WO2023091547A1 - Étalonnage de position de substrat pour supports de substrat dans des systèmes de traitement de substrat - Google Patents

Étalonnage de position de substrat pour supports de substrat dans des systèmes de traitement de substrat Download PDF

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Publication number
WO2023091547A1
WO2023091547A1 PCT/US2022/050209 US2022050209W WO2023091547A1 WO 2023091547 A1 WO2023091547 A1 WO 2023091547A1 US 2022050209 W US2022050209 W US 2022050209W WO 2023091547 A1 WO2023091547 A1 WO 2023091547A1
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WO
WIPO (PCT)
Prior art keywords
substrate
support
substrate support
backside
backside pressure
Prior art date
Application number
PCT/US2022/050209
Other languages
English (en)
Inventor
Tomoharu Matsushita
Aravind Kamath
Jallepally Ravi
Cheng-Hsiung Tsai
Hiroyuki Takahama
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US17/530,538 external-priority patent/US20220099426A1/en
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2023091547A1 publication Critical patent/WO2023091547A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices

Definitions

  • Embodiments of the present disclosure generally relate to substrate processing systems, and more particularly, to positioning of substrates on a substrate support in such processing systems.
  • a method for positioning a substrate on a substrate support includes: obtaining a plurality of backside pressure values corresponding to a plurality of different substrate positions on a substrate support by repeatedly placing a substrate in a position on the substrate support, and vacuum chucking the substrate to the substrate support and measuring a backside pressure; and analyzing the plurality of backside pressure values to determine a calibrated substrate position.
  • an apparatus for calibrating a substrate position on a substrate support having a vacuum chuck includes: a calibration substrate comprising a solid disc having a plurality of through holes disposed through the solid disc along a circle having a diameter proximate an outer diameter of the solid disc.
  • an apparatus for calibrating a substrate position on a substrate support having a vacuum chuck includes: a calibration substrate comprising a solid disc having a diameter of about 150 mm, about 200 mm, about 300 mm, or about 450 mm, and a thickness of about 450 micrometers to about 1500 micrometers, wherein the solid disc is fabricated from quartz, silicon, silicon carbide, or aluminum nitride; and a plurality of through holes disposed through the solid disc proximate an outer diameter of the solid disc.
  • Figure 1 is a flow chart of a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 2 is a schematic top view of a substrate support used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 3 is a schematic side view of a process chamber used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 4 is a schematic partial side view of a substrate support and substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 5 is a schematic partial side view of another substrate support and substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 6 is a schematic partial side view of another substrate support and substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 7 is a schematic top isometric view of a substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 8 is a schematic top isometric view of another substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 9 is a schematic top isometric view of another substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 10 is a graph of backside pressure values versus substrate position in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figure 11 is an illustrative graph of backside pressure versus substrate position in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Embodiments of methods and apparatus for substrate position calibration for substrate supports in substrate processing systems are provided herein.
  • the inventive methods and apparatus advantageously facilitate calibration of substrate position on a substrate support without performing any process on the substrate.
  • the inventive techniques further advantageously eliminate the requirement of analyzing process results and process contour mapping.
  • the inventive techniques are further advantageously more repeatable and thus reduce or eliminate variation of results dependent upon the operator performing the calibration.
  • Figure 1 is a flow chart of a method 100 of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • Figures 2-9 depict various embodiments of processing equipment used in connection with the method 100 and are described in greater detail below.
  • the method 100 may be performed at any time when a substrate is to be disposed on a substrate support for processing.
  • the method 100 may be performed at the beginning of a run of substrates, after maintenance, repair, or installation of the substrate support, after maintenance, repair, or installation of a substrate transfer robot that places the substrate the substrate support, after bringing the processing chamber on-line after being shut down, after a change in process temperature for a process to be performed, or at any time that the position of the substrate on the substrate support appears to be incorrect.
  • Figure 2 is a schematic top view of a substrate support suitable for use in connection with the method 100 in accordance with at least some embodiments of the present disclosure.
  • a substrate support 200 is a vacuum chuck having a body 202 including a vacuum region 204 defined between support structures of the substrate support 200.
  • an outer seal band, or seal ring 206 is provided having an outer diameter larger than that of a substrate to be supported and an inner diameter less than that of the substrate to be supported such that a vacuum may be maintained within the vacuum region when a substrate is properly positioned atop the seal ring 206.
  • a plurality of support pins 210 may be arranged atop the support surface within the vacuum region 204.
  • a plurality of lift pin openings 212 may also be provided to facilitate lift pins to selectively raise and lower the substrate onto the substrate support 200.
  • corresponding lift pin seal rings 214 may be provided to limit or prevent leakage from the lift pin openings 212 into the vacuum region 204.
  • Upper surfaces of the seal ring 206, support pins 210, and lift pin seal rings 214 collectively form support surfaces for the substrate when placed on the substrate support.
  • At least one opening 208 is provided to couple the vacuum region 204 to a vacuum source (e.g., pump 310 shown in Figure 3).
  • FIG. 3 is a schematic side view of a process chamber suitable for use in connection with the method 100 in accordance with at least some embodiments of the present disclosure.
  • the configuration and arrangement of components of the process chamber shown in Figure 3 is merely exemplary and not meant to be limiting. In addition, conventional components or other details not necessary for the understanding of the disclosure are omitted from the Figures so as not to obscure the disclosure.
  • a process chamber 304 contains a substrate support, such as the substrate support 200 discussed above in an interior volume 332 of the process chamber 304.
  • the substrate support 200 is a vacuum chuck and is coupled to a vacuum source, such as pump 310 or other suitable vacuum source.
  • a pressure sensor such as a pressure gauge 330 is operatively coupled to the vacuum region 204 to measure the backside pressure in the vacuum region 204.
  • the substrate support 200 may further include a heater, such as resistive heater 312 coupled to heater power source 314.
  • a substrate 302 is shown disposed on the seal ring 206 of the substrate support 200.
  • the process chamber 304 includes an opening, such as a slit valve 306 that selectively opens the process chamber 304 to facilitate moving substrates into and out of the interior volume 332 of the process chamber 304, for example, via a substrate transfer robot 308.
  • Control of the substrate transfer robot 308 facilitate control of the position of the substrate 302 over the substrate support 200, and ultimately, of the position of the substrate 302 on the substrate support 200 when transferred from the substrate transfer robot 308 to the substrate support 200.
  • a plurality of lift pins 328 may be provided to assist in the transfer of the substrate 302 between the substrate transfer robot 308 and the substrate support 200.
  • the process chamber 304 is configured for performing one or more of a variety of processes, such as deposition processes.
  • a gas source 316 is coupled to the interior volume of the process chamber 304 to provide process gases needed for substrate processing (e.g., deposition).
  • the gas source 316 provides at least one inert gas, such nitrogen gas or a noble gas (such as argon or the like).
  • a pump 326 is coupled to the interior volume 332 of the process chamber 304 to maintain a desired pressure within the process chamber and to remove process gases and processing byproducts during processing.
  • a controller 318 is coupled to components of the process chamber 304, including the pressure gauge 330, the substrate transfer robot 308, and the like.
  • the controller 318 may be any form of general-purpose computer processor that can be used in an industrial setting for controlling various chambers and sub-processors.
  • the controller includes a central processing unit (CPU) 320, memory 322, and support circuits 324.
  • the memory, or computer-readable medium, 322 of the CPU 320 may be one or more of readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk, or any other form of digital storage, local or remote.
  • the support circuits 324 are coupled to the CPU 320 for supporting the processor in a conventional manner. These circuits include cache, power supplies, clock circuits, input/output circuitry and subsystems, and the like.
  • One or more methods and/or processes may generally be stored in the memory 322 as a software routine that, when executed by the CPU 320, causes the process chamber 304 to perform processes, such as the substrate positioning methods disclosed herein and other processes (such as deposition processes).
  • the method 100 described herein may be automatedly performed under control of the controller 318, with the calibrated substrate transfer robot handoff position stored for repeated use for transferring substrates until recalibration is desired.
  • the method 100 generally begins at 102, where a plurality of backside pressure values are obtained at a corresponding a plurality of different substrate positions on a substrate support.
  • Each backside pressure value is obtained by placing a substrate in a position on a substrate support, as indicated at 110, vacuum chucking the substrate to the substrate support, as indicated as 112, and measuring a backside pressure, as indicated at 114.
  • a pressure in the interior volume 332 of the process chamber is maintained at a pressure above that in the vacuum region 204, such as at least about 1 Torr about the pressure in the vacuum region 204.
  • a pressure within the process chamber containing the substrate support (and the substrate) is maintained at about 5 Torr (although other pressures could also be used).
  • the pressure is maintained while flowing an inert gas, such nitrogen gas or a noble gas (e.g., argon or the like), within the process chamber.
  • the pressure within the process chamber is optionally increased to a predefined pressure prior to measuring backside pressure, as indicated at 113.
  • the predefined pressure is about 20 to about 40 Torr (although other pressures could also be used).
  • the substrate support may be heated to a first temperature during the placing of the substrate, vacuum chucking of the substrate, and measuring of the backside pressure values.
  • the first temperature is a temperature at which a subsequent process (e.g., such as a deposition process) is to be performed.
  • the placing and chucking of the substrate on the substrate support and the measuring of the corresponding backside pressure is repeated at different substrate positions, obtained by controlling parameters of a substrate transfer robot that places the substrate on the substrate support (for example, substrate transfer robot 308).
  • the plurality of substrate positions are obtained by adjusting a hand off position of a substrate transfer robot that moves the substrate into the process chamber and positions the substrate over the substrate support. For example, by controlling the extension and/or rotation of the substrate transfer robot (or other parameters that impact the position of the substrate with respect to the substrate support), various positions of the substrate on the substrate support may be obtained and the corresponding backside pressure may be measured.
  • Figures 10 and 11 are graphs of backside pressure values obtained and used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • a measured backside pressure varies dependent upon the hand-off offset (or position) of the substrate transfer robot.
  • the position of the substrate transfer robot determines the position of the substrate positioned over the substrate support, and hence the position of the substrate on the substrate support when the transfer is complete.
  • Figures 10-11 depict exemplary data based upon lateral hand-off offset.
  • the hand-off offset (or position) of the substrate transfer robot can be varied in two dimensions along a substrate transfer plane parallel to the substrate support surface to obtain more precise substrate positioning data.
  • Control of the substrate transfer robot can be along x-y coordinates within the substrate transfer plane, using extension and rotation coordinates within the substrate transfer plane, or any other suitable parameters of substrate hand off position control.
  • the backside pressure will increase with increases in leaks from the interior volume of the process chamber into the vacuum region of the substrate support (e.g., an increase in the leak rate).
  • a calibration substrate can be a standard-sized substrate (e.g., a substrate having dimensions equivalent to a substrate for which the substrate support was designed to support, such as standard semiconductor wafer sizes, for example, about 450 mm, about 300 mm, about 200 mm, about 150 mm, or the like.)
  • the calibration substrate is intended to be handled by the same equipment as production substrates and thus has a thickness similar to standard semiconductor wafers (e.g., from about 450 micrometers to about 1500 micrometers).
  • the calibration substrate may be fabricated from any process-compatible materials, such as quartz, silicon, silicon carbide, aluminum nitride, or the like.
  • the calibration substrate is solid (e.g., has no through holes or perforations formed thereon).
  • the calibration substrate can be a production substrate (e.g., a silicon or semiconductor substrate upon which a subsequent process is to be performed in the same process chamber).
  • the calibration substrate can be a non-production substrate.
  • the calibration substrate can be a blank substrate. The blank substrate can be formed of a homogenous material and may be uncoated or uniformly coated.
  • Figure 4 is a schematic partial side view of a substrate support and substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • the substrate support shown in Figure 4 can be as described with respect to Figures 2-3 above.
  • a substrate 402 which is a solid substrate
  • a backside of the substrate is disposed atop the seal ring 206.
  • a center of the substrate is aligned with a center of the seal ring 206 (e.g., they are concentric) and the edge of the substrate and the outer diameter of the seal ring are equidistantly spaced apart around the entire circumference of the substrate.
  • the edge of the substrate is not centered with respect to the seal ring 206 and one edge may be either disposed atop a smaller portion of the seal ring 206 or may be completely off of the seal ring 206.
  • Such misalignment causes varying leaks from the internal volume of the process chamber into the vacuum region 204 (the amount of leakage dependent upon the amount of misalignment).
  • edge ring 404 may be disclosed around the substrate support, limiting the amount of possible misalignment of the substrate 402 atop the substrate support.
  • a width 408 of the seal ring is small enough and a distance 406 between the outer edge of the substrate and an adjacent process chamber component (e.g., the edge ring 404) is large enough, such that there is sufficient room for substrate mis-position to create a large enough leak to measurably impact the backside pressure.
  • Figure 10 depicts a graph 1000 showing a plot 1006 of substrate transfer robot hand off offset (axis 1002) versus backside pressure (axis 1004).
  • the plot 1006 shows that a centered position of the substrate transfer robot hand off corresponds to the lowest backside pressure measurement.
  • Increasing offset of the substrate transfer robot in either direction results in greater leaks and thus higher backside pressure readings.
  • the edge of the substrate moves off of the seal ring and the backside pressure increases rapidly, as seen by the nearly vertical portions of plot 1006.
  • a plurality of backside pressure values can be analyzed to determine a substrate position having an associated backside pressure value that is a minimum value of the plurality of backside pressure values or that is within a predetermined tolerance of the minimum value of the plurality of backside pressure values.
  • the size of the gap between the edge of the substrate and the edge ring is small enough and the width of the seal ring is large enough such that there is no substantial leak between the substrate and the seal ring regardless of the position of the substrate on the substrate support due to the limited lateral range of motion of the substrate.
  • Figure 5 depicts a schematic partial side view of a substrate support and substrate used in connection with a method of positioning a substrate on a substrate support in accordance with at least some embodiments of the present disclosure.
  • the substrate support shown in Figure 5 can be as described with respect to Figures 2-3 above.
  • a backside of the substrate is disposed atop the seal ring 206.
  • a center of the substrate is aligned with a center of the seal ring 206 (e.g., they are concentric) and the edge of the substrate and the outer diameter of the seal ring are equidistantly spaced apart around the entire circumference of the substrate.
  • a width 508 of the seal ring is large enough in relation to a distance 506 between the outer edge of the substrate and an adjacent process chamber component (e.g., the edge ring 404) such that misalignment of a solid substrate may not cause a leak into the vacuum region 204 sufficient to determine the proper position based upon backside pressure measurements, or the leak may be small enough such that the determination may be more difficult and less precise.
  • the substrate 502 may include a plurality of through holes 510 disposed through a portion of the substrate corresponding to the location of the seal ring.
  • corresponding to the location of the seal ring means that the through holes will be disposed atop the seal ring when the substrate is centered atop the substrate support.
  • Each of the through holes 510 may have a diameter selected to allow sufficient leakage to facilitate the measurements as described herein.
  • the through holes 510 may have a diameter of about 0.02 inches (about .5 mm) to about 0.07 inches (about 1.8 mm), or from about 0.03 inches (about .75 mm) to about 0.04 inches (about 1 mm).
  • the through holes 510 are positioned along a circle having a diameter proximate to but greater than an inner diameter of the seal ring (as shown in Figure 5).
  • the through holes 510 are positioned such that a distance 512 between the center of the through hole and the edge of the seal ring (e.g., the inner diametral edge as shown in Figure 5) is selected to allow for leakage into the vacuum region 204 from the interior volume of the process chamber through the through hole 510 when the substrate 502 is positioned off-center on the substrate support.
  • the through holes 510 may be arranged with their respective centers on a circle having a diameter of about 10.939 inches (about 277.85 mm) to about 11.515 inches (292.48 mm), such as at about 10.95 inches (about 278.13 mm). Hole positions can be scaled to substrates of other sizes.
  • one or more of the through holes 510 are positioned close to the inner edge of the seal ring 206 or past the edge of the seal ring 206 and over the vacuum region 204.
  • Such misalignment causes varying leaks from the internal volume of the process chamber into the vacuum region 204 (the amount of leakage dependent upon the amount of misalignment).
  • Such variation in backside pressure readings based upon substrate position can be analyzed similar to obtain a graph similar to the plot 1006 shown in Figure 10, where increasing off set results in increased backside pressure readings.
  • a substrate 602 may include a plurality of through holes 610 disposed through a portion of the substrate corresponding to the vacuum region 204 and proximate to the location of the seal ring 206.
  • corresponding to the location of the vacuum region means that the through holes will be disposed over the vacuum region when the substrate is centered atop the substrate support.
  • proximate to the location of the seal ring means that the through holes are disclosed close enough to the seal ring such that one or more of the through holes can be disposed atop the seal ring when the substrate is disposed off-center atop the substrate support.
  • the through holes 610 are positioned along a circle having a diameter proximate to but less than the inner diameter of the seal ring (as shown in Figure 6).
  • the through holes 610 are positioned such that a diameter 614 of the through hole is completely or predominantly disposed over the vacuum region and proximate the edge of the seal ring (e.g., the inner diametral edge as shown in Figure 6) when the substrate 602 is centered on the substrate support.
  • the through holes 610 are further positioned such that one or more through holes 610 can move past the edge of the seal ring (e.g., the inner diametral edge as shown in Figure 6) to allow for reducing the leakage into the vacuum region 204 from the interior volume of the process chamber through the through hole 610 when the substrate 602 is positioned off-center on the substrate support. [0043] Accordingly, when the substrate 602 is incorrectly positioned on the substrate support, one or more of the through holes 610 are positioned partially or completely atop the seal ring 206, partially or completely blocking leakage from the internal volume of the process chamber into the vacuum region 204 through the through hole 610.
  • Figure 11 depicts an illustrative graph 1100 showing an exemplary plot 1106 of substrate transfer robot hand off offset (axis 1102) versus backside pressure (axis 1104).
  • the plot 1106 illustrates that a centered position of the substrate transfer robot hand off corresponds to the highest backside pressure measurement. Increasing offset of the substrate transfer robot in either direction results in reduced leakage and thus lower backside pressure readings. At large enough substrate transfer robot hand off offsets, the openings of the substrate moves onto the seal ring and the backside pressure will decrease rapidly, as seen by the nearly vertical portions of plot 1106.
  • a calibrated substrate position can be found by analyzing a plurality of backside pressure values to determine a substrate position having an associated backside pressure value that is a maximum value of the plurality of backside pressure values or that is within a predetermined tolerance of the maximum value of the plurality of backside pressure values.
  • the holes can be arranged in many different ways.
  • the hole location, number, and diameter may be selected to obtain a desired accuracy of substrate position.
  • Figure 7 depicts a substrate 700 including a solid disc 702 and a plurality of sets of through holes 706.
  • the substrate may also include a notch 704 or other locating feature to facilitate substrate orientation.
  • three sets of three through holes are shown, there can be greater or fewer sets of through holes and each set can have greater or fewer than three holes.
  • the through holes may be equidistantly spaced apart within each set of through holes and the plurality of sets of through holes may be equidistantly spaced apart.
  • FIG 8 depicts a substrate 800 including a solid disc 802 and an exemplary plurality of through holes 806. Sixteen equidistantly spaced holes are shown in Figure 18. Substrate 800 also depicts a locating notch 804. Providing a greater number of holes advantageously improves the positional accuracy of the calibration substrate.
  • Figure 9 depicts a substrate 900 including a solid disc 902 and an exemplary plurality of through holes 906. Four equidistantly spaced holes are shown in Figure 9. Providing fewer holes advantageously simplifies fabrication and reduces cost of the calibration substrate. Substrate 900 also depicts a locating notch 904.

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

L'invention concerne des procédés et un appareil d'étalonnage de position de substrat pour des supports de substrat dans des systèmes de traitement de substrat. Dans certains modes de réalisation, un procédé de positionnement d'un substrat sur un support de substrat comprend les étapes consistant à : obtenir une pluralité de valeurs de pression arrière correspondant à une pluralité de différentes positions de substrat sur un support de substrat par placement répété d'un substrat dans une position sur le support de substrat, et par serrage sous vide du substrat sur le support de substrat et mesure d'une pression arrière; et analyser la pluralité de valeurs de pression arrière pour déterminer une position de substrat étalonnée.
PCT/US2022/050209 2021-11-19 2022-11-17 Étalonnage de position de substrat pour supports de substrat dans des systèmes de traitement de substrat WO2023091547A1 (fr)

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Application Number Priority Date Filing Date Title
US17/530,538 2021-11-19
US17/530,538 US20220099426A1 (en) 2017-02-14 2021-11-19 Substrate position calibration for substrate supports in substrate processing systems

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WO2023091547A1 true WO2023091547A1 (fr) 2023-05-25

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Citations (6)

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