WO2023108877A1 - Dispositif de génération de champ acoustique à échelle micrométrique fondé sur une structure artificielle et son procédé de préparation - Google Patents

Dispositif de génération de champ acoustique à échelle micrométrique fondé sur une structure artificielle et son procédé de préparation Download PDF

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WO2023108877A1
WO2023108877A1 PCT/CN2022/076196 CN2022076196W WO2023108877A1 WO 2023108877 A1 WO2023108877 A1 WO 2023108877A1 CN 2022076196 W CN2022076196 W CN 2022076196W WO 2023108877 A1 WO2023108877 A1 WO 2023108877A1
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artificial structure
sound field
micron
acoustic wave
surface acoustic
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PCT/CN2022/076196
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English (en)
Chinese (zh)
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孟龙
周伟
郑海荣
牛丽丽
彭本贤
刘晓峻
程营
刘文杰
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中国科学院深圳先进技术研究院
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Publication of WO2023108877A1 publication Critical patent/WO2023108877A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/02—Analysing fluids
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/87—Electrodes or interconnections, e.g. leads or terminals

Definitions

  • the invention relates to the technical field of ultrasonic regulation, in particular to a micron-scale sound field generating device based on an artificial structure and a preparation method thereof.
  • Neuromodulation therapy is a relatively popular treatment method in recent years. It has a good therapeutic effect on a variety of neurological diseases and is developing rapidly. Neuromodulation is the excitation, inhibition or regulation of neurons or neural signal transduction in adjacent or distant parts of the central nervous system, peripheral nervous system and autonomic nervous system through implantable or non-implantable technology, electrical or chemical action function, so as to improve the quality of life of patients and improve the biomedical engineering technology of neurological function.
  • Ultrasound neuromodulation is a neuromodulation method proposed in recent years. It can non-invasively penetrate the skull to regulate the nerve nuclei of the brain. It has received extensive attention in the treatment of Parkinson's, epilepsy and other diseases.
  • ultrasonic neuromodulation mechanism is not clear.
  • ultrasonic nerve regulation is mainly carried out through ultrasonic transducers.
  • the range of sound fields generated by traditional transducers is huge, much larger than the size of a single neuron cell, so that all types of neurons within the range of the sound field will be stimulated by ultrasonic waves. It is limited to study the mechanism of ultrasound neuromodulation from the perspective of single neurons.
  • An object of the present invention is to provide a micron-scale sound field generating device based on an artificial structure and a preparation method thereof.
  • the device can regulate the sound field so that the range of the sound field is smaller than the size of a single neuron, which is convenient for ultrasonic monitoring from the perspective of a single neuron. The study of neuromodulatory mechanisms.
  • the present invention provides a micron-scale sound field generation device based on an artificial structure
  • the micron-scale sound field generation device based on an artificial structure includes a surface acoustic wave chip and at least one artificial structure coupled to the surface acoustic wave chip, the The surface acoustic wave chip is used to generate a surface wave sound field, and the artificial structure is used to regulate the surface wave sound field generated by the surface acoustic wave chip, so that the range of the surface wave sound field is smaller than the wavelength of the sound wave, thereby forming a micron-scale sound field.
  • the surface acoustic wave chip includes a piezoelectric substrate and interdigital electrodes plated on the piezoelectric substrate, and the artificial structure is coupled to the surface acoustic wave chip provided with a Said interdigitated electrode side.
  • the piezoelectric substrate is 128° YX double-sided polished lithium niobate, Y36 tangential lithium niobate, X tangential lithium niobate, bismuth germanate, lithium tantalate, gallium arsenide , zinc oxide, aluminum nitride in any one.
  • the artificial structure includes a filled artificial structure, and the filled artificial structure includes a structural base and a filling material filling holes in the structural base, and the filling material is gallium, zinc , copper, nickel, lead in one or more.
  • the artificial structure is a columnar artificial structure
  • the columnar artificial structure includes a structural base and periodically arranged columnar structures formed on the structural base.
  • the artificial structure is coupled to the surface acoustic wave chip through any one of water, agar, and polyvinyl alcohol resin.
  • the present invention also provides a method for preparing a micron-scale sound field generating device based on an artificial structure, comprising the steps of:
  • the step S1 includes the steps of:
  • the step S2 includes the steps of:
  • the filler is filled in the filling hole by microinjection, and the filling substance is gallium, zinc, copper, nickel, lead one or more of .
  • the step S2 includes the steps of:
  • the negative photoresist is removed by ultrasonic cleaning or polishing.
  • the artificial structure is coupled to the surface acoustic wave chip through any one of water, agar, and polyvinyl alcohol resin.
  • the artificial structure-based micron-scale sound field generation device of the present invention is formed by coupling the surface acoustic wave chip with the artificial structure, and the surface acoustic wave chip can be well compatible with the artificial structure, so as to control the sound field to realize the micron-scale sound field Formation; the specific structure of the artificial structure can make it produce the singular characteristics in nature, so that the sound wave can be effectively manipulated, and the regulation of the surface wave sound field generated by the surface acoustic wave chip can be realized, and can be designed according to actual needs. Different structural forms can produce the surface wave sound field of the desired form.
  • the present invention combines the surface acoustic wave chip and the artificial structure to form a micron-scale sound field generating device based on the artificial structure, which generates a surface wave sound field at the scale of a single neuron, realizes the regulation of a single neuron, and combines electrophysiological means to control a single neuron.
  • Neuron firing can be recorded to study the mechanism of ultrasound neuromodulation.
  • the artificial structure-based micron-scale sound field generating device of the present invention is based on the acoustic artificial structure to regulate the sound field, and only needs at least one vibrating element (that is, a single vibrating element surface acoustic wave chip) and at least one acoustic artificial structure to achieve the regulation of the sound field
  • the purpose is simple in structure, low in cost and easy to realize.
  • Fig. 1 is a schematic structural diagram of the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 2 is a schematic diagram of the manufacturing process of the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 3 is a simulation diagram of the micron-scale sound field generated by the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 4 is a schematic block diagram of the manufacturing method of the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 5 is a schematic block diagram of a method for fabricating a surface acoustic wave chip of the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 6 is a schematic block diagram of a method for preparing a filled artificial structure based on the artificial structure-based micron-scale sound field generating device according to the first preferred embodiment of the present invention.
  • Fig. 7 is a schematic structural diagram of the artificial structure-based micron-scale sound field generating device according to the second preferred embodiment of the present invention.
  • Fig. 8 is a schematic diagram of the manufacturing process of the artificial structure-based micron-scale sound field generating device according to the second preferred embodiment of the present invention.
  • Fig. 9 is a simulation diagram of the micron-scale sound field generated by the artificial structure-based micron-scale sound field generating device according to the second preferred embodiment of the present invention.
  • Fig. 10 is a schematic block diagram of the preparation method of the columnar artificial structure of the artificial structure-based micron-scale sound field generating device according to the second preferred embodiment of the present invention.
  • Fig. 11 is a schematic structural diagram of the artificial structure-based micron-scale sound field generating device according to the third preferred embodiment of the present invention.
  • Fig. 12 is a schematic structural diagram of the artificial structure-based micron-scale sound field generating device according to the fourth preferred embodiment of the present invention.
  • artificial structure-based micron-scale sound field generating device 100 surface acoustic wave chip 10; piezoelectric substrate 11; interdigitated electrodes 12; artificial structure 20; filled artificial structure 21; columnar artificial structure 22; structural substrate 211 ; filling hole 212 ; filling substance 213 ; columnar structure 221 ; coupling layer 30 ; positive photoresist 41 ; negative photoresist 42 .
  • the term “a” should be understood as “at least one” or “one or more”, that is, in one embodiment, the number of an element can be one, while in another embodiment, the number of the element
  • the quantity can be multiple, and the term “a” cannot be understood as a limitation on the quantity.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected, or electrically connected, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction of two components relation.
  • installation connection
  • connection connection
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected, or integrally connected; it can be mechanically connected, or electrically connected, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediary, and it can be the internal communication of two components or the interaction of two components relation.
  • Surface acoustic wave also called Rayleigh wave
  • Rayleigh wave is an ultrasonic wave that propagates along the surface of an object, and is usually generated by an interdigital transducer.
  • the interdigital transducer is formed by plating interdigital electrodes on a piezoelectric substrate.
  • a sine wave signal of a certain frequency is used, a surface wave signal of the corresponding frequency is generated. It has the characteristics of high frequency, miniaturization and low energy loss.
  • the surface wave chip can be well compatible with micro-artificial structures, thereby adjusting the sound field to achieve the formation of a micron-level sound field.
  • the acoustic artificial structure can produce singular characteristics that do not exist in nature, thereby effectively manipulating sound waves, realizing the regulation of the sound field, and can design different structural forms according to actual needs, so as to produce the desired shape. sound field.
  • the micron-scale sound field generation device based on the artificial structure of the present invention combines the surface acoustic wave chip and the acoustic artificial structure, and the surface acoustic wave chip is a micro-ultrasound generation device, which can be used with neurobiological means such as calcium imaging and patch clamp.
  • the acoustic artificial structure can regulate the surface wave sound field generated by the surface acoustic wave chip, so that the sound wave is localized within the range of a single neuron, so as to realize precise regulation of a single neuron.
  • the present invention can combine electrophysiological recording to realize the research on the mechanism of ultrasonic nerve regulation at the single neuron scale.
  • the present invention regulates the sound field based on the acoustic artificial structure, only needs at least one vibration element and at least one acoustic artificial structure to achieve the purpose of regulating the sound field, has a simple structure, low cost, and is easy to realize.
  • the artificial structure-based micron-scale sound field generating device 100 of the present invention and its manufacturing method are specifically illustrated.
  • the artificial structure-based micron-scale sound field generating device 100 includes a surface acoustic wave chip 10 and at least one artificial structure 20 coupled to the surface acoustic wave chip 10, and the surface acoustic wave chip 10 is used to generate surface waves Sound field, the artificial structure 20 is used to regulate the surface wave sound field generated by the surface acoustic wave chip 10, so that the range of the surface wave sound field is smaller than the sound wave wavelength, thereby forming a micron-scale sound field.
  • the artificial structure 20 is coupled to the surface acoustic wave chip 10 through a substance with good conduction characteristics, such as the artificial structure 20 is coupled to the surface acoustic wave chip 10 through any one of water, agar, and polyvinyl alcohol resin.
  • a coupling layer 30 is also formed between the surface acoustic wave chip 10 , that is, the artificial structure 20 and the surface acoustic wave chip 10 .
  • the surface acoustic wave chip 10 includes a piezoelectric substrate 11 and an interdigital electrode 12 plated on the piezoelectric substrate 11, and the artificial structure 20 is coupled to the arrangement of the surface acoustic wave chip 10.
  • the piezoelectric substrate 11 is 128 ° YX double-sided polished lithium niobate, Y36 tangential lithium niobate, X tangential lithium niobate, Bi 12 GeO 2 (bis-germanic acid), LiTaO 3 ( Lithium tantalate), GaAs (gallium arsenide), ZnO (zinc oxide), and AlN (aluminum nitride).
  • lithium niobate polished on both sides of 128° YX is selected as the piezoelectric substrate 11 .
  • the artificial structure 20 adopts a filling type artificial structure 21, and the filling type artificial structure 21 includes a structural base 211 and filling holes 212 filled in the structural base 211.
  • the structural base 211 can be any one of silicon wafer or tungsten wafer
  • the filling material 213 is a material with a huge difference in acoustic impedance from the structural base 211, such as the filling material 213 is gallium, One or more of zinc, copper, nickel, lead.
  • FIG. 2( a ) to FIG. 2( j ) the manufacturing process of the artificial structure-based micron-scale sound field generating device 100 of the first preferred embodiment of the present invention is specifically illustrated.
  • the preparation method of the micron-scale sound field generating device 100 based on the artificial structure is as follows:
  • the preparation of the surface acoustic wave chip 10 is mainly made by plating interdigital electrodes 12 and recording electrodes on the piezoelectric substrate 11 .
  • 128°YX double-sided polished lithium niobate is selected as the piezoelectric substrate 11 .
  • the process of making the surface acoustic wave chip 10 mainly includes processes such as gluing, exposure, development, sputtering, and peeling off, wherein FIG. 2(a) to FIG. 2(d) show the surface acoustic wave chip 10. Production Method.
  • the present invention can study the influence of these parameters on device insertion loss and device bandwidth by adjusting the metal film material, finger logarithm, and acoustic aperture size, and design the finger width of the surface acoustic wave chip, thereby regulating the acoustic The frequency of the surface wave.
  • the preparation process of the filled artificial structure 21 is shown in Figure 2(e) to Figure 2(i), the filled artificial structure 21 is mainly based on the near-field diffraction effect to realize the Controlling the sound field.
  • the negative photoresist is relatively thick and has a good protective effect during etching. It is also possible if a thick positive photoresist is selected, that is, the positive and negative photoresists used in the present invention can be used interchangeably. In addition, the positive and negative photoresists used in the present invention can also be used for micro-nano processing of photoresist. Such as SU-8, AZ4500, etc., the present invention is not limited thereto.
  • the hole-like structure may also be square or irregular in shape, which is not limited in the present invention.
  • the present invention does not limit the filling method.
  • the surface may be uneven after filling, which will affect the control effect, so it needs to be smoothed.
  • the filled artificial structure 21 is coupled to the surface acoustic wave chip 10 through water or other sound-conducting materials to obtain a micron-scale sound field generating device based on an artificial structure as shown in FIG. 2(j) 100, so that the surface wave sound field generated by the filled artificial structure 21 and the surface acoustic wave chip 10 interacts to form a sound field of a desired shape.
  • the liquid (such as water) and the sound-conducting material only need to be completely filled between the artificial structure 20 and the surface of the surface acoustic wave chip 10 without air, thus completing the connection between the artificial structure 20 and the surface acoustic wave chip 10
  • the coupling between the surface acoustic wave chips 10 is described.
  • the sound guide material can be any one of agar and polyvinyl alcohol resin, which is not limited in the present invention.
  • Fig. 3 is a simulation diagram of the micron-scale sound field generated by the artificial structure-based micron-scale sound field generating device according to the first preferred example of the present invention.
  • the ordinate in the figure represents the sound wave intensity, and the larger the value, the darker the color , representing the greater the intensity of the sound wave.
  • the sound wave energy in the simulated sound field area is uniformly distributed and has a large range.
  • the sound field energy generated by the surface acoustic wave chip 10 is focused to one or more small point-like areas, and the other positions The energy of the sound wave is much smaller than the point region, thus proving that the artificial structure-based micron-scale sound field generating device of the present invention can generate a micron-scale sound field.
  • the artificial structure 20 of the present invention controls the surface wave acoustic field generated by the surface acoustic wave chip 10 to generate a micron-scale sound field of 5-150 ⁇ m, which is smaller than or equal to the scale of a single neuron. Therefore, the present invention can combine electrical Physiological technology, using the surface acoustic wave chip 10 to realize real-time recording of electrical signals under ultrasonic stimulation of a single neuron, so as to study the mechanism of ultrasonic nerve regulation from the perspective of a single neuron.
  • the present invention designs artificial structure dimensions and filling materials based on SAW frequency design, experimental sound field requirements and simulation results.
  • the hole-like structure is prepared by glue coating, photolithography, development and etching, and the filling material is filled into the hole-like structure by microinjection and cured.
  • the artificial structure 20 is coupled to the surface acoustic wave chip 10 through a liquid or a sound-conducting material to obtain the micron-scale sound field generating device based on the artificial structure.
  • the present invention also provides a preparation method of the artificial structure-based micron-scale sound field generating device 100, as shown in FIG. 4 , the artificial structure-based micron-scale sound field generation
  • the preparation method of device 100 comprises steps:
  • step S1 includes the steps of:
  • step S2 includes the steps of:
  • the filler is filled in the filling hole 212 by means of microinjection, and the filling substance 213 is gallium, zinc, copper, nickel, lead one or more.
  • the artificial structure 20 is coupled to the surface acoustic wave chip 10 through any one of water, agar, and polyvinyl alcohol resin.
  • the artificial structure-based micron-scale sound field generating device 100 includes a surface acoustic wave chip 10 and an artificial structure coupled to the surface acoustic wave chip 10, the surface acoustic wave chip 10 is used to generate a surface wave sound field, and the artificial structure 20 is used to regulate the surface wave sound field generated by the surface acoustic wave chip 10, so that the range of the surface wave sound field is smaller than the wavelength of the sound wave, thereby forming a micron-scale sound field.
  • the second preferred embodiment is a modified embodiment of the first preferred embodiment, and the difference from the first preferred embodiment is that the artificial structure-based micron-scale sound field generating device 100 of the second preferred embodiment adopts Columnar artificial structures22.
  • the columnar artificial structure 22 includes a structural base 211 and periodically arranged columnar structures 221 formed on the structural base 211 .
  • the columnar artificial structure 22 is different from the filled artificial structure 21 in the first preferred embodiment in structure and preparation method.
  • the preparation method of the micron-scale sound field generating device 100 based on the artificial structure is as follows:
  • the preparation of the surface acoustic wave chip 10 is mainly made by plating interdigital electrodes 12 and recording electrodes on the piezoelectric substrate 11 .
  • 128°YX double-sided polished lithium niobate is selected as the piezoelectric substrate 11 .
  • the process of making the surface acoustic wave chip 10 mainly includes processes such as gluing, exposure, development, sputtering, and peeling off, wherein FIG. 8(a) to FIG. 8(d) show the surface acoustic wave chip 10. Production Method.
  • Coating Spin-coat positive photoresist 41 (such as photoresist AZ5214) at 3000 rpm on the surface of the thoroughly cleaned piezoelectric substrate 11 for 30 seconds, place the chip on a 65° C. heating plate and bake for 3 minutes. The thickness of the photoresist was tested using a step meter, and the thickness of the photoresist was about 1.5 ⁇ m, as shown in FIG. 8( a ).
  • photoresist 41 such as photoresist AZ5214
  • the present invention can study the influence of these parameters on device insertion loss and device bandwidth by adjusting the metal film material, finger logarithm, and acoustic aperture size, and design the finger width of the surface acoustic wave chip, thereby regulating the acoustic The frequency of the surface wave.
  • FIG. 8(a) to FIG. 8(d) is the same as the process of FIG. 2(a) to FIG. 2(d).
  • the preparation process of the filled artificial structure 21 is shown in FIG. 8(e) to FIG. 8(i).
  • the columnar artificial structure 22 generates a zero-dimensional angle at a specific position by constructing a high-order acoustic topological insulator. state, so as to realize the sub-wavelength focusing of the elastic wave, so as to realize the control of the surface wave sound field of the surface acoustic wave chip 10 .
  • the columnar artificial structure 22 is coupled to the surface acoustic wave chip 10 through water or other sound-conducting materials to obtain a micron-scale sound field generating device 100 based on an artificial structure as shown in FIG. 8(i) , so that the surface wave sound field generated by the columnar artificial structure 22 and the surface acoustic wave chip 10 interacts to form a sound field of a desired shape.
  • Fig. 9 is a simulation diagram of the micron-scale sound field generated by the artificial structure-based micron-scale sound field generating device according to the second preferred example of the present invention
  • the ordinate in the figure represents the sound wave intensity
  • the sound wave energy in the simulated sound field area is uniformly distributed and has a large range.
  • the sound field energy generated by the surface acoustic wave chip 10 is focused to one or more small point-shaped areas, and the sound waves at other positions The energy is much smaller than the point region, thus proving that the artificial structure-based micron-scale sound field generating device of the present invention can generate a micron-scale sound field.
  • the artificial structure 20 of the present invention controls the surface wave acoustic field generated by the surface acoustic wave chip 10 to generate a micron-scale sound field of 5-150 ⁇ m, which is smaller than or equal to the scale of a single neuron. Therefore, the present invention can combine electrical Physiological technology, using the surface acoustic wave chip 10 to realize real-time recording of electrical signals under ultrasonic stimulation of a single neuron, so as to study the mechanism of ultrasonic nerve regulation from the perspective of a single neuron.
  • the present invention designs the size and arrangement of the columnar artificial structure 22 through the surface acoustic wave frequency design, experimental sound field requirements and simulation results.
  • the columnar artificial structure 22 is prepared by glue coating, photolithography, development and etching.
  • the artificial structure-based micron-scale sound field generating device 100 is obtained by coupling the columnar artificial structure 22 to the surface acoustic wave chip 10 through a liquid or a sound-conducting material.
  • the step S2 includes the steps of:
  • the negative photoresist 42 can be removed by ultrasonic cleaning or grinding, which is not limited in the present invention.
  • the present invention also provides a micron-scale sound field generating device 100 based on artificial structures 20 using a plurality of artificial structures 20.
  • the artificial-based The micron-scale sound field generating device 100 of the structure can adopt two or more filling-type artificial structures 21, and can also adopt two or more columnar artificial structures 22; in the fourth preferred embodiment, the artificial-based Structured micron-scale sound field generating device 100 may also use a combination of filled artificial structures 21 and columnar artificial structures 22 to meet the requirements of different stimulation sites, which is not limited in the present invention.
  • the present invention uses the artificial structure 20 to regulate the surface wave sound field generated by the surface acoustic wave chip 10, so that the range of the sound field is smaller than the wavelength of the sound wave, localized to the scale of a single neuron, and the stimulation of a single neuron is realized. . Since the surface acoustic wave chip 10 and the artificial structure 20 are both prepared by micro-nano processing technology, the structure is small and compatible with calcium imaging, patch clamp and other means, so it is easy to study the neural regulation mechanism.
  • the artificial structure 20 includes a filled artificial structure 21 and a columnar artificial structure 22, through the structural design of the artificial structure 20, multiple precise focal points or different sound field shapes can be realized in a plane, thereby achieving Simultaneous stimulation of multiple locations.
  • the artificial structure-based micron-scale sound field generating device 100 of the present invention can be separated from the sound source.
  • one sound source can be used, and multiple artificial structures 20 can be used.
  • the artificial structure 20 is continuously placed at the sound source for stimulation, thereby realizing high-throughput regulation.
  • the artificial structure-based micron-scale sound field generating device of the present invention can be applied not only to the technical field of neuromodulation, but also to technical fields such as sonoporation, acoustic manipulation, and acoustic flow.
  • the application of the micron-scale sound field generating device based on the artificial structure is not limited.

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Abstract

Dispositif de génération de champ acoustique à l'échelle micrométrique (100) fondé sur une structure artificielle et son procédé de préparation. Le dispositif de génération de champ acoustique à l'échelle micrométrique (100) fondé sur une structure artificielle comprend une puce à ondes acoustiques de surface (10), et au moins une structure artificielle (20) couplée à la puce à ondes acoustiques de surface (10). La puce à ondes acoustiques de surface (10) est utilisée pour générer un champ d'ondes acoustiques de surface, et la structure artificielle (20) est utilisée pour réguler et commander le champ d'ondes acoustiques de surface généré par la puce à ondes acoustiques de surface (10), de telle sorte que la plage du champ d'ondes acoustiques de surface est inférieure à la longueur d'onde de l'onde acoustique, un champ acoustique à l'échelle micrométrique est ensuite formé, et ainsi un champ d'ondes acoustiques de surface présentant une échelle de neurone unique est généré. La régulation et la commande d'un neurone unique sont obtenues, la décharge de neurone unique est enregistrée en combinaison avec un moyen électrophysiologique, et par conséquent le mécanisme de régulation et de commande de nerf ultrasonore est étudié.
PCT/CN2022/076196 2021-12-18 2022-02-14 Dispositif de génération de champ acoustique à échelle micrométrique fondé sur une structure artificielle et son procédé de préparation WO2023108877A1 (fr)

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CN202111557230.4A CN116322270A (zh) 2021-12-18 2021-12-18 基于人工结构的微米级声场生成装置及其制备方法
CN202111557230.4 2021-12-18

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