WO2023138225A1 - 进气装置及cvd设备 - Google Patents

进气装置及cvd设备 Download PDF

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Publication number
WO2023138225A1
WO2023138225A1 PCT/CN2022/135962 CN2022135962W WO2023138225A1 WO 2023138225 A1 WO2023138225 A1 WO 2023138225A1 CN 2022135962 W CN2022135962 W CN 2022135962W WO 2023138225 A1 WO2023138225 A1 WO 2023138225A1
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WIPO (PCT)
Prior art keywords
air
gas
air intake
chamber
porous
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PCT/CN2022/135962
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English (en)
French (fr)
Inventor
肖蕴章
黄帅帅
经军辉
陈炳安
钟国仿
Original Assignee
深圳市纳设智能装备有限公司
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Publication of WO2023138225A1 publication Critical patent/WO2023138225A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present application relates to the technical field of CVD equipment, in particular to an air intake device and CVD equipment.
  • the wafer epitaxy process is an indispensable link in the preparation of compound semiconductor devices.
  • the specific method is to use CVD (Chemical Vapor Deposition, chemical vapor deposition) to deposit a film with excellent performance and fewer defects on the surface of a specific semiconductor wafer. This film is called an epitaxial layer.
  • the quality of this epitaxial layer has a great influence on the performance of semiconductor devices fabricated from the wafer.
  • the uniformity of reaction gas flow also has a great influence on the performance and quality of deposited thin films.
  • the reaction gas has a relatively high initial velocity when it enters the intake chamber from the intake pipe, and it is easy to form a more obvious vortex in the intake chamber.
  • the first way is to design the gas inlet chamber to be longer so that the reactant gas can be in a state of uniform flow when it reaches the surface of the wafer.
  • the second method is to use pneumatic or other transmission methods to keep the wafer in a rotating state.
  • the purpose of this application is to provide an air intake device and CVD equipment to solve the deficiencies in the related art.
  • the present application provides an air intake device, which is applied to CVD equipment, and the air intake device includes an air intake chamber body, a mounting seat, a porous air-permeable member and a windshield.
  • the mounting seat is arranged on the air intake chamber body, the porous gas permeable member is disposed between the mounting seat and the air intake chamber body, and at least three airflow adjustment cavities are formed between the porous air permeable member and the installation seat, and the mounting base is respectively provided with an air inlet interface corresponding to the at least three airflow adjustment cavities, and the air intake interface is used to introduce reaction gas into the corresponding air flow adjustment chamber, and the air intake chamber body is respectively provided with an air guide chamber corresponding to the at least three air flow adjustment cavities.
  • each of the airflow adjustment chambers is provided with the windshield corresponding to the air intake interface, and the windshield is located between the porous air-permeable member and the mounting seat.
  • the number of the airflow regulating chambers is three, and the corresponding air guiding chambers are provided with three, and the three air guiding chambers are respectively the first air guiding chamber and the second air guiding chambers located on both sides of the first air guiding chamber.
  • the width of the first air guiding chamber is larger than the width of the second air guiding chamber.
  • the porous air-permeable member has a group of fine holes communicating the airflow adjustment chamber and the air guiding chamber.
  • the small hole group includes a plurality of small holes, and the diameter of the small holes is inversely proportional to the number.
  • the diameter of the tiny hole is 0.3mm-1mm.
  • the porous air-permeable member is a porous air-permeable plate.
  • the wind deflector is disposed on the mounting base or the porous air-permeable element, and a spherical section surface is provided on a side of the wind deflector close to the air inlet port.
  • a flow regulator and/or a mass flow meter is provided at the inlet port.
  • the intake chamber body is made of high-purity quartz or stainless steel.
  • a sealing member is used to achieve a sealed fit between the installation seat and the air intake chamber body.
  • the air intake chamber body includes a mounting part and an air chamber part, the mounting seat is disposed on the mounting part, and a detachable connection between the mounting seat and the mounting part is achieved through a fastening assembly.
  • the present application also provides a CVD equipment, which is applied to the processing of wafer epitaxial layers, and the CVD equipment includes the gas inlet device as provided in the first aspect above.
  • the air outlet sides of the air guide chambers all face the outer peripheral surface of the wafer, and the air guide chamber located in the middle of the inlet chamber body corresponds to the wafer, and has a width greater than or equal to the diameter of the wafer.
  • the application provides an air inlet device and CVD equipment.
  • the air inlet device introduces the reaction gas of the CVD equipment through the air inlet port to the corresponding air flow adjustment chamber.
  • the reaction gas flows toward the windshield at a higher flow rate, and the windshield will prevent the reaction gas from directly flowing to the porous air-permeable part, thereby consuming the airflow velocity of the reaction gas, so that the flow rate of the reaction gas after entering the airflow adjustment chamber is reduced and dispersed. It can quickly reach a state of uniform flow when the chamber is installed, and there is no need to design a long intake structure.
  • the gas inlet device is applied to CVD equipment, which can make the epitaxial layer with uniform thickness and uniform doping concentration on the wafer, and at the same time reduce the length of CVD equipment, reduce the floor area, reduce the loss of materials, and greatly reduce the equipment cost.
  • the reactant gas flows through at least three air guiding chambers in the main body of the air intake chamber to realize partition flow, and the air guiding chambers correspond to the air flow regulating chambers, so that the flow rate of the reaction gas in different air guiding chambers in the main body of the air intake chamber can be precisely controlled.
  • Applied in CVD equipment in order to improve the thickness uniformity and performance of deposited epitaxial layer when CVD equipment processes wafers.
  • the air flow entering the air guide chamber can be effectively converted from turbulent flow to laminar flow through the air flow adjustment chamber, thereby ensuring the stability of the air flow on the surface of the wafer substrate, and achieving the purpose of reducing the non-uniformity of film thickness on the surface of the wafer, reducing the non-uniformity of doping, and reducing the density of surface defects.
  • the gas inlet device due to the improvement of the stability of the reaction gas entering the gas guide chamber, it can be adapted to the processing of larger-sized wafers.
  • the pressure loss at the front and rear ends of the intake chamber body can be effectively increased through the function of the windshield and the porous air-permeable parts in the airflow adjustment chamber, so that the reaction gas can be fully mixed at the front end of the intake chamber body, thereby ensuring that the reaction gas has a more stable concentration uniformity after entering the intake chamber body.
  • Fig. 1 shows a schematic perspective view of the three-dimensional structure of an air intake device provided by an embodiment of the present application.
  • FIG. 2 shows an exploded schematic diagram of the air intake device shown in FIG. 1 .
  • Fig. 3 is a schematic perspective view of the three-dimensional structure of the mounting seat in the air intake device shown in Fig. 2 .
  • Fig. 4 shows a front view of the air intake device shown in Fig. 1 .
  • Fig. 5 shows a left side view of the air intake device shown in Fig. 4 .
  • Fig. 6 shows the velocity streamline diagram of the flow field obtained by the fluid simulation of the embodiment of the present application without the porous gas permeable element and the windshield (a) and the air inlet device with the porous gas permeable element and the windshield (b).
  • Figure 7 shows a data map of the thickness and doping concentration of the epitaxial layer at 17 points of the wafer (a) processed without using the gas inlet device provided by the embodiment of the present application and the wafer (b) obtained by processing the gas inlet device provided by the embodiment of the present application.
  • orientations or positional relationships indicated by the terms “center”, “longitudinal”, “transverse”, “length”, “width”, “thickness”, “upper”, “lower”, “front”, “rear”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inner”, “outer”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential” are based on the drawings.
  • the orientation or positional relationship is only for the convenience of describing the present application and simplifying the description, but does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be construed as a limitation of the present application.
  • first and second are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • “plurality” means two or more, unless otherwise specifically defined.
  • connection In this application, unless otherwise clearly specified and limited, the terms “installation”, “connection”, “connection”, “fixation” and other terms should be understood in a broad sense, for example, it may be a fixed connection, or a detachable connection, or integrated; it may be a mechanical connection, or an electrical connection; it may be a direct connection, or an indirect connection through an intermediate medium, or an internal communication between two components or an interaction relationship between two components. Those of ordinary skill in the art can understand the specific meanings of the above terms in this application according to specific situations.
  • a first feature being "on” or “under” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediary.
  • “above”, “above” and “above” the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature.
  • “Below”, “beneath” and “beneath” the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
  • this embodiment provides an air intake device, which is applied to CVD equipment, and the CVD equipment is used for epitaxial layer processing of wafers.
  • the air intake device provided in this embodiment includes an air intake chamber body 100 , a mounting seat 200 and a porous air-permeable member 300 .
  • the mounting seat 200 is disposed on the air intake chamber body 100
  • the porous air-permeable element 300 is disposed between the mounting seat 200 and the air intake chamber body 100 .
  • the intake chamber body 100 includes a mounting portion 110 and an air chamber portion 120
  • the mounting seat 200 is disposed on the mounting portion 110 of the intake chamber body 100
  • the mounting seat 200 and the mounting portion 110 are detachably connected.
  • a first sealing member 500 is provided between the mounting base 200 and the mounting portion 110 , the first sealing member 500 can form a sealing fit between the mounting base 200 and the mounting portion 110 to avoid gas leakage.
  • the first sealing member 500 may be a sealing ring or a rubber gasket.
  • the mounting base 200 and the mounting portion 110 are connected by fastening components 600 , there are at least two fastening components 600 , and these fastening components 600 are evenly distributed along the periphery of the mounting base 200 .
  • fastening assembly 600 is a bolt.
  • the fastening assembly 600 includes a collet, a connecting rod, a washer, a spring, and an adjusting nut.
  • the connecting rod is disposed through the mounting seat 200
  • the collet is disposed at one end of the connecting rod, and the collet abuts against the side of the mounting part 110 away from the mounting seat 200 .
  • the washer and the spring are sheathed on the connecting rod in turn, and both the washer and the spring are located on a side of the mounting seat 200 away from the mounting portion 110 , and the washer abuts against the mounting seat 200 .
  • the adjusting nut and the connecting rod are threadedly matched, and the adjusting nut is located at the end of the spring away from the mounting base 200, thus, the spring is located between the adjusting nut and the washer, and the spring is clamped by the adjusting nut and the washer.
  • the spring When the fastening assembly 600 presses the mounting base 200 and the mounting portion 110 tightly, the spring is in a compressed state at this time, and the spring will give a certain thrust to the adjusting nut and the washer in order to restore the deformation, and the adjusting nut will act on the thrust to the mounting portion 110 through the collet, so that the collet and the washer work together to clamp the mounting seat 200 and the mounting portion 110.
  • the pressing force can be adjusted by turning the adjusting nut.
  • the porous air-permeable member 300 is located between the installation seat 200 and the installation part 110, in this embodiment, the porous air-permeable member 300 is installed on the side of the installation seat 200 close to the installation part 110, and the porous air-permeable member 300 and the installation seat 200 are connected by screws.
  • the mounting seat 200 is provided with at least three grooves 220 on the side close to the porous air-permeable part 300. Since the porous air-permeable part 300 is located on the open side of the groove 220, at least three airflow adjustment cavities 221 are formed between the mounting seat 200 and the porous air-permeable part 300 corresponding to the groove 220.
  • the side of the mounting seat 200 away from the porous air-permeable part 300 is provided with an air inlet port 210 corresponding to each airflow adjustment chamber 221. reactive gas.
  • a second sealing member is provided between the mounting seat 200 and the porous air-permeable member 300, and the second sealing member is used to form a seal at the place where the mounting seat 200 and the porous air-permeable member 300 are in contact, so that the two adjacent airflow adjustment chambers 221 are relatively sealed, thereby avoiding air leakage between the two adjacent airflow adjustment chambers 221, so that each airflow adjustment chamber 221 is relatively independent.
  • the number of grooves 220 on the mounting base 200 can be set to three, four, five or more than five. In order to describe the technical solution of the present application more clearly, in this embodiment, three grooves 220 are provided on the mounting base 200 for illustration.
  • the air chamber portion 120 of the air intake chamber body 100 is correspondingly provided with three air guide chambers 130 , wherein the three air guide chambers 130 are respectively provided in one-to-one correspondence with the three airflow adjustment chambers 221 .
  • the air intake sides of the three gas guide chambers 130 communicate with the corresponding airflow adjustment chambers 221, and the gas outlet sides of the three air guide chambers 130 face the outer peripheral surface of the wafer to be processed in the CVD equipment.
  • the porous air-permeable member 300 has a group of small holes 310 communicating with the airflow regulating chamber 221 and the air guide chamber 130, wherein the group of small holes 310 corresponding to each airflow regulating chamber 221 includes a plurality of small holes 311, and the plurality of small holes 311 are evenly distributed in the area corresponding to the porous air-permeable member 300 and the airflow regulating chamber 221.
  • the air intake device further includes a plurality of windshields 400, wherein each airflow adjustment chamber 221 is provided with a windshield 400, the windshield 400 is located between the porous air-permeable member 300 and the mounting seat 200, and the windshield 400 corresponds to the air inlet port 210, so that the flow rate of the reaction gas is consumed at the windshield 400 first, so that the reaction gas diffuses in the airflow adjustment chamber 221, and then enters the gas guide chamber 13 along the small hole 311 0 in.
  • the setting of the porous air-permeable member 300 can increase the pressure difference between the airflow regulating chamber 221 and the gas-guiding chamber 130 of the reaction gas before and after the porous air-permeable member 300, so that the reactant gas can quickly reach a uniform flow state when it flows out from the porous air-permeable member 300, thus, the reaction gas entering the gas-guiding chamber 130 can quickly reach a uniform flow state, and then the design length of the gas chamber part 120 can be shortened.
  • FIG. 6 shows the velocity streamline diagram of the flow field obtained by the fluid simulation. It can be seen from the figure that the windshield 400 and the porous air-permeable member 300 are added, and the streamline has reached a very uniform state in a very short path after the reactant gas flows through the porous air-permeable member 300 , and the velocity distribution is also more uniform.
  • FIG. 7 shows a data map of the thickness and doping concentration of the epitaxial layer measured at 17 points for a wafer processed without using the gas inlet device provided by the embodiment of the present application and a wafer processed with the gas inlet device provided by the embodiment of the present application.
  • the abscissa in the figure represents 17 measurement points
  • the ordinate on the left is the thickness (in microns), represented by square points and connected lines in the figure
  • the doping concentration of nitrogen element is represented by the ordinate on the right, represented by dots and connected lines in the figure. It can be seen from FIG.
  • the aperture of the small holes 311 is inversely proportional to the number, that is, the total area of the small holes 311 is kept close to a fixed value.
  • the windshield 400 is disposed on the porous air-permeable element 300 , or disposed on the mounting base 200 .
  • the side of the windshield 400 close to the inlet port 210 is provided with a spherical surface, which is more conducive to the diffusion of the reaction gas.
  • the porous air-permeable member 300 is a porous air-permeable plate.
  • the porous gas permeable member 300 can also be compressed or cast from other types of materials, such as three-dimensional porous materials, such as foam boards.
  • the aperture selection design range of the small hole 311 is 0.3mm-1mm. In order to ensure that the pressure difference range between the front and back of the porous air-permeable element 300 is between 300 mbar and 30 mbar, so that the reactant gas can reach a state of uniform flow faster when flowing out of the porous air-permeable element 300 .
  • the diameter of the small hole 311 is designed in a range of 0.3mm-0.85mm.
  • the diameter of the small hole 311 is designed in a range of 0.3mm-0.65mm.
  • the diameter of the small hole 311 can be selected to be 0.32mm, 0.35mm, 0.38mm, 0.4mm, 0.43mm, 0.45mm, 0.47mm, 0.49mm, 0.51mm, 0.54mm, 0.58mm, 0.6mm, 0.62mm or 0.64mm. It should be understood that, the above are only examples, and are not intended to limit the protection scope of the present application.
  • the three air guide chambers 130 in the air chamber part 120 are located in the same plane.
  • the three air guiding chambers 130 are the first air guiding chamber 131 and the second air guiding chamber 132 located on both sides of the first air guiding chamber 131 , and the width of the first air guiding chamber 131 is greater than that of the second air guiding chambers 132 on both sides.
  • the first gas guiding chamber 131 corresponds to the wafer to be processed, and the width of the first gas guiding chamber 131 is greater than or equal to the diameter of the wafer.
  • the gas chamber part 120 is set to at least three gas guide chambers 130, thereby forming multiple partitions. And the process parameters can be adjusted better.
  • the width of the second gas guiding chamber 132 on both sides is set relatively narrow to adjust the flow velocity and flow rate of the boundary layer on the side wall of the reaction chamber. Therefore, setting at least three air guide chambers 130 can realize the adjustment of flow rate and speed flowing through the middle and both sides of the wafer, and is beneficial to obtain a more uniform film.
  • the air intake of the three air guide chambers 130 is for a small-sized wafer (such as a 4" wafer).
  • the width of the middle air intake has a great influence on the thickness of the deposited film and the uniformity of doping concentration.
  • the width is greater than the diameter of the 4" wafer, the quality of the deposited film on the wafer is higher, and the change of the flow rate in the edge air intake area has basically no effect on the quality of the deposited film. Therefore, when three air guiding chambers 130 are provided, it is required to be wide in the middle and narrow in both sides.
  • a flow regulator and a mass flow meter can be provided at each inlet port 210 to independently adjust and monitor the flow rate of the reaction gas entering each gas flow adjustment cavity 221 .
  • the intake chamber body 100 is made of high-purity quartz, stainless steel or other high-temperature-resistant metal materials.
  • the intake chamber body 100 is welded from a plurality of high-purity quartz plates and quartz seats, and a partition is formed between two adjacent air guide chambers 130, wherein the length of the partition is consistent with the length of the intake chamber after welding to ensure that there is no air leakage in the intake chamber body 100.
  • This embodiment also provides a CVD equipment used for processing the epitaxial layer of a wafer, wherein the CVD equipment includes the gas inlet device provided above.
  • the air intake device introduces the reaction gas of the CVD equipment through the air inlet port 210 to the corresponding airflow adjustment chamber 221.
  • the reaction gas flows toward the windshield 400 at a higher flow rate, and the windshield 400 will prevent the reaction gas from directly flowing to the porous vent 300, thereby consuming the flow velocity of the reaction gas, so that the flow velocity of the reaction gas after entering the airflow adjustment chamber 221 is reduced and dispersed.
  • the gas inlet device is applied to CVD equipment, which can generate epitaxial layers with uniform thickness and doping concentration on the wafer, while reducing the length of CVD equipment, reducing floor space, reducing material loss, and greatly reducing equipment costs.
  • the air intake device provided by the present application also has the following advantages:
  • the reactant gas flows through at least three gas guide chambers 130 in the intake chamber body 100 to realize partitioned flow, and the gas guide chambers 130 correspond to the airflow regulating chamber 221, so that the precise control of the flow rate of the reaction gas in different gas guide chambers 130 in the intake chamber body 100 can be realized.
  • Applied in CVD equipment in order to improve the thickness uniformity and performance of deposited epitaxial layer when CVD equipment processes wafers.
  • the airflow entering the gas guide chamber 130 can be effectively converted from turbulent flow to laminar flow through the airflow adjustment chamber 221, thereby ensuring the stability of the airflow on the surface of the wafer substrate, achieving the purpose of reducing the unevenness of the film thickness on the surface of the wafer, reducing the unevenness of doping, and reducing the density of surface defects.

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  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
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  • Chemical Vapour Deposition (AREA)

Abstract

本申请提供了一种进气装置及CVD设备，涉及CVD设备技术领域。进气装置包括进气室本体、安装座、多孔透气件及挡风板；安装座设置于进气室本体，多孔透气件设置于安装座与进气室本体之间，且多孔透气件与安装座之间形成至少三个气流调节腔，安装座上对应气流调节腔设有进气接口，进气接口用于向对应的气流调节腔导入反应气体，进气室本体远离进气接口的一侧对应气流调节腔设有导气室；每个气流调节腔内均设有与进气接口对应的挡风板，挡风板位于多孔透气件与安装座之间。本申请提供的进气装置使反应气体进入导气室时能够很快的达到均匀流动的状态，以使晶圆生成厚度均匀、掺杂浓度均匀的外延层，无需设计较长的进气结构，降低成本。

Description

进气装置及CVD设备 技术领域
本申请涉及CVD设备技术领域，尤其涉及一种进气装置及CVD设备。
发明背景
晶圆的外延过程是制备化合物半导体器件不可或缺的环节，具体方式是利用CVD(Chemical Vapor Deposition，化学气相沉积)的方式在特定的半导体晶圆的表面沉积一层性能优异、缺陷较少的薄膜，该薄膜被称为外延层。该外延层的质量对晶圆制备的半导体器件的性能有很大的影响。
在利用化学气相沉积(CVD)的方式制备薄膜的过程中，除反应表面温度的均匀性外，反应气体流动的均匀性也对沉积薄膜的性能和质量有较大的影响。尤其是在低于常压下进行的CVD反应，反应气体从进气管路进入进气腔室时有着较大的初始速度，在进气室内容易形成较为明显的涡流。对于水平进气结构的进气室及反应室，为改善晶圆表面生长外延层的质量和性能通常有两种方式。第一种方式为将进气室设计的较长可以实现反应气体在到达晶圆表面时处于均匀流动的状态。第二种方式为采用气动或其他传动方式使晶圆处于旋转的状态。
以上两种方式虽然一定程度上能够缓解反应气体流动的不均匀对沉积的外延层质量及性能的影响。但进气室长度增加的同时也使得外延设备的长度增加，设备的重量及成本也同步增长。此外，使晶圆旋转无法完全消除反应气体流动的不均匀性对晶圆表面沉积外延层的厚度均匀性及掺杂浓度均匀性的影响。
发明内容
本申请的目的在于提供了一种进气装置及CVD设备，用以解决相关技术中存在的不足。
为达上述目的，第一方面，本申请提供了一种进气装置，应用于CVD设备， 所述进气装置包括进气室本体、安装座、多孔透气件及挡风板。所述安装座设置于所述进气室本体，所述多孔透气件设置于所述安装座与所述进气室本体之间，且所述多孔透气件与所述安装座之间形成至少三个气流调节腔，所述安装座上对应所述至少三个气流调节腔分别设有进气接口，所述进气接口用于向对应的所述气流调节腔导入反应气体，所述进气室本体对应所述至少三个气流调节腔分别设有导气室。其中，每个所述气流调节腔中均设有与所述进气接口对应的所述挡风板，所述挡风板位于所述多孔透气件与所述安装座之间。
结合第一方面，在一种可能的实施方式中，所述气流调节腔的数量为三个，对应的所述导气室设有三个，三个所述导气室分别为第一导气室及为位于所述第一导气室两侧的第二导气室。其中，所述第一导气室的宽度大于所述第二导气室的宽度。
结合第一方面，在一种可能的实施方式中，所述多孔透气件具有连通所述气流调节腔与所述导气室的细小孔群。
结合第一方面，在一种可能的实施方式中，所述细小孔群包括多个细小孔，所述细小孔的孔径与数量成反比关系。
结合第一方面，在一种可能的实施方式中，所述细小孔的孔径为0.3mm-1mm。
结合第一方面，在一种可能的实施方式中，所述多孔透气件为多孔透气板。
结合第一方面，在一种可能的实施方式中，所述挡风板设置于所述安装座或所述多孔透气件上，且所述挡风板靠近所述进气接口的一侧设有球缺面。
结合第一方面，在一种可能的实施方式中，所述进气接口处设有流量调节器和/或质量流量计。
结合第一方面，在一种可能的实施方式中，所述进气室本体为高纯石英材质或不锈钢材质。
结合第一方面，在一种可能的实施方式中，所述安装座与所述进气室本体之间通过密封件实现密封配合。
结合第一方面，在一种可能的实施方式中，所述进气室本体包括安装部及气 室部，所述安装座设置于所述安装部，所述安装座与所述安装部之间通过通过紧固组件实现可拆卸连接。
第二方面，本申请还提供了一种CVD设备，应用于晶圆外延层的加工，所述CVD设备包括如上述第一方面提供的进气装置。
结合第二方面，在一种可能的实施方式中，所述导气室的出气侧均朝向所述晶圆的外周面，且位于所述进气室本体中间的所述导气室与所述晶圆对应，且宽度大于等于所述晶圆的直径。
相比于现有技术，本申请的有益效果：
本申请提供的一种进气装置及CVD设备，进气装置通过进气接口向对应的气流调节腔导入CVD设备的反应气体，此时反应气体以较高的流速朝向挡风板流动，挡风板会阻挡反应气体直接流向多孔透气件，进而消耗反应气体的气流速度，使得反应气体进入气流调节腔后的流速降低并分散开，当反应气体再通过多孔透气件进一步的分散，并且多孔透气件的设置使得反应气体在经过多孔透气件后形成压力差，由此反应气体进入对应的导气室时能够很快的达到均匀流动的状态，进而无需设计较长的进气结构。进气装置应用于CVD设备中，可以使晶圆生成厚度均匀、掺杂浓度均匀的外延层，同时减少CVD设备的长度，减少占地面积，降低材料的损耗，进而极大地降低设备成本。
本申请提供的进气装置中，反应气体在进气室本体内通过至少三个导气室实现分区流动，且导气室与气流调节腔对应，进而可实现进气室本体内不同导气室内反应气体的流量的精确控制。应用于CVD设备中，以便于提高CVD设备加工晶圆时沉积外延层的厚度均匀性及性能。
本申请提供的进气装置中，通过气流调节腔能有效的将进入导气室的气流由湍流转化为层流，从而保证晶圆衬底表面气流的稳定性，达到降低晶圆表面膜厚不均匀性、降低掺杂不均匀性、降低表面缺陷密度的目的。
本申请提供的进气装置中，因反应气体进入导气室的稳定性的提高，进而可以适配更大尺寸的晶圆的加工。
本申请提供的进气装置中，通过气流调节腔中挡风板及多孔透气件的作用， 可以有效地增加进气室本体前后端的压损，使反应气体在进气室本体前端进行充分混合，从而确保反应气体进入进气室本体后具有更稳定的浓度均匀性。
附图简要说明
为了更清楚地说明本申请实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本申请的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1示出了本申请实施例提供的一种进气装置的立体结构示意图。
图2示出了图1所示进气装置的分解示意图。
图3示出了图2所示进气装置中的安装座的立体结构示意图。
图4示出了图1所示进气装置的主视图。
图5示出了图4所示进气装置的左视图。
图6示出了本申请实施例未设置多孔透气件及挡风板(a)，和设置有多孔透气件及挡风板(b)进气装置的流体仿真得到的流场的速度流线图。
图7示出了未使用本申请实施例提供的进气装置加工得到的晶圆(a)和使用了本申请实施例提供的进气装置加工得到的晶圆(b)的测量17个点位置处外延层的厚度和掺杂浓度的数据图。
主要元件符号说明：
100-进气室本体；110-安装部；120-气室部；130-导气室；131-第一导气室；132-第二导气室；200-安装座；210-进气接口；220-凹槽；221-气流调节腔；300-多孔透气件；310-细小孔群；311-细小孔；400-挡风板；500-第一密封件；600-紧固组件。
实施本申请的方式
下面详细描述本申请的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下 面通过参考附图描述的实施例是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请中，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“固定”等术语应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或成一体；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触，或第一和第二特征通过中间媒介间接接触。而且，第一特征在第二特征“之上”、“上方”和“上面”可是第一特征在第二特征正上方或斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方，或仅仅表示第一特征水平高度小于第二特征。
实施例
请参阅图1及图2，本实施例提供了一种进气装置，应用于CVD设备，CVD设备用于晶圆的外延层加工。
本实施例提供的进气装置包括进气室本体100、安装座200及多孔透气件300。 其中，安装座200设置于进气室本体100上，多孔透气件300设置于安装座200与进气室本体100之间。
具体的，进气室本体100包括安装部110及气室部120，安装座200设置于进气室本体100的安装部110，安装座200与安装部110为可拆卸连接。
进一步的，安装座200与安装部110之间还设有第一密封件500，第一密封件500可使安装座200与安装部110的配合面处形成密封配合，避免气体泄漏。
可选地，第一密封件500可以是密封圈或橡胶垫片。
在本实施例中，安装座200与安装部110之间通过紧固组件600进行连接，紧固组件600的数量至少为两个，且该些紧固组件600沿安装座200四周均匀分布。
在一些实施例中，紧固组件600为螺栓。
在另一些实施例中，紧固组件600包括夹头、连接杆、垫片、弹簧及调节螺母，连接杆贯出安装座200设置，夹头设置于连接杆的一端，且夹头与安装部110远离安装座200的一侧抵接。垫片及弹簧依次套设于连接杆上，且垫片和弹簧均位于安装座200远离安装部110的一侧，垫片与安装座200抵接。调节螺母与连接杆为螺纹配合，调节螺母位于弹簧远离安装座200的一端，由此，弹簧位于调节螺母与垫片之间，并且弹簧受调节螺母及垫片的夹持。
当紧固组件600将安装座200与安装部110压紧时，此时弹簧处于压缩状态，弹簧为了恢复形变会给予调节螺母及垫片一定的推力，调节螺母会将该推力通过夹头作用于安装部110上，进而使夹头与垫片共同作用将安装座200与安装部110夹紧。由此，可通过拧动调节螺母，即可调节压紧力度。
请参阅图2、图3及图4，多孔透气件300位于安装座200与安装部110之间，在本实施例中，多孔透气件300安装于安装座200靠近安装部110的一侧，多孔透气件300与安装座200为螺钉连接。
进一步的，安装座200靠近多孔透气件300的一侧凹设有至少三个凹槽220，由于，多孔透气件300位于凹槽220的敞口侧，因此安装座200与多孔透气件300之间对应凹槽220形成至少三个气流调节腔221，安装座200远离多孔透气件300 的一侧对应每个气流调节腔221均设有一个进气接口210，进气接口210用于向对应的气流调节腔221导入反应气体。
进一步的，在安装座200与多孔透气件300之间设置有第二密封件，第二密封件用以在安装座200与多孔透气件300面接触的地方形成密封，以使相邻的两个气流调节腔221之间相对密封，进而避免相邻的两个气流调节腔221之间漏气，使得每个气流调节腔221相对独立。
其中，安装座200上凹槽220的数量可以设置三个、四个、五个或五个以上。为了更清楚的描述本申请的技术方案，在本实施例中，以安装座200上设有三个凹槽220进行举例说明，即安装座200上设有三个凹槽220，则对应气流调节腔221的数量也为三个。
在本实施例中，进气室本体100的气室部120对应设有三个导气室130，其中，三个导气室130分别与三个气流调节腔221一一对应设置。三个导气室130的进气侧与对应的气流调节腔221连通，三个导气室130的出气侧朝向CVD设备中待加工的晶圆的外周面，该外周面为晶圆的圆柱形的侧面，由此，导气室130用于将气流调节腔221调节后输出的反应气体向待加工的晶圆输送，以使晶圆的表面形成薄膜，即加工出外延层。
请一并参阅图5，进一步的，多孔透气件300具有连通气流调节腔221与导气室130的细小孔群310，其中，每个气流调节腔221对应的细小孔群310均包括多个细小孔311，且多个细小孔311在多孔透气件300与气流调节腔221对应的区域均匀分布。
为了避免进气接口210导入气流调节腔221的反应气体直接流向多孔透气件300，使得局部的细小孔311处的流速过大。由此，在本实施例中，进气装置还包括多个挡风板400，其中，每个气流调节腔221中均设置一块挡风板400，挡风板400位于多孔透气件300与安装座200之间，且挡风板400与进气接口210对应，以使反应气体的流速在挡风板400处先被消耗，使得反应气体在气流调节腔221中扩散开，再沿细小孔311进入导气室130中。
多孔透气件300的设置可增加反应气体在多孔透气件300前后的气流调节腔 221与导气室130之间的压力差，进而使反应气体从多孔透气件300流出时能够很快达到均匀流动的状态，由此，进入导气室130的反应气体能够快速达到均匀流动状态，进而可缩短气室部120的设计长度。
请参阅图6，图中示出了由流体仿真得到的流场的速度流线图，图中可以看出增加挡风板400和多孔透气件300反应气体在流过多孔透气件300后流线在很短的路径内已达到非常均匀的状态，且速度分布也更加均匀。
请参阅图7，图中示出了未使用本申请实施例提供的进气装置加工得到的晶圆与使用了本申请实施例提供的进气装置加工得到的晶圆分别取17个点位置处测量的外延层的厚度和掺杂浓度的数据图。其中，图中横坐标表示17个测量点，左侧纵坐标为厚度(单位微米)，图中以方块点及连线进行表示，右侧纵坐标为氮元素的掺杂浓度，在图中以圆点及连线进行表示。由图7可知，未使用本申请实施例提供的进气装置加工得到的晶圆的外延层厚度和掺杂浓度均不均匀，使用了本申请实施例提供的进气装置加工得到的晶圆的外延层厚度和掺杂浓度的均匀程度都得到了极大的改善。
请参阅图2、图3及图5在本实施例中，为保证多孔透气件300前后的气体调节腔与导气室130之间的压力差，其细小孔311的孔径与数量成反比关系，即保持细小孔311的总面积接近于固定的数值。
进一步的，挡风板400设置于多孔透气件300上，或者设置于安装座200上。
可选地，挡风板400靠近进气接口210的一侧设有球缺面，更有利于反应气体的扩散。
可选地，多孔透气件300为多孔透气板。多孔透气件300也可由其它类型的材料压缩或者铸造成的形式，如三维的多孔材料，例如泡沫板。
进一步的，在本实施例中，细小孔311的孔径选择设计的范围为0.3mm-1mm。以确保多孔透气件300前后的压差范围在300mbar～30mbar之间，进而使反应气体从多孔透气件300流出时能够更快达到均匀流动的状态。
在一些实施例中，细小孔311的孔径选择设计的范围为0.3mm-0.85mm。
在另一些实施例中，细小孔311的孔径选择设计的范围为0.3mm-0.65mm。
可选地，细小孔311的孔径可选择设计为0.32mm、0.35mm、0.38mm、0.4mm、0.43mm、0.45mm、0.47mm、0.49mm、0.51mm、0.54mm、0.58mm、0.6mm、0.62mm或0.64mm。应当理解的，上述仅是举例说明，不作为本申请保护范围的限制。
进一步的，气室部120内的三个导气室130位于同一平面内。在本实施例中，三个导气室130分别是第一导气室131及为位于第一导气室131两侧的第二导气室132，第一导气室131的宽度大于两侧第二导气室132的宽度。其中，第一导气室131与待加工的晶圆对应，且第一导气室131的宽度大于等于晶圆的直径。
对于大尺寸的晶圆(如6"和8"的晶圆)，由于晶圆边缘距离CVD设备的反应室的侧壁距离较近，反应气体流动时由于形成边界层将导致晶圆边缘部分的流速略小于晶圆中间部分的速度，进而导致沉积形成的薄膜的厚度均匀性和掺杂均匀性略差，因此将气室部120设置成至少三个导气室130，进而形成多个分区，多个分区可以方便调整晶圆不同位置的反应气体的流量以获得更加均匀的薄膜，且工艺参数可调整性更好。
另外，由于边界层范围较小，因此将两侧的第二导气室132的宽度设置相对较窄，用以调节反应室侧壁边界层的流速与流量。由此，至少设置三个导气室130即可实现流经晶圆中间及两侧的流量和速度的调节，又有利于获得更加均匀的薄膜。
此外，三个导气室130进气对于小尺寸的晶圆(如4"的晶圆)，根据工艺验证结果，中间进气的宽度对沉积的薄膜的厚度、掺杂浓度的均匀性影响很大，当宽度大于4"晶圆的直径时，晶圆上沉积薄膜的质量更高，边缘进气区域的流量改变对沉积薄膜的质量基本无影响。因此，设置三个导气室130时，要求中间宽，两边窄。
进一步的，本实施例可在每个进气接口210处均设有流量调节器和质量流量计，以对进入每个气流调节腔221的反应气体的流量进行独立调节以及独立监控。
进一步的，进气室本体100为高纯石英材质、不锈钢材质或其它耐高温的金属材质。
在本实施例中，进气室本体100由多个高纯石英片体及石英座熔焊而成，相 邻的两个导气室130之间形成隔板，其中，隔板长度与进气室长度一致熔焊后保证进气室本体100不存在漏气的情况。
本实施例还一并提供了一种CVD设备，该CVD设备用于晶圆的外延层加工，其中，CVD设备包括上述提供的进气装置。
结合参阅图1至图7，相比于相关技术，本实施例提供的进气装置通过进气接口210向对应的气流调节腔221导入CVD设备的反应气体，此时反应气体以较高的流速朝向挡风板400流动，挡风板400会阻挡反应气体直接流向多孔透气件300，进而消耗反应气体的气流速度，使得反应气体进入气流调节腔221后的流速降低并分散开，当反应气体再通过多孔透气件300进一步的分散，并且多孔透气件300的设置使得反应气体在经过多孔透气件300后形成压力差，由此反应气体进入对应的导气室130时能够很快的达到均匀流动的状态，进而无需设计较长的进气结构。进气装置应用于CVD设备中，可以是晶圆生成厚度均匀、掺杂浓度均匀的外延层，同时减少CVD设备的长度，减少占地面积，降低材料的损耗，进而极大地降低设备成本。
另外本申请提供的进气装置中还具有如下优点：
(1)反应气体在进气室本体100内通过至少三个导气室130实现分区流动，且导气室130与气流调节腔221对应，进而可实现进气室本体100内不同导气室130内反应气体的流量的精确控制。应用于CVD设备中，以便于提高CVD设备加工晶圆时沉积外延层的厚度均匀性及性能。
(2)通过气流调节腔221能有效的将进入导气室130的气流由湍流转化为层流，从而保证晶圆衬底表面气流的稳定性，达到降低晶圆表面膜厚不均匀性、降低掺杂不均匀性、降低表面缺陷密度的目的。
(3)因反应气体进入导气室130的稳定性的提高，进而可以适配更大尺寸的晶圆的加工。
(4)通过气流调节腔221中挡风板400及多孔透气件300的作用，可以有效地增加进气室本体100前后端的压损，使反应气体在进气室本体100前端进行充分混合，从而确保反应气体进入进气室本体100的导气室130后具有更稳定的浓 度均匀性。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本申请的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本申请的限制，本领域的普通技术人员在本申请的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (13)

  1. 一种进气装置，应用于CVD设备，所述进气装置包括进气室本体、安装座、多孔透气件及挡风板；
    所述安装座设置于所述进气室本体，所述多孔透气件设置于所述安装座与所述进气室本体之间，且所述多孔透气件与所述安装座之间形成至少三个气流调节腔，所述安装座上对应所述至少三个气流调节腔分别设有进气接口，所述进气接口用于向对应的所述气流调节腔导入反应气体，所述进气室本体对应所述至少三个气流调节腔分别设有导气室；
    其中，每个所述气流调节腔中均设有与所述进气接口对应的所述挡风板，所述挡风板位于所述多孔透气件与所述安装座之间。
  2. 根据权利要求1所述的进气装置，其中，所述气流调节腔的数量为三个，对应的所述导气室设有三个，三个所述导气室分别为第一导气室及为位于所述第一导气室两侧的第二导气室，其中，所述第一导气室的宽度大于所述第二导气室的宽度。
  3. 根据权利要求1或2所述的进气装置，其中，所述多孔透气件具有连通所述气流调节腔与所述导气室的细小孔群。
  4. 根据权利要求3所述的进气装置，其中，所述细小孔群包括多个细小孔，所述细小孔的孔径与数量成反比关系。
  5. 根据权利要求4所述的进气装置，其中，所述细小孔的孔径为0.3mm-1mm。
  6. 根据权利要求3至5任一项所述的进气装置，其中，所述多孔透气件为多孔透气板。
  7. 根据权利要求1至6任一项所述的进气装置，其中，所述挡风板设置于所述安装座或所述多孔透气件上，且所述挡风板靠近所述进气接口的一侧设有球缺面。
  8. 根据权利要求1至7任一项所述的进气装置，其中，所述进气接口处设有流量调节器和/或质量流量计。
  9. 根据权利要求1至8任一项所述的进气装置，其中，所述进气室本体为高纯石英材质或不锈钢材质。
  10. 根据权利要求1至9任一项所述的进气装置，其中，所述安装座与所述进气室本体之间通过密封件实现密封配合。
  11. 根据权利要求1至10任一项所述的进气装置，其中，所述进气室本体包括安装部及气室部，所述安装座设置于所述安装部，所述安装座与所述安装部之间通过通过紧固组件实现可拆卸连接。
  12. 一种CVD设备，应用于晶圆外延层的加工，所述CVD设备包括如权利要求1-11中任一项所述的进气装置。
  13. 根据权利要求12所述的CVD设备，其中，所述导气室的出气侧均朝向所述晶圆的外周面，且位于所述进气室本体中间的所述导气室与所述晶圆对应，且宽度大于等于所述晶圆的直径。
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