WO2023138487A1 - 半导体工艺设备及其工艺腔室 - Google Patents

半导体工艺设备及其工艺腔室 Download PDF

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Publication number
WO2023138487A1
WO2023138487A1 PCT/CN2023/072014 CN2023072014W WO2023138487A1 WO 2023138487 A1 WO2023138487 A1 WO 2023138487A1 CN 2023072014 W CN2023072014 W CN 2023072014W WO 2023138487 A1 WO2023138487 A1 WO 2023138487A1
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WIPO (PCT)
Prior art keywords
electrode
support
rod
introduction
bearing
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Ceased
Application number
PCT/CN2023/072014
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English (en)
French (fr)
Inventor
侯鹏飞
李建国
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to DE112023000629.6T priority Critical patent/DE112023000629T5/de
Priority to US18/730,489 priority patent/US12571103B2/en
Priority to KR1020247024104A priority patent/KR20240125001A/ko
Publication of WO2023138487A1 publication Critical patent/WO2023138487A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor process equipment and a process chamber thereof.
  • plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) equipment is the main technology used in the solar silicon wafer coating process, that is, an appropriate amount of process gas is introduced into the high-vacuum process tube, the electrodes are introduced into the graphite boat in the process tube, and the silicon wafers are respectively placed on the two poles of the graphite boat discharge.
  • PECVD plasma-enhanced chemical vapor deposition
  • a cantilever type PECVD equipment is proposed in the prior art, that is, the sealed furnace door of the process tube is integrated with the cantilever paddle.
  • the cantilever paddle sends the crystal boat into the process tube without falling action.
  • the crystal boat completes the coating process on the cantilever paddle, and the front electrode introduction structure is connected to the front furnace door for introducing electrodes into the wafer boat; another wafer boat is placed near the end of the process tube.
  • the front electrode structure and its access cables also move with the opening and closing of the front furnace door and the movement of the cantilever paddle, the front electrode structure is more complicated and takes up a lot of space, and because the cantilever structure has natural disadvantages, it is no longer suitable for existing large-capacity PECVD equipment.
  • the present application proposes a semiconductor process equipment and its process chamber to solve the complex structure of the electrode structure and its access cable movement in the prior art and the relatively small space occupied. Big technical problems, and the technical problems of avoiding cantilevered structures.
  • an embodiment of the present application provides a process chamber for a semiconductor process furnace, including: a furnace tube, a front flange, a rear flange, a support mechanism, a first electrode mechanism, and a second electrode mechanism; the front flange and the rear flange are respectively arranged at the furnace mouth and the furnace tail of the furnace tube; the support mechanism is arranged in the furnace tube, and the support mechanism includes two support rods, the first end of the support rod is connected to the front flange, and the second end of the support rod is connected to the rear flange.
  • the support rod is used to carry the first crystal boat and the second crystal boat;
  • Two, and respectively sleeved on the first ends of the two support rods, and the polarities of the two first electrode structures are opposite, used to carry the front end of the first crystal boat when the first crystal boat is loaded on the support rod, and respectively electrically connected to the two terminals at the front end of the first crystal boat, so as to introduce electrodes into the first crystal boat;
  • the second electrode mechanism is two, and both are arranged at the furnace tail of the furnace tube, for introducing electrodes into the second crystal boat when the second crystal boat is loaded on the support rod.
  • each of the first electrode mechanisms includes an electrode support assembly and an electrode introduction assembly, the electrode support assembly is sheathed on the first end of the corresponding support rod, and when the first wafer boat is loaded on the support rod, it carries the front end of the first wafer boat and is electrically connected to the corresponding terminal at the front end of the first wafer boat;
  • the electrode introduction assembly is passed through the front flange, one end of the electrode introduction assembly is electrically connected to the electrode support assembly, and the other end of the electrode introduction assembly is used for electrical connection with a radio frequency power supply.
  • the support mechanism further includes a plurality of bearing blocks, and the plurality of bearing blocks are arranged on the front flange and the rear flange, and the first end and the second end of the support rod are respectively fixedly connected to the front flange and the rear flange through at least one bearing block;
  • the electrode support assembly is clamped or inserted into the bearing block, and the two are electrically insulated.
  • the electrode support assembly includes a support tube, a connecting rod, a connecting part, an insulating part, and an adapter block, and the support tube is sheathed on the outer periphery of the support rod;
  • the connection block is detachably connected to the support tube for carrying the front end of the first crystal boat, and is electrically connected to the terminal corresponding to the front end of the first crystal boat; one end of the connecting rod is fixedly connected to the support tube, and is electrically conductive, and the other end of the connecting rod is fixedly connected to the connecting member, and is electrically conductive, and the connecting rod is arranged along the extending direction of the supporting rod; , used to electrically insulate the two.
  • the electrode support assembly further includes a positioning end plate and a positioning piece, the positioning end plate is arranged on the outer peripheral wall of the support tube, and the positioning piece is used for positioning and connecting the adapter block with the positioning end plate.
  • the connecting part includes a bearing plate and a connecting plate, one end of the bearing plate is fixedly connected to the connecting rod, and is electrically connected;
  • the connecting plate is a bending structure having two bent parts forming an included angle, one of the bent parts is arranged in close contact with the insulating part, and is fixedly connected to the other end of the supporting plate, and is electrically connected;
  • the other bent part is fixedly connected to the electrode introduction component, and is electrically connected;
  • the insulating part is provided with a step for supporting the bearing plate.
  • a communication pipe passing through the front flange is provided on the peripheral wall of the front flange;
  • the electrode introduction assembly includes an introduction rod, an insulating sleeve and a socket, the insulation sleeve is sleeved on the outer periphery of the introduction rod, and penetrates in the communication pipe, one end of the introduction rod is electrically connected to the electrode support assembly, and the other end of the introduction rod is electrically connected to the socket;
  • the outer periphery of the end of the insulation sleeve facing the socket is provided with a sealing boss for sealing connection with the end of the communication pipe;
  • the outer periphery of the end of the communication pipe is used to press the sealing boss onto the end of the communication pipe.
  • the supporting mechanism further includes a pressing member, and a limiting groove is provided on the bearing block for accommodating the first end or the second end of the support rod, and the pressing member is arranged on the bearing block, and is used for pressing the first end or the second end into the limiting groove.
  • the support mechanism further includes a plurality of first bearing sleeves, a plurality of second bearing sleeves and a plurality of position limiting members, the first bearing sleeves are set between the support rod, the support tube and the connecting rod, for isolating the support rod from the support tube and the connecting rod; a plurality of the second bearing sleeves are sleeved on the support rod, and distributed on the support rod for supporting the rear end of the first wafer boat and the front and rear ends of the second wafer boat; the plurality of limit members are fixedly arranged on the support rod for The first bearing sleeve and the second bearing sleeve are respectively positioned.
  • the support rod is made of semiconductor material, and the first bearing sleeve and the second bearing sleeve are both made of insulating material.
  • one of the second electrode mechanisms includes a first introduction rod
  • the other second electrode mechanism includes a second introduction rod. Both the first introduction rod and the second introduction rod are arranged on the rear furnace door of the process chamber for electrical connection with the rear end of the second wafer boat, and the polarities of the first introduction rod and the second introduction rod are opposite.
  • an embodiment of the present application provides a semiconductor process furnace, including the process chamber as provided in the first aspect.
  • a support mechanism is provided in the furnace tube, the first end and the second end of each of the two support rods for carrying the first crystal boat and the second crystal boat of the support mechanism are respectively connected to the front flange and the rear flange, and a first electrode mechanism is sleeved on the first end of each support rod, and two second electrode mechanisms are arranged at the tail of the furnace tube.
  • Each first electrode mechanism cooperates with the corresponding support rod to support the first wafer boat, and the first electrode mechanism guides the electrode into the first wafer boat; each support rod supports the second wafer boat, and the two second electrode mechanisms guide the electrode into the second wafer boat, so as to prevent the first electrode structure from moving with the cantilever paddle and the front furnace door, so that the structure of the first electrode mechanism is not only simple, but also the space occupation can be greatly reduced.
  • the supporting rod and the first electrode mechanism are used to carry the first boat, various disadvantages caused by the cantilever structure in the prior art can be avoided, thereby optimizing the performance of the semiconductor process equipment.
  • FIG. 1 is a schematic structural diagram of a process chamber provided in an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a support mechanism provided in an embodiment of the present application in cooperation with the first wafer boat and the second wafer boat;
  • FIG. 3 is a schematic structural diagram of an electrode support assembly provided in an embodiment of the present application.
  • Fig. 4 is a partially enlarged structural schematic diagram of a first electrode mechanism provided in an embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of the cooperation between the front boat foot of the first wafer boat and the adapter block provided by the embodiment of the present application;
  • FIG. 6 is a schematic structural diagram of a support mechanism provided by an embodiment of the present application.
  • Fig. 7 is a schematic cross-sectional view of an electrode introduction assembly provided by an embodiment of the present application.
  • An embodiment of the present application provides a process chamber for semiconductor process equipment.
  • the structural diagrams of the process chamber are shown in Figures 1 and 2, including: a furnace tube 1, a front flange 11, a rear flange 12, a support mechanism 2, a first electrode mechanism 3 and a second electrode mechanism 4;
  • the front flange 11 and the rear flange 12 are respectively arranged at the furnace mouth and the furnace tail of the furnace tube 1;
  • the support mechanism 2 is arranged in the furnace tube 1.
  • the support mechanism 2 includes two support rods 21.
  • the first end 211 of the support rod 21 is connected to the front flange 11, and the second end 212 of the support rod 21 is connected to the rear flange 12.
  • the support rod 21 is used to carry the first crystal boat 101 and the second crystal boat 102;
  • first electrode mechanisms 3 which are respectively sleeved on the first ends 211 of the two supporting rods 21, and the polarities of the two first electrode mechanisms 3 are opposite, and are used to carry the front end of the first crystal boat 101 when the first crystal boat 101 is loaded on the supporting rod 21, and are respectively electrically connected to the two terminals at the front end of the first crystal boat 101 (i.e., the front boat feet for introducing electrodes), so as to introduce the electrodes into the first crystal boat 101;
  • second electrode mechanisms 4 are arranged at the furnace end of the furnace tube 1 , and are used for introducing electrodes into the second wafer boat 102 when the second wafer boat 102 is loaded on the supporting rod 21 .
  • the process chamber of the embodiment of the present application can be applied to horizontal plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD) equipment, but the embodiment of the present application does not limit the specific type of semiconductor process equipment, and those skilled in the art can adjust the settings according to the actual situation.
  • the furnace tube 1 may be a tubular structure made of quartz material.
  • the front side of the furnace tube 1 is a furnace mouth, and a front flange 11 may be provided at the furnace mouth, and a front furnace door may be provided to facilitate the transmission of the first crystal boat 101 and the second crystal boat 102 into the furnace tube 1; support mechanism 2
  • the support rod 21 may adopt a rod-shaped structure made of semiconductor material, but the embodiment of the present application is not limited thereto.
  • the support rod 21 may be made of ceramic material or other insulating materials.
  • the first end 211 and the second end 212 of the support rod 21 are fixedly connected to the front flange 11 and the rear flange 12 respectively, so as to avoid the direct bearing of the furnace tube 1.
  • the front flange 11 and the rear flange 12 bear the load, which can prevent the support mechanism 2 and the two crystal boats from causing damage to the furnace tube 1, thereby effectively improving safety and stability, and effectively reducing the failure rate of the furnace tube 1, thereby reducing maintenance and application costs.
  • the first crystal boat 101 and the second crystal boat 102 are carried by the support rod 21, the two crystal boats are sent into the furnace tube 1 by the cantilever paddle and then fall down. After the two crystal boats are supported by the support rod 21, the cantilever paddle exits the furnace tube 1 and the furnace tube 1 is sealed by the front furnace door before the process is performed. That is, the embodiment of the present application can avoid various disadvantages caused by the cantilever structure in the prior art.
  • the two first electrode mechanisms 3 are respectively arranged on the two supporting rods 21 correspondingly.
  • the first electrode mechanism 3 is sheathed on the first end 211 and connected to the front flange 11 .
  • the two first electrode structures 3 are used to support both sides of the front end of the first wafer boat 101, and are respectively electrically connected to two terminals on the front end of the first wafer boat 101;
  • One of the two first electrode structures 3 may be positive and the other may be negative, but the embodiment of the present application is not limited thereto.
  • the first electrode structures 3 may also be arranged in pairs, and multiple pairs may be provided, and the two first electrode structures 3 in each pair are respectively positive and negative. ; Multiple pairs of first electrode structures 3 are used to introduce electrodes into the first crystal boat 101 together.
  • the above-mentioned design not only avoids the disadvantages caused by the cantilever paddle bearing of the first wafer boat 101, but also introduces electrodes at the front end of the first wafer boat 101, so that the embodiment of the present application has a simple structure and can reduce space occupation.
  • the two second electrode mechanisms 4 are all arranged at the furnace end of the furnace tube 1, that is, the two second electrode mechanisms 4 are arranged close to the second end 212 of the support rod 21, and the two second electrode mechanisms 4 are connected to the second crystal boat 102 (that is, respectively connected to the second crystal boat 102).
  • the two terminals, ie the rear boat feet) are electrically connected to lead the electrodes into the second boat 102 .
  • One of the two second electrode mechanisms 4 can be positive, while the other one can be negative, but the embodiment of the present application is not limited thereto. Similar to the first electrode structure 3, the second electrode mechanisms 4 can also be arranged in pairs, and the logarithm is the same as the logarithm of the support rods 21, and they are arranged in one-to-one correspondence. Multiple pairs of second electrode mechanisms 4 are used to introduce electrodes into the second crystal boat 102 together.
  • a support mechanism is provided in the furnace tube, a first electrode mechanism is provided at the first end of the support rod, and a second electrode mechanism is provided at the tail of the furnace tube.
  • the first electrode mechanism cooperates with the support rods to support the first wafer boat, and the first electrode mechanism guides the electrodes into the first wafer boat; the support rod supports the second wafer boat, and the second electrode mechanism guides the electrodes into the second wafer boat, so as to prevent the first electrode structure from moving with the cantilever paddle and the front furnace door, thereby not only making the structure of the first electrode mechanism simple, but also greatly reducing the space occupied.
  • the supporting rod and the first electrode mechanism are used to carry the first boat, various disadvantages caused by the cantilever structure in the prior art can be avoided, thereby optimizing the performance of the semiconductor process equipment.
  • the first electrode mechanism 3 includes an electrode support assembly 32 and an electrode introduction assembly 33.
  • the electrode support assembly 32 is sheathed on the first end 211 of the corresponding support rod 21, and when the first wafer boat 101 is loaded on the support rod 21, it carries the front end of the first wafer boat 101 and is electrically connected to the corresponding terminal at the front end of the first wafer boat 101.
  • the electrode introduction assembly 33 is installed on the front flange 11 , one end of the electrode introduction assembly 33 is electrically connected to the electrode support assembly 32 , and the other end of the electrode introduction assembly 33 is used for electrical connection with a radio frequency power supply.
  • each first electrode mechanism 3 includes an electrode support assembly 32 and an electrode introduction assembly 33, wherein the electrode support assembly 32 is a sleeve structure as a whole, which can be sleeved on the first end 211 of the corresponding support rod 21, and when the first wafer boat 101 is loaded on the support rod 21, it carries the front end of the first crystal boat 101 and is electrically connected to the corresponding terminal at the front end of the first wafer boat 101. Since the electrode support assembly 32 is sheathed (for example, concentrically sheathed) on the support rod 21 , it can save a lot of space.
  • the electrode introduction assembly 33 can adopt a rod-shaped structure as a whole, so as to pass through the front flange 11 and extend into the front flange 11, so that one end of the electrode introduction assembly 33 is electrically connected to the electrode support assembly 32, and the other end is used to electrically connect to the radio frequency power supply, so as to introduce the electrode to the electrode support assembly 32, and then to the first crystal boat 101.
  • the electrode support assembly 32 and the electrode introduction assembly 33 are both arranged on the front flange 11, the overall position of the first electrode mechanism 3 is relatively close to the furnace mouth, so as to facilitate disassembly and maintenance, thereby greatly improving the efficiency of disassembly and maintenance.
  • the support mechanism 2 also includes a plurality of bearing blocks 22, and the plurality of bearing blocks 22 are arranged on the front flange 11 and the rear flange 12.
  • the first end 211 and the second end 212 of the support rod 21 are respectively fixedly connected to the front flange 11 and the rear flange 12 through at least one bearing block 22.
  • the electrode support assembly 32 is clamped or inserted into the bearing block 22, and the two are electrically insulated.
  • the bottom surface of the bearing block 22 may have a circular arc surface structure for cooperating with the inner arcs of the front flange 11 and the rear flange 12.
  • the top of the bearing block 22 is used to fix the first end 211 or the second end 212 of the support rod 21.
  • two of them are respectively located at the first ends 211 of the two support rods 21, and the other two are respectively located at the second ends 212 of the two support rods 21, and the bottom of each bearing block 22 is fitted to the inner arc surface of the front flange 11 or the rear flange 12 for fixing the corresponding support rods 21.
  • a plurality of oblong through holes arranged along the circumferential direction of the furnace body 1 are provided on the supporting block 22, and a plurality of fasteners pass through the oblong through holes to connect with the front flange 11 or the rear flange 12, and due to the effect of the oblong through holes, the distance between the two support rods 21 in the circumferential direction of the furnace body 1 can be adjusted freely, so that the embodiment of the present application can be applied to wafer boats of different widths to improve applicability and scope of application; interference.
  • the ends of the electrode support assembly 32 can be clamped or inserted into the two sides of the carrying block 22, so as to prevent the electrode support assembly 32 from carrying the first crystal boat 101 Rotation occurs at this time, ensuring that the contact position of the front boat foot of the first wafer boat 101 is horizontal and does not rotate, reducing the probability of poor contact, thereby improving the stability of the embodiment of the present application.
  • the electrode support assembly 32 includes a support tube 3211, a connecting rod 3212, a connecting part 3213, an insulating part, and an adapter block 323.
  • the support tube 3211 is sleeved on the outer periphery of the support rod 21;
  • the adapter block 323 is detachably connected to the support tube 3211 for carrying the front end of the first wafer boat 101 and is electrically connected to the terminal corresponding to the front end of the first wafer boat 101;
  • One end is fixedly connected to the support tube 3211, and is electrically conductive, and the other end of the connecting rod 3212 is fixedly connected to the connecting member 3213, and is electrically conductive;
  • the connecting rod 3212 is arranged along the extension direction of the supporting rod 21;
  • the connecting member 3213 is clamped or plugged with the bearing block 22, and the connecting member 3213 is used for electrical connection with the electrode introduction assembly 33;
  • the insulating member is arranged between the connecting member 3213 and the bearing
  • the support tube 3211 has two circular rings and a circular tube coaxially arranged to form a sleeve structure, and two connecting rods 3212 are respectively arranged on both sides of the sleeve structure to realize the fixed connection between the support tube 3211 and the connecting member 3213.
  • One end of the connecting rod 3212 is fixedly connected to the support tube 3211 , for example, a round tube of the support tube 3122 , and the other end is fixedly connected to the connecting member 3213 .
  • the connection part 3213 is snapped and fixed with both sides of the bearing block 22, or other detachable connection methods such as plugging can also be used.
  • the embodiment of the present invention has no special limitation on this.
  • connection part 3213 is used for electrical connection with the electrode introduction assembly 33, and an insulating part can be provided between the connection part 3213 and the bearing block 22 to electrically insulate the two, so as to avoid short circuits between the electrode introduction assembly 33 and the electrode support assembly 32 and the support rod 21.
  • the insulating component can also prevent the support tube 3211 from rotating, thereby improving the stability of the first crystal boat 101 .
  • the top surface of the transfer block 323 is used to carry the terminals of the first crystal boat 101 (i.e., the front boat feet), and the bottom of the transfer block 323 can be provided with a semi-cylindrical groove for detachably matching with the outer periphery of the support tube 3211, for example
  • the adapter block 323 can be detachably positioned and connected to the outer circumference of the round tube of the support tube 3211 .
  • the transfer block 323 is partly located above the support tube 3211, and partly located outside the support tube 3211, and the two transfer blocks 323 on the two support tubes 3211 cooperate with each other to support the two terminals of the first wafer boat 101 (ie, the front boat legs).
  • the adapter block 323 and the support tube 3211 are detachably connected, the adapter block 323 can be directly separated from the support tube 3211 when maintenance is required, so as to polish the coating layer of the adapter block 323, thereby greatly improving the disassembly and maintenance efficiency, and further reducing application and maintenance costs.
  • the embodiment of the present application does not limit the specific structure of the electrode support assembly 32 , for example, the electrode support assembly 32 adopts an integrated structure. Therefore, this embodiment of the present application does not limit it, and those skilled in the art can adjust the settings according to actual conditions.
  • the electrode support assembly 32 also includes a positioning end plate 324 and a positioning piece 325, the positioning end plate 324 is arranged on the outer peripheral wall of the support tube 3122, and the positioning piece 325 is used to position and connect the adapter block 323 and the positioning end plate 324.
  • the adapter block 323 is provided with a clamping structure 3232 for clamping with a clamping tool, so that the adapter block 323 can be separated from the positioning member 325 under the action of the clamping tool, and passed out of the furnace tube 1 .
  • the positioning end plate 324 can be an "L"-shaped structure as a whole, and the horizontal plate of the positioning end plate 324 is located at the bottom of the support tube 3211, and an arc-shaped gap can be opened on the vertical plate to cooperate with the outer peripheral wall of the support tube 3211 and be fixedly connected.
  • the positioning piece 325 is disposed on the vertical plate of the positioning end plate 324 , and the axial direction of the positioning piece 325 is parallel to the axial direction of the support tube 3211 .
  • the adapter block 323 can be penetrated with a positioning hole 3231, and the adapter block 323 can move along the axial direction of the support tube 3211.
  • the clamping structure 3232 is, for example, a through hole through the adapter block 323 for clamping with the clamping tool, that is, when the adapter block 323 needs to be maintained, the clamping tool can extend into the clamping structure 3232, In order to facilitate the transfer of the adapter block 323 to the outside of the furnace tube 1, thereby greatly improving the efficiency of disassembly and maintenance; and also avoiding the damage of the furnace tube 1 caused by the fall of the adapter block 323, thereby improving the safety of the embodiment of the present application.
  • the embodiment of the present application does not limit the positioning method between the adapter block 323 and the support tube 3211.
  • the outer periphery of the support tube 3211 is provided with a plurality of positioning pieces 325, and the side of the adapter block 323 that cooperates with the support tube 3211 is provided with a plurality of corresponding positioning holes 3231. Therefore, this embodiment of the present application does not limit it, and those skilled in the art can adjust the settings according to actual conditions.
  • the connecting member 3213 includes a bearing plate 3214 and a connecting plate 3215.
  • One end of the bearing plate 3214 is fixedly connected to the connecting rod 3212 and is electrically connected;
  • the connecting plate 3215 is a bending structure having two bent parts at an angle, and one of the bent parts is attached to the insulating component, and is fixedly connected to the other end of the bearing plate 3214 and is electrically connected;
  • the other bent part is connected to the electrode introduction assembly 33 is fixedly connected and connected;
  • the insulating part is provided with a step for supporting the bearing plate 3214 .
  • the connecting part 3213 includes two oppositely arranged bearing plates 3214, the two bearing plates 3214 are respectively arranged on both sides of the bearing block 22, and the two bearing plates 3214 are connected to the ends of the support rods 3212 through the end plates, and the parts can be fixedly connected by welding. Adopting this design makes the structure of the embodiment of the present application simple and easy to implement, and can further improve the stability of the embodiment of the present application.
  • the connection plate 3215 can be an "L"-shaped structure, wherein the vertical plate of the connection plate 3215 can be attached to the bearing plate 3214, and partially attached to the insulating component.
  • connection plate 3215 can be used to connect with the electrode introduction assembly 33, that is, the connection plate 3215 can be a bent structure, one of which is fixedly connected to the bearing plate 3214, and is electrically conductive; pass.
  • the insulating part may include three insulating plates 322, wherein two insulating plates 322 are respectively arranged on both sides of the bearing block 22, and are located between the two bearing plates 3214 of the connection part 3213 and the bearing block 22, so as to prevent a short circuit between the connection part 3213 and the bearing block 22. Furthermore, a stepped surface is provided on the side facing away from the two insulation boards 322 for accommodating the carrying board 3214 and snapping or inserting it for butt-connection.
  • the connecting part 3213 is used to limit the position, so as to further improve the stability of the support tube 3211 and avoid rotation, but the embodiment of the present application is not limited thereto.
  • Another insulating plate 322 can be arranged on the outside of the bearing block 22, that is, the insulating plate 322 is arranged on the side of the bearing block 22 away from the support rod 21, which can prevent the occurrence of discharge and sparking between the bearing block 22 and the connecting part 3213 and the front furnace door in actual application, thereby further improving the safety and stability of the embodiment of the present application.
  • Each insulating plate 322 and the bearing block 22 may be connected by bolts, but this embodiment of the present application is not limited thereto.
  • the embodiment of the present application does not limit the specific structure of the insulating component.
  • the insulating component may also adopt an integral structure, that is, three insulating plates 322 are formed integrally. Therefore, this embodiment of the present application does not limit it, and those skilled in the art can adjust the settings according to actual conditions.
  • a communication pipe (not shown) passing through the front flange 11 is provided on the peripheral wall of the front flange 11; 33 is electrically connected; the insulating sleeve 332 is provided with a sealing boss 3321 towards the outer periphery of the end of the socket 33, which is used to seal the connection with the end of the connecting pipe; the socket 333 is sleeved on the outer periphery of the end of the connecting pipe, and is used to press the sealing boss 3321 on the end of the connecting pipe.
  • one end of the connecting pipe is connected to the outer peripheral wall of the front flange 11, and the other end is provided with external threads, for example, and the whole connecting pipe extends radially along the front flange 11, and the connecting pipe is used to connect the inside and outside of the front flange 11.
  • the outer periphery of the lead-in rod 331 is covered with an insulating sheath 332 , so that the lead-in rod 331 can be nested in the communicating pipe, and the insulating sheath 332 is insulated from the communicating pipe and the front flange 11 .
  • One end of the introduction rod 331 located in the front flange 11 is electrically connected to the electrode support assembly 32, for example, is electrically connected to the electrode support assembly 32 through the connection plate 3215 and the fastener 334, but the embodiment of the present application is not limited thereto.
  • One end of the lead-in rod 331 located outside the front flange 11 is electrically connected to the radio frequency power supply through the socket 333 .
  • the end of the insulating sleeve 332 located outside the front flange 11 is provided with a sealing boss 3321, that is, the outer periphery of the end of the insulating sleeve 332 facing the socket 333 is provided with a sealing boss 3321.
  • the sealing boss 3321 is pressed against the end surface of the communication pipe, and a flexible sealing ring (not shown in the figure) is arranged between the two, so as to realize the sealing between the insulating sleeve 332 and the front flange 11 .
  • the socket 333 can adopt a coaxial cable socket, and the socket 333 is connected with the external thread at the end of the connecting pipe by tightening the nut. While realizing the connection with the introduction rod 331, the sealing boss 3321 and the flexible seal can also be pressed tightly on the end surface of the connecting pipe, so as to realize the sealed connection between the electrode introduction assembly 33 and the front flange 11.
  • the structure of the electrode introduction assembly 33 is simple and easy to implement, and because the socket 333 is connected to the connecting pipe in a screwed manner, the embodiment of the present application can be disassembled and maintained only by manual operation, thereby greatly improving the efficiency of disassembly and maintenance.
  • the embodiment of the present application does not limit the specific structure of the electrode introduction assembly 33 , as long as it can achieve sealing with the front flange 11 and introduce the electrode into the electrode support assembly 32 at the same time. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.
  • the support mechanism 2 further includes a pressing member 23 , and a limiting groove 221 is provided on the bearing block 22 for accommodating the first end 211 or the second end 212 of the support rod 21 .
  • a limiting groove 221 is provided on the bearing block 22, and the limiting groove 221 is a semi-cylindrical groove for accommodating the first end 211 or the second end 212 of the support rod 21, but the embodiment of the present application does not limit the specific shape of the limiting groove 221, as long as it is set corresponding to the shape of the support rod 21.
  • the pressing member 23 can adopt a semi-arc plate-shaped structure.
  • the pressing member 23 covers the limiting groove 221 and is connected to the bearing block 22 through a plurality of bolts.
  • the structure of the embodiment of the present application is simple, and the stability and safety are improved, thereby reducing the failure rate and prolonging the service life.
  • the embodiment of the present application must include the pressing member 23, for example, the side of the bearing block 22 facing the support rod 21 is provided with an accommodating groove for accommodating the support rod 21 and defining the position of the support rod 21. Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art Technicians can adjust the settings by themselves according to the actual situation.
  • the support mechanism 2 also includes a plurality of first bearing sleeves 24, a plurality of second bearing sleeves 25, and a plurality of limiters 26.
  • the first bearing sleeves 24 are arranged between the support rod 21, the support tube 3211 and the connecting rod 3212, and are used to isolate the support rod 21 from the support tube 3211 and the connecting rod 3212.
  • a plurality of limiting members 26 are fixedly arranged on the support rod 21 for respectively positioning the first bearing sleeve 24 and the second bearing sleeve 25 .
  • the support rod 21 is made of semiconductor material, and the first bearing sleeve 24 and the second bearing sleeve 25 are both made of insulating material.
  • the support rod 21 can be made of high-strength semiconductor material, so that the support rod 21 has excellent characteristics such as high hardness, high strength, high temperature resistance and corrosion resistance, thereby improving the stability of the support rod 21 and prolonging its service life.
  • Both the first end 211 and the second end 212 of the supporting rod 21 are connected to the front flange 11 and the rear flange 12 through the supporting block 22 , so that the first wafer boat 101 and the second wafer boat 102 are carried by soft landing.
  • the two first carrying sleeves 24 are respectively disposed on the first ends 211 of the two supporting rods 21, and the length extends to the position of the terminal (ie, the front boat foot) of the first wafer boat 101, so that the supporting tube 3211 of the first electrode structure 3 is sleeved thereon.
  • the first bearing sleeve 24 is made of insulating material such as ceramics, which can realize the insulation between the support tube 3211 and the support rod 21, thereby preventing short circuit between the two.
  • the support rod 21 is made of insulating material, the specific material of the first bearing sleeve 24 may not be considered.
  • the two second carrying sleeves 25 are disposed on the two support rods 21 and are disposed close to the second ends 212 of the two support rods 21 for supporting the rear legs of the second wafer boat 102 in cooperation with each other.
  • Four second bearing sleeves 25 are arranged on the two support rods 21, and are close to the middle of the support rods 21, wherein the two second bearing sleeves 25 relatively close to the second end 212 are used to cooperate with each other to support the front boat feet of the second crystal boat 102; The boat feet and the back boat feet.
  • the second carrier sleeve 25 is made of insulating material such as ceramics, which can realize the insulation between the second wafer boat 102 and the support rod 21 , so as to prevent short circuit between the two.
  • the support rod 21 is made of insulating material
  • the specific material of the second bearing sleeve 25 may not be considered.
  • the stopper 26 is, for example, made of a metal material with certain elasticity, and the specific structure of the stopper 26 can be an annular structure.
  • the plurality of stoppers 26 can be arranged corresponding to a plurality of first bearing sleeves 24 and the second bearing sleeves 25 respectively, and are sleeved on the support rod 21.
  • the limiter 26 can fix and limit the first bearing sleeve 24 and the second bearing sleeve 25 to prevent them from moving axially along the support rod 21. 01 and the legs of the second wafer boat 102 are more easily slid between the two supporting rods 21, thereby improving the working efficiency and stability of the wafer transporting boat.
  • one of the two second electrode mechanisms 4 includes a first introduction rod 41, and the other includes a second introduction rod 42. Both the first introduction rod 41 and the second introduction rod 42 are arranged on the rear furnace door of the process chamber for electrical connection with the rear end of the second wafer boat 102, and the polarities of the first introduction rod 41 and the second introduction rod 42 are opposite.
  • both the first lead-in rod 41 and the second lead-in rod 42 are rear plug-in electrode rods, and are arranged on the rear furnace door (not shown in the figure) of the process chamber for connecting with a radio frequency power supply.
  • Both the first lead-in rod 41 and the second lead-in rod 42 are used to connect with the electrode jacks on the second crystal boat 102 to complete the electrical connection with the second crystal boat 102, and since the two electrode sockets of the second crystal boat 102 are arranged in a vertical distribution manner, the first lead-in rods 41 and the second lead-in rods 42 are arranged in a corresponding manner, that is, the first lead-in rods 41 and the second lead-in rods 42 are arranged in a vertical distribution manner.
  • the first lead-in rod can be positive
  • the second lead-in rod 42 can be negative, but the embodiment of the present application is not limited thereto, and the positions and polarities of the first lead-in rod 41 and the second lead-in rod 42 can be interchanged.
  • the second electrode mechanism 4 and the second wafer boat 102 are connected in a soft-landing electrode connection mode due to the connection by plugging, thereby greatly improving the process stability and the process yield of silicon wafers.
  • the embodiment of the present application does not limit the specific implementation of the second electrode mechanism 4,
  • the second electrode mechanism 4 can also adopt the same structure as the first electrode mechanism 3 to implement introducing electrodes into the second crystal boat 102 . Therefore, the embodiment of the present application is not limited thereto, and those skilled in the art can adjust the setting by themselves according to the actual situation.
  • an embodiment of the present application provides a semiconductor process equipment, including the process chamber provided in the above embodiments, wherein the first electrode mechanism in the process chamber is used to introduce electrodes into the first wafer boat, and the second electrode mechanism is used to introduce electrodes into the second wafer boat.
  • a support mechanism is provided in the furnace tube, a first electrode mechanism is provided at the first end of the support rod, and a second electrode mechanism is provided at the tail of the furnace tube.
  • the first electrode mechanism cooperates with the support rods to support the first wafer boat, and the first electrode mechanism guides the electrodes into the first wafer boat; the support rod supports the second wafer boat, and the second electrode mechanism guides the electrodes into the second wafer boat, so as to prevent the first electrode structure from moving with the cantilever paddle and the front furnace door, thereby not only making the structure of the first electrode mechanism simple, but also greatly reducing the space occupied.
  • the supporting rod and the first electrode mechanism are used to carry the first boat, various disadvantages caused by the cantilever structure in the prior art can be avoided, thereby optimizing the performance of the semiconductor process equipment.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features. In the description of the present invention, unless otherwise specified, "plurality" means two or more.
  • connection should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediary, or an internal connection between two components.

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Abstract

本申请实施例提供了一种半导体工艺设备的工艺腔室。该工艺腔室的前法兰和后法兰分别设置在炉管的炉口和炉尾处；支撑机构设置于炉管内，支撑机构包括有两个支撑杆，支撑杆用于承载第一晶舟及第二晶舟；两个第一电极机构分别套设于两个支撑杆的第一端，并且两个第一电极结构的极性相反，用于在第一晶舟装载于支撑杆上时，承载第一晶舟前端，并且分别与第一晶舟前端的两个端子电连接，以将电极引入至第一晶舟；两个第二电极机构均设置于炉管的炉尾处，用于在第二晶舟装载于支撑杆上时，将电极引入至第二晶舟。本申请实施例实现了避免第一电极结构随悬臂桨及炉门运动，从而不仅使得第一电极机构结构简单，而且还能大幅减小空间占用。

Description

半导体工艺设备及其工艺腔室 技术领域
本申请涉及半导体加工技术领域，具体而言，本申请涉及一种半导体工艺设备及其工艺腔室。
背景技术
目前，等离子体增强化学气象沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)设备是太阳能硅片镀膜工艺主要采用的技术，即高真空的工艺管内通入适量的工艺气体，将电极引入工艺管内石墨舟，硅片分别置于石墨舟放电的两极上，在一定温度下利用低压射频辉光放电使工艺气体发生化学反应，在硅片表面生成一层SixNy薄膜。
现有技术中提出一种悬臂式PECVD设备，即工艺管的密封炉门与悬臂桨为一体结构，悬臂桨将晶舟送进工艺管后无下落动作，晶舟在悬臂桨上完成镀膜工艺，并且前电极引入结构与前炉门连接，用于将电极引入该晶舟；另一晶舟放置于工艺管靠近炉尾的位置，后电极引入结构与后炉门连接，以用于将电极引入该晶舟，即现有技术中采用了双舟方式来提高硅片的产能。但是由于前电极结构及其接入电缆也随前炉门的开合和悬臂桨运动而移动，使得前电极结构较为复杂，而且占用空间较大，并且由于悬臂式结构具有天然弊端，已经不再适用现有大产能PECVD设备。
发明内容
本申请针对现有方式的缺点，提出一种半导体工艺设备及其工艺腔室，用以解决现有技术存在的电极结构及其接入线缆运动结构复杂并且占用空较 大的技术问题，以及避免采用悬臂式结构的技术问题。
第一个方面，本申请实施例提供了一种半导体工艺炉的工艺腔室，包括：炉管、前法兰、后法兰、支撑机构、第一电极机构及第二电极机构；所述前法兰和后法兰分别设置在所述炉管的炉口和炉尾处；所述支撑机构设置于所述炉管内，所述支撑机构包括有两个支撑杆，所述支撑杆的第一端与所述前法兰连接，所述支撑杆的第二端与所述后法兰连接，所述支撑杆用于承载第一晶舟及第二晶舟；所述第一电极机构为两个，且分别套设于两个所述支撑杆的第一端，并且两个所述第一电极结构的极性相反，用于在所述第一晶舟装载于所述支撑杆上时，承载所述第一晶舟前端，并且分别与所述第一晶舟前端的两个端子电连接，以将电极引入至所述第一晶舟；所述第二电极机构为两个，且均设置于所述炉管的所述炉尾处，用于在所述第二晶舟装载于所述支撑杆上时，将电极引入至所述第二晶舟。
于本申请的一实施例中，每个所述第一电极机构均包括有电极支撑组件及电极引入组件，所述电极支撑组件套设于对应的所述支撑杆的所述第一端，并在所述第一晶舟装载于所述支撑杆上时，承载所述第一晶舟前端，且与所述第一晶舟前端的对应的所述端子电连接；
所述电极引入组件穿设于所述前法兰上，所述电极引入组件的一端与所述电极支撑组件电连接，所述电极引入组件的另一端用于与射频电源电连接。
于本申请的一实施例中，所述支撑机构还包括有多个承载块，多个所述承载块设置于所述前法兰和所述后法兰上，所述支撑杆的所述第一端及所述第二端均通过至少一个所述承载块分别与所述前法兰和所述后法兰固定连接；
所述电极支撑组件与所述承载块卡接或插接，且二者之间电绝缘。
于本申请的一实施例中，所述电极支撑组件包括有支撑管、连接杆、连接部件、绝缘部件及转接块，所述支撑管套设于所述支撑杆的外周；所述转 接块可拆卸的连接于所述支撑管上，用于承载所述第一晶舟前端，且与所述第一晶舟前端对应的所述端子电连接；所述连接杆的一端与所述支撑管固定连接，且电导通，所述连接杆的另一端与所述连接部件固定连接，且电导通，并且所述连接杆沿所述支撑杆的延伸方向设置；所述连接部件与所述承载块卡接或插接，所述连接部件用于与所述电极引入组件电连接；所述绝缘部件设置于所述连接部件与所述承载块之间，用于将二者电绝缘。
于本申请的一实施例中，所述电极支撑组件还包括有定位端板及定位件，所述定位端板设置于所述支撑管的外周壁上，所述定位件用于将所述转接块与所述定位端板定位连接。
于本申请的一实施例中，所述连接部件包括承载板和连接板，所述承载板的一端与所述连接杆固定连接，且电导通；所述连接板为具有呈夹角的两个弯折部的折弯结构，其中一个所述折弯部与所述绝缘部件贴合设置，并与所述承载板的另一端固定连接，且电导通；另一个所述折弯部与所述电极引入组件固定连接，且电导通；所述绝缘部件上设置有用于支撑所述承载板的台阶。
于本申请的一实施例中，前法兰的周壁上设置有贯通所述前法兰的连通管；所述电极引入组件包括有引入杆、绝缘套及插座，所述绝缘套套设于所述引入杆的外周，且穿设于所述连通管内，所述引入杆的一端与所述电极支撑组件电连接，所述引入杆的另一端与所述插座电连接；所述绝缘套朝向所述插座的端部外周设置有密封凸台，用于与所述连通管的端部密封连接；所述插座套设于所述连通管的端部外周，用于将所述密封凸台压紧于所述连通管的端部上。
于本申请的一实施例中，所述支撑机构还包括有压紧件，所述承载块上开设限位槽，用于容置所述支撑杆的所述第一端或所述第二端，所述压紧件设置于所述承载块上，用于将所述第一端或所述第二端压紧于所述限位槽内。
于本申请的一实施例中，所述支撑机构还包括有多个第一承载套、多个第二承载套和多个限位件，所述第一承载套设于所述支撑杆与所述支撑管和所述连接杆之间，用于将所述支撑杆与所述支撑管和所述连接杆隔离；多个所述第二承载套套设于所述支撑杆上，且分布于所述支撑杆上用于支撑所述第一晶舟的后端和所述第二晶舟的前端和后端的位置处；多个所述限位件固定设置于所述支撑杆上，用于分别定位所述第一承载套和所述第二承载套。
于本申请的一实施例中，所述支撑杆为半导体材质，所述第一承载套及所述第二承载套均为绝缘材质。
于本申请的一实施例中，其中一个所述第二电极机构包括第一引入杆，另一个所述第二电极机构包括第二引入杆，所述第一引入杆及所述第二引入杆均设置于所述工艺腔室的后炉门上，用于与所述第二晶舟的后端电连接，并且所述第一引入杆及所述第二引入杆的极性相反。
第二个方面，本申请实施例提供了一种半导体工艺炉，包括如第一个方面提供的的工艺腔室。
本申请实施例提供的技术方案带来的有益技术效果是：
本申请实施例通过在炉管内设置有支撑机构，该支撑机构的用于承载第一晶舟和第二晶舟的两个支撑杆中每一者的第一端和第二端分别连接在前法兰和后法兰上，并且在每个支撑杆的第一端均套设有第一电极机构，以及在炉管的炉尾处设置两个第二电极机构。通过每个第一电极机构与对应的支撑杆配合支撑第一晶舟，以及第一电极机构将电极引入第一晶舟；通过每个支撑杆对第二晶舟进行支撑，以及两个第二电极机构将电极引入第二晶舟，避免第一电极结构随悬臂桨及前炉门运动，从而不仅使得第一电极机构结构简单，而且还能大幅减小空间占用。此外，由于采用支撑杆及第一电极机构配合承载第一晶舟，可以避免现有技术中采用悬臂式结构所带来的各种弊端，从而优化半导体工艺设备的性能。
本申请附加的方面和优点将在下面的描述中部分给出，这些将从下面的描述中变得明显，或通过本申请的实践了解到。
附图说明
本申请上述的和/或附加的方面和优点从下面结合附图对实施例的描述中将变得明显和容易理解，其中：
图1为本申请实施例提供的一种工艺腔室的结构示意图；
图2为本申请实施例提供的一种支撑机构与第一晶舟及第二晶舟配合的结构示意图；
图3为本申请实施例提供的一种电极支撑组件的结构示意图；
图4为本申请实施例提供的一种第一电极机构的局部放大的结构示意图；
图5为本申请实施例提供的一种第一晶舟的前舟脚与转接块配合的结构示意图；
图6为本申请实施例提供的一种支撑机构的结构示意图；
图7为本申请实施例提供的一种电极引入组件的剖视示意图。
具体实施方式
下面详细描述本申请，本申请的实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的部件或具有相同或类似功能的部件。此外，如果已知技术的详细描述对于示出的本申请的特征是不必要的，则将其省略。下面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能解释为对本申请的限制。
本技术领域技术人员可以理解，除非另外定义，这里使用的所有术语(包括技术术语和科学术语)，具有与本申请所属领域中的普通技术人员的一般理解相同的意义。还应该理解的是，诸如通用字典中定义的那些术语，应该 被理解为具有与现有技术的上下文中的意义一致的意义，并且除非像这里一样被特定定义，否则不会用理想化或过于正式的含义来解释。
下面以具体地实施例对本申请的技术方案以及本申请的技术方案如何解决上述技术问题进行详细说明。
本申请实施例提供了一种半导体工艺设备的工艺腔室，该工艺腔室的结构示意图如图1及图2所示，包括：炉管1、前法兰11、后法兰12、支撑机构2、第一电极机构3及第二电极机构4；
前法兰11和后法兰12分别设置在所述炉管1的炉口和炉尾处；
支撑机构2设置于炉管1内，支撑机构2包括有两个支撑杆21，支撑杆21的第一端211与前法兰11连接，支撑杆21的第二端212与后法兰12连接，支撑杆21用于承载第一晶舟101及第二晶舟102；
第一电极机构3为两个，且分别套设于两个支撑杆21的第一端211，并且两个第一电极机构3的极性相反，用于在第一晶舟101装载于支撑杆21上时，承载第一晶舟101的前端，并且分别与第一晶舟101前端的两个端子(即，用于引入电极的前舟脚)电连接，以将电极引入第一晶舟101；
第二电极机构4为两个，且均设置于炉管1的炉尾处，用于在第二晶舟102装载于支撑杆21上时，将电极引入第二晶舟102。
如图1及图2所示，本申请实施例的工艺腔室可以应用于卧式等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition，PECVD)设备中，但是本申请实施例并不限定半导体工艺设备的具体类型，本领域技术人员可以根据实际情况自行调整设置。炉管1具体可以是石英材质制成的管状结构，炉管1的前侧为炉口，该炉口处可以设置有前法兰11，并且配合设置有前炉门，以便于向炉管1内传送第一晶舟101及第二晶舟102；炉管1的后侧为炉尾，该炉尾处可以设置有后法兰12，并且可以配合设置有后炉门或者直接采用封闭式结构，但是本申请实施例并不以上为限。支撑机构2的 支撑杆21可以采用半导体材质制成的杆状结构，但是本申请实施例并不以此为限，例如支撑杆21可以采用陶瓷材质或其它绝缘材质制成。支撑杆21可以为两个且并列设置于炉管1内，支撑杆21的第一端211及第二端212分别与前法兰11及后法兰12固定连接，以避免炉管1直接承重，而是由前法兰11及后法兰12承重，可以防止支撑机构2及两个晶舟对炉管1造成损坏，从而可以有效提高安全性及稳定性，并且还能有效降低炉管1的故障率，进而降低维护及应用成本。由于采用支撑杆21对第一晶舟101及第二晶舟102进行承载，使得悬臂桨将两个晶舟送进炉管1后下落，由支撑杆21对两个晶舟进行支撑后，悬臂桨退出炉管1后由前炉门将炉管1密封后执行工艺，即本申请实施例可以避免现有技术中采用悬臂式结构带来的各种弊端。两个第一电极机构3分别对应的设置于两个支撑杆21上，第一电极机构3套设于第一端211上，并且与前法兰11连接，即第一电极机构3可以靠近炉管1的炉口设置。两个第一电极结构3用于承载第一晶舟101的前端两侧，并且分别与第一晶舟101的前端的两个端子电连接；第一晶舟101的后端则可以承载于支撑杆21上，即第一电极机构3与支撑杆21配合承载第一晶舟101。两个第一电极机构3的其中一个可以是正极，而另外一个则可以是负极，但是本申请实施例并不以此为限，例如，第一电极机构3还可以成对设置，且设置多对，每对中两个第一电极结构3分别为正极和负极，在此基础上，支撑杆21也成对设置，且对数与第一电极机构3的对数相同，并一一对应地设置，多对支撑杆21可用于共同支撑第一晶舟101和第二晶舟102；多对第一电极结构3用于共同将电极引入第一晶舟101。采用上述设计不仅避免第一晶舟101采用悬臂桨承载带来的缺点，而且在第一晶舟101的前端引入电极，使得本申请实施例结构简单，并且还能减少空间占用。两个第二电极机构4均设置于炉管1的炉尾处，即两个第二电极机构4均靠近支撑杆21的第二端212设置,两个第二电极机构4与第二晶舟102(即，分别与第二晶舟102的 两个端子，即后舟脚)电连接，以将电极引入第二晶舟102。两个第二电极机构4的其中一个可以是正极，而另外一个则可以是负极，但是本申请实施例并不以此为限，与第一电极结构3相类似的，第二电极机构4也可以成对设置，且对数与支撑杆21的对数相同，并一一对应地设置。多对第二电极机构4用于共同将电极引入第二晶舟102。
本申请实施例通过在炉管内设置有支撑机构，并且在支撑杆的第一端设置有第一电极机构，以及在炉管的炉尾处设置第二电极机构。通过第一电极机构与支撑杆配合支撑第一晶舟，以及第一电极机构将电极引入第一晶舟；通过支撑杆对第二晶舟进行支撑，以及第二电极机构将电极引入第二晶舟，避免第一电极结构随悬臂桨及前炉门运动，从而不仅使得第一电极机构结构简单，而且还能大幅减小空间占用。此外，由于采用支撑杆及第一电极机构配合承载第一晶舟，可以避免现有技术中采用悬臂式结构所带来的各种弊端，从而优化半导体工艺设备的性能。
于本申请的一实施例中，如图1至图4所示，第一电极机构3包括有电极支撑组件32及电极引入组件33，电极支撑组件32套设于对应的支撑杆21的第一端211，并在第一晶舟101装载于支撑杆21上时，承载第一晶舟101前端，且与第一晶舟101前端的对应的端子电连接。电极引入组件33穿设于前法兰11上，电极引入组件33的一端与电极支撑组件32电连接，电极引入组件33的另一端用于与射频电源电连接。
具体地，每个第一电极机构3均包括有电极支撑组件32及电极引入组件33，其中电极支撑组件32整体为套筒结构，其可以套设于对应的支撑杆21的第一端211上，并在第一晶舟101装载于支撑杆21上时，承载第一晶舟101前端，且与第一晶舟101前端的对应的端子电连接。由于电极支撑组件32套设(例如同心套设)于支撑杆21上，还能大幅节省空间占用。电极引入组件33整体可以采用杆状结构，以穿设于前法兰11上并且伸入前法兰 11内，使得电极引入组件33的一端与电极支撑组件32电连接，另一端用于与射频电源电连接，以用于将电极引入到电极支撑组件32上，进而引入至第一晶舟101上。采用上述设计，由于将电极支撑组件32及电极引入组件33均设置于前法兰11上，使得第一电极机构3整体位置距离炉口较近，以便于进行拆装维护，从而大幅提高拆装维护效率。
于本申请的一实施例中，如图1至图4所示，支撑机构2还包括有多个承载块22，多个承载块22设置于前法兰11及后法兰12上，支撑杆21的第一端211及第二端212均通过至少一个承载块22分别与前法兰11及后法兰12固定连接。电极支撑组件32与承载块22卡接或插接，且二者之间电绝缘。通过将电极支撑组件32与承载块22卡接或插接，可以避免电极支撑组件32在承载第一晶舟101时发生转动，确保第一晶舟101的端子(即，前舟脚)接触位置水平不旋转，减少接触不良发生概率，从而提高本申请实施例的稳定性。
如图1至图4所示，承载块22的底面可以呈圆弧面结构，用于与前法兰11及后法兰12的内圆弧配合设置，承载块22的顶部用于固定支撑杆21的第一端211或第二端212。具体来说，四个承载块22中，其中两个分别位于两个支撑杆21的第一端211，另两个分别位于两个支撑杆21的第二端212，并且每个承载块22的底部与前法兰11或后法兰12的内弧面贴合设置，以用于固定对应的支撑杆21。可选地，承载块22上开设有多个沿炉体1的圆周方向设置的长圆形通孔，多个紧固件穿过该长圆形通孔后与前法兰11或后法兰12连接，并且由于长圆形通孔的作用，使得两个支撑杆21之间在炉体1的圆周方向上的间距可以自由调整，从而使得本申请实施例可以适用不同宽度的晶舟，以提高适用性及适用范围；并且由于两个支撑杆21的间距可调节，能避免现场机台装配误差引起的干涉。并且，电极支撑组件32的端部可以与承载块22的两侧卡接或插接，以避免电极支撑组件32在承载第一晶舟101 时发生转动，确保第一晶舟101的前舟脚接触位置水平不旋转，减少接触不良发生概率，从而提高本申请实施例的稳定性。
于本申请的一实施例中，如图1至图5所示，电极支撑组件32包括支撑管3211、连接杆3212、连接部件3213、绝缘部件及转接块323，支撑管3211套设于支撑杆21的外周；转接块323可拆卸的连接于支撑管3211上，用于承载第一晶舟101前端，且与第一晶舟101前端对应的端子电连接；连接杆3212的一端与支撑管3211固定连接，且电导通，连接杆3212的另一端与连接部件3213固定连接，且电导通；并且连接杆3212沿支撑杆21的延伸方向设置；连接部件3213与承载块22卡接或插接，连接部件3213用于与电极引入组件33电连接；绝缘部件设置于连接部件3213与承载块22之间，用于将二者电绝缘。
如图1至图5所示，支撑管3211具有两个圆环及一个圆管同轴排列成套筒结构，并且在该套筒结构的两侧分别设置有两个连接杆3212以实现支撑管3211与连接部件3213的固定连接，支撑管3211整体可以套设于支撑杆21的第一端211上，采用该设计不仅能使结构简单，而且还能降低电极支撑组件32与支撑杆21之间的接触面积。连接杆3212的一端与支撑管3211固定连接，例如与支撑管3122的圆管固定连接，另一端与连接部件3213固定连接。连接部件3213例如与承载块22的两侧卡合固定，或者也可以采用诸如插接等的其他可拆卸连接的方式，本发明实施例对此没有特别的限制，连接部件3213用于与电极引入组件33电连接，并且连接部件3213与承载块22之间可以设置有绝缘部件，用于将二者电绝缘，以避免电极引入组件33及电极支撑组件32与支撑杆21之间发生短路。此外，绝缘部件还能起到防止支撑管3211旋转的作用，从而提高对第一晶舟101承载的稳定性。转接块323的顶面用于承载第一晶舟101的端子(即，前舟脚)，而转接块323的底部可以设有半圆柱形凹槽，以用于与支撑管3211的外周可拆卸地配合，例 如转接块323可以与支撑管3211的圆管外周可拆卸地定位连接。在实际应用时，转接块323部分位于支撑管3211的上方，部分位于支撑管3211的外侧，两个支撑管3211上的两个转接块323相互配合以用于支撑第一晶舟101的两个端子(即，前舟脚)。采用上述设计，由于转接块323与支撑管3211之间采用可拆卸连接，使得转接块323在需要进行维护时，便于直接与支撑管3211脱离，以对转接块323进行打磨镀膜层，从而大幅提高拆装维护效率，以进一步降低应用及维护成本。
需要说明的是，本申请实施例并不限定电极支撑组件32的具体结构，例如电极支撑组件32采用一体成型结构。因此本申请实施例对此并不进行限定，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1、图3及图5所示，电极支撑组件32还包括有定位端板324及定位件325，定位端板324设置于支撑管3122的外周壁上，定位件325用于将转接块323与定位端板324定位连接。可选地，转接块323上设置有夹持结构3232，用于与夹持工具配合夹持，以使转接块323能在夹持工具的作用下与定位件325分离，并且传出炉管1。
如图1、图3及图5所示，定位端板324整体可以为“L”形结构，并且定位端板324的横板位于支撑管3211的底部，竖板上可以开设有弧形缺口，以与支撑管3211的外周壁配合且固定连接。定位件325设置于定位端板324的竖板上，并且定位件325轴向与支撑管3211的轴向平行设置。转接块323上可以贯穿有定位孔3231，转接块323可以沿支撑管3211的轴向移动，此时定位件325伸入定位孔3231内，以及转接块323的侧面与定位端板324侧面贴合时停止移动，从而完成转接块323与支撑管3211定位连接，并且由于采用上述结构还使得转接块323易于拆卸，从而进一提高拆装维护效率。夹持结构3232例如为转接块323上贯穿的通孔，以用于与夹持工具配合夹持，即当需要对转接块323进行维护时，夹持工具可以伸入该夹持结构3232内， 以便于将转接块323传输至炉管1外侧，从而大幅提高拆装维护效率；并且还能避免转接块323掉落造成炉管1损坏，从而提高本申请实施例的安全性。
需要说明的是，本申请实施例并不限定转接块323与支撑管3211之间定位方式，例如支撑管3211外周设置有多个定位件325，转接块323与支撑管3211配合的侧面上设置有多个对应设置的定位孔3231。因此本申请实施例对此并不进行限定，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图3及图4所示，连接部件3213包括承载板3214和连接板3215，承载板3214的一端与连接杆3212固定连接，且电导通；连接板3215为具有呈夹角的两个弯折部的折弯结构，其中一个折弯部与绝缘部件贴合设置，并与承载板3214的另一端固定连接，且电导通；另一个弯折部与电极引入组件33固定连接，且导通；绝缘部件上设置有用于支撑承载板3214的台阶。
如图3及图4所示，连接部件3213包括两相对设置的承载板3214，两个承载板3214分别位于承载块22的两侧设置，并且两个承载板3214均通过端板与支撑杆3212的端部连接，并且各部件之间可以采用焊接方式固定连接。采用该设计使得本申请实施例结构简单易于实现，并且还能进一步提高本申请实施例的稳定性。连接板3215可以为“L”形结构，其中连接板3215的竖板可以贴合于承载板3214上，并且部分贴合于绝缘部件设置，连接板3215的横板可以用于与电极引入组件33连接，即连接板3215可以为折弯结构，其一折弯部与承载板3214固定连接，且电导通；并且另一弯折部与绝缘部件贴合设置，并与电极引入组件33固定连接，且导通。绝缘部件可以包括有三个绝缘板322，其中两个绝缘板322板分别设置于承载块22的两侧，并且位于连接部件3213的两个承载板3214与承载块22之间，以防止连接部件3213与承载块22之间发生短路。进一步的，两个绝缘板322的相背离的一侧面上开设有台阶面，以用于容置承载板3214，并与之卡接或插接，以对连 接部件3213进行限位，从而进一步提高支撑管3211的稳定性避免发生旋转，但是本申请实施例并不以此为限。另外一个绝缘板322可以设置于承载块22外侧，即该绝缘板322设置于承载块22远离支撑杆21的一侧面上，当实际应用时能防止承载块22及连接部件3213与前炉门之间产生放电打火现象，从而进一步提高本申请实施例的安全性及稳定性。各绝缘板322与承载块22之间可以螺栓连接方式，但是本申请实施例并不以此为限。
需要说明的是，本申请实施例并不限定绝缘部件的具体结构，例如绝缘部件还可以采用一整体结构，即三个绝缘板322一体成形设置。因此本申请实施例对此并不进行限定，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1、图4及图7所示，前法兰11的周壁上设置有贯通前法兰11的连通管(图中未示出)；电极引入组件33包括有引入杆331、绝缘套332及插座333，绝缘套332套设于引入杆331的外周，且穿设于连通管内，引入杆331的一端与电极支撑组件32电连接，引入杆331的另一端与插座333电连接；绝缘套332朝向插座33的端部外周设置有密封凸台3321，用于与连通管的端部密封连接；插座333套设于连通管的端部外周，用于将密封凸台3321压紧于连通管的端部上。
如图1、图4及图7所示，连通管的一端与前法兰11的外周壁连接，另一端例如设置有外螺纹，并且连通管整体沿前法兰11的径向延伸设置，连接管用于连通前法兰11的内外。引入杆331的外周包覆有绝缘套332，以使引入杆331可以嵌套于连通管内，以及通过绝缘套332与连通管及前法兰11之间实现绝缘。引入杆331位于前法兰11内的一端与电极支撑组件32电连接，例如通过连接板3215及紧固件334与电极支撑组件32电连接，但是本申请实施例并不以此为限。引入杆331位于前法兰11外的一端通过插座333与射频电源电连接。进一步的，绝缘套332位于前法兰11外的一端设置密封凸台3321，即绝缘套332朝向插座333的端部外周设置有密封凸台3321，该 密封凸台3321压抵于连通管的端面上，并且两者之间设置柔性密封圈(图中未示出)，以实现绝缘套332与前法兰11之间的密封。插座333可以采用同轴电缆插座，插座333通过旋紧螺母与连通管的端部的外螺纹配合连接，在实现与引入杆331连接的同时，还能将密封凸台3321及柔性密封件压紧于连通管的端面上，从而实现电极引入组件33与前法兰11之间密封连接。采用上述设计，使得电极引入组件33的结构简单易于实现，并且由于插座333采用螺接方式与连通管连接，使得本申请实施例仅通手工操作即可以实现拆装维护，从而大幅提高拆装维护效率。但是本申请实施例并不限定电极引入组件33的具体结构，只要其能够实现与前法兰11密封的同时，将电极引入电极支撑组件32即可。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1至图4所示，支撑机构2还包括有压紧件23，承载块22上开设限位槽221，用于容置支撑杆21的第一端211或第二端212，压紧件23设置于承载块22上，用于将第一端211或第二端212压紧于限位槽221内。具体来说，承载块22上开设有限位槽221，限位槽221为半圆柱形凹槽，用于容置支撑杆21的第一端211或第二端212，但是本申请实施例并不限定限位槽221的具体形状，只要其与支撑杆21的外形对应设置即可。压紧件23可以采用半弧形板状结构，当支撑杆21容置于限位槽221内时，压紧件23盖合于限位槽221上，并且通过多个螺栓与承载块22连接，例如限位槽221顶部开口两侧还开设有多个连接孔，用于与螺栓配合使得压紧件23将支撑杆21压紧于限位槽221内。采用上述设计，使得本申请实施例结构简单，并且还提高了稳定性及安全性，从而降低了故障率且延长使用寿命。需要说明的是，本申请实施例并非所有实施例中都必须包括有压紧件23，例如承载块22朝向支撑杆21的侧面上开设有容置槽，以用于容置支撑杆21及限定支撑杆21的位置。因此本申请实施例并不以此为限，本领域技 术人员可以根据实际情况自行调整设置。
于本申请的一实施例中，如图1、图2及图6所示，支撑机构2还包括有多个第一承载套24、多个第二承载套25和多个限位件26，第一承载套24设于支撑杆21与支撑管3211和连接杆3212之间，用于将支撑杆21与支撑管3211和连接杆3212隔离，多个第二承载套25套设于支撑杆21上，且分布于支撑杆21上用于支撑第一晶舟101的后端和第二晶舟102的前端和后端的位置处；多个限位件26固定设置于支撑杆21上，用于分别定位第一承载套24和第二承载套25。
可选地，支撑杆21为半导体材质，第一承载套24及第二承载套25均为绝缘材质。
如图1、图2及图6所示，支撑杆21具体可以采用高强度半导体材质制成，使得支撑杆21具有高硬度、高强度、耐高温及耐腐蚀等优异特性，从而提高支撑杆21的稳定性以及延长使用寿命。支撑杆21的第一端211及第二端212均通过承载块22与前法兰11及后法兰12连接，使得第一晶舟101及第二晶舟102均采用软着陆方式承载。两个第一承载套24分别设置于两个支撑杆21的第一端211上，并且长度延伸至第一晶舟101的端子(即，前舟脚)的位置处，以使第一电极结构3的支撑管3211套设于其上。第一承载套24例如采用陶瓷等绝缘材质制成，可以实现支撑管3211与支撑杆21之间绝缘，从而防止两者之间发生短路。但是需要说明的是，当支撑杆21采用绝缘材质时也可以不考虑第一承载套24的具体材质。两个第二承载套25设置于两个支撑杆21上，并且靠近两个支撑杆21的第二端212设置，用于相互配合支撑第二晶舟102的后舟脚。四个第二承载套25设置于两个支撑杆21上，并且靠近支撑杆21的中部位置，其中相对靠近第二端212的两个第二承载套25用于相互配合支撑第二晶舟102的前舟脚；以及靠近第一端211的两个第二承载套25与两个第一电极结构3相互配合，以用于承载第一晶舟101的前 舟脚和后舟脚。第二承载套25例如采用陶瓷等绝缘材质制成，可以实现第二晶舟102与支撑杆21之间绝缘，从而防止两者之间发生短路。但是需要说明的是，当支撑杆21采用绝缘材质时也可以不考虑第二承载套25的具体材质。限位件26例如采用具有一定弹性的金属材质制成，并且限位件26的具体结构可以环形结构，多个限位件26可以分别对应多个第一承载套24及第二承载套25对应设置，并且套设于支撑杆21上，限位件26可以将第一承载套24及第二承载套25固定限位，防止其沿支撑杆21轴向移动，同时第一承载套24及第二承载套25均可以相对支撑杆21灵活转动，使得第一晶舟101及第二晶舟102的舟脚更加容易滑入两个支撑杆21之间，从而提高传输晶舟的工作效率及稳定性。
于本申请的一实施例中，如图1及图2所示，两个第二电极机构4中，其中一者包括第一引入杆41，另一者包括第二引入杆42，第一引入杆41及第二引入杆42均设置于工艺腔室的后炉门上，用于与第二晶舟102的后端电连接，并且第一引入杆41及第二引入杆42的极性相反。
如图1及图2所示，第一引入杆41及第二引入杆42均采用后插式电极杆，并且均设置于工艺腔室的后炉门(图中未示出)上以用于与射频电源连接。第一引入杆41及第二引入杆42均用于与第二晶舟102上的电极插孔相连，以完成与第二晶舟102的电连接，并且由于第二晶舟102的两个电极插孔采用上下分布方式排列，因此第一引入杆41及第二引入杆42采用对应方式排列，即第一引入杆41及第二引入杆42采用上下分布方式。进一步的，第一引入杆可以为正极，而第二引入杆42则可以是负极，但是本申请实施例并不以此为限，第一引入杆41及第二引入杆42的位置和极性均可以互换。采用上述设计，由于采用插压方式连接，以使第二电极机构4与第二晶舟102之间实现软着陆电极连接方式，从而大幅提高工艺稳定性以及硅片的工艺良率。需要说明的是，本申请实施例并不限定第二电极机构4的具体实施方式， 例如第二电极机构4也可以采用与第一电极机构3相同结构来实现对第二晶舟102引入电极。因此本申请实施例并不以此为限，本领域技术人员可以根据实际情况自行调整设置。
基于同一发明构思，本申请实施例提供了一种半导体工艺设备，包括如上述各实施例提供的工艺腔室，其中工艺腔内的第一电极机构用于将电极引入第一晶舟，第二电极机构用于将电极引入第二晶舟。
应用本申请实施例，至少能够实现如下有益效果：
本申请实施例通过在炉管内设置有支撑机构，并且在支撑杆的第一端设置有第一电极机构，以及在炉管的炉尾处设置第二电极机构。通过第一电极机构与支撑杆配合支撑第一晶舟，以及第一电极机构将电极引入第一晶舟；通过支撑杆对第二晶舟进行支撑，以及第二电极机构将电极引入第二晶舟，避免第一电极结构随悬臂桨及前炉门运动，从而不仅使得第一电极机构结构简单，而且还能大幅减小空间占用。此外，由于采用支撑杆及第一电极机构配合承载第一晶舟，可以避免现有技术中采用悬臂式结构所带来的各种弊端，从而优化半导体工艺设备的性能。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。
在本申请的描述中，需要理解的是，术语“中心”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
以上所述仅是本申请的部分实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (12)

  1. 一种半导体工艺炉的工艺腔室，其特征在于，包括：炉管、前法兰、后法兰、支撑机构、第一电极机构及第二电极机构；
    所述前法兰和后法兰分别设置在所述炉管的炉口和炉尾处；
    所述支撑机构设置于所述炉管内，所述支撑机构包括有两个支撑杆，所述支撑杆的第一端与所述前法兰连接，所述支撑杆的第二端与所述后法兰连接，所述支撑杆用于承载第一晶舟及第二晶舟；
    所述第一电极机构为两个，且分别套设于两个所述支撑杆的所述第一端，并且两个所述第一电极结构的极性相反，用于在所述第一晶舟装载于所述支撑杆上时，承载所述第一晶舟前端，并且分别与所述第一晶舟前端的两个端子电连接，以将电极引入至所述第一晶舟；
    所述第二电极机构为两个，且均设置于所述炉管的所述炉尾处，用于在所述第二晶舟装载于所述支撑杆上时，将电极引入至所述第二晶舟。
  2. 如权利要求1所述的工艺腔室，其特征在于，每个所述第一电极机构均包括有电极支撑组件及电极引入组件，所述电极支撑组件套设于对应的所述支撑杆的所述第一端，并在所述第一晶舟装载于所述支撑杆上时，承载所述第一晶舟前端，且与所述第一晶舟前端的对应的所述端子电连接；
    所述电极引入组件穿设于所述前法兰上，所述电极引入组件的一端与所述电极支撑组件电连接，所述电极引入组件的另一端用于与射频电源电连接。
  3. 如权利要求2所述的工艺腔室，其特征在于，所述支撑机构还包括有多个承载块，多个所述承载块设置于所述前法兰和所述后法兰上，所述支撑杆的所述第一端及所述第二端均通过至少一个所述承载块分别与所述前法兰和所述后法兰固定连接；
    所述电极支撑组件与所述承载块卡接或插接，且二者之间电绝缘。
  4. 如权利要求3所述的工艺腔室，其特征在于，所述电极支撑组件包括有支撑管、连接杆、连接部件、绝缘部件及转接块，所述支撑管套设于所述支撑杆的外周；所述转接块可拆卸的连接于所述支撑管上，用于承载所述第一晶舟前端，且与所述第一晶舟前端对应的所述端子电连接；所述连接杆的一端与所述支撑管固定连接，且电导通，所述连接杆的另一端与所述连接部件固定连接，且电导通，并且所述连接杆沿所述支撑杆的延伸方向设置；所述连接部件与所述承载块卡接或插接，所述连接部件用于与所述电极引入组件电连接；所述绝缘部件设置于所述连接部件与所述承载块之间，用于将二者电绝缘。
  5. 如权利要求4所述的工艺腔室，其特征在于，所述电极支撑组件还包括有定位端板及定位件，所述定位端板设置于所述支撑管的外周壁上，所述定位件用于将所述转接块与所述定位端板定位连接。
  6. 如权利要求4所述的工艺腔室，其特征在于，所述连接部件包括承载板和连接板，所述承载板的一端与所述连接杆固定连接，且电导通；所述连接板为具有呈夹角的两个弯折部的折弯结构，其中一个所述折弯部与所述绝缘部件贴合设置，并与所述承载板的另一端固定连接，且电导通；另一个所述折弯部与所述电极引入组件固定连接，且电导通；所述绝缘部件上设置有用于支撑所述承载板的台阶。
  7. 如权利要求2所述的工艺腔室，其特征在于，所述前法兰的周壁上设置有贯通所述前法兰的连通管；所述电极引入组件包括有引入杆、绝缘套及插座，所述绝缘套套设于所述引入杆的外周，且穿设于所述连通管内，所述引入杆的一端与所述电极支撑组件电连接，所述引入杆的另一端与所述插 座电连接；所述绝缘套朝向所述插座的端部外周设置有密封凸台，用于与所述连通管的端部密封连接；所述插座套设于所述连通管的端部外周，用于将所述密封凸台压紧于所述连通管的端部上。
  8. 如权利要求3所述的工艺腔室，其特征在于，所述支撑机构还包括有压紧件，所述承载块上开设限位槽，用于容置所述支撑杆的所述第一端或所述第二端，所述压紧件设置于所述承载块上，用于将所述第一端或所述第二端压紧于所述限位槽内。
  9. 如权利要求4所述的工艺腔室，其特征在于，所述支撑机构还包括有多个第一承载套、多个第二承载套和多个限位件，所述第一承载套设于所述支撑杆与所述支撑管和所述连接杆之间，用于将所述支撑杆与所述支撑管和所述连接杆隔离；多个所述第二承载套套设于所述支撑杆上，且分布于所述支撑杆上用于支撑所述第一晶舟的后端和所述第二晶舟的前端和后端的位置处；多个所述限位件固定设置于所述支撑杆上，用于分别定位所述第一承载套和所述第二承载套。
  10. 如权利要求9所述的工艺腔室，其特征在于，所述支撑杆为半导体材质，所述第一承载套及所述第二承载套均为绝缘材质。
  11. 如权利要求1所述的工艺腔室，其特征在于，其中一个所述第二电极机构包括第一引入杆，另一个所述第二电极机构包括第二引入杆，所述第一引入杆及所述第二引入杆均设置于所述工艺腔室的后炉门上，用于与所述第二晶舟的后端电连接，并且所述第一引入杆及所述第二引入杆的极性相反。
  12. 一种半导体工艺炉，其特征在于，包括如权利要求1-11中的任一项 所述的工艺腔室。
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