WO2023109682A1 - 存储卡 - Google Patents

存储卡 Download PDF

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Publication number
WO2023109682A1
WO2023109682A1 PCT/CN2022/137987 CN2022137987W WO2023109682A1 WO 2023109682 A1 WO2023109682 A1 WO 2023109682A1 CN 2022137987 W CN2022137987 W CN 2022137987W WO 2023109682 A1 WO2023109682 A1 WO 2023109682A1
Authority
WO
WIPO (PCT)
Prior art keywords
card
gold finger
gold
finger
fingers
Prior art date
Application number
PCT/CN2022/137987
Other languages
English (en)
French (fr)
Inventor
范姝男
杨江涛
周雷
张诗豪
Original Assignee
华为技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Publication of WO2023109682A1 publication Critical patent/WO2023109682A1/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/0772—Physical layout of the record carrier
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/40—Securing contact members in or to a base or case; Insulating of contact members

Definitions

  • the present application relates to the technical field of communications, and in particular to a memory card.
  • the present application provides a memory card, which can be installed in a card socket assembly compatible with a Nano SIM card, so that the electronic device does not need to be additionally equipped with a card socket assembly that is individually adapted to the memory card, which is conducive to thinning the electronic device.
  • the application provides a memory card, including a card body and a card interface, the card interface is fixed on the card body and exposed to one side of the card body, and the size of the card body of the memory card is the same as the size of the card body of the Nano SIM card. same.
  • the card body of the memory card comprises a first side, a second side, a third side and a fourth side, the first side and the third side are arranged oppositely and extend along the length direction of the memory card, the second side and the fourth side are arranged oppositely and Extending along the width direction of the memory card, the distance between the second side and the fourth side is greater than the distance between the first side and the third side, one corner of the card body of the memory card is a cut corner, and the cut corner is arranged between the first side and the second side between sides.
  • the first side and the third side may be arranged parallel or approximately parallel
  • the second side and the fourth side may be arranged parallel or approximately parallel.
  • the card interface includes ten gold fingers arranged in an array.
  • the ten gold fingers are arranged along the length direction of the memory card into a first row of gold fingers and a second row of gold fingers.
  • the first row of gold fingers is located between the second side and the second side.
  • the first row of gold fingers includes the first gold finger, the third gold finger, the fifth gold finger, the seventh gold finger and the ninth gold finger arranged in sequence along the width direction of the memory card, the second row of gold fingers
  • the fingers include the second gold finger, the fourth gold finger, the sixth gold finger, the eighth gold finger and the tenth gold finger arranged sequentially along the width direction of the memory card; the first gold finger is located on the first side and the third gold finger between, the second gold finger is located between the first side and the fourth gold finger.
  • all gold fingers of the memory card interface are arranged on one side surface of the card body, and the size of the card body of the memory card is the same as the size of the card body of the Nano SIM card.
  • the layout of the fabric is partially similar to that of the Nano SIM card, so that the Nano SIM card can be compatible with the same card holder component, so as to reduce the number of card holder components of the electronic device, which is conducive to the thinning of the electronic device.
  • the ten gold fingers are arranged along the width direction of the memory card into a first row of gold fingers to a fifth row of gold fingers.
  • the center distance between the second row of gold fingers and the third row of gold fingers and the center distance between the third row of gold fingers and the fourth row of gold fingers are greater than the center distance between the first row of gold fingers and the second row of gold fingers, and greater than the center distance of the fourth row of gold fingers.
  • the center distance between the third row of gold fingers and the fourth row of gold fingers is greater than the center distance between the first row of gold fingers and the second row of gold fingers, and greater than the center distance between the fourth row of gold fingers and the fifth row of gold fingers.
  • the ten golden fingers of the memory card are plugged into the card holder assembly compatible with the Nano SIM card by setting the arrangement and center distance, so as to reduce the number of card holder assemblies of the electronic device, which is beneficial to the electronic device. Thin and light.
  • the center distance between the second row of gold fingers and the third row of gold fingers is in the range of 1.5 mm to 2.8 mm
  • the center distance between the third row of gold fingers and the fourth row of gold fingers is in the range of 1.5 mm to 2.8 mm.
  • the center distance between the first row of gold fingers and the second row of gold fingers is in the range of 1.0mm to 1.7mm
  • the center distance between the fourth row of gold fingers and the fifth row of gold fingers is in the range of 1.0mm to 1.7mm within range.
  • the third gold finger corresponds to the position of the first gold finger of the Nano SIM card; the fourth gold finger corresponds to the position of the second gold finger of the Nano SIM card; the fifth gold finger corresponds to the third gold finger of the Nano SIM card. Finger positions correspond; the sixth gold finger corresponds to the fourth gold finger position of the Nano SIM card; the seventh gold finger corresponds to the fifth gold finger position of the Nano SIM card; the eighth gold finger corresponds to the sixth gold finger position of the Nano SIM card .
  • the third to eighth gold fingers of the memory card correspond to the positions of the first to sixth gold fingers of the Nano SIM card, so that the memory card can be well inserted into compatible The card holder assembly of the Nano SIM card.
  • the memory card and the Nano SIM card can be installed in the same card holder assembly, and the card connector of the card holder assembly includes first to tenth elastic pieces arranged in an array.
  • the third gold finger is electrically connected to the third spring piece of the card connector
  • the fourth gold finger is electrically connected to the fourth spring piece of the card connector
  • the fifth gold finger is electrically connected to the fifth spring piece of the card connector.
  • the sixth golden finger is electrically connected to the sixth shrapnel of the card connector
  • the seventh golden finger is electrically connected to the seventh shrapnel of the card connector
  • the eighth golden finger is electrically connected to the eighth shrapnel of the card connector;
  • the first gold finger of the Nano SIM card is electrically connected to the third shrapnel of the card connector
  • the second gold finger of the Nano SIM card is electrically connected to the fourth shrapnel of the card connector
  • the Nano SIM card The third gold finger of the Nano SIM card is electrically connected to the fifth shrapnel of the card connector
  • the fourth gold finger of the Nano SIM card is electrically connected to the sixth shrapnel of the card connector
  • the fifth gold finger of the Nano SIM card is electrically connected to the seventh shrapnel of the card connector
  • the sixth golden finger of the Nano SIM card is electrically connected to the eighth shrapnel of the card connector.
  • the memory card supports the UFS interface protocol; four of the ten gold fingers of the memory card are used to transmit data signals, one gold finger is used to transmit a reference clock signal, and one gold finger is used to transmit the second A power signal, a gold finger for transmitting a ground signal, and a gold finger for transmitting a second power signal.
  • the memory card can support the UFS protocol and realize the basic performance of a high-speed card.
  • the remaining two gold fingers can be set in the air; or, one of the remaining two gold fingers can be set in the air, and the other gold finger is used for transmission detection signal; or, one of the remaining two gold fingers is used to transmit detection signals, and the other gold finger is used to transmit other signals; or, the remaining two gold fingers are both used to transmit detection signals.
  • the detection signal can be a special data signal.
  • the memory card transmits the detection signal through at least one of the golden fingers, which can reduce the difficulty of identifying the memory card by the electronic device.
  • the golden fingers which can reduce the difficulty of identifying the memory card by the electronic device.
  • one or two of the remaining two gold fingers may also be used to transmit other signals.
  • the memory card supports the UFS interface protocol; the first golden finger, the third golden finger, the ninth golden finger, and the tenth golden finger are used to transmit data signals, and the second golden finger is used to transmit the second power signal , the fourth gold finger is used to transmit the reference clock signal, the seventh gold finger is used to transmit the ground signal, and the eighth gold finger is used to transmit the first power signal.
  • the fifth gold finger and the sixth gold finger are suspended in the air.
  • at least one of the fifth gold finger or the sixth gold finger is used to transmit the detection signal.
  • the memory card supports the UFS interface protocol; the first golden finger, the fifth golden finger, the ninth golden finger, and the tenth golden finger are used to transmit data signals, and the second golden finger is used to transmit the second power signal.
  • the fourth gold finger is used to transmit the reference clock signal, the seventh gold finger is used to transmit the ground signal, and the eighth gold finger is used to transmit the first power signal.
  • the third gold finger and the sixth gold finger are suspended; or, at least one of the third gold finger or the sixth gold finger is used to transmit a detection signal.
  • the memory card supports the UFS interface protocol; the first golden finger, the fifth golden finger, the ninth golden finger, and the tenth golden finger are used to transmit data signals, and the second golden finger is used to transmit the second power signal.
  • the sixth gold finger is used to transmit the reference clock signal, the seventh gold finger is used to transmit the ground signal, and the eighth gold finger is used to transmit the first power signal.
  • the third gold finger and the fourth gold finger are suspended; or, at least one of the third gold finger or the fourth gold finger is used to transmit a detection signal.
  • the memory card is further provided with a high-voltage circuit or a protection switch, and the high-voltage circuit or the protection switch is electrically connected to the fourth gold finger and the tenth gold finger.
  • the high voltage circuit or protection switch is used to prevent the circuit from burning out when the card interface of the memory card is short-circuited.
  • the memory card supports the PCIe interface protocol or the SD interface protocol.
  • the memory card supports the PCIe interface protocol or the SD interface protocol.
  • the memory card can support the PCIe interface protocol or the SD interface protocol to realize the basic performance of the high-speed card.
  • one of the ten gold fingers can be suspended in the air.
  • one of the gold fingers is not suspended, and is used for transmitting detection signals.
  • the detection signal can be a special data signal.
  • the electronic device can identify whether the inserted information card is a memory card through the detection signal; in some embodiments, the electronic The device may also identify the version of the inserted memory card through the detection signal, or identify the interface protocol of the inserted memory card.
  • the memory card transmits a detection signal through one of the golden fingers, which can reduce the difficulty for electronic devices to identify the memory card.
  • the memory card supports the PCIe interface protocol or the SD interface protocol; the third golden finger, the sixth golden finger, the ninth golden finger, and the tenth golden finger are used to transmit data signals, and the first golden finger is used to transmit The second power signal, the seventh gold finger is used to transmit the ground signal, the eighth gold finger is used to transmit the first power signal; the fifth gold finger is used to transmit the clock signal, and one of the second gold finger and the fourth gold finger is used for transmitting clock signals.
  • the other of the second gold finger and the fourth gold finger is suspended in the air or is used to transmit a detection signal.
  • the memory card is further provided with a high-voltage-resistant circuit or a protection switch, and the high-voltage-resistant circuit or the protection switch is electrically connected to the third gold finger and the tenth gold finger.
  • the high voltage circuit or protection switch is used to prevent the circuit from burning out when the card interface of the memory card is short-circuited.
  • the memory card supports the PCIe interface protocol or the SD interface protocol; the third golden finger, the sixth golden finger, the ninth golden finger, and the tenth golden finger are used to transmit data signals, and the second golden finger is used to transmit The second power signal, the seventh gold finger is used to transmit the ground signal, the eighth gold finger is used to transmit the first power signal; the fifth gold finger is used to transmit the clock signal, and one of the first gold finger and the fourth gold finger is used for transmitting clock signals.
  • the other one of the first gold finger and the fourth gold finger is suspended in the air or is used for transmitting a detection signal.
  • the memory card supports the PCIe interface protocol or the SD interface protocol; the sixth gold finger, the ninth gold finger, and the tenth gold finger are used to transmit data signals, and one of the first gold finger and the second gold finger One is used to transmit the second power signal, and the other is used to transmit the data signal; the seventh gold finger is used to transmit the ground signal, the eighth gold finger is used to transmit the first power signal; the fifth gold finger is used to transmit the clock signal, and the One of the three gold fingers and the fourth gold finger is used to transmit a clock signal.
  • the other one of the third gold finger and the fourth gold finger is suspended in the air or is used for transmitting a detection signal.
  • the distance between the first side and the third side is 8.8 mm
  • the distance between the second side and the fourth side is 12.3 mm.
  • the present application also provides another memory card, including a card body and a card interface, the card interface is fixed on the card body and exposed to one side of the card body, and the size of the card body is the same as that of the Nano SIM card.
  • the card body of the memory card includes a first side, a second side, a third side and a fourth side, the first side and the third side are arranged oppositely and extend along the length direction of the memory card, and the second side and the fourth side are arranged oppositely And extending along the width direction of the memory card, the distance between the second side and the fourth side is greater than the distance between the first side and the third side; one corner of the card body of the memory card is a cut corner, and the cut corner is arranged on the first side and the third side between the two sides.
  • the card interface includes eight gold fingers arranged in an array.
  • the eight gold fingers are arranged along the length direction of the memory card into a first row of gold fingers and a second row of gold fingers.
  • the first row of gold fingers is located between the second side and the second side.
  • the first row of gold fingers includes the first gold finger, the third gold finger, the fifth gold finger and the seventh gold finger arranged along the width direction of the memory card
  • the second row of gold fingers includes The second gold finger, the fourth gold finger, the sixth gold finger and the eighth gold finger are arranged in the width direction, the first gold finger is located between the first side and the third gold finger, and the second gold finger is located between the first side and the third gold finger. between the fourth golden fingers.
  • the first to sixth gold fingers correspond to the positions of the six gold fingers of the Nano SIM card. That is, the first gold finger corresponds to the position of the first gold finger of the Nano SIM card; the second gold finger corresponds to the position of the second gold finger of the Nano SIM card; the third gold finger corresponds to the position of the third gold finger of the Nano SIM card ; The fourth gold finger corresponds to the position of the fourth gold finger of the Nano SIM card; the fifth gold finger corresponds to the position of the fifth gold finger of the Nano SIM card; the sixth gold finger corresponds to the position of the sixth gold finger of the Nano SIM card.
  • the memory card supports the UFS interface protocol; the first gold finger, the fourth gold finger, the seventh gold finger and the eighth gold finger are used to transmit data signals, the second gold finger is used to transmit reference clock signals, and the third gold finger is used to transmit For the second power signal, the fifth gold finger is used to transmit the ground signal, and the sixth gold finger is used to transmit the first power signal.
  • the size of the card body of the memory card is the same as the size of the card body of the Nano SIM card.
  • the layout of the fabric is partially similar to that of the Nano SIM card, so that the Nano SIM card can be compatible with the same card holder component, so as to reduce the number of card holder components of the electronic device, which is conducive to the thinning of the electronic device.
  • the memory card can support the UFS interface protocol for high-speed transmission.
  • the distance between the first side and the third side is 8.8 mm
  • the distance between the second side and the fourth side is 12.3 mm.
  • FIG. 1 is a schematic structural diagram of an electronic device provided in an embodiment of the present application.
  • Fig. 2 is a schematic structural view of the deck assembly shown in Fig. 1 in some usage states;
  • Fig. 3 is a schematic diagram of an exploded structure of the deck shown in Fig. 2;
  • Fig. 4 is a structural schematic diagram of the card holder shown in Fig. 2 at another angle;
  • FIG. 5 is a schematic structural diagram of a card connector provided in an embodiment of the present application.
  • Fig. 6 is a structural schematic view 1 of the card connector shown in Fig. 5 at another angle;
  • Fig. 7 is a schematic structural view of the conductor of the card connector shown in Fig. 6;
  • Fig. 8 is a schematic diagram of the internal structure of the structure at A of the card connector shown in Fig. 6;
  • Fig. 9 is a structural schematic diagram II of the card connector shown in Fig. 5 at another angle;
  • Fig. 10 is a schematic block diagram of a Nano SIM card provided by the embodiment of the present application.
  • Fig. 11 is a schematic structural view of the Nano SIM card shown in Fig. 10 in some embodiments.
  • Fig. 12 is a structural schematic diagram when the Nano SIM card shown in Fig. 11 is connected to the card connector shown in Fig. 5;
  • Fig. 13 is a schematic block diagram of a first NM card provided by an embodiment of the present application.
  • Fig. 14 is a schematic structural diagram of the first NM card shown in Fig. 13 in some embodiments.
  • Fig. 15 is a structural schematic diagram when the first NM card shown in Fig. 14 is connected to the card connector shown in Fig. 5;
  • Fig. 16 is a schematic block diagram of a second NM card provided by an embodiment of the present application.
  • Fig. 17 is a schematic structural diagram of the second NM card shown in Fig. 16 in some embodiments.
  • Fig. 18 is a schematic structural view of the connection between the second NM card shown in Fig. 17 and the card connector shown in Fig. 5;
  • Fig. 19 is a schematic block diagram of some embodiments of some circuits of the electronic device shown in Fig. 1;
  • Figure 20 is a dimensional drawing of the second NM card shown in Figure 17 in some embodiments.
  • Figure 21A is a dimensional drawing of the second NM card shown in Figure 16 in other embodiments.
  • Fig. 21B is another dimensional drawing of the second NM card shown in Fig. 21A;
  • Figure 22 is a dimensional drawing of the second NM card shown in Figure 16 in other embodiments.
  • Fig. 23 is a dimensional drawing of the second NM card shown in Fig. 16 in other embodiments.
  • Figure 24 is a schematic diagram of the second NM card shown in Figure 17 in some embodiments.
  • Fig. 25 is a schematic diagram of some embodiments of the electronic device shown in Fig. 1;
  • Fig. 26 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 27 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 28 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 29 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 30 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 31 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 32 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 33 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 34 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 35 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 36 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 37 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 38 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 39 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 40 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 41 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Figure 42 is a schematic diagram of the second NM card shown in Figure 17 in other embodiments.
  • Fig. 43 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 44 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 45 is a schematic structural diagram of a second NM card provided in an embodiment of the present application in another embodiment
  • Fig. 46 is a schematic diagram of a partial circuit in some embodiments of the electronic device provided by the embodiment of the present application.
  • Fig. 47 is a schematic diagram of a partial circuit in some embodiments of the electronic device provided by the embodiment of the present application.
  • Fig. 48 is a schematic diagram of the connection structure between the second NM card shown in Fig. 45 and the card connector shown in Fig. 5;
  • Fig. 49 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments;
  • Fig. 50 is a schematic diagram of some circuits of the electronic device shown in Fig. 1 in other embodiments.
  • first and second are used for description purposes only, and cannot be understood as implying or implying relative importance or implicitly specifying the quantity of indicated technical features.
  • a feature defined as “first” and “second” may explicitly or implicitly include one or more of these features.
  • orientation terms mentioned in the embodiments of the present application for example, "upper”, “lower”, “front”, “rear”, “left”, “right”, “inner”, “outer”, “side”, “Top”, “bottom” and so on are only referring to the directions of the accompanying drawings. Therefore, the orientation terms used are for better and clearer description and understanding of the embodiments of the present application, rather than indicating or implying the referred device or Elements must have certain orientations, be constructed and operate in certain orientations, and therefore should not be construed as limitations on the embodiments of the present application.
  • connection may be detachable connection or non-detachable connection; it may be direct connection or indirect connection through an intermediary.
  • FIG. 1 is a schematic structural diagram of an electronic device 100 provided in an embodiment of the present application.
  • the electronic device 100 may be an electronic product such as a mobile phone, a tablet, or a smart wearable device.
  • the electronic device 100 is a mobile phone as an example for illustration.
  • the electronic device 100 may include a socket assembly 10 , a processor 20 , a casing 30 , a display screen 40 and a circuit board 50 .
  • the display screen 40 can be installed in the casing 30, and the display screen 40 is used for displaying images, videos and the like.
  • the circuit board 50 is installed inside the housing 30 , and the processor 20 can be fixed on the circuit board 50 and electrically connected to the circuit board 50 .
  • the card holder assembly 10 includes a card holder 1 and a card holder 2 .
  • the card holder 1 can be installed inside the housing 30 , and the card holder 1 can also be fixedly connected to the circuit board 50 and electrically connected with the circuit board 50 .
  • the processor 20 can be electrically connected to the deck 1 through the circuit board 50 .
  • the card tray 2 is detachably plugged into the card holder 1 .
  • the card tray 2 is used to install one or more information cards.
  • the card tray 2 can carry the information cards and insert them into the card holder 1, so that the information cards can be inserted into the card holder assembly 10, and the information cards communicate with the electronic device 100.
  • the information card may be a Nano SIM (subscriber identification module, subscriber identification module) card, a Nano memory card or a Nano two-in-one card.
  • Nano SIM card is also called 4FF card, such as ETSI TS 102 221 V11.0.0 specification, the size of the card body is 12.30mm in length, 8.80mm in width, and 0.67mm in thickness.
  • the user can insert a Nano SIM card into the card holder assembly 10, and the Nano SIM card communicates with the processor 20, and the electronic device 100 interacts with the network through the Nano SIM card to realize functions such as calling and data communication.
  • Nano memory card can also be referred to as NM (nano memory, nano storage) card for short.
  • the user can also insert an NM card into the deck assembly 10, and the NM card communicates with the processor 20 to realize the data storage function. For example, files such as music and video can be saved in the NM card.
  • the Nano two-in-one card may include a SIM card circuit and a memory card circuit, the SIM card circuit is used to support functions such as calling and data communication, and the memory card circuit is used to support data storage functions.
  • the user can also insert a Nano 2-in-1 card into the deck assembly 10, and the Nano 2-in-1 card communicates with the processor 20 to realize functions such as calling, data communication and data storage.
  • the electronic device 100 may also include an internal memory, a universal serial bus (universal serial bus, USB) interface, a charging management module, a power management module, a battery, an antenna, a mobile communication module, a wireless communication module, an audio module, One or more of a speaker, a receiver, a microphone, an earphone jack, a sensor module, a button, a motor, an indicator, and a camera.
  • the electronic device 100 may have more or fewer components than the above solutions, may combine two or more components, or may have different component configurations.
  • the various components described above may be implemented in hardware, software, or a combination of hardware and software including one or more signal processing and/or application specific integrated circuits.
  • the processor 20 may include one or more processing units, for example: the processor 20 may include an application processor (application processor, AP), a modem processor, a graphics processing unit (graphics processing unit, GPU) ), image signal processor (image signal processor, ISP), controller, memory, video codec, digital signal processor (digital signal processor, DSP), baseband processor, neural network processor (neural-network processing unit , NPU), etc., which are not strictly limited in this embodiment of the present application. Wherein, different processing units may be independent devices, or may be integrated in one or more processors 20 . Wherein, the processor 20 may further include one or more interfaces, and the processor 20 may communicate with other components of the electronic device 100 through one or more interfaces.
  • application processor application processor
  • AP application processor
  • modem processor graphics processing unit
  • ISP image signal processor
  • controller memory
  • video codec digital signal processor
  • DSP digital signal processor
  • NPU neural-network processing unit
  • different processing units may be independent devices, or may be integrated in one or more processors
  • FIG. 2 is a schematic structural view of the deck assembly 10 shown in FIG. It shows the structural diagram of the card tray 2 at another angle.
  • the card socket 1 may include a socket body 12 , a first card connector 13 , a second card connector 14 , an ejection component 15 and an insertion detection spring 16 .
  • the base 12 is generally in the shape of a cover, and the base 12 includes a top plate 121 and a plurality of side plates 122 connected to the top plate 121 .
  • the top plate 121 and the multiple side plates 122 together define an inner space 123 of the base 12 .
  • the first card connector 13 is located in the inner space 123 of the base body 12 and is fixedly connected to the base body 12 .
  • the first card connector 13 is opposite to the top plate 121 .
  • the structure of the second card connector 14 may be the same as or different from that of the first card connector 13 .
  • the second card connector 14 is located in the inner space 123 of the seat body 12, the second card connector 14 is located on the side of the first card connector 13 facing away from the top plate 121, the second card connector 14 is opposite to the first card connector 13 Set, a gap is formed between the second card connector 14 and the first card connector 13 .
  • the first card connector 13 , the second card connector 14 and the side plate 122 of the base body 12 together define the card slot 17 of the card base 1 . Wherein, one end of the slot 17 is opened to form an opening, and the other end of the slot 17 forms the bottom of the slot 17 .
  • the ends of the plurality of side plates 122 away from the top plate 121 are fixed to the circuit board 50 of the electronic device 100 .
  • the solder pins of the first card connector 13 are fixedly connected and electrically connected to the circuit board 50 , so that the first card connector 13 can be electrically connected to the processor 20 of the electronic device 100 .
  • the second card connector 14 can be fixedly connected to the circuit board 50 so as to be fixedly connected to the socket body 12 through the circuit board 50 . Alternatively, the second card connector 14 can also be fixedly connected to the seat body 12 directly.
  • the solder pins of the second card connector 14 are fixedly connected and electrically connected to the circuit board 50 , so that the second card connector 14 can be electrically connected to the processor 20 of the electronic device 100 .
  • the card tray 2 may have a first installation groove 21 and a second installation groove 22 arranged opposite to each other. Both the first installation slot 21 and the second installation slot 22 are used for installing an information card.
  • the opening dimensions of the first installation slot 21 and the second installation slot 22 may be the same or similar, and the sizes of the card bodies of the two information cards installed in the first installation slot 21 and the second installation slot 22 are the same.
  • the opening size of the first installation groove 21 and the second installation groove 22 can also be different, and the sizes of the card bodies of the two information cards installed in the first installation groove 21 and the second installation groove 22 are different.
  • the slot size of the first installation groove 21 and the second installation groove 22 is adapted to the size of the card body of the corresponding information card, for example, the slot size of the first installation groove 21 and the second installation groove 22 can be slightly larger than the corresponding The size of the card body of the information card, but the size difference is not large, so that the information card can be smoothly loaded into the first installation groove 21 and the second installation groove 22, and the installation position is relatively stable.
  • the card tray 2 can be alone or carry an information card, and be inserted into the card slot 17 through the opening of the card slot 17 .
  • the direction in which the card tray 2 and/or the information card is inserted into the card slot 17 (that is, the card insertion direction) is the direction from the opening of the card slot 17 to the bottom of the card slot 17 .
  • the size of the draw-in groove 17 is adapted to the size of the draw-in groove 2, for example, the size of the draw-in groove 17 can be slightly larger than the size of the draw-in groove 2 but the two are not much different, there is a gap between the draw-in groove 2 and the wall of the draw-in groove 17 With a certain fit gap, the card holder 2 can be smoothly inserted into the card slot 17 and can be stably installed in the card slot 17 .
  • the information card carried by the card tray 2 is inserted into the card slot 17
  • the information card mounted on the card tray 2 is electrically connected to the first card connector 13 or the second card connector 14 to electrically connect to the electronic device 100 .
  • the ejection assembly 15 can be installed on the seat body 12 and/or the first card connector 13 .
  • the user can control the ejection component 15 so that the ejection component 15 pushes the card tray 2 out of the card slot 17 so that the user can remove the card tray 2 .
  • the insertion detection spring 16 may be installed on the first card connector 13 and electrically connected to the circuit board 50 .
  • the insertion detection spring 16 may be at least partially located at the bottom of the slot 17 .
  • the insertion detection elastic piece 16 can be used to detect whether the card tray 2 is inserted into the card slot 17 .
  • the card holder 1 may also be provided with a card connector, the card holder assembly 10 is used to install an information card, and the structure of the card holder 2 is adjusted adaptively.
  • the card holder 1 can also be provided with three or more card connectors, so that the card holder assembly 10 can be used to install more than three information cards, and the structure of the card holder 2 can be adjusted adaptively.
  • the embodiment of the present application does not strictly limit the number and position of the card connectors of the card socket 1, the specific structure of the card tray 2, and the like.
  • the cartridge 1 may also be provided with an ejection component 15 and/or an insertion detection elastic piece 16 that is different from the structure shown in the figure.
  • the socket assembly 10 may include more or less components than those in the above embodiments, which is not strictly limited in this embodiment of the present application.
  • FIG. 5 is a schematic structural diagram of a card connector 11 provided by an embodiment of the present application
  • FIG. 6 is a structural schematic diagram 1 of the card connector 11 shown in FIG. 5 at another angle.
  • the card connector 11 shown in FIG. 5 can be applied to the card holder 1 shown in FIG. 3 as the first card connector 13 and/or the second card connector 14 .
  • the embodiment of the present application provides a card connector 11, which can be applied to the card holder 1 of the electronic device 100, and the card connector 11 is used for connecting an information card.
  • the card connector 11 includes a plurality of elastic pieces, and when the card connector 11 is connected with an information card, the elastic pieces bear against the information card.
  • the card connector 11 includes ten elastic pieces arranged in an array, and the ten elastic pieces are spaced apart from each other.
  • the ten shrapnel can be roughly arranged in a 2 ⁇ 5 array structure. For example, ten shrapnels are arranged along the first direction into a first row of shrapnel to a fifth row of shrapnel, and arranged along a second direction into a first row of shrapnel and a second row of shrapnel.
  • the first row of elastic sheets includes the first elastic sheet 11a, the third elastic sheet 11c, the fifth elastic sheet 11e, the seventh elastic sheet 11g and the ninth elastic sheet 11i arranged along the first direction
  • the second row of elastic sheets includes the first elastic sheet arranged along the first direction.
  • the first elastic sheet 11a and the second elastic sheet 11b are located in the first row of elastic sheets
  • the third elastic sheet 11c and the fourth elastic sheet 11d are located in the second row of elastic sheets
  • the fifth elastic sheet 11e and the sixth elastic sheet 11f are located in the third row of elastic sheets
  • the seventh elastic sheet 11g and The eighth elastic sheet 11h is located in the fourth row of elastic sheets
  • the ninth elastic sheet 11i and the tenth elastic sheet 11j are located in the fifth row of elastic sheets.
  • the center points of the plurality of elastic sheets in the same row can be aligned in the first direction
  • the arrangements may also be not aligned but slightly staggered, which is not strictly limited in this embodiment of the present application.
  • the center points of the two elastic sheets in the same row that is, the center points of the part of the elastic sheets used to hold the information card
  • the arrangements may also be not aligned but slightly staggered, which is not strictly limited in this embodiment of the present application.
  • the card insertion direction of the information card inserted into the card holder assembly 10 card slot 17 is parallel to the second direction, that is, The insertion direction of the information card when it is connected to the card connector 11 is parallel to the second direction.
  • the information card first contacts the structure arranged on the front side of the card connector 11 , and then contacts the structure arranged on the rear side of the card connector 11 .
  • the front structure of the card connector 11 is close to the opening of the card slot 17
  • the rear structure of the card connector 11 is away from the opening of the card slot 17 .
  • the second row of elastic sheets of the card connector 11 may be located at the rear side of the first row of elastic sheets, and the second row of elastic sheets is farther away from the opening of the card slot 17 of the card socket assembly 10 than the first row of elastic sheets.
  • the second row of elastic pieces of the card connector 11 may also be closer to the opening of the card slot 17 of the card socket assembly 10 than the first row of elastic pieces, and this solution will not be repeated in this embodiment of the present application.
  • FIG. 7 is a schematic structural diagram of the conductor 113 of the card connector 11 shown in FIG. 6 .
  • the card connector 11 includes an insulating body 112 and a conductor 113 .
  • the insulating body 112 may be roughly plate-shaped, and the insulating body 112 is also provided with a plurality of hollowed-out areas arranged at intervals.
  • the insulating body 112 may include six first hollowed out regions 1121 , a plurality of second hollowed out regions 1122 and a plurality of third hollowed out regions 1123 .
  • the six first hollowed out areas 1121 can be arranged in two rows and three rows, including the first row of first hollowed out areas 1121 and the second row of first hollowed out areas 1121 located behind the first row of first hollowed out areas 1121 .
  • the second hollowed out areas 1122 can be arranged in two rows, and the two rows of second hollowed out areas 1122 are respectively located at the rear side of the two rows of first hollowed out areas 1121 .
  • the third hollow areas 1123 may be arranged in a row and located behind the first hollow areas 1121 in the second row.
  • the conductor 113 is embedded in the insulating body 112 .
  • the conductor 113 may be formed by punching an integral metal plate.
  • the conductor 113 includes ten elastic pieces and ten fixing pieces 1131.
  • the ten elastic pieces may include the above-mentioned first elastic piece 11a to the tenth elastic piece 11j.
  • the ten fixing pieces 1131 are connected to the ten elastic pieces in one-to-one correspondence. All are conductive materials.
  • the conductor 113 includes ten conductive blocks, a corresponding fixing piece 1131 and an elastic piece are located on the same conductive block, and the ten conductive blocks are spaced apart from each other.
  • ten fixing parts 1131 are embedded in the insulating body 112 to be fixedly connected to the insulating body 112 , and the ten elastic pieces are respectively fixedly connected to the insulating body 112 through the ten fixing parts 1131 .
  • each elastic piece (for the sake of brevity in the drawings, one of the elastic pieces (such as 11j) is marked) includes a fixed end 111a, an abutting end 111b and a movable end 111c, and the fixed end 111a, the abutting end 111b and the movable end 111c are sequentially arranged along the extending direction of the elastic pieces, and the extending direction of the elastic pieces is perpendicular to the first direction, that is, parallel to the second direction.
  • the fixed end 111 a is connected to the fixing member 1131 , and the fixed end 111 a is fixed to the insulating body 112 through the fixing member 1131 .
  • the abutting end 111b protrudes from one side surface of the insulating body 112 to elastically hold the information card when the card connector 11 is connected to the information card.
  • the movable end 111c is movably mounted on the insulating body 112 , and the movable end 111c can move relative to the insulating body 112 in a second direction.
  • the abutment end 111b abuts the information card, and the abutment end 111b moves toward the direction close to the insulating body 112, and the movable end 111c is displaced relative to the insulating body 112, and the shrapnel moves smoothly.
  • Deformation occurs, and the elastic force of the elastic piece against the information card is moderate, so that the information card can be smoothly connected to the card connector 11, and the risk of damage to the information card due to excessive elastic force of the elastic piece can be reduced, and the reliability is improved.
  • the shrapnel also includes a first connecting section 111d and a second connecting section 111e, the first connecting section 111d connects the fixed end 111a and the abutting end 111b, the second connecting section 111e connects the abutting end 111b and the movable end 111c, and the abutting end 111b protrudes relative to the first connecting section 111d and the second connecting section 111e.
  • the abutting end 111b is at the highest point, followed by the first connecting section 111d and the second connecting section 111e, and the fixed end 111a and The movable end 111c is located at the lowest position.
  • the elastic piece is held by the abutting end 111b and electrically connected to the information card.
  • the first connecting section 111d, the fixed end 111a, the second connecting section 111e and the movable end 111c do not contact the information card and are connected to the information card. A gap is formed.
  • the abutment end 111b may include a protruding abutment contact point 111f, and the abutment contact point 111f has a certain contact area.
  • the third elastic piece 11c to the eighth elastic piece 11h may be respectively located in six first hollow areas 1121, the first elastic piece 11a may be located in the same first hollow area 1121 as the third elastic piece 11c, and the second elastic piece 11b may be The fourth elastic piece 11d is located in the same first hollow area 1121, the seventh elastic piece 11g can be located in the same first hollow area 1121 as the ninth elastic piece 11i, and the eighth elastic piece 11h can be located in the same first hollow area 1121 as the tenth elastic piece 11j. In the hollow area 1121 .
  • Each fixing piece 1131 surrounds or partially surrounds the corresponding elastic piece.
  • the elastic piece located alone in a first hollow area 1121 is completely surrounded by the corresponding fixing piece 1131 .
  • the fifth elastic piece 11e is independently located in one of the first hollow areas 1121 , and the fixing member 1131 connecting the fifth elastic piece 11e completely surrounds the fifth elastic piece 11e.
  • the sixth elastic piece 11f is independently located in one of the first hollow areas 1121 , and the fixing piece 1131 connecting the sixth elastic piece 11f completely surrounds the sixth elastic piece 11f.
  • the corresponding two fixing pieces 1131 tend to enclose the two elastic pieces together, and half surround the corresponding elastic pieces respectively.
  • the first elastic piece 11a and the third elastic piece 11c are located in the same first hollow area 1121, and the fixing piece 1131 connecting the first elastic piece 11a and the fixing piece 1131 connecting the third elastic piece 11c surround the first elastic piece 11a and the third elastic piece 11c together.
  • the fixing piece 1131 connected to the first elastic piece 11a half surrounds the first elastic piece 11a
  • the fixing piece 1131 connected to the third elastic piece 11c half surrounds the third elastic piece 11c.
  • the seventh elastic piece 11g and the ninth elastic piece 11i are located in the same first hollow area 1121, the fixing piece 1131 connecting the seventh elastic piece 11g and the fixing piece 1131 connecting the ninth elastic piece 11i surround the seventh elastic piece 11g and the ninth elastic piece 11i together
  • the fixing piece 1131 connected to the seventh elastic piece 11g half surrounds the seventh elastic piece 11g
  • the fixing piece 1131 connected to the ninth elastic piece 11i half surrounds the ninth elastic piece 11i.
  • the relationship between the second elastic piece 11b and the fourth elastic piece 11d and its corresponding fixing member 1131 , and the relationship between the eighth elastic piece 11h and the tenth elastic piece 11j and its corresponding fixing member 1131 refer to the above description, which will not be repeated here.
  • FIG. 8 is a schematic diagram of the internal structure of the structure at A of the card connector 11 shown in FIG. 6 .
  • FIG. 8 schematically shows the connection structure between the movable end 111c of the elastic piece and the insulating body 112 .
  • the tenth elastic piece 11j is taken as an example for labeling.
  • the insulating body 112 further includes a communication hole 1124 , and the communication hole 1124 communicates with the adjacent first hollow area 1121 and the second hollow area 1122 .
  • the movable end 111c of the elastic piece is plugged into the communication hole 1124 , and the end of the movable end 111c includes a stop block 1111 , and the stop block 1111 cooperates with the insulating body 112 to form an anti-loosening structure.
  • the anti-detachment structure can effectively prevent the movable end 111 c of the elastic piece from detaching from the insulating body 112 , which improves the connection reliability between the elastic piece and the insulating body 112 , making the card connector 11 highly reliable.
  • the fixed end 111a and the abutting end 111b of the elastic piece are located in the first hollow area 1121, the movable end 111c of the elastic piece is inserted into the communication hole 1124, and extends to the second hollow area 1122 through the communication hole 1124, and the stop block 1111 is at least partially Located in the second hollow area 1122 .
  • the width of the communication hole 1124 in the locking direction is smaller than the width of the stop block 1111 in the locking direction
  • the locking direction can be any direction
  • the size of the communication hole 1124 in a certain direction is smaller than that of the stop block 1111.
  • the size in the same direction can make the stop block 1111 cooperate with the insulating body 112 to form an anti-off structure, so as to prevent the stop block 1111 from passing through the communication hole 1124 and cause the movable end 111c of the elastic piece to detach from the insulating body 112 .
  • the width of the stop block 1111 is greater than the width of the communication hole 1124 . It can be understood that, the embodiment of the present application does not strictly limit the shape and size of the communication hole 1124 and the shape and size of the stop block 1111 .
  • each conductive block of the conductor 113 also includes a welding leg 1132 (for the sake of brevity, part of the welding leg 1132 is marked in the drawings), and the welding leg 1132 is fixedly connected to the fixing member 1131.
  • the solder feet 1132 are used for soldering to the circuit board 50 (refer to FIG. 1 ), so that the card connector 11 is fixedly connected to the circuit board 50 , and the elastic piece is electrically connected to the circuit board 50 .
  • the number of welding feet 1132 in each conductive block is at least one.
  • At least one soldering leg 1132 of each conductive block includes a first soldering leg 1133, and the first soldering leg 1133 is disposed close to the fixed end 111a of the elastic piece. That is, the first welding leg 1133 is connected to the end of the fixing member 1131 close to the fixing end 111 a of the elastic piece.
  • a frictional force is generated between the information card and the abutting end 111b of the elastic piece, which makes the elastic piece have a tendency to move along the card insertion direction (that is, the second direction), and the fixed end 111a of the elastic piece under tension.
  • the conductive block is provided with the first soldering leg 1133 close to the fixed end 111a of the shrapnel, and the first soldering leg 1133 welds the circuit board 50, so that the force on the shrapnel is transmitted to the circuit board 50 by the first soldering leg 1133, and the fixing member of the conductive block 1131 is not easily deformed, and the connection relationship between the fixing member 1131 and the insulating body 112 is stable, which is beneficial to improving the reliability of the card connector 11 and the card socket assembly 10 . It can be understood that, during the process of pulling out the information card, the first welding leg 1133 can also transmit stress.
  • At least one soldering leg 1132 of a part of the conductive block may further include a second soldering leg 1134, and the second soldering leg 1134 is disposed close to the movable end 111c of the elastic piece. That is, the second welding leg 1134 is connected to the end of the fixing member 1131 close to the movable end 111c of the elastic piece.
  • the movable end 111c generates a pulling force on the insulating body 112 through the anti-off structure, and the conductive block is provided with the second welding leg 1134 close to the movable end 111c of the shrapnel, and the second welding leg 1134 welds the circuit board 50, so that the force on the insulating body 112 is determined by
  • the second welding leg 1134 is transmitted to the circuit board 50 , the fixing part 1131 of the conductive block is not easily deformed, and the connection relationship between the fixing part 1131 and the insulating body 112 is stable, which is beneficial to improving the reliability of the card connector 11 and the card socket assembly 10 .
  • the first welding leg 1133 can also transmit stress.
  • both the first welding leg 1133 and the second welding leg 1134 can transmit stress.
  • solder feet 1132 on the conductive block may also be connected to other positions of the fixing member 1131 , for example connecting to the middle of the fixing member 1131 , which is not strictly limited in this embodiment of the present application.
  • part of the plurality of solder legs 1132 of the conductor 113 may be located in the first hollow area 1121 , and part of the solder pins 1132 may be located in the third hollow area 1123 , and the arrangement positions may refer to FIG. 6 .
  • the plurality of welding feet 1132 of the conductor 113 may also have other arrangements.
  • the third hollow area 1123 is set, which is not strictly limited in this embodiment of the present application.
  • FIG. 9 is a second structural diagram of the card connector 11 shown in FIG. 5 at another angle.
  • the distance S2 between the centers of the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f) is larger than that of the first row of shrapnel (11a, 11b) and the second row of shrapnel (11c, 11d).
  • the center-to-center distance S1 is greater than the center-to-center distance S4 between the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j).
  • the center distance S3 between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h) is greater than the center distance S1 between the first row of shrapnel (11a, 11b) and the second row of shrapnel (11c, 11d), and It is greater than the center-to-center spacing S4 of the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j).
  • the center distance S2 between the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f), the center distance S3 between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h) Larger, the center distance S1 between the first row of shrapnel (11a, 11b) and the second row of shrapnel (11c, 11d), the center distance S4 of the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j) smaller.
  • the center distance between the two rows of shrapnels is the center distance between the two shrapnels in the same row;
  • the spacing in the first direction between the center points of the part for example, the contact point 111f.
  • the center distance between the two rows of shrapnel is the average of the center distance between the two shrapnels of the first row of shrapnel and the center distance of the two shrapnels of the second row of shrapnel value.
  • the center distance between the third elastic piece 11c and the fifth elastic piece 11e is greater than the center distance between the first elastic piece 11a and the third elastic piece 11c and the center distance between the seventh elastic piece 11g and the ninth elastic piece 11i;
  • the center distance of the seventh elastic piece 11g is greater than the center distance between the first elastic piece 11a and the third elastic piece 11c and the center distance between the seventh elastic piece 11g and the ninth elastic piece 11i;
  • the center distance between the fourth elastic piece 11d and the sixth elastic piece 11f is larger than that of the second elastic piece
  • the center distance between the sixth elastic piece 11f and the eighth elastic piece 11h is greater than the center distance between the second elastic piece 11b and the fourth elastic piece 11d and the The distance between the centers of the eighth shrapnel 11h and the tenth shrapnel 11j.
  • the center-to-center distance S2 between the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f) may be in the range of 1.0mm to 3.0mm, for example, may be in the range of 1.5mm to 2.8mm, For example, it can be 2.48mm, 2.54mm, 2.59mm, 2.63mm, etc.; and/or, the center distance S3 between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h) can be 1.0mm to 3.0mm range, such as 1.5mm to 2.8mm, such as 2.48mm, 2.54mm, 2.59mm, 2.63mm, etc.; and/or, the first row of shrapnel (11a, 11b) and the second row of shrapnel (11c, 11d) center spacing S1 can be in the range of 1.0mm to 1.7mm, such as 1.03mm, 1.07mm, 1.12mm, etc
  • center distance S2 between the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f) and the center distance S3 between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h) can be Equal or unequal, which is not strictly limited in this embodiment of the present application.
  • Center-to-center distances of corresponding two sets of elastic sheets in two adjacent rows of elastic sheets may be equal or unequal, which is not strictly limited in this embodiment of the present application.
  • the center distance between the first shrapnel 11a and the third shrapnel 11c, and the center distance between the second shrapnel 11b and the fourth shrapnel 11d May or may not be equal.
  • multiple elastic sheets can form various combinations.
  • the number and position are matched, so that the card connector 11 can communicate with different types of information cards, realize multi-card compatibility, and have good expandability. Therefore, when the card connector 11 is applied to the card socket assembly 10 of the electronic device 100, the electronic device 100 can be adapted to various types of information cards through the same card socket assembly 10, thereby reducing the number of card socket assemblies 10 and reducing the This reduces the occupation of the internal space of the electronic device 100 , which is conducive to thinning the electronic device 100 .
  • the card connector 11 can communicate with a Nano SIM card with six golden fingers (also referred to as terminals, ports, metal contacts, etc.), or with a Nano SIM card with ten golden fingers or eight golden fingers. Or the second NM card communication with other golden fingers to be compatible with the Nano SIM card and the second NM card.
  • the size of the card body of the second NM card is the same as that of the Nano SIM card.
  • the card bodies of the two information cards have the same size, which may mean that the card bodies of the two information cards have the same size, or the card bodies of the two information cards are very similar in size and can be placed stably In the same installation groove of the card holder 2 of the card holder assembly 10 .
  • the card connector 11 can communicate with a Nano SIM card with six gold fingers, or with a second NM card with ten gold fingers or eight gold fingers or other numbers of gold fingers. It can communicate with the first NM card with eight golden fingers, so as to be compatible with Nano SIM card, the second NM card and the first NM card.
  • the first NM card is a first-generation NM card
  • the second NM card is a second-generation NM card
  • the transmission rate of the second NM card is greater than that of the first NM card.
  • the size of the card body of the first NM card can be identical with the size of the card body of the Nano SIM card.
  • the card connector 11 can communicate with a Nano SIM card with six gold fingers, and can also communicate with a 2-in-1 card with at least ten gold fingers, so as to be compatible with the Nano SIM card and the 2-in-1 card.
  • the size of the card body of the two-in-one card is the same as that of the Nano SIM card.
  • the card connector 11 may also be compatible with the first NM card and/or the second NM card when being compatible with the Nano SIM card and the 2-in-1 card, which is not strictly limited in this embodiment of the present application.
  • the present application provides a Nano SIM card, which can be adapted to the above-mentioned card connector 11.
  • the structure of the Nano SIM card and the connection structure between the Nano SIM card and the card connector 11 are described below with examples.
  • Figure 10 is a schematic block diagram of a Nano SIM card 3 provided by the embodiment of the present application
  • Figure 11 is a schematic structural diagram of the Nano SIM card 3 shown in Figure 10 in some embodiments
  • Figure 12 It is a structural schematic diagram when the Nano SIM card 3 shown in FIG. 11 is connected to the card connector 11 shown in FIG. 5 .
  • the Nano SIM card 3 may include a card body 31 and a card interface 32.
  • the card body 31 includes a package 311 and a control circuit 312 and a SIM circuit 313 disposed in the package 311 .
  • the card interface 32 is fixed on the card body 31 and exposed relative to the card body 31 .
  • the card interface 32 is electrically connected to the control circuit 312 .
  • the package 311 is used to package the control circuit 312, the SIM circuit 313 and the electrical connection lines between the control circuit 312, the SIM circuit 313 and the card interface 32 for protection.
  • the package 311 is made of a dielectric material, and the dielectric material includes but not limited to ethylene-vinyl acetate (EVA), polyvinyl butyral (polyvinyl butyral, PVB), ionomer, polyolefin (polyolefins, PO), silicon, thermoplastic polyurethane and other materials.
  • EVA ethylene-vinyl acetate
  • PVB polyvinyl butyral
  • ionomer polyolefin (polyolefins, PO), silicon, thermoplastic polyurethane and other materials.
  • the Nano SIM card 3 has length direction, width direction and thickness direction perpendicular to each other, the maximum dimension of the card body 31 of the Nano SIM card 3 in the length direction is its length, and the maximum dimension in the width direction is its width, The largest dimension in the thickness direction is its thickness.
  • the size of the card body 31 of the Nano SIM card 3 can be 12.30mm in length, 8.80mm in width, and 0.67mm in thickness.
  • the size of the card body of the information card is the size of the outer contour of the package of the card body.
  • the card interface 32 of the Nano SIM card 3 in Fig. 11 is set up;
  • the card interface 32 of the SIM card 3 is arranged downwards, and the card connector 11 is positioned at the Nano SIM card 3 below.
  • the card body 31 of the Nano SIM card 3 includes a first side 3111, a second side 3112, a third side 3113 and a fourth side 3114, and the first side 3111 and the third side 3113 are arranged opposite and along the Nano SIM card 3 extends in the length direction, and the second side 3112 and the fourth side 3114 are oppositely arranged and extend along the width direction of the Nano SIM card 3.
  • the distance between the second side 3112 and the fourth side 3114 is greater than the distance between the first side 3111 and the third side 3113 .
  • the first side 3111 and the third side 3113 are long sides
  • the second side 3112 and the fourth side 3114 are short sides.
  • the first side 3111 and the third side 3113 may be arranged parallel or approximately parallel
  • the second side 3112 and the fourth side 3114 may be arranged parallel or approximately parallel.
  • one corner of the card body 31 of the Nano SIM card 3 is a cut corner, and the cut corner is arranged between the first side 3111 and the second side 3112.
  • the cut corner forms a cut edge 3115
  • the cut edge 3115 forms an obtuse angle with the first side 3111 and forms an obtuse angle with the second side 3112 .
  • a circular arc transition structure or an inverted Corner transition structure between the adjacent sides of the card body 31 of the Nano SIM card 3 (including the first side 3111, the second side 3112, the third side 3113, the fourth side 3114 and the cut side 3115), a circular arc transition structure or an inverted Corner transition structure.
  • the card body 31 of the Nano SIM card 3 may not be provided with the above-mentioned cut corners, which is not strictly limited in the present application.
  • the card interface 32 of the Nano SIM card 3 includes at least six gold fingers, for example, including a first gold finger 321, a second gold finger 322, a third gold finger 323, a fourth gold finger 324, a Hardware finger 325 and sixth gold finger 326 .
  • the first gold finger 321 is closer to the cut edge 3115 of the card body 31 of the Nano SIM card 3 than other gold fingers.
  • the Nano SIM card 3 When the card tray 2 is equipped with a Nano SIM card 3, the Nano SIM card 3 is inserted into the card holder assembly 10, and the Nano SIM card 3 is connected to the card connector 11, ten shrapnels of the card connector 11 are all against the Nano SIM card 3, wherein, The third elastic piece 11c to the eighth elastic piece 11h (that is, the second row of elastic pieces to the fourth row of elastic pieces) of the card connector 11 resist and electrically connect the first gold finger 321 to the sixth gold finger 321 of the Nano SIM card 3 in one-to-one correspondence. Finger 326 is electrically connected to the Nano SIM card 3.
  • the elastic piece of the card connector 11 abuts against the golden finger of the information card, the two can realize electrical connection.
  • the card connector 11 arranges the third elastic piece 11c to the eighth elastic piece 11h in two rows and three rows, and the third elastic piece 11c to the eighth elastic piece 11h can be against the first Nano SIM card 3 in one-to-one correspondence.
  • One gold finger 321 to the sixth gold finger 326, the card connector 11 can be electrically connected with the Nano SIM card 3 to realize communication.
  • the distance between the centers of the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f) and the distance between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11f) 11h) the center distance is set in the range of 1.5mm to 2.8mm, so that the electronic device 100 can communicate with the first golden finger 321 to the sixth golden finger 326 of the Nano SIM card 3 through the third elastic piece 11c to the eighth elastic piece 11h, And it can effectively reduce the risk of a short circuit between the gold fingers of the Nano SIM card 3, so that the electrical connection between the card connector 11 and the Nano SIM card 3 is reliable.
  • Nano SIM cards 3 of different countries/different operators may be different, resulting in different arrangements of gold fingers.
  • the Nano SIM card 3 shown in Figure 11 is one of the golden finger arrangements defined for compliance with the specification.
  • the card connector 11 and the card holder assembly 10 are compatible with Nano SIM cards 3 of various countries/different operators.
  • the first row of shrapnel (11a, 11b) and the fifth row of shrapnel (11i, 11j) of the card connector 11 bear against the Nano SIM card 3.
  • the first elastic piece 11a and the third elastic piece 11c can resist and electrically connect the first golden finger of the Nano SIM card 3 321
  • the second elastic piece 11b and the fourth elastic piece 11d can resist and be electrically connected to the second golden finger 322 of the Nano SIM card 3
  • the seventh elastic piece 11g and the ninth elastic piece 11i can resist and be electrically connected to the fifth golden finger of the Nano SIM card 3
  • the finger 325, the eighth elastic piece 11h and the tenth elastic piece 11j can resist and be electrically connected to the sixth gold finger 326 of the Nano SIM card 3.
  • the two shrapnel against the same gold finger can pass through the gold finger.
  • a plurality of golden fingers of the card interface 32 of the Nano SIM card 3 may also have an arrangement structure different from that of FIG.
  • One row of shrapnel (11a, 11b) and the fifth row of shrapnel (11i, 11j) bear against the card body 31 of the Nano SIM card 3; or, the first shrapnel 11a and the third shrapnel 11c of the card connector 11 can resist and electrically Connect the first gold finger 321 of the Nano SIM card 3, the second elastic piece 11b and the fourth elastic piece 11d can resist and electrically connect the second golden finger 322 of the Nano SIM card 3, the fifth row of elastic pieces (11i, 11j) resist the card body 31 of the Nano SIM card 3; or, the seventh elastic piece 11g and the ninth elastic piece 11i can resist and electrically connect the fifth golden finger 325 of the Nano SIM card 3, and the eighth elastic piece 11h and the tenth elastic piece 11j can The sixth golden finger 326 of the Nano SIM card 3 is resisted and electrically connected, and the first
  • the first row of elastic sheets (11a, 11b) and/or the fifth row of elastic sheets (11i, 11j) of the card connector 11 are against the card body 31 of the Nano SIM card 3
  • the first row of elastic sheets (11a, 11b) And/or the fifth row of shrapnel (11i, 11j) is not in contact with the gold fingers of the Nano SIM card 3, and there is no electrical connection between them.
  • the embodiment of the present application does not strictly limit the specific connection structure of the first row of elastic sheets (11a, 11b) and the fifth row of elastic sheets (11i, 11j) of the card connector 11 and the Nano SIM card 3.
  • the six golden fingers of the Nano SIM card 3 can be used to transmit data signal (DATA), clock signal (clock, CLK), programming voltage/input signal (programming voltage/input signal, VPP), reset signal ( reset signal, RST), ground signal (GND) and power signal (VCC).
  • data signal also known as the I/O signal
  • programming voltage/input signal programming voltage/input signal, VPP
  • NFC near field communication
  • Table 1 is a correspondence table between multiple shrapnels of the card connector 11 and multiple gold fingers of the Nano SIM card 3 and their transmission signals.
  • the third elastic piece 11c of the card connector 11 is electrically connected to the first golden finger 321 of the Nano SIM card 3, and the first golden finger 321 is used to transmit data signals (DATA);
  • the fourth elastic piece 11d is electrically connected to the Nano SIM card 3
  • the second gold finger 322, the second gold finger 322 is used to transmit the clock signal (CLK);
  • the fifth shrapnel 11e is electrically connected to the third gold finger 323 of the Nano SIM card 3, and the third gold finger 323 is used for programming voltage/input signal (VPP);
  • the sixth shrapnel 11f is electrically connected to the fourth golden finger 324 of the Nano SIM card 3, and the fourth golden finger 324 is used to transmit a reset signal (RST);
  • the seventh shrapnel 11g is electrically connected to the fifth golden finger 325 of the Nano SIM card 3 , the fifth gold finger 325 is
  • the six golden fingers of the Nano SIM card 3 may also have other correspondences with the above six signals, and the six golden fingers of the Nano SIM card 3 may also be used to transmit other combined signals, such as the Nano SIM card 3.
  • the programming voltage/input signal (VPP) may not be transmitted, and the third gold finger 323 is set in the air.
  • the fifth spring piece 11e corresponding to the third gold finger 323 may not provide the programming voltage/input signal (VPP).
  • VPP programming voltage/input signal
  • the gold finger is suspended, that is, the gold finger is not used to transmit signals, and is not used to provide a signal port for the information card.
  • the present application provides a first NM card, which can be adapted to the above-mentioned card connector 11 , and the structure of the first NM card and the connection structure between the first NM card and the card connector 11 are illustrated below.
  • Figure 13 is a schematic block diagram of a first NM card 4 provided by an embodiment of the present application
  • Figure 14 is a schematic block diagram of the first NM card 4 shown in Figure 13 in some embodiments Structural schematic diagram
  • FIG. 15 is a structural schematic diagram when the first NM card 4 shown in FIG. 14 is connected to the card connector 11 shown in FIG. 5 .
  • the first NM card 4 includes a card body 41 and a card interface 42 .
  • the card body 41 includes a package 411 and a control circuit 412 and a storage circuit 413 disposed in the package 411 .
  • the card interface 42 is fixed on the card body 41 and exposed relative to the card body 41 .
  • the card interface 42 is electrically connected to the control circuit 412 .
  • the package 411 is used to package the control circuit 412 , the storage circuit 413 , and the electrical connection lines between the control circuit 412 and the storage circuit 413 and the card interface 42 for protection.
  • the package 411 is made of a dielectric material, and the dielectric material includes but not limited to ethylene-vinyl acetate (EVA), polyvinyl butyral (polyvinyl butyral, PVB), ionomer, polyolefins (polyolefins, PO), silicon, thermoplastic polyurethane and other materials.
  • EVA ethylene-vinyl acetate
  • PVB polyvinyl butyral
  • ionomer polyolefins
  • PO polyolefins
  • silicon thermoplastic polyurethane and other materials.
  • the size of the card body 41 of the first NM card 4 can be identical with the size of the card body 31 of the Nano SIM card 3.
  • the first NM card 4 has two vertical length directions, width directions and thickness directions, the maximum dimension of the card body 41 of the first NM card 4 in the length direction is its length, and the maximum dimension in the width direction is its width.
  • the largest dimension in the thickness direction is its thickness.
  • the dimensions of the card body 41 of the first NM card 4 may be 12.30 mm in length, 8.80 mm in width, and 0.67 mm in thickness.
  • the card interface 42 of the first NM card 4 in Fig. 14 is set up; the angle of view of the first NM card 4 in Fig. 15 is flipped up and down relative to the angle of view of the first NM card 4 in Fig. 14, Fig. 15
  • the card interface 42 of the first NM card 4 is set downward, and the card connector 11 is located below the first NM card 4 .
  • the card body 41 of the first NM card 4 includes a first side 4111, a second side 4112, a third side 4113 and a fourth side 4114, the first side 4111 and the third side 4113 are arranged opposite and along the first
  • the NM card 4 extends along the length direction, and the second side 4112 and the fourth side 4114 are oppositely arranged and extend along the width direction of the first NM card 4 .
  • the distance between the second side 4112 and the fourth side 4114 is larger than the distance between the first side 4111 and the third side 4113 .
  • the first side 4111 and the third side 4113 are long sides, and the second side 4112 and the fourth side 4114 are short sides.
  • the first side 4111 and the third side 4113 may be arranged parallel or approximately parallel
  • the second side 4112 and the fourth side 4114 may be arranged parallel or approximately parallel.
  • one corner of the card body 41 of the first NM card 4 is a cut corner, and the cut corner is arranged between the first side 4111 and the second side 4112 .
  • the cut corner forms a cut edge 4115, which forms an obtuse angle with the first side 4111, and forms an obtuse angle with the second side 4112.
  • a circular arc transition structure or Chamfer transition structure between adjacent sides (including the first side 4111, the second side 4112, the third side 4113, the fourth side 4114 and the cut side 4115) of the card body 41 of the first NM card 4, a circular arc transition structure or Chamfer transition structure.
  • the card body 41 of the first NM card 4 may not be provided with the aforementioned cut corners, which is not strictly limited in this application.
  • the size of the cut corner of the card body 41 of the first NM card 4 can be the same as or different from the size of the cut corner of the card body 31 of the Nano SIM card 3. When the two are different, it is also considered that the card body of the first NM card 4 The size of 41 is identical with the size of the card body 31 of Nano SIM card 3.
  • the card interface 42 of the first NM card 4 includes at least eight gold fingers, for example, may include a first gold finger 421, a second gold finger 422, a third gold finger 423, and a fourth gold finger 424 arranged in an array , the fifth gold finger 425 , the sixth gold finger 426 , the seventh gold finger 427 and the eighth gold finger 428 , the first gold finger 421 is closer to the cut edge 4115 of the card body 41 than the other gold fingers.
  • the first NM card 4 When the first NM card 4 is installed on the card tray 2, the first NM card 4 is inserted into the card holder assembly 10, and the first NM card 4 is connected to the card connector 11, the ten shrapnels of the card connector 11 are all against the first NM card 4.
  • the third elastic piece 11c to the tenth elastic piece 11j that is, the second row of elastic pieces to the fourth row of elastic pieces) of the card connector 11 abut against the first gold finger 421 to the first gold finger 421 of the first NM card 4 in one-to-one correspondence.
  • Eight gold fingers 428 are electrically connected to the first NM card 4 .
  • the card connector 11 arranges the third elastic piece 11c to the tenth elastic piece 11j in four rows and two rows, and the center distance between the fourth row of elastic pieces (11g, 11h) and the fifth row of elastic pieces (11i, 11j) , less than the center distance between the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f) and the center distance between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h), so that the card
  • the third elastic piece 11c to the eighth elastic piece 11h of the connector 11 can be electrically connected with the six golden fingers of the Nano SIM card 3 one by one, and the third elastic piece 11c to the tenth elastic piece 11j can also be connected to the first NM card 4 at the same time.
  • the eight golden fingers are electrically connected in one-to-one correspondence, so the card connector 11 can be compatible with the Nano SIM card 3 and the first NM card 4.
  • the spacing distance is also different, by adjusting the center distance between the second row of shrapnel (11c, 11d) and the third row of shrapnel (11e, 11f), and the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h)
  • the distance between the centers of the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j) is set within the range of 1.0mm to 1.7mm, so that the third The shrapnel 11c to the eighth shrapnel 11h can communicate with the six gold fingers of the Nano SIM card 3 respectively, and the third shrapnel 11c to the tenth sh
  • the seventh gold finger 427 and the eighth gold finger 428 of the first NM card 4 are in an "L" shape
  • the elastic piece of the card connector 11 contacts the information card through its abutting contact
  • a gap is formed between the rest of the shrapnel and the gold finger, so the ninth shrapnel 11i is electrically connected to the seventh gold finger 427, and there is no contact and no electrical connection between the seventh shrapnel 11g and the seventh gold finger 427
  • the tenth elastic piece 11j is electrically connected to the eighth gold finger 428 , and the eighth elastic piece 11h and the eighth gold finger 428 are not in contact and have no electrical connection.
  • the first row of shrapnel ( 11 a , 11 b ) of the card connector 11 bears against the first NM card 4 .
  • the first elastic piece 11a and the third elastic piece 11c are resisted and electrically connected to the first golden finger 421 of the first NM card 4, and the second elastic piece 11b and the fourth elastic piece 11d are opposed to and electrically connected to the first NM card 4 the second golden finger 422; in some other embodiments, the first row of elastic pieces (11a, 11b) abuts against the card body 41 of the first NM card 4, at this time, the first row of elastic pieces (11a, 11b) and the first There is no electrical connection between the NM cards 4 .
  • the embodiment of the present application does not strictly limit the specific connection structure between the first row of elastic sheets (11a, 11b) of the card connector 11 and the first NM card 4 .
  • the first NM card 4 may adopt an embedded multimedia memory card (embedded multi media card, EMMC) interface protocol.
  • EMMC embedded multimedia memory card
  • the eight gold fingers of the first NM card 4 four gold fingers can be used to transmit data signals (DATA0, DATA1, DATA2, DATA3), one gold finger is used to transmit a clock signal (CLK), and one gold finger is used to transmit
  • CMD command and response signal
  • one gold finger is used to transmit the ground signal (GND)
  • VCC power signal
  • data signals (DATA0, DATA1, DATA2, DATA3) are used to realize data transmission communication.
  • the command and response signal (CMD) can send a command from the external device to the memory card, or allow the memory card to respond to the command of the external device.
  • Table 2 is a table of correspondence between multiple shrapnels of the card connector 11, multiple gold fingers of the Nano SIM card 3 and the first NM card 4, and their transmission signals.
  • the third elastic piece 11c to the tenth elastic piece 11j of the card connector 11 resist and electrically connect the first gold finger 421 to the eighth golden finger 421 of the first NM card 4 in one-to-one correspondence.
  • Goldfinger 428 In this application, if the two gold fingers on the two information cards are abutted against and electrically connected to the same elastic piece when they are connected to the card connector 11 of the electronic device 100 , it is considered that the positions of the two gold fingers correspond.
  • the positions of the first gold finger 421 to the sixth gold finger 426 of the first NM card 4 are in one-to-one correspondence with the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 .
  • the shape and size of the two golden fingers and their specific positions on the card body of the information card may be the same or different, which is not strictly limited in this embodiment of the present application .
  • the first gold finger 421, the fourth gold finger 424, the seventh gold finger 427 and the eighth gold finger 428 of the first NM card 4 can be used to transmit data signals; for example, the first gold finger 421 is used to transmit The data signal (DATA1), the fourth gold finger 424 is used to transmit the data signal (DATA0), the seventh gold finger 427 is used to transmit the data signal (DATA3), the eighth gold finger 428 is used to transmit the data signal (DATA2), the first The signals transmitted in the gold finger 421 , the fourth gold finger 424 , the seventh gold finger 427 and the eighth gold finger 428 may be interchanged in some other embodiments, which will not be repeated here.
  • the second gold finger 422 of the first NM card 4 is used to transmit the clock signal (CLK)
  • the third gold finger 423 is used to transmit the command and response signal (CMD)
  • the fifth gold finger 425 is used to transmit the ground signal (GND)
  • the third gold finger 423 is used to transmit the ground signal (GND).
  • the six gold fingers 426 are used to transmit the power signal (VCC).
  • the eight golden fingers of the first NM card 4 may also have other correspondences with the above-mentioned eight-way signals, and the eight golden fingers of the first NM card 4 may also be used to transmit signals of other combinations.
  • the embodiment does not strictly limit it.
  • the first gold finger 421, the fourth gold finger 424, and the eighth gold finger 428 of the first NM card 4 can all be electrically connected to a high voltage circuit or a protection switch, so as to prevent the third elastic piece 11c to the fifth elastic piece 11e from And the circuit that burns out the first NM card 4 when the eighth shrapnel 11h provides high voltage.
  • the high voltage withstand circuit or the protection switch are located in the package 411 of the first NM card 4 . In some other embodiments, it may also be implemented by providing a high-impedance protection circuit in the electronic device, for example, adding a protection circuit in the interface controller.
  • the application also provides a second NM card, the second NM card is a memory card, by appropriately tailoring and adapting the high-speed protocol, the structure of the card interface is changed, so that the high-speed protocol can be applied to the second NM card, to improve
  • the transmission rate of the second NM card is such that the transmission rate of the second NM card is greater than the transmission rate of the first NM card.
  • the transmission rate of the first NM card is generally lower than 100MB/s.
  • the above-mentioned first NM card 4 can adopt the EMMC interface protocol, the card interface 42 has eight golden fingers, and the transmission rate of the first NM card 4 can reach 90MB/s.
  • the second NM card can adopt different interface protocols, and the card interface has ten or eight gold fingers or other numbers, so that the transmission rate is usually higher than 100MB/s, and can even reach 1GB/s.
  • the second NM card may adopt a universal flash storage (Universal Flash Storage, UFS) interface protocol, a high-speed peripheral component interconnect express (PCIe) interface protocol, a secure data (Secure Digital, SD) interface protocol, non- For interface protocols such as the Non-Volatile Memory Epress (NVMe) interface protocol, the transmission rate of the second NM card is generally in the range of 200MB/s to 800MB/s.
  • the second NM card may also use the EMMC interface protocol to increase the transmission rate by means of frequency conversion.
  • Figure 16 is a schematic block diagram of a second NM card 5 provided by an embodiment of the present application
  • Figure 17 is a schematic diagram of the second NM card 5 shown in Figure 16 in some embodiments Structural schematic diagram
  • FIG. 18 is a structural schematic diagram when the second NM card 5 shown in FIG. 17 is connected to the card connector 11 shown in FIG. 5 .
  • the second NM card 5 includes a card body 51 and a card interface 52 .
  • the card body 51 includes a package 511 and a control circuit 512 and a storage circuit 513 disposed in the package 511 .
  • the card interface 52 is fixed on the card body 51 and is exposed on one side of the card body 51 .
  • the card interface 52 is electrically connected to the control circuit 512 .
  • the package 511 is used to package the control circuit 512, the storage circuit 513, and the electrical connection lines between the control circuit 512, the storage circuit 513 and the card interface 52 for protection.
  • the package 511 is made of a dielectric material, and the dielectric material includes but not limited to ethylene-vinyl acetate (EVA), polyvinyl butyral (polyvinyl butyral, PVB), ionomer, polyolefin (polyolefins, PO), silicon, thermoplastic polyurethane and other materials.
  • EVA ethylene-vinyl acetate
  • PVB polyvinyl butyral
  • ionomer polyolefin (polyolefins, PO), silicon, thermoplastic polyurethane and other materials.
  • the size of the card body 51 of the second NM card 5 can be identical with the size of the card body 31 of the Nano SIM card 3.
  • the second NM card 5 has two vertical length directions, width directions and thickness directions, the maximum dimension of the card body 51 of the second NM card 5 in the length direction is its length, and the maximum dimension in the width direction is its width.
  • the largest dimension in the thickness direction is its thickness.
  • the dimensions of the card body 51 of the second NM card 5 may be 12.30 mm in length, 8.80 mm in width, and 0.67 mm in thickness.
  • the card interface 52 of the second NM card 5 in Fig. 17 is set up;
  • the angle of view of the second NM card 5 in Fig. 18 is flipped up and down relative to the angle of view of the second NM card 5 in Fig. 17, Fig. 18
  • the card interface 52 of the second NM card 5 in the middle is arranged downward, and the card connector 11 is positioned at the second NM card 5 below.
  • the card body 51 of the second NM card 5 includes a first side 5111, a second side 5112, a third side 5113 and a fourth side 5114, and the first side 5111 and the third side 5113 are arranged opposite and along the second side.
  • the NM card 5 extends along the length direction, and the second side 5112 and the fourth side 5114 are oppositely arranged and extend along the width direction of the second NM card 5 .
  • the distance between the second side 5112 and the fourth side 5114 is greater than the distance between the first side 5111 and the third side 5113.
  • the first side 5111 and the third side 5113 are long sides, and the second side 5112 and the fourth side 5114 are short sides.
  • the first side 5111 and the third side 5113 may be arranged parallel or approximately parallel
  • the second side 5112 and the fourth side 5114 may be arranged parallel or approximately parallel.
  • one corner of the card body 51 of the second NM card 5 is a cut corner, and the cut corner is arranged between the first side 5111 and the second side 5112 .
  • the cut corner forms a cut edge 5115 which forms an obtuse angle with the first side 5111 and forms an obtuse angle with the second side 5112 .
  • a circular arc transition structure or a chamfer transition structure may be provided between adjacent sides of the card body 51 (including the first side 5111 , the second side 5112 , the third side 5113 , the fourth side 5114 and the trimming side 5115 ).
  • the card body 51 of the second NM card 5 may not be provided with the above-mentioned cut corners, which is not strictly limited in the present application.
  • the size of the cut corner of the card body 51 of the second NM card 5 can be the same as or different from the size of the cut corner of the card body 31 of the Nano SIM card 3.
  • the card body of the second NM card 5 The size of 51 is identical with the size of the card body 31 of Nano SIM card 3.
  • the card interface 52 of the second NM card 5 includes a plurality of golden fingers, and the plurality of golden fingers are exposed on the same side of the card body 51 .
  • the number of gold fingers of the second NM card 5 is at least ten, and a plurality of gold fingers may include, for example, a first gold finger 521, a second gold finger 522, a third gold finger 523, a fourth gold finger 524, and a fifth gold finger 525.
  • the first gold finger 521, the third gold finger 523, the fifth gold finger 525, the seventh gold finger 527 and the ninth gold finger 529 of the second NM card 5 are arranged in the first row of gold fingers along the width direction of the second NM card 5
  • the second gold finger 522, the fourth gold finger 524, the sixth gold finger 526, the eighth gold finger 528 and the tenth gold finger 5210 are arranged in the second row of gold fingers along the width direction of the second NM card 5, and the first row
  • the gold fingers and the second row of gold fingers are arranged in the length direction of the second NM card 5, and the five gold fingers of the first row of gold fingers (521, 523, 525, 527, 529) are connected with the second row of gold fingers (522, 529).
  • the first golden fingers 321 to the tenth golden fingers 5210 are arranged in two rows and five rows.
  • the first row of gold fingers (521, 523, 525, 527, 529) is located between the second side 5112 and the second row of gold fingers (522, 524, 526, 528, 5210), that is, the first row of gold fingers
  • the fingers (521, 523, 525, 527, 529) are arranged close to the second side 5112, and the second row of golden fingers (522, 524, 526, 528, 5210) are arranged close to the fourth side 5114.
  • the first gold finger 521 is located between the first side 5111 and the third gold finger 523
  • the second gold finger 522 is located between the first side 5111 and the fourth gold finger 514 . That is, the first row of gold fingers (521, 522) is arranged close to the first side 5111, and the fifth row of gold fingers (529, 5210) is arranged close to the third side 5113.
  • the first gold finger 521 can be provided with a hypotenuse, forming a right-angled trapezoid, the hypotenuse of the first gold finger 521 is set facing the cut edge 5115 of the card body 51, and the distance between the two is greater than or equal to 0.1mm, for example, it can be 0.2 mm; the second gold finger 522 to the tenth gold finger 5210 may be rectangular. In some other embodiments, the first golden finger 521 may also be rectangular.
  • the distance between the centers of the second row of gold fingers (523, 524) and the third row of gold fingers (525, 526) is greater than the center distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524)
  • the spacing is greater than the center spacing between the fourth row of gold fingers (527, 528) and the fifth row of gold fingers (529, 5210).
  • the center distance between the third row of gold fingers (525, 526) and the fourth row of gold fingers (527, 528) is greater than the center distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524) , and greater than the center distance between the fourth row of gold fingers (527, 528) and the fifth row of gold fingers (529, 5210).
  • the width direction of the second NM card 5 was parallel to the first direction of the card connector 11, and the length direction was parallel to the second direction of the card connector 11.
  • Ten shrapnels all support the second NM card 5 .
  • the second NM card 5 is installed on the card tray 2, the second NM card 5 is inserted into the card holder assembly 10, and the second NM card 5 is connected to the card connector 11, the ten shrapnels of the card connector 11 will abut one by one.
  • the first elastic piece 11a to the tenth elastic piece 11j are pressed against the first gold finger 521 to the tenth gold finger 5210 of the second NM card 5 in one-to-one correspondence.
  • the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 are arranged in two rows and five rows, and the center of the second row of elastic pieces (11c, 11d) and the third row of elastic pieces (11e, 11f) spacing and the center distance between the third row of shrapnel (11e, 11f) and the fourth row of shrapnel (11g, 11h) are greater than the center distance and The distance between the centers of the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j) enables the third shrapnel 11c to the eighth shrapnel 11h of the card connector 11 to resist and electrically connect the Nano SIM in one-to-one correspondence.
  • the first gold finger 321 to the sixth gold finger 326 of the card 3, and the third elastic piece 11c to the tenth elastic piece 11j of the card connector 11 can resist and electrically connect the first gold finger 421 of the first NM card 4 in one-to-one correspondence.
  • the eighth golden finger 428 the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 are resisted and electrically connected to the first golden finger 521 to the tenth golden finger 5210 of the second NM card 5 in one-to-one correspondence, so the card
  • the connector 11 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5.
  • the card connector 11 can also be designed to be compatible with the Nano SIM card 3 and the second NM card 5.
  • the distance between the centers of the second row of elastic sheets (11c, 11d) and the third row of elastic sheets (11e, 11f) of the card connector 11 and the third row of elastic sheets (11e, 11f) and the fourth row of shrapnel (11g, 11h) center spacing is set in the range of 1.5mm to 2.8mm
  • the spacing is set in the range of 1.0mm to 1.7mm
  • the center distance between the fourth row of shrapnel (11g, 11h) and the fifth row of shrapnel (11i, 11j) is set in the range of 1.0mm to 1.7mm, so that the third row of shrapnel 11c
  • the eighth shrapnel 11h can communicate with the six gold fingers of the Nano SIM card 3 respectively, the third shrapn
  • the gold fingers Due to the different numbers and shapes of gold fingers of Nano SIM card 3, the first NM card 4, and the second NM card 5, the gold fingers are arranged in different positions and the distance between gold fingers is also different.
  • the unique design of the spacing from the first shrapnel 11a to the tenth shrapnel 11j enables the card connector 11 to be compatible with the Nano SIM card 3, the first NM card 4, and the second NM card 5, and effectively reduce the setting of the Nano SIM card 3.
  • the card connector 11 Due to the risk of a short circuit between the gold finger of the Nano SIM card 3 and the shrapnel of the card connector 11 due to the card connector 11, when the first NM card 4 is set on the card connector 11, the gold finger of the first NM card 4 and the card connector 11 shrapnel short-circuit risk, and when the second NM card 5 is set on the card connector 11, the gold finger of the second NM card 5 and the shrapnel of the card connector 11 short-circuit risk, so that the card connector 11 and the Nano SIM
  • the electrical connection relationship between the card 3, the first NM card 4 and the second NM card 5 is reliable, so that the Nano SIM card 3, the first NM card 4 and the second NM card 5 can share the same card connector 11 in time-sharing. It can be understood that, in some other embodiments, the card connector 11 can also be designed as a solution that is compatible with the Nano SIM card 3 and the second NM card 5.
  • FIG. 19 is a schematic block diagram of some embodiments of some circuits of the electronic device 100 shown in FIG. 1 .
  • the processor 20 of the electronic device 100 includes an interface controller 201 , one or more memory card controllers 202 and a SIM card controller 203 .
  • the interface controller 201 is electrically connected to one or more memory card controllers 202 and the SIM card controller 203 , and the interface controller 201 is also electrically connected to multiple elastic pieces of the card connector 11 .
  • the memory card controller 202 is used to control the operation of the memory card
  • the SIM card controller 203 is used to control the operation of the Nano SIM card 3.
  • the interface controller 201 can control the memory card controller 202 or the SIM card controller 203 to communicate with the information card via the card connector 11 .
  • the interface controller 201 controls the SIM card controller 203 to communicate with the Nano SIM card 3 through the card connector 11; 2 The second NM card 5 is installed, and when the second NM card 5 is inserted into the card holder assembly 10, the interface controller 201 controls the memory card controller 202 to communicate with the second NM card 5 through the card connector 11.
  • the electronic device 100 can automatically identify the type of the information card through the processor 20, and control the controller corresponding to the information card to conduct with the card connector 11, so that the information card can be automatically matched with the electronic device 100, thereby To communicate and improve the user experience.
  • the multiple controllers of the processor 20 may be independent components, or may be combined through integrated components, or one controller may be split into multiple components, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 may include multiple switches, and may also include wires, and the multiple switches may be arranged separately or collectively, which is not strictly limited in this embodiment of the present application.
  • the processor 20 can identify the type of the information card connected to the card connector 11 in various ways.
  • the processor 20 may sequentially connect multiple controllers to the card connector 11, and identify the type of the information card according to the matching between the controller and the information card.
  • the processor 20 may also be provided with a detection circuit for detecting the type of the information card, and the processor 20 can identify the type of the information card according to the detection result of the detection circuit.
  • the embodiment of the present application does not strictly limit the specific manner in which the processor 20 identifies the type of the information card.
  • the memory card controller 202 may include a first memory card controller and a second memory card controller
  • the first memory card controller is used to control the operation of the first NM card 4
  • the second memory card controller is used to control the operation of the second NM card 5.
  • the interface controller 201 controls the first memory card controller to communicate with the first NM card 4 via the card connector 11 .
  • the interface controller 201 controls the second memory card controller to communicate with the second NM card 5 via the card connector 11 .
  • the card interface of the second NM card 5 can be implemented in various ways, and the following examples are used for illustration.
  • the second NM card 5 in the following embodiments can all be connected to the card connector 11 shown in FIG. 5 .
  • the ten gold fingers of the second NM card 5 are arranged in two rows and five rows, and the ten gold fingers of the second NM card 5 are arranged in the width direction into the first row of gold fingers (521, 522) to the second row.
  • Five rows of gold fingers (529, 5210), the ten gold fingers of the second NM card 5 are arranged along the length direction into the first row of gold fingers (521, 523, 525, 527, 529) and the second row of gold fingers (522 , 524, 526, 528, 5210).
  • the distance between the centers of the second row of gold fingers (523, 524) and the third row of gold fingers (525, 526) and the distance between the third row of gold fingers (525, 526) and the fourth row of gold fingers (527, 528) which is greater than the center distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524), and greater than the center distance between the fourth row of gold fingers (527, 528) and the fifth row of gold fingers ( 529, 5210) center spacing.
  • the distance between the centers of the second row of gold fingers (523, 524) and the third row of gold fingers (525, 526) can be in the range of 1.5 mm to 2.8 mm
  • the distance between the third row of gold fingers (525, 526) and the fourth row The center-to-center spacing of the gold fingers (527, 528) in the row can be in the range of 1.5 mm to 2.8 mm
  • the center-to-center spacing between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524) can be 1.0 mm
  • the distance between the centers of the fourth row of gold fingers (527, 528) and the fifth row of gold fingers (529, 5210) may be within the range of 1.0mm to 1.7mm.
  • FIG. 20 is a dimension diagram of the second NM card 5 shown in FIG. 17 in some embodiments.
  • the ten golden fingers of the second NM card 5 are arranged in two rows and five rows, the first row of golden fingers (521, 523, 525, 527, 529) is arranged near the second side 5112, and the second row Gold fingers (522, 524, 526, 528, 5210) are arranged close to the fourth side 5114, each column of gold fingers is aligned in the width direction, and the first row of gold fingers (521, 522) is arranged close to the first side 5111 , the fifth row of gold fingers (529, 5210) is arranged close to the third side 5113, and each row of gold fingers is aligned in the length direction.
  • the first gold finger 521 can be provided with a hypotenuse, forming a right-angled trapezoid, and the hypotenuse of the first gold finger 521 is set facing the trimming edge 5115 of the card body 51, and the distance between the two can be 0.2mm; the second gold finger 522 to the tenth gold finger 5210 may be rectangular.
  • the distance between the center of the second row of gold fingers (523, 524) and the first side 5111 may be 1.95mm, and the distance between the center of the third row of gold fingers (525, 526) and the first side 5111
  • the distance between the center of the third row of gold fingers (525, 526) and the third side 5113 can be 4.55 mm, and the distance between the center of the fourth row of gold fingers (527, 528) and the third side 5113 Can be 1.95mm.
  • the distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524) can be 0.25mm, and the distance between the first row of gold fingers (521, 522) and the first side 5111
  • the spacing can be 0.2mm.
  • the distance between the fourth row of gold fingers (527, 528) and the fifth row of gold fingers (529, 5210) can be 0.25mm, and the distance between the fifth row of gold fingers (529, 5210) and the third side 5113 The spacing can be 0.2mm.
  • the distance between the first row of gold fingers (521, 523, 525, 527, 529) and the second side 5112 can be 1.1mm, and the distance between the second row of gold fingers (522, 524, 526, 528, 5210 ) and the fourth side 5114 may be 1.1mm.
  • each golden finger may be 3.2 mm, and the width may be 1.0 mm.
  • the length of the first gold finger 521 is the size of its base, and the width of the first gold finger 521 is the size of its height.
  • the tolerance of the above-mentioned shape dimension and spacing dimension is ⁇ 0.1 mm.
  • FIG. 21A is a dimensional drawing of the second NM card 5 shown in FIG. 16 in other embodiments
  • FIG. 21B is another dimensional drawing of the second NM card 5 shown in FIG. 21A .
  • the ten golden fingers of the second NM card 5 are arranged in two rows, the first row of golden fingers (521, 523, 525, 527, 529) is arranged near the second side 5112, and the second row of golden fingers (522, 524, 526, 528, 5210) are arranged near the fourth side 5114.
  • the first gold fingers 521 to the sixth gold fingers 526 are arranged in two rows and three rows, each row of gold fingers is aligned in the width direction, and the first row of gold fingers (521, 522) is arranged close to the first side 5111 , each row of gold fingers are aligned in the length direction.
  • the fourth row of gold fingers (527, 528) is aligned in the length direction.
  • the first gold finger 521 can be provided with a hypotenuse, forming a right-angled trapezoid, and the hypotenuse of the first gold finger 521 is set facing the trimming edge 5115 of the card body 51, and the distance between the two can be 0.2mm; the second gold finger 522 to eighth golden fingers 528 may be rectangular.
  • the ninth gold finger 529 and the tenth gold finger 5210 may be L-shaped.
  • the ninth golden finger 529 half surrounds the seventh golden finger 527 .
  • the ninth golden finger 529 includes a first part 5291 and a second part, the first part 5291 extends along the length direction, and the second part 5292 extends along the width direction.
  • the first part 5291 of the ninth gold finger 529 is located between the seventh gold finger 527 and the third side 5113, and the second part 5292 of the ninth gold finger 529 is connected to the first part 5291 and is located between the seventh gold finger 527 and the second side 5112 between.
  • the tenth gold finger 5210 includes a first part 52101 and a second part 52102, the first part 52101 extends along the length direction, and the second part 52102 extends along the width direction.
  • the first part 52101 of the tenth gold finger 5210 is located between the eighth gold finger 528 and the third side 5113, and the second part 52102 of the tenth gold finger 5210 is connected to the first part 5291 and is located between the eighth gold finger 528 and the second side 5112 between.
  • the ninth gold finger 529 and the tenth gold finger 5210 can be understood as the fifth row of gold fingers (529, 5210).
  • the distance between the center of the second row of gold fingers (523, 524) and the first side 5111 may be 1.95mm, and the distance between the center of the third row of gold fingers (525, 526) and the first side 5111
  • the distance between the center of the third row of gold fingers (525, 526) and the third side 5113 can be 4.55 mm, and the distance between the center of the fourth row of gold fingers (527, 528) and the third side 5113 Can be 1.95mm.
  • the distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524) can be 0.25mm, and the distance between the first row of gold fingers (521, 522) and the first side 5111
  • the spacing can be 0.2mm.
  • the distance between the fourth row of gold fingers (527, 528) and the fifth row of gold fingers (529, 5210) can be 0.25mm, and the distance between the fifth row of gold fingers (529, 5210) and the third side 5113
  • the spacing can be 0.2mm. That is, in the width direction, the distance between the ninth gold finger 529 and the third side 5113 can be 0.2 mm, the distance between the first part 5291 of the ninth gold finger 529 and the seventh gold finger 527 can be 0.25 mm; The distance between the finger 5210 and the third side 5113 may be 0.2 mm, and the distance between the first part 52101 of the tenth gold finger 5210 and the eighth gold finger 528 may be 0.25 mm.
  • the top side of the second part 5292 of the ninth gold finger 529 close to the first side 5111 can be flush with the top side of the seventh gold finger 527 close to the first side 5111; the second part 52102 of the tenth gold finger 5210
  • the top side of the eighth gold finger 528 close to the first side 5111 may be flush with the top side of the eighth gold finger 528 close to the first side 5111 .
  • the width of the first part 5291 of the first gold finger 521 to the eighth gold finger 528 and the ninth gold finger 529 and the first part 52101 of the tenth gold finger 5210 can be 1.0 mm.
  • the distance between the first gold finger 521, the third gold finger 523 and the fifth gold finger 525 and the second side 5112 may be 1.1mm
  • the distance between the second gold finger 522, the fourth gold finger 524 and the The distance between the six gold fingers 526 and the fourth side 5114 may be 1.1 mm.
  • the side of the seventh gold finger 527 close to the fourth side 5114 and the side of the first part 5291 of the ninth gold finger 529 close to the fourth side 5114 can be close to the fifth gold finger 525.
  • the sides of the four sides 5114 are flush; the distance between the seventh gold finger 527 and the second part 5292 of the ninth gold finger 529 can be 0.2 mm, and the distance between the ninth gold finger 529 and the second side 5112 can be 0.5 mm; The width of the second portion 5292 of the nine golden fingers 529 may be 0.9 mm.
  • the side of the eighth gold finger 528 close to the second side 5112 and the side of the first part 52101 of the tenth gold finger 5210 close to the second side 5112 can be close to the sixth gold finger 526
  • the sides of the second side 5112 are flush; the distance between the eighth gold finger 528 and the second part 52102 of the tenth gold finger 5210 may be 0.2 mm, and the distance between the tenth gold finger 5210 and the fourth side 5114 may be 0.5 mm;
  • the width of the second portion 52102 of the tenth gold finger 5210 may be 0.9mm.
  • the tolerance of the above-mentioned shape dimension and spacing dimension is ⁇ 0.1 mm.
  • FIG. 22 is a dimension diagram of the second NM card 5 shown in FIG. 16 in other embodiments.
  • the first golden fingers 521 to the tenth golden fingers 5210 of the second NM card 5 are arranged in two rows and five rows, and the first row of golden fingers (521, 523, 525, 527, 529) is close to the second side 5112 arrangement, the second row of gold fingers (522, 524, 526, 528, 5210) is arranged near the fourth side 5114; the first row of gold fingers (521, 522) is arranged near the first side 5111, and the fifth row of gold fingers The fingers (529, 5210) are arranged close to the third side 5113, and each row of golden fingers is aligned in the length direction.
  • the second NM card 5 also includes an eleventh gold finger 5220 and a twelfth gold finger 5230, and the eleventh gold finger 5220 and the twelfth gold finger 5230 are arranged in the fourth row of gold fingers (527, 528, 5220, 5230 ), the eleventh gold finger 5220 is located between the second side 5112 and the seventh gold finger 527 , and the twelfth gold finger 5230 is located between the fourth side 5114 and the eighth gold finger 528 .
  • the first gold finger 521 can be provided with a hypotenuse, forming a right-angled trapezoid, and the hypotenuse of the first gold finger 521 is set facing the trimming edge 5115 of the card body 51, and the distance between the two can be 0.2mm; the second gold finger 522 to the twelfth gold finger 5230 may be rectangular.
  • the distance between the center of the second row of gold fingers (523, 524) and the first side 5111 may be 1.95mm, and the distance between the center of the third row of gold fingers (525, 526) and the first side 5111
  • the distance between the center of the third row of gold fingers (525, 526) and the third side 5113 can be 4.55mm, and the distance between the center of the fourth row of gold fingers (527, 528, 5220, 5230) and the third side 5113 can be 4.25mm.
  • the spacing of sides 5113 may be 1.95 mm.
  • the distance between the first row of gold fingers (521, 522) and the second row of gold fingers (523, 524) can be 0.25mm, and the distance between the first row of gold fingers (521, 522) and the first side 5111 The spacing can be 0.2mm.
  • the distance between the fourth row of gold fingers (527, 528, 5220, 5230) and the fifth row of gold fingers (529, 5210) can be 0.25mm, and the distance between the fifth row of gold fingers (529, 5210) and The distance between the third sides 5113 may be 0.2 mm.
  • the widths of the first gold finger 521 to the twelfth gold finger 5230 can be 1.0 mm.
  • the distance between the first gold finger 521, the third gold finger 523 and the fifth gold finger 525 and the second side 5112 may be 1.1mm
  • the distance between the second gold finger 522, the fourth gold finger 524 and the The distance between the six gold fingers 526 and the fourth side 5114 may be 1.1 mm.
  • the side of the seventh gold finger 527 close to the fourth side 5114 and the side of the ninth gold finger 529 close to the fourth side 5114 can be compared with the side of the fifth gold finger 525 close to the fourth side 5114
  • the sides are flush; the side of the eleventh gold finger 5220 close to the second side 5112 is flush with the side of the ninth gold finger 529 close to the second side 5112; the seventh gold finger 527 and the eleventh gold finger 5220
  • the distance between the eleventh gold finger 5220 and the second side 5112 may be 0.5 mm, and the length of the eleventh gold finger 5220 may be 0.9 mm.
  • the side of the eighth gold finger 528 close to the second side 5112 and the side of the tenth gold finger 5210 close to the second side 5112 can be close to the second side 5112 of the sixth gold finger 526 the side of the twelfth gold finger 5230 close to the fourth side 5114 is flush with the side of the tenth gold finger 5210 close to the fourth side 5114; the eighth gold finger 528 is aligned with the twelfth gold finger
  • the distance between 5230 may be 0.2 mm
  • the distance between the twelfth gold finger 5230 and the fourth side 5114 may be 0.5 mm
  • the length of the twelfth gold finger 5230 may be 0.9 mm.
  • the tolerance of the above-mentioned shape dimension and spacing dimension is ⁇ 0.1mm.
  • FIG. 23 is a dimension diagram of the second NM card 5 shown in FIG. 16 in other embodiments.
  • the first golden fingers 521 to the tenth golden fingers 5210 of the second NM card 5 are arranged in two rows and five rows, and the first row of golden fingers (521, 523, 525, 527, 529) is close to the second side 5112 arrangement, the second row of gold fingers (522, 524, 526, 528, 5210) is arranged close to the fourth side 5114, and each row of gold fingers is aligned in the width direction; the first row of gold fingers (521, 522) Arranged close to the first side 5111, the fifth row of gold fingers (529, 5210) is arranged close to the third side 5113, and each row of gold fingers is aligned in the length direction.
  • the first gold finger 521 to the tenth gold finger 5210 can all be rectangular.
  • the first gold finger 521 may be closer to the cut edge 5115 of the card body 51 than other gold fingers.
  • the distance between the center of the second row of gold fingers (523, 524) and the first side 5111 may be 1.86mm, and the distance between the center of the third row of gold fingers (525, 526) and the first side 5111
  • the distance between the center of the third row of gold fingers (525, 526) and the third side 5113 can be 4.4 mm, and the distance between the center of the fourth row of gold fingers (527, 528) and the third side 5113 Can be 1.86mm.
  • the distance between the first row of gold fingers (521, 522) and the first side 5111 may be 0.2 mm, and the distance between the fifth row of gold fingers (529, 5210) and the third side 5113 may be 0.2 mm.
  • the distance between the center of the first row of gold fingers (521, 523, 525, 527, 529) and the second side 5112 may be 2.68 mm
  • the second row of gold fingers (522, 524, 526 , 528, 5210) and the distance between the center of the fourth side 5114 may be 2.0 mm
  • the length of the card body 51 of the second NM card 5 may be 12.3mm.
  • the tolerance of the above-mentioned shape dimension and spacing dimension is ⁇ 0.1mm.
  • the structural dimensions of the second NM card 5 shown in Figures 20 to 23 are partial examples of the second NM card 5, and the card interface 52 of the second NM card 5 can also have more gold finger arrangements
  • the card interface 52 of the second NM card 5 only needs to include at least the first gold finger 521 to the tenth gold finger 5210 , which is not strictly limited in this embodiment of the present application.
  • the UFS interface protocol, the PCIe interface protocol and the SD interface protocol can all be applied to the second NM card with the first gold finger to the tenth gold finger, such as the second NM card 5 shown in Figure 17, Figure 20 to Figure 23
  • the following embodiments are illustrated by taking the second NM card 5 with the card interface 52 shown in FIG. 17 as an example.
  • the UFS protocol is a standard developed by the Joint Electron Device Engineering Council (JEDEC) Association to define the electrical interface of UFS universal flash memory and UFS storage devices.
  • JEDEC Joint Electron Device Engineering Council
  • UFS defines a complete protocol stack, which is the application layer, transport layer and interconnection layer from top to bottom.
  • UFS defines a unique UFS feature set, and uses the eMMC standard feature set as a subset, using the UniPro (interface) of the MIPI (Mobile Industry Processor Interface, Mobile Industry Processor Interface) Alliance as the data link layer and MIPI
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor Interface
  • MIPI Mobile Industry Processor
  • the UFS protocol released version 1.0 in 2011, and then released versions 1.1, 2.0, 2.1, and 3.0 in 2012, 2013, 2016, and 2018. Each version update is accompanied by an increase in speed.
  • the UFS protocol is a connection after version 4.5 of the eMMC protocol.
  • the main improvement of the UFS protocol lies in the transmission layer.
  • the UFS protocol uses differential serial transmission, which supports simultaneous reading and writing of data.
  • eMMC is parallel Data transmission, so compared with the previous generation protocol standard eMMC, the UFS protocol has the characteristics of fast speed and low power consumption. Therefore, the UFS protocol has the characteristics of fast speed and low power consumption, and is suitable for electronic devices such as mobile phones.
  • the second NM card 5 includes at least ten gold fingers, for example including the first gold finger 521 to the tenth gold finger 5210 .
  • the first gold finger 521 to the tenth gold finger 5210 four gold fingers are used to transmit data signals (RX+, RX-, TX+, TX-), and one gold finger is used to transmit a reference clock signal (RCLK, which can also be named REF_CLK), one gold finger is used to transmit the first power signal (VCC), one gold finger is used to transmit the ground signal (VSS), and one gold finger is used to transmit the second power signal (VCCQ).
  • the second NM card 5 can support the UFS protocol and realize the basic performance of the high-speed card.
  • the data signal (RX+) and the data signal (RX-) are input differential signals; the data signal (TX+) and the data signal (TX-) signals are output differential signals; the first power signal (VCC) is responsible for the second NM card 5
  • the power supply of the flash memory particle that is, the storage circuit 513; the second power signal (VCCQ) is responsible for the power supply of the control circuit 512 of the second NM card 5.
  • the second power signal (VCCQ) may also be responsible for the power supply of the M-PHY interface of the second NM card 5, the input and output of the flash memory and other internal low voltage circuits.
  • the voltage of the first power signal may be in the range of 1.7V to 1.95V, or in the range of 2.7V to 3.6V.
  • the voltage of the second power signal may be in the range of 1.1V to 1.3V.
  • the remaining two gold fingers can be set in the air; or, one of the remaining two gold fingers is set in the air, and the other gold finger is used for Transmission detection signal (C/D); or, one of the remaining two gold fingers is used to transmit detection signal (C/D), and the other gold finger is used to transmit other signals; or, the remaining two gold fingers Both fingers are used to transmit detection signals (C/D).
  • the detection signal (C/D) can be a special data signal.
  • the electronic device can use the detection signal (C/D) to identify whether the inserted information card is The second NM card 5; in some embodiments, the electronic device can also identify the version of the inserted second NM card 5 through the detection signal (C/D), or identify the interface protocol of the inserted second NM card 5.
  • the second NM card 5 transmits the detection signal (C/D) through at least one of the golden fingers, which can reduce the difficulty for the electronic device to identify the second NM card 5 .
  • the first gold finger 521 to the tenth gold finger 5210 one or two of the remaining two gold fingers may also be used to transmit other signals.
  • the following illustrates the first signal arrangement mode of the second NM card 5 using the UFS interface protocol as an example.
  • FIG. 24 is a schematic diagram of the second NM card 5 shown in FIG. 17 in some embodiments.
  • the first gold finger 521 , the third gold finger 523 , the ninth gold finger 529 and the tenth gold finger 5210 of the second NM card 5 are used to transmit data signals (RX+, RX-, TX+, TX-).
  • the first gold finger 521 is used to transmit data signals (RX+)
  • the third gold finger 523 is used to transmit data signals (RX-)
  • the ninth gold finger 529 is used to transmit data signals (TX+)
  • the finger 5210 is used to transmit a data signal (TX-), which is described as an example.
  • the data signals transmitted by the first gold finger 521 , the third gold finger 523 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other.
  • the data signals transmitted by the first gold finger 521 and the third gold finger 523 are exchanged, and the data signals transmitted by the ninth gold finger 529 and the tenth gold finger 5210 are exchanged.
  • Other embodiments will not be repeated here.
  • the second gold finger 522 is used to transmit the second power signal (VCCQ); the fourth gold finger 524 is used to transmit the reference clock signal (RCLK); the seventh gold finger 527 is used to transmit the ground signal (VSS); the eighth gold finger 527 is used to transmit the ground signal (VSS); Finger 528 is used to transmit the first power signal (VCC).
  • the fifth gold finger 525 can be used to transmit the detection signal (C/D).
  • the sixth golden finger 526 is suspended in the air.
  • table 3 is a plurality of shrapnels of the card connector 11 and a plurality of golden fingers of the Nano SIM card 3, the first NM card 4 and the second NM card 5 and the correspondence table 1 of the transmission signals thereof.
  • the first elastic pieces 11a to the tenth elastic pieces 11j of the card connector 11 resist and electrically connect the first golden fingers 521 to the tenth golden fingers 521 of the second NM card 5 in one-to-one correspondence.
  • the gold finger 5210, the third gold finger 523 to the eighth gold finger 528 of the second NM card 5 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the third gold finger 523 to the tenth gold finger 5210 of the second NM card 5 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the second NM card 5 arranges the second power signal (VCCQ) required by the UFS protocol on the second gold finger 522, because the second gold finger 522 of the second NM card 5 and the Nano SIM card 3 There is no position correspondence with all gold fingers of the first NM card 4, and the second gold finger 522 of the second NM card 5 does not need to be the same shrapnel as the multiplex card connector 11 of the Nano SIM card 3 and the first NM card 4, Avoid the second power signal (VCCQ) sharing the same shrapnel with the data signals of the Nano SIM card 3 and the first NM card 4, so as to reduce the time when the Nano SIM card 3 and the first NM card 4 are inserted into the electronic device 100 and connected to the card connector 11.
  • VCCQ the second power signal
  • the risk of being burned by the second power supply signal (VCCQ), the reliability of the electronic device 100 being compatible with the Nano SIM card 3 and the first NM card 4 and the second NM card 5 is relatively high.
  • the first NM card 4 and the Nano SIM card 3 do not need to deploy a high-voltage resistant design for preventing the circuit from being burned by the second power signal (VCCQ), which can reduce costs.
  • the second NM card 5 arranges one of the high-speed data signals (such as RX+) on the first gold finger 521, because the first gold finger 521 of the second NM card 5 is connected with the Nano SIM card 3 and all of the first NM card 4 Gold fingers have no position correspondence, so the first shrapnel 11a is connected to the high-speed data interface of the processor 20 of the electronic device 100 without connecting to the low-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or Nano SIM
  • the card 3 is still the first NM card 4, and the processor 20 does not need to switch the interface electrically connected to the first shrapnel 11a, thereby reducing the difficulty of switching between the high-speed data interface and the low-speed data interface, simplifying the circuit of the processor 20, reducing design difficulty and cost.
  • the seventh gold finger 527 of the second NM card 5 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4, when the electronic device 100 is inserted, it is consistent with the position of the card.
  • the seventh elastic piece 11g of the connector 11 is resisted and electrically connected, the seventh gold finger 527 of the second NM card 5, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for transmission ground signal (respectively VSS/GND/GND), so the processor 20 of the electronic device 100 can be electrically connected to the seventh elastic piece 11g of the card connector 11 through the same ground interface, no matter the information card inserted in the electronic device 100 is the second The NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the seventh shrapnel 11g, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • VSS/GND/GND transmission ground signal
  • the eighth gold finger 528 of the second NM card 5 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the eighth spring piece 11h of the device 11 is resisted and electrically connected, and the eighth gold finger 528 of the second NM card 5, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used for Transmission power signal (respectively VCC/VCC/VCC), so the processor 20 of the electronic device 100 can be electrically connected to the eighth shrapnel 11h of the card connector 11 through the same power interface, no matter the information card inserted in the electronic device 100 is the first For the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the eighth shrapnel 11h, thereby simplifying the circuit of the processor 20 and reducing design difficulty and
  • the fourth gold finger 524 of the second NM card 5 corresponds to the position of the second gold finger 322 of the Nano SIM card 3, corresponds to the position of the second gold finger 422 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the fourth elastic piece 11d of the device 11 is resisted and electrically connected, the fourth gold finger 524 of the second NM card 5 is used to transmit the reference clock signal (RCLK), and the second gold finger 322 of the Nano SIM card 3 is used to transmit the clock signal ( CLK), the second gold finger 422 of the first NM card 4 is used to transmit the clock signal (CLK), and the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fourth shrapnel 11d.
  • the processor 20 can provide clock signals of different frequencies through the fourth elastic piece 11d without switching data interface signals, thereby simplifying the circuit of the processor 20 and reducing design complexity and cost.
  • the processor 20 can provide the same clock signal for the three cards, and no longer need Switching further simplifies the design difficulty of the processor 20, for example, a unified clock frequency of 20MHz.
  • the third gold finger 523 of the second NM card 5 corresponds to the position of the first gold finger 321 of the Nano SIM card 3, corresponds to the position of the first gold finger 421 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the third elastic piece 11c of the device 11 is resisted and electrically connected, the third gold finger 523 of the second NM card 5 is used to transmit data signals (such as RX-), and the first gold finger 321 of the Nano SIM card 3 is used for data signals ( DATA), the first gold finger 421 of the first NM card 4 is used to transmit data signals (such as DATA1), and the second NM card 5, Nano SIM card 3 and the first NM card can time-division multiplex the third elastic piece 11c.
  • the fifth gold finger 525 of the second NM card 5 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is all connected to the card connector when inserted into the electronic device 100.
  • the fifth elastic piece 11e of 11 is resisted and electrically connected, the fifth gold finger 525 of the second NM card 5 is used to transmit the detection signal (C/D), and the third gold finger 323 of the Nano SIM card 3 is used to transmit the programming voltage/input signal (VPP), the third golden finger 423 of the first NM card 4 is used to transmit the command and response signal (CMD), the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fifth Shrapnel 11e.
  • the programming voltage/input signal (VPP) signal of the Nano SIM card 3 may not be supported, so as to reduce the design difficulty of the processor 20.
  • the ninth gold finger 529 of the second NM card 5 corresponds to the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, it is all abutted against and electrically connected to the ninth elastic piece 11i of the card connector 11.
  • the ninth gold finger 529 of the NM card 5 is used to transmit data signals (such as TX+), the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3), the second NM card 5 and the first NM card 4.
  • the ninth shrapnel 11i can be time-divisionally multiplexed.
  • the tenth gold finger 5210 of the second NM card 5 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they all resist and electrically connect with the tenth elastic piece 11j of the card connector 11.
  • the tenth gold finger 5210 of the NM card 5 is used to transmit data signals (such as TX-), the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2), the second NM card 5 and the first NM card
  • the card 4 can time-division multiplex the tenth shrapnel 11j.
  • the ninth shrapnel 11i and the tenth shrapnel 11j of the card connector 11 can also be unique to the second NM card 5.
  • the shrapnel, the ninth shrapnel 11i and the tenth shrapnel 11j are all connected to the high-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or the Nano SIM card 3, the processor 20 does not need to switch between the ninth shrapnel 11i and the tenth shrapnel 11i.
  • the tenth shrapnel 11j is electrically connected to the interface, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • both the fourth gold finger 524 and the tenth gold finger 5210 of the second NM card 5 can be electrically connected to a high-voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • the time-division multiplexing of a shrapnel described in the embodiment of the present application may include providing different signals when different information cards are inserted, for example, a shrapnel provides the first NM card 4 when it is inserted.
  • the signal corresponding to the gold finger of the NM card 4, the signal corresponding to the gold finger of the second NM card 5 provided by the shrapnel when it is put into the second NM card 5, is an example scenario of time-division multiplexing.
  • the fifth gold finger 525 can be set in the air, and the sixth gold finger 526 is used to transmit the C/D signal; or, the fifth gold finger 525 and the sixth gold finger 526 are both set in the air.
  • FIG. 25 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in some embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 24 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the interface controller 201 is electrically connected to the SIM card controller 203 and the second memory card controller 2022, and the interface controller 201 is electrically connected to the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the programming voltage/input interface may not be supported, which reduces the design difficulty of the processor 20 .
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 supports the UFS protocol.
  • the second memory card controller 2022 includes four data interfaces, a reference clock interface, a second power supply interface, and a detection interface.
  • the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the reference clock interface is used For transmitting the reference clock signal (RCLK), the second power interface is used for transmitting the second power signal (VCCQ), and the detection interface is used for transmitting the detection signal (C/D).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 further includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VCC), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 as an example, and are respectively marked as power and ground.
  • the interface controller 201 is used for connecting the SIM card controller 203 and the card connector 11 , or connecting the second memory card controller 2022 and the card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 and a third switch 2013 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022 and the data interface (DATA) of the SIM card controller 203, and the first switch 2011 is also connected to the third elastic piece 11c of the card connector 11, The first switch 2011 is used to connect the data interface (such as RX-) between the third elastic piece 11c and the second memory card controller 2022 , or connect the data interface (DATA) between the third elastic piece 11c and the SIM card controller 203 .
  • a data interface such as RX-
  • DATA data interface
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022 and the clock interface (CLK) of the SIM card controller 203, and the second switch 2012 is also connected to the fourth elastic piece 11d of the card connector 11.
  • the switch 2012 is used for conducting the reference clock interface (RCLK) of the fourth elastic piece 11d and the second memory card controller 2022 , or conducting the clock interface (CLK) of the fourth elastic piece 11d and the SIM card controller 203 .
  • the third switch 2013 is connected to the detection interface (C/D) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the third switch 2013 is also connected to the fifth shrapnel of the card connector 11 11e, the third switch 2013 is used to conduct the detection interface (C/D) of the fifth elastic piece 11e and the second memory card controller 2022, or conduct the programming voltage/input interface of the fifth elastic piece 11e and the SIM card controller 203 (VPP).
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece 11i of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece 11j of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the reset interface (RST) of the SIM card controller 203 is electrically connected to the sixth elastic piece 11 f of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series with a switch to realize the conduction state and the connection state through the switch.
  • the switching of the cut-off state is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 performs data signals (RX+, RX-, TX+, TX-), the reference clock signal (RCLK), the second power supply signal (VCCQ) and the transmission of the detection signal (C/D), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the seventh shrapnel 11h of the card connector 11 11g, transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include the programming voltage/input interface (VPP)
  • the interface controller 201 may not include the third switch 2013, and the detection interface (C/D) of the second memory card controller 2022 is controlled by the interface.
  • the device 201 is electrically connected to the fifth elastic piece 11e of the card connector 11.
  • the interface controller 201 makes adaptive adjustments, for example, the interface controller 201 includes a fourth switch 2014, the third switch 2013 can be omitted, and the detection interface (C/D) of the second memory card controller 2022 is connected to the fourth switch 2014, and the interface controller 201 is also used in the second NM card 5 When the electronic device 100 is inserted, the detection interface (C/D) of the second memory card controller 2022 is connected to the sixth elastic piece 11f.
  • the second memory card controller 2022 does not need to set a detection interface, and the interface controller 201 makes adaptive adjustments. For example, the fourth gold finger may not be set. Switch 2014.
  • FIG. 26 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 24 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the first elastic piece 11 a to the tenth elastic piece 11 j of the card connector 11 of the card holder assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector 11, or connect the first memory card controller 2021 with the card connector 11, or connect the second memory card controller 2022 with the card connector 11.
  • card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022, a data interface (such as DATA1) of the first memory card controller 2021 and a data interface (DATA) of the SIM card controller 203,
  • the first switch 2011 is also connected to the third elastic piece 11c of the card connector 11.
  • the first switch 2011 is used to connect the third elastic piece 11c to the data interface (such as RX-) of the second memory card controller 2022, or to connect the third
  • the elastic piece 11c is connected to the data interface (for example, DATA1 ) of the first memory card controller 2021 , or is connected to the data interface (DATA) of the third elastic piece 11c and the SIM card controller 203 .
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022, the clock interface (CLK) of the first memory card controller 2021 and the clock interface (CLK) of the SIM card controller 203, the second switch 2012 Also connected to the fourth elastic piece 11d of the card connector 11, the second switch 2012 is used to connect the fourth elastic piece 11d to the reference clock interface (RCLK) of the second memory card controller 2022, or to connect the third elastic piece 11c to the first The clock interface (CLK) of the memory card controller 2021 , or connect the clock interface (CLK) of the fourth elastic piece 11 d and the SIM card controller 203 .
  • RCLK reference clock interface
  • CLK clock interface
  • the third switch 2013 is connected to the detection interface (C/D) of the second memory card controller 2022, the command and response multiplexing interface (CMD) of the first memory card controller 2021 and the programming voltage/input interface of the SIM card controller 203 (VPP), the third switch 2013 is also connected to the fifth elastic piece 11e of the card connector 11, and the third switch 2013 is used to conduct the detection interface (C/D) of the fifth elastic piece 11e and the second memory card controller 2022, or The fifth elastic piece 11e is connected to the command and response multiplexing interface (CMD) of the first memory card controller 2021 , or the fifth elastic piece 11e is connected to the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • the detection interface (C/D) or the programming voltage/input interface (VPP) may or may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the fourth switch 2014 is connected to another data interface (such as DATA0) of the first memory card controller 2021 and the reset interface (RST) of the SIM card controller 203, and the fourth switch 2014 is also connected to the sixth elastic piece 11f of the card connector 11, The fourth switch 2014 is used to connect the sixth elastic piece 11f to the data interface (eg DATA0 ) of the first memory card controller 2021 , or to connect the sixth elastic piece 11f to the reset interface (RST) of the SIM card controller 203 .
  • DATA0 data interface
  • RST reset interface
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the other data interface of the card connector 11.
  • the ninth elastic piece 11i, the fifth switch 2015 is used to conduct the data interface (such as TX+) between the ninth elastic piece 11i and the second memory card controller 2022, or conduct the data of the ninth elastic piece 11i and the first memory card controller 2021 interface (eg DATA3).
  • the sixth switch 2016 connects another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 also connects the card connector 11
  • the tenth elastic piece 11j, the sixth switch 2016 is used to conduct the data interface (such as TX-) between the tenth elastic piece 11j and the second memory card controller 2022, or conduct the tenth elastic piece 11j and the first memory card controller 2021
  • the data interface (eg DATA2).
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series with a switch to realize the switch between the conduction state and the cut-off state. The switching is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 connects the first memory card controller 2021 to the card connector 11, and the first NM card 4 is electrically connected to the card connector 11.
  • the memory card controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3 ), the clock signal (CLK) and the command and response signal (CMD), the processor 20 of the electronic device 100 passes through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11, and the first NM card 4. Transmission of the power signal (VCC) and the ground signal (GND), the first NM card 4 communicates with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 performs data signals (RX+, RX-, TX+, TX-), the reference clock signal (RCLK), the second power supply signal (VCCQ) and the transmission of the detection signal (C/D), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the seventh shrapnel 11h of the card connector 11 11g, transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP), and the third switch 2013 connects the detection interface (C/D) of the second memory card controller 2022 with the command of the first memory card controller 2021.
  • the third switch 2013 is also connected to the fifth elastic piece 11e of the card connector 11.
  • the interface controller 201 makes adaptive adjustments, for example, the second storage
  • the detection interface (C/D) of the card controller 2022 is connected to the fourth switch 2014, and the interface controller 201 is also used to turn on the detection interface of the second memory card controller 2022 when the second NM card 5 is inserted into the electronic device 100 (C/D) and the sixth shrapnel 11f.
  • the second memory card controller 2022 does not need to set a detection interface, and the interface controller 201 makes adaptive adjustments.
  • the following illustrates the second signal arrangement mode of the second NM card 5 using the UFS interface protocol as an example.
  • FIG. 27 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments.
  • the first gold finger 521 , the fifth gold finger 525 , the ninth gold finger 529 and the tenth gold finger 5210 of the second NM card 5 are used to transmit data signals.
  • the first gold finger 521 is used to transmit data signals (RX+)
  • the fifth gold finger 525 is used to transmit data signals (RX-)
  • the ninth gold finger 529 is used to transmit data signals (TX+)
  • the tenth gold finger 5210 is used to transmit data signal (TX-), as an example for illustration.
  • the data signals transmitted by the first gold finger 521 , the fifth gold finger 525 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other.
  • the data signals transmitted by the first gold finger 521 and the fifth gold finger 525 are exchanged
  • the data signals transmitted by the ninth gold finger 529 and the tenth gold finger 5210 are exchanged.
  • Other embodiments will not be repeated here.
  • the second gold finger 522 is used to transmit the second power signal (VCCQ); the fourth gold finger 524 is used to transmit the reference clock signal (RCLK); the seventh gold finger 527 is used to transmit the ground signal (VSS); the eighth gold finger 527 is used to transmit the ground signal (VSS); Finger 528 is used to transmit the first power signal (VCC).
  • the third gold finger 523 and the sixth gold finger 526 are suspended in the air.
  • Table 4 is Table 2 of the corresponding relationship between multiple shrapnels of the card connector 11 and multiple gold fingers of the Nano SIM card 3, the first NM card 4, and the second NM card 5 and their transmission signals.
  • the first elastic pieces 11a to the tenth elastic pieces 11j of the card connector 11 resist and electrically connect the first golden fingers 521 to the tenth golden fingers 521 of the second NM card 5 in one-to-one correspondence.
  • the gold finger 5210, the third gold finger 523 to the eighth gold finger 528 of the second NM card 5 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the third gold finger 523 to the tenth gold finger 5210 of the second NM card 5 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the second NM card 5 arranges the second power signal (VCCQ) required by the UFS protocol on the second gold finger 522, because the second gold finger 522 of the second NM card 5 and the Nano SIM card 3 There is no position correspondence with all gold fingers of the first NM card 4, and the second gold finger 522 of the second NM card 5 does not need to be the same shrapnel as the multiplex card connector 11 of the Nano SIM card 3 and the first NM card 4, Avoid the second power signal (VCCQ) sharing the same shrapnel with the data signals of the Nano SIM card 3 and the first NM card 4, so as to reduce the time when the Nano SIM card 3 and the first NM card 4 are inserted into the electronic device 100 and connected to the card connector 11.
  • VCCQ the second power signal
  • the risk of being burned by the second power supply signal (VCCQ), the reliability of the electronic device 100 being compatible with the Nano SIM card 3 and the first NM card 4 and the second NM card 5 is relatively high.
  • the first NM card 4 and the Nano SIM card 3 do not need to deploy a high-voltage resistant design for preventing the circuit from being burned by the second power signal (VCCQ), which can reduce costs.
  • the second NM card 5 arranges one of the high-speed data signals (such as RX+) on the first gold finger 521, because the first gold finger 521 of the second NM card 5 is connected with the Nano SIM card 3 and all of the first NM card 4 Gold fingers have no position correspondence, so the first shrapnel 11a is connected to the high-speed data interface of the processor 20 of the electronic device 100 without connecting to the low-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or Nano SIM
  • the card 3 is still the first NM card 4, and the processor 20 does not need to switch the interface electrically connected to the first shrapnel 11a, thereby reducing the difficulty of switching between the high-speed data interface and the low-speed data interface, simplifying the circuit of the processor 20, reducing the design difficulty and cost.
  • the seventh gold finger 527 of the second NM card 5 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4, when the electronic device 100 is inserted, it is consistent with the position of the card.
  • the seventh elastic piece 11g of the connector 11 is resisted and electrically connected, the seventh gold finger 527 of the second NM card 5, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for transmission ground signal (respectively VSS/GND/GND), so the processor 20 of the electronic device 100 can be electrically connected to the seventh elastic piece 11g of the card connector 11 through the same ground interface, no matter the information card inserted in the electronic device 100 is the second The NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the seventh shrapnel 11g, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • VSS/GND/GND transmission ground signal
  • the eighth gold finger 528 of the second NM card 5 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the eighth spring piece 11h of the device 11 is resisted and electrically connected, and the eighth gold finger 528 of the second NM card 5, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used for Transmission power signal (respectively VCC/VCC/VCC), so the processor 20 of the electronic device 100 can be electrically connected to the eighth shrapnel 11h of the card connector 11 through the same power interface, no matter the information card inserted in the electronic device 100 is the first For the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the eighth shrapnel 11h, thereby simplifying the circuit of the processor 20 and reducing design difficulty and
  • the fourth gold finger 524 of the second NM card 5 corresponds to the position of the second gold finger 322 of the Nano SIM card 3, corresponds to the position of the second gold finger 422 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the fourth elastic piece 11d of the device 11 is resisted and electrically connected, the fourth gold finger 524 of the second NM card 5 is used to transmit the reference clock signal (RCLK), and the second gold finger 322 of the Nano SIM card 3 is used to transmit the clock signal ( CLK), the second gold finger 422 of the first NM card 4 is used to transmit the clock signal (CLK), and the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fourth shrapnel 11d.
  • the processor 20 can provide clock signals of different frequencies through the fourth elastic piece 11d without switching data interface signals, thereby simplifying the circuit of the processor 20 and reducing design complexity and cost.
  • the processor 20 can provide the same clock signal for the three cards, and no longer need Switching further simplifies the design difficulty of the processor 20, for example, a unified clock frequency of 20MHz.
  • the fifth gold finger 525 of the second NM card 5 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is all connected to the card connector when inserted into the electronic device 100.
  • the fifth elastic piece 11e of 11 is resisted and electrically connected, the fifth gold finger 525 of the second NM card 5 is used to transmit data signals (such as RX-), and the third gold finger 323 of the Nano SIM card 3 is used to transmit programming voltage/input signal (VPP), the third golden finger 423 of the first NM card 4 is used to transmit the command and response signal (CMD), the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fifth Shrapnel 11e.
  • data signals such as RX-
  • VPP programming voltage/input signal
  • CMD command and response signal
  • the second NM card 5 the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fifth Shrapnel 11e.
  • the high-speed data signal of the fifth gold finger 525 of the second NM card 5 and the command and response signal (CMD) of the third gold finger 423 of the first NM card 4 are multiplexed with the same shrapnel, and are not connected with the first NM card 4.
  • the low-speed data signal multiplexes the same shrapnel.
  • the design difficulty of this scheme is less.
  • the programming voltage/input signal (VPP) may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the ninth gold finger 529 of the second NM card 5 corresponds to the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, it is all abutted against and electrically connected to the ninth elastic piece 11i of the card connector 11.
  • the ninth gold finger 529 of the NM card 5 is used to transmit data signals (such as TX+), the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3), the second NM card 5 and the first NM card 4.
  • the ninth shrapnel 11i can be time-divisionally multiplexed.
  • the tenth gold finger 5210 of the second NM card 5 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they all resist and electrically connect with the tenth elastic piece 11j of the card connector 11.
  • the tenth gold finger 5210 of the NM card 5 is used to transmit data signals (such as TX-), the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2), the second NM card 5 and the first NM card
  • the card 4 can time-division multiplex the tenth shrapnel 11j.
  • the ninth shrapnel 11i and the tenth shrapnel 11j of the card connector 11 can also be unique to the second NM card 5.
  • the shrapnel, the ninth shrapnel 11i and the tenth shrapnel 11j are all connected to the high-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or the Nano SIM card 3, the processor 20 does not need to switch between the ninth shrapnel 11i and the tenth shrapnel 11i.
  • the tenth shrapnel 11j is electrically connected to the interface, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • both the fourth gold finger 524 and the tenth gold finger 5210 of the second NM card 5 can be electrically connected to a high-voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • one of the third gold finger 523 and the sixth gold finger 526 can be used to transmit the detection signal (C/D), and the other can be suspended or used to transmit other signals; or, the Both the third gold finger 523 and the sixth gold finger 526 are used to transmit the detection signal (C/D).
  • the second NM card 5 transmits the detection signal (C/D) through at least one golden finger, which can reduce the difficulty for the electronic device 100 to identify the second NM card 5 .
  • the third gold finger 523 or the sixth gold finger 526 is used to transmit the detection signal (C/D)
  • the second NM card 5 the Nano SIM card 3 and the first NM card 4 can time-division multiplex the corresponding The third elastic piece 11c or the sixth elastic piece 11f.
  • FIG. 28 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 27 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 includes four data interfaces, a reference clock interface and a second power supply interface, the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the reference clock interface is used to transmit reference The clock signal (RCLK), and the second power interface is used to transmit the second power signal (VCCQ).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 further includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VCC), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 for illustration, and are respectively marked as power and ground.
  • the interface controller 201 is used for connecting the SIM card controller 203 and the card connector 11 , or connecting the second memory card controller 2022 and the card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 and a second switch 2012 .
  • the first switch 2011 is connected to the reference clock interface (RCLK) of the second memory card controller 2022 and the clock interface (CLK) of the SIM card controller 203, and the first switch 2011 is also connected to the fourth elastic piece 11d of the card connector 11, the first The switch 2011 is used to conduct the reference clock interface (RCLK) of the fourth elastic piece 11d and the second memory card controller 2022 , or conduct the clock interface (CLK) of the fourth elastic piece 11d and the SIM card controller 203 .
  • RCLK reference clock interface
  • CLK clock interface
  • the second switch 2012 connects a data interface (such as RX-) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the second switch 2012 also connects the fifth The elastic piece 11e, the second switch 2012 is used to conduct the data interface (such as RX-) of the fifth elastic piece 11e and the second memory card controller 2022, or conduct the programming voltage/input of the fifth elastic piece 11e and the SIM card controller 203 interface (VPP).
  • the programming voltage/input interface (VPP) may or may not be supported, so as to reduce the design difficulty of the processor 20 .
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece 11i of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece 11j of the card connector 11 through the interface controller 201 .
  • the data interface (DATA) of the SIM card controller 203 is electrically connected to the third elastic piece 11 c of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the reset interface (RST) of the SIM card controller 203 is electrically connected to the sixth elastic piece 11 f of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain conduction state, the interface controller 201 may also be connected in series with a switch to switch between the on state and the off state through the switch, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a, the second elastic piece 11b, the fourth elastic piece 11d, the fifth elastic piece 11e, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 For the transmission of data signals (RX+, RX-, TX+, TX-), reference clock signal (RCLK) and second power supply signal (VCCQ), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the second power supply signal of the card connector 11
  • the seven elastic pieces 11g transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP)
  • the interface controller 201 may not include the second switch 2012
  • a data interface (for example, RX-) of the second memory card controller 2022 passes through the interface
  • the controller 201 is electrically connected to the fifth elastic piece 11 e of the card connector 11 .
  • FIG. 29 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 27 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the first elastic piece 11 a to the tenth elastic piece 11 j of the card connector 11 of the card holder assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector 11, or connect the first memory card controller 2021 with the card connector 11, or connect the second memory card controller 2022 with the card connector 11.
  • card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to the reference clock interface (RCLK) of the second memory card controller 2022, the clock interface (CLK) of the first memory card controller 2021 and the clock interface (CLK) of the SIM card controller 203, the first switch 2011 Also connected to the fourth elastic piece 11d of the card connector 11, the first switch 2011 is used to connect the fourth elastic piece 11d to the reference clock interface (RCLK) of the second memory card controller 2022, or to connect the third elastic piece 11c to the first The clock interface (CLK) of the memory card controller 2021 , or connect the clock interface (CLK) of the fourth elastic piece 11 d and the SIM card controller 203 .
  • RCLK reference clock interface
  • CLK clock interface
  • the second switch 2012 connects a data interface (such as RX-) of the second memory card controller 2022, a command and response multiplexing interface (CMD) of the first memory card controller 2021, and a programming voltage/input of the SIM card controller 203 interface (VPP), the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11, and the second switch 2012 is used to conduct the data interface (such as RX-) of the fifth elastic piece 11e and the second memory card controller 2022, Either connect the fifth elastic piece 11e with the command and response multiplexing interface (CMD) of the first memory card controller 2021 , or connect the fifth elastic piece 11e with the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • a data interface such as RX-
  • CMD command and response multiplexing interface
  • VPP programming voltage/input interface
  • the third switch 2013 is connected to a data interface (such as DATA1) of the first memory card controller 2021 and the data interface (DATA) of the SIM card controller 203, and the third switch 2013 is also connected to the third elastic piece 11c of the card connector 11.
  • the three switches 2013 are used to connect the data interface (such as DATA1 ) between the third elastic piece 11 c and the first memory card controller 2021 , or connect the data interface (DATA) between the third elastic piece 11 c and the SIM card controller 203 .
  • the fourth switch 2014 is connected to another data interface (such as DATA0) of the first memory card controller 2021 and the reset interface (RST) of the SIM card controller 203, and the fourth switch 2014 is also connected to the sixth elastic piece 11f of the card connector 11, The fourth switch 2014 is used to connect the sixth elastic piece 11f to the data interface (eg DATA0 ) of the first memory card controller 2021 , or to connect the sixth elastic piece 11f to the reset interface (RST) of the SIM card controller 203 .
  • DATA0 data interface
  • RST reset interface
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the other data interface of the card connector 11.
  • the ninth elastic piece 11i, the fifth switch 2015 is used to conduct the data interface (such as TX+) between the ninth elastic piece 11i and the second memory card controller 2022, or conduct the data of the ninth elastic piece 11i and the first memory card controller 2021 interface (eg DATA3).
  • the sixth switch 2016 connects another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 also connects the card connector 11
  • the tenth elastic piece 11j, the sixth switch 2016 is used to conduct the data interface (such as TX-) between the tenth elastic piece 11j and the second memory card controller 2022, or conduct the tenth elastic piece 11j and the first memory card controller 2021
  • the data interface (eg DATA2).
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series with a switch to realize the switch between the conduction state and the cut-off state. The switching is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 connects the first memory card controller 2021 to the card connector 11, and the first NM card 4 is electrically connected to the card connector 11.
  • the memory card controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3 ), the clock signal (CLK) and the command and response signal (CMD), the processor 20 of the electronic device 100 passes through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11, and the first NM card 4. Transmission of the power signal (VCC) and the ground signal (GND), the first NM card 4 communicates with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a, the second elastic piece 11b, the fourth elastic piece 11d, the fifth elastic piece 11e, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 For the transmission of data signals (RX+, RX-, TX+, TX-), reference clock signal (RCLK) and second power supply signal (VCCQ), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the second power supply signal of the card connector 11
  • the seven elastic pieces 11g transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP), and the second switch 2012 is connected to a data interface (such as RX-) of the second memory card controller 2022 and a data interface (such as RX-) of the first memory card controller 2021.
  • CMD Command and Response Multiplexing Interface
  • the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11.
  • the second The memory card controller 2022 also includes a detection interface, the detection interface is used to transmit the detection signal (C/D), and the interface controller 201 is also used to connect the detection interface to the corresponding first NM card 5 when the second NM card 5 is inserted into the electronic device 100.
  • the third elastic piece 11c or the sixth elastic piece 11f wherein, the interface controller 201 is connected to the third elastic piece 11c or the sixth elastic piece 11f through a switch, and the switch is also connected to the detection interface of the second memory card controller 2022 .
  • the following illustrates the third signal arrangement of the second NM card 5 using the UFS interface protocol as an example.
  • FIG. 30 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments.
  • the first gold finger 521 , the fifth gold finger 525 , the ninth gold finger 529 and the tenth gold finger 5210 of the second NM card 5 are used to transmit data signals.
  • the first gold finger 521 is used to transmit data signals (RX+)
  • the fifth gold finger 525 is used to transmit data signals (RX-)
  • the ninth gold finger 529 is used to transmit data signals (TX+)
  • the tenth gold finger 5210 is used to transmit data signal (TX-), as an example for illustration.
  • the data signals transmitted by the first gold finger 521 , the fifth gold finger 525 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other.
  • the data signals transmitted by the first gold finger 521 and the fifth gold finger 525 are exchanged
  • the data signals transmitted by the ninth gold finger 529 and the tenth gold finger 5210 are exchanged.
  • Other embodiments will not be repeated here.
  • the second gold finger 522 is used to transmit the second power signal (VCCQ); the sixth gold finger 526 is used to transmit the reference clock signal (RCLK); the seventh gold finger 527 is used to transmit the ground signal (VSS); the eighth gold finger Finger 528 is used to transmit the first power signal (VCC).
  • the third gold finger 523 and the fourth gold finger 524 are suspended in the air.
  • Table 5 is the corresponding relationship between multiple shrapnels of the card connector 11 and multiple gold fingers of the Nano SIM card 3, the first NM card 4, and the second NM card 5 and their transmission signals.
  • the first elastic pieces 11a to the tenth elastic pieces 11j of the card connector 11 resist and electrically connect the first golden fingers 521 to the tenth golden fingers 521 of the second NM card 5 in one-to-one correspondence.
  • the gold finger 5210, the third gold finger 523 to the eighth gold finger 528 of the second NM card 5 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the third gold finger 523 to the tenth gold finger 5210 of the second NM card 5 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the second NM card 5 arranges the second power signal (VCCQ) required by the UFS protocol on the second gold finger 522, because the second gold finger 522 of the second NM card 5 and the Nano SIM card 3 There is no position correspondence with all gold fingers of the first NM card 4, and the second gold finger 522 of the second NM card 5 does not need to be the same shrapnel as the multiplex card connector 11 of the Nano SIM card 3 and the first NM card 4, Avoid the second power signal (VCCQ) sharing the same shrapnel with the data signals of the Nano SIM card 3 and the first NM card 4, so as to reduce the time when the Nano SIM card 3 and the first NM card 4 are inserted into the electronic device 100 and connected to the card connector 11.
  • VCCQ the second power signal
  • the risk of being burned by the second power supply signal (VCCQ), the reliability of the electronic device 100 being compatible with the Nano SIM card 3 and the first NM card 4 and the second NM card 5 is relatively high.
  • the first NM card 4 and the Nano SIM card 3 do not need to deploy a high-voltage resistant design for preventing the circuit from being burned by the second power signal (VCCQ), which can reduce costs.
  • the second NM card 5 arranges one of the high-speed data signals (such as RX+) on the first gold finger 521, because the first gold finger 521 of the second NM card 5 is connected with the Nano SIM card 3 and all of the first NM card 4 Gold fingers have no position correspondence, so the first shrapnel 11a is connected to the high-speed data interface of the processor 20 of the electronic device 100 without connecting to the low-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or Nano SIM
  • the card 3 is still the first NM card 4, and the processor 20 does not need to switch the interface electrically connected to the first shrapnel 11a, thereby reducing the difficulty of switching between the high-speed data interface and the low-speed data interface, simplifying the circuit of the processor 20, reducing design difficulty and cost.
  • the seventh gold finger 527 of the second NM card 5 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4, when the electronic device 100 is inserted, it is consistent with the position of the card.
  • the seventh elastic piece 11g of the connector 11 is resisted and electrically connected, the seventh gold finger 527 of the second NM card 5, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for transmission ground signal (respectively VSS/GND/GND), so the processor 20 of the electronic device 100 can be electrically connected to the seventh elastic piece 11g of the card connector 11 through the same ground interface, no matter the information card inserted in the electronic device 100 is the second The NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the seventh shrapnel 11g, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • VSS/GND/GND transmission ground signal
  • the eighth gold finger 528 of the second NM card 5 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the eighth spring piece 11h of the device 11 is resisted and electrically connected, and the eighth gold finger 528 of the second NM card 5, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used for Transmission power signal (respectively VCC/VCC/VCC), so the processor 20 of the electronic device 100 can be electrically connected to the eighth shrapnel 11h of the card connector 11 through the same power interface, no matter the information card inserted in the electronic device 100 is the first For the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the eighth shrapnel 11h, thereby simplifying the circuit of the processor 20 and reducing design difficulty and
  • the fifth gold finger 525 of the second NM card 5 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is all connected to the card connector when inserted into the electronic device 100.
  • the fifth elastic piece 11e of 11 is resisted and electrically connected, the fifth gold finger 525 of the second NM card 5 is used to transmit data signals (such as RX-), and the third gold finger 323 of the Nano SIM card 3 is used to transmit programming voltage/input signal (VPP), the first gold finger 421 of the first NM card 4 is used to transmit command and response signal (CMD), the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the fifth Shrapnel 11e.
  • VPP programming voltage/input signal
  • CMD command and response signal
  • the sixth gold finger 526 of the second NM card 5 corresponds to the position of the fourth gold finger 324 of the Nano SIM card 3, and corresponds to the position of the fourth gold finger 424 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the sixth elastic piece 11f of the device 11 is resisted and electrically connected
  • the sixth gold finger 526 of the second NM card 5 is used to transmit the reference clock signal (RCLK)
  • the fourth gold finger 324 of the Nano SIM card 3 is used to transmit the reset signal ( RST)
  • the fourth gold finger 424 of the first NM card 4 is used to transmit data signals (such as DATA0)
  • the second NM card 5 Nano SIM card 3 and the first NM card 4 can time-division multiplex the sixth shrapnel 11f.
  • the ninth gold finger 529 of the second NM card 5 corresponds to the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, it is all abutted against and electrically connected to the ninth elastic piece 11i of the card connector 11.
  • the ninth gold finger 529 of the NM card 5 is used to transmit data signals (such as TX+), the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3), the second NM card 5 and the first NM card 4.
  • the ninth shrapnel 11i can be time-divisionally multiplexed.
  • the tenth gold finger 5210 of the second NM card 5 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they all resist and electrically connect with the tenth elastic piece 11j of the card connector 11.
  • the tenth gold finger 5210 of the NM card 5 is used to transmit data signals (such as TX-), the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2), the second NM card 5 and the first NM card
  • the card 4 can time-division multiplex the tenth shrapnel 11j.
  • the ninth shrapnel 11i and the tenth shrapnel 11j of the card connector 11 can also be unique to the second NM card 5.
  • the shrapnel, the ninth shrapnel 11i and the tenth shrapnel 11j are all connected to the high-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or the Nano SIM card 3, the processor 20 does not need to switch between the ninth shrapnel 11i and the tenth shrapnel 11i.
  • the tenth shrapnel 11j is electrically connected to the interface, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • both the fourth gold finger 524 and the tenth gold finger 5210 of the second NM card 5 can be electrically connected to a high-voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • the fourth gold finger 524 when the fourth gold finger 524 is suspended in the air and does not form the interface of the second NM card 5, the fourth gold finger 524 may also not be electrically connected to the high voltage withstand circuit or the protection switch.
  • the interface connection circuit corresponding to the third elastic piece 11c and the fourth elastic piece 11d of the electrical connector is simplified, so that the electronic The device 100 is more easily compatible with the Nano SIM card 3 and the second NM card 5.
  • one of the third gold finger 523 and the fourth gold finger 524 can be used to transmit the detection signal (C/D), and the other can be suspended or used to transmit other signals; or, the first Both the third gold finger 523 and the fourth gold finger 524 are used to transmit the detection signal (C/D).
  • the second NM card 5 transmits the detection signal (C/D) through at least one golden finger, which can reduce the difficulty for the electronic device 100 to identify the second NM card 5 .
  • the third gold finger 523 or the fourth gold finger 524 is used to transmit the detection signal (C/D)
  • the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the corresponding The third elastic piece 11c or the fourth elastic piece 11d.
  • FIG. 31 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 30 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 includes four data interfaces, a reference clock interface and a second power supply interface, the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the reference clock interface is used to transmit reference The clock signal (RCLK), and the second power interface is used to transmit the second power signal (VCCQ).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 further includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VCC), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 for illustration, and are respectively marked as power and ground.
  • the interface controller 201 is used for connecting the SIM card controller 203 and the card connector 11 , or connecting the second memory card controller 2022 and the card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 and a second switch 2012 .
  • the first switch 2011 connects a data interface (such as RX-) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the first switch 2011 also connects the fifth The elastic piece 11e, the first switch 2011 is used to conduct the data interface (such as RX-) of the fifth elastic piece 11e and the second memory card controller 2022, or conduct the programming voltage/input of the fifth elastic piece 11e and the SIM card controller 203 interface (VPP).
  • a data interface such as RX-
  • VPP programming voltage/input interface
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022 and the reset interface (RST) of the SIM card controller 203, and the second switch 2012 is also connected to the sixth shrapnel 11f of the card connector 11.
  • the switch 2012 is used to connect the sixth elastic piece 11f to the reference clock interface (RCLK) of the second memory card controller 2022 , or to connect the sixth elastic piece 11f to the reset interface (RST) of the SIM card controller 203 .
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece 11i of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece 11j of the card connector 11 through the interface controller 201 .
  • the data interface (DATA) of the SIM card controller 203 is electrically connected to the third elastic piece 11 c of the card connector 11 through the interface controller 201 .
  • the clock interface (CLK) of the SIM card controller 203 is electrically connected to the fourth elastic piece 11 d of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by a wire to maintain the conduction state.
  • the interface controller 201 can also be connected in series with a switch to switch between the conduction state and the cut-off state through the switch. This embodiment of the application does not make any reference to this. Strictly limited.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a, the second elastic piece 11b, the fifth elastic piece 11e, the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 For the transmission of data signals (RX+, RX-, TX+, TX-), reference clock signal (RCLK) and second power supply signal (VCCQ), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the second power supply signal of the card connector 11
  • the seven elastic pieces 11g transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP)
  • the interface controller 201 may not include the first switch 2011, and a data interface (for example, RX-) of the second memory card controller 2022 passes through the interface
  • the controller 201 is connected to the fifth elastic piece 11 e of the card connector 11 .
  • FIG. 32 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 30 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the first elastic piece 11 a to the tenth elastic piece 11 j of the card connector 11 of the card holder assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector 11, or connect the first memory card controller 2021 with the card connector 11, or connect the second memory card controller 2022 with the card connector 11.
  • card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022, the command and response multiplexing interface (CMD) of the first memory card controller 2021 and the programming voltage/input of the SIM card controller 203 Interface (VPP), the first switch 2011 is also connected to the fifth elastic piece 11e of the card connector 11, the first switch 2011 is used to connect the fifth elastic piece 11e and the data interface (for example, RX-) of the second memory card controller 2022, Either connect the fifth elastic piece 11e with the command and response multiplexing interface (CMD) of the first memory card controller 2021 , or connect the fifth elastic piece 11e with the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • a data interface such as RX-
  • CMD command and response multiplexing interface
  • VPP programming voltage/input interface
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022, a data interface (such as DATA0) of the first memory card controller 2021 and the reset interface (RST) of the SIM card controller 203, the second The switch 2012 is also connected to the sixth elastic piece 11f of the card connector 11, and the second switch 2012 is used to connect the sixth elastic piece 11f to the reference clock interface (RCLK) of the second memory card controller 2022, or to connect the sixth elastic piece 11f to the reference clock interface (RCLK) of the second memory card controller 2022.
  • the data interface (such as DATA0 ) of the first memory card controller 2021 or the reset interface (RST) of the sixth elastic piece 11f and the SIM card controller 203 are connected.
  • the third switch 2013 is connected to another data interface (such as DATA1) of the first memory card controller 2021 and the data interface (DATA) of the SIM card controller 203, and the third switch 2013 is also connected to the third elastic piece 11c of the card connector 11, The third switch 2013 is used to connect the data interface (such as DATA1 ) between the third elastic piece 11 c and the first memory card controller 2021 , or connect the data interface (DATA) between the third elastic piece 11 c and the SIM card controller 203 .
  • DATA1 data interface
  • the fourth switch 2014 is connected to the clock interface (CLK) of the first memory card controller 2021 and the clock interface (CLK) of the SIM card controller 203, and the fourth switch 2014 is also connected to the fourth elastic piece 11d of the card connector 11, and the fourth switch 2014 is used for conducting the clock interface (CLK) of the fourth elastic piece 11d and the first memory card controller 2021 , or conducting the clock interface (CLK) of the fourth elastic piece 11d and the SIM card controller 203 .
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the other data interface of the card connector 11.
  • the ninth elastic piece 11i, the fifth switch 2015 is used to conduct the data interface (such as TX+) between the ninth elastic piece 11i and the second memory card controller 2022, or conduct the data of the ninth elastic piece 11i and the first memory card controller 2021 interface (eg DATA3).
  • the sixth switch 2016 connects another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 also connects the card connector 11
  • the tenth elastic piece 11j, the sixth switch 2016 is used to conduct the data interface (such as TX-) between the tenth elastic piece 11j and the second memory card controller 2022, or conduct the tenth elastic piece 11j and the first memory card controller 2021
  • the data interface (eg DATA2).
  • Another data interface (for example, RX+) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • the second power interface (VCCQ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series with switches to realize the switch between the conduction state and the cut-off state. The switching is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 connects the first memory card controller 2021 to the card connector 11, and the first NM card 4 is electrically connected to the card connector 11.
  • the memory card controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3 ), the clock signal (CLK) and the command and response signal (CMD), the processor 20 of the electronic device 100 passes through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11, and the first NM card 4. Transmission of the power signal (VCC) and the ground signal (GND), the first NM card 4 communicates with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a, the second elastic piece 11b, the fifth elastic piece 11e, the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 For the transmission of data signals (RX+, RX-, TX+, TX-), reference clock signal (RCLK) and second power supply signal (VCCQ), the processor 20 of the electronic device 100 passes the eighth shrapnel 11h and the second power supply signal of the card connector 11
  • the seven elastic pieces 11g transmit the first power signal (VCC) and the ground signal (VSS) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5.
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP), and the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022 and a data interface (such as RX-) of the first memory card controller 2021.
  • the first switch 2011 is also connected to the fifth elastic piece 11e of the card connector 11.
  • the second The memory card controller 2022 also includes a detection interface, the detection interface is used to transmit the detection signal (C/D), and the interface controller 201 is also used to connect the detection interface to the corresponding first NM card 5 when the second NM card 5 is inserted into the electronic device 100.
  • the third elastic piece 11c or the sixth elastic piece 11f wherein, the interface controller 201 is connected to the third elastic piece 11c or the fourth elastic piece 11d through a switch, and the switch is also connected to the detection interface of the second memory card controller 2022 .
  • the PCIe interface protocol adopted by the second NM card is a layered protocol consisting of a transaction layer, a data link layer, and a physical layer. Its main advantage is the high data transmission rate, and it also has the advantages of strong anti-interference ability, long transmission distance, and low power consumption.
  • the transmission mode of PCI Express is changed from PCI parallel to serial, by using differential transmission. This transmission method transmits the same content through one positive and one negative mirror to improve the efficiency of interference detection and correction, and PCI Express can use full duplex, so the transmission efficiency of PCI Express is greatly improved compared with PCI.
  • PCI Express Since 2001, PCI Express has been updated from version 1.0 to version 5.0 in 20 years, and will be officially updated to version 6.0 in 2021. There is no doubt that PCI Express is a popular transmission bus standard. For PCIe1.0, the bandwidth is nearly twice that of PCI, and the bandwidth of PCI Express6.0, which is planned to be released in 2021, can reach up to 256GB/s. In 2018, the SD Association officially announced that SD (Secure Digital) cards are compatible with PCI Express channels, and that PCI Express is compatible with mobile memory cards has become a reality. For NM cards, PCI Express has the advantage of providing large bandwidth.
  • SD Secure Digital
  • the second NM card 5 includes at least ten gold fingers, for example including the first gold finger 521 to the tenth gold finger 5210.
  • the first gold fingers 521 to the tenth gold fingers 5210 four gold fingers are used to transmit data signals (RX+, RX-, TX+, TX-), and two gold fingers are used to transmit clock signals (CLK+, CLK-)
  • One gold finger is used to transmit the first power signal (VDD1)
  • one gold finger is used to transmit the ground signal (VSS)
  • one gold finger is used to transmit the second power signal (VDD2).
  • VDD1 first power signal
  • VSS ground signal
  • VDD2 second power signal
  • the second NM card 5 can support the PCIe interface protocol and realize the basic performance of the high-speed card.
  • data signal (RX+) and data signal (RX-) are input differential signals; data signal (TX+) and data signal (TX-) are output differential signals; clock signal (CLK+) and clock signal (CLK-) are Differential low-voltage clock signal.
  • the first power signal (VDD1) is responsible for the power supply of the storage circuit 513 of the second NM card 5; the second power signal (VDD2) is responsible for the power supply of the control circuit 512 of the second NM card 5.
  • the voltage of the first power signal ( VDD1 ) is higher than the voltage of the second power signal ( VDD2 ).
  • the voltage of the first power signal ( VDD1 ) can be in the range of 2.7V to 3.6V
  • the voltage of the second power signal ( VDD2 ) can be in the range of 1.70V to 1.95V.
  • the detection signal (C/D) can be a special data signal.
  • the electronic device 100 can identify the inserted information through the detection signal (C/D). Whether the card is the second NM card 5; in some embodiments, the electronic device 100 can also identify the version of the inserted second NM card 5 through the detection signal (C/D), or identify the interface of the inserted second NM card 5 protocol.
  • the second NM card 5 transmits the detection signal (C/D) through one of the golden fingers, which can reduce the difficulty for the electronic device 100 to identify the second NM card 5 .
  • the following illustrates the first signal arrangement mode of the second NM card 5 using the PCIe interface protocol as an example.
  • FIG. 33 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments.
  • the third gold finger 523 , the sixth gold finger 526 , the ninth gold finger 529 and the tenth gold finger 5210 of the second NM card 5 are used to transmit data signals.
  • the third golden finger 523 is used to transmit data signals (RX-)
  • the sixth golden finger 526 is used to transmit data signals (RX+)
  • the ninth golden finger 529 is used to transmit data signals (TX+)
  • the finger 5210 is used to transmit a data signal (TX-), which is described as an example.
  • the data signals transmitted by the third gold finger 523 , the sixth gold finger 526 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other.
  • the data signals transmitted by the third gold finger 523 and the sixth gold finger 526 are exchanged, and the data signals transmitted by the ninth gold finger 529 and the tenth gold finger 5210 are exchanged.
  • Other embodiments will not be repeated here.
  • the second gold finger 522 and the fifth gold finger 525 are used for transmitting clock signals.
  • the second gold finger 522 is used to transmit the clock signal (CLK ⁇ )
  • the fifth gold finger 525 is used to transmit the clock signal (CLK+) as an example for illustration.
  • the clock signals transmitted by the second gold finger 522 and the fifth gold finger 525 can be exchanged with each other.
  • the first gold finger 521 is used to transmit the second power signal (VDD2); the seventh gold finger 527 is used to transmit the ground signal (VSS); the eighth gold finger 528 is used to transmit the first power signal (VDD1).
  • the fourth gold finger 524 is suspended in the air.
  • Table 6 is Table 4 of the corresponding relationship between multiple shrapnels of the card connector 11 and multiple golden fingers of the Nano SIM card 3, the first NM card 4, and the second NM card 5 and their transmission signals.
  • the first elastic pieces 11a to the tenth elastic pieces 11j of the card connector 11 resist and electrically connect the first golden fingers 521 to the tenth golden fingers 521 of the second NM card 5 in one-to-one correspondence.
  • the gold finger 5210, the third gold finger 523 to the eighth gold finger 528 of the second NM card 5 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the third gold finger 523 to the tenth gold finger 5210 of the second NM card 5 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the second NM card 5 arranges the second power signal (VDD2) required by the PCIe protocol on the first gold finger 521, because the first gold finger 521 of the second NM card 5 is connected to the Nano SIM card 3 There is no position correspondence with all gold fingers of the first NM card 4, the first gold finger 521 of the second NM card 5 does not need to be the same shrapnel as the multiplex card connector 11 of the Nano SIM card 3 and the first NM card 4, Avoid the second power supply signal (VDD2) sharing the same shrapnel with the data signals of the Nano SIM card 3 and the first NM card 4, so as to reduce the time when the Nano SIM card 3 and the first NM card 4 are inserted into the electronic device 100 and connected to the card connector 11.
  • VDD2 the second power signal
  • the risk of being burned out by the second power supply signal (VDD2), the reliability of the electronic device 100 being compatible with the Nano SIM card 3 and the first NM card 4 and the second NM card 5 is relatively high.
  • the first NM card 4 and the Nano SIM card 3 do not need to deploy a high-voltage resistant design for preventing the circuit from being burned by the second power signal (VDD2), which can reduce costs.
  • the second NM card 5 arranges one of the clock signals (such as CLK-) on the second gold finger 522, because the second gold finger 522 of the second NM card 5 is connected with all the gold fingers of the Nano SIM card 3 and the first NM card 4. Fingers have no position correspondence, so no matter whether the information card inserted in the electronic device 100 is the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the first shrapnel 11a , so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • CLK- clock signals
  • the seventh gold finger 527 of the second NM card 5 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4, when the electronic device 100 is inserted, it is consistent with the position of the card.
  • the seventh elastic piece 11g of the connector 11 is resisted and electrically connected, the seventh gold finger 527 of the second NM card 5, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for transmission ground signal (respectively VSS/GND/GND), so the processor 20 of the electronic device 100 can be electrically connected to the seventh elastic piece 11g of the card connector 11 through the same ground interface, no matter the information card inserted in the electronic device 100 is the second The NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the seventh shrapnel 11g, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • VSS/GND/GND transmission ground signal
  • the eighth gold finger 528 of the second NM card 5 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the eighth spring piece 11h of the device 11 is resisted and electrically connected, and the eighth gold finger 528 of the second NM card 5, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used for Transmit power supply signals (respectively VDD1/VCC/VCC), so the processor 20 of the electronic device 100 can be electrically connected to the eighth shrapnel 11h of the card connector 11 through the same power interface, regardless of whether the information card inserted in the electronic device 100 is the first For the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the eighth shrapnel 11h, thereby simplifying the circuit of the processor 20 and reducing
  • the third gold finger 523 of the second NM card 5 corresponds to the position of the first gold finger 321 of the Nano SIM card 3, corresponds to the position of the first gold finger 421 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the third elastic piece 11c of the device 11 is resisted and electrically connected, the third gold finger 523 of the second NM card 5 is used to transmit data signals (such as RX-), and the first gold finger 321 of the Nano SIM card 3 is used for data signals ( DATA), the first golden finger 421 of the first NM card 4 is used to transmit data signals (such as DATA1), and the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the third elastic piece 11c.
  • the fifth gold finger 525 of the second NM card 5 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is all connected to the card connector when inserted into the electronic device 100.
  • the fifth elastic piece 11e of 11 is resisted and electrically connected, the fifth gold finger 525 of the second NM card 5 is used to transmit another clock signal (such as CLK+), and the third gold finger 323 of the Nano SIM card 3 is used to transmit the programming voltage/ Input signal (VPP), the first gold finger 421 of the first NM card 4 is used for transmitting command and response signal (CMD), the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the first Five shrapnel 11e.
  • CLK+ clock signal
  • CMD command and response signal
  • the sixth gold finger 526 of the second NM card 5 corresponds to the position of the fourth gold finger 324 of the Nano SIM card 3, and corresponds to the position of the fourth gold finger 424 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the sixth elastic piece 11f of the device 11 is resisted and electrically connected, the sixth gold finger 526 of the second NM card 5 is used to transmit another data signal (such as RX+), and the fourth gold finger 324 of the Nano SIM card 3 is used to transmit reset Signal (RST), the fourth golden finger 424 of the first NM card 4 is used to transmit data signals (such as DATA0), the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the sixth shrapnel 11f.
  • the ninth gold finger 529 of the second NM card 5 corresponds to the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, it is all abutted against and electrically connected to the ninth elastic piece 11i of the card connector 11.
  • the ninth gold finger 529 of the NM card 5 is used to transmit data signals (such as TX+), the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3), the second NM card 5 and the first NM card 4.
  • the ninth shrapnel 11i can be time-divisionally multiplexed.
  • the tenth gold finger 5210 of the second NM card 5 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they all resist and electrically connect with the tenth elastic piece 11j of the card connector 11.
  • the tenth gold finger 5210 of the NM card 5 is used to transmit data signals (such as TX-), the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2), the second NM card 5 and the first NM card
  • the card 4 can time-division multiplex the tenth shrapnel 11j.
  • the ninth shrapnel 11i and the tenth shrapnel 11j of the card connector 11 can also be unique to the second NM card 5.
  • the shrapnel, the ninth shrapnel 11i and the tenth shrapnel 11j are all connected to the high-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or the Nano SIM card 3, the processor 20 does not need to switch between the ninth shrapnel 11i and the tenth shrapnel 11i.
  • the tenth shrapnel 11j is electrically connected to the interface, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • the third gold finger 523 and the tenth gold finger 5210 of the second NM card 5 can be electrically connected to a high voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • the fourth golden finger 524 may also not be suspended, and is used for transmitting the detection signal (C/D).
  • the second gold finger 522 of the second NM card 5 is suspended or used to transmit a detection signal (C/D), and the fourth gold finger 524 is used to transmit a clock signal (eg CLK-).
  • the clock signals transmitted by the fourth gold finger 524 and the fifth gold finger 525 can be exchanged with each other.
  • FIG. 34 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 33 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 includes four data interfaces, two clock interfaces and a second power supply interface, the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the two clock interfaces are used for The clock signal (CLK+, CLK-) is transmitted, and the second power interface is used for transmitting the second power signal (VDD2).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 also includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VDD1), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 for illustration, and are marked as power and ground respectively.
  • the interface controller 201 is used for connecting the SIM card controller 203 and the card connector 11 , or connecting the second memory card controller 2022 and the card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 and a third switch 2013 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022 and the data interface (DATA) of the SIM card controller 203, and the first switch 2011 is also connected to the third elastic piece 11c of the card connector 11, The first switch 2011 is used to connect the data interface (such as RX-) between the third elastic piece 11c and the second memory card controller 2022 , or connect the data interface (DATA) between the third elastic piece 11c and the SIM card controller 203 .
  • a data interface such as RX-
  • DATA data interface
  • the second switch 2012 connects one of the clock interfaces (such as CLK+) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the second switch 2012 also connects the fifth pin of the card connector 11.
  • the elastic piece 11e, the second switch 2012 is used to conduct the clock interface (such as CLK+) of the fifth elastic piece 11e and the second memory card controller 2022, or conduct the programming voltage/input interface of the fifth elastic piece 11e and the SIM card controller 203 (VPP).
  • the third switch 2013 is connected to another data interface (such as RX+) of the second memory card controller 2022 and the reset interface (RST) of the SIM card controller 203, and the third switch 2013 is also connected to the sixth elastic piece 11f of the card connector 11, The third switch 2013 is used to connect the sixth elastic piece 11f to the data interface (for example, RX+) of the second memory card controller 2022 , or to connect the sixth elastic piece 11f to the reset interface (RST) of the SIM card controller 203 .
  • RX+ data interface
  • RST reset interface
  • the second power interface ( VDD2 ) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • Another clock interface (for example, CLK ⁇ ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece 11i of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece 11j of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the clock interface (CLK) of the SIM card controller 203 is electrically connected to the fourth elastic piece 11 d of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to keep the guide In the ON state, the interface controller 201 may also be connected with a switch in series to switch between the ON state and the OFF state through the switch, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a to the third elastic piece 11c, the fifth elastic piece 11e, the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 passes through the eighth shrapnel of the card connector 11 11h and the seventh elastic piece 11g transmit the first power signal ( VDD1 ) and the ground signal ( VSS ) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the third gold finger 523 and the tenth gold finger 5210 of the second NM card 5 can be electrically connected to a high voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • the interface controller 201 makes adaptive adjustments, and the interface controller 201 is also used to transmit the detection signal (C/D) on the second NM card. 5 When inserting into the electronic device 100, connect the detection interface (C/D) of the second memory card controller 2022 and the fourth elastic piece 11d.
  • the interface controller 201 makes adaptive adjustments, and the interface control The switch 201 is also used to connect the clock interface (eg CLK-) of the second memory card controller 2022 and the fourth elastic piece 11d when the second NM card 5 is inserted into the electronic device 100 .
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP)
  • the interface controller 201 may not include the second switch 2012
  • a clock interface (such as CLK+) of the second memory card controller 2022 is controlled through the interface
  • the device 201 is electrically connected to the fifth elastic piece 11e of the card connector 11.
  • FIG. 35 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 33 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the first elastic piece 11 a to the tenth elastic piece 11 j of the card connector 11 of the card holder assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector 11, or connect the first memory card controller 2021 with the card connector 11, or connect the second memory card controller 2022 with the card connector 11.
  • card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022, a data interface (such as DATA1) of the first memory card controller 2021 and a data interface (DATA) of the SIM card controller 203,
  • the first switch 2011 is also connected to the third elastic piece 11c of the card connector 11.
  • the first switch 2011 is used to connect the third elastic piece 11c to the data interface (such as RX-) of the second memory card controller 2022, or to connect the third
  • the elastic piece 11c is connected to the data interface (for example, DATA1 ) of the first memory card controller 2021 , or is connected to the data interface (DATA) of the third elastic piece 11c and the SIM card controller 203 .
  • the second switch 2012 connects one of the clock interfaces (CLK+) of the second memory card controller 2022, the command and response multiplexing interface (CMD) of the first memory card controller 2021 and the programming voltage/input interface of the SIM card controller 203 (VPP), the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11, and the second switch 2012 is used to connect the fifth elastic piece 11e and the clock interface (CLK+) of the second memory card controller 2022, or conduct The command and response multiplexing interface (CMD) of the fifth elastic piece 11 e and the first memory card controller 2021 , or conduction between the fifth elastic piece 11 e and the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • CMD command and response multiplexing interface
  • the third switch 2013 connects another data interface (such as RX+) of the second memory card controller 2022, another data interface (such as DATA0) of the first memory card controller 2021 and the reset interface (RST) of the SIM card controller 203 , the third switch 2013 is also connected to the sixth elastic piece 11f of the card connector 11, and the third switch 2013 is used to connect the sixth elastic piece 11f to the data interface (such as RX+) of the second memory card controller 2022, or to conduct the sixth
  • the elastic piece 11f is connected to the data interface (such as DATA0 ) of the first memory card controller 2021 , or the sixth elastic piece 11f is connected to the reset interface (RST) of the SIM card controller 203 .
  • the fourth switch 2014 is connected to the clock interface (CLK) of the first memory card controller 2021 and the clock interface (CLK) of the SIM card controller 203, and the fourth switch 2014 is also connected to the fourth elastic piece 11d of the card connector 11, and the fourth switch 2014 is used for conducting the clock interface (CLK) of the third elastic piece 11c and the first memory card controller 2021 , or conducting the clock interface (CLK) of the fourth elastic piece 11d and the SIM card controller 203 .
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the other data interface of the card connector 11.
  • the ninth elastic piece 11i, the fifth switch 2015 is used to conduct the data interface (such as TX+) between the ninth elastic piece 11i and the second memory card controller 2022, or conduct the data of the ninth elastic piece 11i and the first memory card controller 2021 interface (eg DATA3).
  • the sixth switch 2016 connects another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 also connects the card connector 11
  • the tenth elastic piece 11j, the sixth switch 2016 is used to conduct the data interface (such as TX-) between the tenth elastic piece 11j and the second memory card controller 2022, or conduct the tenth elastic piece 11j and the first memory card controller 2021
  • the data interface (eg DATA2).
  • the second power interface ( VDD2 ) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • Another clock interface (for example, CLK ⁇ ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series.
  • the switch realizes switching between the on state and the off state, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 connects the first memory card controller 2021 to the card connector 11, and the first NM card 4 is electrically connected to the card connector 11.
  • the memory card controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3 ), the clock signal (CLK) and the command and response signal (CMD), the processor 20 of the electronic device 100 passes through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11, and the first NM card 4. Transmission of the power signal (VCC) and the ground signal (GND), the first NM card 4 communicates with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a to the third elastic piece 11c, the fifth elastic piece 11e, the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 passes through the eighth shrapnel of the card connector 11 11h and the seventh elastic piece 11g transmit the first power signal ( VDD1 ) and the ground signal ( VSS ) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the interface controller 201 makes adaptive adjustments, and the interface controller 201 is also used to transmit the detection signal (C/D) on the second NM card. 5 When inserting into the electronic device 100, connect the detection interface (C/D) of the second memory card controller 2022 and the fourth elastic piece 11d.
  • the interface controller 201 makes adaptive adjustments, and the interface control The switch 201 is also used to connect the clock interface (eg CLK-) of the second memory card controller 2022 and the fourth elastic piece 11d when the second NM card 5 is inserted into the electronic device 100 .
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP), and the second switch 2012 connects one of the clock interfaces (CLK+) of the second memory card controller 2022 to the command of the first memory card controller 2021.
  • the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11.
  • the second signal arrangement manner of the second NM card 5 using the PCIe interface protocol is illustrated below with an example.
  • FIG. 36 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments
  • FIG. 37 is a partial circuit diagram of the electronic device 100 shown in FIG. 1 in other embodiments.
  • Schematic diagram, FIG. 38 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the main difference between the second NM card 5 shown in Figure 36 and the second NM card 5 shown in Figure 33 is that the first gold finger 521 of the second NM card 5 is used to transmit a clock signal (such as CLK-), and the second gold finger 522 is used to transmit the second power signal (VDD2). That is, the signals transmitted by the first gold finger 521 and the second gold finger 522 of the second NM card 5 shown in FIG. 36 and the second NM card 5 shown in FIG. 33 are interchanged. Wherein, the clock signals transmitted by the first gold finger 521 and the fifth gold finger 525 can be interchanged.
  • a clock signal such as CLK-
  • VDD2 second power signal
  • the fourth gold finger 524 adjacent to the second gold finger 522 is suspended in the air, since the fourth gold finger 524 does not perform signal transmission, the fourth gold finger 524 does not The circuit of the second NM card 5 will be burnt due to a short circuit with the second gold finger 522, which improves the reliability of the second NM card 5, and the fourth gold finger 524 of the second NM card 5 does not need to be electrically connected to withstand high voltage circuit or protection switch, the cost of the second NM card 5 is relatively low.
  • the first gold finger 521 may also be suspended, and the fourth gold finger 524 is used to transmit a clock signal (eg, CLK-).
  • the main difference between the electronic device 100 shown in FIG. 37 and the electronic device 100 shown in FIG. 34 is that the second power interface (VDD2) of the second memory card controller 2022 is electrically connected to the first elastic piece 11a of the card connector 11, and one of the clock The interface (such as CLK-) is electrically connected to the second elastic piece 11 b of the card connector 11 .
  • VDD2 the second power interface
  • CLK- clock The interface
  • the main difference between the electronic device 100 shown in FIG. 38 and the electronic device 100 shown in FIG. 35 is that the second power interface (VDD2) of the second memory card controller 2022 is electrically connected to the first elastic piece 11a of the card connector 11, and one of the clock The interface (such as CLK-) is electrically connected to the second elastic piece 11 b of the card connector 11 .
  • VDD2 the second power interface
  • CLK- clock The interface
  • the following illustrates the third signal arrangement of the second NM card 5 using the PCIe interface protocol as an example.
  • FIG. 39 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments.
  • the second gold finger 522 , the sixth gold finger 526 , the ninth gold finger 529 and the tenth gold finger 5210 of the second NM card 5 are used to transmit data signals.
  • the second golden finger 522 is used to transmit data signals (RX-)
  • the sixth golden finger 526 is used to transmit data signals (RX+)
  • the ninth golden finger 529 is used to transmit data signals (TX+)
  • the finger 5210 is used to transmit a data signal (TX-), which is described as an example.
  • the data signals transmitted by the second gold finger 522 , the sixth gold finger 526 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other.
  • the data signals transmitted by the second gold finger 522 and the sixth gold finger 526 are exchanged, and the data signals transmitted by the ninth gold finger 529 and the tenth gold finger 5210 are exchanged.
  • Other embodiments will not be repeated here.
  • the fourth gold finger 524 and the fifth gold finger 525 are used to transmit clock signals.
  • the fourth gold finger 524 is used to transmit the clock signal (CLK ⁇ )
  • the fifth gold finger 525 is used to transmit the clock signal (CLK+) as an example for illustration.
  • the clock signals transmitted by the fourth gold finger 524 and the fifth gold finger 525 can be exchanged with each other.
  • the first gold finger 521 is used to transmit the second power signal (VDD2); the seventh gold finger 527 is used to transmit the ground signal (VSS); the eighth gold finger 528 is used to transmit the first power signal (VDD1).
  • the third golden finger 523 is suspended in the air.
  • Table 7 is Table 5 of the corresponding relationship between multiple shrapnels of the card connector 11 and multiple gold fingers of the Nano SIM card 3, the first NM card 4, and the second NM card 5 and their transmission signals.
  • the first elastic pieces 11a to the tenth elastic pieces 11j of the card connector 11 resist and electrically connect the first golden fingers 521 to the tenth golden fingers 521 of the second NM card 5 in one-to-one correspondence.
  • the gold finger 5210, the third gold finger 523 to the eighth gold finger 528 of the second NM card 5 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the third gold finger 523 to the tenth gold finger 5210 of the second NM card 5 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the second NM card 5 arranges the second power signal (VDD2) required by the PCIe protocol on the first gold finger 521, because the first gold finger 521 of the second NM card 5 is connected to the Nano SIM card 3 There is no position correspondence with all gold fingers of the first NM card 4, the first gold finger 521 of the second NM card 5 does not need to be the same shrapnel as the multiplex card connector 11 of the Nano SIM card 3 and the first NM card 4, Avoid the second power supply signal (VDD2) sharing the same shrapnel with the data signals of the Nano SIM card 3 and the first NM card 4, so as to reduce the time when the Nano SIM card 3 and the first NM card 4 are inserted into the electronic device 100 and connected to the card connector 11.
  • VDD2 the second power signal
  • the risk of being burned out by the second power supply signal (VDD2), the reliability of the electronic device 100 being compatible with the Nano SIM card 3 and the first NM card 4 and the second NM card 5 is relatively high.
  • the first NM card 4 and the Nano SIM card 3 do not need to deploy a high-voltage resistant design for preventing the circuit from being burned by the second power signal (VDD2), which can reduce costs.
  • the second NM card 5 arranges one of the high-speed data signals (such as RX-) on the second gold finger 522, because the second gold finger 522 of the second NM card 5 is connected to the Nano SIM card 3 and the first NM card 4 All gold fingers have no position correspondence, so the second elastic piece 11b is connected to the high-speed data interface of the processor 20 of the electronic device 100 without connecting to the low-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5, Nano The SIM card 3 is still the first NM card 4, and the processor 20 does not need to switch the interface electrically connected to the second shrapnel 11b, thereby reducing the difficulty of switching between the high-speed data interface and the low-speed data interface, simplifying the circuit of the processor 20, and reducing the design difficulty and cost.
  • the high-speed data signals such as RX-
  • the seventh gold finger 527 of the second NM card 5 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4, when the electronic device 100 is inserted, it is consistent with the position of the card.
  • the seventh elastic piece 11g of the connector 11 is resisted and electrically connected, the seventh gold finger 527 of the second NM card 5, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for transmission ground signal (respectively VSS/GND/GND), so the processor 20 of the electronic device 100 can be electrically connected to the seventh elastic piece 11g of the card connector 11 through the same ground interface, no matter the information card inserted in the electronic device 100 is the second The NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the seventh shrapnel 11g, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • VSS/GND/GND transmission ground signal
  • the eighth gold finger 528 of the second NM card 5 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the eighth spring piece 11h of the device 11 is resisted and electrically connected, and the eighth gold finger 528 of the second NM card 5, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used for Transmit power supply signals (respectively VDD1/VCC/VCC), so the processor 20 of the electronic device 100 can be electrically connected to the eighth shrapnel 11h of the card connector 11 through the same power interface, regardless of whether the information card inserted in the electronic device 100 is the first For the second NM card 5, the Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the eighth shrapnel 11h, thereby simplifying the circuit of the processor 20 and reducing
  • the fourth gold finger 524 of the second NM card 5 corresponds to the position of the second gold finger 322 of the Nano SIM card 3, corresponds to the position of the second gold finger 422 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the fourth elastic piece 11d of the device 11 is resisted and electrically connected, the fourth gold finger 524 of the second NM card 5 is used to transmit a clock signal (such as CLK-), and the second gold finger 322 of the Nano SIM card 3 is used to transmit a clock signal (CLK), the second golden finger 422 of the first NM card 4 is used to transmit the clock signal (CLK), and the second NM card 5, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the fourth shrapnel 11d.
  • the processor 20 can provide clock signals of different frequencies through the fourth elastic piece 11d without switching data interface signals, thereby simplifying the circuit of the processor 20 and reducing design complexity and cost.
  • the processor 20 can provide the same clock signal for the three cards, and no longer need Switching further simplifies the design difficulty of the processor 20, for example, a unified clock frequency of 20MHz.
  • the fifth gold finger 525 of the second NM card 5 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is all connected to the card connector when inserted into the electronic device 100.
  • the fifth elastic piece 11e of 11 is resisted and electrically connected, the fifth gold finger 525 of the second NM card 5 is used to transmit another clock signal (such as CLK+), and the third gold finger 323 of the Nano SIM card 3 is used to transmit the programming voltage/ Input signal (VPP), the first gold finger 421 of the first NM card 4 is used for transmitting command and response signal (CMD), the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the first Five shrapnel 11e.
  • CLK+ clock signal
  • CMD command and response signal
  • the sixth gold finger 526 of the second NM card 5 corresponds to the position of the fourth gold finger 324 of the Nano SIM card 3, and corresponds to the position of the fourth gold finger 424 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the sixth elastic piece 11f of the device 11 is resisted and electrically connected, the sixth gold finger 526 of the second NM card 5 is used to transmit another data signal (such as RX+), and the fourth gold finger 324 of the Nano SIM card 3 is used to transmit reset Signal (RST), the fourth golden finger 424 of the first NM card 4 is used to transmit data signals (such as DATA0), the second NM card 5, Nano SIM card 3 and the first NM card 4 can time-division multiplex the sixth shrapnel 11f.
  • the ninth gold finger 529 of the second NM card 5 corresponds to the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, it is all abutted against and electrically connected to the ninth elastic piece 11i of the card connector 11.
  • the ninth gold finger 529 of the NM card 5 is used to transmit data signals (such as TX+), the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3), the second NM card 5 and the first NM card 4.
  • the ninth shrapnel 11i can be time-divisionally multiplexed.
  • the tenth gold finger 5210 of the second NM card 5 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they all resist and electrically connect with the tenth elastic piece 11j of the card connector 11.
  • the tenth gold finger 5210 of the NM card 5 is used to transmit data signals (such as TX-), the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2), the second NM card 5 and the first NM card
  • the card 4 can time-division multiplex the tenth shrapnel 11j.
  • the ninth shrapnel 11i and the tenth shrapnel 11j of the card connector 11 can also be unique to the second NM card 5.
  • the shrapnel, the ninth shrapnel 11i and the tenth shrapnel 11j are all connected to the high-speed data interface, no matter whether the information card inserted in the electronic device 100 is the second NM card 5 or the Nano SIM card 3, the processor 20 does not need to switch between the ninth shrapnel 11i and the tenth shrapnel 11i.
  • the tenth shrapnel 11j is electrically connected to the interface, so that the circuit of the processor 20 can be simplified, and the design difficulty and cost can be reduced.
  • the third gold finger 523 adjacent to the first gold finger 521 can be set in the air without signal transmission, the third gold finger 523 will not be short-circuited with the first gold finger 521, causing the second NM card 5
  • the circuit is burned, which improves the reliability of the second NM card 5, and the third gold finger 523 of the second NM card 5 does not need to be electrically connected to a high-voltage circuit or a protection switch, and the cost of the second NM card 5 is relatively low.
  • the tenth golden finger 5210 may be electrically connected to a high voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the third gold finger 523 may also be used to transmit the detection signal (C/D).
  • the third golden finger 523 can also be electrically connected to a high voltage circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 52 of the second NM card 5 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 511 of the second NM card 5 .
  • the third gold finger 523 of the second NM card 5 can also be used to transmit a clock signal (eg CLK-), and the fourth gold finger 524 is suspended or used to transmit a detection signal (C/D).
  • the third golden finger 523 can be electrically connected to the high-voltage resistant circuit or the protection switch, so as to prevent the third golden finger 523 from being short-circuited by the shrapnel and cause the circuit of the second NM card 5 to be burned, thereby improving the reliability of the second NM card 5 .
  • FIG. 40 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 39 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece 11a to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 includes four data interfaces, two clock interfaces and a second power supply interface, the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the two clock interfaces are used for The clock signal (CLK+, CLK-) is transmitted, and the second power interface is used for transmitting the second power signal (VDD2).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 also includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VDD1), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 as an example, and are respectively marked as power and ground.
  • the interface controller 201 is used for connecting the SIM card controller 203 and the card connector 11 , or connecting the second memory card controller 2022 and the card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 and a third switch 2013 .
  • the first switch 2011 is connected to a clock interface (for example CLK-) of the second memory card controller 2022 and the clock interface (CLK) of the SIM card controller 203, and the first switch 2011 is also connected to the fourth elastic piece 11d of the card connector 11, The first switch 2011 is used to connect the fourth elastic piece 11d to the clock interface (eg CLK-) of the second memory card controller 2022 , or to connect the fourth elastic piece 11d to the clock interface (CLK) of the SIM card controller 203 .
  • CLK- clock interface
  • CLK clock interface
  • the second switch 2012 connects another clock interface (for example CLK+) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the second switch 2012 also connects the fifth pin of the card connector 11.
  • the elastic piece 11e, the second switch 2012 is used to conduct the clock interface (such as CLK+) of the fifth elastic piece 11e and the second memory card controller 2022, or conduct the programming voltage/input interface of the fifth elastic piece 11e and the SIM card controller 203 (VPP).
  • the third switch 2013 is connected to a data interface (such as RX+) of the second memory card controller 2022 and the reset interface (RST) of the SIM card controller 203, and the third switch 2013 is also connected to the sixth elastic piece 11f of the card connector 11.
  • the third switch 2013 is used to connect the sixth elastic piece 11f to the data interface (for example, RX+) of the second memory card controller 2022 , or to connect the sixth elastic piece 11f to the reset interface (RST) of the SIM card controller 203 .
  • the second power interface ( VDD2 ) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • Another data interface (for example, RX ⁇ ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece 11i of the card connector 11 through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece 11j of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the data interface (DATA) of the SIM card controller 203 is electrically connected to the third elastic piece 11 c of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to keep the guide In the ON state, the interface controller 201 may also be connected with a switch in series to switch between the ON state and the OFF state through the switch, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a, the second elastic piece 11b, the third elastic piece 11c to the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 passes through the eighth shrapnel of the card connector 11 11h and the seventh elastic piece 11g transmit the first power signal ( VDD1 ) and the ground signal ( VSS ) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the interface controller 201 makes adaptive adjustments, and the interface controller 201 is also used to transmit the detection signal (C/D) on the second NM card. 5
  • the interface controller 201 When inserting into the electronic device 100, connect the detection interface (C/D) of the second memory card controller 2022 with the third elastic piece 11c.
  • the interface controller 201 makes adaptive adjustments, and the interface control The device 201 is also used to connect the clock interface (eg CLK-) of the second memory card controller 2022 and the third elastic piece 11c when the second NM card 5 is inserted into the electronic device 100 .
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP)
  • the interface controller 201 may not include the second switch 2012
  • another clock interface (such as CLK+) of the second memory card controller 2022 passes through the interface
  • the controller 201 is electrically connected to the fifth elastic piece 11 e of the card connector 11 .
  • FIG. 41 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 5, and the signal arrangement of the card interface 52 of the second NM card 5 is shown in FIG. 39 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the first elastic piece 11 a to the tenth elastic piece 11 j of the card connector 11 of the card holder assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector 11, or connect the first memory card controller 2021 with the card connector 11, or connect the second memory card controller 2022 with the card connector 11.
  • card connector 11 .
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to the clock interface (CLK) of the first memory card controller 2021, the clock interface (CLK) of the SIM card controller 203, and one of the clock interfaces (such as CLK-) of the second memory card controller 2022.
  • the four switch 2014 is also connected to the fourth elastic piece 11d of the card connector 11, and the fourth switch 2014 is used to connect the third elastic piece 11c to the clock interface (CLK) of the first memory card controller 2021, or to connect the fourth elastic piece 11d to the clock interface (CLK) of the first memory card controller 2021.
  • the clock interface (CLK) of the SIM card controller 203 or connect the clock interface (for example, CLK-) of the second memory card controller 2022 with the fourth elastic piece 11d.
  • the second switch 2012 is connected to another clock interface (CLK+) of the second memory card controller 2022, the command and response multiplexing interface (CMD) of the first memory card controller 2021 and the programming voltage/input interface of the SIM card controller 203 (VPP), the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11, and the second switch 2012 is used to connect the fifth elastic piece 11e and the clock interface (CLK+) of the second memory card controller 2022, or conduct The command and response multiplexing interface (CMD) of the fifth elastic piece 11 e and the first memory card controller 2021 , or conduction between the fifth elastic piece 11 e and the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • CLK+ clock interface
  • VPP programming voltage/input interface
  • the third switch 2013 connects a data interface (such as RX+) of the second memory card controller 2022, another data interface (such as DATA0) of the first memory card controller 2021 and a reset interface (RST) of the SIM card controller 203,
  • the third switch 2013 is also connected to the sixth elastic piece 11f of the card connector 11, and the third switch 2013 is used to connect the sixth elastic piece 11f to the data interface (such as RX+) of the second memory card controller 2022, or to conduct the sixth elastic piece 11f is connected to the data interface (for example, DATA0 ) of the first memory card controller 2021 , or is connected to the reset interface (RST) of the sixth elastic piece 11f and the SIM card controller 203 .
  • the fourth switch 2014 is connected to a data interface (such as DATA1) of the first memory card controller 2021 and the data interface (DATA) of the SIM card controller 203, and the first switch 2011 is also connected to the third elastic piece 11c of the card connector 11.
  • a switch 2011 is used to connect the third elastic piece 11c with the data interface (eg DATA1 ) of the first memory card controller 2021 , or connect the third elastic piece 11c with the data interface (DATA) of the SIM card controller 203 .
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the other data interface of the card connector 11.
  • the ninth elastic piece 11i, the fifth switch 2015 is used to conduct the data interface (such as TX+) between the ninth elastic piece 11i and the second memory card controller 2022, or conduct the data of the ninth elastic piece 11i and the first memory card controller 2021 interface (eg DATA3).
  • the sixth switch 2016 connects another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 also connects the card connector 11
  • the tenth elastic piece 11j, the sixth switch 2016 is used to conduct the data interface (such as TX-) between the tenth elastic piece 11j and the second memory card controller 2022, or conduct the tenth elastic piece 11j and the first memory card controller 2021
  • the data interface (such as DATA2).
  • the second power interface ( VDD2 ) of the second memory card controller 2022 is electrically connected to the first elastic piece 11 a of the card connector 11 through the interface controller 201 .
  • Another data interface (for example, RX ⁇ ) of the second memory card controller 2022 is electrically connected to the second elastic piece 11 b of the card connector 11 through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece 11 h of the card connector 11 through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece 11 g of the card connector 11 through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series.
  • the switch realizes switching between the on state and the off state, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector 11,
  • the SIM card controller 203 carries out data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) between the Nano SIM card 3 through the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11.
  • the transmission of the reset signal (RST) the processor 20 of the electronic device 100 carries out the power signal (VCC) and the ground signal (GND) between the Nano SIM card 3 through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11.
  • the Nano SIM card 3 communicates with the electronic device 100.
  • the interface controller 201 connects the first memory card controller 2021 to the card connector 11, and the first NM card 4 is electrically connected to the card connector 11.
  • the memory card controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3 ), the clock signal (CLK) and the command and response signal (CMD), the processor 20 of the electronic device 100 passes through the eighth elastic piece 11h and the seventh elastic piece 11g of the card connector 11, and the first NM card 4. Transmission of the power signal (VCC) and the ground signal (GND), the first NM card 4 communicates with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector 11, and the second NM card 5 is electrically connected to the card connector 11.
  • the memory card controller 2022 communicates with the second NM card 5 via the first elastic piece 11a to the third elastic piece 11c, the fifth elastic piece 11e, the sixth elastic piece 11f, the ninth elastic piece 11i and the tenth elastic piece 11j of the card connector 11.
  • the processor 20 of the electronic device 100 passes through the eighth shrapnel of the card connector 11 11h and the seventh elastic piece 11g transmit the first power signal ( VDD1 ) and the ground signal ( VSS ) with the second NM card 5 , and the second NM card 5 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 5.
  • the interface controller 201 makes adaptive adjustments, and the interface controller 201 is also used to transmit the detection signal (C/D) on the second NM card. 5
  • the interface controller 201 When inserting into the electronic device 100, connect the detection interface (C/D) of the second memory card controller 2022 with the third elastic piece 11c.
  • the interface controller 201 makes adaptive adjustments, and the interface control The device 201 is also used to connect the clock interface (eg CLK-) of the second memory card controller 2022 and the third elastic piece 11c when the second NM card 5 is inserted into the electronic device 100 .
  • the programming voltage/input signal may not be supported, so as to reduce the design difficulty of the processor 20 .
  • the SIM card controller 203 may not include a programming voltage/input interface (VPP), and the second switch 2012 connects one of the clock interfaces (CLK+) of the second memory card controller 2022 to the command of the first memory card controller 2021.
  • the second switch 2012 is also connected to the fifth elastic piece 11e of the card connector 11.
  • the following illustrates the fourth signal arrangement mode of the second NM card 5 using the PCIe interface protocol as an example.
  • FIG. 42 is a schematic diagram of the second NM card 5 shown in FIG. 17 in other embodiments
  • FIG. 43 is a partial circuit diagram of the electronic device 100 shown in FIG. 1 in other embodiments.
  • Schematic diagram, FIG. 44 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the main difference between the second NM card 5 shown in Figure 42 and the second NM card 5 shown in Figure 39 is that the first gold finger 521 of the second NM card 5 is used to transmit data signals (such as RX-), and the second gold finger 522 is used to transmit the second power signal (VDD2). That is, the signals transmitted by the first gold finger 521 and the second gold finger 522 of the second NM card 5 shown in FIG. 42 and the second NM card 5 shown in FIG. 39 are interchanged. Wherein, the data signals transmitted by the first gold finger 521 , the sixth gold finger 526 , the ninth gold finger 529 and the tenth gold finger 5210 can be exchanged with each other. For other solution contents of the second NM card 5 shown in FIG. 42 , reference may be made to the related description of the second NM card 5 shown in FIG. 39 , which will not be repeated here.
  • the second power interface ( VDD2 ) is electrically connected to the second elastic piece 11 b of the card connector 11 .
  • VDD2 the second power interface
  • the second power interface ( VDD2 ) is electrically connected to the second elastic piece 11 b of the card connector 11 .
  • VDD2 the second power interface
  • the second NM card 5 may also adopt the SD interface protocol.
  • the difference between the second NM card 5 using the SD interface protocol and the second NM card 5 using the PCIe interface protocol is that the data signals transmitted by the second NM card 5 are D0+, D0-, D1+, D1-.
  • the electronic device 100 that is compatible with the second NM card 5 using the PCIe interface protocol can also support the second NM card 5 using the SD interface protocol, and the data interface of the second memory card controller 2022 is adaptively changed.
  • the present application also provides a second NM card including at least eight gold fingers, and the second NM card can adopt the UFS protocol.
  • the card interface of the second NM card can be the same as or similar to the card interface 42 structure of the first NM card 4, and the second NM card can be connected with the card connector (such as the card connector shown in Figure 5) that can be plugged into the first NM card 4. 11) Connect.
  • the card connector such as the card connector shown in Figure 5
  • FIG. 45 is a schematic structural diagram of another embodiment of the second NM card provided by the embodiment of the present application.
  • the second NM card 6 of this embodiment can include most of the technical features of the second NM card 5 shown in Figure 17 and other drawings, and the difference between the two is mainly explained below:
  • the card body 61 of the second NM card 6 includes a first side 6111, a second side 6112, a third side 6113, and a fourth side 6114, and the first side 6111 and the third side 6113 are arranged opposite and along the second side.
  • the NM card 6 extends along the length direction, and the second side 6112 and the fourth side 6114 are oppositely arranged and extend along the width direction of the second NM card 6 .
  • the distance between the second side 6112 and the fourth side 6114 is greater than the distance between the first side 6111 and the third side 6113 .
  • the first side 6111 and the third side 6113 are long sides, and the second side 6112 and the fourth side 6114 are short sides.
  • the first side 6111 and the third side 6113 may be arranged parallel or approximately parallel
  • the second side 6112 and the fourth side 6114 may be arranged parallel or approximately parallel.
  • one corner of the card body 61 of the second NM card 6 is a cut corner, and the cut corner is arranged between the first side 6111 and the second side 6112 .
  • the cut corner forms a cut edge 6115 which forms an obtuse angle with the first side 6111 and forms an obtuse angle with the second side 6112 .
  • a circular arc transition structure or a chamfer transition structure may be provided between adjacent sides of the card body 61 (including the first side 6111 , the second side 6112 , the third side 6113 , the fourth side 6114 and the cut side 6115 ).
  • the card body 61 of the second NM card 6 may not be provided with the above-mentioned cut corners, which is not strictly limited in the present application.
  • the card interface 62 of the second NM card 6 includes at least eight gold fingers, for example, includes a first gold finger 621 to an eighth gold finger 628, and the first gold finger 621 to the eighth gold finger 628 are arranged in an array,
  • the first gold fingers 621 to the eighth gold fingers 628 are arranged along the length direction of the second NM card 6 into a first row of gold fingers and a second row of gold fingers, and the first row of gold fingers includes gold fingers along the width direction of the second NM card 6
  • the fourth gold finger 624 , the sixth gold finger 626 and the eighth gold finger 628 is arranged in an array,
  • the first gold fingers 621 to the eighth gold fingers 628 are arranged along the length direction of the second NM card 6 into a first row of gold fingers and a second row of gold fingers
  • the first row of gold fingers includes gold fingers along
  • the four gold fingers of the first row of gold fingers (621, 623, 625, 627) correspond to the four gold fingers of the second row of gold fingers (622, 624, 626, 628) one by one, and they are arranged in pairs. That is, they are arranged into a first row of gold fingers (621, 622), a second row of gold fingers (623, 624), a third row of gold fingers (625, 626), and a fourth row of gold fingers (627, 628). That is, the first golden fingers 621 to the eighth golden fingers 628 are arranged in two rows and four rows.
  • the first row of gold fingers (621, 623, 625, 627) is located between the second side 6112 and the second row of gold fingers (622, 624, 626, 628), that is, the first row of gold fingers (621, 623, 625, 627) are arranged near the second side 6112, and the second row of golden fingers (622, 624, 626, 628) are arranged near the fourth side 6114.
  • the first gold finger 621 is located between the first side 6111 and the third gold finger 623
  • the second gold finger 622 is located between the first side 6111 and the fourth gold finger 614 . That is, the first row of gold fingers (621, 622) is arranged close to the first side 6111, and the fourth row of gold fingers (627, 628) is arranged close to the third side 6113. At this time, the first gold finger 621 is closer to the cut edge 6115 of the card body 61 than other gold fingers.
  • the distance between the centers of the first row of gold fingers (621, 622) and the second row of gold fingers (623, 624) is greater than the center distance between the third row of gold fingers (625, 626) and the fourth row of gold fingers (627, 628) Spacing
  • the center distance between the second row of gold fingers (623, 624) and the third row of gold fingers (625, 626) is greater than the center distance between the third row of gold fingers (625, 626) and the fourth row of gold fingers (627, 628) spacing.
  • the distance between the centers of the first row of gold fingers (621, 622) and the second row of gold fingers (623, 624) and the distance between the second row of gold fingers (623, 624) and the third row of gold fingers (625, 626) can be within the range of 1.5mm to 2.8mm
  • the distance between the centers of the third row of gold fingers (625, 626) and the fourth row of gold fingers (627, 628) may be within the range of 1.0mm to 1.7mm.
  • the size of the card body 61 of the second NM card 6 can be identical with the size of the card body 31 of Nano SIM card 3.
  • the second NM card 6 can support the UFS protocol and realize the basic performance of the high-speed card.
  • the second NM card 6 in this embodiment reference may be made to the relevant description of the second NM card 5 shown in FIG. 17 and other drawings, and details are not repeated here.
  • the golden finger arrangement structure of the second NM card 6 is the same as or similar to that of the first NM card 4, the second NM card 6 can be compatible with the first NM card 4.
  • the connector realizes the structural connection and the electrical connection, thereby reducing the wiring modification of the circuit lines of the electronic device 100 , and reducing modification difficulty and cost.
  • the first gold finger 621 , the fourth gold finger 624 , the seventh gold finger 627 and the eighth gold finger 628 of the second NM card 6 are used to transmit data signals (RX+, RX-, TX+, TX-).
  • the first gold finger 621 is used to transmit data signals (RX-)
  • the fourth gold finger 624 is used to transmit data signals (RX+)
  • the seventh gold finger 627 is used to transmit data signals (TX+)
  • the finger 628 is used to transmit the data signal (TX-), which is described as an example.
  • the data signals transmitted by the first gold finger 621 , the fourth gold finger 624 , the seventh gold finger 627 and the eighth gold finger 628 can be exchanged with each other.
  • the data signals transmitted by the first gold finger 621 and the fourth gold finger 624 are exchanged, and the data signals transmitted by the seventh gold finger 627 and the eighth gold finger 628 are exchanged.
  • the second gold finger 622 is used to transmit the reference clock signal (RCLK);
  • the third gold finger 623 is used to transmit the second power signal (VCCQ);
  • the fifth gold finger 625 is used to transmit the ground signal (VSS);
  • the sixth gold finger 626 is used to transmit the first power signal (VCC).
  • Table 8 is a plurality of shrapnels of another card connector and a plurality of gold fingers of the Nano SIM card 3, the first NM card 4 and the second NM card 6 and their transmission signals Correspondence Table 1.
  • the second NM card 6 is connected to a card connector compatible with the first NM card 4 and has eight elastic pieces, the eight elastic pieces of the card connector are supported one by one and electrically connected to the first gold of the second NM card 6.
  • the finger 621 to the eighth gold finger 628, the first gold finger 621 to the sixth gold finger 626 of the second NM card 6 are in one-to-one correspondence with the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 .
  • the positions of the first elastic piece to the eighth elastic piece of the above-mentioned card connector with eight elastic pieces correspond to the positions of the third elastic piece to the tenth elastic piece of the card connector shown in FIG. 5 in one-to-one correspondence.
  • the positions of the first gold finger 621 to the eighth gold finger 628 of the second NM card 6 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • the fifth gold finger 625 of the second NM card 6 corresponds to the position of the fifth gold finger 325 of the Nano SIM card 3, and corresponds to the position of the fifth gold finger 425 of the first NM card 4.
  • the fifth gold finger 625 of the second NM card 6, the fifth gold finger 325 of the Nano SIM card 3, and the fifth gold finger 425 of the first NM card 4 are all used for the transmission ground.
  • the processor 20 of the electronic device 100 can electrically connect the fifth shrapnel of the card connector through the same ground interface, no matter the information card inserted in the electronic device 100 is the second NM card 6 , Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the fifth shrapnel, thereby simplifying the circuit of the processor 20 and reducing design difficulty and cost.
  • the sixth gold finger 626 of the second NM card 6 corresponds to the position of the sixth gold finger 326 of the Nano SIM card 3, corresponds to the position of the sixth gold finger 426 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the sixth gold finger 626 of the second NM card 6, the sixth gold finger 326 of the Nano SIM card 3, and the sixth gold finger 426 of the first NM card 4 are all used to transmit power signal (respectively VCC/VCC/VCC), so the processor 20 of the electronic device 100 can electrically connect the sixth shrapnel of the card connector through the same power interface, no matter the information card inserted in the electronic device 100 is the second NM card 6 , Nano SIM card 3 or the first NM card 4, the processor 20 does not need to switch the interface electrically connected to the sixth shrapnel, thereby simplifying the circuit of the processor 20 and reducing design difficulty and cost.
  • the first gold finger 621 of the second NM card 6 corresponds to the position of the first gold finger 321 of the Nano SIM card 3, corresponds to the position of the first gold finger 421 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the first shrapnel of the device is resisted and electrically connected, the first gold finger 621 of the second NM card 6 is used to transmit data signals (such as RX-), the first gold finger 321 of the Nano SIM card 3 is used for data signals (DATA) , the first golden finger 421 of the first NM card 4 is used to transmit data signals (such as DATA1), and the second NM card 6, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the first shrapnel.
  • data signals such as RX-
  • the first gold finger 321 of the Nano SIM card 3 is used for data signals (DATA)
  • DATA data signals
  • the first golden finger 421 of the first NM card 4 is used to transmit data signals (such as DATA1)
  • the second NM card 6 the Nano SIM card 3 and the first NM card 4 can time-division multiplex the first shrapnel.
  • the second gold finger 622 of the second NM card 6 corresponds to the position of the second gold finger 322 of the Nano SIM card 3, corresponds to the position of the second gold finger 422 of the first NM card 4, and is connected to the card when inserted into the electronic device 100.
  • the second shrapnel of the device is resisted and electrically connected, the second gold finger 622 of the second NM card 6 is used to transmit the reference clock signal (RCLK), and the second gold finger 322 of the Nano SIM card 3 is used to transmit the clock signal (CLK) , the second gold finger 422 of the first NM card 4 is used to transmit the clock signal (CLK), and the second NM card 6, the Nano SIM card 3 and the first NM card 4 can time-division multiplex the second shrapnel.
  • RCLK reference clock signal
  • CLK clock signal
  • CLK clock signal
  • the second gold finger 422 of the first NM card 4 is used to transmit the clock signal (CLK)
  • the second NM card 6 the Nano SIM card 3 and the first NM card 4 can time-division multiplex the second shrapnel.
  • the third gold finger 623 of the second NM card 6 corresponds to the position of the third gold finger 323 of the Nano SIM card 3, corresponds to the position of the third gold finger 423 of the first NM card 4, and is connected to the card when inserted into the electronic device 100
  • the third shrapnel of the device is resisted and electrically connected
  • the third gold finger 623 of the second NM card 6 is used to transmit the second power signal (VCCQ)
  • the third gold finger 323 of the Nano SIM card 3 is used to transmit the programming voltage/input signal (VPP)
  • the first gold finger 421 of the first NM card 4 is used to transmit command and response signal (CMD)
  • the second NM card 6, Nano SIM card 3 and the first NM card 4 can time-division multiplex the third shrapnel.
  • the seventh gold finger 627 of the second NM card 6 corresponds to the position of the seventh gold finger 427 of the first NM card 4, and when inserted into the electronic device 100, they all resist and electrically connect with the seventh elastic piece of the card connector.
  • the seventh gold finger 627 of 6 is used to transmit data signals (such as TX+)
  • the seventh gold finger 427 of the first NM card 4 is used to transmit data signals (such as DATA3)
  • the second NM card 6 and the first NM card 4 can
  • the seventh shrapnel is time-division multiplexed.
  • the eighth gold finger 628 of the second NM card 6 corresponds to the position of the eighth gold finger 428 of the first NM card 4. When inserted into the electronic device 100, they are both resisted and electrically connected to the eighth elastic piece of the card connector.
  • the eighth gold finger 628 of 6 is used to transmit data signals (such as TX-)
  • the eighth gold finger 428 of the first NM card 4 is used to transmit data signals (such as DATA2)
  • the eighth shrapnel can be reused in time division.
  • the eighth gold finger 628 of the second NM card 6 can be electrically connected to a high voltage withstand circuit or a protection switch, so as to prevent the circuit from burning out when the card interface 62 of the second NM card 6 is short-circuited.
  • the high voltage withstand circuit or the protection switch are located in the package 611 of the second NM card 6 .
  • the third The shrapnel transmits the second power signal (VCCQ) of the second NM card 6 in some usage scenarios, so it can be electrically connected to the third gold finger 323 of the Nano SIM card 3 and the third gold finger 423 of the first NM card 4.
  • VCCQ the second power signal
  • a high-voltage circuit or a protection switch is used to avoid burning out the circuit to improve the reliability of the Nano SIM card 3 and the first NM card 4.
  • FIG. 46 is a schematic diagram of some circuits of the electronic device 100 provided by the embodiment of the present application in some embodiments.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 6, and the signal arrangement of the card interface 62 of the second NM card 6 is shown in FIG. 45 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece to the eighth elastic piece of the card connector of the card socket assembly 10 .
  • the SIM card controller 203 includes a data interface, a clock interface, a programming voltage/input interface and a reset interface, the data interface is used to transmit a data signal (DATA), the clock interface is used to transmit a clock signal (CLK), and the programming voltage/input interface Used to transmit the programming voltage/input signal (VPP), and the reset interface is used to transmit the reset signal (RST).
  • the multiple interfaces of the SIM card controller 203 are identified by the signals they transmit.
  • the second memory card controller 2022 includes four data interfaces, a reference clock interface and a second power supply interface, the four data interfaces are used to transmit data signals (RX+, RX-, TX+, TX-), and the reference clock interface is used to transmit reference The clock signal (RCLK), and the second power interface is used to transmit the second power signal (VCCQ).
  • the multiple interfaces of the second memory card controller 2022 are identified by the signals they transmit.
  • the second power interface may also be independent from the second memory card controller 2022, which is not strictly limited in this embodiment of the present application.
  • the processor 20 further includes a power interface and a ground interface, the power interface is used to transmit the power signal (VCC) or the first power signal (VCC), and the ground interface is used to transmit the ground signal (GND) or the ground signal (VSS).
  • the power interface and the ground interface can be independent from the SIM card controller 203 and the second memory card controller 2022, or can be separated and integrated in the SIM card controller 203 and the second memory card controller 2022, This embodiment of the present application does not strictly limit it.
  • the power interface and the ground interface are independent from the SIM card controller 203 and the second memory card controller 2022 for illustration, and are respectively marked as power and ground.
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector, or connect the second memory card controller 2022 with the card connector.
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 and a fourth switch 2014 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022 and the data interface (DATA) of the SIM card controller 203, and the first switch 2011 is also connected to the first shrapnel of the card connector.
  • the switch 2011 is used to connect the data interface (eg, RX-) between the first elastic piece and the second memory card controller 2022 , or connect the first elastic piece to the data interface (DATA) of the SIM card controller 203 .
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022 and the clock interface (CLK) of the SIM card controller 203, and the second switch 2012 is also connected to the second shrapnel of the card connector.
  • the second switch 2012 It is used to connect the second elastic piece to the reference clock interface (RCLK) of the second memory card controller 2022 , or to connect the second elastic piece to the clock interface (CLK) of the SIM card controller 203 .
  • the third switch 2013 is connected to the second power interface (VCCQ) of the second memory card controller 2022 and the programming voltage/input interface (VPP) of the SIM card controller 203, and the third switch 2013 is also connected to the third shrapnel of the card connector, The third switch 2013 is used to connect the third elastic piece to the second power interface (VCCQ) of the second memory card controller 2022 , or to connect the third elastic piece to the programming voltage/input interface (VPP) of the SIM card controller 203 .
  • the fourth switch 2014 is connected to another data interface (such as RX+) of the second memory card controller 2022 and the reset interface (RST) of the SIM card controller 203, and the fourth switch 2014 is also connected to the fourth shrapnel of the card connector.
  • the switch 2014 is used to connect the fourth elastic piece with the data interface (eg RX+) of the second memory card controller 2022 , or connect the fourth elastic piece with the reset interface (RST) of the SIM card controller 203 .
  • Another data interface (eg TX+) of the second memory card controller 2022 is electrically connected to the ninth elastic piece of the card connector through the interface controller 201 .
  • Another data interface (eg TX-) of the second memory card controller 2022 is electrically connected to the tenth elastic piece of the card connector through the interface controller 201 .
  • the power interface of the processor 20 is electrically connected to the eighth elastic piece of the card connector through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the seventh elastic piece of the card connector through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain the conduction state, and the interface controller 201 can also be connected in series with a switch to achieve the conduction state through the switch.
  • the embodiment of the present application does not strictly limit the switching between the cut-off state and the cut-off state.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector, and the SIM card
  • the controller 203 performs data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) and reset signal (RST) with the Nano SIM card 3 via the first shrapnel to the fourth shrapnel of the card connector.
  • DATA data signal
  • CLK clock signal
  • VPP transmission programming voltage/input signal
  • RST reset signal
  • the processor 20 of the electronic device 100 transmits the power signal (VCC) and the ground signal (GND) with the Nano SIM card 3 through the sixth shrapnel and the fifth shrapnel of the card connector, and the Nano SIM card 3 Realize communication with the electronic device 100 .
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector, and the second memory card
  • the controller 2022 performs data signals (RX+, RX-, TX+, TX-) and reference clock signals with the second NM card 6 via the first to fourth elastic pieces, seventh elastic pieces, and eighth elastic pieces of the card connector. (RCLK) and the transmission of the second power signal (VCCQ), the processor 20 of the electronic device 100 performs the first power signal (VCC) with the second NM card 6 through the sixth elastic piece and the fifth elastic piece of the card connector. and ground signal (VSS), the second NM card 6 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 6.
  • FIG. 47 is a schematic diagram of a partial circuit in some embodiments of the electronic device 100 provided by the embodiment of the present application.
  • the card socket assembly 10 of the electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 6, and the signal arrangement of the card interface 62 of the second NM card 6 is shown in FIG. 45 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the first elastic piece to the eighth elastic piece of the card connector of the card socket assembly 10 .
  • the first memory card controller 2021 includes four data interfaces, a clock interface, and a command and response multiplexing interface.
  • the four data interfaces are used to transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the clock interface is used to transmit clock signals (CLK)
  • the command and response multiplexing interface is used to transmit command and response signals (CMD).
  • the multiple interfaces of the first memory card controller 2021 are identified by the signals they transmit. Wherein, when the power interface and the ground interface are separated, they may also be integrated in the first memory card controller 2021 .
  • the interface controller 201 is used to connect the SIM card controller 203 with the card connector, or connect the first memory card controller 2021 with the card connector, or connect the second memory card controller 2022 with the card device.
  • Interface controller 201 may include a number of switches and wires.
  • the interface controller 201 includes a first switch 2011 , a second switch 2012 , a third switch 2013 , a fourth switch 2014 , a fifth switch 2015 and a sixth switch 2016 .
  • the first switch 2011 is connected to a data interface (such as RX-) of the second memory card controller 2022, a data interface (such as DATA1) of the first memory card controller 2021 and a data interface (DATA) of the SIM card controller 203,
  • the first switch 2011 is also connected to the first elastic piece of the card connector.
  • the first switch 2011 is used to connect the first elastic piece to the data interface (such as RX-) of the second memory card controller 2022, or to connect the first elastic piece to the second memory card controller 2022.
  • a data interface (for example, DATA1 ) of the memory card controller 2021 or connect the first shrapnel with the data interface (DATA) of the SIM card controller 203 .
  • the second switch 2012 is connected to the reference clock interface (RCLK) of the second memory card controller 2022, the clock interface (CLK) of the first memory card controller 2021 and the clock interface (CLK) of the SIM card controller 203, the second switch 2012
  • the second elastic piece of the card connector is also connected, and the second switch 2012 is used to connect the second elastic piece to the reference clock interface (RCLK) of the second memory card controller 2022, or to connect the second elastic piece to the first memory card controller
  • the clock interface (CLK) of 2021, or the clock interface (CLK) of the second shrapnel and the SIM card controller 203 is turned on.
  • the third switch 2013 is connected to the second power interface (VCCQ) of the second memory card controller 2022, the command and response multiplex interface (CMD) of the first memory card controller 2021 and the programming voltage/input interface of the SIM card controller 203 (VPP), the third switch 2013 is also connected to the third elastic piece of the card connector, and the third switch 2013 is used to conduct the third elastic piece and the second power interface (VCCQ) of the second memory card controller 2022, or conduct the first
  • the command and response multiplexing interface (CMD) of the first memory card controller 2021 is connected between the three shrapnels, or the programming voltage/input interface (VPP) of the SIM card controller 203 is connected with the third shrapnel.
  • the fourth switch 2014 is connected to another data interface (such as RX+) of the second memory card controller 2022, another data interface (such as DATA0) of the first memory card controller 2021 and the reset interface (RST) of the SIM card controller 203 , the fourth switch 2014 is also connected to the fourth elastic piece of the card connector, and the fourth switch 2014 is used to connect the fourth elastic piece to the data interface (such as RX+) of the second memory card controller 2022, or to connect the fourth elastic piece to the second memory card controller 2022.
  • the fifth switch 2015 is connected to another data interface (such as TX+) of the second memory card controller 2022 and another data interface (such as DATA3) of the first memory card controller 2021, and the fifth switch 2015 is also connected to the second interface of the card connector. Seven shrapnel, the fifth switch 2015 is used to connect the seventh shrapnel to the data interface (such as TX+) of the second memory card controller 2022, or to connect the seventh shrapnel to the data interface of the first memory card controller 2021 (such as DATA3 ).
  • the sixth switch 2016 is connected to another data interface (such as TX-) of the second memory card controller 2022 and another data interface (such as DATA2) of the first memory card controller 2021, and the sixth switch 2016 is also connected to the The eighth shrapnel, the sixth switch 2016 is used to connect the eighth shrapnel to the data interface (such as TX-) of the second memory card controller 2022, or to connect the eighth shrapnel to the data interface of the first memory card controller 2021 (e.g. DATA2).
  • TX- data interface
  • DATA2 data interface
  • the power interface of the processor 20 is electrically connected to the sixth elastic piece of the card connector through the interface controller 201 .
  • the ground interface of the processor 20 is electrically connected to the fifth elastic piece of the card connector through the interface controller 201 .
  • the interface controller 201 can be connected by setting wires to maintain a conduction state, and the interface controller 201 can also be connected with a switch in series. Switching between the on state and the off state is realized by a switch, which is not strictly limited in this embodiment of the present application.
  • the interface controller 201 conducts the SIM card controller 203 and the card connector, and the SIM card
  • the controller 203 performs data signal (DATA), clock signal (CLK), transmission programming voltage/input signal (VPP) and reset signal (RST) with the Nano SIM card 3 via the first shrapnel to the fourth shrapnel of the card connector.
  • DATA data signal
  • CLK clock signal
  • VPP transmission programming voltage/input signal
  • RST reset signal
  • the processor 20 of the electronic device 100 transmits the power signal (VCC) and the ground signal (GND) with the Nano SIM card 3 through the sixth shrapnel and the fifth shrapnel of the card connector, and the Nano SIM card 3 Realize communication with the electronic device 100 .
  • the interface controller 201 When the first NM card 4 is inserted into the card socket assembly 10 of the electronic device 100, and the first NM card 4 is electrically connected to the card connector, the interface controller 201 conducts the first memory card controller 2021 and the card connector, and the first memory card The controller 2021 performs data signals (DATA0, DATA1, DATA2, DATA3) and clock signals (CLK) with the first NM card 4 via the first to fourth elastic pieces, seventh elastic pieces, and eighth elastic pieces of the card connector. And the transmission of command and response signal (CMD), the processor 20 of electronic equipment 100 carries out power signal (VCC) and ground signal (GND) with the first NM card 4 through the 6th shrapnel and the 5th shrapnel of card connector. ), the first NM card 4 communicates with the electronic device 100.
  • VCC power signal
  • GND ground signal
  • the interface controller 201 conducts the second memory card controller 2022 and the card connector, and the second memory card
  • the controller 2022 performs data signals (RX+, RX-, TX+, TX-) and reference clock signals with the second NM card 6 via the first to fourth elastic pieces, seventh elastic pieces, and eighth elastic pieces of the card connector. (RCLK) and the transmission of the second power signal (VCCQ), the processor 20 of the electronic device 100 performs the first power signal (VCC) with the second NM card 6 through the sixth elastic piece and the fifth elastic piece of the card connector. and ground signal (VSS), the second NM card 6 communicates with the electronic device 100 . Therefore, the electronic device 100 is compatible with the Nano SIM card 3 and the second NM card 6.
  • the It can be electrically connected to a high-voltage resistant circuit or a protection switch, which is used to avoid outputting a high-voltage data signal of the SIM card controller 203 at the first shrapnel of the card connector, a second shrapnel outputting a high-voltage clock signal of the SIM card controller 203, and a sixth shrapnel.
  • the shrapnel When the shrapnel outputs a high-voltage power signal, the shrapnel short-circuits and burns out the circuit, so as to improve the reliability of the second NM card.
  • the high-voltage-resistant circuit or the protection switch are located in the package of the second NM card.
  • FIG. 48 is a schematic diagram of the connection structure between the second NM card 6 shown in FIG. 45 and the card connector 11 shown in FIG. 5 .
  • the second NM card 6 can also be plugged into the electronic device 100 having the card connector 11 shown in FIG. 5 .
  • the first gold fingers 621 to the eighth gold fingers 628 of the second NM card 6 are pressed against one by one to electrically connect the second NM card 6 .
  • the first elastic piece 11a of the card connector 11 can be opposed to the third elastic piece 11c and electrically connected to the first gold finger 621 of the second NM card, and the second elastic piece 11b can be opposed to the fourth elastic piece 11d and electrically connected to the second NM card 6; or, the first row of spring pieces (11a, 11b) abuts against the card body 51 of the second NM card 6.
  • Table 9 is a table of correspondence between multiple gold fingers of the card connector 11 shown in FIG. two.
  • the third elastic piece 11c to the tenth elastic piece 11j of the card connector 11 resist and electrically connect the first gold finger 621 to the eighth golden finger 621 of the second NM card 6 in one-to-one correspondence.
  • the gold finger 628, the first gold finger 621 to the sixth gold finger 626 of the second NM card 6 correspond to the positions of the first gold finger 321 to the sixth gold finger 326 of the Nano SIM card 3 in one-to-one correspondence.
  • the positions of the first gold finger 621 to the eighth gold finger 628 of the second NM card 6 are in one-to-one correspondence with the positions of the first gold finger 421 to the eighth gold finger 428 of the first NM card 4 .
  • FIG. 49 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the electronic device 100 shown is compatible with the Nano SIM card 3 and the second NM card 6, and the signal arrangement of the card interface 62 of the second NM card 6 is shown in FIG. 45 .
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203 and a second memory card controller 2022, the SIM card controller 203 and the second memory card controller 2022 are electrically connected to the interface controller 201, and the interface controller 201 is electrically connected to the third elastic piece 11c to the tenth elastic piece 11j of the card connector 11 of the card socket assembly 10 .
  • This embodiment may include most of the technical features of the embodiment shown in FIG. 46 .
  • the main difference between the two lies in the connection relationship between the interface controller 201 and the elastic piece of the card connector 11 .
  • the first switch 2011 to the fourth switch 2014 are respectively electrically connected to the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11, and the power interface is electrically connected to the second elastic piece 11f of the card connector 11 through the interface controller 201.
  • the ground interface is electrically connected to the seventh elastic piece 11g of the card connector 11 through the interface controller 201, and the two data interfaces (such as RX+, RX-) of the second memory card controller 2022 are electrically connected through the interface controller 201 respectively
  • the ninth elastic piece 11i and the tenth elastic piece 11j are electrically connected to the interface controller 201 respectively.
  • the SIM card controller 203, the second memory card controller 2022, the power interface, the ground interface, and other solutions of the interface controller 201 can refer to the relevant description of the corresponding embodiment in FIG. .
  • FIG. 50 is a schematic diagram of some circuits of the electronic device 100 shown in FIG. 1 in other embodiments.
  • the card socket assembly 10 of the shown electronic device 100 is compatible with the Nano SIM card 3, the first NM card 4 and the second NM card 6, and the signal arrangement of the card interface 62 of the second NM card 6 is shown in Figure 45 Show.
  • the processor 20 of the electronic device 100 includes an interface controller 201, a SIM card controller 203, a first memory card controller 2021, and a second memory card controller 2022, and the SIM card controller 203, the first memory card controller 2021, and a second memory card controller 2022
  • the second memory card controller 2022 is electrically connected to the interface controller 201
  • the interface controller 201 is electrically connected to the third elastic piece 11c to the tenth elastic piece 11j of the card connector 11 of the card holder assembly 10 .
  • This embodiment may include most of the technical features of the embodiment shown in FIG. 47 .
  • the main difference between the two lies in the connection relationship between the interface controller 201 and the elastic piece of the card connector 11 .
  • the first switch 2011 to the fourth switch 2014 are respectively electrically connected to the third elastic piece 11c to the sixth elastic piece 11f of the card connector 11, and the power interface is electrically connected to the second elastic piece 11f of the card connector 11 through the interface controller 201.
  • Eight elastic pieces 11h, the ground interface are electrically connected to the seventh elastic piece 11g of the card connector 11 through the interface controller 201, and the fifth switch 2015 and the sixth switch 2016 are electrically connected to the ninth elastic piece 11i and the tenth elastic piece 11j respectively.
  • the SIM card controller 203 the second memory card controller 2022, the power interface, the ground interface, and other solutions of the interface controller 201 can refer to the relevant description of the corresponding embodiment in FIG. 47 , which will not be repeated here. .
  • the above-mentioned electronic device can identify the type of the information card inserted into the electronic device through the information card identification method.
  • the information card identification method can identify whether the information card is a Nano SIM card or a second NM card, and the information card identification method can be applied to an electronic device that is compatible with a Nano SIM card and a second NM card.
  • Information card identification methods include:
  • Step 001 Execute the first initialization process
  • Step 002 If the first reply instruction is received, it is judged that the inserted information card is the first card; if the first reply instruction is not received, it is judged that the inserted information card is not the first card, and the second initialization process is executed;
  • Step 003 If the second reply instruction is received, determine that the inserted information card is the second card; if the second reply instruction is not received, determine that the inserted information card is not the second card.
  • the electronic device by executing the initialization process of the information card, if the electronic device receives a specific reply signal, it can judge that the information card is an information card corresponding to the initialization process; if it does not receive a specific reply signal, it can judge that the information card The card is not an information card corresponding to the initialization process, and the next initialization process is executed to determine whether the information card is an information card corresponding to the next initialization process.
  • the first initialization process can be a SIM card initialization process, and the first card is a Nano SIM card; the second initialization process can be a second NM card initialization process, and the second card is a second NM card.
  • the first initialization process can be a second NM card initialization process, and the first card is a second NM card; the second initialization process can be a SIM card initialization process, and the second card is a Nano SIM card.
  • the SIM card initialization process may include: controlling the interface controller to connect the SIM card controller and the card connector.
  • the third shrapnel of the card connector transmits the data signal (DATA)
  • the fourth shrapnel transmits the clock signal (CLK)
  • the fifth shrapnel transmits the programming voltage/input signal (VPP)
  • the sixth shrapnel transmits the reset signal (RST)
  • the sixth shrapnel transmits the reset signal (RST).
  • the seventh shrapnel transmits the ground signal (GND)
  • the eighth shrapnel transmits the power signal (VCC).
  • the initialization process of the second NM card may include: controlling the interface controller to connect the second NM card controller and the card connector.
  • the first, third, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-), the second shrapnel transmits the second power signal (VCCQ), the fourth shrapnel transmits the reference clock signal (RCLK), the fifth shrapnel transmits the detection signal (C/D), and the seventh shrapnel transmits the ground signal (VSS), the eighth shrapnel transmits the first power signal (VCC).
  • the second NM card controller can send a detection signal (C/D) to the information card through the fifth shrapnel of the card connector, and if it receives the response signal returned by the correct information card, it can identify the information card as the second NM card. Card.
  • C/D detection signal
  • the first, fifth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-), the second shrapnel transmits the second power signal (VCCQ), the fourth shrapnel transmits the reference clock signal (RCLK), the seventh shrapnel transmits the ground signal (VSS), and the eighth shrapnel transmits the first power signal (VCC).
  • the third gold finger or the sixth gold finger of the second NM card is used to transmit the detection signal (C/D)
  • the corresponding third or sixth elastic piece of the card connector is used to transmit the detection signal (C/D). D).
  • the first, fifth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-)
  • the second shrapnel transmits the second power signal (VCCQ)
  • the sixth shrapnel transmits the reference clock signal (RCLK)
  • the seventh shrapnel transmits the ground signal (VSS)
  • the eighth shrapnel transmits the first power signal (VCC).
  • the third, sixth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-), the first shrapnel transmits the second power signal (VDD2), the second shrapnel and the fifth shrapnel transmit the clock signal (CLK+, CLK-), the seventh shrapnel transmits the ground signal (VSS), the eighth The shrapnel transmits the first power signal (VDD1).
  • the third, sixth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-), the first shrapnel and the fifth shrapnel transmit the clock signal (CLK+, CLK-), the second shrapnel transmits the second power signal (VDD2), the seventh shrapnel transmits the ground signal (VSS), the eighth The shrapnel transmits the first power signal (VDD1).
  • the second, sixth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-), the first shrapnel transmits the second power signal (VDD2), the fourth shrapnel and the fifth shrapnel transmit the clock signal (CLK+, CLK-), the seventh shrapnel transmits the ground signal (VSS), the eighth The shrapnel transmits the first power signal (VDD1).
  • the first, sixth, ninth and tenth elastic pieces of the card connector transmit data signals (RX+, RX-, TX+, TX-)
  • the second shrapnel transmits the second power signal (VDD2)
  • the fourth shrapnel and the fifth shrapnel transmit the clock signal (CLK+, CLK-)
  • the seventh shrapnel transmits the ground signal (VSS)
  • the eighth The shrapnel transmits the first power signal (VDD1).
  • the shrapnel and the tenth shrapnel transmit data signals (RX+, RX-, TX+, TX-), the fifth shrapnel transmits the second power signal (VCCQ), the fourth shrapnel transmits the reference clock signal (RCLK), and the seventh shrapnel transmits the ground signal ( VSS), the eighth shrapnel transmits the first power signal (VCC);
  • the card connector The first shrapnel, the fourth shrapnel, the seventh shrapnel and the eighth shrapnel transmit data signals (RX+, RX-, TX+, TX-), the third shrapnel transmits the second power signal (VCCQ), and the second shrapnel transmits the reference clock signal (
  • the third shrapnel of the control card connector does not transmit the second power signal (VCCQ).
  • the third elastic piece of the control card connector may not transmit a signal; or, the third elastic piece of the control card connector transmits an identification signal, and the identification signal is used to identify or assist in identifying whether the information card is the second NM card.
  • the third shrapnel of the control card connector transmits the second power signal (VCCQ).
  • the first initialization process can be a SIM card initialization process, and the first card is a Nano SIM card; the second The second initialization process may be a second NM card initialization process, and the second card is the second NM card.
  • the information card identification method responds to the electronic device being turned on or the electronic device being restarted.
  • the first initialization process may be a SIM card initialization process.
  • the information card identification method when the electronic device is turned on or the electronic device is restarted, the information card identification method first performs the SIM card initialization process to determine whether the information card is a Nano SIM card, so as to first enter the networking state.
  • the information card identification method when the information card identification method responds to the electronic device being turned on or the electronic device is restarted, the information card identification method may also first execute the non-Nano SIM card initialization process, which is not strictly limited in this embodiment of the present application.
  • the information card identification method responds to detecting that the state of the card tray is switched from the disengaged state to the inserted state, that is, when it is detected that the state of the card tray is switched from the disengaged state to the inserted state, the first initialization process is executed .
  • the electronic device can detect whether the state of the card holder is in the disengaged state or the inserted state through the insertion detection shrapnel in the card holder assembly.
  • the information card identification method can identify whether the information card is a Nano SIM card, the first NM card or the second NM card, and the information card identification method can be applied to compatible Nano SIM cards, the first NM card and the second NM card. Electronic equipment for NM cards.
  • Information card identification methods include:
  • Step 001 Execute the first initialization process
  • Step 002 If the first reply instruction is received, it is judged that the inserted information card is the first card; if the first reply instruction is not received, it is judged that the inserted information card is not the first card, and the second initialization process is executed;
  • Step 003 If the second reply instruction is received, it is judged that the inserted information card is the second card; if the second reply instruction is not received, it is judged that the inserted information card is not the second card, and the third initialization process is executed;
  • Step 004 If the third reply instruction is received, determine that the inserted information card is the third card; if the third reply instruction is not received, determine that the inserted information card is not the third card.
  • step 003 when it is judged that the inserted information card is not the second card, the information card identification method then executes the third initialization process to It is judged whether the information card is the third card.
  • one is the SIM card initialization process
  • the other is the first NM card initialization process
  • the other is the second NM card initialization process process
  • one is a Nano SIM card
  • the other is a first NM card
  • the other is a second NM card.
  • the initialization process of the first NM card may include: controlling the interface controller to connect the first NM card controller and the card connector.
  • the third shrapnel, the sixth shrapnel, the ninth shrapnel and the tenth shrapnel of the card connector transmit data signals (DATA0, DATA1, DATA2, DATA3)
  • the fourth shrapnel transmits a clock signal (CLK)
  • the fifth shrapnel transmits commands and
  • the seventh shrapnel transmits the ground signal (GND)
  • the eighth shrapnel transmits the first power signal (VCC).
  • the third initialization process can be the second NM card initialization process, and the third The card is the second NM card.
  • the first initialization process may be a SIM card initialization process or a first NM card initialization process.

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Abstract

本申请公开了一种存储卡。存储卡包括卡体和卡接口，卡接口固定于卡体且露出于卡体的一侧，卡体的尺寸与Nano SIM卡的卡体的尺寸相同；卡接口包括呈阵列排布的十个金手指，十个金手指排布成两列五排。上述存储卡能够安装于兼容Nano SIM卡的卡座组件中，使得电子设备无需额外设置单独适配存储卡的卡座组件，有利于电子设备的轻薄化。

Description

存储卡
本申请要求于2021年12月15日提交中国专利局、申请号为202111538645.7、申请名称为“终端、卡连接器、卡座、卡座组件以及存储卡”的中国专利申请的优先权，其全部内容通过引用结合在本申请中；本申请还要求于2022年03月31日提交中国专利局、申请号为202210334207.7、申请名称为“存储卡”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及通信技术领域，尤其涉及一种存储卡。
背景技术
随着电子设备产品的发展，电子设备内需要设置多张信息卡，以满足其功能性的需求。以手机为例，通常手机内需要设置客户识别模块(Subscriber Identification Module，SIM)卡及存储卡等。各类信息卡均需要对应的卡座组件与之相匹配，因此，电子设备内通常需要设置多个卡座组件，导致卡座组件的占板面积需求在变大，占用了电子设备内部的空间，严重制约了电子设备轻薄化的发展。
发明内容
本申请提供了一种存储卡，存储卡能够安装于兼容Nano SIM卡的卡座组件中，使得电子设备无需额外设置单独适配存储卡的卡座组件，有利于电子设备的轻薄化。
第一方面，本申请提供一种存储卡，包括卡体和卡接口，卡接口固定于卡体且露出于卡体的一侧，存储卡的卡体的尺寸与Nano SIM卡的卡体的尺寸相同。存储卡的卡体包括第一边、第二边、第三边和第四边，第一边和第三边相对设置并沿存储卡的长度方向延伸，第二边和第四边相对设置并沿存储卡的宽度方向延伸，第二边与第四边的间距大于第一边与第三边的间距，存储卡的卡体的一个角为切角，切角设置于第一边与第二边之间。其中，第一边和第三边可以平行或近似平行设置，第二边和第四边可以平行或近似平行设置。
卡接口包括呈阵列排布的十个金手指，十个金手指沿存储卡的长度方向排布成第一列金手指和第二列金手指，第一列金手指位于第二边与第二列金手指之间，第一列金手指包括沿存储卡的宽度方向依次排布的第一金手指、第三金手指、第五金手指、第七金手指及第九金手指，第二列金手指包括沿存储卡的宽度方向依次排布的第二金手指、第四金手指、第六金手指、第八金手指及第十金手指；第一金手指位于第一边与第三金手指之间，第二金手指位于第一边与第四金手指之间。
在本申请中，存储卡通过将卡接口的所有金手指设置于卡体的一侧表面，且存储卡的卡体的尺寸与Nano SIM卡的卡体的尺寸相同，存储卡的金手指的排布与Nano SIM卡的排布方式部分相似，从而能够于Nano SIM卡兼容于同一个卡座组件，以减少电子设备的卡座组件数量，有利于电子设备的轻薄化。
一些可能的实现方式中，十个金手指沿存储卡的宽度方向排布成第一排金手指至第五排金手指。第二排金手指与第三排金手指的中心间距和第三排金手指与第四排金手指的中心间距，大于第一排金手指与第二排金手指的中心间距，且大于第四排金手指与第五排金手指的中心间距。第三排金手指与第四排金手指的中心间距，大于第一排金手指与第二排金手指的中心间距，且大于第四排金手指与第五排金手指的中心间距。
在本实现方式中，存储卡的十个金手指通过设置其排布方式和中心间距，从而插接兼容 Nano SIM卡的卡座组件，以减少电子设备的卡座组件数量，有利于电子设备的轻薄化。
一些可能的实现方式中，第二排金手指与第三排金手指的中心间距在1.5mm至2.8mm的范围内，第三排金手指与第四排金手指的中心间距在1.5mm至2.8mm的范围内，第一排金手指与第二排金手指的中心间距在1.0mm至1.7mm的范围内，第四排金手指与第五排金手指的中心间距在1.0mm至1.7mm的范围内。
在本实现方式中，存储卡在插接兼容Nano SIM卡的卡座组件时，存储卡的十个金手指间发生短路的风险较低，存储卡与卡座组件的电连接关系可靠。
一些可能的实现方式中，第三金手指与Nano SIM卡的第一金手指位置对应；第四金手指与Nano SIM卡的第二金手指位置对应；第五金手指与Nano SIM卡的第三金手指位置对应；第六金手指与Nano SIM卡的第四金手指位置对应；第七金手指与Nano SIM卡的第五金手指位置对应；第八金手指与Nano SIM卡的第六金手指位置对应。
在本实现方式中，存储卡的第三金手指至第八金手指一一对应地与Nano SIM卡的第一金手指至第六金手指位置对应，使得存储卡能够很好地插接于兼容Nano SIM卡的卡座组件。
一些可能的实现方式中，存储卡和Nano SIM卡能够安装于同一个卡座组件，卡座组件的卡连接器包括呈阵列排布的第一弹片至第十弹片。
当存储卡安装于卡座组件时，第三金手指电连接卡连接器的第三弹片，第四金手指电连接卡连接器的第四弹片，第五金手指电连接卡连接器的第五弹片，第六金手指电连接卡连接器的第六弹片，第七金手指电连接卡连接器的第七弹片，第八金手指电连接卡连接器的第八弹片；
当Nano SIM卡安装于卡座组件时，Nano SIM卡的第一金手指电连接卡连接器的第三弹片，Nano SIM卡的第二金手指电连接卡连接器的第四弹片，Nano SIM卡的第三金手指电连接卡连接器的第五弹片，Nano SIM卡的第四金手指电连接卡连接器的第六弹片，Nano SIM卡的第五金手指电连接卡连接器的第七弹片，Nano SIM卡的第六金手指电连接卡连接器的第八弹片。
一些可能的实现方式中，存储卡支持UFS接口协议；存储卡的十个金手指中的四个金手指用于传输数据信号，一个金手指用于传输参考时钟信号，一个金手指用于传输第一电源信号、一个金手指用于传输地信号、一个金手指用于传输第二电源信号。此时，存储卡能够支撑UFS协议，实现高速卡的基本性能。
其中，在第一金手指至第十金手指中，剩余的两个金手指可以均悬空设置；或者，剩余的两个金手指中的其中一个金手指悬空设置，另一个金手指用于传输检测信号；或者，剩余两个金手指中的其中一个金手指用于传输检测信号，另一个金手指用于传输其他信号；或者，剩余的两个金手指均用于传输检测信号。其中，检测信号可以为特殊的数据信号，当信息卡与卡连接器电连接，与电子设备通信时，电子设备可以通过检测信号识别插入的信息卡是否为存储卡；在一些实施例中，电子设备还可以通过检测信号识别插入的存储卡的版本，或者识别插入的存储卡的接口协议。存储卡通过其中至少一个金手指传输检测信号，能够降低电子设备识别存储卡的难度。在其他一些实施例中，在第一金手指至第十金手指中，剩余的两个金手指中的一个或两个金手指也可以用于传输其他信号。
一些可能的实现方式中，存储卡支持UFS接口协议；第一金手指、第三金手指、第九金手指以及第十金手指用于传输数据信号，第二金手指用于传输第二电源信号，第四金手指用于传输参考时钟信号，第七金手指用于传输地信号，第八金手指用于传输第一电源信号。
一些可能的实现方式中，第五金手指和第六金手指悬空设置。或者，第五金手指或第六 金手指中的至少一个金手指用于传输检测信号。
一些可能的实现方式中，存储卡支持UFS接口协议；第一金手指、第五金手指、第九金手指以及第十金手指用于传输数据信号，第二金手指用于传输第二电源信号，第四金手指用于传输参考时钟信号，第七金手指用于传输地信号，第八金手指用于传输第一电源信号。
一些可能的实现方式中，第三金手指和第六金手指悬空设置；或者，第三金手指或第六金手指中的至少一个金手指用于传输检测信号。
一些可能的实现方式中，存储卡支持UFS接口协议；第一金手指、第五金手指、第九金手指以及第十金手指用于传输数据信号，第二金手指用于传输第二电源信号，第六金手指用于传输参考时钟信号，第七金手指用于传输地信号，第八金手指用于传输第一电源信号。
一些可能的实现方式中，第三金手指和第四金手指悬空设置；或者，第三金手指或第四金手指中的至少一个金手指用于传输检测信号。
一些可能的实现方式中，存储卡还设置有耐高压电路或保护开关，耐高压电路或保护开关与第四金手指和第十金手指电连接。耐高压电路或保护开关与用于避免存储卡的卡接口短路时烧坏电路。
一些可能的实现方式中，存储卡支持PCIe接口协议或SD接口协议。存储卡的十个金手指中，四个金手指用于传输数据信号，两个金手指用于传输时钟信号，一个金手指用于传输第一电源信号、一个金手指用于传输地信号、一个金手指用于传输第二电源信号。此时，存储卡能够支撑PCIe接口协议或SD接口协议，实现高速卡的基本性能。
其中，十个金手指中的其中一个金手指可以悬空设置。在其他一些实施例中，在第一金手指至第十金手指中，其中一个金手指不悬空设置，用于传输检测信号。其中，检测信号可以为特殊的数据信号，当信息卡与卡连接器电连接，与电子设备通信时，电子设备可以通过检测信号识别插入的信息卡是否为存储卡；在一些实施例中，电子设备还可以通过检测信号识别插入的存储卡的版本，或者识别插入的存储卡的接口协议。存储卡通过其中一个金手指传输检测信号，能够降低电子设备识别存储卡的难度。
一些可能的实现方式中，存储卡支持PCIe接口协议或SD接口协议；第三金手指、第六金手指、第九金手指及第十金手指用于传输数据信号，第一金手指用于传输第二电源信号，第七金手指用于传输地信号，第八金手指用于传输第一电源信号；第五金手指用于传输时钟信号，第二金手指和第四金手指中的一者用于传输时钟信号。
一些可能的实现方式中，第二金手指和第四金手指中的另一者悬空设置或者用于传输检测信号。
一些可能的实现方式中，存储卡还设置有耐高压电路或保护开关，耐高压电路或保护开关与第三金手指和第十金手指电连接。耐高压电路或保护开关与用于避免存储卡的卡接口短路时烧坏电路。
一些可能的实现方式中，存储卡支持PCIe接口协议或SD接口协议；第三金手指、第六金手指、第九金手指及第十金手指用于传输数据信号，第二金手指用于传输第二电源信号，第七金手指用于传输地信号，第八金手指用于传输第一电源信号；第五金手指用于传输时钟信号，第一金手指和第四金手指中的一者用于传输时钟信号。
一些可能的实现方式中，第一金手指和第四金手指中的另一者悬空设置或者用于传输检测信号。
一些可能的实现方式中，存储卡支持PCIe接口协议或SD接口协议；第六金手指、第九金手指及第十金手指用于传输数据信号，第一金手指和第二金手指中的一者用于传输第二电 源信号，另一者用于传输数据信号；第七金手指用于传输地信号，第八金手指用于传输第一电源信号；第五金手指用于传输时钟信号，第三金手指和第四金手指中的一者用于传输时钟信号。
一些可能的实现方式中，第三金手指和第四金手指中的另一者悬空设置或者用于传输检测信号。
一些可能的实现方式中，第一边与第三边的间距为8.8毫米，第二边与第四边的间距为12.3毫米。
第二方面，本申请还提供另一种存储卡，包括卡体和卡接口，卡接口固定于卡体且露出于卡体的一侧，卡体的尺寸与Nano SIM卡的卡体的尺寸相同；存储卡的卡体包括第一边、第二边、第三边和第四边，第一边和第三边相对设置并沿存储卡的长度方向延伸，第二边和第四边相对设置并沿存储卡的宽度方向延伸，第二边与第四边的间距大于第一边与第三边的间距；存储卡的卡体的一个角为切角，切角设置于第一边和第二边之间。
卡接口包括呈阵列排布的八个金手指，八个金手指沿存储卡的长度方向排布成第一列金手指和第二列金手指，第一列金手指位于第二边与第二列金手指之间，第一列金手指包括沿存储卡的宽度方向排布的第一金手指、第三金手指、第五金手指及第七金手指，第二列金手指包括沿存储卡的宽度方向排布的第二金手指、第四金手指、第六金手指及第八金手指,第一金手指位于第一边与第三金手指之间，第二金手指位于第一边与第四金手指之间。
第一金手指至第六金手指一一对应地与Nano SIM卡的六个金手指位置对应。也即，第一金手指与Nano SIM卡的第一金手指位置对应；第二金手指与Nano SIM卡的第二金手指位置对应；第三金手指与Nano SIM卡的第三金手指位置对应；第四金手指与Nano SIM卡的第四金手指位置对应；第五金手指与Nano SIM卡的第五金手指位置对应；第六金手指与Nano SIM卡的第六金手指位置对应。
存储卡支持UFS接口协议；第一金手指、第四金手指、第七金手指及第八金手指用于传输数据信号，第二金手指用于传输参考时钟信号，第三金手指用于传输第二电源信号，第五金手指用于传输地信号，第六金手指用于传输第一电源信号。
在本申请中，存储卡通过将卡接口的所有金手指设置于卡体的一侧表面，且存储卡的卡体的尺寸与Nano SIM卡的卡体的尺寸相同，存储卡的金手指的排布与Nano SIM卡的排布方式部分相似，从而能够于Nano SIM卡兼容于同一个卡座组件，以减少电子设备的卡座组件数量，有利于电子设备的轻薄化。此外，存储卡能够支持UFS接口协议，以实现高速传输。
一些可能的实现方式中，第一边与第三边的间距为8.8毫米，第二边与第四边的间距为12.3毫米。
附图说明
图1是本申请实施例提供的一种电子设备的结构示意图；
图2是图1所示卡座组件在一些使用状态中的结构示意图；
图3是图2所示卡座的分解结构示意图；
图4是图2所示卡托在另一角度的结构示意图；
图5是本申请实施例提供的一种卡连接器的结构示意图；
图6是图5所示卡连接器在另一个角度的结构示意图一；
图7是图6所示卡连接器的导电体的结构示意图；
图8是图6所示卡连接器的A处结构的内部结构示意图；
图9是图5所示卡连接器在另一角度的结构示意图二；
图10是本申请实施例提供的一种Nano SIM卡的示意框图；
图11是图10所示Nano SIM卡在一些实施例中的结构示意图；
图12是图11所示Nano SIM卡与图5所示卡连接器连接时的结构示意图；
图13是本申请实施例提供的一种第一NM卡的示意框图；
图14是图13所示第一NM卡在一些实施例中的结构示意图；
图15是图14所示第一NM卡与图5所示卡连接器连接时的结构示意图；
图16是本申请实施例提供的一种第二NM卡的示意框图；
图17是图16所示第二NM卡在一些实施例中的结构示意图；
图18是图17所示第二NM卡与图5所示卡连接器连接时的结构示意图；
图19是图1所示电子设备的部分电路在一些实施例中的示意框图；
图20是图17所示第二NM卡在一些实施例中的尺寸图；
图21A是图16所示第二NM卡在另一些实施例中的尺寸图；
图21B是图21A所示第二NM卡的另一尺寸图；
图22是图16所示第二NM卡在另一些实施例中的尺寸图；
图23是图16所示第二NM卡在另一些实施例中的尺寸图；
图24是图17所示第二NM卡在一些实施例中的示意图；
图25是图1所示电子设备在一些实施例中的部分电路的示意图；
图26是图1所示电子设备在另一些实施例中的部分电路的示意图；
图27是图17所示第二NM卡在另一些实施例中的示意图；
图28是图1所示电子设备在另一些实施例中的部分电路的示意图；
图29是图1所示电子设备在另一些实施例中的部分电路的示意图；
图30是图17所示第二NM卡在另一些实施例中的示意图；
图31是图1所示电子设备在另一些实施例中的部分电路的示意图；
图32是图1所示电子设备在另一些实施例中的部分电路的示意图；
图33是图17所示第二NM卡在另一些实施例中的示意图；
图34是图1所示电子设备在另一些实施例中的部分电路的示意图；
图35是图1所示电子设备在另一些实施例中的部分电路的示意图；
图36是图17所示第二NM卡在另一些实施例中的示意图；
图37是图1所示电子设备在另一些实施例中的部分电路的示意图；
图38是图1所示电子设备在另一些实施例中的部分电路的示意图；
图39是图17所示第二NM卡在另一些实施例中的示意图；
图40是图1所示电子设备在另一些实施例中的部分电路的示意图；
图41是图1所示电子设备在另一些实施例中的部分电路的示意图；
图42是图17所示第二NM卡在另一些实施例中的示意图；
图43是图1所示电子设备在另一些实施例中的部分电路的示意图；
图44是图1所示电子设备在另一些实施例中的部分电路的示意图；
图45是本申请实施例提供的第二NM卡在另一实施例中的结构示意图；
图46是本申请实施例提供的电子设备在一些实施例中的部分电路的示意图；
图47是本申请实施例提供的电子设备在一些实施例中的部分电路的示意图；
图48是图45所示第二NM卡与图5所示卡连接器的连接结构示意图；
图49是图1所示电子设备在另一些实施例中的部分电路的示意图；
图50是图1所示电子设备在另一些实施例中的部分电路的示意图。
具体实施方式
下面将结合附图对本申请实施例中的技术方案进行描述。其中，在本申请实施例的描述中，除非另有说明，“/”表示或的意思，例如，A/B可以表示A或B；文本中的“和/或”仅仅是一种描述关联对象的关联关系，表示可以存在三种关系，例如，A和/或B，可以表示：单独存在A，同时存在A和B，单独存在B这三种情况；文本中的“至少部分”包括“部分”和“全部”两种情况；文本中的“多个”是指两个或多于两个，“多张”是指两张或多于两张。
以下，术语“第一”、“第二”等用词仅用于描述目的，而不能理解为暗示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。
本申请实施例中所提到的方位用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”、“顶”、“底”等，仅是参考附图的方向，因此，使用的方位用语是为了更好、更清楚地说明及理解本申请实施例，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请实施例的限制。
在本申请实施例的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”、“设置在……上”应做广义理解，例如，“连接”可以是可拆卸地连接，也可以是不可拆卸地连接；可以是直接连接，也可以通过中间媒介间接连接。
请参阅图1，图1是本申请实施例提供的一种电子设备100的结构示意图。其中，电子设备100可以是手机、平板、智能穿戴设备等电子产品，本申请实施例以电子设备100是手机为例进行示意。
一些实施例中，电子设备100可以包括卡座组件10、处理器20、壳体30、显示屏40及电路板50。其中，显示屏40可以安装于壳体30，显示屏40用于显示图像、视频等。电路板50安装于壳体30的内侧，处理器20可以固定于电路板50且电连接电路板50。卡座组件10包括卡座1和卡托2。卡座1可以安装于壳体30的内侧，卡座1还可以固定连接电路板50，且与电路板50电连接。处理器20可以通过电路板50电连接卡座1。卡托2可拆卸地插接卡座1。卡托2用于安装一张或多张信息卡，卡托2可以携带信息卡插入卡座1，以使信息卡插接卡座组件10，信息卡与电子设备100实现通信。
示例性的，信息卡可以为Nano SIM(subscriber identification module，用户标识模块)卡、Nano存储卡或Nano二合一卡。Nano SIM卡也称为4FF卡，如ETSI TS 102 221 V11.0.0规范的、卡体的尺寸为长度12.30mm、宽度8.80mm、厚度0.67mm的SIM卡。用户可以在卡座组件10中插入Nano SIM卡，Nano SIM卡与处理器20通信，电子设备100通过Nano SIM卡和网络交互，实现通话以及数据通信等功能。Nano存储卡也可以简称为NM(nano memory，nano存储)卡。用户也可以在卡座组件10中插入NM卡，NM卡与处理器20通信，实现数据存储功能。例如可以将音乐、视频等文件保存在NM卡中。Nano二合一卡可以包括SIM卡电路和存储卡电路，SIM卡电路用于支持通话以及数据通信等功能，存储卡电路用于支持数据存储功能。用户也可以在卡座组件10中插入Nano二合一卡，Nano二合一卡与处理器20通信，实现通话、数据通信及数据存储等功能。
一些实施例中，电子设备100还可以包括内部存储器、通用串行总线(universal serial bus，USB)接口、充电管理模块、电源管理模块、电池、天线、移动通信模块、无线通信模块、音频模块、扬声器、受话器、麦克风、耳机接口、传感器模块、按键、马达、指示器以及摄像头等中的一者或多者。在其他一些实施例中，电子设备100可以具有比上述方案更多的或 者更少的部件，可以组合两个或多个的部件，或者可以具有不同的部件配置。上述各种部件可以在包括一个或多个信号处理和/或专用集成电路在内的硬件、软件、或硬件和软件的组合中实现。
在一些实施例中，处理器20可以包括一个或多个处理单元，例如：处理器20可以包括应用处理器(application processor，AP)、调制解调处理器、图形处理器(graphics processing unit，GPU)、图像信号处理器(image signal processor，ISP)、控制器、存储器、视频编解码器、数字信号处理器(digital signal processor，DSP)、基带处理器、神经网络处理器(neural-network processing unit，NPU)等中的一者或多者，本申请实施例对此不作严格限定。其中，不同的处理单元可以是独立的器件，也可以集成在一个或多个处理器20中。其中，处理器20还可以包括一个或多个接口，处理器20可以通过一个或多个接口与电子设备100的其他部件通信。
请结合参阅图2至图4，图2是图1所示卡座组件10在一些使用状态中的结构示意图，图3是图2所示卡座1的分解结构示意图，图4是图2所示卡托2在另一角度的结构示意图。
一些实施例中，卡座1可以包括座体12、第一卡连接器13、第二卡连接器14、顶出组件15及插入检测弹片16。其中，座体12大体呈罩体形状，座体12包括顶板121及连接顶板121的多个侧板122，顶板121及多个侧板122共同围设出座体12的内侧空间123。第一卡连接器13位于座体12的内侧空间123且固定连接座体12，第一卡连接器13与顶板121相对设置。第二卡连接器14的结构与第一卡连接器13的结构可以相同或不同。第二卡连接器14位于座体12的内侧空间123，第二卡连接器14位于第一卡连接器13背向顶板121的一侧，第二卡连接器14与第一卡连接器13相对设置，第二卡连接器14与第一卡连接器13之间形成间隙。第一卡连接器13、第二卡连接器14及座体12的侧板122共同围设出卡座1的卡槽17。其中，卡槽17的一端敞开、形成开口，卡槽17的另一端形成卡槽17的底部。
其中，卡座1安装于电子设备100中时，多个侧板122的远离顶板121的端部固定至电子设备100的电路板50。第一卡连接器13的多个焊脚固定连接且电连接电路板50，使得第一卡连接器13能够电连接至电子设备100的处理器20。第二卡连接器14可以固定连接电路板50，以通过电路板50固定连接座体12。或者，第二卡连接器14也可以直接固定连接座体12。第二卡连接器14的多个焊脚固定连接且电连接电路板50，使得第二卡连接器14能够电连接至电子设备100的处理器20。
其中，卡托2可以具有相背设置的第一安装槽21和第二安装槽22，第一安装槽21的开口和第二安装槽22的开口分别位于卡托2的两侧表面。第一安装槽21和第二安装槽22均用于安装信息卡。例如图2和图4中，两张信息卡可以分别安装于第一安装槽21和第二安装槽22。其中，第一安装槽21和第二安装槽22的开槽尺寸可以相同或相近，安装于第一安装槽21和第二安装槽22的两张信息卡的卡体的尺寸相同。在其他一些实施例中，第一安装槽21和第二安装槽22的开槽尺寸也可以不同，安装于第一安装槽21和第二安装槽22的两张信息卡的卡体的尺寸不同。
第一安装槽21和第二安装槽22的开槽尺寸与对应的信息卡的卡体的尺寸相适配，例如，第一安装槽21和第二安装槽22的开槽尺寸可以略大于对应的信息卡的卡体的尺寸，但尺寸相差不大，使得信息卡可以顺利装入第一安装槽21和第二安装槽22中，且安装位置较为稳定。
其中，卡托2可以单独、或者携带信息卡，经卡槽17的开口插入卡槽17中。卡托2和/或信息卡插入卡槽17的方向(也即插卡方向)为卡槽17的开口向卡槽17的底部的方向。卡 槽17的尺寸与卡托2的尺寸相适配，例如，卡槽17的尺寸可以略大于卡托2的尺寸但两者相差不大，卡托2与卡槽17的槽壁之间具有一定的配合间隙，使得卡托2可以顺利插入卡槽17，且能够稳定安装于卡槽17中。卡托2携带信息卡插入卡槽17时，安装于卡托2的信息卡电连接第一卡连接器13或第二卡连接器14，以电连接电子设备100。
其中，顶出组件15可以安装于座体12和/或第一卡连接器13。卡托2插入卡槽17时，用户可以通过控制顶出组件15，使得顶出组件15将卡托2部分顶出卡槽17，以便于用户取下卡托2。示例性的，插入检测弹片16可以安装于第一卡连接器13，且电连接电路板50。插入检测弹片16可以至少部分位于卡槽17的底部。插入检测弹片16可以用于检测卡托2是否插入卡槽17。
在其他一些实施例中，卡座1也可以设置一个卡连接器，卡座组件10用于安装一张信息卡，卡托2的结构做适应性调整。在其他一些实施例中，卡座1也可以设有三个或更多个的卡连接器，使得卡座组件10能够用于安装三张以上的信息卡，卡托2的结构做适应性调整。本申请实施例对卡座1的卡连接器的数量、位置、卡托2的具体结构等不作严格限定。
在其他一些实施例中，卡座1也可以设置有不同于图示结构的顶出组件15和/或插入检测弹片16。在其他一些实施例中，卡座组件10可以包括比上述实施例更多的或更少的部件，本申请实施例对此不作严格限定。
请结合参阅图5和图6，图5是本申请实施例提供的一种卡连接器11的结构示意图，图6是图5所示卡连接器11在另一个角度的结构示意图一。示例性的，图5所示卡连接器11可以应用于图3所示卡座1中，作为第一卡连接器13和/或第二卡连接器14使用。
本申请实施例提供一种卡连接器11，卡连接器11可以应用于电子设备100的卡座1，卡连接器11用于连接信息卡。其中，卡连接器11包括多个弹片，卡连接器11连接信息卡时，弹片抵持信息卡。
一些实施例中，卡连接器11包括阵列排布的十个弹片，十个弹片彼此间隔。十个弹片可以大致排布成2×5的阵列结构。例如，十个弹片沿第一方向排布成第一排弹片至第五排弹片，沿第二方向排布成第一列弹片和第二列弹片。第一列弹片包括沿第一方向排布的第一弹片11a、第三弹片11c、第五弹片11e、第七弹片11g及第九弹片11i，第二列弹片包括沿第一方向排布的第二弹片11b、第四弹片11d、第六弹片11f、第八弹片11h及第十弹片11j。第一弹片11a和第二弹片11b位于第一排弹片，第三弹片11c和第四弹片11d位于第二排弹片，第五弹片11e和第六弹片11f位于第三排弹片，第七弹片11g和第八弹片11h位于第四排弹片，第九弹片11i和第十弹片11j位于第五排弹片。
其中，多个弹片沿第一方向成列排布时，位于同一列的多个弹片的中心点(也即弹片的用于抵持信息卡的部分的中心点)可以在第一方向上对齐，也可以不对齐、而稍微错开排布，本申请实施例对此不作严格限定。其中，多个弹片沿第二方向成排排布时，位于同一排的两个弹片的中心点(也即弹片的用于抵持信息卡的部分的中心点)可以在第二方向上对齐，也可以不对齐、而稍微错开排布，本申请实施例对此不作严格限定。
其中，结合参阅图2、图3、图5以及图6，卡连接器11应用于卡座组件10时，信息卡插入卡座组件10卡槽17的插卡方向平行于第二方向，也即信息卡连接卡连接器11时的插入方向平行于第二方向。信息卡的插入过程中，信息卡先接触卡连接器11的排布于前侧的结构，后接触卡连接器11的排布于后侧的结构。卡连接器11安装于卡座1时，卡连接器11的排布于前侧的结构靠近卡槽17的开口，卡连接器11的排布于后侧的结构远离卡槽17的开口。例如，卡连接器11的第二列弹片可以位于第一列弹片的后侧，第二列弹片相对第一列弹片远离 卡座组件10的卡槽17的开口。在其他一些实施例中，卡连接器11的第二列弹片也可以相对第一列弹片靠近卡座组件10的卡槽17的开口，本申请实施例对此方案不再进行赘述。
请结合参阅图6和图7，图7是图6所示卡连接器11的导电体113的结构示意图。
一些实施例中，卡连接器11包括绝缘本体112和导电体113。其中，绝缘本体112可以大致呈板状，绝缘本体112还设有多个彼此间隔设置的镂空区。例如，绝缘本体112可以包括六个第一镂空区1121、多个第二镂空区1122和多个第三镂空区1123。其中，六个第一镂空区1121可以排布成两列三排，包括第一列第一镂空区1121和位于第一列第一镂空区1121后侧的第二列第一镂空区1121。第二镂空区1122可以排布成两列，且两列第二镂空区1122分别位于两列第一镂空区1121的后侧。第三镂空区1123可以排布成一排，且位于第二列第一镂空区1121的后侧。
示例性的，导电体113嵌设于绝缘本体112。其中，导电体113可以由一体的金属板件冲压形成。导电体113包括十个弹片和十个固定件1131，十个弹片可以包括上述第一弹片11a至第十弹片11j,十个固定件1131一一对应地连接十个弹片，其中固定件1131和弹片都是导电材质。导电体113包括十个导电块，对应的一个固定件1131和一个弹片位于同一个导电块，十个导电块彼此间隔设置。其中，十个固定件1131嵌设于绝缘本体112中，以固定连接绝缘本体112，十个弹片分别通过十个固定件1131固定连接绝缘本体112。
示例性的，每个弹片(附图为了简洁，对其中一个弹片(例如11j)进行标示)均包括固定端111a、抵接端111b及活动端111c，固定端111a、抵接端111b及活动端111c沿弹片的延伸方向依次排布，弹片的延伸方向垂直于第一方向，也即平行于第二方向。固定端111a连接固定件1131，固定端111a通过固定件1131固定于绝缘本体112。抵接端111b相对绝缘本体112的一侧表面突出，以在卡连接器11连接信息卡时，弹性抵持信息卡。活动端111c活动安装于绝缘本体112，活动端111c能够相对绝缘本体112在第二方向上移动。
在本实施例中，卡连接器11与信息卡连接时，抵接端111b抵持信息卡，抵接端111b向靠近绝缘本体112的方向移动，活动端111c相对绝缘本体112发生位移，弹片顺利发生形变，弹片抵持信息卡的弹性力适中，使得信息卡能够顺利连接卡连接器11，并且能够降低由于弹片弹性力过大而损坏信息卡的风险，提高可靠性。
其中，弹片还包括第一连接段111d和第二连接段111e，第一连接段111d连接固定端111a与抵接端111b，第二连接段111e连接抵接端111b与活动端111c，抵接端111b相对第一连接段111d和第二连接段111e凸起。也即，在卡连接器11的厚度方向(垂直于第一方向和第二方向)上，抵接端111b处于最高处，第一连接段111d和第二连接段111e次之，固定端111a和活动端111c位于最低处。弹片与信息卡连接时，弹片由抵接端111b抵持并电连接信息卡，第一连接段111d、固定端111a、第二连接段111e及活动端111c均不接触信息卡、并与信息卡形成间隙。
其中，抵接端111b可以包括凸起设置的抵接触点111f，抵接触点111f具有一定的接触面积。卡连接器11与信息卡连接时，抵接触点111f抵持信息卡的金手指，以使卡连接器11电连接信息卡。
示例性的，第三弹片11c至第八弹片11h可以分别位于六个第一镂空区1121中，第一弹片11a可以与第三弹片11c位于同一个第一镂空区1121中，第二弹片11b可以与第四弹片11d位于同一个第一镂空区1121中，第七弹片11g可以与第九弹片11i位于同一个第一镂空区1121中，第八弹片11h可以与第十弹片11j位于同一个第一镂空区1121中。
各固定件1131包围或半包围对应的弹片。其中，单独位于一个第一镂空区1121的弹片， 其对应的固定件1131全包围该弹片。例如，第五弹片11e单独位于其中一个第一镂空区1121中，连接第五弹片11e的固定件1131全包围第五弹片11e。第六弹片11f单独位于其中一个第一镂空区1121中，连接第六弹片11f的固定件1131全包围第六弹片11f。
其中，共用同一个第一镂空区1121的两个弹片，其对应的两个固定件1131呈合围趋势，共同包括这两个弹片，且分别半包围对应的弹片。例如，第一弹片11a和第三弹片11c位于同一个第一镂空区1121中，连接第一弹片11a的固定件1131和连接第三弹片11c的固定件1131，共同环绕第一弹片11a和第三弹片11c，连接第一弹片11a的固定件1131半包围第一弹片11a，连接第三弹片11c的固定件1131半包围第三弹片11c。第七弹片11g和第九弹片11i位于同一个第一镂空区1121中，连接第七弹片11g的固定件1131和连接第九弹片11i的固定件1131，共同环绕第七弹片11g和第九弹片11i，连接第七弹片11g的固定件1131半包围第七弹片11g，连接第九弹片11i的固定件1131半包围第九弹片11i。第二弹片11b和第四弹片11d与其对应的固定件1131的关系，第八弹片11h和第十弹片11j与其对应的固定件1131的关系参考上述描述，此处不再赘述。
请结合参阅图6和图8，图8是图6所示卡连接器11的A处结构的内部结构示意图。图8中示意出弹片的活动端111c与绝缘本体112的连接结构。图6中以第十弹片11j为例进行标号。一些实施例中，绝缘本体112还包括连通孔1124，连通孔1124连通相邻的第一镂空区1121和第二镂空区1122。弹片的活动端111c插接于连通孔1124，活动端111c的末端包括止位块1111，止位块1111与绝缘本体112配合形成防脱结构。在本实施例中，通过防脱结构能够有效防止弹片的活动端111c脱离绝缘本体112，提高了弹片与绝缘本体112的连接可靠性，使得卡连接器11的可靠性高。
示例性的，弹片的固定端111a和抵接端111b位于第一镂空区1121，弹片的活动端111c插接连通孔1124、经连通孔1124延伸至第二镂空区1122，止位块1111至少部分位于第二镂空区1122。其中，连通孔1124在卡位方向上的宽度小于止位块1111在卡位方向上的宽度，卡位方向可以为任意一个方向，连通孔1124在某一个方向上的尺寸小于止位块1111在同一个方向上的尺寸，即可以使得止位块1111与绝缘本体112配合形成防脱结构，以防止止位块1111穿过连通孔1124、而导致弹片的活动端111c脱离绝缘本体112。例如，在弹片的延伸方向的垂直方向上，也即在第一方向上，止位块1111的宽度大于连通孔1124的宽度。可以理解的是，本申请实施例对连通孔1124的形状和尺寸、止位块1111的形状和尺寸不作严格限定。
请再次参阅图6和图7，一些实施例中，导电体113的各导电块均还包括焊脚1132(附图为了简洁，对部分焊脚1132进行标示)，焊脚1132固定连接固定件1131，焊脚1132用于焊接至电路板50(可参阅图1)，以使卡连接器11固定连接电路板50，弹片电连接电路板50。其中，每个导电块中的焊脚1132数量为至少一个。
示例性的，各导电块均的至少一个焊脚1132包括第一焊脚1133，第一焊脚1133靠近弹片的固定端111a设置。也即，第一焊脚1133连接于固定件1131的靠近弹片的固定端111a的端部。在信息卡的插卡过程中，信息卡与弹片的抵接端111b之间产生摩擦力，该摩擦力使得弹片具有沿插卡方向(也即第二方向)活动的趋势，弹片的固定端111a受到拉力。导电块通过设置靠近弹片的固定端111a的第一焊脚1133，第一焊脚1133焊接电路板50，使得弹片上的受力由第一焊脚1133传递至电路板50，导电块的固定件1131不易发生变形，固定件1131与绝缘本体112的连接关系稳定，有利于提高卡连接器11和卡座组件10的可靠性。可以理解的是，在信息卡的拔卡过程中，第一焊脚1133同样能够传递应力。
其中，部分导电块的至少一个焊脚1132还可以包括第二焊脚1134，第二焊脚1134靠近弹片的活动端111c设置。也即，第二焊脚1134连接于固定件1131的靠近弹片的活动端111c的端部。在信息卡的拔卡过程中，信息卡与弹片的抵接端111b之间产生摩擦力，该摩擦力使得弹片具有沿拔卡方向(也即第二方向的反方向)活动的趋势，弹片的活动端111c经防脱结构对绝缘本体112产生拉力，导电块通过设置靠近弹片的活动端111c的第二焊脚1134，第二焊脚1134焊接电路板50，使得绝缘本体112上的受力由第二焊脚1134传递至电路板50，导电块的固定件1131不易发生变形，固定件1131与绝缘本体112的连接关系稳定，有利于提高卡连接器11和卡座组件10的可靠性。可以理解的是，在信息卡的拔卡过程中，第一焊脚1133同样能够传递应力。在信息卡的插卡过程中，第一焊脚1133和第二焊脚1134均能够传递应力。
在其他一些实施例中，导电块上的焊脚1132也可以连接于固定件1131的其他位置，例如连接固定件1131的中部，本申请实施例对此不作严格限定。
示例性的，导电体113的多个焊脚1132中的部分焊脚1132可以位于第一镂空区1121中，部分焊脚1132可以位于第三镂空区1123中，排布位置可以参阅图6。在其他一些实施例中，导电体113的多个焊脚1132也可以有其他排布方式，例如，导电体113的多个焊脚1132均位于第一镂空区1121，则绝缘本体112也可以不设置第三镂空区1123，本申请实施例对此不作严格限定。
请参阅图9，图9是图5所示卡连接器11在另一角度的结构示意图二。
一些实施例中，第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距S2，大于第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距S1，且大于第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距S4。第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距S3，大于第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距S1，且大于第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距S4。
也即，第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距S2、第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距S3较大，第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距S1、第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距S4较小。
其中，当同一排的两个弹片对齐时，两排弹片的中心间距即为位于同一列的两个弹片的中心间距；两个弹片的中心间距是指，两个弹片的用于抵持信息卡的部分(例如抵接触点111f)的中心点在第一方向上的间距。当同一排的两个弹片在第二方向上有少许错位时，则两排弹片的中心间距为第一列弹片的两个弹片的中心间距和第二列弹片的两个弹片的中心间距的平均值。
如图9所示，第三弹片11c与第五弹片11e的中心间距大于第一弹片11a与第三弹片11c的中心间距及第七弹片11g与第九弹片11i的中心间距；第五弹片11e与第七弹片11g的中心间距大于第一弹片11a与第三弹片11c的中心间距及第七弹片11g与第九弹片11i的中心间距；第四弹片11d与第六弹片11f的中心间距大于第二弹片11b与第四弹片11d的中心间距及第八弹片11h与第十弹片11j的中心间距；第六弹片11f与第八弹片11h的中心间距大于第二弹片11b与第四弹片11d的中心间距及第八弹片11h与第十弹片11j的中心间距。
示例性的，第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距S2可以在1.0mm至3.0mm的范围内，例如可以在1.5mm至2.8mm的范围内，例如可以为2.48mm、2.54mm、2.59mm、2.63mm等；和/或，第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间 距S3可以在1.0mm至3.0mm的范围内，例如可以在1.5mm至2.8mm的范围内，例如可以为2.48mm、2.54mm、2.59mm、2.63mm等；和/或，第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距S1可以在1.0mm至1.7mm的范围内，例如可以为1.03mm、1.07mm、1.12mm等；和/或，第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距S4可以在1.0mm至1.7mm的范围内，例如可以为1.32mm、1.37mm、1.41mm等。
其中，第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距S2和第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距S3可以相等，也可以不相等，本申请实施例对此不作严格限定。相邻两排弹片中对应的两组弹片的中心间距可以相等，也可以不相等，本申请实施例对此不作严格限定。例如，第一排弹片(11a、11b)和第二排弹片(11c、11d)中，第一弹片11a与第三弹片11c的中心间距，和第二弹片11b与第四弹片11d的中心间距，可以相等，也可以不相等。
在本申请实施例中，通过设置多个弹片的排布方式和中心间距，使得多个弹片能够形成多种组合，多种组合中的弹片数量及位置能够与多种类型的信息卡的金手指数量及位置相适配，使得卡连接器11能够与不同类型的信息卡实现通信，实现多卡兼容，可拓展性较好。因此，当卡连接器11应用于电子设备100的卡座组件10时，电子设备100能够通过同一个卡座组件10适配多种类型的信息卡，从而减少了卡座组件10的数量，降低了对电子设备100内部空间的占用，有利于电子设备100的轻薄化。
在一些实施例中，卡连接器11可以与具有六个金手指(也可以称为端子、端口、金属触点等)的Nano SIM卡通信，也可以与具有十个金手指或八个金手指或其他数量金手指的第二NM卡通信，以兼容Nano SIM卡和第二NM卡。其中，第二NM卡的卡体的尺寸与Nano SIM卡的卡体的尺寸相同。在本申请中，两张信息卡的卡体的尺寸相同，可以是指两张信息卡的卡体的尺寸一致，也可以是两张信息卡的卡体的尺寸很相近、均能够稳定地放置于卡座组件10的卡托2的同一个安装槽中。
在另一些实施例中，卡连接器11可以与具有六个金手指的Nano SIM卡通信，也可以与具有十个金手指或八个金手指或其他数量金手指的第二NM卡通信，还可以与具有八个金手指的第一NM卡通信，以兼容Nano SIM卡、第二NM卡以及第一NM卡。其中，第一NM卡为第一代NM卡，第二NM卡为第二代NM卡，第二NM卡的传输速率大于第一NM卡的传输速率。第一NM卡的卡体的尺寸可以与Nano SIM卡的卡体的尺寸相同。
在另一些实施例中，卡连接器11可以与具有六个金手指的Nano SIM卡通信，也可以与具有至少十个金手指的二合一卡通信，以兼容Nano SIM卡和二合一卡。其中，二合一卡的卡体的尺寸与Nano SIM卡的卡体的尺寸相同。
在另一些实施例中，卡连接器11也可以在兼容Nano SIM卡和二合一卡时，还兼容第一NM卡和/或第二NM卡，本申请实施例对此不作严格限定。
本申请提供一种Nano SIM卡，该Nano SIM卡能够适配上述卡连接器11，以下对Nano SIM卡的结构、Nano SIM卡与卡连接器11的连接结构进行举例说明。
请结合参阅图10至图12，图10是本申请实施例提供的一种Nano SIM卡3的示意框图，图11是图10所示Nano SIM卡3在一些实施例中的结构示意图，图12是图11所示Nano SIM卡3与图5所示卡连接器11连接时的结构示意图。
一些实施例中，如图10和图11所示，Nano SIM卡3可以包括卡体31和卡接口32。卡体31包括封装件311和设置于封装件311内的控制电路312和SIM电路313。卡接口32固定于卡体31，且相对卡体31露出，卡接口32电连接控制电路312。封装件311用于封装控 制电路312、SIM电路313以及控制电路312与SIM电路313及卡接口32之间的电连接线路，以进行保护。封装件311采用介电材料，介电材料包括但不限于乙烯醋酸乙烯酯(ethylene-vinyl acetate，EVA)、聚乙烯醇缩丁醛(polyvinyl butyral，PVB)、离聚物、聚烯烃(polyolefins，PO)、硅、热塑性聚氨酯等材料。
其中，Nano SIM卡3具有两两垂直的长度方向、宽度方向及厚度方向，Nano SIM卡3的卡体31在长度方向上的最大尺寸为其长度，在宽度方向上的最大尺寸为其宽度，在厚度方向上的最大尺寸为其厚度。Nano SIM卡3的卡体31的尺寸可以为长度12.30mm、宽度8.80mm、厚度0.67mm。在本申请实施例中，信息卡的卡体的尺寸即为卡体的封装件的外轮廓的尺寸。
其中，图11中的Nano SIM卡3的卡接口32朝上设置；图12中的Nano SIM卡3所处视角相对图11中的Nano SIM卡3所处视角进行上下翻转，图12中的Nano SIM卡3的卡接口32朝下设置，卡连接器11位于Nano SIM卡3下方。
一些实施例中，Nano SIM卡3的卡体31包括第一边3111、第二边3112、第三边3113以及第四边3114，第一边3111和第三边3113相对设置并沿Nano SIM卡3的长度方向延伸，第二边3112和第四边3114相对设置并沿Nano SIM卡3的宽度方向延伸。其中，第二边3112与第四边3114的间距大于第一边3111与第三边3113的间距。换言之，第一边3111和第三边3113为长边，第二边3112和第四边3114为短边。其中，第一边3111和第三边3113可以平行或近似平行设置，第二边3112和第四边3114可以平行或近似平行设置。
其中，Nano SIM卡3的卡体31的一个角为切角，切角设置于第一边3111与第二边3112之间。该切角形成切边3115，切边3115与第一边3111之间形成钝角，且与第二边3112之间形成钝角。其中，Nano SIM卡3的卡体31的相邻边(包括第一边3111、第二边3112、第三边3113、第四边3114以及切边3115)之间可以设置圆弧过渡结构或倒角过渡结构。在其他一些实施例中，Nano SIM卡3的卡体31也可以不设置上述切角，本申请对此不作严格限定。
示例性的，Nano SIM卡3的卡接口32包括至少六个金手指，例如包括阵列排布的第一金手指321、第二金手指322、第三金手指323、第四金手指324、第五金手指325以及第六金手指326。第一金手指321相较于其他金手指更靠近Nano SIM卡3的卡体31的切边3115。
当卡托2安装有Nano SIM卡3，Nano SIM卡3插入卡座组件10，Nano SIM卡3连接卡连接器11时，卡连接器11的十个弹片均抵持Nano SIM卡3，其中，卡连接器11的第三弹片11c至第八弹片11h(也即第二排弹片至第四排弹片)一一对应地抵持且电连接Nano SIM卡3的第一金手指321至第六金手指326，以电连接Nano SIM卡3。在本申请实施例中，卡连接器11的弹片与信息卡的金手指抵持时，两者能够实现电连接。
在本实施例中，卡连接器11将第三弹片11c至第八弹片11h排布成两列三排，第三弹片11c至第八弹片11h能够一一对应地抵持Nano SIM卡3的第一金手指321至第六金手指326，卡连接器11能够与Nano SIM卡3电连接以实现通信。
其中，结合参阅图9和图12，第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距及第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距设置在1.5mm至2.8mm的范围内，使得电子设备100能够通过第三弹片11c至第八弹片11h与Nano SIM卡3的第一金手指321至第六金手指326通信，且能够有效降低Nano SIM卡3的金手指间发生短路的风险，使得卡连接器11与Nano SIM卡3的电连接关系可靠。
可以理解的是，各国/不同运营商的Nano SIM卡3的金手指形状及尺寸可以不同，形成不同的金手指排布方式。例如，图11中所示Nano SIM卡3是为符合规范定义的其中一种金 手指排布方式。本申请实施例中卡连接器11和卡座组件10能够兼容各国/不同运营商的Nano SIM卡3。
其中，当Nano SIM卡3连接卡连接器11时，卡连接器11的第一排弹片(11a、11b)和第五排弹片(11i、11j)抵持Nano SIM卡3。一些实施例中，如图11和图12所示，当Nano SIM卡3连接卡连接器11时，第一弹片11a和第三弹片11c可以抵持且电连接Nano SIM卡3的第一金手指321，第二弹片11b和第四弹片11d可以抵持且电连接Nano SIM卡3的第二金手指322，第七弹片11g和第九弹片11i可以抵持且电连接Nano SIM卡3的第五金手指325，第八弹片11h和第十弹片11j可以抵持且电连接Nano SIM卡3的第六金手指326。其中，抵持同一个金手指的两个弹片可以通过金手指导通。
在其他一些实施例中，Nano SIM卡3的卡接口32的多个金手指也可以有不同于图11的排布结构，当Nano SIM卡3连接卡连接器11时，卡连接器11的第一排弹片(11a、11b)和第五排弹片(11i、11j)抵持Nano SIM卡3的卡体31；或者，卡连接器11的第一弹片11a和第三弹片11c可以抵持且电连接Nano SIM卡3的第一金手指321，第二弹片11b和第四弹片11d可以抵持且电连接Nano SIM卡3的第二金手指322，卡连接器11的第五排弹片(11i、11j)抵持Nano SIM卡3的卡体31；或者，第七弹片11g和第九弹片11i可以抵持且电连接Nano SIM卡3的第五金手指325，第八弹片11h和第十弹片11j可以抵持且电连接Nano SIM卡3的第六金手指326，卡连接器11的第一排弹片(11a、11b)抵持Nano SIM卡3的卡体31。其中，当卡连接器11的第一排弹片(11a、11b)和/或第五排弹片(11i、11j)抵持Nano SIM卡3的卡体31时，第一排弹片(11a、11b)和/或第五排弹片(11i、11j)与Nano SIM卡3的金手指不接触，相互之间无电连接关系。本申请实施例对卡连接器11的第一排弹片(11a、11b)和第五排弹片(11i、11j)与Nano SIM卡3的具体连接结构不作严格限定。
示例性的，Nano SIM卡3的六个金手指可以分别用于传输数据信号(DATA)、时钟信号(clock，CLK)、编程电压/输入信号(programming voltage/input signal，VPP)、复位信号(reset signal，RST)、地信号(GND)以及电源信号(VCC)。其中，数据信号(DATA)，也称为I/O信号，用于实现数据传输通讯；编程电压/输入信号(programming voltage/input signal，VPP)用于给Nano SIM卡3编程，也可以用在支持近场通信(near field communication，NFC)的卡上进行通讯。
如下表1所示，表1为卡连接器11的多个弹片与Nano SIM卡3的多个金手指及其传输信号的对应关系表。示例性的，卡连接器11的第三弹片11c电连接Nano SIM卡3的第一金手指321，第一金手指321用于传输数据信号(DATA)；第四弹片11d电连接Nano SIM卡3的第二金手指322，第二金手指322用于传输时钟信号(CLK)；第五弹片11e电连接Nano SIM卡3的第三金手指323，第三金手指323用于编程电压/输入信号(VPP)；第六弹片11f电连接Nano SIM卡3的第四金手指324，第四金手指324用于传输复位信号(RST)；第七弹片11g电连接Nano SIM卡3的第五金手指325，第五金手指325用于传输地信号(GND)；第八弹片11h电连接Nano SIM卡3的第六金手指326，第六金手指326用于传输电源信号(VCC)。
表1
Figure PCTCN2022137987-appb-000001
Figure PCTCN2022137987-appb-000002
在其他一些实施例中，Nano SIM卡3的六个金手指与上述六路信号也可以有其他对应关系，Nano SIM卡3的六个金手指也可以用于传输其他组合的信号，例如Nano SIM卡3也可以不传输编程电压/输入信号(VPP)，第三金手指323悬空设置，相应的，第三金手指323对应的第五弹片11e也可以不提供编程电压/输入信号(VPP)。本申请实施例对此不作严格限定。在本申请实施例中，金手指悬空设置也即该金手指不用于传输信号，不用于为信息卡提供信号端口。
本申请提供一种第一NM卡，该第一NM卡能够适配上述卡连接器11，以下对第一NM卡的结构、第一NM卡与卡连接器11的连接结构进行举例说明。
请结合参阅图13、图14以及图15，图13是本申请实施例提供的一种第一NM卡4的示意框图，图14是图13所示第一NM卡4在一些实施例中的结构示意图，图15是图14所示第一NM卡4与图5所示卡连接器11连接时的结构示意图。
一些实施例中，如图13和图14所示，第一NM卡4包括卡体41和卡接口42。卡体41包括封装件411和设置于封装件411内的控制电路412和存储电路413。卡接口42固定于卡体41，且相对卡体41露出，卡接口42电连接控制电路412。封装件411用于封装控制电路412、存储电路413、以及控制电路412与存储电路413及卡接口42之间的电连接线路，以进行保护。封装件411采用介电材料，介电材料包括但不限于乙烯醋酸乙烯酯(ethylene-vinyl acetate，EVA)、聚乙烯醇缩丁醛(polyvinyl butyral，PVB)、离聚物、聚烯烃(polyolefins，PO)、硅、热塑性聚氨酯等材料。
其中，第一NM卡4的卡体41的尺寸可以与Nano SIM卡3的卡体31的尺寸相同。第一NM卡4具有两两垂直的长度方向、宽度方向及厚度方向，第一NM卡4的卡体41在长度方向上的最大尺寸为其长度，在宽度方向上的最大尺寸为其宽度，在厚度方向上的最大尺寸为其厚度。例如，第一NM卡4的卡体41的尺寸可以为长度12.30mm、宽度8.80mm、厚度0.67mm。
其中，图14中的第一NM卡4的卡接口42朝上设置；图15中的第一NM卡4所处视角相对图14中的第一NM卡4所处视角进行上下翻转，图15中的第一NM卡4的卡接口42朝下设置，卡连接器11位于第一NM卡4下方。
一些实施例中，第一NM卡4的卡体41包括第一边4111、第二边4112、第三边4113以及第四边4114，第一边4111和第三边4113相对设置并沿第一NM卡4的长度方向延伸，第二边4112和第四边4114相对设置并沿第一NM卡4的宽度方向延伸。其中，第二边4112与第四边4114的间距大于第一边4111与第三边4113的间距。换言之，第一边4111和第三边4113为长边，第二边4112和第四边4114为短边。其中，第一边4111和第三边4113可以平行或近似平行设置，第二边4112和第四边4114可以平行或近似平行设置。
其中，第一NM卡4的卡体41的一个角为切角，切角设置于第一边4111与第二边4112之间。该切角形成切边4115，切边4115与第一边4111之间形成钝角，且与第二边4112之间 形成钝角。其中，第一NM卡4的卡体41的相邻边(包括第一边4111、第二边4112、第三边4113、第四边4114以及切边4115)之间可以设置圆弧过渡结构或倒角过渡结构。在其他一些实施例中，第一NM卡4的卡体41也可以不设置上述切角，本申请对此不作严格限定。其中，第一NM卡4的卡体41的切角的尺寸可以与Nano SIM卡3的卡体31的切角的尺寸相同或不同，两者不同时，也认为第一NM卡4的卡体41的尺寸与Nano SIM卡3的卡体31的尺寸相同。
示例性的，第一NM卡4的卡接口42包括至少八个金手指，例如可以包括阵列排布的第一金手指421、第二金手指422、第三金手指423、第四金手指424、第五金手指425、第六金手指426、第七金手指427及第八金手指428，第一金手指421相较于其他金手指更靠近卡体41的切边4115。
当卡托2安装有第一NM卡4，第一NM卡4插入卡座组件10，第一NM卡4连接卡连接器11时，卡连接器11的十个弹片均抵持第一NM卡4，其中，卡连接器11的第三弹片11c至第十弹片11j(也即第二排弹片至第四排弹片)一一对应地抵持第一NM卡4的第一金手指421至第八金手指428，以电连接第一NM卡4。
在本实施例中，卡连接器11将第三弹片11c至第十弹片11j排布成四排两列，第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距、小于第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距及第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距，使得卡连接器11的第三弹片11c至第八弹片11h能够与Nano SIM卡3的六个金手指一一对应地电连接，且第三弹片11c至第十弹片11j还能够同时与第一NM卡4的八个金手指一一对应地电连接，因此卡连接器11能够兼容Nano SIM卡3和第一NM卡4。
其中，结合参阅图9、图12和图15，由于Nano SIM卡3和第一NM卡4的金手指数量不同，金手指的形状不同，金手指的尺寸不同，金手指排布位置以及金手指间隔距离也不同，通过将第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距、及第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距设置在1.5mm至2.8mm的范围内，第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距设置在1.0mm至1.7mm的范围内，使得第三弹片11c至第八弹片11h能够分别与Nano SIM卡3的六个金手指通信，且三弹片11c至第十弹片11j能够分别与第一NM卡4的八个金手指通信，卡连接器11能够在兼容Nano SIM卡3和第一NM卡4的基础上，有效降低当Nano SIM卡3设置于卡连接器11时，Nano SIM卡3的金手指与卡连接器11的弹片发生短路的风险，以及当第一NM卡4设置于卡连接器11时，第一NM卡4的金手指与卡连接器11的弹片发生短路的风险，使得卡连接器11与Nano SIM卡3和第一NM卡4的电连接关系可靠，实现Nano SIM卡3和第一NM卡4可以分时共用同一个卡连接器11。
其中，如图15所示，虽然第一NM卡4的第七金手指427和第八金手指428呈“L”型，但是由于卡连接器11的弹片是通过其抵接触点与信息卡的金手指抵接的，弹片的其余部分与金手指之间均形成间隙，因此第九弹片11i电连接第七金手指427，第七弹片11g与第七金手指427之间不接触、无电连接关系，第十弹片11j电连接第八金手指428，第八弹片11h与第八金手指428之间不接触、无电连接关系。
其中，当第一NM卡4连接卡连接器11时，卡连接器11的第一排弹片(11a、11b)抵持第一NM卡4。一些实施例中，第一弹片11a和第三弹片11c抵持且电连接第一NM卡4的第一金手指421，第二弹片11b和第四弹片11d抵持且电连接第一NM卡4的第二金手指422；在另一些实施例中，第一排弹片(11a、11b)抵接第一NM卡4的卡体41，此时，第 一排弹片(11a、11b)与第一NM卡4之间无电连接关系。本申请实施例对卡连接器11的第一排弹片(11a、11b)与第一NM卡4的具体连接结构不作严格限定。
示例性的，第一NM卡4可以采用嵌入式多媒体存储卡(embedded multi media card，EMMC)接口协议。第一NM卡4的八个金手指中可以有四个金手指用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，一个金手指用于传输时钟信号(CLK)，一个金手指用于传输命令和响应信号(CMD)，一个金手指用于传输地信号(GND)，一个金手指用于传输电源信号(VCC)。其中，数据信号(DATA0、DATA1、DATA2、DATA3)用于实现数据传输通讯。命令和响应信号(CMD)可以将命令由外部设备发给存储卡，或者是让存储卡对外部设备进行命令的应答响应。
如下表2所示，表2为卡连接器11的多个弹片与Nano SIM卡3和第一NM卡4的多个金手指及其传输信号的对应关系表。第一NM卡4与卡连接器11连接时，卡连接器11的第三弹片11c至第十弹片11j一一对应地抵持且电连接第一NM卡4的第一金手指421至第八金手指428。在本申请中，若两张信息卡上的两个金手指在与电子设备100的卡连接器11连接时，与同一个弹片抵持且电连接，则认为这两个金手指位置对应。例如，第一NM卡4的第一金手指421至第六金手指426一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。两张信息卡的两个金手指的位置对应时，两个金手指的形状、尺寸及在信息卡的卡体上具体位置，可以相同，也可以存在差异，本申请实施例对此不作严格限定。
示例性的，第一NM卡4的第一金手指421、第四金手指424、第七金手指427及第八金手指428可以用于传输数据信号；例如，第一金手指421用于传输数据信号(DATA1)、第四金手指424用于传输数据信号(DATA0)、第七金手指427用于传输数据信号(DATA3)、第八金手指428用于传输数据信号(DATA2)，第一金手指421、第四金手指424、第七金手指427及第八金手指428中传输的信号在其他一些实施例中可以互相调换，此处不再赘述。第一NM卡4的第二金手指422用于传输时钟信号(CLK)，第三金手指423用于传输命令和响应信号(CMD)，第五金手指425用于传输地信号(GND)，第六金手指426用于传输电源信号(VCC)。
表2
Figure PCTCN2022137987-appb-000003
在其他一些实施例中，第一NM卡4的八个金手指与上述八路信号也可以有其他对应关系，第一NM卡4的八个金手指也可以用于传输其他组合的信号，本申请实施例对此不作严格限定。
示例性的，第一NM卡4的第一金手指421、第四金手指424和第八金手指428均可以电连接耐高压电路或保护开关，用于避免第三弹片11c至第五弹片11e以及第八弹片11h提供高压时烧坏第一NM卡4的电路。其中，耐高压电路或保护开关均位于第一NM卡4的封装件411内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，例如在接口控制器内增加保护电路实现。
本申请还提供一种第二NM卡，第二NM卡为存储卡，通过对高速协议做适当裁剪适配，对卡接口的结构进行改动，使得高速协议可以适用于第二NM卡，以提高第二NM卡的传输速率，使得第二NM卡的传输速率大于第一NM卡的传输速率。通过提升第二NM卡的传输速率，使得插接第二NM卡的电子设备100能够更好地支撑5G、Wifi6、8K高清视频、游戏等使用场景和需求，以提高用户使用体验。
示例性的，第一NM卡的传输速率通常都低于100MB/s。例如，上述第一NM卡4可以采用EMMC接口协议，卡接口42具有八个金手指，第一NM卡4的传输速率可以达到90MB/s。第二NM卡可以通过采用不同的接口协议，卡接口具有十个或八个或其他数量的金手指，使得传输速率通常都高于100MB/s，甚至可以达到1GB/s。例如，第二NM卡可以采用通用闪存存储(Universal Flash Storage，UFS)接口协议、高速外设部件互连(peripheral component interconnect express，PCIe)接口协议、安全数据(Secure Digital，SD)接口协议，非易失性存储(Non-Volatile Memory Epress，NVMe)接口协议等接口协议，第二NM卡的传输速率一般在200MB/s至800MB/s范围内。在一些实施例中，第二NM卡也可以采用EMMC接口协议，通过变频手段提升传输速率。
请结合参阅图16、图17和图18，图16是本申请实施例提供的一种第二NM卡5的示意框图，图17是图16所示第二NM卡5在一些实施例中的结构示意图，图18是图17所示第二NM卡5与图5所示卡连接器11连接时的结构示意图。
一些实施例中，如图16和图17所示，第二NM卡5包括卡体51和卡接口52。卡体51包括封装件511和设置于封装件511内的控制电路512和存储电路513。卡接口52固定于卡体51，且相对露出于卡体51的一侧，卡接口52电连接控制电路512。封装件511用于封装控制电路512、存储电路513、以及控制电路512与存储电路513及卡接口52之间的电连接线路，以进行保护。封装件511采用介电材料，介电材料包括但不限于乙烯醋酸乙烯酯(ethylene-vinyl acetate，EVA)、聚乙烯醇缩丁醛(polyvinyl butyral，PVB)、离聚物、聚烯烃(polyolefins，PO)、硅、热塑性聚氨酯等材料。
其中，第二NM卡5的卡体51的尺寸可以与Nano SIM卡3的卡体31的尺寸相同。第二NM卡5具有两两垂直的长度方向、宽度方向及厚度方向，第二NM卡5的卡体51在长度方向上的最大尺寸为其长度，在宽度方向上的最大尺寸为其宽度，在厚度方向上的最大尺寸为其厚度。例如，第二NM卡5的卡体51的尺寸可以为长度12.30mm、宽度8.80mm、厚度0.67mm。
其中，图17中的第二NM卡5的卡接口52朝上设置；图18中的第二NM卡5所处视角相对图17中的第二NM卡5所处视角进行上下翻转，图18中的第二NM卡5的卡接口52朝下设置，卡连接器11位于第二NM卡5下方。
一些实施例中，第二NM卡5的卡体51包括第一边5111、第二边5112、第三边5113以及第四边5114，第一边5111和第三边5113相对设置并沿第二NM卡5的长度方向延伸，第二边5112和第四边5114相对设置并沿第二NM卡5的宽度方向延伸。其中，第二边5112与 第四边5114的间距大于第一边5111与第三边5113的间距。换言之，第一边5111和第三边5113为长边，第二边5112和第四边5114为短边。其中，第一边5111和第三边5113可以平行或近似平行设置，第二边5112和第四边5114可以平行或近似平行设置。
其中，第二NM卡5的卡体51的一个角为切角，切角设置于第一边5111与第二边5112之间。该切角形成切边5115，切边5115与第一边5111之间形成钝角，且与第二边5112之间形成钝角。其中，卡体51的相邻边(包括第一边5111、第二边5112、第三边5113、第四边5114以及切边5115)之间可以设置圆弧过渡结构或倒角过渡结构。在其他一些实施例中，第二NM卡5的卡体51也可以不设置上述切角，本申请对此不作严格限定。其中，第二NM卡5的卡体51的切角的尺寸可以与Nano SIM卡3的卡体31的切角的尺寸相同或不同，两者不同时，也认为第二NM卡5的卡体51的尺寸与Nano SIM卡3的卡体31的尺寸相同。
示例性的，第二NM卡5的卡接口52包括多个金手指，多个金手指露出于卡体51的同一侧。第二NM卡5的金手指的数量为至少十个，多个金手指例如可以包括第一金手指521、第二金手指522、第三金手指523、第四金手指524、第五金手指525、第六金手指526、第七金手指527、第八金手指528、第九金手指529及第十金手指5210。第二NM卡5的第一金手指521、第三金手指523、第五金手指525、第七金手指527及第九金手指529沿第二NM卡5的宽度方向排成第一列金手指，第二金手指522、第四金手指524、第六金手指526、第八金手指528及第十金手指5210沿第二NM卡5的宽度方向排成第二列金手指，第一列金手指和第二列金手指排布于第二NM卡5的长度方向，第一列金手指(521、523、525、527、529)的五个金手指与第二列金手指(522、524、526、528、5210)的五个金手指一一对应、两两成排设置，也即十个金手指沿第二NM卡5的宽度方向排布成第一排金手指(521、522)、第二排金手指(523、524)、第三排金手指(525、526)、第四排金手指(527、528)以及第五排金手指(529、5210)。此时，第一金手指321至第十金手指5210排布成两列五排。
其中，第一列金手指(521、523、525、527、529)位于第二边5112与第二列金手指(522、524、526、528、5210)之间，也即，第一列金手指(521、523、525、527、529)靠近第二边5112排布，第二列金手指(522、524、526、528、5210)靠近第四边5114排布。
其中，第一金手指521位于第一边5111与第三金手指523之间，第二金手指522位于第一边5111与第四金手指514之间。也即，第一排金手指(521、522)靠近第一边5111排布，第五排金手指(529、5210)靠近第三边5113排布。
其中，第一金手指521可以设有斜边，形成直角梯形，第一金手指521的斜边面向卡体51的切边5115设置，两者之间的间距大于或等于0.1mm，例如可以为0.2mm；第二金手指522至第十金手指5210可以为矩形。在其他一些实施例中，第一金手指521也可以为矩形。
其中，第二排金手指(523、524)与第三排金手指(525、526)的中心间距大于第一排金手指(521、522)与第二排金手指(523、524)的中心间距，且大于第四排金手指(527、528)与第五排金手指(529、5210)的中心间距。第三排金手指(525、526)与第四排金手指(527、528)的中心间距，大于第一排金手指(521、522)与第二排金手指(523、524)的中心间距，且大于第四排金手指(527、528)与第五排金手指(529、5210)的中心间距。
当第二NM卡5连接卡连接器11时，第二NM卡5的宽度方向平行于卡连接器11的第一方向，长度方向平行于卡连接器11的第二方向，卡连接器11的十个弹片均抵持第二NM卡5。其中，当卡托2安装有第二NM卡5，第二NM卡5插入卡座组件10，第二NM卡5连接卡连接器11时，卡连接器11的十个弹片一一对应地抵持第二NM卡5的十个金手指，第一弹片11a至第十弹片11j一一对应地抵持第二NM卡5的第一金手指521至第十金手指 5210。
在本实施例中，卡连接器11的第一弹片11a至第十弹片11j排布成两列五排，且第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距和第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距，均大于第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距和第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距，使得卡连接器11的第三弹片11c至第八弹片11h能够一一对应地抵持且电连接Nano SIM卡3的第一金手指321至第六金手指326，卡连接器11的第三弹片11c至第十弹片11j能够一一对应地抵持且电连接第一NM卡4的第一金手指421至第八金手指428，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，因此卡连接器11能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5。在其他一些实施例中，卡连接器11也可以设计为兼容Nano SIM卡3和第二NM卡5。
示例性的，结合参阅图9、图12、图15以及图18，卡连接器11的第二排弹片(11c、11d)与第三排弹片(11e、11f)的中心间距及第三排弹片(11e、11f)与第四排弹片(11g、11h)的中心间距设置在1.5mm至2.8mm的范围内，第一排弹片(11a、11b)与第二排弹片(11c、11d)的中心间距设置在1.0mm至1.7mm的范围内，第四排弹片(11g、11h)与第五排弹片(11i、11j)的中心间距设置在1.0mm至1.7mm的范围内，使得第三弹片11c至第八弹片11h能够分别与Nano SIM卡3的六个金手指通信，第三弹片11c至第十弹片11j能够分别与第一NM卡4的八个金手指通信，第一弹片11a至第十弹片11j能够分别与第二NM卡5的十个金手指通信。
由于Nano SIM卡3、第一NM卡4以及第二NM卡5三种卡的金手指的数量不同，金手指的形状不同，金手指的排布位置以及金手指的间隔距离也不同，通过第一弹片11a至第十弹片11j的间距的独特设计，实现卡连接器11能够在兼容Nano SIM卡3、第一NM卡4以及第二NM卡5的基础上，有效降低当Nano SIM卡3设置于卡连接器11，Nano SIM卡3的金手指与卡连接器11的弹片发生短路的风险，当第一NM卡4设置于卡连接器11，第一NM卡4的金手指与卡连接器11的弹片发生短路的风险，以及当第二NM卡5设置于卡连接器11，第二NM卡5的金手指与卡连接器11的弹片发生短路的风险，使得卡连接器11与Nano SIM卡3、第一NM卡4及第二NM卡5的电连接关系可靠，实现Nano SIM卡3、第一NM卡4以及第二NM卡5可以分时共用同一个卡连接器11。可以理解的是，在其他一些实施例中，卡连接器11也可以设计为能够兼容Nano SIM卡3和第二NM卡5即可的方案。
请参阅图19，图19是图1所示电子设备100的部分电路在一些实施例中的示意框图。
一些实施例中，电子设备100的处理器20包括接口控制器201、一个或多个存储卡控制器202以及SIM卡控制器203。接口控制器201电连接一个或多个存储卡控制器202以及SIM卡控制器203，接口控制器201还电连接卡连接器11的多个弹片。存储卡控制器202用于控制存储卡运行，SIM卡控制器203用于控制Nano SIM卡3运行。当不同的信息卡插入电子设备100的卡座组件10，与卡连接器11电连接时，接口控制器201能够控制存储卡控制器202或SIM卡控制器203经卡连接器11与信息卡通信。例如，当卡托2安装有Nano SIM卡3，Nano SIM卡3插入卡座组件10时，接口控制器201控制SIM卡控制器203经卡连接器11与Nano SIM卡3进行通信；当卡托2安装有第二NM卡5，第二NM卡5插入卡座组件10时，接口控制器201控制存储卡控制器202经卡连接器11与第二NM卡5进行通信。
在本实施例中，电子设备100能够通过处理器20自动识别信息卡类型，并控制与信息卡对应的控制器与卡连接器11导通，使得信息卡能够与电子设备100能够自动匹配，从而进行 通信，提高了用户的使用体验。
其中，处理器20的多个控制器可以为彼此独立的部件，也可以通过集成部件进行组合，也可以一个控制器拆分在多个部件中，本申请实施例对此不作严格限定。其中，接口控制器201中可以包括多个开关，还可以包括导线，多个开关可以分开排布，也可以集中排布，本申请实施例对此不作严格限定。
示例性的，处理器20可以通过多种方式识别与卡连接器11连接的信息卡的类型。例如，处理器20可以依次导通多个控制器与卡连接器11，通过控制器与信息卡的匹配情况识别信息卡的类型。或者，处理器20也可以设有用于检测信息卡类型的检测电路，处理器20能够依据检测电路的检测结果识别信息卡的类型。本申请实施例不对处理器20识别信息卡类型的具体方式进行严格限定。
在一些实施例中，当电子设备100的卡座组件10能够兼容第一NM卡4和第二NM卡5时，存储卡控制器202可以包括有第一存储卡控制器和第二存储卡控制器，第一存储卡控制器用于控制第一NM卡4运行，第二存储卡控制器用于控制第二NM卡5运行。当卡托2安装有第一NM卡4，第一NM卡4插入卡座组件10时，接口控制器201控制第一存储卡控制器经卡连接器11与第一NM卡4进行通信。当卡托2安装有第二NM卡5，第二NM卡5插入卡座组件10时，接口控制器201控制第二存储卡控制器经卡连接器11与第二NM卡5进行通信。
在本申请中，第二NM卡5的卡接口可以有多种实现方式，以下进行举例说明，以下实施例中的第二NM卡5均能够与图5所示卡连接器11连接。
示例性的，第二NM卡5的十个金手指排布成两列五排，第二NM卡5的十个金手指沿宽度方向排布成第一排金手指(521、522)至第五排金手指(529、5210)，第二NM卡5的十个金手指沿长度方向排布成第一列金手指(521、523、525、527、529)和第二列金手指(522、524、526、528、5210)。
在宽度方向上，第二排金手指(523、524)与第三排金手指(525、526)的中心间距和第三排金手指(525、526)与第四排金手指(527、528)的中心间距，大于第一排金手指(521、522)与第二排金手指(523、524)的中心间距，且大于第四排金手指(527、528)与第五排金手指(529、5210)的中心间距。
例如，第二排金手指(523、524)与第三排金手指(525、526)的中心间距可以在1.5mm至2.8mm的范围内，第三排金手指(525、526)与第四排金手指(527、528)的中心间距可以在1.5mm至2.8mm的范围内，第一排金手指(521、522)与第二排金手指(523、524)的中心间距可以在1.0mm至1.7mm的范围内，第四排金手指(527、528)与第五排金手指(529、5210)的中心间距可以在1.0mm至1.7mm的范围内。
请参阅图20，图20是图17所示第二NM卡5在一些实施例中的尺寸图。
一些实施例中，第二NM卡5的十个金手指排布成两列五排，第一列金手指(521、523、525、527、529)靠近第二边5112排布，第二列金手指(522、524、526、528、5210)靠近第四边5114排布，每一列金手指均在宽度方向上对齐排列，第一排金手指(521、522)靠近第一边5111排布，第五排金手指(529、5210)靠近第三边5113排布，每一排金手指均在长度方向上对齐排列。其中，第一金手指521可以设有斜边，形成直角梯形，第一金手指521的斜边面向卡体51的切边5115设置，两者之间的间距可以为0.2mm；第二金手指522至第十金手指5210可以为矩形。
示例性的，在宽度方向上，第二排金手指(523、524)的中心与第一边5111的间距可以 为1.95mm，第三排金手指(525、526)的中心与第一边5111的间距可以为4.25mm，第三排金手指(525、526)的中心与第三边5113的间距可以为4.55mm，第四排金手指(527、528)的中心与第三边5113的间距可以为1.95mm。其中，在宽度方向上，第一排金手指(521、522)与第二排金手指(523、524)的间距可以为0.25mm，第一排金手指(521、522)与第一边5111的间距可以为0.2mm。其中，在宽度方向上，第四排金手指(527、528)与第五排金手指(529、5210)的间距可以为0.25mm，第五排金手指(529、5210)与第三边5113的间距可以为0.2mm。其中，在长度方向上，第一列金手指(521、523、525、527、529)与第二边5112的间距可以为1.1mm，第二列金手指(522、524、526、528、5210)与第四边5114的间距可以为1.1mm。
其中，每个金手指的长度可以为3.2mm，宽度可以为1.0mm。其中，第一金手指521的长度即为其底边的尺寸，第一金手指521的宽度即为其高的尺寸。
其中，上述形状尺寸及间距尺寸的公差为±0.1mm。
请结合参阅图21A和图21B，图21A是图16所示第二NM卡5在另一些实施例中的尺寸图，图21B是图21A所示第二NM卡5的另一尺寸图。
一些实施例中，第二NM卡5的十个金手指排布成两列，第一列金手指(521、523、525、527、529)靠近第二边5112排布，第二列金手指(522、524、526、528、5210)靠近第四边5114排布。其中，第一金手指521至第六金手指526排布成两列三排，每一列金手指均在宽度方向上对齐排列，第一排金手指(521、522)靠近第一边5111排布，每一排金手指均在长度方向上对齐排列。第四排金手指(527、528)在长度方向上对齐排列。其中，第一金手指521可以设有斜边，形成直角梯形，第一金手指521的斜边面向卡体51的切边5115设置，两者之间的间距可以为0.2mm；第二金手指522至第八金手指528可以为矩形。第九金手指529和第十金手指5210可以呈L形。第九金手指529半包围第七金手指527。第九金手指529包括第一部分5291和第二部分，第一部分5291沿长度方向延伸，第二部分5292沿宽度方向延伸。第九金手指529的第一部分5291位于第七金手指527与第三边5113之间，第九金手指529的第二部分5292连接第一部分5291且位于第七金手指527与第二边5112之间。第十金手指5210包括第一部分52101和第二部分52102，第一部分52101沿长度方向延伸，第二部分52102沿宽度方向延伸。第十金手指5210的第一部分52101位于第八金手指528与第三边5113之间，第十金手指5210的第二部分52102连接第一部分5291且位于第八金手指528与第二边5112之间。如上描述，可以将第九金手指529和第十金手指5210理解为第五排金手指(529、5210)。
示例性的，在宽度方向上，第二排金手指(523、524)的中心与第一边5111的间距可以为1.95mm，第三排金手指(525、526)的中心与第一边5111的间距可以为4.25mm，第三排金手指(525、526)的中心与第三边5113的间距可以为4.55mm，第四排金手指(527、528)的中心与第三边5113的间距可以为1.95mm。其中，在宽度方向上，第一排金手指(521、522)与第二排金手指(523、524)的间距可以为0.25mm，第一排金手指(521、522)与第一边5111的间距可以为0.2mm。其中，在宽度方向上，第四排金手指(527、528)与第五排金手指(529、5210)的间距可以为0.25mm，第五排金手指(529、5210)与第三边5113的间距可以为0.2mm。也即，在宽度方向上，第九金手指529与第三边5113的间距可以为0.2mm，第九金手指529的第一部分5291与第七金手指527的间距可以为0.25mm；第十金手指5210与第三边5113的间距可以为0.2mm，第十金手指5210的第一部分52101与第八金手指528的间距可以为0.25mm。其中，第九金手指529的第二部分5292的靠近第一边5111的顶边可 以与第七金手指527的靠近第一边5111的顶边齐平；第十金手指5210的第二部分52102的靠近第一边5111的顶边可以与第八金手指528的靠近第一边5111的顶边齐平。其中，在宽度方向上，第一金手指521至第八金手指528以及第九金手指529的第一部分5291、第十金手指5210的第一部分52101的宽度均可以为1.0mm。
示例性的，在长度方向上，第一金手指521、第三金手指523及第五金手指525与第二边5112的间距可以为1.1mm，第二金手指522、第四金手指524及第六金手指526与第四边5114的间距可以为1.1mm。其中，在长度方向上，第七金手指527的靠近第四边5114的侧边和第九金手指529的第一部分5291的靠近第四边5114的侧边，均可以与第五金手指525靠近第四边5114的侧边齐平；第七金手指527与第九金手指529的第二部分5292的间距可以为0.2mm，第九金手指529与第二边5112的间距可以为0.5mm；第九金手指529的第二部分5292的宽度可以为0.9mm。其中，在长度方向上，第八金手指528的靠近第二边5112的侧边和第十金手指5210的第一部分52101的靠近第二边5112的侧边，均可以与第六金手指526靠近第二边5112的侧边齐平；第八金手指528与第十金手指5210的第二部分52102的间距可以为0.2mm，第十金手指5210与第四边5114的间距可以为0.5mm；第十金手指5210的第二部分52102的宽度可以为0.9mm。
其中，上述形状尺寸及间距尺寸的公差为±0.1mm。
请参阅图22，图22是图16所示第二NM卡5在另一些实施例中的尺寸图。
一些实施例中，第二NM卡5的第一金手指521至第十金手指5210排布成两列五排，第一列金手指(521、523、525、527、529)靠近第二边5112排布，第二列金手指(522、524、526、528、5210)靠近第四边5114排布；第一排金手指(521、522)靠近第一边5111排布，第五排金手指(529、5210)靠近第三边5113排布，每一排金手指均在长度方向上对齐排列。第二NM卡5还包括第十一金手指5220和第十二金手指5230，第十一金手指5220和第十二金手指5230排布于第四排金手指(527、528、5220、5230)，第十一金手指5220位于第二边5112与第七金手指527之间，第十二金手指5230位于第四边5114与第八金手指528之间。其中，第一金手指521可以设有斜边，形成直角梯形，第一金手指521的斜边面向卡体51的切边5115设置，两者之间的间距可以为0.2mm；第二金手指522至第十二金手指5230可以为矩形。
示例性的，在宽度方向上，第二排金手指(523、524)的中心与第一边5111的间距可以为1.95mm，第三排金手指(525、526)的中心与第一边5111的间距可以为4.25mm，第三排金手指(525、526)的中心与第三边5113的间距可以为4.55mm，第四排金手指(527、528、5220、5230)的中心与第三边5113的间距可以为1.95mm。其中，在宽度方向上，第一排金手指(521、522)与第二排金手指(523、524)的间距可以为0.25mm，第一排金手指(521、522)与第一边5111的间距可以为0.2mm。其中，在宽度方向上，第四排金手指(527、528、5220、5230)与第五排金手指(529、5210)的间距可以为0.25mm，第五排金手指(529、5210)与第三边5113的间距可以为0.2mm。其中，在宽度方向上，第一金手指521至第十二金手指5230的宽度均可以为1.0mm。
示例性的，在长度方向上，第一金手指521、第三金手指523及第五金手指525与第二边5112的间距可以为1.1mm，第二金手指522、第四金手指524及第六金手指526与第四边5114的间距可以为1.1mm。其中，在长度方向上，第七金手指527的靠近第四边5114的侧边和第九金手指529的靠近第四边5114的侧边，均可以与第五金手指525靠近第四边5114的侧边齐平；第十一金手指5220的靠近第二边5112的侧边与第九金手指529的靠近第二边 5112的侧边齐平；第七金手指527与第十一金手指5220的间距可以为0.2mm，第十一金手指5220与第二边5112的间距可以为0.5mm，第十一金手指5220的长度可以为0.9mm。其中，在长度方向上，第八金手指528的靠近第二边5112的侧边和第十金手指5210的靠近第二边5112的侧边，均可以与第六金手指526靠近第二边5112的侧边齐平；第十二金手指5230的靠近第四边5114的侧边与第十金手指5210的靠近第四边5114的侧边齐平；第八金手指528与第十二金手指5230的间距可以为0.2mm，第十二金手指5230与第四边5114的间距可以为0.5mm，第十二金手指5230的长度可以为0.9mm。
其中，上述形状尺寸及间距尺寸的公差为±0.1mm。
请参阅图23，图23是图16所示第二NM卡5在另一些实施例中的尺寸图。
一些实施例中，第二NM卡5的第一金手指521至第十金手指5210排布成两列五排，第一列金手指(521、523、525、527、529)靠近第二边5112排布，第二列金手指(522、524、526、528、5210)靠近第四边5114排布，每一列金手指均在宽度方向上对齐排列；第一排金手指(521、522)靠近第一边5111排布，第五排金手指(529、5210)靠近第三边5113排布，每一排金手指均在长度方向上对齐排列。其中，第一金手指521至第十金手指5210均可以为矩形。其中，第一金手指521可以相较于其他金手指更靠近卡体51的切边5115。
示例性的，在宽度方向上，第二排金手指(523、524)的中心与第一边5111的间距可以为1.86mm，第三排金手指(525、526)的中心与第一边5111的间距可以为4.4mm，第三排金手指(525、526)的中心与第三边5113的间距可以为4.4mm，第四排金手指(527、528)的中心与第三边5113的间距可以为1.86mm。其中，第一排金手指(521、522)与第一边5111的间距可以为0.2mm，第五排金手指(529、5210)与第三边5113的间距可以为0.2mm。
示例性的，在长度方向上，第一列金手指(521、523、525、527、529)的中心与第二边5112的间距可以为2.68mm，第二列金手指(522、524、526、528、5210)的中心与第四边5114的间距可以为2.0mm。其中，第二NM卡5的卡体51的长度可以为12.3mm。
其中，上述形状尺寸及间距尺寸的公差为±0.1mm。
可以理解的是，图20至图23所示第二NM卡5的结构尺寸是为第二NM卡5的部分示例，第二NM卡5的卡接口52还可以有更多种金手指排布方式和尺寸，第二NM卡5的卡接口52至少包括第一金手指521至第十金手指5210即可，本申请实施例对此不作严格限定。
以下分别对第二NM卡采用的UFS接口协议、PCIe接口协议以及SD接口协议的方案进行举例说明，同时对能够兼容Nano SIM卡和第二NM卡的电子设备的部分电路进行举例说明。其中，UFS接口协议、PCIe接口协议以及SD接口协议均能够应用于具有第一金手指至第十金手指的第二NM卡中，例如图17、图20至图23所示第二NM卡5及具有其他卡接口结构的第二NM卡，以下实施例以第二NM卡5具有图17所示卡接口52为例进行示意。
一些实施例中，第二NM卡5采用的UFS接口协议。UFS协议是由联合电子设备工程委员会(Joint Electron Device Engineering Council，JEDEC)协会制定的、用于定义UFS通用闪存的电气接口和UFS存储设备的标准。UFS定义了一个完整的协议栈，从上到下依次为应用层、传输层和互联层。UFS定义了一个独特的UFS特性集，并将eMMC标准的特性集作为一个子集，使用MIPI(Mobile Industry Processor Interface，移动产业处理器20接口)联盟的UniPro(接口)作为数据链路层和MIPI的M-PHY(串行接口)作为物理层，两者合起来称之为互连层(UFS InterConnect Layer)。UFS协议自2011年发布了1.0版本，之后于2012年、2013年、2016年、2018年分别发布了1.1版本、2.0版本、2.1版本、3.0版本，每个版本的更新都伴随了速度的提升。UFS协议是eMMC协议4.5版本之后的衔接。UFS协议的主要改 进在于传输层，在数据信号传输上UFS协议采用的是差分串行传输，支持同时读写数据，同时由于差分信号抗干扰能力强、能提供更宽的带宽，而eMMC是并行数据传输，因此相对于前一代协议标准eMMC，UFS协议具有速度快、功耗低的特点。因此，UFS协议具有速度快、功耗低的特点，适用于手机等电子设备。
示例性的，第二NM卡5包括至少十个金手指，例如包括第一金手指521至第十金手指5210。在第一金手指521至第十金手指5210中，四个金手指用于传输数据信号(RX+、RX-、TX+、TX-)，一个金手指用于传输参考时钟信号(RCLK，也可以命名为REF_CLK)，一个金手指用于传输第一电源信号(VCC)、一个金手指用于传输地信号(VSS)、一个金手指用于传输第二电源信号(VCCQ)。此时，第二NM卡5能够支撑UFS协议，实现高速卡的基本性能。
其中，数据信号(RX+)和数据信号(RX-)为输入差分信号；数据信号(TX+)和数据信号(TX-)信号为输出差分信号；第一电源信号(VCC)负责第二NM卡5的闪存颗粒(也即存储电路513)的供电；第二电源信号(VCCQ)负责第二NM卡5的控制电路512的供电。其中，在一些实施例中，第二电源信号(VCCQ)也可以负责第二NM卡5的M-PHY接口、闪存输入输出及其他内部低电压电路的供电。其中，第一电源信号(VCC)的电压可以在1.7V至1.95V的范围内，或者在2.7V至3.6V的范围内。第二电源信号(VCCQ)的电压可以在1.1V至1.3V的范围内。
其中，在第一金手指521至第十金手指5210中，剩余的两个金手指可以均悬空设置；或者，剩余的两个金手指中的其中一个金手指悬空设置，另一个金手指用于传输检测信号(C/D)；或者，剩余两个金手指中的其中一个金手指用于传输检测信号(C/D)，另一个金手指用于传输其他信号；或者，剩余的两个金手指均用于传输检测信号(C/D)。其中，检测信号(C/D)可以为特殊的数据信号，当信息卡与卡连接器电连接，与电子设备通信时，电子设备可以通过检测信号(C/D)识别插入的信息卡是否为第二NM卡5；在一些实施例中，电子设备还可以通过检测信号(C/D)识别插入的第二NM卡5的版本，或者识别插入的第二NM卡5的接口协议。第二NM卡5通过其中至少一个金手指传输检测信号(C/D)，能够降低电子设备识别第二NM卡5的难度。在其他一些实施例中，在第一金手指521至第十金手指5210中，剩余的两个金手指中的一个或两个金手指也可以用于传输其他信号。
以下对采用的UFS接口协议的第二NM卡5的第一种信号排布方式进行举例说明。
请参阅图24，图24是图17所示第二NM卡5在一些实施例中的示意图。
示例性的，第二NM卡5的第一金手指521、第三金手指523、第九金手指529及第十金手指5210用于传输数据信号(RX+、RX-、TX+、TX-)。以下实施例以第一金手指521用于传输数据信号(RX+)、第三金手指523用于传输数据信号(RX-)、第九金手指529用于传输数据信号(TX+)、第十金手指5210用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第一金手指521、第三金手指523、第九金手指529及第十金手指5210传输的数据信号能够互相调换。例如，第一金手指521与第三金手指523传输的数据信号互相调换，第九金手指529与第十金手指5210传输的数据信号互相调换，其他实施例此处不再赘述。
其中，第二金手指522用于传输第二电源信号(VCCQ)；第四金手指524用于传输参考时钟信号(RCLK)；第七金手指527用于传输地信号(VSS)；第八金手指528用于传输第一电源信号(VCC)。其中，第五金手指525可以用于传输检测信号(C/D)。其中，第六金手指526悬空设置。
如下表3所示，表3为卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第 二NM卡5的多个金手指及其传输信号的对应关系表一。第二NM卡5与卡连接器11连接时，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，第二NM卡5的第三金手指523至第八金手指528一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡5的第三金手指523至第十金手指5210一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表3
Figure PCTCN2022137987-appb-000004
在本实施例中，第二NM卡5将UFS协议所需的第二电源信号(VCCQ)排布于第二金手指522，由于第二NM卡5的第二金手指522与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，第二NM卡5的第二金手指522无需与Nano SIM卡3和第一NM卡4复用卡连接器11的同一个弹片，避免第二电源信号(VCCQ)与Nano SIM卡3和第一NM卡4的数据信号共用同一个弹片，以降低Nano SIM卡3和第一NM卡4插入电子设备100、连接卡连接器11时，被第二电源信号(VCCQ)烧坏的风险，电子设备100兼容Nano SIM卡3和第一NM卡4以及第二NM卡5的可靠性较高。此外，第一NM卡4和Nano SIM卡3也无需部署用于避免电路被第二电源信号(VCCQ)烧坏的耐高压设计，能够降低成本。
第二NM卡5将其中一个高速的数据信号(例如RX+)排布于第一金手指521，由于第二NM卡5的第一金手指521与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，因此第一弹片11a连接电子设备100的处理器20的高速数据接口、无需连接低速数据 接口，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第一弹片11a电连接的接口，从而可以降低高速数据接口和低速数据接口切换的难度，简化处理器20的电路，降低设计难度和成本。
此外，由于第二NM卡5的第七金手指527与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器11的第七弹片11g抵持并电连接，第二NM卡5的第七金手指527、Nano SIM卡3的第五金手指325以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因此电子设备100的处理器20可以通过同一个地接口电连接卡连接器11的第七弹片11g，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第七弹片11g电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第八金手指528与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器11的第八弹片11h抵持并电连接，第二NM卡5的第八金手指528、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VCC/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器11的第八弹片11h，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第八弹片11h电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第四金手指524与Nano SIM卡3的第二金手指322位置对应、与第一NM卡4的第二金手指422的位置对应，插入电子设备100时均与卡连接器11的第四弹片11d抵持并电连接，第二NM卡5的第四金手指524用于传输参考时钟信号(RCLK)，Nano SIM卡3的第二金手指322用于传输时钟信号(CLK)，第一NM卡4的第二金手指422用于传输时钟信号(CLK)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第四弹片11d。处理器20均可通过第四弹片11d提供不同频率的时钟信号，无需切换数据接口信号，从而简化处理器20的电路，降低设计复杂度和成本。在一些场景下，当第一NM卡4、第二NM卡5、Nano SIM卡3如能有相同频率的时钟信号时，处理器20则可为三种卡提供相同的时钟信号，不再需要切换，更为简化处理器20设计难度，例如，统一为20MHz的时钟频率。
第二NM卡5的第三金手指523与Nano SIM卡3的第一金手指321位置对应、与第一NM卡4的第一金手指421的位置对应，插入电子设备100时均与卡连接器11的第三弹片11c抵持并电连接，第二NM卡5的第三金手指523用于传输数据信号(例如RX-)，Nano SIM卡3的第一金手指321用于数据信号(DATA)，第一NM卡4的第一金手指421用于传输数据信号(例如DATA1)，第二NM卡5、Nano SIM卡3及第一NM卡可以分时复用第三弹片11c。
第二NM卡5的第五金手指525与Nano SIM卡3的第三金手指323位置对应、与第一NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器11的第五弹片11e抵持并电连接，第二NM卡5的第五金手指525用于传输检测信号(C/D)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第三金手指423用于传输命令和响应信号(CMD)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第五弹片11e。可选的，Nano SIM卡3的编程电压/输入信号(VPP)信号可以不支持，以降低处理器20的设计难度。
第二NM卡5的第九金手指529与第一NM卡4的第七金手指427位置对应，插入电子 设备100时均与卡连接器11的第九弹片11i抵持并电连接，第二NM卡5的第九金手指529用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡5和第一NM卡4可以分时复用第九弹片11i。
第二NM卡5的第十金手指5210与第一NM卡4的第八金手指428位置对应，插入电子设备100时均与卡连接器11的第十弹片11j抵持并电连接，第二NM卡5的第十金手指5210用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡5和第一NM卡4可以分时复用第十弹片11j。
当电子设备100兼容Nano SIM卡3和第二NM卡5、不兼容第一NM卡4时，卡连接器11的第九弹片11i和第十弹片11j也可以为第二NM卡5的独有弹片，第九弹片11i和第十弹片11j均连接高速数据接口，无论电子设备100中插入的信息卡是第二NM卡5还是Nano SIM卡3，处理器20均无需切换与第九弹片11i和第十弹片11j电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
示例性的，第二NM卡5的第四金手指524和第十金手指5210均可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
在本申请实施例中所述的分时复用某一弹片，可以包含当插入不同的信息卡时，提供不同的信号，例如某个弹片，当插入的为第一NM卡4时提供第一NM卡4的金手指所对应的信号，该弹片在放入第二NM卡5时提供的为第二NM卡5的金手指所对应的信号，为分时复用的举例场景。
在其他一些实施例中，第五金手指525可以悬空设置，第六金手指526用于传输C/D信号；或者，第五金手指525和第六金手指526均悬空设置。
请参阅图25，图25是图1所示电子设备100在一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡5，第二NM卡5的卡接口52的信号排布如图24所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，接口控制器201电连接SIM卡控制器203和第二存储卡控制器2022，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。可选的，其中编程电压/输入接口可以不支持，减低处理器20设计难度。图25中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022支持UFS协议。第二存储卡控制器2022包括四个数据接口、参考时钟接口、第二电源接口以及检测接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，参考时钟接口用于传输参考时钟信号(RCLK)，第二电源接口用于传输第二电源信号(VCCQ)，检测接口用于传输检测信号(C/D)。图25中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VCC)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图25中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012以及第三开关2013。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)和SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器11的第三弹片11c，第一开关2011用于导通第三弹片11c与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)和SIM卡控制器203的时钟接口(CLK)，第二开关2012还连接卡连接器11的第四弹片11d，第二开关2012用于导通第四弹片11d与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第三开关2013连接第二存储卡控制器2022的检测接口(C/D)和SIM卡控制器203的编程电压/输入接口(VPP)，第三开关2013还连接卡连接器11的第五弹片11e，第三开关2013用于导通第五弹片11e与第二存储卡控制器2022的检测接口(C/D)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第二存储卡控制器2022的另一个数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器11的第九弹片11i。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器11的第十弹片11j。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。SIM卡控制器203的复位接口(RST)通过接口控制器201电连接卡连接器11的第六弹片11f。
其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二存储卡控制器2022的第二电源接口(VCCQ)与第二弹片11b之间、第二存储卡控制器2022的数据接口(例如TX+)与第九弹片11i之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片11j之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a至第五弹片11e、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)、第二电源信号(VCCQ)以及检测信号(C/D)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，接口控制器201可以不包括第三开关2013，第二存储卡控制器2022的检测接口(C/D)通过接口控制器201电连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
可以理解的是，当第二NM卡5的第五金手指525悬空设置、第六金手指526用于传输检测信号(C/D)时，接口控制器201做适应性调整，例如，接口控制器201包括第四开关2014，可以省去第三开关2013，第二存储卡控制器2022的检测接口(C/D)连接至第四开关2014，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第六弹片11f。当第二NM卡5的第五金手指525和第六金手指526均悬空设置时，第二存储卡控制器2022无需设置检测接口，接口控制器201做适应性调整，例如也可以不设置第四开关2014。
请参阅图26，图26是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5，第二NM卡5的卡接口52信号排布如图24所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图25对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图26中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第一存储卡控制器2021与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)、第一存储卡控制器2021的一个数据接口(例如DATA1)以及SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器11的第三弹片11c，第一开关2011用于导通第三弹片11c与第 二存储卡控制器2022的数据接口(例如RX-)，或者导通第三弹片11c与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)、第一存储卡控制器2021的时钟接口(CLK)以及SIM卡控制器203的时钟接口(CLK)，第二开关2012还连接卡连接器11的第四弹片11d，第二开关2012用于导通第四弹片11d与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第三弹片11c与第一存储卡控制器2021的时钟接口(CLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第三开关2013连接第二存储卡控制器2022的检测接口(C/D)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第三开关2013还连接卡连接器11的第五弹片11e，第三开关2013用于导通第五弹片11e与第二存储卡控制器2022的检测接口(C/D)，或者导通第五弹片11e与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。可选的，检测接口(C/D)或编程电压/输入接口(VPP)可以支持，也可以不支持，以便降低处理器20设计难度。
第四开关2014连接第一存储卡控制器2021的另一个数据接口(例如DATA0)和SIM卡控制器203的复位接口(RST)，第四开关2014还连接卡连接器11的第六弹片11f，第四开关2014用于导通第六弹片11f与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器11的第九弹片11i，第五开关2015用于导通第九弹片11i与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第九弹片11i与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器11的第十弹片11j，第六开关2016用于导通第十弹片11j与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第十弹片11j与第一存储卡控制器2021的数据接口(例如DATA2)。
第二存储卡控制器2022的另一数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二电源接口(VCCQ)与第二弹片11b之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进 行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器11时，接口控制器201导通第一存储卡控制器2021与卡连接器11，第一存储卡控制器2021经卡连接器11的第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a至第五弹片11e、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)、第二电源信号(VCCQ)以及检测信号(C/D)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，第三开关2013连接第二存储卡控制器2022的检测接口(C/D)和第一存储卡控制器2021的命令和响应复用接口(CMD)，第三开关2013还连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
可以理解的是，当第二NM卡5的第五金手指525悬空设置、第六金手指526用于传输检测信号(C/D)时，接口控制器201做适应性调整，例如，第二存储卡控制器2022的检测接口(C/D)连接至第四开关2014，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第六弹片11f。当第二NM卡5的第五金手指525和第六金手指526均悬空设置时，第二存储卡控制器2022无需设置检测接口，接口控制器201做适应性调整。
以下对采用的UFS接口协议的第二NM卡5的第二种信号排布方式进行举例说明。
请参阅图27，图27是图17所示第二NM卡5在另一些实施例中的示意图。
示例性的，第二NM卡5的第一金手指521、第五金手指525、第九金手指529及第十金手指5210用于传输数据信号。以下实施例以第一金手指521用于传输数据信号(RX+)、第五金手指525用于传输数据信号(RX-)、第九金手指529用于传输数据信号(TX+)、第十金手指5210用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第一金手指521、第五金手指525、第九金手指529及第十金手指5210传输的数据信号能够互相调换。例如，第一金手指521与第五金手指525传输的数据信号互相调换，第九金手指529与第十金手指5210传输的数据信号互相调换，其他实施例此处不再赘述。
其中，第二金手指522用于传输第二电源信号(VCCQ)；第四金手指524用于传输参考时钟信号(RCLK)；第七金手指527用于传输地信号(VSS)；第八金手指528用于传输第一电源信号(VCC)。其中，第三金手指523和第六金手指526悬空设置。
如下表4所示，表4为卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡5的多个金手指及其传输信号的对应关系表二。第二NM卡5与卡连接器11连接 时，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，第二NM卡5的第三金手指523至第八金手指528一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡5的第三金手指523至第十金手指5210一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表4
Figure PCTCN2022137987-appb-000005
在本实施例中，第二NM卡5将UFS协议所需的第二电源信号(VCCQ)排布于第二金手指522，由于第二NM卡5的第二金手指522与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，第二NM卡5的第二金手指522无需与Nano SIM卡3和第一NM卡4复用卡连接器11的同一个弹片，避免第二电源信号(VCCQ)与Nano SIM卡3和第一NM卡4的数据信号共用同一个弹片，以降低Nano SIM卡3和第一NM卡4插入电子设备100、连接卡连接器11时，被第二电源信号(VCCQ)烧坏的风险，电子设备100兼容Nano SIM卡3和第一NM卡4以及第二NM卡5的可靠性较高。此外，第一NM卡4和Nano SIM卡3也无需部署用于避免电路被第二电源信号(VCCQ)烧坏的耐高压设计，能够降低成本。
第二NM卡5将其中一个高速的数据信号(例如RX+)排布于第一金手指521，由于第二NM卡5的第一金手指521与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，因此第一弹片11a连接电子设备100的处理器20的高速数据接口、无需连接低速数据接口，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4， 处理器20均无需切换与第一弹片11a电连接的接口，从而可以降低高速数据接口和低速数据接口切换的难度，简化处理器20的电路，降低设计难度和成本。
此外，由于第二NM卡5的第七金手指527与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器11的第七弹片11g抵持并电连接，第二NM卡5的第七金手指527、Nano SIM卡3的第五金手指325以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因此电子设备100的处理器20可以通过同一个地接口电连接卡连接器11的第七弹片11g，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第七弹片11g电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第八金手指528与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器11的第八弹片11h抵持并电连接，第二NM卡5的第八金手指528、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VCC/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器11的第八弹片11h，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第八弹片11h电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第四金手指524与Nano SIM卡3的第二金手指322位置对应、与第一NM卡4的第二金手指422的位置对应，插入电子设备100时均与卡连接器11的第四弹片11d抵持并电连接，第二NM卡5的第四金手指524用于传输参考时钟信号(RCLK)，Nano SIM卡3的第二金手指322用于传输时钟信号(CLK)，第一NM卡4的第二金手指422用于传输时钟信号(CLK)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第四弹片11d。处理器20均可通过第四弹片11d提供不同频率的时钟信号，无需切换数据接口信号，从而简化处理器20的电路，降低设计复杂度和成本。在一些场景下，当第一NM卡4、第二NM卡5、Nano SIM卡3如能有相同频率的时钟信号时，处理器20则可为三种卡提供相同的时钟信号，不再需要切换，更为简化处理器20设计难度，例如，统一为20MHz的时钟频率。
第二NM卡5的第五金手指525与Nano SIM卡3的第三金手指323位置对应、与第一NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器11的第五弹片11e抵持并电连接，第二NM卡5的第五金手指525用于传输数据信号(例如RX-)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第三金手指423用于传输命令和响应信号(CMD)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第五弹片11e。其中，第二NM卡5的第五金手指525的高速数据信号与第一NM卡4的第三金手指423的命令和响应信号(CMD)复用同一个弹片，不与第一NM卡4的低速数据信号复用同一个弹片，相比较于高速数据信号和低速数据信号复用同一个弹片并进行接口切换的方案，本方案设计难度较小。可选的，编程电压/输入信号(VPP)可以不支持，以降低处理器20设计难度。
第二NM卡5的第九金手指529与第一NM卡4的第七金手指427位置对应，插入电子设备100时均与卡连接器11的第九弹片11i抵持并电连接，第二NM卡5的第九金手指529用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡5和第一NM卡4可以分时复用第九弹片11i。
第二NM卡5的第十金手指5210与第一NM卡4的第八金手指428位置对应，插入电 子设备100时均与卡连接器11的第十弹片11j抵持并电连接，第二NM卡5的第十金手指5210用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡5和第一NM卡4可以分时复用第十弹片11j。
当电子设备100兼容Nano SIM卡3和第二NM卡5、不兼容第一NM卡4时，卡连接器11的第九弹片11i和第十弹片11j也可以为第二NM卡5的独有弹片，第九弹片11i和第十弹片11j均连接高速数据接口，无论电子设备100中插入的信息卡是第二NM卡5还是Nano SIM卡3，处理器20均无需切换与第九弹片11i和第十弹片11j电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
示例性的，第二NM卡5的第四金手指524和第十金手指5210均可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
在其他一些实施例中，第三金手指523和第六金手指526中的一者可以用于传输检测信号(C/D)，另一者可以悬空设置或者用于传输其他信号；或者，第三金手指523和第六金手指526均用于传输检测信号(C/D)。第二NM卡5通过至少一个金手指传输检测信号(C/D)，能够降低电子设备100识别第二NM卡5的难度。其中，当第三金手指523或第六金手指526用于传输检测信号(C/D)时，第二NM卡5、Nano SIM卡3及第一NM卡4对应地可以分时复用第三弹片11c或第六弹片11f。
请参阅图28，图28是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡5，第二NM卡5的卡接口52信号排布如图27所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。图28中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022包括四个数据接口、参考时钟接口以及第二电源接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，参考时钟接口用于传输参考时钟信号(RCLK)，第二电源接口用于传输第二电源信号(VCCQ)。图28中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VCC)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图28中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022 独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011和第二开关2012。
第一开关2011连接第二存储卡控制器2022的参考时钟接口(RCLK)和SIM卡控制器203的时钟接口(CLK)，第一开关2011还连接卡连接器11的第四弹片11d，第一开关2011用于导通第四弹片11d与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第二开关2012连接第二存储卡控制器2022的一个数据接口(例如RX-)和SIM卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。可选的，编程电压/输入接口(VPP)可以支持，也可以不支持，以降低处理器20设计难度。
第二存储卡控制器2022的另一个数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器11的第九弹片11i。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器11的第十弹片11j。SIM卡控制器203的数据接口(DATA)通过接口控制器201电连接卡连接器11的第三弹片11c。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。SIM卡控制器203的复位接口(RST)通过接口控制器201电连接卡连接器11的第六弹片11f。
其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二存储卡控制器2022的第二电源接口(VCCQ)与第二弹片11b之间、第二存储卡控制器2022的数据接口(例如TX+)与第九弹片11i之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片11j之间、SIM卡控制器203的数据接口(DATA)与第三弹片11c之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a、第二弹片11b、第四弹片11d、第五弹片11e、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS) 的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，接口控制器201可以不包括第二开关2012，第二存储卡控制器2022的一个数据接口(例如RX-)通过接口控制器201电连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
请参阅图29，图29是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5，第二NM卡5的卡接口52信号排布如图27所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图28对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图29中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第一存储卡控制器2021与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第二存储卡控制器2022的参考时钟接口(RCLK)、第一存储卡控制器2021的时钟接口(CLK)以及SIM卡控制器203的时钟接口(CLK)，第一开关2011还连接卡连接器11的第四弹片11d，第一开关2011用于导通第四弹片11d与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第三弹片11c与第一存储卡控制器2021的时钟接口(CLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第二开关2012连接第二存储卡控制器2022的一个数据接口(例如RX-)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第五弹片11e与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第三开关2013连接第一存储卡控制器2021的一个数据接口(例如DATA1)以及SIM卡控制器203的数据接口(DATA)，第三开关2013还连接卡连接器11的第三弹片11c，第三开关2013用于导通第三弹片11c与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第四开关2014连接第一存储卡控制器2021的另一个数据接口(例如DATA0)和SIM卡 控制器203的复位接口(RST)，第四开关2014还连接卡连接器11的第六弹片11f，第四开关2014用于导通第六弹片11f与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器11的第九弹片11i，第五开关2015用于导通第九弹片11i与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第九弹片11i与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器11的第十弹片11j，第六开关2016用于导通第十弹片11j与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第十弹片11j与第一存储卡控制器2021的数据接口(例如DATA2)。
第二存储卡控制器2022的另一数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二电源接口(VCCQ)与第二弹片11b之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器11时，接口控制器201导通第一存储卡控制器2021与卡连接器11，第一存储卡控制器2021经卡连接器11的第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a、第二弹片11b、第四弹片11d、第五弹片11e、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，第二开关2012连接第二存储卡控制器2022的一个数据接口(例如RX-)和第一存储卡控制器2021的命令和响应复用接口(CMD)，第二开关2012还连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
可以理解的是，当第二NM卡5的第三金手指523或第六金手指526用于传输检测信号(C/D)时，在兼容该第二NM卡5电子设备100中，第二存储卡控制器2022还包括检测接口，检测接口用于传输检测信号(C/D)，接口控制器201还用于在第二NM卡5插入电子设备100时，导通检测接口与对应的第三弹片11c或第六弹片11f。其中，接口控制器201通过开关连接第三弹片11c或第六弹片11f，该开关还连接第二存储卡控制器2022的检测接口。
以下对采用的UFS接口协议的第二NM卡5的第三种信号排布方式进行举例说明。
请参阅图30，图30是图17所示第二NM卡5在另一些实施例中的示意图。
示例性的，第二NM卡5的第一金手指521、第五金手指525、第九金手指529及第十金手指5210用于传输数据信号。以下实施例以第一金手指521用于传输数据信号(RX+)、第五金手指525用于传输数据信号(RX-)、第九金手指529用于传输数据信号(TX+)、第十金手指5210用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第一金手指521、第五金手指525、第九金手指529及第十金手指5210传输的数据信号能够互相调换。例如，第一金手指521与第五金手指525传输的数据信号互相调换，第九金手指529与第十金手指5210传输的数据信号互相调换，其他实施例此处不再赘述。
其中，第二金手指522用于传输第二电源信号(VCCQ)；第六金手指526用于传输参考时钟信号(RCLK)；第七金手指527用于传输地信号(VSS)；第八金手指528用于传输第一电源信号(VCC)。其中，第三金手指523和第四金手指524悬空设置。
如下表5所示，表5为卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡5的多个金手指及其传输信号的对应关系表三。第二NM卡5与卡连接器11连接时，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，第二NM卡5的第三金手指523至第八金手指528一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡5的第三金手指523至第十金手指5210一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表5
Figure PCTCN2022137987-appb-000006
Figure PCTCN2022137987-appb-000007
在本实施例中，第二NM卡5将UFS协议所需的第二电源信号(VCCQ)排布于第二金手指522，由于第二NM卡5的第二金手指522与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，第二NM卡5的第二金手指522无需与Nano SIM卡3和第一NM卡4复用卡连接器11的同一个弹片，避免第二电源信号(VCCQ)与Nano SIM卡3和第一NM卡4的数据信号共用同一个弹片，以降低Nano SIM卡3和第一NM卡4插入电子设备100、连接卡连接器11时，被第二电源信号(VCCQ)烧坏的风险，电子设备100兼容Nano SIM卡3和第一NM卡4以及第二NM卡5的可靠性较高。此外，第一NM卡4和Nano SIM卡3也无需部署用于避免电路被第二电源信号(VCCQ)烧坏的耐高压设计，能够降低成本。
第二NM卡5将其中一个高速的数据信号(例如RX+)排布于第一金手指521，由于第二NM卡5的第一金手指521与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，因此第一弹片11a连接电子设备100的处理器20的高速数据接口、无需连接低速数据接口，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第一弹片11a电连接的接口，从而可以降低高速数据接口和低速数据接口切换的难度，简化处理器20的电路，降低设计难度和成本。
此外，由于第二NM卡5的第七金手指527与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器11的第七弹片11g抵持并电连接，第二NM卡5的第七金手指527、Nano SIM卡3的第五金手指325以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因此电子设备100的处理器20可以通过同一个地接口电连接卡连接器11的第七弹片11g，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第七弹片11g电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第八金手指528与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器11的第八弹片11h抵持并电连接，第二NM卡5的第八金手指528、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VCC/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器11的第八弹片11h，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第八弹片11h电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第五金手指525与Nano SIM卡3的第三金手指323位置对应、与第一 NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器11的第五弹片11e抵持并电连接，第二NM卡5的第五金手指525用于传输数据信号(例如RX-)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第一金手指421用于传输命令和响应信号(CMD)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第五弹片11e。
第二NM卡5的第六金手指526与Nano SIM卡3的第四金手指324位置对应、与第一NM卡4的第四金手指424的位置对应，插入电子设备100时均与卡连接器11的第六弹片11f抵持并电连接，第二NM卡5的第六金手指526用于传输参考时钟信号(RCLK)，Nano SIM卡3的第四金手指324用于传输复位信号(RST)，第一NM卡4的第四金手指424用于传输数据信号(例如DATA0)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第六弹片11f。
第二NM卡5的第九金手指529与第一NM卡4的第七金手指427位置对应，插入电子设备100时均与卡连接器11的第九弹片11i抵持并电连接，第二NM卡5的第九金手指529用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡5和第一NM卡4可以分时复用第九弹片11i。
第二NM卡5的第十金手指5210与第一NM卡4的第八金手指428位置对应，插入电子设备100时均与卡连接器11的第十弹片11j抵持并电连接，第二NM卡5的第十金手指5210用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡5和第一NM卡4可以分时复用第十弹片11j。
当电子设备100兼容Nano SIM卡3和第二NM卡5、不兼容第一NM卡4时，卡连接器11的第九弹片11i和第十弹片11j也可以为第二NM卡5的独有弹片，第九弹片11i和第十弹片11j均连接高速数据接口，无论电子设备100中插入的信息卡是第二NM卡5还是Nano SIM卡3，处理器20均无需切换与第九弹片11i和第十弹片11j电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
示例性的，第二NM卡5的第四金手指524和第十金手指5210均可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。其中，当第四金手指524悬空设置时，不形成第二NM卡5的接口时，第四金手指524也可以不电连接耐高压电路或保护开关。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
在本实施例中，第二NM卡5的第三金手指523和第四金手指524悬空设置时，简化了电连接器的第三弹片11c和第四弹片11d对应的接口连接电路，使得电子设备100更易兼容Nano SIM卡3和第二NM卡5。在其他一些实施例中，第三金手指523和第四金手指524中的一者可以用于传输检测信号(C/D)，另一者可以悬空设置或者用于传输其他信号；或者，第三金手指523和第四金手指524均用于传输检测信号(C/D)。第二NM卡5通过至少一个金手指传输检测信号(C/D)，能够降低电子设备100识别第二NM卡5的难度。其中，当第三金手指523或第四金手指524用于传输检测信号(C/D)时，第二NM卡5、Nano SIM卡3及第一NM卡4对应地可以分时复用第三弹片11c或第四弹片11d。
请参阅图31，图31是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡5，第二NM卡5的卡接口52信号排布如图30所示。电子设备100的处理器20包括接口控制器 201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。图31中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022包括四个数据接口、参考时钟接口以及第二电源接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，参考时钟接口用于传输参考时钟信号(RCLK)，第二电源接口用于传输第二电源信号(VCCQ)。图31中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VCC)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图31中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011和第二开关2012。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)和SIM卡控制器203的编程电压/输入接口(VPP)，第一开关2011还连接卡连接器11的第五弹片11e，第一开关2011用于导通第五弹片11e与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)和SIM卡控制器203的复位接口(RST)，第二开关2012还连接卡连接器11的第六弹片11f，第二开关2012用于导通第六弹片11f与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第二存储卡控制器2022的另一个数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器11的第九弹片11i。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器11的第十弹片11j。SIM卡控制器203的数据接口(DATA)通过接口控制器201电连接卡连接器11的第三弹片11c。SIM卡控制器203的时钟接口(CLK)通过接口控制器201电连接卡连接器11的第四弹片11d。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。
其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二存 储卡控制器2022的第二电源接口(VCCQ)与第二弹片11b之间、第二存储卡控制器2022的数据接口(例如TX+)与第九弹片11i之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片11j之间、SIM卡控制器203的数据接口(DATA)与第三弹片11c之间、SIM卡控制器203的时钟接口(CLK)与第四弹片11d之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a、第二弹片11b、第五弹片11e、第六弹片11f、第九弹片11i及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，接口控制器201可以不包括第一开关2011，第二存储卡控制器2022的一个数据接口(例如RX-)通过接口控制器201连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
请参阅图32，图32是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5，第二NM卡5的卡接口52信号排布如图30所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图31对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图31中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第一存储卡控制器2021与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制 器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第一开关2011还连接卡连接器11的第五弹片11e，第一开关2011用于导通第五弹片11e与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第五弹片11e与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)、第一存储卡控制器2021的一个数据接口(例如DATA0)以及SIM卡控制器203的复位接口(RST)，第二开关2012还连接卡连接器11的第六弹片11f，第二开关2012用于导通第六弹片11f与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第六弹片11f与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第三开关2013连接第一存储卡控制器2021的另一个数据接口(例如DATA1)以及SIM卡控制器203的数据接口(DATA)，第三开关2013还连接卡连接器11的第三弹片11c，第三开关2013用于导通第三弹片11c与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第四开关2014连接第一存储卡控制器2021的时钟接口(CLK)和SIM卡控制器203的时钟接口(CLK)，第四开关2014还连接卡连接器11的第四弹片11d，第四开关2014用于导通第四弹片11d与第一存储卡控制器2021的时钟接口(CLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器11的第九弹片11i，第五开关2015用于导通第九弹片11i与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第九弹片11i与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器11的第十弹片11j，第六开关2016用于导通第十弹片11j与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第十弹片11j与第一存储卡控制器2021的数据接口(例如DATA2)。
第二存储卡控制器2022的另一数据接口(例如RX+)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的第二电源接口(VCCQ)通过接口控制器201电连接卡连接器11的第二弹片11b。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。其中，在第二存储卡控制器2022的数据接口(例如RX+)与第一弹片11a之间、第二电源接口(VCCQ)与第二弹片11b之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203 经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器11时，接口控制器201导通第一存储卡控制器2021与卡连接器11，第一存储卡控制器2021经卡连接器11的第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a、第二弹片11b、第五弹片11e、第六弹片11f、第九弹片11i及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)和第一存储卡控制器2021的命令和响应复用接口(CMD)，第一开关2011还连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
可以理解的是，当第二NM卡5的第三金手指523或第四金手指524用于传输检测信号(C/D)时，在兼容该第二NM卡5电子设备100中，第二存储卡控制器2022还包括检测接口，检测接口用于传输检测信号(C/D)，接口控制器201还用于在第二NM卡5插入电子设备100时，导通检测接口与对应的第三弹片11c或第六弹片11f。其中，接口控制器201通过开关连接第三弹片11c或第四弹片11d，该开关还连接第二存储卡控制器2022的检测接口。
一些实施例中，第二NM卡采用的PCIe接口协议。PCIe又称为PCI Express，是一种分层协议，由事务层、数据链路层和物理层组成。它的主要优势就是数据传输速率高，另外还有抗干扰能力强、传输距离远、功耗低等优点。PCI Express的传输方式由PCI的并行改为串行，通过使用差分信号传输(differential transmission)。这种传输方式将相同内容通过一正一反镜像传输以提高干扰被发现和纠正的效率，并且PCI Express可以采用全双工，因此PCI Express的传输效率相较PCI大大提升。自2001年起，PCI Express从1.0版本在20年间更新至5.0版本，且在2021年将会正式更新至6.0版本，无疑PCI Express是流行的传输总线标准。对于PCIe1.0，带宽达到PCI的近两倍，而在2021年计划发布的PCI Express6.0带宽最高可达256GB/s。2018年，SD Association正式宣布SD(Secure Digital)卡兼容PCI Express通道，PCI Express兼容于移动存储卡成为现实，对于NM卡来说，PCI Express具有提供大带宽的优势。
示例性的，第二NM卡5包括至少十个金手指，例如包括第一金手指521至第十金手指 5210。在第一金手指521至第十金手指5210中，四个金手指用于传输数据信号(RX+、RX-、TX+、TX-)，两个金手指用于传输时钟信号(CLK+、CLK-)，一个金手指用于传输第一电源信号(VDD1)、一个金手指用于传输地信号(VSS)、一个金手指用于传输第二电源信号(VDD2)。其中，在第一金手指521至第十金手指5210中，其中一个金手指可以悬空设置。此时，第二NM卡5能够支撑PCIe接口协议，实现高速卡的基本性能。
其中，数据信号(RX+)和数据信号(RX-)为输入差分信号；数据信号(TX+)和数据信号(TX-)信号为输出差分信号；时钟信号(CLK+)和时钟信号(CLK-)为差分低压时钟信号。第一电源信号(VDD1)负责第二NM卡5的存储电路513的供电；第二电源信号(VDD2)负责第二NM卡5的控制电路512的供电。其中，第一电源信号(VDD1)的电压高于第二电源信号(VDD2)的电压。例如，第一电源信号(VDD1)的电压可以在2.7V至3.6V的范围内，第二电源信号(VDD2)的电压可以在1.70V至1.95V的范围内。
在其他一些实施例中，在第一金手指521至第十金手指5210中，其中一个金手指不悬空设置，用于传输检测信号(C/D)。其中，检测信号(C/D)可以为特殊的数据信号，当信息卡与卡连接器11电连接，与电子设备100通信时，电子设备100可以通过检测信号(C/D)识别插入的信息卡是否为第二NM卡5；在一些实施例中，电子设备100还可以通过检测信号(C/D)识别插入的第二NM卡5的版本，或者识别插入的第二NM卡5的接口协议。第二NM卡5通过其中一个金手指传输检测信号(C/D)，能够降低电子设备100识别第二NM卡5的难度。
以下对采用的PCIe接口协议的第二NM卡5的第一种信号排布方式进行举例说明。
请参阅图33，图33是图17所示第二NM卡5在另一些实施例中的示意图。
示例性的，第二NM卡5的第三金手指523、第六金手指526、第九金手指529及第十金手指5210用于传输数据信号。以下实施例以第三金手指523用于传输数据信号(RX-)、第六金手指526用于传输数据信号(RX+)、第九金手指529用于传输数据信号(TX+)、第十金手指5210用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第三金手指523、第六金手指526、第九金手指529及第十金手指5210传输的数据信号能够互相调换。例如，第三金手指523与第六金手指526传输的数据信号互相调换，第九金手指529与第十金手指5210传输的数据信号互相调换，其他实施例此处不再赘述。
其中，第二金手指522和第五金手指525用于传输时钟信号。以下实施例以第二金手指522用于传输时钟信号(CLK-)、第五金手指525用于传输时钟信号(CLK+)，为例进行说明。在其他一些实施例中，第二金手指522和第五金手指525传输的时钟信号能够互相调换。
其中，第一金手指521用于传输第二电源信号(VDD2)；第七金手指527用于传输地信号(VSS)；第八金手指528用于传输第一电源信号(VDD1)。其中，第四金手指524悬空设置。
如下表6所示，表6为卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡5的多个金手指及其传输信号的对应关系表四。第二NM卡5与卡连接器11连接时，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，第二NM卡5的第三金手指523至第八金手指528一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡5的第三金手指523至第十金手指5210一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表6
Figure PCTCN2022137987-appb-000008
在本实施例中，第二NM卡5将PCIe协议所需的第二电源信号(VDD2)排布于第一金手指521，由于第二NM卡5的第一金手指521与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，第二NM卡5的第一金手指521无需与Nano SIM卡3和第一NM卡4复用卡连接器11的同一个弹片，避免第二电源信号(VDD2)与Nano SIM卡3和第一NM卡4的数据信号共用同一个弹片，以降低Nano SIM卡3和第一NM卡4插入电子设备100、连接卡连接器11时，被第二电源信号(VDD2)烧坏的风险，电子设备100兼容Nano SIM卡3和第一NM卡4以及第二NM卡5的可靠性较高。此外，第一NM卡4和Nano SIM卡3也无需部署用于避免电路被第二电源信号(VDD2)烧坏的耐高压设计，能够降低成本。
第二NM卡5将其中一个时钟信号(例如CLK-)排布于第二金手指522，由于第二NM卡5的第二金手指522与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，因此无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第一弹片11a电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
此外，由于第二NM卡5的第七金手指527与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器11的第七弹片11g抵持并电连接，第二NM卡5的第七金手指527、Nano SIM卡3的第五金手指325以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因 此电子设备100的处理器20可以通过同一个地接口电连接卡连接器11的第七弹片11g，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第七弹片11g电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第八金手指528与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器11的第八弹片11h抵持并电连接，第二NM卡5的第八金手指528、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VDD1/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器11的第八弹片11h，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第八弹片11h电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第三金手指523与Nano SIM卡3的第一金手指321位置对应、与第一NM卡4的第一金手指421的位置对应，插入电子设备100时均与卡连接器11的第三弹片11c抵持并电连接，第二NM卡5的第三金手指523用于传输数据信号(例如RX-)，Nano SIM卡3的第一金手指321用于数据信号(DATA)，第一NM卡4的第一金手指421用于传输数据信号(例如DATA1)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第三弹片11c。
第二NM卡5的第五金手指525与Nano SIM卡3的第三金手指323位置对应、与第一NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器11的第五弹片11e抵持并电连接，第二NM卡5的第五金手指525用于传输另一个时钟信号(例如CLK+)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第一金手指421用于传输命令和响应信号(CMD)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第五弹片11e。
第二NM卡5的第六金手指526与Nano SIM卡3的第四金手指324位置对应、与第一NM卡4的第四金手指424的位置对应，插入电子设备100时均与卡连接器11的第六弹片11f抵持并电连接，第二NM卡5的第六金手指526用于传输另一个数据信号(例如RX+)，Nano SIM卡3的第四金手指324用于传输复位信号(RST)，第一NM卡4的第四金手指424用于传输数据信号(例如DATA0)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第六弹片11f。
第二NM卡5的第九金手指529与第一NM卡4的第七金手指427位置对应，插入电子设备100时均与卡连接器11的第九弹片11i抵持并电连接，第二NM卡5的第九金手指529用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡5和第一NM卡4可以分时复用第九弹片11i。
第二NM卡5的第十金手指5210与第一NM卡4的第八金手指428位置对应，插入电子设备100时均与卡连接器11的第十弹片11j抵持并电连接，第二NM卡5的第十金手指5210用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡5和第一NM卡4可以分时复用第十弹片11j。
当电子设备100兼容Nano SIM卡3和第二NM卡5、不兼容第一NM卡4时，卡连接器11的第九弹片11i和第十弹片11j也可以为第二NM卡5的独有弹片，第九弹片11i和第十弹片11j均连接高速数据接口，无论电子设备100中插入的信息卡是第二NM卡5还是Nano SIM卡3，处理器20均无需切换与第九弹片11i和第十弹片11j电连接的接口，从而可以简 化处理器20的电路，降低设计难度和成本。
示例性的，第二NM卡5的第三金手指523、第十金手指5210可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
在其他一些实施例中，第四金手指524也可以不悬空设置，用于传输检测信号(C/D)。
在其他一些实施例中，第二NM卡5的第二金手指522悬空设置或者用于传输检测信号(C/D)，第四金手指524用于传输时钟信号(例如CLK-)。第四金手指524和第五金手指525传输的时钟信号可以互相调换。
请参阅图34，图34是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡5，第二NM卡5的卡接口52信号排布如图33所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。图34中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022包括四个数据接口、两个时钟接口以及第二电源接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，两个时钟接口用于传输时钟信号(CLK+、CLK-)，第二电源接口用于传输第二电源信号(VDD2)。图34中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VDD1)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图34中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012以及第三开关2013。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)和SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器11的第三弹片11c，第一开关2011用于导通第三弹片11c与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的其中一个时钟接口(例如CLK+)和SIM 卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的时钟接口(例如CLK+)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第三开关2013连接第二存储卡控制器2022的另一个数据接口(例如RX+)和SIM卡控制器203的复位接口(RST)，第三开关2013还连接卡连接器11的第六弹片11f，第三开关2013用于导通第六弹片11f与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第二存储卡控制器2022的第二电源接口(VDD2)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的另一个时钟接口(例如CLK-)通过接口控制器201电连接卡连接器11的第二弹片11b。第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器11的第九弹片11i。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器11的第十弹片11j。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。SIM卡控制器203的时钟接口(CLK)通过接口控制器201电连接卡连接器11的第四弹片11d。
其中，在第二存储卡控制器2022的第二电源接口(VDD2)与第一弹片11a之间、第二存储卡控制器2022的时钟接口(例如CLK-)与第二弹片11b之间、SIM卡控制器203的时钟接口(CLK)与第四弹片11d之间、第二存储卡控制器2022的数据接口(例如TX+)与第九弹片11i之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片11j之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a至第三弹片11c、第五弹片11e和第六弹片11f、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、时钟信号(CLK+、CLK-)、以及第二电源信号(VDD2)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VDD1)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
示例性的，第二NM卡5的第三金手指523、第十金手指5210可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
可以理解的是，当第二NM卡5的第四金手指524用于传输检测信号(C/D)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第四弹片11d。
在其他一些实施例中，当第二NM卡5的第二金手指522悬空设置，第四金手指524用于传输时钟信号(例如CLK-)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的时钟接口(例如CLK-)与第四弹片11d。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，接口控制器201可以不包括第二开关2012，第二存储卡控制器2022的一个时钟接口(例如CLK+)通过接口控制器201电连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
请参阅图35，图35是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5，第二NM卡5的卡接口52信号排布如图33所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图34对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图35中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第一存储卡控制器2021与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)、第一存储卡控制器2021的一个数据接口(例如DATA1)以及SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器11的第三弹片11c，第一开关2011用于导通第三弹片11c与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第三弹片11c与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的其中一个时钟接口(CLK+)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的时钟接口(CLK+)，或者导通第五弹片11e与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第五弹片11e与SIM卡控制器203的 编程电压/输入接口(VPP)。
第三开关2013连接第二存储卡控制器2022的另一个数据接口(例如RX+)、第一存储卡控制器2021的另一个数据接口(例如DATA0)和SIM卡控制器203的复位接口(RST)，第三开关2013还连接卡连接器11的第六弹片11f，第三开关2013用于导通第六弹片11f与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第六弹片11f与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第四开关2014连接第一存储卡控制器2021的时钟接口(CLK)和SIM卡控制器203的时钟接口(CLK)，第四开关2014还连接卡连接器11的第四弹片11d，第四开关2014用于导通第三弹片11c与第一存储卡控制器2021的时钟接口(CLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器11的第九弹片11i，第五开关2015用于导通第九弹片11i与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第九弹片11i与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器11的第十弹片11j，第六开关2016用于导通第十弹片11j与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第十弹片11j与第一存储卡控制器2021的数据接口(例如DATA2)。
第二存储卡控制器2022的第二电源接口(VDD2)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的另一个时钟接口(例如CLK-)通过接口控制器201电连接卡连接器11的第二弹片11b。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。其中，在第二存储卡控制器2022的第二电源接口(VDD2)与第一弹片11a之间、第二存储卡控制器2022的时钟接口(例如CLK-)与第二弹片11b之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器11时，接口控制器201导通第一存储卡控制器2021与卡连接器11，第一存储卡控制器2021经卡连接器11的第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a至第三弹片11c、第五弹片11e和第六弹片11f、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、时钟信号(CLK+、CLK-)、以及第二电源信号(VDD2)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VDD1)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
可以理解的是，当第二NM卡5的第四金手指524用于传输检测信号(C/D)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第四弹片11d。
在其他一些实施例中，当第二NM卡5的第二金手指522悬空设置，第四金手指524用于传输时钟信号(例如CLK-)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的时钟接口(例如CLK-)与第四弹片11d。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，第二开关2012连接第二存储卡控制器2022的其中一个时钟接口(CLK+)和第一存储卡控制器2021的命令和响应复用接口(CMD)，第二开关2012还连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
以下对采用的PCIe接口协议的第二NM卡5的第二种信号排布方式进行举例说明。
请结合参阅图36至图38，图36是图17所示第二NM卡5在另一些实施例中的示意图，图37是图1所示电子设备100在另一些实施例中的部分电路的示意图，图38是图1所示电子设备100在另一些实施例中的部分电路的示意图。
图36所示第二NM卡5与图33所示第二NM卡5的主要区别在于，第二NM卡5的第一金手指521用于传输时钟信号(例如CLK-)，第二金手指522用于传输第二电源信号(VDD2)。也即，图36所示第二NM卡5与图33所示第二NM卡5的第一金手指521和第二金手指522传输的信号互相调换。其中，第一金手指521与第五金手指525传输的时钟信号能够互相调换。图36所示第二NM卡5的其他方案内容可以参考图33所示第二NM卡5的相关描述，此处不再赘述。
其中，在图36所示第二NM卡5中，当第二金手指522相邻的第四金手指524悬空设置时，由于第四金手指524不进行信号传输，因此第四金手指524不会因与第二金手指522短路，而导致第二NM卡5电路被烧毁，提高了第二NM卡5的可靠性，并且第二NM卡5的第四金手指524无需设置电连接耐高压电路或保护开关，第二NM卡5的成本较低。在其他一些实施例中，也可以第一金手指521悬空设置，第四金手指524用于传输时钟信号(例如CLK-)。
图37所示电子设备100与图34所示电子设备100的主要区别在于，第二存储卡控制器2022的第二电源接口(VDD2)电连接卡连接器11的第一弹片11a，其中一个时钟接口(例如CLK-)电连接卡连接器11的第二弹片11b。图37所示电子设备100的其他方案内容可以参考图34所示电子设备100的相关描述，此处不再赘述。
图38所示电子设备100与图35所示电子设备100的主要区别在于，第二存储卡控制器 2022的第二电源接口(VDD2)电连接卡连接器11的第一弹片11a，其中一个时钟接口(例如CLK-)电连接卡连接器11的第二弹片11b。图38所示电子设备100的其他方案内容可以参考图35所示电子设备100的相关描述，此处不再赘述。
以下对采用的PCIe接口协议的第二NM卡5的第三种信号排布方式进行举例说明。
请参阅图39，图39是图17所示第二NM卡5在另一些实施例中的示意图。
示例性的，第二NM卡5的第二金手指522、第六金手指526、第九金手指529及第十金手指5210用于传输数据信号。以下实施例以第二金手指522用于传输数据信号(RX-)、第六金手指526用于传输数据信号(RX+)、第九金手指529用于传输数据信号(TX+)、第十金手指5210用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第二金手指522、第六金手指526、第九金手指529及第十金手指5210传输的数据信号能够互相调换。例如，第二金手指522与第六金手指526传输的数据信号互相调换，第九金手指529与第十金手指5210传输的数据信号互相调换，其他实施例此处不再赘述。
其中，第四金手指524和第五金手指525用于传输时钟信号。以下实施例以第四金手指524用于传输时钟信号(CLK-)、第五金手指525用于传输时钟信号(CLK+)，为例进行说明。在其他一些实施例中，第四金手指524和第五金手指525传输的时钟信号能够互相调换。
其中，第一金手指521用于传输第二电源信号(VDD2)；第七金手指527用于传输地信号(VSS)；第八金手指528用于传输第一电源信号(VDD1)。其中，第三金手指523悬空设置。
如下表7所示，表7为卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡5的多个金手指及其传输信号的对应关系表五。第二NM卡5与卡连接器11连接时，卡连接器11的第一弹片11a至第十弹片11j一一对应地抵持且电连接第二NM卡5的第一金手指521至第十金手指5210，第二NM卡5的第三金手指523至第八金手指528一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡5的第三金手指523至第十金手指5210一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表7
Figure PCTCN2022137987-appb-000009
Figure PCTCN2022137987-appb-000010
在本实施例中，第二NM卡5将PCIe协议所需的第二电源信号(VDD2)排布于第一金手指521，由于第二NM卡5的第一金手指521与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，第二NM卡5的第一金手指521无需与Nano SIM卡3和第一NM卡4复用卡连接器11的同一个弹片，避免第二电源信号(VDD2)与Nano SIM卡3和第一NM卡4的数据信号共用同一个弹片，以降低Nano SIM卡3和第一NM卡4插入电子设备100、连接卡连接器11时，被第二电源信号(VDD2)烧坏的风险，电子设备100兼容Nano SIM卡3和第一NM卡4以及第二NM卡5的可靠性较高。此外，第一NM卡4和Nano SIM卡3也无需部署用于避免电路被第二电源信号(VDD2)烧坏的耐高压设计，能够降低成本。
第二NM卡5将其中一个高速的数据信号(例如RX-)排布于第二金手指522，由于第二NM卡5的第二金手指522与Nano SIM卡3和第一NM卡4的所有金手指均无位置对应关系，因此第二弹片11b连接电子设备100的处理器20的高速数据接口、无需连接低速数据接口，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第二弹片11b电连接的接口，从而可以降低高速数据接口和低速数据接口切换的难度，简化处理器20的电路，降低设计难度和成本。
此外，由于第二NM卡5的第七金手指527与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器11的第七弹片11g抵持并电连接，第二NM卡5的第七金手指527、Nano SIM卡3的第五金手指325以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因此电子设备100的处理器20可以通过同一个地接口电连接卡连接器11的第七弹片11g，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第七弹片11g电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第八金手指528与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器11的第八弹片11h抵持并电连接，第二NM卡5的第八金手指528、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VDD1/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器11的第八弹片11h，无论电子设备100中插入的信息卡是第二NM卡5、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第八弹片11h电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡5的第四金手指524与Nano SIM卡3的第二金手指322位置对应、与第一NM卡4的第二金手指422的位置对应，插入电子设备100时均与卡连接器11的第四弹片11d抵持并电连接，第二NM卡5的第四金手指524用于传输时钟信号(例如CLK-)，Nano SIM卡3的第二金手指322用于传输时钟信号(CLK)，第一NM卡4的第二金手指422用于传输时钟信号(CLK)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第四弹片11d。 处理器20可通过第四弹片11d提供不同频率的时钟信号，无需切换数据接口信号，从而简化处理器20的电路，降低设计复杂度和成本。在一些场景下，当第一NM卡4、第二NM卡5、Nano SIM卡3如能有相同频率的时钟信号时，处理器20则可为三种卡提供相同的时钟信号，不再需要切换，更为简化处理器20设计难度，例如，统一为20MHz的时钟频率。
第二NM卡5的第五金手指525与Nano SIM卡3的第三金手指323位置对应、与第一NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器11的第五弹片11e抵持并电连接，第二NM卡5的第五金手指525用于传输另一个时钟信号(例如CLK+)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第一金手指421用于传输命令和响应信号(CMD)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第五弹片11e。
第二NM卡5的第六金手指526与Nano SIM卡3的第四金手指324位置对应、与第一NM卡4的第四金手指424的位置对应，插入电子设备100时均与卡连接器11的第六弹片11f抵持并电连接，第二NM卡5的第六金手指526用于传输另一个数据信号(例如RX+)，Nano SIM卡3的第四金手指324用于传输复位信号(RST)，第一NM卡4的第四金手指424用于传输数据信号(例如DATA0)，第二NM卡5、Nano SIM卡3及第一NM卡4可以分时复用第六弹片11f。
第二NM卡5的第九金手指529与第一NM卡4的第七金手指427位置对应，插入电子设备100时均与卡连接器11的第九弹片11i抵持并电连接，第二NM卡5的第九金手指529用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡5和第一NM卡4可以分时复用第九弹片11i。
第二NM卡5的第十金手指5210与第一NM卡4的第八金手指428位置对应，插入电子设备100时均与卡连接器11的第十弹片11j抵持并电连接，第二NM卡5的第十金手指5210用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡5和第一NM卡4可以分时复用第十弹片11j。
当电子设备100兼容Nano SIM卡3和第二NM卡5、不兼容第一NM卡4时，卡连接器11的第九弹片11i和第十弹片11j也可以为第二NM卡5的独有弹片，第九弹片11i和第十弹片11j均连接高速数据接口，无论电子设备100中插入的信息卡是第二NM卡5还是Nano SIM卡3，处理器20均无需切换与第九弹片11i和第十弹片11j电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
其中，由于与第一金手指521相邻的第三金手指523可以悬空设置，不进行信号传输，因此第三金手指523不会因与第一金手指521短路，而导致第二NM卡5电路被烧毁，提高了第二NM卡5的可靠性，并且第二NM卡5的第三金手指523无需设置电连接耐高压电路或保护开关，第二NM卡5的成本较低。
示例性的，第十金手指5210可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。在其他一些实施例中，第三金手指523也可以用于传输检测信号(C/D)。此时，第三金手指523也可以电连接耐高压电路或保护开关，用于避免第二NM卡5的卡接口52短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡5的封装件511内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
在其他一些实施例中，第二NM卡5的第三金手指523也可以用于传输时钟信号(例如CLK-)，第四金手指524悬空设置或者用于传输检测信号(C/D)。此时，第三金手指523可 以电连接耐高压电路或保护开关，以避免第三金手指523由于弹片短路，而导致第二NM卡5电路被烧毁，提高了第二NM卡5的可靠性。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡5的电路，例如在电子设备的接口控制器内增加保护电路实现。
请参阅图40，图40是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡5，第二NM卡5的卡接口52信号排布如图39所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。图40中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022包括四个数据接口、两个时钟接口以及第二电源接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，两个时钟接口用于传输时钟信号(CLK+、CLK-)，第二电源接口用于传输第二电源信号(VDD2)。图40中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VDD1)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图40中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012以及第三开关2013。
第一开关2011连接第二存储卡控制器2022的一个时钟接口(例如CLK-)和SIM卡控制器203的时钟接口(CLK)，第一开关2011还连接卡连接器11的第四弹片11d，第一开关2011用于导通第四弹片11d与第二存储卡控制器2022的时钟接口(例如CLK-)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)。
第二开关2012连接第二存储卡控制器2022的另一个时钟接口(例如CLK+)和SIM卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的时钟接口(例如CLK+)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第三开关2013连接第二存储卡控制器2022的一个数据接口(例如RX+)和SIM卡控制器203的复位接口(RST)，第三开关2013还连接卡连接器11的第六弹片11f，第三开关2013用于导通第六弹片11f与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第六弹 片11f与SIM卡控制器203的复位接口(RST)。
第二存储卡控制器2022的第二电源接口(VDD2)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的另一个数据接口(例如RX-)通过接口控制器201电连接卡连接器11的第二弹片11b。第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器11的第九弹片11i。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器11的第十弹片11j。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。SIM卡控制器203的数据接口(DATA)通过接口控制器201电连接卡连接器11的第三弹片11c。
其中，在第二存储卡控制器2022的第二电源接口(VDD2)与第一弹片11a之间、第二存储卡控制器2022的时钟接口(例如CLK-)与第二弹片11b之间、SIM卡控制器203的数据接口(DATA)与第三弹片11c之间、第二存储卡控制器2022的数据接口(例如TX+)与第九弹片11i之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片11j之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a、第二弹片11b、第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、时钟信号(CLK+、CLK-)、以及第二电源信号(VDD2)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VDD1)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
可以理解的是，当第二NM卡5的第三金手指523用于传输检测信号(C/D)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第三弹片11c。
在其他一些实施例中，当第二NM卡5的第三金手指523用于传输时钟信号(例如CLK-)，第四金手指524悬空设置时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的时钟接口(例如CLK-)与第三弹片11c。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，接口控制器201可以不包括第二开关2012，第二存储卡控制器2022的另一个时钟接口(例如CLK+)通过接口控制器201电连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
请参阅图41，图41是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡5，第二NM卡5的卡接口52信号排布如图39所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第一弹片11a至第十弹片11j。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图40对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图41中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器11，或者导通第一存储卡控制器2021与卡连接器11，或者导通第二存储卡控制器2022与卡连接器11。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第一存储卡控制器2021的时钟接口(CLK)、SIM卡控制器203的时钟接口(CLK)以及第二存储卡控制器2022的其中一个时钟接口(例如CLK-)，第四开关2014还连接卡连接器11的第四弹片11d，第四开关2014用于导通第三弹片11c与第一存储卡控制器2021的时钟接口(CLK)，或者导通第四弹片11d与SIM卡控制器203的时钟接口(CLK)，或者导通第四弹片11d与第二存储卡控制器2022的时钟接口(例如CLK-)。
第二开关2012连接第二存储卡控制器2022的另一个时钟接口(CLK+)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第二开关2012还连接卡连接器11的第五弹片11e，第二开关2012用于导通第五弹片11e与第二存储卡控制器2022的时钟接口(CLK+)，或者导通第五弹片11e与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第五弹片11e与SIM卡控制器203的编程电压/输入接口(VPP)。
第三开关2013连接第二存储卡控制器2022的一个数据接口(例如RX+)、第一存储卡控制器2021的另一个数据接口(例如DATA0)和SIM卡控制器203的复位接口(RST)，第三开关2013还连接卡连接器11的第六弹片11f，第三开关2013用于导通第六弹片11f与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第六弹片11f与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第六弹片11f与SIM卡控制器203的复位接口(RST)。
第四开关2014连接第一存储卡控制器2021的一个数据接口(例如DATA1)和SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器11的第三弹片11c，第一开关2011用于导通第三弹片11c与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第三弹片11c与SIM卡控制器203的数据接口(DATA)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储 卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器11的第九弹片11i，第五开关2015用于导通第九弹片11i与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第九弹片11i与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器11的第十弹片11j，第六开关2016用于导通第十弹片11j与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第十弹片11j与第一存储卡控制器2021的数据接口(例如DATA2)。
第二存储卡控制器2022的第二电源接口(VDD2)通过接口控制器201电连接卡连接器11的第一弹片11a。第二存储卡控制器2022的另一个数据接口(例如RX-)通过接口控制器201电连接卡连接器11的第二弹片11b。处理器20的电源接口通过接口控制器201电连接卡连接器11的第八弹片11h。处理器20的地接口通过接口控制器201电连接卡连接器11的第七弹片11g。其中，在第二存储卡控制器2022的第二电源接口(VDD2)与第一弹片11a之间、第二存储卡控制器2022的数据接口(例如RX-)与第二弹片11b之间、处理器20的电源接口与第八弹片11h之间以及地接口与第七弹片11g之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器11时，接口控制器201导通SIM卡控制器203与卡连接器11，SIM卡控制器203经卡连接器11的第三弹片11c至第六弹片11f，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器11时，接口控制器201导通第一存储卡控制器2021与卡连接器11，第一存储卡控制器2021经卡连接器11的第三弹片11c至第六弹片11f、第九弹片11i以及第十弹片11j，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡5插入电子设备100的卡座组件10，第二NM卡5电连接卡连接器11时，接口控制器201导通第二存储卡控制器2022与卡连接器11，第二存储卡控制器2022经卡连接器11的第一弹片11a至第三弹片11c、第五弹片11e和第六弹片11f、第九弹片11i以及第十弹片11j，与第二NM卡5之间进行数据信号(RX+、RX-、TX+、TX-)、时钟信号(CLK+、CLK-)、以及第二电源信号(VDD2)的传输，电子设备100的处理器20通过卡连接器11的第八弹片11h和第七弹片11g，与第二NM卡5之间进行第一电源信号(VDD1)和地信号(VSS)的传输，第二NM卡5与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡5。
可以理解的是，当第二NM卡5的第三金手指523用于传输检测信号(C/D)时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的检测接口(C/D)与第三弹片11c。
在其他一些实施例中，当第二NM卡5的第三金手指523用于传输时钟信号(例如CLK-)， 第四金手指524悬空设置时，接口控制器201做适应性调整，接口控制器201还用于在第二NM卡5插入电子设备100时，导通第二存储卡控制器2022的时钟接口(例如CLK-)与第三弹片11c。
在另一些实施例中，编程电压/输入信号(VPP)可不支持，以降低处理器20设计难度。此时，SIM卡控制器203可以不包括编程电压/输入接口(VPP)，第二开关2012连接第二存储卡控制器2022的其中一个时钟接口(CLK+)和第一存储卡控制器2021的命令和响应复用接口(CMD)，第二开关2012还连接卡连接器11的第五弹片11e，其他方案内容参阅以上实施例，此处不再赘述。
以下对采用的PCIe接口协议的第二NM卡5的第四种信号排布方式进行举例说明。
请结合参阅图42至图44，图42是图17所示第二NM卡5在另一些实施例中的示意图，图43是图1所示电子设备100在另一些实施例中的部分电路的示意图，图44是图1所示电子设备100在另一些实施例中的部分电路的示意图。
图42所示第二NM卡5与图39所示第二NM卡5的主要区别在于，第二NM卡5的第一金手指521用于传输数据信号(例如RX-)，第二金手指522用于传输第二电源信号(VDD2)。也即，图42所示第二NM卡5与图39所示第二NM卡5的第一金手指521和第二金手指522传输的信号互相调换。其中，第一金手指521、第六金手指526、第九金手指529及第十金手指5210传输的数据信号能够互相调换。图42所示第二NM卡5的其他方案内容可以参考图39所示第二NM卡5的相关描述，此处不再赘述。
图43所示电子设备100与图40所示电子设备100的主要区别在于，其中一个数据接口(例如RX-)电连接卡连接器11的第一弹片11a，第二存储卡控制器2022的第二电源接口(VDD2)电连接卡连接器11的第二弹片11b。图43所示电子设备100的其他方案内容可以参考图40所示电子设备100的相关描述，此处不再赘述。
图44所示电子设备100与图41所示电子设备100的主要区别在于，其中一个数据接口(例如RX-)电连接卡连接器11的第一弹片11a，第二存储卡控制器2022的第二电源接口(VDD2)电连接卡连接器11的第二弹片11b。图44所示电子设备100的其他方案内容可以参考图41所示电子设备100的相关描述，此处不再赘述。
在其他一些实施例中，第二NM卡5也可以采用SD接口协议。采用SD接口协议的第二NM卡5与采用PCIe接口协议的第二NM卡5的区别在于，第二NM卡5传输的数据信号为D0+、D0-、D1+、D1-。采用SD接口协议的第二NM卡5的其他方案内容参考采用PCIe接口协议的第二NM卡5的相关描述，此处不再赘述。此外，能够兼容采用PCIe接口协议的第二NM卡5的电子设备100，亦能够支撑采用SD接口协议的第二NM卡5，其第二存储卡控制器2022的数据接口做适应性变化。
本申请还提供一种包括至少八个金手指的第二NM卡，第二NM卡可以采用UFS协议。UFS协议的相关描述可以参考前文实施例，此处不再赘述。第二NM卡的卡接口可以与第一NM卡4的卡接口42结构相同或相似，第二NM卡可以与能够插接第一NM卡4的卡连接器(例如图5所示卡连接器11)连接。以下进行举例说明。
请参阅图45，图45是本申请实施例提供的第二NM卡在另一实施例中的结构示意图。
本实施例第二NM卡6可以包括图17及其他附图所示第二NM卡5的大部分技术特征，以下主要说明两者的区别：
一些实施例中，第二NM卡6的卡体61包括第一边6111、第二边6112、第三边6113以及第四边6114，第一边6111和第三边6113相对设置并沿第二NM卡6的长度方向延伸，第 二边6112和第四边6114相对设置并沿第二NM卡6的宽度方向延伸。其中，第二边6112与第四边6114的间距大于第一边6111与第三边6113的间距。换言之，第一边6111和第三边6113为长边，第二边6112和第四边6114为短边。其中，第一边6111和第三边6113可以平行或近似平行设置，第二边6112和第四边6114可以平行或近似平行设置。
其中，第二NM卡6的卡体61的一个角为切角，切角设置于第一边6111与第二边6112之间。该切角形成切边6115，切边6115与第一边6111之间形成钝角，且与第二边6112之间形成钝角。其中，卡体61的相邻边(包括第一边6111、第二边6112、第三边6113、第四边6114以及切边6115)之间可以设置圆弧过渡结构或倒角过渡结构。在其他一些实施例中，第二NM卡6的卡体61也可以不设置上述切角，本申请对此不作严格限定。
示例性的，第二NM卡6的卡接口62包括至少八个金手指，例如包括第一金手指621至第八金手指628，第一金手指621至第八金手指628呈阵列排布，第一金手指621至第八金手指628沿第二NM卡6的长度方向排布成第一列金手指和第二列金手指，第一列金手指包括沿第二NM卡6的宽度方向排布的第一金手指621、第三金手指623、第五金手指625及第七金手指627，第二列金手指包括沿第二NM卡6的宽度方向排布的第二金手指622、第四金手指624、第六金手指626及第八金手指628。第一列金手指(621、623、625、627)的四个金手指与第二列金手指(622、624、626、628)的四个金手指一一对应、两两成排设置，也即排布成第一排金手指(621、622)、第二排金手指(623、624)、第三排金手指(625、626)、以及第四排金手指(627、628)。也即，第一金手指621至第八金手指628排布成两列四排。
其中，第一列金手指(621、623、625、627)位于第二边6112与第二列金手指(622、624、626、628)之间，也即，第一列金手指(621、623、625、627)靠近第二边6112排布，第二列金手指(622、624、626、628)靠近第四边6114排布。
其中，第一金手指621位于第一边6111与第三金手指623之间，第二金手指622位于第一边6111与第四金手指614之间。也即，第一排金手指(621、622)靠近第一边6111排布，第四排金手指(627、628)靠近第三边6113排布。此时，第一金手指621相较于其他金手指更靠近卡体61的切边6115。
其中，第一排金手指(621、622)与第二排金手指(623、624)的中心间距大于第三排金手指(625、626)与第四排金手指(627、628)的中心间距，第二排金手指(623、624)与第三排金手指(625、626)的中心间距大于第三排金手指(625、626)与第四排金手指(627、628)的中心间距。
例如，第一排金手指(621、622)与第二排金手指(623、624)的中心间距及第二排金手指(623、624)与第三排金手指(625、626)可以在1.5mm至2.8mm的范围内，第三排金手指(625、626)与第四排金手指(627、628)的中心间距可以在1.0mm至1.7mm的范围内。第二NM卡6的卡体61的尺寸可以与Nano SIM卡3的卡体31的尺寸相同。
第二NM卡6的第一金手指621至第八金手指628中，四个金手指用于传输数据信号(RX+、RX-、TX+、TX-)，一个金手指用于传输参考时钟信号(RCLK)，一个金手指用于传输第一电源信号(VCC)、一个金手指用于传输地信号(VSS)、一个金手指用于传输第二电源信号(VCCQ)。此时，第二NM卡6能够支撑UFS协议，实现高速卡的基本性能。本实施例第二NM卡6的其他方案内容可以参考图17及其他附图所示第二NM卡5的相关描述，此处不再赘述。
在本实施例中，由于第二NM卡6的金手指排布结构与第一NM卡4的金手指排布结构相同或相似，因此第二NM卡6能够与兼容第一NM卡4的卡连接器实现结构连接和电连接， 从而能够减少电子设备100的电路线路的布线改动，降低改动难度和成本。
示例性的，第二NM卡6的第一金手指621、第四金手指624、第七金手指627及第八金手指628用于传输数据信号(RX+、RX-、TX+、TX-)。以下实施例以第一金手指621用于传输数据信号(RX-)、第四金手指624用于传输数据信号(RX+)、第七金手指627用于传输数据信号(TX+)、第八金手指628用于传输数据信号(TX-)，为例进行说明。在其他一些实施例中，第一金手指621、第四金手指624、第七金手指627及第八金手指628传输的数据信号能够互相调换。例如，第一金手指621与第四金手指624传输的数据信号互相调换，第七金手指627与第八金手指628传输的数据信号互相调换，其他实施例此处不再赘述。其中，第二金手指622用于传输参考时钟信号(RCLK)；第三金手指623用于传输第二电源信号(VCCQ)；第五金手指625用于传输地信号(VSS)；第六金手指626用于传输第一电源信号(VCC)。
一些实施例中，请参阅表8，表8为另一种卡连接器的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡6的多个金手指及其传输信号的对应关系表一。当第二NM卡6连接兼容第一NM卡4的、具有八个弹片的卡连接器时，卡连接器的八个弹片一一对应地抵持且电连接第二NM卡6的第一金手指621至第八金手指628，第二NM卡6的第一金手指621至第六金手指626一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。其中，上述具有八个弹片的卡连接器的第一弹片至第八弹片，可以一一对应地与图5所示卡连接器的第三弹片至第十弹片位置对应。一些实施例中，第二NM卡6的第一金手指621至第八金手指628一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表8
Figure PCTCN2022137987-appb-000011
在本实施例中，第二NM卡6的第五金手指625与Nano SIM卡3的第五金手指325位置对应、与第一NM卡4的第五金手指425的位置对应，插入电子设备100时均与卡连接器的第七弹片抵持并电连接，第二NM卡6的第五金手指625、Nano SIM卡3的第五金手指325 以及第一NM卡4的第五金手指425均用于传输地信号(分别为VSS/GND/GND)，因此电子设备100的处理器20可以通过同一个地接口电连接卡连接器的第五弹片，无论电子设备100中插入的信息卡是第二NM卡6、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第五弹片电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡6的第六金手指626与Nano SIM卡3的第六金手指326位置对应、与第一NM卡4的第六金手指426的位置对应，插入电子设备100时均与卡连接器的第六弹片抵持并电连接，第二NM卡6的第六金手指626、Nano SIM卡3的第六金手指326以及第一NM卡4的第六金手指426均用于传输电源信号(分别为VCC/VCC/VCC)，因此电子设备100的处理器20可以通过同一个电源接口电连接卡连接器的第六弹片，无论电子设备100中插入的信息卡是第二NM卡6、Nano SIM卡3还是第一NM卡4，处理器20均无需切换与第六弹片电连接的接口，从而可以简化处理器20的电路，降低设计难度和成本。
第二NM卡6的第一金手指621与Nano SIM卡3的第一金手指321位置对应、与第一NM卡4的第一金手指421的位置对应，插入电子设备100时均与卡连接器的第一弹片抵持并电连接，第二NM卡6的第一金手指621用于传输数据信号(例如RX-)，Nano SIM卡3的第一金手指321用于数据信号(DATA)，第一NM卡4的第一金手指421用于传输数据信号(例如DATA1)，第二NM卡6、Nano SIM卡3及第一NM卡4可以分时复用第一弹片。
第二NM卡6的第二金手指622与Nano SIM卡3的第二金手指322位置对应、与第一NM卡4的第二金手指422的位置对应，插入电子设备100时均与卡连接器的第二弹片抵持并电连接，第二NM卡6的第二金手指622用于传输参考时钟信号(RCLK)，Nano SIM卡3的第二金手指322用于传输时钟信号(CLK)，第一NM卡4的第二金手指422用于传输时钟信号(CLK)，第二NM卡6、Nano SIM卡3及第一NM卡4可以分时复用第二弹片。
第二NM卡6的第三金手指623与Nano SIM卡3的第三金手指323位置对应、与第一NM卡4的第三金手指423的位置对应，插入电子设备100时均与卡连接器的第三弹片抵持并电连接，第二NM卡6的第三金手指623用于传输第二电源信号(VCCQ)，Nano SIM卡3的第三金手指323用于传输编程电压/输入信号(VPP)，第一NM卡4的第一金手指421用于传输命令和响应信号(CMD)，第二NM卡6、Nano SIM卡3及第一NM卡4可以分时复用第三弹片。
第二NM卡6的第七金手指627与第一NM卡4的第七金手指427位置对应，插入电子设备100时均与卡连接器的第七弹片抵持并电连接，第二NM卡6的第七金手指627用于传输数据信号(例如TX+)，第一NM卡4的第七金手指427用于传输数据信号(例如DATA3)，第二NM卡6和第一NM卡4可以分时复用第七弹片。
第二NM卡6的第八金手指628与第一NM卡4的第八金手指428位置对应，插入电子设备100时均与卡连接器的第八弹片抵持并电连接，第二NM卡6的第八金手指628用于传输数据信号(例如TX-)，第一NM卡4的第八金手指428用于传输数据信号(例如DATA2)，第二NM卡6和第一NM卡4可以分时复用第八弹片。
示例性的，第二NM卡6的第八金手指628可以电连接耐高压电路或保护开关，用于避免第二NM卡6的卡接口62短路时烧坏电路。其中，耐高压电路或保护开关均位于第二NM卡6的封装件611内。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏第二NM卡6的电路，例如在电子设备的接口控制器内增加保护电路实现。
可以理解的是，由于第二NM卡6的第三金手指623与Nano SIM卡3的第三金手指323、第一NM卡4的第三金手指423分时复用第三弹片，第三弹片在一些使用场景中传输第二NM 卡6的第二电源信号(VCCQ)，因此可以在Nano SIM卡3的第三金手指323、第一NM卡4的第三金手指423上电连接耐高压电路或保护开关，用于避免烧坏电路，以提高Nano SIM卡3和第一NM卡4的可靠性。在其他一些实施例中，也可通过在电子设备内提供高阻抗保护电路，避免烧坏Nano SIM卡3的电路，例如在电子设备的接口控制器内增加保护电路实现。
请参阅图46，图46是本申请实施例提供的电子设备100在一些实施例中的部分电路的示意图。一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡6，第二NM卡6的卡接口62信号排布如图45所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器的第一弹片至第八弹片。
其中，SIM卡控制器203包括数据接口、时钟接口、编程电压/输入接口以及复位接口，数据接口用于传输数据信号(DATA)，时钟接口用于传输时钟信号(CLK)，编程电压/输入接口用于传输编程电压/输入信号(VPP)，复位接口用于传输复位信号(RST)。图46中以及后续附图和实施例内容的相关描述中，SIM卡控制器203的多个接口以其传输的信号进行标识示意。
第二存储卡控制器2022包括四个数据接口、参考时钟接口以及第二电源接口，四个数据接口用于传输数据信号(RX+、RX-、TX+、TX-)，参考时钟接口用于传输参考时钟信号(RCLK)，第二电源接口用于传输第二电源信号(VCCQ)。图46中以及后续附图和实施例内容的相关描述中，第二存储卡控制器2022的多个接口以其传输的信号进行标识示意。在其他一些实施例中，第二电源接口也可以独立在第二存储卡控制器2022之外，本申请实施例对此不作严格限定。
其中，处理器20还包括电源接口和地接口，电源接口用于传输电源信号(VCC)或第一电源信号(VCC)，地接口用于传输地信号(GND)或地信号(VSS)。其中，电源接口和地接口可以独立在SIM卡控制器203和第二存储卡控制器2022之外，也可以各自拆分后、集成在SIM卡控制器203和第二存储卡控制器2022中，本申请实施例对此不作严格限定。图46中以及后续附图中，以电源接口和地接口相对SIM卡控制器203和第二存储卡控制器2022独立为例进行示意，并分别标识为电源和地。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器，或者导通第二存储卡控制器2022与卡连接器。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013以及第四开关2014。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)和SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器的第一弹片，第一开关2011用于导通第一弹片与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第一弹片与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)和SIM卡控制器203的时钟接口(CLK)，第二开关2012还连接卡连接器的第二弹片，第二开关2012用于导通第二弹片与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第二弹片与SIM卡控制器203的时钟接口(CLK)。
第三开关2013连接第二存储卡控制器2022的第二电源接口(VCCQ)和SIM卡控制器203的编程电压/输入接口(VPP)，第三开关2013还连接卡连接器的第三弹片，第三开关2013 用于导通第三弹片与第二存储卡控制器2022的第二电源接口(VCCQ)，或者导通第三弹片与SIM卡控制器203的编程电压/输入接口(VPP)。
第四开关2014连接第二存储卡控制器2022的另一个数据接口(例如RX+)和SIM卡控制器203的复位接口(RST)，第四开关2014还连接卡连接器的第四弹片，第四开关2014用于导通第四弹片与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第四弹片与SIM卡控制器203的复位接口(RST)。
第二存储卡控制器2022的另一个数据接口(例如TX+)通过接口控制器201电连接卡连接器的第九弹片。第二存储卡控制器2022的另一个数据接口(例如TX-)通过接口控制器201电连接卡连接器的第十弹片。处理器20的电源接口通过接口控制器201电连接卡连接器的第八弹片。处理器20的地接口通过接口控制器201电连接卡连接器的第七弹片。其中，在第二存储卡控制器2022的数据接口(例如TX+)与第九弹片之间、第二存储卡控制器2022的数据接口(例如TX-)与第十弹片之间、处理器20的电源接口与第八弹片之间以及地接口与第七弹片之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连接卡连接器时，接口控制器201导通SIM卡控制器203与卡连接器，SIM卡控制器203经卡连接器的第一弹片至第四弹片，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器的第六弹片和第五弹片，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第二NM卡6插入电子设备100的卡座组件10，第二NM卡6电连接卡连接器时，接口控制器201导通第二存储卡控制器2022与卡连接器，第二存储卡控制器2022经卡连接器的第一弹片至第四弹片、第七弹片以及第八弹片，与第二NM卡6之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器的第六弹片和第五弹片，与第二NM卡6之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡6与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡6。
请参阅图47，图47是本申请实施例提供的电子设备100在一些实施例中的部分电路的示意图。
一些实施例中，电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡6，第二NM卡6的卡接口62信号排布如图45所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器的第一弹片至第八弹片。
其中，SIM卡控制器203和第二存储卡控制器2022可以参阅图46对应实施例的相关描述，此处不再赘述。第一存储卡控制器2021包括四个数据接口、时钟接口以及命令和响应复用接口。四个数据接口用于传输数据信号(DATA0、DATA1、DATA2、DATA3)，时钟接口用于传输时钟信号(CLK)，命令和响应复用接口用于传输命令和响应信号(CMD)。图47中以及后续附图和实施例内容的相关描述中，第一存储卡控制器2021的多个接口以其传输的信号进行标识示意。其中，当电源接口和地接口拆分后，也可以集成在第一存储卡控制器2021 中。
示例性的，接口控制器201用于导通SIM卡控制器203与卡连接器，或者导通第一存储卡控制器2021与卡连接器，或者导通第二存储卡控制器2022与卡连接器。接口控制器201可以包括多个开关和导线。
一些实施例中，接口控制器201包括第一开关2011、第二开关2012、第三开关2013、第四开关2014、第五开关2015以及第六开关2016。
第一开关2011连接第二存储卡控制器2022的一个数据接口(例如RX-)、第一存储卡控制器2021的一个数据接口(例如DATA1)以及SIM卡控制器203的数据接口(DATA)，第一开关2011还连接卡连接器的第一弹片，第一开关2011用于导通第一弹片与第二存储卡控制器2022的数据接口(例如RX-)，或者导通第一弹片与第一存储卡控制器2021的数据接口(例如DATA1)，或者导通第一弹片与SIM卡控制器203的数据接口(DATA)。
第二开关2012连接第二存储卡控制器2022的参考时钟接口(RCLK)、第一存储卡控制器2021的时钟接口(CLK)以及SIM卡控制器203的时钟接口(CLK)，第二开关2012还连接卡连接器的第二弹片，第二开关2012用于导通第二弹片与第二存储卡控制器2022的参考时钟接口(RCLK)，或者导通第二弹片与第一存储卡控制器2021的时钟接口(CLK)，或者导通第二弹片与SIM卡控制器203的时钟接口(CLK)。
第三开关2013连接第二存储卡控制器2022的第二电源接口(VCCQ)、第一存储卡控制器2021的命令和响应复用接口(CMD)以及SIM卡控制器203的编程电压/输入接口(VPP)，第三开关2013还连接卡连接器的第三弹片，第三开关2013用于导通第三弹片与第二存储卡控制器2022的第二电源接口(VCCQ)，或者导通第三弹片与第一存储卡控制器2021的命令和响应复用接口(CMD)，或者导通第三弹片与SIM卡控制器203的编程电压/输入接口(VPP)。
第四开关2014连接第二存储卡控制器2022的另一个数据接口(例如RX+)、第一存储卡控制器2021的另一个数据接口(例如DATA0)以及SIM卡控制器203的复位接口(RST)，第四开关2014还连接卡连接器的第四弹片，第四开关2014用于导通第四弹片与第二存储卡控制器2022的数据接口(例如RX+)，或者导通第四弹片与第一存储卡控制器2021的数据接口(例如DATA0)，或者导通第四弹片与SIM卡控制器203的复位接口(RST)。
第五开关2015连接第二存储卡控制器2022的另一个数据接口(例如TX+)和第一存储卡控制器2021的另一个数据接口(例如DATA3)，第五开关2015还连接卡连接器的第七弹片，第五开关2015用于导通第七弹片与第二存储卡控制器2022的数据接口(例如TX+)，或者导通第七弹片与第一存储卡控制器2021的数据接口(例如DATA3)。
第六开关2016连接第二存储卡控制器2022的另一个数据接口(例如TX-)和第一存储卡控制器2021的另一个数据接口(例如DATA2)，第六开关2016还连接卡连接器的第八弹片，第六开关2016用于导通第八弹片与第二存储卡控制器2022的数据接口(例如TX-)，或者导通第八弹片与第一存储卡控制器2021的数据接口(例如DATA2)。
处理器20的电源接口通过接口控制器201电连接卡连接器的第六弹片。处理器20的地接口通过接口控制器201电连接卡连接器的第五弹片。其中，处理器20的电源接口与第六弹片之间以及地接口与第五弹片之间，接口控制器201可以通过设置导线连接，以保持导通状态，接口控制器201也可以串接开关，通过开关实现导通状态与切断状态的切换，本申请实施例对此不作严格限定。
在本实施例中，当Nano SIM卡3插入电子设备100的卡座组件10，Nano SIM卡3电连 接卡连接器时，接口控制器201导通SIM卡控制器203与卡连接器，SIM卡控制器203经卡连接器的第一弹片至第四弹片，与Nano SIM卡3之间进行数据信号(DATA)、时钟信号(CLK)、传输编程电压/输入信号(VPP)以及复位信号(RST)的传输，电子设备100的处理器20通过卡连接器的第六弹片和第五弹片，与Nano SIM卡3之间进行电源信号(VCC)和地信号(GND)的传输，Nano SIM卡3与电子设备100实现通信。
当第一NM卡4插入电子设备100的卡座组件10，第一NM卡4电连接卡连接器时，接口控制器201导通第一存储卡控制器2021与卡连接器，第一存储卡控制器2021经卡连接器的第一弹片至第四弹片、第七弹片及第八弹片，与第一NM卡4之间进行数据信号(DATA0、DATA1、DATA2、DATA3)、时钟信号(CLK)以及命令和响应信号(CMD)的传输，电子设备100的处理器20通过卡连接器的第六弹片和第五弹片，与第一NM卡4之间进行电源信号(VCC)和地信号(GND)的传输，第一NM卡4与电子设备100实现通信。
当第二NM卡6插入电子设备100的卡座组件10，第二NM卡6电连接卡连接器时，接口控制器201导通第二存储卡控制器2022与卡连接器，第二存储卡控制器2022经卡连接器的第一弹片至第四弹片、第七弹片以及第八弹片，与第二NM卡6之间进行数据信号(RX+、RX-、TX+、TX-)、参考时钟信号(RCLK)以及第二电源信号(VCCQ)的传输，电子设备100的处理器20通过卡连接器的第六弹片和第五弹片，与第二NM卡6之间进行第一电源信号(VCC)和地信号(VSS)的传输，第二NM卡6与电子设备100实现通信。因此，电子设备100能够兼容Nano SIM卡3和第二NM卡6。
基于上述实施例的描述，在不冲突的情况下，在本申请的其他一些实施例中，第二NM卡的第一金手指、第二金手指以及第八金手指用作数据接口时，也可以电连接耐高压电路或保护开关，用于避免在卡连接器的第一弹片输出SIM卡控制器203的高压的数据信号、第二弹片输出SIM卡控制器203的高压的时钟信号、第六弹片输出高压的电源信号时，由于弹片短路，而烧坏电路，以提高第二NM卡的可靠性。其中，耐高压电路或保护开关均位于第二NM卡的封装件内。
请参阅图48，图48是图45所示第二NM卡6与图5所示卡连接器11的连接结构示意图。在其他一些实施例中，第二NM卡6也可以插接具有图5所示卡连接器11的电子设备100。当第二NM卡6连接图5所示卡连接器11时，卡连接器11的十个弹片均抵持第二NM卡6，其中，卡连接器11的第三弹片11c至第十弹片11j一一对应地抵持第二NM卡6的第一金手指621至第八金手指628，以电连接第二NM卡6。卡连接器11的第一弹片11a可以与第三弹片11c抵持且电连接第二NM卡的第一金手指621，第二弹片11b可以与第四弹片11d抵持且电连接第二NM卡6的第二金手指622；或者，第一排弹片(11a、11b)抵接第二NM卡6的卡体51。
请参阅表9，表9为图5所示卡连接器11的多个弹片与Nano SIM卡3、第一NM卡4以及第二NM卡6的多个金手指及其传输信号的对应关系表二。第二NM卡6与卡连接器11连接时，卡连接器11的第三弹片11c至第十弹片11j一一对应地抵持且电连接第二NM卡6的第一金手指621至第八金手指628，第二NM卡6的第一金手指621至第六金手指626一一对应地与Nano SIM卡3的第一金手指321至第六金手指326位置对应。一些实施例中，第二NM卡6的第一金手指621至第八金手指628一一对应地与第一NM卡4的第一金手指421至第八金手指428位置对应。
表9
Figure PCTCN2022137987-appb-000012
Figure PCTCN2022137987-appb-000013
请参阅图49，图49是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，所示电子设备100的卡座组件10能够兼容Nano SIM卡3和第二NM卡6，第二NM卡6的卡接口62信号排布如图45所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203以及第二存储卡控制器2022，SIM卡控制器203和第二存储卡控制器2022电连接接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第三弹片11c至第十弹片11j。
本实施例可以包括图46所示实施例的大部分技术特征。两者的主要区别在于，接口控制器201与卡连接器11的弹片的连接关系。例如，在本实施例中，第一开关2011至第四开关2014分别电连接卡连接器11的第三弹片11c至第六弹片11f，电源接口通过接口控制器201电连接卡连接器11的第八弹片11h，地接口通过接口控制器201电连接卡连接器11的第七弹片11g，第二存储卡控制器2022的两个数据接口(例如RX+、RX-)通过接口控制器201分别电连接第九弹片11i和第十弹片11j。其中，本实施例中SIM卡控制器203、第二存储卡控制器2022、电源接口、地接口以及接口控制器201的其他方案内容可以参考图46对应实施例的相关描述，此处不再赘述。
请参阅图50，图50是图1所示电子设备100在另一些实施例中的部分电路的示意图。
一些实施例中，所示电子设备100的卡座组件10能够兼容Nano SIM卡3、第一NM卡4以及第二NM卡6，第二NM卡6的卡接口62信号排布如图45所示。电子设备100的处理器20包括接口控制器201、SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022，SIM卡控制器203、第一存储卡控制器2021以及第二存储卡控制器2022电连接 接口控制器201，接口控制器201电连接卡座组件10的卡连接器11的第三弹片11c至第十弹片11j。
本实施例可以包括图47所示实施例的大部分技术特征。两者的主要区别在于，接口控制器201与卡连接器11的弹片的连接关系。例如，在本实施例中，第一开关2011至第四开关2014分别电连接卡连接器11的第三弹片11c至第六弹片11f，电源接口通过接口控制器201电连接卡连接器11的第八弹片11h，地接口通过接口控制器201电连接卡连接器11的第七弹片11g，第五开关2015和第六开关2016分别电连接第九弹片11i和第十弹片11j。其中，本实施例中SIM卡控制器203、第二存储卡控制器2022、电源接口、地接口以及接口控制器201的其他方案内容可以参考图47对应实施例的相关描述，此处不再赘述。
上述电子设备可以通过信息卡识别方法识别插入电子设备的信息卡的类型。
一些实施例中，信息卡识别方法能够识别信息卡是否为Nano SIM卡或第二NM卡，信息卡识别方法可以应用于能够兼容Nano SIM卡和第二NM卡的电子设备。
信息卡识别方法包括：
步骤001：执行第一初始化流程；
步骤002：若接收到第一回复指令，则判断插入的信息卡为第一卡；若未接收到第一回复指令，则判断插入的信息卡非第一卡，执行第二初始化流程；
步骤003：若接收到第二回复指令，则判断插入的信息卡为第二卡；若未接收到第二回复指令，则判断插入的信息卡非第二卡。
在本实施例中，电子设备通过执行信息卡的初始化流程，若接收到特定的回复信号，则能够判断信息卡是与初始化流程对应的信息卡，若未接收到特定的回复信号，则判断信息卡不是与初始化流程对应的信息卡，并执行下一个初始化流程，判断信息卡是否为与下一个初始化流程对应的信息卡。
一些实施例中，第一初始化流程可以为SIM卡初始化流程，第一卡为Nano SIM卡；第二初始化流程可以为第二NM卡初始化流程，第二卡为第二NM卡。或者，第一初始化流程可以为第二NM卡初始化流程，第一卡为第二NM卡；第二初始化流程可以为SIM卡初始化流程，第二卡为Nano SIM卡。
一些实施例中，SIM卡初始化流程可以包括：控制接口控制器导通SIM卡控制器与卡连接器。其中，卡连接器的第三弹片传输数据信号(DATA)，第四弹片传输时钟信号(CLK)，第五弹片传输编程电压/输入信号(VPP)，第六弹片传输复位信号(RST)，第七弹片传输地信号(GND)，第八弹片传输电源信号(VCC)。
一些实施例中，第二NM卡的初始化流程可以包括：控制接口控制器导通第二NM卡控制器与卡连接器。
示例性的，当信息卡识别方法应用于兼容图24所示第二NM卡的电子设备时，卡连接器的第一弹片、第三弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第二弹片传输第二电源信号(VCCQ)，第四弹片传输参考时钟信号(RCLK)，第五弹片传输检测信号(C/D)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VCC)。其中，第二NM卡控制器可以通过卡连接器的第五弹片发送检测信号(C/D)至信息卡，若接收到正确的信息卡返回的响应信号，则可以识别信息卡为第二NM卡。
示例性的，当信息卡识别方法应用于兼容图27所示第二NM卡的电子设备时，卡连接器的第一弹片、第五弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第二弹片传输第二电源信号(VCCQ)，第四弹片传输参考时钟信号(RCLK)，第七弹片传输 地信号(VSS)，第八弹片传输第一电源信号(VCC)。其中，当第二NM卡的第三金手指或第六金手指用于传输检测信号(C/D)时，卡连接器的对应的第三弹片或第六弹片用于传输检测信号(C/D)。
示例性的，当信息卡识别方法应用于兼容图30所示第二NM卡的电子设备时，卡连接器的第一弹片、第五弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第二弹片传输第二电源信号(VCCQ)，第六弹片传输参考时钟信号(RCLK)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VCC)。
示例性的，当信息卡识别方法应用于兼容图33所示第二NM卡的电子设备时，卡连接器的第三弹片、第六弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第一弹片传输第二电源信号(VDD2)，第二弹片和第五弹片传输时钟信号(CLK+、CLK-)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VDD1)。
示例性的，当信息卡识别方法应用于兼容图36所示第二NM卡的电子设备时，卡连接器的第三弹片、第六弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第一弹片和第五弹片传输时钟信号(CLK+、CLK-)，第二弹片传输第二电源信号(VDD2)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VDD1)。
示例性的，当信息卡识别方法应用于兼容图39所示第二NM卡的电子设备时，卡连接器的第二弹片、第六弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第一弹片传输第二电源信号(VDD2)，第四弹片和第五弹片传输时钟信号(CLK+、CLK-)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VDD1)。
示例性的，当信息卡识别方法应用于兼容图42所示第二NM卡的电子设备时，卡连接器的第一弹片、第六弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第二弹片传输第二电源信号(VDD2)，第四弹片和第五弹片传输时钟信号(CLK+、CLK-)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VDD1)。
示例性的，当信息卡识别方法应用于兼容图45所示第二NM卡的电子设备(例如图49和图50对应实施例)时，卡连接器的第三弹片、第六弹片、第九弹片以及第十弹片传输数据信号(RX+、RX-、TX+、TX-)，第五弹片传输第二电源信号(VCCQ)，第四弹片传输参考时钟信号(RCLK)，第七弹片传输地信号(VSS)，第八弹片传输第一电源信号(VCC)；当信息卡识别方法应用于兼容图45所示第二NM卡的电子设备(例如图46和图47对应实施例)时，卡连接器的第一弹片、第四弹片、第七弹片以及第八弹片传输数据信号(RX+、RX-、TX+、TX-)，第三弹片传输第二电源信号(VCCQ)，第二弹片传输参考时钟信号(RCLK)，第五弹片传输地信号(VSS)，第六弹片传输第一电源信号(VCC)。
一些实施例中，当信息卡识别方法应用于兼容图45所示第二NM卡的电子设备时，在第二NM卡的初始化流程中，控制卡连接器的第三弹片不传输第二电源信号(VCCQ)。例如，控制卡连接器的第三弹片可以不传输信号；或者，控制卡连接器的第三弹片传输识别信号，识别信号用于识别或者辅助识别信息卡是否为第二NM卡。其中，在判断信息卡为第二NM卡后，控制卡连接器的第三弹片传输第二电源信号(VCCQ)。
一些实施例中，当信息卡识别方法应用于兼容图45所示第二NM卡和Nano SIM卡的电子设备时，第一初始化流程可以为SIM卡初始化流程，第一卡为Nano SIM卡；第二初始化流程可以为第二NM卡初始化流程，第二卡为第二NM卡。
一些实施例中，信息卡识别方法响应于电子设备开机或电子设备重启。其中，第一初始化流程可以为SIM卡初始化流程。在本实施例中，当电子设备开机或电子设备重启时，信息 卡识别方法先进行SIM卡初始化流程，判断信息卡是否为Nano SIM卡，以先进入联网状态。当然，在其他一些实施例中，当信息卡识别方法响应于电子设备开机或电子设备重启时，信息卡识别方法也可以先执行非Nano SIM卡初始化流程，本申请实施例对此不作严格限定。
一些实施例中，信息卡识别方法响应于检测到卡托状态由脱离状态切换为插入状态，也即：在检测到卡托的状态由脱离状态切换为插入状态的情况下，执行第一初始化流程。其中，参阅图3，电子设备可以通过卡座组件中的插入检测弹片检测卡托状态为脱离状态还是插入状态。
另一些实施例中，信息卡识别方法能够识别信息卡是否为Nano SIM卡、第一NM卡或第二NM卡，信息卡识别方法可以应用于能够兼容Nano SIM卡、第一NM卡以及第二NM卡的电子设备。
信息卡识别方法包括：
步骤001：执行第一初始化流程；
步骤002：若接收到第一回复指令，则判断插入的信息卡为第一卡；若未接收到第一回复指令，则判断插入的信息卡非第一卡，执行第二初始化流程；
步骤003：若接收到第二回复指令，则判断插入的信息卡为第二卡；若未接收到第二回复指令，则判断插入的信息卡非第二卡，执行第三初始化流程；
步骤004：若接收到第三回复指令，则判断插入的信息卡为第三卡；若未接收到第三回复指令，则判断插入的信息卡非第三卡。
本实施例信息卡识别方法与前文实施例中信息卡识别方法的主要区别在于，在步骤003中，当判断插入的信息卡非第二卡时，信息卡识别方法接着执行第三初始化流程，以判断信息卡是否为第三卡。
一些实施例中，在第一初始化流程、第二初始化流程、第三初始化流程中，一者为SIM卡初始化流程，另一者为第一NM卡初始化流程，另一者为第二NM卡初始化流程。对应的，在第一卡、第二卡和第三卡中，一者为Nano SIM卡、另一者为第一NM卡、另一者为第二NM卡。
一些实施例中，SIM卡初始化流程和第二NM卡的初始化流程可以参考前文实施例中信息卡识别方法的相关描述。一些实施例中，第一NM卡的初始化流程可以包括：控制接口控制器导通第一NM卡控制器与卡连接器。其中，卡连接器的第三弹片、第六弹片、第九弹片以及第十弹片传输数据信号(DATA0、DATA1、DATA2、DATA3)，第四弹片传输时钟信号(CLK)，第五弹片传输命令和响应信号(CMD)，第七弹片传输地信号(GND)，第八弹片传输第一电源信号(VCC)。
一些实施例中，当信息卡识别方法应用于兼容图45所示第二NM卡、第一NM卡以及Nano SIM卡的电子设备时，第三初始化流程可以为第二NM卡初始化流程，第三卡为第二NM卡。其中，第一初始化流程可以为SIM卡初始化流程或第一NM卡初始化流程。
本实施例信息卡识别方法的其他内容可以参阅前文实施例中信息卡识别方法的相关描述，此处不再赘述。
以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的范围。

Claims (21)

  1. 一种存储卡(5)，其特征在于，包括卡体(51)和卡接口(52)，所述卡接口(52)固定于所述卡体(51)且露出于所述卡体(51)的一侧，所述存储卡(5)的卡体(51)的尺寸与Nano SIM卡(3)的卡体(31)的尺寸相同；
    所述存储卡(5)的卡体(51)包括第一边(5111)、第二边(5112)、第三边(5113)和第四边(5114)，所述第一边(5111)和所述第三边(5113)相对设置并沿所述存储卡(5)的长度方向延伸，所述第二边(5112)和所述第四边(5114)相对设置并沿所述存储卡(5)的宽度方向延伸，所述第二边(5112)与所述第四边(5114)的间距大于所述第一边(5111)与所述第三边(5113)的间距，所述存储卡(5)的卡体(51)的一个角为切角，所述切角设置于所述第一边(5111)与所述第二边(5112)之间；
    所述卡接口(52)包括呈阵列排布的十个金手指，十个所述金手指沿所述存储卡(5)的长度方向排布成第一列金手指和第二列金手指，所述第一列金手指位于所述第二边(5112)与所述第二列金手指之间，所述第一列金手指包括沿所述存储卡(5)的宽度方向依次排布的第一金手指(521)、第三金手指(523)、第五金手指(525)、第七金手指(527)及第九金手指(529)，所述第二列金手指包括沿所述存储卡(5)的宽度方向依次排布的第二金手指(522)、第四金手指(524)、第六金手指(526)、第八金手指(528)及第十金手指(5210)；
    所述第一金手指(521)位于所述第一边(5111)与所述第三金手指(523)之间，所述第二金手指(522)位于所述第一边(5111)与所述第四金手指(524)之间。
  2. 根据权利要求1所述的存储卡(5)，其特征在于，十个所述金手指沿所述存储卡(5)的宽度方向排布成第一排金手指(521、522)至第五排金手指(529、5210)；
    第二排金手指(523、524)与第三排金手指(525、526)的中心间距大于第一排金手指(521、522)与第二排金手指(523、524)的中心间距，且大于第四排金手指(527、528)与第五排金手指(529、5210)的中心间距；
    第三排金手指(525、526)与第四排金手指(527、528)的中心间距大于第一排金手指(521、522)与第二排金手指(523、524)的中心间距，且大于第四排金手指(527、528)与第五排金手指(529、5210)的中心间距。
  3. 根据权利要求2所述的存储卡(5)，其特征在于，所述第二排金手指(523、524)与所述第三排金手指(525、526)的中心间距在1.5mm至2.8mm的范围内，所述第三排金手指(525、526)与所述第四排金手指(527、528)的中心间距在1.5mm至2.8mm的范围内，所述第一排金手指(521、522)与所述第二排金手指(523、524)的中心间距在1.0mm至1.7mm的范围内，所述第四排金手指(527、528)与所述第五排金手指(529、5210)的中心间距在1.0mm至1.7mm的范围内。
  4. 根据权利要求1至3中任一项所述的存储卡(5)，其特征在于，
    所述第三金手指(523)与所述Nano SIM卡(3)的第一金手指(321)位置对应；
    所述第四金手指(524)与所述Nano SIM卡(3)的第二金手指(322)位置对应；
    所述第五金手指(525)与所述Nano SIM卡(3)的第三金手指(323)位置对应；
    所述第六金手指(526)与所述Nano SIM卡(3)的第四金手指(324)位置对应；
    所述第七金手指(527)与所述Nano SIM卡(3)的第五金手指(325)位置对应；
    所述第八金手指(528)与所述Nano SIM卡(3)的第六金手指(326)位置对应。
  5. 根据权利要求4所述的存储卡(5)，其特征在于，所述存储卡(5)和所述Nano SIM 卡(3)能够安装于同一个卡座组件(10)，所述卡座组件(10)的卡连接器(11)包括呈阵列排布的第一弹片(11a)至第十弹片(11j)；
    当所述存储卡(5)安装于所述卡座组件(10)时，所述第三金手指(523)电连接所述卡连接器(11)的第三弹片(11c)，所述第四金手指(524)电连接所述卡连接器(11)的第四弹片(11d)，所述第五金手指(525)电连接所述卡连接器(11)的第五弹片(11e)，所述第六金手指(526)电连接所述卡连接器(11)的第六弹片(11f)，所述第七金手指(527)电连接所述卡连接器(11)的第七弹片(11g)，所述第八金手指(528)电连接所述卡连接器(11)的第八弹片(11h)；
    当所述Nano SIM卡(3)安装于所述卡座组件(10)时，所述Nano SIM卡(3)的第一金手指(321)电连接所述卡连接器(11)的第三弹片(11c)，所述Nano SIM卡(3)的第二金手指(322)电连接所述卡连接器(11)的第四弹片(11d)，所述Nano SIM卡(3)的第三金手指(323)电连接所述卡连接器(11)的第五弹片(11e)，所述Nano SIM卡(3)的第四金手指(324)电连接所述卡连接器(11)的第六弹片(11f)，所述Nano SIM卡(3)的第五金手指(325)电连接所述卡连接器(11)的第七弹片(11g)，所述Nano SIM卡(3)的第六金手指(326)电连接所述卡连接器(11)的第八弹片(11h)。
  6. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持UFS接口协议；
    所述第一金手指(521)、所述第三金手指(523)、所述第九金手指(529)以及所述第十金手指(5210)用于传输数据信号，所述第二金手指(522)用于传输第二电源信号，所述第四金手指(524)用于传输参考时钟信号，所述第七金手指(527)用于传输地信号，所述第八金手指(528)用于传输第一电源信号。
  7. 根据权利要求6所述的存储卡(5)，其特征在于，所述第五金手指(525)和所述第六金手指(526)悬空设置；或者，所述第五金手指(525)或所述第六金手指(526)中的至少一个金手指用于传输检测信号。
  8. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持UFS接口协议；
    所述第一金手指(521)、所述第五金手指(525)、所述第九金手指(529)以及所述第十金手指(5210)用于传输数据信号，所述第二金手指(522)用于传输第二电源信号，所述第四金手指(524)用于传输参考时钟信号，所述第七金手指(527)用于传输地信号，所述第八金手指(528)用于传输第一电源信号。
  9. 根据权利要求8所述的存储卡(5)，其特征在于，所述第三金手指(523)和所述第六金手指(526)悬空设置；或者，所述第三金手指(523)或所述第六金手指(526)中的至少一个金手指用于传输检测信号。
  10. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持UFS接口协议；
    所述第一金手指(521)、所述第五金手指(525)、所述第九金手指(529)以及所述第十金手指(5210)用于传输数据信号，所述第二金手指(522)用于传输第二电源信号，所述第六金手指(526)用于传输参考时钟信号，所述第七金手指(527)用于传输地信号，所述第八金手指(528)用于传输第一电源信号。
  11. 根据权利要求10所述的存储卡(5)，其特征在于，所述第三金手指(523)和所述第四金手指(524)悬空设置；或者，所述第三金手指(523)或所述第四金手指(524)中的至 少一个金手指用于传输检测信号。
  12. 根据权利要求6至11中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)还设置有耐高压电路或保护开关，所述耐高压电路或所述保护开关与所述第四金手指(524)和所述第十金手指(5210)电连接。
  13. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持PCIe接口协议或SD接口协议；
    所述第三金手指(523)、所述第六金手指(526)、所述第九金手指(529)及所述第十金手指(5210)用于传输数据信号，所述第一金手指(521)用于传输第二电源信号，第七金手指(527)用于传输地信号，第八金手指(528)用于传输第一电源信号；
    所述第五金手指(525)用于传输时钟信号，所述第二金手指(522)和所述第四金手指(524)中的一者用于传输时钟信号。
  14. 根据权利要求13所述的存储卡(5)，其特征在于，所述第二金手指(522)和所述第四金手指(524)中的另一者悬空设置或者用于传输检测信号。
  15. 根据权利要求13或14所述的存储卡(5)，其特征在于，所述存储卡(5)还设置有耐高压电路或保护开关，所述耐高压电路或所述保护开关与所述第三金手指(523)和所述第十金手指(5210)电连接。
  16. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持PCIe接口协议或SD接口协议；
    所述第三金手指(523)、所述第六金手指(526)、所述第九金手指(529)及所述第十金手指(5210)用于传输数据信号，所述第二金手指(522)用于传输第二电源信号，第七金手指(527)用于传输地信号，第八金手指(528)用于传输第一电源信号；
    所述第五金手指(525)用于传输时钟信号，所述第一金手指(521)和所述第四金手指(524)中的一者用于传输时钟信号。
  17. 根据权利要求16所述的存储卡(5)，其特征在于，所述第一金手指(521)和所述第四金手指(524)中的另一者悬空设置或者用于传输检测信号。
  18. 根据权利要求1至5中任一项所述的存储卡(5)，其特征在于，所述存储卡(5)支持PCIe接口协议或SD接口协议；
    所述第六金手指(526)、所述第九金手指(529)及所述第十金手指(5210)用于传输数据信号，所述第一金手指(521)和所述第二金手指(522)中的一者用于传输第二电源信号，另一者用于传输数据信号；
    第七金手指(527)用于传输地信号，第八金手指(528)用于传输第一电源信号；
    所述第五金手指(525)用于传输时钟信号，所述第三金手指(523)和所述第四金手指(524)中的一者用于传输时钟信号。
  19. 根据权利要求18所述的存储卡(5)，其特征在于，所述第三金手指(523)和所述第四金手指(524)中的另一者悬空设置或者用于传输检测信号。
  20. 一种存储卡(6)，其特征在于，包括卡体(61)和卡接口(62)，所述卡接口(62)固定于所述卡体(61)且露出于所述卡体(61)的一侧，所述卡体(61)的尺寸与Nano SIM卡(3)的卡体(31)的尺寸相同；
    所述存储卡(6)的卡体(61)包括第一边(6111)、第二边(6112)、第三边(6113)和第四边(6114)，所述第一边(6111)和所述第三边(6113)相对设置并沿所述存储卡(6)的长度方向延伸，所述第二边(6112)和所述第四边(6114)相对设置并沿所述存储卡(6) 的宽度方向延伸，所述第二边(6112)与所述第四边(6114)的间距大于所述第一边(6111)与所述第三边(6113)的间距；
    所述存储卡(6)的卡体(61)的一个角为切角，所述切角设置于所述第一边(6111)和所述第二边(6112)之间；
    所述卡接口(62)包括呈阵列排布的八个金手指，八个所述金手指沿所述存储卡(6)的长度方向排布成第一列金手指和第二列金手指，所述第一列金手指位于所述第二边(6112)与所述第二列金手指之间，所述第一列金手指包括沿所述存储卡(6)的宽度方向排布的第一金手指(621)、第三金手指(623)、第五金手指(625)及第七金手指(627)，所述第二列金手指包括沿所述存储卡(6)的宽度方向排布的第二金手指(622)、第四金手指(624)、第六金手指(626)及第八金手指(628),所述第一金手指(621)位于所述第一边(6111)与所述第三金手指(623)之间，所述第二金手指(622)位于所述第一边(6111)与所述第四金手指(624)之间；
    所述第一金手指(621)至所述第六金手指(626)一一对应地与所述Nano SIM卡(3)的六个金手指位置对应；
    所述存储卡(6)支持UFS接口协议；
    所述第一金手指(621)、所述第四金手指(624)、所述第七金手指(627)及所述第八金手指(628)用于传输数据信号，所述第二金手指(622)用于传输参考时钟信号，所述第三金手指(623)用于传输第二电源信号，所述第五金手指(625)用于传输地信号，所述第六金手指(626)用于传输第一电源信号。
  21. 根据权利要求1至20中任一项所述的存储卡(5/6)，其特征在于，所述第一边(5111/6111)与所述第三边(5113/6113)的间距为8.8毫米，所述第二边(5112/6112)与所述第四边(5114/6114)的间距为12.3毫米。
PCT/CN2022/137987 2021-12-15 2022-12-09 存储卡 WO2023109682A1 (zh)

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CN111431549A (zh) * 2018-02-01 2020-07-17 华为技术有限公司 一种电子设备
CN217562852U (zh) * 2021-12-15 2022-10-11 华为技术有限公司 电子设备、卡连接器、卡座及卡座组件

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CN109948767A (zh) * 2018-02-01 2019-06-28 华为技术有限公司 存储卡和终端
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CN217562852U (zh) * 2021-12-15 2022-10-11 华为技术有限公司 电子设备、卡连接器、卡座及卡座组件

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