WO2023151234A1 - Procédé de préparation pour un dispositif électronique souple - Google Patents

Procédé de préparation pour un dispositif électronique souple Download PDF

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Publication number
WO2023151234A1
WO2023151234A1 PCT/CN2022/107566 CN2022107566W WO2023151234A1 WO 2023151234 A1 WO2023151234 A1 WO 2023151234A1 CN 2022107566 W CN2022107566 W CN 2022107566W WO 2023151234 A1 WO2023151234 A1 WO 2023151234A1
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WO
WIPO (PCT)
Prior art keywords
layer
electronic device
conductive layer
flexible electronic
encapsulation layer
Prior art date
Application number
PCT/CN2022/107566
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English (en)
Chinese (zh)
Inventor
冯雪
焦阳
王鹏
简巍
马寅佶
Original Assignee
清华大学
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Filing date
Publication date
Application filed by 清华大学 filed Critical 清华大学
Publication of WO2023151234A1 publication Critical patent/WO2023151234A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/08—Means for collapsing antennas or parts thereof
    • H01Q1/085—Flexible aerials; Whip aerials with a resilient base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application belongs to the field of flexible electronic devices, and in particular relates to a preparation method of flexible electronic devices.
  • Flexible electronic devices are extensible and bendable, which greatly expands the application environment of electronic devices. Flexible electronic devices are developing in the direction of high performance and multi-modality, and the integration level is gradually increasing. In order to ensure the reliability of the function of flexible electronic devices, it is necessary to prepare fine wire structures and conduct reasonable packaging. However, the existing photolithography process is more suitable for precision processing of silicon-based materials, metals, etc., and it is difficult to process polymer-based packaging materials. Micro-nano processing technologies such as laser cutting and reactive ion etching are expensive and energy-intensive, and high-precision processing of devices with narrow linewidths is inefficient.
  • the purpose of this application is to propose a method for preparing a flexible electronic device, so that the manufacturing cost of the flexible electronic device is low, and it can be easily mass-produced.
  • the present application proposes a method for preparing a flexible electronic device, including:
  • the encapsulation layer is peeled off due to shear failure, thereby removing a part of the encapsulation layer, so that the encapsulation layer forms the same repeated bending and coiled wire shape as the conductive layer.
  • the thickness of the encapsulation layer is reduced as a whole, so as to increase the stress concentration level and facilitate the peeling of the encapsulation layer due to shear failure.
  • a masking layer is prepared on the encapsulation layer, and according to the structure of the flexible electronic device, part of the masking layer is removed, so that the masking layer forms a Layers have the same or similar shape, and the masking layer is used to protect the conductive layer and the encapsulation layer.
  • the etch depth is measured prior to transfer to said stamp
  • the etching depth is just at the first critical point or between the first critical point and the second critical point, the expected requirement is met;
  • the first critical point is to etch the encapsulation layer until the upper edge of the encapsulation layer is flush with the lower edge of the conductive layer
  • the second critical point is to etch the encapsulation layer to the sacrificial layer in contact with the encapsulation layer.
  • a load is applied to the stress concentration area by pressurized gas.
  • the conductive layer includes a conductive layer main body and an adhesive layer, and the conductive layer main body is attached to the encapsulation layer through the adhesive layer.
  • the conductive layer prefferably, after forming the conductive layer with a predetermined shape, substances and/or structures that affect the resistance change sensitivity of the conductive layer are removed.
  • said encapsulation layer is made of polymer.
  • the encapsulation layer is made of polyimide.
  • the present application can obtain at least one of the following beneficial effects.
  • the packaging material that is difficult to achieve fine processing using the existing technology is processed by peeling off the redundant packaging layer by forming a stress concentration area.
  • the stress concentration area is originally a part of the structure on the packaging layer of the flexible electronic device.
  • the formation of the stress concentration area has low requirements for equipment processing accuracy, and is especially suitable for the processing of narrow line width (linear) flexible electronic devices.
  • FIG. 1 shows a flowchart of a method for fabricating a flexible electronic device according to an embodiment of the present application.
  • Fig. 2 shows a schematic diagram of the steps of the method for manufacturing a flexible electronic device according to an embodiment of the present application.
  • Fig. 3 shows a schematic diagram of applying pressure to a flexible electronic device in step S9 of the manufacturing method according to an embodiment of the present application.
  • Fig. 4 shows a schematic diagram of the scanning of the etching depth reaching the first critical point in step S6 of the manufacturing method of the flexible electronic device according to the embodiment of the present application.
  • Fig. 5 shows a schematic diagram of the scanning of the etching depth reaching the second critical point in step S6 of the manufacturing method of the flexible electronic device according to the embodiment of the present application.
  • FIG. 6 shows a schematic structural view of a flexible electronic device in step S1 of the manufacturing method according to an embodiment of the present application.
  • Fig. 7 shows a schematic structural view of a flexible electronic device in step S2 of the manufacturing method according to an embodiment of the present application.
  • Fig. 8 shows a schematic structural view of a flexible electronic device in step S3 of the manufacturing method according to an embodiment of the present application.
  • FIG. 9 shows a schematic structural view of a flexible electronic device in step S4 of the manufacturing method according to an embodiment of the present application.
  • Fig. 10 shows a schematic structural view of a flexible electronic device in step S5 of the manufacturing method according to an embodiment of the present application.
  • 11A to 11C show schematic structural views of a flexible electronic device in step S6 of the manufacturing method according to an embodiment of the present application.
  • 12A and 12B show a schematic structural view of a flexible electronic device according to an embodiment of the present application in step S7 of the manufacturing method.
  • FIGS. 13A and 13B show a schematic structural view of a flexible electronic device in step S8 of the manufacturing method according to an embodiment of the present application.
  • 14A and 14B show a schematic structural view of a flexible electronic device in step S9 of the manufacturing method according to an embodiment of the present application.
  • 15A and 15B show a schematic structural view of a flexible electronic device in step S10 of the manufacturing method according to an embodiment of the present application.
  • the present application proposes a method for preparing a flexible electronic device, such as a flexible temperature sensor, which includes a conductive layer 1 (made of gold Au and/or chromium Cr for example), a package A layer 2 (made of a polymer, eg PI, ie polyimide) and a base layer 3 (eg made of PLA, ie polylactic acid).
  • a flexible electronic device such as a flexible temperature sensor, which includes a conductive layer 1 (made of gold Au and/or chromium Cr for example), a package A layer 2 (made of a polymer, eg PI, ie polyimide) and a base layer 3 (eg made of PLA, ie polylactic acid).
  • the flexible electronic device may also be a flexible antenna.
  • the conductive layer 1 is connected with electrodes, and the encapsulation layer 2 wraps the front and back sides of the conductive layer 1 and exposes the electrodes.
  • the electrodes enable the conductive layer 1 to be electrically connected to external devices.
  • the function of the encapsulation layer 2 is to prevent the short circuit of the conductive layer 1, and the encapsulation layer can be made of other materials with poor electrical conductivity and good thermal conductivity except polyimide.
  • the electrodes can be extended longer, so as to facilitate the connection of external devices that are far away from the detection site with flexible electronic devices.
  • the conductive layer 1 includes a thermosensitive material, the resistivity of the thermosensitive material can change with temperature, and the temperature measurement can be realized by the resistivity of the conductive layer 1 changing with temperature.
  • the conductive layer 1 includes a thermosensitive material, but the application is not limited thereto, the flexible electronic device may be other types of sensors, and the corresponding conductive layer may also be other conductive materials.
  • the flexible electronic device may be a flexible pressure sensor, and the conductive layer may include a pressure-sensitive material.
  • the conductive layer 1 may include a conductive layer body 11 and an adhesive layer 12, the conductive layer body 11 may include gold (Au), and the adhesive layer 12 may include chromium (Cr).
  • the conductive layer 1 may include other materials other than gold whose resistivity changes under the influence of temperature.
  • the conductive layer 1 may be formed in a bent coil shape to have ductility.
  • the base layer 3 is used to carry the conductive layer 1 and the encapsulation layer 2 , and the base layer 3 may have a curved shape similar to that of the conductive layer 1 and the encapsulation layer 2 , so as to have ductility.
  • the base layer 3 can be made of other materials with good thermal conductivity except polylactic acid, and the base layer 3 can have properties such as degradability, shape memory, and light transmission.
  • the method for fabricating a flexible electronic device is described by taking a flexible temperature sensor as an example, which includes the following steps.
  • S1 Prepare the first encapsulation layer, referring to Figure 1 and Figure 6, prepare the sacrificial layer 4 on the substrate 5, and prepare the encapsulation layer 2 on the sacrificial layer 4, that is to say, the sacrificial layer 4 is sandwiched between the substrate 5 and the encapsulation layer between 2.
  • the substrate 5 can be made of silicon (Si)
  • the sacrificial layer 4 can be made of polymethyl methacrylate (PMMA)
  • the packaging layer 2 can be made of polyimide (PI).
  • the role of the sacrificial layer 4 is to facilitate the peeling of other structures from the substrate 5 in the subsequent transfer step.
  • conductive layer 1 can comprise the conductive layer main body 11 of such as gold (Au) layer and the pasting layer 12 such as chromium (Cr) layer, pasting layer 12 It is helpful to stick the encapsulation layer 2 and the conductive layer main body 11 together.
  • Au gold
  • Cr chromium
  • S3 Structure the conductive layer 1. Referring to FIG. 1 and FIG. 8, structure the conductive layer 1, and form the originally sheet-shaped conductive layer 1 into a predetermined shape by using a method such as photolithography. Photoresist 6 remains on the surface of conductive layer 1 after photolithography.
  • encapsulation layer 2 can select polyimide (PI) for use, like this, Both front and back sides of the conductive layer 1 cover the encapsulation layer 2 .
  • PI polyimide
  • removing the photoresist 6 can avoid the influence of the photoresist 6 on the temperature sensitivity of the resistance of the conductive layer 1. If the step S3 adopts other methods except photolithography to structure the conductive layer 1, the influence should also be eliminated. Substances and/or structures that are sensitive to the change in electrical resistance of the conductive layer 1 with temperature are removed.
  • the masking layer 7 can be selected from copper (Cu), and the masking layer 7 is a masking material for subsequent steps.
  • the masking layer 7 is designed according to the structure of the conductive layer 1 of the flexible electronic device, and the masking layer 7 is used to protect the necessary conductive layer 1 and the encapsulation layer. 2 will not be damaged in subsequent etching steps.
  • the structure of the shielding layer 7 is the same as that of the conductive layer 1, or the shielding layer 7 is slightly shorter than the conductive layer 1, so as to expose the electrodes of the conductive layer 1 and facilitate the connection of the electrodes to external devices.
  • S6 Remove part of the encapsulation layer material to form a stress concentration area.
  • the values of the first critical point and the second critical point are calculated according to the thickness of each layer, and according to the measured values Etching depth, choose to execute the corresponding step.
  • the etched encapsulation layer 2 can be formed into the same predetermined shape as the conductive layer 1, and the etching depth can be measured by scanning the etched surface by means such as a profilometer, an atomic force microscope, etc., to obtain a height profile.
  • FIG. 4 corresponds to the scanning schematic diagram in which the etching depth is the first critical point shown in FIG. 11A
  • FIG. 5 corresponds to the scanning schematic diagram in which the etching depth is the second critical point shown in FIG. 11C .
  • the first critical point is to etch the encapsulation layer until its upper edge is flush with the lower edge of the conductive layer 1 .
  • the second critical point is to etch the encapsulation layer 2 to the sacrificial layer 4 .
  • the product is discarded and no subsequent steps are performed.
  • the stamp 8 can be made of flexible materials, for example, the stamp 8 can be made of polydimethyl Made of silicone (PDMS).
  • PDMS polydimethyl Made of silicone
  • FIG. 12A and FIG. 12B respectively correspond to the form in which the structures shown in FIG. 11A and FIG. 11B in the previous step are transferred to the stamp 8 .
  • S8 Reduce the thickness of the encapsulation layer 2. Referring to FIG. 1, FIG. 13A and FIG. 13B, reduce the thickness of the encapsulation layer 2 (but the encapsulation layer should not be completely removed), so as to increase the stress concentration level and facilitate the execution of step S9.
  • FIG. 13A and FIG. 13B respectively correspond to the morphology of the structure shown in FIG. 12A and FIG. 12B in the previous step after reducing the thickness of the encapsulation layer 2 .
  • Step S9 Peel off the excess encapsulation layer, refer to Figure 3, Figure 1, Figure 14A and Figure 14B, apply a load to the encapsulation layer 2, peel off the excess encapsulation layer from the edge of the stress concentration area, if the stress concentration level is sufficient to peel off the excess encapsulation layer, Step S8 can be skipped, and step S9 is directly executed after step S7.
  • the load on the stress concentration area can be applied by pressurized gas, and the excess packaging layer will be peeled off due to the stress concentration, resulting in shear failure.
  • step S8 can be skipped and the load can be applied directly, and the excess packaging layer can be peeled off from the edge of the stress concentration area.
  • the load can be applied after step S8, and the excess packaging layer can be peeled off from the edge of the stress concentration area. layer.
  • S10 transfer to the base layer, referring to FIG. 1 , FIG. 15A and FIG. 15B , the above structure is transferred to the base layer 3 to obtain a flexible temperature sensor.
  • Fig. 15A is the flexible temperature sensor obtained by skipping step S8.
  • the thickness of the encapsulation layer 2 on the conductive layer 1 side (lower side) is thicker.
  • Fig. 15B is the flexible temperature sensor obtained through step S8.
  • the conductive layer 1 side (lower side) ) encapsulation layer 2 is thinner.
  • the flexible temperature sensor needs to be calibrated before use to determine the corresponding relationship between resistance change and temperature change, specifically, to measure resistance at different temperatures.
  • this patent can also be used for flexible temperature sensors in vitro and flexible temperature sensors for non-human applications.
  • the encapsulation material which is difficult to achieve fine processing by using the existing technology is processed by peeling off the excess encapsulation layer by forming a stress concentration area.
  • the stress concentration area is originally a part of the structure on the packaging layer of the flexible electronic device.
  • the formation of the stress concentration area has low requirements for equipment processing accuracy, and is especially suitable for the processing of narrow line width (linear) flexible electronic devices.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Nonlinear Science (AREA)
  • Structure Of Printed Boards (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

La présente demande concerne un procédé de préparation pour un dispositif électronique souple, consistant : à former une couche conductrice (1) sous une forme prédéterminée, et à former des couches d'encapsulation (2) sur les surfaces avant et arrière de la couche conductrice (1) ; et à graver les couches d'encapsulation (2), de telle sorte qu'une zone de concentration de contrainte est générée sur chaque couche d'encapsulation (2), à transférer conjointement la couche conductrice (1) et les couches d'encapsulation (2) à un joint (8), à appliquer une charge à la zone de concentration de contrainte de chaque couche d'encapsulation (2), de sorte qu'une partie de la couche d'encapsulation (2) fasse l'objet d'une rupture par cisaillement et soit décollée, moyennant quoi une partie de la couche d'encapsulation (2) est éliminée et les couches d'encapsulation (2) peuvent revêtir une forme linéaire courbée et enroulée de façon répétée qui est la même que celle de la couche conductrice (1).
PCT/CN2022/107566 2022-02-11 2022-07-25 Procédé de préparation pour un dispositif électronique souple WO2023151234A1 (fr)

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CN202210127766.0 2022-02-11
CN202210127766.0A CN114520080B (zh) 2022-02-11 2022-02-11 柔性电子器件的制备方法

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CN114520080B (zh) * 2022-02-11 2022-10-04 清华大学 柔性电子器件的制备方法

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