WO2023116264A1 - 一种高对比度显示屏led器件及其制造方法 - Google Patents

一种高对比度显示屏led器件及其制造方法 Download PDF

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Publication number
WO2023116264A1
WO2023116264A1 PCT/CN2022/131994 CN2022131994W WO2023116264A1 WO 2023116264 A1 WO2023116264 A1 WO 2023116264A1 CN 2022131994 W CN2022131994 W CN 2022131994W WO 2023116264 A1 WO2023116264 A1 WO 2023116264A1
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Prior art keywords
lens
led chip
display screen
led device
contrast display
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Ceased
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English (en)
French (fr)
Inventor
李宗涛
丁鑫锐
李家声
邵常焜
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South China University of Technology SCUT
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South China University of Technology SCUT
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Priority to US18/723,738 priority Critical patent/US20250113677A1/en
Publication of WO2023116264A1 publication Critical patent/WO2023116264A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0363—Manufacture or treatment of packages of optical field-shaping means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/80—Constructional details
    • H10H29/85—Packages
    • H10H29/855—Optical field-shaping means, e.g. lenses
    • H10H29/8552—Light absorbing arrangements, e.g. black matrix

Definitions

  • the invention relates to the technical field of LEDs, in particular to a high-contrast display screen LED device and a manufacturing method thereof.
  • LED display screens have been widely used in society, but the display screens on the market generally have low contrast.
  • the main reason for this problem is that the LED chips on the display screen reflect more external light sources.
  • many products are currently blackened, and black materials such as toner black paint are added to reduce the reflection of external light sources.
  • blackening in order to improve the contrast is likely to cause the light emitted by the LED itself to be absorbed, resulting in low device efficiency, which is a current technical contradiction.
  • the object of the present invention is to provide a high-contrast display screen LED device and a manufacturing method thereof.
  • a high-contrast display LED device comprising:
  • the housing includes a bottom and a side wall, and the bottom and the side wall form an open cell cavity;
  • LED chips arranged in the unit cavity
  • a lens arranged on the encapsulation layer, the position of the lens matches the position of the LED chip
  • an opaque light-shielding layer covering the encapsulation layer and partially covering the lens
  • the light emitted by the LED chip is converged by the lens and then emitted.
  • the lens is in the shape of a truncated cone, the light emitted by the LED chip is incident from the first surface of the lens, and after being converged by the lens, it is emitted from the second surface of the lens;
  • the area is larger than the area of the second surface.
  • the height of the second surface relative to the bottom is higher than the height of the side wall relative to the bottom.
  • the height of the light-shielding layer relative to the bottom is lower than the height of the sidewall relative to the bottom.
  • the bottom is provided with metal leads
  • the LED chip is connected to the metal leads through metal leads
  • the packaging layer covers the metal leads and the metal leads.
  • the refractive index of the lens is higher than that of the light shielding layer.
  • the light-shielding layer includes several layers of opaque glue.
  • the light-shielding layer is made of transparent colloidal material mixed with opaque material, and the opaque material includes titanium dioxide, silicon dioxide, carbon black or graphite.
  • the material of the lens includes glass material, polycarbonate material or PMMA material;
  • the material of the encapsulation layer includes epoxy resin, silicone resin or resin-like hybrid materials.
  • a method for manufacturing a high-contrast display screen LED device as described above comprising the following steps:
  • Dispensing glue on the surface of the first colloid making the opaque second colloid cover the first colloid, and curing the device after dispensing.
  • the present invention uses the lens to focus on the light emitted by the LED to improve the contrast ratio, and at the same time has an appropriate black ratio, which can avoid the adverse effects caused by excessive blackening treatment while maintaining a high contrast ratio .
  • Fig. 1 is a cross-sectional view of a high-contrast display screen LED device in Embodiment 1 of the present invention
  • Fig. 2 is a structural diagram of the LED device after wire bonding in a method for manufacturing an LED device according to Embodiment 1 of the present invention
  • FIG. 3 is a structural diagram of the LED device after the first dispensing of glue in a method for manufacturing an LED device according to Embodiment 1 of the present invention
  • FIG. 4 is a structural diagram of a lens inserted in a method for manufacturing an LED device according to Embodiment 1 of the present invention.
  • FIG. 5 is a flow chart of steps of a method for manufacturing an LED device in an embodiment of the present invention.
  • FIG. 6 is a schematic diagram of metal leads and metal pins in an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of a high-contrast display screen LED device with a lens in Embodiment 3 of the present invention.
  • FIG. 8 is a cross-sectional view of a high-contrast display screen LED device with a lens in Embodiment 4 of the present invention.
  • Fig. 9 is a flow chart of the steps of a method for manufacturing a high-contrast display screen LED device with a lens in Embodiment 4 of the present invention.
  • Fig. 10 is a cross-sectional view of a high-contrast display screen LED device with a lens in Embodiment 5 of the present invention.
  • FIG. 11 is a flow chart of the steps of a method for manufacturing a high-contrast display screen LED device with a lens in Embodiment 5 of the present invention.
  • Fig. 12 is a cross-sectional view of a high-contrast display screen LED device with a lens in Embodiment 6 of the present invention.
  • Fig. 13 is an overall structural diagram of a high-contrast display screen LED device in an embodiment of the present invention.
  • orientation descriptions such as up, down, front, back, left, right, etc. indicated orientations or positional relationships are based on the orientations or positional relationships shown in the drawings, and are only In order to facilitate the description of the present invention and simplify the description, it does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
  • this embodiment provides a high-contrast display screen LED device, including:
  • the housing 300 includes a bottom and a side wall, and the bottom and the side wall form an open cell cavity;
  • the LED chip 400 is arranged in the unit cavity
  • the lens 100 is arranged on the encapsulation layer 500, and the position of the lens 100 matches the position of the LED chip 400;
  • the light emitted by the LED chip 400 is converged by the lens 100 and then emitted.
  • matching the position of the lens 100 with the position of the LED chip 400 means that the lens 100 is above the LED chip 400, but it should be noted that it is not limited to this positional relationship, as long as the It is sufficient that the light can be converged and emitted through the lens.
  • the lens 100 is in the shape of a truncated cone, and the light emitted by the LED chip 400 is incident from the first surface of the lens 100, and after being converged by the lens 100, it is emitted from the second surface of the lens 100; the area of the first surface greater than the area of the second surface.
  • the second surface can be a plane or a curved surface.
  • the projected area of the upper surface of the lens 100 is small, and the projected area of the lower surface is large.
  • the light is incident from the lower side of the lens and enters the air after being converged by the lens 100 to increase brightness and contrast.
  • the height of the second surface relative to the bottom is higher than the height of the side wall relative to the bottom.
  • the height of the light-shielding layer 200 relative to the bottom is lower than the height of the sidewall relative to the bottom.
  • metal leads are provided at the bottom, the LED chip 400 is connected to the metal leads 302 through metal leads, and the packaging layer 500 covers the metal leads 302 and the metal leads 301 .
  • a PLCC package is adopted, wherein the materials of the metal leads 301 and the metal pins 302 include but not limited to copper, aluminum, iron and various alloys thereof.
  • the refractive index of the lens 100 is higher than that of the light shielding layer 200 .
  • the light-shielding layer 200 includes several layers of opaque glue.
  • the light-shielding layer 200 can be a single layer or multiple layers.
  • the forms of the light-shielding layer 200 include but are not limited to black glue, opaque white glue, white glue/black glue multi-layer structure, and glue with a lower refractive index than the lens 100 .
  • the light-shielding layer 200 is made of a transparent colloidal material mixed with an opaque material, and the opaque material includes titanium dioxide, silicon dioxide, carbon black or graphite.
  • the light-shielding layer 200 is a transparent colloidal material mixed with opaque materials.
  • the transparent colloidal material includes but is not limited to epoxy resin, silicone resin or resin-based mixed materials.
  • the mixed opaque material includes but not limited to titanium dioxide, silicon dioxide, carbon black, and graphite. wait.
  • the material of the lens 100 includes glass material, polycarbonate material or PMMA material;
  • the material of the encapsulation layer 500 includes epoxy resin, silicone resin or resin-based hybrid materials.
  • the material of the lens 100 is a transparent material with excellent light transmission performance, the light transmittance is 80%-100%, and the refractive index is higher than that of the opaque glue 200 wrapped around it.
  • Materials include but are not limited to glass, polycarbonate (PC), PMMA and other materials.
  • the present embodiment also provides a method for manufacturing an LED device, comprising the following steps:
  • Step S101 inserting LED chips, placing the RBG three-color LED chips 400 into designated positions in the casing 300 ; as shown in FIG. 2 .
  • Step S102 Welding wires, after fixing the LED chip on the casing, solder the positive and negative electrodes of the LED chip 400 to the positive and negative metal pins 302 of the lead frame with the metal leads 301 correspondingly.
  • the soldering temperature needs to be at least 100°C; as shown in Figure 2.
  • Step S103 dispensing glue for the first time, using a high-precision dispensing head to dispense glue on the surface of the LED chip 400 , the glue used is epoxy resin, and the glue must at least cover the LED chip 400 . Put the dispensed device into an oven for curing, and the curing temperature needs to be at least 45°C; as shown in Figure 3.
  • Step S104 inserting the lens, placing the lens 100 on the light-transmitting glue 500; as shown in FIG. 4 .
  • Step S105 dispensing glue for the second time, adding opaque glue 500 on top of the light-transmitting glue, the glue should cover the light-transmitting glue 200 and not exceed the surface of the housing. Put the dispensed device into an oven for curing, and the curing temperature is at least 80°C. If the opaque glue 200 is a multi-layer glue, further layer-by-layer dispensing and curing are required; as shown in FIG. 1 .
  • this embodiment provides a high-contrast display screen LED device with a lens, including a housing 300 and a lens 100;
  • the lens 100 is embedded on the top of the housing 300 , and a transparent encapsulation layer 500 is filled between the lens 100 and the LED chip 400 , and the encapsulation layer should at least cover the LED chip 400 .
  • Other spaces inside the casing 300 are filled with an opaque light-shielding layer 200 , the light-shielding layer 200 should at least cover the light-transmitting encapsulation layer 500 and not exceed the upper opening of the casing 300 .
  • the LED chip 400 is connected with a metal lead wire 301, and the metal lead wire 301 is connected with a metal pin 302 inside the housing 300 to communicate with an external control circuit.
  • the materials of the metal leads 301 and the metal pins 302 of the PLCC package are respectively Al and Au.
  • the contrast is improved by using the lens 100 to focus the light emitted by the LED chip 400 , and at the same time, it has an appropriate black ratio. In this way, the adverse effects caused by excessive blackening can be avoided while maintaining a high contrast.
  • the lens 100 is a spherical lens, and the material of the lens 100 is a PC material with good light transmission performance, which can improve the light transmission efficiency of the device.
  • the package is packaged by PLCC, and the LED chip is connected to the control circuit through metal leads 301 and metal pins 302, and there are 32 leads in total. Its soldering adopts reflow soldering process, which requires special soldering equipment, as shown in Figure 6 after soldering.
  • the LED device of this embodiment is very suitable for use in the case of relatively large external ambient light, and is used for displaying characters, pictures, and broadcasting and publicity of multimedia programs. At the same time, the device of this embodiment is also suitable for indoor environments, and also has a high contrast ratio. In addition, the LED device of this embodiment has better sealing performance and can isolate water and oxygen. Compared with other similar products, the proportion of the blackened part of the LED device of this embodiment is low, and the heat absorption capacity is weak, so it can work stably for a long time during the daytime in summer. In summary, the reliability of the LED device of this embodiment is relatively high.
  • this embodiment also provides a method for manufacturing an LED device, including the following steps:
  • Step S201 Inserting LED chips, placing the RBG three-color LED chips 400 into designated positions in the casing 300 respectively.
  • Step S202 wire welding, after fixing the LED chip on the housing, connect one end of the metal lead 301 to the electrode of the LED chip, and weld the other end to the metal pin 302 on one side of the housing.
  • Step S203 dispensing glue for the first time, using a high-precision dispensing head to dispense glue on the surface of the LED chip 400 , the glue used is epoxy resin, and the glue should cover the entire LED chip 400 and the above-mentioned metal leads 301 .
  • the curing temperature is 150°C
  • the curing time is 0.5 hours.
  • Step S204 placing the lens, placing the lens 100 on the epoxy resin layer.
  • Step S205 Dispensing glue for the second time, using a high-precision dispensing head to dispense glue on the surface of the LED chip.
  • the glue used is opaque glue, and the glue should cover the light-transmitting glue and not exceed the surface of the shell. Put the glued device into the oven for curing, the curing temperature is at least 150°C, and the curing time is 0.5 hours.
  • this embodiment provides a high-contrast display LED device with a lens.
  • the LED device in Embodiment 3 is mostly the same as the LED device in Embodiment 2, except that the shape of the lens 100 is different.
  • the upper surface (ie, the second surface) of the lens 100 in Example 3 is smooth.
  • this embodiment provides a high-contrast display screen LED device with a lens.
  • the LED device in Embodiment 4 is mostly the same as the LED device in Embodiment 2.
  • the difference lies in that the encapsulation layer 500 A layer of opaque glue 201 is added on top, and a light-shielding layer 200 is covered on the opaque glue 201 .
  • this embodiment provides a method for manufacturing a high-contrast display screen LED device with a lens, including the following steps:
  • Step S401 Inserting LED chips, placing the RBG three-color LED chips 400 into designated positions in the casing 300 respectively.
  • Step S402 wire welding, after fixing the LED chip on the housing, connect one end of the metal lead wire 301 to the electrode of the LED chip, and weld the other end to the metal pin 302 on one side of the housing.
  • Step S403 dispensing glue for the first time, using a high-precision dispensing head to dispense glue on the surface of the LED chip 400 , the glue used is epoxy resin, and the glue should cover the entire LED chip 400 and the above-mentioned metal leads 301 .
  • the curing temperature is 150°C
  • the curing time is 0.5 hours.
  • Step S404 inserting the lens, placing the lens 100 on the epoxy resin layer 500 .
  • Step S405 dispensing glue for the second time, using a high-precision dispensing head to dispense glue on the surface of the LED chip, adding other opaque glue 201 to the encapsulation layer 500, and adding other opaque glue 201 to cover the encapsulation layer 500, as shown in Figure 8 .
  • Step S406 dispensing glue for the third time, adding opaque glue (light-shielding layer 200 ), and the light-shielding layer 200 covers other opaque glue 201 .
  • this embodiment provides a high-contrast display screen LED device with a lens.
  • the LED device in Embodiment 5 is mostly the same as the LED device in Embodiment 4, except that: in the encapsulation layer 500 A layer of opaque glue 201 is added on top, and the top of the opaque glue 201 is blackened to form a blackened layer 600.
  • the opaque glue 201 and the blackened layer 600 form a light-shielding layer.
  • this embodiment provides a method for manufacturing a high-contrast display screen LED device with a lens, including the following steps:
  • Step S501 Inserting LED chips, placing the RBG three-color LED chips 400 into designated positions in the casing 300 .
  • Step S502 wire welding, after fixing the LED chip on the casing, connect one end of the metal lead 301 to the electrode of the LED chip, and weld the other end to the metal pin 302 on one side of the casing.
  • Step S503 dispensing glue for the first time, using a high-precision dispensing head to dispense glue on the surface of the LED chip 400 , the glue used is epoxy resin, and the glue should cover the entire LED chip 400 and the above-mentioned metal leads 301 .
  • the curing temperature is 150°C
  • the curing time is 0.5 hours.
  • Step S504 inserting the lens, placing the lens 100 on the epoxy resin layer 500 .
  • Step S505 dispensing glue for the second time, using a high-precision dispensing head to dispense glue on the surface of the LED chip, and adding other opaque glue 201 to the encapsulation layer 500 , which should be added to cover the encapsulation layer 500 .
  • Step S506 blackening the top of the other opaque glue 201 to form a blackening layer 600 .
  • this embodiment provides a LED device with a high-contrast display screen with a lens.
  • the LED device in Embodiment 6 is mostly the same as the LED device in Embodiment 5, except that: in the encapsulation layer 501 A layer of translucent glue 502 is added on top, and the top of the translucent glue 502 is blackened to form a blackened layer 600.
  • the light-transmissive glue 502 and the blackened layer 600 form a light-shielding layer.
  • the encapsulation layer 501 and the transparent glue 502 are made of the same material, and the refractive index of the material is lower than that of the lens 100 .

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Abstract

本发明公开了一种高对比度显示屏LED器件及其制造方法，其中LED器件包括：壳体，包括底部和侧壁，由所述底部和所述侧壁构成开口的单元腔；LED芯片，设置在所述单元腔内；透明的封装层，覆盖所述LED芯片；透镜，设置在所述封装层上，所述透镜的位置与所述LED芯片的位置匹配；不透光的遮光层，覆盖所述封装层，且部分包覆所述透镜；所述LED芯片发出的光线通过所述透镜进行会聚后射出。本发明利用透镜对LED出射光线的聚焦来提高对比度，同时具有适当的黑占比，这样可以规避因为过度的黑化处理带来的不利影响，同时保持较高的对比度。本发明可广泛应用于LED技术领域。

Description

一种高对比度显示屏LED器件及其制造方法 技术领域
本发明涉及LED技术领域，尤其涉及一种高对比度显示屏LED器件及其制造方法。
背景技术
LED显示屏已经社会广泛采用，而市面上的显示屏普遍存在对比度不高的情况，引起这一问题的主要原因是显示屏上的LED芯片反射了较多的外界光源。为了解决这一问题，目前很多产品都进行了黑化处理，加入碳粉黑漆等黑色材料来减少外界光源的反射。然而为了提升对比度而过分的黑化容易造成LED本身发光被吸收，造成器件效率不高，这是目前的一个技术矛盾。
发明内容
为至少一定程度上解决现有技术中存在的技术问题之一，本发明的目的在于提供一种高对比度显示屏LED器件及其制造方法。
本发明所采用的技术方案是：
一种高对比度显示屏LED器件，包括：
壳体，包括底部和侧壁，由所述底部和所述侧壁构成开口的单元腔；
LED芯片，设置在所述单元腔内；
透明的封装层，覆盖所述LED芯片；
透镜，设置在所述封装层上，所述透镜的位置与所述LED芯片的位置匹配；
不透光的遮光层，覆盖所述封装层，且部分包覆所述透镜；
所述LED芯片发出的光线通过所述透镜进行会聚后射出。
进一步，所述透镜呈圆台状，所述LED芯片发出的光线从所述透镜的第一表面射入，经所述透镜会聚后，从所述透镜的第二表面射出；所述第一表面的面积大于所述第二表面的面积。
进一步，所述第二表面相对于所述底部的高度比所述侧壁相对于所述底部的高度高。
进一步，所述遮光层相对于与所述底部的高度比所述侧壁相对于所述底部的高度低。
进一步，所述底部设有金属引脚，所述LED芯片通过金属引线与所述金属引脚连接，所述封装层覆盖所述金属引脚和所述金属引线。
进一步，所述透镜的折射率比所述遮光层的折射率高。
进一步，所述遮光层包括若干层不透光胶。
进一步，所述遮光层采用透明胶体材料混合不透明材料制成，所述不透明材料包括二氧化钛、二氧化硅、炭黑或者石墨。
进一步，所述透镜的材料包括玻璃材料、聚碳酸酯材料或者PMMA材料；
封装层的材料包括环氧树脂、硅树脂或者树脂类混合材料。
本发明所采用的另一技术方案是：
一种如上所述的一种高对比度显示屏LED器件的制造方法，包括以下步骤：
将LED芯片置入单元腔中预设位置后，将LED芯片固定在壳体上；
对所述LED芯片的表面进行点胶，使透光的第一胶体覆盖所述LED芯片，对点胶后的器件进行固化；
将透镜置于所述第一胶体上；
在所述第一胶体的表面进行点胶，使不透光的第二胶体覆盖所述第一胶体，对点胶后的器件进行固化。
本发明的有益效果是：本发明利用透镜对LED出射光线的聚焦来提高对比度，同时具有适当的黑占比，这样可以规避因为过度的黑化处理带来的不利影响，同时保持较高的对比度。
附图说明
为了更清楚地说明本发明实施例或者现有技术中的技术方案，下面对本发明实施例或者现有技术中的相关技术方案附图作以下介绍，应当理解的是，下面介绍中的附图仅仅为了方便清晰表述本发明的技术方案中的部分实施例，对于本领域的技术人员而言，在无需付出创造性劳动的前提下，还可以根据这些附图获取到其他附图。
图1是本发明实施例1中一种高对比度显示屏LED器件的剖视图；
图2是本发明实施例1的一种LED器件的制造方法中对LED器件焊线后的结构图；
图3是本发明实施例1的一种LED器件的制造方法中对LED器件进行第一次点胶后的结构图；
图4是本发明实施例1的一种LED器件的制造方法中置入透镜的结构图；
图5是本发明实施例中一种LED器件的制造方法的步骤流程图；
图6是本发明实施例中金属引线与金属引脚的示意图；
图7是本发明实施例3中一种带透镜的高对比度显示屏LED器件的剖视图；
图8是本发明实施例4中一种带透镜的高对比度显示屏LED器件的剖视图；
图9是本发明实施例4中一种带透镜的高对比度显示屏LED器件的制造方法的步骤流程 图；
图10是本发明实施例5中一种带透镜的高对比度显示屏LED器件的剖视图；
图11是本发明实施例5中一种带透镜的高对比度显示屏LED器件的制造方法的步骤流程图；
图12是本发明实施例6中一种带透镜的高对比度显示屏LED器件的剖视图；
图13是本发明实施例中一种高对比度显示屏LED器件的整体结构图。
附图标记：100-透镜；200-遮光层；300-壳体；400-LED芯片；500-封装层；301-金属引线；302-金属引脚。
具体实施方式
下面详细描述本发明的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本发明，而不能理解为对本发明的限制。对于以下实施例中的步骤编号，其仅为了便于阐述说明而设置，对步骤之间的顺序不做任何限定，实施例中的各步骤的执行顺序均可根据本领域技术人员的理解来进行适应性调整。
在本发明的描述中，需要理解的是，涉及到方位描述，例如上、下、前、后、左、右等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，若干的含义是一个或者多个，多个的含义是两个以上，大于、小于、超过等理解为不包括本数，以上、以下、以内等理解为包括本数。如果有描述到第一、第二只是用于区分技术特征为目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量或者隐含指明所指示的技术特征的先后关系。
本发明的描述中，除非另有明确的限定，设置、安装、连接等词语应做广义理解，所属技术领域技术人员可以结合技术方案的具体内容合理确定上述词语在本发明中的具体含义。
实施例1
如图1和图13所示，本实施例提供一种高对比度显示屏LED器件，包括：
壳体300，包括底部和侧壁，由底部和侧壁构成开口的单元腔；
LED芯片400，设置在单元腔内；
透明的封装层500，覆盖LED芯片400；
透镜100，设置在封装层500上，透镜100的位置与LED芯片400的位置匹配；
不透光的遮光层200，覆盖封装层500，且部分包覆透镜100；
LED芯片400发出的光线通过透镜100进行会聚后射出。
在本实施例中，透镜100的位置与LED芯片400的位置匹配指的是：透镜100处于LED芯片400的上方，但需要注意的是，不局限于这种位置关系，只要能够使芯片发出的光能够经过透镜进行会聚并发射即可。
进一步作为可选的实施方式，透镜100呈圆台状，LED芯片400发出的光线从透镜100的第一表面射入，经透镜100会聚后，从透镜100的第二表面射出；第一表面的面积大于第二表面的面积。其中，第二表面可以为平面，也可以为曲面。
透镜100的上表面投影面积小，下表面投影面积大。光线从所述透镜的下侧入射，经透镜100会聚后进入空气中，以增加亮度，提高对比度。
进一步作为可选的实施方式，第二表面相对于底部的高度比侧壁相对于底部的高度高。
进一步作为可选的实施方式，遮光层200相对于与底部的高度比侧壁相对于底部的高度低。
进一步作为可选的实施方式，底部设有金属引脚，LED芯片400通过金属引线与金属引脚连接302，封装层500覆盖金属引脚302和金属引线301。
采用PLCC封装，其中金属引线301和金属引脚302的材料包括但不限于铜，铝，铁及其各种合金等材料。
进一步作为可选的实施方式，透镜100的折射率比遮光层200的折射率高。
进一步作为可选的实施方式，遮光层200包括若干层不透光胶。
遮光层200可为单层或多层，遮光层200的形式包括但不限于黑胶，不透光的白胶，白胶/黑胶多层结构，折射率比透镜100低的胶。
进一步作为可选的实施方式，遮光层200采用透明胶体材料混合不透明材料制成，不透明材料包括二氧化钛、二氧化硅、炭黑或者石墨。
遮光层200为透明胶体材料混合不透明的材料，透明胶体材料包括但不限于环氧树脂、硅树脂或树脂类混合材料等，混合不透明的材料包括但不限于二氧化钛，二氧化硅，炭黑，石墨等。
进一步作为可选的实施方式，透镜100的材料包括玻璃材料、聚碳酸酯材料或者PMMA材料；
封装层500的材料包括环氧树脂、硅树脂或者树脂类混合材料。
透镜100材料为透光性能优异的透明材料，透光度80％-100％，折射率比包覆于周围的不透光的胶200的折射率高。材料包括但不限于玻璃，聚碳酸酯(PC)，PMMA等材料。
如图5所示，针对上述的LED器件，本实施例还提供一种LED器件的制造方法，包括 以下步骤：
步骤S101：置入LED芯片，将RBG三色LED芯片400分别置入壳体300内指定的位置上；如图2所示。
步骤S102：焊线，将LED芯片固定于壳体上之后，将所述金属引线301将LED芯片400的正负电极与引线框架的正负金属引脚302对应焊接。焊接温度至少需要100℃；如图2所示。
步骤S103：第一次点胶，使用高精度点胶头在LED芯片400表面点胶，所用胶体为环氧树脂，胶体至少需覆盖LED芯片400。将点胶后的器件放入烘箱进行固化，固化温度至少需要45℃；如图3所示。
步骤S104：置入透镜，将所述透镜100置于透光的胶500之上；如图4所示。
步骤S105：第二次点胶，在透光的胶上部加入不透光的胶500，胶体要覆盖透光的胶200，并不超过壳体表面。将点好胶的器件放入烘箱进行固化，固化温度至少为80℃。若不透光的胶200为多层胶体，则需进一步的分层点胶固化；如图1所示。
实施例2
如图1所示，本实施例提供一种带透镜的高对比度显示屏LED器件，包括壳体300和透镜100；
透镜100嵌在壳体300的顶端，透镜100和LED芯片400之间填充透光的封装层500，该封装层应至少覆盖LED芯片400。在壳体300内部的其他空间内填充不透光的遮光层200，该遮光层200应至少覆盖透光的封装层500，且不超出壳体300的上口。LED芯片400接有金属引线301，金属引线301在壳体300内部与金属引脚302相连，联通外界控制电路。PLCC封装的金属引线301和金属引脚302的材料分别采用Al和Au。本实施例利用透镜100对LED芯片400出射光线的聚焦来提高对比度，同时具有适当的黑占比。这样可以规避因为过度的黑化处理带来的不利影响，同时保持较高的对比度。
在一些可选的实施例中，透镜100为球面透镜，透镜100的材料为透光性能良好的PC材料，可提高器件的通光效率。
在一些可选的实施例中，装方式采用PLCC封装，LED芯片通过金属引线301和金属引脚302与控制电路相连，共有32个引线。其焊接采用回流焊工艺，需要专用的焊接设备，焊线后如图6所示。
本实施例的LED器件十分适用于在外界环境光较大的情况下使用，用于显示文字，图画和多媒体节目的播放与宣传。同时本实施例的器件也适用于室内环境，同样具有较高的对比度。另外，本实施例的LED器件有较好的密封性，能隔绝水氧。相较于其他同类产品，本实施例的LED器件黑化部分占比低，吸热能力弱，故可以在夏日白天时段长时间稳定工作。综 上所述，本本实施例的LED器件的可靠性较高。
针对上述的LED器件，本实施例还提供一种LED器件的制造方法，包括以下步骤：
步骤S201：置入LED芯片，将RBG三色LED芯片400分别置入壳体300内指定的位置上。
步骤S202：焊线，将LED芯片固定于壳体上之后，将所述金属引线301一端接至LED芯片电极，将其另一端焊接至壳体一侧的金属引脚302。
步骤S203：第一次点胶，使用高精度点胶头在LED芯片400表面点胶，所用胶体为环氧树脂，胶体要覆盖整个LED芯片400及上述金属引线301。将点胶后的器件放入烘箱进行固化，固化温度为150℃，固化时间为0.5小时。
步骤S204：置入透镜，将所述透镜100置于环氧树脂层之上。
步骤S205：第二次点胶，使用高精度点胶头在LED芯片表面点胶，所用胶体为不透光的胶，胶体要覆盖透光的胶，并不超过壳体表面。将点好胶的器件放入烘箱进行固化，固化温度至少为150℃，固化时间为0.5个小时。
实施例3
如图7所示，本实施例提供一种带透镜的高对比度显示屏LED器件，实施例3中的LED器件与实施例2中的LED器件大部分相同，不同之处在于：透镜100形状不同，实施例3中的透镜100的上表面(即第二表面)平滑。
实施例4
如图8所示，本实施例提供一种带透镜的高对比度显示屏LED器件，实施例4中的LED器件与实施例2中的LED器件大部分相同，不同之处在于：在封装层500上加入一层不透明的胶201，在不透明的胶201上覆上遮光层200。
如图9所示，本实施例提供一种带透镜的高对比度显示屏LED器件的制造方法，包括以下步骤：
步骤S401：置入LED芯片，将RBG三色LED芯片400分别置入壳体300内指定的位置上。
步骤S402：焊线，将LED芯片固定于壳体上之后，将所述金属引线301一端接至LED芯片电极，将其另一端焊接至壳体一侧的金属引脚302。
步骤S403：第一次点胶，使用高精度点胶头在LED芯片400表面点胶，所用胶体为环氧树脂，胶体要覆盖整个LED芯片400及上述金属引线301。将点胶后的器件放入烘箱进行固化，固化温度为150℃，固化时间为0.5小时。
步骤S404：置入透镜，将所述透镜100置于环氧树脂层500之上。
步骤S405：第二次点胶，使用高精度点胶头在LED芯片表面点胶，在封装层500加入其他不透明的胶201，该加入其他不透明的胶201覆盖封装层500，如图8所示。
步骤S406：第三次点胶，加入不透明的胶(遮光层200)，遮光层200覆盖其他不透明的胶201。
实施例5
如图10所示，本实施例提供一种带透镜的高对比度显示屏LED器件，实施例5中的LED器件与实施例4中的LED器件大部分相同，不同之处在于：在封装层500上加入一层不透明的胶201，对该不透明的胶201的顶部进行黑化处理，形成黑化层600，由该不透明的胶201和黑化层600构成遮光层。
如图11所示，本实施例提供一种带透镜的高对比度显示屏LED器件的制造方法，包括以下步骤：
步骤S501：置入LED芯片，将RBG三色LED芯片400分别置入壳体300内指定的位置上。
步骤S502：焊线，将LED芯片固定于壳体上之后，将所述金属引线301一端接至LED芯片电极，将其另一端焊接至壳体一侧的金属引脚302。
步骤S503：第一次点胶，使用高精度点胶头在LED芯片400表面点胶，所用胶体为环氧树脂，胶体要覆盖整个LED芯片400及上述金属引线301。将点胶后的器件放入烘箱进行固化，固化温度为150℃，固化时间为0.5小时。
步骤S504：置入透镜，将所述透镜100置于环氧树脂层500之上。
步骤S505：第二次点胶，使用高精度点胶头在LED芯片表面点胶，在封装层500加入其他不透明的胶201，该加入其他不透明的胶201覆盖封装层500。
步骤S506：将其他不透明的胶201的顶部进行黑化处理，形成黑化层600。
实施例6
如图12所示，本实施例提供一种带透镜的高对比度显示屏LED器件，实施例6中的LED器件与实施例5中的LED器件大部分相同，不同之处在于：在封装层501上加入一层透光的胶502，对该透光的胶502的顶部进行黑化处理，形成黑化层600，由该透光的胶502和黑化层600构成遮光层。
其中，封装层501和透光的胶502采用的材料相同，材料的折射率低于透镜100的折射率。
在本说明书的上述描述中，参考术语“一个实施方式/实施例”、“另一实施方式/实施例”或“某些实施方式/实施例”等的描述意指结合实施方式或示例描述的具体特征、结构、材料或者 特点包含于本发明的至少一个实施方式或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施方式或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施方式或示例中以合适的方式结合。
尽管已经示出和描述了本发明的实施方式，本领域的普通技术人员可以理解：在不脱离本发明的原理和宗旨的情况下可以对这些实施方式进行多种变化、修改、替换和变型，本发明的范围由权利要求及其等同物限定。
以上是对本发明的较佳实施进行了具体说明，但本发明并不限于上述实施例，熟悉本领域的技术人员在不违背本发明精神的前提下还可做作出种种的等同变形或替换，这些等同的变形或替换均包含在本申请权利要求所限定的范围内。

Claims (10)

  1. 一种高对比度显示屏LED器件，其特征在于，包括：
    壳体，包括底部和侧壁，由所述底部和所述侧壁构成开口的单元腔；
    LED芯片，设置在所述单元腔内；
    透明的封装层，覆盖所述LED芯片；
    透镜，设置在所述封装层上，所述透镜的位置与所述LED芯片的位置匹配；
    不透光的遮光层，覆盖所述封装层，且部分包覆所述透镜；
    所述LED芯片发出的光线通过所述透镜进行会聚后射出。
  2. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述透镜呈圆台状，所述LED芯片发出的光线从所述透镜的第一表面射入，经所述透镜会聚后，从所述透镜的第二表面射出；所述第一表面的面积大于所述第二表面的面积。
  3. 根据权利要求2所述的一种高对比度显示屏LED器件，其特征在于，所述第二表面相对于所述底部的高度比所述侧壁相对于所述底部的高度高。
  4. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述遮光层相对于与所述底部的高度比所述侧壁相对于所述底部的高度低。
  5. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述底部设有金属引脚，所述LED芯片通过金属引线与所述金属引脚连接，所述封装层覆盖所述金属引脚和所述金属引线。
  6. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述透镜的折射率比所述遮光层的折射率高。
  7. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述遮光层包括若干层不透光胶。
  8. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述遮光层采用透明胶体材料混合不透明材料制成，所述不透明材料包括二氧化钛、二氧化硅、炭黑或者石墨。
  9. 根据权利要求1所述的一种高对比度显示屏LED器件，其特征在于，所述透镜的材料包括玻璃材料、聚碳酸酯材料或者PMMA材料；
    封装层的材料包括环氧树脂、硅树脂或者树脂类混合材料。
  10. 一种如权利要求1-9任一项所述的一种高对比度显示屏LED器件的制造方法，其特征在于，包括以下步骤：
    将LED芯片置入单元腔中预设位置后，将LED芯片固定在壳体上；
    对所述LED芯片的表面进行点胶，使透光的第一胶体覆盖所述LED芯片，对点胶后的器件进行固化；
    将透镜置于所述第一胶体上；
    在所述第一胶体的表面进行点胶，使不透光的第二胶体覆盖所述第一胶体，对点胶后的器件进行固化。
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