WO2023140389A1 - Alliage pour appareils de production de semi-conducteurs, élément en alliage pour appareils de production de semi-conducteurs, et produit - Google Patents

Alliage pour appareils de production de semi-conducteurs, élément en alliage pour appareils de production de semi-conducteurs, et produit Download PDF

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WO2023140389A1
WO2023140389A1 PCT/JP2023/002127 JP2023002127W WO2023140389A1 WO 2023140389 A1 WO2023140389 A1 WO 2023140389A1 JP 2023002127 W JP2023002127 W JP 2023002127W WO 2023140389 A1 WO2023140389 A1 WO 2023140389A1
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alloy
element group
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semiconductor manufacturing
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PCT/JP2023/002127
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English (en)
Japanese (ja)
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富生 岩崎
潤樹 菅原
寛 大沼
秀峰 小関
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日立金属株式会社
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C30/00—Alloys containing less than 50% by weight of each constituent

Definitions

  • the present invention relates to alloys for semiconductor manufacturing equipment used in chambers and the like of semiconductor manufacturing equipment, alloy members for semiconductor manufacturing equipment, and products using the same.
  • a semiconductor chip is obtained by dividing a semiconductor wafer into individual chips through a dicing process after thinning a semiconductor wafer to a predetermined thickness in a back grinding process, an etching process, or the like. At this time, in the semiconductor wafer, the process of laminating each layer in the chamber, the process of partially removing the layers by etching, and the like are repeated.
  • a reactive gas is used in such a lamination process and etching process.
  • reactive gases containing chlorine and bromine may be used.
  • Such reactive gas affects not only the semiconductor wafer but also the inner surface of the chamber, etc., and may corrode the inner surface of the chamber.
  • Patent Document 1 In order to suppress such corrosion in semiconductor manufacturing equipment, a method has been proposed in which the surfaces of various parts in the chamber are coated with ceramics such as Al 2 O 3 , AlN, and TiN (for example, Patent Document 1).
  • An object of the present invention is to provide an alloy for semiconductor manufacturing equipment, an alloy member for semiconductor manufacturing equipment, and a product using the same, which can be suitably used in semiconductor manufacturing equipment.
  • Non-Patent Documents 1 to 6 disclose technical documents necessary for supplementary explanation of the embodiments of the present invention.
  • Non-Patent Document 1 describes a method of simulating the process of atomic motion based on the fundamental equations of quantum mechanics, that is, the calculation principle of the first-principles molecular dynamics method. The electrons and nuclei that make up the atoms in a material obey the laws of quantum mechanics, so this simulation can be used to assess the properties of the material.
  • Non-Patent Document 2 mentions a method of calculating the diffusion coefficient by molecular dynamics simulation.
  • Non-Patent Document 3 refers to a method of calculating adsorption energy by molecular dynamics simulation.
  • Other Non-Patent Documents 4 to 6 will be referred to in the section of the mode for carrying out the invention which will be described later.
  • a first invention for achieving the above-mentioned object is an alloy for semiconductor manufacturing equipment, which contains Ta and Mo as the first element group, at least one selected from the group of Nb, Hf, Zr, Ti and W as the second element group, and inevitable impurity elements, Ta is 10 at% or more and 35 at% or less, Mo is 5 at% or more and 25 at% or less, and each element of the second element group is 10 at% or more and 35 at% or less. , the sum of the first element group, the second element group and the unavoidable element is 100 at %, and the adsorption energy for Cl ions and Br radicals is 0.2 eV or less.
  • each element of the second element may be 10 at% or more and 25 at% or less, and the sum of the first element, the second element, the third element, and the inevitable element may be 100 at%.
  • the adsorption energy to chloride ions and bromine radicals is low, and the diffusion coefficient of chloride ions and bromine radicals is small, so the reactivity to chloride ions and bromine radicals is low, and corrosion resistance can be obtained when used in semiconductor manufacturing equipment.
  • a second invention is an alloy member for a semiconductor manufacturing apparatus, comprising Ta and Mo as the first element group, at least one selected from the group consisting of Nb, Hf, Zr, and W as the second element group, and an unavoidable impurity element, wherein Ta is 10 at% or more and 35 at% or less and Mo is 5 at% or more and 25 at% or less, each element of the second element group is 10 at% or more and 35 at% or less, and the first element group, the An alloy member for semiconductor manufacturing equipment, characterized in that the sum of the second element group and unavoidable elements is 100 at %, and at least a part of the alloy has an adsorption energy of 0.2 eV or less for Cl ions and Br radicals.
  • the alloy may further contain at least one selected from the group of Au, Pt, and Ag as a third element group, each element of the third element group being 10 at% or more and 25 at% or less, and the sum of the first element group, the second element group, the third element group, and unavoidable elements may be 100 at%.
  • the second invention since the adsorption energy with chloride ions and bromine radicals is low, reactivity with chloride ions and bromine radicals is low, and corrosion resistance when used in semiconductor manufacturing equipment can be obtained.
  • a third invention is a product at least partly comprising the alloy member for a semiconductor manufacturing apparatus according to the second invention.
  • the product may be a semiconductor manufacturing device.
  • the third invention it is possible to obtain a product using an alloy member for semiconductor manufacturing equipment with high corrosion resistance.
  • a highly corrosion-resistant semiconductor manufacturing apparatus can be obtained.
  • an alloy for semiconductor manufacturing equipment that can be suitably used in semiconductor manufacturing equipment, an alloy member for semiconductor manufacturing equipment, and a product using the same.
  • the difficulty of adsorbing chlorine ions and the like is expressed, for example, by the low adsorption energy (also called detachment energy) disclosed in Non-Patent Document 5, and it can be said that the smaller the adsorption energy, the more difficult it is to adsorb.
  • the adsorption energy is obtained by calculation, and the calculation method will be described later.
  • the adsorption energy is governed by the lattice constant and the lattice mismatch, which is the relative difference between them.
  • the lattice constant and the lattice mismatch which is the relative difference between them, are more dominant factors than other factors (surface energy, cohesive energy, electronegativity). Therefore, in the present invention, attention is focused on the lattice mismatch, which is the relative difference in lattice constant. Then, the present inventors have found that corrosive gas resistance can be obtained by using a material having a large lattice mismatch with respect to chlorine ions and the like.
  • the lattice mismatch is also called lattice mismatch, and is obtained by calculation, the calculation method of which will be described later.
  • Non-Patent Document 5 describes the bonding strength such as the interface strength between the wiring film and the barrier film of electronic components, and has aimed to reduce the lattice mismatch, ideally to zero. Contrary to these, the present invention obtains resistance to chloride ions and the like by increasing the lattice mismatch, that is, obtains the property of being difficult to react with chloride ions and the like, and is the opposite of the conventional idea.
  • the diffusion coefficient that penetrates from the surface to the inside As a result of examining the relationship between the lattice mismatch and the diffusion coefficient of chloride ions and the like for several alloys, it was found that the adsorption energy and the diffusion coefficient of chloride ions and the like (hereinafter sometimes simply referred to as the diffusion coefficient) can be suppressed by increasing the lattice mismatch.
  • the diffusion coefficient of chlorine ions and the like can also be obtained by calculation, and the calculation method will be described later.
  • the alloy according to this embodiment contains Ta and Mo as the first element group. Moreover, at least one selected from the group consisting of Nb, Hf, Zr, and W is included as the second element group.
  • Mo is 5 to 25 at%
  • each element of the second element is 10 to 35 at%.
  • at least one selected from the group of Au, Pt and Ag may be included as the third element group.
  • the third element group is included, when the total of the first element group, the second element group and the third element group is 100 at %, the amount of each element of the third element group contained is 10 at % to 25 at %.
  • the range of the element ratios of the first element group, the second element group and the third element group is recognized as the content of the elements constituting the high entropy alloy. It should be noted that the element ratio of all the elements constituting the alloy may be equal. For example, the maximum content of each constituent element is less than 50 atomic %, preferably 35 atomic % or less. Moreover, if the third element group is included, the mechanical properties are lowered, but higher corrosive gas resistance can be obtained.
  • the alloy according to the present embodiment may contain unavoidable impurities. For example, unavoidable elements such as C, N, and O may each be contained at 500 ppm or less.
  • FIG. 1 is a diagram showing the adsorption energy for chloride ions for some alloys
  • FIG. 2 is a diagram showing the diffusion coefficient of chloride ions in the alloy. 1 and 2 are calculated values assuming that there are no water molecules. Bromine radicals, although not shown, exhibit substantially the same tendency. It can be seen from FIG. 1 that the adsorption energy decreases as the temperature rises. In this embodiment, the adsorption energy of chlorine ions and the like is desirably 0.2 eV or less. In addition, even when water molecules are present, the same tendency as when water molecules are absent is shown.
  • the diffusion coefficient of chloride ions and the like at 800° C. is desirably 1.0 ⁇ 10 ⁇ 22 m 2 /s or less.
  • the alloy according to the present embodiment preferably has a small adsorption energy and a small diffusion coefficient in order to suppress the chlorine ions from approaching the surface and reacting with them or from penetrating and reacting with them.
  • the alloy according to the present embodiment has an adsorption energy (adsorption energy at 800°C) of chlorine ions and the like of 0.2 eV or less. It can be said that the adsorption energy is one indicator of the resistance to chlorine ions and the like.
  • the adsorption energy in this embodiment is more preferably 0.15 eV or less at room temperature, more preferably 0.1 eV or less, still more preferably 0.05 eV or less, still more preferably 0.035 eV or less, and even more preferably 0.031 eV.
  • alloys according to this embodiment have a body-centered cubic (bcc) crystal structure.
  • the crystal structure is observed by X-ray diffraction (XRD).
  • XRD X-ray diffraction
  • alloys having a single type of bcc structure alloys having a plurality of types of bcc structures may also be used.
  • the alloy according to the present embodiment most preferably has a body-centered cubic lattice structure in its entirety, preferably at a volume ratio (content ratio) of 60% or more, more preferably at a volume ratio (content ratio) of 80% or more.
  • Each item can be calculated using a molecular dynamics simulation as disclosed in Non-Patent Document 1 and the like.
  • the lattice constant for calculating the lattice mismatch was defined as follows based on Non-Patent Document 5. That is, the mismatch between the short-side lattice constant a and the long-side lattice constant b of the face-centered rectangular lattice representing the plane with the highest atomic number density, that is, the close-packed crystal plane described below, is expressed in percent, and is defined as the short-side lattice mismatch ⁇ a and the long-side lattice mismatch ⁇ b. Since ⁇ a with a short interatomic distance is more important, ⁇ a is defined as lattice mismatch in this embodiment unless otherwise specified. It is known from Non-Patent Document 5 and others that crystal planes other than the close-packed crystal planes defined here have a weak contribution to the adsorption energy and therefore do not have much effect.
  • the adsorption energy represents the energy required to change the adsorption state to the detachment state, and is obtained by subtracting the energy in the adsorption state from the energy in the detachment state, as shown in Equation (3) in Non-Patent Document 3.
  • Adsorption energies were calculated using self-developed molecular dynamics software, and in parallel with Dmol3 and Forcite of Materials Studio of Dassault Systèmes, and it was confirmed that the results of the two agree. The larger this value, the easier it is to adsorb.
  • the diffusion coefficient is obtained from the following Einstein relational expression 1 (formula (A) and formula (B)), as shown in formula (2) of Non-Patent Document 2.
  • Equation (B) is obtained by dividing the mean square displacement from t 0 to t + t 0 at the reference time set after sufficient relaxation by 6t, and actually converges in a finite time step, so the diffusion coefficient can be calculated without calculating to infinity.
  • r i (t+t 0 ) ⁇ r i (t 0 ) can be calculated from the equation of motion.
  • the diffusion coefficient of penetration in the direction perpendicular to the interface it can be calculated from the mean square displacement of the displacement in that direction. The larger the diffusion coefficient, the easier the penetration. In other words, it means that chlorine ions and the like easily enter and react from the surface.
  • Table 2 shows the calculation results of adsorption energies and diffusion coefficients for 13 alloys according to this embodiment. Each alloy is 100 at % in total, and Table 3 shows the element ratio of each alloy. Calculation results for lattice mismatch are omitted.
  • All the alloys according to the examples satisfy the adsorption energy of chloride ions and the like of 0.2 eV or less (0.05 eV or less) and the diffusion coefficient of chloride ions and the like of 1.0 ⁇ 10 ⁇ 22 m 2 /s or less (chlorine ions are 1.0 ⁇ 10 ⁇ 24 m 2 /s or less) in any calculation.
  • the adsorption energy of chloride ions and the like was 0.032 eV or less at room temperature, and the diffusion coefficient of chloride ions and the like was 4.0 ⁇ 10 ⁇ 27 m 2 /s or less, showing good results.
  • the alloy according to the present embodiment can be applied to an alloy member at least partially containing the alloy (for example, the surface of the base material) and to a product at least partially including the alloy member.
  • it is preferably applied to the inner surface of a chamber in a semiconductor manufacturing apparatus.
  • modeling can be performed by irradiating an alloy powder having a desired element ratio with an electron beam or a laser beam to melt and solidify.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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Abstract

Un alliage pour appareils de production de semi-conducteurs selon la présente invention contient du Ta et du Mo en tant que premier groupe d'éléments. Cet alliage pour appareils de production de semi-conducteurs contient en outre, en tant que second groupe d'éléments, au moins un élément qui est choisi dans le groupe constitué par Nb, Hf, Zr et W. Si le total du premier groupe d'éléments et du second groupe d'éléments est pris comme 100 % atomique, Ta est supérieur ou égal à 10 % atomique mais inférieur ou égal à 35 % atomique (ci-après exprimé en tant que 10-35 % atomique qui est le rapport élémentaire de celui-ci), Mo est de 5-25 % atomique, et chacun des seconds éléments est de 10-35 % atomique. De plus, l'énergie d'adsorption des ions chlorure ou similaires est inférieure ou égale à 0,2 eV.
PCT/JP2023/002127 2022-01-24 2023-01-24 Alliage pour appareils de production de semi-conducteurs, élément en alliage pour appareils de production de semi-conducteurs, et produit WO2023140389A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018070949A (ja) * 2016-10-28 2018-05-10 国立大学法人大阪大学 多成分系からなる合金
WO2021193529A1 (fr) * 2020-03-26 2021-09-30 日立金属株式会社 Alliage et élément
WO2021251145A1 (fr) * 2020-06-10 2021-12-16 国立大学法人大阪大学 Alliage à système multi-constituant
CN114606424A (zh) * 2022-05-11 2022-06-10 北京科技大学 一种高强高韧的Mo-Nb-Ta-Hf-Zr难熔高熵合金及制备方法
JP2023047623A (ja) * 2021-09-27 2023-04-06 国立大学法人東北大学 耐熱合金および耐熱合金の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018070949A (ja) * 2016-10-28 2018-05-10 国立大学法人大阪大学 多成分系からなる合金
WO2021193529A1 (fr) * 2020-03-26 2021-09-30 日立金属株式会社 Alliage et élément
WO2021251145A1 (fr) * 2020-06-10 2021-12-16 国立大学法人大阪大学 Alliage à système multi-constituant
JP2023047623A (ja) * 2021-09-27 2023-04-06 国立大学法人東北大学 耐熱合金および耐熱合金の製造方法
CN114606424A (zh) * 2022-05-11 2022-06-10 北京科技大学 一种高强高韧的Mo-Nb-Ta-Hf-Zr难熔高熵合金及制备方法

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