WO2023120322A1 - 分解洗浄組成物及びその製造方法 - Google Patents

分解洗浄組成物及びその製造方法 Download PDF

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Publication number
WO2023120322A1
WO2023120322A1 PCT/JP2022/046034 JP2022046034W WO2023120322A1 WO 2023120322 A1 WO2023120322 A1 WO 2023120322A1 JP 2022046034 W JP2022046034 W JP 2022046034W WO 2023120322 A1 WO2023120322 A1 WO 2023120322A1
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WO
WIPO (PCT)
Prior art keywords
cleaning composition
group
compound
mass
ether
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/046034
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English (en)
French (fr)
Japanese (ja)
Inventor
晋 中崎
宏太朗 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Resonac Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Resonac Corp filed Critical Resonac Corp
Priority to KR1020247005102A priority Critical patent/KR20240036038A/ko
Priority to JP2023569346A priority patent/JPWO2023120322A1/ja
Publication of WO2023120322A1 publication Critical patent/WO2023120322A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
    • C09J183/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
    • C11D1/38—Cationic compounds
    • C11D1/62—Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C11D7/5013—Organic solvents containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5036—Azeotropic mixtures containing halogenated solvents
    • C11D7/5068—Mixtures of halogenated and non-halogenated solvents
    • C11D7/5077—Mixtures of only oxygen-containing solvents
    • C11D7/5086—Mixtures of only oxygen-containing solvents the oxygen-containing solvents being different from alcohols, e.g. mixtures of water and ethers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W30/00—Technologies for solid waste management
    • Y02W30/50—Reuse, recycling or recovery technologies
    • Y02W30/62—Plastics recycling; Rubber recycling

Definitions

  • the present disclosure relates to a disassembly cleaning composition and a method for producing the same.
  • the present disclosure decomposes and cleans the adhesive containing the adhesive polymer used for temporary bonding between the device wafer and the support wafer (carrier wafer), which remains on the device wafer in the thinning process of the semiconductor wafer. and compositions that can be used for
  • An object of the present disclosure is to provide a decomposing cleaning composition with a high etching rate and a method for producing the same.
  • the disassembly cleaning composition of the present disclosure can achieve a high etching rate.
  • 1 is a graph plotting the etch rate (ER) of decomposing cleaning compositions of Examples 1-40 and Comparative Examples 1-20 against UV absorbance at a wavelength of 262 nm.
  • 1 is a graph plotting the etch rate (ER) of the dissolving cleaning compositions of Examples 41-47 and Comparative Examples 21-27 against UV absorbance at a wavelength of 262 nm.
  • peroxides and hydroxides which are intermediate products of the oxidation reaction of N-substituted amide compounds, are fluoride ions provided by quaternary alkylammonium fluorides. (F ⁇ ) and converts fluoride ions to bifluoride ions (HF 2 ⁇ ). Bifluoride ions have lower reaction activity for breaking Si—O bonds, for example, than fluoride ions. Therefore, it is considered that a decomposing cleaning composition having a large UV absorbance derived from an oxidized derivative produced by oxidation exhibits a lower etching rate.
  • the content of the quaternary alkylammonium fluoride contained in the decomposition cleaning composition is 0.01 to 10% by mass with respect to the total mass (that is, 100% by mass) of the decomposition cleaning composition.
  • the "quaternary alkylammonium fluoride content" refers to the quaternary It is a value converted as the mass of only the alkylammonium fluoride.
  • the content of the quaternary alkylammonium fluoride contained in the decomposition cleaning composition is more preferably 0.01 to 5% by mass, more preferably 0.05 to 2% by mass, relative to the total mass of the decomposition cleaning composition. %, and particularly preferably 0.1 to 1% by mass.
  • the content of the quaternary alkylammonium fluoride contained in the decomposition cleaning composition is preferably 0.5 to 9% by mass with respect to the total mass of the decomposition cleaning composition. It is more preferably 8% by mass, and even more preferably 2 to 5% by mass.
  • Aprotic solvents include (A) N-substituted amide compounds in which a hydrogen atom is not directly attached to the nitrogen atom and (B) ether compounds.
  • the total content of the aprotic solvent contained in the disassembly cleaning composition is 70 to 99.99% by weight with respect to the total weight (i.e., 100% by weight) of the disassembly cleaning composition. is preferred, more preferably 80 to 99.95% by mass, even more preferably 90 to 99.9% by mass.
  • N-substituted Amide Compound with No Hydrogen Atom Directly Bonded to Nitrogen (A)
  • "N-substituted amide compound” also includes urea compounds (ie, carbamide compounds) in which a hydrogen atom is not directly bonded to the nitrogen atom.
  • As the N-substituted amide compound various compounds can be used without particular limitation.
  • Acyclic N-substituted amides such as diethylacetamide, N,N-dimethylpropionamide, N,N-diethylpropionamide and tetramethylurea, as well as 2-pyrrolidone derivatives, 2-piperidone derivatives, ⁇ -caprolactam derivatives, 1, 3-dimethyl-2-imidazolidinone, 1-methyl-3-ethyl-2-imidazolidinone, 1,3-diethyl-2-imidazolidinone and 1,3-dimethyl-3,4,5,6- Cyclic N-substituted amides such as tetrahydro-2(1H)-pyrimidinone (N,N'-dimethylpropyleneurea).
  • (A) N-substituted amide compounds may be one or a combination of two or more.
  • the total content of (A) the N-substituted amide compound and (B) the ether compound contained in the decomposition cleaning composition is It is preferably 70 to 99.99% by mass, more preferably 80 to 99.95% by mass, even more preferably 90 to 99.9% by mass.
  • dialkyl ethers of glycols represented by formula (2) include ethylene glycol dimethyl ether, propylene glycol dimethyl ether, diethylene glycol dimethyl ether, dipropylene glycol dimethyl ether, tripropylene glycol dimethyl ether, tripropylene glycol diethyl ether, and tripropylene glycol di-n-butyl ether. , tetraethylene glycol dimethyl ether and tetrapropylene glycol dimethyl ether.
  • the content of the dialkyl ether of the glycol represented by formula (2) is 1 when the total content of (A) the N-substituted amide compound and (B) the ether compound is 100% by mass.
  • the content is preferably up to 60% by mass, more preferably 3 to 50% by mass, and even more preferably 5 to 40% by mass.
  • the decomposing cleaning composition may contain additives such as antioxidants, surfactants, preservatives, and antifoaming agents as optional components within a range that does not significantly impair the effects of the present invention.
  • the dissolution cleaning composition is preferably substantially free or free of antioxidants.
  • the content of the antioxidant contained in the disassembly cleaning composition may be 1% by mass or less, 0.5% by mass or less, or 0.1% by mass or less with respect to the total mass of the decomposition cleaning composition.
  • Antioxidants can reduce the activity of fluoride ions.
  • Step 2 is an analysis step in which the composition obtained in the mixing step is placed in a quartz cell with an optical path length of 10 mm and spectroscopically analyzed.
  • the analysis step may be performed in an air atmosphere or an inert gas atmosphere, but is preferably performed in an inert gas atmosphere.
  • a dissolving cleaning composition can be selected that is capable of
  • the adhesive polymer is preferably an addition-curable silicone elastomer, silicone gel, or silicone resin.
  • These addition-curable silicones contain ethylenically unsaturated group-containing polyorganosiloxanes (e.g., vinyl-terminated polydimethylsiloxanes or vinyl-terminated MQ resins) and polyorganohydrogensiloxanes (e.g., polymethylhydrogensiloxane) as crosslinkers. and cured with a hydrosilylation catalyst such as a platinum catalyst.
  • Example 22-40 A disassembly cleaning composition was prepared in the same manner as in Example 21 except that the composition was changed as shown in Table 1, and the composition was sealed with nitrogen gas for the predetermined days shown in Table 1 (i.e., 25 days and 17 days). , 15 days, 13 days, 12 days and 9 days) were stored at room temperature to obtain the dissolving cleaning compositions of Examples 22-40. Spectroscopic analysis and cleaning test described below were performed using the disassembly cleaning compositions of Examples 22 to 40 thus obtained.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Detergent Compositions (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
PCT/JP2022/046034 2021-12-24 2022-12-14 分解洗浄組成物及びその製造方法 Ceased WO2023120322A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020247005102A KR20240036038A (ko) 2021-12-24 2022-12-14 분해 세정 조성물 및 그 제조 방법
JP2023569346A JPWO2023120322A1 (https=) 2021-12-24 2022-12-14

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021211337 2021-12-24
JP2021-211337 2021-12-24

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WO2023120322A1 true WO2023120322A1 (ja) 2023-06-29

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PCT/JP2022/046034 Ceased WO2023120322A1 (ja) 2021-12-24 2022-12-14 分解洗浄組成物及びその製造方法

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JP (1) JPWO2023120322A1 (https=)
KR (1) KR20240036038A (https=)
TW (1) TWI869744B (https=)
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021106460A1 (ja) * 2019-11-25 2021-06-03 昭和電工株式会社 分解洗浄組成物の製造方法
WO2021205885A1 (ja) * 2020-04-09 2021-10-14 昭和電工株式会社 組成物、及び接着性ポリマーの洗浄方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12221595B2 (en) * 2019-01-15 2025-02-11 Resonac Corporation Decomposing/cleaning composition, method for cleaning adhesive polymer, and method for producing device wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021106460A1 (ja) * 2019-11-25 2021-06-03 昭和電工株式会社 分解洗浄組成物の製造方法
WO2021205885A1 (ja) * 2020-04-09 2021-10-14 昭和電工株式会社 組成物、及び接着性ポリマーの洗浄方法

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TW202344682A (zh) 2023-11-16
KR20240036038A (ko) 2024-03-19
JPWO2023120322A1 (https=) 2023-06-29
TWI869744B (zh) 2025-01-11

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