WO2023070651A1 - 光刻质量的优化方法、装置、电子设备、介质及程序产品 - Google Patents

光刻质量的优化方法、装置、电子设备、介质及程序产品 Download PDF

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WO2023070651A1
WO2023070651A1 PCT/CN2021/127864 CN2021127864W WO2023070651A1 WO 2023070651 A1 WO2023070651 A1 WO 2023070651A1 CN 2021127864 W CN2021127864 W CN 2021127864W WO 2023070651 A1 WO2023070651 A1 WO 2023070651A1
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metal
quality
film layer
layer
metal film
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PCT/CN2021/127864
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English (en)
French (fr)
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刘丽红
韦亚一
丁虎文
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中国科学院微电子研究所
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Priority to US18/255,045 priority Critical patent/US20240005064A1/en
Priority to PCT/CN2021/127864 priority patent/WO2023070651A1/zh
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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/20—Design optimisation, verification or simulation
    • G06F30/23—Design optimisation, verification or simulation using finite element methods [FEM] or finite difference methods [FDM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
    • G06F17/10—Complex mathematical operations
    • G06F17/16—Matrix or vector computation, e.g. matrix-matrix or matrix-vector multiplication, matrix factorization
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2111/00—Details relating to CAD techniques
    • G06F2111/14—Details relating to CAD techniques related to nanotechnology

Definitions

  • the disclosure relates to the technical field of nano-lithography and optical metrology, and in particular to a method, device, electronic equipment, medium and program product for optimizing the quality of photolithography.
  • Surface plasmons propagate in the form of evanescent waves bound at the metal-medium interface.
  • the evanescent wave has the characteristic of exponential attenuation, and the coupling, amplification, transmission, convergence and imaging of the evanescent wave are carried out through the periodic distribution of metal dielectric units. Therefore, the surface plasmon-based nanolithography technology exposes the pattern on the mask to the photoresist through the periodic distribution of metal dielectric units.
  • the reliability and stability of the nanolithography process depends on the contrast and intensity of the photoresist aerial image. Therefore, the roughness of the metal film layer has an important influence on the quality of nanolithography that cannot be ignored.
  • the embodiments of the present disclosure provide a photolithographic quality optimization method, device, electronic equipment, media and program products, based on the analysis of the influence of the roughness of the metal film layer on the photolithographic quality, To optimize the photolithographic quality of metal-dielectric cells.
  • the first aspect of the present disclosure provides a method for optimizing photolithography quality, including: based on the characteristic matrix method and Bloch's theorem, determining the wave function spurious items introduced by the surface roughness of the metal film layer;
  • the discrete items are input into the mathematical model of lithography quality deviation for calculation and simulation, and the analysis curve of the influence of the metal film layer roughness on the lithography quality is obtained.
  • the influence analysis curve represents the effect of the metal film layer roughness on the lithography quality;
  • the surface roughness of the metal film layer is reduced and/or a metal-dielectric multilayer film structure is provided between the mask above the metal-dielectric unit and the air to optimize the photolithography quality of the metal-dielectric unit.
  • the wave function spurious term introduced by the surface roughness of the metal film layer is determined, including: according to the characteristic matrix method, the characteristic matrix of the single-layer film in the metal-dielectric unit is obtained; according to Based on the characteristic matrix of the single-layer film, the unit characteristic matrix of the metal-dielectric unit is obtained; based on Bloch's theorem and the unit characteristic matrix, the change term of the film thickness caused by the roughness of the metal film layer is determined, and then the surface of the metal film layer is obtained.
  • the spurious term of the wave function introduced by the roughness including: according to the characteristic matrix method, the characteristic matrix of the single-layer film in the metal-dielectric unit is obtained; according to Based on the characteristic matrix of the single-layer film, the unit characteristic matrix of the metal-dielectric unit is obtained; based on Bloch's theorem and the unit characteristic matrix, the change term of the film thickness caused by the roughness of the metal film layer is determined, and then the surface of the metal film layer is obtained.
  • the characteristic matrix M n (k x , t n ) of a single-layer film satisfies the following relationship:
  • k x represents the wave vector of the evanescent wave along the x-axis
  • t n represents the layer thickness of the monolayer film
  • k zn represents the wave vector of the electromagnetic wave along the z-axis
  • k 0 represents the wave vector in vacuum
  • ⁇ 0 represents the vacuum
  • the dielectric constant of , ⁇ n represents the dielectric constant of the monolayer film.
  • unit characteristic matrix M unit (k x , t n ) of the metal-dielectric unit satisfies the following relationship:
  • t m the layer thickness of the metal layer
  • t d the layer thickness of the dielectric layer
  • k zm the wave vector of the electromagnetic wave in the metal layer along the z axis
  • k zd the electromagnetic wave in the metal layer
  • ⁇ m is the dielectric constant of the metal layer.
  • the wave function stray term ⁇ (z′) introduced by the surface roughness of the metal film satisfies the following relationship:
  • k z represents the wave vector of the evanescent wave along the z axis
  • ⁇ (z) represents the normalized wave function of the transverse magnetic wave in the xz plane
  • ⁇ t represents the change term introduced by the film thickness t m caused by the roughness of the metal film layer
  • z' z+t m +t d
  • z represents the coordinate of the electromagnetic wave
  • z' represents the coordinate of the electromagnetic wave passing through a metal-dielectric unit.
  • the stray term of the wave function is input into the mathematical model of the lithography quality deviation for calculation and simulation, and the analysis curve of the influence of the roughness of the metal film layer on the lithography quality is obtained, including:
  • the method before the step of determining the wave function spurious term introduced by the surface roughness of the metal film layer, the method also includes: using an atomic force microscope to test the top surface morphology of the metal film layer; using template stripping and flipping technology to test The bottom surface morphology of the metal film layer; according to the top surface topography and the bottom surface topography, the surface roughness of the metal film layer is obtained.
  • the metal-dielectric unit is composed of at least one metal film layer, and the dielectric layer in the metal-dielectric unit is located between the metal film layers.
  • the metal film layer is composed of one or more of Ag, Al, Au.
  • the metal-dielectric multilayer film structure is an Ag-SiO 2 multilayer film structure.
  • the second aspect of the present disclosure provides a device for optimizing photolithography quality, including: a wave function spurious item determination module, which is used to determine the noise introduced by the surface roughness of the metal film layer based on the characteristic matrix method and Bloch's theorem.
  • the spurious term of the wave function the simulation module, which is used to input the spurious term of the wave function into the mathematical model of the lithography quality deviation for calculation and simulation, and obtain the analysis curve of the influence of the roughness of the metal film layer on the quality of the lithography, and the influence analysis curve represents The influence result of the roughness of the metal film layer on the lithography quality; the lithography quality optimization module is used to reduce the surface roughness of the metal film layer and/or between the mask plate and the air above the metal-dielectric unit according to the influence result.
  • a metal-dielectric multilayer film structure is arranged between them to optimize the photolithography quality of the metal-dielectric unit.
  • a third aspect of the present disclosure provides an electronic device, including: a memory, a processor, and a computer program stored on the memory and operable on the processor.
  • the processor executes the computer program, the first aspect of the present disclosure is realized.
  • the optimization method of lithographic quality provided by aspect.
  • a fourth aspect of the present disclosure provides a computer-readable storage medium on which a computer program is stored.
  • the computer program is executed by a processor, the method for optimizing photolithography quality provided by the first aspect of the present disclosure is implemented.
  • a fifth aspect of the present disclosure provides a computer program product, including a computer program.
  • the computer program is executed by a processor, the method for optimizing lithography quality provided by the first aspect of the present disclosure is implemented.
  • the present disclosure provides a photolithography quality optimization method, device, electronic equipment, computer-readable storage medium and computer program product, which determine the wave function introduced by the surface roughness of the metal film layer through the characteristic matrix method and Bloch's theorem Stray items, combined with wave function stray items for numerical simulation, analyze the impact of metal film layer roughness on photolithographic quality, so as to improve the photolithographic quality of metal-dielectric units, and then reduce the line edge roughness of photoresist patterns Spend.
  • FIG. 1 schematically shows a flowchart of a method for optimizing photolithography quality according to an embodiment of the present disclosure
  • FIG. 2 schematically shows a schematic structural diagram of a metal-dielectric unit according to an embodiment of the present disclosure
  • Fig. 3 schematically shows a schematic diagram of the Poynting vector distribution of the metal-dielectric unit shown in Fig. 2;
  • Fig. 4 schematically shows a schematic diagram of light intensity distribution normalized at the center of the photoresist of the metal-dielectric unit shown in Fig. 2;
  • Fig. 5 schematically shows a schematic diagram of the curve of light intensity contrast and Ag layer-type roughness in the photoresist shown in Fig. 2;
  • FIG. 6 schematically shows a schematic structural diagram of a metal-dielectric unit according to yet another embodiment of the present disclosure
  • Fig. 7 schematically shows a schematic diagram of the Poynting vector distribution of the metal-dielectric unit shown in Fig. 6;
  • FIG. 8 schematically shows a schematic diagram of the normalized light intensity distribution at the center of the photoresist of the metal-dielectric unit shown in FIG. 6;
  • Fig. 9 schematically shows a schematic diagram of the curve of light intensity contrast and Ag layer-type roughness in the photoresist shown in Fig. 6;
  • Fig. 10 schematically shows a schematic structural diagram of a metal-dielectric unit according to yet another embodiment of the present disclosure
  • Fig. 11 schematically shows a schematic diagram of the Poynting vector distribution of the metal-dielectric unit shown in Fig. 10;
  • FIG. 12 schematically shows a schematic diagram of the normalized light intensity distribution at the center of the photoresist of the metal-dielectric unit shown in FIG. 10;
  • Fig. 13 schematically shows a schematic diagram of the curve of light intensity contrast and Ag layer-type roughness in the photoresist shown in Fig. 10;
  • Fig. 14 schematically shows a block diagram of an apparatus for optimizing photolithography quality according to an embodiment of the present disclosure
  • Fig. 15 schematically shows a block diagram of an electronic device suitable for implementing the method described above according to an embodiment of the present disclosure.
  • Coating roughness is divided into long-range and short-range roughness.
  • the long-range roughness is caused by the average error in the coating process
  • the short-range roughness is caused by a random defect at a certain point in the coating process.
  • the disclosure mainly focuses on the long-range roughness RMS in the process of film layer processing, and analyzes the deviation of the photoresist aerial image from the ideal image caused by the average surface shape error in the process of processing.
  • Surface plasmons are transmitted through metal dielectric units arranged periodically.
  • the surface roughness RMS of the metal film layer is distributed in the range of 0-2nm.
  • the influence of the roughness of the metal film layer on the quality of photolithography is not only reflected in the reduction of imaging resolution, but also with the increase of the film layer roughness, the energy of the electromagnetic field will decay rapidly.
  • the influence of the surface roughness of the metal film layer on the imaging quality in the photoresist is mainly analyzed based on the light intensity contrast.
  • FIG. 1 schematically shows a flowchart of a method for optimizing photolithography quality according to an embodiment of the present disclosure. As shown in FIG. 1, the method includes: steps S101-S103.
  • the spurious term of the wave function introduced by the surface roughness of the metal film layer is determined based on the characteristic matrix method and Bloch's theorem.
  • the spurious term of the wave function is input into the mathematical model of the lithography quality deviation for calculation and simulation, and the analysis curve of the influence of the roughness of the metal film layer on the lithography quality is obtained. Engraving quality affects the results.
  • the method before determining the wave function spurious term introduced by the surface roughness of the metal film layer based on the characteristic matrix method and Bloch's theorem, the method further includes: using an atomic force microscope to test the upper surface of the metal film layer Morphology: Use the template peeling and flipping technology to test the lower surface morphology of the metal film layer; obtain the surface roughness of the metal film layer according to the upper surface morphology and the lower surface morphology.
  • the wave function spurious term introduced by the surface roughness of the metal film layer is determined.
  • determining the wave function spurious term introduced by the surface roughness of the metal film layer includes: according to the characteristic matrix method, obtaining the characteristic matrix of the single-layer film in the metal-dielectric unit; according to the characteristic matrix of the single-layer film, obtaining the metal-dielectric The element characteristic matrix of the unit; based on Bloch's theorem and the unit characteristic matrix, determine the change term of the film thickness caused by the roughness of the metal film layer, and then obtain the wave function spurious term introduced by the surface roughness of the metal film layer.
  • the characteristic matrix M n (k x , t n ) of a single-layer film with a thickness of t n satisfies the following relationship:
  • k x represents the wave vector of the evanescent wave along the x-axis
  • t n represents the layer thickness of the monolayer film
  • k zn represents the wave vector of the electromagnetic wave along the z-axis
  • k 0 represents the wave vector in vacuum
  • ⁇ 0 represents the vacuum
  • the dielectric constant of , ⁇ n represents the dielectric constant of the monolayer film.
  • the layer thickness of the single-layer film in the above formula refers to the layer thickness of the metal film or the thickness of the dielectric layer.
  • the unit characteristic matrix M unit (k x , t) of the metal-dielectric unit can be obtained, which satisfies the following relationship:
  • M m and M d are the characteristic matrices of the metal layer and the dielectric layer respectively, and m 11 , m 12 , m 13 , and m 14 are the elements of the unit characteristic matrix M unit (k x , t n ).
  • t m the layer thickness of the metal layer
  • t d the layer thickness of the dielectric layer
  • k zm the wave vector of the electromagnetic wave in the metal layer along the z axis
  • k zd the wave vector of the electromagnetic wave in the dielectric layer
  • ⁇ m the dielectric constant of the metal layer
  • ⁇ d the dielectric constant of the dielectric layer.
  • the wave function ⁇ (z) represents the normalized wave function of the transverse magnetic wave in the x-z plane, and its electric fields along the x-axis and z-axis can be expressed as:
  • k xn and k zn are the wave vectors of the transverse magnetic wave along the x-axis and z-axis; ⁇ is the angular frequency; the wave function after a metal-medium cycle is ⁇ (z′).
  • z′ z+t m +t d
  • z represents the coordinate of the electromagnetic wave
  • z′ represents the coordinate of the electromagnetic wave passing through a metal-dielectric unit.
  • k z represents the wave vector of the evanescent wave along the z axis
  • ⁇ (z) represents the normalized wave function of the transverse magnetic wave in the xz plane
  • ⁇ t represents the change term introduced by the film thickness t m caused by the roughness of the metal film layer .
  • the surface roughness RMS is introduced into the thickness t m of the metal film layer, and the nanoscale fluctuation of the film thickness is analyzed, resulting in the evanescent wave vector (k x , k z ) Changes in two-dimensional spatial distribution.
  • the real part of (k x , k z ) leads to changes in the phase of the electromagnetic field, which in turn affects the resolution of lithographic imaging; the imaginary part of (k x , k z ) determines the attenuation of the electromagnetic field, thereby affecting the size of the device, and the optical The effective depth of focus in the resist.
  • the wave function spurious items are input into the mathematical model of the lithography quality deviation for calculation and simulation, and the analysis curve of the influence of the roughness of the metal film layer on the lithography quality is obtained, including: inputting the wave function spurious items Perform calculation and simulation in the mathematical model of lithography quality deviation to obtain the energy density distribution results of the metal-dielectric unit; according to the energy density distribution results, the analysis curve of the influence of metal film layer roughness on lithography quality is obtained.
  • the spurious term of the wave function obtained in step S101 is input into the mathematical model of the lithography quality deviation, which is the simulation model of the metal-dielectric unit.
  • the simulation calculation is carried out by using the finite element analysis method, and the roughness of the metal film layer is obtained.
  • the influence analysis curve of roughness on lithography quality the influence analysis curve characterizes the effect of metal film layer roughness on lithography quality, which can be used to measure lithography quality by lithography imaging contrast.
  • the metal-dielectric multilayer film structure is arranged between the metal-dielectric unit and the air to optimize the photolithography quality of the metal-dielectric unit, thereby reducing the line edge roughness of the photoresist pattern.
  • the metal-dielectric multilayer film structure may be an Ag-SiO 2 multilayer film structure or the like.
  • the metal-dielectric unit is composed of at least one metal film layer, and the dielectric layer in the metal-dielectric unit is located between the metal film layers.
  • the metal-dielectric unit can be a photolithographic film composed of Ag-Pr An imaging structure in the form of glue-silver, or a resonant cavity lens structure composed of Ag-Pr-Ag, etc., wherein the Pr layer is located on the surface of the Ag layer or between multiple Ag layers.
  • the metal film layer may be composed of one or more of Ag, Al, and Au.
  • the structure of the metal film layer and the metal-dielectric multilayer film is not limited to the types shown in the above embodiments, which can be set according to actual application conditions, which are not limited in the embodiments of the present disclosure.
  • the metal-dielectric unit structure is an imaging structure based on photoresist-silver, specifically: a silicon dioxide substrate 10, an Ag layer 20, a photoresist layer 30, a periodic chromium strip layer 40 and Mask substrate 50, wherein, mask substrate 50 is quartz, Ag layer 20, photoresist layer 30 are positioned on silicon dioxide substrate 10 successively, is air (air) between periodic chromium stripe layer 40 and photoresist layer 30 ).
  • the wavelength of the monochromatic incident light source under ideal conditions is 365nm.
  • the transverse magnetic wave is incident, so the vibration direction of the magnetic field is downward perpendicular to the incident direction of the transverse magnetic wave.
  • the dielectric constant of the mask substrate Quartz is 2.25, and the mask mask is composed of a mask substrate 50 and six chromium (Cr) strips 40, and the spaces between the chromium strips are filled with air.
  • the dielectric constant of metal Cr is -8.55-8.96i
  • the thickness of the Cr strip is 40nm
  • the width of Cr that is, the line width of the mask is 120nm.
  • the thickness of the air layer is 15nm.
  • the electromagnetic wave reaches the photoresist layer after passing through the air layer.
  • the thickness of the photoresist layer is 30 nm
  • the dielectric constant of the photoresist is 2.59.
  • the Ag thickness of the photoresist lower layer is 50nm, and the dielectric constant is -2.4-0.24i.
  • the substrate is silicon dioxide SiO 2 , and there is no special requirement on the thickness of SiO 2 .
  • the thickness of the substrate SiO 2 is 20 nm, and the dielectric constant is 2.17.
  • the thickness of the air layer has a greater influence on the imaging quality of the photoresist aerial image. Due to the exponential decay characteristic of the evanescent wave, the spacing of the air layers is on the scale of tens of nanometers.
  • the lower layer of silver 20 in the photoresist mainly plays a role in enhancing the reflection of the electromagnetic field in the photoresist, so the thickness of the lower layer of silver has little influence on the electric field intensity, but the surface roughness of the lower layer of silver 20 has an important impact on the light intensity contrast .
  • the Poynting vector is the power flow distribution of the electromagnetic field per unit time, also known as the time-average power flow, and the unit is W/m 2 .
  • the energy distribution of the electromagnetic field in the photoresist that is, the energy density distribution of the metal-dielectric unit is obtained.
  • the normalized light intensity distribution map of the photoresist center based on the photoresist-silver imaging structure can be obtained in turn, as shown in Figure 4, and based on the photoresist-silver
  • the analysis curve of the effect of the roughness of the metal film layer on the quality of photolithography in the imaging structure in the form of silver is shown in FIG. 5 .
  • the film roughness RMS increased from 0.1nm to 0.4nm, and the light intensity contrast decreased from 0.989 to 0.972, but the contrast did not decrease significantly; the film roughness RMS increased from 0.4nm to 0.7nm, and the light Strong contrast increased from 0.972 to 0.986.
  • the roughness of the film layer is in the range of 0.1nm to 0.7nm, and the light intensity contrast is kept in the range greater than 0.97. The degree of influence on the imaging quality of the aerial image in the photoresist is small.
  • the structure of the metal-dielectric unit is a resonant cavity lens, that is, a silver-photoresist-silver (Ag-Pr-Ag) structure, as shown in FIG. 6 .
  • the upper layer of silver 20 is set on the photoresist 30 , the layer thickness of the upper layer of silver 20 is 20nm, and other parameters are kept the same as in the first embodiment.
  • the resonant cavity imaging structure in the form of Ag-Pr-Ag can enhance the light intensity distribution in the photoresist.
  • FIG. 8 is a schematic diagram of the normalized light intensity distribution at the center of the photoresist of the resonant cavity imaging structure.
  • the electric field mode in the center of the photoresist decreases to a certain extent, and the electric field and light intensity distribution appear a certain degree of resonance phenomenon.
  • the RMS of Ag film layer roughness above and below the photoresist increases from 0.1nm to 0.7nm, which has no obvious influence on the light intensity distribution in the center of the photoresist.
  • FIG. 9 is a schematic diagram of a curve showing the contrast of light intensity in the photoresist of the resonant cavity imaging structure and the roughness of the Ag layer.
  • the surface roughness of the upper and lower Ag layers of the photoresist varies in the range of 0.1nm to 0.7nm, and the light intensity contrast of the central aerial image of the photoresist is maintained above 0.98. Therefore, for the imaging structure of Ag-Pr-Ag, the roughness of the film layer is in the range of 0.7nm, which has no great influence on the quality of photolithography, but its overall light intensity contrast is compared with that of the Pr-Ag in Example 1 The imaging structure is high.
  • the structure of the metal-dielectric unit is a photoresist-silver imaging structure based on Ag-SiO 2 multilayer film, as shown in FIG. 10 .
  • the Ag- SiO2 multilayer film is composed of alternately arranged Ag layers 20 and silicon dioxide layers 10, specifically: a titanium dioxide flat layer 60, an Ag layer 20, a silicon dioxide layer 10, and an Ag layer are sequentially arranged on the chromium strip 40. 20.
  • the dielectric constant of titanium dioxide is 7.8375-0.2800i.
  • the dielectric constant of multilayer Ag is -2.0525-0.73533i, and that of SiO2 is 2.1898-0.008838i.
  • Other parameters are consistent with Example 1.
  • this embodiment is based on the imaging structure of the photoresist-silver form of the Ag- SiO2 multilayer film. Due to the layer-by-layer coupling and superposition effect of the multilayer film on the evanescent wave, the electromagnetic field in the propagation process Energy is enhanced compared with embodiment 1.
  • FIG. 12 is a schematic diagram of the normalized light intensity distribution at the center of the photoresist of the resonant cavity imaging structure.
  • the roughness RMS of the Ag film layer increases from 0.1nm to 0.7nm, and the evanescent wave stray term introduced, after The layer-by-layer accumulation and coupling of the film layers, reaching the part of the photoresist, did not lead to changes in the light intensity distribution of the photoresist center space image.
  • the accumulation and coupling effect of the film can improve the tolerance of the imaging structure of Pr-Ag to the roughness of the film, and reduce the influence of the roughness of the film on the quality of lithography.
  • FIG. 13 is a schematic diagram of a curve showing the contrast of light intensity in the photoresist of the resonant cavity imaging structure and the roughness of the Ag layer.
  • the roughness of the film layer increased from 0.1nm to 0.7nm, and the light intensity contrast of the central aerial image of the photoresist remained at a level greater than 0.992 and slightly lower than 0.993, and the light intensity contrast did not change. Therefore, for the imaging structure of Pr-Ag, the influence of the roughness of the metal film layer on the spatial image of the photoresist, that is, the quality of the lithography, is due to the coupling and superposition of the evanescent wave during the periodic transmission of the metal-dielectric unit. Increased tolerance to roughness of metal film layers.
  • Embodiment 1 and Embodiment 2 it can be clearly seen from Embodiment 1 and Embodiment 2 that the surface roughness of the metal film layer has a certain influence on the photolithographic quality, and the photolithographic quality of the Ag-Pr-Ag structure is higher than that of Pr-Ag.
  • the amount of photoresist is good, and a metal Ag layer is introduced on the upper surface of the photoresist layer, and Ag-Pr-Ag forms a reflection resonant cavity, which improves the light intensity distribution in the photoresist and the contrast with the photoresist.
  • the introduction of heavy metal Ag into the upper and lower layers of the imaging structure requires a metal ion cleaning process with better adaptability to effectively clean and detect the wafer after photolithography.
  • Example 3 the problem of heavy metal pollution in the photolithography process of this imaging structure has been solved.
  • Example 3 it can be seen that for the mask-air-Pr-Ag structure of Example 1, a metal-dielectric multilayer film is introduced between the mask and air, which reduces the influence of film roughness on the quality of lithography .
  • the structure of the metal-dielectric unit in the above embodiments, the thickness of the single-layer film, the material, etc. are only illustrative, and it does not mean that the embodiments of the present disclosure are not applicable to metal-dielectric units with other structures. cell structure.
  • the optimization method provided in the present disclosure is not limited to the metal-dielectric unit structure where the metal film layer is Ag, and can be used to optimize the roughness of other metal layers and dielectric layers in other practical applications.
  • the metal-dielectric unit structure according to the actual needs can be analyzed based on the optimization method provided by the present disclosure, and the photolithography quality in the photolithography process can be optimized, thereby reducing the photoresist pattern.
  • Line edge roughness In the actual photolithography process, the metal-dielectric unit structure according to the actual needs can be analyzed based on the optimization method provided by the present disclosure, and the photolithography quality in the photolithography process can be optimized, thereby reducing the photoresist pattern.
  • FIG. 14 schematically shows a block diagram of an apparatus for optimizing photolithography quality according to an embodiment of the present disclosure.
  • the apparatus 1400 for optimizing lithography quality includes: a wave function spurious item determination module 1410 , a simulation module 1420 and a lithography quality optimization module 1430 .
  • the photolithographic quality optimization apparatus 1400 can be used to implement the photolithographic quality optimization method described with reference to FIG. 1 .
  • the wave function spurious item determining module 1410 is used to determine the wave function spurious item introduced by the surface roughness of the metal film layer based on the characteristic matrix method and Bloch's theorem. According to an embodiment of the present disclosure, the wave function spurious term determining module 1410 may be used to, for example, execute step S101 described above with reference to FIG. 1 , which will not be repeated here.
  • the simulation module 1420 is used to input the spurious term of the wave function into the mathematical model of the lithography quality deviation for calculation and simulation, and obtain the analysis curve of the influence of the roughness of the metal film layer on the lithography quality, and the influence analysis curve represents the roughness of the metal film layer Effect on lithography quality results.
  • the simulation module 1420 may be used to, for example, execute step S102 described above with reference to FIG. 1 , which will not be repeated here.
  • the photolithographic quality optimization module 1430 is used to reduce the roughness of the metal film layer surface and/or set the metal-dielectric multilayer film structure between the mask plate and the air above the metal-dielectric unit according to the impact results, so as to optimize Lithographic quality of metal-dielectric cells.
  • the lithography quality optimization module 1430 may be used to, for example, execute the step S103 described above with reference to FIG. 1 , which will not be repeated here.
  • Modules, sub-modules, units, any multiple of sub-units according to the embodiments of the present disclosure, or at least part of the functions of any multiple of them may be implemented in one module. Any one or more of modules, submodules, units, and subunits according to the embodiments of the present disclosure may be implemented by being divided into multiple modules.
  • modules, submodules, units, and subunits may be at least partially implemented as hardware circuits, such as field programmable gate arrays (FPGAs), programmable logic arrays (PLAs), system-on-chip, system-on-substrate, system-on-package, application-specific integrated circuit (ASIC), or hardware or firmware that may be implemented by any other reasonable means of integrating or packaging circuits, or in a combination of software, hardware, and firmware Any one of these implementations or an appropriate combination of any of them.
  • FPGAs field programmable gate arrays
  • PLAs programmable logic arrays
  • ASIC application-specific integrated circuit
  • hardware or firmware hardware or firmware that may be implemented by any other reasonable means of integrating or packaging circuits, or in a combination of software, hardware, and firmware Any one of these implementations or an appropriate combination of any of them.
  • one or more of the modules, submodules, units, and subunits according to the embodiments of the present disclosure may be at least partially implemented as computer program modules, and when the
  • any multiple of the wave function spurious term determination module 1410 , the simulation module 1420 and the lithography quality optimization module 1430 can be implemented in one module, or any one module can be split into multiple modules. Alternatively, at least part of the functions of one or more of these modules may be combined with at least part of the functions of other modules and implemented in one module.
  • At least one of the wave function spurious term determination module 1410, the simulation module 1420, and the lithographic quality optimization module 1430 may be at least partially implemented as a hardware circuit, such as a field programmable gate array (FPGA), programmable logic array (PLA), system-on-chip, system-on-substrate, system-on-package, application-specific integrated circuit (ASIC), or any other reasonable means of integrating or packaging circuits, such as hardware or firmware, may be implemented, Or it may be realized by any one of software, hardware and firmware, or by an appropriate combination of any of them.
  • at least one of the wave function spurious term determination module 1410, the simulation module 1420 and the lithography quality optimization module 1430 can be at least partially implemented as a computer program module, and when the computer program module is executed, corresponding functions can be performed .
  • Fig. 15 schematically shows a block diagram of an electronic device suitable for implementing the method described above according to an embodiment of the present disclosure.
  • the electronic device shown in FIG. 15 is only an example, and should not limit the functions and application scope of the embodiments of the present disclosure.
  • the electronic device 1500 described in this embodiment includes: a processor 1501, which can be loaded into a random access memory (RAM) according to a program stored in a read-only memory (ROM) 1502 or from a storage part 1508. ) 1503 to perform various appropriate actions and processing.
  • the processor 1501 may include, for example, a general-purpose microprocessor (eg, a CPU), an instruction set processor and/or related chipsets and/or a special-purpose microprocessor (eg, an application-specific integrated circuit (ASIC)), and the like.
  • Processor 1501 may also include on-board memory for caching purposes.
  • the processor 1501 may include a single processing unit or a plurality of processing units for executing different actions of the method flow according to the embodiments of the present disclosure.
  • the processor 1501, ROM 1502, and RAM 1503 are connected to each other through a bus 1504.
  • the processor 1501 executes various operations according to the method flow of the embodiment of the present disclosure by executing programs in the ROM 1502 and/or RAM 1503. It should be noted that the program may also be stored in one or more memories other than ROM 1502 and RAM 1503.
  • the processor 1501 may also perform various operations according to the method flow of the embodiments of the present disclosure by executing programs stored in the one or more memories.
  • the electronic device 1500 may further include an input/output (I/O) interface 1505 which is also connected to the bus 1504 .
  • the electronic device 1500 may also include one or more of the following components connected to the I/O interface 1505: an input section 1506 including a keyboard, a mouse, etc.; including a cathode ray tube (CRT), a liquid crystal display (LCD), etc.
  • the communication section 1509 performs communication processing via a network such as the Internet.
  • a drive 1510 is also connected to the I/O interface 1505 as needed.
  • a removable medium 1511 such as a magnetic disk, an optical disk, a magneto-optical disk, a semiconductor memory, etc. is mounted on the drive 1510 as necessary so that a computer program read therefrom is installed into the storage section 1508 as necessary.
  • the method flow according to the embodiments of the present disclosure can be implemented as a computer software program.
  • the embodiments of the present disclosure include a computer program product, which includes a computer program carried on a computer-readable storage medium, where the computer program includes program codes for executing the methods shown in the flowcharts.
  • the computer program may be downloaded and installed from a network via communication portion 1509 and/or installed from removable media 1511 .
  • the processor 1501 When the computer program is executed by the processor 1501, the above-mentioned functions defined in the system of the embodiment of the present disclosure are performed.
  • the above-described systems, devices, devices, modules, units, etc. may be implemented by computer program modules.
  • An embodiment of the present invention also provides a computer-readable storage medium, which may be included in the device/apparatus/system described in the above-mentioned embodiments; or may exist independently without being assembled into the equipment/device/system.
  • the above-mentioned computer-readable storage medium carries one or more programs, and when the above-mentioned one or more programs are executed, the method for optimizing photolithography quality according to the embodiments of the present disclosure is realized.
  • the computer-readable storage medium may be a non-volatile computer-readable storage medium, such as may include but not limited to: portable computer disk, hard disk, random access memory (RAM), read-only memory (ROM) , erasable programmable read-only memory (EPROM or flash memory), portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination of the above.
  • a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device.
  • a computer-readable storage medium may include one or more memories other than the above-described ROM 1502 and/or RAM 1503 and/or ROM 1502 and RAM 1503.
  • Embodiments of the present disclosure also include a computer program product, which includes a computer program including program codes for executing the methods shown in the flowcharts.
  • the program code is used to enable the computer system to implement the photolithography quality optimization method provided by the embodiments of the present disclosure.
  • the above-mentioned functions defined in the system/apparatus of the embodiment of the present disclosure are executed.
  • the above-described systems, devices, modules, units, etc. may be implemented by computer program modules.
  • the computer program may rely on tangible storage media such as optical storage devices and magnetic storage devices.
  • the computer program can also be transmitted and distributed in the form of a signal on network media, downloaded and installed through the communication part 1509, and/or installed from the removable media 1511.
  • the program code contained in the computer program can be transmitted by any appropriate network medium, including but not limited to: wireless, wired, etc., or any appropriate combination of the above.
  • the computer program may be downloaded and installed from a network via communication portion 1509 and/or installed from removable media 1511 .
  • the computer program is executed by the processor 1501
  • the above-mentioned functions defined in the system of the embodiment of the present disclosure are executed.
  • the above-described systems, devices, devices, modules, units, etc. may be implemented by computer program modules.
  • the program codes for executing the computer programs provided by the embodiments of the present disclosure can be written in any combination of one or more programming languages, specifically, high-level procedural and/or object-oriented programming language, and/or assembly/machine language to implement these computing programs.
  • Programming languages include, but are not limited to, programming languages such as Java, C++, python, "C" or similar.
  • the program code can execute entirely on the user computing device, partly on the user device, partly on the remote computing device, or entirely on the remote computing device or server.
  • the remote computing device may be connected to the user computing device through any kind of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., using an Internet service provider). business to connect via the Internet).
  • LAN local area network
  • WAN wide area network
  • Internet service provider an Internet service provider
  • each functional module in each embodiment of the present disclosure may be integrated into one processing module, each module may exist separately physically, or two or more modules may be integrated into one module.
  • the above-mentioned integrated modules can be implemented in the form of hardware or in the form of software function modules. If the integrated modules are realized in the form of software function modules and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on such an understanding, the essence of the technical solution of the present invention or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of software products.
  • each block in a flowchart or block diagram may represent a module, program segment, or portion of code that includes one or more logical functions for implementing specified executable instructions.
  • the functions noted in the block may occur out of the order noted in the figures. For example, two blocks shown in succession may, in fact, be executed substantially concurrently, or they may sometimes be executed in the reverse order, depending upon the functionality involved.
  • each block in the block diagrams or flowchart illustrations, and combinations of blocks in the block diagrams or flowchart illustrations can be implemented by a dedicated hardware-based system that performs the specified function or operation, or can be implemented by a A combination of dedicated hardware and computer instructions.

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Abstract

提供了一种光刻质量的优化方法，包括：基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项（S101）；将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果（S102）；根据影响结果，降低金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化金属-介质单元的光刻质量（S103）。提供了一种光刻质量的优化装置（1400）、电子设备（1500）、计算机可读存储介质及计算机程序产品。

Description

光刻质量的优化方法、装置、电子设备、介质及程序产品 技术领域
本公开涉及纳米光刻与光学计量技术领域，具体涉及一种光刻质量的优化方法、装置、电子设备、介质及程序产品。
背景技术
表面等离子体以束缚在金属介质交界面上的倏逝波的形式进行传播。倏逝波具有指数衰减的特性，通过金属介质单元周期性分布的形式，进行倏逝波的耦合、放大、传输、汇聚与成像。因此，基于表面等离子体的纳米光刻技术，通过金属介质单元的周期性分布，将掩模上的图案曝光成像在光刻胶中。纳米光刻工艺的可靠性和稳定性，依赖于光刻胶空间像的对比度和强度。因此，金属膜层表面的粗糙度对纳米光刻的质量具有不可忽视的重要影响。
发明内容
为解决现有技术中存在的问题，本公开的实施例提供的一种光刻质量的优化方法、装置、电子设备、介质及程序产品，基于金属膜层粗糙度对光刻质量的影响分析，以优化金属-介质单元的光刻质量。
本公开的第一个方面提供了一种光刻质量的优化方法，包括：基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项；将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果；根据影响结果，降低金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化金属-介质单元的光刻质量。
进一步地，基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项，包括：根据特征矩阵法，得到金属-介质单元中单层膜的特征矩阵；根据单层膜的特征矩阵，得到金属-介质单元的单元特征矩阵；基于布洛赫定理及单元特征矩阵，确定由金属膜层粗糙度导致的膜层厚度引入变化项，进而得到由金属膜层表面粗糙度引入的波函数杂散项。
进一步地，单层膜的特征矩阵M n(k x，t n)满足以下关系：
Figure PCTCN2021127864-appb-000001
其中，k x表示倏逝波沿x轴的波矢，t n表示单层膜的层厚，k zn表示电磁波沿着z轴的波矢，k 0表示真空中的波矢，ε 0表示真空的介电常数，ε n表示单层膜的介电常数。
进一步地，金属-介质单元的单元特征矩阵M unit(k x，t n)满足以下关系：
Figure PCTCN2021127864-appb-000002
其中，t n＝t m＝t d，t m表示金属层的层厚，t d表示介质层的层厚，k zm表示电磁波在金属层中沿着z轴的波矢，k zd表示电磁波在介质层中沿着z轴的波矢，ε m为金属层的介电常数。
进一步地，由金属膜层表面粗糙度引入的波函数杂散项Δψ(z′)满足以下关系：
Δψ(z′)＝exp(-ik z(t m+Δt+t d))ψ(z)
其中，k z表示倏逝波沿z轴的波矢，ψ(z)表示x-z平面内横磁波归一化的波函数，Δt表示由金属膜层粗糙度导致的膜层厚度t m引入变化项，z′＝z+t m+t d，z表示电磁波的坐标，z′表示电磁波经过一个金属-介质单元的坐标。
进一步地，将波函数杂散项输入至光刻质量偏差数学模型中进行计 算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，包括：
将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属-介质单元的能量密度分布结果；根据能量密度分布结果，得到金属膜层粗糙度对光刻质量的影响分析曲线。
进一步地，在所述确定由金属膜层表面粗糙度引入的波函数杂散项的步骤之前，该方法还包括：采用原子力显微镜测试金属膜层的上表面形貌；采用模板剥离、翻转技术测试金属膜层下表面形貌；根据上表面形貌及下表面形貌，得到金属膜层的表面粗糙度。
进一步地，金属-介质单元由至少一层金属膜层构成，金属-介质单元中的介质层位于金属膜层之间。
进一步地，金属膜层由Ag、Al、Au中的一种或多种构成。
进一步地，金属-介质多层膜结构为Ag-SiO 2多层膜结构。
本公开的第二个方面提供了一种光刻质量的优化装置，包括：波函数杂散项确定模块，用于基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项；仿真模块，用于将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果；光刻质量优化模块，用于根据影响结果，降低金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化金属-介质单元的光刻质量。
本公开的第三个方面提供了一种电子设备，包括：存储器，处理器及存储在存储器上并可在处理器上运行的计算机程序，处理器执行计算机程序时，实现本公开的第一个方面提供的光刻质量的优化方法。
本公开的第四个方面提供了一种计算机可读存储介质，其上存储有计算机程序，该计算机程序被处理器执行时，实现本公开的第一个方面提供的光刻质量的优化方法。
本公开的第五个方面提供了一种计算机程序产品，包括计算机程序，所述计算机程序被处理器执行时实现本公开的第一个方面提供的光刻质量的优化方法。
本公开提供的一种光刻质量的优化方法、装置、电子设备、计算机可读存储介质及计算机程序产品，通过特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项，结合波函数杂散项进行数值仿真，将金属膜层粗糙度对光刻质量进行影响分析，以使提高金属-介质单元的光刻质量，进而降低光刻胶图形的线边缘粗糙度。
附图说明
为了更完整地理解本公开及其优势，现在将参考结合附图的以下描述，其中：
图1示意性示出了根据本公开一实施例的光刻质量的优化方法的流程图；
图2示意性示出了根据本公开一实施例的金属-介质单元的结构示意图；
图3示意性示出了图2所示的金属-介质单元的坡印廷矢量分布示意图；
图4示意性示出了图2所示的金属-介质单元光刻胶中心归一化的光强分布示意图；
图5示意性示出了图2所示的光刻胶中的光强对比度与Ag层面型粗糙度的曲线示意图；
图6示意性示出了根据本公开再一实施例的金属-介质单元的结构示意图；
图7示意性示出了图6所示的金属-介质单元的坡印廷矢量分布示意图；
图8示意性示出了图6所示的金属-介质单元光刻胶中心归一化的光强分布示意图；
图9示意性示出了图6所示的光刻胶中的光强对比度与Ag层面型粗糙度的曲线示意图；
图10示意性示出了根据本公开又一实施例的金属-介质单元的结构 示意图；
图11示意性示出了图10所示的金属-介质单元的坡印廷矢量分布示意图；
图12示意性示出了图10所示的金属-介质单元光刻胶中心归一化的光强分布示意图；
图13示意性示出了图10所示的光刻胶中的光强对比度与Ag层面型粗糙度的曲线示意图；
图14示意性示出了根据本公开一实施例的光刻质量的优化装置的方框图；
图15示意性示出了根据本公开一实施例的适于实现上文描述的方法的电子设备的方框图。
具体实施方式
以下，将参照附图来描述本公开的实施例。但是应该理解，这些描述只是示例性的，而并非要限制本公开的范围。在下面的详细描述中，为便于解释，阐述了许多具体的细节以提供对本公开实施例的全面理解。然而，明显地，一个或多个实施例在没有这些具体细节的情况下也可以被实施。此外，在以下说明中，省略了对公知结构和技术的描述，以避免不必要地混淆本公开的概念。
在此使用的术语仅仅是为了描述具体实施例，而并非意在限制本公开。在此使用的术语“包括”、“包含”等表明了所述特征、步骤、操作和/或部件的存在，但是并不排除存在或添加一个或多个其他特征、步骤、操作或部件。
在此使用的所有术语(包括技术和科学术语)具有本领域技术人员通常所理解的含义，除非另外定义。应注意，这里使用的术语应解释为具有与本说明书的上下文相一致的含义，而不应以理想化或过于刻板的方式来解释。
在使用类似于“A、B和C等中至少一个”这样的表述的情况下， 一般来说应该按照本领域技术人员通常理解该表述的含义来予以解释(例如，“具有A、B和C中至少一个的系统”应包括但不限于单独具有A、单独具有B、单独具有C、具有A和B、具有A和C、具有B和C、和/或具有A、B、C的系统等)。在使用类似于“A、B或C等中至少一个”这样的表述的情况下，一般来说应该按照本领域技术人员通常理解该表述的含义来予以解释(例如，“具有A、B或C中至少一个的系统”应包括但不限于单独具有A、单独具有B、单独具有C、具有A和B、具有A和C、具有B和C、和/或具有A、B、C的系统等)。
附图中示出了一些方框图和/或流程图。应理解，方框图和/或流程图中的一些方框或其组合可以由计算机程序指令来实现。这些计算机程序指令可以提供给通用计算机、专用计算机或其他可编程数据处理装置的处理器，从而这些指令在由该处理器执行时可以创建用于实现这些方框图和/或流程图中所说明的功能/操作的装置。本公开的技术可以硬件和/或软件(包括固件、微代码等)的形式来实现。另外，本公开的技术可以采取存储有指令的计算机可读存储介质上的计算机程序产品的形式，该计算机程序产品可供指令执行系统使用或者结合指令执行系统使用。
膜层粗糙度分为长程和短程粗糙度。长程粗糙度是由于膜层加工过程中的平均误差导致的，短程粗糙度是由于膜层加工过程中某一个点的随机缺陷引起的。本公开主要针对膜层加工过程中的长程粗糙度RMS，分析加工过程中的平均面型误差，导致的光刻胶空间像与理想像的偏差。表面等离子体通过周期排布的金属介质单元进行传输。金属膜层的表面粗糙度RMS分布在0～2nm的范围内，金属膜层粗糙度对光刻质量的影响，不仅表现在成像分辨力的降低，随着膜层粗糙度的增加，电磁场的能量会迅速衰减。具体实施中，主要基于光强对比度分析金属膜层表面粗糙度对光刻胶中成像质量的影响。
图1示意性示出了根据本公开实施例的光刻质量的优化方法的流程图。如图1所示，该方法包括：步骤S101～S103。
在操作S101，基于特征矩阵法与布洛赫定理，确定由金属膜层表面 粗糙度引入的波函数杂散项。
在操作S102，将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果。
在操作S103，根据影响结果，降低金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化金属-介质单元的光刻质量。
下面详细说明本实施例的光刻质量的优化方法的各步骤的示例流程。
本公开的实施例中，在基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项之前，该方法还包括：采用原子力显微镜测试金属膜层的上表面形貌；采用模板剥离、翻转技术测试金属膜层下表面形貌；根据上表面形貌及下表面形貌，得到金属膜层的表面粗糙度。
进一步地，根据获取的金属膜层的表面粗糙度，基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项。
具体地，确定由金属膜层表面粗糙度引入的波函数杂散项包括：根据特征矩阵法，得到金属-介质单元中单层膜的特征矩阵；根据单层膜的特征矩阵，得到金属-介质单元的单元特征矩阵；基于布洛赫定理及单元特征矩阵，确定由金属膜层粗糙度导致的膜层厚度引入变化项，进而得到由金属膜层表面粗糙度引入的波函数杂散项。
基于特征矩阵法，厚度为t n的单层膜的特征矩阵M n(k x，t n)满足以下关系：
Figure PCTCN2021127864-appb-000003
其中，k x表示倏逝波沿x轴的波矢，t n表示单层膜的层厚，k zn表示电磁波沿着z轴的波矢，k 0表示真空中的波矢，ε 0表示真空的介电常数，ε n 表示单层膜的介电常数。其中，上述公式中的单层膜的层厚指的是金属膜层厚或介质层厚。
倏逝波在金属-介质周期性排布的多层膜中符合边界连续性条件，即在金属和介质交界面上，倏逝波沿x轴的波矢k x具有不变性，即k x＝k xd＝k xm，k xd表示电磁波在介质层中沿x轴的波矢，k xm表示电磁波在金属膜层中沿x轴的波矢。
根据特征矩阵M n(k x，t n)，可以得到金属-介质单元的单元特征矩阵M unit(k x，t)，其满足以下关系：
Figure PCTCN2021127864-appb-000004
其中，M m和M d分别为金属层和介质层的特征矩阵，m 11、m 12、m 13、m 14分别为单元特征矩阵M unit(k x，t n)的各元素。t n＝t m＝t d，t m表示金属层的层厚，t d表示介质层的层厚，k zm表示电磁波在金属层中沿着z轴的波矢，k zd表示电磁波在介质层中沿着z轴的波矢，ε m为金属层的介电常数，ε d为介质层的的介电常数。
结合特征矩阵法和布洛赫定理，波函数ψ(z)在周期排列系统中：
ψ(z′)＝exp(-ik z(t m+t d))ψ(z)
其中，波函数ψ(z)表示x-z平面内横磁波归一化的波函数，其沿x轴和z轴的电场分别可表示为：
Figure PCTCN2021127864-appb-000005
Figure PCTCN2021127864-appb-000006
其中，k xn、k zn为横磁波沿着x轴和z轴的波矢；ω为角频率；经过一个金属-介质周期后的波函数为ψ(z′)。其中，z′＝z+t m+t d，z表示电磁波的坐 标，z′表示电磁波经过一个金属-介质单元的坐标。
确定金属膜层粗糙度导致膜层厚度t m引入的变化项Δt，从而得到由金属膜层表面粗糙度引入的波函数杂散项Δψ(z′)可以表示为：
Δψ(z′)＝exp(-ik z(t m+Δt+t d))ψ(z)
其中，k z表示倏逝波沿z轴的波矢，ψ(z)表示x-z平面内横磁波归一化的波函数，Δt表示由金属膜层粗糙度导致的膜层厚度t m引入变化项。
基于特征矩阵法与布洛赫定理，将表面的粗糙度RMS引入到金属膜层的厚度t m中，分析膜层厚度的纳米级起伏，导致的倏逝波波矢(k x，k z)在二维空间分布上的变化。(k x，k z)的实部导致电磁场相位上的变化，进而影响光刻成像的分辨力；(k x，k z)的虚部决定了电磁场的衰减，从而影响器件的尺寸，和光刻胶中的有效焦深。
根据本公开的实施例，将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，包括：将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属-介质单元的能量密度分布结果；根据能量密度分布结果，得到金属膜层粗糙度对光刻质量的影响分析曲线。
具体地，将步骤S101中得到的波函数杂散项输入至光刻质量偏差数学模型中，该模型即为金属-介质单元的仿真模型，采用有限元分析法进行仿真计算，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果，其可通过光刻成像对比度来衡量光刻质量。
根据光刻成像对比度，进一步优化金属膜层表面的粗糙度或金属-介质单元的成像结构，具体为：降低金属膜层表面的粗糙度，和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以使优化金属-介质单元的光刻质量，进而降低光刻胶图形的线边缘粗糙度(line edge roughness)。其中，金属-介质多层膜结构可以为Ag-SiO 2多层膜结构等。
本公开的实施例中，金属-介质单元由至少一层金属膜层构成，金属-介质单元中的介质层位于金属膜层之间，例如，金属-介质单元可以为 Ag-Pr构成的光刻胶-银形式的成像结构，或Ag-Pr-Ag构成的共振腔透镜结构等，其中，Pr层位于Ag层的表面上或多层Ag层之间。具体地，金属膜层可以由Ag、Al、Au中的一种或多种构成。
需说明的是，金属膜层与金属-介质多层膜结构并不仅限于上述实施例所示的类型，其可以根据实际应用情况进行设定，本公开的实施例对此不做限定。
下面将结合具体实施例对本公开提供的优化方法进行详细说明。应当理解，图2～图13中示出的金属-介质单元的结构及实验结果仅是示例性的，以帮助本领域的技术人员理解本公开的技术方案，并非用以限制本公开的保护范围。
实施例1
如图2所示，该金属-介质单元结构为基于光刻胶-银形式的成像结构，具体为：二氧化硅基底10、Ag层20、光刻胶层30、周期性铬条层40及掩模基底50，其中，掩模基底50为石英，Ag层20、光刻胶层30依次位于二氧化硅基底10上，周期性铬条层40与光刻胶层30之间为空气(air)。
如图2所示，理想条件下单色入射光源的波长为365nm。横磁波入射，因此磁场的振动方向向下垂直于横磁波入射方向。掩模基底石英Quartz的介电常数为2.25，掩模mask由掩模基底50与六个铬(Cr)条40构成，铬条之间由空气填充。
本实施例中，金属Cr的介电常数为-8.55-8.96i，Cr条的厚度为40nm，Cr的宽度即掩模的线宽为120nm。掩模与光刻胶之间，空气层的厚度为15nm。沿光束传播的z轴正方向，电磁波经过空气层之后达到光刻胶层。光刻胶层的厚度为30nm，光刻胶的介电常数为2.59。光刻胶下层Ag的厚度为50nm，介电常数为-2.4-0.24i。基底为二氧化硅SiO 2，对SiO 2的厚度无特殊要求，在本实施例中，基底SiO 2的厚度为20nm，介电常数为2.17。上述参数中，对光刻胶空间像的成像质量影响较大的为空气层的厚度。由于倏逝波的指数衰减特性，空气层的间距在十几纳米的尺度。同样，光刻胶下层银20主要起到对光刻胶中电磁场的反射增强作用， 因此下层银的厚度对于电场强度的影响较小，但下层银20的表面粗糙度对光强对比度具有重要影响。
基于有限元分析法，以及结合由金属膜层表面粗糙度引入的波函数杂散项进行数值仿真计算，得到二维平面内的坡印廷矢量分布，如图3所示。坡印廷矢量即电磁场在单位时间内的功率流分布，也称时均功率流，单位为W/m 2。基于坡印廷矢量，得到光刻胶中电磁场能量分布，即金属-介质单元的能量密度分布结果。
基于金属-介质单元的能量密度分布结果，可以依次得到基于光刻胶-银形式的成像结构的光刻胶中心归一化的光强分布图，如图4所示，以及基于光刻胶-银形式的成像结构中金属膜层粗糙度对光刻质量的影响分析曲线，如图5所示。
如图4所示，随着膜层粗糙度RMS从0.1nm增加至0.7nm，光强逐渐降低，膜层越光滑，光刻胶中心的光强越大。随着下层银Ag膜层粗糙度的增加，电磁波能量在光刻胶与Ag层交界处聚集，膜层粗糙度导致的交界处所分布的杂散波的比重越大。
如图5所示，膜层粗糙度RMS由0.1nm增加至0.4nm，光强对比度由0.989降低至0.972，对比度并没有较大幅度降低；膜层粗糙度RMS由0.4nm增加至0.7nm，光强对比度由0.972增长至0.986。对于光刻胶-银形式的成像结构(Pr-Ag结构)，膜层粗糙度在0.1nm至0.7nm的范围内，光强对比度均保持在大于0.97的范围内，光刻胶下层Ag的粗糙度对光刻胶中空间像的成像质量的影响较小。
实施例2
本实施例中的金属-介质单元的结构如图6所示，本实施例与实施例1的区别在于：
本实施例中，该金属-介质单元的结构为共振腔透镜，即银-光刻胶-银(Ag-Pr-Ag)结构，如图6所示。在光刻胶30上设置上层银20，上层银20的层厚为20nm，其他参数与实施例1保持一致。
同理，基于有限元分析法，以及结合由金属膜层表面粗糙度引入的波函数杂散项进行数值仿真计算，得到二维平面内的坡印廷矢量分布， 如图7所示。本实施例相对于实施例1，Ag-Pr-Ag形式的共振腔成像结构，对光刻胶中光强分布起到增强作用。
图8为共振腔成像结构的光刻胶中心归一化的光强分布示意图。如图8所示，对于共振腔成像结构，光刻胶中心的电场模有一定程度的下降，电场和光强分布出现一定程度的共振现象。光刻胶上下Ag膜层粗糙度RMS由0.1nm增加到0.7nm，对光刻胶中心的光强分布并无明显影响。
图9为共振腔成像结构的光刻胶中的光强对比度与Ag层面型粗糙度的曲线示意图。如图9所示，光刻胶上下层Ag的面型粗糙度在0.1nm到0.7nm的范围内变化，光刻胶中心空间像的光强对比度维持在0.98以上。因此，对于Ag-Pr-Ag的成像结构，膜层粗糙度在0.7nm的范围内，对光刻质量并无较大影响，但其总体的光强对比度相比与实施例1的Pr-Ag的成像结构高。
实施例3
本实施例中的金属-介质单元的结构如图10所示，本实施例与实施例1的区别在于：
本实施例中，该金属-介质单元的结构为基于Ag-SiO 2多层膜的光刻胶-银形式的成像结构，如图10所示。该Ag-SiO 2多层膜为交替设置的Ag层20及二氧化硅层10构成，具体为：在铬条40上依次设置二氧化钛平坦层60、Ag层20、二氧化硅层10、Ag层20、二氧化硅层10及Ag层20。
其中，二氧化钛的介电常数为7.8375-0.2800i。多层膜Ag的介电常数为-2.0525-0.73533i，SiO 2的介电常数为2.1898-0.008838i。其他参数与实施例1保持一致。
同理，基于有限元分析法，以及结合由金属膜层表面粗糙度引入的波函数杂散项进行数值仿真计算，得到二维平面内的坡印廷矢量分布，如图11所示。本实施例相对于实施例1，基于Ag-SiO 2多层膜的光刻胶-银形式的成像结构，由于多层膜对倏逝波的逐层耦合、叠加效应，导致传播过程中的电磁场能量较实施例1得到增强。
图12为共振腔成像结构的光刻胶中心归一化的光强分布示意图。如图12所示，对于Ag-SiO 2多层膜的光刻胶-银形式的成像结构，属Ag膜层粗糙度RMS由0.1nm增长至0.7nm，引入的倏逝波杂散项，经过膜层的逐层累积与耦合，到达光刻胶的部分，并没有导致光刻胶中心空间像光强分布的变化。膜层的积累与耦合效应，可以提高Pr-Ag这种成像结构对于膜层粗糙度的容忍度，降低了膜层粗糙度对光刻质量的影响。
图13为共振腔成像结构的光刻胶中的光强对比度与Ag层面型粗糙度的曲线示意图。如图13所示，膜层粗糙度由0.1nm增长至0.7nm，光刻胶中心空间像的光强对比度维持在大于0.992略低于0.993的水平，且光强对比度无变化。因此，对于Pr-Ag这种成像结构，金属膜层粗糙度对于光刻胶空间像，即光刻质量的影响，由于倏逝波在金属-介质单元周期性传输过程中的耦合与叠加作用，提高了对于金属膜层粗糙度的容忍度。
本公开的实施例，通过实施例1和实施例2可以明显看出，金属膜层表面粗糙度对光刻质量存在一定的影响，且Ag-Pr-Ag结构的光刻质量比Pr-Ag的光刻量较好，在光刻胶层的上表面引入金属Ag层，Ag-Pr-Ag形成反射共振腔，提高了光刻胶中的光强分布与与光刻对比度，由于在光刻胶的上下层引入重金属Ag，需采用适配性更好的金属离子清洗工艺，对光刻后的晶圆进行有效清洗与检测，已解决该种成像结构在光刻工艺中的重金属污染问题。另外，结合实施例3可以看出，对于实施例1的mask-air-Pr-Ag结构，在mask和air之间引入金属-介质多层膜，降低了膜层粗糙度对光刻质量的影响。
需说明的是，上述实施例中的金属-介质单元的结构、单层膜层厚、材料等仅为示例性的说明，其并不代表本公开的实施例不适用于其他结构的金属-介质单元结构。另外，本公开提供的优化方法并不仅限于用于金属膜层为Ag的金属-介质单元结构，在其他实际应用过程中，其可以为其他金属层与介质层的粗糙度的优化。
在实际应该的光刻过程中，可根据实际需求的金属-介质单元结构，基于本公开提供的优化方法进行分析，可对光刻过程中的光刻质量进行 优化，进而降低光刻胶图形的线边缘粗糙度(line edge roughness)
图14示意性示出了根据本公开实施例的光刻质量的优化装置的方框图。
如图14所示，该光刻质量的优化装置1400包括：波函数杂散项确定模块1410、仿真模块1420及光刻质量优化模块1430。该光刻质量的优化装置1400可以用于实现参考图1所描述的光刻质量的优化方法。
波函数杂散项确定模块1410，用于基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项。根据本公开的实施例，该波函数杂散项确定模块1410例如可以用于执行上文参考图1所描述的S101步骤，在此不再赘述。
仿真模块1420，用于将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征金属膜层粗糙度对光刻质量的影响结果。根据本公开的实施例，该仿真模块1420例如可以用于执行上文参考图1所描述的S102步骤，在此不再赘述。
光刻质量优化模块1430，用于根据影响结果，降低金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化金属-介质单元的光刻质量。根据本公开的实施例，该光刻质量优化模块1430例如可以用于执行上文参考图1所描述的S103步骤，在此不再赘述。
根据本公开的实施例的模块、子模块、单元、子单元中的任意多个、或其中任意多个的至少部分功能可以在一个模块中实现。根据本公开实施例的模块、子模块、单元、子单元中的任意一个或多个可以被拆分成多个模块来实现。根据本公开实施例的模块、子模块、单元、子单元中的任意一个或多个可以至少被部分地实现为硬件电路，例如现场可编程门阵列(FPGA)、可编程逻辑阵列(PLA)、片上系统、基板上的系统、封装上的系统、专用集成电路(ASIC)，或可以通过对电路进行集成或封装的任何其他的合理方式的硬件或固件来实现，或以软件、硬件以及固件三种实现方式中任意一种或以其中任意几种的适当组合来实现。或 者，根据本公开实施例的模块、子模块、单元、子单元中的一个或多个可以至少被部分地实现为计算机程序模块，当该计算机程序模块被运行时，可以执行相应的功能。
例如，波函数杂散项确定模块1410、仿真模块1420及光刻质量优化模块1430中的任意多个可以合并在一个模块中实现，或者其中的任意一个模块可以被拆分成多个模块。或者，这些模块中的一个或多个模块的至少部分功能可以与其他模块的至少部分功能相结合，并在一个模块中实现。根据本公开的实施例，波函数杂散项确定模块1410、仿真模块1420及光刻质量优化模块1430中的至少一个可以至少被部分地实现为硬件电路，例如现场可编程门阵列(FPGA)、可编程逻辑阵列(PLA)、片上系统、基板上的系统、封装上的系统、专用集成电路(ASIC)，或可以通过对电路进行集成或封装的任何其他的合理方式等硬件或固件来实现，或以软件、硬件以及固件三种实现方式中任意一种或以其中任意几种的适当组合来实现。或者，波函数杂散项确定模块1410、仿真模块1420及光刻质量优化模块1430中的至少一个可以至少被部分地实现为计算机程序模块，当该计算机程序模块被运行时，可以执行相应的功能。
图15示意性示出了根据本公开实施例的适于实现上文描述的方法的电子设备的方框图。图15示出的电子设备仅仅是一个示例，不应对本公开实施例的功能和使用范围带来任何限制。
如图15所示，本实施例中所描述的电子设备1500，包括：处理器1501，其可以根据存储在只读存储器(ROM)1502中的程序或者从存储部分1508加载到随机访问存储器(RAM)1503中的程序而执行各种适当的动作和处理。处理器1501例如可以包括通用微处理器(例如CPU)、指令集处理器和/或相关芯片组和/或专用微处理器(例如，专用集成电路(ASIC))，等等。处理器1501还可以包括用于缓存用途的板载存储器。处理器1501可以包括用于执行根据本公开实施例的方法流程的不同动作的单一处理单元或者是多个处理单元。
在RAM 1503中，存储有电子设备1500操作所需的各种程序和数 据。处理器1501、ROM 1502以及RAM 1503通过总线1504彼此相连。处理器1501通过执行ROM 1502和/或RAM 1503中的程序来执行根据本公开实施例的方法流程的各种操作。需要注意，所述程序也可以存储在除ROM 1502和RAM 1503以外的一个或多个存储器中。处理器1501也可以通过执行存储在所述一个或多个存储器中的程序来执行根据本公开实施例的方法流程的各种操作。
根据本公开的实施例，电子设备1500还可以包括输入/输出(I/O)接口1505，输入/输出(I/O)接口1505也连接至总线1504。电子设备1500还可以包括连接至I/O接口1505的以下部件中的一项或多项：包括键盘、鼠标等的输入部分1506；包括诸如阴极射线管(CRT)、液晶显示器(LCD)等以及扬声器等的输出部分1507；包括硬盘等的存储部分1508；以及包括诸如LAN卡、调制解调器等的网络接口卡的通信部分1509。通信部分1509经由诸如因特网的网络执行通信处理。驱动器1510也根据需要连接至I/O接口1505。可拆卸介质1511，诸如磁盘、光盘、磁光盘、半导体存储器等等，根据需要安装在驱动器1510上，以便于从其上读出的计算机程序根据需要被安装入存储部分1508。
根据本公开的实施例，根据本公开实施例的方法流程可以被实现为计算机软件程序。例如，本公开的实施例包括一种计算机程序产品，其包括承载在计算机可读存储介质上的计算机程序，该计算机程序包含用于执行流程图所示的方法的程序代码。在这样的实施例中，该计算机程序可以通过通信部分1509从网络上被下载和安装，和/或从可拆卸介质1511被安装。在该计算机程序被处理器1501执行时，执行本公开实施例的系统中限定的上述功能。根据本公开的实施例，上文描述的系统、设备、装置、模块、单元等可以通过计算机程序模块来实现。
本发明实施例还提供了一种计算机可读存储介质，该计算机可读存储介质可以是上述实施例中描述的设备/装置/系统中所包含的；也可以是单独存在，而未装配入该设备/装置/系统中。上述计算机可读存储介质承载有一个或者多个程序，当上述一个或者多个程序被执行时，实现根据本公开实施例的光刻质量的优化方法。
根据本公开的实施例，计算机可读存储介质可以是非易失性的计算机可读存储介质，例如可以包括但不限于：便携式计算机磁盘、硬盘、随机访问存储器(RAM)、只读存储器(ROM)、可擦式可编程只读存储器(EPROM或闪存)、便携式紧凑磁盘只读存储器(CD-ROM)、光存储器件、磁存储器件、或者上述的任意合适的组合。在本公开的实施例中，计算机可读存储介质可以是任何包含或存储程序的有形介质，该程序可以被指令执行系统、装置或者器件使用或者与其结合使用。例如，根据本公开的实施例，计算机可读存储介质可以包括上文描述的ROM 1502和/或RAM 1503和/或ROM 1502和RAM 1503以外的一个或多个存储器。
本公开的实施例还包括一种计算机程序产品，其包括计算机程序，该计算机程序包含用于执行流程图所示的方法的程序代码。当计算机程序产品在计算机系统中运行时，该程序代码用于使计算机系统实现本公开实施例所提供的光刻质量的优化方法。
在该计算机程序被处理器1501执行时执行本公开实施例的系统/装置中限定的上述功能。根据本公开的实施例，上文描述的系统、装置、模块、单元等可以通过计算机程序模块来实现。
在一种实施例中，该计算机程序可以依托于光存储器件、磁存储器件等有形存储介质。在另一种实施例中，该计算机程序也可以在网络介质上以信号的形式进行传输、分发，并通过通信部分1509被下载和安装，和/或从可拆卸介质1511被安装。该计算机程序包含的程序代码可以用任何适当的网络介质传输，包括但不限于：无线、有线等等，或者上述的任意合适的组合。
在这样的实施例中，该计算机程序可以通过通信部分1509从网络上被下载和安装，和/或从可拆卸介质1511被安装。在该计算机程序被处理器1501执行时，执行本公开实施例的系统中限定的上述功能。根据本公开的实施例，上文描述的系统、设备、装置、模块、单元等可以通过计算机程序模块来实现。
根据本公开的实施例，可以以一种或多种程序设计语言的任意组合来编写用于执行本公开实施例提供的计算机程序的程序代码，具体地， 可以利用高级过程和/或面向对象的编程语言、和/或汇编/机器语言来实施这些计算程序。程序设计语言包括但不限于诸如Java，C++，python，“C”语言或类似的程序设计语言。程序代码可以完全地在用户计算设备上执行、部分地在用户设备上执行、部分在远程计算设备上执行、或者完全在远程计算设备或服务器上执行。在涉及远程计算设备的情形中，远程计算设备可以通过任意种类的网络，包括局域网(LAN)或广域网(WAN)，连接到用户计算设备，或者，可以连接到外部计算设备(例如利用因特网服务提供商来通过因特网连接)。
需要说明的是，在本公开各个实施例中的各功能模块可以集成在一个处理模块中，也可以是各个模块单独物理存在，也可以两个或两个以上模块集成在一个模块中。上述集成的模块既可以采用硬件的形式实现，也可以采用软件功能模块的形式实现。所述集成的模块如果以软件功能模块的形式实现并作为独立的产品销售或使用时，可以存储在一个计算机可读取存储介质中。基于这样的理解，本发明的技术方案本质上或者说对现有技术做出贡献的部分或者该技术方案的全部或部分可以以软件产品的形式体现出来。
附图中的流程图和框图，图示了按照本公开各种实施例的系统、方法和计算机程序产品的可能实现的体系架构、功能和操作。在这点上，流程图或框图中的每个方框可以代表一个模块、程序段、或代码的一部分，上述模块、程序段、或代码的一部分包含一个或多个用于实现规定的逻辑功能的可执行指令。也应当注意，在有些作为替换的实现中，方框中所标注的功能也可以以不同于附图中所标注的顺序发生。例如，两个接连地表示的方框实际上可以基本并行地执行，它们有时也可以按相反的顺序执行，这依所涉及的功能而定。也要注意的是，框图或流程图中的每个方框、以及框图或流程图中的方框的组合，可以用执行规定的功能或操作的专用的基于硬件的系统来实现，或者可以用专用硬件与计算机指令的组合来实现。
本领域技术人员可以理解，本公开的各个实施例和/或权利要求中记载的特征可以进行多种组合和/或结合，即使这样的组合或结合没有明确 记载于本公开中。特别地，在不脱离本公开精神和教导的情况下，本公开的各个实施例和/或权利要求中记载的特征可以进行多种组合和/或结合。所有这些组合和/或结合均落入本公开的范围。
尽管已经参照本公开的特定示例性实施例示出并描述了本公开，但是本领域技术人员应该理解，在不背离所附权利要求及其等同物限定的本公开的精神和范围的情况下，可以对本公开进行形式和细节上的多种改变。因此，本公开的范围不应该限于上述实施例，而是应该不仅由所附权利要求来进行确定，还由所附权利要求的等同物来进行限定。

Claims (14)

  1. 一种光刻质量的优化方法，其特征在于，包括：
    基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项；
    将所述波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到所述金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征所述金属膜层粗糙度对光刻质量的影响结果；
    根据所述影响结果，降低所述金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化所述金属-介质单元的光刻质量。
  2. 根据权利要求1所述的光刻质量的优化方法，其特征在于，所述基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项，包括：
    根据所述特征矩阵法，得到所述金属-介质单元中单层膜的特征矩阵；
    根据所述单层膜的特征矩阵，得到所述金属-介质单元的单元特征矩阵；
    基于所述布洛赫定理及所述单元特征矩阵，确定由金属膜层粗糙度导致的膜层厚度引入变化项，进而得到由金属膜层表面粗糙度引入的波函数杂散项。
  3. 根据权利要求2所述的光刻质量的优化方法，其特征在于，所述单层膜的特征矩阵M n(k x，t n)满足以下关系：
    Figure PCTCN2021127864-appb-100001
    其中，k x表示倏逝波沿x轴的波矢，t n表示单层膜的层厚，k zn表示电磁波沿着z轴的波矢，k 0表示真空中的波矢，ε 0表示真空的介电常数，ε n 表示单层膜的介电常数。
  4. 根据权利要求3所述的光刻质量的优化方法，其特征在于，所述金属-介质单元的单元特征矩阵M unit(k x，t n)满足以下关系：
    Figure PCTCN2021127864-appb-100002
    其中，t n＝t m＝t d，t m表示金属层的层厚，t d表示介质层的层厚，k zm表示电磁波在金属层中沿着z轴的波矢，k zd表示电磁波在介质层中沿着z轴的波矢，ε m为金属层的介电常数。
  5. 根据权利要求4所述的光刻质量的优化方法，所述由金属膜层表面粗糙度引入的波函数杂散项Δψ(z′)满足以下关系：
    Δψ(z′)＝exp(-ik z(t m+Δt+t d))ψ(z)
    其中，k z表示倏逝波沿z轴的波矢，ψ(z)表示x-z平面内横磁波归一化的波函数，Δt表示由金属膜层粗糙度导致的膜层厚度t m引入变化项，z′＝z+t m+t d，z表示电磁波的坐标，z′表示电磁波经过一个金属-介质单元的坐标。
  6. 根据权利要求1所述的光刻质量的优化方法，其特征在于，所述将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属膜层粗糙度对光刻质量的影响分析曲线，包括：
    将波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到金属-介质单元的能量密度分布结果；
    根据所述能量密度分布结果，得到金属膜层粗糙度对光刻质量的影响分析曲线。
  7. 根据权利要求1所述的光刻质量的优化方法，其特征在于，在 所述确定由金属膜层表面粗糙度引入的波函数杂散项的步骤之前，该方法还包括：
    采用原子力显微镜测试所述金属膜层的上表面形貌；
    采用模板剥离、翻转技术测试所述金属膜层下表面形貌；
    根据所述上表面形貌及所述下表面形貌，得到所述金属膜层的表面粗糙度。
  8. 根据权利要求1所述的光刻质量的优化方法，其特征在于，所述金属-介质单元由至少一层金属膜层构成，所述金属-介质单元中的介质层位于所述金属膜层之间。
  9. 根据权利要求8所述的光刻质量的优化方法，其特征在于，所述至少一层金属膜层由Ag、Al、Au中的一种或多种材料构成。
  10. 根据权利要求1所述的光刻质量的优化方法，其特征在于，所述金属-介质多层膜结构为Ag-SiO 2多层膜结构。
  11. 一种光刻质量的优化装置，其特征在于，包括：
    波函数杂散项确定模块，用于基于特征矩阵法与布洛赫定理，确定由金属膜层表面粗糙度引入的波函数杂散项；
    仿真模块，用于将所述波函数杂散项输入至光刻质量偏差数学模型中进行计算仿真，得到所述金属膜层粗糙度对光刻质量的影响分析曲线，该影响分析曲线表征所述金属膜层粗糙度对光刻质量的影响结果；
    光刻质量优化模块，用于根据所述影响结果，降低所述金属膜层表面的粗糙度和/或在位于金属-介质单元上方的掩膜版和空气之间设置金属-介质多层膜结构，以优化所述金属-介质单元的光刻质量。
  12. 一种电子设备，包括：存储器，处理器及存储在存储器上并可在处理器上运行的计算机程序，其特征在于，所述处理器执行所述计算 机程序时，实现如权利要求1至10中任一项所述的光刻质量的优化方法。
  13. 一种计算机可读存储介质，其上存储有计算机程序，其特征在于，所述计算机程序被处理器执行时，实现如权利要求1至10中任一项所述的光刻质量的优化方法。
  14. 一种计算机程序产品，包括计算机程序，所述计算机程序被处理器执行时实现如权利要求1至10中任一项所述的光刻质量的优化方法。
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