patterned mask layer 725a on the raw adhesive layer 720 a. That is, the magnetic particles 722a at this time are the inverse magnetic particles 726a, the first magnetic force includes the first repulsive force and the second repulsive force, and the mask portion 723b is formed in the region of the virgin rubber layer 720a corresponding to the second region 102. Although the mask portion 723b has a thickness that is unchanged from that of the original photoresist layer 720a, the number of the diamagnetic particles 726a increases, that is, the diamagnetic particles 726a are collected in the mask portion 723 b.

Specifically, since the magnetic particles are the diamagnetic particles 726a, the magnetic field of the mask member generates a first repulsive force and a second repulsive force on the diamagnetic particles 726a located therein. Since the magnetic field strength of the first region 101 of the mask member is greater than the magnetic field strength of the second region 102, after the diamagnetic particles 726a are subjected to the first repulsion force and the second repulsion force, the diamagnetic particles 726a in the region corresponding to the first region 101 on the original rubber layer 720a move to the region corresponding to the second region 102 with a weaker magnetic field, the number of the diamagnetic particles 726a in the region corresponding to the first region 101 on the original rubber layer 720a is reduced, the spacer regions 724b are formed, the diamagnetic particles 726a in the region corresponding to the second region 102 on the original rubber layer 720a are gathered, the mask portion 723b is formed, and the original rubber layer 720a forms the patterned mask layer 725 a. The spacer 724b has a smaller number of the diamagnetic particles 726a and is less densely arranged, even without the diamagnetic particles 726 a.

More specific steps of step S12 are as follows: the substrate 700a is placed between two mask members such that the virgin rubber layer 720a of the substrate 700a is opposite to one of the mask members and the base 710a of the substrate 700a is opposite to the other mask member. Moving both the mask pieces towards the direction of the substrate 700a, and stopping moving the mask piece above when the distance between the mask piece above the substrate 700a and the substrate 700a is a first preset distance; when the distance between the mask member positioned below the substrate 700a and the substrate 700a is a second preset distance, stopping moving the mask member positioned below the substrate 700 a; so that the first region 101 of the upper mask member generates a first repulsive force to the diamagnetic particles in the raw rubber layer 720 a; the first region 101 of the other underlying mask member generates a second repulsive force to the diamagnetic particles in the raw rubber layer 720 a; the first repulsive force and the second repulsive force drive the inverse magnetic particles to displace, so that a mask portion 723b is formed in a region of the raw glue layer 720a corresponding to the second region 102, and the patterned mask layer 725a is formed on the raw glue layer 720 a.

A first predetermined distance between the mask member opposite to the virgin rubber layer 720a and the substrate 700a is determined according to the height of the formed mask portion 723b, and is set on the basis that the mask portion 723b is not in contact with the mask member. That is, a first predetermined distance between the mask member above the substrate 700 and the substrate 700a in the drawing is determined according to the height of the mask portion 723b, where the first predetermined distance refers to: the distance between the surface of the base 710a facing the layer 720a of make-up glue and the surface of the mask facing the substrate 700 a. For example, the height of the mask portion 723b is 3 mm, and specifically, the distance between the surface of the mask portion 723b facing away from the substrate 710a and the surface of the substrate 710a facing the raw rubber layer 720a is 3 mm. The distance between the mask member disposed above and the substrate 700a may be 3 mm or more, and specifically, may be set to be 4 mm, 5 mm, 7 mm, or the like.

The second predetermined distance between the mask member opposite to the base 710a and the substrate 700a is determined based on the base 710a not contacting the mask member. That is, the second predetermined distance between the mask member under the substrate 700a and the substrate 700a is determined by the fact that the two are not in contact. The second preset distance here refers to: the distance between the surface of the base 710a opposite to the raw photoresist layer 720a and the surface of the mask member facing the substrate 700a under the substrate 700 a. For ease of control, the second predetermined distance is set to 2 mm, 3 mm, 4 mm, etc.

In this embodiment, the magnetic induction range of the mask member is between 0.01 tesla and 5 tesla. For example, the mask member has a magnetic induction of 0.01 tesla, 0.5 tesla, 1 tesla, 2 tesla, 2.5 tesla, 3 tesla, 4 tesla, or 5 tesla, and the like.

The magnetic induction intensity of the mask member is within the above range, which can ensure that the mask member generates sufficient adsorption force on the magnetic particles, ensure the smooth formation of the mask portion 723b, and keep the density of the inverse magnetic particles 726a of the mask portion 723b within a range that a suitable micro-nano structure can be formed after etching. The situation that the density of the inverse magnetic particles 726a at the mask portion 723b is not enough and subsequent etching cannot reach the substrate to cause failure in processing into a micro-nano structure due to improper magnetic induction intensity of the mask piece is avoided; alternatively, the diamagnetic particles 726a may be too dense in the mask portion 723b, which may result in a too deep micro-nano structure for subsequent etching.

The viscosity of the gel 721a of the make-up layer 720a ranges from 0.001 pascal-seconds (Pa · s) to Pa · s. For example, the viscosity of gel 721a of make-up layer 720a is 0.001 pascal seconds, 5 pascal seconds, 10 pascal seconds, 20 pascal seconds, 30 pascal seconds, 40 pascal seconds, 50 pascal seconds, 60 pascal seconds, 70 pascal seconds, 80 pascal seconds, and the like.

The viscosity of the colloid 721a of the raw rubber layer 720a is in the above range, so that the mask portion 723b can be smoothly formed, and the density of the diamagnetic particles 726a is kept in a range in which the pattern can be etched. Failure in forming the mask portion 723b is avoided, or even if formed, the magnetic particles of the mask portion 723b are not suitably concentrated.

In this embodiment, one of the mask members is opposite to the raw rubber layer 720a of the substrate 700a, specifically, one of the mask members is opposite to the surface of the raw rubber layer 720a away from the base 710a, the other of the mask members is opposite to the base 710a of the substrate 700a, specifically, the other of the mask members is opposite to the surface of the base 710a opposite to the raw rubber layer 720a, the first regions 101 of the two mask members are opposite to each other, and the second regions 102 of the two mask members are opposite to each other, so that both the two mask members can generate repulsive force to the diamagnetic particles 726a, and the repulsive force acts on both the two mask members, and the repulsive force is stronger, so that the diamagnetic particles 726a move from the region corresponding to the first region 101 to the region corresponding to the second region 102 more quickly, so that the mask portion 723b is formed quickly, and the production progress is accelerated.

In fig. 14a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask member 100 is greater than the magnetic field strength of the hollow region 105 (the second region 102), after the diamagnetic particles 726a in the raw rubber layer 720a are subjected to the first repulsive force and the second repulsive force, the diamagnetic particles 726a in the region corresponding to the shielding region 106 on the raw rubber layer 720a move to the region corresponding to the hollow region 105 with a weaker magnetic field, so that the number of the diamagnetic particles 726a in the region corresponding to the shielding region 106 on the raw rubber layer 720a is reduced, thereby forming the spacer regions 724b, and the number of the diamagnetic particles 726a in the region corresponding to the hollow region 105 on the raw rubber layer 720a is increased, thereby forming the mask portions 723b, and further forming the patterned mask layer 725a on the raw rubber layer 720 a.

In fig. 14b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), when the first repulsive force and the second repulsive force act on the diamagnetic particles 726a in the raw rubber layer 720a, the diamagnetic particles 726a in the raw rubber layer 720a corresponding to the protrusion 204 move to the region corresponding to the recess 203 with a weaker magnetic field, so that the number of the diamagnetic particles 726a in the region corresponding to the protrusion 204 of the raw rubber layer 720a is reduced, thereby forming the spacer 724b, and the number of the diamagnetic particles 726a in the region corresponding to the recess 203 of the raw rubber layer 720a is increased, thereby forming the mask portion 723b, and further forming the patterned mask layer 725a in the raw rubber layer 720 a.

Referring to fig. 15a and 15b, fig. 15a and 15b are schematic structural diagrams of a mask member and a substrate in the method for manufacturing the micro-nano layer structure shown in fig. 2. The masking members in fig. 15a and 15b correspond to the masking members in fig. 3a and 3b, respectively. In other embodiments, the mask members of fig. 3 c-3 f may also be used.

Referring to fig. 16a and 16b, fig. 16a and 16b are schematic diagrams illustrating a mask portion formed on a substrate by a magnetic field corresponding to the mask member shown in fig. 15a and 15 b.

In yet another embodiment of the present application, the magnetic particle 722a is a paramagnetic particle 727 a. Step S12 specifically includes: the first region 101 generates an attractive force on the paramagnetic particle 727a, and the attractive force drives the paramagnetic particle 727a to move toward a region corresponding to the first region 101, thereby forming a mask portion 723b corresponding to the first region 101 and forming a spacer 724b corresponding to the second region 102.

The attraction force generated by the first region 101 is referred to as a first attraction force, and the first attraction force drives the paramagnetic particles 727a to shift, so that the original glue layer 720a forms a mask portion 723b and a spacer 724b, so that the original glue layer 720a forms a patterned mask layer 725 a. That is, the magnetic particles 722a are paramagnetic particles 727a, the first magnetic force is a first attractive force, and the mask portion 723b is formed in the region of the prepreg layer 720a corresponding to the first region 101. The mask portion 723b has a constant thickness compared to the original photoresist layer 720a, but the number of the paramagnetic particles 727a is increased, that is, the paramagnetic particles 727a are gathered at the mask portion 723 b.

Although the magnetic field strength of the second region 102 is small, a second magnetic force acting on the paramagnetic particles 727a may be generated, where the second magnetic force is a second attractive force, but the second attractive force is much smaller than the first attractive force, and the second attractive force approaches 0. So that the paramagnetic particles 727a corresponding to the first region 101 can rapidly move to correspond to the first region 101, thereby accelerating the preparation efficiency. The first adsorption capacity is between 5 and 200 times the second adsorption capacity. In the present embodiment, the first adsorption force is 100 times the second adsorption force. In other embodiments, the first sorption capacity is 5 times, 10 times, 20 times, 30 times, 40 times, 70 times, 80 times, 110 times, 200 times, etc., the second sorption capacity.

Step S12 more specifically includes: the substrate 700a is placed under the mask member such that the gel layer 720a is located under the mask member. Then, the mask piece is moved towards the substrate 700a, and when the distance between the mask piece and the substrate 700a is a preset distance, the mask piece is stopped to move; so that the first region 101 generates a first adsorption force on the diamagnetic particles in the virgin rubber layer 720 a; the first attraction drives the inverse magnetic particles to shift, so that a mask portion 723b is formed in a region of the original glue layer 720a corresponding to the first region 101, and the original glue layer 720a forms a patterned mask layer 725 a.

The predetermined distance is determined according to the height of the subsequently formed mask portion 723b, and is set on the basis that the mask portion 723b is not in contact with the mask member. The preset distance may be specifically set by referring to the above embodiments, and details are not repeated.

Because the magnetic particles are the paramagnetic particles 727a, the magnetic field of the mask member generates a first adsorption force on the paramagnetic particles 727a positioned therein. Because the magnetic field strength of the first region 101 of the mask is greater than that of the second region 102, after the paramagnetic particles 727a are subjected to a first adsorption force, the paramagnetic particles 727a in the region corresponding to the second region 102 on the virgin rubber layer 720a move to the region corresponding to the first region 101 with a stronger magnetic field, the number of the paramagnetic particles 727a in the region corresponding to the virgin rubber layer 720a and the second region 102 is reduced, a spacer 724b is formed, the paramagnetic particles 727a in the region corresponding to the virgin rubber layer 720a and the first region 101 are gathered, a mask portion 723b is formed, and the patterned mask layer 725a is formed on the virgin rubber layer 720 a. Paramagnetic particles 727a in the space region 724b are fewer in number and arranged less densely, even without paramagnetic particles 727 a.

The magnetic induction intensity of the mask piece is within the range, so that the mask piece can generate enough adsorption force on magnetic particles, the mask portion 723b can be formed smoothly, and the density of the paramagnetic particles 727a of the mask portion 723b can be kept within the range of forming a proper micro-nano structure after etching. The situation that the density of the inverse magnetic particles 726a at the mask portion 723b is not enough and subsequent etching cannot reach the substrate to cause failure in processing into a micro-nano structure due to improper magnetic induction intensity of the mask piece is avoided; alternatively, the diamagnetic particles 726a may be too dense in the mask portion 723b, which may result in a too deep micro-nano structure for subsequent etching.

The viscosity of the gel 721a of the make-up layer 720a ranges from 0.001 pascal-seconds (Pa · s) to Pa · s. For example, the viscosity of gel 721a of gel layer 720a is 0.001 pascal seconds, 5 pascal seconds, 10 pascal seconds, 20 pascal seconds, 30 pascal seconds, 40 pascal seconds, 50 pascal seconds, 60 pascal seconds, 70 pascal seconds, 80 pascal seconds, and the like.

The viscosity of the colloid 721a of the raw adhesive layer 720a is in the above range, so that the mask portion 723b can be smoothly formed, and the density of the paramagnetic particles 727a is maintained in a range in which the pattern can be etched. Failure in the formation of the mask portion 723b is avoided, or even if formed, the concentration of the magnetic particles of the mask portion 723b is not appropriate.

In fig. 16a, since the magnetic field strength of the shielding region 106 (the first region 101) of the mask 100 is greater than the magnetic field strength of the hollow-out region 105 (the second region 102), after the paramagnetic particles 727a in the raw rubber layer 720a are subjected to the first adsorption force, the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the hollow-out region 105 move to the region corresponding to the shielding region 106 with the stronger magnetic field, so that the number of the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the hollow-out region 105 is reduced, thereby forming the spacing region 724b, and the number of the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the shielding region 106 is increased, thereby forming the mask portion 723b, and further forming the patterned mask layer 725a in the raw rubber layer 720 a.

In fig. 16b, since the magnetic field strength of the protrusion 204 (the first region 101) of the mask member 200 is greater than the magnetic field strength of the recess 203 (the second region 102), after the paramagnetic particles 727a in the raw rubber layer 720a is subjected to the first adsorption force, the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the recess 203 move to the region corresponding to the protrusion 204 with a stronger magnetic field, so that the number of the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the recess 203 is reduced, thereby forming the spacing region 724b, and the number of the paramagnetic particles 727a in the region of the raw rubber layer 720a corresponding to the protrusion 204 is increased, thereby forming the mask portion 723b, and further forming the patterned mask layer 725a in the raw rubber layer 720 a.

Step S13: and etching the substrate by taking the patterned mask layer as a mask so as to form a patterned dielectric layer on the substrate. The method specifically comprises the following steps: and etching the patterned mask layer to enable the mask part to be partially etched, the other parts except the mask part to be completely etched, and the areas of the substrate corresponding to the other parts to be etched, so that the substrate forms a patterned dielectric layer. At this time, a part of the mask portion remains on the substrate 710.

Referring to fig. 17a, fig. 17a is a schematic structural diagram of the patterned mask layer formed in fig. 6a to 6f, fig. 8a to 8b, and fig. 10a to 10f after being etched.

In one embodiment, step S13 specifically includes: substrate 710 is etched using patterned mask layer 725 as a mask, and specifically, patterned mask layer 725 on which protruding portion 723a is formed is entirely etched. Since the patterned mask layer 725 includes the protrusions 723a (mask portions 723) and the recesses (spacers 724), the thickness of the protrusions 723a is greater than the thickness of the recesses (spacers 724). Under the same etching time, the protrusion 723a is etched, the spacer 724 is completely etched (during etching, the thicknesses of the protrusion 723a and the spacer 724 are reduced at the same time), and the protrusion is etched onto the substrate 710, so that the thickness of the portion, corresponding to the protrusion 723a, of the substrate 710 is greater than the thickness of the portion, corresponding to the spacer 724, of the substrate 710, that is, the protrusion and the groove are formed at intervals on the substrate 710, and then the patterned dielectric layer 730 is formed. After the etching is completed, the convex portion 723a is partially etched, and a part of the convex portion 723c remains, and the thickness of the remaining convex portion 723c is smaller than that of the convex portion 723 a. Wherein, the etching adopts dry etching or wet etching.

Referring to fig. 17b, fig. 17b is a schematic structural diagram of the patterned mask layer formed in fig. 12a to 12b, 14a to 14b, and 16a to 16b after being etched.

In another embodiment, step S13 specifically includes: the substrate 710a is etched using the patterned mask layer 725a as a mask, specifically, the entire patterned mask layer 725a where the mask portion 723b is formed is etched. Since the patterned mask layer 725 includes the mask portion 723b (mask portion 723) and the spacers 724b, the concentration of the magnetic particles at the mask portion 723b is greater than that of the spacers 724 b. The mask portion 723b therefore has a hardness greater than that of the spacers 724 b. Under the same etching time, the harder mask portion 723b is partially etched, the softer spacers 724b are completely etched, and the substrate 710 is etched, and then, the thickness of the portion of the substrate 710 corresponding to the mask portion 723b is greater than the thickness of the portion corresponding to the spacers 724b, i.e., the protrusions and the recesses are formed on the substrate 710, and then the patterned dielectric layer 730 is formed. After the etching is completed, the mask portion 723b is partially etched, a part of the mask portion 723d remains, and the remaining mask portion 723d has a smaller thickness than the mask portion 723 b.

Referring to fig. 18, fig. 18 is a schematic diagram illustrating a structure of fig. 17a and 17b in which the remaining mask portion on the patterned dielectric layer is removed.

Step S14: the remaining patterned masking layer on the patterned dielectric layer is removed to form dielectric layer 730. Specifically, the remaining convex portions 723c or the remaining mask portions 723d may be subjected to oxygen plasma bombardment treatment. Dielectric layer 730 may be used as dielectric layer 12 of the electronic device shown in fig. 1. The dielectric layer 730 is a micro-nano layer structure.

According to the manufacturing method of the micro-nano layer structure, in the whole manufacturing process, the mask piece is not in contact with the original glue layer, but the magnetic force is utilized to adsorb or repel the magnetic particles in the original glue layer, so that patterning processing is carried out, the mask piece is not in contact with the original glue layer, the processing cleanliness is high, and the yield is improved. The contactless processing can also be applied for processing of patterns of smaller dimensions, for example patterns below 20 nm. In addition, compared with the existing manufacturing method, the manufacturing method of the embodiment of the application does not need the steps of pre-baking, exposure, development, post-baking and the like, is simple in process, simplifies the manufacturing steps and improves the processing efficiency.

The above embodiments and embodiments of the present application are only examples and embodiments, and the scope of the present application is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present application, and all the changes or substitutions should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A manufacturing method of a micro-nano layer structure comprises the following steps:

providing a mask member, wherein the mask member has magnetic permeability or magnetism, the mask member comprises a first area and a second area which are alternately distributed, and the magnetic field intensity of the first area is larger than that of the second area;

providing a substrate, wherein the substrate comprises a base body and a raw rubber layer arranged on the base body, and the raw rubber layer comprises colloid and magnetic particles doped in the colloid;

the mask piece is opposite to the substrate, a preset distance is reserved between the mask piece and the substrate, and magnetic particles corresponding to the first area are driven to move by the magnetic force of the first area so that the virgin rubber layer forms a patterned mask layer; the patterned mask layer comprises mask portions and spacers which are distributed in a staggered mode, and the concentration of magnetic particles of the mask portions is greater than that of the spacers; and one of the mask portion and the spacer region corresponds to the first region and the other corresponds to the second region;

etching the substrate by taking the patterned mask layer as a mask so as to form a patterned dielectric layer on the substrate;

and removing the residual patterned mask layer on the patterned dielectric layer to form the dielectric layer.

2. The method for manufacturing the micro-nano layer structure according to claim 1, wherein the magnetic particles are diamagnetic particles;

the step of the magnetic force of the first region driving the magnetic particles corresponding to the first region to move comprises: the first region generates repulsive force to the inverse magnetic particles, the repulsive force drives the inverse magnetic particles to move toward a region corresponding to the second region to form the mask portion corresponding to the second region, and the spacer corresponding to the first region.

3. The method for manufacturing the micro-nano layer structure according to claim 1, wherein the magnetic particles are paramagnetic particles;

the step of the magnetic force of the first region driving the magnetic particles corresponding to the first region to move comprises: the first region generates an adsorption force on the paramagnetic particles, and the adsorption force drives the paramagnetic particles to move towards a region corresponding to the first region to form the mask portion corresponding to the first region and form the spacer corresponding to the second region.

4. A method for fabricating a micro-nano layer structure according to any one of claims 1 to 3, wherein the mask portions are protrusions protruding away from the substrate, and the spacers are recesses recessed toward the substrate.

5. The method for manufacturing a micro-nano layer structure according to claim 4, wherein the thickness of the convex part is larger than that of the concave part.

6. The method for manufacturing a micro-nano layer structure according to claim 4, wherein the magnetic induction intensity of the mask member is between 0.1 Tesla and 50 Tesla, and the viscosity of the colloid is between 1 Pascal second and 10000 Pascal seconds.

7. The method for manufacturing a micro-nano layer structure according to claim 4, wherein the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises:

the magnetic force of the first region drives the magnetic particles corresponding to the first region to drive the colloid to move so as to form the convex part.

8. A method for manufacturing a micro-nano layer structure according to any one of claims 1 to 3, wherein the mask part is a magnetic particle aggregation part, and the spacer region is a magnetic particle rarefaction part; the concentration of magnetic particles at the magnetic particle aggregation part is greater than that of the magnetic particle sparse part.

9. The method for manufacturing a micro-nano layer structure according to claim 8, wherein the magnetic induction intensity of the mask member is between 0.01 tesla and 5 tesla, and the viscosity of the colloid is between 0.001 pascal second and 100 pascal second.

10. A method for manufacturing a micro-nano layer structure according to claim 8, wherein the step of driving the magnetic particles corresponding to the first region to move by the magnetic force of the first region comprises,

the magnetic force of the first region drives the magnetic particles corresponding to the first region to move to form the magnetic particle aggregation part.

11. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 10, wherein the first region generates a first magnetic force on the magnetic particles, and the second region generates a second magnetic force on the magnetic particles, wherein the first magnetic force is 5-200 times that of the second magnetic force.

12. The method for manufacturing a micro-nano layer structure according to any one of claims 1 to 11, wherein the number of the mask pieces is two; the magnetic particles are diamagnetic particles;

the step of making the mask member and the substrate oppose each other, wherein the magnetic force of the first region drives the magnetic particles corresponding to the first region to move, comprises: placing the substrate between the two mask members so that the virgin rubber layer is opposite to one of the mask members and the base body is opposite to the other of the mask members; wherein the first repulsive force of the first region of one of the mask members and the second repulsive force of the first region of the other of the mask members drive the inverse magnetic particles corresponding to the first region to move.

13. A method for manufacturing a micro-nano layer structure according to any one of claims 1 to 12, wherein the thickness of the first region is larger than that of the second region, so that the magnetic field strength of the first region is larger than that of the second region.

14. The method for manufacturing the micro-nano layer structure according to any one of claims 1 to 12, wherein the mask member comprises a mask plate and an electromagnetic member which are distributed in a stacked manner, and the mask plate is made of a soft magnet; the first area and the second area are formed on the mask plate, and the thicknesses of the first area and the second area are equal;

the electromagnetic part comprises a plurality of electromagnets, the electromagnets correspond to the first area, and the pattern formed by the electromagnets is the same as the shape of the first area; so that after the mask plate is magnetized by the electromagnetic piece, the magnetic field intensity of the first area is larger than that of the second area.

15. An electronic device, comprising: the dielectric layer and the functional layer are sequentially laminated on the surface of the base layer, and the dielectric layer is manufactured by the manufacturing method of any one of claims 1 to 14.

16. A processing apparatus for a micro-nano layer structure, which is used in the manufacturing method according to any one of claims 1 to 14, the processing apparatus comprising: a mask member; the mask piece has magnetic permeability or magnetism, the mask piece includes first region and second region of staggered distribution, the magnetic field intensity of first region is greater than the magnetic field intensity of second region.

17. A micro-nano layer structure processing device according to claim 16, wherein the thickness of the first region is greater than the thickness of the second region, so that the magnetic field strength of the first region is greater than that of the second region.

18. The machining device for the micro-nano layer structure according to claim 16, wherein the mask member has a first surface and a second surface which are arranged opposite to each other, the mask member includes a plurality of shielding regions and a plurality of hollowed-out regions, the hollowed-out regions penetrate through the first surface and the second surface, the shielding regions and the hollowed-out regions are arranged in a staggered manner, and a pattern formed by the shielding regions is the same as that of the mask portion or a pattern formed by the hollowed-out regions is the same as that of the mask portion.

19. The apparatus for processing a micro-nano layer structure according to claim 17, wherein the mask member comprises a plurality of protrusions and a plurality of recesses, and a region between any two adjacent recesses forms the protrusion; the plurality of projections may be formed in the same pattern as the mask portion, or the plurality of recesses may be formed in the same pattern as the mask portion.

20. The device for processing a micro-nano layer structure according to claim 17, wherein the mask member comprises a first plate and a second plate which are stacked, the second plate has a first surface and a second surface which are opposite to each other, the second plate comprises a plurality of shielding areas and a plurality of hollow-out areas, the hollow-out areas penetrate through the first surface and the second surface, and the shielding areas are formed in an area between any two adjacent hollow-out areas;

the first plate and the second plate are fixedly connected, a plurality of protrusions are formed by the shielding areas and the first plate, and a plurality of concave parts are formed by the hollow areas and the first plate; the plurality of projections may be formed in the same pattern as the mask portion, or the plurality of recesses may be formed in the same pattern as the mask portion.

21. The processing apparatus of the micro-nano layer structure according to any one of claims 17 to 20, wherein the mask member is made of a permanent magnet.

22. The processing device of the micro-nano layer structure according to any one of claims 17 to 20, wherein the mask plate comprises a mask plate and electromagnetic members which are distributed in a stacked manner, and the mask plate is made of a soft magnet; the mask plate comprises a first preparation area and a second preparation area, the first preparation area and the second preparation area have magnetism when the electromagnetic part is electrified to generate magnetism, the first preparation area is the first area, and the second preparation area is the second area.

23. The processing device of the micro-nano layer structure according to claim 22, wherein the electromagnetic member comprises a plurality of electromagnets, the plurality of electromagnets correspond to the first region, and a pattern formed by the plurality of electromagnets is the same as the first region in shape.

24. The machining device of the micro-nano layer structure according to claim 22, wherein the electromagnetic part comprises a first group of electromagnets and a second group of electromagnets, the first group of electromagnets correspond to the first region, and a pattern formed by the first group of electromagnets is the same as the first region in shape; the second group of electromagnets correspond to the second area, and the pattern formed by the second group of electromagnets is the same as the shape of the second area.

25. The device for processing the micro-nano layer structure according to claim 16, wherein the mask plate comprises a mask plate and electromagnetic members which are distributed in a stacked manner, and the mask plate is made of soft magnet; the mask plate comprises a first preparation area and a second preparation area, and the thicknesses of the first preparation area and the second preparation area are the same; when the electromagnetic part is electrified to generate magnetism, the first preparation area and the second preparation area have magnetism, the first preparation area is the first area, and the second preparation area is the second area;

the electromagnetic part comprises a plurality of electromagnets, the electromagnets correspond to the first area, and the pattern formed by the electromagnets is the same as the shape of the first area.