WO2023138177A1

WO2023138177A1 - Cover plates, manufacturing method therefor and electronic device

Info

Publication number: WO2023138177A1
Application number: PCT/CN2022/130898
Authority: WO
Inventors: 陈江
Original assignee: Oppo广东移动通信有限公司
Priority date: 2022-01-18
Filing date: 2022-11-09
Publication date: 2023-07-27
Also published as: CN114302604A; CN114302604B

Abstract

The present application provides cover plates, a manufacturing method therefor and an electronic device. A cover plate comprises a cover plate body; and a protective layer, which is arranged on a surface of the cover plate body and is a diamond-like film layer, the range of a water contact angle θ1 of the protective layer being 120°≤θ1≤130°. The protective layer of the cover plate in the present application exhibits good wear resistance, and various properties thereof, such as being self-cleaning, waterproof, anti-fouling and anti-fingerprint, can be maintained longer.

Description

Cover plate, its preparation method and electronic device

technical field

The present application relates to the field of electronics, in particular to a cover plate, its preparation method and electronic equipment.

Background technique

The anti-water, anti-oil and anti-fingerprint effect of the cover plate of electronic equipment directly affects the user experience, especially when the cover plate is used as a screen cover plate, it also affects the display effect of the screen. The current anti-fingerprint layer of the cover usually uses an organic coating, however, the organic coating has poor wear resistance, and after a period of use, the anti-fingerprint effect is significantly reduced or even disappears.

Contents of the invention

The embodiment of the first aspect of the present application provides a cover plate, which includes:

the cover body; and

A protective layer, the protective layer is arranged on the surface of the cover body, the protective layer is a diamond-like film layer, and the range of the water contact angle θ1 of the protective layer is 120°≤θ1≤130°.

The embodiment of the second aspect of the present application provides a cover plate, which includes:

the cover body; and

A protective layer, the protective layer is arranged on the surface of the cover body, the protective layer is a diamond-like film layer, the protective layer has a plurality of protrusion structures, the plurality of protrusion structures are located on the surface of the protective layer away from the cover body, and each of the protrusion structures has a plurality of sub-protrusions located on the surface of the protrusion structure.

The embodiment of the third aspect of the present application provides a method for preparing a cover plate, which includes:

Provide the cover body; and

A protective layer is formed on the surface of the cover body, wherein the protective layer is a diamond-like film layer, and the range of the water contact angle θ1 of the protective layer is 120°≤θ1≤130°.

The embodiment of the fourth aspect of the present application provides an electronic device, which includes:

display components;

The cover plate described in the embodiment of the present application, the cover plate is arranged on one side of the display assembly, and

A circuit board assembly, the circuit board assembly is electrically connected to the display assembly, and is used to control the display assembly to display.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the accompanying drawings required in the embodiments will be briefly introduced below. Obviously, the accompanying drawings in the following description are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can also be obtained based on these drawings without creative work.

FIG. 1 is a schematic structural view of a cover plate according to an embodiment of the present application.

FIG. 2 is a schematic cross-sectional structural view of the cover plate along the direction A-A in FIG. 1 according to an embodiment of the present application.

FIG. 3 is an enlarged view of the dashed box I in FIG. 2 .

FIG. 4 is a microscope topography view of the surface of the protective layer of the cover plate away from the cover plate body according to an embodiment of the present application.

Fig. 5 is a schematic structural diagram of a protective layer according to an embodiment of the present application.

Fig. 6 is a schematic structural diagram of a cover plate according to another embodiment of the present application.

FIG. 7 is a schematic flowchart of a method for preparing a cover plate according to an embodiment of the present application.

Fig. 8 is a schematic flowchart of a method for preparing a cover plate according to another embodiment of the present application.

FIG. 9 is a schematic structural diagram corresponding to S302 and S303 in the method for manufacturing a cover plate according to an embodiment of the present application.

FIG. 10 is a schematic structural diagram corresponding to S304 and S305 in the method for manufacturing a cover plate according to an embodiment of the present application.

FIG. 11 is a schematic flowchart of a method for preparing a cover plate according to another embodiment of the present application.

Fig. 12 is a schematic flowchart of a method for preparing a cover plate according to another embodiment of the present application.

Fig. 13 is a microscope image of the surface topography of the protective layer of Example 1 of the present application.

FIG. 14 is an enlarged view of the block in FIG. 13 .

FIG. 15 is a graph showing the visible-ultraviolet light transmittance curves of the cover plates of Example 1 and Comparative Example 1. FIG.

FIG. 16 is a graph of infrared light transmittance curves of the cover plates of Example 1 and Comparative Example 1. FIG.

Fig. 17 is the microscopic topography of the cover plate of Example 1 before and after sandblasting, wherein (a) is the microscopic topography of the cover plate before sandblasting, and (b) is the microscopic topography of the cover plate after sandblasting.

Fig. 18 is the microscope topography of the cover plate of Comparative Example 1 before and after sandblasting, wherein (a) is the microscope topography of the cover plate before sandblasting, and (b) is the microscope topography of the cover plate after sandblasting.

FIG. 19 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

FIG. 20 is a schematic diagram of a partial exploded structure of an electronic device according to an embodiment of the present application.

FIG. 21 is a circuit block diagram of an electronic device according to an embodiment of the present application.

Fig. 22 is a circuit block diagram of an electronic device according to yet another embodiment of the present application.

Explanation of reference signs:

100-cover, 10-cover body, 30-protection layer, 30a-first protection sublayer, 30b-second protection sublayer, 31-protrusion structure, 311-sub-protrusion, 32-first crystal nucleus, 34-first deposition layer, 36-second crystal nucleus, 38-second deposition layer, 50-protection layer, 600-electronic equipment, 610-display component, 420-middle frame, 630-circuit board component, 631-processor , 633-memory, 640-housing, 641-translucent part, 650-camera module.

Detailed ways

In a first aspect, the present application provides a cover plate, which includes:

the cover body; and

Wherein, the protection layer has a plurality of protrusion structures located on the surface of the protection layer away from the cover body, and each of the protrusion structures has a plurality of sub-protrusions located on the surface of the protrusion structure.

Wherein, the protection layer includes a plurality of first crystal nuclei, a first deposition layer, a plurality of second crystal nuclei and a second deposition layer, the plurality of first crystal nuclei are arranged at intervals on the surface of the cover plate body, the first deposition layer covers the surface of the plurality of first crystal nuclei, the plurality of second crystal nuclei are arranged on the surface of the first deposition layer away from the first crystal nuclei, and the second deposition layer covers the surfaces of the plurality of second crystal nuclei, wherein the first crystal nuclei and the first deposition layer form a first protective sub-layer, and the first protective sub-layer is a first diamond-like sub-film layer, and the second crystal nuclei and The second deposited layer constitutes a second protective sublayer, and the second protective sublayer is a second diamond-like sublayer.

Wherein, the first crystal nucleus is a first diamond nucleus, and the second crystal nucleus is a second diamond nucleus; the first deposited layer is a diamond-like film layer, and the second deposited layer is a diamond-like film layer.

Wherein, the range of the thickness h1 of the protective layer is 5 μm≤h1≤10 μm; the range of the maximum distance d1 of the area surrounded by the orthographic projection of the raised structure on the surface of the protective layer is 3 μm≤d1≤7 μm; the range of the distance d2 between the two furthest points on the sub-protrusions is 40nm≤d2≤2 μm.

Wherein, the visible light transmittance of the cover plate is greater than or equal to 80%, the infrared light transmittance of the cover plate is greater than or equal to 80%, and the ultraviolet light transmittance of the cover plate is greater than or equal to 80%.

Wherein, the cover body includes at least one of glass, ceramic or sapphire.

In a second aspect, the present application provides a cover plate, which includes:

the cover body; and

Wherein, the protective layer includes a plurality of first crystal nuclei, a first deposition layer, a plurality of second crystal nuclei and a second deposition layer, the plurality of first crystal nuclei are arranged at intervals on the surface of the cover plate body, the first deposition layer covers the surface of the plurality of first crystal nuclei, the plurality of second crystal nuclei are arranged on the surface of the first deposition layer away from the first crystal nuclei, and the second deposition layer covers the surface of the plurality of second crystal nuclei, wherein the first crystal nuclei and the first deposition layer form a first protective sub-layer, and the first protective sub-layer is a first diamond-like sub-film layer, and the second crystal nuclei The core and the second deposition layer form a second protection sublayer, and the second protection sublayer is a second diamond-like sublayer.

Wherein, the cover body includes at least one of glass, ceramic or sapphire.

In a third aspect, the present application provides a method for preparing a cover plate, which includes:

Provide the cover body; and

Wherein, the formation of a protective layer on the surface of the cover body includes:

Carrying out the first electrostatic deposition of the cover plate body in the first diamond nucleation liquid to form a first crystal nucleus on the surface of the cover plate body, the first crystal nucleus being the first diamond crystal nucleus;

Depositing diamond-like carbon on the surface of the first crystal nucleus to obtain a first diamond-like carbon sub-film layer;

In the second diamond nucleation liquid, carry out the second electrostatic deposition, to form a second crystal nucleus on the surface of the first diamond-like sub-film layer, the second crystal nucleus is the second diamond crystal nucleus; and

Deposit diamond-like carbon on the surface of the second crystal nucleus to obtain a second diamond-like sub-film layer, wherein the protective layer includes the first diamond-like sub-film layer and the second diamond-like sub-film layer, and the diamond-like film layer includes the first diamond-like sub-film layer and the second diamond-like sub-film layer.

Wherein, the electrodeposition of the cover plate body in the first diamond nucleation solution is performed to form a first crystal nucleus on the surface of the cover plate body, including:

Place the cover plate body in the first diamond nucleation liquid with an average diamond particle size ranging from 1 μm to 4 μm, a diamond mass concentration ranging from 0.02% to 0.06%, and a pH value of 4.5 to 5.5, and perform ultrasonic waves; and

The first electrostatic deposition is performed under the range of the first voltage U1 of 15V≤U1≤25V, and the time range of the first electrostatic deposition is 2min to 4min, so as to form a first crystal nucleus on the surface of the cover body.

Wherein, in the second diamond nucleation liquid, carry out the second electrostatic deposition, to form the second crystal nucleus on the surface of the first diamond-like sub-film layer, comprising:

Ultrasound is carried out in the second diamond nucleation liquid whose average diamond particle size ranges from 30nm to 1 μm, the diamond mass concentration ranges from 0.02% to 0.06%, and the pH value is 3 to 4; and

The second electrostatic deposition is carried out under the second voltage U2 in the range of 6V≤U2≤10V, and the time range of the second electrostatic deposition is in the range of 60s to 90s, so as to form the second crystal nuclei on the surface of the first DLC sub-film layer.

Wherein, after the diamond-like carbon is deposited on the surface of the first crystal nucleus to obtain the first diamond-like sub-film layer, the second electrostatic deposition is carried out in the second diamond nucleation liquid, so that before the second crystal nucleus is formed on the surface of the first diamond-like sub-film layer, the method also includes:

The oxidation treatment is carried out in an oxidation solution, wherein the oxidation solution is an aqueous solution including hydrogen peroxide and ammonia water.

Wherein, the deposition of diamond-like carbon on the surface of the first crystal nucleus to obtain the first diamond-like carbon sub-film layer includes:

Using methane and hydrogen as the reaction gas, the methane is the first flow rate, the hydrogen is the second flow rate, the temperature of the reaction gas is the first temperature, the temperature of the cover body is the second temperature, and the hot wire chemical vapor deposition method is used under the first pressure to deposit diamond-like carbon on the surface of the first crystal nucleus for the first time to obtain the first diamond-like sub-film layer, wherein the first flow rate is 30SCCM to 50SCCM, the second flow rate is 650SCCM to 750SCCM, and the first temperature is 2450°C to 2650°C, the second temperature is 750°C to 850°C, the first pressure is 1.8KPa to 2.2KPa, and the first time is 50min to 80min.

Wherein, said depositing diamond-like carbon on the surface of the second crystal nucleus, to obtain the second diamond-like carbon sub-film layer, includes:

Using methane and hydrogen as the reaction gas, the methane is the third flow rate, the hydrogen is the fourth flow rate, the temperature of the reaction gas is the third temperature, the temperature of the cover plate body is the fourth temperature, and the hot wire chemical vapor deposition method is used under the second pressure. The diamond-like carbon is deposited on the surface of the second crystal nucleus for a second time to obtain a second diamond-like sub-film layer, wherein the third flow rate is 30SCCM to 50SCCM, the fourth flow rate is 650SCCM to 750SCCM, and the third temperature is 2450°C to 2650°C, the fourth temperature is 750°C to 850°C, the second pressure is 1.8KPa to 2.2KPa, and the second time is 50min to 80min.

In a fourth aspect, the present application provides an electronic device, which includes:

display components;

Cover plate, the cover plate is arranged on one side of the display assembly; the cover plate includes a cover plate body and a protective layer, the protective layer is arranged on the surface of the cover plate body, and the protective layer is a diamond-like film layer; the protective layer satisfies at least one of the following conditions: the water contact angle θ1 of the protective layer is in the range of 120°≤θ1≤130°; Multiple sub-protrusions of the surface; and

The cover plate of the electronic device according to the fourth aspect of the present application may be the cover plate described in any one of the first aspect and the second aspect of the present application.

In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiment of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiment of the application. Obviously, the described embodiment is only a part of the embodiment of the application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.

The terms "first", "second" and the like in the description and claims of the present application and the above drawings are used to distinguish different objects, rather than to describe a specific order. Furthermore, the terms "include" and "have", as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes unlisted steps or units, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

Covers of electronic devices such as mobile phones, such as front or rear covers, can be deposited with an anti-fingerprint layer on the surface of the cover in order to avoid leaving watermarks, fingerprints, stains, etc. during use. The anti-fingerprint layer can be formed by a coating composed of active silane groups and fluorine-modified organic groups. The silane groups in the coating can be well bonded to the glass, and the fluorocarbon groups have low surface tension. The anti-fingerprint layer can be used to form better waterproof, oil-proof, and fingerprint-proof effects. However, the anti-fingerprint layer has poor abrasion resistance. After a period of use (for example, 3 to 6 months), the anti-fingerprint effect of the cover plate is significantly reduced or even disappears, which greatly reduces the experience of consumers.

Based on this, the embodiment of the present application provides a cover plate 100 which has a long-term anti-fingerprint effect. The cover plate 100 of the embodiment of the present application can be applied to but not limited to mobile phones, tablet computers, notebook computers, desktop computers, smart bracelets, smart watches, e-readers, game consoles and other electronic devices 600 (as shown in Figure 19 and Figure 20 ). The cover plate 100 in the embodiment of the present application may have a 2D structure, a 2.5D structure, a 3D structure, and the like. The cover plate 100 of the present application may be a front cover (such as a protective cover of a display screen), a middle frame, a rear cover (battery cover), a decoration, etc. of the electronic device 600 . In the following embodiments of the present application, the cover plate 100 is described in detail by taking the front cover of a mobile phone as an example, which should not be construed as a limitation to the cover plate 100 of the embodiment of the present application.

The technical solutions in the embodiments of the present application will be described below with reference to the accompanying drawings.

It should be noted that, for ease of description, in the embodiments of the present application, the same reference numerals represent the same components, and for the sake of brevity, in different embodiments, detailed descriptions of the same components are omitted.

Referring to FIG. 1 and FIG. 2 , the embodiment of the present application provides a cover 100 , which includes a cover body 10 and a protective layer 30 . The protective layer 30 is disposed on the surface of the cover body 10 , the protective layer 30 is a diamond-like film layer, and the water contact angle θ1 of the protective layer 30 is in the range of 120°≤θ1≤130°.

Diamond Like Carbon (DLC) refers to an amorphous carbon film containing a diamond-like structure. Diamond-like carbon film is a metastable material formed in the form of sp3 and sp2 bonds.

The protective layer 30 is arranged on the surface of the cover body 10. It can be that the protective layer 30 is arranged on one surface or multiple surfaces of the cover body 10, and it can also be a partial surface or the entire surface of the protective layer 30 arranged on one surface of the cover body 10. In the illustrations of the application, the protective layer 30 is arranged on one surface of the cover body 10 as an example for illustration, and should not be understood as limiting the embodiment of the application.

The water contact angle θ1 of the protective layer 30 may be, but not limited to, 120°, 121°, 122°, 123°, 124°, 125°, 126°, 127°, 128°, 129°, 130°, etc. The larger the water contact angle θ1 of the protective layer 30 is, the better the self-cleaning, waterproof, anti-fouling and anti-fingerprint effects of the prepared cover plate 100 are.

"Water contact angle" refers to the contact angle of water on the surface of the solid film layer, for example, the contact angle of water droplets on the surface of the protective layer 30 .

The cover plate 100 of the embodiment of the present application adopts 0000# steel wool with a load of 1Kg to rub the surface of the protective layer 10 back and forth. The cover plate 100 will not be scratched after more than 200,000 times of friction.

The cover plate 100 of the embodiment of the present application includes a protective layer 30, which is a diamond-like film layer, and the water contact angle θ1 of the protective layer 30 is in the range of 120°≤θ1≤130°. The water contact angle θ1 of the protective layer 30 is in the range of 120°≤θ1≤130°, the protective layer 30 has a relatively high water contact angle, and thus has low hysteresis, thus making the cover 100 have good waterproof, antifouling and antifingerprint properties. The diamond-like film layer has high hardness, good wear resistance, and is not easy to wear, so that after a long period of use, the cover plate 100 still has good self-cleaning, waterproof, anti-fouling and anti-fingerprint properties, and the self-cleaning, waterproof, anti-fouling and anti-fingerprint properties can be maintained for a longer period of time.

"Hysteresis" refers to the resistance of the surface to the rolling of droplets. The resistance is large and the hysteresis is high, and the resistance is small and the hysteresis is low.

Optionally, the visible light transmittance of the cover 100 is greater than or equal to 80%; further, the visible light transmittance of the cover 100 is greater than or equal to 85%; further, the visible light transmittance of the cover 100 is greater than or equal to 90%. Specifically, the visible light transmittance of the cover plate 100 may be, but not limited to, 80%, 82%, 85%, 88%, 90%, 93%, 95%, 97%, 98%, 99% and so on. The higher the visible light transmittance of the cover plate 100, when applied to the protective cover of the display screen of the electronic device 600, the display screen can have a better display effect; when applied to the back cover and the cover plate 100 is provided with textures or patterns, the cover plate 100 can have clearer textures or patterns.

Optionally, the infrared light transmittance of the cover plate 100 is greater than or equal to 80%; further, the infrared light transmittance of the cover plate 100 is greater than or equal to 85%; further, the infrared light transmittance of the cover plate 100 is greater than or equal to 90%. Specifically, the infrared light transmittance of the cover plate 100 may be, but not limited to, 80%, 82%, 85%, 88%, 90%, 93%, 95%, 97%, 98%, 99% and so on. The higher the infrared light transmittance of the cover plate 100, when applied to the protective cover of the display screen of the electronic device 600, it can better transmit infrared rays, so that the sensor under the cover plate 100, such as a fingerprint sensor, can better receive infrared rays, thereby achieving better detection effect.

Optionally, the UV transmittance of the cover 100 is greater than or equal to 80%; further, the UV transmittance of the cover 100 is greater than or equal to 85%; further, the UV transmittance of the cover 100 is greater than or equal to 90%. Specifically, the UV light transmittance of the cover plate 100 may be, but not limited to, 80%, 82%, 85%, 88%, 90%, 93%, 95%, 97%, 98%, 99% and so on. The higher the ultraviolet light transmittance of the cover 100 , when applied to the electronic device 600 , it can better transmit ultraviolet light, so that the ultraviolet light sensor under the cover 100 of the electronic device 600 can better sense ultraviolet light and perform more accurate detection.

In some embodiments, the material of the cover body 10 may be, but not limited to, at least one of glass, ceramic, or sapphire. Optionally, the ceramic may be, but not limited to, a silica-based ceramic.

When the cover plate 100 is used as the front cover of the electronic device 600, the cover plate body 10 is light-transmissive. The higher the light transmittance of the cover plate body 10 is, the better the display effect of the electronic device 600 is. , 93%, 95%, 97%, 98%, 99%, etc. When the cover plate 100 is used as the back cover of the electronic device 600 , the cover plate body 10 may be transparent, opaque or semi-transparent.

Optionally, the thickness of the cover body 10 is 0.3mm to 1mm; specifically, the thickness of the cover body 10 can be but not limited to 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm and so on. When the cover body 10 is too thin, it cannot play a supporting and protective role well, and the mechanical strength cannot well meet the requirements of the cover 100 of the electronic device 600. When the cover body 10 is too thick, the weight of the electronic device 600 will be increased, affecting the feel of the electronic device 600, and the user experience is not good.

3 and 4, in some embodiments, the protection layer 30 has a plurality of protrusion structures 31, the plurality of protrusion structures 31 are located on the surface of the protection layer 30 away from the cover body 10, and each of the protrusion structures 31 has a plurality of sub-protrusions 311 located on the surface of the protrusion structure 31. The protective layer 30 has a plurality of raised structures 31 on the surface, and each raised structure 31 has a plurality of sub-protrusions 311 on the surface, which makes the surface of the protective layer 30 form a lotus leaf bionic structure, so that the protective layer 30 has better hydrophobicity, has a higher water contact angle, and can better self-cleaning, waterproof, antifouling and anti-fingerprint performance.

Optionally, the range of the maximum distance d1 of the area surrounded by the orthographic projection of the raised structure 31 on the surface of the protective layer 30 is 3 μm≤d1≤7 μm; specifically, d1 can be but not limited to 3 μm, 3.5 μm, 4 μm, 4.5 μm, 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm, etc. When the size of the raised structure 31 is too large, the transmittance of the protective layer 30 will be reduced, which is not conducive to the application of the cover plate 100 to the display screen protection cover (ie, the front cover) of the electronic device 600, and the size of the raised structure 31 is too large, which will increase the roughness of the surface of the cover plate 100 and affect the feel of the cover plate 100. When the size of the protruding structure 31 is too small, the manufacturing process of the cover plate 100 becomes more difficult and the cost increases.

Optionally, the distance d2 between the two farthest points on the sub-protrusion 311 is in the range of 40nm≤d2≤2μm; in other words, the size of the sub-protrusion 311 is in the range of 40nm≤d2≤2μm; specifically, d2 can be but not limited to 40nm, 50nm, 80nm, 100nm, 300nm, 500nm, 800nm, 1μm, 1.5μm, 2μm, etc. . When the size of the sub-protrusions 311 is less than 40nm, the preparation difficulty of the protective layer 30 is increased, and it may even be difficult to realize in the process; when the size of the sub-protrusions 311 is greater than 2 μm, when the droplet falls on the surface of the protective layer 30, the contact area between the droplet and the surface of the protective layer 30 increases, thereby reducing the hydrophobicity of the surface of the protective layer 30 and increasing the hydrophilicity, thereby affecting the self-cleaning, waterproof, anti-oil and anti-fingerprint performance of the cover plate 100.

In some embodiments, the thickness h1 of the protective layer 30 ranges from 5 μm≤h1≤10 μm; specifically, h1 may be, but not limited to, 5 μm, 5.5 μm, 6 μm, 6.5 μm, 7 μm, 7.5 μm, 8 μm, 8.5 μm, 9 μm, 9.5 μm, 10 μm, etc. The thinner the protective layer 30 is, the better, but limited by materials and equipment, when the protective layer 30 is less than 5 μm, the difficulty and cost of preparing the protective layer 30 will be greatly increased, and when the thickness of the protective layer 30 is greater than 10 μm, the light transmittance of the cover plate 100 will be reduced, which is not conducive to the protective cover applied to the display screen of the electronic device 600. When the thickness of the protective layer 30 is 5 μm to 10 μm, the protective layer 30 can be easily prepared, the production cost can be reduced, and the influence on the light transmittance of the prepared cover plate 100 is small.

5, in some embodiments, the protective layer 30 includes a plurality of first crystal nuclei 32, a first deposition layer 34, a plurality of second crystal nuclei 36 and a second deposition layer 38, the plurality of first crystal nuclei 32 are arranged at intervals on the surface of the cover plate body, the first deposition layer 34 covers the surface of the plurality of first crystal nuclei 32, the plurality of second crystal nuclei 36 is arranged on the surface of the first deposition layer 34 away from the first crystal nuclei 32, and the second deposition layer 38 covers the surface of the plurality of second crystal nuclei 36, wherein , the first crystal nucleus 32 and the first deposition layer 34 form the first protective sublayer 30a, the first protective sublayer 30a is the first diamond-like sublayer, the second crystal nucleus 36 and the second deposition layer 38 form the second protective sublayer 30b, and the second protective sublayer 30b is the second diamond-like sublayer. The double lamination structure of the crystal nucleus and the deposition layer is beneficial to the formation of the raised structures 31 and the sub-raised structures 311 on the surface of the protective layer 30, and can better form the lotus leaf bionic structure.

Optionally, the first crystal nucleus 32 may be, but not limited to, a first diamond nucleus, and the second crystal nucleus 36 may be, but not limited to, a second diamond nucleus. The first diamond nucleus and the second diamond nucleus can be the same or different.

Optionally, the first deposition layer 34 may be, but not limited to, a diamond-like film layer, and the second deposition layer 38 may be, but not limited to, a diamond-like film layer.

Referring to FIG. 6 , the cover plate 100 further includes a protective layer 50 , and the water contact angle θ2 of the protective layer 50 is in the range of 120°≤θ2≤150°. The protective layer 50 has a larger water contact angle, so that the cover 100 has better waterproof, anti-fouling and anti-fingerprint effects.

Specifically, the water contact angle θ2 of the protective layer 50 may be, but not limited to, 121°, 122°, 123°, 124°, 125°, 126°, 127°, 128°, 129°, 130°, 133°, 135°, 138°, 140°, 145°, 150°, etc. The larger the water contact angle θ2 of the protective layer 50 is, the better the self-cleaning, waterproof, anti-fouling and anti-fingerprint effects of the prepared cover plate 100 are.

Optionally, the protective layer 50 may be, but not limited to, at least one of perfluoropolyether, perfluoropolyether derivatives, perfluoropolysilane silicon fluoride, and the like.

The cover plate 100 of the embodiment of the present application can be prepared by the method described in the following examples of the present application. In addition, it can also be prepared by other methods. The preparation method of the embodiment of the present application is only one or more of the preparation methods of the cover plate 100 of the present application, and should not be understood as a limitation on the cover plate 100 provided by the embodiment of the present application.

Please refer to Figure 2 again. The embodiment of this application also provides a cover 100, which includes the cover plate 10; and the protective layer 30, which is set on the surface of the cover plate 10. The protective layer 30 is a diamond -like film layer. From the surface of the cover body 10, each protruding structure 31 has multiple sub -bulging 311 on the surface of the raised structure 31.

Optionally, a plurality of protruding structures 31 are densely arranged, and a plurality of sub-protrusions 311 are densely arranged on the surface of each protruding structure 31 .

The cover plate 100 of this embodiment includes a protective layer 30, the protective layer 30 is a diamond-like film layer, the protective layer 30 has a plurality of protrusion structures 31, and each of the raised structures 31 has a plurality of sub-protrusions 311, which makes the surface of the protective layer 30 form a lotus leaf bionic structure, thereby having a higher water contact angle and lower hysteresis, thereby enabling the cover plate 100 to have good waterproof, antifouling and anti-fingerprint properties. The diamond-like film layer has high hardness, good wear resistance, and is not easy to wear, so that after a long period of use, the cover plate 100 still has good self-cleaning, waterproof, anti-fouling and anti-fingerprint properties, and the self-cleaning, waterproof, anti-fouling and anti-fingerprint properties can be maintained for a longer period of time.

Optionally, the range of the water contact angle θ1 of the protective layer 3030 is 120°≤θ1≤130°.

Optionally, the protection layer 30 includes a plurality of first crystal nuclei 32, a first deposition layer 34, a plurality of second crystal nuclei 36, and a second deposition layer 38. The plurality of first crystal nuclei 32 are arranged at intervals on the surface of the cover plate body 10. The first deposition layer 34 covers the surfaces of the plurality of first crystal nuclei 32. The plurality of second crystal nuclei 36 are arranged on the surface of the first deposition layer 34 away from the first crystal nuclei 32. The second deposition layer 38 covers the surfaces of the plurality of second crystal nuclei 36, wherein the first crystal nuclei 32 and the first deposition layer 34 form the first protective sub-layer 30a, the first protective sub-layer 30a is the first diamond-like sub-film layer, the second crystal nucleus 36 and the second deposition layer 38 form the second protective sub-layer 30b, and the second protective sub-layer 30b is the second diamond-like sub-film layer. The double lamination structure of the crystal nucleus and the deposition layer is beneficial to the formation of the raised structures 3131 and the sub-raised structures 31311 on the surface of the protective layer 3030, and can better form the lotus leaf bionic structure.

In some embodiments, the thickness h1 of the protective layer 30 is in the range of 5 μm≤h1≤10 μm; the maximum distance d1 of the area surrounded by the orthographic projection of the raised structure 31 on the surface of the protective layer 30 is in the range of 3 μm≤d1≤7 μm; the distance d2 between the two furthest points on the sub-protrusions 311 is in the range of 40nm≤d2≤2 μm.

In some embodiments, the visible light transmittance of the cover 100 is greater than or equal to 80%, the infrared transmittance of the cover 100 is greater than or equal to 80%, and the ultraviolet transmittance of the cover 100 is greater than or equal to 80%.

In some embodiments, the cover body 10 includes at least one of glass, ceramic or sapphire.

For the detailed description of the cover plate 100, the cover plate body 10, the protective layer 30, the first crystal nucleus 32, the first deposition layer 34, the plurality of second crystal nuclei 36, the second deposition layer 38, the protrusion structure 31 and the sub-protrusion 311 structure 31, please refer to the description of the corresponding part of the above embodiment, and will not repeat them here.

Please refer to FIG. 7 , the embodiment of the present application also provides a method for preparing a cover plate 100, which includes:

S201, providing the cover plate body 10; and

For a detailed description of the cover body 10 , please refer to the description of the corresponding part of the above embodiment, and details are not repeated here.

S202, forming a protection layer 30 on the surface of the cover body 10, wherein the protection layer 30 is a diamond-like film layer, and the range of the water contact angle θ1 of the protection layer 30 is 120°≤θ1≤130°.

Alternatively, the surface of the cover body 10 can be electrostatically deposited with diamond nuclei dispersed on the surface of the cover body 10, and then a diamond-like film layer is deposited on the surface of the diamond nuclei by Hot Filament Chemical Vapor Deposition (HFCVD) to obtain the protective layer 30.

The cover plate 100 prepared by the preparation method of the embodiment of the present application includes a protective layer 30, the protective layer 30 is a diamond-like film layer, and the water contact angle θ1 of the protective layer 30 is in the range of 120°≤θ1≤130°. The water contact angle θ1 of the protective layer 30 is in the range of 120°≤θ1≤130°, so that the cover 100 has good waterproof, antifouling and antifingerprint properties. The diamond-like film layer has high hardness, good wear resistance, and is not easy to wear, so that after a long period of use, the cover plate 100 still has good self-cleaning, waterproof, anti-fouling and anti-fingerprint properties, and the self-cleaning, waterproof, anti-fouling and anti-fingerprint properties can be maintained for a longer period of time.

Please refer to FIG. 8 to FIG. 10 , the embodiment of the present application also provides a preparation method of the cover plate 100, which includes:

S301, providing the cover body 10;

S302, performing a first electrostatic deposition on the cover body 10 in a first diamond nucleation solution, so as to form a first crystal nucleus on the surface of the cover body 10;

Optionally, the first electrostatic deposition of the cover body 10 in the first diamond nucleation solution is performed to form a first crystal nucleus 32 on the surface of the cover body 10, including:

S3021, placing the cover plate body 10 in the first diamond nucleation liquid with an average diamond particle diameter ranging from 1 μm to 4 μm, a diamond mass concentration ranging from 0.02% to 0.06%, and a pH value of 4.5 to 5.5, and performing ultrasonic waves; and

Optionally, take an appropriate amount of diamond nucleation stock solution with a diamond average particle size ranging from 1 μm to 4 μm and a mass concentration of 20%, dilute it with deionized water to configure a suspension colloid with a mass concentration ranging from 0.02% to 0.06%, add oxalic acid, and adjust the pH value to obtain the first diamond nucleation solution with a pH value between 4.5 and 5.5; immerse the cover plate body 10 in the first diamond nucleation solution, and ultrasonically environment, soak for 30min. Through ultrasonic vibration, the diamond in the first diamond nucleation liquid can be better prevented from settling, and the diamond in the first diamond nucleation liquid can be better dispersed, so that the finally obtained first crystal nuclei 32 can be more evenly dispersed on the surface of the cover body 10. In the embodiments of the present application, when it comes to the numerical range a to b, unless otherwise specified, it means that the endpoint value a is included, and the endpoint value b is included. Optionally, the first crystal nucleus 32 is a first diamond crystal nucleus.

Optionally, the average particle size of the diamonds in the first diamond nucleation solution may be, but not limited to, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm and the like. The smaller the average particle size of the diamond in the first diamond nucleation solution, the better. When the average particle size of the diamond is too large (eg, greater than 4 μm), it is difficult to form the lotus leaf bionic structure, which affects the hydrophobicity of the finally formed protective layer 30 surface.

Optionally, the mass concentration of diamond in the first diamond nucleation solution can be a value between 0.02% and 0.06%, specifically, but not limited to 0.02%, 0.03%, 0.04%, 0.05%, 0.06%. If the concentration of the first diamond nucleation liquid is too low, the distribution of the finally formed first crystal nuclei 32 on the surface of the cover plate body 10 is likely to be insufficient; if the concentration of the first diamond nucleation liquid is too high, diamonds are likely to be locally enriched on the surface of the cover plate body 10, so that the first crystal nuclei 32 formed have different sizes, which affects the bionic structure of the lotus leaf on the surface of the finally prepared protective layer 30, thereby affecting the hydrophobicity of the protective layer 30. When the concentration of the first diamond in the first diamond nucleation liquid is 0.02% to 0.06%, sufficient first crystal nuclei 32 can be formed on the surface of the cover plate body 10, and the size of the first crystal nuclei 32 caused by diamond enrichment can be well avoided, so that the finally obtained protective layer 30 has a heterochromatic phenomenon.

Optionally, the pH value of the first diamond nucleation liquid is any value between 4.5 and 5.5, specifically, it may be but not limited to 4.5, 5.0, 5.5 and so on. When the pH value of the first diamond nucleation liquid is in this range, the diamond in the first diamond nucleation liquid can be dispersed more stably and uniformly.

S3022, performing the first electrostatic deposition under the range of the first voltage U1 of 15V≤U1≤25V, and the time range of the first electrostatic deposition is 2min to 4min, so as to form the first crystal nucleus 32 on the surface of the cover body 10.

Optionally, power is applied so that the diamond particles in the first diamond nucleation liquid are evenly deposited on the surface of the cover body 10 , so that the surface of the cover body 10 is dispersed with first crystal nuclei 32 one by one.

Optionally, the first voltage U1 may be, but not limited to, 15V, 16V, 17V, 18V, 19V, 20V, 21V, 22V, 23V, 24V, 25V and so on. The higher the voltage of the first voltage U1, the faster the deposition speed of the diamond particles; when the first voltage is too high (such as higher than 25V), it is easy to make the diamond particles too enriched, and the particle size of the first crystal nuclei 32 formed is not uniform, so that the finally obtained protective layer 30 has a heterochromatic phenomenon. When the pressure of the first voltage is too low (such as lower than 15V), the deposition of diamond particles takes a long time, which affects the production efficiency, and it is easy to make the deposition of diamond particles insufficient, which affects the surface structure of the prepared protective layer 30, thereby affecting the self-cleaning, waterproof, oil-proof and anti-fingerprint performance of the cover plate 100. When the first voltage U1 is between 15V and 25V, the deposition rate of the diamond particles can be moderate, avoiding excessively slow deposition, which affects the production efficiency, and insufficient deposition of the diamond particles, which affects the surface structure of the protective layer 30. At the same time, Haikou can avoid excessive enrichment of the diamond particles, and the particle size of the first crystal nuclei 32 formed is not uniform, so that the finally obtained protective layer 30 has a different color phenomenon.

Optionally, the time for the first electrostatic deposition may be, but not limited to, 2 min, 2.5 min, 3 min, 3.5 min, 4 min and so on. When the first electrostatic deposition time is too long (for example, higher than 4 minutes), it is easy to enrich the diamond particles too much, and the particle size of the formed first crystal nuclei 32 is not uniform, so that the finally obtained protective layer 30 has heterochromatic phenomenon. When the first electrostatic deposition time is too short (for example, less than 2 minutes), the deposition of diamond particles is not enough, which affects the surface structure of the prepared protective layer 30, thus affecting the self-cleaning, waterproof, anti-oil and anti-fingerprint performance of the cover plate 100.

In some embodiments, before placing the cover body 10 in the first diamond nucleation solution for the first electrostatic deposition, the method further includes: cleaning the cover body 10 .

Specifically, the cover body 10 is placed in at least one of cleaning solutions such as ketones, sodium carbonate, sodium phosphate, etc., and cleaned in an ultrasonic environment of 28KHZ to remove oil, dust, etc. on the surface of the cover body 10; then the cover body 10 is rinsed with deionized water above 80°C (such as 85°C, 90°C, etc.), and dried.

S303, depositing diamond-like carbon on the surface of the first crystal nucleus 32 to obtain a first diamond-like carbon sub-film layer;

Optionally, the cover plate body 10 with the first crystal nucleus 32 obtained in S302 is placed on the sample stage of the HFCVD equipment, and methane and hydrogen are introduced as reaction gases. The methane is the first flow rate, the hydrogen gas is the second flow rate, the temperature of the reaction gas is the first temperature, and the temperature of the cover plate body 10 is the second temperature. Under the first pressure, the hot wire chemical vapor deposition method is used to deposit diamond-like carbon on the surface of the first crystal nucleus 32 for a first time to obtain a first diamond-like sub-film. Layer, wherein, the first flow rate is 30SCCM to 50SCCM, the second flow rate is 650SCCM to 750SCCM, the first temperature is 2450°C to 2650°C, the second temperature is 750°C to 850°C, the first pressure is 1.8KPa to 2.2KPa, and the first time is 50min to 80min.

When hydrogen and methane enter the reaction chamber of the HFCVD equipment through the spray ring, and flow through the hot wire heated by electric heating, they decompose into atomic hydrogen and various hydrocarbon groups on the surface and nearby. Under the high temperature of the hot wire, the hydrocarbon groups provide the precursors for the deposition of the diamond film and attach to the surface of the cover body 10 at a suitable temperature. These groups react under the action of atomic hydrogen, nucleate and grow on the surface of the cover body 10 to form a diamond-like film. 2, the diamond-like carbon will be enriched with the first crystal nucleus 32 as the center, thereby forming approximately hemispherical protrusions on the surface of the diamond-like carbon film. Optionally, the inside of the sample stage carrying the cover plate body 10 is fed with cooling circulating water to cool down the temperature, and the reacted gas is pumped out from the gas outlet by a mechanical pump.

The first flow rate can be any value between 30 SCCM and 50 SCCM. Specifically, it may be, but not limited to, 30SCCM, 32SCCM, 35SCCM, 38SCCM, 40SCCM, 43SCCM, 47SCCM, 50SCCM, etc. If the first flow rate of methane is too small, the diamond-like carbon deposited on the surface of the cover body 10 is not enough, which reduces the uniformity of the formed first diamond-like carbon sub-film layer, and finally affects the surface structure of the prepared protective layer 30, thereby affecting the hydrophobicity of the protective layer 30. If the first flow rate of methane is too high, the reaction of methane will be incomplete, and the methane will eventually be discharged from the reaction system, which increases the manufacturing cost of the cover plate 100 . When the first flow rate is 30SCCM to 50SCCM, the formed first diamond-like sub-film layer can have better uniformity, and the waste caused by incomplete methane reaction and direct discharge can be avoided.

The second flow rate can be any value between 650SCCM and 750SCCM. Specifically, it may be, but not limited to, 650SCCM, 660SCCM, 670SCCM, 680SCCM, 690SCCM, 700SCCM, 710SCCM, 720SCCM, 730SCCM, 740SCCM, 750SCCM, etc. The flow rate of the hydrogen gas is too low, which affects the deposition speed of the first diamond-like sub-film layer and reduces the production efficiency. If the flow rate of hydrogen is too fast, a large amount of hydrogen is directly discharged without participating in the reaction, which causes waste and increases the cost of raw materials. When the second flow rate is 650SCCM to 750SCCM, the first diamond-like sub-film layer can have a moderate deposition rate, and the waste caused by incomplete hydrogen reaction and direct discharge can be avoided.

The first temperature may be any value between 2450°C and 2650°C. Specifically, it may be, but not limited to, 2450°C, 2480°C, 2500°C, 2530°C, 2550°C, 2575°C, 2600°C, 2625°C, 2650°C, etc. The temperature of the gas is too low to reach the activation temperature of methane, and methane and hydrogen cannot react to form a diamond-like structure. The temperature of the gas is too high, which requires high equipment requirements and causes energy waste. When the first temperature is 2450° C. to 2650° C., methane can be fully activated to react with hydrogen to form a diamond-like structure, and energy waste can be avoided.

The second temperature may be, but not limited to, 750°C, 775°C, 800°C, 825°C, 850°C, and the like. If the second temperature is too low, the adhesion of the first diamond sub-film layer on the cover body 10 will be reduced; if the second temperature is too high, the cover body 10 will be easily deformed, which will affect the strength of the final cover 100 . When the second temperature is between 750°C and 850°C, the cover body 10 such as glass can be properly softened, and the silicon dioxide on the glass surface can react with the carbon in the methane to form C-Si bonds and C-O bonds, thereby improving the adhesion of the first diamond-like sub-film layer on the surface of the cover body 10, and finally improving the adhesion of the protective layer 30 on the surface of the cover body 10, and can prevent the cover body 10 from being deformed and reduced in strength.

The first pressure may be, but not limited to, 1.8KPa, 1.85KPa, 1.9KPa, 1.95KPa, 2.0KPa, 2.05KPa, 2.1KPa, 2.15KPa, 2.2KPa, etc. The greater the first pressure, the more uniform the deposition of diamondoid. However, the first pressure is too high, the requirements for equipment are relatively high, and there is a risk of explosion. Due to the large difference in the density of methane and hydrogen, methane is easy to sink, the first pressure is too small, it is easy to make the distribution of methane and hydrogen uneven, and finally make the deposition of diamondoid on the surface of the cover body 10 uneven, and finally affect the surface structure of the prepared protective layer 30, thereby affecting the hydrophobicity of the protective layer 30.

The first time may be, but not limited to, 50 min, 55 min, 60 min, 65 min, 70 min, 75 min, 80 min and so on. If the first time is too long, the first diamond-like sub-film layer formed is too thick, so that the thickness of the finally formed protective layer 30 is relatively large, which affects the light transmittance of the cover plate 100 . If the first time is too short, the formed first DLC sub-film layer is too thin, which will easily cause uneven distribution of DLC, and the finally obtained protective layer 30 will produce heterochromatic phenomenon.

S304, performing a second electrostatic deposition in the second diamond nucleation solution to form a second crystal nucleus 36 on the surface of the first diamond-like sub-film layer; and

Optionally, in the second diamond nucleation liquid, carry out the second electrostatic deposition, to form the second crystal nucleus 36 on the surface of the first diamond-like sub-film layer, comprising:

S3041, performing ultrasonic waves in the second diamond nucleation liquid whose average diamond particle size ranges from 30nm to 1 μm, the diamond mass concentration ranges from 0.02% to 0.06%, and the pH value ranges from 2.5 to 4; and

Optionally, take an appropriate amount of diamond nucleation stock solution with a diamond average particle size ranging from 30nm to 1 μm and a mass concentration of 20%, dilute it with deionized water to configure a suspension colloid with a mass concentration of 0.02% to 0.06%, add 2-(methacryloyloxy)ethyltrimethylammonium chloride as a stabilizer, add oxalic acid, and adjust the pH value to obtain a second diamond nucleation solution with a pH value between 2.5 and 4; The cover body 10 of the diamond-like sub-film layer is immersed in the second diamond nucleation solution, and soaked in a 28KHZ ultrasonic environment for 30 minutes. By ultrasonic vibration, the diamond in the second diamond nucleation liquid can be better prevented from settling, and the diamond in the second diamond nucleation liquid can be better dispersed, so that the second crystal nuclei 36 finally obtained can be more evenly dispersed on the surface of the first diamond-like sub-film layer. When configuring the second diamond nucleation liquid, adding a stabilizer can make the pH value of the second diamond nucleation liquid better stable between 2.5 and 4, so that diamond particles can be uniformly and stably dispersed in the second diamond nucleation liquid. Optionally, the second crystal nucleus 36 is a second diamond crystal nucleus.

Optionally, the average particle size of the diamond in the second diamond nucleation solution can be, but not limited to, 30nm, 50nm, 80nm, 100nm, 150nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1 μm, etc. To form a lotus leaf biomimetic structure, the distribution density of the finally formed sub-protrusions 33 cannot be too high or too low. Therefore, the average particle size in the second diamond nucleation liquid is too large or too small to form a lotus leaf biomimetic structure. When the average particle size of diamond in the second diamond nucleation liquid is 30nm to 1 μm, the lotus leaf biomimetic structure can be formed well, so that the protective layer 30 has good hydrophobicity.

Optionally, the mass concentration of diamond in the second diamond nucleation solution can be a value between 0.02% and 0.06%, specifically, but not limited to 0.02%, 0.03%, 0.04%, 0.05%, 0.06%. If the concentration of the second diamond nucleation liquid is too low, it is easy to cause insufficient distribution of the second crystal nucleus 36 formed on the surface of the first diamond-like sub-film layer; if the concentration of the second diamond nucleation liquid is too high, diamonds are easily locally enriched on the surface of the first diamond-like sub-film layer, so that the size of the second crystal nucleus 36 formed is different, which affects the lotus leaf bionic structure on the surface of the protective layer 30 that is finally prepared, thereby affecting the hydrophobicity of the protective layer 30. When the concentration of the second diamond in the second diamond nucleation liquid is 0.02% to 0.06%, sufficient second crystal nuclei 36 can be formed on the surface of the first diamond-like sub-film layer, and the size of the second crystal nuclei 36 caused by diamond enrichment can be well avoided.

Optionally, the pH value of the second diamond nucleation liquid is any value between 2.5 and 4, specifically, it may be but not limited to 2.5, 3, 3.5, 4, etc. When the pH value of the second diamond nucleation liquid is within this range, the diamond in the second diamond nucleation liquid can be dispersed more stably and uniformly.

S3042, perform the second electrostatic deposition under the second voltage U2 in the range of 6V≤U2≤10V, and the time range of the second electrostatic deposition is in the range of 60s to 90s, so as to form the second crystal nuclei 36 on the surface of the first DLC sub-film layer.

Optionally, electrification is performed so that the diamond particles in the second diamond nucleation liquid are evenly deposited on the surface of the first diamond-like sub-film layer, so that the surface of the first diamond-like sub-film layer is dispersed with second crystal nuclei 36 one by one.

Optionally, the second voltage U2 may be but not limited to 6V, 6.5V, 7V, 7.5V, 8V, 8.5V, 9V, 9.5V, 10V and so on. The higher the voltage of the second voltage U2, the faster the deposition speed of the diamond particles; when the second voltage is too high (such as higher than 10V), it is easy to enrich the diamond particles too much, and the particle size of the second crystal nuclei 36 formed is uneven, so that the finally obtained protective layer 30 has a heterochromatic phenomenon. When the second voltage is too low (such as lower than 6V), the deposition of diamond particles takes a long time, which affects the production efficiency, and it is easy to make the deposition of diamond particles insufficient, which affects the surface structure of the prepared protective layer 30, thereby affecting the self-cleaning, waterproof, anti-oil and anti-fingerprint performance of the cover plate 100.

Optionally, the time for the second electrostatic deposition may be, but not limited to, 60s, 65s, 70s, 75s, 80s, 85s, 90s and so on. When the second electrostatic deposition time is too long (for example higher than 90s), it is easy to enrich the diamond particles too much, and the particle size of the formed second crystal nuclei 36 is not uniform, so that the finally obtained protective layer 30 has heterochromatic phenomenon. When the second electrostatic deposition time is too short (for example, less than 60s), the deposition of diamond particles is not enough, which affects the surface structure of the prepared protective layer 30, thereby affecting the self-cleaning, waterproof, oil-proof and anti-fingerprint properties of the cover plate 100.

S305, deposit diamond-like carbon on the surface of the second crystal nucleus 36 to obtain a second diamond-like sub-film layer, wherein the protective layer 30 includes a first diamond-like sub-film layer and a second diamond-like sub-film layer, the first diamond-like sub-film layer and the second diamond-like sub-film layer.

Optionally, the cover plate body with the first diamond-like sub-film layer obtained in S304 is set in the HFCVD equipment, and methane and hydrogen are fed as reaction gases. The methane is the third flow rate, the hydrogen gas is the fourth flow rate, the temperature of the reaction gas is the third temperature, and the temperature of the cover plate body 10 is the fourth temperature. The hot-wire chemical vapor deposition method is used under the second pressure. The diamond-like carbon is deposited on the surface of the second crystal nucleus 36 for a second time to obtain a second diamond-like sub-film layer, wherein, The third flow rate is 30SCCM to 50SCCM, the fourth flow rate is 650SCCM to 750SCCM, the third temperature is 2450°C to 2650°C, the fourth temperature is 750°C to 850°C, the second pressure is 1.8KPa to 2.2KPa, and the second time is 50min to 80min.

When hydrogen and methane enter the reaction chamber of the HFCVD equipment through the spray ring and flow through the hot wire heated by electric heating, they decompose into atomic hydrogen and various hydrocarbon groups on the surface and nearby. Under the high temperature of the hot wire, the hydrocarbon groups provide the precursors for the deposition of the diamond film and adhere to the surface of the first diamond-like sub-film layer at an appropriate temperature. The surface of the first diamond-like sub-film layer has the position of the second crystal nucleus 36, and the diamond-like carbon will be enriched with the second crystal nucleus 36 as the center, so that the surface of the second diamond-like carbon-like film layer finally obtained forms approximately hemispherical protrusions. Optionally, the inside of the sample stage carrying the cover plate body 10 is fed with cooling circulating water to cool down the temperature, and the reacted gas is pumped out from the gas outlet by a mechanical pump.

The third flow rate can be any value between 30 SCCM and 50 SCCM. Specifically, it may be, but not limited to, 30SCCM, 32SCCM, 35SCCM, 38SCCM, 40SCCM, 43SCCM, 47SCCM, 50SCCM, etc. If the third flow rate of methane is too small, the diamond-like carbon deposited on the surface of the cover body 10 is not enough, which reduces the uniformity of the formed second diamond-like carbon sub-film layer, and finally affects the surface structure of the prepared protective layer 30, thereby affecting the hydrophobicity of the protective layer 30. If the third flow rate of methane is too high, the reaction of methane will be incomplete, and the methane will eventually be discharged from the reaction system, which increases the manufacturing cost of the cover plate 100 . When the third flow rate is 30SCCM to 50SCCM, it can not only make the formed second diamond-like sub-film layer have better uniformity, but also avoid waste caused by incomplete methane reaction and direct discharge.

The fourth flow rate can be any value between 650SCCM and 750SCCM. Specifically, it may be, but not limited to, 650SCCM, 660SCCM, 670SCCM, 680SCCM, 690SCCM, 700SCCM, 710SCCM, 720SCCM, 730SCCM, 740SCCM, 750SCCM, etc. The flow rate of hydrogen gas is too low, which will affect the deposition speed of the second diamond-like sub-film layer and reduce the production efficiency. If the flow rate of hydrogen is too fast, a large amount of hydrogen is directly discharged without participating in the reaction, which causes waste and increases the cost of raw materials. When the fourth flow rate is 650SCCM to 750SCCM, the second diamond-like sub-film layer can have a moderate deposition rate, and the waste caused by incomplete hydrogen reaction and direct discharge can be avoided.

The third temperature may be any value between 2450°C and 2650°C. Specifically, it may be, but not limited to, 2450°C, 2480°C, 2500°C, 2530°C, 2550°C, 2575°C, 2600°C, 2625°C, 2650°C, etc. The temperature of the gas is too low to reach the activation temperature of methane, and methane and hydrogen cannot react to form a diamond-like structure. The temperature of the gas is too high, which requires high equipment requirements and causes energy waste. When the third temperature is 2450° C. to 2650° C., methane can be fully activated to react with hydrogen to form a diamond-like structure, and energy waste can be avoided.

The fourth temperature may be, but not limited to, 750°C, 775°C, 800°C, 825°C, 850°C, and the like. If the fourth temperature is too low, the adhesion of the second diamond sub-film layer will be reduced; if the fourth temperature is too high, the cover body 10 will be easily deformed, which will affect the strength of the final cover 100 . When the fourth temperature is between 750°C and 850°C, the adhesion of the second diamond-like sub-film layer on the surface of the first diamond-like sub-film layer can be improved, and finally the adhesion of the protective layer 30 on the surface of the cover body 10 can be improved, and the cover body 10 can be prevented from being deformed and its strength reduced.

The second pressure may be, but not limited to, 1.8KPa, 1.85KPa, 1.9KPa, 1.95KPa, 2.0KPa, 2.05KPa, 2.1KPa, 2.15KPa, 2.2KPa, etc. The greater the second pressure, the more uniform the deposition of diamondoid. However, the second pressure is too high, which requires high equipment and has the risk of explosion. Due to the large difference in the density of methane and hydrogen, methane is easy to sink, and the second pressure is too small, which easily makes the distribution of methane and hydrogen uneven, and finally makes the deposition of diamondoid on the surface of the cover body 10 uneven, and finally affects the surface structure of the prepared protective layer 30, thereby affecting the hydrophobicity of the protective layer 30.

The second time may be, but not limited to, 50 min, 55 min, 60 min, 65 min, 70 min, 75 min, 80 min and so on. If the second time is too long, the first diamond-like sub-film layer formed is too thick, so that the thickness of the finally formed protective layer 30 is relatively large, which affects the light transmittance of the cover plate 100 . If the second time is too short, the formed first DLC sub-film layer is too thin, which may easily cause uneven distribution of DLC, and the finally obtained protective layer 30 will produce heterochromatic phenomenon.

The preparation method of this embodiment uses two times of electrostatic deposition and two times of hot wire chemical vapor deposition to form a protection layer 30 (that is, a diamond-like film layer) having a bionic structure similar to a lotus leaf with ups and downs on the surface of the cover body 10, so that the range of the water contact angle θ1 on the surface of the protection layer 30 is 120°≤θ1≤130°, and has good hydrophobicity, so that the prepared cover plate 100 has good waterproof, antifouling and anti-fingerprint properties, and has high hardness and good wear resistance. , not easy to wear, after a long time of use, it still has good self-cleaning, waterproof, anti-fouling and anti-fingerprint and other properties.

For a detailed description of the same features of this embodiment and the above embodiment, please refer to the above embodiment, and details are not repeated here.

Please refer to FIG. 11 , the embodiment of the present application also provides a method for preparing a cover plate 100, which includes:

S401, providing the cover body 10;

S402, performing a first electrostatic deposition on the cover body 10 in the first diamond nucleation solution, so as to form a first crystal nucleus 32 on the surface of the cover body 10;

S403, depositing diamond-like carbon on the surface of the first crystal nucleus 32 to obtain a first diamond-like carbon sub-film layer;

For the detailed description of step S401 to step S403, please refer to the description of the corresponding part of the above embodiment, and details are not repeated here.

S404, performing oxidation treatment in an oxidation solution.

Optionally, immerse in an oxidation solution at 70° C. to 90° C. for 7 minutes to 17 minutes, and perform oxidation treatment to remove impurities on the surface of the first diamond-like sub-film layer and form a passivation layer on the surface of the first diamond-like sub-film layer; wherein the oxidation solution is an aqueous solution including hydrogen peroxide and ammonia water. Then, in a 28KHZ ultrasonic environment, use a neutral cleaning solution such as ketone to clean for 10 to 20 minutes, and then dry.

Optionally, the temperature of the oxidation solution may be, but not limited to, 70°C, 72°C, 75°C, 78°C, 80°C, 83°C, 85°C, 88°C, 90°C. The oxidation treatment time may be, but not limited to, 7 min, 9 min, 11 min, 13 min, 15 min, 17 min and so on.

Optionally, the oxidation solution includes 30wt% hydrogen peroxide aqueous solution, ammonia water and water in a volume ratio of (0.5 to 1.5):(0.5 to 1.5):(3 to 7). In a specific embodiment, in the oxidation solution, the volume ratio of 30 wt % hydrogen peroxide aqueous solution, ammonia water and water is 1:1:5.

S405, performing a second electrostatic deposition in the second diamond nucleation solution to form a second crystal nucleus 36 on the surface of the first diamond-like sub-film layer; and

S406, depositing diamond-like carbon on the surface of the second crystal nucleus 36 to obtain a second diamond-like sub-film layer, wherein the protection layer 30 includes a first diamond-like carbon sub-film layer and a second diamond-like carbon sub-film layer.

For the detailed description of step S405 and step S406, please refer to the description of the corresponding part of the above embodiment, and details are not repeated here.

Please refer to FIG. 12 , the embodiment of the present application also provides a method for preparing a cover plate 100, which includes:

S501, providing the cover body 10;

S502, performing a first electrostatic deposition on the cover body 10 in a first diamond nucleation solution, so as to form a first crystal nucleus 32 on the surface of the cover body 10;

S503, depositing diamond-like carbon on the surface of the first crystal nucleus 32 to obtain a first diamond-like carbon sub-film layer;

S504, performing oxidation treatment in an oxidation solution.

S505, performing a second electrostatic deposition in the second diamond nucleation solution to form a second crystal nucleus 36 on the surface of the first diamond-like sub-film layer; and

S506, depositing diamond-like carbon on the surface of the second crystal nucleus 36 to obtain a second diamond-like sub-film layer, wherein the protection layer 30 includes a first diamond-like carbon sub-film layer and a second diamond-like carbon sub-film layer.

For the detailed description of step S501 and step S506, please refer to the description of the corresponding part of the above embodiment, and details are not repeated here.

S507, forming a protective layer 50 on the surface of the protective layer 30 away from the cover body 10 .

Optionally, the surface of the protective layer 30 is bombarded with plasma to remove the oxide layer on the surface of the protective layer 30, and the dyne value on the surface of the protective layer 30 is increased to more than 60Dyn (such as 60Dyn, 63Dyn, 65Dyn, etc.), so as to enhance the adhesion of the protective layer 30 on the protective layer 30. Next, cover the surface of the protective layer 30 with dry n-hexane, add perfluorodecyltrichlorosilane (3mol/L), and react in a nitrogen atmosphere for 5h to 7h to form a layer of silicon fluoride (protective layer 50) on the surface of the protective layer 30. At the end, remove the reaction solution in a nitrogen atmosphere, wash it several times with hexane, and dry it in mild nitrogen to obtain a protective layer 50, wherein the protective layer includes silicon fluoride.

The cover plate 100 of the embodiment of the present application will be further described below through specific examples.

Example 1

The cover plate 100 of this embodiment is prepared through the following steps:

1) Provide a cover plate body 10, the cover plate body 10 is a glass substrate;

2) Put the glass base material in the first diamond nucleation solution, ultrasonically vibrate for 30 minutes in a 28KHZ ultrasonic environment, and carry out the first electrostatic deposition for 3 minutes at a first voltage of 20V to form a first crystal nucleus 32 on the surface of the cover body 10; wherein, in the first diamond nucleation solution, the average particle diameter of diamond particles is 2.5 μm, the mass concentration of diamond is 0.05%, and the pH value is 5;

3) 2) is put into HFCVD equipment, feed methane and hydrogen as reaction gas, methane flow rate is 40SCCM, hydrogen flow rate is 700SCCM, first pressure is 2.0Kpa, the temperature of described reaction gas is 2500 DEG C, the temperature of described glass substrate is 800 DEG C, reaction 1h, to form the first diamond-like carbon film layer on the surface of glass substrate;

4) The glass substrate with the first diamond-like sub-film layer is ultrasonically vibrated for 30 minutes in a 28KHZ ultrasonic environment in the second diamond nucleation liquid, and the second electrostatic deposition is carried out for 80 s at a second voltage of 8V to form a second crystal nucleus 36 on the surface of the first diamond-like sub-film layer; wherein, in the second diamond nucleation liquid, the average particle diameter of the diamond particles is 200nm, the mass concentration of diamond is 0.05%, and the pH value is 3;

5) Put 4) into HFCVD equipment, feed methane and hydrogen as reaction gases, the flow rate of methane is 40SCCM, the flow rate of hydrogen is 700SCCM, the second pressure is 2.0Kpa, the temperature of the reaction gas is 2500°C, the temperature of the cover plate body 10 is 800°C, and react for 1h to form a second diamond-like sub-film layer on the surface of the first diamond-like sub-film layer to form a protective layer 30, and the protective layer 30 includes the first diamond-like sub-film layer and the second diamond-like sub-film layer.

The microscope topography images of the surface of the protective layer 30 of the cover plate 100 obtained in the embodiment are shown in FIG. 13 and FIG. 14 . Wherein, FIG. 13 is a micrograph of the surface topography of the protective layer 30 of this embodiment, and FIG. 14 is an enlarged view of the box in FIG. 13 . According to microscope measurement, the thickness of the protection layer 30 is 5 μm, the d1 of the protrusion structure 31 is 3 μm to 5 μm, and the d2 of the sub-protrusions 311 is in the range of 50 nm to 100 nm. The water contact angle on the surface of the protective layer 30 measured by a water contact angle measuring instrument is 125°.

Comparative example 1

In this comparative example, the cover body 10 of Example 1 is used as the cover 100 for comparison, wherein the cover body 10 is a glass substrate.

The following performance tests were carried out on the cover plate 100 of Example 1 and Comparative Example 2:

1) Visible-ultraviolet light transmittance and infrared light transmittance test, the test structure is shown in Figure 15 and Figure 16.

2) Abrasion resistance test: For the surface with the protective layer 30 in Example 1 and the surface of the cover plate 100 in Comparative Example 1, 170# zircon sand was used. At a pressure of 170Kpa, the angle between the nozzle and the cover plate 100 was 45°, and the distance between the nozzle and the cover plate 100 was 5 cm. Sandblasting was carried out for 1 minute, and the surface morphology after sandblasting was observed with a microscope. The test results are shown in Figures 17 and 18.

It can be seen from FIG. 15 that the transmittance of the cover plate 100 of Example 1 in the range of visible light and ultraviolet light is slightly lower than that of the cover plate 100 of Comparative Example 1 in the range of visible light and ultraviolet light, but still has a relatively high transmittance, and the transmittance between 225nm and 800nm is above 80%. This shows that the protective layer 30 of the present application will not affect the transmittance of the cover plate 100 in the visible-ultraviolet band, and will not affect the display effect of the display screen when applied to the protective cover of the display screen of electronic equipment.

It can be seen from FIG. 16 that the transmittance of the cover plate 100 of Example 1 in the infrared light band is slightly higher than that of the cover plate 100 of Comparative Example 1 in the infrared light band, and the transmittance between 1000nm and 3500nm is above 80%. This shows that the protective layer 30 of the present application will not affect the transmittance of the cover plate 100 in the infrared band, and will not affect the detection accuracy of the infrared sensor under the protective cover when applied to electronic equipment.

Please refer to FIG. 17 and FIG. 18 , (a) in FIG. 17 is the microscope topography of the cover plate 100 of the embodiment 1 before sandblasting, and FIG. 17 (b) is the microscope topography of the cover plate 100 of the embodiment 1 after the sandblasting test. (a) of FIG. 18 is a microscope topography of the cover plate 100 of Comparative Example 1 before sandblasting, and FIG. 18 (b) is a microscope topography of the cover plate 100 of Comparative Example 1 after sandblasting. It can be seen from (b) in FIG. 17 and (b) in FIG. 18 that the cover plate 100 obtained in Example 1 has higher wear resistance than the cover plate body 10 (glass substrate). After a long period of use, it is not easy to be worn out, and loses various properties such as self-cleaning, waterproof, anti-fouling and anti-fingerprint.

Referring to FIG. 19 to FIG. 21 , the embodiment of the present application is also an electronic device 600 , the electronic device 600 includes: a display component 610 , the cover plate 100 described in the embodiment of the present application, and a circuit board component 630 . The display assembly 610 is used for displaying; the cover plate 100 is arranged on one side of the display assembly 610; the circuit board assembly 630, the circuit board assembly 630 is electrically connected with the display assembly 610, and is used to control the display assembly 610 to display.

The electronic device 600 in the embodiment of the present application may be, but not limited to, a mobile phone, a tablet computer, a notebook computer, a desktop computer, a smart bracelet, a smart watch, an e-reader, a game console and other electronic devices.

Optionally, the display assembly 610 may be, but not limited to, one or more of a liquid crystal display assembly, a light emitting diode display assembly (LED display assembly), a micro light emitting diode display assembly (Micro LED display assembly), a submillimeter light emitting diode display assembly (Mini LED display assembly), an organic light emitting diode display assembly (OLED display assembly) and the like.

In some embodiments, the cover plate 100 is used as a protective cover of the display assembly 610 . At this time, the cover plate 100 is disposed on the display surface of the display assembly 610 , and the circuit board assembly 630 is disposed on a side of the display assembly 610 away from the cover plate 100 .

For a detailed description about the cover plate 100 , please refer to the description of the corresponding part of the above embodiment, and details are not repeated here.

Please also refer to FIG. 21 , optionally, the circuit board assembly 630 may include a processor 631 and a memory 633 . The processor 631 is electrically connected to the display component 610 and the memory 633 respectively. The processor 631 is used to control the display component 610 to display, and the memory 633 is used to store the program code required for the operation of the processor 631, the program code required for controlling the display component 610, the display content of the display component 610, and the like.

Optionally, the processor 631 includes one or more general-purpose processors 631, wherein the general-purpose processor 631 may be any type of device capable of processing electronic instructions, including a central processing unit (Central Processing Unit, CPU), a microprocessor, a microcontroller, a main processor, a controller, and an ASIC or the like. The processor 631 is used to execute various types of digitally stored instructions, such as software or firmware programs stored in the memory 633, which enable the computing device to provide a wide variety of services.

Optionally, the memory 633 can include a volatile memory (Volatile Memory), such as a random access memory (Random Access Memory, RAM); the memory 633 can also include a non-volatile memory (Non-Volatile Memory, NVM), such as a read-only memory (Read-Only Memory, ROM), a flash memory (Flash Memory, FM), a hard disk (Hard Disk Drive, HDD) or a solid-state disk (Solid-State Drive, SSD). The memory 633 may also include a combination of the above-mentioned kinds of memories.

Please refer to FIG. 20 and FIG. 22 together. In some embodiments, the electronic device 600 of the embodiment of the present application further includes a middle frame 620 , a casing 640 and a camera module 650 . The casing 640 is disposed on a side of the display assembly 610 away from the cover 100 . The middle frame 620 and the casing 640 form an accommodating space, and the accommodating space is used for accommodating the circuit board assembly 630 and the camera module 650 . The camera module 650 is electrically connected to the processor 631 for taking pictures under the control of the processor 631 .

Optionally, the housing 640 has a light-transmitting portion 641 through which the camera module 650 can take pictures. That is, the camera module 650 in this embodiment is a rear camera module 650 . It can be understood that, in other implementation manners, the light-transmitting portion 641 may be disposed on the display assembly 610 , that is, the camera module 650 is a front-facing camera module 650 . In the schematic diagram of this embodiment, the light-transmitting portion 641 is used as an opening for illustration. In other embodiments, the light-transmitting portion 641 may not be an opening, but a light-transmitting material, such as plastic or glass.

It can be understood that the electronic device 600 described in this embodiment is only a form of the electronic device to which the cover 100 is applied. In other embodiments, the cover 100 can also be used as the back cover (that is, the housing) of the electronic device, which should not be construed as a limitation to the electronic device 600 provided in this application, nor should it be understood as a limitation to the cover 100 provided in various embodiments of the present application.

References in this application to "an embodiment" and "an implementation" mean that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the present application. The appearances of a phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is understood explicitly and implicitly by those skilled in the art that the embodiments described in this application can be combined with other embodiments. In addition, it should also be understood that the features, structures or characteristics described in the various embodiments of the present application can be combined arbitrarily to form another embodiment without departing from the spirit and scope of the technical solution of the present application if there is no contradiction between them.

Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application without limitation. Although the present application has been described in detail with reference to the above preferred embodiments, those of ordinary skill in the art should understand that the technical solutions of the present application can be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present application.

Claims

A cover plate, characterized in that it comprises:

the cover body; and

A protective layer, the protective layer is arranged on the surface of the cover body, the protective layer is a diamond-like film layer, and the range of the water contact angle θ1 of the protective layer is 120°≤θ1≤130°.
The cover plate according to claim 1, wherein the protection layer has a plurality of protrusion structures, the plurality of protrusion structures are located on the surface of the protection layer away from the cover body, and each of the protrusion structures has a plurality of sub-protrusions located on the surface of the protrusion structure.
The cover plate according to claim 1, wherein the protection layer comprises a plurality of first crystal nuclei, a first deposition layer, a plurality of second crystal nuclei and a second deposition layer, the plurality of first crystal nuclei are arranged at intervals on the surface of the cover plate body, the first deposition layer covers the surface of the plurality of first crystal nuclei, the plurality of second crystal nuclei are arranged on the surface of the first deposition layer away from the first crystal nuclei, and the second deposition layer covers the surfaces of the plurality of second crystal nuclei, wherein the first crystal nuclei and the first deposition layer form a first protective sublayer, and the first protective sublayer is of the first type In the diamond sub-film layer, the second crystal nucleus and the second deposition layer form a second protective sub-layer, and the second protective sub-layer is a second diamond-like sub-film layer.
The cover plate according to claim 3, wherein the first crystal nucleus is a first diamond nucleus, and the second crystal nucleus is a second diamond nucleus; the first deposition layer is a diamond-like film layer, and the second deposition layer is a diamond-like film layer.
The cover plate according to claim 2, wherein the thickness h1 of the protective layer is in the range of 5 μm≤h1≤10 μm; the maximum distance d1 of the area surrounded by the orthographic projection of the raised structure on the surface of the protective layer is in the range of 3 μm≤d1≤7 μm; the distance d2 between the two furthest points on the sub-protrusions is in the range of 40nm≤d2≤2 μm.
The cover plate according to claim 1, wherein the visible light transmittance of the cover plate is greater than or equal to 80%, the infrared light transmittance of the cover plate is greater than or equal to 80%, and the ultraviolet light transmittance of the cover plate is greater than or equal to 80%.
The cover plate according to any one of claims 1-6, wherein the cover plate body comprises at least one of glass, ceramics or sapphire.
A cover plate, characterized in that it comprises:

the cover body; and

A protective layer, the protective layer is arranged on the surface of the cover body, the protective layer is a diamond-like film layer, the protective layer has a plurality of protrusion structures, the plurality of protrusion structures are located on the surface of the protective layer away from the cover body, and each of the protrusion structures has a plurality of sub-protrusions located on the surface of the protrusion structure.
The cover plate according to claim 8, wherein the protection layer comprises a plurality of first crystal nuclei, a first deposition layer, a plurality of second crystal nuclei, and a second deposition layer, the plurality of first crystal nuclei are arranged at intervals on the surface of the cover plate body, the first deposition layer covers the surface of the plurality of first crystal nuclei, the plurality of second crystal nuclei are arranged on the surface of the first deposition layer away from the first crystal nuclei, and the second deposition layer covers the surfaces of the plurality of second crystal nuclei, wherein the first crystal nuclei and the first deposition layer form a first protective sublayer, and the first protective sublayer is of the first type In the diamond sub-film layer, the second crystal nucleus and the second deposition layer form a second protective sub-layer, and the second protective sub-layer is a second diamond-like sub-film layer.
The cover plate according to claim 8, wherein the thickness h1 of the protective layer is in the range of 5 μm≤h1≤10 μm; the maximum distance d1 of the area surrounded by the orthographic projection of the raised structure on the surface of the protective layer is in the range of 3 μm≤d1≤7 μm; the distance d2 between the two furthest points on the sub-protrusions is in the range of 40nm≤d2≤2 μm.
The cover plate according to claim 8, wherein the visible light transmittance of the cover plate is greater than or equal to 80%, the infrared light transmittance of the cover plate is greater than or equal to 80%, and the ultraviolet light transmittance of the cover plate is greater than or equal to 80%.
The cover plate according to any one of claims 8-11, wherein the cover plate body comprises at least one of glass, ceramics or sapphire.
A method for preparing a cover plate, characterized in that it comprises:

Provide the cover body; and

A protective layer is formed on the surface of the cover body, wherein the protective layer is a diamond-like film layer, and the range of the water contact angle θ1 of the protective layer is 120°≤θ1≤130°.
The preparation method of the cover plate according to claim 13, wherein the formation of a protective layer on the surface of the cover plate body comprises:

Carrying out the first electrostatic deposition of the cover plate body in the first diamond nucleation liquid to form a first crystal nucleus on the surface of the cover plate body, the first crystal nucleus being the first diamond crystal nucleus;

Depositing diamond-like carbon on the surface of the first crystal nucleus to obtain a first diamond-like carbon sub-film layer;

In the second diamond nucleation liquid, carry out the second electrostatic deposition, to form a second crystal nucleus on the surface of the first diamond-like sub-film layer, the second crystal nucleus is the second diamond crystal nucleus; and

Deposit diamond-like carbon on the surface of the second crystal nucleus to obtain a second diamond-like sub-film layer, wherein the protective layer includes the first diamond-like sub-film layer and the second diamond-like sub-film layer, and the diamond-like film layer includes the first diamond-like sub-film layer and the second diamond-like sub-film layer.
The preparation method of the cover plate according to claim 14, wherein the electrodeposition of the cover plate body in the first diamond nucleation liquid to form a first crystal nucleus on the surface of the cover plate body comprises:

Place the cover plate body in the first diamond nucleation liquid with an average diamond particle size ranging from 1 μm to 4 μm, a diamond mass concentration ranging from 0.02% to 0.06%, and a pH value of 4.5 to 5.5, and perform ultrasonic waves; and

The first electrostatic deposition is performed under the range of the first voltage U1 of 15V≤U1≤25V, and the time range of the first electrostatic deposition is 2min to 4min, so as to form a first crystal nucleus on the surface of the cover body.
The preparation method of the cover plate according to claim 14, characterized in that, in the second diamond nucleation liquid, the second electrostatic deposition is carried out to form a second crystal nucleus on the surface of the first diamond-like sub-film layer, comprising:

Ultrasound is carried out in the second diamond nucleation liquid whose average diamond particle size ranges from 30nm to 1 μm, the diamond mass concentration ranges from 0.02% to 0.06%, and the pH value is 3 to 4; and

The second electrostatic deposition is carried out under the second voltage U2 in the range of 6V≤U2≤10V, and the time range of the second electrostatic deposition is in the range of 60s to 90s, so as to form the second crystal nuclei on the surface of the first DLC sub-film layer.
The preparation method of the cover plate according to claim 14, characterized in that, after the deposition of diamond-like carbon on the surface of the first crystal nucleus to obtain the first diamond-like sub-film layer, the second electrostatic deposition is carried out in the second diamond nucleation liquid, so that before the second crystal nucleus is formed on the surface of the first diamond-like sub-film layer, the method also includes:

The oxidation treatment is carried out in an oxidation solution, wherein the oxidation solution is an aqueous solution including hydrogen peroxide and ammonia water.
According to the preparation method of the cover plate according to any one of claims 14 to 17, it is characterized in that, the deposition of diamond-like carbon on the surface of the first crystal nucleus, to obtain the first diamond-like carbon sub-film layer, comprising:

Using methane and hydrogen as the reaction gas, the methane is the first flow rate, the hydrogen is the second flow rate, the temperature of the reaction gas is the first temperature, the temperature of the cover body is the second temperature, and the hot wire chemical vapor deposition method is used under the first pressure to deposit diamond-like carbon on the surface of the first crystal nucleus for the first time to obtain the first diamond-like sub-film layer, wherein the first flow rate is 30SCCM to 50SCCM, the second flow rate is 650SCCM to 750SCCM, and the first temperature is 2450°C to 2650°C, the second temperature is 750°C to 850°C, the first pressure is 1.8KPa to 2.2KPa, and the first time is 50min to 80min.
The preparation method of the cover plate according to any one of claims 14 to 17, wherein the deposition of diamond-like carbon on the surface of the second crystal nucleus to obtain the second diamond-like carbon sub-film layer comprises:

Using methane and hydrogen as the reaction gas, the methane is the third flow rate, the hydrogen is the fourth flow rate, the temperature of the reaction gas is the third temperature, the temperature of the cover plate body is the fourth temperature, and the hot wire chemical vapor deposition method is used under the second pressure. The diamond-like carbon is deposited on the surface of the second crystal nucleus for a second time to obtain a second diamond-like sub-film layer, wherein the third flow rate is 30SCCM to 50SCCM, the fourth flow rate is 650SCCM to 750SCCM, and the third temperature is 2450°C to 2650°C, the fourth temperature is 750°C to 850°C, the second pressure is 1.8KPa to 2.2KPa, and the second time is 50min to 80min.
An electronic device, characterized in that it comprises:

display components;

Cover plate, the cover plate is arranged on one side of the display assembly; the cover plate includes a cover plate body and a protective layer, the protective layer is arranged on the surface of the cover plate body, and the protective layer is a diamond-like film layer; the protective layer satisfies at least one of the following conditions: the water contact angle θ1 of the protective layer is in the range of 120°≤θ1≤130°; Multiple sub-protrusions of the surface; and

A circuit board assembly, the circuit board assembly is electrically connected to the display assembly, and is used to control the display assembly to display.