WO2023144799A1 - Procédé de production de nanocristaux de chalcohalides métalliques - Google Patents

Procédé de production de nanocristaux de chalcohalides métalliques Download PDF

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WO2023144799A1
WO2023144799A1 PCT/IB2023/050820 IB2023050820W WO2023144799A1 WO 2023144799 A1 WO2023144799 A1 WO 2023144799A1 IB 2023050820 W IB2023050820 W IB 2023050820W WO 2023144799 A1 WO2023144799 A1 WO 2023144799A1
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chosen
metal
nanocrystals
chalcogen
acid
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PCT/IB2023/050820
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English (en)
Inventor
Carlo GIANSANTE
Danila QUARTA
Stefano TOSO
Roberto GIANNUZZI
Rocco CALIANDRO
Anna MOLITERNI
Cinzia GIANNINI
Liberato Manna
Giuseppe Gigli
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Consiglio Nazionale Delle Ricerche
Fondazione Istituto Italiano Di Tecnologia
Universita Del Salento
Universita Cattolica Del Sacro Cuore
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Publication of WO2023144799A1 publication Critical patent/WO2023144799A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G29/00—Compounds of bismuth
    • C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G30/00—Compounds of antimony
    • C01G30/002—Compounds containing, besides antimony, two or more other elements, with the exception of oxygen or hydrogen
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/84—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by UV- or VIS- data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

Definitions

  • This invention refers to a process for the production of nanocrystals of metal chalcohalides, having the chemical formula M n EpXq, where M is a metal, E is a chalcogen and X is a halogen.
  • This invention also refers to nanocrystals of metal chalcohalides, produced through such a process and to uses of such nanocrystals in the electrochemical field.
  • Photoactive materials are becoming more and more important, especially since photovoltaic panels and similar structures have become of paramount importance. The production of such materials is often rather complicated and results in many pitfalls.
  • the photoactive material should be coated or otherwise applied onto a carrier or base substrate. This application is by far not trivial to perform and can result in defects appearing on the surface, especially due to an inherent roughness of the coated material, what leads to bad performance or even to at least partial ineffectiveness of the photoactive material.
  • Another problem is to find photoactive materials which can be synthesised in a simple way, exhibiting good chemical, physical and mechanical properties at a reasonable cost and with no harm.
  • a number of inorganic materials have been tested for this purpose.
  • lead halide perovskites AMX 3
  • lead is toxic and a lot of effort has been performed since many years to reduce or even to eliminate it -for instance as it happened with tetraethyl-lead in petrol- as widely as possible, so as to avoid health problems.
  • bismuth Since the beginning of this process of substitution, bismuth has appeared as the most suitable replacement. Bismuth replaced lead, for instance, in soldering electronic components, in producing tips for pencils without graphite, in cosmetics, in medical chemistry and in many other uses. Bismuth is the heaviest element being simultaneously non toxic and non radioactive. Moreover, bismuth is relatively abundant on Earth.
  • bismuth oxides can be investigated. However, although they are very stable, their wide band gap prevents the absorption of a significant portion of the solar light, as reported by S. Ho-Kimura et al, J. Mater. Chem., A 2014, 2, 3948.
  • Another class of bismuth compounds is the group of chalcogenides, like Bi 2 S 3 and AgBiS 2 , see for example L. Cademartiri et al., Angew. Chem Int. Ed., 2008, 47, 3814 and M. Bernachea et al., Nature Photonics, 2016, 10, 521.
  • Another kind of compounds can be seen in double perovskites, like Cs 2 AgBiBr 6 , see for example E. Greul et al., J. Mater. Chem. A, 2017, 5, 19972. All of these materials exhibit a narrow band gap.
  • WO2016/161 392 discloses an optoelectronic device, comprising an absorber layer, comprising a composition including a partially oxidised cation, containing a lone 6s 2 or 5s 2 pair of electrons and a halide anion or chalcogenide anion or a combination thereof.
  • a number of chalcohalides is within the scope of this prior art document.
  • such materials are synthesised as regularly sized crystals which are applied onto a substrate through well-known technique, like depositing a solution and evaporating the solvent or via sublimation.
  • the result is a relatively wide creation of surface defects, which results in a poor efficacy.
  • Photoactive materials can also be used for manufacturing photoelectrodes, which can be employed in photoelectrochemical devices.
  • An exemplary photoelectrochemical device which has a wide range of applications, is a photoelectrochemical cell, useful as solar battery or for the artificial photosynthesis.
  • Problem of the invention is to propose a process for the synthesis of nanocrystals of metal chalcohalides, having the chemical formula M n E p X q , where M is a metal, E is a chalcogen and X is a halogen which overcomes the above drawbacks and which allow to get metal chalcohalides useful for applying them onto a suitable substrate in a uniform and smooth way.
  • this invention relates to Nanocrystals of metal chalcohalides, having the chemical formula M n E p X q , where M is a metal, E is a chalcogen and X is a halogen, characterised in that M is chosen between Bi and Sb, E is chosen between S and Se and X is chosen among Cl, Br and I..
  • this invention refers to the use of the nanocrystals of metal chalcohalides, having the chemical formula M n E p X q or M n M' n' E p X q , where M (and possibly M') is a metal, E is a chalcogen and X is a halogen, for the production of a photoelectrode active all over the range of the visible light, characterised in that M is chosen between Bi and Sb, if present, M' is chosen among alkaline metals and group IB metals, E is chosen between S and Se and X is chosen among Cl, Br and I.
  • fig. 1 is a phase diagram of the M-E-X system, where M is Bi, E is S and X is Br;
  • figs. 2A-2F are TEM images of phase pure colloidal nanocrystals and respectively refer: fig. 2A to BiSCl, fig. 2B to BiSBr, fig. 2C to BiSI, fig. 2D to Bi 13 S 18 Br 2 , fig. 2E to Bi 13 S 18 I 2 ; and fig. 2F to BiSeBr; fig.
  • 3A is a Vis-NIR spectrum of some compounds according to this invention
  • fig. 3B is a Vis-NIR spectrum of some other materials, according to the prior art (from B, J. Phys. Chem. Lett. 2014, 5, 6, 1035-1039)
  • fig. 4A shows incident photon-to-current conversion efficiency related to an electrode, produced according to this invention
  • fig. 4B shows incident photon-to-current conversion efficiency related to two electrodes produced according to the prior art (from B, J. Mater. Chem. A, 2014, 2, 3948-3953)
  • fig. 5 shows the photocurrent density trend over the time related to an electrode produced according to this invention.
  • this invention refers to a process for the synthesis of nanocrystals of metal chalcohalides, starting from a precursor of M.
  • M is a metal chosen in the group consisting of Bi and Sb.
  • E represents a chalcogen and, according to a preferred embodiment of the invention, is chosen between S and Se.
  • X is a halogen, and is chosen among Cl, Br and I.
  • M can encompass also a second metal, M', so that the actual formula becomes M n M' n' E p X q .
  • a precursor of the metal M preferably a carboxylic salt
  • a surfactant in a solvent, having a boiling temperature higher than 180 °C, preferably higher than 190 °C, higher than 195 °C, higher than 200 °C, higher than 205 °C, higher than 210 °C or higher than 215 °C.
  • the solvent can be chosen within the group consisting of: dodecane, tetradecane, hexadecane, octadecane, 1-dodecene, 1-hexadecene, 1-octadecene. Any kind of surfactant can be suitable for the process of this invention.
  • Anionic, cationic, zwitterionic and non-ionic surfactants can be suitable. Among them, a preference is within the group consisting of: quaternary ammonium salts, ammonium lauryl sulphate, undecenoic acid, lauric acid, myristic acid, palmitic acid, stearic acid, linoleic acid, tetradecylphosphonic acid, octadecylphosphonic acid, docusate, perfluoroctanesulphonate, sodium oleate, oleic acid, sodium linoleate, sodium linolenate, cocamidopropyl betaine, phosphatidylserine.
  • metal precursors there is no limitation as for metal precursors. Particularly suitable are metal salts, which are widely available.
  • metal salts can be halides, like chlorides, bromides, iodides; nitrates; nitrites; carbonates; carboxylates.
  • carboxylates low molecular weight carboxylates are preferred, like formates, acetates, propionates, butyrates and pentanoates are preferred, which can be easily removed.
  • the mixture obtained in the first step is heated, in order to get a clear solution. Heating ranges between 90 °C and the solvent boiling point, preferably between 100 and 170 °C, more preferably between 100 and 150 °C.
  • the solution is cooled down preferably between 70 and 120 °C, more preferably between 80 and 90 °C, and then subjected to repeated cycles of vacuum application and purging with an inert gas.
  • the inert atmosphere is kept through the use of the usual inert gases, like nitrogen, helium, carbon dioxide or argon. This treatment can be repeated more than once, in order to deareate the solution and to remove the eventual water and acids which form upon dissolution of the bismuth precursor.
  • the temperature is then raised up between 150 and 210 °C, typically at 180 °C.
  • the next step is the addition of chalcogen and halogen precursors.
  • the addition takes place through a direct injection, by using a conventional syringe or any other suitable tool, which is per se well known.
  • chalcogen precursors there is no particular limitation. Any inorganic or organic sulfide is virtually suitable. Organic sulfides are particularly suitable; among organic sulfides, silicon based sulfides are preferred, particularly preferred is bis(trimethylsilyl)sulfide.
  • As halide precursors there is no particular limit. Inorganic and organic halides can be used.
  • acyl and aryl halides are particularly suitable, especially low acyl halides, the excess of which can be easily removed. Examples are acetyl, propionyl, butyroyl or benzoyl halides.
  • organic halides silicon based halides are also preferred, trimethylsilylhalides being the most preferred.
  • the final quenching of the product solution can be reached through any technique, which is at the reach of the skilled person. Therefore, ice baths, liquid nitrogen, natural cooling down are all admissible, according to the circumstances.
  • nanocrystals obtained through the above process having the general formula M n E p X q , where M is a metal, E is a chalcogen and X is a halide, are provided. Pure orthorombic or hexagonal nanocrystals can generally be obtained.
  • M is Bi or Sb; E is S or Se; and X is Cl, Br or I.
  • Examples of compounds according to this invention have the following formulae: BiSBr, Bi 13 S 18 Br 2 , BiSeBr, BiSeI, BiSCl, BiSI, Bi 13 S 18 I 2 ..
  • a completely unknown BiSCl polymorph can be synthesised.
  • M encompasses also M', the latter is chosen among an alkaline metal and a group IB metal.
  • M' is preferably Cs, Cu or Ag.
  • nanocrystalline compounds are colloidally stable and can withstand at least up to 250 °C, so that they are particularly useful for the preparation of inks, which can be used for their application by coating them, in a way per se known, onto a substrate.
  • pastes and composites can be obtained.
  • the compounds obtained through the process according to this invention are photoactive substances, which can be used for applications in this field, combining these features with the capability to be spread as an ink. This can result in the possibility of creating robust, thin films, with reduced roughness and no lacks on the surface under room conditions, thus resulting in smooth surfaces.
  • photoelectrodes can have application in photochemistry.
  • one of the preferred ones is for the artificial photosynthesis and another on for solar fuels, particularly including H 2 .
  • the amenability to both surface chemistry modification and thermal annealing of the metal chalcohalides enabled the nanocrystal processing into stable, insoluble solids that can be deposited on various substrates (such as bare glasses, conductive glasses, stainless steel, and silicon wafers).
  • Such solids were fabricated by a three step method comprising: i) the spin casting of the nanocrystals previously exchanged in the solution phase with ligands, such as the corresponding halide salt of a quaternary ammonium cation; ii) the solid phase exchange of the ligands, such as the corresponding methylammonium halide salt, then followed by rinsing with a polar solvent, such as dimethylformamide; iii) the thermal annealing at 180 °C. All the steps can be repeated up to eight times to fill cracks and voids due to the displacement of the bulky ligands and to the eventual close packing of the nanocrystals induced by the annealing process.
  • This layer-by- layer process can be conducted at standard laboratory conditions, without control on either the ambient temperature or humidity.
  • This example refers to the preparation of BiSBr.
  • the ligand exchange reactions were carried out by adding aliquots of 100 mM solutions of the replacing ligands, in either toluene or dimethylformamide, up to one ligand per Bi atom; the dispersion was centrifuged, the supernatant discarded, and the resulting nanocrystal pellet redispersed in the solvent used for the replacing ligand.
  • Solid films of the nanocrystals were deposited onto substrates (glass, silicon wafer, transparent conductive oxides, stainless steel) by spin casting toluene dispersions of the nanocrystals coordinated by quaternary ammonium halide salts ligands; the as- casted nanocrystals were further ligand exchanged with ammonium halide in dimethylformamide, then the nanocrystal solid was rinsed with dimethylformamide; the deposition cycle can be repeated up to eight times; an annealing step at 180 °C can be applied.
  • 1,l-dimethyl-2-selenourea was used as Se precursor; since it is barely soluble in 1-octadecene, it was used in a heterogeneous mixture with benzoylbromide, to synthesise BiSeBr nanocrystals.
  • Benzoylchloride was used to synthesise BiSCl nanocrystals; we note that the lower reactivity of benzoylchloride compared to benzoylbromide required the use of 0.5 mmol, to obtain BiSCl nanocrystals from 0.3 mmol of Bi-carboxylates (compared to the 0.3 mmol of benzoylbromide for BiSBr nanocrystal synthesis).
  • Benzoyliodide was used in the synthesis of BiSI and Bi 13 S 18 I 2 nanocrystals; it was obtained by reacting benzoylchloride with an excess (1.5 equivalents) of sodium iodide at 80 °C for five hours.
  • the higher reactivity of benzoyliodide compared to benzoylbromide required the use of 0.15 mmol, to obtain BiSI from 0.3 mmol of Bi-carboxylates (whereas 0.05 mmol were used to obtain Bi 13 S 18 I 2 nanocrystals, compared to the 0.15 mmol of benzoylbromide for the synthesis of Bi 13 S 18 Br 2 nanocrystals).
  • a phase diagram of the MEX system is shown in fig. 1. It shows the M n E p X q compounds which can at least theoretically be obtained through the process according to this invention.
  • the shown system includes Bi, S and Br, but diagrams with other M, E and X components are possible.
  • Figs 2A-2F show TEM micrographs. Transmission electron microscopy were used to get information about the morphology of these nanocrystals. TEM images were recorded with a Jeol Jem 1011 microscope, operated at an accelerating voltage of 100 kV. Samples for analysis were prepared by dropping from a dispersion of nanocrystals onto carbon-coated Cu grids and then allowing the solvent to evaporate in a vapour controlled environment. Longitudinal and lateral sizes were determined by the statistical analysis of TEM images of several hundreds of nanocrystals with the Image] software.
  • fig. 2A refers to BiSCl, fig. 2B to BiSBr, fig. 2C to BiSI, fig. 2D to Bi 13 S 18 Br 2 fig. 2E to Bi 13 S 18 I 2 and fig. 2F to BiSeBr.
  • Figs. 3A and 3B show a comparison between the compounds obtained through the process according to this invention (fig. 3A) and some photoactive systems of the state of the art (fig. 3B).
  • the comparison shows that the effect of absorbing electromagnetic radiations by the inventive systems (fig. 3A), like visible light, is still higher at the visible spectral range than with the well known systems (fig. 3B), so that the inventive compounds are more versatile, exhibiting a high light absorption coefficient.
  • Figs. 4A and 4B show a comparison of the incident photon to current conversion energy for the inventive systems (fig. 4A) and for some prior art compounds (fig. 4B).
  • the comparison shows a very wide range of high harvest of light with respect to prior art systems, which show in turn a much lower performance.
  • the inventive systems allow to produce current for a wider range of wavelength, therefore taking advantage of more conditions of light and being more independent of the particular environmental conditions.
  • Fig. 5 shows the photocurrent density over the time in the inventive systems. Under solar simulated illumination, a photocurrent density of the order of the mA/cm 2 at a 0.25 V bias could be extracted for several minutes, with a good reproducibility between different nanocrystalline solids.
  • This invention allows to get semiconductor nanomaterials, starting from metals with reduced toxicity, with relatively wide availability and with limited market prices. Even materials which were per se already been disclosed, have been obtained in a colloidal form, which is completely new and not at the immediate reach of the skilled person, through the process according to this invention. A new manufacturing way has been therefore made available for photoelectrochemical cells and new horizons open for solar batteries and for artificial photosynthetic processes.

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

L'invention concerne un procédé de synthèse de nanocristaux de chalcohalides métalliques, M étant un métal, E étant un chalcogène et X étant un halogène, à partir d'un sel de M. Le procédé comprend les étapes suivantes : a) un précurseur de métal M est mélangé avec un tensioactif dans un solvant ayant un point d'ébullition supérieur à 180°C ; b) le mélange obtenu à l'étape a) précédente est chauffé, afin de dissoudre les composants, jusqu'à ce qu'il devienne clair ; c) la solution est chauffée sous atmosphère inerte à la température souhaitée ; d) des précurseurs de chalcogène et d'halogène dans 0 un solvant ayant un point d'ébullition supérieur à 180°C sont ajoutés par injection, tout en chauffant la solution obtenue dans les étapes a) à c) ; e) une fois que le temps de réaction s'est écoulé, le produit est trempé jusqu'à température ambiante.
PCT/IB2023/050820 2022-01-31 2023-01-31 Procédé de production de nanocristaux de chalcohalides métalliques WO2023144799A1 (fr)

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Citations (3)

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US20090295005A1 (en) * 2006-11-21 2009-12-03 Bayer Technology Services Gmbh Process for the synthesis of nanosize metal-containing nanoparticles and nanoparticle dispersions
WO2016161392A1 (fr) 2015-04-01 2016-10-06 Massachusetts Institute Of Technology Dispositifs optoélectroniques fabriqués avec des semi-conducteurs tolérants aux défauts
KR102231108B1 (ko) * 2019-11-27 2021-03-23 재단법인대구경북과학기술원 비스무트 칼코할라이드 박막의 제조방법 및 이를 포함하는 태양전지의 제조방법

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