WO2023084612A1 - Temperature adjustment device and electronic component testing device - Google Patents

Temperature adjustment device and electronic component testing device Download PDF

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Publication number
WO2023084612A1
WO2023084612A1 PCT/JP2021/041221 JP2021041221W WO2023084612A1 WO 2023084612 A1 WO2023084612 A1 WO 2023084612A1 JP 2021041221 W JP2021041221 W JP 2021041221W WO 2023084612 A1 WO2023084612 A1 WO 2023084612A1
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WO
WIPO (PCT)
Prior art keywords
temperature
fluid
temperature adjustment
adjustment device
valve
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PCT/JP2021/041221
Other languages
French (fr)
Japanese (ja)
Inventor
祐也 山田
有朋 菊池
ギュンター ジェセラー
マーリン ウォルナー
Original Assignee
株式会社アドバンテスト
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 株式会社アドバンテスト filed Critical 株式会社アドバンテスト
Priority to PCT/JP2021/041221 priority Critical patent/WO2023084612A1/en
Priority to TW111138591A priority patent/TWI852121B/en
Publication of WO2023084612A1 publication Critical patent/WO2023084612A1/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer

Definitions

  • the present invention provides a temperature adjustment device for adjusting the temperature of an electronic component under test such as a semiconductor integrated circuit device (hereinafter simply referred to as "DUT" (Device Under Test)), and the temperature adjustment device.
  • the present invention relates to an electronic component testing apparatus provided with.
  • a test system that controls the temperature of the DUT under test by supplying gas (air) to the DUT (see, for example, Patent Document 1 (paragraphs [0033] to [0035], FIG. 5). ).
  • the test system includes cooling means and heating means for adjusting the temperature of the gas supplied to the DUT, the cooling means and heating means being controlled by a temperature controller. This temperature controller controls the cooling means and the heating means so as to keep the temperature of the DUT at a desired set value based on the signal indicating the measured gas temperature input from the air temperature sensor.
  • the problem to be solved by the present invention is to provide a temperature adjustment device capable of speeding up the temperature adjustment of the DUT, and an electronic component testing apparatus equipped with this temperature adjustment device.
  • a temperature adjustment device is a temperature adjustment device for adjusting the temperature of a DUT electrically connected to a socket, wherein the socket has an internal space and supplies a first fluid.
  • a first supply unit a second supply unit that supplies a second fluid having a temperature different from that of the first fluid; the first fluid supplied from the first supply unit; and a mixing section that mixes the second fluid supplied from the second supply section and supplies the mixed fluid to the internal space.
  • the first fluid is normal temperature air
  • the second fluid is a gas having a temperature higher than that of the first fluid, or a temperature higher than that of the first fluid. It may be a gas having a temperature lower than the temperature.
  • the first supply section includes a first connection section to which a first supply source for supplying the first fluid is connected, and the first connection section via the first connection section. and a first valve that regulates the flow rate of the first fluid supplied from one source.
  • the first supply unit includes a first control unit that calculates the temperature of the DUT and controls the first valve based on the result of calculating the temperature of the DUT.
  • the first control unit may control the first valve so that the first fluid is intermittently supplied.
  • the first control unit may control the first valve by PWM control.
  • the second supply unit includes a second connection unit to which a second supply source for supplying the second fluid is connected, and the second supply unit via the second connection unit. a second valve for adjusting the flow rate of the second fluid supplied from two supply sources; and the temperature of the second fluid supplied from the second supply source via the second connection. and a temperature adjustment unit that adjusts the
  • the second supply unit includes a second control unit that controls the second valve, and the second control unit is continuously supplied with the second fluid.
  • the second valve may be controlled so as to.
  • the second control unit may control the second valve by on/off control.
  • the second supply unit includes a measurement unit that measures the temperature of the second fluid on the downstream side of the temperature adjustment unit, and the temperature adjustment unit based on the measurement result of the measurement unit. and a third control unit that controls the unit.
  • the second connection includes a third connection to which a third supply source that stores liquid nitrogen and supplies nitrogen is connected, and the second valve A third valve may be included for regulating the flow of said nitrogen supplied from said third source via three connections.
  • the second connecting portion includes a fourth connecting portion to which a fourth supply source for supplying air is connected, and the second valve connects the fourth connecting portion.
  • a fourth valve that adjusts the flow rate of the air supplied from the fourth supply source through the second supply unit, the first flow path connected to the third valve;
  • a confluence section is provided where the second flow path connected to the fourth valve merges, and the second supply section includes the nitrogen supplied from the third supply source and the fourth flow path.
  • the air supplied from a supply source or a mixed fluid of the air and the nitrogen may be supplied as the second fluid.
  • the temperature adjustment section may include a heating section that heats the second fluid.
  • the mixing section may be provided in a socket guide arranged around the socket.
  • the mixing section may be provided in the socket.
  • An electronic component testing apparatus is an electronic component testing apparatus for testing a DUT, comprising a socket having an internal space, and the temperature adjustment device according to the above invention, wherein the temperature adjustment device comprises: It is an electronic component test apparatus that supplies a fluid to the internal space of the socket.
  • the socket includes contacts electrically connected to the terminals of the DUT, and a housing that holds the contacts, and the internal space is provided in the housing. , the contact may be exposed within the internal space.
  • the mixing unit mixes the first fluid with the second fluid having a temperature different from that of the first fluid, thereby speeding up the temperature adjustment of the DUT. can be planned. Further, in the temperature adjustment device according to the present invention, the mixed fluid is supplied to the socket, so the mixed fluid can be supplied to the lower portion of the DUT, which has low thermal resistance. Therefore, the temperature of the DUT can be efficiently adjusted.
  • FIG. 1 is a block diagram showing an example of the configuration of an electronic component testing apparatus according to an embodiment of the invention.
  • FIG. 2 is a cross-sectional view showing an example of the internal configuration of the chamber of the electronic device testing apparatus according to the embodiment of the present invention.
  • FIG. 3 is a cross-sectional view showing an example of the configuration of the socket and the socket guide of the electronic device testing apparatus according to the embodiment of the present invention.
  • FIG. 1 is a block diagram showing an example of the configuration of an electronic component testing apparatus according to this embodiment.
  • An electronic component testing apparatus 1 shown in FIG. 1 is an apparatus for testing the electrical characteristics of a DUT 100 such as a semiconductor integrated circuit device. This electronic component testing apparatus 1 tests whether or not the DUT 100 operates properly while applying high-temperature or low-temperature thermal stress to the DUT 100 .
  • This electronic component testing apparatus 1 includes a tester 2, a socket 3, a socket guide 4, and a handler 5.
  • Tester 2 performs tests that measure and evaluate the electrical characteristics of DUT 100 .
  • This tester 2 has a tester main frame 21 and a test head 23 connected to this tester main frame 21 via a cable 22 .
  • a socket 3 is attached to the upper surface of the test head 23, and a socket guide 4 is arranged around the socket 3. - ⁇
  • the handler 5 presses the DUT 100 against the socket 3 to electrically connect the DUT 100 and the socket 3 .
  • the DUT 100 and the test head 23 are electrically connected via the socket 3 .
  • the tester 2 inputs a signal from the tester mainframe 21 to the DUT 100 via the cable 22 and the test head 23, and measures and evaluates the output of the DUT 100 based on the input signal.
  • a SoC System on a chip
  • the DUT 100 can be exemplified as the DUT 100 to be tested, but it may also be a memory-based device, a logic-based device, or the like.
  • the DUT 100 may be a resin-molded device in which a semiconductor chip is packaged with a molding material such as a resin material, or may be an unpackaged bare die.
  • the socket 3 is replaced with one that matches the shape and number of pins of the DUT 100 .
  • the DUT 100 in this embodiment includes a temperature detection circuit 101 that detects the junction temperature.
  • the temperature detection circuit 101 in this embodiment is, for example, a circuit including a thermal diode and formed on a semiconductor substrate. Note that the temperature detection circuit 101 is not limited to a thermal diode.
  • the temperature detection circuit 101 may be configured using an element having temperature-dependent resistance characteristics or bandgap characteristics, or a thermocouple may be embedded in the DUT 100 as the temperature detection circuit 101 .
  • the handler 5 carries and presses the DUT 100 onto the socket 3.
  • This handler 5 has a contact arm 51 and a chamber 52 .
  • the contact arm 51 has an arm 511 and a pusher 512 .
  • the arm 511 has an actuator (not shown) for horizontal movement, and can move in the front, rear, left, and right (XY directions) along the rails of this actuator. Furthermore, the arm 511 also has an actuator (not shown) for vertical driving, and can move along the vertical direction (Z-axis direction).
  • a pusher 512 is provided at the tip of the arm 511 . The pusher 512 can hold the DUT 100 in contact with it by vacuum suction or the like.
  • the chamber 52 is a constant temperature bath made of a heat insulating material or the like. Since the chamber 52 is less susceptible to temperature changes from the surrounding environment, the temperature of the atmosphere inside the constant temperature bath can be kept constant.
  • the upper part of the test head 23 enters this chamber 52 through an opening, and the socket 3 is arranged in the chamber 52 .
  • the DUT 100 is transported above the socket 3 located within the chamber 52 by horizontally moving the arm 511 while being held by the pusher 512 .
  • the DUT 100 is pressed against the socket 3 by lowering the arm 511 .
  • the pusher 512 is positioned within the chamber 52 .
  • This handler 5 is equipped with a temperature control system 11.
  • This temperature control system 11 comprises a socket temperature control device 6 and a chamber temperature control device 9 .
  • the socket temperature adjustment device 6 is a device that adjusts the temperature of the DUT 100 by supplying temperature-controlled fluid to the internal space 34 of the socket 3 .
  • the socket temperature adjustment device 6 and the chamber temperature adjustment device 9 may constitute a part of the handler 5 as in this embodiment, or may be separate from the handler 5 .
  • the socket temperature adjustment device 6 in this embodiment includes a continuous flow supply section 7, a pulse flow supply section 8, and a mixing section 10.
  • the continuous flow supply unit 7 is a mechanism that continuously supplies the mixing unit 10 with a heated fluid composed of a coolant or a warm medium that has been heated and temperature-controlled. Hot media and coolant are used to adjust the temperature of the DUT 90 . Hot fluid is used in the high temperature test to test whether the DUT 100 operates properly at high temperatures, and conversely, cold fluid is used in the low temperature test to test whether the DUT 100 operates properly at low temperatures.
  • the hot medium or the coolant is supplied to the socket 3, it is preferable to use gas as the hot medium and the coolant in order to protect the socket and the board of the test head.
  • gases are less likely to cause the problems of freezing and boiling unlike liquids, a wide temperature reachable range can be secured.
  • a case where low-temperature gaseous nitrogen is used as a refrigerant and high-temperature air is used as a heating medium will be exemplified.
  • the continuous flow supply section 7 includes a plurality of connection sections 71a and 71b, flow paths P 1 to P 5 , a plurality of valves 72a 1 , 72a 2 and 72b, a continuous flow control section 73, a heat exchanger 74, It has a channel heater 75 , a heater control section 76 and a temperature sensor 77 .
  • the connecting portion 71a is connected to an LN 2 (liquid nitrogen) supply source 200 that stores liquid nitrogen and supplies low-temperature nitrogen.
  • the LN 2 supply source 200 includes, for example, a pressure vessel that stores liquid nitrogen at high pressure, or a connection port with a liquid nitrogen supply pipeline in the factory. and/or liquid nitrogen can be delivered.
  • a bifurcated flow path P1 is connected to the connecting portion 71a, and the branched flow path P1 is connected to the junction J and the chamber 52, respectively.
  • the branched flow path P 1 is provided with valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen supplied from the LN 2 supply source 200 .
  • the valve 72 a 1 adjusts the flow rate of nitrogen supplied to the junction J, while the valve 72 a 2 adjusts the flow rate of nitrogen supplied to the interior of the chamber 52 .
  • the connecting portion 71b is connected to an air supply source 300 that supplies normal temperature air.
  • the air supply source 300 includes, for example, a pump that supplies outside air to the connecting portion 71b.
  • As the air supply source 300 an existing factory pipe or the like may be used.
  • the connecting portion 71b is connected to the flow path P2 , and the downstream side of the flow path P2 merges with the flow path P1 at the junction J.
  • a valve 72b for adjusting the flow rate of the air supplied from the air supply source 300 is provided in the flow path P2 .
  • the continuous flow control unit 73 controls the opening and closing of the valves 72a 1 , 72a 2 and 72b.
  • the continuous flow control unit 73 opens the valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen and keeps the valve 72b for adjusting the flow rate of air closed when performing the low temperature test of the DUT 100 . That is, the continuous flow control section 73 controls the valves 72a 1 and 72a 2 so that nitrogen as a refrigerant is continuously supplied during the low temperature test.
  • the valve 72b for adjusting the flow rate of air is opened, and the valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen are kept closed. That is, the continuous flow control section 73 controls the valve 72b so that air is continuously supplied during execution of the high temperature test.
  • FIG. 2 is a side view showing an example of the internal configuration of the chamber 52 of the electronic device testing apparatus 1 according to this embodiment.
  • the flow path P3 is connected to the junction J, and the downstream side of the flow path P3 is connected to the heat exchanger 74 inside the chamber 52 .
  • the heat exchanger 74 is provided inside the chamber 52 and exchanges heat between the fluid supplied from the flow path P3 and the atmosphere inside the chamber 52 .
  • the heat exchanger 74 has a body portion 741 and a plurality of fins 742 formed on the body portion 741 .
  • a channel P4 through which the fluid supplied from the channel P3 flows is formed inside the body portion 741 .
  • the flow path P4 extends from one end of the body portion 741 to the other end, and has a meandering linear shape so as to increase the contact area with the body portion 741 .
  • the fins 742 are provided so as to be exposed to the interior of the chamber 52 , and the fins 742 increase the surface area of the heat exchanger 74 , so that the fluid flowing through the flow path P 4 and the Heat exchange with the atmosphere can be efficiently performed.
  • the temperature of the atmosphere inside the chamber 52 is adjusted to high or low temperature by the chamber temperature adjustment device 9 .
  • the chamber temperature control device 9 has the connecting portion 71a, the valve 72a 2 , the flow path P1 , the nitrogen supply port 91, the chamber heater 92, and the fan 93. . That is, in the present embodiment, the socket temperature adjustment device 6 and the chamber temperature adjustment device 9 share a part of the flow path P1 , the connecting portion 71a, and the valve 72a2 .
  • the nitrogen supply port 91 is connected to the connecting portion 71a via the flow path P1 .
  • the nitrogen supply port 91 reduces the temperature of the atmosphere in the chamber 52 by supplying low temperature nitrogen supplied from the LN 2 supply source 200 into the chamber 52 .
  • the chamber heater 92 heats the atmosphere inside the chamber 52 to raise the temperature of the atmosphere.
  • the fan 93 efficiently changes the temperature of the atmosphere by circulating the atmosphere in the chamber 52 by blowing air.
  • the fan 93 is provided upstream of the heat exchanger 74 in the flow of the circulating atmosphere, and can blow air to the heat exchanger 74 .
  • the heater 92 is positioned upstream of the heat exchanger 74 and downstream of the fan 93 .
  • the nitrogen supply port 91 is positioned upstream of the heat exchanger 74 and downstream of the fan 93 .
  • the chamber temperature adjustment device 9 When conducting a low-temperature test of the DUT 100, the chamber temperature adjustment device 9 supplies low-temperature nitrogen from the nitrogen supply port 91 into the chamber 52 while blowing air with the fan 93, thereby reducing the temperature of the atmosphere in the chamber 52 to the target temperature ( Target Temperature). If the temperature of the atmosphere becomes lower than the target temperature, the atmosphere may be heated by the heater 92 as necessary.
  • the LN 2 supply source 200 supplies LN 2 to the socket temperature adjustment device 6 during the low temperature test.
  • the set temperature of the atmosphere in the chamber during the low-temperature test is usually higher than the temperature of the nitrogen flowing through the flow path P4 . heated.
  • the chamber temperature adjustment device 9 When conducting a high-temperature test of the DUT 100, the chamber temperature adjustment device 9 causes the heater 92 to raise the temperature of the atmosphere in the chamber 52 to the target temperature while blowing air with the fan 93.
  • the temperature of the atmosphere in the chamber 52 is set higher than the temperature of the fluid flowing through the flow path P4 in both the low temperature test and the high temperature test. Fluid flowing through path P4 is heated.
  • the amount of fluid heated by the flow path heater 75 can be reduced.
  • a flow path P5 is connected to the downstream side of the flow path P4 .
  • a channel heater 75 is provided in the channel P5 .
  • the channel heater 75 heats the fluid flowing through the channel P5 .
  • a heater with a low output can be used as the flow path heater 75 .
  • the heater control unit 76 feedback-controls the flow path heater 75 . Specifically, the heater control unit 76 calculates a temperature measurement value and a target temperature (Target Temperature) based on the temperature measurement value of a temperature sensor 77 provided downstream of the flow path heater 75 in the flow path P5 .
  • the output of the channel heater 75 is PID-controlled so as to reduce the deviation of .
  • the target temperature of the fluid is not particularly limited. The temperature may be about 20° C. lower than the set temperature, which is the target temperature.
  • the mixing section 10 is connected to the downstream side of the flow path P5 , and the heated fluid heated by the flow path heater 75 is supplied to the mixing section 10.
  • the pulse flow supply unit 8 is a mechanism that intermittently supplies room temperature fluid made of room temperature compressed dry air to the mixing unit 10 .
  • the pulse flow supply section 8 instantaneously changes the temperature of the heating fluid supplied from the continuous flow supply section 7 to the mixing section 10 by means of normal temperature compressed dry air.
  • the pulse flow supply section 8 has a connection section 81 , a valve 82 and a pulse flow control section 83 .
  • the connecting portion 81 is connected to a CDA (Compressed Dry Air) supply source 400 that supplies compressed dry air.
  • the CDA source 400 may, for example, include a compressor to take in and compress ambient air and a dryer to dry the compressed air.
  • the CDA supply source 400 may be existing factory piping or the like capable of supplying compressed dry air.
  • the fluid supplied by the pulse flow supply unit 8 is mixed with low-temperature nitrogen or the like supplied from the continuous flow supply unit 7 in the mixing unit 10, so compressed dry air with a low dew point temperature is used to prevent condensation. is preferred.
  • the dew point temperature of compressed dry air under atmospheric pressure is preferably ⁇ 70° C. or lower.
  • the connecting portion 81 is connected to the flow path P6 , and the downstream side of the flow path P6 is connected to the mixing section 10.
  • a valve 82 for adjusting the flow rate of the compressed dry air supplied from the CDA supply source 400 is also provided in the flow path P6 .
  • a valve for normal temperature having a high frequency can be used as the valve 82, so that the flow rate of the compressed dry air can be controlled at high speed.
  • a pulse flow controller 83 PWM-controls the valve 82 so that compressed dry air is intermittently supplied.
  • This pulse flow control section 83 calculates the junction temperature Tj of the DUT 100 based on the signal input from the temperature detection circuit 101 of the DUT 100 . Then, the pulse flow control unit 83 controls the valve 82 so that the difference between the calculated result of the junction temperature and the target temperature of the DUT 100 becomes small, thereby controlling the flow rate of the compressed dry air supplied to the flow path P6 . .
  • Specific examples of control using the junction temperature at this time include U.S. Patent Application No. 15/719,849 (U.S. Patent Application Publication No. 2019/0101587), U.S. Patent Application No. 16/351,363 (U.S.
  • Patent Application Publication No. 2020/0033402 U.S. Patent Application No. 16/575,460 (U.S. Patent Application Publication No. 2020/0241582), and U.S. Patent Application No. 16/575,470 (U.S. Patent Application Publication No. 2020/0241040) can be exemplified.
  • FIG. 3 is a cross-sectional view showing an example of the configuration near the socket of the electronic device testing apparatus according to the present embodiment.
  • the mixing section 10 in this embodiment is provided in the socket guide 4 .
  • the mixing section 10 is a member having a hollow, and includes a flow path P7 connected to the flow path P5 of the continuous flow supply section 7 and a flow path P6 connected to the pulse flow supply section 8. 8 are formed inside.
  • One end of the flow path P8 is connected to the flow path P7 , and the fluid supplied from the continuous flow supply section 7 and the fluid supplied from the pulse flow supply section 8 are mixed at this connection portion. be.
  • the channel P7 of the mixing section 10 is connected to the channel P9 formed inside the socket guide 4 .
  • the channel P9 is connected to the internal space 34 of the socket 3, and the mixed fluid from the mixing section 10 is supplied to the internal space 34 via the channel P9.
  • the passage P10 of the socket guide 4 is connected to the internal space 34, and the mixed fluid that has passed through the internal space 34 is discharged from the passage P10 . Since the mixed fluid in this embodiment is gaseous, it is not necessary to recover the exhausted mixed fluid.
  • the socket 3 in this embodiment has a housing 31, a plurality of contacts 32, a coil spring 33, and an internal space 34.
  • This housing 31 has a base member 311 and a top plate 312 .
  • a base member 311 is provided on the test head 23 .
  • This base member 311 has a plurality of first holding holes 311a.
  • the top plate 312 is movably supported along the pressing direction of the DUT 100 by a coil spring 33 provided on the base member 311 .
  • the top plate 312 is separated from the base member 311 , thereby forming an internal space 34 between the base member 311 and the top plate 312 .
  • the top plate 312 has a plurality of second holding holes 312a provided to face the first holding holes 311a.
  • the contacts 32 are held in the first and second holding holes 311a and 312a.
  • the contactor 32 is made of metal or the like, and contacts the terminal 102 of the DUT 100 in the second holding hole 312a. Thereby, the DUT 100 and the test head 23 are electrically connected.
  • a part of the contactor 32 is exposed to the internal space 34 and comes into contact with the mixed fluid supplied to the internal space 34 . Since the contactor 32 has high thermal conductivity, it functions as a heat sink. The mixed fluid supplied to the internal space 34 exchanges heat with the DUT 100 via the contactor 32 to adjust the temperature of the DUT 100 .
  • the electronic device testing apparatus 1 performs temperature adjustment as follows when performing a low-temperature test.
  • the continuous flow control unit 73 opens the valves 72a 1 and 72a 2 and maintains the valves 72a 1 and 72a 2 in an open state, so that low temperature nitrogen is continuously supplied to the chamber 52 and the heat exchanger 74.
  • the temperature of the nitrogen in the flow path P5 is set to a temperature about 20° C. lower than the set value. , are heated by the channel heater 75 .
  • the nitrogen heated by a channel heater 75 is continuously supplied to the mixing section 10 .
  • the pulse flow control section 83 repeats opening and closing of the valve 82 by the above-described PWM control to intermittently supply compressed dry air to the mixing section 10 .
  • Compressed dry air is mixed with nitrogen in the mixing unit 10 to raise the temperature of the mixed fluid and produce a mixed fluid whose temperature is adjusted to around the set temperature.
  • the valve 82 is frequently opened and closed by the PWM control by the pulse flow control unit 83, the temperature of the mixed fluid supplied to the socket 3 can be precisely controlled.
  • the electronic device testing apparatus 1 in this embodiment performs temperature adjustment as follows.
  • the continuous flow control unit 73 opens the valve 72 b and maintains the valve 72 b in an open state, so that room temperature air is continuously supplied to the heat exchanger 74 .
  • the atmosphere in the chamber 52 is heated by the chamber heater 92 .
  • the temperature of the air in the flow path P5 is adjusted to a temperature about 20° C. higher than the set value. , are heated by the channel heater 75 .
  • the air heated by the flow path heater 75 is continuously supplied to the mixing section 10 .
  • the pulse flow control section 83 repeats opening and closing of the valve 82 by the above-described PWM control to intermittently supply compressed dry air to the mixing section 10 .
  • Compressed dry air is mixed with heated air in the mixing unit 10 to lower the temperature of the mixed fluid and produce a mixed fluid whose temperature is adjusted to around the set temperature.
  • the PWM control by the pulse flow control unit 83 frequently repeats the opening and closing of the valve 82, so the temperature of the mixed fluid supplied to the socket 3 can be precisely controlled.
  • a normal temperature fluid such as normal temperature compressed dry air is mixed with a heated fluid such as low temperature gaseous nitrogen or heated air.
  • a heated fluid such as low temperature gaseous nitrogen or heated air.
  • the mixed fluid is supplied to the socket 3, so the mixed fluid can be supplied to the lower portion of the DUT 100 with low thermal resistance. Therefore, the temperature of the DUT can be efficiently adjusted.
  • the semiconductor chip is covered with a resin mold having a large thermal resistance, so the temperature of the semiconductor chip cannot be adjusted efficiently even if the temperature is applied from the resin mold side (upper side). By applying the temperature from below through the inner space of the socket 3, the temperature of the semiconductor chip can be efficiently adjusted.
  • the contactor 32 with a small heat capacity and high heat conductivity is used as a heat sink to exchange heat between the mixed fluid and the DUT 100, so the temperature of the DUT 100 can be efficiently adjusted.
  • the temperature adjustment may not be able to follow the rapid temperature change of the DUT. If there is, it is possible to switch the temperature of the mixed fluid used for temperature adjustment at high speed, so that rapid temperature changes of the DUT 100 can be followed.
  • the mixing section 10 near the socket 3
  • the flow path to reach the internal space 34 is shortened, so that the influence of heat resistance received from the flow path of the mixed fluid can be reduced. Therefore, the accuracy of temperature adjustment can be improved.
  • the number of temperature adjustment devices will increase.
  • the temperature of the DUT 100 is adjusted with the minimum number of temperature adjustment devices 6. It can be performed.
  • cold nitrogen supplied from the LN2 source 200 and air supplied from the air source 300 are not used simultaneously as heating fluids, but are limited to this.
  • a mixed fluid in which both are mixed may be used as the heating fluid.
  • the fluid is heated in the socket temperature adjustment device 6 and then supplied to the mixing section 10, but the present invention is not limited to this.
  • the fluid may be cooled by making the temperature of the atmosphere inside the chamber 54 lower than the temperature of the fluid flowing through the flow path P4 of the heat exchanger 74 according to the set temperature during the test.
  • the fluid may be cooled by providing a cooler instead of the flow path heater 75 .
  • the mixing section 10 is provided in the socket guide, but it is not limited to this.
  • the mixing section 10 may be provided in a socket.
  • Pulse flow controller 9 Chamber temperature adjustment device 91... Nitrogen supply port 92... Fan 93... Chamber heater 10... Mixing part 11... Temperature adjustment system P1 to P10 ... Flow path J... Merging part 100... DUTs 101... Temperature detection circuit 102... Terminal 200... LN 2 supply source 300... Air supply source 400... CDA supply source

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Abstract

This temperature adjustment device 6 comprises: a continuous flow supply unit 7 for supplying a first fluid; a pulse flow supply unit 8 for supplying a second fluid that has a different temperature than the first fluid; and a mixing unit 9 for mixing the first fluid supplied from the continuous flow supply unit 7 and the second fluid supplied from the pulse flow supply unit 8, and supplying the resultant mixed fluid to an internal space 34 in a socket 3.

Description

温度調整装置及び電子部品試験装置Temperature control device and electronic component test device
　本発明は、半導体集積回路素子等の被試験電子部品（以下、単に「ＤＵＴ」（Device Under Test）と称する。）の試験においてＤＵＴの温度を調整する温度調整装置、及び、この温度調整装置を備える電子部品試験装置に関するものである。 The present invention provides a temperature adjustment device for adjusting the temperature of an electronic component under test such as a semiconductor integrated circuit device (hereinafter simply referred to as "DUT" (Device Under Test)), and the temperature adjustment device. The present invention relates to an electronic component testing apparatus provided with.
　ＤＵＴに対して気体（空気）を供給することにより試験中のＤＵＴの温度を制御する試験システムが知られている（例えば、特許文献１（段落［００３３］～［００３５］、第５図）参照）。この試験システムは、ＤＵＴに供給される気体の温度を調整する冷却手段及び加熱手段を備えており、冷却手段及び加熱手段は温度コントローラにより制御されている。この温度コントローラは、空気温度センサから入力される気体の温度の計測値を示す信号に基づいて、ＤＵＴの温度を所望の設定値に保つように冷却手段及び加熱手段を制御している。 A test system is known that controls the temperature of the DUT under test by supplying gas (air) to the DUT (see, for example, Patent Document 1 (paragraphs [0033] to [0035], FIG. 5). ). The test system includes cooling means and heating means for adjusting the temperature of the gas supplied to the DUT, the cooling means and heating means being controlled by a temperature controller. This temperature controller controls the cooling means and the heating means so as to keep the temperature of the DUT at a desired set value based on the signal indicating the measured gas temperature input from the air temperature sensor.
特開２００４－５０３９２４号公報JP 2004-503924 A
　しかしながら、上記のような試験システムでは、気体の流路などの熱抵抗により、気体の温度調整の高速化が困難であり、ＤＵＴの温度調整が急激な温度変化に追従できない場合がある、という問題がある。 However, in the test system as described above, it is difficult to adjust the temperature of the gas at high speed due to the thermal resistance of the gas flow path, etc., and the temperature adjustment of the DUT may not be able to follow rapid temperature changes. There is
　本発明が解決しようとする課題は、ＤＵＴの温度調整の高速化を図ることができる温度調整装置、及び、この温度調整装置を備えた電子部品試験装置を提供することである。 The problem to be solved by the present invention is to provide a temperature adjustment device capable of speeding up the temperature adjustment of the DUT, and an electronic component testing apparatus equipped with this temperature adjustment device.
　［１］本発明に係る温度調整装置は、ソケットに電気的に接続されるＤＵＴの温度を調整する温度調整装置であって、前記ソケットは、内部空間を有し、第１の流体を供給する第１の供給部と、前記第１の流体の温度と異なる温度を有する第２の流体を供給する第２の供給部と、前記第１の供給部から供給された第１の流体と、前記第２の供給部から供給された前記第２の流体とを混合して、混合流体を前記内部空間に供給する混合部と、を備えた温度調整装置である。 [1] A temperature adjustment device according to the present invention is a temperature adjustment device for adjusting the temperature of a DUT electrically connected to a socket, wherein the socket has an internal space and supplies a first fluid. a first supply unit; a second supply unit that supplies a second fluid having a temperature different from that of the first fluid; the first fluid supplied from the first supply unit; and a mixing section that mixes the second fluid supplied from the second supply section and supplies the mixed fluid to the internal space.
　［２］上記発明において、前記第１の流体は、常温の空気であり、前記第２の流体は、前記第１の流体の温度よりも高い温度を有する気体、又は、前記第１の流体の温度よりも低い温度を有する気体であってもよい。 [2] In the above invention, the first fluid is normal temperature air, and the second fluid is a gas having a temperature higher than that of the first fluid, or a temperature higher than that of the first fluid. It may be a gas having a temperature lower than the temperature.
　［３］上記発明において、前記第１の供給部は、前記第１の流体を供給する第１の供給源が接続される第１の接続部と、前記第１の接続部を介して前記第１の供給源から供給された前記第１の流体の流量を調整する第１のバルブと、を備えていてもよい。 [3] In the above invention, the first supply section includes a first connection section to which a first supply source for supplying the first fluid is connected, and the first connection section via the first connection section. and a first valve that regulates the flow rate of the first fluid supplied from one source.
　［４］上記発明において、前記第１の供給部は、前記ＤＵＴの温度を算出し、前記ＤＵＴの温度の算出結果に基づいて、前記第１のバルブを制御する第１の制御部を備えていてもよい。 [4] In the above invention, the first supply unit includes a first control unit that calculates the temperature of the DUT and controls the first valve based on the result of calculating the temperature of the DUT. may
　［５］上記発明において、前記第１の制御部は、前記第１の流体が断続的に供給されるように、前記第１のバルブを制御してもよい。 [5] In the above invention, the first control unit may control the first valve so that the first fluid is intermittently supplied.
　［６］上記発明において、前記第１の制御部は、ＰＷＭ制御により前記第１のバルブを制御してもよい。 [6] In the above invention, the first control unit may control the first valve by PWM control.
　［７］上記発明において、前記第２の供給部は、前記第２の流体を供給する第２の供給源が接続される第２の接続部と、前記第２の接続部を介して前記第２の供給源から供給された前記第２の流体の流量を調整する第２のバルブと、前記第２の接続部を介して前記第２の供給源から供給された前記第２の流体の温度を調整する温度調整部と、を備えていてもよい。 [7] In the above invention, the second supply unit includes a second connection unit to which a second supply source for supplying the second fluid is connected, and the second supply unit via the second connection unit. a second valve for adjusting the flow rate of the second fluid supplied from two supply sources; and the temperature of the second fluid supplied from the second supply source via the second connection. and a temperature adjustment unit that adjusts the
　［８］上記発明において、前記第２の供給部は、前記第２のバルブを制御する第２の制御部を備え、前記第２の制御部は、前記第２の流体が連続的に供給されるように、前記第２のバルブを制御してもよい。 [8] In the above invention, the second supply unit includes a second control unit that controls the second valve, and the second control unit is continuously supplied with the second fluid. The second valve may be controlled so as to.
　［９］上記発明において、前記第２の制御部は、オンオフ制御により前記第２のバルブを制御してもよい。 [9] In the above invention, the second control unit may control the second valve by on/off control.
　［１０］上記発明において、前記第２の供給部は、前記温度調整部の下流側で前記第２の流体の温度を測定する測定部と、前記測定部の測定結果に基づいて、前記温度調整部を制御する第３の制御部と、を備えていてもよい。 [10] In the above invention, the second supply unit includes a measurement unit that measures the temperature of the second fluid on the downstream side of the temperature adjustment unit, and the temperature adjustment unit based on the measurement result of the measurement unit. and a third control unit that controls the unit.
　［１１］上記発明において、前記第２の接続部は、液体窒素を貯留し窒素を供給する第３の供給源が接続される第３の接続部を含み、前記第２のバルブは、前記第３の接続部を介して前記第３の供給源から供給された前記窒素の流量を調整する第３のバルブを含んでいてもよい。 [11] In the above invention, the second connection includes a third connection to which a third supply source that stores liquid nitrogen and supplies nitrogen is connected, and the second valve A third valve may be included for regulating the flow of said nitrogen supplied from said third source via three connections.
　［１２］上記発明において、前記第２の接続部は、空気を供給する第４の供給源が接続される第４の接続部を含み、前記第２のバルブは、前記第４の接続部を介して前記第４の供給源から供給された前記空気の流量を調整する第４のバルブを含み、前記第２の供給部は、前記第３のバルブに接続された第１の流路と、前記第４のバルブに接続された第２の流路とが合流する合流部を備えており、前記第２の供給部は、前記第３の供給源から供給された前記窒素、前記第４の供給源から供給された前記空気、又は、前記空気及び前記窒素の混合流体を、前記第２の流体として供給してもよい。 [12] In the above invention, the second connecting portion includes a fourth connecting portion to which a fourth supply source for supplying air is connected, and the second valve connects the fourth connecting portion. a fourth valve that adjusts the flow rate of the air supplied from the fourth supply source through the second supply unit, the first flow path connected to the third valve; A confluence section is provided where the second flow path connected to the fourth valve merges, and the second supply section includes the nitrogen supplied from the third supply source and the fourth flow path. The air supplied from a supply source or a mixed fluid of the air and the nitrogen may be supplied as the second fluid.
　［１３］上記発明において、前記温度調整部は、前記第２の流体を加熱する加熱部を含んでいてもよい。 [13] In the above invention, the temperature adjustment section may include a heating section that heats the second fluid.
　［１４］上記発明において、前記混合部は、前記ソケットの周囲に配置されたソケットガイドに設けられていてもよい。 [14] In the above invention, the mixing section may be provided in a socket guide arranged around the socket.
　［１５］上記発明において、前記混合部は、前記ソケットに設けられていてもよい。 [15] In the above invention, the mixing section may be provided in the socket.
　［１６］本発明に係る電子部品試験装置は、ＤＵＴを試験する電子部品試験装置であって、内部空間を有するソケットと、上記発明に係る温度調整装置と、を備え、前記温度調整装置は、前記ソケットの前記内部空間に流体を供給する電子部品試験装置である。 [16] An electronic component testing apparatus according to the present invention is an electronic component testing apparatus for testing a DUT, comprising a socket having an internal space, and the temperature adjustment device according to the above invention, wherein the temperature adjustment device comprises: It is an electronic component test apparatus that supplies a fluid to the internal space of the socket.
　［１７］上記発明において、前記ソケットは、前記ＤＵＴの端子に電気的に接続される接触子と、前記接触子を保持するハウジングと、を備え、前記内部空間は、前記ハウジングに設けられており、前記接触子は、前記内部空間内で露出していてもよい。 [17] In the above invention, the socket includes contacts electrically connected to the terminals of the DUT, and a housing that holds the contacts, and the internal space is provided in the housing. , the contact may be exposed within the internal space.
　本発明に係る温度調整装置では、混合部が、第１の流体に対して、第１の流体の温度と異なる温度を有する第２の流体を混合することにより、ＤＵＴの温度調整の高速化を図ることができる。また、本発明に係る温度調整装置では、ソケットに混合流体が供給されるため、熱抵抗の小さいＤＵＴの下部に混合流体を供給することができる。よって、ＤＵＴを効率的に温度調整することができる。 In the temperature adjustment device according to the present invention, the mixing unit mixes the first fluid with the second fluid having a temperature different from that of the first fluid, thereby speeding up the temperature adjustment of the DUT. can be planned. Further, in the temperature adjustment device according to the present invention, the mixed fluid is supplied to the socket, so the mixed fluid can be supplied to the lower portion of the DUT, which has low thermal resistance. Therefore, the temperature of the DUT can be efficiently adjusted.
図１は、本発明の実施形態における電子部品試験装置の構成の一例を示すブロック図である。FIG. 1 is a block diagram showing an example of the configuration of an electronic component testing apparatus according to an embodiment of the invention. 図２は、本発明の実施形態における電子部品試験装置のチャンバ内部の構成の一例を示す断面図である。FIG. 2 is a cross-sectional view showing an example of the internal configuration of the chamber of the electronic device testing apparatus according to the embodiment of the present invention. 図３は、本発明の実施形態における電子部品試験装置のソケット及びソケットガイドの構成の一例を示す断面図である。FIG. 3 is a cross-sectional view showing an example of the configuration of the socket and the socket guide of the electronic device testing apparatus according to the embodiment of the present invention.
　以下、本発明の実施形態を図面に基づいて説明する。図１は、本実施形態における電子部品試験装置の構成の一例を示すブロック図である。 Hereinafter, embodiments of the present invention will be described based on the drawings. FIG. 1 is a block diagram showing an example of the configuration of an electronic component testing apparatus according to this embodiment.
　図１に示す電子部品試験装置１は、半導体集積回路素子等のＤＵＴ１００の電気的特性を試験する装置である。この電子部品試験装置１は、高温又は低温の熱ストレスをＤＵＴ１００に印加しながら、ＤＵＴ１００が適切に動作するか否かを試験する。 An electronic component testing apparatus 1 shown in FIG. 1 is an apparatus for testing the electrical characteristics of a DUT 100 such as a semiconductor integrated circuit device. This electronic component testing apparatus 1 tests whether or not the DUT 100 operates properly while applying high-temperature or low-temperature thermal stress to the DUT 100 .
　この電子部品試験装置１は、テスタ２と、ソケット３と、ソケットガイド４と、ハンドラ５と、を備えている。テスタ２は、ＤＵＴ１００の電気的特性を測定及び評価する試験を実行する。このテスタ２は、テスタメインフレーム２１と、このテスタメインフレーム２１にケーブル２２を介して接続されたテストヘッド２３と、を有している。テストヘッド２３の上面にはソケット３が装着されており、このソケット３の周囲にソケットガイド４が配置されている。 This electronic component testing apparatus 1 includes a tester 2, a socket 3, a socket guide 4, and a handler 5. Tester 2 performs tests that measure and evaluate the electrical characteristics of DUT 100 . This tester 2 has a tester main frame 21 and a test head 23 connected to this tester main frame 21 via a cable 22 . A socket 3 is attached to the upper surface of the test head 23, and a socket guide 4 is arranged around the socket 3. - 特許庁
　ハンドラ５は、ソケット３にＤＵＴ１００を押し付け、ＤＵＴ１００とソケット３とを電気的に接続させる。これにより、ソケット３を介してＤＵＴ１００とテストヘッド２３とが電気的に接続される。そして、テスタ２は、テスタメインフレーム２１から、ケーブル２２及びテストヘッド２３を介してＤＵＴ１００に信号を入力し、入力された信号に基づくＤＵＴ１００の出力を測定及び評価する。 The handler 5 presses the DUT 100 against the socket 3 to electrically connect the DUT 100 and the socket 3 . Thereby, the DUT 100 and the test head 23 are electrically connected via the socket 3 . The tester 2 inputs a signal from the tester mainframe 21 to the DUT 100 via the cable 22 and the test head 23, and measures and evaluates the output of the DUT 100 based on the input signal.
　試験対象のＤＵＴ１００としては、ＳｏＣ（System on a chip）を例示することができるが、メモリ系のデバイスやロジック系のデバイス等であってもよい。また、ＤＵＴ１００は、樹脂材料等のモールド材で半導体チップをパッケージングした樹脂モールドデバイスであってよいし、パッケージングされていないベアダイであってもよい。なお、ソケット３は、ＤＵＴ１００の品種交換の際に、ＤＵＴ１００の形状やピン数などに適合するものに交換される。 A SoC (System on a chip) can be exemplified as the DUT 100 to be tested, but it may also be a memory-based device, a logic-based device, or the like. Also, the DUT 100 may be a resin-molded device in which a semiconductor chip is packaged with a molding material such as a resin material, or may be an unpackaged bare die. When the DUT 100 is changed, the socket 3 is replaced with one that matches the shape and number of pins of the DUT 100 .
　また、本実施形態におけるＤＵＴ１００は、ジャンクション温度を検出する温度検出回路１０１を備えている。本実施形態における温度検出回路１０１は、例えば、サーマルダイオードを含む回路であり、半導体基板に形成されている。なお、温度検出回路１０１は、サーマルダイオードに限定されない。例えば、温度に依存した抵抗特性やバンドギャップ特性を有する素子を用いて温度検出回路１０１を構成してもよいし、或いは、温度検出回路１０１として、熱電対をＤＵＴ１００に埋設してもよい。 Also, the DUT 100 in this embodiment includes a temperature detection circuit 101 that detects the junction temperature. The temperature detection circuit 101 in this embodiment is, for example, a circuit including a thermal diode and formed on a semiconductor substrate. Note that the temperature detection circuit 101 is not limited to a thermal diode. For example, the temperature detection circuit 101 may be configured using an element having temperature-dependent resistance characteristics or bandgap characteristics, or a thermocouple may be embedded in the DUT 100 as the temperature detection circuit 101 .
　ハンドラ５は、ＤＵＴ１００をソケット３に搬送し押し付ける。このハンドラ５は、コンタクトアーム５１と、チャンバ５２と、を有している。コンタクトアーム５１は、アーム５１１と、プッシャ５１２と、を備えている。アーム５１１は、水平移動用のアクチュエータ（不図示）を備えており、このアクチュエータのレールに従って前後左右（ＸＹ方向）に沿って移動することができる。さらに、アーム５１１は、上下駆動用のアクチュエータ（不図示）も備えており、上下方向（Ｚ軸方向）に沿って移動することができる。プッシャ５１２は、アーム５１１の先端に設けられている。このプッシャ５１２は、真空吸着等によりＤＵＴ１００を接触保持することができる。 The handler 5 carries and presses the DUT 100 onto the socket 3. This handler 5 has a contact arm 51 and a chamber 52 . The contact arm 51 has an arm 511 and a pusher 512 . The arm 511 has an actuator (not shown) for horizontal movement, and can move in the front, rear, left, and right (XY directions) along the rails of this actuator. Furthermore, the arm 511 also has an actuator (not shown) for vertical driving, and can move along the vertical direction (Z-axis direction). A pusher 512 is provided at the tip of the arm 511 . The pusher 512 can hold the DUT 100 in contact with it by vacuum suction or the like.
　チャンバ５２は、断熱材料等から構成された恒温槽である。このチャンバ５２は、周辺環境からの温度変化の影響を受け難いため、恒温槽の内部の雰囲気の温度を一定に保つことができる。テストヘッド２３の上部は、開口を介してこのチャンバ５２内に入り込んでおり、ソケット３はチャンバ５２内に配置されている。 The chamber 52 is a constant temperature bath made of a heat insulating material or the like. Since the chamber 52 is less susceptible to temperature changes from the surrounding environment, the temperature of the atmosphere inside the constant temperature bath can be kept constant. The upper part of the test head 23 enters this chamber 52 through an opening, and the socket 3 is arranged in the chamber 52 .
　このハンドラ５では、ＤＵＴ１００は、プッシャ５１２に保持された状態でアーム５１１が水平移動することにより、チャンバ５２内に位置するソケット３の上方に搬送される。次に、アーム５１１が下降することにより、ソケット３にＤＵＴ１００が押し付けられる。この際、プッシャ５１２はチャンバ５２内に位置している。 In this handler 5 , the DUT 100 is transported above the socket 3 located within the chamber 52 by horizontally moving the arm 511 while being held by the pusher 512 . Next, the DUT 100 is pressed against the socket 3 by lowering the arm 511 . At this time, the pusher 512 is positioned within the chamber 52 .
　このハンドラ５は、温度調整システム１１を備えている。この温度調整システム１１は、ソケット温度調整装置６と、チャンバ温度調整装置９と、を備えている。ソケット温度調整装置６は、ソケット３の内部空間３４に、温度調整された流体を供給することにより、ＤＵＴ１００の温度調整を行う装置である。ソケット温度調整装置６及びチャンバ温度調整装置９は、本実施形態のようにハンドラ５の一部を構成していてもよいし、或いは、ハンドラ５とは別体であってもよい。 This handler 5 is equipped with a temperature control system 11. This temperature control system 11 comprises a socket temperature control device 6 and a chamber temperature control device 9 . The socket temperature adjustment device 6 is a device that adjusts the temperature of the DUT 100 by supplying temperature-controlled fluid to the internal space 34 of the socket 3 . The socket temperature adjustment device 6 and the chamber temperature adjustment device 9 may constitute a part of the handler 5 as in this embodiment, or may be separate from the handler 5 .
　本実施形態におけるソケット温度調整装置６は、連続フロー供給部７と、パルスフロー供給部８と、混合部１０と、を備えている。 The socket temperature adjustment device 6 in this embodiment includes a continuous flow supply section 7, a pulse flow supply section 8, and a mixing section 10.
　連続フロー供給部７は、加熱されて温度調整された冷媒又は温媒から成る加熱流体を混合部１０に連続的に供給する機構である。温媒及び冷媒は、ＤＵＴ９０の温度を調整するために用いられる。高温時のＤＵＴ１００が適切に動作するか否かを試験する高温試験では温媒が使用され、逆に、低温時にＤＵＴ１００が適切に動作するか否かを試験する低温試験では冷媒が使用される。本実施形態では、温媒又は冷媒をソケット３に供給するので、ソケット及びテストヘッドのボード等を保護するために、温媒及び冷媒として気体を用いることが好ましい。また、気体は液体のような凝固及び沸騰の問題が生じにくいため、温度到達範囲を広くとることができる。本実施形態では、特に限定されないが、冷媒として低温の気体窒素を使用し、温媒として高温の空気を使用する場合を例示する。 The continuous flow supply unit 7 is a mechanism that continuously supplies the mixing unit 10 with a heated fluid composed of a coolant or a warm medium that has been heated and temperature-controlled. Hot media and coolant are used to adjust the temperature of the DUT 90 . Hot fluid is used in the high temperature test to test whether the DUT 100 operates properly at high temperatures, and conversely, cold fluid is used in the low temperature test to test whether the DUT 100 operates properly at low temperatures. In this embodiment, since the hot medium or the coolant is supplied to the socket 3, it is preferable to use gas as the hot medium and the coolant in order to protect the socket and the board of the test head. In addition, since gases are less likely to cause the problems of freezing and boiling unlike liquids, a wide temperature reachable range can be secured. In this embodiment, although not particularly limited, a case where low-temperature gaseous nitrogen is used as a refrigerant and high-temperature air is used as a heating medium will be exemplified.
　連続フロー供給部７は、複数の接続部７１ａ，７１ｂと、流路Ｐ１～Ｐ５と、複数のバルブ７２ａ１，７２ａ２，７２ｂと、連続フロー制御部７３と、熱交換器７４と、流路ヒータ７５と、ヒータ制御部７６と、温度センサ７７と、を有している。 The continuous flow supply section 7 includes a plurality of connection sections 71a and 71b, flow paths P 1 to P 5 , a plurality of valves 72a 1 , 72a 2 and 72b, a continuous flow control section 73, a heat exchanger 74, It has a channel heater 75 , a heater control section 76 and a temperature sensor 77 .
　接続部７１ａは、液体窒素を貯留し低温の窒素を供給するＬＮ２（液体窒素）供給源２００に接続されている。ＬＮ２供給源２００は、例えば、液体窒素を高圧で貯留している圧力容器，あるいは工場内の液体窒素供給パイプラインとの接続口を備えており、接続部７１ａに対して、低温の気体窒素及び／又は液体窒素を送ることができる。この接続部７１ａには、二又に分岐する流路Ｐ１が接続されており、分岐した流路Ｐ１は、それぞれ、合流部Jとチャンバ５２とに接続されている。分岐した流路Ｐ１には、ＬＮ２供給源２００から供給された窒素の流量を調整するバルブ７２ａ１，７２ａ２が設けられている。バルブ７２ａ１は、合流部Jに供給する窒素の流量を調整しており、一方で、バルブ７２ａ２は、チャンバ５２の内部に供給する窒素の流量を調整している。 The connecting portion 71a is connected to an LN 2 (liquid nitrogen) supply source 200 that stores liquid nitrogen and supplies low-temperature nitrogen. The LN 2 supply source 200 includes, for example, a pressure vessel that stores liquid nitrogen at high pressure, or a connection port with a liquid nitrogen supply pipeline in the factory. and/or liquid nitrogen can be delivered. A bifurcated flow path P1 is connected to the connecting portion 71a, and the branched flow path P1 is connected to the junction J and the chamber 52, respectively. The branched flow path P 1 is provided with valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen supplied from the LN 2 supply source 200 . The valve 72 a 1 adjusts the flow rate of nitrogen supplied to the junction J, while the valve 72 a 2 adjusts the flow rate of nitrogen supplied to the interior of the chamber 52 .
　接続部７１ｂは、常温の空気を供給するエア供給源３００に接続されている。エア供給源３００は、例えば、外気を接続部７１ｂに供給するポンプを備えている。このエア供給源３００としては、既設の工場配管などを用いてもよい。この接続部７１ｂには、流路Ｐ２が接続されており、この流路Ｐ２の下流側は合流部Jにおいて流路Ｐ１と合流している。この流路Ｐ２にエア供給源３００から供給された空気の流量を調整するバルブ７２ｂが設けられている。 The connecting portion 71b is connected to an air supply source 300 that supplies normal temperature air. The air supply source 300 includes, for example, a pump that supplies outside air to the connecting portion 71b. As the air supply source 300, an existing factory pipe or the like may be used. The connecting portion 71b is connected to the flow path P2 , and the downstream side of the flow path P2 merges with the flow path P1 at the junction J. As shown in FIG. A valve 72b for adjusting the flow rate of the air supplied from the air supply source 300 is provided in the flow path P2 .
　連続フロー制御部７３は、バルブ７２ａ１，７２ａ２，７２ｂの開閉をオンオフ制御する。この連続フロー制御部７３は、ＤＵＴ１００の低温試験を実行する場合に、窒素の流量を調整するバルブ７２ａ１，７２ａ２を開放し、空気の流量を調整するバルブ７２ｂを閉状態に維持する。つまり、連続フロー制御部７３は、低温試験時には、冷媒としての窒素が連続的に供給されるようにバルブ７２ａ１，７２ａ２を制御している。 The continuous flow control unit 73 controls the opening and closing of the valves 72a 1 , 72a 2 and 72b. The continuous flow control unit 73 opens the valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen and keeps the valve 72b for adjusting the flow rate of air closed when performing the low temperature test of the DUT 100 . That is, the continuous flow control section 73 controls the valves 72a 1 and 72a 2 so that nitrogen as a refrigerant is continuously supplied during the low temperature test.
　一方で、ＤＵＴ１００の高温試験を実行する場合には、空気の流量を調整するバルブ７２ｂを開放し、窒素の流量を調整するバルブ７２ａ１，７２ａ２を閉状態に維持する。つまり、連続フロー制御部７３は、高温試験の実行中には、空気が連続的に供給されるようにバルブ７２ｂを制御している。 On the other hand, when performing a high temperature test of the DUT 100, the valve 72b for adjusting the flow rate of air is opened, and the valves 72a 1 and 72a 2 for adjusting the flow rate of nitrogen are kept closed. That is, the continuous flow control section 73 controls the valve 72b so that air is continuously supplied during execution of the high temperature test.
　図２は、本実施形態における電子部品試験装置１のチャンバ５２内部の構成の一例を示す側面図である。図１及び図２に示すように、合流部Jに流路Ｐ３が接続されており、この流路Ｐ３の下流側は、チャンバ５２の内部において熱交換器７４に接続されている。この熱交換器７４は、チャンバ５２の内部に設けられており、流路Ｐ３から供給される流体と、チャンバ５２内の雰囲気と、の間で熱交換を行う。 FIG. 2 is a side view showing an example of the internal configuration of the chamber 52 of the electronic device testing apparatus 1 according to this embodiment. As shown in FIGS. 1 and 2, the flow path P3 is connected to the junction J, and the downstream side of the flow path P3 is connected to the heat exchanger 74 inside the chamber 52 . The heat exchanger 74 is provided inside the chamber 52 and exchanges heat between the fluid supplied from the flow path P3 and the atmosphere inside the chamber 52 .
　図２に示すように、熱交換器７４は、本体部７４１と、この本体部７４１に形成された複数のフィン７４２と、を有している。本体部７４１の内部には、流路Ｐ３から供給された流体が流通する流路Ｐ４が形成されている。この流路Ｐ４は、本体部７４１の一端から他端まで延在しており、本体部７４１との接触面積が大きくなるように蛇行した線形状を有している。フィン７４２は、チャンバ５２の内部に対して露出するように設けられており、このフィン７４２により熱交換器７４の表面積が増加することにより、流路Ｐ４を流通する流体と、チャンバ５２内の雰囲気との熱交換を効率よく行うことができる。 As shown in FIG. 2 , the heat exchanger 74 has a body portion 741 and a plurality of fins 742 formed on the body portion 741 . Inside the body portion 741, a channel P4 through which the fluid supplied from the channel P3 flows is formed. The flow path P4 extends from one end of the body portion 741 to the other end, and has a meandering linear shape so as to increase the contact area with the body portion 741 . The fins 742 are provided so as to be exposed to the interior of the chamber 52 , and the fins 742 increase the surface area of the heat exchanger 74 , so that the fluid flowing through the flow path P 4 and the Heat exchange with the atmosphere can be efficiently performed.
　チャンバ５２内の雰囲気の温度は、チャンバ温度調整装置９により高温又は低温に調整される。このチャンバ温度調整装置９は、上記の接続部７１ａと、上記のバルブ７２ａ２と、上記の流路Ｐ１と、窒素供給口９１と、チャンバヒータ９２と、ファン９３と、を有している。つまり、本実施形態では、ソケット温度調整装置６及びチャンバ温度調整装置９が、流路Ｐ１の一部と、接続部７１ａと、バルブ７２ａ２と、を共用している。 The temperature of the atmosphere inside the chamber 52 is adjusted to high or low temperature by the chamber temperature adjustment device 9 . The chamber temperature control device 9 has the connecting portion 71a, the valve 72a 2 , the flow path P1 , the nitrogen supply port 91, the chamber heater 92, and the fan 93. . That is, in the present embodiment, the socket temperature adjustment device 6 and the chamber temperature adjustment device 9 share a part of the flow path P1 , the connecting portion 71a, and the valve 72a2 .
　窒素供給口９１は、流路Ｐ１を介して接続部７１ａに接続されている。この窒素供給口９１は、ＬＮ２供給源２００から供給された低温の窒素をチャンバ５２内に供給することでチャンバ５２内の雰囲気の温度を低下させる。一方で、チャンバヒータ９２は、チャンバ５２内の雰囲気を加熱して雰囲気の温度を上昇させる。 The nitrogen supply port 91 is connected to the connecting portion 71a via the flow path P1 . The nitrogen supply port 91 reduces the temperature of the atmosphere in the chamber 52 by supplying low temperature nitrogen supplied from the LN 2 supply source 200 into the chamber 52 . On the other hand, the chamber heater 92 heats the atmosphere inside the chamber 52 to raise the temperature of the atmosphere.
　ファン９３は、送風によってチャンバ５２内の雰囲気を循環させることによって、効率よく雰囲気の温度を変化させる。このファン９３は、循環する雰囲気の流れにおいて、熱交換器７４よりも上流側に位置するように設けられており、熱交換器７４に対して送風することができる。また、本実施形態では、ヒータ９２が、熱交換器７４よりも上流側に位置すると共に、ファン９３よりも下流側に位置している。また、本実施形態では、窒素供給口９１が、熱交換器７４よりも上流側に位置すると共に、ファン９３よりも下流側に位置している The fan 93 efficiently changes the temperature of the atmosphere by circulating the atmosphere in the chamber 52 by blowing air. The fan 93 is provided upstream of the heat exchanger 74 in the flow of the circulating atmosphere, and can blow air to the heat exchanger 74 . Further, in this embodiment, the heater 92 is positioned upstream of the heat exchanger 74 and downstream of the fan 93 . Further, in this embodiment, the nitrogen supply port 91 is positioned upstream of the heat exchanger 74 and downstream of the fan 93 .
　ＤＵＴ１００の低温試験を行う場合、チャンバ温度調整装置９は、ファン９３によって送風しながら窒素供給口９１から低温の窒素をチャンバ５２内に供給することで、チャンバ５２内の雰囲気の温度を目標温度（Target Temperature）まで低下させる。雰囲気の温度が目標温度よりも低くなってしまう場合等には、必要に応じて、ヒータ９２によって雰囲気を加熱してもよい。 When conducting a low-temperature test of the DUT 100, the chamber temperature adjustment device 9 supplies low-temperature nitrogen from the nitrogen supply port 91 into the chamber 52 while blowing air with the fan 93, thereby reducing the temperature of the atmosphere in the chamber 52 to the target temperature ( Target Temperature). If the temperature of the atmosphere becomes lower than the target temperature, the atmosphere may be heated by the heater 92 as necessary.
　この際、本実施形態では、低温試験時に、ＬＮ２供給源２００がＬＮ２をソケット温度調整装置６に供給している。低温試験時のチャンバ内の雰囲気の設定温度は、通常、流路Ｐ４を流通する窒素よりも高い温度となるため、本実施形態では、流路Ｐ４を流通する窒素は熱交換器７４によって加熱される。 At this time, in this embodiment, the LN 2 supply source 200 supplies LN 2 to the socket temperature adjustment device 6 during the low temperature test. The set temperature of the atmosphere in the chamber during the low-temperature test is usually higher than the temperature of the nitrogen flowing through the flow path P4 . heated.
　また、ＤＵＴ１００の高温試験を行う場合、チャンバ温度調整装置９は、ファン９３によって送風しながら、ヒータ９２によりチャンバ５２内の雰囲気の温度を目標温度まで上昇させる。本実施形態では、高温試験時に、エア供給源３００が常温の空気をソケット温度調整装置６に供給しているが、高温試験時のチャンバ内の雰囲気の設定温度は常温よりも高いため、高温試験を行う場合においても、流路Ｐ４を流通する流体は熱交換器７４によって加熱されることとなる。 When conducting a high-temperature test of the DUT 100, the chamber temperature adjustment device 9 causes the heater 92 to raise the temperature of the atmosphere in the chamber 52 to the target temperature while blowing air with the fan 93. FIG. In this embodiment, the air supply source 300 supplies room temperature air to the socket temperature adjustment device 6 during the high temperature test. , the fluid flowing through the flow path P 4 is also heated by the heat exchanger 74 .
　このように、チャンバ５２内の雰囲気の温度は、低温試験及び高温試験のいずれの試験においても、流路Ｐ４を流通する流体の温度よりも高い温度に設定されているため、熱交換により流路Ｐ４を流通する流体が加熱される。このように、熱交換器７４によってチャンバ５２内の雰囲気の熱を利用することにより、流路ヒータ７５による流体の加熱量を減らすことができる。 As described above, the temperature of the atmosphere in the chamber 52 is set higher than the temperature of the fluid flowing through the flow path P4 in both the low temperature test and the high temperature test. Fluid flowing through path P4 is heated. By utilizing the heat of the atmosphere in the chamber 52 with the heat exchanger 74 in this manner, the amount of fluid heated by the flow path heater 75 can be reduced.
　流路Ｐ４の下流側に、流路Ｐ５が接続されている。図１に示すように、この流路Ｐ５には、流路ヒータ７５が設けられている。この流路ヒータ７５は、流路Ｐ５を流通する流体を加熱する。上記の通り、流路ヒータ７５により加熱される流体は、予め、熱交換器７４によって加熱されているため、流路ヒータ７５としては出力の小さいヒータを用いることができる。 A flow path P5 is connected to the downstream side of the flow path P4 . As shown in FIG. 1, a channel heater 75 is provided in the channel P5 . The channel heater 75 heats the fluid flowing through the channel P5 . As described above, since the fluid to be heated by the flow path heater 75 is heated in advance by the heat exchanger 74 , a heater with a low output can be used as the flow path heater 75 .
　ヒータ制御部７６は、流路ヒータ７５をフィードバック制御する。具体的には、このヒータ制御部７６は、流路Ｐ５において流路ヒータ７５よりも下流側に設けられた温度センサ７７の温度測定値に基づき、温度測定値と目標温度（Target Temperature）との偏差を小さくするように、流路ヒータ７５の出力をＰＩＤ制御する。この流体の目標温度は、特に限定されないが、例えば、高温試験時には、ＤＵＴの目標温度である設定値（Set temperature）よりも２０℃程度高い温度であってもよいし、低温試験時には、ＤＵＴの目標温度である設定値（Set temperature）よりも２０℃程度低い温度であってもよい。 The heater control unit 76 feedback-controls the flow path heater 75 . Specifically, the heater control unit 76 calculates a temperature measurement value and a target temperature (Target Temperature) based on the temperature measurement value of a temperature sensor 77 provided downstream of the flow path heater 75 in the flow path P5 . The output of the channel heater 75 is PID-controlled so as to reduce the deviation of . The target temperature of the fluid is not particularly limited. The temperature may be about 20° C. lower than the set temperature, which is the target temperature.
　流路Ｐ５の下流側には混合部１０が接続されており、流路ヒータ７５により加熱された後の加熱流体は、混合部１０に供給される。 The mixing section 10 is connected to the downstream side of the flow path P5 , and the heated fluid heated by the flow path heater 75 is supplied to the mixing section 10. FIG.
　パルスフロー供給部８は、常温の圧縮乾燥空気から成る常温流体を混合部１０に断続的に供給する機構である。このパルスフロー供給部８は、常温の圧縮乾燥空気により、連続フロー供給部７から混合部１０に供給された加熱流体の温度を瞬間的に変化させる。 The pulse flow supply unit 8 is a mechanism that intermittently supplies room temperature fluid made of room temperature compressed dry air to the mixing unit 10 . The pulse flow supply section 8 instantaneously changes the temperature of the heating fluid supplied from the continuous flow supply section 7 to the mixing section 10 by means of normal temperature compressed dry air.
　このパルスフロー供給部８は、接続部８１と、バルブ８２と、パルスフロー制御部８３と、を有している。接続部８１は、圧縮乾燥空気を供給するＣＤＡ（Compressed Dry Air）供給源４００に接続されている。ＣＤＡ供給源４００は、例えば、外気を取り込み圧縮するコンプレッサと、圧縮した空気を乾燥するドライヤと、を備えていてもよい。また、ＣＤＡ供給源４００は、圧縮乾燥空気を供給可能な既設の工場配管等であってもよい。 The pulse flow supply section 8 has a connection section 81 , a valve 82 and a pulse flow control section 83 . The connecting portion 81 is connected to a CDA (Compressed Dry Air) supply source 400 that supplies compressed dry air. The CDA source 400 may, for example, include a compressor to take in and compress ambient air and a dryer to dry the compressed air. Alternatively, the CDA supply source 400 may be existing factory piping or the like capable of supplying compressed dry air.
　パルスフロー供給部８が供給する流体は、混合部１０において、連続フロー供給部７から供給される低温の窒素などと混合されるので、結露を防止するために露点温度の低い圧縮乾燥空気を用いることが好ましい。特に限定されないが、圧縮乾燥空気の大気圧下の露点温度は、－７０℃以下であることが好ましい。 The fluid supplied by the pulse flow supply unit 8 is mixed with low-temperature nitrogen or the like supplied from the continuous flow supply unit 7 in the mixing unit 10, so compressed dry air with a low dew point temperature is used to prevent condensation. is preferred. Although not particularly limited, the dew point temperature of compressed dry air under atmospheric pressure is preferably −70° C. or lower.
　この接続部８１には、流路Ｐ６が接続されており、この流路Ｐ６の下流側は、混合部１０に接続されている。また、この流路Ｐ６には、ＣＤＡ供給源４００から供給された圧縮乾燥空気の流量を調整するバルブ８２が設けられている。本実施形態では、バルブ８２として、高周波数を有する常温用のバルブを使用できるため、圧縮乾燥空気の流量の高速な制御が可能となる。 The connecting portion 81 is connected to the flow path P6 , and the downstream side of the flow path P6 is connected to the mixing section 10. As shown in FIG. A valve 82 for adjusting the flow rate of the compressed dry air supplied from the CDA supply source 400 is also provided in the flow path P6 . In this embodiment, a valve for normal temperature having a high frequency can be used as the valve 82, so that the flow rate of the compressed dry air can be controlled at high speed.
　パルスフロー制御部８３は、圧縮乾燥空気が断続的に供給されるようにバルブ８２をＰＷＭ制御する。このパルスフロー制御部８３は、ＤＵＴ１００の温度検出回路１０１から入力された信号に基づいて、ＤＵＴ１００のジャンクション温度Ｔｊを算出する。そして、パルスフロー制御部８３は、ジャンクション温度の算出結果とＤＵＴ１００の目標温度との偏差が小さくなるようにバルブ８２を制御して、流路Ｐ６に供給される圧縮乾燥空気の流量を制御する。この際のジャンクション温度を用いる制御の具体例としては、米国特許出願第１５／７１９，８４９（米国特許出願公開第２０１９／０１０１５８７号明細書）、米国特許出願第１６／３５１，３６３（米国特許出願公開第２０２０／００３３４０２号明細書）、米国特許出願第１６／５７５，４６０（米国特許出願公開第２０２０／０２４１５８２号明細書）、及び、米国特許出願第１６／５７５，４７０（米国特許出願公開第２０２０／０２４１０４０号明細書）に記載された制御を例示することができる。 A pulse flow controller 83 PWM-controls the valve 82 so that compressed dry air is intermittently supplied. This pulse flow control section 83 calculates the junction temperature Tj of the DUT 100 based on the signal input from the temperature detection circuit 101 of the DUT 100 . Then, the pulse flow control unit 83 controls the valve 82 so that the difference between the calculated result of the junction temperature and the target temperature of the DUT 100 becomes small, thereby controlling the flow rate of the compressed dry air supplied to the flow path P6 . . Specific examples of control using the junction temperature at this time include U.S. Patent Application No. 15/719,849 (U.S. Patent Application Publication No. 2019/0101587), U.S. Patent Application No. 16/351,363 (U.S. Patent Application Publication No. 2020/0033402), U.S. Patent Application No. 16/575,460 (U.S. Patent Application Publication No. 2020/0241582), and U.S. Patent Application No. 16/575,470 (U.S. Patent Application Publication No. 2020/0241040) can be exemplified.
　図３は、本実施形態における電子部品試験装置のソケットの近傍の構成の一例を示す断面図である。本実施形態における混合部１０は、ソケットガイド４に設けられている。この混合部１０は、中空を有する部材であり、連続フロー供給部７の流路Ｐ５に接続された流路Ｐ７と、パルスフロー供給部８の流路Ｐ６に接続された流路Ｐ８と、が内部に形成されている。流路Ｐ７には流路Ｐ８の一端が接続しており、この接続部分において、連続フロー供給部７から供給された流体と、パルスフロー供給部８から供給された流体と、が混合される。 FIG. 3 is a cross-sectional view showing an example of the configuration near the socket of the electronic device testing apparatus according to the present embodiment. The mixing section 10 in this embodiment is provided in the socket guide 4 . The mixing section 10 is a member having a hollow, and includes a flow path P7 connected to the flow path P5 of the continuous flow supply section 7 and a flow path P6 connected to the pulse flow supply section 8. 8 are formed inside. One end of the flow path P8 is connected to the flow path P7 , and the fluid supplied from the continuous flow supply section 7 and the fluid supplied from the pulse flow supply section 8 are mixed at this connection portion. be.
　混合部１０の流路Ｐ７は、ソケットガイド４の内部に形成された流路Ｐ９に接続されている。この流路Ｐ９は、ソケット３の内部空間３４に接続されており、この流路Ｐ９を介して混合部１０からの混合流体が内部空間３４に供給される。また、内部空間３４には、ソケットガイド４の流路Ｐ１０が接続されており、この流路Ｐ１０から内部空間３４を通過した混合流体が排気される。本実施形態における混合流体は気体であるため、排気された混合流体を回収する必要はない。 The channel P7 of the mixing section 10 is connected to the channel P9 formed inside the socket guide 4 . The channel P9 is connected to the internal space 34 of the socket 3, and the mixed fluid from the mixing section 10 is supplied to the internal space 34 via the channel P9. Further, the passage P10 of the socket guide 4 is connected to the internal space 34, and the mixed fluid that has passed through the internal space 34 is discharged from the passage P10 . Since the mixed fluid in this embodiment is gaseous, it is not necessary to recover the exhausted mixed fluid.
　本実施形態におけるソケット３は、ハウジング３１と、複数の接触子３２と、コイルばね３３と、内部空間３４と、を有している。このハウジング３１は、ベース部材３１１と、トッププレート３１２と、を有している。ベース部材３１１は、テストヘッド２３上に設けられている。このベース部材３１１は、複数の第１の保持孔３１１ａを有している。 The socket 3 in this embodiment has a housing 31, a plurality of contacts 32, a coil spring 33, and an internal space 34. This housing 31 has a base member 311 and a top plate 312 . A base member 311 is provided on the test head 23 . This base member 311 has a plurality of first holding holes 311a.
　トッププレート３１２は、ベース部材３１１に設けられたコイルばね３３によって、ＤＵＴ１００の押圧方向に沿って移動可能に支持されている。トッププレート３１２は、ベース部材３１１と離隔しており、これにより、ベース部材３１１とトッププレート３１２との間に内部空間３４が形成されている。トッププレート３１２は、第１の保持孔３１１ａに対向するように設けられた複数の第２の保持孔３１２ａを有している。 The top plate 312 is movably supported along the pressing direction of the DUT 100 by a coil spring 33 provided on the base member 311 . The top plate 312 is separated from the base member 311 , thereby forming an internal space 34 between the base member 311 and the top plate 312 . The top plate 312 has a plurality of second holding holes 312a provided to face the first holding holes 311a.
　第１及び第２の保持孔３１１ａ，３１２ａに接触子３２が保持されている。この接触子３２は、金属等から構成されており、第２の保持孔３１２ａにおいて、ＤＵＴ１００の端子１０２と接触する。これにより、ＤＵＴ１００とテストヘッド２３とが電気的に接続される。 The contacts 32 are held in the first and second holding holes 311a and 312a. The contactor 32 is made of metal or the like, and contacts the terminal 102 of the DUT 100 in the second holding hole 312a. Thereby, the DUT 100 and the test head 23 are electrically connected.
　また、接触子３２の一部は、内部空間３４に露出しており、内部空間３４に供給された混合流体と接触する。接触子３２は熱伝導率が高いため、ヒートシンクとして機能する。内部空間３４に供給された混合流体は、接触子３２を介して、ＤＵＴ１００との間で熱交換を行い、ＤＵＴ１００の温度を調整する。 A part of the contactor 32 is exposed to the internal space 34 and comes into contact with the mixed fluid supplied to the internal space 34 . Since the contactor 32 has high thermal conductivity, it functions as a heat sink. The mixed fluid supplied to the internal space 34 exchanges heat with the DUT 100 via the contactor 32 to adjust the temperature of the DUT 100 .
　本実施形態における電子部品試験装置１は、低温試験を行う場合、以下のように温度調整を実行する。まず、連続フロー制御部７３がバルブ７２ａ１，７２ａ２を開き、バルブ７２ａ１，７２ａ２を開状態に維持することで、低温の窒素がチャンバ５２及び熱交換器７４に連続的に供給される。熱交換器７４に供給された窒素は、チャンバ５２内の雰囲気と熱交換することにより加熱された後、流路Ｐ５において、窒素の温度が設定値よりも２０℃程度低い温度となるように、流路ヒータ７５により加熱される。この際、窒素は熱交換器７４により加熱されているため、流路ヒータ７５による窒素の加熱量を低減することができる。混合部１０には、流路ヒータ７５により加熱された窒素が連続的に供給される。 The electronic device testing apparatus 1 according to the present embodiment performs temperature adjustment as follows when performing a low-temperature test. First, the continuous flow control unit 73 opens the valves 72a 1 and 72a 2 and maintains the valves 72a 1 and 72a 2 in an open state, so that low temperature nitrogen is continuously supplied to the chamber 52 and the heat exchanger 74. . After the nitrogen supplied to the heat exchanger 74 is heated by exchanging heat with the atmosphere in the chamber 52, the temperature of the nitrogen in the flow path P5 is set to a temperature about 20° C. lower than the set value. , are heated by the channel heater 75 . At this time, since the nitrogen is heated by the heat exchanger 74, the amount of nitrogen heated by the passage heater 75 can be reduced. Nitrogen heated by a channel heater 75 is continuously supplied to the mixing section 10 .
　これと同時に、パルスフロー制御部８３は、上述のＰＷＭ制御により、バルブ８２の開閉を繰り返し、混合部１０に断続的に圧縮乾燥空気を供給する。圧縮乾燥空気は、混合部１０にて窒素と混合されることで、混合流体の温度を上昇させ、設定温度付近に温度調整された混合流体が作られる。このように、本実施形態では、パルスフロー制御部８３によるＰＷＭ制御によりバルブ８２の開閉を頻繁に繰り返すため、ソケット３に供給する混合流体の温度を精密に制御することができる。 At the same time, the pulse flow control section 83 repeats opening and closing of the valve 82 by the above-described PWM control to intermittently supply compressed dry air to the mixing section 10 . Compressed dry air is mixed with nitrogen in the mixing unit 10 to raise the temperature of the mixed fluid and produce a mixed fluid whose temperature is adjusted to around the set temperature. As described above, in this embodiment, since the valve 82 is frequently opened and closed by the PWM control by the pulse flow control unit 83, the temperature of the mixed fluid supplied to the socket 3 can be precisely controlled.
　一方で、高温試験を行う場合、本実施形態における電子部品試験装置１は、以下のように温度調整を実行する。まず、連続フロー制御部７３がバルブ７２ｂを開き、バルブ７２ｂを開状態に維持することで、常温の空気が、熱交換器７４に連続的に供給される。この際、チャンバ５２内の雰囲気はチャンバヒータ９２により加熱される。熱交換器７４に供給された空気は、チャンバ５２内の雰囲気と熱交換することにより加熱された後、流路Ｐ５において、空気の温度が設定値よりも２０℃程度高い温度となるように、流路ヒータ７５により加熱される。この際、空気は熱交換器７４により加熱されているため、流路ヒータ７５による空気の加熱量を低減することができる。混合部１０には、流路ヒータ７５により加熱された空気が連続的に供給される。 On the other hand, when performing a high temperature test, the electronic device testing apparatus 1 in this embodiment performs temperature adjustment as follows. First, the continuous flow control unit 73 opens the valve 72 b and maintains the valve 72 b in an open state, so that room temperature air is continuously supplied to the heat exchanger 74 . At this time, the atmosphere in the chamber 52 is heated by the chamber heater 92 . After the air supplied to the heat exchanger 74 is heated by exchanging heat with the atmosphere in the chamber 52, the temperature of the air in the flow path P5 is adjusted to a temperature about 20° C. higher than the set value. , are heated by the channel heater 75 . At this time, since the air is heated by the heat exchanger 74, the amount of air heated by the flow path heater 75 can be reduced. The air heated by the flow path heater 75 is continuously supplied to the mixing section 10 .
　これと同時に、パルスフロー制御部８３は、上述のＰＷＭ制御により、バルブ８２の開閉を繰り返し、混合部１０に断続的に圧縮乾燥空気を供給する。圧縮乾燥空気は、混合部１０にて加熱空気と混合されることで、混合流体の温度を低下させ、設定温度付近に温度調整された混合流体が作られる。このように、高温試験を行う場合においても、パルスフロー制御部８３によるＰＷＭ制御によりバルブ８２の開閉を頻繁に繰り返すため、ソケット３に供給する混合流体の温度を精密に制御することができる。 At the same time, the pulse flow control section 83 repeats opening and closing of the valve 82 by the above-described PWM control to intermittently supply compressed dry air to the mixing section 10 . Compressed dry air is mixed with heated air in the mixing unit 10 to lower the temperature of the mixed fluid and produce a mixed fluid whose temperature is adjusted to around the set temperature. Thus, even when performing a high-temperature test, the PWM control by the pulse flow control unit 83 frequently repeats the opening and closing of the valve 82, so the temperature of the mixed fluid supplied to the socket 3 can be precisely controlled.
　以上のような本実施形態における電子部品試験装置１であれば、混合部１０において、低温の気体窒素や加熱空気等の加熱流体に対して、常温の圧縮乾燥空気等の常温流体を混合することにより、混合流体の温度を短時間で大きく変化させることが可能となる。従って、ＤＵＴの温度調整の高速化を図ることができる。 In the electronic component testing apparatus 1 according to the present embodiment as described above, in the mixing section 10, a normal temperature fluid such as normal temperature compressed dry air is mixed with a heated fluid such as low temperature gaseous nitrogen or heated air. Thus, the temperature of the mixed fluid can be greatly changed in a short period of time. Therefore, it is possible to speed up the temperature adjustment of the DUT.
　また、本実施形態における温度調整装置１であれば、ソケット３に混合流体が供給されるため、熱抵抗の小さいＤＵＴ１００の下部に混合流体を供給することができる。よって、ＤＵＴを効率的に温度調整することができる。特に、樹脂モールドデバイスでは、熱抵抗の大きい樹脂モールドにより半導体チップが覆われているため、樹脂モールド側（上側）から温度を印加しても効率よく半導体チップの温度を調整できないが、本実施形態のようにソケット３の内部空間を介して下側から温度を印加することで効率よく半導体チップの温度を調整できる。 Further, with the temperature adjustment device 1 of the present embodiment, the mixed fluid is supplied to the socket 3, so the mixed fluid can be supplied to the lower portion of the DUT 100 with low thermal resistance. Therefore, the temperature of the DUT can be efficiently adjusted. In particular, in a resin-molded device, the semiconductor chip is covered with a resin mold having a large thermal resistance, so the temperature of the semiconductor chip cannot be adjusted efficiently even if the temperature is applied from the resin mold side (upper side). By applying the temperature from below through the inner space of the socket 3, the temperature of the semiconductor chip can be efficiently adjusted.
　特に、本実施形態では、熱容量が小さく伝熱性の高い接触子３２をヒートシンクとして用いて、混合流体とＤＵＴ１００との間で熱交換を行うため、ＤＵＴ１００の温度調整を効率よく行うことができる。 In particular, in this embodiment, the contactor 32 with a small heat capacity and high heat conductivity is used as a heat sink to exchange heat between the mixed fluid and the DUT 100, so the temperature of the DUT 100 can be efficiently adjusted.
　また、従来、短時間に急激な自己発熱等が生じるタイプのＤＵＴを試験する場合、温度調整がＤＵＴの急激な温度変化に追従できない場合があったが、本実施形態における電子部品試験装置１であれば、温度調整に用いる混合流体の温度を高速で切り替えることが可能であるため、ＤＵＴ１００の急激な温度変化に追従することができる。 Conventionally, when testing a DUT that generates rapid self-heating in a short period of time, the temperature adjustment may not be able to follow the rapid temperature change of the DUT. If there is, it is possible to switch the temperature of the mixed fluid used for temperature adjustment at high speed, so that rapid temperature changes of the DUT 100 can be followed.
　また、混合部１０をソケット３の近傍に設けることにより、内部空間３４に到達するまでの流路が短くなるため、混合流体の流路から受ける熱抵抗の影響を小さくすることができる。よって、温度調整の精度を向上することができる。 In addition, by providing the mixing section 10 near the socket 3, the flow path to reach the internal space 34 is shortened, so that the influence of heat resistance received from the flow path of the mixed fluid can be reduced. Therefore, the accuracy of temperature adjustment can be improved.
　また、コンタクトアームに温度調整装置を備える電子部品試験装置では、ハンドラがコンタクトアームを複数有する場合、温度調整装置の数も増えてしまう。これに対して、本実施形態のソケット３側から温度調整を行う電子部品試験装置１であれば、コンタクトアーム５１の数とは無関係に、最小限の数の温度調整装置６でＤＵＴ１００の温度調整を行うことができる。 In addition, in an electronic component testing apparatus that has a temperature adjustment device on its contact arm, if the handler has multiple contact arms, the number of temperature adjustment devices will increase. On the other hand, in the electronic device testing apparatus 1 that adjusts the temperature from the socket 3 side of the present embodiment, regardless of the number of contact arms 51, the temperature of the DUT 100 is adjusted with the minimum number of temperature adjustment devices 6. It can be performed.
　なお、以上説明した実施形態は、本発明の理解を容易にするために記載されたものであって、本発明を限定するために記載されたものではない。したがって、上記の実施形態に開示された各要素は、本発明の技術的範囲に属する全ての設計変更や均等物をも含む趣旨である。 It should be noted that the embodiments described above are described to facilitate understanding of the present invention, and are not described to limit the present invention. Therefore, each element disclosed in the above embodiments is meant to include all design changes and equivalents that fall within the technical scope of the present invention.
　例えば、上記実施形態では、ＬＮ２供給源２００から供給される低温の窒素と、エア供給源３００から供給される空気と、を加熱流体として同時に使用することはないが、これに限定されることはなく、加熱流体として両者を混合した混合流体を使用してもよい。 For example, in the above embodiment, cold nitrogen supplied from the LN2 source 200 and air supplied from the air source 300 are not used simultaneously as heating fluids, but are limited to this. Alternatively, a mixed fluid in which both are mixed may be used as the heating fluid.
　また、上記実施形態では、ソケット温度調整装置６において流体を加熱してから混合部１０に供給しているがこれに限定されない。例えば、試験時の設定温度に応じて、チャンバ５４の内部の雰囲気の温度を、熱交換器７４の流路Ｐ４を流通する流体よりも低温とすることにより、流体を冷却してもよい。また、流路ヒータ７５の代わりに冷却器を設けることにより、流体を冷却してもよい。 Further, in the above-described embodiment, the fluid is heated in the socket temperature adjustment device 6 and then supplied to the mixing section 10, but the present invention is not limited to this. For example, the fluid may be cooled by making the temperature of the atmosphere inside the chamber 54 lower than the temperature of the fluid flowing through the flow path P4 of the heat exchanger 74 according to the set temperature during the test. Also, the fluid may be cooled by providing a cooler instead of the flow path heater 75 .
　また、上記実施形態では、混合部１０をソケットガイドに設けているが、これに限定されない。例えば、混合部１０をソケットに設けてもよい。 Also, in the above embodiment, the mixing section 10 is provided in the socket guide, but it is not limited to this. For example, the mixing section 10 may be provided in a socket.
１…電子部品試験装置
　２…テスタ
　　２１…テスタメインフレーム
　　２２…ケーブル
　　２３…テストヘッド
　３…ソケット
　　３１…ハウジング
　　　３１１…ベース部材
　　　　３１１ａ…第１の保持孔
　　　３１２…トッププレート
　　　　３１２ａ…第２の保持孔
　　３２…接触子
　　３３…コイルばね
　　３４…内部空間
　４…ソケットガイド
　５…ハンドラ
　　５１…コンタクトアーム
　　　５１１…アーム
　　　５１２…プッシャ
　　５２…チャンバ
　６…ソケット温度調整装置
　　７…連続フロー供給部
　　　　７１ａ，７１ｂ…接続部
　　　　７２ａ１，７２ａ２，７２ｂ…バルブ
　　　　７３…連続フロー制御部
　　　　７４…熱交換器
　　　　　７４１…本体部
　　　　　７４２…フィン
　　　　７５…流路ヒータ
　　　　７６…ヒータ制御部
　　　　７７…温度センサ
　　８…パルスフロー供給部
　　　８１…接続部
　　　８２…バルブ
　　　８３…パルスフロー制御部
　９…チャンバ温度調整装置
　　９１…窒素供給口
　　９２…ファン
　　９３…チャンバヒータ
　　１０…混合部
　１１…温度調整システム
　　Ｐ１～Ｐ１０…流路
　　Ｊ…合流部
　１００…ＤＵＴ
　　１０１…温度検出回路
　　１０２…端子
２００…ＬＮ２供給源
３００…エア供給源
４００…ＣＤＡ供給源 REFERENCE SIGNS LIST 1 Electronic component testing device 2 Tester 21 Tester main frame 22 Cable 23 Test head 3 Socket 31 Housing 311 Base member 311a First holding hole 312 Top plate 312a Second holding hole 32 ... Contact 33... Coil spring 34... Internal space 4... Socket guide 5... Handler 51... Contact arm 511... Arm 512... Pusher 52... Chamber 6... Socket temperature adjustment device 7... Continuous flow supply part 71a, 71b... Connection part 72a REFERENCE SIGNS LIST 1 , 72a 2 , 72b Valve 73 Continuous flow controller 74 Heat exchanger 741 Main body 742 Fin 75 Flow path heater 76 Heater controller 77 Temperature sensor 8 Pulse flow supply unit 81 Connector 82... Valve 83... Pulse flow controller 9... Chamber temperature adjustment device 91... Nitrogen supply port 92... Fan 93... Chamber heater 10... Mixing part 11... Temperature adjustment system P1 to P10 ... Flow path J... Merging part 100... DUTs
101... Temperature detection circuit 102... Terminal 200... LN 2 supply source 300... Air supply source 400... CDA supply source

Claims (16)

  1. 　ソケットに電気的に接続されるＤＵＴの温度を調整する温度調整装置であって、
    　前記ソケットは、内部空間を有し、
    　前記温度調整装置は、
    　第１の流体を供給する第１の供給部と、
    　前記第１の流体の温度と異なる温度を有する第２の流体を供給する第２の供給部と、
    　前記第１の供給部から供給された第１の流体と、前記第２の供給部から供給された前記第２の流体とを混合して、混合流体を前記内部空間に供給する混合部と、を備えた温度調整装置。     A temperature adjustment device for adjusting the temperature of a DUT electrically connected to a socket, comprising:
    the socket has an interior space,
    The temperature adjustment device is
    a first supply unit that supplies a first fluid;
    a second supply unit that supplies a second fluid having a temperature different from the temperature of the first fluid;
    a mixing unit that mixes the first fluid supplied from the first supply unit and the second fluid supplied from the second supply unit and supplies the mixed fluid to the internal space; temperature control device with
  2. 　請求項１に記載の温度調整装置であって、
    　前記第１の流体は、常温の空気であり、
    　前記第２の流体は、前記第１の流体の温度よりも高い温度を有する気体、又は、前記第１の流体の温度よりも低い温度を有する気体である温度調整装置。     The temperature adjustment device according to claim 1,
    wherein the first fluid is normal temperature air;
    The temperature control device, wherein the second fluid is a gas having a temperature higher than that of the first fluid or a gas having a temperature lower than that of the first fluid.
  3. 　請求項１又は２に記載の温度調整装置であって、
    　前記第１の供給部は、
    　前記第１の流体を供給する第１の供給源が接続される第１の接続部と、
    　前記第１の接続部を介して前記第１の供給源から供給された前記第１の流体の流量を調整する第１のバルブと、を備えた温度調整装置。     The temperature adjustment device according to claim 1 or 2,
    The first supply unit is
    a first connecting portion to which a first supply source for supplying the first fluid is connected;
    and a first valve that adjusts the flow rate of the first fluid supplied from the first supply source through the first connection.
  4. 　請求項３に記載の温度調整装置であって、
    　前記第１の供給部は、前記ＤＵＴの温度を算出し、前記ＤＵＴの温度の算出結果に基づいて、前記第１のバルブを制御する第１の制御部を備えた温度調整装置。     The temperature adjustment device according to claim 3,
    The temperature adjustment device, wherein the first supply unit includes a first control unit that calculates the temperature of the DUT and controls the first valve based on the calculation result of the temperature of the DUT.
  5. 　請求項４に記載の温度調整装置であって、
    　前記第１の制御部は、前記第１の流体が断続的に供給されるように、前記第１のバルブを制御する温度調整装置。     The temperature adjustment device according to claim 4,
    The first control unit is a temperature control device that controls the first valve such that the first fluid is intermittently supplied.
  6. 　請求項４又は５に記載の温度調整装置であって、
    　前記第１の制御部は、ＰＷＭ制御により前記第１のバルブを制御する温度調整装置。     The temperature adjustment device according to claim 4 or 5,
    A said 1st control part is a temperature control apparatus which controls a said 1st valve|bulb by PWM control.
  7. 　請求項１～６のいずれか一項に記載の温度調整装置であって、
    　前記第２の供給部は、
    　前記第２の流体を供給する第２の供給源が接続される第２の接続部と、
    　前記第２の接続部を介して前記第２の供給源から供給された前記第２の流体の流量を調整する第２のバルブと、
    　前記第２の接続部を介して前記第２の供給源から供給された前記第２の流体の温度を調整する温度調整部と、を備えた温度調整装置。     The temperature adjustment device according to any one of claims 1 to 6,
    The second supply unit is
    a second connecting portion to which a second supply source for supplying the second fluid is connected;
    a second valve that adjusts the flow rate of the second fluid supplied from the second supply source through the second connection;
    a temperature adjustment unit that adjusts the temperature of the second fluid supplied from the second supply source through the second connection unit.
  8. 　請求項７に記載の温度調整装置であって、
    　前記第２の供給部は、前記第２のバルブを制御する第２の制御部を備え、
    　前記第２の制御部は、前記第２の流体が連続的に供給されるように、前記第２のバルブを制御する温度調整装置。     The temperature adjustment device according to claim 7,
    The second supply unit includes a second control unit that controls the second valve,
    The second control unit is a temperature control device that controls the second valve so that the second fluid is continuously supplied.
  9. 　請求項８に記載の温度調整装置であって、
    　前記第２の制御部は、オンオフ制御により前記第２のバルブを制御する温度調整装置。     The temperature adjustment device according to claim 8,
    A said 2nd control part is a temperature control apparatus which controls a said 2nd valve|bulb by on-off control.
  10. 　請求項７～９のいずれか一項に記載の温度調整装置であって、
    　前記第２の供給部は、
    　前記温度調整部の下流側で前記第２の流体の温度を測定する測定部と、
    　前記測定部の測定結果に基づいて、前記温度調整部を制御する第３の制御部と、を備えた温度調整装置。     The temperature adjustment device according to any one of claims 7 to 9,
    The second supply unit is
    a measurement unit that measures the temperature of the second fluid on the downstream side of the temperature adjustment unit;
    and a third control unit that controls the temperature adjustment unit based on the measurement result of the measurement unit.
  11. 　請求項７～１０のいずれか一項に記載の温度調整装置であって、
    　前記第２の接続部は、
    液体窒素を貯留し窒素を供給する第３の供給源が接続される第３の接続部と、を含み、
    　前記第２のバルブは、
    前記第３の接続部を介して前記第３の供給源から供給された前記窒素の流量を調整する第３のバルブを含む温度調整装置。     The temperature adjustment device according to any one of claims 7 to 10,
    The second connecting portion is
    a third connection to which a third supply source that stores liquid nitrogen and supplies nitrogen is connected,
    The second valve is
    A temperature regulating device comprising a third valve for regulating the flow rate of said nitrogen supplied from said third supply source via said third connection.
  12. 　請求項１１に記載の温度調整装置であって、
    　前記第２の接続部は、空気を供給する第４の供給源が接続される第４の接続部を含み、
    　前記第２のバルブは、前記第４の接続部を介して前記第４の供給源から供給された前記空気の流量を調整する第４のバルブを含み、
    　前記第２の供給部は、前記第３のバルブに接続された第１の流路と、前記第４のバルブに接続された第２の流路とが合流する合流部を備えており、
    　前記第２の供給部は、前記第３の供給源から供給された前記窒素、前記第４の供給源から供給された前記空気、又は、前記空気及び前記窒素の混合流体を、前記第２の流体として供給する温度調整装置。     The temperature adjustment device according to claim 11,
    The second connection includes a fourth connection to which a fourth supply source of air is connected,
    the second valve includes a fourth valve that adjusts the flow rate of the air supplied from the fourth supply source through the fourth connection;
    The second supply unit includes a confluence portion where a first flow path connected to the third valve and a second flow path connected to the fourth valve merge,
    The second supply unit supplies the nitrogen supplied from the third supply source, the air supplied from the fourth supply source, or a mixed fluid of the air and the nitrogen to the second A temperature control device supplied as a fluid.
  13. 　請求項７～１２のいずれか一項に記載の温度調整装置であって、
    　前記温度調整部は、前記第２の流体を加熱する加熱部を含む温度調整装置。     The temperature adjustment device according to any one of claims 7 to 12,
    The temperature control device, wherein the temperature control unit includes a heating unit that heats the second fluid.
  14. 　請求項１～１３のいずれか一項に記載の温度調整装置であって、
    　前記混合部は、前記ソケットの周囲に配置されたソケットガイド、又は、前記ソケットに設けられている温度調整装置。     The temperature adjustment device according to any one of claims 1 to 13,
    The mixing section is a socket guide arranged around the socket or a temperature control device provided in the socket.
  15. 　ＤＵＴを試験する電子部品試験装置であって、
    　内部空間を有するソケットと、
    　請求項１～１４のいずれか一項に記載の温度調整装置と、を備え、
    　前記温度調整装置は、前記ソケットの前記内部空間に流体を供給する電子部品試験装置。     An electronic component test apparatus for testing a DUT, comprising:
    a socket having an interior space;
    A temperature adjustment device according to any one of claims 1 to 14,
    The temperature adjustment device is an electronic device testing device that supplies a fluid to the internal space of the socket.
  16. 　請求項１５に記載の電子部品試験装置であって、
    　前記ソケットは、
    　前記ＤＵＴの端子に電気的に接続される接触子と、
    　前記接触子を保持するハウジングと、を備え、
    　前記内部空間は、前記ハウジングに設けられており、
    　前記接触子は、前記内部空間内で露出している電子部品試験装置。     The electronic component testing apparatus according to claim 15,
    The socket is
    a contact that is electrically connected to the terminal of the DUT;
    a housing that holds the contact,
    The internal space is provided in the housing,
    The electronic component testing apparatus, wherein the contact is exposed within the internal space.
PCT/JP2021/041221 2021-11-09 2021-11-09 Temperature adjustment device and electronic component testing device WO2023084612A1 (en)

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710251A (en) * 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
JP2002162437A (en) * 2000-11-24 2002-06-07 Ando Electric Co Ltd Auto-handler and dew formation preventing method for auto-handler
JP2002236140A (en) * 2000-12-07 2002-08-23 Advantest Corp Electronic part testing socket and electronic part testing device using it
JP2004317432A (en) * 2003-04-18 2004-11-11 Juki Corp Temperature regulator for semiconductor device, and inspection device for semiconductor device
JP2008107014A (en) * 2006-10-26 2008-05-08 Yac Co Ltd Cooling device, and cooling method of chamber space for device test
WO2008123608A1 (en) * 2007-04-04 2008-10-16 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
JP2013221911A (en) * 2012-04-19 2013-10-28 Seiko Epson Corp Handler and component inspection device
JP2020122707A (en) * 2019-01-30 2020-08-13 株式会社アドバンテスト Electronic component handling device and electronic component tester
JP2021134804A (en) * 2020-02-25 2021-09-13 パーパス株式会社 Heat source device using proportional solenoid valve, control method, program, recording medium, controller, and water heater

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3710251A (en) * 1971-04-07 1973-01-09 Collins Radio Co Microelectric heat exchanger pedestal
JP2002162437A (en) * 2000-11-24 2002-06-07 Ando Electric Co Ltd Auto-handler and dew formation preventing method for auto-handler
JP2002236140A (en) * 2000-12-07 2002-08-23 Advantest Corp Electronic part testing socket and electronic part testing device using it
JP2004317432A (en) * 2003-04-18 2004-11-11 Juki Corp Temperature regulator for semiconductor device, and inspection device for semiconductor device
JP2008107014A (en) * 2006-10-26 2008-05-08 Yac Co Ltd Cooling device, and cooling method of chamber space for device test
WO2008123608A1 (en) * 2007-04-04 2008-10-16 Nhk Spring Co., Ltd. Conductive contact holder and conductive contact unit
JP2013221911A (en) * 2012-04-19 2013-10-28 Seiko Epson Corp Handler and component inspection device
JP2020122707A (en) * 2019-01-30 2020-08-13 株式会社アドバンテスト Electronic component handling device and electronic component tester
JP2021134804A (en) * 2020-02-25 2021-09-13 パーパス株式会社 Heat source device using proportional solenoid valve, control method, program, recording medium, controller, and water heater

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