WO2023123270A1

WO2023123270A1 - Display panel, display apparatus and manufacturing method for display panel

Info

Publication number: WO2023123270A1
Application number: PCT/CN2021/143313
Authority: WO
Inventors: 樊勇
Original assignee: 厦门市芯颖显示科技有限公司
Priority date: 2021-12-30
Filing date: 2021-12-30
Publication date: 2023-07-06

Abstract

The present invention provides a display panel, a display apparatus, and a manufacturing method for the display panel. The display panel comprises a driving substrate, a light source assembly and a color film substrate. In the present invention, a light-emitting component and a color conversion layer are disposed between two adjacent isolation structures in the light source assembly, so that light emitted to a blocking wall of an isolation structure may be reflected into the color conversion layer, thereby improving the utilization rate of outgoing light.

Description

Display panel, display device, and method for manufacturing display panel

technical field

The present application relates to the field of display technology, and in particular to a display panel, a display device, and a method for manufacturing the display panel.

Background technique

Micro LED (Micro light emitting diode) display is a next-generation display technology emerging after liquid crystal display and OLED display. The MicroLED display panel uses LED light-emitting chips (MicroLED chips) with a size ranging from a few microns to tens of microns as pixel units, which are closely arranged in an array one by one, and each chip can be independently driven to light up and emit light.

MicroLED display panels have many advantages such as self-illumination, high efficiency, long life, and ultra-high resolution. There are many ways to use Micro LED to realize the color display of the display panel. Color conversion is the most widely used one. For example, through the combination of light source and color conversion layer, the color conversion layer is used to convert the colored light emitted by the light source. To achieve full-color display the desired color of light. There are many ways to use Micro LED to realize the color display of the display panel. Color conversion is the most widely used one. For example, through the combination of light source and color conversion layer, the color conversion layer is used to convert the colored light emitted by the light source. To achieve full-color display the desired color of light.

However, in the display panel, a black matrix is usually provided to prevent color crosstalk between adjacent light-emitting devices. Part of the light emitted by the light source directly enters the black matrix and is absorbed by the black matrix without being converted into other colors by the color conversion layer. Therefore, how to improve the utilization rate of the light emitted by the light source is still one of the important existing problems.

technical problem

The present invention provides a display panel and a display device, aiming at realizing full-color display of the display panel and improving the utilization rate of light emitted by a light source to improve color conversion efficiency.

technical solution

In a first aspect, the present invention provides a display panel, including: a driving substrate, the driving substrate includes a first substrate and a thin film transistor layer disposed on the first substrate; a light source assembly, the light source assembly includes multiple a plurality of light-emitting devices, a plurality of spaced isolation structures, and a plurality of color conversion layers, the plurality of light-emitting devices and the plurality of spaced isolation structures are disposed on the thin film transistor layer, and the plurality of color conversion layers respectively arranged on the plurality of light-emitting devices, and each of the color conversion layers and each of the light-emitting devices is arranged between two adjacent isolation structures; a color filter substrate, the color filter substrate includes a second substrate The bottom and the color filter layer arranged on the second substrate, the side of the color filter substrate on which the color filter layer is provided faces the plurality of color conversion layers and the plurality of isolation structures arranged at intervals Setting; wherein, the isolation structure includes a barrier wall and a pixel isolation layer sequentially stacked on the thin film transistor layer.

In some embodiments of the present invention, the sum of the heights of the light emitting device and the color conversion layer is less than or equal to the height of the isolation structure.

In some embodiments of the present invention, the height of the retaining wall is greater than the height of the light emitting device.

In some embodiments of the present invention, the height difference between the barrier wall and the light emitting device is between one tenth and one half of the height of the light emitting device.

In some embodiments of the present invention, the width of the pixel isolation layer gradually decreases along a direction away from the thin film transistor layer.

In some embodiments of the present invention, the retaining wall is a white glue layer, and the reflectivity of the retaining wall is greater than 85%.

In some embodiments of the present invention, the display panel further includes an adhesive layer, and the adhesive layer is disposed between the color filter substrate and the light source assembly.

In a second aspect, the present invention also provides a method for manufacturing a display panel, including: providing a driving substrate, the driving substrate including a first substrate and a thin film transistor layer disposed on the first substrate; A light source assembly comprising a plurality of light emitting devices, a plurality of spaced isolation structures and a plurality of color conversion layers is formed on the transistor layer, the plurality of light emitting devices and the plurality of spaced isolation structures are disposed on the thin film transistor layer Above, the isolation structure includes a barrier wall and a pixel isolation layer sequentially stacked on the thin film transistor layer, the plurality of color conversion layers are respectively disposed on the plurality of light-emitting devices, and each of the color conversion layers and each of the plurality of light-emitting devices is disposed between two adjacent isolation structures; a color filter substrate is provided, and the color filter substrate includes a second substrate and a color filter layer disposed on the second substrate ; adhering the side of the color filter substrate provided with the color filter layer to the plurality of color conversion layers and the plurality of spaced isolation structures.

In some embodiments of the present invention, the step of forming a plurality of light emitting devices, a plurality of spaced isolation structures, and a plurality of color conversion layers on the thin film transistor layer includes: forming the thin film transistor layer on the thin film transistor layer. A plurality of light-emitting devices; forming a plurality of barrier walls arranged at intervals on the thin film transistor layer, so that each of the light-emitting devices is located between two adjacent barrier walls; the plurality of barrier walls arranged at intervals A plurality of pixel isolation layers are correspondingly formed on the plurality of light emitting devices; the plurality of color conversion layers are correspondingly formed on the plurality of light emitting devices.

In some embodiments of the present invention, in the step of adhering the side of the color filter substrate provided with the color filter layer to the plurality of color conversion layers and the plurality of spaced isolation structures wherein an adhesive layer is arranged between the side of the color filter substrate on which the color filter layer is provided and the plurality of color conversion layers and the plurality of spaced isolation structures, so as to connect the color filter substrate to the The light source assembly is connected.

In a third aspect, the present invention further provides a display device, including the above-mentioned display panel.

Beneficial effect

The beneficial effect of the present invention is that: in the display panel provided by the present invention, each light-emitting device is arranged between two adjacent isolation structures, and the color conversion layer is arranged on a plurality of light-emitting devices, so that a part of the light generated by the light-emitting devices The light that directly enters the color conversion layer and is converted into other colors, and another part of the light emitted to the barrier wall in the isolation structure will be reflected into the color conversion layer to be converted into light of other colors, thereby improving the luminescence The utilization rate of the light emitted by the device and the corresponding color conversion efficiency, and since the color conversion layer is also located between two adjacent isolation structures, the pixel isolation layer in the isolation structure can also prevent the light converted by the color conversion layer from Crosstalk occurs between them.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings that need to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application. For those skilled in the art, other drawings can also be obtained based on these drawings without any creative effort.

FIG. 1 is a schematic cross-sectional structure diagram of a display panel provided by an embodiment of the present invention;

2 is a schematic flowchart of a method for manufacturing a display panel provided by an embodiment of the present invention;

3A to 3F are schematic cross-sectional structural diagrams of the display panel at each stage of the manufacturing method provided by the embodiment of the present invention;

FIG. 4 is a schematic flowchart of step S102.

Embodiments of the present invention

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the drawings in the embodiments of the present invention. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative efforts fall within the protection scope of the present invention.

In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", " Orientation indicated by rear, left, right, vertical, horizontal, top, bottom, inside, outside, clockwise, counterclockwise, etc. The positional relationship is based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, Therefore, it should not be construed as limiting the invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly specifying the quantity of indicated technical features. Thus, a feature defined as "first" and "second" may explicitly or implicitly include one or more of these features. In the description of the present invention, "plurality" means two or more, unless otherwise specifically defined.

In the description of the present invention, it should be noted that unless otherwise specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected, or electrically connected, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction of two components relation. Those of ordinary skill in the art can understand the specific meanings of the above terms in the present invention according to specific situations.

In the present invention, unless otherwise clearly specified and limited, a first feature being "on" or "under" a second feature may include direct contact between the first and second features, and may also include the first and second features Not in direct contact but through another characteristic contact between them. Moreover, "above", "above" and "above" the first feature on the second feature include that the first feature is directly above and obliquely above the second feature, or simply means that the first feature is horizontally higher than the second feature. "Below", "beneath" and "under" the first feature to the second feature include that the first feature is directly below and obliquely below the second feature, or simply means that the first feature has a lower level than the second feature.

The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present disclosure may repeat reference numerals and/or reference letters in different instances, such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or arrangements discussed. In addition, various specific process and material examples are provided herein, but one of ordinary skill in the art may recognize the use of other processes and/or the use of other materials.

Please refer to FIG. 1 . FIG. 1 is a schematic cross-sectional structure diagram of a display panel provided by an embodiment of the present invention. As shown in FIG. 1 , the display panel 10 includes a driving substrate 11 , a light source assembly 12 and a color filter substrate 13 . The driving substrate 11 includes a first substrate 111 and a thin film transistor layer 112 disposed on the first substrate 111 . The light source assembly 12 includes a plurality of light emitting devices 121, a plurality of spaced isolation structures 122 and a plurality of color conversion layers 123, the plurality of light emitting devices 121 and the plurality of spaced isolation structures 122 are disposed on the thin film transistor layer 112 Above, the plurality of color conversion layers 123 are respectively disposed on the plurality of light emitting devices 121 , and each of the color conversion layers 123 and each of the light emitting devices 121 is disposed between two adjacent isolation structures 122 . The color filter substrate 13 includes a second substrate 132 and a color filter layer 131 disposed on the second substrate 132, and the color filter substrate 13 is provided with a side of the color filter layer 131 facing the plurality of color conversion layers. 123 and the plurality of isolation structures 122 arranged at intervals. Wherein, the isolation structure 122 includes a barrier wall 1221 and a pixel isolation layer 1222 sequentially stacked on the thin film transistor layer 112 .

In this embodiment, each light emitting device 121 is arranged between two adjacent isolation structures 122, and the plurality of color conversion layers 123 are respectively arranged on the plurality of light emitting devices 121, so that the light generated by the light emitting device 121 Part of the light is directly incident into the color conversion layer 123 and converted into light of other colors, and another part of the light emitted to the barrier wall 1221 in the isolation structure 122 will be reflected into the color conversion layer 123 to be converted into light of other colors , thereby improving the utilization rate of light emitted by the light emitting device 121, and also improving the color conversion efficiency, and since the color conversion layer 123 is also located between two adjacent isolation structures 122, the pixel isolation layer in the isolation structure 122 1222 can also prevent crosstalk between the light converted by the color conversion layer 123 .

Specifically, the blocking wall 1221 is used to reflect the light emitted by the light-emitting device 121 and received by the blocking wall 1221 (this part of the light is the light before color conversion) into the color conversion layer 123, so as to improve the output of the light-emitting device 121. The utilization rate of the incident light and improve the color conversion efficiency. The color image isolation layer 122 is used to avoid crosstalk between the light converted by the color conversion layer 123. Specifically, it can change the outgoing angle of the light with a larger divergence angle through reflection, so as to avoid the light from adjacent two The light emitted by the color conversion layer 123 intersects to generate crosstalk; it is also possible to directly absorb light with a larger divergence angle through absorption, thereby avoiding crosstalk; therefore, the color isolation layer 122 can also Combining reflection and absorption to avoid the occurrence of light crosstalk.

In order to make the light converted by the color conversion layer 123 easy to emit outward, it is preferable to set the cross-sectional shape of the image-color isolation layer 1222 in the height direction of the isolation structure 122 (that is, in the z direction in FIG. 1 ) to be a positive trapezoid. , that is, the width of the pixel isolation layer 1222 (that is, the width distributed along the x direction in FIG. 1 ) can be set to gradually decrease along the direction away from the thin film transistor layer 112, so that the light is emitted from the color conversion layer 123 to When the pixel isolation layer 1222 is on the pixel isolation layer 1222, the outgoing direction of the light will be changed by the pixel isolation layer 1222 to a direction away from the light emitting device 121, which is more conducive to the outgoing light. As a comparison, when the cross-sectional shape of the color image isolation layer 1222 in the height direction of the isolation structure 122 is an inverted trapezoid, so that when the light is emitted from the color conversion layer 123 to the pixel isolation layer 1222, the emission direction of the light will be determined. The direction of the pixel isolation layer 1222 is changed to be close to the light emitting device 121, so that it is not conducive to the outgoing light. Since the blocking wall 1221 is used to reflect light back into the color conversion layer 123 , the cross-sectional shape of the blocking wall 1221 in the height direction of the isolation structure 122 may be any shape of rectangle or trapezoid.

Considering that the light generated by the light emitting device 121 itself has a certain divergence angle, for example, the light emitting device can be a blue light Micro For LEDs, the corresponding divergence angle ranges from 120° to 150°. Therefore, the height of the blocking wall 1221 needs to be set higher than the height of the light emitting device 121 , for example, the height of the blocking wall 1221 can be set to 10 μm˜20 μm. However, in this embodiment, it is preferable to set the height difference between the retaining wall 1221 and the light emitting device 121 to be between one tenth and one half of the height of the light emitting device 121 (for example, 1/10, 1/9 , 1/8, 1/7, 1/6, 1/5, 1/4, 1/3, 1/2, etc.), so that when the light generated by the light emitting device 121 has a divergence angle and the divergence angle also has a certain range , can also reflect the light in this range to the color conversion layer 123 . In addition, in order to better reflect the light generated by the light-emitting device 121 and reduce the absorption of light, it is preferable that the material of the barrier 1221 is a material with high reflectivity, such as a white glue layer. Specifically, the reflectivity of the material of the barrier wall 1221 can be set to be greater than 85%.

Specifically, the material of the retaining wall 1221 includes organic materials and inorganic materials, wherein the organic materials include one or more of BT resin, silica gel, methyl methacrylate (MMA), and polyimide (PI); BT resin is a thermosetting resin with bismaleimide (BMI) and triazine as the main resin components, and adding epoxy resin, polyphenylene ether resin (PPE) or allyl compound as modified components. ; the inorganic material includes one or more of titanium dioxide (TiO ₂ ) and tantalum pentoxide (Ta ₂ O ₅ ).

Since the pixel isolation layer 1222 is used to avoid crosstalk between the light converted by the color conversion layer 123, and when the color image isolation layer 1222 has a certain absorption effect, it can also prevent light crosstalk. Therefore, the reflectivity of the pixel isolation layer 1222 can be appropriately lower than that of the barrier wall 1221 , therefore, the material of the pixel isolation layer 1222 can be different from that of the barrier wall 1221 , thereby expanding the selection range of the material of the pixel isolation layer 1222 . The pixel isolation layer 1222 can be made of a material with a certain reflectivity, such as a material with a reflectivity greater than 50%, so that the reflection effect on light is greater than the absorption effect, and the utilization rate of light is further improved.

It should be further explained that since the light converted by the color conversion layer 123 also has a certain divergence angle, in this embodiment, the sum of the heights of the light emitting device 121 and the color conversion layer 123 is preferably less than or equal to the height of the isolation structure 122 In other words, the sum of the heights of the light-emitting device 121 and the color conversion layer 123 is less than or equal to the sum of the heights of the barrier wall 1221 and the color-image isolation layer 1222, thereby improving the anti-crosstalk effect of the isolation structure 122. The color conversion layer 123 is used to convert the color of the light generated by the light emitting device 121 into light of other colors. In this embodiment, the color conversion layer 123 is used to convert the color of the light generated by the light emitting device 121 into white light. The color conversion layer 123 adopts the entire surface coating process, including spin coating, doctor blade coating, spray coating and other process processes, and does not need the equipment and materials required by the inkjet printing or photolithography process required by the patterning process. Therefore, this implementation The color conversion layer 123 in this example can also reduce the manufacturing cost, and because the manufacturing process is simple. Process efficiency can also be improved.

In order to achieve the corresponding color conversion effect, the color conversion layer 123 includes at least one of quantum dot material, phosphor material, phosphorescent photoluminescent material and organic photoluminescent material, wherein the quantum dot material can specifically be CdS/CdSe/ For perovskite quantum dots such as InP, the phosphor material can be YAG/silicate phosphor/nitride phosphor, and the phosphorescent photoluminescent material can be KSF. The spectral range and wavelength range of the color conversion of the color conversion layer 123 is 500nm~600nm (the intensity is measured by 10% of the peak intensity).

The luminescent color combination of the color conversion material corresponding to the color conversion layer 123 may be a combination of green light (G) and red light (R), yellow light (Y), a combination of yellow light (Y) + red light (R), Combination of green light (G) + orange light (O), etc.

After the color conversion layer 123 converts the color of the light generated by the light-emitting device 121 into white, the corresponding white light will be incident into the color filter layer 131, and the color filter layer 131 will filter the corresponding white light to achieve full-color display. Light of desired color. Specifically, the color filter layer 131 includes a plurality of color resistance units 1312 and a plurality of black matrix units 1311 arranged at intervals, the plurality of color resistance units 1312 correspond to the plurality of light emitting devices 121 one by one, and each of the color resistance units The unit 1312 is disposed between two adjacent black matrix units 1311 . The white light obtained by passing through each light-emitting device 121 and the color conversion layer 123 is filtered by each color-resisting unit 1312 into light of other colors, such as red light, blue light, green light, white light, magenta light, magenta yellow light, and cyan light. The light, which is then filtered from white light to become light of other colors, will pass through the second substrate 132 and emit outwards, thereby realizing full-color display. A plurality of black matrix units 1311 arranged at intervals prevents crosstalk between light before and after filtering by each color-resist unit 1312 , and at the same time increases the contrast of full-color display.

Wherein, the color resistance unit 1312 is any one of red, green and blue color resistance units. Therefore, according to the selection of the color-resist unit 1312, the pixel combination structure design such as R, G, B, W, M and Y can be realized, wherein M is magenta and includes two colors of B+R, and Y is magenta and yellow. Contains G+R two colors, C is cyan and contains B+G two colors.

Wherein, the material of the black matrix unit 1311 may include black resin material, Mo or MoOx and other materials with low reflectivity.

Wherein, the display panel 10 further includes an adhesive layer 14 disposed between the color filter substrate 13 and the light source assembly 12 . The adhesive layer 14 is specifically used to bond the color filter layer 131 with the color conversion layer 123 and the pixel barrier layer 1222, and since the sum of the heights of the light emitting device 121 and the color conversion layer 123 is less than or equal to the height of the isolation structure 122, therefore, Part of the adhesive layer 14 may or may not extend between two adjacent isolation structures 122 . The material of the adhesive layer 14 is selected as a light-transmitting material, so that the light converted by the color conversion layer 123 can pass through the adhesive layer 14 and enter the color filter layer 131 .

Please refer to FIG. 2 , an embodiment of the present invention also provides a method for manufacturing a display panel, which can be used to form the display panel 10 provided in the above embodiment. As shown in FIG. 2 , the manufacturing method may include the following steps:

Step S101: providing a driving substrate, the driving substrate includes a first substrate and a thin film transistor layer disposed on the first substrate.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S101 is completed is shown in FIG. 3A .

Specifically, a TFT circuit (not shown in the figure) for controlling the on and off of the light emitting device is formed in the thin film transistor layer 112 .

Step S102: forming a light source assembly comprising a plurality of light emitting devices, a plurality of spaced isolation structures, and a plurality of color conversion layers on the thin film transistor layer, the plurality of light emitting devices and the plurality of spaced isolation structures are disposed on the On the thin film transistor layer, the isolation structure includes barrier walls and pixel isolation layers stacked on the thin film transistor layer in sequence, the plurality of color conversion layers are respectively disposed on the plurality of light emitting devices, and each of the color conversion layers and each The light emitting device is arranged between two adjacent isolation structures.

Wherein, referring to FIG. 4, step S102 may specifically include the following steps:

Step S1021: forming the plurality of light emitting devices on the thin film transistor layer.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S1021 is completed is shown in FIG. 3B .

Specifically, the step of forming the plurality of light emitting devices 121 on the thin film transistor layer 112 includes: forming an electrode structure 124 on the thin film transistor layer 112 , and then transferring the plurality of light emitting devices 121 to the thin film transistor layer 112 in large quantities. and electrically connected to the electrode structure 124. The electrode structure 124 is used to electrically connect the light emitting device 121 with the TFT circuit in the thin film crystal optical layer 112 , so as to control whether the light emitting device 121 emits light or not.

It should be further explained that, in this embodiment, the light-emitting device 121 can be a blue Micro LED. Therefore, compared with using a red-light Micro LED, the light-emitting device 121 in this embodiment has a higher emission efficiency, and the corresponding power consumption is also lower. lower. It can be understood that when the plurality of light emitting devices 121 are all blue light emitting devices, since it is only necessary to transfer a single-color chip of blue light Micro LED, it is different from transferring red light Micro LED and green light Micro LED at the same time. Compared with the technical solution of LED and blue Micro LED, in this embodiment, the transfer efficiency of LED chips can be increased by 3 times, and the transfer cost can be reduced; in addition, because the cost of blue Micro LED chips is lower than that of red Micro LED chips The cost of LED chips and green Micro LED chips is low, so the cost of using LED chips can be further reduced.

Step S1022: forming the plurality of barrier walls arranged at intervals on the thin film transistor layer, so that each light emitting device is located between two adjacent barrier walls.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S1022 is shown in FIG. 3C . The retaining wall 1221 is formed by spraying process. Specifically, the blocking wall 1221 is used to reflect the light emitted by the light-emitting device 121 and received by the blocking wall 1221 (this part of the light is the light before color conversion) into the color conversion layer 123, so as to improve the output of the light-emitting device 121. The utilization rate of the incident light and improve the color conversion efficiency.

Step S1023: Correspondingly forming a plurality of pixel isolation layers on the retaining walls arranged at intervals;

Wherein, a schematic cross-sectional structure diagram of the display panel after step S1023 is shown in FIG. 3D . Specifically, the image-color isolation layer 1222 is formed by scraping or screen printing. The image-color isolation layer 1222 is used to avoid crosstalk between the light converted by the color conversion layer formed in the subsequent step S1024. Specifically, it can change the outgoing angle of the light with a large divergence angle through reflection, so as to avoid The light emitted from two adjacent color conversion layers intersects to generate crosstalk; it is also possible to directly absorb light with a larger divergence angle through absorption, thereby avoiding crosstalk.

Step S1024: Correspondingly forming the multiple color conversion layers on the multiple light emitting devices.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S1024 is completed is shown in FIG. 3E .

Specifically, the color conversion layer 123 is used to convert the color of the light generated by the light emitting device 121 into light of other colors. In this embodiment, the color conversion layer 123 is used to convert the color of the light generated by the light emitting device 121 into white light. And after the color conversion layer 123 is formed on the light emitting device 121 , the height of the light emitting device 121 and the color conversion layer 123 is less than or equal to the sum of the heights of the barrier wall 1221 and the color image isolation layer 1222 .

The color conversion layer 123 adopts the entire surface coating process, including spin coating, doctor blade coating, spray coating and other process processes, and does not require the inkjet printing required by the patterning process or the equipment and materials required by the photolithography process. Therefore, the present invention The color conversion layer 123 in the embodiment can also reduce the manufacturing cost, and because the manufacturing process is simple, it can also improve the process efficiency.

Step S103: providing a color filter substrate, which includes a second substrate and a color filter layer disposed on the second substrate.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S103 is completed is shown in FIG. 3F .

Specifically, the color filter layer 131 includes a plurality of color resistance units 1312 and a plurality of black matrix units 1311 arranged at intervals, the plurality of color resistance units 1312 correspond to the plurality of light emitting devices 121 one by one, and each of the color resistance units The unit 1312 is disposed between two adjacent black matrix units 1311 .

Step S104: adhering the side of the color filter substrate provided with the color filter layer to the plurality of color conversion layers and the plurality of spaced isolation structures.

Wherein, a schematic cross-sectional structure diagram of the display panel after step S104 is completed is shown in FIG. 1 .

Specifically, in step S104, an adhesive layer 14 is arranged between the side of the color filter substrate 13 on which the color filter layer 131 is provided and the plurality of color conversion layers 123 and the plurality of spaced isolation structures 122 , so as to connect the color filter substrate 13 to the light source assembly 12 . Specifically, after the color conversion layer 123 converts the color of the light generated by the light emitting device 121 into white, the corresponding white light will be incident into the color filter layer 131, and the color filter layer 131 will filter the corresponding white light to realize full Color display the light of the desired color. Through each color-resisting unit 1312 in the color filter layer 131, the filtered white light obtained by each light-emitting device 121 and each color conversion layer 123 becomes light of other colors, such as red light, blue light, green light, white light, and magenta. Light, magenta light, and cyan light, after which white light is filtered to become light of other colors will pass through the second substrate 132 and emit to the outside, thereby realizing full-color display. A plurality of black matrix units 1311 arranged at intervals prevents crosstalk between light before and after filtering by each color-resist unit 1312 , and at the same time increases the contrast of full-color display.

The present invention also provides a display device, including the display panel 10 provided in the above embodiments.

Since the display device may include the display panel provided in this embodiment, it can achieve the beneficial effects achieved by the display panel provided in this embodiment. For details, refer to the previous embodiments, which will not be repeated here.

The beneficial effect of the present invention is that: in the display panel provided by the present invention, each light-emitting device is arranged between two adjacent isolation structures, and the color conversion layer is arranged on a plurality of light-emitting devices, so that a part of the light generated by the light-emitting devices The light that directly enters the color conversion layer and is converted into other colors, and another part of the light emitted to the barrier wall in the isolation structure will be reflected into the color conversion layer to be converted into light of other colors, thereby improving the luminescence The utilization rate of the light emitted by the device and the corresponding color conversion efficiency, and since the color conversion layer is also located between two adjacent isolation structures, the color-image isolation layer in the isolation structure can also avoid the color conversion after conversion by the color conversion layer. Crosstalk occurs between light rays.

In addition to the above-mentioned embodiments, the present invention can also have other implementations. All technical solutions formed by equivalent replacement or equivalent replacement fall within the scope of protection required by the present invention.

In summary, although the preferred embodiments of the present invention have been disclosed above, the above preferred embodiments are not intended to limit the present invention, and those of ordinary skill in the art can make various modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be determined by the scope defined in the claims.

Claims

A display panel comprising:

a driving substrate, the driving substrate comprising a first substrate and a thin film transistor layer disposed on the first substrate;

A light source component, the light source component comprising a plurality of light emitting devices, a plurality of spaced isolation structures and a plurality of color conversion layers, the plurality of light emitting devices and the plurality of spaced isolation structures are disposed on the thin film transistor layer Above, the plurality of color conversion layers are respectively disposed on the plurality of light emitting devices, and each of the color conversion layers and each of the light emitting devices is disposed between two adjacent isolation structures;

A color filter substrate, the color filter substrate includes a second substrate and a color filter layer disposed on the second substrate, the color filter substrate is provided with a side facing the plurality of color filter layers a color conversion layer and an isolation structure arrangement of the plurality of interval arrangements;

Wherein, the isolation structure includes a barrier wall and a pixel isolation layer sequentially stacked on the thin film transistor layer.
The display panel according to claim 1, wherein the sum of the heights of the light emitting device and the color conversion layer is less than or equal to the height of the isolation structure.
The display panel according to claim 1, wherein a height of the barrier wall is greater than a height of the light emitting device.
The display panel according to claim 3, wherein the height difference between the barrier wall and the light emitting device is between one tenth and one half of the height of the light emitting device.
The display panel according to claim 1, wherein the width of the pixel isolation layer gradually decreases along a direction away from the thin film transistor layer.
The display panel according to claim 1, wherein the retaining wall is a white glue layer, and the reflectivity of the retaining wall is greater than 85%.
The display panel according to claim 1, wherein the display panel further comprises an adhesive layer disposed between the color filter substrate and the light source assembly.
A method of manufacturing a display panel, comprising:

providing a driving substrate, the driving substrate comprising a first substrate and a thin film transistor layer disposed on the first substrate;

A light source assembly comprising a plurality of light emitting devices, a plurality of spaced isolation structures and a plurality of color conversion layers is formed on the thin film transistor layer, the plurality of light emitting devices and the plurality of spaced isolation structures are disposed on the On the thin film transistor layer, the isolation structure includes sequentially stacked on the thin film

The barrier wall and the pixel isolation layer on the transistor layer, the plurality of color conversion layers are respectively arranged on the plurality of light emitting devices, and each of the color conversion layers and each of the plurality of light emitting devices are arranged on adjacent two Between said isolation structures;

A color filter substrate is provided, the color filter substrate includes a second substrate and a color filter layer disposed on the second substrate;

The side of the color filter substrate provided with the color filter layer is adhered to the plurality of color conversion layers and the plurality of spaced isolation structures.
The method for manufacturing a display panel according to claim 8, wherein the step of forming a plurality of light emitting devices, a plurality of spaced apart isolation structures and a plurality of color conversion layers on the thin film transistor layer comprises:

forming the plurality of light emitting devices on the thin film transistor layer;

Forming a plurality of barrier walls arranged at intervals on the thin film transistor layer, so that each of the light-emitting devices is located between two adjacent barrier walls;

Correspondingly forming a plurality of pixel isolation layers on the plurality of barrier walls arranged at intervals;

The plurality of color conversion layers are correspondingly formed on the plurality of light emitting devices.
The method for manufacturing a display panel according to claim 8, wherein the side of the color filter substrate on which the color filter layer is provided is adhered to the plurality of color conversion layers and the plurality of spaced color conversion layers. In the step on the isolation structure, an adhesive layer is provided between the side of the color filter substrate on which the color filter layer is provided and the plurality of color conversion layers and the plurality of isolation structures arranged at intervals, so as to Connecting the color filter substrate to the light source assembly.
A display device comprising the display panel as claimed in claim 1.