WO2023125502A1 - Base grounding detection apparatus and method - Google Patents

Base grounding detection apparatus and method Download PDF

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Publication number
WO2023125502A1
WO2023125502A1 PCT/CN2022/142229 CN2022142229W WO2023125502A1 WO 2023125502 A1 WO2023125502 A1 WO 2023125502A1 CN 2022142229 W CN2022142229 W CN 2022142229W WO 2023125502 A1 WO2023125502 A1 WO 2023125502A1
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Prior art keywords
signal
base
voltage signal
grounded
voltage
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PCT/CN2022/142229
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French (fr)
Chinese (zh)
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吴启东
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北京北方华创微电子装备有限公司
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/04Housings; Supporting members; Arrangements of terminals
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/50Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
    • G01R31/52Testing for short-circuits, leakage current or ground faults

Definitions

  • the present application relates to the field of semiconductor manufacturing, in particular to a base grounding detection device and method.
  • the magnetron sputtering process is a technology widely used in the field of semiconductor manufacturing.
  • a typical magnetron sputtering process is completed in a high vacuum chamber as shown in Figure 1.
  • the main structure of the chamber includes: a chamber wall 9 , a target 1 , a lining 2 , a pressure ring 3 , and a base 4 . These structures mainly constitute the closed environment required for the magnetron sputtering process.
  • the wafer 7 is first placed on the base 4, and then the chamber is evacuated to a vacuum state by the vacuum pump 5.
  • the base 4 rises and lifts the pressure ring 3 to separate the pressure ring 3 from the lining 2, and the base 4 and the pressure ring 3 are suspended (ie, not grounded).
  • the control system feeds a specified amount of argon gas into the chamber through the air inlet 10 as the process gas, and the magnetron sputtering process can be started at this time.
  • the sputtering power supply 8 applies a specified voltage between the chamber wall 9 and the target 1 to ionize the argon gas in the chamber, and at the same time, under the binding effect of the rotating magnetron 6 on the electrons, it is ionized
  • the argon ions move towards the target 1 (cathode) under the action of the electric field force, and the lower surface of the target 1 will form a stable plasma.
  • the ionized argon ions continuously bombard the surface of the target 1, so that the target atoms are sputtered out and fall on the surface of the wafer 7 placed on the base 4, thereby achieving Surface coating process.
  • the free electrons move toward the inner lining 2 (anode), and some of the free electrons will fall on the potential-floating base 4 .
  • a certain amount of free electrons will accumulate on the potential floating base 4, so that a potential difference is formed between the base 4 and the ground. The greater the power in the process, the more free electrons accumulate on the susceptor 4 .
  • the base 4 is short-circuited with the chamber wall 9 or the inner liner 2, for example, foreign objects appear in the chamber to short-circuit the base 4 with the chamber wall 9 or the inner liner 2, or the base 4 and the inner liner 2 are short-circuited.
  • the pressure ring 3 is not completely separated from the inner liner 2, it is misjudged that the base 4 has reached the process position and the magnetron sputtering process is started. At this time, the base 4 is short-circuited with the chamber wall 9 and the inner liner 2.
  • the accumulated free electrons will be quickly absorbed by the ground, making the base 4 and the ground equipotential, and the chamber wall 9 is connected to the ground, which is equivalent to the base 4 becoming an anode, causing the base 4 and the target 1 (cathode) ) form a current loop, and the current flows through the wafer 7 placed on the base 4, which will cause the components on the wafer 7 to be broken down by the current, seriously affecting the electrical performance of the wafer and affecting product quality.
  • the purpose of the present application is to provide a method and device capable of conveniently and accurately performing base grounding detection.
  • a base grounding detection device for use in semiconductor equipment, the base is arranged in a process chamber for performing semiconductor processes in the semiconductor equipment, and the base is used to carry For the wafer to be processed, the base ground detection device includes a voltage signal acquisition unit, a voltage detection unit and a control unit; wherein:
  • the voltage signal acquisition unit is used to acquire the voltage signal of the base
  • the voltage detection unit is configured to receive the voltage signal from the voltage signal acquisition unit, and determine whether the base is grounded according to the voltage signal and a preset voltage signal, and when the base is grounded, sending a first signal to the control unit as an output signal, the first signal indicating that the base is grounded;
  • the control unit is configured to instruct the semiconductor equipment to stop performing the process and send an alarm signal when receiving the first signal during the process of the semiconductor equipment performing the process.
  • the voltage detection unit is specifically used for:
  • the receiving the voltage signal and comparing the voltage signal with the preset voltage signal, and if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the The first signal is used as the output signal.
  • the voltage detection unit is also used for:
  • the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
  • the base ground detection device further includes a pressurizing unit, the pressurizing unit is configured to provide a reference voltage signal to the voltage detection unit when there is no voltage signal on the base, the The voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and A second signal is used as the output signal, the second signal indicating that the base is not grounded.
  • the pressurizing unit is configured to provide a reference voltage signal to the voltage detection unit when there is no voltage signal on the base
  • the voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and A second signal is used as the output signal, the second signal indicating that the base is not grounded.
  • control unit is further configured to, when receiving that the output signal changes from the second signal to the first signal and then changes from the first signal to the second signal, to the record the positions of the base as a first position and a second position respectively, and compare the first position and the second position, and determine that the first position is lower than the second position when the first position is lower than the second position
  • the second position is the lowest craft position.
  • a base grounding detection method which is used in semiconductor equipment, and the method includes:
  • S2 Determine whether the base is grounded according to the voltage signal and a preset voltage signal, and use a first signal as an output signal when the base is grounded, and the first signal indicates that the base is grounded;
  • step S2 specifically includes:
  • step S2 also includes:
  • the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
  • the method also includes:
  • the method also includes:
  • the position of the base is respectively recorded as the first position and a second position, and comparing the first position and the second position, and determining that the second position is the lowest process position when the first position is lower than the second position.
  • the voltage signal of the base is collected by the voltage signal acquisition unit, and the voltage detection unit determines whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, it will indicate whether the base is grounded.
  • the first signal is used as an output signal.
  • the control unit receives the first signal, it will immediately instruct the semiconductor equipment to stop the process and send out an alarm signal, so that the short circuit between the susceptor and the chamber wall or lining can be found in time.
  • the resulting grounding situation avoids accidents in which the wafer to be processed is broken down by the current, which seriously affects the electrical performance of the wafer and affects product quality.
  • Figure 1 shows a schematic diagram of a typical high vacuum chamber for performing a magnetron sputtering process.
  • Figure 2 shows a schematic diagram of a magnetron sputtering process performed in a chamber.
  • Fig. 3 shows a structural block diagram of a base grounding detection device according to an embodiment of the present application.
  • Fig. 4 shows a block diagram of a base ground detection device according to an exemplary embodiment of the present application.
  • FIG. 5( a ), ( b ) and ( c ) show schematic diagrams of outputs corresponding to different states of the base grounding detection device according to an exemplary embodiment of the present application.
  • FIG. 6( a ) and ( b ) show schematic diagrams of analysis for determining the lowest process position according to an exemplary embodiment of the present application.
  • FIG. 7 shows a flow chart of a base ground detection method according to an embodiment of the present application.
  • the voltage signal acquisition unit 302 is used to acquire the voltage signal of the base.
  • the voltage signal acquisition unit 302 can collect the voltage signal of the base by being electrically connected to the part of the base 9 exposed outside the chamber. Before officially starting to execute the magnetron sputtering process, the base 9 will gradually rise from the initial position until reaching the process position.
  • the above-mentioned "part of the base exposed outside the chamber” refers to the part of the base 9 that is always exposed outside the chamber during operation and will not rise into the chamber.
  • the voltage signal acquisition unit 302 may be a voltage signal acquisition wire, which may be connected to the base by means of screws or the like.
  • the voltage detection unit 304 is used to receive the voltage signal from the voltage signal acquisition unit 302, and according to the voltage signal and the preset voltage signal, determine whether the base is grounded, and when the base is grounded, send the first signal as an output signal to the control unit, the first signal indicates that the base is grounded. In some examples, the voltage signal can be further processed.
  • the voltage signal can be divided by a voltage divider circuit, and/or its amplitude can be scaled as required, And/or perform inversion processing on it, etc., then determine whether the base is grounded according to the processing result and the above-mentioned preset voltage signal, and when the base is grounded, send the first signal as an output signal to the control unit, which will not be made here limited.
  • the voltage detection unit 306 is specifically configured to receive the voltage signal, and compare the voltage signal with a preset voltage signal, and if the absolute value of the voltage signal is less than the preset voltage signal, determine that the base is grounded, and The first signal is used as an output signal.
  • the voltage detection unit 306 is also configured to determine that the base is not grounded if the absolute value of the voltage signal is greater than the preset voltage signal, and use the second signal as an output signal, the second signal indicating that the base Not grounded.
  • the control unit 306 is configured to instruct the semiconductor device to stop performing the process and send an alarm signal when receiving the first signal during the process of the semiconductor device executing the process.
  • the voltage signal of the base is collected by the voltage signal acquisition unit, and the voltage detection unit determines whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, it will indicate the first grounding of the base.
  • One signal is used as an output signal.
  • the control unit receives the first signal, it will immediately instruct the semiconductor equipment to stop performing the process and send an alarm signal, so that it can be found in time that the susceptor is short-circuited with the chamber wall or the lining. To avoid accidents where the wafer is broken down by the current, which seriously affects the electrical performance of the wafer and affects the product quality.
  • first signal refers to an electrical signal whose amplitude is a first level
  • second signal refers to an electrical signal whose amplitude is a second level.
  • first level can be set as a high level
  • second The level is low level, or vice versa
  • the first level is low level
  • the second level is high level, which can conveniently and concisely indicate whether the base is grounded, and is convenient for subsequent use.
  • Fig. 4 shows a block diagram of a base ground detection device according to an exemplary embodiment of the present application.
  • the device also includes a pressurization unit 308, the pressurization unit 308 is used to provide a reference voltage signal to the voltage detection unit 304 when there is no voltage signal on the base, and the voltage detection unit 304 is also used to set the The reference voltage signal is compared with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and the second signal is used as an output signal, and the second signal indicates that the base is not grounded.
  • the reference voltage signal will be compared as a substitute voltage signal in subsequent steps, so that the voltage detection unit 304 can also output the first
  • the second signal which is clearly distinguished from the first signal indicating that the base is grounded, ensures that the subsequent control unit 306 can issue a correct alarm signal.
  • the voltage detection unit 304 and the pressurization unit 308 can be implemented by a circuit, which can be integrated on the same circuit board, and those skilled in the art can also realize the above-mentioned units by other hardware and/or software methods that are considered suitable. No limit.
  • the base When the process is performed in the process chamber of the semiconductor equipment, the base needs to be raised and lowered to a suitable process position. The height of this position should meet: the base lifts the pressure ring to separate the pressure ring from the inner lining. In this way, it is necessary to determine the lowest position of the base when performing a process, that is, the lowest process position of the base. How to determine the appropriate minimum process position is also a technical problem in this field.
  • the lowest process position refers to the lowest position of the base allowed by the execution process conditions. We usually use the position of the base 4 when the pressure ring 3 and the inner liner 2 are just separated, and the base 4 and the pressure ring 3 are just in a suspended state as the execution magnetic control position.
  • the lowest process position of the chamber for the sputtering process If the minimum process position is set too low, the process cannot be performed normally; if the minimum process position is too high, the adjustable space left for the base 4 when performing different processes is significantly smaller, and the larger the adjustable space, the subsequent realization. The more processes there are, correspondingly, the small adjustable space will significantly limit the execution of subsequent processes.
  • it is necessary to open the chamber connect one end of the test lead of the multimeter to the base 4, and the other end to the chamber wall 9, and manually monitor the guide between the base and the chamber wall by manually lifting the base 4. According to the general situation, to determine the lowest process position. This method is cumbersome to implement and will cause some disturbance to the chamber.
  • control unit is further configured to record the position of the base as the first signal when receiving the output signal from the second signal to the first signal and then from the first signal to the second signal position and the second position, and compare the first position and the second position, and determine that the second position is the lowest process position when the first position is lower than the second position.
  • the distance between the base and the initial position may be used to characterize the position of the base.
  • the position of the base can be obtained through the operation information of the drive motor of the base, for example, the rising distance of the base can be obtained through the operation information of the drive motor.
  • the lowest process position can be determined quickly and accurately without disturbing the chamber.
  • the output of the base grounding detection device according to the exemplary embodiment of the present application in different states is analyzed below with reference to FIG. 5(a), FIG. 5(b) and FIG. 5(c).
  • the inventor conducted an in-depth and detailed analysis of the entire process of the base rising from the initial position to the process position before the process was executed, the process execution process, and the process of the base descending from the process position to the initial position after the process was completed, and considered the base during process execution.
  • Abnormal conditions of shorts to the chamber wall or lining which are categorized according to the voltage state of the base:
  • the base is in a suspended state, and there is no accumulated charge on the base
  • the process In the rising stage of the base, the process is in contact with the pressure ring until the pressure ring is separated from the inner lining, which belongs to the case (3); in the descending stage of the base, the pressure ring is in contact with the inner lining until the base is separated from the pressure ring, and this process belongs to the situation ( 3); During the execution of the process, the presence of foreign matter causes the base to be short-circuited with the chamber wall or lining, which also belongs to the case (3).
  • Case (1) is analyzed here first.
  • Figure 5(a) takes the state diagram of the base rising stage and before contacting the pressure ring as an example to analyze the situation (1), and other states that meet the situation (1) are similar.
  • the magnetron sputtering process is not performed in the magnetron sputtering chamber, except for the moment when the base lifts up the pressure ring during the rising process of the base, the base is in a suspended state in other cases, and there is no accumulated negative charge on the base .
  • the voltage detection unit judges whether the base is grounded through the voltage signal collected by the voltage signal acquisition unit, then the voltage of the base is not collected.
  • the voltage detection unit cannot compare with the set preset voltage signal, therefore, the pressure unit 308 provides a reference voltage signal.
  • the voltage detecting unit 304 performs detection based on the reference voltage signal provided by the voltage applying unit 308, and compares the reference voltage signal with a preset voltage signal.
  • the setting principle of the reference voltage signal is that its absolute value is greater than the preset voltage signal. Therefore, the voltage detection unit 304 sends a second signal to the control unit 306 as an output signal, the second signal indicating that the base is not grounded. In this way, when there is no voltage signal on the base, it can be compared and judged normally with the set comparison voltage.
  • the preset voltage signal can be set to be 0.5V (volt), and the reference voltage signal can be set to be 15V.
  • Figure 5(b) takes the process execution as an example to analyze the situation (2), and other states that meet the situation (2) are similar.
  • the magnetron sputtering process is performed in the chamber.
  • negative charges are accumulated on the suspended base, and the suspended base is in a negative voltage state, and the voltage signal acquisition unit 302 acquires the negative voltage signal.
  • this is a negative voltage with a large amplitude, and the voltage detection unit 304 compares the voltage signal with the preset voltage signal, and the absolute value of the voltage signal is greater than the preset voltage signal.
  • the voltage detection unit 304 sends a second signal to the control unit 306 to indicate that the base is not grounded.
  • Figure 5(c) analyzes the case (3) by taking the state where the base is rising, the base is in contact with the pressure ring and the pressure ring is not separated from the lining as an example, and other states that meet the case (3) are similar.
  • the magnetron sputtering process is not carried out in the magnetron sputtering chamber, and the pedestal is in the process of rising, the pedestal rises to contact with the pressure ring and lifts the pressure ring from the moment when the inner lining is separated.
  • the base is connected to the ground through the contact between the pressure ring and the lining; similarly, when the process is completed, the base should be lowered from the process position and the pressure ring should be restored to its original position.
  • the base is connected to the ground through the contact between the pressure ring and the lining; or, when the base should be in a suspended state, but due to other abnormal conditions, it is connected to the ground
  • an abnormal situation in the magnetron sputtering process such as: when there is a foreign object between the base and the chamber wall, the foreign object short-circuits the base and the chamber wall; or when the base is at a relatively low
  • the distance between the base and the lining is relatively close, if there is foreign matter falling between the lining and the base, there will be a short circuit between the base and the lining)
  • the accumulation on the base The negative charge will be released, the potential of the base is equal to the ground, the voltage signal acquisition unit 302 collects the voltage signal of the base is 0, the voltage detection unit 304 compares the voltage signal with the preset voltage signal (0.5V), and the The absolute value is smaller than the preset voltage signal
  • Fig. 6(a) and Fig. 6(b) show schematic diagrams of determining the lowest process position according to an exemplary embodiment of the present application.
  • the first signal is assumed to be a low-level signal
  • the second signal is a high-level signal. If there is no abnormal situation that causes the base to be in a conductive state with the ground, the base will be in a conductive state with the ground only at the position shown in Figure 5(c). Since the pressure ring is in contact with the lining, the lining is connected to the ground, and the base is grounded when the base contacts the pressure ring.
  • Fig. 6(a) shows a schematic diagram of the susceptor raising process before performing the process.
  • the base starts to move from the initial position.
  • the base moves to t1 seconds, the base contacts the pressure ring.
  • the voltage detection unit 304 The output signal changes from the second signal (high level) to the first signal (low level), and at this time the position of the base is the first position (the position where the base contacts the pressing ring).
  • the base lifts the pressure ring and continues to move upward, when the base moves to t2 seconds, the base lifts the pressure ring to completely separate from the inner liner, and the connection point between the pressure ring and the inner liner is disconnected.
  • the base is not grounded, the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level), and the position of the base is the second position (the base and the pressure ring are separated from the lining s position).
  • the inventor has conducted in-depth research on this process.
  • the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level)
  • the base and the The pressure ring has been completely disengaged from the inner liner, and the base and the pressure ring have just been disengaged from the inner liner, therefore, the above-mentioned second position can be determined as the lowest process position.
  • Figure 6(b) shows a schematic diagram of the susceptor lowering process after the execution process is completed.
  • the base moves from the process position to the initial position, that is, the base moves from top to bottom. This is the process in which the base puts the lifted pressure ring back to the inner liner and then returns to the initial position.
  • the base moves to t3 seconds
  • the base and the pressure ring touch the lining, and the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level).
  • the base moves to t4 seconds
  • the pressure ring falls completely on the lining, and the base is separated from the pressure ring, and the generated signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). flat).
  • the output signal of the voltage detection unit 304 in Fig. 6(b) seems to be similar to that in Fig. 6(a), but after careful analysis, it can be found that at the time t3 when the above-mentioned generated signal changes, the base and the pressure ring have been in contact with the lining, That is, the pedestal has just passed the theoretical minimum process position downwards, therefore, the position of the pedestal at time t3 is not suitable as the minimum process position.
  • FIG. 7 shows a flow chart of a base ground detection method according to an embodiment of the present application. As shown in Fig. 7, the method includes steps S1-S3.
  • step S2 specifically further includes:
  • the voltage signal is compared with the preset voltage signal, and if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as an output signal.
  • step S2 also includes:
  • the second signal is used as an output signal, and the second signal indicates that the base is not grounded.
  • the method also includes:
  • the method also includes:
  • the positions of the base are respectively recorded as the first position and the second position, and the first position and the second position are compared. Two positions, and when the first position is lower than the second position, determine the second position as the lowest process position.

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Abstract

A base (9) grounding detection apparatus and method. A voltage signal acquisition unit (302) acquires a voltage signal of a base (9). A voltage detection unit (304) determines, according to the voltage signal and a preset voltage signal, whether the base (9) is grounded, and when the base (9) is grounded, uses a first signal indicating that the base (9) is grounded as an output signal. During execution of a process, a control unit (306), once receiving the first signal, immediately instructs a semiconductor device to stop executing the process and sends an alarm signal, so that a grounding situation caused by a short circuit between the base (9) and a chamber wall or a lining can be detected in time, thereby avoiding an accident that a current breaks down a wafer and further seriously impacts the electrical performance of the wafer and product quality.

Description

基座接地检测装置和方法Base ground detection device and method 技术领域technical field
本申请涉及半导体制造领域,特别涉及基座接地检测装置和方法。The present application relates to the field of semiconductor manufacturing, in particular to a base grounding detection device and method.
背景技术Background technique
磁控溅射工艺是一项广泛应用于半导体制造领域的技术,典型的磁控溅射工艺是在如图1所示的高真空腔室内完成的。腔室主体结构包括:腔室壁9、靶材1、内衬2、压环3、基座4。这些结构主要构成了磁控溅射工艺所需的密闭环境。在进行磁控溅射工艺之前,先要将晶圆7放置在基座4上,然后由真空泵5将腔室抽真空至真空状态。当腔室内达到指定的真空度后,基座4上升并将压环3顶起,使压环3与内衬2分离,基座4和压环3悬空(即,不接地)。The magnetron sputtering process is a technology widely used in the field of semiconductor manufacturing. A typical magnetron sputtering process is completed in a high vacuum chamber as shown in Figure 1. The main structure of the chamber includes: a chamber wall 9 , a target 1 , a lining 2 , a pressure ring 3 , and a base 4 . These structures mainly constitute the closed environment required for the magnetron sputtering process. Before performing the magnetron sputtering process, the wafer 7 is first placed on the base 4, and then the chamber is evacuated to a vacuum state by the vacuum pump 5. When the chamber reaches a specified vacuum degree, the base 4 rises and lifts the pressure ring 3 to separate the pressure ring 3 from the lining 2, and the base 4 and the pressure ring 3 are suspended (ie, not grounded).
当基座4到达工艺位后,控制系统通过进气口10向腔室内通入规定量的氩气作为工艺气体,此时可以开始磁控溅射工艺。参考图2,溅射电源8在腔室壁9和靶材1之间施加规定的电压,使腔室内的氩气电离,同时在旋转的磁控管6对电子的束缚作用下,被离化的氩离子受到电场力的作用朝着靶材1(阴极)的方向运动,靶材1的下表面会形成稳定的等离子体。在电场和磁场的作用下被离化的氩离子持续轰击靶材1的表面,使靶材原子被溅射出来并落在置于基座4上的晶圆7表面,从而实现在晶圆7表面的镀膜工艺。When the susceptor 4 reaches the process position, the control system feeds a specified amount of argon gas into the chamber through the air inlet 10 as the process gas, and the magnetron sputtering process can be started at this time. Referring to Figure 2, the sputtering power supply 8 applies a specified voltage between the chamber wall 9 and the target 1 to ionize the argon gas in the chamber, and at the same time, under the binding effect of the rotating magnetron 6 on the electrons, it is ionized The argon ions move towards the target 1 (cathode) under the action of the electric field force, and the lower surface of the target 1 will form a stable plasma. Under the action of the electric field and magnetic field, the ionized argon ions continuously bombard the surface of the target 1, so that the target atoms are sputtered out and fall on the surface of the wafer 7 placed on the base 4, thereby achieving Surface coating process.
同时,上述磁控溅射工艺过程中,自由电子朝着内衬2(阳极)的方向运动,其中也有部分自由电子会落在电位悬浮的基座4上。电位悬浮的基座4上会累积一定量的自由电子,使得基座4与大地之间形成电势差。工艺过程中的功率越大,基座4上累积的自由电子就越多。At the same time, during the above magnetron sputtering process, the free electrons move toward the inner lining 2 (anode), and some of the free electrons will fall on the potential-floating base 4 . A certain amount of free electrons will accumulate on the potential floating base 4, so that a potential difference is formed between the base 4 and the ground. The greater the power in the process, the more free electrons accumulate on the susceptor 4 .
在执行工艺的过程中,如果基座4与腔室壁9或内衬2短接,例如腔室内出现异物使基座4与腔室壁9或内衬2短接,或者在基座4和压环3还未彻底脱离内衬2时就错判基座4到达工艺位而开始执行磁控溅射工艺,此时基座4与腔室壁9和内衬2短接,基座4上累积的自由电子就会迅速被大地吸收,使基座4与大地等电位,而腔室壁9又与大地导通,相当于基座4成为了阳极,导致基座4与靶材1(阴极)之间形成电流回路,电流从置于基座4上的晶圆7流过,会致使晶圆7上的元器件被电流击穿,严重影响晶圆的电学性能,影响产品质量。现有技术中,在执行工艺中难以及时发现基座4与腔室壁9或内衬2短接的情况,因此无法及时发现基座异常接地而及时停止执行工艺,影响了晶圆的质量。In the process of performing the process, if the base 4 is short-circuited with the chamber wall 9 or the inner liner 2, for example, foreign objects appear in the chamber to short-circuit the base 4 with the chamber wall 9 or the inner liner 2, or the base 4 and the inner liner 2 are short-circuited. When the pressure ring 3 is not completely separated from the inner liner 2, it is misjudged that the base 4 has reached the process position and the magnetron sputtering process is started. At this time, the base 4 is short-circuited with the chamber wall 9 and the inner liner 2. The accumulated free electrons will be quickly absorbed by the ground, making the base 4 and the ground equipotential, and the chamber wall 9 is connected to the ground, which is equivalent to the base 4 becoming an anode, causing the base 4 and the target 1 (cathode) ) form a current loop, and the current flows through the wafer 7 placed on the base 4, which will cause the components on the wafer 7 to be broken down by the current, seriously affecting the electrical performance of the wafer and affecting product quality. In the prior art, it is difficult to detect the short circuit between the susceptor 4 and the chamber wall 9 or the inner liner 2 in time during the execution process, so it is impossible to detect the abnormal grounding of the susceptor in time and stop the execution process in time, which affects the quality of the wafer.
发明内容Contents of the invention
本申请的目的是提供能够方便准确地进行基座接地检测的方法和装置。The purpose of the present application is to provide a method and device capable of conveniently and accurately performing base grounding detection.
本申请一方面,提供了一种基座接地检测装置,用于半导体设备中,所述基座设置于所述半导体设备中用于进行半导体工艺的工艺腔室内,且所述基座用于承载待加工的晶圆,所述基座接地检测装置包括电压信号采集单元、电压检测单元和控制单元;其中:In one aspect of the present application, a base grounding detection device is provided for use in semiconductor equipment, the base is arranged in a process chamber for performing semiconductor processes in the semiconductor equipment, and the base is used to carry For the wafer to be processed, the base ground detection device includes a voltage signal acquisition unit, a voltage detection unit and a control unit; wherein:
所述电压信号采集单元用于采集所述基座的电压信号;The voltage signal acquisition unit is used to acquire the voltage signal of the base;
所述电压检测单元用于接收来自所述电压信号采集单元的所述电压信号,并根据所述电压信号和预设电压信号,确定所述基座是否接地,并在所述基座接地时,将第一信号作为输出信号发送给所述控制单元,所述第一信号指示所述基座接地;The voltage detection unit is configured to receive the voltage signal from the voltage signal acquisition unit, and determine whether the base is grounded according to the voltage signal and a preset voltage signal, and when the base is grounded, sending a first signal to the control unit as an output signal, the first signal indicating that the base is grounded;
所述控制单元用于在所述半导体设备执行工艺过程中接收到所述第一信号时,指示所述半导体设备停止执行工艺并发出报警信号。The control unit is configured to instruct the semiconductor equipment to stop performing the process and send an alarm signal when receiving the first signal during the process of the semiconductor equipment performing the process.
可选地,所述电压检测单元具体用于:Optionally, the voltage detection unit is specifically used for:
接收所述电压信号,并将所述电压信号和所述预设电压信号进行对比, 如果所述电压信号的绝对值小于所述预设电压信号,则确定所述基座接地,并将所述第一信号作为所述输出信号。receiving the voltage signal, and comparing the voltage signal with the preset voltage signal, and if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the The first signal is used as the output signal.
可选地,所述电压检测单元还用于:Optionally, the voltage detection unit is also used for:
如果所述电压信号的绝对值大于所述预设电压信号,则确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。If the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
可选地,所述基座接地检测装置还包括加压单元,所述加压单元用于在所述基座无电压信号的情况下,向所述电压检测单元提供一基准电压信号,所述电压检测单元用于将所述基准电压信号与所述预设电压信号进行对比,并在所述基准电压信号的绝对值大于所述预设电压信号时,确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。Optionally, the base ground detection device further includes a pressurizing unit, the pressurizing unit is configured to provide a reference voltage signal to the voltage detection unit when there is no voltage signal on the base, the The voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and A second signal is used as the output signal, the second signal indicating that the base is not grounded.
可选地,所述控制单元还用于在接收到所述输出信号从所述第二信号变为所述第一信号以及接着从所述第一信号变为所述第二信号时,对所述基座的位置分别记录为第一位置和第二位置,且比较所述第一位置和所述第二位置,并在所述第一位置低于所述第二位置时,确定所述第二位置为最低工艺位置。Optionally, the control unit is further configured to, when receiving that the output signal changes from the second signal to the first signal and then changes from the first signal to the second signal, to the record the positions of the base as a first position and a second position respectively, and compare the first position and the second position, and determine that the first position is lower than the second position when the first position is lower than the second position The second position is the lowest craft position.
本申请的另一方面,还提供了一种基座接地检测方法,用于半导体设备中,所述方法包括:In another aspect of the present application, a base grounding detection method is also provided, which is used in semiconductor equipment, and the method includes:
S1、采集基座的电压信号;S1, collecting the voltage signal of the base;
S2、根据所述电压信号与预设电压信号,确定所述基座是否接地,并在所述基座接地时,将第一信号作为输出信号,所述第一信号指示所述基座接地;S2. Determine whether the base is grounded according to the voltage signal and a preset voltage signal, and use a first signal as an output signal when the base is grounded, and the first signal indicates that the base is grounded;
S3、在执行工艺过程中,如果所述输出信号为所述第一信号,停止执行工艺并发出报警信号。S3. During the execution of the process, if the output signal is the first signal, stop the execution of the process and send an alarm signal.
可选地,步骤S2具体包括:Optionally, step S2 specifically includes:
将所述电压信号和所述预设电压信号进行对比,如果所述电压信号的绝 对值小于所述预设电压信号,则确定所述基座接地,并将所述第一信号作为所述输出信号。Comparing the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as the output Signal.
可选地,步骤S2还包括:Optionally, step S2 also includes:
如果所述电压信号的绝对值大于所述预设电压信号,则确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。If the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
可选地,所述方法还包括:Optionally, the method also includes:
在所述基座无电压信号的情况下,提供一基准电压信号,并将所述基准电压信号与所述预设电压信号进行对比,并在所述基准电压信号的绝对值大于所述预设电压信号时,确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。In the case of no voltage signal on the base, provide a reference voltage signal, and compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and use a second signal as the output signal, the second signal indicating that the base is not grounded.
可选地,所述方法还包括:Optionally, the method also includes:
在接收到所述输出信号从所述第二信号变为所述第一信号以及接着从所述第一信号变为所述第二信号时,对所述基座的位置分别记录为第一位置和第二位置,且比较所述第一位置和所述第二位置,并在所述第一位置低于所述第二位置时,确定所述第二位置为最低工艺位置。When the output signal is received from the second signal to the first signal and then from the first signal to the second signal, the position of the base is respectively recorded as the first position and a second position, and comparing the first position and the second position, and determining that the second position is the lowest process position when the first position is lower than the second position.
本申请的技术方案,通过电压信号采集单元采集基座的电压信号,由电压检测单元根据电压信号和预设电压信号,确定基座是否接地,并在基座接地时,将指示基座接地的第一信号作为输出信号,在执行工艺时,控制单元一旦接收到该第一信号则立即指示半导体设备停止执行工艺并发出报警信号,从而可以及时发现基座与腔室壁或内衬短接等导致的接地情况,避免发生待加工晶圆被电流击穿进而严重影响晶圆的电学性能、影响产品质量的事故。In the technical solution of the present application, the voltage signal of the base is collected by the voltage signal acquisition unit, and the voltage detection unit determines whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, it will indicate whether the base is grounded. The first signal is used as an output signal. When the process is being executed, once the control unit receives the first signal, it will immediately instruct the semiconductor equipment to stop the process and send out an alarm signal, so that the short circuit between the susceptor and the chamber wall or lining can be found in time. The resulting grounding situation avoids accidents in which the wafer to be processed is broken down by the current, which seriously affects the electrical performance of the wafer and affects product quality.
附图说明Description of drawings
通过结合附图对本申请示例性实施例进行更详细的描述,本申请的上述以及其它目的、特征和优势将变得更加明显,其中,在本申请示例性实施例 中,相同的附图标记通常代表相同部件。The above and other objects, features and advantages of the present application will become more apparent by describing the exemplary embodiments of the present application in more detail with reference to the accompanying drawings, wherein, in the exemplary embodiments of the present application, the same reference numerals are generally represent the same part.
图1显示典型的执行磁控溅射工艺的高真空腔室示意图。Figure 1 shows a schematic diagram of a typical high vacuum chamber for performing a magnetron sputtering process.
图2显示在腔室中执行磁控溅射工艺的示意图。Figure 2 shows a schematic diagram of a magnetron sputtering process performed in a chamber.
图3显示根据本申请实施例的基座接地检测装置的结构框图。Fig. 3 shows a structural block diagram of a base grounding detection device according to an embodiment of the present application.
图4显示根据本申请示例性实施例的基座接地检测装置的结构框图。Fig. 4 shows a block diagram of a base ground detection device according to an exemplary embodiment of the present application.
图5(a)、(b)和(c)显示根据本申请示例性实施例的基座接地检测装置对应不同状态的输出示意图。5( a ), ( b ) and ( c ) show schematic diagrams of outputs corresponding to different states of the base grounding detection device according to an exemplary embodiment of the present application.
图6(a)和(b)显示根据本申请示例性实施例的确定最低工艺位置的分析示意图。6( a ) and ( b ) show schematic diagrams of analysis for determining the lowest process position according to an exemplary embodiment of the present application.
图7显示根据本申请实施例的基座接地检测方法的流程图。FIG. 7 shows a flow chart of a base ground detection method according to an embodiment of the present application.
具体实施方式Detailed ways
电压信号采集单元302用于采集基座的电压信号。可选地,电压信号采集单元302可以通过与基座9暴露于腔室外的部分电连接,采集基座的电压信号。在正式开始执行磁控溅射工艺前,基座9会从初始位置逐步上升直至到达工艺位。上述基座“暴露于腔室外的部分”,指基座9上在运行过程中始终暴露于腔室外、不会升入腔室的部分。电压信号采集单元302可以是电压信号采集导线,可通过螺钉等方式连接至基座。The voltage signal acquisition unit 302 is used to acquire the voltage signal of the base. Optionally, the voltage signal acquisition unit 302 can collect the voltage signal of the base by being electrically connected to the part of the base 9 exposed outside the chamber. Before officially starting to execute the magnetron sputtering process, the base 9 will gradually rise from the initial position until reaching the process position. The above-mentioned "part of the base exposed outside the chamber" refers to the part of the base 9 that is always exposed outside the chamber during operation and will not rise into the chamber. The voltage signal acquisition unit 302 may be a voltage signal acquisition wire, which may be connected to the base by means of screws or the like.
电压检测单元304用于接收来自电压信号采集单元302的电压信号,并根据电压信号和预设电压信号,确定基座是否接地,并在基座接地时,将第一信号作为输出信号发送给控制单元,该第一信号指示基座接地。在一些示例中,可以对电压信号进行进一步处理,例如,为满足控制系统对电信号范围要求等,可通过分压电路对电压信号进行分压,和/或根据需要对其幅值进行缩放,和/或对其进行反相处理等,然后根据处理结果和上述预设电压信号来确定基座是否接地,并在基座接地时,将第一信号作为输出信号发送给控制单元,在此不作限定。The voltage detection unit 304 is used to receive the voltage signal from the voltage signal acquisition unit 302, and according to the voltage signal and the preset voltage signal, determine whether the base is grounded, and when the base is grounded, send the first signal as an output signal to the control unit, the first signal indicates that the base is grounded. In some examples, the voltage signal can be further processed. For example, in order to meet the requirements of the control system for the electrical signal range, etc., the voltage signal can be divided by a voltage divider circuit, and/or its amplitude can be scaled as required, And/or perform inversion processing on it, etc., then determine whether the base is grounded according to the processing result and the above-mentioned preset voltage signal, and when the base is grounded, send the first signal as an output signal to the control unit, which will not be made here limited.
在一些可能的实施方式中,电压检测单元306具体用于接收电压信号,并将电压信号和预设电压信号进行对比,如果电压信号的绝对值小于预设电压信号,则确定基座接地,并将第一信号作为输出信号。In some possible implementations, the voltage detection unit 306 is specifically configured to receive the voltage signal, and compare the voltage signal with a preset voltage signal, and if the absolute value of the voltage signal is less than the preset voltage signal, determine that the base is grounded, and The first signal is used as an output signal.
在一些可能的实施方式中,电压检测单元306还用于如果电压信号的绝对值大于预设电压信号,则确定基座未接地,并将第二信号作为输出信号,该第二信号指示基座未接地。In some possible implementations, the voltage detection unit 306 is also configured to determine that the base is not grounded if the absolute value of the voltage signal is greater than the preset voltage signal, and use the second signal as an output signal, the second signal indicating that the base Not grounded.
控制单元306用于在半导体设备执行工艺过程中接收到第一信号时,指示半导体设备停止执行工艺并发出报警信号。The control unit 306 is configured to instruct the semiconductor device to stop performing the process and send an alarm signal when receiving the first signal during the process of the semiconductor device executing the process.
本领域技术人员可根据实际需求、仿真实验等选择合适的预设电压信号。Those skilled in the art can select an appropriate preset voltage signal according to actual needs, simulation experiments, and the like.
上述实施例中,通过电压信号采集单元采集基座的电压信号,由电压检测单元根据电压信号和预设电压信号,确定基座是否接地,并在基座接地时,将指示基座接地的第一信号作为输出信号,在执行工艺时,控制单元一旦接收到该第一信号则立即指示半导体设备停止执行工艺并发出报警信号,从而可及时发现基座与腔室壁或内衬短接等导致的接地情况,避免发生晶圆被电流击穿进而严重影响晶圆的电学性能、影响产品质量的事故。In the above-mentioned embodiment, the voltage signal of the base is collected by the voltage signal acquisition unit, and the voltage detection unit determines whether the base is grounded according to the voltage signal and the preset voltage signal, and when the base is grounded, it will indicate the first grounding of the base. One signal is used as an output signal. When the process is being executed, once the control unit receives the first signal, it will immediately instruct the semiconductor equipment to stop performing the process and send an alarm signal, so that it can be found in time that the susceptor is short-circuited with the chamber wall or the lining. To avoid accidents where the wafer is broken down by the current, which seriously affects the electrical performance of the wafer and affects the product quality.
上述术语“第一信号”、“第二信号”用于区分表征不同信息的信号。在一个示例中,第一信号指幅值为第一电平的电信号,第二信号指幅值为第二电平的电信号,例如,可以设第一电平为高电平,第二电平为低电平,或反之,设第一电平为低电平,第二电平为高电平,可方便简明地指示基座是否接地,且便于后续使用。The above terms "first signal" and "second signal" are used to distinguish signals representing different information. In one example, the first signal refers to an electrical signal whose amplitude is a first level, and the second signal refers to an electrical signal whose amplitude is a second level. For example, the first level can be set as a high level, and the second The level is low level, or vice versa, the first level is low level, and the second level is high level, which can conveniently and concisely indicate whether the base is grounded, and is convenient for subsequent use.
图4显示根据本申请示例性实施例的基座接地检测装置的结构框图。如图4所示,该装置还包括加压单元308,加压单元308用于在基座无电压信号的情况下,向电压检测单元304提供一基准电压信号,电压检测单元304还用于将基准电压信号与预设电压信号进行对比,并在基准电压信号的绝对 值大于预设电压信号时,确定基座未接地,并将第二信号作为输出信号,第二信号指示基座未接地。Fig. 4 shows a block diagram of a base ground detection device according to an exemplary embodiment of the present application. As shown in Figure 4, the device also includes a pressurization unit 308, the pressurization unit 308 is used to provide a reference voltage signal to the voltage detection unit 304 when there is no voltage signal on the base, and the voltage detection unit 304 is also used to set the The reference voltage signal is compared with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and the second signal is used as an output signal, and the second signal indicates that the base is not grounded.
在上述基座无电压信号的情况下,上述基准电压信号将作为替代电压信号在后续步骤中被比对,从而使得在基座悬空且无累积电荷等情况下,电压检测单元304也可输出第二信号,与指示基座接地的第一信号明确区分,确保后续控制单元306可发出正确的报警信号。In the case that the base has no voltage signal, the reference voltage signal will be compared as a substitute voltage signal in subsequent steps, so that the voltage detection unit 304 can also output the first The second signal, which is clearly distinguished from the first signal indicating that the base is grounded, ensures that the subsequent control unit 306 can issue a correct alarm signal.
电压检测单元304和加压单元308可以由电路实现,其可以集成在同一块电路板上,本领域技术人员也可以通过其他认为适用的硬件和/或软件方式实现上述各个单元,本申请对此不做限定。The voltage detection unit 304 and the pressurization unit 308 can be implemented by a circuit, which can be integrated on the same circuit board, and those skilled in the art can also realize the above-mentioned units by other hardware and/or software methods that are considered suitable. No limit.
在半导体设备的工艺腔室执行工艺时,需要将基座升降到合适的工艺位,这个位置的高度应满足:基座将压环顶起,使压环与内衬脱离。这样就需要确定一个执行工艺时基座的最低位置即基座的最低工艺位置,如何确定恰当的最低工艺位置,也是本领域的一个技术难题。最低工艺位置指达到执行工艺条件所允许的基座最低位置,我们通常把压环3与内衬2刚刚分离、基座4与压环3刚好处于悬空状态时基座4的位置作为执行磁控溅射工艺的腔室的最低工艺位置。如果最低工艺位置定的太低,无法正常执行工艺;如果最低工艺位偏高,留给基座4在执行不同工艺时的可调整空间就显著变小,而可调整空间越大,后续能够实现的工艺就越多,相应地,可调整空间小,则会显著限制后续工艺执行。现有技术中需要打开腔室,用万用表的表笔一端连接在基座4上,另外一端连接在腔室壁9上,并通过手动升降基座4,人工监控基座与腔室壁间的导通情况,来确定最低工艺位置。这种方法实现起来比较繁琐,而且会对腔室产生一定干扰。When the process is performed in the process chamber of the semiconductor equipment, the base needs to be raised and lowered to a suitable process position. The height of this position should meet: the base lifts the pressure ring to separate the pressure ring from the inner lining. In this way, it is necessary to determine the lowest position of the base when performing a process, that is, the lowest process position of the base. How to determine the appropriate minimum process position is also a technical problem in this field. The lowest process position refers to the lowest position of the base allowed by the execution process conditions. We usually use the position of the base 4 when the pressure ring 3 and the inner liner 2 are just separated, and the base 4 and the pressure ring 3 are just in a suspended state as the execution magnetic control position. The lowest process position of the chamber for the sputtering process. If the minimum process position is set too low, the process cannot be performed normally; if the minimum process position is too high, the adjustable space left for the base 4 when performing different processes is significantly smaller, and the larger the adjustable space, the subsequent realization. The more processes there are, correspondingly, the small adjustable space will significantly limit the execution of subsequent processes. In the prior art, it is necessary to open the chamber, connect one end of the test lead of the multimeter to the base 4, and the other end to the chamber wall 9, and manually monitor the guide between the base and the chamber wall by manually lifting the base 4. According to the general situation, to determine the lowest process position. This method is cumbersome to implement and will cause some disturbance to the chamber.
根据本申请的一些实施方式,控制单元还用于在接收到输出信号从第二信号变为第一信号以及接着从第一信号变为第二信号时,对基座的位置分别记录为第一位置和第二位置,且比较第一位置和第二位置,并在第一位置低 于第二位置时,确定第二位置为最低工艺位置。According to some embodiments of the present application, the control unit is further configured to record the position of the base as the first signal when receiving the output signal from the second signal to the first signal and then from the first signal to the second signal position and the second position, and compare the first position and the second position, and determine that the second position is the lowest process position when the first position is lower than the second position.
在一个示例中,可以采用基座与初始位置间的距离来表征基座的位置。In an example, the distance between the base and the initial position may be used to characterize the position of the base.
在一个示例中,可以通过基座的驱动电机的运行信息获取基座的位置,例如,可通过驱动电机的运行信息获取基座的上升距离。In an example, the position of the base can be obtained through the operation information of the drive motor of the base, for example, the rising distance of the base can be obtained through the operation information of the drive motor.
根据本申请的上述示例性实施例,可以快速精准地确定最低工艺位置,且对腔室无干扰。According to the above exemplary embodiments of the present application, the lowest process position can be determined quickly and accurately without disturbing the chamber.
以下结合图5(a)、图5(b)和图5(c)对根据本申请示例性实施例的基座接地检测装置在不同状态下的输出进行分析。The output of the base grounding detection device according to the exemplary embodiment of the present application in different states is analyzed below with reference to FIG. 5(a), FIG. 5(b) and FIG. 5(c).
发明人对执行工艺前基座从初始位置上升至工艺位、工艺执行过程以及工艺完成后基座从工艺位下降到初始位置的整个过程进行了深入细致的分析,并考虑了工艺执行中基座与腔室壁或内衬短接的异常情况,根据基座的电压状态对这些情况进行了分类:The inventor conducted an in-depth and detailed analysis of the entire process of the base rising from the initial position to the process position before the process was executed, the process execution process, and the process of the base descending from the process position to the initial position after the process was completed, and considered the base during process execution. Abnormal conditions of shorts to the chamber wall or lining, which are categorized according to the voltage state of the base:
(1)基座处于悬浮状态,且基座上无累积电荷;(1) The base is in a suspended state, and there is no accumulated charge on the base;
(2)基座处于悬浮状态,且基座上有累积负电荷;(2) The base is in a suspended state, and there is accumulated negative charge on the base;
(3)基座处于接地状态。(3) The base is grounded.
基座上升阶段,与压环接触前以及顶起压环并使压环与内衬脱离后,均属于上述情况(1);基座下降阶段,将压环放置到内衬上并与压环脱离后,也属于上述情况(1)。In the rising stage of the base, before contacting the pressure ring and after lifting the pressure ring and separating the pressure ring from the inner lining, all belong to the above situation (1); in the descending stage of the base, the pressure ring is placed on the inner lining and connected After separation, it also belongs to the above-mentioned situation (1).
工艺执行中,属于上述情况(2);基座下降阶段,且压环未与内衬接触前,也属于上述情况(2)。During the execution of the process, it belongs to the above-mentioned situation (2); when the base is lowered, and before the pressure ring is in contact with the lining, it also belongs to the above-mentioned situation (2).
基座上升阶段,与压环接触直至压环与内衬脱离,这一过程属于情况(3);基座下降阶段,压环与内衬接触直至基座脱离压环,这一过程属于情况(3);工艺执行过程中,出现异物导致基座与腔室壁或内衬短接,也属于情况(3)。In the rising stage of the base, the process is in contact with the pressure ring until the pressure ring is separated from the inner lining, which belongs to the case (3); in the descending stage of the base, the pressure ring is in contact with the inner lining until the base is separated from the pressure ring, and this process belongs to the situation ( 3); During the execution of the process, the presence of foreign matter causes the base to be short-circuited with the chamber wall or lining, which also belongs to the case (3).
此处先对情况(1)进行分析。图5(a)以基座上升阶段、与压环接触前的状态图为例对情况(1)进行了分析,其他符合情况(1)的状态与之类似。当磁控溅 射腔室内没有进行磁控溅射工艺时,除基座上升过程中基座顶起压环的瞬间,其他情况下基座均处于悬浮状态,且基座上没有累积的负电荷。这种状态下,由于电压信号采集单元的采集电压输入端无电压信号,而电压检测单元是通过电压信号采集单元采集的电压信号来进行判断基座是否接地的,那么没有采集到基座的电压信号,电压检测单元就无法与设置的预设电压信号进行对比,因此,加压单元308提供一基准电压信号。电压检测单元304基于加压单元308提供的基准电压信号进行检测,并将基准电压信号与预设电压信号进行对比。基准电压信号的设置原则即为其绝对值大于预设电压信号。因此,电压检测单元304将第二信号作为输出信号发送给控制单元306,第二信号指示基座未接地。这样能够使基座无电压信号时能够正常与设置的对比电压进行对比判断。在一个示例中,可设定预设电压信号为0.5V(伏),基准电压信号为15V。Case (1) is analyzed here first. Figure 5(a) takes the state diagram of the base rising stage and before contacting the pressure ring as an example to analyze the situation (1), and other states that meet the situation (1) are similar. When the magnetron sputtering process is not performed in the magnetron sputtering chamber, except for the moment when the base lifts up the pressure ring during the rising process of the base, the base is in a suspended state in other cases, and there is no accumulated negative charge on the base . In this state, since there is no voltage signal at the acquisition voltage input terminal of the voltage signal acquisition unit, and the voltage detection unit judges whether the base is grounded through the voltage signal collected by the voltage signal acquisition unit, then the voltage of the base is not collected. signal, the voltage detection unit cannot compare with the set preset voltage signal, therefore, the pressure unit 308 provides a reference voltage signal. The voltage detecting unit 304 performs detection based on the reference voltage signal provided by the voltage applying unit 308, and compares the reference voltage signal with a preset voltage signal. The setting principle of the reference voltage signal is that its absolute value is greater than the preset voltage signal. Therefore, the voltage detection unit 304 sends a second signal to the control unit 306 as an output signal, the second signal indicating that the base is not grounded. In this way, when there is no voltage signal on the base, it can be compared and judged normally with the set comparison voltage. In one example, the preset voltage signal can be set to be 0.5V (volt), and the reference voltage signal can be set to be 15V.
对情况(2)进行分析。图5(b)以工艺执行中为例对情况(2)进行了分析,其他符合情况(2)的状态与之类似。此时,腔室内执行磁控溅射工艺,如前文所述,悬浮的基座上会累积负电荷,悬浮的基座处于负电压状态,电压信号采集单元302采集得到该负电压信号。在实际磁控溅射工艺中,这是一个幅值较大的负电压,电压检测单元304对比该电压信号与预设电压信号,该电压信号的绝对值大于预设电压信号。此时,电压检测单元304将第二信号发送给控制单元306,以指示基座未接地。Analyze the situation (2). Figure 5(b) takes the process execution as an example to analyze the situation (2), and other states that meet the situation (2) are similar. At this time, the magnetron sputtering process is performed in the chamber. As mentioned above, negative charges are accumulated on the suspended base, and the suspended base is in a negative voltage state, and the voltage signal acquisition unit 302 acquires the negative voltage signal. In the actual magnetron sputtering process, this is a negative voltage with a large amplitude, and the voltage detection unit 304 compares the voltage signal with the preset voltage signal, and the absolute value of the voltage signal is greater than the preset voltage signal. At this time, the voltage detection unit 304 sends a second signal to the control unit 306 to indicate that the base is not grounded.
对情况(3)进行分析。图5(c)以基座上升阶段、基座与压环接触且压环未与内衬脱离的状态为例对情况(3)进行了分析,其他符合情况(3)的状态与之类似。当磁控溅射腔室内没有进行磁控溅射工艺时,而基座正处在上升过程中,基座上升到与压环接触并将压环顶起于内衬脱离的瞬间,此时,基座通过压环与内衬之间的接触与大地导通;同样的,当工艺完成后,基座要从工艺位置下降,并将压环恢复到原来的位置,这时当基座与压环脱离,并将压环放 置在内衬上的瞬间,基座通过压环与内衬的接触与大地导通;或者,当基座应该处于悬浮状态,但由于其他异常情况导致与大地导通时,例如,磁控溅射工艺出现了异常情况(比如:当出现基座与腔室壁之间有异物,该异物将基座与腔室壁短接的情况;或者当基座处于比较低的工艺位时,基座与内衬的间距比较近,如果有异物掉落到内衬与基座中间,就会出现基座与内衬短接的情况),这些情况下基座上的累积负电荷会被释放,基座的电位与大地相等,电压信号采集单元302采集到基座的电压信号为0,电压检测单元304将该电压信号与预设电压信号(0.5V)进行对比,其绝对值小于预设电压信号,因此输出第一信号作为输出信号发送给控制单元306,第一信号指示基座接地。Analyze the case (3). Figure 5(c) analyzes the case (3) by taking the state where the base is rising, the base is in contact with the pressure ring and the pressure ring is not separated from the lining as an example, and other states that meet the case (3) are similar. When the magnetron sputtering process is not carried out in the magnetron sputtering chamber, and the pedestal is in the process of rising, the pedestal rises to contact with the pressure ring and lifts the pressure ring from the moment when the inner lining is separated. At this time, The base is connected to the ground through the contact between the pressure ring and the lining; similarly, when the process is completed, the base should be lowered from the process position and the pressure ring should be restored to its original position. The moment the ring is detached and the pressure ring is placed on the lining, the base is connected to the ground through the contact between the pressure ring and the lining; or, when the base should be in a suspended state, but due to other abnormal conditions, it is connected to the ground When, for example, there is an abnormal situation in the magnetron sputtering process (such as: when there is a foreign object between the base and the chamber wall, the foreign object short-circuits the base and the chamber wall; or when the base is at a relatively low In the process position, the distance between the base and the lining is relatively close, if there is foreign matter falling between the lining and the base, there will be a short circuit between the base and the lining), in these cases the accumulation on the base The negative charge will be released, the potential of the base is equal to the ground, the voltage signal acquisition unit 302 collects the voltage signal of the base is 0, the voltage detection unit 304 compares the voltage signal with the preset voltage signal (0.5V), and the The absolute value is smaller than the preset voltage signal, so a first signal is output as an output signal and sent to the control unit 306, and the first signal indicates that the base is grounded.
图6(a)和图6(b)显示根据本申请示例性实施例的确定最低工艺位置的示意图,为便于描述,设第一信号为低电平信号,第二信号为高电平信号。如果没有异常情况导致基座与大地导通的状态时,基座只有在如图5(c)的位置才与大地呈现导通状态。由于压环与内衬接触,内衬与大地连接,基座接触到压环则基座接地。在确定最低工艺位置时,必须要保证基座由下向上运动,因为我们需要的是基座与压环脱离内衬的位置。Fig. 6(a) and Fig. 6(b) show schematic diagrams of determining the lowest process position according to an exemplary embodiment of the present application. For ease of description, the first signal is assumed to be a low-level signal, and the second signal is a high-level signal. If there is no abnormal situation that causes the base to be in a conductive state with the ground, the base will be in a conductive state with the ground only at the position shown in Figure 5(c). Since the pressure ring is in contact with the lining, the lining is connected to the ground, and the base is grounded when the base contacts the pressure ring. When determining the lowest process position, it is necessary to ensure that the base moves from bottom to top, because what we need is the position where the base and the pressure ring are separated from the lining.
图6(a)显示执行工艺前基座上升过程的示意图。如图6(a)所示,基座由初始位置开始运动,当基座运动到t1秒时,基座与压环接触,根据上文分析,此时由于基座接地,电压检测单元304的输出信号从第二信号(高电平)变为第一信号(低电平),此时基座的位置为第一位置(基座接触压环的位置)。随着基座顶起压环并继续向上运动,当基座运动到t2秒时,基座顶起压环使其与内衬完全脱离,压环与内衬的连接点断开,此时基座未接地,电压检测单元304的输出信号从第一信号(低电平)变为第二信号(高电平),此时基座的位置为第二位置(基座与压环脱离内衬的位置)。发明人对这一过程进行了深入研究,上述过程中,t2时刻,当电压检测单元304的输出信号从第一信号(低电平)变为第二信号(高电平)时,基座和压环已完全与内衬脱离,并且基座和压 环刚刚与内衬脱离,因此,可将上述第二位置确定为最低工艺位置。Fig. 6(a) shows a schematic diagram of the susceptor raising process before performing the process. As shown in Figure 6(a), the base starts to move from the initial position. When the base moves to t1 seconds, the base contacts the pressure ring. According to the above analysis, at this time, because the base is grounded, the voltage detection unit 304 The output signal changes from the second signal (high level) to the first signal (low level), and at this time the position of the base is the first position (the position where the base contacts the pressing ring). As the base lifts the pressure ring and continues to move upward, when the base moves to t2 seconds, the base lifts the pressure ring to completely separate from the inner liner, and the connection point between the pressure ring and the inner liner is disconnected. The base is not grounded, the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level), and the position of the base is the second position (the base and the pressure ring are separated from the lining s position). The inventor has conducted in-depth research on this process. In the above process, at time t2, when the output signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level), the base and the The pressure ring has been completely disengaged from the inner liner, and the base and the pressure ring have just been disengaged from the inner liner, therefore, the above-mentioned second position can be determined as the lowest process position.
图6(b)显示执行工艺完成后基座下降过程的示意图。基座从工艺位开始向初始位置运动,即基座由上往下运动,这是基座将顶起的压环放回到内衬、再回到初始位置的过程。当基座运动到t3秒时,基座与压环接触到内衬,电压检测单元304的输出信号由第二信号(高电平)变为第一信号(低电平)。当基座运动到t4秒时,压环完全落到内衬上,并且基座与压环脱离,电压检测单元304的生成信号由第一信号(低电平)变为第二信号(高电平)。图6(b)中电压检测单元304的输出信号与图6(a)看似类似,但是仔细分析后可发现,在上述生成信号变化的t3时刻,基座和压环已经与内衬接触,即基座刚刚向下越过了理论上的最低工艺位置,因此,t3时刻基座的位置不适合作为最低工艺位置。Figure 6(b) shows a schematic diagram of the susceptor lowering process after the execution process is completed. The base moves from the process position to the initial position, that is, the base moves from top to bottom. This is the process in which the base puts the lifted pressure ring back to the inner liner and then returns to the initial position. When the base moves to t3 seconds, the base and the pressure ring touch the lining, and the output signal of the voltage detection unit 304 changes from the second signal (high level) to the first signal (low level). When the base moves to t4 seconds, the pressure ring falls completely on the lining, and the base is separated from the pressure ring, and the generated signal of the voltage detection unit 304 changes from the first signal (low level) to the second signal (high level). flat). The output signal of the voltage detection unit 304 in Fig. 6(b) seems to be similar to that in Fig. 6(a), but after careful analysis, it can be found that at the time t3 when the above-mentioned generated signal changes, the base and the pressure ring have been in contact with the lining, That is, the pedestal has just passed the theoretical minimum process position downwards, therefore, the position of the pedestal at time t3 is not suitable as the minimum process position.
图7显示根据本申请实施例的基座接地检测方法的流程图。如图7所示,该方法包括步骤S1~S3。FIG. 7 shows a flow chart of a base ground detection method according to an embodiment of the present application. As shown in Fig. 7, the method includes steps S1-S3.
S1,采集基座的电压信号;S1, collecting the voltage signal of the base;
S2,根据电压信号与预设电压信号,确定基座是否接地,并在基座接地时,将第一信号作为输出信号,第一信号指示基座接地;S2. Determine whether the base is grounded according to the voltage signal and the preset voltage signal, and use the first signal as an output signal when the base is grounded, and the first signal indicates that the base is grounded;
S3,在执行工艺过程中,如果输出信号为第一信号,停止执行工艺并发出报警信号。S3. During the execution of the process, if the output signal is the first signal, stop the execution of the process and send an alarm signal.
在一些可能的实施方式中,步骤S2具体还包括:In some possible implementation manners, step S2 specifically further includes:
将电压信号和预设电压信号进行对比,如果电压信号的绝对值小于预设电压信号,则确定基座接地,并将第一信号作为输出信号。The voltage signal is compared with the preset voltage signal, and if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as an output signal.
在一些可能的实施方式中,步骤S2还包括:In some possible implementation manners, step S2 also includes:
如果电压信号的绝对值大于预设电压信号,则确定基座未接地,并将第二信号作为输出信号,第二信号指示基座未接地。If the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and the second signal is used as an output signal, and the second signal indicates that the base is not grounded.
在一些可能的实施方式中,方法还包括:In some possible implementations, the method also includes:
在基座无电压信号的情况下,提供一基准电压信号,并将基准电压信号与预设电压信号进行对比,并在基准电压信号的绝对值大于预设电压信号时,确定基座未接地,并将第二信号作为输出信号,第二信号指示基座未接地。In the case of no voltage signal on the base, provide a reference voltage signal, compare the reference voltage signal with the preset voltage signal, and determine that the base is not grounded when the absolute value of the reference voltage signal is greater than the preset voltage signal, And take the second signal as the output signal, the second signal indicates that the base is not grounded.
在一些可能的实施方式中,方法还包括:In some possible implementations, the method also includes:
在接收到输出信号从第二信号变为第一信号以及接着从第一信号变为第二信号时,对基座的位置分别记录为第一位置和第二位置,且比较第一位置和第二位置,并在第一位置低于第二位置时,确定第二位置为最低工艺位置。When receiving the output signal from the second signal to the first signal and then from the first signal to the second signal, the positions of the base are respectively recorded as the first position and the second position, and the first position and the second position are compared. Two positions, and when the first position is lower than the second position, determine the second position as the lowest process position.
关于本实施例的其他细节和方面,请参见上文,在此不再赘述。For other details and aspects of this embodiment, please refer to the above, and details will not be repeated here.
以上已经描述了本申请的各实施例,上述说明是示例性的,并非穷尽性的,并且也不限于所披露的各实施例。在不偏离所说明的各实施例的范围和精神的情况下,对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。Having described various embodiments of the present application above, the foregoing description is exemplary, not exhaustive, and is not limited to the disclosed embodiments. Many modifications and alterations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.

Claims (10)

  1. 一种基座接地检测装置,用于半导体设备中,所述基座设置于所述半导体设备中用于进行半导体工艺的工艺腔室内,且所述基座用于承载待加工的晶圆,其特征在于,所述基座接地检测装置包括电压信号采集单元、电压检测单元和控制单元;其中:A pedestal grounding detection device used in semiconductor equipment, the pedestal is set in the process chamber for semiconductor process in the semiconductor equipment, and the pedestal is used to carry the wafer to be processed, its It is characterized in that the base grounding detection device includes a voltage signal acquisition unit, a voltage detection unit and a control unit; wherein:
    所述电压信号采集单元用于采集所述基座的电压信号;The voltage signal acquisition unit is used to acquire the voltage signal of the base;
    所述电压检测单元用于接收来自所述电压信号采集单元的所述电压信号,并根据所述电压信号和预设电压信号,确定所述基座是否接地,并在所述基座接地时,将第一信号作为输出信号发送给所述控制单元,所述第一信号指示所述基座接地;The voltage detection unit is configured to receive the voltage signal from the voltage signal acquisition unit, and determine whether the base is grounded according to the voltage signal and a preset voltage signal, and when the base is grounded, sending a first signal to the control unit as an output signal, the first signal indicating that the base is grounded;
    所述控制单元用于在所述半导体设备执行工艺过程中接收到所述第一信号时,指示所述半导体设备停止执行工艺并发出报警信号。The control unit is configured to instruct the semiconductor equipment to stop performing the process and send an alarm signal when receiving the first signal during the process of the semiconductor equipment performing the process.
  2. 根据权利要求1所述的基座接地检测装置,其特征在于,所述电压检测单元具体用于:The base grounding detection device according to claim 1, wherein the voltage detection unit is specifically used for:
    接收所述电压信号,并将所述电压信号和所述预设电压信号进行对比,如果所述电压信号的绝对值小于所述预设电压信号,则确定所述基座接地,并将所述第一信号作为所述输出信号。receiving the voltage signal, and comparing the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the The first signal is used as the output signal.
  3. 根据权利要求2所述的基座接地检测装置,其特征在于,所述电压检测单元还用于:The base grounding detection device according to claim 2, wherein the voltage detection unit is also used for:
    如果所述电压信号的绝对值大于所述预设电压信号,则确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。If the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
  4. 根据权利要求1所述的基座接地检测装置,其特征在于,所述装置还包括加压单元,所述加压单元用于在所述基座无电压信号的情况下,向所 述电压检测单元提供一基准电压信号,所述电压检测单元用于将所述基准电压信号与所述预设电压信号进行对比,并在所述基准电压信号的绝对值大于所述预设电压信号时,确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。The base ground detection device according to claim 1, characterized in that the device further comprises a pressurization unit, and the pressurization unit is used to provide the voltage detection The unit provides a reference voltage signal, and the voltage detection unit is used to compare the reference voltage signal with the preset voltage signal, and determine when the absolute value of the reference voltage signal is greater than the preset voltage signal The base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
  5. 根据权利要求3或4所述的基座接地检测装置,其特征在于,所述控制单元还用于在接收到所述输出信号从所述第二信号变为所述第一信号以及接着从所述第一信号变为所述第二信号时,对所述基座的位置分别记录为第一位置和第二位置,且比较所述第一位置和所述第二位置,并在所述第一位置低于所述第二位置时,确定所述第二位置为最低工艺位置。The base grounding detection device according to claim 3 or 4, wherein the control unit is further configured to change from the second signal to the first signal and then from the When the first signal changes to the second signal, the positions of the base are respectively recorded as the first position and the second position, and the first position and the second position are compared, and the When a position is lower than the second position, it is determined that the second position is the lowest process position.
  6. 一种基座接地检测方法,用于半导体设备中,其特征在于,所述方法包括:A base grounding detection method used in semiconductor equipment, characterized in that the method comprises:
    S1、采集基座的电压信号;S1, collecting the voltage signal of the base;
    S2、根据所述电压信号与预设电压信号,确定所述基座是否接地,并在所述基座接地时,将第一信号作为输出信号,所述第一信号指示所述基座接地;S2. Determine whether the base is grounded according to the voltage signal and a preset voltage signal, and use a first signal as an output signal when the base is grounded, and the first signal indicates that the base is grounded;
    S3、在执行工艺过程中,如果所述输出信号为所述第一信号,停止执行工艺并发出报警信号。S3. During the execution of the process, if the output signal is the first signal, stop the execution of the process and send an alarm signal.
  7. 根据权利要求6所述的基座接地检测方法,其特征在于,所述步骤S2具体包括:The base grounding detection method according to claim 6, wherein the step S2 specifically comprises:
    将所述电压信号和所述预设电压信号进行对比,如果所述电压信号的绝对值小于所述预设电压信号,则确定所述基座接地,并将所述第一信号作为所述输出信号。Comparing the voltage signal with the preset voltage signal, if the absolute value of the voltage signal is smaller than the preset voltage signal, it is determined that the base is grounded, and the first signal is used as the output Signal.
  8. 根据权利要求7所述的基座接地检测方法,其特征在于,步骤S2 还包括:The base grounding detection method according to claim 7, wherein step S2 further comprises:
    如果所述电压信号的绝对值大于所述预设电压信号,则确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。If the absolute value of the voltage signal is greater than the preset voltage signal, it is determined that the base is not grounded, and a second signal is used as the output signal, the second signal indicating that the base is not grounded.
  9. 根据权利要求6所述的基座接地检测方法,其特征在于,所述方法还包括:The base grounding detection method according to claim 6, further comprising:
    在所述基座无电压信号的情况下,提供一基准电压信号,并将所述基准电压信号与所述预设电压信号进行对比,并在所述基准电压信号的绝对值大于所述预设电压信号时,确定所述基座未接地,并将第二信号作为所述输出信号,所述第二信号指示所述基座未接地。In the case of no voltage signal on the base, provide a reference voltage signal, and compare the reference voltage signal with the preset voltage signal, and when the absolute value of the reference voltage signal is greater than the preset voltage signal, determine that the base is not grounded, and use a second signal as the output signal, the second signal indicating that the base is not grounded.
  10. 根据权利要求8或9所述的基座接地检测方法,其特征在于,所述方法还包括:The base grounding detection method according to claim 8 or 9, wherein the method further comprises:
    在接收到所述输出信号从所述第二信号变为所述第一信号以及接着从所述第一信号变为所述第二信号时,对所述基座的位置分别记录为第一位置和第二位置,且比较所述第一位置和所述第二位置,并在所述第一位置低于所述第二位置时,确定所述第二位置为最低工艺位置。When the output signal is received from the second signal to the first signal and then from the first signal to the second signal, the position of the base is respectively recorded as the first position and a second position, and comparing the first position and the second position, and determining that the second position is the lowest process position when the first position is lower than the second position.
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