WO2021073282A1 - FULL-COLOR μLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME - Google Patents

FULL-COLOR μLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME Download PDF

Info

Publication number
WO2021073282A1
WO2021073282A1 PCT/CN2020/112394 CN2020112394W WO2021073282A1 WO 2021073282 A1 WO2021073282 A1 WO 2021073282A1 CN 2020112394 W CN2020112394 W CN 2020112394W WO 2021073282 A1 WO2021073282 A1 WO 2021073282A1
Authority
WO
WIPO (PCT)
Prior art keywords
μled
driving electrode
light source
light
transparent
Prior art date
Application number
PCT/CN2020/112394
Other languages
French (fr)
Chinese (zh)
Inventor
张永爱
陈诗瑶
郭太良
周雄图
吴朝兴
林志贤
孙磊
严群
Original Assignee
福州大学
闽都创新实验室
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 福州大学, 闽都创新实验室 filed Critical 福州大学
Priority to US17/768,472 priority Critical patent/US20230352642A1/en
Priority to EP20877783.9A priority patent/EP4044237A4/en
Publication of WO2021073282A1 publication Critical patent/WO2021073282A1/en

Links

Classifications

    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/2003—Display of colours
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0756—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0041—Devices characterised by their operation characterised by field-effect operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0421—Structural details of the set of electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the invention relates to the field of integrated semiconductor displays, in particular to a full-color ⁇ LED micro-display device without electrical contact and a manufacturing method thereof.
  • micron LED display In the field of flat panel display technology, micron LED display ( ⁇ LED display for short) refers to miniaturizing traditional LEDs to form a micron-pitch LED array to achieve ultra-high-density pixel resolution.
  • ⁇ LED display has self-luminous characteristics. Compared with OLED and LCD displays, ⁇ LED display has low power consumption, high brightness, ultra-high definition, high color saturation, faster response speed, longer service life and higher work Efficiency, etc.; in addition, the ⁇ LED display is the only display device capable of driving, emitting, and signal transmission with high luminous efficiency and low power consumption, and realizing a super-large-scale integrated light-emitting unit, due to high density, small size, and super multi-pixel The characteristics of ⁇ LED display will become the leader of the third-generation display technology with high-fidelity, interactive and personalized display as the main features.
  • full-color ⁇ LED displays are generally epitaxially grown on GaN or GaAs substrates by metal organic chemical vapor deposition (MOCVD), and red, green and blue ⁇ LED chips are prepared through multiple processes.
  • the primary color ⁇ LED chip and the driving chip are bound on the circuit substrate to form full-color three-color display pixels.
  • This technology requires precise alignment and bonding to achieve precise electrical contact between the driving electrodes in the ⁇ LED chip and the driving module.
  • a large number of ⁇ LED dies are picked up, placed and assembled; in terms of colorization technology, it can also be achieved through methods such as color conversion, optical prism synthesis, and by controlling the structure and size of the LED to emit light of different wavelengths.
  • the present invention provides a full-color ⁇ LED microdisplay without electrical contact.
  • the upper and lower driving electrodes in the device do not have electrical contact with the p-type semiconductor layer and the n-type semiconductor layer in the ⁇ LED die, and the control module is respectively connected with the upper driving electrode.
  • the lower drive electrode is electrically connected to provide alternating drive signals for the upper drive electrode and the lower drive electrode, and a drive electric field is formed between the upper drive electrode and the lower drive electrode, and the alternating drive electric field controls the electrons of the ⁇ LED die.
  • the first light source is combined with the hole and emits the first light source, the first light source excites the second light source of the wavelength down-conversion light-emitting layer, the first light source and the second light source are converted into a uniform third light source after passing through the reflection layer and the diffusion layer.
  • the three light sources are transformed into red light, green light and blue light through the color filter film to realize a full-color ⁇ LED micro-display.
  • the invention can avoid the complicated manufacturing process of the three primary color chips in the ⁇ LED light-emitting device, the complicated bonding of the light-emitting chip and the driving chip, and the massive transfer process of the ⁇ LED chip, effectively reducing the production cycle and production cost of the ⁇ LED device, and it is expected to greatly Improve the market competitiveness of full-color ⁇ LED displays.
  • the purpose of the present invention is to overcome the shortcomings of the prior art and provide a full-color ⁇ LED display device with no electrical contact and no massive transfer. There is no direct contact between the upper driving electrode, the lower driving electrode and the blue ⁇ LED die of the device. Electrical contact to form an independent space; the control module is electrically connected to the upper driving electrode and the lower driving electrode to provide an alternating driving signal for the upper and lower driving electrodes, and between the upper driving electrode and the lower driving electrode The formed driving electric field, under the control of the driving electric field, the electrons and holes of the ⁇ LED die recombine and emit a first light source.
  • the first light source is converted into a second light source through the wavelength down conversion of the light-emitting layer, and the first light source and the second light source are reflected
  • the layer and the diffusion layer are mixed to form a uniform third light source; the third light source realizes a full-color ⁇ LED micro-display through the color filter film.
  • the present invention provides a full-color ⁇ LED display device with no electrical contact and no massive transfer, which can effectively avoid the complicated manufacturing process of the red/green/blue three-primary color ⁇ LED chip, and at the same time can avoid the problem of the ⁇ LED light-emitting chip and the driving chip.
  • the complex bonding process and the massive transfer process effectively shorten the production cycle of ⁇ LED and reduce the production cost of ⁇ LED display, which is expected to greatly improve the market competitiveness of full-color ⁇ LED display.
  • the technical solution of the present invention is: a full-color ⁇ LED microdisplay device without electrical contact, including: a transparent lower substrate, a transparent upper substrate, blue ⁇ LED dies, a wavelength down conversion light-emitting layer, a control module,
  • the sealing frame body connecting the transparent upper substrate and the transparent lower substrate, the exhaust port provided on the transparent upper substrate, the color filter film provided on the transparent upper substrate, the reflective layer provided on the surface of the transparent lower substrate, and the air outlet provided on the transparent upper substrate.
  • the upper driving electrode and the lower driving electrode are respectively arranged on both sides of the blue ⁇ LED die, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode, the lower driving electrode and the blue ⁇ LED die; There is no direct electrical contact between the upper driving electrode, the lower driving electrode and the blue ⁇ LED die, forming an independent space; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the The control module provides alternating drive signals for the upper and lower drive electrodes, and a drive electric field is formed between the upper drive electrode and the lower drive electrode, and the drive electric field controls the electrons and air of the ⁇ LED die.
  • the hole recombines and emits a first light source, the first light source is converted into a second light source by the wavelength down-conversion light-emitting layer, and the first light source passes through the reflective layer and then interacts with the second light source by the diffusion layer Then, it is mixed into a uniform third light source; the third light source realizes a full-color ⁇ LED micro-display through the color filter film.
  • the color filter film is disposed on the upper surface of the transparent upper substrate and corresponds to the upper driving electrode; the color filter film is formed in order along the direction of the upper driving electrode for red
  • the blue ⁇ LED die is formed by a plurality of blue ⁇ LED chips connected in series in a vertical direction, or a plurality of blue ⁇ LED chips are connected in parallel in a horizontal direction, or a plurality of blue ⁇ LED chips are arbitrarily stacked Obviously.
  • the blue ⁇ LED chip includes a p-type semiconductor material, a light-emitting structure, and an n-type semiconductor material, and the p-type semiconductor material, the light-emitting structure, and the n-type semiconductor material are stacked in a vertical direction to form a semiconductor junction.
  • the semiconductor junction includes one or a combination of a single semiconductor junction, a semiconductor pair junction, and multiple semiconductor junctions; the thickness of the P-type semiconductor material is 1 nm-2.0 ⁇ m, and the light emitting The thickness of the structure is 1 nm-1.0 ⁇ m, and the thickness of the N-type semiconductor material is 1 nm-2.5 ⁇ m.
  • the upper driving electrode is composed of a plurality of mutually parallel line electrodes, and is arranged on the surface of the upper transparent substrate along the horizontal direction of the ⁇ LED die;
  • the lower driving electrode is composed of A plurality of mutually parallel line electrodes are formed on the surface of the lower transparent substrate along the vertical direction of the ⁇ LED die, and the upper electrode and the lower electrode are perpendicular to each other.
  • the space between the two can be formed An independent space.
  • the wavelength down-conversion light-emitting layer may be disposed on the surface of the upper driving electrode and the lower driving electrode, or may be disposed on the outer surface of the ⁇ LED die, or may be combined with the ⁇ LED
  • the crystal grains are mixed and wrapped together, and are arranged in an independent space formed by the upper driving electrode and the lower driving electrode;
  • the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or may be yellow phosphor material, or may be It is a mixed material of yellow quantum dots and yellow phosphors;
  • the wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the irradiation of the first light source light emitted by the blue ⁇ LED die, and the second light source is yellow light .
  • control module can provide an alternating voltage whose amplitude and polarity change with time; the waveform of the alternating voltage is one of sine wave, triangle wave, square wave, and pulse. Or multiple composite waveforms; the frequency of the alternating voltage is 1 Hz-1000 MHz.
  • the present invention also provides a method for manufacturing a full-color ⁇ LED micro-display device based on the above-mentioned electrical contact, which is implemented according to the following steps:
  • Step S1 Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
  • Step S2 Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence;
  • the R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
  • Step S3 a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof.
  • Step S4 coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing, or knife coating;
  • Step S5 providing a wavelength down-converting light-emitting layer: coating a wavelength down-converting light-emitting layer on the surface of the upper driving electrode and the lower driving electrode by screen printing or inkjet printing, spraying or spin coating;
  • Step S6 providing a blue ⁇ LED chip: coating a layer of blue ⁇ LED chip on the surface of the wavelength conversion light-emitting layer by means of inkjet printing or scraping or spraying;
  • Step S7 the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
  • Step S8 Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the ⁇ LED die to recombine and emit a first light source, and the first light source is down-converted by the wavelength
  • the light-emitting layer is converted into a second light source, which is mixed into a uniform third light source after the reflective layer and the diffusion layer, and then becomes red, green, and blue light through the color filter film to realize a full-color ⁇ LED microdisplay .
  • the present invention also provides a method for manufacturing a full-color ⁇ LED micro-display device based on the above-mentioned electrical contact, which is implemented according to the following steps:
  • Step S1 Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
  • Step S2 Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence;
  • the R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
  • Step S3 Coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing or knife coating;
  • Step S4 a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof.
  • Step S5 Provide a blue ⁇ LED die
  • Step S6 Provide a wavelength down-conversion light-emitting layer: uniformly mix the wavelength down-conversion light-emitting layer and the blue ⁇ LED chip, and the ⁇ LED die and the wavelength down-conversion light-emitting layer are mixed and wrapped together, using screen printing Or the method of inkjet printing, spraying or spin coating is arranged on the surface of the lower driving electrode;
  • Step S7 the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
  • Step S8 Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the ⁇ LED die to recombine and emit a first light source.
  • the light-emitting layer is converted into a second light source, and after the reflection layer and the diffusion layer, the color filter film is changed into red light, green light, and blue light to realize a full-color ⁇ LED micro-display.
  • the present invention has the following beneficial effects:
  • the upper and lower driving electrodes in the full-color ⁇ LED microdisplay device proposed by the present invention have no electrical contact with the p-type semiconductor layer and the n-type semiconductor layer in the ⁇ LED die, which can effectively avoid the complicated manufacturing process of the ⁇ LED chip.
  • the production cycle of the ⁇ LED is shortened, and the production cost of the ⁇ LED display is reduced;
  • the control module provided by the present invention is electrically connected to the upper driving electrode and the lower driving electrode, and provides alternating driving signals for the upper driving electrode and the lower driving electrode, and is formed between the upper driving electrode and the lower driving electrode.
  • Drive electric field, in this drive mode, the luminous brightness of the non-electrically contacted ⁇ LED device can be effectively controlled by modulating the drive voltage and operating frequency;
  • the alternating drive electric field proposed in the present invention controls the electrons and holes of the ⁇ LED die to recombine and emit the first light source, the first light source excites the second light source of the wavelength down-conversion light-emitting layer, and the first light source and the second light source pass through the After the reflective layer and the diffusion layer are converted into a uniform third light source, the third light source is transformed into red, green, and blue light through the color filter film to realize a full-color ⁇ LED micro-display, which effectively improves the full range of non-electric contact
  • the manufacturing process and production cost of colorized ⁇ LED microdisplays are of great significance to the development and application of full-colorized ⁇ LED displays.
  • Fig. 1 is a schematic diagram of the structure of a full-color ⁇ LED micro-display without electrical contact according to the first embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the structure of arbitrarily placing ⁇ LED chips according to the first embodiment of the present invention.
  • FIG. 3 is a manufacturing flow chart of a full-color ⁇ LED microdisplay without electrical contact according to the first embodiment of the present invention.
  • Fig. 4 is a working principle diagram of a full-color ⁇ LED micro-display without electrical contact according to the first embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a full-color ⁇ LED micro-display without electrical contact according to the second embodiment of the present invention.
  • FIG. 6 is a schematic diagram of the structure of arbitrarily placing ⁇ LED chips according to the second embodiment of the present invention.
  • FIG. 7 is a manufacturing flow chart of a full-color ⁇ LED micro-display without electrical contact according to the second embodiment of the present invention.
  • FIG. 8 is a working principle diagram of a full-color ⁇ LED micro-display without electrical contact according to the second embodiment of the present invention.
  • 100 is a transparent lower substrate
  • 200 is a transparent upper substrate
  • 110 is a reflective layer
  • 210 is a diffusion layer
  • 120 is a lower driving electrode
  • 220 is an upper driving electrode
  • 300 is a wavelength down-conversion light-emitting layer
  • 400 is a ⁇ LED chip
  • 401 is an n-type semiconductor material
  • 402 is a p-type semiconductor material
  • 403 is a light-emitting structure
  • 500 is a frame body
  • 600 is an exhaust port
  • 700 is a color filter film
  • 701 is an R unit
  • 702 is a G unit
  • 703 is a In unit B
  • 704 is a black barrier layer
  • 800 is a control module
  • 111 is a first light source
  • 112 is a second light source
  • 113 is a third light source
  • 11 is red light
  • 12 is green light
  • 13 is blue light.
  • the thickness of the layers and regions are enlarged, but as a schematic diagram, it should not be considered as strictly reflecting the proportional relationship of geometric dimensions.
  • the reference figure is a schematic diagram of an idealized embodiment of the present invention.
  • the embodiment of the present invention should not be considered as limited to the specific shape of the area shown in the figure, but includes the resulting shape, such as deviations caused by manufacturing. In this embodiment, they are all represented by rectangles or circles, and the representation in the figures is schematic, but this should not be considered as limiting the scope of the present invention.
  • the size of the barrier rib undulating pattern and the undulating period have a certain range.
  • the size of the undulating pattern and its undulating period can be designed according to actual needs.
  • the value of the undulating period in the embodiment is only an exemplary value, but this should not be considered Limit the scope of the present invention. It should be noted that the terms used here are only for describing specific embodiments, and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and/or “including” are used in this specification, they indicate There are features, steps, operations, devices, components, and/or combinations thereof.
  • the present invention provides a full-color ⁇ LED microdisplay device without electrical contact, comprising: a transparent lower substrate, a transparent upper substrate, a blue ⁇ LED die, a wavelength down-conversion light-emitting layer, a control module, which connects the transparent upper substrate and the transparent
  • the frame sealing body of the lower substrate is arranged on the exhaust port of the transparent upper substrate and the color filter film; the reflective layer and the lower driving electrode are arranged on the surface of the lower substrate, the diffusion layer and the upper driving electrode are arranged on the surface of the transparent upper substrate;
  • the upper driving electrode and the lower driving electrode are arranged on both sides of the blue ⁇ LED die, the wavelength down-converting light-emitting layer is arranged between the upper driving electrode and the blue ⁇ LED die, and the lower driving The wavelength down conversion light-emitting layer is arranged between the electrode and the blue ⁇ LED die; there is no direct electrical contact between the upper driving electrode, the lower driving electrode and the blue ⁇ LED die, forming an independent space;
  • the control module is electrically connected to the upper drive electrode and the lower drive electrode, and the control module provides alternating drive signals for the upper and lower drive electrodes, and drives the upper drive electrode and the lower drive electrode.
  • the first light source and the second light source are mixed to form a uniform third light source after passing through the reflective layer and the diffusion layer; the third light source realizes a full-color ⁇ LED micro-display through a color filter film.
  • the first embodiment of the present invention provides a full-color ⁇ LED microdisplay device without electrical contact, including: a transparent lower substrate 100, a transparent upper substrate 200, a blue ⁇ LED die, and a wavelength down-conversion light-emitting layer 300, control module 800, connecting the upper transparent substrate and the lower transparent substrate, the sealing frame body 500 and the exhaust sealing opening 600, and the color filter film 700; the reflective layer 110 and the lower driving electrode 120 are arranged on the surface of the lower substrate , The diffusion layer 210 and the upper driving electrode 220 disposed on the surface of the transparent upper substrate; it is also characterized by:
  • the upper driving electrode 210 and the lower driving electrode 110 are arranged on both sides of the blue ⁇ LED die 400, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode 210 and the blue ⁇ LED die 400 300.
  • the wavelength down conversion light-emitting layer 300 is provided between the lower driving electrode 110 and the blue ⁇ LED die 400; between the upper driving electrode 210, the lower driving electrode 110 and the blue ⁇ LED die 400 There is no direct electrical contact, and an independent space is formed; the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, and the control module 600 is the upper driving electrode 210 and the lower driving electrode.
  • the electrode 110 provides an alternating driving signal, and a driving electric field is formed between the upper driving electrode 210 and the lower driving electrode 110.
  • the driving electric field controls the electrons and holes of the ⁇ LED die 400 to recombine and emit the first A light source 111, the first light source 111 is excited by the wavelength down-conversion light-emitting layer to become a second light source 112, the first light source 111 and the second light source 112 are mixed to form a third light source 113, and the third light source After passing through the reflective layer and the diffusion layer, 113 is transformed into red light 11, green light 12, and blue light 13 through the color filter film 700 to realize a full-color ⁇ LED micro-display.
  • the present invention provides a method for manufacturing a full-color ⁇ LED microdisplay device without electrical contact.
  • the specific steps are as follows:
  • Step S1 Provide a transparent upper substrate 200 with an exhaust port 600, and sequentially deposit a diffusion layer 210 and an upper driving electrode 220 on one surface of the transparent upper substrate 200 by physical vapor or chemical vapor deposition, printing or inkjet printing.
  • the diffusion layer 210 mixes the first light source 111 and the second light source 112 into a uniformly luminous third light source 113;
  • the upper driving electrode 220 is a transparent electrode, and the material of the transparent electrode can be but not limited to Graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires and combinations thereof;
  • Step S2 Prepare a color filter film 700 on the surface of the transparent upper substrate 200 by photolithography or screen printing, the color filter film R unit 701, G unit 702, and B unit 703 and the upper driving electrode 220 one-to-one correspondence; the R unit, G unit and B unit are arranged at equal intervals, and the black barriers 704 are directly filled next to each other.
  • Step S3 A transparent lower substrate 100 is provided, and the reflective layer 110 and the lower driving electrode 120 are deposited on the surface of the transparent lower substrate 100 by physical vapor or chemical vapor deposition, printing or inkjet printing.
  • the reflective layer reflects the first light source 111, the second light source 112, and the third light source 113 after the first light source 111 and the second light source are mixed, thereby improving device efficiency; the lower driving electrode
  • the materials can be, but are not limited to, gold, silver, aluminum, copper and their alloys or laminated structures.
  • Step S4 coating the frame sealing body 500 around the transparent lower substrate 200 by using screen printing, inkjet printing or knife coating,
  • Step S5 Provide a wavelength down-conversion light-emitting layer 300.
  • the wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the light from the first light source emitted by the blue ⁇ LED die, and the second light source is yellow light; the wavelength down-conversion light-emitting layer may be disposed on The surface of the upper driving electrode and the lower driving electrode may also be arranged on the outer surface of the ⁇ LED die, or may be mixed and coated with the ⁇ LED die, and arranged on the upper driving electrode and the upper driving electrode.
  • the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or yellow phosphor material, or a mixed material of yellow quantum dot and yellow phosphor.
  • the yellow phosphor 400 is preferably coated on the surfaces of the lower driving electrode 120 and the upper driving electrode 220 by a printing process.
  • Step S6 Provide a blue ⁇ LED die.
  • the blue ⁇ LED die is formed by a plurality of blue ⁇ LED chips connected in series in a vertical direction, or may be formed by connecting a plurality of blue ⁇ LED chips in parallel in a horizontal direction, or may be formed by arbitrarily stacking a plurality of blue ⁇ LED chips;
  • the blue ⁇ LED chip Including p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials (the p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials can use organic materials, inorganic materials, or polymer materials), the p-type semiconductor materials, light-emitting structures And n-type semiconductor materials are stacked in a vertical direction to form a semiconductor junction;
  • the semiconductor junction may include, but is not limited to, a single semiconductor junction (pn junction), a semiconductor pair junction (pnp, npn junction), multiple semiconductor junctions, and combinations thereof.
  • the thickness of the P-type semiconductor material is 1 nm-2.0 ⁇ m
  • the thickness of the light-emitting structure is 1 nm-1.0 ⁇ m
  • the thickness of the N-type semiconductor material is 1 nm-2.5 ⁇ m.
  • the thickness of the P-type semiconductor material 402 is 0.2 ⁇ m
  • the thickness of the light emitting structure 403 is 0.1 ⁇ m
  • the n-type semiconductor material 401 The thickness is 0.4 ⁇ m, as shown in Figure 3.
  • Step S7 the upper and lower transparent substrates 100 and 200 are aligned and packaged, and then degassed and sealed off through the exhaust port 600.
  • Step S8 Provide a control module 800.
  • the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, respectively, and the control module 800 provides alternating driving signals for the upper driving electrode 210 and the lower driving electrode 110, and is connected to the upper driving electrode 210 and the lower driving electrode 110.
  • the driving electric field formed between the upper driving electrode 210 and the lower driving electrode 110, the driving electric field controls the electrons and holes of the ⁇ LED die to recombine and emit the first light source 111.
  • the wavelength down-converts the light-emitting layer to convert it into a second light source 112, which is mixed into a uniform third light source 113 through the reflective layer and the diffusion layer, and becomes red light 11, green light 12, and blue light through the color filter film 700 13 and realize full-color ⁇ LED micro-display.
  • the present invention provides a full-color ⁇ LED microdisplay device without electrical contact.
  • the working principle is as follows:
  • the control module 800 applies an AC signal
  • the P-type semiconductor materials 402 in the plurality of ⁇ LEDs 400 provide hole diffusion
  • the n-type semiconductor material 401 provides electrons to diffuse into the light emitting structure 403.
  • the electrons and holes recombine in the light emitting structure 403 to emit the first light source 111; the first light source 111 excites the surface of the upper driving electrode 220 and the lower driving electrode 110.
  • the yellow quantum dot light-emitting layer 300 emits a second light source 112.
  • the first light source 111 and the second light source 112 are mixed into a uniform third light source 113 after the reflective layer 110 and the diffusion layer 210; the third light source 113 is transformed by the color filter film 700 Red light 11, green light 12, and blue light 13 are used to realize full-color ⁇ LED micro-display.
  • a full-color ⁇ LED microdisplay device without electrical contact including: a transparent lower substrate 100, a transparent upper substrate 200, a blue ⁇ LED die, and a wavelength down-conversion light-emitting layer 300, control module 800, connecting the upper transparent substrate and the lower transparent substrate, the sealing frame body 500 and the exhaust sealing opening 600, and the color filter film 700; the reflective layer 110 and the lower driving electrode 120 are arranged on the surface of the lower substrate , The diffusion layer 210 and the upper driving electrode 220 disposed on the surface of the transparent upper substrate;
  • the upper driving electrode 210 and the lower driving electrode 110 are arranged on both sides of the blue ⁇ LED die 400, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode 210 and the blue ⁇ LED die 400 300.
  • the wavelength down conversion light-emitting layer 300 is provided between the lower driving electrode 110 and the blue ⁇ LED die 400; between the upper driving electrode 210, the lower driving electrode 110 and the blue ⁇ LED die 400 There is no direct electrical contact, and an independent space is formed; the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, and the control module 600 is the upper driving electrode 210 and the lower driving electrode.
  • the electrode 110 provides an alternating driving signal, and a driving electric field is formed between the upper driving electrode 210 and the lower driving electrode 110.
  • the driving electric field controls the electrons and holes of the ⁇ LED die 400 to recombine and emit the first A light source 111, the first light source is converted into a second light source 112 through the wavelength down-conversion light-emitting layer, and after passing through the reflective layer and the diffusion layer, it becomes red light 11, green light 11, and green light through the color filter film 700.
  • Light 12, blue light 13 to realize full-color ⁇ LED micro-display.
  • the present invention provides a method for manufacturing a full-color ⁇ LED microdisplay device without electrical contact.
  • the specific steps are as follows:
  • Step S1 Provide a transparent upper substrate 200 with an exhaust port 600, and sequentially deposit a diffusion layer 210 and an upper driving electrode 220 on one surface of the transparent upper substrate 200 by physical vapor or chemical vapor deposition, printing or inkjet printing.
  • the diffusion layer 210 mixes the first light source 111 and the second light source 112 into a uniformly luminous third light source 113;
  • the upper driving electrode 220 is a transparent electrode, and the material of the transparent electrode can be but not limited to Graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires and combinations thereof;
  • Step S2 Prepare a color filter film 700 on the surface of the transparent upper substrate 200 by photolithography or screen printing, the color filter film R unit 701, G unit 702, and B unit 703 and the upper driving electrode 220 one-to-one correspondence; the R unit, G unit and B unit are arranged at equal intervals, and the black barriers 704 are directly filled next to each other.
  • Step S3 Coating the frame sealing body 500 around the transparent lower substrate by using screen printing, inkjet printing or knife coating,
  • Step S4 A transparent lower substrate 100 is provided, and the reflective layer 110 and the lower driving electrode 120 are deposited on the surface of the transparent lower substrate 100 by physical vapor or chemical vapor deposition or printing or inkjet printing.
  • the reflective layer reflects the first light source 111, the second light source 112, and the third light source 113 after the first light source 111 and the second light source are mixed, thereby improving device efficiency; the lower driving electrode
  • the materials can be, but are not limited to, gold, silver, aluminum, copper and their alloys or laminated structures.
  • Step S5 Provide a blue ⁇ LED die.
  • the blue ⁇ LED die is formed by a plurality of blue ⁇ LED chips connected in series in a vertical direction, or may be formed by connecting a plurality of blue ⁇ LED chips in parallel in a horizontal direction, or may be formed by arbitrarily stacking a plurality of blue ⁇ LED chips; the blue ⁇ LED chip Including p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials.
  • the p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials are stacked in a vertical direction to form a semiconductor junction; the semiconductor junction may include, but is not limited to, a single semiconductor junction ( pn junction), semiconductor pair junction (pnp, npn junction), multiple semiconductor junctions, and combinations thereof.
  • the thickness of the P-type semiconductor material is 1 nm-2.0 ⁇ m
  • the thickness of the light-emitting structure is 1 nm-1.0 ⁇ m
  • the thickness of the N-type semiconductor material is 1 nm-2.5 ⁇ m.
  • the thickness of the P-type semiconductor material 402 is 0.2 ⁇ m
  • the thickness of the light emitting structure 403 is 0.1 ⁇ m
  • the n-type semiconductor material 401 The thickness is 0.4 ⁇ m.
  • Step S6 Provide a wavelength down-conversion light-emitting layer 300.
  • the wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the light from the first light source emitted by the blue ⁇ LED die, and the second light source is yellow light; the wavelength down-conversion light-emitting layer may be disposed on The surface of the upper driving electrode and the lower driving electrode may also be arranged on the outer surface of the ⁇ LED die, or may be mixed and coated with the ⁇ LED die, and arranged on the upper driving electrode and the upper driving electrode.
  • the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or yellow phosphor material, or a mixed material of yellow quantum dot and yellow phosphor.
  • the yellow phosphor 300 and the blue ⁇ LED chip 400 are uniformly mixed, the ⁇ LED chip and the wavelength down-conversion light-emitting layer are mixed and coated together, and screen printing or inkjet printing or spraying is used.
  • the spin coating method is arranged on the surface of the lower driving electrode 120.
  • Step S7 the upper and lower transparent substrates 100 and 200 are aligned and packaged, and then degassed and sealed off through the exhaust port 600.
  • Step S8 Provide a control module 800.
  • the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, respectively, and the control module 800 provides alternating driving signals for the upper driving electrode 210 and the lower driving electrode 110, and is connected to the upper driving electrode 210 and the lower driving electrode 110.
  • the driving electric field formed between the upper driving electrode 210 and the lower driving electrode 110, the driving electric field controls the electrons and holes of the ⁇ LED die to recombine and emit the first light source 111.
  • the wavelength down-converts the light-emitting layer to convert it into the second light source 112. After the reflective layer and the diffusion layer, the color filter film 700 becomes red light 11, green light 12, and blue light 13 to realize full-color ⁇ LED micro display.
  • the present invention provides a full-color ⁇ LED microdisplay device with no electrical contact.
  • the working principle is as follows: When the control module 800 applies an AC signal, the P-type semiconductor material 402 in the plurality of ⁇ LED chips 400 provides empty space.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a full-color μLED micro-display device without electrical contact, and a method for manufacturing same. The device comprises a reflecting layer and a lower driving electrode arranged on the surface of a transparent lower substrate, a diffusion layer and an upper driving electrode arranged on the surface of a transparent upper substrate, blue light μLED crystal grains and a wavelength down-conversion light-emitting layer arranged between the upper and lower driving electrodes, and a control module and a color filter film, wherein the upper and lower driving electrodes are not in electrical contact with the blue light μLED crystal grains; the control module is electrically connected to the upper and lower driving electrodes; the control module provides an alternating driving signal for controlling the μLED crystal grains to excite a first light source, and the first light source is converted into a second light source by means of the wavelength down-conversion light-emitting layer; and after the first and second light sources pass through the reflecting layer and the diffusion layer, full-color μLED micro-display is then realized by means of the color filter film. The present invention can effectively avoid a complex manufacturing process for a three-primary-color μLED chip in a full-color μLED device, as well as complex bonding and mass transfer processes of a light-emitting chip and a driving chip, thereby shortening a μLED display manufacturing period and reducing manufacturing costs.

Description

一种无电学接触的全彩化μLED微显示器件及其制造方法Full-color μLED micro-display device without electrical contact and manufacturing method thereof 技术领域Technical field
本发明涉及集成半导体显示领域，特别涉及一种无电学接触的全彩化μLED微显示器件及其制造方法。The invention relates to the field of integrated semiconductor displays, in particular to a full-color μLED micro-display device without electrical contact and a manufacturing method thereof.
背景技术Background technique
在平板显示技术领域中，微米级LED显示（简称μLED显示）是指将传统LED微缩化后形成微米级间距LED阵列以达到超高密度像素分辨率。μLED显示具备自发光特性，相比OLED和LCD显示，μLED显示具备低功耗、高亮度、超高清晰度、高色彩饱和度、更快的响应速度、更长的使用寿命和更高的工作效率等；此外，μLED显示是唯一能够具备驱动、发光、及信号传输为一体的高发光效率低功耗器件，并实现超大规模集成发光单元的显示器件，由于高密度、小尺寸、超多像素的特点，μLED显示将成为以高真实度，互动和个性化显示为主要特点的第三代显示技术的引领者。由于综合了LCD和LED两大技术特点，产品性能远高于目前的TFT-LCD和OLED，可广泛地应用于柔性显示、车载显示、透明显示、大面积显示、穿戴显示、AR/VR等领域。但是由于尺寸数量等问题，微米级 LED集成在键合、转移、驱动、色彩化等方面还存在着一系列技术难点。In the field of flat panel display technology, micron LED display (μLED display for short) refers to miniaturizing traditional LEDs to form a micron-pitch LED array to achieve ultra-high-density pixel resolution. μLED display has self-luminous characteristics. Compared with OLED and LCD displays, μLED display has low power consumption, high brightness, ultra-high definition, high color saturation, faster response speed, longer service life and higher work Efficiency, etc.; in addition, the μLED display is the only display device capable of driving, emitting, and signal transmission with high luminous efficiency and low power consumption, and realizing a super-large-scale integrated light-emitting unit, due to high density, small size, and super multi-pixel The characteristics of μLED display will become the leader of the third-generation display technology with high-fidelity, interactive and personalized display as the main features. Due to the integration of the two major technical characteristics of LCD and LED, the product performance is much higher than the current TFT-LCD and OLED, and can be widely used in flexible display, vehicle display, transparent display, large area display, wearable display, AR/VR and other fields . However, due to issues such as size and quantity, there are still a series of technical difficulties in the integration of micron LEDs in bonding, transfer, driving, and colorization.
目前，全彩化μLED显示一般通过金属有机化学气相沉积（MOCVD）在GaN或GaAs基底上进行外延生长，在经多道工艺制备红绿蓝三基色μLED芯片，利用芯片转移和键合工艺经三基色μLED芯片与驱动芯片绑定在电路基板上形成全彩化三基色显示像素，这种技术需要通过精确对准和键合实现μLED芯片中的驱动电极和驱动模块的精准电学接触，需要拥有巨量的μLED晶粒拾取，放置和组装；在彩色化技术方面，还可以通过色彩转换法、光学棱镜合成法以及通过控制LED结构和尺寸发射不同波长光等方法实现。其中蓝光LED+红绿量子点的色彩转换是目前实现全彩色μLED显示的主流技术路线，现有技术工艺中，利用量子点技术实现Micro-LED全彩化显示是常见的一种工艺优化手段，而且目前工艺技术和制备方案也比较多。中国专利CN106356386A、CN108257949A、CN109256455A在蓝色μLED芯片填充红色量子点和绿色量子点单元实现了全彩化显示，但是蓝色μLED芯片需要制作阴极和阳极，量子点也需要图形化，同时μLED芯片经巨量转移后，与驱动电极芯片Bonding，电极接触后才能驱动蓝色μLED芯片发光，从而实现全彩化显示，导致μLED器件制作周期加长，制作成本成本高。At present, full-color μLED displays are generally epitaxially grown on GaN or GaAs substrates by metal organic chemical vapor deposition (MOCVD), and red, green and blue μLED chips are prepared through multiple processes. The primary color μLED chip and the driving chip are bound on the circuit substrate to form full-color three-color display pixels. This technology requires precise alignment and bonding to achieve precise electrical contact between the driving electrodes in the μLED chip and the driving module. A large number of μLED dies are picked up, placed and assembled; in terms of colorization technology, it can also be achieved through methods such as color conversion, optical prism synthesis, and by controlling the structure and size of the LED to emit light of different wavelengths. Among them, the color conversion of blue LED + red and green quantum dots is the mainstream technology route to realize full-color μLED display. In the existing technology, the use of quantum dot technology to achieve full-color Micro-LED display is a common process optimization method, and At present, there are more process technologies and preparation schemes. Chinese patents CN106356386A, CN108257949A, and CN109256455A realize full-color display by filling red quantum dots and green quantum dots in blue μLED chips. However, blue μLED chips need to make cathodes and anodes, and quantum dots need to be patterned. After the massive transfer, the blue μLED chip can only be driven to emit light after the bonding and electrode contact with the driving electrode chip, thereby realizing full-color display, resulting in a longer production cycle of μLED devices and high production costs.
技术问题technical problem
本发明提出一种无电学接触的全彩化μLED微显示，该器件中的上、下驱动电极与μLED晶粒中p型半导体层和n型半导体层没有电学接触，控制模块分别与上驱动电极、下驱动电极电学连接，为上驱动电极、下驱动电极提供交变驱动信号，并在上驱动电极与所述下驱动电极之间形成的驱动电场，在交变驱动电场控制μLED晶粒的电子和空穴复合并发出第一光源，第一光源激发波长下转换发光层第二光源，第一光源和第二光源经所述反射层和所述扩散层后转换成均匀的第三光源，第三光源经彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示。该发明能避免μLED发光器件中的三基色芯片复杂制作工艺、以及发光芯片与驱动芯片复杂键合（bonding）以及μLED芯片巨量转移工艺，有效地降低μLED器件的制作周期和制作成本，有望大大提高全彩化μLED显示的市场竞争力。The present invention provides a full-color μLED microdisplay without electrical contact. The upper and lower driving electrodes in the device do not have electrical contact with the p-type semiconductor layer and the n-type semiconductor layer in the μLED die, and the control module is respectively connected with the upper driving electrode. , The lower drive electrode is electrically connected to provide alternating drive signals for the upper drive electrode and the lower drive electrode, and a drive electric field is formed between the upper drive electrode and the lower drive electrode, and the alternating drive electric field controls the electrons of the μLED die. The first light source is combined with the hole and emits the first light source, the first light source excites the second light source of the wavelength down-conversion light-emitting layer, the first light source and the second light source are converted into a uniform third light source after passing through the reflection layer and the diffusion layer. The three light sources are transformed into red light, green light and blue light through the color filter film to realize a full-color μLED micro-display. The invention can avoid the complicated manufacturing process of the three primary color chips in the μLED light-emitting device, the complicated bonding of the light-emitting chip and the driving chip, and the massive transfer process of the μLED chip, effectively reducing the production cycle and production cost of the μLED device, and it is expected to greatly Improve the market competitiveness of full-color μLED displays.
技术解决方案Technical solutions
本发明的目的在于克服现有技术的不足，提供一种无电学接触无巨量转移的全彩化μLED显示器件，该器件的上驱动电极、下驱动电极和蓝光μLED晶粒之间无直接的电学接触，形成一个独立的空间；控制模块分别与上驱动电极、所述下驱动电极电学连接，为上、下驱动电极提供交变驱动信号，并在上驱动电极与所述下驱动电极之间形成的驱动电场，在驱动电场控制下μLED晶粒的电子和空穴复合并发出第一光源述第一光源经波长下转换发光层而转化为第二光源，第一光源和第二光源经反射层和所述扩散层后混合成均匀的第三光源；第三光源经彩色滤光膜实现全彩化μLED微显示。本发明提供的一种无电学接触无巨量转移的全彩化μLED显示器件，能有效地避免红/绿/蓝三基色μLED芯片的复杂制作工艺，同时也能避免μLED发光芯片和驱动芯片的复杂键合（bonding）工艺和巨量转移工艺，有效地缩短了μLED的制作周期，降低了μLED显示的制作成本，有望大大提高全彩化μLED显示的市场竞争力。The purpose of the present invention is to overcome the shortcomings of the prior art and provide a full-color μLED display device with no electrical contact and no massive transfer. There is no direct contact between the upper driving electrode, the lower driving electrode and the blue μLED die of the device. Electrical contact to form an independent space; the control module is electrically connected to the upper driving electrode and the lower driving electrode to provide an alternating driving signal for the upper and lower driving electrodes, and between the upper driving electrode and the lower driving electrode The formed driving electric field, under the control of the driving electric field, the electrons and holes of the μLED die recombine and emit a first light source. The first light source is converted into a second light source through the wavelength down conversion of the light-emitting layer, and the first light source and the second light source are reflected The layer and the diffusion layer are mixed to form a uniform third light source; the third light source realizes a full-color μLED micro-display through the color filter film. The present invention provides a full-color μLED display device with no electrical contact and no massive transfer, which can effectively avoid the complicated manufacturing process of the red/green/blue three-primary color μLED chip, and at the same time can avoid the problem of the μLED light-emitting chip and the driving chip. The complex bonding process and the massive transfer process effectively shorten the production cycle of μLED and reduce the production cost of μLED display, which is expected to greatly improve the market competitiveness of full-color μLED display.
为实现上述目的，本发明的技术方案是：一种无电学接触的全彩化μLED微显示器件，包括：透明下基板、透明上基板、蓝光μLED晶粒、波长下转换发光层、控制模块、连接所述透明上基板和透明下基板的封框体、设置于透明上基板的排气口、设置于透明上基板的彩色滤光膜、设置于透明下基板表面的反射层、设置于透明上基板表面的扩散层、设置于透明上基板上方的下驱动电极、设置于透明上基板下方的上驱动电极，In order to achieve the above objectives, the technical solution of the present invention is: a full-color μLED microdisplay device without electrical contact, including: a transparent lower substrate, a transparent upper substrate, blue μLED dies, a wavelength down conversion light-emitting layer, a control module, The sealing frame body connecting the transparent upper substrate and the transparent lower substrate, the exhaust port provided on the transparent upper substrate, the color filter film provided on the transparent upper substrate, the reflective layer provided on the surface of the transparent lower substrate, and the air outlet provided on the transparent upper substrate. The diffusion layer on the surface of the substrate, the lower driving electrode arranged above the transparent upper substrate, and the upper driving electrode arranged below the transparent upper substrate,
所述上驱动电极与下驱动电极分别设置于所述蓝光μLED晶粒两侧，所述上驱动电极、下驱动电极与所述蓝光μLED晶粒之间设置所述波长下转换发光层；所述上驱动电极、下驱动电极与所述蓝光μLED晶粒之间无直接的电学接触，形成一个独立的空间；所述控制模块分别与所述上驱动电极、所述下驱动电极电学连接，所述控制模块为所述上、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，所述第一光源经所述反射层后与所述第二光源由所述扩散层后混合成均匀的第三光源；所述第三光源经彩色滤光膜实现全彩化μLED微显示。The upper driving electrode and the lower driving electrode are respectively arranged on both sides of the blue μLED die, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode, the lower driving electrode and the blue μLED die; There is no direct electrical contact between the upper driving electrode, the lower driving electrode and the blue μLED die, forming an independent space; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the The control module provides alternating drive signals for the upper and lower drive electrodes, and a drive electric field is formed between the upper drive electrode and the lower drive electrode, and the drive electric field controls the electrons and air of the μLED die. The hole recombines and emits a first light source, the first light source is converted into a second light source by the wavelength down-conversion light-emitting layer, and the first light source passes through the reflective layer and then interacts with the second light source by the diffusion layer Then, it is mixed into a uniform third light source; the third light source realizes a full-color μLED micro-display through the color filter film.
在本发明一实施例中，所述彩色滤光膜设置于所述透明上基板上表面，并与所述上驱动电极对应；所述彩色滤光膜沿上驱动电极的方向依次构成用于红光显示的R单元，用于绿光显示的G单元以及用于蓝光显示的B单元；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁。In an embodiment of the present invention, the color filter film is disposed on the upper surface of the transparent upper substrate and corresponds to the upper driving electrode; the color filter film is formed in order along the direction of the upper driving electrode for red The R unit for light display, the G unit for green light display and the B unit for blue light display; the R units, G units and B units are arranged at equal intervals, and the black barriers are directly filled next to each other.
在本发明一实施例中，所述蓝光μLED晶粒由若干个蓝光μLED芯片沿垂直方向串联而成，或由若干个蓝光μLED芯片沿水平方向并联而成，或由若干个蓝光μLED芯片任意堆积而成。In an embodiment of the present invention, the blue μLED die is formed by a plurality of blue μLED chips connected in series in a vertical direction, or a plurality of blue μLED chips are connected in parallel in a horizontal direction, or a plurality of blue μLED chips are arbitrarily stacked Become.
在本发明一实施例中，所述蓝光μLED芯片包括p型半导体材料、发光结构及n型半导体材料，所述p型半导体材料、发光结构及n型半导体材料沿垂直方向堆垛形成半导体结。In an embodiment of the present invention, the blue μLED chip includes a p-type semiconductor material, a light-emitting structure, and an n-type semiconductor material, and the p-type semiconductor material, the light-emitting structure, and the n-type semiconductor material are stacked in a vertical direction to form a semiconductor junction.
在本发明一实施例中，所述半导体结包括单一半导体结、半导体对结、多半导体结中的一种或多种的组合；所述 P型半导体材料厚度为1nm-2.0μm，所述发光结构厚度为1nm -1.0μm，所述N型半导体材料厚度为1nm-2.5μm。In an embodiment of the present invention, the semiconductor junction includes one or a combination of a single semiconductor junction, a semiconductor pair junction, and multiple semiconductor junctions; the thickness of the P-type semiconductor material is 1 nm-2.0 μm, and the light emitting The thickness of the structure is 1 nm-1.0 μm, and the thickness of the N-type semiconductor material is 1 nm-2.5 μm.
在本发明一实施例中，所述上驱动电极是由若干个相互平行的线电极构成，且沿所述μLED晶粒的水平方向设置于所述上透明基板表面；所述下驱动电极是由若干个相互平行线电极构成，且沿所述μLED晶粒的垂直方向设置于所述下透明基板表面，且所述上电极和所述下电极相互垂直，两者之间具有的间隔，可形成一个独立空间。In an embodiment of the present invention, the upper driving electrode is composed of a plurality of mutually parallel line electrodes, and is arranged on the surface of the upper transparent substrate along the horizontal direction of the μLED die; the lower driving electrode is composed of A plurality of mutually parallel line electrodes are formed on the surface of the lower transparent substrate along the vertical direction of the μLED die, and the upper electrode and the lower electrode are perpendicular to each other. The space between the two can be formed An independent space.
在本发明一实施例中，所述波长下转换发光层可设置于所述上驱动电极和所述下驱动电极表面，或可设置于所述μLED晶粒的外表面，或可与所述μLED晶粒混合包覆一起，并设置于所述上驱动电极和所述下驱动电极形成的独立空间内；所述波长下转换发光层是黄色量子点材料，或可为黄色荧光粉材料，或可为黄色量子点与黄色荧光粉混合材料；所述波长下转换发光层在所述蓝光μLED晶粒发出第一光源光线照射之下激发波长更长的第二光源，所述第二光源为黄光。In an embodiment of the present invention, the wavelength down-conversion light-emitting layer may be disposed on the surface of the upper driving electrode and the lower driving electrode, or may be disposed on the outer surface of the μLED die, or may be combined with the μLED The crystal grains are mixed and wrapped together, and are arranged in an independent space formed by the upper driving electrode and the lower driving electrode; the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or may be yellow phosphor material, or may be It is a mixed material of yellow quantum dots and yellow phosphors; the wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the irradiation of the first light source light emitted by the blue μLED die, and the second light source is yellow light .
在本发明一实施例中，所述控制模块可提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形为正弦波、三角波、方波、脉冲中的一种或多种的复合波形；所述交变电压的频率为1Hz-1000MHz。In an embodiment of the present invention, the control module can provide an alternating voltage whose amplitude and polarity change with time; the waveform of the alternating voltage is one of sine wave, triangle wave, square wave, and pulse. Or multiple composite waveforms; the frequency of the alternating voltage is 1 Hz-1000 MHz.
本发明还提供了一种基于上述所述的电学接触的全彩化μLED微显示器件的制造方法，按照以下步骤实现：The present invention also provides a method for manufacturing a full-color μLED micro-display device based on the above-mentioned electrical contact, which is implemented according to the following steps:
步骤S1、提供一带排气口的透明上基板，在所述透明上基板的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层和上驱动电极；所述扩散层将所述第一光源和所述第二光源混合后变成均匀发光的第三光源；所述上驱动电极是透明电极，透明电极的材料包括石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
步骤S2、利用光刻或丝网印刷的方法在所述透明上基板表面制备彩色滤光膜，所述彩色滤光膜R单元、G单元和B单元与所述上驱动电极一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁；Step S2: Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence; The R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
步骤S3、提供一透明下基板，在所述透明下基板表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层和下驱动电极；所述反射层将所述第一光源、所述第二光源及第一光源和所述第二光源混合后的所述第三光源反射回，提高器件效率；所述下驱动电极的材料包括金、银、铝、铜及其合金或叠层结构；Step S3, a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof. Layer structure
步骤S4、利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板四周涂覆所述封框体；Step S4, coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing, or knife coating;
步骤S5、提供一波长下转换发光层：利用丝网印刷或喷墨打印或喷涂或旋涂的方法在所述上驱动电极和所述下驱动电极表面涂覆一层波长下转换发光层；Step S5, providing a wavelength down-converting light-emitting layer: coating a wavelength down-converting light-emitting layer on the surface of the upper driving electrode and the lower driving electrode by screen printing or inkjet printing, spraying or spin coating;
步骤S6、提供一蓝色μLED晶粒：利用喷墨打印或刮涂或喷洒的方法在所述波长下转换发光层表面涂覆一层蓝光μLED芯片；Step S6, providing a blue μLED chip: coating a layer of blue μLED chip on the surface of the wavelength conversion light-emitting layer by means of inkjet printing or scraping or spraying;
步骤S7、上下透明基板对准封装，经排气口除气封离；Step S7, the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
步骤S8、提供一控制模块；所述控制模块分别与所述上驱动电极所述下驱动电极电学连接，所述控制模块为所述上驱动电极、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，经所述反射层和所述扩散层后混合成均匀的第三光源，经过彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示。Step S8: Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the μLED die to recombine and emit a first light source, and the first light source is down-converted by the wavelength The light-emitting layer is converted into a second light source, which is mixed into a uniform third light source after the reflective layer and the diffusion layer, and then becomes red, green, and blue light through the color filter film to realize a full-color μLED microdisplay .
本发明还提供了一种基于上述所述的电学接触的全彩化μLED微显示器件的制造方法，按照以下步骤实现：The present invention also provides a method for manufacturing a full-color μLED micro-display device based on the above-mentioned electrical contact, which is implemented according to the following steps:
步骤S1、提供一带排气口的透明上基板，在所述透明上基板的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层和上驱动电极；所述扩散层将所述第一光源和所述第二光源混合后变成均匀发光的第三光源；所述上驱动电极是透明电极，透明电极的材料包括石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
步骤S2、利用光刻或丝网印刷的方法在所述透明上基板表面制备彩色滤光膜，所述彩色滤光膜R单元、G单元和B单元与所述上驱动电极一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁；Step S2: Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence; The R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
步骤S3、利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板四周涂覆所述封框体；Step S3: Coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing or knife coating;
步骤S4、提供一透明下基板，在所述透明下基板表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层和下驱动电极；所述反射层将所述第一光源、所述第二光源及第一光源和所述第二光源混合后的所述第三光源反射回，提高器件效率；所述下驱动电极的材料包括金、银、铝、铜及其合金或叠层结构；Step S4, a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof. Layer structure
步骤S5、提供一蓝色μLED晶粒；Step S5: Provide a blue μLED die;
步骤S6、提供一波长下转换发光层：将所述波长下转换发光层和所述蓝光μLED芯片均匀混合，所述μLED晶粒与所述波长下转换发光层混合包覆一起，利用丝网印刷或喷墨打印或喷涂或旋涂的方法设置于所述下驱动电极表面；Step S6. Provide a wavelength down-conversion light-emitting layer: uniformly mix the wavelength down-conversion light-emitting layer and the blue μLED chip, and the μLED die and the wavelength down-conversion light-emitting layer are mixed and wrapped together, using screen printing Or the method of inkjet printing, spraying or spin coating is arranged on the surface of the lower driving electrode;
步骤S7、上下透明基板对准封装，经排气口除气封离；Step S7, the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
步骤S8、提供一控制模块；所述控制模块分别与所述上驱动电极、所述下驱动电极电学连接，所述控制模块为所述上驱动电极、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，经所述反射层和所述扩散层后，经过彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示。Step S8. Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the μLED die to recombine and emit a first light source. The light-emitting layer is converted into a second light source, and after the reflection layer and the diffusion layer, the color filter film is changed into red light, green light, and blue light to realize a full-color μLED micro-display.
有益效果Beneficial effect
相较于现有技术，本发明具有以下有益效果：Compared with the prior art, the present invention has the following beneficial effects:
（一）本发明提出的全彩化μLED微显示器件中的上、下驱动电极与μLED晶粒中p型半导体层和n型半导体层没有电学接触，能有效地避免μLED芯片复杂的制作工艺，以及μLED发光芯片和驱动芯片的复杂键合（bonding）和转移工艺，缩短了μLED的制作周期，降低了μLED显示的制作成本；(1) The upper and lower driving electrodes in the full-color μLED microdisplay device proposed by the present invention have no electrical contact with the p-type semiconductor layer and the n-type semiconductor layer in the μLED die, which can effectively avoid the complicated manufacturing process of the μLED chip. As well as the complex bonding and transfer process of the μLED light-emitting chip and the driving chip, the production cycle of the μLED is shortened, and the production cost of the μLED display is reduced;
（二）本发明提供的控制模块分别与上驱动电极、下驱动电极电学连接，为上驱动电极、下驱动电极提供交变驱动信号，并在上驱动电极与所述下驱动电极之间形成的驱动电场，在该驱动方式下，可通过调制驱动电压和工作频率能有效地调控无电学接触μLED器件的发光亮度；(2) The control module provided by the present invention is electrically connected to the upper driving electrode and the lower driving electrode, and provides alternating driving signals for the upper driving electrode and the lower driving electrode, and is formed between the upper driving electrode and the lower driving electrode. Drive electric field, in this drive mode, the luminous brightness of the non-electrically contacted μLED device can be effectively controlled by modulating the drive voltage and operating frequency;
（三）本发明提出的交变驱动电场控制μLED晶粒的电子和空穴复合并发出第一光源，第一光源激发波长下转换发光层第二光源，第一光源和第二光源经所述反射层和所述扩散层后转换成均匀的第三光源，第三光源经彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示，有效地提高无电学接触的全彩化μLED微显示的制造工艺和制作成本，对全彩化μLED显示开发和应用上具有重要的意义。(3) The alternating drive electric field proposed in the present invention controls the electrons and holes of the μLED die to recombine and emit the first light source, the first light source excites the second light source of the wavelength down-conversion light-emitting layer, and the first light source and the second light source pass through the After the reflective layer and the diffusion layer are converted into a uniform third light source, the third light source is transformed into red, green, and blue light through the color filter film to realize a full-color μLED micro-display, which effectively improves the full range of non-electric contact The manufacturing process and production cost of colorized μLED microdisplays are of great significance to the development and application of full-colorized μLED displays.
附图说明Description of the drawings
图1为本发明图1为本发明第一实施例的一种无电学接触的全彩化μLED微显示的结构示意图。Fig. 1 is a schematic diagram of the structure of a full-color μLED micro-display without electrical contact according to the first embodiment of the present invention.
图2为本发明第一实施例的任意放置μLED芯片的结构示意图。FIG. 2 is a schematic diagram of the structure of arbitrarily placing μLED chips according to the first embodiment of the present invention.
图3为本发明第一实施例的一种无电学接触的全彩化μLED微显示的制造流程图。3 is a manufacturing flow chart of a full-color μLED microdisplay without electrical contact according to the first embodiment of the present invention.
图4为本发明第一实施例的一种无电学接触的全彩化μLED微显示的工作原理图。Fig. 4 is a working principle diagram of a full-color μLED micro-display without electrical contact according to the first embodiment of the present invention.
图5为本发明第二实施例的一种无电学接触的全彩化μLED微显示的结构示意图。FIG. 5 is a schematic structural diagram of a full-color μLED micro-display without electrical contact according to the second embodiment of the present invention.
图6为本发明第二实施例的任意放置μLED芯片的结构示意图。FIG. 6 is a schematic diagram of the structure of arbitrarily placing μLED chips according to the second embodiment of the present invention.
图7为本发明第二实施例的一种无电学接触的全彩化μLED微显示的制造流程图。FIG. 7 is a manufacturing flow chart of a full-color μLED micro-display without electrical contact according to the second embodiment of the present invention.
图8为本发明第二实施例的一种无电学接触的全彩化μLED微显示的工作原理图。FIG. 8 is a working principle diagram of a full-color μLED micro-display without electrical contact according to the second embodiment of the present invention.
图中：100为透明下基板，200为透明上基板，110为反射层，210为扩散层，120为下驱动电极，220为上驱动电极，300为波长下转换发光层，400为μLED芯片，401为n型半导体材料，402为p型半导体材料，403为发光结构，500为封框体，600为排气口，700为彩色滤光膜，701为R单元，702为G单元，703为B单元，704为黑色障壁层，800为控制模块，111为第一光源，112为第二光源，113为第三光源，11为红光，12为绿光，13为蓝光。In the figure: 100 is a transparent lower substrate, 200 is a transparent upper substrate, 110 is a reflective layer, 210 is a diffusion layer, 120 is a lower driving electrode, 220 is an upper driving electrode, 300 is a wavelength down-conversion light-emitting layer, 400 is a μLED chip, 401 is an n-type semiconductor material, 402 is a p-type semiconductor material, 403 is a light-emitting structure, 500 is a frame body, 600 is an exhaust port, 700 is a color filter film, 701 is an R unit, 702 is a G unit, and 703 is a In unit B, 704 is a black barrier layer, 800 is a control module, 111 is a first light source, 112 is a second light source, 113 is a third light source, 11 is red light, 12 is green light, and 13 is blue light.
本发明的实施方式Embodiments of the present invention
为使本发明的目的、技术方案及优点更加清楚明白，以下将通过具体实施例和相关附图，对本发明作进一步详细说明。在图中，为了清楚，放大了层与区域的厚度，但作为示意图不应该被认为严格反映了几何尺寸的比例关系。在此，参考图是本发明的理想化实施例示意图，本发明的实施例不应该被认为仅限于图中所示的区域的特定形状，而是包括所得到的形状，比如制造引起的偏差。在本实施例中均以矩形或圆表示，图中的表示是示意性的，但这不应该被认为限制本发明的范围。本实施例中障壁起伏图案的大小与起伏周期有一定范围，在实际生产中可以根据实际需要设计起伏图案大小及其起伏周期，实施例中起伏周期的数值只是示意值，但这不应该被认为限制本发明的范围。需要注意的是，这里所使用的术语仅是为了描述具体实施方式，而非意图限制根据本申请的示例性实施方式。如在这里所使用的，除非上下文另外明确指出，否则单数形式也意图包括复数形式，此外，还应当理解的是，当在本说明书中使用术语“包含”和/或“包括”时，其指明存在特征、步骤、操作、器件、组件和/或它们的组合。In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following will further describe the present invention in detail through specific embodiments and related drawings. In the figure, for the sake of clarity, the thickness of the layers and regions are enlarged, but as a schematic diagram, it should not be considered as strictly reflecting the proportional relationship of geometric dimensions. Here, the reference figure is a schematic diagram of an idealized embodiment of the present invention. The embodiment of the present invention should not be considered as limited to the specific shape of the area shown in the figure, but includes the resulting shape, such as deviations caused by manufacturing. In this embodiment, they are all represented by rectangles or circles, and the representation in the figures is schematic, but this should not be considered as limiting the scope of the present invention. In this embodiment, the size of the barrier rib undulating pattern and the undulating period have a certain range. In actual production, the size of the undulating pattern and its undulating period can be designed according to actual needs. The value of the undulating period in the embodiment is only an exemplary value, but this should not be considered Limit the scope of the present invention. It should be noted that the terms used here are only for describing specific embodiments, and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should also be understood that when the terms "comprising" and/or "including" are used in this specification, they indicate There are features, steps, operations, devices, components, and/or combinations thereof.
本发明提供了一种无电学接触的全彩化μLED微显示器件，包括：透明下基板，透明上基板，蓝光μLED晶粒，波长下转换发光层，控制模块，连接所述透明上基板和透明下基板的封框体，设置于透明上基板的排气口，以及彩色滤光膜；设置于下基板表面的反射层、下驱动电极，设置于透明上基板表面的扩散层、上驱动电极；The present invention provides a full-color μLED microdisplay device without electrical contact, comprising: a transparent lower substrate, a transparent upper substrate, a blue μLED die, a wavelength down-conversion light-emitting layer, a control module, which connects the transparent upper substrate and the transparent The frame sealing body of the lower substrate is arranged on the exhaust port of the transparent upper substrate and the color filter film; the reflective layer and the lower driving electrode are arranged on the surface of the lower substrate, the diffusion layer and the upper driving electrode are arranged on the surface of the transparent upper substrate;
所述上驱动电极与所述下驱动电极设置于所述蓝光μLED晶粒两侧，所述上驱动电极与所述蓝光μLED晶粒之间设置有所述波长下转换发光层，所述下驱动电极与所述蓝光μLED晶粒之间设置有所述波长下转换发光层；所述上驱动电极、下驱动电极和所述蓝光μLED晶粒之间无直接的电学接触，形成一个独立的空间；所述控制模块分别与所述上驱动电极、所述下驱动电极电学连接，所述控制模块为所述上、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，所述第一光源和所述第二光源经所述反射层和所述扩散层后混合成均匀的第三光源；所述第三光源经彩色滤光膜实现全彩化μLED微显示。The upper driving electrode and the lower driving electrode are arranged on both sides of the blue μLED die, the wavelength down-converting light-emitting layer is arranged between the upper driving electrode and the blue μLED die, and the lower driving The wavelength down conversion light-emitting layer is arranged between the electrode and the blue μLED die; there is no direct electrical contact between the upper driving electrode, the lower driving electrode and the blue μLED die, forming an independent space; The control module is electrically connected to the upper drive electrode and the lower drive electrode, and the control module provides alternating drive signals for the upper and lower drive electrodes, and drives the upper drive electrode and the lower drive electrode. The driving electric field formed between the electrodes, the driving electric field controls the electrons and holes of the μLED die to recombine and emit a first light source, and the first light source is converted into a second light source through the wavelength down-conversion light-emitting layer, The first light source and the second light source are mixed to form a uniform third light source after passing through the reflective layer and the diffusion layer; the third light source realizes a full-color μLED micro-display through a color filter film.
如图1所示，本发明第一实施例中提供一种无电学接触的全彩化μLED微显示器件，包括：透明下基板100，透明上基板200，蓝光μLED晶粒，波长下转换发光层300，控制模块800，连接所述上透明基板和下透明基板的封框体500和排气封离口600，以及彩色滤光膜700；设置于下基板表面的反射层110、下驱动电极120，设置于透明上基板表面的扩散层210、上驱动电极220；其特征还在于，As shown in FIG. 1, the first embodiment of the present invention provides a full-color μLED microdisplay device without electrical contact, including: a transparent lower substrate 100, a transparent upper substrate 200, a blue μLED die, and a wavelength down-conversion light-emitting layer 300, control module 800, connecting the upper transparent substrate and the lower transparent substrate, the sealing frame body 500 and the exhaust sealing opening 600, and the color filter film 700; the reflective layer 110 and the lower driving electrode 120 are arranged on the surface of the lower substrate , The diffusion layer 210 and the upper driving electrode 220 disposed on the surface of the transparent upper substrate; it is also characterized by:
所述上驱动电极210与所述下驱动电极110设置于所述蓝光μLED晶粒400两侧，所述上驱动电极210与所述蓝光μLED晶粒400之间设置有所述波长下转换发光层300，所述下驱动电极110与所述蓝光μLED晶粒400之间设置有所述波长下转换发光层300；所述上驱动电极210、下驱动电极110和所述蓝光μLED晶粒400之间无直接的电学接触，形成一个独立的空间；所述控制模块800分别与所述上驱动电极210、所述下驱动电极110电学连接，所述控制模块600为所述上驱动电极210、下驱动电极110提供交变驱动信号，并在所述上驱动电极210与所述下驱动电极110之间形成的驱动电场，所述驱动电场控制所述μLED晶粒400的电子和空穴复合并发出第一光源111，所述第一光源111经所述波长下转换发光层激发为第二光源112，所述第一光源111与所述第二光源112混合成第三光源113，所述第三光源113经所述反射层和所述扩散层后，经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。The upper driving electrode 210 and the lower driving electrode 110 are arranged on both sides of the blue μLED die 400, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode 210 and the blue μLED die 400 300. The wavelength down conversion light-emitting layer 300 is provided between the lower driving electrode 110 and the blue μLED die 400; between the upper driving electrode 210, the lower driving electrode 110 and the blue μLED die 400 There is no direct electrical contact, and an independent space is formed; the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, and the control module 600 is the upper driving electrode 210 and the lower driving electrode. The electrode 110 provides an alternating driving signal, and a driving electric field is formed between the upper driving electrode 210 and the lower driving electrode 110. The driving electric field controls the electrons and holes of the μLED die 400 to recombine and emit the first A light source 111, the first light source 111 is excited by the wavelength down-conversion light-emitting layer to become a second light source 112, the first light source 111 and the second light source 112 are mixed to form a third light source 113, and the third light source After passing through the reflective layer and the diffusion layer, 113 is transformed into red light 11, green light 12, and blue light 13 through the color filter film 700 to realize a full-color μLED micro-display.
参考如图2和图3所示，本发明提供一种无电学接触的全彩化μLED微显示器件的制造方法，具体步骤如下：With reference to Figures 2 and 3, the present invention provides a method for manufacturing a full-color μLED microdisplay device without electrical contact. The specific steps are as follows:
步骤S1：提供一带排气口600的透明上基板200，在所述透明上基板200的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层210和上驱动电极220；所述扩散层210将所述第一光源111和所述第二光源112混合后变成均匀发光的第三光源113；所述上驱动电极220是透明电极，透明电极的材料可以但不限于石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate 200 with an exhaust port 600, and sequentially deposit a diffusion layer 210 and an upper driving electrode 220 on one surface of the transparent upper substrate 200 by physical vapor or chemical vapor deposition, printing or inkjet printing. The diffusion layer 210 mixes the first light source 111 and the second light source 112 into a uniformly luminous third light source 113; the upper driving electrode 220 is a transparent electrode, and the material of the transparent electrode can be but not limited to Graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires and combinations thereof;
步骤S2：利用光刻或丝网印刷的方法在所述透明上基板200表面制备彩色滤光膜700，所述彩色滤光膜R单元701、G单元702和B单元703与所述上驱动电极220一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁704。Step S2: Prepare a color filter film 700 on the surface of the transparent upper substrate 200 by photolithography or screen printing, the color filter film R unit 701, G unit 702, and B unit 703 and the upper driving electrode 220 one-to-one correspondence; the R unit, G unit and B unit are arranged at equal intervals, and the black barriers 704 are directly filled next to each other.
步骤S3：提供一透明下基板100，在所述透明下基板100表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层110和下驱动电极120。所述反射层将所述第一光源111、所述第二光源112及第一光源111和所述第二光源混合后的所述第三光源113反射回，提高器件效率；所述下驱动电极的材料可以但不限于金、银、铝、铜及其合金或叠层结构。Step S3: A transparent lower substrate 100 is provided, and the reflective layer 110 and the lower driving electrode 120 are deposited on the surface of the transparent lower substrate 100 by physical vapor or chemical vapor deposition, printing or inkjet printing. The reflective layer reflects the first light source 111, the second light source 112, and the third light source 113 after the first light source 111 and the second light source are mixed, thereby improving device efficiency; the lower driving electrode The materials can be, but are not limited to, gold, silver, aluminum, copper and their alloys or laminated structures.
步骤S4：利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板200四周涂覆所述封框体500，Step S4: coating the frame sealing body 500 around the transparent lower substrate 200 by using screen printing, inkjet printing or knife coating,
步骤S5：提供一波长下转换发光层300。所述波长下转换发光层在所述蓝光μLED晶粒发出第一光源光线照射之下激发波长更长的第二光源，所述第二光源为黄光；所述波长下转换发光层可设置于所述上驱动电极和所述下驱动电极表面，也可设置于所述μLED晶粒的外表面，也可与所述μLED晶粒混合包覆一起，并设置于所述上驱动电极和所述下驱动电极形成的独立空间内；所述波长下转换发光层是黄色量子点材料，也可为黄色荧光粉材料，还可为黄色量子点与黄色荧光粉混合材料。本实施例优选将利用印刷工艺将所述黄色荧光粉400涂覆在所述下驱动电极120和所述上驱动电极220表面。Step S5: Provide a wavelength down-conversion light-emitting layer 300. The wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the light from the first light source emitted by the blue μLED die, and the second light source is yellow light; the wavelength down-conversion light-emitting layer may be disposed on The surface of the upper driving electrode and the lower driving electrode may also be arranged on the outer surface of the μLED die, or may be mixed and coated with the μLED die, and arranged on the upper driving electrode and the upper driving electrode. In the independent space formed by the lower driving electrode; the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or yellow phosphor material, or a mixed material of yellow quantum dot and yellow phosphor. In this embodiment, the yellow phosphor 400 is preferably coated on the surfaces of the lower driving electrode 120 and the upper driving electrode 220 by a printing process.
步骤S6：提供一蓝色μLED晶粒。所述蓝光μLED晶粒由若干个蓝光μLED芯片沿垂直方向串联而成，也可由若干个蓝光μLED芯片沿水平方向并联而成，还可由若干个蓝光μLED芯片任意堆积而成；所述蓝光μLED芯片包括p型半导体材料、发光结构及n型半导体材料（所述p型半导体材料、发光结构及n型半导体材料可采用有机材料、无机材料或高分子材料），所述p型半导体材料、发光结构及n型半导体材料沿垂直方向堆垛形成半导体结；所述半导体结可以包括但不限于单一半导体结（pn结）、半导体对结（pnp、npn结）、多个半导体结，及其组合而成。所述 P型半导体材料厚度为1nm-2.0μm，所述发光结构厚度为1nm -1.0μm，所述N型半导体材料厚度为1nm-2.5μm。本实施例优选将若干个蓝光μLED芯片400任意堆积而成μLED晶粒，所述P型半导体材料402的厚度为0.2μm，所述发光结构403的厚度为0.1μm，所述n型半导体材料401的厚度为0.4μm，如图3所示。Step S6: Provide a blue μLED die. The blue μLED die is formed by a plurality of blue μLED chips connected in series in a vertical direction, or may be formed by connecting a plurality of blue μLED chips in parallel in a horizontal direction, or may be formed by arbitrarily stacking a plurality of blue μLED chips; the blue μLED chip Including p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials (the p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials can use organic materials, inorganic materials, or polymer materials), the p-type semiconductor materials, light-emitting structures And n-type semiconductor materials are stacked in a vertical direction to form a semiconductor junction; the semiconductor junction may include, but is not limited to, a single semiconductor junction (pn junction), a semiconductor pair junction (pnp, npn junction), multiple semiconductor junctions, and combinations thereof. to make. The thickness of the P-type semiconductor material is 1 nm-2.0 μm, the thickness of the light-emitting structure is 1 nm-1.0 μm, and the thickness of the N-type semiconductor material is 1 nm-2.5 μm. In this embodiment, it is preferable that a plurality of blue μLED chips 400 are arbitrarily stacked to form a μLED die, the thickness of the P-type semiconductor material 402 is 0.2 μm, the thickness of the light emitting structure 403 is 0.1 μm, and the n-type semiconductor material 401 The thickness is 0.4μm, as shown in Figure 3.
步骤S7：上下透明基板100、200对准封装，经排气口600除气封离。Step S7: the upper and lower transparent substrates 100 and 200 are aligned and packaged, and then degassed and sealed off through the exhaust port 600.
步骤S8：提供一控制模块800。所述控制模块800分别与所述上驱动电极210、所述下驱动电极110电学连接，所述控制模块800为所述上驱动电极210、下驱动电极110提供交变驱动信号，并在所述上驱动电极210与所述下驱动电极110之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源111，所述第一光源经111所述波长下转换发光层而转化为第二光源112，经所述反射层和所述扩散层后混合成均匀的第三光源113，经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。Step S8: Provide a control module 800. The control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, respectively, and the control module 800 provides alternating driving signals for the upper driving electrode 210 and the lower driving electrode 110, and is connected to the upper driving electrode 210 and the lower driving electrode 110. The driving electric field formed between the upper driving electrode 210 and the lower driving electrode 110, the driving electric field controls the electrons and holes of the μLED die to recombine and emit the first light source 111. The wavelength down-converts the light-emitting layer to convert it into a second light source 112, which is mixed into a uniform third light source 113 through the reflective layer and the diffusion layer, and becomes red light 11, green light 12, and blue light through the color filter film 700 13 and realize full-color μLED micro-display.
参考图4，本发明提供一种无电学接触的全彩化μLED微显示器件的工作原理如下：当所述控制模块800施加一个交流信号，若干个μLED400中的P型半导体材料402提供空穴扩散到发光结构403，n型半导体材料401提供电子扩散到发光结构403，电子与空穴在发光结构403中复合发出第一光源111；第一光源111激发上驱动电极220和下驱动电极110表面的黄色量子点发光层300发出第二光源112，第一光源111和第二光源112经反射层110和扩散层210后混合成均匀的第三光源113；第三光源113经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。4, the present invention provides a full-color μLED microdisplay device without electrical contact. The working principle is as follows: When the control module 800 applies an AC signal, the P-type semiconductor materials 402 in the plurality of μLEDs 400 provide hole diffusion To the light emitting structure 403, the n-type semiconductor material 401 provides electrons to diffuse into the light emitting structure 403. The electrons and holes recombine in the light emitting structure 403 to emit the first light source 111; the first light source 111 excites the surface of the upper driving electrode 220 and the lower driving electrode 110. The yellow quantum dot light-emitting layer 300 emits a second light source 112. The first light source 111 and the second light source 112 are mixed into a uniform third light source 113 after the reflective layer 110 and the diffusion layer 210; the third light source 113 is transformed by the color filter film 700 Red light 11, green light 12, and blue light 13 are used to realize full-color μLED micro-display.
如图5所示，本发明第二实施例中提供一种无电学接触的全彩化μLED微显示器件，包括：透明下基板100，透明上基板200，蓝光μLED晶粒，波长下转换发光层300，控制模块800，连接所述上透明基板和下透明基板的封框体500和排气封离口600，以及彩色滤光膜700；设置于下基板表面的反射层110、下驱动电极120，设置于透明上基板表面的扩散层210、上驱动电极220；As shown in FIG. 5, in the second embodiment of the present invention, a full-color μLED microdisplay device without electrical contact is provided, including: a transparent lower substrate 100, a transparent upper substrate 200, a blue μLED die, and a wavelength down-conversion light-emitting layer 300, control module 800, connecting the upper transparent substrate and the lower transparent substrate, the sealing frame body 500 and the exhaust sealing opening 600, and the color filter film 700; the reflective layer 110 and the lower driving electrode 120 are arranged on the surface of the lower substrate , The diffusion layer 210 and the upper driving electrode 220 disposed on the surface of the transparent upper substrate;
所述上驱动电极210与所述下驱动电极110设置于所述蓝光μLED晶粒400两侧，所述上驱动电极210与所述蓝光μLED晶粒400之间设置有所述波长下转换发光层300，所述下驱动电极110与所述蓝光μLED晶粒400之间设置有所述波长下转换发光层300；所述上驱动电极210、下驱动电极110和所述蓝光μLED晶粒400之间无直接的电学接触，形成一个独立的空间；所述控制模块800分别与所述上驱动电极210、所述下驱动电极110电学连接，所述控制模块600为所述上驱动电极210、下驱动电极110提供交变驱动信号，并在所述上驱动电极210与所述下驱动电极110之间形成的驱动电场，所述驱动电场控制所述μLED晶粒400的电子和空穴复合并发出第一光源111，所述第一光源经所述波长下转换发光层而转化为第二光源112，经所述反射层和所述扩散层后，经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。The upper driving electrode 210 and the lower driving electrode 110 are arranged on both sides of the blue μLED die 400, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode 210 and the blue μLED die 400 300. The wavelength down conversion light-emitting layer 300 is provided between the lower driving electrode 110 and the blue μLED die 400; between the upper driving electrode 210, the lower driving electrode 110 and the blue μLED die 400 There is no direct electrical contact, and an independent space is formed; the control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, and the control module 600 is the upper driving electrode 210 and the lower driving electrode. The electrode 110 provides an alternating driving signal, and a driving electric field is formed between the upper driving electrode 210 and the lower driving electrode 110. The driving electric field controls the electrons and holes of the μLED die 400 to recombine and emit the first A light source 111, the first light source is converted into a second light source 112 through the wavelength down-conversion light-emitting layer, and after passing through the reflective layer and the diffusion layer, it becomes red light 11, green light 11, and green light through the color filter film 700. Light 12, blue light 13 to realize full-color μLED micro-display.
参考如图6和图7所示，本发明提供一种无电学接触的全彩化μLED微显示器件的制造方法，具体步骤如下：With reference to Figures 6 and 7, the present invention provides a method for manufacturing a full-color μLED microdisplay device without electrical contact. The specific steps are as follows:
步骤S1：提供一带排气口600的透明上基板200，在所述透明上基板200的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层210和上驱动电极220；所述扩散层210将所述第一光源111和所述第二光源112混合后变成均匀发光的第三光源113；所述上驱动电极220是透明电极，透明电极的材料可以但不限于石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate 200 with an exhaust port 600, and sequentially deposit a diffusion layer 210 and an upper driving electrode 220 on one surface of the transparent upper substrate 200 by physical vapor or chemical vapor deposition, printing or inkjet printing. The diffusion layer 210 mixes the first light source 111 and the second light source 112 into a uniformly luminous third light source 113; the upper driving electrode 220 is a transparent electrode, and the material of the transparent electrode can be but not limited to Graphene, indium tin oxide, carbon nanotubes, silver nanowires, copper nanowires and combinations thereof;
步骤S2：利用光刻或丝网印刷的方法在所述透明上基板200表面制备彩色滤光膜700，所述彩色滤光膜R单元701、G单元702和B单元703与所述上驱动电极220一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁704。Step S2: Prepare a color filter film 700 on the surface of the transparent upper substrate 200 by photolithography or screen printing, the color filter film R unit 701, G unit 702, and B unit 703 and the upper driving electrode 220 one-to-one correspondence; the R unit, G unit and B unit are arranged at equal intervals, and the black barriers 704 are directly filled next to each other.
步骤S3：利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板四周涂覆所述封框体500，Step S3: Coating the frame sealing body 500 around the transparent lower substrate by using screen printing, inkjet printing or knife coating,
步骤S4：提供一透明下基板100，在所述透明下基板100表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层110和下驱动电极120。所述反射层将所述第一光源111、所述第二光源112及第一光源111和所述第二光源混合后的所述第三光源113反射回，提高器件效率；所述下驱动电极的材料可以但不限于金、银、铝、铜及其合金或叠层结构。Step S4: A transparent lower substrate 100 is provided, and the reflective layer 110 and the lower driving electrode 120 are deposited on the surface of the transparent lower substrate 100 by physical vapor or chemical vapor deposition or printing or inkjet printing. The reflective layer reflects the first light source 111, the second light source 112, and the third light source 113 after the first light source 111 and the second light source are mixed, thereby improving device efficiency; the lower driving electrode The materials can be, but are not limited to, gold, silver, aluminum, copper and their alloys or laminated structures.
步骤S5：提供一蓝色μLED晶粒。所述蓝光μLED晶粒由若干个蓝光μLED芯片沿垂直方向串联而成，也可由若干个蓝光μLED芯片沿水平方向并联而成，还可由若干个蓝光μLED芯片任意堆积而成；所述蓝光μLED芯片包括p型半导体材料、发光结构及n型半导体材料，所述p型半导体材料、发光结构及n型半导体材料沿垂直方向堆垛形成半导体结；所述半导体结可以包括但不限于单一半导体结（pn结）、半导体对结（pnp、npn结）、多个半导体结，及其组合而成。所述 P型半导体材料厚度为1nm-2.0μm，所述发光结构厚度为1nm -1.0μm，所述N型半导体材料厚度为1nm-2.5μm。本实施例优选将若干个蓝光μLED芯片400任意堆积而成μLED晶粒，所述P型半导体材料402的厚度为0.2μm，所述发光结构403的厚度为0.1μm，所述n型半导体材料401的厚度为0.4μm。Step S5: Provide a blue μLED die. The blue μLED die is formed by a plurality of blue μLED chips connected in series in a vertical direction, or may be formed by connecting a plurality of blue μLED chips in parallel in a horizontal direction, or may be formed by arbitrarily stacking a plurality of blue μLED chips; the blue μLED chip Including p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials. The p-type semiconductor materials, light-emitting structures, and n-type semiconductor materials are stacked in a vertical direction to form a semiconductor junction; the semiconductor junction may include, but is not limited to, a single semiconductor junction ( pn junction), semiconductor pair junction (pnp, npn junction), multiple semiconductor junctions, and combinations thereof. The thickness of the P-type semiconductor material is 1 nm-2.0 μm, the thickness of the light-emitting structure is 1 nm-1.0 μm, and the thickness of the N-type semiconductor material is 1 nm-2.5 μm. In this embodiment, it is preferable that a plurality of blue μLED chips 400 are arbitrarily stacked to form a μLED die, the thickness of the P-type semiconductor material 402 is 0.2 μm, the thickness of the light emitting structure 403 is 0.1 μm, and the n-type semiconductor material 401 The thickness is 0.4μm.
步骤S6：提供一波长下转换发光层300。所述波长下转换发光层在所述蓝光μLED晶粒发出第一光源光线照射之下激发波长更长的第二光源，所述第二光源为黄光；所述波长下转换发光层可设置于所述上驱动电极和所述下驱动电极表面，也可设置于所述μLED晶粒的外表面，也可与所述μLED晶粒混合包覆一起，并设置于所述上驱动电极和所述下驱动电极形成的独立空间内；所述波长下转换发光层是黄色量子点材料，也可为黄色荧光粉材料，还可为黄色量子点与黄色荧光粉混合材料。本实施例优选将所述黄色荧光粉300和所述蓝光μLED芯片400均匀混合，将所述μLED芯片与所述波长下转换发光层混合包覆一起，利用丝网印刷或喷墨打印或喷涂或旋涂的方法设置于所述下驱动电极120表面。Step S6: Provide a wavelength down-conversion light-emitting layer 300. The wavelength down-conversion light-emitting layer excites a second light source with a longer wavelength under the light from the first light source emitted by the blue μLED die, and the second light source is yellow light; the wavelength down-conversion light-emitting layer may be disposed on The surface of the upper driving electrode and the lower driving electrode may also be arranged on the outer surface of the μLED die, or may be mixed and coated with the μLED die, and arranged on the upper driving electrode and the upper driving electrode. In the independent space formed by the lower driving electrode; the wavelength down-conversion light-emitting layer is made of yellow quantum dot material, or yellow phosphor material, or a mixed material of yellow quantum dot and yellow phosphor. In this embodiment, preferably, the yellow phosphor 300 and the blue μLED chip 400 are uniformly mixed, the μLED chip and the wavelength down-conversion light-emitting layer are mixed and coated together, and screen printing or inkjet printing or spraying is used. The spin coating method is arranged on the surface of the lower driving electrode 120.
步骤S7：上下透明基板100、200对准封装，经排气口600除气封离。Step S7: the upper and lower transparent substrates 100 and 200 are aligned and packaged, and then degassed and sealed off through the exhaust port 600.
步骤S8：提供一控制模块800。所述控制模块800分别与所述上驱动电极210、所述下驱动电极110电学连接，所述控制模块800为所述上驱动电极210、下驱动电极110提供交变驱动信号，并在所述上驱动电极210与所述下驱动电极110之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源111，所述第一光源经111所述波长下转换发光层而转化为第二光源112，经所述反射层和所述扩散层后，经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。Step S8: Provide a control module 800. The control module 800 is electrically connected to the upper driving electrode 210 and the lower driving electrode 110, respectively, and the control module 800 provides alternating driving signals for the upper driving electrode 210 and the lower driving electrode 110, and is connected to the upper driving electrode 210 and the lower driving electrode 110. The driving electric field formed between the upper driving electrode 210 and the lower driving electrode 110, the driving electric field controls the electrons and holes of the μLED die to recombine and emit the first light source 111. The wavelength down-converts the light-emitting layer to convert it into the second light source 112. After the reflective layer and the diffusion layer, the color filter film 700 becomes red light 11, green light 12, and blue light 13 to realize full-color μLED micro display.
参考图8，本发明提供一种无电学接触的全彩化μLED微显示器件的工作原理如下：当所述控制模块800施加一个交流信号，若干个μLED芯片400中的P型半导体材料402提供空穴扩散到发光结构403，n型半导体材料401提供电子扩散到发光结构403，电子与空穴在发光结构403中复合发出第一光源111；第一光源111激发μLED芯片400表面的黄色荧光粉发光层300发出第二光源112，第一光源111和第二光源112经反射层110和扩散层210后混合成均匀的第三光源113；第三光源113经过彩色滤光膜700变成红光11、绿光12、蓝光13而实现全彩化μLED微显示。Referring to FIG. 8, the present invention provides a full-color μLED microdisplay device with no electrical contact. The working principle is as follows: When the control module 800 applies an AC signal, the P-type semiconductor material 402 in the plurality of μLED chips 400 provides empty space. The holes diffuse to the light emitting structure 403, the n-type semiconductor material 401 provides electrons to diffuse to the light emitting structure 403, and the electrons and holes recombine in the light emitting structure 403 to emit the first light source 111; the first light source 111 excites the yellow phosphor on the surface of the μLED chip 400 to emit light The layer 300 emits a second light source 112, the first light source 111 and the second light source 112 are mixed into a uniform third light source 113 after the reflective layer 110 and the diffusion layer 210; the third light source 113 is transformed into red light 11 through the color filter film 700 , Green 12, Blue 13 to realize full-color μLED micro-display.
以上是本发明的较佳实施例，凡依本发明技术方案所作的改变，所产生的功能作用未超出本发明技术方案的范围时，均属于本发明的保护范围。The above are the preferred embodiments of the present invention. Any changes made according to the technical solution of the present invention and the resulting function does not exceed the scope of the technical solution of the present invention belong to the protection scope of the present invention.

Claims (10)

  1. 一种无电学接触的全彩化μLED微显示器件，包括：透明下基板、透明上基板、蓝光μLED晶粒、波长下转换发光层、控制模块、连接所述透明上基板和透明下基板的封框体、设置于透明上基板的排气口、设置于透明上基板的彩色滤光膜、设置于透明下基板表面的反射层、设置于透明上基板表面的扩散层、设置于透明上基板上方的下驱动电极、设置于透明上基板下方的上驱动电极，其特征在于，A full-color μLED microdisplay device with no electrical contact, comprising: a transparent lower substrate, a transparent upper substrate, a blue μLED die, a wavelength down conversion light-emitting layer, a control module, and a seal connecting the transparent upper substrate and the transparent lower substrate The frame, the exhaust port provided on the transparent upper substrate, the color filter film provided on the transparent upper substrate, the reflective layer provided on the surface of the transparent lower substrate, the diffusion layer provided on the surface of the transparent upper substrate, and the color filter film provided on the transparent upper substrate The lower driving electrode and the upper driving electrode disposed under the transparent upper substrate are characterized in that:
    所述上驱动电极与下驱动电极分别设置于所述蓝光μLED晶粒两侧，所述上驱动电极、下驱动电极与所述蓝光μLED晶粒之间设置所述波长下转换发光层；所述上驱动电极、下驱动电极与所述蓝光μLED晶粒之间无直接的电学接触，形成一个独立的空间；所述控制模块分别与所述上驱动电极、所述下驱动电极电学连接，所述控制模块为所述上、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，所述第一光源经所述反射层后与所述第二光源由所述扩散层后混合成均匀的第三光源；所述第三光源经彩色滤光膜实现全彩化μLED微显示。The upper driving electrode and the lower driving electrode are respectively arranged on both sides of the blue μLED die, and the wavelength down conversion light-emitting layer is arranged between the upper driving electrode, the lower driving electrode and the blue μLED die; There is no direct electrical contact between the upper driving electrode, the lower driving electrode and the blue μLED die, forming an independent space; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the The control module provides alternating drive signals for the upper and lower drive electrodes, and a drive electric field is formed between the upper drive electrode and the lower drive electrode, and the drive electric field controls the electrons and air of the μLED die. The hole recombines and emits a first light source, the first light source is converted into a second light source by the wavelength down-conversion light-emitting layer, and the first light source passes through the reflective layer and then interacts with the second light source by the diffusion layer Then, it is mixed into a uniform third light source; the third light source realizes a full-color μLED micro-display through the color filter film.
  2. 根据权利要求1所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述彩色滤光膜设置于所述透明上基板上表面，并与所述上驱动电极对应；所述彩色滤光膜沿上驱动电极的方向依次构成用于红光显示的R单元，用于绿光显示的G单元以及用于蓝光显示的B单元；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁。The full-color μLED microdisplay device without electrical contact according to claim 1, wherein the color filter film is disposed on the upper surface of the transparent upper substrate and corresponds to the upper driving electrode; The color filter film sequentially constitutes an R unit for red light display, a G unit for green light display, and a B unit for blue light display along the direction of the upper driving electrode; the R unit, G unit and B unit Arrange at equal intervals, and directly fill the black barriers next to each other.
  3. 根据权利要求1所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述蓝光μLED晶粒由若干个蓝光μLED芯片沿垂直方向串联而成，或由若干个蓝光μLED芯片沿水平方向并联而成，或由若干个蓝光μLED芯片任意堆积而成。The full-color μLED microdisplay device without electrical contact according to claim 1, wherein the blue μLED die is formed by a plurality of blue μLED chips connected in series in a vertical direction, or is composed of a plurality of blue μLED chips. The chips are connected in parallel in the horizontal direction, or are arbitrarily piled up by a number of blue μLED chips.
  4. 根据权利要求3所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述蓝光μLED芯片包括p型半导体材料、发光结构及n型半导体材料，所述p型半导体材料、发光结构及n型半导体材料沿垂直方向堆垛形成半导体结。The full-color μLED microdisplay device without electrical contact according to claim 3, wherein the blue μLED chip comprises a p-type semiconductor material, a light-emitting structure, and an n-type semiconductor material, and the p-type semiconductor material , The light-emitting structure and n-type semiconductor materials are stacked in a vertical direction to form a semiconductor junction.
  5. 根据权利要求4所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述半导体结包括单一半导体结、半导体对结、多半导体结中的一种或多种的组合；所述 P型半导体材料厚度为1nm-2.0μm，所述发光结构厚度为1nm -1.0μm，所述N型半导体材料厚度为1nm-2.5μm。The full-color μLED microdisplay device without electrical contact according to claim 4, wherein the semiconductor junction comprises one or a combination of a single semiconductor junction, a semiconductor pair junction, and a multi-semiconductor junction The thickness of the P-type semiconductor material is 1 nm-2.0 μm, the thickness of the light-emitting structure is 1 nm-1.0 μm, and the thickness of the N-type semiconductor material is 1 nm-2.5 μm.
  6. 根据权利要求1所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述上驱动电极是由若干个相互平行的线电极构成，且沿所述μLED晶粒的水平方向设置于所述上透明基板表面；所述下驱动电极是由若干个相互平行线电极构成，且沿所述μLED晶粒的垂直方向设置于所述下透明基板表面，且所述上电极和所述下电极相互垂直，两者之间具有的间隔，可形成一个独立空间。The full-color μLED microdisplay device without electrical contact according to claim 1, wherein the upper driving electrode is composed of a plurality of mutually parallel line electrodes, and is arranged along the level of the μLED crystal grain. The direction is set on the surface of the upper transparent substrate; the lower driving electrode is composed of a number of mutually parallel line electrodes, and is arranged on the surface of the lower transparent substrate along the vertical direction of the μLED die, and the upper electrode and The lower electrodes are perpendicular to each other, and the space between the two can form an independent space.
  7. 根据权利要求1所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述波长下转换发光层可设置于所述上驱动电极和所述下驱动电极表面，或可设置于所述μLED晶粒的外表面，或可与所述μLED晶粒混合包覆一起，并设置于所述上驱动电极和所述下驱动电极形成的独立空间内；所述波长下转换发光层是黄色量子点材料，或可为黄色荧光粉材料，或可为黄色量子点与黄色荧光粉混合材料；所述波长下转换发光层在所述蓝光μLED晶粒发出第一光源光线照射之下激发波长更长的第二光源，所述第二光源为黄光。The full-color μLED microdisplay device without electrical contact according to claim 1, wherein the wavelength down-conversion light-emitting layer can be disposed on the surface of the upper driving electrode and the lower driving electrode, or can be It is arranged on the outer surface of the μLED die, or can be mixed and coated with the μLED die, and arranged in an independent space formed by the upper driving electrode and the lower driving electrode; the wavelength down-conversion luminescence The layer is a yellow quantum dot material, or can be a yellow phosphor material, or can be a mixture of yellow quantum dots and yellow phosphor; the wavelength down-conversion light-emitting layer is irradiated by the first light source light emitted by the blue μLED die Excite a second light source with a longer wavelength, and the second light source is yellow light.
  8. 根据权利要求1所述的一种无电学接触的全彩化μLED微显示器件，其特征在于，所述控制模块可提供一种幅值和极性随时间变化的交变电压；所述交变电压的波形为正弦波、三角波、方波、脉冲中的一种或多种的复合波形；所述交变电压的频率为1Hz-1000MHz。The full-color μLED microdisplay device without electrical contact according to claim 1, wherein the control module can provide an alternating voltage whose amplitude and polarity change over time; The waveform of the voltage is a composite waveform of one or more of a sine wave, a triangle wave, a square wave, and a pulse; the frequency of the alternating voltage is 1 Hz-1000 MHz.
  9. 一种基于权利要求1-8任一所述的电学接触的全彩化μLED微显示器件的制造方法，其特征在于，按照以下步骤实现：A method for manufacturing a full-color μLED micro-display device based on the electrical contact of any one of claims 1-8, characterized in that it is implemented according to the following steps:
    步骤S1、提供一带排气口的透明上基板，在所述透明上基板的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层和上驱动电极；所述扩散层将所述第一光源和所述第二光源混合后变成均匀发光的第三光源；所述上驱动电极是透明电极，透明电极的材料包括石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
    步骤S2、利用光刻或丝网印刷的方法在所述透明上基板表面制备彩色滤光膜，所述彩色滤光膜R单元、G单元和B单元与所述上驱动电极一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁；Step S2: Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence; The R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
    步骤S3、提供一透明下基板，在所述透明下基板表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层和下驱动电极；所述反射层将所述第一光源、所述第二光源及第一光源和所述第二光源混合后的所述第三光源反射回，提高器件效率；所述下驱动电极的材料包括金、银、铝、铜及其合金或叠层结构；Step S3, a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof. Layer structure
    步骤S4、利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板四周涂覆所述封框体；Step S4, coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing, or knife coating;
    步骤S5、提供一波长下转换发光层：利用丝网印刷或喷墨打印或喷涂或旋涂的方法在所述上驱动电极和所述下驱动电极表面涂覆一层波长下转换发光层；Step S5, providing a wavelength down-converting light-emitting layer: coating a wavelength down-converting light-emitting layer on the surface of the upper driving electrode and the lower driving electrode by screen printing or inkjet printing, spraying or spin coating;
    步骤S6、提供一蓝色μLED晶粒：利用喷墨打印或刮涂或喷洒的方法在所述波长下转换发光层表面涂覆一层蓝光μLED芯片；Step S6, providing a blue μLED chip: coating a layer of blue μLED chip on the surface of the wavelength conversion light-emitting layer by means of inkjet printing or scraping or spraying;
    步骤S7、上下透明基板对准封装，经排气口除气封离；Step S7, the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
    步骤S8、提供一控制模块；所述控制模块分别与所述上驱动电极所述下驱动电极电学连接，所述控制模块为所述上驱动电极、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，经所述反射层和所述扩散层后混合成均匀的第三光源，经过彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示。Step S8: Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the μLED die to recombine and emit a first light source, and the first light source is down-converted by the wavelength The light-emitting layer is converted into a second light source, which is mixed into a uniform third light source after the reflective layer and the diffusion layer, and then becomes red, green, and blue light through the color filter film to realize a full-color μLED microdisplay .
  10. 一种基于权利要求1-8任一所述的电学接触的全彩化μLED微显示器件的制造方法，其特征在于，按照以下步骤实现：A method for manufacturing a full-color μLED micro-display device based on the electrical contact of any one of claims 1-8, characterized in that it is implemented according to the following steps:
    步骤S1、提供一带排气口的透明上基板，在所述透明上基板的一个表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法依次沉积扩散层和上驱动电极；所述扩散层将所述第一光源和所述第二光源混合后变成均匀发光的第三光源；所述上驱动电极是透明电极，透明电极的材料包括石墨烯、氧化铟锡、碳纳米管、银纳米线、铜纳米线及其组合；Step S1: Provide a transparent upper substrate with an exhaust port, and deposit a diffusion layer and an upper driving electrode on one surface of the transparent upper substrate sequentially by physical vapor or chemical vapor deposition, printing or inkjet printing; the diffusion layer The first light source and the second light source are mixed to become a uniformly luminous third light source; the upper driving electrode is a transparent electrode, and the material of the transparent electrode includes graphene, indium tin oxide, carbon nanotube, silver nano Wires, copper nanowires and their combinations;
    步骤S2、利用光刻或丝网印刷的方法在所述透明上基板表面制备彩色滤光膜，所述彩色滤光膜R单元、G单元和B单元与所述上驱动电极一一对应；所述R 单元，G单元和B单元等间距排列，相邻直接填充黑色障壁；Step S2: Prepare a color filter film on the surface of the transparent upper substrate by photolithography or screen printing, and the R unit, G unit and B unit of the color filter film correspond to the upper driving electrode in a one-to-one correspondence; The R unit, the G unit and the B unit are arranged at equal intervals, and the black barriers are directly filled next to each other;
    步骤S3、利用丝网印刷或喷墨打印或刮涂的方法在所述透明下基板四周涂覆所述封框体；Step S3: Coating the frame sealing body around the transparent lower substrate by using a method of screen printing, inkjet printing or knife coating;
    步骤S4、提供一透明下基板，在所述透明下基板表面利用物理气相或化学气相沉积或印刷或喷墨打印的方法沉积反射层和下驱动电极；所述反射层将所述第一光源、所述第二光源及第一光源和所述第二光源混合后的所述第三光源反射回，提高器件效率；所述下驱动电极的材料包括金、银、铝、铜及其合金或叠层结构；Step S4, a transparent lower substrate is provided, and a reflective layer and a lower driving electrode are deposited on the surface of the transparent lower substrate by physical vapor or chemical vapor deposition or printing or inkjet printing; the reflective layer connects the first light source, The second light source and the third light source mixed with the first light source and the second light source are reflected back to improve device efficiency; the material of the lower driving electrode includes gold, silver, aluminum, copper, and alloys or stacks thereof. Layer structure
    步骤S5、提供一蓝色μLED晶粒；Step S5: Provide a blue μLED die;
    步骤S6、提供一波长下转换发光层：将所述波长下转换发光层和所述蓝光μLED芯片均匀混合，所述μLED晶粒与所述波长下转换发光层混合包覆一起，利用丝网印刷或喷墨打印或喷涂或旋涂的方法设置于所述下驱动电极表面；Step S6. Provide a wavelength down-conversion light-emitting layer: uniformly mix the wavelength down-conversion light-emitting layer and the blue μLED chip, and the μLED die and the wavelength down-conversion light-emitting layer are mixed and wrapped together, using screen printing Or the method of inkjet printing, spraying or spin coating is arranged on the surface of the lower driving electrode;
    步骤S7、上下透明基板对准封装，经排气口除气封离；Step S7, the upper and lower transparent substrates are aligned with the package, and the package is degassed and sealed off through the exhaust port;
    步骤S8、提供一控制模块；所述控制模块分别与所述上驱动电极、所述下驱动电极电学连接，所述控制模块为所述上驱动电极、下驱动电极提供交变驱动信号，并在所述上驱动电极与所述下驱动电极之间形成的驱动电场，所述驱动电场控制所述μLED晶粒的电子和空穴复合并发出第一光源，所述第一光源经所述波长下转换发光层而转化为第二光源，经所述反射层和所述扩散层后，经过彩色滤光膜变成红光、绿光、蓝光而实现全彩化μLED微显示。Step S8. Provide a control module; the control module is electrically connected to the upper driving electrode and the lower driving electrode, and the control module provides alternating driving signals for the upper driving electrode and the lower driving electrode, and The driving electric field formed between the upper driving electrode and the lower driving electrode, the driving electric field controls the electrons and holes of the μLED die to recombine and emit a first light source. The light-emitting layer is converted into a second light source, and after the reflection layer and the diffusion layer, the color filter film is changed into red light, green light, and blue light to realize a full-color μLED micro-display.
PCT/CN2020/112394 2019-10-16 2020-08-31 FULL-COLOR μLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME WO2021073282A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US17/768,472 US20230352642A1 (en) 2019-10-16 2020-08-31 A FULL-COLOR uLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT AND A MANUFACTURING METHOD THEREFOR
EP20877783.9A EP4044237A4 (en) 2019-10-16 2020-08-31 FULL-COLOR µLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910982320.4A CN110676282B (en) 2019-10-16 2019-10-16 Full-color mu LED micro-display device without electrical contact and manufacturing method thereof
CN201910982320.4 2019-10-16

Publications (1)

Publication Number Publication Date
WO2021073282A1 true WO2021073282A1 (en) 2021-04-22

Family

ID=69082595

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/112394 WO2021073282A1 (en) 2019-10-16 2020-08-31 FULL-COLOR μLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME

Country Status (4)

Country Link
US (1) US20230352642A1 (en)
EP (1) EP4044237A4 (en)
CN (1) CN110676282B (en)
WO (1) WO2021073282A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110676282B (en) * 2019-10-16 2022-07-05 福州大学 Full-color mu LED micro-display device without electrical contact and manufacturing method thereof
CN111785706B (en) * 2020-06-24 2022-11-18 上海洞舟实业有限公司 Flexible LED plane light-emitting device
CN112002792B (en) * 2020-07-06 2022-02-22 深圳市隆利科技股份有限公司 Method for preparing LED display by electrophoretic assembly
CN111899687A (en) * 2020-08-28 2020-11-06 厦门理工学院 Display assembly and display
CN112670379A (en) * 2020-12-24 2021-04-16 广东省科学院半导体研究所 Micro LED structure and color display device
TWI770813B (en) * 2021-02-08 2022-07-11 友達光電股份有限公司 Display apparatus and manufacturing method thereof
WO2023070434A1 (en) * 2021-10-28 2023-05-04 华为技术有限公司 Electrode assembly and manufacturing method therefor, and display apparatus
CN117316067A (en) * 2023-11-14 2023-12-29 深圳御光新材料有限公司 LED light emitting module with integrated board-mounted bracket, transparent screen and manufacturing method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070222372A1 (en) * 2006-03-23 2007-09-27 Eastman Kodak Company OLED device having improved light output
CN102841716A (en) * 2012-08-21 2012-12-26 北京京东方光电科技有限公司 Capacitance-type embedded touch screen and display device
CN104216555A (en) * 2013-05-31 2014-12-17 三星显示有限公司 Display device and method for driving the same
CN105304684A (en) * 2015-11-18 2016-02-03 深圳市华星光电技术有限公司 Color display device and manufacturing method thereof
CN106356386A (en) 2016-09-30 2017-01-25 福州大学 Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device
CN106647023A (en) * 2016-12-09 2017-05-10 深圳市华星光电技术有限公司 Quantum dot liquid crystal display device and manufacturing method thereof
CN108257949A (en) 2018-01-24 2018-07-06 福州大学 Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved
CN109256455A (en) 2018-09-19 2019-01-22 福州大学 A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method
CN109786418A (en) * 2018-12-26 2019-05-21 惠科股份有限公司 Micro light-emitting diode display panel and display device
CN110676282A (en) * 2019-10-16 2020-01-10 福州大学 Full-color mu LED micro-display device without electrical contact and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011097252A2 (en) * 2010-02-02 2011-08-11 Pixtronix, Inc. Methods for manufacturing cold seal fluid-filled display apparatus
KR20130040997A (en) * 2013-03-13 2013-04-24 주식회사 나노브릭 Method and apparatus for controlling transmittance and reflectance by usnig particles
CN204407349U (en) * 2015-03-05 2015-06-17 安徽三安光电有限公司 A kind of gallium nitride based light emitting diode
EP3790361B1 (en) * 2015-07-23 2022-10-19 Seoul Semiconductor Co., Ltd. Display apparatus
CN109256456B (en) * 2018-09-19 2020-04-10 福州大学 Microstructure for realizing light efficiency improvement and crosstalk reduction of Micro-LED and manufacturing method thereof
CN110112147A (en) * 2019-05-20 2019-08-09 威创集团股份有限公司 A kind of LED display module and preparation method thereof

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070222372A1 (en) * 2006-03-23 2007-09-27 Eastman Kodak Company OLED device having improved light output
CN102841716A (en) * 2012-08-21 2012-12-26 北京京东方光电科技有限公司 Capacitance-type embedded touch screen and display device
CN104216555A (en) * 2013-05-31 2014-12-17 三星显示有限公司 Display device and method for driving the same
CN105304684A (en) * 2015-11-18 2016-02-03 深圳市华星光电技术有限公司 Color display device and manufacturing method thereof
CN106356386A (en) 2016-09-30 2017-01-25 福州大学 Micro-LED (Micro-light emitting diode) array backlight source-based ink-jet printing quantum dot display device
CN106647023A (en) * 2016-12-09 2017-05-10 深圳市华星光电技术有限公司 Quantum dot liquid crystal display device and manufacturing method thereof
CN108257949A (en) 2018-01-24 2018-07-06 福州大学 Light efficiency extraction and color conversion micron order LED display and manufacturing method can be achieved
CN109256455A (en) 2018-09-19 2019-01-22 福州大学 A kind of light efficiency extraction and the true color Micro-LED without pixel interference show structure and its manufacturing method
CN109786418A (en) * 2018-12-26 2019-05-21 惠科股份有限公司 Micro light-emitting diode display panel and display device
CN110676282A (en) * 2019-10-16 2020-01-10 福州大学 Full-color mu LED micro-display device without electrical contact and manufacturing method thereof

Also Published As

Publication number Publication date
CN110676282B (en) 2022-07-05
EP4044237A1 (en) 2022-08-17
CN110676282A (en) 2020-01-10
US20230352642A1 (en) 2023-11-02
EP4044237A4 (en) 2022-12-21

Similar Documents

Publication Publication Date Title
WO2021073282A1 (en) FULL-COLOR μLED MICRO-DISPLAY DEVICE WITHOUT ELECTRICAL CONTACT, AND METHOD FOR MANUFACTURING SAME
US20230059135A1 (en) Display device related to micro-led and manufacturing method therefor
US20220320057A1 (en) Display device using micro led and method for manufacturing same
WO2021073285A1 (en) Full-color μled display device eliminating electrical contact and mass transfer
KR20190097946A (en) Fabricating method of display apparatus using semiconductor light emitting device
CN110676284B (en) Non-electrical contact mu LED light-emitting and display device without external carrier injection
US20220367774A1 (en) Display device using micro led, and manufacturing method therefor
Ma et al. Progress in Color Conversion Technology for Micro‐LED
CN110556459B (en) Color mu LED light-emitting display device
US12040435B2 (en) Light-emitting device and image display apparatus with reflection film on side surface and layers having different refractive indices
WO2021189632A1 (en) Display panel and display apparatus
WO2021073283A1 (en) WAVELENGTH DOWN-CONVERSION-BASED μLED LIGHT-EMITTING DEVICE WITHOUT ELECTRICAL CONTACT
CN108899332A (en) Micro-L ED display panel and manufacturing method thereof
CN112909038A (en) Ultra-high resolution micro LED display screen
WO2021203460A1 (en) Display module and display device
WO2024140157A1 (en) Integrated micro-led display device and display panel comprising same
KR20200026677A (en) Display device using micro led
US10276756B2 (en) LED display panel
US20200203563A1 (en) Led display device, method for manufacturing the same, and led display panel
WO2022095129A1 (en) Micro light-emitting diode and display panel
CN110690329B (en) Single-ended electrical contact and single-ended carrier injection mu LED light emitting and display device and preparation method thereof
CN209880658U (en) Micro-LED chip and display device
TWM588865U (en) Display panel structure with magnetic light-emitting element
Wei et al. P‐123: Hybrid Full Color Micro‐LED Displays with Quantum Dots
CN113409721B (en) Electric field driving modulation device for light-emitting device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20877783

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2020877783

Country of ref document: EP

Effective date: 20220513