WO2023150972A1 - Ensemble puce et son procédé de fabrication, et procédé de transfert de puce - Google Patents

Ensemble puce et son procédé de fabrication, et procédé de transfert de puce Download PDF

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Publication number
WO2023150972A1
WO2023150972A1 PCT/CN2022/075872 CN2022075872W WO2023150972A1 WO 2023150972 A1 WO2023150972 A1 WO 2023150972A1 CN 2022075872 W CN2022075872 W CN 2022075872W WO 2023150972 A1 WO2023150972 A1 WO 2023150972A1
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WIPO (PCT)
Prior art keywords
substrate
led chip
micro
micro led
chip
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PCT/CN2022/075872
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English (en)
Chinese (zh)
Inventor
戴广超
马非凡
曹进
赵世雄
王子川
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重庆康佳光电技术研究院有限公司
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Priority to PCT/CN2022/075872 priority Critical patent/WO2023150972A1/fr
Publication of WO2023150972A1 publication Critical patent/WO2023150972A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission

Definitions

  • the present application relates to the field of chip transfer, in particular to a chip component, a manufacturing method thereof, and a chip transfer method.
  • Micro LED also known as ⁇ Led refers to a chip with a size smaller than 100 ⁇ m. Like ordinary LEDs, it is also self-illuminating, and LED chips with three luminous colors of RGB are used to form pixels for display. Micro LED has the characteristics of high resolution, low power consumption, high brightness, high contrast, high color saturation, fast response, thin thickness, and long life. Each Micro LED LED is addressable and can be individually driven to light up. Compared with OLED, it saves more power, responds faster, and has higher brightness and saturation.
  • the Micro LED chip needs to be fixed on the native substrate only through anchor points and broken chains.
  • the transfer head will be combined with the Micro LED chip through van der Waals force, and then when the transfer head is separated from the original substrate, the fracture chain needs to be broken so that the Micro LED chip
  • the LED chips are transferred to the transfer head.
  • This structure of "anchor points and broken chains" is the weakened structure of the chip. The quality of the weakened structure determines the quality of the subsequent mass transfer.
  • the purpose of the present application is to provide a chip component and its manufacturing method, and a chip transfer method, aiming to solve the problem of how to provide a weakened structure that facilitates chip transfer.
  • the present application provides a method for manufacturing a chip assembly, comprising:
  • the micro LED chips have a top surface, a bottom surface away from the top surface, and a first side and a second side between the top surface and the bottom surface;
  • the first side and the second side are two opposite sides of the micro LED chip, the bottom surface is close to the first substrate, and electrodes of the micro LED chip are formed on the top surface;
  • a sacrificial layer on the first substrate, the sacrificial layer covering at least one end of the electrode of each micro LED chip away from the top surface, the first side and the second side;
  • the second substrate is close to the first side of each of the micro-LED chips and the first The regions of the two sides have exposed regions exposed to the sacrificial layer;
  • a support body extending toward the bottom surface of each of the micro LED chips is respectively formed, and an end of the support body close to the bottom surface is formed to extend toward the bottom surface and overlap the bottom surface.
  • each micro LED chip is suspended and supported on the second substrate through the support arm and the support body.
  • the manufacturing method of the above-mentioned chip assembly is to form a sacrificial layer covering at least one end of the electrode of each micro-LED chip away from the top surface of the micro-LED chip, the first side and the second side of the micro-LED chip on the first substrate, and then transfer on the second substrate, and the second substrate has an exposed area in the area close to the first side and the second side of each micro-LED chip, and a support body extending to the bottom surface of each micro-LED chip is formed in each exposed area, and from One end of the support close to the bottom surface of the micro-LED chip forms a support arm that extends toward the bottom surface of each micro-LED chip and overlaps the edge area of the bottom surface, and then removes the sacrificial layer so that each micro-LED chip is suspended and supported by the support body and the support arm.
  • the support body and the support arm are formed into a weakened structure, and the manufacturing process is simple and efficient; and in the subsequent chip transfer, because the support arm is made of brittle material, only the bottom surface of the micro LED chip needs to be applied to the second substrate. External force can easily break the support arm, so that the micro-LED chip is separated from the second substrate, which effectively reduces the difficulty of transferring the micro-LED chip, and is very suitable for large-scale industrial applications.
  • the present application also provides a chip transfer method, which includes:
  • the target micro-LED chip picked up by the transfer head is transferred to the circuit substrate.
  • the above chip transfer method can directly select the target micro-LED chip to be transferred from the chip assembly with the weakened structure of the support body and the support arm, and only needs to apply a force toward the second substrate along the bottom surface of the target micro-LED chip during transfer.
  • the target micro-LED chip can be separated from the second substrate, the operation is simple, the transfer efficiency and the yield rate are high, and it is especially suitable for mass transfer of the target micro-LED chip.
  • the present application also provides a chip assembly, including:
  • the micro LED chip has a top surface, away from the top surface
  • the bottom surface and the first side and the second side between the top surface and the bottom surface, the first side and the second side are two opposite sides of the micro LED chip, and the bottom surface is away from
  • the second substrate, the electrode of the micro LED chip is formed on the top surface, and there is a gap between the electrode and the second substrate;
  • the supporting member includes supporting bodies arranged on the second substrate and close to the first side and the second side respectively, and extending from an end of the supporting body close to the bottom surface to the bottom surface and overlapping A support arm attached to an edge region of the bottom surface, the support arm being supported by a brittle material.
  • Each micro-LED chip in the above-mentioned chip assembly is suspended and supported on the second substrate through the weakened structure of the support arm and the support body.
  • the target micro-LED chip to be transferred can be directly selected from the chip assembly. And by applying a force toward the second substrate along the bottom surface of the target micro-LED chip, the target micro-LED chip can be separated from the second substrate, with simple operation, high yield rate and high transfer efficiency.
  • the chip component, its manufacturing method, and the chip transfer method provided by the present application at least one end of the electrode of each micro LED chip away from the top surface of the micro LED chip, the first side of the micro LED chip and the second side of the micro LED chip are formed on the first substrate.
  • the sacrificial layer covered on the side is then transferred to the second substrate, and the second substrate has an exposed area in the area close to the first side and the second side of each micro-LED chip, and forms a connection to each micro-LED chip in each exposed area.
  • the support body extending from the bottom surface, and the support arm extending to the bottom surface of each micro LED chip and overlapping the edge area of the bottom surface formed from the end of the support body close to the bottom surface of the micro LED chip, and then removing the sacrificial layer so that each micro LED chip is supported
  • the body and the support arm are suspended and supported on the second substrate, so that the support body and the support arm form a weakened structure, and the manufacturing process is simple and efficient; and in the subsequent chip transfer, because the support arm is a brittle material, only the micro LED Applying an external force toward the second substrate on the bottom of the chip can easily break the support arm, so that the micro-LED chip is separated from the second substrate, which effectively reduces the difficulty of transferring the micro-LED chip, and is very suitable for large-scale industrial applications.
  • Fig. 1 is a schematic flow chart of the manufacturing method of the chip component provided by the embodiment of the present application
  • Figure 2-1 is a schematic diagram of the distribution of micro LED chips on the first substrate provided by the embodiment of the present application.
  • Figure 2-2 is a schematic diagram of the manufacturing process of the chip component provided by the embodiment of the present application.
  • Figure 2-3 is a first schematic diagram of the distribution of the sacrificial layer on the first substrate provided by the embodiment of the present application;
  • Figures 2-4 are the second schematic diagram of the sacrificial layer distribution on the first substrate provided by the embodiment of the present application;
  • Figures 2-5 are the first schematic diagram of the distribution of the sacrificial layer on the second substrate provided by the embodiment of the present application;
  • Figures 2-6 are the second schematic diagram of the sacrificial layer distribution on the second substrate provided by the embodiment of the present application.
  • 2-7 are the third schematic diagrams of the sacrificial layer distribution on the second substrate provided by the embodiment of the present application.
  • Figure 2-8 is a schematic diagram of the first distribution of the support arms on the second substrate provided by the embodiment of the present application.
  • Figure 2-9 is a second schematic diagram of the distribution of the support arms on the second substrate provided by the embodiment of the present application.
  • Figure 2-10 is the third schematic diagram of the distribution of the support arms on the second substrate provided by the embodiment of the present application.
  • Fig. 2-11 is a schematic diagram 1 after removal of the sacrificial layer on the second substrate provided by the embodiment of the present application;
  • Fig. 2-12 is a second schematic diagram after removal of the sacrificial layer on the second substrate provided by the embodiment of the present application;
  • Fig. 2-13 is a schematic diagram 3 after removal of the sacrificial layer on the second substrate provided by the embodiment of the present application;
  • Figure 3-1 is a second schematic diagram of the manufacturing process of the chip component provided by the embodiment of the present application.
  • Figure 3-2 is the third schematic diagram of the sacrificial layer distribution on the first substrate provided by the embodiment of the present application.
  • Fig. 3-3 is the fourth schematic diagram of sacrificial layer distribution on the first substrate provided by the embodiment of the present application.
  • Figure 3-4 is a schematic diagram of the fifth distribution of the sacrificial layer on the first substrate provided by the embodiment of the present application;
  • FIG. 4 is a third schematic diagram of the manufacturing process of the chip component provided by the embodiment of the present application.
  • Fig. 5 is a schematic diagram 4 of the manufacturing process of the chip component provided by the embodiment of the present application.
  • Fig. 6-1 is a schematic structural diagram of a chip component provided by another embodiment of the present application.
  • Fig. 6-2 is a second structural schematic diagram of a chip component provided by another embodiment of the present application.
  • Fig. 6-3 is a schematic structural diagram III of a chip component provided by another embodiment of the present application.
  • FIG. 7-1 is a schematic flow chart of a chip transfer method provided in another embodiment of the present application.
  • Figure 7-2 is a first schematic diagram of the chip transfer process provided by another embodiment of the present application.
  • Fig. 8-1 is a schematic diagram of the manufacturing process of the micro LED chip provided by another embodiment of the present application.
  • Fig. 8-2 is a schematic diagram of the manufacturing process of the chip component provided by another embodiment of the present application.
  • Figure 8-3 is a second schematic diagram of the chip transfer process provided by another embodiment of the present application.
  • This embodiment provides a method for manufacturing a chip assembly, including:
  • S101 Fabricate several micro LED chips on the first substrate.
  • the manufacturing process of manufacturing the micro LED chip on the first substrate is not limited. Various fabrication methods of micro-LED chips can be used.
  • the micro LED chip in this embodiment is but not limited to Mini
  • the LED chip can also be a Micro LED chip.
  • the micro LED chip in this embodiment can also be replaced with a larger LED chip according to requirements.
  • the micro LED chip fabricated in this embodiment at least includes a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer.
  • the first semiconductor layer may be N-type GaN, P-type GaN, or other GaAs or GaP materials.
  • the second semiconductor layer may be P-type GaN, N-type GaN, or other GaAs or GaP materials.
  • the micro-LED chip in this embodiment can also include a diffusion layer, which can use but not limited to transparent or translucent conductive materials, such as but not limited to indium oxide tin ITO layer.
  • the micro LED chip prepared in this embodiment has a top surface, a bottom surface away from the top surface, and a first side and a second side between the top surface and the bottom surface; wherein the bottom surface of the micro LED chip is close to the first substrate, and the top surface It is far away from the first substrate; the electrodes of micro LED chips are arranged on the top surface.
  • the micro-LED chip in this embodiment can be a flip-chip LED chip.
  • the electrodes provided on the top surface of the micro-LED chip include N electrodes and P electrodes, and the bottom surface of the micro-LED chip is its main light-emitting surface.
  • the micro-LED chip in this embodiment can also be a front-mounted LED chip.
  • the electrodes provided on the top surface of the micro-LED chip also include N electrodes and P electrodes, and the top surface of the micro-LED chip is its main light-emitting surface.
  • the micro LED chip in this embodiment can also be a vertical LED chip.
  • the electrode provided on the top surface of the micro LED chip includes one of the N electrode and the P electrode, and the bottom surface of the micro LED chip is provided with the N electrode and the P electrode.
  • the first side and the second side of the micro LED chip are two opposite sides, and the bottom surface is close to the first substrate.
  • the first substrate in this embodiment may be but not limited to a growth substrate, and the specific material of the growth substrate is not limited, for example, the growth substrate may be but not limited to AlO, SiC, GaAs, Si, AlGaInP and other materials.
  • the growth substrate can be selected as a sapphire substrate, a glass substrate, or a quartz substrate with good epitaxial quality.
  • the growth substrate is the original growth substrate used to prepare micro LED chips. Wherein, the original generation substrate is the substrate on which the micro-LED chips are fabricated or grown, rather than another temporary substrate or temporary base onto which the micro-LED chips have been transferred. That is, micro-LED chips are directly prepared on the growth substrate.
  • the first substrate in this embodiment may also be replaced by a temporary substrate or a temporary base as required. That is to say, in this embodiment, one way of fabricating several micro LED chips on the first substrate may be: now several micro LED chips are fabricated on the growth substrate, and then these micro LED chips are transferred to the first substrate.
  • S102 Form a sacrificial layer on the first substrate, and the formed sacrificial layer covers at least one end of the electrode of each micro LED chip away from the top surface, and the first side and the second side of each micro LED chip.
  • the sacrificial layer in this embodiment can be made of various materials that can be removed later without causing damage to the micro LED chip or affecting the normal operation of the micro LED chip.
  • the thickness and shape of the sacrificial layer in this embodiment can be flexibly set without any limitation.
  • the sacrificial layer can also cover the top surface of each micro LED chip and at least one other than the first side and the second side.
  • the sacrificial layer in this embodiment can be a single-layer or multi-layer structure made of one material, or a multi-layer structure made of different materials.
  • the method of transferring the sacrificial layer and each micro-LED chip to the second substrate may be as follows: aligning the front side of the second substrate with the sacrificial layer on the first substrate, so that the sacrificial layer and the second substrate The front-side combination (the combination can be achieved by but not limited to bonding, bonding, etc.). Then the first substrate is removed.
  • various substrate removal methods may be used for removing the first substrate, such as but not limited to laser lift-off, which is not limited in this embodiment.
  • the areas of the second substrate respectively close to the first side and the second side of each micro-LED chip have exposed areas exposed to the sacrificial layer.
  • the way of forming the exposed area in this embodiment can be flexibly set.
  • no sacrificial layer can be formed at the position corresponding to the exposed area on the second substrate on the first substrate; Covering a location on one substrate corresponding to an exposed area on a second substrate, but removing the sacrificial layer at that location before transferring the sacrificial layer to the second substrate, or removing the sacrificial layer after transferring the sacrificial layer to the second substrate The sacrificial layer is removed at that location.
  • Which method is adopted can be flexibly set, and will not be repeated here.
  • the formation method of the sacrificial layer can also be flexibly set, for example, various methods such as coating and deposition can be used but not limited to, which will not be repeated here.
  • the material of the second substrate for example, but not limited to, a glass substrate, a sapphire substrate, a quartz substrate, etc. may be used.
  • S104 Form a support body extending toward the bottom surface of each micro LED chip on each exposed area of the second substrate, and form an edge area extending toward the bottom surface and overlapping the bottom surface from the end of the support body close to the bottom surface of the micro LED chip
  • the support arm above is made of brittle material.
  • the support body formed on the second substrate extends along a direction perpendicular to the second substrate and toward the bottom surface of the micro LED chip (but it should be understood that the support body may be perpendicular to the second substrate, or can be perpendicular to the second substrate).
  • the support arm in this embodiment extends laterally from the end of the support body away from the second substrate (that is, close to the bottom surface of the micro LED chip) toward the bottom surface of the micro LED chip, and overlaps the edge area of the bottom surface of the micro LED chip.
  • the overlapping in this embodiment means that the support arm is in direct contact with the bottom surface of the micro-LED chip and is bonded, so that the micro-LED chip can be suspended and supported on the second substrate through the overlapping.
  • the support arm overlaps the edge area of the bottom edge of the micro-LED chip. On the one hand, it can meet the stability support requirements of the micro-LED chip. Ease of transfer and efficiency.
  • At least support bodies and support arms are formed on both sides of the opposite first side and second side of the micro-LED chip to support the micro-LED chip.
  • the bottom surface of the LED chip is respectively supported in areas close to the first side and the second side, so that the supporting force of the micro LED chip is more uniform and symmetrical.
  • the support body and the support arm are only formed on one side of the first side and the second side of the micro LED chip, the micro LED chip can also be supported stably, and the support body and the support arm can also be formed only on one side.
  • the support arm further simplifies the fabrication of the weakened structure, reduces cost and reduces efficiency.
  • the support body and the support arm are also formed on at least one side of the remaining micro-LED chip, As long as the stable support of the micro-LED chip and the transfer of subsequent chips can be met, this embodiment does not limit it.
  • each micro-LED chip after removing the sacrificial layer on the end of the electrode of each micro-LED chip away from the top surface of the micro-LED chip, there is a gap between each micro-LED chip and the second substrate, so that each micro-LED chip is supported The body and the support arms are suspended and supported on the second substrate. After the sacrificial layer covering the first side and the second side of each micro-LED chip is removed, there will be a gap between the first side and the second side of each micro-LED chip and the support body, so that when the chip is transferred subsequently , it only needs to break the support arm under force, which is convenient for subsequent chip picking, and improves the efficiency and yield rate of chip picking.
  • the method of removing the sacrificial layer can be removed by wet method or dry method or other methods according to the specific material of the sacrificial layer. No more details here.
  • the chip fabricated on the first substrate is a micro LED chip
  • the chip assembly in this embodiment is not limited to the micro LED chip, and some embodiments also It can be applied to other micro-semiconductor devices (that is, other micro-semiconductor devices can be used to replace micro-LED chips), such as but not limited to diodes, transistors, and lasers.
  • forming a sacrificial layer covering at least one end, the first side, and the second side of the electrodes of each micro-LED chip away from the top surface may include: forming a top surface of each micro-LED chip, electrodes away from the top One end of the surface, the first side and the second side, and the sacrificial layer covered by the first substrate between adjacent micro-LED chips; after transferring the sacrificial layer and each micro-LED chip to the second substrate, it also includes: At least a part of the sacrificial layer between adjacent micro LED chips on the second substrate is removed, so that the areas of the second substrate close to the first side and the second side of each micro LED chip are exposed to the sacrificial layer to form an exposed area .
  • An exemplary production process is shown in Figure 2-2, which includes but is not limited to:
  • the micro LED chip 2 has a top surface T and a bottom surface D, and an electrode 20 is formed on the top surface D.
  • the micro LED chip 2 has a first side S1 and a second side S2 opposite to each other. It also has opposite third side S3 and fourth side S4.
  • several micro LED chips 2 prepared on the first substrate 1 are distributed in an array, and there are gaps between adjacent micro LED chips 2 . It should be understood that the distribution of the micro-LED chips 2 on the first substrate 1 is not limited to the array distribution, and may also be staggered or random distribution between adjacent rows or columns, etc., which will not be repeated here.
  • S202 Form a sacrificial layer 3 on the first substrate 1, and the formed sacrificial layer 3 covers at least one end of the electrode 20 of each micro LED chip 2 away from the top surface, and the first side and the second side of each micro LED chip 1.
  • FIGS. S1 and the second side S2 as well as the area of the first substrate 1 located between adjacent micro LED chips 2 (Fig. The third side S3 and the fourth side S4 of the micro LED chip 2 .
  • the main difference compared with Fig. 2-3 is that the sacrificial layer 3 also covers the third side S3 and the fourth side S4 of each micro LED chip 1 , and cover all the areas of the first substrate 1 located between adjacent micro LED chips 2 .
  • the area of the first substrate 1 close to the first side S1 and the second side S2 of the micro LED chip 2 is covered by the sacrificial layer 3; A part of the sacrificial layer 3 is removed for subsequent formation of an exposed area of the second substrate. In this example, removal may occur after subsequent transfer to a second substrate.
  • the sacrificial layer 3 can also be set not to cover this part of the area, thereby omitting the step of removing the sacrificial layer of this part of the area after subsequent transfer to the second substrate, Improve production efficiency.
  • a bonding layer combined with the sacrificial layer 3 can be provided on the front side of the second substrate 4 (the material of the bonding layer can be based on the material of the sacrificial layer 3 and the specific bonding method with the sacrificial layer 3 (such as adhesion or bonding, etc.) Flexible setting, for example, but not limited to, adhesive layer, metal layer, etc.), and then the side of the second substrate 4 provided with the bonding layer is face-to-face with the side of the first substrate 1 provided with the sacrificial layer 3, so that the sacrificial layer Layer 3 is bonded to the bonding layer on the second substrate 4 .
  • the method of removing the first substrate 1 may be adopted, but not limited to, such as laser lift-off, which will not be repeated here.
  • S205 Remove at least a part of the sacrificial layer 3 between adjacent micro LED chips 2 on the second substrate 4, so that the second substrate 4 is close to the first side and the second side of each micro LED chip 2 respectively It is exposed on the sacrificial layer 3 to form an exposed area.
  • an application scenario is shown in Fig. 2-5, which corresponds to the sacrificial layer 3 shown in Fig. 2-3. At least a part of the sacrificial layer 3 between adjacent micro LED chips 2 on the second substrate 4 is removed to form a channel A, and the second substrate 4 is exposed to the sacrificial layer 3 through the channel A to form an exposed area.
  • FIGS. 2-6 which corresponds to the sacrificial layer 3 shown in FIGS. 2-4
  • the At least a portion of the removal forms channel A.
  • FIGS. 2-7 its main difference compared with FIGS. Areas close to the third side and the fourth side of each micro LED chip 2 are exposed to the sacrificial layer 3 to form an exposed area.
  • step S205 can be omitted.
  • each exposed area of the second substrate 4 respectively form a support body 51 extending toward the bottom surface of each micro-LED chip 2, and form an end of the support body 51 close to the bottom surface of the micro-LED chip 2 to extend toward the bottom surface and overlap A support arm 52 on the edge region of the bottom surface, wherein the support arm is a brittle material.
  • the support body 51 and the support arm 52 may be made of the same material, and the two may be integrally formed. In other application scenarios, the support body 51 and the support arm 52 may also be made of different materials. However, the support arm 52 in this embodiment needs to be made of brittle material.
  • the support arm 52 can be made of metal or inorganic silicon (such as but not limited to silicon dioxide, silicon oxide, silicon nitride, etc.).
  • the support arm 52 in this example extends laterally from the end of the support body 51 away from the second substrate 4 ) toward the bottom surface of the micro LED chip 2 , and overlaps the edge area of the bottom surface of the micro LED chip 2 .
  • Support bodies and support arms 52 are formed on both sides of the second side to support the areas of the bottom surface of the micro LED chip 2 close to the first side and the second side respectively, so that the supporting force of the micro LED chip 2 is more uniform and symmetrical.
  • the main difference between FIG. 2-8 and FIG. 2-9 is that the width W of the support arm 52 in FIG. 2-8 (see FIG.
  • the width of the support arm 52 in FIGS. 2-9 is smaller than the width of the micro LED chip 2 . It can be seen from this that the width of the support arm 52 in this embodiment can be flexibly set as long as it can meet the support strength requirement of the micro LED chip 2 . Compared with the support arm 52 shown in FIGS. 2-8 , the support arm 52 shown in FIGS. 2-9 can use less material and reduce costs.
  • corresponding support bodies 51 can also be provided on each side of the micro LED chip 2 And the supporting arm 52, which can further improve the stability of supporting the micro LED chip 2.
  • each micro LED chip 2 is suspended and supported on the second substrate 4 through the support arm 52 and the support body 51 .
  • the support arm 52 For example, as shown in FIG. 2-2 , after the sacrificial layer 3 is removed, there are gaps between the electrodes and the top surface of the micro LED chip 2 and the second substrate 4 to form a suspension. And there is a gap between the side surfaces of the micro LED chip 2 (for example, the first side and the second side) and the corresponding support body 51, so that in the subsequent chip transfer process, only the support arm 52 needs to be broken to replace the micro LED chip. Chip 2 is separated from second substrate 4 .
  • FIG. 2-11 is a schematic diagram after the sacrificial layer 3 in FIG. 2-8 is removed.
  • FIG. 2-12 is a schematic diagram after the sacrificial layer 3 in FIG. 2-9 is removed.
  • FIG. 2-13 is a schematic diagram after the sacrificial layer 3 in FIG. 2-10 is removed.
  • forming a sacrificial layer covering at least one end, the first side, and the second side of the electrodes of each micro LED chip away from the top surface may include: forming the top surface of each micro LED chip, and the electrodes away from the top surface One end of the surface, the first side and the second side, and the sacrificial layer covered by the first substrate between adjacent micro-LED chips; before transferring the sacrificial layer and each micro-LED chip to the second substrate, it also includes: At least a part of the sacrificial layer between adjacent micro LED chips on a substrate is removed, so that at least a part of the area of the first substrate close to the first side and the second side of each micro LED chip is exposed to the sacrificial layer.
  • An example production process is shown in Figure 3-1, which includes but is not limited to:
  • S301 Fabricate several micro LED chips 2 on the first substrate 1 .
  • S302 Form a sacrificial layer 3 on the first substrate 1, and the formed sacrificial layer 3 covers at least one end of the electrode 20 of each micro LED chip 2 away from the top surface, and the first side and the second side of each micro LED chip 1.
  • the formed sacrificial layer 3 covers at least one end of the electrode 20 of each micro LED chip 2 away from the top surface, and the first side and the second side of each micro LED chip 1.
  • S303 Remove at least a part of the sacrificial layer 3 between adjacent micro LED chips 2 on the first substrate 1, so that the first substrate 1 is close to the first side and the second side of each micro LED chip 2 respectively At least a portion of is exposed on the sacrificial layer.
  • FIG. 3-2 corresponds to the sacrificial layer 3 shown in FIG. 2-3 .
  • At least a part of the sacrificial layer 3 located between adjacent micro LED chips 2 on the first substrate 1 is removed to form a channel A, and the pair of first substrates 1 are exposed to the sacrificial layer 3 through the channel A.
  • Fig. 3-3 which corresponds to the sacrificial layer 3 shown in Fig. 2-4
  • the At least a portion of the removal forms channel A.
  • FIGS. 3-4 the main difference compared with FIGS. 2-6 is that a part of the sacrificial layer 3 between adjacent rows of micro LED chips 2 is removed, so that the first substrate 1 Areas close to the third side and the fourth side of each micro LED chip 2 are exposed to the sacrificial layer 3 .
  • step S303 can be omitted.
  • S304 Transfer the sacrificial layer 3 and each micro LED chip 2 onto the second substrate 4 .
  • each exposed area of the second substrate 4 respectively form a support body 51 extending toward the bottom surface of each micro-LED chip 2, and form an end of the support body 51 close to the bottom surface of the micro-LED chip 2 to extend to the bottom surface and overlap Support arms 52 on the edge region of the bottom surface.
  • Support arms 52 On each exposed area of the second substrate 4, respectively form a support body 51 extending toward the bottom surface of each micro-LED chip 2, and form an end of the support body 51 close to the bottom surface of the micro-LED chip 2 to extend to the bottom surface and overlap Support arms 52 on the edge region of the bottom surface.
  • S307 The sacrificial layer 3 is removed, and each micro LED chip 2 is suspended and supported on the second substrate 4 through the support arm 52 and the support body 51 .
  • each micro LED chip 2 is suspended and supported on the second substrate 4 through the support arm 52 and the support body 51 .
  • the support body 51 and the support arm 52 located at the edge of the second substrate 4 form an L shape, and the end of the support arm 52 extending from the support body 51 overlaps the on the bottom surface of the micro LED chip 2 .
  • the support body 51 and the support arm 52 located between the adjacent micro-LED chips 2 on the second substrate 4 form an inverted T shape, and the two ends of the support arm 52 extending from the support body 51 are respectively lapped on the adjacent micro-LED chips 2. bottom surface.
  • the shape formed by the support body 51 and the support arm 52 located between adjacent micro LED chips 2 on the second substrate 4 in this embodiment may also be L-shaped.
  • the shape of the support body 51 and the support arm 52 in this embodiment can be flexibly set, as long as it can support the micro LED chip 2 in the above example and facilitate the picking up of the subsequent micro LED chip 2 .
  • FIG. 4 the manufacturing process of another chip component is shown in FIG. 4, which includes:
  • S401 Fabricate several micro LED chips 2 on the first substrate 1 .
  • S402 Form a sacrificial layer 3 on the first substrate 1, and the formed sacrificial layer 3 covers at least one end of the electrode 20 of each micro LED chip 2 away from the top surface, and the first side and the second side of each micro LED chip 1.
  • the main difference between S402 in this example and the aforementioned S202 and S302 is that the sacrificial layer 3 completely fills the area between adjacent micro LED chips 2 , which will not be repeated here.
  • S403 Remove at least a part of the sacrificial layer 3 located between adjacent micro LED chips 2 on the first substrate 1, so as to provide areas of the first substrate 1 close to the first side and the second side of each micro LED chip 2 respectively At least a portion of is exposed on the sacrificial layer.
  • the main difference between S403 in this example and the above S303 is that a channel A is formed in the regions close to the first side and the second side of the adjacent micro LED chip 2 respectively. And it should be understood that, in other application scenarios, the channel A may also be formed after being transferred onto the second substrate 4 .
  • each exposed area of the second substrate 4 respectively form a support body 51 extending toward the bottom surface of each micro-LED chip 2, and form an end of the support body 51 close to the bottom surface of the micro-LED chip 2 to extend toward the bottom surface and overlap Support arms 52 on the edge region of the bottom surface.
  • the main difference between this example and the above S206 and S306 is that the shape formed by the support body 51 and the support arm 52 located between adjacent micro LED chips 2 on the second substrate 4 can also be L-shaped.
  • the sacrificial layer may include a protective adhesive layer that can be removed by the first removal solution;
  • the sacrificial layer covering the two sides includes: forming a protective glue layer covering at least one end of the electrode of each micro LED chip away from the top surface, the first side and the second side.
  • the sacrificial layer may only include a protective adhesive layer.
  • the sacrificial layer may also include an inorganic silicon layer that can be removed by the second removal solution, and the protective adhesive layer will not be corroded by the second removal solution; at least the electrode of each micro LED chip is formed away from the top surface.
  • the protective adhesive layer covering one end, the first side and the second side it also includes: forming an inorganic silicon layer to cover the protective adhesive layer.
  • the inorganic silicon layer in this example includes at least one of a silicon oxide layer (such as but not limited to silicon dioxide, silicon oxynitride) and a silicon nitride layer. Covering the protective adhesive layer with an inorganic silicon layer is more convenient for the subsequent removal of the sacrificial layer and can better prevent the sacrificial layer from remaining on the second substrate or the micro-LED chip after removal.
  • both the support body and the support arm can be made of metal; on each exposed area of the second substrate, a support body extending toward the bottom surface of each micro LED chip is formed, and a support body close to the bottom surface of the support body is formed.
  • Forming a support arm extending toward the bottom surface at one end and overlapping the edge area of the bottom surface includes: separately depositing (for example, by but not limited to evaporation) on each exposed area of the second substrate and extending to the bottom surface of each micro LED chip
  • the first metal layer is used as a support body, and the second metal layer is deposited from the end of the first metal layer close to the bottom surface and extends to the bottom surface and overlaps the edge area of the bottom surface as a support arm.
  • the first metal layer extending toward the bottom surface of each micro-LED chip can be deposited on each exposed area of the second substrate as a support body, and deposited from the end of the first metal layer close to the bottom surface to the bottom surface.
  • the second metal layer which extends and overlaps the edge region of the base, acts as a support arm.
  • the area of the second substrate close to each side of each micro-LED chip has an exposed area exposed to the sacrificial layer, and each exposed area of the second substrate (that is, on each side of each micro-LED chip) respectively
  • a first metal layer extending toward the bottom of each micro LED chip is deposited as a support body, and a second metal layer extending toward the bottom and overlapping the edge region of the bottom is deposited from an end of the first metal layer near the bottom as a support arm.
  • the sacrificial layer includes a protective glue layer and an inorganic silicon layer, and the support body and the support arm are both made of metal as an example to illustrate a manufacturing process of the chip component, as shown in Figure 5. It includes but is not limited to:
  • S501 Fabricate a number of micro LED chips 2 on the first substrate 1, and form a protective adhesive layer 31 on the first substrate 1.
  • the protective adhesive layer 31 at least separates the electrodes 20 of each micro LED chip 2 from the top surface, and each micro LED chip 2 The first side and the second side of the LED chip 1 are covered.
  • S505 Remove at least a part of the inorganic silicon layer 32 and the protective adhesive layer 31 located between adjacent micro LED chips 2 on the second substrate 4, so that the second substrate 4 is respectively close to the first side of each micro LED chip 2 The area on the second side and the second side are exposed to the inorganic silicon layer 32 and the protective glue layer 31 to form an exposed area.
  • each exposed area of the second substrate 4 respectively deposit a first metal layer extending toward the bottom surface of each micro LED chip 2 to form a support body 51, and deposit the first metal layer from the end of the support body 51 close to the bottom surface of the micro LED chip 2 toward the bottom surface of each micro LED chip 2.
  • the bottom surface extends and overlaps the second metal layer on the edge region of the bottom surface to form support arms 52 .
  • the second removal solution may use, but not limited to, hydrofluoric acid to etch away the silicon oxide.
  • each micro LED chip 2 is suspended and supported on the second substrate 4 through the support arm 52 and the support body 51 .
  • the first removal solution may use, but is not limited to, various glue removers, and the adhesive material protection layer 31 is washed away by the glue remover.
  • the support body 51 and support arm 52 prepared in this way are formed into a weakened structure, and the manufacturing process is simple and efficient; and in the subsequent chip transfer, since the support arm 52 is a brittle material, it only needs to be applied on the bottom surface of the micro LED chip 2 toward the second The external force of the substrate 4 can easily break the supporting arm, so that the micro-LED chip 2 is detached from the second substrate 4, which effectively reduces the difficulty of transferring the micro-LED chip, and is very suitable for large-scale industrial applications.
  • This embodiment provides a chip assembly, which includes: a second substrate, a support member disposed on the second substrate, and a micro LED chip suspended and supported on the second substrate by the support member; the micro LED chip has a top surface, The bottom surface away from the top surface and the first side and the second side between the top surface and the bottom surface, the first side and the second side are two opposite sides of the micro LED chip, the bottom surface of the micro LED chip is far away from the second substrate, the top Electrodes of micro-LED chips are formed on the surface, and there is a gap between the electrodes of the micro-LED chips and the second substrate, that is, the micro-LED chips are suspended above the second substrate.
  • the supporting member in this embodiment includes a supporting body arranged on the second substrate and close to the first side and the second side of the micro-LED chip respectively, and extending from the end of the supporting body close to the bottom surface of the micro-LED chip to the bottom surface and overlapping A support arm on the edge region of the base, the support arm being supported by a brittle material.
  • the support body and the support arm are formed as a weakened structure to support and fix the micro-LED chip.
  • the support arm is made of brittle material, it is only necessary to apply an external force on the bottom surface of the micro-LED chip toward the second substrate to easily make the support arm break, so that the micro-LED chip is separated from the second substrate, which effectively reduces the difficulty of transferring the micro-LED chip, and is very suitable for large-scale industrial application.
  • this embodiment will be described below with several structural examples of chip components.
  • the chip assembly shown in FIG. 6-1 which includes: a second substrate 4, a support provided on the second substrate, and a micro LED chip 2 suspended and supported on the second substrate 4 by the support;
  • An electrode 20 is formed on the top surface of the micro LED chip 2 , and there is a gap between the electrode 20 of the micro LED chip 2 and the second substrate 4 , that is, the micro LED chip 2 is suspended above the second substrate 4 .
  • the support includes a support 51 disposed on the second substrate 4 and close to the first side and the second side of the micro-LED chip 2, and extends from the end of the support 51 close to the bottom of the micro-LED chip 2 to the bottom surface and overlaps the bottom surface of the micro-LED chip 2.
  • a support arm 52 adjoins the edge region of the base, the support arm 52 being supported by a brittle material.
  • the first gap C1 and the second gap C2 Through the setting of the first gap C1 and the second gap C2, only the bottom surface of each micro-LED chip 2 is overlapped on the support arm 52, and the other areas are in a suspended state, so that when the micro-LED chip 2 is subsequently transferred, only need Applying an external force towards the second substrate 4 on the bottom surface of the micro LED chip 2 can easily break the supporting arm, so that the micro LED chip 2 is detached from the second substrate 4 .
  • the support body 51 and the support arm 52 of the support located at the edge of the second substrate 4 form an L shape, and the end of the support arm 52 extending from the support body overlaps the micro LED on the underside of chip 2.
  • the support body 51 and the support arm 52 of the support member located between adjacent micro-LED chips 2 on the second substrate 4 form an inverted T shape, and the two ends of the support arm 52 extending from the support body 52 are respectively lapped on the adjacent micro-LED chips. the bottom surface of the chip.
  • the two support arms 52 respectively overlapping the bottom surfaces of the adjacent micro LED chips 2 can share a support body 51, which not only simplifies the structure and manufacturing process, but also reduces the material cost.
  • the support body 51 and the support arm 52 of the support between the adjacent micro LED chips 2 on the second substrate 4 also form an inverted L shape, as shown in FIG. 6-2 for example.
  • at least one of the above-mentioned first gap C1 and second gap C2 may not be provided.
  • the first side and/or the second side of the micro LED chip 2 It can be in direct contact with the supporting pillars 51 close to it; in this case, the supporting pillars 51 can also be set as brittle materials, and when the chip is transferred, it can directly apply pressure to the supporting pillars 51 to make them break, and it is also possible to complete the micro Transfer of LED chips 2.
  • the sacrificial layer does not cover the first side and the second side of the micro LED chip.
  • the micro-LED chip 2 in this embodiment can be a front-mounted LED chip or a flip-chip LED chip (for example, as shown in Figure 6-1 and Figure 6-2, where the micro-LED chip 2 is a flip-chip, The bottom surface is the main light-emitting surface, and when the chip is being mounted, the top surface (that is, the side with electrodes) is the main light-emitting surface).
  • the micro LED chip 2 in this embodiment can also be a vertical LED chip, as shown in FIG. 6-3 for example, and its electrodes 20 are respectively arranged on the top surface and the bottom surface of the micro LED chip 2 .
  • chip components shown in Fig. 6-1 to Fig. 6-3 in this embodiment are manufactured by but not limited to the manufacturing method of the chip component shown in the above embodiment, and other methods that can obtain Fig. 6-1 can also be used. The manufacturing methods of the chip components shown in FIG. 6-3 will not be repeated here.
  • this embodiment provides a chip transfer method, which includes:
  • S702 Attach the transfer head to the target micro LED chip to be picked up among the micro LED chips on the second substrate, and apply a force toward the second substrate, so that the support arm overlapping the target micro LED chip breaks, to complete Pick-up of target micro LED chips.
  • the transfer head in this embodiment can be a transfer head capable of picking up micro-LED chips. transfer head.
  • the circuit substrate in this embodiment may include, but is not limited to, various display backplanes, lighting circuit boards, and the like. The details can be flexibly selected according to the application scenario.
  • FIG. 6-1 the chip assembly shown in Figure 6-1 is taken as an example below to describe a chip transfer process, as shown in Figure 7-2, which includes but is not limited to:
  • S801 Use the transfer head 61 to attach the target micro LED chip to be picked up in the micro LED chip 2 on the second substrate 4, and apply a force F toward the second substrate 4, so that the support on the target micro LED chip
  • the arm 52 is broken (see the broken position indicated by S in FIG. 7-2 ), so as to finish picking up the target micro LED chip.
  • a part of the support arm 52 overlapping the bottom surface of the micro LED chip 2 may remain on the micro LED chip 2, because it only overlaps the bottom surface of the micro LED chip 2. Therefore, there is basically no impact on the normal operation and light extraction efficiency of the micro LED chip 2 .
  • a step of removing the support arm 52 remaining on the target micro-LED chip may also be included. The specific removal method can be flexibly set according to the specific material of the support arm 52, and will not be repeated here.
  • S803 Complete the bonding of the target micro-LED chip to the corresponding pad 71 on the circuit substrate 7 .
  • the bonding of the two can be done by, but not limited to, conductive glue or solder.
  • the specific thicknesses of the sacrificial layer, the support arm and the support body can be flexibly set according to specific application scenarios.
  • the manufacturing process, the manufacturing process of the chip assembly including the micro-LED chip, and the subsequent chip transfer process are described as examples.
  • Figure 8-1 The manufacturing process of a specific micro-LED chip is shown in Figure 8-1, which includes but is not limited to:
  • the epitaxial wafer includes the following layers: a first semiconductor layer 21 (such as an N-GaN layer), an active layer 22 (such as MQW), a second semiconductor layer 23 (such as P-GaN).
  • a first semiconductor layer 21 such as an N-GaN layer
  • an active layer 22 such as MQW
  • a second semiconductor layer 23 such as P-GaN.
  • a mesa pattern is photolithographically etched on the epitaxial wafer, and the above epitaxial wafer is etched by a dry method, for example, the etching gas may be BCl 3 Cl 2 , and the mesa layer (N-GaN layer) can be obtained after the glue is removed.
  • S902 Lithographically etch the ISO pattern on the mesa layer, use a dry etching machine to etch through GaN to the substrate layer, where the etching gas can be BCl3 Cl2, the etching depth can be but not limited to 4 um -8um, after deglue
  • the ISO pattern is obtained, that is, the epitaxial layers of the separated micro-LED chips are obtained.
  • S903 Sputter a whole layer of ITO on the epitaxial layer of each micro-LED chip.
  • the thickness of the whole ITO layer can be 200 A -2000 A. Lithographically etch the ITO pattern on the whole ITO layer, after wet etching the ITO to remove the glue The ITO layer 24 on the epitaxial layer of each micro LED chip is obtained.
  • DBR distributed Bragg Reflection, distributed Bragg reflector
  • the DBR layer 25 can be formed by evaporating silicon oxide and silicon nitride stack
  • the thickness of the layer can be but not limited to 1 um -4um.
  • the DBR pattern is photolithographically etched on the entire DBR layer. Use a dry etching machine to dry etch the DBR layer. It should be noted that this step needs to etch through the DBR layer.
  • the gas can be but not limited to CF 4 O 2 Ar, and the DBR layer 25 of each micro-LED chip is obtained after the adhesive is removed.
  • S905 Use a negative photoresist photolithography electrode (that is, PAD) pattern on the DBR layer, for example, use a Fulin evaporation machine to evaporate the electrode, the thickness of the electrode can be but not limited to 1um -4um, and the blue film is peeled off. Then the electrode 20 is obtained.
  • a negative photoresist photolithography electrode that is, PAD
  • Fulin evaporation machine to evaporate the electrode
  • the thickness of the electrode can be but not limited to 1um -4um
  • the blue film is peeled off. Then the electrode 20 is obtained.
  • the negative photoresist used in this example can be the following components: resin: phenolic resin (small molecular weight, fast dissolution rate); photosensitive component: photoacid generator (generating acid in broad-spectrum, G/line exposure ); cross-linking agent: small molecular compound containing multifunctional groups, such as epichlorohydrin, glutaraldehyde, N,N-methylenebisacrylamide, etc.; solvent: PGMEA, EL. It should be understood that in some examples, a positive photoresist may also be used instead of a negative photoresist, which will not be repeated here.
  • FIG. 8-2 An example of making a chip assembly based on the micro-LED chip made in Figure 8-1 is shown in Figure 8-2, which includes but is not limited to:
  • S906 Coating a protective adhesive layer 31 on the first substrate 1, the protective adhesive layer 31 is not corroded by hydrofluoric acid, its thickness may be but not limited to 1um to 10um, and it at least keeps the electrodes 20 of each micro LED chip 2 away from One end of the top surface, the first side and the second side of each micro LED chip 1 are covered.
  • S907 forming an inorganic silicon layer 32 on the protective glue layer 31 .
  • a layer of silicon oxide is deposited on the protective glue layer 31, and the silicon oxide covers the entire protective layer, and the thickness may be but not limited to 2000 ⁇ -40000 ⁇ .
  • S908 Transfer the inorganic silicon layer 32, the protective glue layer 31 and each micro-LED chip 2 onto the second substrate 4; for example, a metal layer may be deposited on the second substrate 4 for bonding with the inorganic silicon layer 32 .
  • S909 Remove the first substrate 1.
  • the first substrate 1 is peeled off by laser lift-off.
  • the specific operation process can adopt the laser lift-off method commonly used in this field.
  • the thermal decomposition of the nitride graft layer between the chips 2 realizes the peeling off of the first substrate 1 .
  • S910 Remove at least a part of the inorganic silicon layer 32 and the protective glue layer 31 located between adjacent micro LED chips 2 on the second substrate 4, so that the second substrate 4 is close to the first side of each micro LED chip 2
  • the area on the second side and the second side are exposed to the inorganic silicon layer 32 and the protective glue layer 31 to form an exposed area.
  • a layer of uniform photoresist can be provided, and the pattern is exposed, and the inorganic silicon layer 32 and the protective adhesive layer at the junction of each micro-LED chip 2 are etched to form a channel A, so that the second substrate 4 is at least close to the micro-LED chip 2 respectively.
  • the areas of the first side and the second side have exposed areas exposed to the inorganic silicon layer 32 and the protective adhesive layer 31 .
  • each micro LED chip 2 is suspended and supported on the second substrate 4 through the support arm 52 and the support body 51 .
  • FIG. 8-3 for the process of chip transfer based on the chip assembly produced in Figure 8-2, which includes but is not limited to:
  • S914-S915 Attach the target micro LED chip to be picked up in the micro LED chip 2 on the second substrate 4 through the transfer head 61, and apply a force F toward the second substrate 4, so that it overlaps the target micro LED chip
  • the support arm 52 is broken (see the broken position indicated by S in Fig. 8-3).
  • the manufacturing method of the above-mentioned weakened structure and the chip transfer method of this embodiment can effectively reduce the difficulty of micro-device transfer, ensure the yield rate, and be more conducive to the popularization and use of micro-LED chips.
  • This embodiment also provides a display screen, including a frame and a display panel; the display panel is fixed on the frame; the display panel includes a display backplane, and several micro LED chips arranged on the display backplane, wherein the several micro LED chips Transfer to the display backplane by the chip transfer method in the above embodiment.
  • This embodiment also provides a spliced display screen, including that the spliced display screen can be formed by splicing at least two display screens as shown above.
  • the display screen and spliced display screen can be applied to, but not limited to, various intelligent mobile terminals, vehicle-mounted terminals, PCs, monitors, electronic billboards, and the like.

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Abstract

La présente demande concerne un ensemble puce et son procédé de fabrication, et un procédé de transfert de puce. Chaque puce à micro-DEL dans un ensemble puce fabriqué est supportée de manière suspendue sur un second substrat au moyen d'un bras de support et d'un corps de support, qui sont au moins situés sur une première face latérale et une seconde face latérale opposées l'une à l'autre et qui sont reliées par recouvrement à un bord d'une face inférieure de la puce à micro-DEL ; et lorsque la puce est transférée, le bras de support peut être rompu par simple application d'une force au second substrat à partir de la face inférieure de la puce à micro-DEL.
PCT/CN2022/075872 2022-02-10 2022-02-10 Ensemble puce et son procédé de fabrication, et procédé de transfert de puce WO2023150972A1 (fr)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN212461685U (zh) * 2020-09-14 2021-02-02 厦门乾照半导体科技有限公司 可测试及微转移的微元件及显示装置
CN112864287A (zh) * 2021-01-11 2021-05-28 深圳市华星光电半导体显示技术有限公司 转移方法、微型器件阵列及其制备方法
CN113284826A (zh) * 2021-06-18 2021-08-20 厦门乾照半导体科技有限公司 可巨量转移的微元件及其制作和转移方法、显示装置
WO2021247545A1 (fr) * 2020-06-02 2021-12-09 The Regents Of The University Of California Dispositif d'affichage flexible à micro del inorganiques et son procédé de fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021247545A1 (fr) * 2020-06-02 2021-12-09 The Regents Of The University Of California Dispositif d'affichage flexible à micro del inorganiques et son procédé de fabrication
CN212461685U (zh) * 2020-09-14 2021-02-02 厦门乾照半导体科技有限公司 可测试及微转移的微元件及显示装置
CN112864287A (zh) * 2021-01-11 2021-05-28 深圳市华星光电半导体显示技术有限公司 转移方法、微型器件阵列及其制备方法
CN113284826A (zh) * 2021-06-18 2021-08-20 厦门乾照半导体科技有限公司 可巨量转移的微元件及其制作和转移方法、显示装置

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