WO2023129142A1 - Systèmes de fabrication de dispositif électronique ayant des chambres de dépôt appariées pour une uniformité de dépôt améliorée - Google Patents

Systèmes de fabrication de dispositif électronique ayant des chambres de dépôt appariées pour une uniformité de dépôt améliorée Download PDF

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Publication number
WO2023129142A1
WO2023129142A1 PCT/US2021/065410 US2021065410W WO2023129142A1 WO 2023129142 A1 WO2023129142 A1 WO 2023129142A1 US 2021065410 W US2021065410 W US 2021065410W WO 2023129142 A1 WO2023129142 A1 WO 2023129142A1
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WO
WIPO (PCT)
Prior art keywords
deposition chamber
deposition
substrate
chamber
section
Prior art date
Application number
PCT/US2021/065410
Other languages
English (en)
Inventor
Jeffrey KHO
Shinichi Kurita
Jinsong XIAO
Jianhua Zhou
Lai ZHAO
Soo Young Choi
Kwang Soo Huh
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/US2021/065410 priority Critical patent/WO2023129142A1/fr
Publication of WO2023129142A1 publication Critical patent/WO2023129142A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating

Definitions

  • the instant specification generally relates to electronic device fabrication. More specifically, the instant specification relates to electronic device manufacturing systems having paired deposition chambers for enhanced deposition uniformity.
  • An electronic device manufacturing system can include multiple chambers, such as process chambers and load lock chambers. Such an electronic device manufacturing system can employ a robot apparatus in the transfer chamber that is configured to transport substrates between the multiple chambers. In some instances, multiple substrates are transferred together.
  • a system in accordance with an embodiment, includes a first deposition chamber having a unidirectional crossflow design to provide a first process gas flow that proceeds in a first direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber.
  • the system further includes a second deposition chamber having a mirrored unidirectional crossflow design relative to the first deposition chamber to provide a second process gas flow that proceeds in a second direction opposite the first direction from a first section of the second deposition chamber located at a first end of the second deposition chamber to a second section of the second deposition chamber located at a second end of the second deposition chamber opposite the first end of the second deposition chamber.
  • the second end of the first deposition chamber is proximate to the second end of the second deposition chamber.
  • an electronic device manufacturing system includes a transfer chamber, a pair of process chambers interfacing with the transfer chamber, and a robot apparatus housed within the transfer chamber.
  • the pair of process chambers includes a first deposition chamber having a unidirectional crossflow design to provide a first process gas flow that proceeds in a first direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber.
  • the pair of process chambers further includes a second deposition chamber having a mirrored unidirectional crossflow design relative to the first deposition chamber to provide a second process gas flow that proceeds in a second direction opposite the first direction from a first section of the second deposition chamber located at a first end of the second deposition chamber to a second section of the second deposition chamber located at a second end of the second deposition chamber opposite the first end of the second deposition chamber.
  • the second end of the first deposition chamber is proximate to the second end of the second deposition chamber.
  • the robot apparatus is configured to place a substrate in the first deposition chamber, transfer the substrate from the first deposition chamber to the second deposition chamber after the substrate is processed in the first deposition chamber, and remove the substrate from the second deposition chamber after the substrate is processed in the second deposition chamber.
  • a method includes placing a substrate in a first deposition chamber of an electronic device manufacturing system, processing the substrate in the first deposition chamber utilizing a first process gas flow that proceeds in a first direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber, after processing the substrate in the first deposition chamber, transferring the substrate to a second deposition chamber of the electronic device manufacturing system, and processing the substrate in the second deposition chamber utilizing a second process gas flow that proceeds in a second direction opposite the first direction from a first section of the second deposition chamber located at a first end of the second deposition chamber to a second section of the second deposition chamber located at a second end of the second deposition chamber opposite the first end of the second deposition chamber.
  • the first deposition chamber has a unidirectional crossflow design
  • the second deposition chamber has a mirrored unidirectional crossflow design relative to the first deposition chamber.
  • the second end of the first deposition chamber is proximate to the second end of the second deposition chamber.
  • FIG. 1 is cross-sectional view of an example deposition chamber, in accordance with some embodiments.
  • FIG. 2A is a cross-sectional view of an example section of a deposition chamber, in accordance with some embodiments.
  • FIG. 2B is a close-up view of the section of FIG. 2A, in accordance with some embodiments.
  • FIG. 3 is top-down view of an example electronic device manufacturing system having paired deposition chambers for enhanced deposition uniformity, in accordance with some embodiments.
  • FIG. 4 is a flow chart of a method for implementing an electronic device manufacturing system having paired deposition chambers for enhanced deposition uniformity, in accordance with some embodiments.
  • a process chamber is a deposition chamber, such as a thin film deposition chamber, in which a material is deposited over a substrate resting on a platform in the deposition chamber.
  • the substrate can be a glass substrate.
  • a process chamber is as an atomic layer deposition (ALD) chamber.
  • ALD atomic layer deposition
  • material can be deposited by employing a unidirectional cross flow.
  • the substrate can be secured by a reactor frame.
  • the reactor frame is designed to secure a substrate disposed on a susceptor upon loading of the substrate within the reactor, and provide the material deposition (e.g., film deposition) boundary for the deposition process.
  • a susceptor includes a material that can either heat or cool the substrate disposed thereon to a temperature within a certain range. Susceptor design (e.g., material choice) can depend on the reactor operating temperature(s).
  • the reactor frame is a mask frame or a shadow frame.
  • a mask frame or a shadow frame is designed to hold a substrate in place during the deposition process and can function as a stencil to define the film deposition boundary area on the substrate.
  • a mask frame can be used for smaller electronic devices, such as mobile phones, while a shadow frame can be used for larger electronic devices, such as televisions.
  • a flow guide can be used to direct process gas flow either into, or out of, the reactor.
  • Deposition is typically performed in a process chamber by flowing a process gas over the substrate from a first side of the process chamber to a second side of the process chamber opposite the first side.
  • the process gas can include chemical precursors that react at the surface of the substrate to deposit material layers on the substrate.
  • the reaction of the chemical precursors at the substrate surface can result in a change in gas composition due to the depletion of the chemical precursors in the direction of gas flow. This can lead to reduced uniformity (e.g., a deposition gradient) as a function of distance from the first side of the deposition chamber. Accordingly, this depletion phenomenon can negatively affect material quality.
  • a process gas can flow from a first side of a substrate to a second side of the substrate for a certain number of deposition cycles (e.g., half of the total number of deposition cycles). Then, the substrate can be rotated so that the process gas flows from the second side of the substrate to the first side of the substrate for the remaining number of deposition cycles. That is, the rotation of the substrate can have the effect of averaging out the reach on/depleti on rate to support process uniformity (e.g., deposition uniformity or etch uniformity) along the entire surface of the substrate.
  • process uniformity e.g., deposition uniformity or etch uniformity
  • An electronic device processing system can include a number of process chambers.
  • the process chambers can include at least one pair of deposition chambers having mirrored process gas flows for depositing a material onto a substrate.
  • the process gas flows can be unidirectional crossflows.
  • the pair of deposition chambers can be a pair of ALD chambers.
  • a first deposition chamber of the pair can be configured to have a first process gas flow in a first direction from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber, while a second deposition chamber of the pair can be configured to have a second process gas flow in a second direction opposite the first direction from a first section of the second deposition chamber located at a first end of the second deposition chamber to a second section of the second deposition chamber located at a second end of the second deposition chamber opposite the first end of the second deposition chamber.
  • the electronic device processing system can further include a transfer chamber housing a robot apparatus, and at least one load lock chamber.
  • the robot apparatus is configured to transfer substrates between chambers (e.g., from one process chamber to another process chamber, from a process chamber to a load lock chamber, or from a load lock chamber to a process chamber).
  • the robot apparatus can place a substrate into the first deposition chamber to perform a first pass of a material deposition process.
  • the first pass can include a first number of deposition cycles with respect to the process gas flowing in the first direction.
  • the first number of deposition cycles can be half of the total number of deposition cycles.
  • the robot apparatus can remove the substrate from the first deposition chamber, and place the substrate into the second deposition chamber to perform a second pass of the material deposition process.
  • the second pass can include a second number of deposition cycles with respect to the process gas flowing in the second direction.
  • the second number of deposition cycles can be half of the total number of deposition cycles.
  • the substrate can be placed into the second deposition chamber without reversing the orientation of the ends of the substrate (e.g., without rotation) prior to placement in the second deposition chamber.
  • the robot apparatus can extend at least one arm into the first deposition chamber to obtain the substrate, retract the at least one arm to remove the substrate while maintaining the orientation of the substrate, rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the substrate within the second deposition chamber.
  • paired deposition chambers having mirrored process gas flows can enable improved gas flow distribution and uniformity without sacrificing Takt time and/or increased system footprint, as compared to other techniques (e.g., substrate rotation).
  • FIG. 1 is cross-sectional view of an example deposition chamber 100, in accordance with some embodiments.
  • the deposition chamber 100 can have a crossflow design that provides for unidirectional crossflow of process gases.
  • the deposition chamber 100 is an ALD chamber.
  • the deposition chamber 100 can include any suitable process chamber in accordance with the embodiments described herein.
  • the deposition chamber 100 includes a susceptor 110, a cathode 120, and a reactor area 130 between the susceptor 110 and the cathode 120.
  • the susceptor 110 is configured to receive a substrate 115, raise the substrate into the reactor area 130 to perform a deposition process, and maintain the substrate within the reactor area 130 during processing.
  • the susceptor 110 can be made of a suitable material that can heat and/or cool the substrate to a desired processing temperature. Examples of suitable materials for the susceptor 110 include aluminum (Al), stainless steel, and ceramic.
  • the susceptor 110 includes a ceramic material.
  • the susceptor 110 can include a silicon carbide (SiC) material.
  • the susceptor 110 can be provided with a protective coating to protect the susceptor 110 during processing.
  • the protective coating is a plasma-resistant coating.
  • the protective coating can include Y2O3 or other similar material.
  • plasma-resistant coatings include EnOs, Y3AI5O12 (YAG), E ⁇ AEOu (EAG), a composition comprising Y2O3 and ZrO2 (e.g., a Y2O3-ZrO2 solid solution), a composition comprising Y2O3, A12O3 and ZrO2 (e.g., a composition comprising Y4AI2O9 and a solidsolution of Y2O3-ZrO2), Y-O-F (e.g., Y5O4F7), YF3, and so on.
  • the coatings may have been deposited by line-of sight or non-line-of-sight deposition processes, such as ALD, CVD, physical vapor deposition (PVD
  • the cathode 120 can include any suitable conductive material in accordance with the embodiments described herein.
  • the cathode 120 can include aluminum (Al).
  • the cathode 120 can be provided with a protective coating to protect the cathode 120 during processing.
  • the protective coating is a plasma-resistant coating.
  • the protective coating can include Y2O3 or other similar material. Any of the other plasma-resistant coatings discussed herein may also be used to coat the cathode 120.
  • the deposition chamber 100 further includes a first section 140 and a second section 150.
  • first section 140 is shown on the left side of the deposition chamber 100 and the second section 150 is shown in the right side of the deposition chamber 100, such an arrangement should not be considered limiting.
  • the first section 140 is designed to support and flow a process gas flow into the reactor of the deposition chamber 100 for the deposition process.
  • the process gas flow can include gases that are introduced into the reactor to perform the particular process.
  • the process gas flow can be combined with a plasma (e.g., a plasma-enhanced deposition process).
  • the process gas can be used to form a plasma in the reactor, or a remote plasma may be formed and delivered into the reactor with the process gas.
  • the second section 150 is designed to remove or evacuate remnants of the process from the reactor, which can include residual gases (e.g., unreacted gases) and/or byproducts.
  • a flow guide of the first section 140 can provide a path for the process gas flow to be introduced into the reactor area 130, and a flow guide of the second section 150 (not shown) can provide a path for the remnants to flow out of the reactor area 130. Further details regarding the first section 150 will be described below with reference to FIGS. 2A-2B.
  • FIGS. 2A and 2B are cross-sectional views of an example section 200 of a deposition chamber, in accordance with some embodiments.
  • the deposition chamber has a crossflow design that provides for unidirectional crossflow of process gases.
  • the deposition chamber is an ALD chamber.
  • the section 200 can be the first section 140 described above with reference to FIG. 1.
  • a second section of a deposition chamber system e.g., the second section 150 described above with reference to FIG. 1 can have a similar arrangement of components.
  • the section 200 includes a portion of the susceptor 110, a portion of the cathode 120, and a portion of the reactor area 130 of FIG. 1.
  • the section 200 further includes a flow guide 210, a first insulator 220, a second insulator 230, a reactor interface (e.g., reactor lid) 240, a reactor frame 250, and a seal 260.
  • a second section e.g., second section 150 of FIG. 1) can also include a similar flow guide, first insulator, second insulator, reactor interface, the reactor frame 250, and a seal 260.
  • the flow guide 210 and the reactor interface 240 collectively provide a path 215 for the remnants of the deposition process (e.g., residual process gases and byproducts) to escape out of the reactor area 130.
  • the seal 260 forms a process gas containment seal that prevents the remnants from leaking or escaping, which can protect other components of the deposition chamber system from potential damage.
  • the first insulator 220 and the second insulator 230 are disposed in contact with the cathode 120 and the reactor interface 240 to prevent arcing from the cathode 120.
  • the first insulator 220 and the second insulator 230 can include different materials that have different properties.
  • the second insulator 230 can include a material that is less susceptible to melting by virtue of its location.
  • the first insulator 220 includes a nonstick material.
  • the nonstick material can be, e.g., polytetrafluoroethylene (PTFE) or other suitable nonstick material.
  • the second insulator 240 includes a ceramic material.
  • the reactor frame 250 is designed to secure the substrate 115 disposed on the susceptor 110 upon loading of the substrate 115 within the reactor area 130.
  • the reactor frame 250 can be any suitable reactor frame in accordance with the embodiments described herein.
  • the reactor frame 250 is a mask frame or shadow frame.
  • the substrate 115 may have a square or rectangular shape, or may have other shapes such as a disc shape or other polygonal shape.
  • the substrate 115 may be composed of, for example, a semiconductor body (e.g., a semiconductor wafer), a glass or ceramic body (e.g., a glass or ceramic coupon), a metal body, or some other type of material.
  • the section 200 can further include openings 270 and 280.
  • the seal 260 can be formed from an elastic object.
  • the seal 260 is a seal having a first end corresponding to a base 262 of the seal 260, and a second end corresponding to a compressive body 264 of the seal 260.
  • the seal 260 is designed to form the process gas containment seal upon compression of the seal 260 between the reactor interface 240 and the reactor frame 250.
  • the base 262 is mated with (e.g., inserted into) the reactor interface 240, such that the compressive body 264 is configured to contact the reactor frame 250 to form the process gas containment seal.
  • the compressive body 264 can be comprised of a compressive material having material properties (e.g., bulk modulus, Young’s modulus, compressive strength, Poisson’s ratio, hardness) suitable for forming a process gas containment seal without damaging the reactor frame and/or the reactor interface. More specifically, the compressive body 264 can be comprised of a compressive material having material properties that provide for a suitably low compression force that is below a force threshold and that will not cause damage to components of the deposition chamber system (e.g., the susceptor 110 and/or the reactor frame 250).
  • material properties e.g., bulk modulus, Young’s modulus, compressive strength, Poisson’s ratio, hardness
  • the compression distance of the compressive body 264 should be within a suitable range upon contact with the reactor frame 250 during formation of the process gas containment seal.
  • the compression distance is less than about 4 millimeters (mm).
  • the compression distance can be between about 2 mm and about 3 mm.
  • the compressive body may have a material and/or geometry that enable the compressive body to form a seal while maintaining a force that is less than the force threshold for a range of distances (e.g., over a range of +/-2 mm) between the reactor frame and the reactor interface.
  • the compressive body may maintain a force of between A and B within the range of distances between the reactor frame and the reactor interface.
  • the compressive material can be selected to maintain its properties and integrity in various environments.
  • the seal 260 can illustratively be formed from an elastic polymer (elastomer) or other material with elastic or rubber-like properties. More specifically, the seal 260 can include a saturated elastomer due to greater stability against potentially extreme environmental conditions.
  • friction between the compressive body 264 and the reactor frame 250 and/or the reactor lid 240 can result in an approximately horizontal force that can further secure the compressive body 264 against the reactor frame 250 and/or the reactor lid 240, thereby improving the process containment seal.
  • saturated elastomers include, but are not limited to, silicones (SI, Q, VMQ), fluorosilicones (FVMQ), fluoroelastomers (e.g., FKM and tetrafluoroethylene propylene (TFE/P)), and perfluoroelastomers (FFKM).
  • the compressive material comprises a perfluoropolymer (PFP) and/or a polyimide, which may retain its material properties at high temperature, and which may have resistance to erosion or corrosion caused by exposure to a plasma environment.
  • the base 262 and the compressive body 264 are formed from a same material, such that the seal 260 is a monolithic structure. However, the base 262 and the compressive body 264 can each be formed from different materials.
  • the base 262 may have a trapezoidal cross-sectional shape that secures the seal 260 to the reactor interface 240, and the compressive body 264 can include an annular cross-sectional shape (e.g., having a cross-section of a hollow circle).
  • the compressive body 264 can be an elastic O-ring (“O-ring”).
  • the compressive body 264 can include an elastic washer (“washer”).
  • the seal 260 can include any suitable geometry that can form a process gas containment seal.
  • FIG. 3 is top-down view of an electronic device manufacturing system 300, in accordance with some embodiments.
  • the system 300 includes a number of deposition chambers 310-1 through 310-6.
  • each deposition chamber 310-1 through 310-6 can be similar to the deposition chamber shown in FIGS. 1-2.
  • the system 300 can include any suitable number of process chambers.
  • the deposition chambers 310-1 through 310-6 include ALD chambers.
  • the system 300 includes a load lock chamber 320. Although one load lock chamber is shown in this illustrative example, the system 300 can include any suitable number of load lock chambers.
  • the deposition chambers 310-1 through 310-6 and 320 have ends corresponding to chamber openings that interface with a transfer chamber 330.
  • the transfer chamber 330 houses a robot apparatus 332, also referred to as a transfer robot.
  • the robot apparatus 332 can include one or more arms configured to transfer substrates between the deposition chambers 310-1 through 310-6 and 320.
  • the robot apparatus 332 is a SCARA (Selective Compliance Articulated Robot Arm) robot.
  • the system 300 can further include a factory chamber 340 housing a robot apparatus 342, also referred to as a factory interface robot.
  • a second end of the load lock chamber 320 interfaces with the factory chamber 340 to enable the robot apparatus 342 to access a substrate from the load lock chamber 320 after processing. This can allow for safe removal of the substrate from the system 300.
  • the deposition chambers 310-1 through 310-6 can be arranged into respective pairs of deposition chambers.
  • deposition chambers 310-1 and 310-2 form a first pair of deposition chambers 315-1
  • deposition chambers 310-3 and 310-4 form a second pair of deposition chambers 315-2
  • deposition chambers 310-5 and 310-6 form a third pair of deposition chambers 315-3.
  • Deposition chambers within each pair have mirrored designs relative to one another, such that the deposition chambers within each pair are configured to provide process gas flows that proceed in opposite directions (as noted by the arrows shown in FIG. 3).
  • the process gas flows can be unidirectional crossflows.
  • the deposition chamber 310-1 can utilize a first process gas flow that proceeds in a first direction from a first section of the deposition chamber 310-1 located at a first end of the deposition chamber 310-1 to a second section of the deposition chamber 310-1 located at a second end of the deposition chamber 310-1 opposite the first end of the deposition chamber 310-1
  • the deposition chamber 310-2 can utilize a second process gas flow that proceeds in a second direction opposite the first direction from a first section of the deposition chamber 310-2 located at a first end of the deposition chamber 310-2 to a second section of the deposition chamber 310-2 located at a second end of the deposition chamber 310-2 opposite the first end of the deposition chamber 310-2.
  • the first direction can be from right to left relative to the first and second sections of the process chamber 310-1
  • the second direction can be from left to right relative to the first and second sections of the process chamber 310-2.
  • the first and second sections of the deposition chamber 310-1 and the deposition chamber 310-2 are similar to the first and second sections 140 and 150, respectively, described above with reference to FIGS. 1-2.
  • a substrate is to be processed using the first pair of deposition chambers 315-1.
  • the robot apparatus 332 can place the substrate into the deposition chamber 310-1 or the deposition chamber 310-2, referred to as the first deposition chamber.
  • the substrate can then be processed in the first deposition chamber utilizing the corresponding process gas flow in the first direction (e.g., from right to left).
  • the processing performed in the first deposition chamber can be performed for a first pass having a first number of deposition cycles. In some embodiments, the first number of deposition cycles is equal to half of a total number of deposition cycles for processing the substrate.
  • the robot apparatus 332 can then transfer the substrate to the other one of the deposition chamber 310-1 or the deposition chamber 310-2, referred to as the second deposition chamber.
  • the substrate can be placed within the second deposition chamber without reversing the orientation of the ends of the substrate (e.g., without rotation) prior to placement in the second deposition chamber.
  • the robot apparatus 332 can extend at least one arm into the first deposition chamber to obtain the substrate, retract the at least one arm to remove the substrate while maintaining the orientation of the substrate, rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the substrate within the second deposition chamber.
  • the substrate can then be processed in the second deposition chamber utilizing the corresponding process gas flow in the second direction opposite the first direction (e.g., from left to right).
  • the processing performed in the second deposition chamber can be performed for a second pass having a second number of deposition cycles to complete the processing of the substrate.
  • the first number of deposition cycles is equal to half of the total number of deposition cycles for processing the substrate.
  • the robot apparatus 332 can remove the substrate from the second deposition chamber.
  • the robot apparatus 332 can extend the at least one arm into the second deposition chamber to obtain the substrate, and retract the at least one arm to remove the substrate while maintaining the orientation of the substrate.
  • the robot apparatus 332 can then place the substrate into another chamber.
  • the robot apparatus 332 can place the substrate into the load lock chamber 320 by rotating the at least one arm to align with the load lock chamber 320.
  • the substrate can then be retrieved from the load lock chamber 320 by the robot apparatus 342 for removal from the system 300.
  • the robot apparatus 332 can place the substrate in another process chamber for additional processing.
  • FIG. 4 depicts a flow chart of an example method 400 for implementing an electronic device manufacturing system having paired deposition chambers for enhanced deposition uniformity, in accordance with some embodiments.
  • a substrate is placed in in a first deposition chamber of an electronic device manufacturing system. More specifically, the substrate can be placed in the first deposition chamber by a robot apparatus housed in a transfer chamber that interfaces with the pair of deposition chambers (e.g., a transfer robot).
  • the first deposition chamber is an ALD chamber.
  • the substrate is processed in the first deposition chamber utilizing a first process gas flow that proceeds in a first direction.
  • the first process gas flow can correspond
  • the first process gas flow proceeds from a first section of the first deposition chamber located at a first end of the first deposition chamber to a second section of the first deposition chamber located at a second end of the first deposition chamber opposite the first end of the first deposition chamber.
  • the first direction is right to left. In some embodiments, the first direction is left to right.
  • the substrate is processed in the first deposition chamber for a first pass having a first number of deposition cycles. In some embodiments, the first number of deposition cycles is equal to half of a total number of deposition cycles for processing the substrate.
  • the substrate is transferred to a second deposition chamber of the electronic device manufacturing system.
  • the first and second deposition chambers collectively form a pair of deposition chambers, where the second deposition chamber has a mirrored design relative to the first deposition chamber, and the second end of the first deposition chamber is proximate to the second end of the second deposition chamber.
  • the substrate can be transferred to the second deposition chamber without reversing the orientation of the ends of the substrate (e.g., without rotation) prior to placement in the second deposition chamber.
  • the robot apparatus can extend at least one arm into the first deposition chamber to obtain the substrate, retract the at least one arm to remove the substrate while maintaining the orientation of the substrate, rotate the at least one arm to align with the second deposition chamber, and extend the at least one arm into the second deposition chamber to place the substrate within the second deposition chamber.
  • the second deposition chamber is an ALD chamber.
  • the substrate is processed in the second deposition chamber utilizing a second process gas flow that proceeds in a second direction opposite the first direction.
  • the second process gas flow can correspond to a unidirectional crossflow. More specifically, due to the mirrored design of the second deposition chamber, the second process gas flow proceeds from a first section of the second deposition chamber located at a first end of the second deposition chamber to a second section of the second deposition chamber located at a second end of the second deposition chamber opposite the first end of the second deposition chamber. For example, if the first direction is from right to left, then the second direction is from left to right (and vice versa).
  • the substrate is processed in the second deposition chamber for a second pass having a second number of deposition cycles. In some embodiments, the second number of deposition cycles is equal to half of the total number of deposition cycles for processing the substrate.
  • the substrate can be removed from the second deposition chamber. More specifically, the robot apparatus can remove the substrate from the second deposition chamber. In some embodiments, the robot apparatus can then place the substrate in a load lock chamber that interfaces with the transfer chamber. The load lock chamber can further interface with a factory chamber to enable safe removal of the substrate from the electronic device manufacturing system (e.g., using a second robot apparatus housed within the factory chamber). In some embodiments, the robot apparatus can place the substrate in another process chamber for further processing (e.g., deposition chamber, etch chamber). The method 400 can be repeated to process the same substrate or a different substrate. Further details regarding blocks 402-410 are described above with reference to FIGs. 1-3.

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Abstract

Un système selon la présente invention comprend une première chambre de dépôt ayant une conception de flux transversal unidirectionnelle pour fournir un premier flux de gaz de traitement qui avance dans une première direction à partir d'une première section de la première chambre de dépôt située au niveau d'une première extrémité de la première chambre de dépôt vers une seconde section de la première chambre de dépôt située au niveau d'une seconde extrémité de la première chambre de dépôt opposée à la première extrémité de la première chambre de dépôt. Le système comprend en outre une seconde chambre de dépôt ayant une conception de flux transversal unidirectionnelle en miroir par rapport à la première chambre de dépôt pour fournir un second flux de gaz de traitement qui avance dans une seconde direction opposée à la première direction à partir d'une première section de la seconde chambre de dépôt située au niveau d'une première extrémité de la seconde chambre de dépôt vers une seconde section de la seconde chambre de dépôt située au niveau d'une seconde extrémité de la seconde chambre de dépôt opposée à la première extrémité de la seconde chambre de dépôt. La seconde extrémité de la première chambre de dépôt est proche de la seconde extrémité de la seconde chambre de dépôt.
PCT/US2021/065410 2021-12-28 2021-12-28 Systèmes de fabrication de dispositif électronique ayant des chambres de dépôt appariées pour une uniformité de dépôt améliorée WO2023129142A1 (fr)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US20140242810A1 (en) * 2013-02-27 2014-08-28 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method of supplying and exhausting gas
WO2017216065A1 (fr) * 2016-06-13 2017-12-21 Aixtron Se Dispositif et procédé de dépôt séquentiel d'une pluralité de couches sur des substrats et unité de réception s'utilisant dans un dispositif de dépôt
US20190375105A1 (en) * 2013-03-15 2019-12-12 Applied Materials, Inc. Substrate deposition systems, robot transfer apparatus, and methods for electronic device manufacturing
US20200161176A1 (en) * 2018-11-20 2020-05-21 Applied Materials, Inc. Cluster processing system for forming a transition metal material

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
US20140242810A1 (en) * 2013-02-27 2014-08-28 Hitachi Kokusai Electric, Inc. Substrate processing apparatus and method of supplying and exhausting gas
US20190375105A1 (en) * 2013-03-15 2019-12-12 Applied Materials, Inc. Substrate deposition systems, robot transfer apparatus, and methods for electronic device manufacturing
WO2017216065A1 (fr) * 2016-06-13 2017-12-21 Aixtron Se Dispositif et procédé de dépôt séquentiel d'une pluralité de couches sur des substrats et unité de réception s'utilisant dans un dispositif de dépôt
US20200161176A1 (en) * 2018-11-20 2020-05-21 Applied Materials, Inc. Cluster processing system for forming a transition metal material

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