CN113336185A - Method for processing trans-scale micro-nano structure integrated with nano raised array - Google Patents
Method for processing trans-scale micro-nano structure integrated with nano raised array Download PDFInfo
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- CN113336185A CN113336185A CN202110557143.2A CN202110557143A CN113336185A CN 113336185 A CN113336185 A CN 113336185A CN 202110557143 A CN202110557143 A CN 202110557143A CN 113336185 A CN113336185 A CN 113336185A
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 27
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 79
- 239000002105 nanoparticle Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 238000005530 etching Methods 0.000 claims abstract description 40
- 239000000463 material Substances 0.000 claims abstract description 31
- 238000000059 patterning Methods 0.000 claims abstract description 7
- 230000000873 masking effect Effects 0.000 claims description 18
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000003672 processing method Methods 0.000 claims description 10
- 238000001039 wet etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 229920001486 SU-8 photoresist Polymers 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000000017 hydrogel Substances 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000725 suspension Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 3
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000004048 modification Effects 0.000 abstract description 4
- 238000012986 modification Methods 0.000 abstract description 4
- 238000001259 photo etching Methods 0.000 abstract description 3
- 238000010923 batch production Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- SZVJSHCCFOBDDC-UHFFFAOYSA-N ferrosoferric oxide Chemical compound O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 125000003636 chemical group Chemical group 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 238000012271 agricultural production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000007385 chemical modification Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/04—Networks or arrays of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
Abstract
The invention belongs to the technical field of processing, and provides a method for processing a cross-scale micro-nano structure integrated with a nano raised array. Dispersing the nano particles in the photoresist, forming a photoresist layer with the thickness close to the diameter of the nano particles through a photoetching process, removing the photoresist among the nano particles in the photoresist layer on the surface of the functional structure, patterning the photoresist layer, and etching or corroding the surface of the functional structure to form a nano convex structure by taking the nano particles as a mask when or after the substrate material is etched or corroded. According to the invention, complex nano processing technology, nano particle modification technology and other technologies are not required to be carried out, only one photoetching and etching technology is required, and the functional structure with micron or hundreds of nanometers and the protruding structure with the nano characteristic dimension on the surface of the functional structure can be constructed on the substrate at the same time, so that the processing process is simple, the required equipment can be achieved in a common laboratory, the cost for processing the cross-scale micro-nano structure is reduced, and the batch production and manufacturing are facilitated.
Description
Technical Field
The invention belongs to the field of processing, and particularly relates to a method for processing a cross-scale micro-nano structure integrated with a nano raised array and a micro-nano structure manufactured by the method.
Background
With the development of micro-nano processing technology, various sensors such as electrochemical sensors, biomedical sensors, speed sensors and the like are developed towards micro-nano scale, and the micro-nano sensors are widely applied in the fields of environmental protection, clinical medicine, industrial and agricultural production and the like. The functional structure of the micro-nano sensing devices is characterized in that the characteristic dimension of the micro-nano sensing devices is micron or hundreds of nanometers. A large number of nano-scale protruding structures are constructed on the surface of the functional structure of the micro-nano sensing device, so that the surface area of the device can be increased, fixing sites of functional molecules such as antibodies and the like can be increased, and the sensitivity of the sensing device can be improved on the basis of realizing the functions required by the sensor.
The traditional trans-scale micro-nano structure generally adopts the respective manufacturing concept, firstly obtains a functional structure with the micron scale through the conventional processing technologies such as photoetching, etching and the like, and then constructs the nano-scale structure on the surface of the functional structure through the technologies such as chemical modification/physical adsorption of nano particles, femtosecond laser direct writing, nano imprinting and the like. These methods, however, often require complicated fabrication processes after the micron-scale structures are obtained and require expensive equipment to complete the fabrication process.
In view of the above reasons, a method for processing a trans-scale micro-nano structure with simple process and low cost is needed.
Disclosure of Invention
The invention aims to provide a method for processing a trans-scale micro-nano structure integrated with a nano convex array.
The technical scheme of the invention is as follows:
a processing method of a cross-scale micro-nano structure integrated with a nano convex array comprises the following steps:
step S10: dispersing the nano particles in the photoresist to form a suspension;
step S20: preparing a photoresist layer containing nano particles on the surface of a substrate;
step S30: patterning the photoresist layer;
step S40: etching the substrate material; etching the substrate material by wet etching and dry etching;
when the substrate material is etched by adopting wet etching, the photoresist layer is taken as a masking layer, and a micrometer structure is formed by etching; removing the photoresist around the nano particles, and carrying out short-time corrosion again by using the nano particles as a mask to obtain a nano-scale convex structure on the surface of the structure;
when the substrate material is etched by adopting a dry etching method, the substrate material is etched by adopting a one-time dry etching method, the etching speed of the photoresist layer is lower than that of the substrate, the substrate is etched by taking the photoresist layer as a masking layer in the initial etching stage to obtain a micron structure, and after the photoresist layer is completely etched, the nano particles are continuously etched for a short time by taking the nano particles as the masking layer to form a nano-scale convex structure on the surface of the structure;
when the substrate material is continuously etched by taking the nano particles as the masking layer, the etching depth is not more than the particle radius r for an isotropic substrate, and the etching depth is not more than rk for an anisotropic substrate, wherein k is the ratio of the longitudinal etching speed to the transverse etching speed, so that the nano particles serving as the masking layer are prevented from falling off in the etching process;
step S50: and removing the nanoparticles on the surface of the structure.
In step S10, the characteristic dimension of the nanoparticles is in the order of tens to hundreds of nanometers, wherein the material of the nanoparticles is not easily corroded by substrate corrosive liquids such as hydrofluoric acid, chloroauric acid, concentrated potassium hydroxide solution and the like or is not easily corroded by a dry method, the material includes gold, silver, platinum, metal oxide and hydrogel, and the nanoparticles can meet the requirements of the subsequent step S40. The photoresist used is an AZ series photoresist, a BN series photoresist, an SU-8 photoresist or other photoresists known to those skilled in the art. The nanoparticles should be uniformly dispersed in the photoresist, the existence of large agglomerated nanoparticle clusters is avoided as much as possible, and chemical group modification, ultrasonic water bath and other methods known to those skilled in the art are adopted to reduce the agglomeration of nanoparticles in the photoresist.
The substrate material adopted by the invention is silicon, silicon dioxide, metal or metal oxide.
In step S20, the thickness of the photoresist layer containing nanoparticles is required to be close to the characteristic dimension of the nanoparticles, which is in the order of tens to hundreds of nanometers, and a suitable dilution solution is added to the prepared photoresist to obtain the photoresist layer with the characteristic dimension close to the nanoparticles. The photoresist layer is formed by spin-on photoresist, dry film photoresist attach, or other processes known to those skilled in the art.
In step S30, the photoresist layer is patterned by photolithography, laser direct writing or nanoimprinting.
And removing the photoresist around the nano particles by adopting a plasma photoresist removing process. And removing the nano particles on the surface of the structure by adopting methods such as chemical corrosion and the like.
The invention has the beneficial effects that: the invention provides a processing method of a trans-scale micro-nano structure integrated with a nano convex array, which can form a nano convex structure on the surface of the structure by adopting a similar process after a micro-scale structure is formed by patterning, does not need to additionally perform a complex surface roughening process, has a simple processing process, can be realized by required equipment in a common laboratory, and can reduce the cost for processing the trans-scale micro-nano structure.
Drawings
FIG. 1 is a process flow diagram of a cross-scale micro-nano structure processing method integrated with a nano convex array.
Fig. 2 is a schematic process diagram of processing a trans-scale micro-nano structure according to one embodiment of the processing method of the trans-scale micro-nano structure integrated with a nano bump array.
Fig. 3 is a schematic process diagram of processing a trans-scale micro-nano structure according to another embodiment of the processing method of the trans-scale micro-nano structure integrated with a nano bump array.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: the relative arrangement of parts and steps, numerical expressions and numerical values set forth in these specific embodiments do not limit the scope of the present invention unless specifically stated otherwise.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods and apparatus that are known to those of ordinary skill in the relevant art are not described in detail but, where appropriate, are intended to be part of the specification.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not restrictive. Thus, other examples of the exemplary embodiments have different values.
Embodiments and examples of the present invention will be described below with reference to the accompanying drawings.
Fig. 1 is a process flow diagram of an exemplary embodiment of a cross-scale micro-nano structure processing method integrated with a nano projection array according to the present invention.
As shown in fig. 1, in step S10, the nanoparticles are dispersed in the photoresist to form a photoresist with uniformly dispersed nanoparticles.
The characteristic size of the nano-particles adopted by the invention is in the order of dozens to hundreds of nanometers, the materials comprise gold, silver, platinum, metal oxide and hydrogel, and the nano-particles need to meet the requirements of the subsequent step S40 and are not easy to be corroded by substrate corrosive liquids such as hydrofluoric acid, chloroauric acid, concentrated potassium hydroxide solution and the like or dry-method etched.
The photoresist used in the invention is AZ series photoresist, BN series photoresist or SU-8 photoresist, all of which are known to those skilled in the art.
Dispersing the nanoparticles in the photoresist by chemical group modification, ultrasonic water bath, high temperature degaussing, and other methods known to those skilled in the art to reduce nanoparticle agglomeration in the photoresist.
Step S20 is to prepare a photoresist layer containing nanoparticles on the surface of the substrate.
The substrate material used in the present invention is silicon, silicon dioxide, metal oxide or other materials known to those skilled in the art.
The thickness of the photoresist layer containing the nanoparticles required to be prepared in the step S20 is close to the characteristic dimension of the nanoparticles, and is in the order of tens to hundreds of nanometers, and in order to obtain the photoresist layer close to the characteristic dimension of the nanoparticles, a proper dilution solution is added to the prepared photoresist.
The photoresist layer in step S20 is formed by spin-on photoresist, dry film photoresist attach, or other processes known to those skilled in the art.
Step S30 is photoresist layer patterning.
The patterning of the photoresist in the present invention uses photolithography, laser direct writing, nanoimprint, and other processes known to those skilled in the art.
Step S40 is to etch the base material. The method comprises wet etching and dry etching.
When wet etching is adopted to etch the substrate material in step S40, the photoresist is used as a masking layer, and a microstructure is formed by etching; and removing the photoresist around the nano particles, and corroding the nano particles on the surface of the nano structure as a masking layer for a short time again to obtain a nano-scale convex structure on the surface of the structure.
In the wet etching, an appropriate etching solution is selected according to the properties of the substrate material, the nanoparticle material and the photoresist material, and the etching solution is selected from an acidic etching agent, an alkaline etching agent, an organic etching agent or other etching solutions known to those skilled in the art.
The photoresist around the nanoparticles is removed, plasma stripping is used or other processes known to those skilled in the art.
When the substrate material is dry-etched in step S40, the cross-scale micro-nano structure is obtained by one-time dry etching because the photoresist layer is etched at a speed lower than the substrate etching speed. At the beginning of etching, the photoresist layer is used as a masking layer, and the substrate is etched to obtain a micron structure; and after the photoresist layer is etched, continuing etching for a short time by taking the nano particles as a masking layer to form nano protrusions on the surface of the structure.
When the substrate material is continuously etched by taking the nano particles as the masking layer in the step S40, the etching depth is not more than the particle radius r for the isotropic substrate, and the etching depth is not more than rk for the anisotropic substrate, wherein k is the ratio of the longitudinal etching speed to the transverse etching speed, so that the nano particles as the masking layer are prevented from falling off in the etching process;
step S60 is to remove the nanoparticles on the surface of the structure.
The removal of the nanoparticles from the surface of the structure is achieved by chemical etching, and is a process known to those skilled in the art.
Two specific examples of a method for fabricating a trans-scale micro-nano structure integrated with a nano bump array according to the present invention will be described with reference to fig. 2 and 3.
Wherein fig. 2 illustrates a wet etching process in step S40.
In fig. 2(a), the substrate is prepared and cleaned. The cleaning process is performed by selecting ethanol, acetone, deionized water and other means commonly used by those skilled in the art according to the properties of the substrate material.
The substrate is prepared and at the same time a photoresist containing uniform, dispersed nanoparticles is prepared. In this example, a positive photoresist is used, and in other examples, a suitable negative photoresist is selected according to particular requirements.
The selected nanoparticles are required to meet subsequent requirements. For example, the nano ferroferric oxide particles with the diameter of 200nm and the shape of approximate sphere are selected in the example.
In order to ensure that the photoresist layer with the characteristic size similar to that of the nano particles is prepared in the subsequent process, effective technological measures are taken when the photoresist is prepared. For example, ethanol is added as a diluent.
In fig. 2(b), a photoresist film containing nanoparticles is prepared. For example, spin-on resist, baking, and the like, which are well known to those skilled in the art, are used to prepare a photoresist film.
In fig. 2(c) and (d), the photoresist film is patterned, for example, by using a photolithography process for preparing a reticle, which is well known to those skilled in the art.
In fig. 2(e), the substrate material is etched by wet etching to obtain a micron-scale structure.
In FIG. 2(f), the photoresist between the nanoparticles is removed. For example, in this example, a plasma strip process, as known to those skilled in the art, is used to remove the photoresist that does not cover the portions covered by the nanoparticles.
In fig. 2(g), a nano-scale convex structure is formed on the surface of the structure. And forming nano-scale convex structures on the surface of the obtained micro-scale structures by etching or other ways known to those skilled in the art by using the nano-particles as a masking layer.
In fig. 2(h), the nanoparticles on the surface of the structure are removed. For example, the nano ferroferric oxide particles on the surface of the structure are removed by adopting a chemical corrosion mode.
Fig. 3 shows the dry etching process used in step S40.
FIGS. 3(a) - (d) are the same as FIG. 2, preparing a substrate, preparing a nanoparticle dispersed photoresist suspension; preparing a photoresist film containing nanoparticles; and patterning the photoresist film.
FIGS. 3(e) and (f) illustrate the use of dry etching of the substrate material. Fig. 3(e) shows an intermediate state of the dry etching, in which the photoresist is etched at a certain rate with the substrate material being etched, and the nanoparticles are difficult to be etched, and after the photoresist is completely etched, the nanoparticles are used as the masking layer to continue etching for a short time, so as to form the nano-protrusions on the surface of the structure.
FIG. 3(g) removes nanoparticles from the structured surface. For example, removing ferroferric oxide particles on the surface of the structure by adopting a chemical corrosion mode.
According to the structure prepared by the processing method of the cross-scale micro-nano structure integrated with the nano convex array, the effective area of the surface of the structure is increased, a complex surface modification process is not required, the processing process is simple, required equipment can be achieved in a common laboratory, and the cost for processing the cross-scale micro-nano structure can be reduced.
Claims (3)
1. A processing method of a cross-scale micro-nano structure integrated with a nano convex array is characterized by comprising the following steps:
step S10: dispersing the nano particles in the photoresist to form a suspension;
step S20: preparing a photoresist layer containing nano particles on the surface of a substrate;
step S30: patterning the photoresist layer;
step S40: etching the substrate material; etching the substrate material by wet etching and dry etching;
when the substrate material is etched by adopting wet etching, the photoresist layer is taken as a masking layer, and a micrometer structure is formed by etching; removing the photoresist around the nano particles, and carrying out short-time corrosion again by using the nano particles as a mask to obtain a nano-scale convex structure on the surface of the structure;
when the substrate material is etched by adopting a dry etching method, the substrate material is etched by adopting a one-time dry etching method, the etching speed of the photoresist layer is lower than that of the substrate, the substrate is etched by taking the photoresist layer as a masking layer in the initial etching stage to obtain a micron structure, and after the photoresist layer is completely etched, the nano particles are continuously etched for a short time by taking the nano particles as the masking layer to form a nano-scale convex structure on the surface of the structure;
when the substrate material is continuously etched by taking the nano particles as the masking layer, the etching depth is not more than the particle radius r for an isotropic substrate, and the etching depth is not more than rk for an anisotropic substrate, wherein k is the ratio of the longitudinal etching speed to the transverse etching speed, so that the nano particles serving as the masking layer are prevented from falling off in the etching process;
step S50: and removing the nanoparticles on the surface of the structure.
2. The processing method of the trans-scale micro-nano structure integrated with the nano convex array is characterized in that the thickness of the nano particles and the thickness of a photoresist layer containing the nano particles are both in the order of tens to hundreds of nanometers, and the nano particles are uniformly dispersed in the photoresist, wherein the nano particles are made of gold, silver, platinum, metal oxide or hydrogel; the photoresist is AZ series glue, BN series glue or SU-8 glue; the substrate material is silicon, silicon dioxide, metal or metal oxide.
3. The processing method of the trans-scale micro-nano structure integrated with the nano convex array according to the claim 1 or 2, characterized in that the photoresist around the nano particles is removed by adopting a process of removing the photoresist by plasma; the nano particles on the surface of the structure are removed by adopting a chemical corrosion method.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114272965A (en) * | 2021-12-27 | 2022-04-05 | 广东省科学院半导体研究所 | Preparation method of glass substrate chip, glass substrate chip and application |
| WO2023174181A1 (en) * | 2022-03-14 | 2023-09-21 | 华为技术有限公司 | Manufacturing method and processing device for micro-nano layer structure and electronic device |
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